JP2011210973A - Semiconductor device manufacturing apparatus and method of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing apparatus capable of improving reliability and yield of a semiconductor device by suppressing adhesion and the like of fragments and the like which may be produced at dicing, and a method of manufacturing a semiconductor device.SOLUTION: The semiconductor device manufacturing apparatus manufactures a semiconductor device by dicing a semiconductor wafer in which a plurality of semiconductor device elements are formed, wherein boundary regions of the device elements are modified or worked. The manufacturing apparatus includes a freely rotatable rotating table and a plurality of pedestals loaded on the rotating table and movable in the radial direction. A semiconductor wafer is fixed on one of the surfaces of a stretchable sheet member whose size is larger than the semiconductor wafer when planely viewed, and the sheet member is fixed to the plurality of pedestals. By rotating the rotating table to move the plurality of pedestals outward in the radial direction by the centrifugal force, the sheet member is extended in the radial direction, and thereby the semiconductor wafer fixed on the sheet member is diced into individual device elements.

Description

  The present invention relates to a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method.

  Conventionally, various methods have been used as a method of dividing (dividing into chips) after forming semiconductor elements on a wafer.

  For example, there has been a dicing method in which a boundary region between a plurality of semiconductor elements formed on a wafer is divided with a dicing blade (see, for example, Patent Document 1).

  In addition, a laser dicing method in which a boundary layer of a plurality of semiconductor elements formed on a wafer is irradiated with a laser to form a modified layer for cutting, and the wafer bonded to a stretchable dicing tape is split by applying stress. was there. Stress is applied to the wafer by a method that applies a force to stretch the dicing tape radially and stretches it to the boundary region, or a method that applies a bending force by pressing a wide squeegee on the elastic tape to which the wafer is bonded. (For example, see Patent Documents 2 and 3).

JP 2006-203023 A JP 2004-111601 A JP 2006-066539 A

  The laser dicing method does not use grinding water or cleaning water, so it can shorten the tact time and simplify the manufacturing equipment, and is particularly effective when it is desired to avoid the entry of moisture into the chip. is there.

  However, in the conventional method of manufacturing a semiconductor device by the laser dicing method, there is a case where fragments are generated between chips when a chip is divided by radially stretching a stretchable tape carrying a wafer. . There was a possibility that the yield rate would be reduced by generating fragments and adhering to or mixing into the chip (semiconductor device).

  In addition, when a wide squeegee is scanned along the stretchable tape to apply stress locally to the wafer, the chips (semiconductor devices) around the area where the squeegee is in contact with each other interfere with each other, resulting from fragmentation. There was a possibility that the probability of generating debris would increase.

  Further, since scanning is performed while bringing the squeegee into contact with the elastic tape, static electricity is generated, and there is a possibility that the separated chip (semiconductor device) is charged (charged). When the chip (semiconductor device) is charged, there is a problem that debris and foreign matters are likely to adhere.

  In addition, a problem caused by generation of fragments has occurred even in a method of dividing into pieces with a dicing blade instead of laser dicing.

  It has been desired to reduce the above-described adhesion of adhering fragments, contamination, adhesion of foreign matters due to electrification, and the like, leading to a decrease in reliability of the semiconductor device or a decrease in yield rate.

  In view of the above, an object of the present invention is to provide a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method capable of suppressing the adhesion of fragments and the like that may occur at the time of division and improving the reliability and yield rate of the semiconductor device.

  A semiconductor device manufacturing apparatus according to an embodiment of the present invention is a semiconductor device that manufactures a semiconductor device by dividing a semiconductor wafer in which a plurality of elements are formed and a boundary region of the plurality of elements is modified or processed into pieces. A manufacturing apparatus, comprising: a rotatable turntable; and a plurality of pedestals mounted on the turntable and movable in a radial direction, wherein the semiconductor wafer is fixed to one surface, and more than the semiconductor wafer. A sheet member having a large elasticity in a plan view is fixed to the plurality of pedestals, and the rotating base is rotated to move the plurality of pedestals radially outward by centrifugal force. The semiconductor wafer fixed to the sheet member is separated into pieces.

  Further, the turntable has a plurality of guide portions extending radially outward, and each of the plurality of pedestals is slidably engaged with each of the plurality of guide portions. Also good.

  Further, the radially inner ends of the plurality of guide portions may all be equidistant from the rotation center of the turntable.

  Further, the radially outer ends of the plurality of guide portions may all be equidistant from the rotation center of the turntable.

  Moreover, the said turntable may have an engaging part for fixing the said base in the said predetermined position, when the said base moves to the predetermined position of the radial direction outer side.

  The turntable may have a release mechanism for releasing the engagement state of the engagement portion.

  A manufacturing method of a semiconductor device according to an embodiment of the present invention is a manufacturing method of a semiconductor device by manufacturing a semiconductor device by dividing a semiconductor wafer on which a plurality of elements are formed, and the plurality of elements of the semiconductor wafer A step of modifying or processing the boundary region of the semiconductor wafer, a step of fixing the semiconductor wafer to one surface of a sheet member that is larger than the semiconductor wafer in plan view and has elasticity, and rotating the sheet member to perform centrifugation. Separating the semiconductor wafer fixed to the sheet member by stretching in the radial direction with force.

  The method further includes a step of fixing the sheet member to a plurality of pedestals mounted on a turntable and movable in a radial direction by centrifugal force due to rotation of the turntable, and rotating the turntable to rotate the plurality of pedestals. The semiconductor wafer fixed to the sheet member may be singulated by extending the sheet member in the radial direction by moving it radially outward.

  It is possible to provide a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method capable of suppressing the adhesion of fragments and the like that may occur at the time of division and improving the reliability and yield rate of the semiconductor device.

1 is a diagram illustrating a semiconductor device manufacturing apparatus according to a first embodiment; FIG. 3 is an enlarged view showing a main part of the semiconductor device manufacturing apparatus of the first embodiment. 6 is a diagram showing an operation state of the semiconductor device manufacturing apparatus 100 according to the first embodiment. FIG. FIG. 6 is a diagram for explaining a part of the manufacturing process performed by the semiconductor device manufacturing apparatus of the first embodiment; 6 is a diagram for explaining dicing processing by the semiconductor device manufacturing apparatus 100 according to the first embodiment; FIG. FIG. 10 is a diagram illustrating a semiconductor device manufacturing apparatus according to a second embodiment; FIG. 10 is a diagram for explaining a dicing process by the semiconductor device manufacturing apparatus 200 according to the second embodiment.

  DESCRIPTION OF EMBODIMENTS Embodiments to which a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method of the present invention are applied will be described below.

<Embodiment 1>
1A and 1B are diagrams illustrating a semiconductor device manufacturing apparatus according to a first embodiment, in which FIG. 1A is a plan view, FIG. 1B is a cross-sectional view taken along line AA ′ in FIG. It is a figure which expands and shows the BB 'arrow cross section of).

  Here, the semiconductor device manufacturing method of the first embodiment will be described through the operation of the semiconductor device manufacturing apparatus 100 of the first embodiment.

  As shown in FIGS. 1A and 1B, the semiconductor device manufacturing apparatus 100 of the first embodiment includes a base 10 and a turntable 20, and the turntable 20 is disposed in the base 10. It is pivotally supported on the rotating shaft 12 of the motor 11.

  The base 10 is a disk-shaped housing, and has a built-in motor 11, and a rotating shaft 12 of the motor 11 projects from the upper surface 10A. The base 10 may be made of iron or stainless steel, for example.

  The motor 11 may be a servo motor, for example, and is used for rotating the turntable 20 supported by the rotating shaft 12 at a predetermined number of rotations. Electric power is supplied to the motor 11 from the outside of the base 10.

  The turntable 20 is a member used to divide a semiconductor device (chip), which will be described later, and is detachably supported on the rotary shaft 12. For this reason, if it removes from the rotating shaft 12 after dividing into pieces, it can also be utilized for conveyance of a semiconductor device. The turntable 20 may be made of stainless steel, for example.

  As shown in FIG. 1A, the turntable 20 has eight arm portions 21A to 21H extending radially from the rotation center 20C. The arm portions 21A to 21H are arranged at equiangular intervals. Since FIG. 1A shows eight arm portions 21A to 21A, the space between each of the arm portions 21A to 21H is 45 degrees. Hereinafter, the eight arm portions 21A to 21H are referred to as the arm portions 21 when they are not distinguished.

  In the arm portions 21A to 21H, groove portions 22A to 22H as guide portions are formed along the longitudinal direction, respectively. The longitudinal directions of the arm portions 21 </ b> A to 21 </ b> H and the groove portions 22 </ b> A to 22 </ b> H coincide with the radial direction of the turntable 20. The groove portions 22A to 22H are provided to guide the pedestals 23A to 23H radially outward by centrifugal force when the turntable 20 rotates.

  In the following description, the eight groove portions 22A to 22H are referred to as the groove portion 22 when not distinguished from each other, and the eight pedestals 23A to 23H are referred to as the pedestal 23 when not distinguished from each other.

  The groove portions 22A to 22H all have the same length, width, and depth. The distances from the radially inner ends of the grooves 22A to 22H to the rotation center 20C of the turntable 20 are all set to be the same, and similarly, the radially outer ends of the grooves 22A to 22H. The distance from the rotation center 20C to the rotation center 20C is all set to be the same. This is because when the turntable 20 rotates, the positions of the pedestals 23A to 23H are equidistant from the center of rotation, thereby improving the rotation balance.

  Further, as shown in FIG. 1C, the groove portion 22 has an inverted T-shaped cross section in the longitudinal direction, and the pedestal 23 has an inverted T-shaped protrusion 231 corresponding to the inverted T-shape of the groove portion 22. Have. The protruding portion 231 of the pedestal 23 is engaged with the groove portion 22, and the pedestal 23 is slidable in the longitudinal direction of the groove portion 22.

  The arm portions 21A to 21H have engaging portions 24A to 24H on the outer side in the radial direction from the groove portions 22A to 22H, respectively. The configuration of the engaging portions 24A to 24H will be described later. Hereinafter, when the engaging portions 24A to 24H are not distinguished, they are referred to as engaging portions 24.

  2 is an enlarged view showing a main part of the semiconductor device manufacturing apparatus according to the first embodiment, in which (A) is a side view of the pedestal 23, (B) is a rear view of the pedestal 23, and (C), FIG. FIG. 4D is a view showing a cross section of the radially outer portion of the arm portion 21.

  As shown in FIG. 2A, the pedestal 23 has a recess 232 on the side where the protrusion 231 is not formed. The pedestal 23 is engaged with the groove portion 22 so that the concave portion 232 is located on the outer side in the radial direction. The recessed portion 232 is recessed in a cylindrical shape, and is used when the pedestal 23 is fixed to the end portion on the radially outer side of the groove portion 22. 2B shows a state in which the pedestal 23 is viewed from the left side in the side view of FIG.

  Here, the base 23 may be made of stainless steel, for example.

  As shown in FIG. 2C, the engaging portion 24 has a movable portion 241, a spring 242, and an electromagnet 243, which are in a hole portion 244 formed on the upper surface side of the arm 21. It is arranged.

  The movable portion 241 is made of a ferromagnetic material (typically, iron), and when the electromagnet 243 is excited, the movable portion 241 is magnetically attracted and is stored in the storage position indicated by the solid line. In the storage position, the upper surface of the engaging portion is on the same surface as the upper surface of the arm 21 or slightly lower than the upper surface of the arm 21. Further, when the movable part 241 is in the storage position, the spring 242 is in a contracted state with respect to the natural length.

  When the electromagnet 243 is demagnetized, the length of the spring 242 is extended by the restoring force, so that the movable portion 241 protrudes to the protruding position shown in FIG. At the protruding position, the movable portion 241 is in a state where the upper half protrudes from the upper surface of the arm portion 21 while the lower half remains in the hole portion 244.

  There are actually eight engaging portions 24 because they are arranged in each of the arm portions 21A to 21H (see FIG. 1A).

  In addition, since each engaging part 24 is mounted in the turntable 20, the electric power supply to the electromagnet 243 is a rotating body like a rotary connector in the vicinity of the rotating shaft 12 (refer FIG. 1 (B)), for example. It is sufficient to use a component that supplies power.

  Further, regarding the switching control of excitation / demagnetization of each electromagnet 243 and the rotation drive control of the motor 11 (see FIG. 1B) when moving the movable portion 241 between the storage position and the protruding position, the electromagnet An operation unit that can turn on / off 243 and turn on / off the motor 11 may be provided so that switching between excitation / demagnetization of the electromagnet 243 and switching between rotation / stop of the motor 11 may be performed.

  3A and 3B are diagrams showing an operation state of the semiconductor device manufacturing apparatus 100 according to the first embodiment. FIG. 3A is a plan view, and FIG. 3B is an enlarged view showing an operation state of the engaging portion 24. .

  The semiconductor device manufacturing apparatus 100 according to the first embodiment has the motor 11 (see FIG. 1B) in a state where current is passed through the electromagnet 243 and the movable portion 241 is retracted to the storage position (see FIG. 2C). ) Is rotated at a predetermined number of rotations, the rotating plate 20 is rotated, and the pedestals 23A to 23H are moved radially outward of the rotating plate 20 along the groove portions 22A to 22H by centrifugal force (see FIG. 3A). ).

  When the electromagnet 243 is demagnetized when the pedestals 23A to 23H move to the radially outer ends of the groove portions 22A to 22H, the movable portion 241 protrudes as shown in FIG. It is inserted into the recess 232. At this time, since the lower half of the movable portion 241 remains in the hole portion 244, the base 23 can be fixed to the radially outer end of the groove portion 22 by moving the movable portion 241 to the protruding position. . In addition, the utilization method of fixing the base 23 to the edge part of the radial direction outer side of the groove part 22 is mentioned later.

  4A and 4B are diagrams for explaining a part of a manufacturing process performed by the semiconductor device manufacturing apparatus according to the first embodiment. FIG. 4A is a process of bonding a wafer to a porous sheet, and FIG. The process of performing laser processing is shown.

  As shown in FIG. 4A, the wafer 50 is bonded to the dicing tape 60. The wafer 50 is, for example, a silicon wafer, on which a plurality of elements are formed. These plural elements are, for example, MEMS (Micro Electro Mechanical Systems) elements, and each of them becomes a semiconductor device by being divided (divided into pieces). For this reason, each element is referred to as a semiconductor device 51 here. The MEMS element is a minute electronic component having a vibrator manufactured by a semiconductor manufacturing process, and can detect a displacement of a physical quantity such as a capacitance due to the displacement of the vibrator. Since such a MEMS element is used, for example, in a yaw rate sensor of a vehicle, it is desirable that the processing at the time of separation (dividing into pieces) avoids moisture.

  The dicing tape 60 is a stretchable sheet that is larger than the wafer 50 in a plan view, and an adhesive for bonding the wafer 50 is applied to the surface. In addition, what is necessary is just to use what is ultraviolet-cured as this adhesive agent, for example.

  As shown in FIG. 4A, the wafer 50 on which the plurality of semiconductor devices 51 are formed is bonded to the dicing tape 60. The wafer 50 may be mounted on the dicing tape 60 using a known device such as a wafer mounter.

  Next, as shown in FIG. 4B, the laser device 70 is used to irradiate the wafer 50 with the laser 71 and the boundary region 52 between the semiconductor devices 51 of the wafer 50 bonded to the dicing tape 60. Laser processing is performed.

  As the laser device 70, for example, a YAG laser device can be used. By adjusting the laser output and pulse width of the laser 71 output from the YAG laser device 70, for example, a modified layer of about 30 to 50 nm can be formed in the boundary region 52 of the wafer 50.

  By this laser processing, the silicon single crystal in the boundary region 52 is modified to have a low mechanical strength such as polycrystalline or amorphous.

  FIGS. 5A and 5B are diagrams for explaining dicing processing by the semiconductor device manufacturing apparatus 100 according to the first embodiment. FIGS. 5A and 5A are a cross-sectional view and a plan view showing a state before dicing. B1) and (B2) are a cross-sectional view and a plan view showing a state where dicing is finished, and (C1) and (C2) are a cross-sectional view and a plan view showing a state for carrying a chip after dicing is finished.

  5A2 is a cross-sectional view taken along the line AA ′ of FIG. 5A1, FIG. 5B is a cross-sectional view taken along the line AA ′ of FIG. 5B, and FIG. It is A 'arrow sectional drawing.

  The dicing process by the semiconductor device manufacturing apparatus 100 according to the first embodiment starts from a state in which the dicing tape 60 to which the wafer 50 is bonded is mounted on the pedestals 23A to 23H as shown in FIGS. 5A1 and 5A2. . When the dicing tape 60 is mounted on the pedestals 23A to 23H, the lower surface of the dicing tape 60 is placed on the pedestal with the center of the wafer 50 and the rotation center 20C (see FIG. 1A) of the turntable 20 aligned. What is necessary is just to adhere | attach to 23A-23H. Here, as the dicing tape 60, for example, the back surface (bottom surface) of which a base material 23A to 23H is in contact with the adhesive may be used.

  Next, the motor 11 is driven and the turntable 20 is rotated at a predetermined number of rotations. When the turntable 20 rotates, the pedestals 23A to 23H gradually move outward in the radial direction of the turntable 20 along the groove portions 22A to 22H by centrifugal force.

  As the pedestals 23A to 23H move radially outward, the dicing tape 60 is radially extended in a plan view. Therefore, the wafer 50 bonded on the dicing tape 60 also has a stress that extends radially in a plan view. Take it.

  As described above, since the boundary region 52 between the plurality of semiconductor devices 51 is modified by the laser processing to reduce the mechanical strength, the wafer 50 is radially formed by the dicing tape 60 that is to be stretched radially. As a result, the wafer 50 is divided into a plurality of semiconductor devices 51 as shown in FIGS. 5B1 and 5B2.

  At this time, since the direction in which the wafer 50 is stretched (radial direction) in order to divide into pieces matches the direction of the load applied to the wafer 50 (radial direction), excessive force on the wafer 50 is reduced. Thus, the generation of fragments can be suppressed.

  The predetermined number of rotations when rotating the turntable 20 may be determined according to the strength of the boundary region 52 of the wafer 50, the degree of expansion / contraction of the dicing tape 60, the mass of the pedestals 23A to 23H, and the like.

  When the separation process is completed, the motor 11 is driven and the rotating table 20 is rotated, the electromagnet 243 of the engaging portion 24 is demagnetized, and the movable portion 241 protrudes as shown in FIG. 5 (C1). . As a result, the movable portion 241 is inserted into the recess 232. In addition, since the movable part 241 is arrange | positioned 1 each in each of the arm parts 21A-21H, it will be inserted in the recessed part 232 formed in each back surface of the bases 23A-23H.

  As a result, the pedestals 23A to 23H are fixed to the radially outer ends of the groove portions 22A to 22H.

  Next, when the motor 11 is stopped in a state where the movable portion 241 is protruded and the upper half is inserted into the recess 232 and the pedestals 23A to 23H are fixed to the radially outer ends of the groove portions 22A to 22H, The turntable 20 is stopped.

  At this time, if the pedestals 23A to 23H are not fixed, the centrifugal force applied to the pedestals 23A to 23H decreases as the rotational speed of the turntable 20 decreases, so that the stretched dicing tape 60 contracts or deforms. For example, the pedestals 23A to 23H may be pulled back in the direction of the rotation center 20C along the groove portions 22A to 22H. If the pedestals 23A to 23H are pulled back in the direction of the rotation center 20C, a plurality of semiconductor devices 51 that have been separated into pieces come into contact with each other or overlap each other, resulting in fragments or damage to the semiconductor device 51. There is a possibility of receiving.

  However, according to the semiconductor device manufacturing apparatus 100 of the first embodiment, the bases 23A to 23H are fixed to the radially outer ends of the groove portions 22A to 22H before the rotational speed of the turntable 20 is decreased. Even if the base 20 stops, the bases 23A to 23H are not pulled back in the direction of the rotation center 20C along the groove portions 22A to 22H.

  For this reason, even if the turntable 20 is stopped, the dicing tape 60 can be held in a radially expanded state in a plan view, whereby the plurality of semiconductor devices 51 can be held at the time when the singulation is completed.

  Even if the turntable 20 is removed from the rotary shaft 12 in this state, the pedestals 23A to 23H are fixed at the radially outer ends, so that they can be transported for the next processing step.

  As described above, according to the method of manufacturing the semiconductor device of the first embodiment, the direction in which the wafer 50 is stretched (radial direction) and the direction of the load applied to the wafer 50 (radial direction) coincide with each other. Therefore, an excessive force on the wafer 50 is reduced, and singulation can be performed while suppressing generation of fragments.

  In addition, since the dicing tape 60 can be held in a radially expanded state in a plan view after the singulation is completed, contact between the semiconductor devices 51 can be suppressed, and generation of fragments can be suppressed.

  In addition, since the semiconductor device manufacturing apparatus 100 according to the first embodiment divides the wafer 50 into pieces, even if the pieces are generated, the pieces are separated from the wafer 50 by the centrifugal force generated by the rotation. Can also fly away.

  For this reason, even if fragments are generated as compared with the conventional case where the wafers 50 are separated without rotating, the probability that the fragments are attached to or mixed in the semiconductor device 51 is greatly reduced. be able to.

  Further, during dicing, the semiconductor device 51 may be charged if it is scanned with a squeegee as in the prior art, but the semiconductor device manufacturing apparatus 100 of the first embodiment includes an operation that generates static electricity. Therefore, the adhesion of foreign matter due to charging can be suppressed.

  As described above, according to the first embodiment, there is provided a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method capable of suppressing the adhesion of fragments and the like that may occur at the time of cutting and improving the yield rate of the semiconductor device 51. can do.

  In the above description, the boundary region 52 of the semiconductor device 51 of the wafer 50 is modified by laser irradiation. However, the process for reducing the strength of the boundary region 52 is not limited to modification by laser irradiation. Alternatively, for example, processing by mechanical processing or the like may be used. For example, a process of forming a groove by cutting a predetermined depth from the surface of the boundary region 52 using a dicing blade to reduce the strength of the boundary region 52 may be used.

  As described above, even when the boundary region 52 is modified by mechanical processing, if the wafer 50 and the dicing tape 60 are rotated and separated into pieces as described above, even if there is a piece, the piece is broken. Can be blown away from the wafer 50 by centrifugal force, so that the adhesion or mixing of debris to the semiconductor device 51 can be suppressed and the yield rate can be improved.

  Moreover, although the rotary table 20 demonstrated the form which has the eight arm parts 21A-21H above, the number of the arm parts 21 is not restricted to eight, The number should be selected according to a usage form etc. That's fine.

  Moreover, although the arm part 21 has the cross-sectional inverted T-shaped groove part 22 and the form which the base 23 has the cross-sectional inverted T-shaped projection part 231 engaged with the groove part 22 was demonstrated, these shapes are an example. However, if the pedestal 23 mounted on the turntable 20 is configured to be movable radially outward by the centrifugal force generated by the rotation of the turntable 20, the configuration in which the pedestal 23 slides with respect to the turntable 20 is as follows. Anything is acceptable.

  Moreover, although the engaging part 24 demonstrated the form which has the movable part 241, the spring 242, and the electromagnet 243 above, the engaging part 24 can fix the bases 23A-23H to the predetermined position in radial direction. If there is, it is not restricted to the movable part 241, the spring 242, and the electromagnet 243. For example, the movable portion 241 may be projected using an electric actuator.

  In the above description, the element formed on the wafer 50 is a MEMS element. However, the element formed on the wafer 50 is not limited to a MEMS element. For example, an LSI (Large Scale Integration) is used. Or any other storage element such as a memory.

<Embodiment 2>
The semiconductor device manufacturing apparatus of the second embodiment is different from the semiconductor device manufacturing apparatus 100 of the first embodiment in the shape of the pedestal. Since other configurations are the same as those of the semiconductor device manufacturing apparatus 100 of the first embodiment, the same components are denoted by the same reference numerals, and description thereof is omitted.

  The semiconductor device manufacturing method of the second embodiment is the same as the semiconductor device manufacturing method of the first embodiment.

  6A and 6B are diagrams showing a semiconductor device manufacturing apparatus according to the second embodiment. FIG. 6A is a plan view showing a state before rotation, and FIG. 6B is a plan view showing a state after rotation.

  As shown in FIG. 6A, the semiconductor device manufacturing apparatus 200 of the second embodiment includes fan-shaped bases 223A to 223H in plan view. The bases 223A to 223H differ only in the shape of the upper part, and the other configurations are the same as those of the base 23 of the semiconductor device manufacturing apparatus 100 of the first embodiment.

  For this reason, the bases 223A to 223H of the semiconductor device manufacturing apparatus 200 according to the second embodiment each have the protrusions 231 and the recesses 232 (see FIG. 2) on the lower side, and the grooves 22A to 22H of the turntable 20 respectively. It is possible to move radially outward along.

  FIG. 6B shows a state where the bases 223A to 223H of the semiconductor device manufacturing apparatus 200 of the second embodiment have moved to the outer ends in the radial direction along the groove portions 22A to 22H (see FIG. 1A). It is a top view.

  As shown in FIG. 6 (B), the bases 223A to 223H are arranged on the same circle C when the outer peripheral portion moves to the outer end in the radial direction along the groove portions 22A to 22H (see FIG. 1 (A)). It is comprised so that it may be located in. This is to apply the stress to the dicing tape 60 more evenly and to make it difficult for the semiconductor devices 51 to come into contact with each other after the division. In addition, after the singulation processing is completed, when carrying out the next processing or the like, it can be attached to a jig or the like more stably.

  FIGS. 7A and 7B are diagrams for explaining dicing processing by the semiconductor device manufacturing apparatus 200 according to the second embodiment. FIGS. 7A and 7A are a cross-sectional view and a plan view showing a state before dicing. B1) and (B2) are a cross-sectional view and a plan view showing a state where dicing is finished, and (C1) and (C2) are a cross-sectional view and a plan view showing a state for carrying a chip after dicing is finished.

  7A2 is a cross-sectional view taken along the line AA ′ of FIG. 7A, FIG. 7B is a cross-sectional view taken along the line AA ′ of FIG. 7B, and FIG. It is A 'arrow sectional drawing.

  The dicing process by the semiconductor device manufacturing apparatus 200 according to the second embodiment starts from a state in which the dicing tape 60 to which the wafer 50 is bonded is mounted on the bases 223A to 223H as shown in FIGS. 7A1 and 7A2. . When the dicing tape 60 is mounted on the pedestals 223A to 223H, the lower surface of the dicing tape 60 may be bonded to the pedestals 223A to 223H with the center of the wafer 50 and the rotation center 20C of the turntable 20 aligned. .

  Next, when the motor 11 is driven and the turntable 20 is rotated at a predetermined number of rotations, the pedestals 223A to 223H gradually move outward in the radial direction of the turntable 20 along the grooves 22A to 22H by centrifugal force. Moving.

  As the bases 223A to 223H move outward in the radial direction, the dicing tape 60 is radially extended in a plan view, and the wafer 50 has a plurality of semiconductor devices 51 as shown in FIGS. 7B1 and 7B2. It is divided into pieces.

  At this time, since the direction in which the wafer 50 is stretched (radial direction) in order to divide into pieces matches the direction of the load applied to the wafer 50 (radial direction), excessive force on the wafer 50 is reduced. Thus, the generation of fragments can be suppressed.

  When the separation process is completed, the motor 11 is driven and the rotating table 20 is rotated, the electromagnet 243 of the engaging portion 24 is demagnetized, and the movable portion 241 protrudes as shown in FIG. 7 (C1). Thus, the bases 223A to 223H are fixed to the radially outer ends of the groove portions 22A to 22H.

  Finally, the turntable 20 is stopped by stopping the motor 11.

  In this state, as shown in FIG. 7 (C2), since the outer peripheral portions of the bases 223A to 223H are located on the same circle C, the dicing tape 60 is subjected to stress more evenly and divided. Later, it becomes difficult for the semiconductor devices 51 to come into contact with each other. In addition, when the turntable 20 is detached from the rotary shaft 12 and transported for the next processing step, it can be more stably attached to a jig or the like.

  Further, since the outer peripheral portions of the pedestals 223A to 223H are located on the same circle C, the dicing tape 60 can be in close contact with the pedestals 223A to 223H during rotation, thereby suppressing the floating of the dicing tape 60 in the air. In particular, the dicing tape 60 can be stretched. In addition, what is necessary is just to perform adhesion | attachment with the dicing tape 60 and each of the bases 223A-223H so that the uniform expansion | extension of the dicing tape 60 may not be prevented. For example, the dicing tape 60 and each of the bases 223A to 223H are bonded to each other at the outermost position (or the periphery thereof) of the dicing tape 60 on a radial straight line passing through the center of the fan-shaped central angle of the bases 223A to 223H. do it.

  As described above, according to the second embodiment, there is provided a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method capable of suppressing the adhesion of fragments and the like that may occur at the time of cutting and improving the yield rate of the semiconductor device 51. can do.

  Further, since the bases 223A to 223H are configured so that the outer peripheral portions are located on the same circle C, when being transported for the next processing step, the mounting to the jig or the like is more stable. It can be carried out.

  The semiconductor device manufacturing apparatus and the semiconductor device manufacturing method according to the exemplary embodiments of the present invention have been described above. However, the present invention is not limited to the specifically disclosed embodiments. Various modifications and changes can be made without departing from the scope of the claims.

DESCRIPTION OF SYMBOLS 10 Base 10A Upper surface 11 Motor 12 Rotating shaft 20 Rotating table 20C Center of rotation 21, 21A-21H Arm part 22, 22A-22H Groove part 23, 23A-23H, 223, 223A-223H Base 231 Protrusion part 232 Recessed part 24 241 Movable part 242 Spring 243 Electromagnet 50 Wafer 51 Semiconductor device 52 Boundary region 60 Dicing tape 70 Laser device 100, 200 Semiconductor device manufacturing apparatus

Claims (8)

A semiconductor device manufacturing apparatus for manufacturing a semiconductor device by dividing a semiconductor wafer in which a plurality of elements are formed and a boundary region of the plurality of elements is modified or processed,
A rotatable turntable,
A plurality of pedestals mounted on the turntable and movable in a radial direction;
The semiconductor wafer is fixed to one surface, and a sheet member that is larger in plan view than the semiconductor wafer and has elasticity is fixed to the plurality of pedestals, and the rotating table is rotated so that the plurality of pedestals are subjected to centrifugal force. The semiconductor device manufacturing apparatus is configured to separate the semiconductor wafer fixed to the sheet member by extending the sheet member in a radial direction by moving the sheet member outward in the radial direction.   The rotary table has a plurality of guide portions extending radially outward, and each of the plurality of pedestals is slidably engaged with each of the plurality of guide portions. Item 2. A semiconductor device manufacturing apparatus according to Item 1.   3. The semiconductor device manufacturing apparatus according to claim 2, wherein the radially inner ends of the plurality of guide portions are all equidistant from the rotation center of the turntable.   4. The semiconductor device manufacturing apparatus according to claim 2, wherein the radially outer ends of the plurality of guide portions are all equidistant from the rotation center of the turntable. 5.   The said turntable has an engaging part for fixing the said base in the said predetermined position, when the said base moves to the predetermined position of radial direction outer side. Semiconductor device manufacturing equipment.   The semiconductor device manufacturing apparatus according to claim 5, wherein the turntable includes a release mechanism for releasing the engagement state of the engagement portion. A semiconductor device manufacturing method for manufacturing a semiconductor device by dividing a semiconductor wafer on which a plurality of elements are formed,
Modifying or processing boundary regions of the plurality of elements of the semiconductor wafer;
Fixing the semiconductor wafer on one surface of a sheet member having a stretchability, which is larger than the semiconductor wafer in plan view;
A method of manufacturing a semiconductor manufacturing apparatus, comprising: rotating the sheet member and extending the semiconductor wafer fixed to the sheet member in a radial direction by centrifugal force. A step of fixing the sheet member to a plurality of pedestals mounted on a turntable and movable in a radial direction by centrifugal force due to rotation of the turntable;
The semiconductor wafer fixed to the sheet member is separated into pieces by extending the sheet member in a radial direction by rotating the turntable and moving the plurality of pedestals radially outward. 2. A method for manufacturing a semiconductor manufacturing apparatus according to 1.

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