JP2011205247A - Method for manufacturing package, method for manufacturing piezoelectric vibrator, oscillator, electronic equipment and radiowave clock - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a package, capable of efficiently manufacturing the package.SOLUTION: The method for manufacturing the package includes a through electrode formation step of forming a through electrode which penetrates a first substrate 40 in the thickness direction to conduct the inside of a cavity and the outside of a package, wherein the through electrode formation step includes: a through hole formation step of forming through holes 30, 31 on the first substrate 40; a stud arrangement step of inserting a core material part 7 of a conductive stud 9 having a planar foundation part 8, and a core material part 7 erected on the surface of the foundation part 8 into the through holes 30, 31. The core material part 7 is inserted into the through holes 30, 31 by forming the through holes 30, 31 in the inverse-tapered shape whose diameter is gradually extended from the side of a first surface 40a of the first substrate 40 toward the side of a second surface 40b opposite to the first surface 40a in the through hole formation step, and attracting the stud 9 from the side of the second surface 40b through the through holes 30, 31 while moving the stud 9 on the first surface 40a by turning the first surface 40a of the first substrate 40 upward in the stud arrangement step.

Description

  The present invention relates to a package manufacturing method, a piezoelectric vibrator manufacturing method, an oscillator, an electronic device, and a radio timepiece.

  2. Description of the Related Art In recent years, a piezoelectric vibrator using a crystal or the like is used as a time source, a timing source such as a control signal, a reference signal source or the like in a mobile phone or a portable information terminal device. Various piezoelectric vibrators of this type are known, and one of them is a surface-mount type piezoelectric vibrator. As this type of piezoelectric vibrator, there is generally known a three-layer structure type in which a piezoelectric substrate on which a piezoelectric vibrating piece is formed is joined so as to be sandwiched between a base substrate and a lid substrate from above and below. In this case, the piezoelectric vibrating piece is accommodated in a cavity (sealed chamber) formed between the base substrate and the lid substrate.

In recent years, a two-layer structure type has been developed instead of the three-layer structure type described above. This type of piezoelectric vibrator has a two-layer structure in which a base substrate and a lid substrate are directly joined, and a piezoelectric vibrating piece is accommodated in a cavity formed between the two substrates. This two-layer structure type piezoelectric vibrator is excellent in that it can be made thinner than the three-layer structure, and is preferably used.
As such a two-layer structure type piezoelectric vibrator, a piezoelectric vibrator in which a piezoelectric vibrating piece and an external electrode formed on a base substrate are electrically connected by a through electrode formed on the base substrate is known (patent) Reference 1).

JP 2002-124845 A

  By the way, Patent Document 1 describes that a through electrode is formed by using a pin member made of metal as a conductive material. A specific method for forming the through electrode is to form a through hole having a straight cross section in a base substrate wafer to be a base substrate later, and then heat the pin to insert the pin member into the through hole while in the thermal softened state. Is described.

  However, when a large number of base substrates are formed from the base substrate wafer, a large number of through-holes proportional to the number of base substrates taken are formed in the base substrate wafer. Therefore, there is a problem that a great number of man-hours are required to drive the pin member into all the through holes. Further, when the base substrate wafer is cured while the pin member is being driven, it is necessary to reheat it to be in a heat softened state.

Therefore, in order to solve such a problem, a through electrode as shown below using a conductive casing provided with a flat base portion and a core portion standing on the surface of the base portion. A forming method is conceivable. That is, first, the core member of the housing is inserted into the through hole of the base substrate wafer from the first surface side of the base substrate wafer, and the first surface of the base substrate wafer and the surface of the base portion of the housing To close the through hole from the first surface side. Next, the through hole is filled with a paste-like filler (for example, glass frit) from the second surface side opposite to the first surface of the base substrate wafer, and then the filler is fired.
Thereby, it becomes possible to form a penetration electrode, without driving a pin member into a penetration hole, and it can aim at reduction of a manufacturing man-hour.

Here, as shown in FIGS. 18 to 23, as a method of inserting the core member 202 into the through hole 201 of the base substrate wafer 200, a so-called indirect method using two jigs as shown below can be considered. .
That is, as shown in FIG. 18, first, the core part 202 of the casing 203 is inserted into the insertion hole 204 of the first jig 205 in which the insertion hole 204 into which the core part 202 of the casing 203 is inserted is formed. The housing 203 is aligned with the first jig 205 by inserting it (a housing aligning step). Next, as shown in FIG. 19, the first jig 205 and the second jig 208 in which the housing hole 207 in which the housing 203 is housed from the base 206 side are formed are overlapped with each other while being aligned (healing). Assembling process). Thereafter, as shown in FIG. 20, after the first jig 205 and the second jig 208 are reversed and the housing 203 is housed in the housing hole 207 of the second jig 208 (jig reversing step). 21, the first jig 205 is removed from the second jig 208, and the housing 203 is adsorbed from the bottom side of the storage hole 207 in the second jig 208 by, for example, a magnet 209 or the like. It is held in 207 (adsorption process). Then, as shown in FIG. 22, the second jig 208 is reversed on the base substrate wafer 200 to release the suction of the housing 203 (suction release process), thereby making the through hole 201 as shown in FIG. 23. The core part 202 of the housing 203 is inserted into the inside.

  However, in the indirect method, the first jig 205 and the second jig 208 are used, so that a great number of man-hours are required.

  This invention is made | formed in view of the situation mentioned above, The objective is to provide the manufacturing method of the package which can manufacture a package efficiently.

In order to solve the above problems, the present invention proposes the following means.
A method for manufacturing a package according to the present invention is a method for manufacturing a package in which an electronic component can be enclosed in a cavity formed between a plurality of substrates bonded to each other. A through electrode forming step of forming a through electrode that penetrates the substrate in a thickness direction and that conducts between the inside of the cavity and the outside of the package; and the through electrode forming step includes forming a through hole in the first substrate. Inserting into the through hole the core material portion of a conductive casing comprising a through-hole forming step to be formed, a flat base portion, and a core portion standing on the surface of the base portion. An inverse taper that gradually increases in diameter from the first surface side of the first substrate toward the second surface side opposite to the first surface during the through-hole forming step. And forming the through hole in the shape of the first substrate during the housing arrangement step. The core portion is moved through the through hole by sucking the housing from the second surface side through the through hole while moving the housing on the first surface with the first surface facing upward. It is characterized by being inserted into the inside.

According to the present invention, the core part of the frame is erected on the surface of the base part, and in the case of the frame arrangement process, the state in which the case is tilted, that is, the side surface of the base part and the tip of the core part are Abutting on the first surface, the core member can be moved on the first surface with the core member inclined with respect to the first surface. When the casing is moved on the first surface in a state where the casing is collapsed in this way, when the casing passes over the through-hole, the tip of the core member portion extends from the opening on the first plane side of the through-hole to the through-hole. It is inserted as if it was transferred into.
Here, since the through hole has an inversely tapered shape, it is difficult for the tip of the core member to be caught on the inner peripheral surface of the through hole when the core member is inserted into the through hole. Therefore, the core part of the housing is smoothly inserted into the through hole. Moreover, since the housing is sucked from the second surface side through the through hole at this time, the core material portion of the housing is drawn into the through hole by the suction force, and the core material portion is more smoothly inserted into the through hole. Is done.
From the above, during the housing arrangement process, the housing is moved on the first surface of the first substrate, and the core material portion of the housing is penetrated only by sucking the housing through the through hole from the second surface side. Since it can insert smoothly in a hole, a package can be manufactured efficiently.

  Further, during the housing arrangement step, the first substrate is swung around a swing axis parallel to the first surface of the first substrate, and the first substrate is vibrated in the swing axis direction. Thus, the housing may be moved on the first surface of the first substrate.

  In this case, the first surface of the first substrate is inclined with respect to the horizontal plane by swinging the first substrate around the swing axis during the housing arrangement step. Thereby, the housing can be moved to the lower side along the first surface.

In addition, since the first substrate is swung around the swing axis and the first substrate is vibrated in the swing shaft direction in this way, a large number of housings are arranged on the first substrate. Even if it exists, many housings can be spread | diffused over the whole area of the said rocking-axis direction of a 1st surface, moving each housing to the lower side along a 1st surface.
In addition, in the process of moving the casing to the lower side along the first surface, the casing has moved to the lower end of the first substrate without the core portion of the casing being inserted into the through hole. Alternatively, the end portion can be positioned on the upper side by swinging the first substrate and inverting the inclination of the first substrate. Thereby, the casing in which the core part is not inserted into the through hole is moved on the first surface in the direction opposite to the direction before the inclination of the first substrate is reversed, and the through hole is formed in the first surface. It can be reciprocated over the area.
As described above, the core member can be reliably inserted into the through hole.

  In the case of the housing arrangement step, the suction of the housing from the second surface side may be repeated intermittently.

In this case, since the suction of the housing from the second surface side is intermittently repeated during the housing arrangement process, the core member can be reliably inserted into the through hole.
That is, in the case of the housing arrangement process, the back surface of the base portion may move on the first surface with the housing standing up with the first surface abutting on the first surface. And if the through hole is covered from the first surface side by the base portion of the standing body before the core part of the housing is inserted into the through hole, the second surface side through the through hole There is a possibility that the casing is continuously held on the through hole by the suction force from and the core member is not inserted into the through hole. However, even if the through hole is covered from the first surface side by the base portion of the casing in a standing state by intermittently repeating the suction of the casing from the second surface side, the casing is the through hole. Will not continue to hold on. Therefore, the casing covering the through hole can be moved from the through hole to open the through hole, and the core member can be reliably inserted into the through hole.

  The piezoelectric vibrator manufacturing method according to the present invention includes a step of performing the package manufacturing method, and a step of disposing the piezoelectric vibrating piece as the electronic component inside the cavity while being mounted on the through electrode. It is characterized by having.

  According to the present invention, since the package manufacturing method that can efficiently manufacture the package is employed, a low-cost piezoelectric vibrator can be provided.

The oscillator according to the present invention is characterized in that the piezoelectric vibrator manufactured by the piezoelectric vibrator manufacturing method is electrically connected to an integrated circuit as an oscillator.
The electronic device according to the present invention is characterized in that the piezoelectric vibrator manufactured by the method for manufacturing a piezoelectric vibrator is electrically connected to a time measuring unit.
The radio timepiece according to the present invention is characterized in that the piezoelectric vibrator manufactured by the method for manufacturing a piezoelectric vibrator is electrically connected to the filter portion.

  According to the oscillator, the electronic device, and the radio timepiece according to the present invention, since the low-cost piezoelectric vibrator is used, the cost can be reduced.

  According to the present invention, a package can be efficiently manufactured.

1 is an external perspective view showing a piezoelectric vibrator according to an embodiment of the present invention. FIG. 2 is an internal configuration diagram of the piezoelectric vibrator shown in FIG. 1, and is a plan view with a lid substrate removed. It is sectional drawing in the AA of FIG. FIG. 2 is an exploded perspective view of the piezoelectric vibrator shown in FIG. 1. It is a top view of a piezoelectric vibrating piece. It is a bottom view of a piezoelectric vibrating piece. It is sectional drawing in the BB line of FIG. 3 is a flowchart of a method for manufacturing a piezoelectric vibrator according to an embodiment of the present invention. It is a disassembled perspective view of a wafer body. It is explanatory drawing showing a housing arrangement | positioning process. It is explanatory drawing showing a housing arrangement | positioning process. It is explanatory drawing showing a housing arrangement | positioning process. It is explanatory drawing showing a housing arrangement | positioning process. It is explanatory drawing showing a housing arrangement | positioning process. It is a block diagram which shows one Embodiment of an oscillator. It is a lineblock diagram showing one embodiment of electronic equipment. It is a block diagram which shows one Embodiment of a radio timepiece. It is one process figure of the insertion method of the core part to the through-hole of the conventional wafer for base substrates. It is one process figure of the insertion method of the core part to the through-hole of the conventional wafer for base substrates. It is one process figure of the insertion method of the core part to the through-hole of the conventional wafer for base substrates. It is one process figure of the insertion method of the core part to the through-hole of the conventional wafer for base substrates. It is one process figure of the insertion method of the core part to the through-hole of the conventional wafer for base substrates. It is one process figure of the insertion method of the core part to the through-hole of the conventional wafer for base substrates.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
(Piezoelectric vibrator)
As shown in FIGS. 1 to 4, the piezoelectric vibrator 1 according to this embodiment includes a piezoelectric vibrating piece 4 as an electronic component in a cavity C formed between a plurality of substrates 2 and 3 bonded to each other. It is a surface mount type configuration including the package 5 enclosed. The package 5 is formed in a box shape in which a base substrate (first substrate) 2 and a lid substrate 3 are laminated in two layers. In FIG. 4, the excitation electrode 15, the extraction electrodes 19 and 20, the mount electrodes 16 and 17, and the weight metal film 21, which will be described later, are omitted for easy understanding of the drawing.

  As shown in FIGS. 5 to 7, the piezoelectric vibrating piece 4 is a tuning fork type vibrating piece formed of a piezoelectric material such as crystal, lithium tantalate, or lithium niobate, and when a predetermined voltage is applied. It vibrates.

The piezoelectric vibrating reed 4 includes a pair of vibrating arm portions 10 and 11 arranged in parallel, a base portion 12 that integrally fixes the base end sides of the pair of vibrating arm portions 10 and 11, and a pair of vibrating arm portions 10. , 11 and the first excitation electrode 13 and the second excitation electrode 14, which are formed on the outer surface of the pair 11 and vibrate the pair of vibrating arm portions 10, 11, the first excitation electrode 13, and the second excitation electrode 13. And two mounting electrodes 16 and 17 electrically connected to the two excitation electrodes 14.
In addition, the piezoelectric vibrating reed 4 according to the present embodiment includes groove portions 18 formed along the longitudinal direction of the vibrating arm portions 10 and 11 on both main surfaces of the pair of vibrating arm portions 10 and 11. The groove portion 18 is formed from the proximal end side of the vibrating arm portions 10 and 11 to the vicinity of the middle.

  As shown in FIGS. 5 and 6, the excitation electrodes 13 and 14 are formed on the main surfaces of the pair of vibrating arm portions 10 and 11. The excitation electrodes 13 and 14 are formed of a single-layer conductive film such as chromium (Cr), for example. The excitation electrode 15 including the first excitation electrode 13 and the second excitation electrode 14 is an electrode that vibrates the pair of vibrating arm portions 10 and 11 at a predetermined resonance frequency in a direction approaching or separating from each other. Patterned on the outer surfaces of the vibrating arm portions 10 and 11 while being electrically separated from each other. Specifically, the first excitation electrode 13 is mainly formed on the groove portion 18 of one vibration arm portion 10 and on both side surfaces of the other vibration arm portion 11, and the second excitation electrode 14 is formed on one side. Are formed mainly on both side surfaces of the vibrating arm portion 10 and on the groove portion 18 of the other vibrating arm portion 11.

Further, the first excitation electrode 13 and the second excitation electrode 14 are electrically connected to the mount electrodes 16 and 17 via the extraction electrodes 19 and 20 on both main surfaces of the base portion 12, respectively. A voltage is applied to the piezoelectric vibrating reed 4 via the mount electrodes 16 and 17.
The mount electrodes 16 and 17 and the lead electrodes 19 and 20 are, for example, a laminated film of chromium (Cr) and gold (Au), and are formed on the surface after forming a chromium film having good adhesion with crystal as a base. A gold thin film is applied.

  A weight metal film 21 for adjusting (frequency adjustment) to vibrate its own vibration state within a predetermined frequency range is coated on the tips of the pair of vibrating arm portions 10 and 11. The weight metal film 21 is divided into a coarse adjustment film 21a used when the frequency is roughly adjusted and a fine adjustment film 21b used when the frequency is finely adjusted. By adjusting the frequency using the coarse adjustment film 21a and the fine adjustment film 21b, the frequency of the pair of vibrating arm portions 10 and 11 can be kept within the range of the nominal frequency of the device.

  As shown in FIGS. 3 and 4, the piezoelectric vibrating reed 4 configured in this manner is bump-bonded to the inner surface (upper surface) of the base substrate 2 using bumps B such as gold. More specifically, bump bonding is performed with a pair of mount electrodes 16 and 17 in contact with two bumps B formed on lead electrodes 36 and 37 (described later) patterned on the inner surface of the base substrate 2. ing.

  The lid substrate 3 is a transparent insulating substrate made of a glass material, for example, soda lime glass, and is formed in a plate shape as shown in FIGS. A rectangular recess 3 a in which the piezoelectric vibrating reed 4 is accommodated is formed on the bonding surface side to which the base substrate 2 is bonded. The recess 3 a is a cavity recess that serves as a cavity C that accommodates the piezoelectric vibrating reed 4 when the substrates 2 and 3 are overlapped.

As shown in FIG. 3, a bonding film 35 for anodic bonding is formed on the bonding surface of the lid substrate 3 with the base substrate 2. The bonding film 35 is made of a conductive material such as aluminum, and is formed by a film forming method such as sputtering or CVD. In addition, you may form in the whole inner surface of the recessed part 3a. Thereby, the patterning of the bonding film 35 becomes unnecessary, and the manufacturing cost can be reduced.
The lid substrate 3 is anodically bonded to the base substrate 2 via the bonding film 35 with the recess 3a facing the base substrate 2 side.

Similarly to the lid substrate 3, the base substrate 2 is a transparent insulating substrate made of a glass material, for example, soda lime glass, and is formed in a plate shape as shown in FIGS.
In the base substrate 2, a pair of through holes 30 and 31 that penetrate the base substrate 2 are formed. The through hole 30 is formed in an inversely tapered shape that gradually increases in diameter from the inner surface of the base substrate 2 toward the outer surface (lower surface). In the present embodiment, the through holes 30 and 31 have one through hole 30 formed at a position corresponding to the base 12 side of the mounted piezoelectric vibrating reed 4, and at a position corresponding to the tip side of the vibrating arm sections 10 and 11. The other through hole 31 is formed.

  The pair of through holes 30 and 31 are formed with a pair of through electrodes 32 and 33 formed so as to fill the through holes 30 and 31. As shown in FIG. 3, the through electrodes 32 and 33 are formed by the cylindrical body 6 and the core member 7 that are integrally fixed to the through holes 30 and 31 by firing. 31 are completely closed to maintain the airtightness in the cavity C, and the external electrodes 38 and 39, which will be described later, and the routing electrodes 36 and 37 are electrically connected.

  The cylindrical body 6 is obtained by firing a paste-like glass frit described later. The cylindrical body 6 is formed in a cylindrical shape having both ends flat and substantially the same thickness as the base substrate 2. And the core part 7 is distribute | arranged to the center of the cylinder 6 so that the cylinder 6 may be penetrated. The cylindrical body 6 and the core member 7 are fired in a state of being embedded in the through holes 30 and 31 and are firmly fixed to the through holes 30 and 31.

  The core material portion 7 is a conductive core material formed in a cylindrical shape from a metal material such as stainless steel, silver, or aluminum. Both ends are flat like the cylindrical body 6 and substantially the same as the thickness of the base substrate 2. It is formed to have a thickness. The core member 7 is located at the approximate center 6 c of the cylindrical body 6 and is firmly fixed to the cylindrical body 6 by firing the cylindrical body 6. The through electrodes 32 and 33 are ensured to have electrical conductivity through the conductive core portion 7.

  The pair of lead electrodes 36 and 37 electrically connect one of the pair of through electrodes 32 and 33 to the one mount electrode 16 of the piezoelectric vibrating reed 4 and the other through electrode. 33 and the other mount electrode 17 of the piezoelectric vibrating reed 4 are patterned so as to be electrically connected.

  More specifically, the one lead-out electrode 36 is formed directly above the one through electrode 32 so as to be positioned directly below the base 12 of the piezoelectric vibrating piece 4. The other routing electrode 37 is routed from the position adjacent to the one routing electrode 36 along the vibrating arm portions 10 and 11 to the distal end side of the vibrating arm portions 10 and 11, and then the other through electrode 33. It is formed so that it may be located just above.

  Bumps B are formed on the pair of lead-out electrodes 36 and 37, and the piezoelectric vibrating reed 4 is mounted using the bumps B. Thereby, one mount electrode 16 of the piezoelectric vibrating reed 4 is electrically connected to one through electrode 32 through one routing electrode 36, and the other mount electrode 17 is passed through the other routing electrode 37 to the other penetration electrode. The electrode 33 is electrically connected.

  Further, as shown in FIGS. 1, 3 and 4, external electrodes 38 and 39 are formed on the outer surface of the base substrate 2 so as to be electrically connected to the pair of through electrodes 32 and 33, respectively. . That is, one external electrode 38 is electrically connected to the first excitation electrode 13 of the piezoelectric vibrating reed 4 via one through electrode 32 and one routing electrode 36. The other external electrode 39 is electrically connected to the second excitation electrode 14 of the piezoelectric vibrating reed 4 via the other through electrode 33 and the other routing electrode 37.

  When the piezoelectric vibrator 1 configured as described above is operated, a predetermined drive voltage is applied to the external electrodes 38 and 39 formed on the base substrate 2. As a result, a voltage is applied to the excitation electrode 15 including the first excitation electrode 13 and the second excitation electrode 14 of the piezoelectric vibrating reed 4 so that the pair of vibrating arm portions 10 and 11 are moved in a predetermined direction in the direction of approaching and separating. Can be vibrated at a frequency of The vibration of the pair of vibrating arm portions 10 and 11 can be used as a time source, a timing source for control signals, a reference signal source, and the like.

(Piezoelectric vibrator manufacturing method)
Next, a method for manufacturing the piezoelectric vibrator 1 (a method for manufacturing a package) in the present embodiment will be described based on a flowchart shown in FIG.
First, the piezoelectric vibrating reed manufacturing step S10 is performed to manufacture the piezoelectric vibrating reed 4 shown in FIGS. Specifically, a quartz Lambert rough is first sliced at a predetermined angle to obtain a wafer having a constant thickness. Subsequently, the wafer is lapped and roughly processed, and then the work-affected layer is removed by etching, and then mirror polishing such as polishing is performed to obtain a wafer having a predetermined thickness. Subsequently, after appropriate processing such as cleaning is performed on the wafer, the wafer is patterned with the outer shape of the piezoelectric vibrating reed 4 by a photolithography technique, and a metal film is formed and patterned, and the excitation electrode 15 and the extraction electrode 15 are extracted. Electrodes 19 and 20, mount electrodes 16 and 17, and weight metal film 21 are formed. Thereby, the some piezoelectric vibrating piece 4 is producible.

  Further, after the piezoelectric vibrating reed 4 is manufactured, the resonance frequency is coarsely adjusted. This is done by irradiating the coarse adjustment film 21a of the weight metal film 21 with laser light to evaporate a part thereof and changing the weight. Note that fine adjustment for adjusting the resonance frequency with higher accuracy is performed after mounting.

  Next, as shown in FIG. 9, a lid substrate wafer 50 that will later become the lid substrate 3 (see FIG. 3) is prepared at the same time as or before and after the above-described steps until the state just before anodic bonding is performed. A wafer manufacturing step S20 is performed. Specifically, after polishing and cleaning soda-lime glass to a predetermined thickness, a disk-shaped lid substrate wafer 50 is formed by removing the outermost work-affected layer by etching or the like (S21). Next, a recess forming step S22 is performed in which a plurality of cavity recesses 3a are formed in the matrix direction on the bonding surface of the lid substrate wafer 50 by etching or the like. Next, a bonding surface polishing step S23 for polishing the bonding surface with the base substrate wafer 40 is performed.

  Next, a bonding film forming step S24 for forming the bonding film 35 on the bonding surface with the base substrate wafer 40 is performed. The bonding film 35 may be formed on the entire inner surface of the recess 3 a in addition to the bonding surface with the base substrate wafer 40. Thereby, the patterning of the bonding film 35 becomes unnecessary, and the manufacturing cost can be reduced. The bonding film 35 can be formed by a film forming method such as sputtering or CVD. In addition, since the bonding surface polishing step S23 is performed before the bonding film forming step S24, the flatness of the surface of the bonding film 35 is ensured, and stable bonding with the base substrate wafer 40 can be realized.

  Next, a second wafer for producing a base substrate wafer (first substrate) 40, which will later become the base substrate 2 (see FIG. 3), up to the state immediately before anodic bonding, at the same time as the above process or before and after. Manufacturing process S30 is performed. First, after polishing and washing soda-lime glass to a predetermined thickness, a disk-shaped base substrate wafer 40 is formed by removing the outermost work-affected layer by etching or the like (S31). The thickness of the base substrate wafer 40 is, for example, 500 μm.

  Next, as shown in FIG. 3, a through electrode forming step S <b> 32 for forming through electrodes 32 and 33 that penetrate the base substrate 2 in the thickness direction and conduct the inside of the cavity C and the outside of the piezoelectric vibrator 1 is performed. Do. Details of the through electrode forming step S32 will be described below.

  In the through electrode forming step S32, first, as shown in FIG. 10, through holes 30 and 31 penetrating in the thickness direction of the base substrate wafer 40 are formed in the hole forming region R1 located at the center of the base substrate wafer 40. For example, a through-hole forming step S32A formed by a sandblast method or the like is performed. At this time, in this embodiment, the through hole is formed in a reverse taper shape that gradually increases in diameter from the inner surface (first surface) 40a side of the base substrate wafer 40 toward the outer surface (second surface) 40b side opposite to the inner surface 40a. 30 and 31 are formed. The outer surface 40b and the inner surface 40a of the base substrate wafer 40 are the outer surface and the inner surface of the subsequent base substrate 2, respectively.

Here, the inner diameter of the openings of the through holes 30 and 31 on the inner surface 40a side of the base substrate wafer 40 is, for example, 200 μm. Further, the taper angle θ (see FIG. 12) of the through holes 30 and 31 is, for example, 20 degrees.
10 and FIG. 11 and FIG. 14 shown below, the number of the through holes 30 and 31 is omitted and the size and the like are exaggerated for easy understanding of the drawings. The number, size, etc. of 31 are not limited to the illustrated example.

Next, the core material portion 7 of the conductive casing 9 including the core material portion 7 constituting a part of the through electrodes 32 and 33 and the base portion 8 on which the core material portion 7 is erected is penetrated. A housing arrangement process S32B to be inserted into the holes 30 and 31 is performed.
In the illustrated example, the core portion 7 of the housing 9 is formed in a columnar shape, and the base portion 8 is formed in a disk shape. Moreover, the length of the core part 7 is 480 micrometers, for example, the diameter of the core part 7 is 150 micrometers, and the diameter of the base part 8 is 300 micrometers. Furthermore, the core part 7 is erected along the normal D direction (see FIG. 12) of the base part 8 at the center of the surface of the base part 8.

  Here, before the detailed description of the housing arrangement step S32B, the insertion device 70 used in the housing arrangement step S32B will be described. As shown in FIG. 10, the insertion device 70 includes a dish-shaped holding member 71 that holds the base substrate wafer 40 and the holding member 71, and defines the suction chamber 72 together with the bottom wall portion 71 a of the holding member 71. A base member 73, a suction pump 74 that vacuum-sucks the inside of the suction chamber 72, a swing means 75 that swings the base member 73, and a vibration means 76 that vibrates the base member 73. Yes.

  A surface 71c of the bottom wall portion 71a of the holding member 71 is flat and faces upward, and a holding recess 77 for holding the base substrate wafer 40 is formed at the center of the surface 71c. In the holding recess 77, the base substrate wafer 40 is held with the inner surface 40a facing upward, and the inner surface 40a of the base substrate wafer 40 and the surface 71c of the bottom wall portion 71a of the holding member 71 , Will be the same. In the illustrated example, there is a gap between the side surface of the base substrate wafer 40 and the inner peripheral surface of the holding recess 77 in the wafer holding state, but this gap may not be present.

  A plurality of suction holes 78 that open toward the back surface 71 d side of the bottom wall 71 a of the holding member 71 and communicate with the holding recess 77 and the suction chamber 72 are formed on the bottom surface of the holding recess 77. These suction holes 78 are formed corresponding to the through holes 30 and 31 of the base substrate wafer 40, and all the through holes 30 and 31 communicate with different suction holes 78 in the wafer holding state. . As a result, the suction chamber 72 communicates with the through holes 30 and 31 through the suction hole 78 from the outer surface 40b side of the base substrate wafer 40.

The swinging means 75 swings the base member 73 around the swing axis O parallel to the inner surface 40a of the base substrate wafer 40 while holding the wafer, and moves the base substrate wafer 40 around the swing axis O. Rock. In the example shown here, since the inner surface 40a of the base substrate wafer 40 and the surface 71c of the bottom wall portion 71a of the holding member 71 are flush with each other in the wafer holding state, the swing axis O is the holding member 71. Is parallel to the surface 71c of the bottom wall 71a.
The vibration means 76 swings (reciprocates) the base member 73 in the swing axis O direction.

  In the housing arrangement step S32B using the insertion device 70 described above, the outer surface 40b is passed through the through holes 30 and 31 while the housing 9 is moved on the inner surface 40a with the inner surface 40a of the base substrate wafer 40 facing upward. The core member 7 is inserted into the through holes 30 and 31 by sucking the housing 9 from the side. At this time, in the present embodiment, the base substrate wafer 40 is swung around the swing axis O, and the base substrate wafer 40 is vibrated in the swing axis O direction, whereby the inner surface 40a of the base substrate wafer 40 is moved. To move the housing 9.

  More specifically, first, the base substrate wafer 40 with the inner surface 40 a facing upward is held in the holding recess 77 of the insertion device 70. Further, the housing group 90 in which a large number of housings 9 are gathered is arranged on the outer peripheral portion of the bottom wall portion 71a of the holding member 71 on the peripheral wall portion 71b side with respect to the central portion where the holding concave portion 77 is formed. At this time, the housing group 90 is arranged in a portion of the outer peripheral portion of the bottom wall portion 71a that intersects a virtual axis extending in a direction parallel to the surface 71c of the bottom wall portion 71a and perpendicular to the swing axis O direction. To do. The total number of the casings 9 in the casing group 90 may be larger than the total number of the through holes 30 and 31 of the base substrate wafer 40.

  Next, as shown in FIG. 11, the base member 73 is pivoted by the swinging means 75 so that the portion of the outer peripheral portion of the bottom wall portion 71a where the housing group 90 is disposed moves upward. Swing around O. At this time, the base substrate wafer 40 is preferably swung so that the inner surface 40a of the base substrate wafer 40 is inclined, for example, by 4 degrees with respect to a horizontal plane. Thereby, the housing 9 can be moved to the lower side along the surface 71 c of the bottom wall portion 71 a of the holding member 71 and the inner surface 40 a of the base substrate wafer 40.

  At this time, the base member 73 is vibrated in the direction of the swing axis O by the vibration means 76, and the base substrate wafer 40 is vibrated in the direction of the swing axis O. The vibration of the base substrate wafer 40 by the vibration means 76 is preferably, for example, an amplitude of about 3 mm and a frequency of 5 to 20 Hz. Thereby, even when a large number of the casings 9 are arranged as the casing group 90 on the base substrate wafer 40 as in the present embodiment, the casings 9 are arranged on the lower side along the inner surface 40a. The plurality of housings 9 can be diffused over the entire area of the inner surface 40a in the direction of the swing axis O.

  Further, at this time, as shown in FIG. 12, the side surface 8a of the base portion 8 and the tip 7a of the core portion 7 are brought into contact with the inner surface 40a of the base substrate wafer 40, as shown in FIG. 7 can be moved on the inner surface 40a in a state of being inclined with respect to the inner surface 40a. When the casing 9 is moved on the inner surface 40a in a state where the casing 9 is collapsed, as shown in FIG. 13, when the casing 9 passes over the through holes 30 and 31, the tip 7a of the core portion 7 is moved. The through holes 30 and 31 are inserted into the through holes 30 and 31 through the openings on the inner surface 40a side.

  Here, since the through holes 30 and 31 are inversely tapered, when the core member 7 is inserted into the through holes 30 and 31, the tip 7 a of the core member 7 is inserted into the through holes 30 and 31. It is difficult to get caught on the inner peripheral surface of. Therefore, the core member 7 of the housing 9 is smoothly inserted into the through holes 30 and 31.

  By the way, in the process of moving the housing 9 downward along the inner surface 40a of the base substrate wafer 40 as indicated by a two-dot chain line shown in FIG. It is conceivable that the housing 9 passes over the hole forming region R1 of the base substrate wafer 40 and moves to the lower end of the base substrate wafer 40 without being inserted into the base substrate wafer 40.

  In this case, as shown in FIG. 14, the base substrate wafer 40 is swung to the opposite side around the swing axis O, and the inclination of the base substrate wafer 40 is reversed, so that the end portion is turned upward. Position. As a result, the casing 9 in which the core member 7 is not inserted into the through holes 30 and 31 is moved on the inner surface 40a in the direction opposite to the direction before reversing the inclination of the base substrate wafer 40, and the holes in the inner surface 40a are moved. It can be reciprocated on the formation region R1. When the inclination of the base substrate wafer 40 is reversed in this way, the base substrate wafer 40 is swung so that the inner surface 40a of the base substrate wafer 40 is inclined, for example, by 2 degrees with respect to the horizontal plane. Is preferred.

  As shown in FIG. 11, in this embodiment, the suction chamber 72 is vacuum-sucked by the suction pump 74 in conjunction with the swing and vibration of the base substrate wafer 40 as described above. Here, since the suction chamber 72 communicates with the through holes 30 and 31 from the outer surface 40b side of the base substrate wafer 40 through the suction holes 78, the housing 9 on the inner surface 40a of the base substrate wafer 40 is provided with a suction pump. By vacuum suction 74, the suction is performed from the outer surface 40 b side of the base substrate wafer 40 through the through holes 30 and 31.

Then, as described above, the core portion 7 of the housing 9 that moves on the inner surface 40a of the base substrate wafer 40 is drawn into the through holes 30 and 31 by the suction force, and the core portion 7 becomes the through hole 30. It is more smoothly inserted into 31.
In the present embodiment, the suction by the suction pump 74 is repeated intermittently. At this time, for example, after operating the suction pump 74 to set the internal pressure of the suction chamber 72 to 0.5 MPa for 0.8 seconds, the operation of the suction pump 74 is stopped and the internal pressure of the suction chamber 72 is returned to atmospheric pressure for 0.4 seconds. Then repeat these.

  The above-described oscillation and vibration of the base substrate wafer 40 and suction of the housing 9 through the through holes 30 and 31 are performed until the core member 7 is inserted into all the through holes 30 and 31. . In addition, by inserting the core part 7 of the housing 9 from the inner surface 40a of the base substrate wafer 40, the inner surface 40a of the base substrate wafer 40 and the surface of the base portion 8 of the housing 9 are brought into contact with each other and penetrated. The holes 30 and 31 are closed from the inner surface 40a side.

  Next, a filling step S <b> 32 </ b> D for filling the through holes 30 and 31 with a paste-like glass frit (not shown) constituting a part of the through electrodes 32 and 33 is performed. At this time, the glass frit is filled into the through holes 30 and 31 from the outer surface 40 b side of the base substrate wafer 40. Here, since the through holes 30 and 31 are closed from the inner surface 40 a side of the base substrate wafer 40, the glass frit is suppressed from leaking from the inner surface 40 a side of the through holes 30 and 31.

  After the glass frit filling step S32D, the glass frit may remain on the outer surface 40b of the base substrate wafer 40. In this case, since the glass frit on the outer surface 40b is removed by a polishing step S32I after firing, which will be described later, it is not necessary to perform a separate step of removing the glass frit. However, by adding a separate step of removing the glass frit, the firing time of the glass frit can be shortened in the firing step S32H described later, and the time required for polishing in the polishing step S32I can be shortened.

  Subsequently, a firing step S32H is performed in which the glass frit filled in the through holes 30 and 31 is fired and cured. In the firing step S32H, the glass frit filled in the through holes 30 and 31 is fired and cured at a predetermined temperature. By performing this firing step S32H, the glass frit is firmly fixed to the through holes 30 and 31 and the core member 7 to form the cylindrical body 6, and the through electrodes 32 and 33 are formed.

Finally, a polishing step S32I for polishing the base substrate wafer 40 and the base portion 8 of the housing 9 is performed. Specifically, the outer surface 40b side of the base substrate wafer 40 is polished to expose the tip 7a of the core portion 7, and the base portion 8 of the housing 9 is polished and removed. As a result, as shown in FIG. 3, it is possible to obtain a plurality of through electrodes 32 and 33 in which the cylindrical body 6 and the core member 7 are integrally fixed.
Thus, the through electrode forming step S32 is completed.

  Next, as shown in FIG. 9, a plurality of lead electrodes 36 and 37 that are electrically connected to the through electrodes are formed as a lead electrode forming step S33. Then, spire-shaped bumps made of gold or the like are formed on the routing electrodes 36 and 37, respectively. In FIG. 9, the illustration of the bumps is omitted for easy viewing of the drawing. At this point, the second wafer manufacturing process is completed.

  Next, a mounting process S40 is performed in which the piezoelectric vibrating reed 4 is bonded onto the lead electrodes 36 and 37 of the base substrate wafer 40 via the bumps B. Thereafter, the lid substrate wafer 50 is bonded to the base substrate wafer 40. A superimposition step S50 for superimposing is performed.

  Then, after the superposition step S50, the two superposed wafers are put into an anodic bonding apparatus (not shown), and a predetermined voltage is applied in a predetermined temperature atmosphere to perform anodic bonding to form a wafer body 60. I do. By the way, when performing anodic bonding, as shown in FIG. 3, the through holes 30 and 31 formed in the base substrate wafer 40 are completely closed by the through electrodes 32 and 33. The vacuum state is not impaired through the through holes 30 and 31. In addition, since the cylindrical body 6 and the core member 7 are integrally fixed by firing and these are firmly fixed to the through holes 30 and 31, the vacuum state in the cavity C is reliably ensured. Can be maintained.

  After the anodic bonding described above is completed, a conductive material is patterned on the outer surface 40b of the base substrate wafer 40, and a pair of external electrodes 38, 39 electrically connected to the pair of through electrodes 32, 33, respectively. An external electrode forming step S70 for forming a plurality of (see FIG. 3) is performed.

Next, in the state of the wafer body 60, a fine adjustment step of finely adjusting the frequency of each piezoelectric vibrator 1 sealed in the cavity C to be within a predetermined range is performed (S80).
After the fine adjustment of the frequency is completed, a cutting process is performed in which the bonded wafer body 60 is cut along the cutting line M to make pieces (S90).
Thereafter, the internal electrical characteristic inspection (S100) is performed, whereby the manufacture of the piezoelectric vibrator 1 is completed.

  As described above, according to the piezoelectric vibrator manufacturing method according to the present embodiment, the outer surface 40b side is moved while moving the housing 9 on the inner surface 40a of the base substrate wafer 40 in the housing arrangement step S32B. Since the core part 7 of the housing 9 can be smoothly inserted into the through holes 30 and 31 simply by sucking the housing 9 through the through holes 30 and 31, the package 5 can be manufactured efficiently and piezoelectric The cost of the vibrator 1 can be reduced.

In addition, since the suction of the housing 9 from the outer surface 40b side is repeated intermittently during the housing arrangement step S32B, the core member 7 can be reliably inserted into the through holes 30 and 31.
That is, at the time of the housing arrangement step S32B, as shown by a two-dot chain line shown in FIG. 14, the back surface of the base portion 8 may contact the inner surface 40a and move on the inner surface 40a with the housing 9 standing up. . And before the core part 7 of the housing 9 is inserted into the through holes 30 and 31, when the through holes 30 and 31 are covered from the inner surface 40a side by the base portion 8 of the housing 9 in an upright state, The housing 9 is held on the through holes 30 and 31 by the suction force from the outer surface 40b through the through holes 30 and 31, and the core member 7 may not be inserted into the through holes 30 and 31. However, even if the through holes 30 and 31 are covered from the inner surface 40a side by the base portion 8 of the casing 9 in a standing state by intermittently repeating the suction of the casing 9 from the outer surface 40b side, The body 9 does not continue to be held on the through holes 30 and 31. Therefore, the housing 9 covering the through holes 30 and 31 can be moved from above the through holes 30 and 31 to open the through holes 30 and 31, and the core portion 7 can be reliably placed in the through holes 30 and 31. Can be inserted.

(Oscillator)
Next, an embodiment of an oscillator according to the present invention will be described with reference to FIG.
As shown in FIG. 15, the oscillator 110 according to the present embodiment is configured such that the piezoelectric vibrator 1 is an oscillator electrically connected to an integrated circuit 111. The oscillator 110 includes a substrate 113 on which an electronic element component 112 such as a capacitor is mounted. An integrated circuit 111 for an oscillator is mounted on the substrate 113, and the piezoelectric vibrating piece 4 of the piezoelectric vibrator 1 is mounted in the vicinity of the integrated circuit 111. The electronic element component 112, the integrated circuit 111, and the piezoelectric vibrator 1 are electrically connected by a wiring pattern (not shown). Each component is molded with a resin (not shown).

In the oscillator 110 configured as described above, when a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating reed 4 in the piezoelectric vibrator 1 vibrates. This vibration is converted into an electric signal by the piezoelectric characteristics of the piezoelectric vibrating piece 4 and input to the integrated circuit 111 as an electric signal. The input electrical signal is subjected to various processes by the integrated circuit 111 and output as a frequency signal. Thereby, the piezoelectric vibrator 1 functions as an oscillator.
In addition, by selectively setting the configuration of the integrated circuit 111, for example, an RTC (real-time clock) module or the like as required, the operation date and time of the device or external device in addition to a single-function oscillator for a clock, etc. A function for controlling the time, providing a time, a calendar, and the like can be added.

  According to the oscillator 110 of this embodiment, since the low-cost piezoelectric vibrator 1 is provided, the cost can be reduced.

(Electronics)
Next, an embodiment of an electronic apparatus according to the present invention will be described with reference to FIG. Note that a portable information device 120 having the above-described piezoelectric vibrator 1 will be described as an example of the electronic device.
First, the portable information device 120 of this embodiment is represented by, for example, a mobile phone, and is a development and improvement of a wrist watch in the prior art. The appearance is similar to that of a wristwatch, and a liquid crystal display is arranged in a portion corresponding to a dial so that the current time and the like can be displayed on this screen. Further, when used as a communication device, it is possible to perform communication similar to that of a conventional mobile phone by using a speaker and a microphone that are removed from the wrist and incorporated in the inner portion of the band. However, it is much smaller and lighter than conventional mobile phones.

  Next, the configuration of the portable information device 120 of this embodiment will be described. As shown in FIG. 16, the portable information device 120 includes the piezoelectric vibrator 1 and a power supply unit 121 for supplying power. The power supply unit 121 is made of, for example, a lithium secondary battery. The power supply unit 121 includes a control unit 122 that performs various controls, a clock unit 123 that counts time, a communication unit 124 that communicates with the outside, a display unit 125 that displays various information, and the like. A voltage detection unit 126 that detects the voltage of the functional unit is connected in parallel. Power is supplied to each functional unit by the power supply unit 121.

  The control unit 122 controls each function unit to control operation of the entire system such as transmission and reception of audio data, measurement and display of the current time, and the like. The control unit 122 includes a ROM in which a program is written in advance, a CPU that reads and executes the program written in the ROM, and a RAM that is used as a work area for the CPU.

  The timer unit 123 includes an integrated circuit including an oscillation circuit, a register circuit, a counter circuit, an interface circuit, and the like, and the piezoelectric vibrator 1. When a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating reed 4 vibrates, and the vibration is converted into an electric signal by the piezoelectric characteristics of the crystal and is input to the oscillation circuit as an electric signal. The output of the oscillation circuit is binarized and counted by a register circuit and a counter circuit. Then, signals are transmitted to and received from the control unit 122 via the interface circuit, and the current time, current date, calendar information, and the like are displayed on the display unit 125.

The communication unit 124 has functions similar to those of a conventional mobile phone, and includes a radio unit 127, a voice processing unit 128, a switching unit 129, an amplification unit 130, a voice input / output unit 131, a telephone number input unit 132, a ring tone generation unit. 133 and a call control memory unit 134.
The radio unit 127 exchanges various data such as audio data with the base station via the antenna 135. The audio processing unit 128 encodes and decodes the audio signal input from the radio unit 127 or the amplification unit 130. The amplifying unit 130 amplifies the signal input from the audio processing unit 128 or the audio input / output unit 131 to a predetermined level. The voice input / output unit 131 includes a speaker, a microphone, and the like, and amplifies a ringtone and a received voice or collects a voice.

In addition, the ring tone generator 133 generates a ring tone in response to a call from the base station. The switching unit 129 switches the amplifying unit 130 connected to the voice processing unit 128 to the ringing tone generating unit 133 only when an incoming call is received, so that the ringing tone generated by the ringing tone generating unit 133 passes through the amplifying unit 130. To the audio input / output unit 131.
Note that the call control memory unit 134 stores a program related to incoming / outgoing call control of communication. The telephone number input unit 132 includes, for example, number keys from 0 to 9 and other keys. By pressing these number keys and the like, a telephone number of a call destination is input.

  The voltage detection unit 126 detects the voltage drop and notifies the control unit 122 when the voltage applied to each functional unit such as the control unit 122 by the power supply unit 121 falls below a predetermined value. . The predetermined voltage value at this time is a value set in advance as a minimum voltage necessary to stably operate the communication unit 124, and is, for example, about 3V. Upon receiving the voltage drop notification from the voltage detection unit 126, the control unit 122 prohibits the operations of the radio unit 127, the voice processing unit 128, the switching unit 129, and the ring tone generation unit 133. In particular, it is essential to stop the operation of the wireless unit 127 with high power consumption. Further, the display unit 125 displays that the communication unit 124 has become unusable due to insufficient battery power.

That is, the operation of the communication unit 124 can be prohibited by the voltage detection unit 126 and the control unit 122, and that effect can be displayed on the display unit 125. This display may be a text message, but as a more intuitive display, a x (X) mark may be attached to the telephone icon displayed at the top of the display surface of the display unit 125.
In addition, the function of the communication part 124 can be stopped more reliably by providing the power supply cutoff part 136 that can selectively cut off the power of the part related to the function of the communication part 124.

  According to the portable information device 120 of the present embodiment, since the low-cost piezoelectric vibrator 1 is provided, the cost can be reduced.

(Radio watch)
Next, an embodiment of a radio timepiece according to the present invention will be described with reference to FIG.
As shown in FIG. 17, the radio-controlled timepiece 140 according to the present embodiment includes the piezoelectric vibrator 1 electrically connected to the filter unit 141, and receives a standard radio wave including timepiece information to accurately It is a clock with a function of automatically correcting and displaying the correct time.
In Japan, there are transmitting stations (transmitting stations) that transmit standard radio waves in Fukushima Prefecture (40 kHz) and Saga Prefecture (60 kHz), each transmitting standard radio waves. Long waves such as 40 kHz or 60 kHz have both the property of propagating the ground surface and the property of propagating while reflecting the ionosphere and the ground surface, so the propagation range is wide, and the above two transmitting stations cover all of Japan. is doing.

Hereinafter, the functional configuration of the radio timepiece 140 will be described in detail.
The antenna 142 receives a long standard wave of 40 kHz or 60 kHz. The long-wave standard radio wave is obtained by subjecting time information called a time code to AM modulation on a 40 kHz or 60 kHz carrier wave. The received long standard wave is amplified by the amplifier 143 and filtered and tuned by the filter unit 141 having the plurality of piezoelectric vibrators 1.
The piezoelectric vibrator 1 according to this embodiment includes crystal vibrator portions 148 and 149 having resonance frequencies of 40 kHz and 60 kHz that are the same as the carrier frequency.

Further, the filtered signal having a predetermined frequency is detected and demodulated by the detection and rectification circuit 144.
Subsequently, the time code is taken out via the waveform shaping circuit 145 and counted by the CPU 146. The CPU 146 reads information such as the current year, accumulated date, day of the week, and time. The read information is reflected in the RTC 148, and accurate time information is displayed.
Since the carrier wave is 40 kHz or 60 kHz, the crystal vibrator portions 148 and 149 are preferably vibrators having the tuning fork type structure described above.

  In addition, although the above-mentioned description was shown in the example in Japan, the frequency of the long standard wave is different overseas. For example, in Germany, a standard radio wave of 77.5 KHz is used. Therefore, when the radio timepiece 140 that can be used overseas is incorporated in a portable device, the piezoelectric vibrator 1 having a frequency different from that in Japan is required.

  According to the radio-controlled timepiece 140 of this embodiment, since the low-cost piezoelectric vibrator 1 is provided, the cost can be reduced.

The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, in the above embodiment, the bonding film 35 is formed on the lid substrate wafer 50, but conversely, the bonding film 35 may be formed on the inner surface 40 a of the base substrate wafer 40. In this case, it is preferable that the lead electrodes 36 and 37 and the bonding film 35 be formed only on the bonding surface of the base substrate wafer 40 with the lid substrate wafer 50 so that the lead electrodes 36 and 37 do not contact with each other.

In the above-described embodiment, the base substrate wafer 40 is swung around the swing axis O parallel to the inner surface 40a of the base substrate wafer 40 and the base substrate is moved in the swing axis O direction during the housing arrangement step S32B. Although the housing 9 is moved on the inner surface 40a of the base substrate wafer 40 by vibrating the wafer 40, the present invention is not limited to this.
In the above embodiment, the suction of the housing 9 from the outer surface 40b side is intermittently repeated during the housing arrangement step S32B. However, the present invention is not limited to this.

  Moreover, in the said embodiment, although the filler filled in the through-holes 30 and 31 shall be the said paste-like glass frit, it is not restricted to this. For example, a conductive paste (for example, a silver paste) may be used.

In the above embodiment, the piezoelectric vibrator 1 is manufactured by enclosing the piezoelectric vibrating reed 4 inside the package 5 while using the package manufacturing method according to the present invention. However, the piezoelectric vibrating reed 4 inside the package 5 is manufactured. It is also possible to manufacture devices other than piezoelectric vibrators by enclosing other electronic components.
Further, in the above-described embodiment, the case where the present invention is applied to the two-layer structure type piezoelectric vibrator 1 in which the cavity C is formed between the base substrate 2 and the lid substrate 3 has been described. May be applied to a three-layer structure type piezoelectric vibrator in which a base substrate and a lid substrate are joined so as to be sandwiched from above and below.

  In addition, it is possible to appropriately replace the constituent elements in the embodiment with known constituent elements without departing from the spirit of the present invention, and the above-described modified examples may be appropriately combined.

1 Piezoelectric vibrator 2 Base substrate (first substrate)
3 Lid substrate (substrate)
4 Piezoelectric vibrating piece (electronic component)
7 Core material part 8 Base part 9 Housing 30, 31 Through hole 32, 33 Through electrode 40 Base substrate wafer (first substrate)
40a Inner surface (first surface)
40b Outer surface (second surface)
110 Oscillator 120 Portable information device (electronic device)
140 radio clock C cavity

Claims (7)

A method of manufacturing a package in which an electronic component can be enclosed in a cavity formed between a plurality of substrates bonded together,
A through electrode forming step of forming a through electrode that penetrates the first substrate in the thickness direction among the plurality of substrates and electrically connects the inside of the cavity and the outside of the package;
The through electrode forming step includes:
A through hole forming step of forming a through hole in the first substrate;
A housing arrangement step of inserting the core portion of a conductive housing comprising a flat base portion and a core portion standing on the surface of the base portion into the through hole,
Have
During the through hole forming step, the through hole is formed in a reverse taper shape that gradually increases in diameter from the first surface side of the first substrate toward the second surface side opposite to the first surface;
During the housing arrangement step, the housing is moved from the second surface side through the through-hole while moving the housing on the first surface with the first surface of the first substrate facing upward. The package manufacturing method, wherein the core member is inserted into the through hole by suction. A method of manufacturing a package according to claim 1,
During the housing arrangement step, the first substrate is swung around a swing axis parallel to the first surface of the first substrate, and the first substrate is vibrated in the swing axis direction. A method for manufacturing a package, wherein the casing is moved on the first surface of the first substrate. A method of manufacturing a package according to claim 1 or 2,
In the case of the housing arrangement process, the suction of the housing from the second surface side is intermittently repeated.   4. A step of performing the package manufacturing method according to claim 1, and a step of disposing the piezoelectric vibrating piece as the electronic component inside the cavity while being mounted on the through electrode. A method of manufacturing a piezoelectric vibrator.   An oscillator, wherein the piezoelectric vibrator manufactured by the method according to claim 4 is electrically connected to an integrated circuit as an oscillator.   5. An electronic apparatus, wherein the piezoelectric vibrator manufactured by the method according to claim 4 is electrically connected to a time measuring unit.   A radio-controlled timepiece, wherein the piezoelectric vibrator manufactured by the method according to claim 4 is electrically connected to a filter portion.

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