JP2011192935A - Metal deposition film capacitor and method for manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a metal deposition film capacitor capable of preventing the electrostatic capacity from attenuating, and to provide a method for manufacturing the capacitor. <P>SOLUTION: A metal deposition film capacitor 1 includes, on at least a metallized contact surface 3 of a capacitor element 2, a sealing layer 7 which is coated or sealed in a vacuum environment. The capacitor further includes a sealing layer composed of a first sealing layer that is provided on the metallized contact surface of the capacitor element 2 and has at least a stress-relaxing function and a second sealing layer that is formed on a surface of the first sealing layer and reinforces the mechanical strength of the first sealing layer. By configuring the metal deposition film capacitor in this way, when the capacitor is used in a lighting circuit, or the like, of a flash lamp, even in tens of thousands of charging and discharging cycles, a dielectric barrier electric discharge generated between the metal deposition films of the capacitor element formed by wounding a metal deposition film arranged inside the metal deposition film capacitor is suppressed, and thus the electrostatic capacitance can be prevented from attenuating. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a metal vapor deposited film capacitor and a method for manufacturing the same. More particularly, the present invention relates to a metal vapor deposition film capacitor that prevents deterioration of a metal vapor deposition film capacitor used for charging and discharging a charge applied to the flash lamp in a flash lamp lighting device, and a manufacturing method thereof.

  Flash lamps are widely used in semiconductor heating processes, DVD bonding processes, and the like. The flash lamp realizes strong light emission by applying a high voltage across the electrodes and flowing a large current in a short time. When lighting such a flash lamp, a high voltage capacitor capable of accumulating a large amount of charge is incorporated in the lighting circuit. As a capacitor for high voltage, as represented by an oil capacitor, the capacitor is housed in a container of insulating oil and the whole is immersed in oil so that it can withstand high voltage.

  However, when oil is used as an insulating material, development for using a metal-deposited film capacitor at a high voltage has been progressing in recent years for reasons such as an increase in weight and an increase in shape. For example, Patent Literature 1 is known as a technique related to such a metal vapor deposition film capacitor.

  As shown in FIG. 6, the metal vapor deposition film capacitor disclosed in Patent Document 1 includes a capacitor element 101, a lead wire 103 taken out from the metallicon 102 side of the capacitor element 101, and a case 104 surrounding the capacitor element 101. Has been. In addition, the capacitor element 101 is formed by metal spraying on a base part 105 prepared by winding a resin film with a metal foil film on which a metal foil film is vapor-deposited around a winding core or the like, and both substantially circular end faces of the base part 105. And a base electrode formed on the metallicon 102. Moreover, the resin film with a metal foil film which comprises the base | substrate part 105 vapor-deposits a metal foil film by vacuum evaporation etc. on one surface of resin films, such as a polyethylene terephthalate (PET) and a polypropylene (PP). An insulating part not deposited with metal is provided on one long side of the surface on which the metal is deposited. Two such resin films with a metal foil film are overlapped and wound around a core such that the vapor deposition surface of the first metal foil film faces the non-vapor deposition surface of the second sheet. At this time, the insulating portions formed on the metal-deposited surface are arranged in different directions (for example, long sides facing each other) of the two resin films.

JP-A-8-45775 JP 2004-342379 A

  By the way, when a conventional metal vapor deposition film capacitor is used at a high voltage, alternating current, and pulse, a dielectric barrier discharge occurs in the gap between the metal vapor deposition films in a capacitor element that is stacked by winding the metal vapor deposition film or the like. There is a case. In particular, when incorporated in a flash lamp lighting device, the number of times of charge and discharge of a metal vapor deposited film capacitor (capacitors C1, C2,. When a dielectric barrier discharge occurs at each charge / discharge, the metal deposition surface formed on the resin film is oxidized by the dielectric barrier discharge, or by ozone generated by the ultraviolet rays generated by the dielectric barrier discharge. As a result, the area where the metal deposition film is formed gradually decreases. In connection with this, the problem that the electrostatic capacitance of a metal vapor deposition film capacitor fell occurred.

  In view of the above problems, an object of the present invention is to provide a metal-deposited film capacitor and a method for manufacturing the same, which can prevent the capacitance from being attenuated. Specifically, in a metal vapor deposition film capacitor used for a flash lamp lighting circuit, etc., a capacitor formed by winding a metal vapor deposition film disposed inside the metal vapor deposition film capacitor even by repeated charge and discharge such as tens of thousands of times Capacitance attenuation is prevented by suppressing dielectric barrier discharge generated between the metal vapor deposition films of the element and suppressing corrosion (hereinafter referred to as corrosion) due to electrochemical action on the metal vapor deposition film. An object of the present invention is to provide a metal vapor deposited film capacitor and a method for manufacturing the same.

The present invention employs the following means in order to solve the above problems.
The first means is a metal-deposited film capacitor having a capacitor element provided with a sealing layer coated or sealed in a vacuum environment on at least a metallicon surface.
The second means includes a first sealing layer having a stress relaxation function on the surface of the metallicon, and a mechanical strength of the first sealing layer formed on the surface of the first sealing layer. It has a capacitor | condenser element provided with the sealing layer which consists of a 2nd sealing layer which reinforces this, It is a metal vapor deposition film capacitor characterized by the above-mentioned.
A third means is a method for manufacturing a metal vapor-deposited film capacitor according to the first means or the second means, wherein a step of winding a pair of metal vapor-deposited films over and winding is performed. A process of spraying metal on both end faces of the metal vapor-deposited film to provide a metallicon; a process of providing a base electrode on the metallicon face; A step of providing a sealing layer, a step of exhausting air in the wound metal vapor-deposited film from the other metallicon surface excluding the surface on which the base electrode is provided, and at least a surface on which the base electrode is provided And a step of providing a sealing layer on the other metallicon surface excluding, and producing a capacitor element.
A fourth means is a method for producing a metal vapor deposited film capacitor according to the first means or the second means, wherein the metal vapor deposited film capacitor is wound around a pair of metal vapor deposited films. The step of spraying metal on both end faces of the metal vapor-deposited film to provide a metallicon, the step of providing a base electrode on the metallicon surface, and at least excluding the surface on which the base electrode is provided, A capacitor element is produced by exhausting air in the wound metal vapor-deposited film and at least providing a sealing layer on one and the other metallicon surfaces excluding the surface provided with the base electrode. A method for producing a metal-deposited film capacitor.

According to the first aspect of the present invention, since the sealing layer for preventing the ingress of oxygen is provided on the metallicon surface of the capacitor element constituting the metal vapor deposited film capacitor, the two layers forming the capacitor element are overlapped. This prevents the occurrence of dielectric barrier discharge between the deposited metal films and the corrosion caused by the presence of gas and moisture between the deposited metal films. As a result, the metal surface of the deposited metal film is oxidized and electrostatic discharge occurs. It is possible to prevent the capacity from decreasing. Furthermore, the ozone generated by the ultraviolet rays generated by the dielectric barrier discharge and the oxygen remaining in the capacitor element prevents the metal vapor deposition film from being oxidized and deteriorated, and as a result, the capacitance is prevented from lowering. Can do.
According to the second aspect of the present invention, the first sealing layer having a stress relaxation function on the surface of the metallicon of the capacitor element constituting the metal-deposited film capacitor, and the surface of the first sealing layer The second sealing layer that reinforces the mechanical strength of the first sealing layer formed on the second sealing layer is provided, so that it absorbs the difference in thermal expansion during use that occurs with the metallicon. In addition, the first sealing layer can enter the porous surface of the metallicon and can reliably block outside air.
According to the third aspect of the present invention, one metallicon surface on one end surface of the capacitor element is sealed with a resin-based sealing layer, and the metallized surface between the other metallicon surface on the other end surface of the capacitor element is between The dielectric barrier discharge does not occur inside the capacitor element by providing a resin-based sealing layer so that oxygen does not enter the metallicon surface from which the air has been exhausted, and then the air is exhausted. Metal vapor deposited film capacitors can be manufactured.
According to the fourth aspect of the present invention, the air remaining between the metal vapor deposition films is exhausted from both metallicon surfaces on both end faces of the capacitor element, and then oxygen is present on both metallicon surfaces from which the air has been exhausted. By providing a resin-based sealing film so as not to enter, a metal-deposited film capacitor in which no dielectric barrier discharge is generated inside the capacitor element can be manufactured.

It is sectional drawing which shows schematic structure of the metal vapor deposition film capacitor which has arrange | positioned one capacitor | condenser element which concerns on 1st Embodiment inside, and sectional drawing which expanded and showed the structure of one metallicon vicinity. It is a figure which shows the structure of the capacitor | condenser element arrange | positioned so that the vertical position of the base electrode formed in the both end surfaces of a capacitor | condenser element may be shifted. It is a figure which shows the manufacturing process which concerns on the manufacturing method of a capacitor | condenser element. It is a figure which shows the manufacturing process which concerns on the manufacturing method different from FIG. 3 of a capacitor | condenser element. It is sectional drawing which expanded and showed the structure of one metallicon vicinity among the metallicons provided in the both end surfaces of the capacitor | condenser element which concerns on 2nd Embodiment. It is a figure which shows the structure of the metal vapor deposition film capacitor based on a prior art.

First, the outline of the present invention will be described. The metal-deposited film capacitor of the present invention is a dielectric barrier discharge generated between two metal-deposited films by providing a resin-type sealing layer coated or sealed in a vacuum environment on the upper surface of the metallicon of the capacitor element. And, it is intended to prevent the capacitance from being attenuated by suppressing the corrosion.
Further, the present invention provides a manufacturing method for preventing a dielectric barrier discharge itself generated between the metal vapor deposition films, including a step of exhausting air remaining between the metal vapor deposition films of the capacitor element.

Next, a first embodiment of the present invention will be described with reference to FIGS.
FIG. 1A is a cross-sectional view showing a schematic configuration of a metal vapor-deposited film capacitor 1 in which one capacitor element 2 according to the present embodiment is arranged, and FIG. 1B is a cross-sectional view of FIG. It is sectional drawing which expanded and showed the structure of one metallicon 3 vicinity among the metallicons 3 formed in the both end surfaces of the capacitor | condenser element 2 shown.
As shown in FIG. 1 (a), a metal vapor deposited film capacitor 1 includes a capacitor element 2 inside, and metallicons 3 formed by metal spraying are provided on both end faces of the capacitor element 2. A lead wire 4 is connected to the metallicon 3. The capacitor element 2 and the lead wire 4 are housed in a case 5 to form a metal vapor deposited film capacitor 1.
Further, as shown in FIG. 1B, a base electrode 6 is formed on the surfaces of the metallicon 3 formed on both end surfaces of the capacitor element 2, and air flows into the entire surface of the metallicon 3 excluding the base electrode 6. As a sealing film for preventing, for example, a sealing layer 7 made of silicone resin is provided.
Here, as an example of specific numerical values of the capacitor element 2, the thickness of the metallicon 3 is 0.5 mm to 5 mm, and the thickness of the sealing layer 7 is several tens μ to several mm, preferably 2 mm ± 1 mm. It is.

  According to the metal vapor deposition film capacitor 1 shown in FIGS. 1 (a) and 1 (b), the capacitor element 2 has the sealing layer 7 in a state in which the air that has entered the gap between the metal vapor deposition films sandwiched between the metallicons 3 is exhausted. In other words, the sealing layer 7 is covered or sealed in a vacuum environment, and hermeticity is maintained by the sealing layer 7. As described above, since the air that has entered between the metal vapor deposition films is exhausted, the occurrence of dielectric barrier discharge between the metal vapor deposition films can be prevented. Furthermore, since the oxygen concentration remaining in the capacitor element 2 is reduced, generation of ozone is prevented, the metal vapor deposition film is oxidized, and the capacitance is reduced.

  In this embodiment, the case where a silicone resin is used as the sealing layer 7 has been described. However, as a material constituting the sealing layer 7, polyurethane, Teflon (registered trademark) resin, epoxy resin, acrylic Various materials such as a resin and a fluorine resin can be employed.

  In addition, the base electrode 6 may be made of a punch metal or a net-like member so that air immediately below the electrode can be easily exhausted in the manufacturing process of FIGS. 3G and 4F described later. . Furthermore, as shown in FIG. 2, the upper and lower positions of the base electrodes 6 formed on both end faces of the capacitor element 2 may be shifted so as to facilitate exhausting from between the metal vapor deposition films of the capacitor element 2.

FIG. 3 is a diagram illustrating a manufacturing process (FIGS. 3A to 3H) according to the method for manufacturing a capacitor element according to the present embodiment.
First, in the process shown in FIG. 3A, for example, aluminum is vacuum-deposited on the resin film 8 made of PP resin as the metal deposition surface 9. At this time, in the vicinity of one side on the long side of the resin film 8, an insulating portion 10 on which no metal is deposited is provided.

  Next, in the process shown in FIG. 3B, the direction in which the resin film 11 and the resin film 8 produced in the same manner as the resin film 8 are overlapped is shown, and the two resin films 8 and 11 to be stacked are shown. Are arranged such that the metal vapor-deposited surface 9 of one resin film 8 faces the non-vapor-deposited surface where the metal vapor-deposited surface 12 of the other resin film 11 is not formed. Further, the insulating portions 10 and 13 of the resin films 8 and 11 are arranged at positions where they do not overlap. Specifically, one insulating portion 10 is disposed on the upper long side of the resin film 8, and the insulating portion 13 of the other resin film 11 is disposed on the lower long side of the resin film 11.

  Next, in the step shown in FIG. 3C, the two resin films 8 and 11 are overlapped and wound to form a base body of a cylindrical capacitor element.

  Next, in the step shown in FIG. 3 (d), metallicons 15 and 16 are formed by metal spraying on both upper and lower end surfaces of the substantially circular base 14 made of the wound resin films 8 and 11.

  Next, in the step shown in FIG. 3E, base electrodes 17 and 18 are formed on the surfaces of the metallicons 15 and 16 formed by metal spraying. For the base electrodes 17 and 18, for example, copper plated with nickel is used.

  Next, in the step shown in FIG. 3F, the sealing layer 19 is provided on one metallicon 16 surface.

  Next, in the step shown in FIG. 3G, the sealing cap 20 is attached on the metallicon 15 of the base 14. Airtightness is maintained using an O-ring 21 for attachment. Next, the air in the base 14 is exhausted from the metallicon 15 side. At the time of evacuation, a vacuum pump (not shown) is connected to the tip of the check valve 22 attached to the sealing cap 20 for evacuation.

  Next, in the step shown in FIG. 3 (h), after exhausting the air in the base 14, silicone resin is introduced from the inlet valve 23 of the sealing cap 20, and the sealing layer 24 is formed on the metallicon 15. Provide. In this way, the cylindrical capacitor element 25 is manufactured.

FIG. 4 is a view showing a manufacturing process (FIGS. 4A to 4H) according to another manufacturing method different from FIG. 3 of the capacitor element according to the present embodiment.
The steps from FIG. 4A to FIG. 4E are the same as the steps from FIG. 3A to FIG.

  In the step shown in FIG. 4 (f), the sealing caps 20 and 26 are attached on the metallicons 15 and 16 of the base 14. Airtightness is maintained using O-rings 21 and 27 for attachment. Next, the air in the base 14 is exhausted from both sides of the metallicons 15 and 16. At the time of evacuation, a vacuum pump (not shown) is connected to the ends of the check valves 22 and 28 attached to the sealing caps 20 and 26 to evacuate.

  Next, in the step shown in FIG. 4G, after exhausting the air in the base 14, silicone resin is introduced from the inlet valves 23 and 29 of the sealing caps 20 and 26, and the metallicon 15 and 16 surfaces. Sealing layers 19 and 24 are provided thereon. In this way, the cylindrical capacitor element 25 is manufactured.

  3 (g) and FIG. 4 (f), an oxygen adsorbent such as Ni or Fe is disposed in the sealing caps 20 and 26, and added to the exhaust from the metallicons 15 and 16. The remaining oxygen in the air may be adsorbed and eliminated.

Next, a second embodiment of the present invention will be described with reference to FIG.
FIG. 5A is a cross-sectional view showing, in an enlarged manner, the configuration in the vicinity of one metallicon 3 among the metallicons 3 provided on both end faces of the capacitor element 2 according to this embodiment.
As shown in the figure, similarly to the first embodiment, aluminum and iron are formed at a certain ratio on a substantially circular end surface formed by winding a metal vapor-deposited film obtained by vapor-depositing a metal on one surface of a resin film. Thermally sprayed metallicon 3 is formed. On the metallicon 3, the stress generated between the metallicon 3 and a second sealing layer 71 described later is relaxed on the entire surface of the metallicon 3 excluding the base electrode 6 and nickel-plated copper. For example, a first sealing layer 30 made of silicone gel and having a stress relaxation function is provided. Further, silicone resin or the like is formed on the entire surface of the base electrode 6 and the first sealing layer 30 having a stress relaxation function. A second sealing layer 71 formed of Teflon (registered trademark) resin is provided. According to the capacitor element 2 of the present embodiment, instead of the sealing layer 7 shown in FIG. 1, the first sealing layer 30 having a stress relieving function that is high in heat absorption and is not cured, made of silicone gel, Since the second sealing layer 71 that covers the first sealing layer 30, maintains the shape of the first sealing layer 30, and reinforces the mechanical strength is formed, it occurs between the metallicon 3. The difference in thermal expansion during use can be absorbed. Furthermore, the first sealing layer 30 has an effect that it can enter the porous surface of the metallicon 3 and can reliably block outside air.
In addition to the silicone gel, the first sealing layer 30 may be a sol-gel resin or gel. Further, the first sealing layer 30 may be made of powder such as titania, boron, magnesium oxide, or nanoparticulate carbon powder in order to enter the porous surface of the metallicon 3 and maintain airtightness. Furthermore, a polymer coat, a glass coat, or the like may be used.
Here, when the example of the concrete numerical value of the capacitor | condenser element 2 is given, the thickness of the metallicon 3 is 0.5 mm-5 mm. Further, the thickness of the first sealing layer 30 is several hundred μ to several tens mm, preferably 0.5 mm. The thickness of the second sealing layer 71 is several tens of μ to several mm, preferably 0.5 mm.

  FIG. 5B shows an example in which an impregnated layer 31 is provided around the capacitor element 2 in addition to the configuration of the capacitor element 2 shown in FIG. For the impregnated layer 31, for example, varnish is used. The impregnated layer 31 has a moisture absorption preventing function and can prevent a decrease in pressure resistance due to moisture absorption of the capacitor element 2.

DESCRIPTION OF SYMBOLS 1 Metal vapor deposition film capacitor 2 Capacitor element 3 Metallicon 4 Lead wire 5 Case 6 Base electrode 7 Sealing layer 71 Second sealing layer 8, 11 Resin film 9, 12 Metal vapor deposition surface 10, 13 Insulating part 14 Bases 15, 16 Metallicon 17, 18 Base electrode 19, 24 Sealing layer 20, 26 Sealing cap 21, 27 O-ring 22, 28 Check valve 23, 29 Inlet valve 25 Capacitor element 30 First sealing layer 31 Impregnated layer

Claims (4)

  A metal-deposited film capacitor comprising a capacitor element provided with a sealing layer that is coated or sealed in a vacuum environment on at least a metallicon surface.   A first sealing layer having a stress relaxation function on the surface of the metallicon, and a second reinforcing the mechanical strength of the first sealing layer formed on the surface of the first sealing layer. A metal vapor deposition film capacitor comprising a capacitor element provided with a sealing layer comprising a sealing layer. It is a manufacturing method of the metal vapor deposition film capacitor of Claim 1 or Claim 2, Comprising:
A step of stacking and winding a pair of metal vapor deposition films;
A step of thermally spraying metal on both end surfaces of the wound metal vapor-deposited film to provide a metallicon;
Providing a base electrode on the metallicon surface;
At least a step of providing a resin-based sealing layer on one metallicon surface excluding the surface on which the base electrode is provided;
Exhausting the air in the wound metal vapor-deposited film from the other metallicon surface excluding the surface provided with the base electrode;
At least a step of providing a sealing layer on the other metallicon surface excluding the surface on which the base electrode is provided;
A method for producing a metal-deposited film capacitor, comprising producing a capacitor element by: It is a manufacturing method of the metal vapor deposition film capacitor of Claim 1 or Claim 2, Comprising:
A step of stacking and winding a pair of metal vapor deposition films;
A step of thermally spraying metal on both end surfaces of the wound metal vapor-deposited film to provide a metallicon;
Providing a base electrode on the metallicon surface;
Exhausting the air in the wound metal vapor-deposited film from one and the other metallicon surfaces, excluding at least the surface on which the base electrode is provided; and
At least a step of providing a sealing layer on one and the other metallicon surfaces excluding the surface on which the base electrode is provided;
A method for producing a metal-deposited film capacitor, comprising producing a capacitor element by: