JP2011192853A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To achieve a semiconductor device equipped with a small and high-performance passive element. <P>SOLUTION: An insulating substrate 11 formed thereon with a passive element such as an inductor 13 is uniformly laminated on a semiconductor substrate 21 formed thereon with a second circuit 22 electrically connected to a first circuit 12 to form the semiconductor device 10. This reduces a parasitic capacitance between wiring of the passive element and the substrate and reduces an interference by the wiring, thereby improving performance of the passive element. Because the reduction in the interference can reduce an interval between adjacent wirings and thereby a footprint of the inductor 13 serving as a component of an antenna can be reduced, the semiconductor device 10 can be reduced in size. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

The present invention relates to a semiconductor device formed by stacking an insulating substrate and a semiconductor substrate.

Conventionally, a semiconductor device such as an LC resonance circuit antenna has been manufactured by forming various passive elements and active elements on a semiconductor substrate such as a silicon substrate.
For example, Patent Document 1 discloses a semiconductor device including an antenna in which an inductor is formed as a passive element on a silicon substrate.

Japanese Patent Laid-Open No. 2004-22667

However, when the passive element is formed on the semiconductor substrate, the parasitic capacitance between the metal wiring forming the passive element and the substrate is large, and it is difficult to reduce the mutual interference between the wiring. It was not possible to obtain. In addition, since the interval between adjacent wirings cannot be reduced in order to avoid the influence of mutual interference, the area occupied by the passive elements is increased, which has been an obstacle to downsizing of the semiconductor device.

Accordingly, an object of the present invention is to realize a semiconductor device including a passive element having a small size and high performance.

In order to achieve the above object, according to the first aspect of the present invention, in the semiconductor device according to the first aspect, a first circuit including a passive element formed on a substrate surface or a recess provided in the substrate is formed. A technical means is used in which an insulating substrate and a semiconductor substrate including a semiconductor element and having a second circuit electrically connected to the first circuit are stacked and formed integrally. .

According to the invention described in claim 1, since the passive element is formed on the insulating substrate, the parasitic capacitance between the wiring and the substrate can be reduced. In addition, since the space between the wirings is an insulator and the capacitance is small and the resistance is high, mutual interference between the wirings can be reduced. As a result, the performance of the passive element can be improved.
Further, since mutual interference can be reduced, the interval between adjacent wirings can be narrowed, and the area occupied by the passive elements can be reduced.
In addition, since this insulating substrate is laminated with a semiconductor substrate on which a second circuit that includes a semiconductor element and is electrically connected to the first circuit is formed, a semiconductor device is integrally formed. Thus, a semiconductor device including a passive element with high performance can be realized.

According to a second aspect of the present invention, in the semiconductor device according to the first aspect, the technical means is used in which the insulating substrate is a substrate made of any one of a glass material, a ceramic material, and a resin material.

As in the second aspect of the present invention, a glass material, a ceramic material, or a resin material can be adopted as the material constituting the insulating substrate.

According to a third aspect of the present invention, in the semiconductor device according to the first or second aspect, the first circuit includes at least one of a resistor, a capacitor, and an inductor as a passive element. Use means.

As in the third aspect of the present invention, for example, an antenna or the like can be configured by the first circuit including at least one of a resistor, a capacitor, and an inductor.

According to a fourth aspect of the present invention, in the semiconductor device according to any one of the first to third aspects, a technical means is used in which the first circuit includes an active element.

As in the fourth aspect of the present invention, a configuration in which the first circuit includes an active element can be employed. Thereby, the freedom degree of arrangement | positioning of an element can be increased, for example, a semiconductor device can be reduced in size.

According to a fifth aspect of the present invention, in the semiconductor device according to any one of the first to fourth aspects, a recess is formed on at least one of the substrate surface of the insulating substrate and the substrate surface of the semiconductor substrate. Further, a technical means is used in which at least one of the first circuit and the second circuit is sealed in a space formed in the recess by stacking the insulating substrate and the semiconductor substrate.

According to the fifth aspect of the present invention, at least one of the first circuit and the second circuit can be sealed in a space formed by the semiconductor substrate and the recess of the insulating substrate. Thereby, an element can be protected from the load of external force and a deterioration environment.

According to a sixth aspect of the present invention, in the semiconductor device according to the fifth aspect, a MEMS (Micro Electro Mechanical Systems) is formed on the semiconductor substrate, and the MEMS is disposed in the space. The technical means is used.

Generally, since the MEMS is sealed in a semiconductor device so as to be shielded from the external environment, the invention according to claim 5 is a semiconductor including the MEMS. It can be particularly suitably used for an apparatus.

According to a seventh aspect of the present invention, in the semiconductor device according to any one of the first to sixth aspects, a technical means is used in which the insulating substrate includes a plurality of the first circuits. .

As in the seventh aspect of the invention, the semiconductor substrate can be multi-functionalized and characteristics can be improved by adopting a configuration in which the insulating substrate includes a plurality of first circuits. For example, when a plurality of relays and antennas are formed in a semiconductor device, transmission is performed by changing the frequency for each antenna to use in a wide band, switching the antenna to be used according to the transmission direction, or operating multiple antennas at the same time. Electric power can be increased.

It is explanatory drawing which shows the structure of the semiconductor device of 1st Embodiment. 1A is an explanatory plan view, and FIG. 1B is a cross-sectional view taken along the line AA in FIG. 1A. It is a figure which shows the result of having plotted S11 on the Smith chart in order to evaluate the high frequency characteristic of the inductor of the semiconductor device of 1st Embodiment. It is a figure which shows the result of having evaluated the high frequency characteristic of the inductor of the semiconductor device of 1st Embodiment by Q value. It is sectional explanatory drawing which shows the structure of the semiconductor device of 2nd Embodiment. It is sectional explanatory drawing which shows the manufacturing method of the semiconductor device (insulating board | substrate part) of 2nd Embodiment. It is sectional explanatory drawing which shows the manufacturing method of the semiconductor device of 2nd Embodiment. It is sectional explanatory drawing which shows the example of a change of the semiconductor device of 2nd Embodiment. It is sectional explanatory drawing which shows the structure of the semiconductor device of 3rd Embodiment. FIG. 9 is a schematic diagram illustrating an example of a method for manufacturing the semiconductor device illustrated in FIGS. 7 and 8.

[First Embodiment]
As a first embodiment of the present invention, an example in which an inductor is formed on the surface of an insulating substrate will be described with reference to the drawings.

As shown in FIG. 1, the semiconductor device 10 of the first embodiment includes an insulating substrate 11 on which a first circuit 12 including an inductor 13 that is a passive element is formed, and a semiconductor element 23. And a semiconductor substrate 21 formed with a second circuit 22 electrically connected to each other.

As the insulating substrate 11, a ceramic substrate made of alumina, aluminum nitride, silicon nitride, silicon carbide, zirconium oxide or the like, a glass substrate made of borosilicate glass, lead glass, soda glass or the like, a resin made of polyimide, glass epoxy, or the like. A substrate or the like is used.

The inductor 13 is formed on the surface 11a of the insulating substrate 11 by the metal wiring 14 through a process described later. FIG. 1 shows an example in which a spiral inductor is used as the inductor 13. The metal wiring 14 forming the inductor 13 is formed of Cu, Al, Au, Ag, Pd, Sn, Ni, Zn or the like with a width of 50 to 200 μm, for example, using a known method. Here, the metal wiring 14 can also be formed as a thick film having an aspect ratio of 1 or more with respect to the width.

The inductor 13 includes a spiral portion 13a and two ports 13b and 13c. A terminal end 13d of the spiral portion 13a is connected to a port 13b via a through electrode 13e, a back surface wiring 13f formed on the back surface 11b, and the through electrode 13g. It is connected to the.

For example, the second circuit 22 including an active element such as a transistor or a diode as the semiconductor element 23 is formed on the surface 21a of the semiconductor substrate 21 made of Si or the like by a known method. The second circuit 22 is electrically connected to the first circuit 12 via a conductor (not shown) such as a through electrode or external wiring. Thereby, the semiconductor device 10 can be configured as an antenna in which the inductor 13 is formed on the insulating substrate 11 by the metal wiring 14.

Since the inductor 13 is formed on the insulating substrate 11, the parasitic capacitance between the wiring and the substrate can be reduced. In addition, since the space between the metal wirings 14 is an insulator and the capacitance is small and the resistance is high, mutual interference of the metal wirings 14 can be reduced. As a result, the characteristics of the L component of the antenna can be improved, so that the Q value (Quality Factor) of the antenna can be increased. Further, since the mutual interference can be reduced, the interval between the adjacent metal wirings 14 can be narrowed, and the area occupied by the inductor 13 as a component of the antenna can be reduced, so that the antenna can be downsized. be able to. As the shape of the inductor 13, a loop, meander, or batch shape may be employed.

The above-described inductor 13 can be formed by the following process, for example.

The insulating substrate 11 was an aluminum nitride substrate having a 3 inch square and a plate thickness of 300 μm. A through hole and a recess for forming the inductor 13 were formed on the aluminum nitride substrate by drilling. The diameter of the formed through hole is 70 μm, the line width of the recess is 70 μm, and the depth is 80 μm.

Subsequently, an intermediate film was formed on the surface of the aluminum nitride substrate, the through holes, and the inner surfaces of the recesses by sputtering. Two intermediate films were formed, a Ti film was formed on the first layer formed on the aluminum nitride substrate, and a Cu film was formed on the second layer formed on the Ti film of the first layer. The film thickness of each layer was formed such that the Ti film was 50 nm and the Cu film was 500 nm on the inner surface of the through hole and the recess of the aluminum nitride substrate.

Subsequently, an ultraviolet curable film resist (thickness: 50 μm) for chemical plating was laminated on one surface of the aluminum nitride substrate, and openings were formed at positions corresponding to the through holes and the recesses by photolithography.

Then, the said board | substrate was fixed to the plating tank, and the through-hole and the recessed part were filled with Cu by electrolytic plating. The concentration of copper ions in the plating solution was 210 g / L in terms of the weight of copper sulfate pentahydrate. The temperature of the solution was 40 ° C., and the electroplating was performed while stirring the plating solution so that the Cu film was uniformly grown inside the through hole.

Subsequently, the resist and the Cu film protruding from the surface of the aluminum nitride substrate were ground and polished by polishing from both surfaces of the aluminum nitride substrate. A double-sided lapping machine was used for polishing, and the Cu film protruding from both sides of the aluminum nitride substrate was polished using a lapping solution containing alumina abrasive grains having an average particle size of 3 μm.

The high frequency characteristics of the inductor formed on the aluminum nitride substrate by the above-described process were compared with the high frequency characteristics of the inductor (conventional type) formed on the silicon substrate. The high frequency characteristics were evaluated by connecting a prober and a network analyzer. A GSG type three-terminal probe was used as a probe, and S11 was plotted on a Smith chart at 300 kHz to 3 GHz.

In the inductor formed on the conventional silicon substrate, the operating range as the inductor is 300 kHz to 833 MHz, whereas in the inductor formed on the aluminum nitride substrate, as shown in the S11 Smith chart characteristic of FIG. It operated as an inductor at a wider frequency of ˜2.7 GHz.

Next, as a result of evaluating the Q value at 300 kHz to 3 GHz, the Q value was 0.22 in the conventional inductor formed on the silicon substrate, whereas the inductor formed on the aluminum nitride substrate is shown in FIG. As shown, it was 2.45, which improved the characteristics by about one digit.

The expansion of the operating frequency range and the improvement of the Q value are considered to be the effect of reducing the parasitic capacitance between the wiring and the substrate by forming the inductor on the insulating substrate.

In addition, the formation method of a through-hole and a recessed part, and the formation method of an inductor are not limited to the above-mentioned method, A well-known method can be selected suitably and can be employ | adopted.

(Example of change)
In addition to the inductor 13, passive elements such as resistors and capacitors can be formed on the insulating substrate 11. Various functional elements can be produced by combining these passive elements with other active elements.

[Effect of the first embodiment]
Since the inductor 13 as a passive element is formed on the insulating substrate 11, the parasitic capacitance between the wiring and the substrate can be reduced. In addition, since the space between the metal wirings 14 is an insulator and the capacitance is small and the resistance is high, mutual interference of the metal wirings 14 can be reduced. As a result, the characteristics of the L component of the antenna can be improved, so that the Q value of the antenna can be increased. Further, since the mutual interference can be reduced, the interval between the adjacent metal wirings 14 can be narrowed, and the area occupied by the inductor 13 as a component of the antenna can be reduced, so that the antenna can be downsized. be able to.
Since the semiconductor device 10 is integrally formed by stacking the insulating substrate 11 and the semiconductor substrate 21 on which the second circuit 22 electrically connected to the first circuit 12 is formed, the size of the semiconductor device 10 is reduced. The semiconductor device 10 including a passive element with high performance can be realized.

[Second Embodiment]
As a second embodiment of the present invention, an example in which an LC resonance circuit type antenna including an inductor, a capacitor, and a metal wiring is formed on an insulating substrate will be described with reference to the drawings.

As shown in FIG. 4, the semiconductor device 30 of the second embodiment includes an insulating substrate 31 on which a first circuit 32 including an inductor 33, a capacitor 34, and a metal wiring 35 is formed, and a semiconductor element 43. A semiconductor substrate 41 on which a second circuit 42 electrically connected to the first circuit 32 is laminated and formed integrally.

As the insulating substrate 31, as in the insulating substrate 11 of the first embodiment, a ceramic substrate made of alumina, aluminum nitride, silicon nitride, silicon carbide, zirconium oxide or the like, glass made of borosilicate glass, lead glass, soda glass, or the like. A resin substrate made of a substrate, polyimide, glass epoxy, or the like is used. In this embodiment, in order to form a high-performance LC resonant circuit type antenna, it is preferable to use a glass substrate having a small capacity and high resistance.

For example, the inductor 33 is formed on the surface 31 a of the insulating substrate 31 through a process described later, and is connected to the through electrode 36. The inductor 33 is formed of Cu, Al, Au, Ag, Pd, Sn, Ni, Zn, or the like using a known method such as paste or sputtering or a cold spray method.

The capacitor 34 is connected to the inductor 33 or the like by a wiring (not shown), and is formed by sandwiching a dielectric film 34b between the metal electrode portions 34a and 34a. As the dielectric film 34b, a material having a high dielectric constant, for example, BaTiO ₃ is preferably used.

On the back surface 31 b of the insulating substrate 31, a metal wiring 35 electrically connected to the through electrode 36 and the through electrode 37 is formed. The inductor 33, the capacitor 34, and the metal wiring 35 constitute an LC resonance circuit type antenna.

A recess 41 b is formed on the surface 41 a of the semiconductor substrate 41, and the outer periphery is joined to the insulating substrate 31. Thus, a space A is formed surrounded by the back surface 31 b of the insulating substrate 31 and the front surface 41 a of the semiconductor substrate 41. A VCO (Voltage Controlled Oscillator) which is an active element is formed as the semiconductor element 43 in the recess 41b. The semiconductor element 43 is electrically connected to the first circuit 32 via the metal wiring 44.

With the above-described structure, the semiconductor device 30 can be configured as an LC resonance circuit antenna. The semiconductor device 30 can be formed by, for example, the following process.

As the insulating substrate 31, a glass substrate having a diameter of 4 inches and a thickness of 775 μm was used. As shown in FIG. 5A, a blasting ultraviolet curable film resist (thickness: 100 μm) was laminated on the entire surface of one side of the glass substrate, and an opening was formed in the resist 81 by photolithography. The opening 37 has a diameter of 500 μm at the through hole forming portion, a diameter of 250 μm at the forming portion of the capacitor 34, and a line width of the forming portion of the inductor 33 and the forming portion of the metal wiring is 100 μm.
It was.

Subsequently, abrasive grains were sprayed at high speed over the entire surface of the insulating substrate 31 by blasting to form a recess 31 c in the opening of the resist 81. As a result of blasting, the depth of the recess 31c is 505 μm for the formation part of the through electrodes 36 and 37, 310 μm for the formation part of the capacitor 34, 180 μm for the formation part of the inductor 33 and the formation part of the metal wiring.
It became.

Subsequently, an intermediate film (Al film: thickness 1000 nm) was formed on the inner surface of the recess 31c by sputtering. Subsequently, as shown in FIG. 5 (B), Cu was filled in the recess 31c by a cold spray method until the film thickness reached 150 μm. For Cu, pure copper powder having an average particle diameter of 5 μm produced by a water atomization method was used, and the powder supply amount was set to 30 g / min. The propellant gas used was helium heated to 300 ° C. A nozzle was installed at a position 30 mm away from the insulating substrate 31 and pure copper powder was sprayed at a speed of 470 m / sec to fill the recess 31 c with Cu until the film thickness reached 150 μm.

Subsequently, a φ4 inch, 2 mm thick metal mask provided with an opening having a diameter of 250 μm in the formation portion of the capacitor 34 was brought into close contact with the resist 81, and the dielectric film BaTiO ₃ of the capacitor 34 was formed by a cold spray method. As BaTiO ₃ , a powder having an average particle diameter of 0.4 μm prepared by a solid phase method was used, and a powder supply amount was set to 5 g / min. As the propelling gas, helium gas heated to 600 ° C. was used. A nozzle was installed at a position 30 mm away from the metal mask, and BaTiO ₃ powder was sprayed at a speed of 530 m / sec to form a thin film having a thickness of 1.6 μm on Cu. Subsequently, the metal mask was removed, and the recess 31c was completely filled with Cu.

Subsequently, as shown in FIG. 5C, the insulating substrate 31 was polished from both surfaces, and the Cu film protruding from the resist and the substrate surface was cut and planarized. Thereby, the inductor 33, the capacitor 34, and the through electrodes 36 and 37 were formed.

Subsequently, as shown in FIG. 6D, metal wiring 35 for connecting the through electrodes 36 and 37 to the back surface 31b of the insulating substrate 31 was formed by sputtering. As a result, the first circuit 32 including the LC resonance circuit type antenna was formed.

Subsequently, as shown in FIG. 6E, the insulating substrate 31 on which the LC resonant circuit antenna is formed and the semiconductor substrate 41 made of silicon on which the VCO 43 is formed are joined by anodic bonding, and the semiconductor device 30 is bonded. Produced.

The radio wave transmission characteristics of the semiconductor device 30 of the present invention and a conventional semiconductor device in which an LC resonance circuit type antenna and a VCO are formed on a silicon substrate were compared and evaluated. Evaluation of the radio wave transmission characteristics was performed in the anechoic chamber by connecting the semiconductor device 30 of the present invention on the transmitting side and connecting a standard dipole antenna and a spectrum analyzer on the receiving side.

As a result of evaluation at a frequency of 500 MHz with a distance between a standard dipole antenna and the semiconductor device being 3 m, the received power at a measurement distance of 3 m was −28 dBm in the conventional semiconductor device, whereas the semiconductor device of the present invention was Then, it improved to -50 dBm. Similar to the antenna of the first embodiment, it is considered that the parasitic capacitance between the wiring and the substrate is reduced by forming the inductor 33 on the insulating substrate 31.

(Example of change)
In the present embodiment, the capacitor 34 is formed on the insulating substrate 31. However, the present invention is not limited to this. For example, when the semiconductor element 43 is formed on the semiconductor substrate 41, the capacitor is formed at the same time and insulated through the through electrode. By connecting to the inductor 33 formed on the substrate 31, an LC resonance circuit type antenna can be formed. In addition, the capacitor 34 may be a comb-type structure. Further, the VCO is formed as the semiconductor element 43 on the semiconductor substrate 41. However, the present invention is not limited to this. For example, a power supply circuit, a sensor, and a signal processing circuit are formed to match the LC resonant circuit type antenna. Thus, a sensor terminal having a wireless communication function can be formed. Although the cold spray method is used to form the dielectric film 34b, the present invention is not limited to this. For example, the dielectric film 34b can also be formed using a sputtering method or the like. The element sealed in the space A may be either an element formed in the first circuit 32 or a semiconductor element 43.

A semiconductor device in which a MEMS as shown in FIG. 7 is formed can also be configured. The semiconductor device 60 is configured by electrically connecting a semiconductor substrate 50 having a movable portion 51 formed on a Si substrate in a cantilever shape on the surface and a glass circuit board 70. A concave portion is formed on the back side of the glass circuit substrate 70, and the outer peripheral portion is anodically bonded to the semiconductor substrate 50. The movable portion 51 is disposed in a space formed by the concave portion of the glass circuit board 70 and the semiconductor substrate 50. The through electrodes 56a and 56b are electrically connected to a semiconductor element (not shown) formed on the surface of the glass circuit board 70. The movable portion 51 is electrically connected to the through electrode 56 a through the wiring 52. A surface electrode 53 is formed at the surface end of the movable portion 51 on the glass circuit board 70 side. The wiring 52 and the surface electrode 53 are electrically connected by a wiring (not shown). On the back surface of the glass circuit board 70, a counter electrode 54 connected to the through electrode 56 b is formed at a position facing the front surface electrode 53. With the above-described configuration, the semiconductor device 60 acting as a relay is configured. According to this configuration, since the space in which the movable part 51 is arranged can be in a vacuum state, the responsiveness of the movable part 51 can also be improved.

For example, as shown in FIG. 9, the semiconductor device 60 includes a semiconductor substrate 50 on which a MEMS is formed, a glass circuit board 70 is bonded, the MEMS is sealed, and then dicing is performed to manufacture a chip. It can be manufactured by package technology. As a result, it is possible to form chips in a batch and to reduce manufacturing costs.

[Effects of Second Embodiment]
(1) Since the LC resonance circuit type antenna composed of the inductor 33, the capacitor 34, and the metal wiring 35 is formed on the insulating substrate 31, the parasitic capacitance between the wiring and the substrate can be reduced. Since the high frequency characteristics of the capacitor 34 can be improved, the power transmission characteristics can be improved in the semiconductor device 30 including the LC resonance circuit type antenna.

(2) Since the element or semiconductor element 43 formed in the first circuit 32 is sealed in the space A formed in the recess by stacking the insulating substrate 31 and the semiconductor substrate 41, the element is externally provided. Since it can be shielded from the environment, it is possible to protect the device from the load of external force and the deterioration environment.

[Third Embodiment]
As a third embodiment of the present invention, a configuration in which an insulating substrate includes a plurality of first circuits will be described. Here, an example in which an LC resonant circuit antenna including an inductor, a capacitor, and a metal wiring is formed on an insulating substrate, and a power source, a sensor, a signal processing circuit, and a MEMS relay are formed on a semiconductor substrate will be described with reference to the drawings.

As shown in FIG. 8, the semiconductor device 90 of the third embodiment includes an insulating substrate 92 on which two antennas 91a and 91b are formed, a power supply circuit 93, a sensor 94, and a signal processing circuit 95, and is not shown in the figure. A semiconductor substrate 98 electrically connected to the two MEMS relays 96a and 96b is laminated and integrally formed through wiring.

As the insulating substrate 92, similarly to the insulating substrate 11 of the first embodiment, a ceramic substrate made of alumina, aluminum nitride, silicon nitride, silicon carbide, zirconium oxide or the like, glass made of borosilicate glass, lead glass, soda glass, or the like. A resin substrate made of a substrate, polyimide, glass epoxy, or the like is used. In this embodiment, in order to form a high-performance LC resonant circuit type antenna, it is preferable to use a glass substrate having a small capacity and high resistance.

As in the second embodiment, the antenna 91 is formed of Cu, Al, Au, Ag, Pd, Sn, Ni, Zn, or the like using a known method such as paste or sputtering, or a cold spray method.

A recess is formed on the surface of the semiconductor substrate 98, and the outer periphery is joined to the insulating substrate 91. Thereby, a space B is formed surrounded by the back surface of the insulating substrate 92 and the front surface of the semiconductor substrate 98. A power supply circuit 93, a sensor 94, a signal processing circuit 95, and a relay 96 are formed in the recess, and these are electrically connected to each other through a metal wiring (not shown).

With the above-described structure, the semiconductor device 90 can be configured as a sensor terminal. The semiconductor device 90 can be formed by, for example, the following process.

The method for forming the antenna 91 and the through electrode 97 on the insulating substrate 92 was performed in the same manner as in the second embodiment.

Subsequently, the insulating substrate 92 on which the antenna was formed and the semiconductor substrate 98 made of silicon on which the power supply circuit 93, the sensor 94, and the signal processing circuit 95 were formed were joined by anodic bonding to manufacture the semiconductor device 90.

For example, as shown in FIG. 9, the semiconductor device 90 includes a semiconductor substrate 50 on which a MEMS is formed, a glass circuit board 70 is bonded, the MEMS is sealed, and then dicing is performed to manufacture a chip. It can be manufactured by package technology. As a result, it is possible to form chips in a batch and to reduce manufacturing costs.

[Effect of the third embodiment]
By adopting a configuration in which the insulating substrate includes a plurality of first circuits as in the present embodiment, the semiconductor device can be multi-functionalized and the characteristics can be improved. Here, an antenna is formed over an insulating substrate, a power supply circuit, a sensor, a signal processing circuit, a relay, and the like are formed over the semiconductor substrate, and these are joined to form a semiconductor device. Information sensed by the sensor is processed by a signal processing circuit and transmitted to a remote terminal through an antenna. At this time, the following effects can be obtained by forming a plurality of relays and antennas in the semiconductor device.

(1) It can be used in a wide band by changing the frequency for each antenna.

(2) The antenna to be used can be switched depending on the transmission direction.

(3) Further, the transmission power can be increased by operating a plurality of antennas simultaneously.

[Other Embodiments]
The active element can also be formed on an insulating substrate. Thereby, the freedom degree of arrangement | positioning of an element can be increased, for example, a semiconductor device can be reduced in size.

DESCRIPTION OF SYMBOLS 10 Semiconductor device 11 Insulating substrate 12 First circuit 13 Inductor 14 Metal wiring 21 Semiconductor substrate 22 Second circuit 23 Semiconductor element 30 Semiconductor device 31 Insulating substrate 32 First circuit 33 Inductor 34 Capacitor 35 Metal wiring 36 Through electrode 37 Through Electrode 41 Semiconductor substrate 42 Second circuit 43 Semiconductor element 44 Metal wiring 50 Semiconductor substrate 51 Movable portion 52 Wiring 53 Surface electrode 54 Counter electrode 56 Through electrode 60 Semiconductor device 70 Glass circuit substrate 81 Resist 90 Semiconductor device 91 Antenna 92 Insulating substrate 93 Power supply circuit 94 Sensor 95 Signal processing circuit 96 Relay 97 Through electrode 98 Semiconductor substrate A Space B Space

Claims (7)

An insulating substrate on which a first circuit including a passive element formed on a substrate surface or a recess provided on the substrate is formed;
A semiconductor device including a semiconductor element and a semiconductor substrate on which a second circuit electrically connected to the first circuit is formed and laminated. The semiconductor device according to claim 1, wherein the insulating substrate is a substrate made of any one of a glass material, a ceramic material, and a resin material. The semiconductor device according to claim 1, wherein the first circuit includes at least one of a resistor, a capacitor, and an inductor as a passive element. The semiconductor device according to claim 1, wherein the first circuit includes an active element. A recess is formed in at least one of the substrate surface of the insulating substrate or the substrate surface of the semiconductor substrate, and the first substrate is formed in the space formed in the recess by stacking the insulating substrate and the semiconductor substrate. 5. The semiconductor device according to claim 1, wherein at least one of the circuit and the second circuit is sealed. 6. A semiconductor device including at least one MEMS device or at least one MEMS device is formed on the semiconductor substrate, and the semiconductor device including at least one MEMS device or at least one MEMS device is disposed in the space. The semiconductor device according to claim 5. The semiconductor device according to claim 1, wherein the insulating substrate includes a plurality of the first circuits.

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