JP2011189597A - Manufacturing method of liquid jet head, liquid jet head and liquid jet apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To overcome the problem that an adhesive flows out of between a passage forming substrate and a sealing substrate before the adhesive is cured to form an adhesive layer between the passage forming substrate and the sealing substrate. <P>SOLUTION: The manufacturing method of the liquid jet head which has the passage forming substrate wherein an elastic film including a silicon oxide layer and pressure generating chambers communicating with nozzle openings for jetting liquid droplets are formed, and the sealing substrate which seals piezoelectric elements formed on the elastic film includes an adhesive application process S10 in which the adhesive of a polyamide resin is applied to a bonding surface to be an opening region of a mask pattern between a wafer for the passage forming substrate and a wafer for the sealing substrate, a first heating process S20 in which the adhesive is heated to a predetermined first temperature, a contact process S30 in which the mask pattern is removed and the wafer for the passage forming substrate and the wafer for the sealing substrate are made to contact to each other on the bonding surface via the adhesive, and a second heating process S40 in which the adhesive is heated to a predetermined second temperature. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a method of manufacturing a liquid ejecting head, a liquid ejecting head, and a liquid ejecting apparatus.

As a typical example of the liquid ejecting head, for example, a liquid ejecting head that ejects, for example, droplets of ink or the like from a plurality of nozzle openings constituting a nozzle row by using a pressure change in a pressure generating chamber due to displacement of a piezoelectric element It has been known. Specifically, a piezoelectric element is provided for each pressure generating chamber that communicates with one nozzle opening, and a voltage is selectively applied to the piezoelectric element to contract or expand the piezoelectric element, thereby adding pressure to the pressure generating chamber. Pressure and eject droplets from the nozzle openings.
The plurality of pressure generation chambers and the plurality of liquid flow paths communicating with the respective pressure generation chambers join one surface of the flow path forming substrate on which the partition walls are formed and a sealing substrate for sealing the piezoelectric element. The other surface of the flow path forming substrate is joined to the nozzle plate in which the nozzle openings are formed.
The flow path forming substrate and the sealing substrate are bonded by a thermosetting adhesive such as an epoxy resin, which forms an adhesive layer by heat curing (for example, Patent Document 1).

JP 2009-226756 A

  However, there is a problem that the adhesive flows out from between the flow path forming substrate and the sealing substrate before the adhesive is cured and an adhesive layer is formed between the flow path forming substrate and the sealing substrate. is there. The adhesive that has flowed out between the flow path forming substrate and the sealing substrate may adhere to the end surfaces of the flow path forming substrate and the sealing substrate, or may adhere to the surface where the nozzle plate of the flow path forming substrate is bonded. End up.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 Sealing a flow path forming substrate in which an elastic film including a silicon oxide layer and a pressure generation chamber communicating with a nozzle opening for ejecting droplets are formed, and a piezoelectric element formed on the elastic film. A sealing substrate, and a mask substrate comprising: a flow path forming substrate wafer serving as the flow path forming substrate; and a sealing substrate wafer serving as the sealing substrate. An adhesive application step of applying an adhesive, which is a polyamide-based resin, to the bonding surface that becomes the opening region, and a first heating for heating the adhesive applied to the bonding surface to a predetermined first temperature And a contact step of removing the mask pattern from the flow path forming substrate wafer and contacting the flow path forming substrate wafer and the sealing substrate wafer via the adhesive at the bonding surface; The adhesive while pressing the adhesive There method of manufacturing a liquid jet head which comprises a second heating step of heating to a predetermined second temperature.

  According to this configuration, in the first heating step, heating is performed so that the adhesive applied to the bonding surface has a predetermined first temperature. Thereby, the adhesive agent which is a polyamide-type resin apply | coated to the joining surface used as the opening area | region of a mask pattern hardens | cures, and the fluidity | liquidity of an adhesive agent is suppressed. In the abutting step, the mask pattern is removed from the flow path forming substrate wafer, and the flow path forming substrate wafer and the sealing substrate wafer are brought into contact with each other via an adhesive at the bonding surface. Therefore, the flow path forming substrate wafer and the sealing substrate wafer can be brought into contact with each other through the adhesive at the bonding surface in a state where the fluidity of the adhesive is suppressed. And in a 2nd heating process, it heats so that an adhesive agent may become predetermined | prescribed 2nd temperature, pressurizing an adhesive agent. Thereby, in a state where the fluidity of the adhesive is suppressed, the adhesive is further cured and an adhesive layer is formed between the flow path forming substrate wafer and the sealing substrate wafer. Therefore, before the adhesive layer for joining the flow path forming substrate wafer and the sealing substrate wafer is formed, the adhesive flows out between the flow path forming substrate wafer and the sealing substrate wafer. Can be suppressed.

  Application Example 2 A flow path forming substrate in which an elastic film including a silicon oxide layer and a pressure generating chamber communicating with a nozzle opening for ejecting liquid droplets are formed, and the flow path forming substrate is bonded to the flow path forming substrate via an adhesive. And a sealing substrate for sealing the piezoelectric element formed on the elastic film, wherein the adhesive is a polyamide-based resin.

  According to this configuration, it is possible to suppress the adhesive from flowing out between the flow path forming substrate and the sealing substrate when the flow path forming substrate and the sealing substrate are joined. Therefore, the adhesive is not attached to the end surface of the flow path forming substrate or the sealing substrate in the liquid ejecting head or to the side of the flow path forming substrate opposite to the sealing substrate.

  Application Example 3 A liquid ejecting apparatus including the liquid ejecting head described above.

  According to this configuration, in the liquid ejecting head provided in the liquid ejecting apparatus, the adhesive is not attached to the end surface of the flow path forming substrate or the sealing substrate, or to the side opposite to the sealing substrate of the flow path forming substrate. .

FIG. 2 is an exploded perspective view illustrating a schematic configuration of an ink jet recording head. (A) is a top view of an ink jet recording head, and (b) is a cross-sectional view of the ink jet recording head. Sectional drawing of the longitudinal direction of the pressure generation chamber of the wafer for flow-path formation substrates. Sectional drawing of the longitudinal direction of the pressure generation chamber of the wafer for flow-path formation substrates. Sectional drawing of the longitudinal direction of the pressure generation chamber of the wafer for flow-path formation substrates. Sectional drawing of the longitudinal direction of the pressure generation chamber of the wafer for flow-path formation substrates. Sectional drawing of the longitudinal direction of the pressure generation chamber of the wafer for flow-path formation substrates. The flowchart of the joining process which joins a flow-path formation board | substrate and a sealing substrate. 1 is an external perspective view illustrating an example of an ink jet recording apparatus.

Hereinafter, the present invention will be described in detail based on embodiments.
FIG. 1 is an exploded perspective view showing a schematic configuration of an ink jet recording head H which is an example of a liquid jet head according to the present embodiment. 2A is a plan view of the ink jet recording head H, and FIG. 2B is a cross-sectional view taken along the line AA ′ in the plan view of FIG.

  As shown in the figure, in this embodiment, the flow path forming substrate 10 is made of a silicon single crystal substrate, and an elastic film 50 made of silicon dioxide is formed in advance on one surface of the flow path forming substrate 10 by thermal oxidation. .

  In the flow path forming substrate 10, a pressure generation chamber 12, a liquid supply path 14, and a communication path 15 that are partitioned by a plurality of partition walls 11 are formed in the longitudinal direction of the pressure generation chamber 12. One end portion side of the pressure generating chamber 12 communicates with the liquid supply passage 14, and one end portion side of the liquid supply passage 14 communicates with the communication passage 15. The plurality of pressure generation chambers 12, the plurality of liquid supply paths 14, and the plurality of communication paths 15 are arranged in parallel in the short direction of the pressure generation chamber 12.

  On the opposite side of the communication path 15 from the liquid supply path 14, a communication portion 13 that communicates with each communication path 15 is provided. A sealing substrate 30 that is a bonding substrate is bonded to the surface of the flow path forming substrate 10 on the elastic film 50 side, and the communication portion 13 is connected to a manifold portion 31 that is a through hole provided in the sealing substrate 30. A part of the common liquid chamber 100 is formed in communication. As described above, the flow path forming substrate 10 in the present embodiment is provided with the pressure generation chamber 12, the liquid supply path 14 as the liquid flow path, the communication path 15, and the communication portion 13.

  On the opposite side of the flow path forming substrate 10 from the sealing substrate 30, a nozzle plate 20 having nozzle openings 21 communicating with the pressure generating chambers 12 is fixed by an adhesive, a heat welding film, or the like. The nozzle plate 20 is made of, for example, glass ceramics, a silicon single crystal substrate, or stainless steel.

  An insulator film 55 is formed on the elastic film 50 formed on the flow path forming substrate 10 on the sealing substrate 30 side. On the insulator film 55, a piezoelectric element 300 composed of a lower electrode film 60, a piezoelectric layer 70, and an upper electrode film 80 is formed. A diaphragm composed of the elastic film 50, the insulator film 55 and the lower electrode film 60 is configured, and the diaphragm is deformed by driving the piezoelectric element 300.

  A lead electrode 90 is drawn from the upper electrode film 80 of each piezoelectric element 300, and a voltage is selectively applied to each piezoelectric element 300 via the lead electrode 90. The lead electrode 90 includes a base layer 91 made of, for example, nickel chromium (NiCr) and a metal layer 92 formed on the base layer 91 and made of, for example, gold (Au).

  The underlayer 91 serves as an underlayer for bringing the metal layer 92 and the insulator film 55 and the like into close contact with each other, and a barrier that prevents the metals forming the upper electrode film 80 and the metal layer 92 from chemically reacting with each other. It has a role as a layer.

  Examples of the main material of the metal layer 92 include gold (Au), platinum (Pt), aluminum (Al), and copper (Cu). The material of the base layer 91 may be any material that has adhesiveness to the metal layer 92 and adhesiveness to the adhesive layer 35. Specifically, titanium (Ti), titanium tungsten compound (TiW), Nickel (Ni), chromium (Cr), nickel chromium compound (NiCr), etc. are mentioned.

  On the peripheral edge of the opening on the sealing substrate 30 side of the communication portion 13 of the flow path forming substrate 10, the lead electrode 90 made of the same member as the base layer 91 and the metal layer 92 constituting the lead electrode 90 is discontinuous and discontinuous. A metal layer 190 is provided.

  On the flow path forming substrate 10 on which the piezoelectric element 300 is formed, the sealing substrate 30 in which the manifold portion 31 is provided in a region facing the communication portion 13 includes, for example, an adhesive layer 35 made of an epoxy adhesive or the like. Are joined by.

  Since the discontinuous metal layer 190 is provided at the peripheral edge of the opening of the flow path forming substrate 10, the thickness of the adhesive layer in the adhesive region of the peripheral edge of the flow path forming substrate 10 and the adhesive region on the lead electrode 90 side. Since the thickness of the adhesive layer can be made substantially the same, it is possible to prevent problems due to the outflow of excess adhesive.

  The common liquid chamber 100 in FIG. 2B includes a manifold portion 31 formed on the sealing substrate 30, a communication portion 13 formed on the flow path forming substrate 10, and the sealing substrate 30 and the flow path forming substrate 10. It is comprised from the through-hole which penetrates a junction part. Therefore, the cross section at the joint between the sealing substrate 30 and the flow path forming substrate 10 is exposed to the common liquid chamber 100.

  As described above, the manifold portion 31 communicates with the communication portion 13 and constitutes a part of the common liquid chamber 100. Instead of integrally forming the communication portion 13 as shown in FIG. 1, the communication portion 13 may be configured as a plurality of communication portions respectively corresponding to the pressure generation chambers 12. In this case, the common liquid chamber 100 is configured only by the manifold portion 31 formed on the sealing substrate 30.

  In the sealing substrate 30, a piezoelectric element holding portion 32 having a space that does not hinder the contraction and expansion of the piezoelectric element 300 is provided in a region facing the piezoelectric element 300. In addition, the piezoelectric element holding part 32 should just have a space of the grade which does not inhibit contraction and expansion | extension of the piezoelectric element 300, and the said space may be sealed or may not be sealed. As the sealing substrate 30, it is preferable to use a material substantially the same as the coefficient of thermal expansion of the flow path forming substrate 10, for example, glass, a ceramic material, or the like.

  A drive circuit 120 for driving the piezoelectric element 300 is mounted on the sealing substrate 30. As the drive circuit 120, for example, a circuit board, a semiconductor integrated circuit (IC), or the like can be used. The drive circuit 120 and the lead electrode 90 are electrically connected via a connection wiring 121 made of a conductive wire such as a bonding wire.

  A compliance substrate 40 including a sealing film 41 and a fixing plate 42 is bonded to a region corresponding to the manifold portion 31 of the sealing substrate 30. The sealing film 41 is made of a material having low rigidity and flexibility, and one surface of the manifold portion 31 is sealed by the sealing film 41. The fixed plate 42 is formed of a hard material such as metal. Since the region facing the common liquid chamber 100 of the fixing plate 42 is an opening 43 that is completely removed in the thickness direction, one surface of the common liquid chamber 100 has a flexible sealing film. Only 41 is sealed.

  In such an ink jet recording head H of the present embodiment, ink is taken in from an external liquid supply means (not shown), filled with ink from the common liquid chamber 100 to the nozzle opening 21, and then from the drive circuit 120. In accordance with the recording signal, a voltage is applied between the lower electrode film 60 and the upper electrode film 80 corresponding to the pressure generation chamber 12, and the elastic film 50, the insulator film 55, the lower electrode film 60 and the piezoelectric layer 70 are moved. By deflecting and deforming, the pressure in each pressure generating chamber 12 is increased and ink droplets are ejected from the nozzle openings 21.

  Hereinafter, a method for manufacturing the ink jet recording head H will be described with reference to FIGS. 3 to 7 are cross-sectional views in the longitudinal direction of the pressure generation chamber of the flow path forming substrate wafer.

First, as shown in FIG. 3A, a channel forming substrate wafer 110 which is a silicon wafer is thermally oxidized in a diffusion furnace at about 1100 ° C., and a silicon dioxide film 51 constituting an elastic film 50 is formed on the surface thereof. To do. Next, as shown in FIG. 3B, an insulator film 55 made of zirconium oxide is formed on the elastic film 50 (silicon dioxide film 51). Specifically, after a zirconium (Zr) layer is formed on the elastic film 50 (silicon dioxide film 51) by, for example, sputtering, the zirconium layer is thermally oxidized in a diffusion furnace at 500 to 1200 ° C., for example. As a result, an insulator film 55 made of zirconium oxide (ZrO ₂ ) is formed.

  Next, as shown in FIG. 3C, after the lower electrode film 60 is formed by stacking platinum and iridium on the insulator film 55, for example, the lower electrode film 60 is patterned into a predetermined shape.

  4A, for example, a piezoelectric layer 70 made of lead zirconate titanate (PZT) or the like and an upper electrode film 80 made of iridium, for example, are formed on the flow path forming substrate wafer 110. As shown in FIG. 4B, the piezoelectric element 300 is formed by patterning the piezoelectric layer 70 and the upper electrode film 80 in a region facing each pressure generating chamber 12. The method for forming the piezoelectric layer 70 is not particularly limited. For example, in this embodiment, a so-called sol in which a metal organic substance is dissolved and dispersed in a solvent is applied, dried, gelled, and further fired at a high temperature. The piezoelectric layer 70 is formed by using a so-called sol-gel method for obtaining the piezoelectric layer 70 made of an oxide.

  Next, as shown in FIG. 4C, patterning is performed by ion milling to form an opening 56 in the insulator film 55 and an opening 52 in the elastic film 50. At this time, when performing ion milling of the insulator film 55 and the elastic film 50, although not shown, the regions other than the openings 56 and 52 are protected with a mask such as a resist so that they are not etched by ion milling.

  As shown in FIG. 5A, a base layer 91 made of nickel chromium (NiCr) is formed over the entire surface of the flow path forming substrate wafer 110, and, for example, gold (Au) is formed on the base layer 91. A metal layer 92 made of is formed.

  Next, as shown in FIG. 5B, the metal layer 92 is formed into a predetermined shape. Specifically, a mask pattern (not shown) made of, for example, a resist is formed on the metal layer 92, and the region corresponding to the piezoelectric element 300 and the region of the metal layer 92 corresponding to the communication portion 13 are removed. Thus, the metal layer 92 is patterned into a predetermined shape.

  Then, as shown in FIG. 5C, by forming the base layer 91 into a predetermined shape, the lead electrode 90 and the discontinuous discontinuity between the lead electrode 90 in the vicinity of the peripheral edge of the communication portion 13 to be formed later. A metal layer 190 is formed. Specifically, similarly to the case where the metal layer 92 has a predetermined shape, a mask pattern (not shown) made of, for example, a resist is formed on the base layer 91, and the region and the communication portion corresponding to the piezoelectric element 300 are formed. By removing the region of the base layer 91 corresponding to 13, the base layer 91 is patterned into a predetermined shape.

  Next, a method for bonding the flow path forming substrate wafer 110 and the sealing substrate wafer 130 will be described. A manifold substrate 31, a piezoelectric element holding unit 32, and the like are formed in advance on a sealing substrate wafer 130 to be the sealing substrate 30. The sealing substrate wafer 130 is, for example, a silicon wafer having a thickness of about 400 μm, and the rigidity of the flow path forming substrate wafer 110 is significantly improved by bonding the sealing substrate wafer 130.

  FIG. 8 is a flowchart illustrating a process of bonding the flow path forming substrate wafer 110 and the sealing substrate wafer 130 together. In the adhesive application step S10, a mask pattern (not shown) formed of, for example, a resin is bonded to the flow path forming substrate wafer 110. The mask pattern has an opening region in which a region corresponding to the bonding surface of the flow path forming substrate wafer 110 with the sealing substrate wafer 130 is opened, and a region not corresponding to the bonding surface is masked.

  In the adhesive application step S <b> 10, a liquid ejecting apparatus having a liquid ejecting head that ejects liquid on the opening area of the mask pattern, that is, the bonding surface of the flow path forming substrate wafer 110 with the sealing substrate wafer 130 is used. Then, an adhesive is jetted from the liquid jet head and applied. You may use the method by the screen printing which apply | coats an adhesive agent to the opening area | region of a mask pattern by rolling the roller which apply | coated the adhesive agent along the surface of a mask pattern.

  As the adhesive used in the present embodiment, HIMAL (registered trademark) manufactured by Hitachi Chemical Co., Ltd., which is a polyamide resin, is used.

  In the first heating step S20, the adhesive applied to the bonding surface with the sealing substrate wafer 130 in the flow path forming substrate wafer 110 serving as the opening region of the mask pattern is predetermined for 15 to 60 minutes. Heat to a first temperature (about 180 ° C.).

  The heating method may be a method of heating the adhesive 110 by heating the flow path forming substrate wafer 110 and conducting heat from the flow path forming substrate wafer 110, or by irradiating the adhesive with infrared rays and by heat radiation. A method of heating the adhesive may also be used.

  In the contact step S30, the mask pattern is removed from the flow path forming substrate wafer 110. At this time, the viscosity of the adhesive remaining on the joint surface of the flow path forming substrate wafer 110 with the sealing substrate wafer 130 is the viscosity of the adhesive when applied to the opening area of the mask pattern in the adhesive application step S10. It is increasing more. Therefore, even if the mask pattern is removed, the adhesive does not flow out from the joint surface. In the contact step S30, the flow path forming substrate wafer 110 and the sealing substrate wafer 130 are contacted via an adhesive.

  In the second heating step S40, the adhesive is applied from 15 minutes while applying pressure to the sealing substrate wafer 130 and pressurizing the adhesive between the flow path forming substrate wafer 110 and the sealing substrate wafer 130. For 60 minutes, the flow path forming substrate wafer 110 and the sealing substrate wafer 130 are heated to a predetermined second temperature (250 ° C. or higher). As a result, as shown in FIG. 6A, the adhesive layer 35, which is cured by further increasing the viscosity of the adhesive, is formed between the flow path forming substrate wafer 110 and the sealing substrate wafer 130. The path forming substrate wafer 110 and the sealing substrate wafer 130 are bonded together.

  Next, as shown in FIG. 6B, the flow path forming substrate wafer 110 is ground to a certain thickness, and further wet-etched with hydrofluoric acid to thereby reduce the flow path forming substrate wafer 110 to a predetermined thickness. Say it. For example, the flow path forming substrate wafer 110 is processed to a thickness of about 70 μm by grinding and wet etching. Next, as shown in FIG. 6C, a mask film 53 made of, for example, silicon nitride (SiN) is newly formed on the flow path forming substrate wafer 110 and patterned into a predetermined shape.

  Then, as shown in FIG. 7A, the manifold portion 31 of the sealing substrate wafer 130 is sealed with, for example, an alkali-resistant sealing film 38, and then the flow path forming substrate through the mask film 53. The pressure wafer 12, the liquid supply path 14, the communication path 15, the communication portion 13, and the like are formed in the flow path forming substrate wafer 110 by anisotropic etching (wet etching) of the process wafer 110. At this time, although not shown, the entire surface of the sealing substrate wafer 130 opposite to the flow path forming substrate wafer 110 side is further covered with, for example, a heat-sealing film.

  As described above, since the manifold portion 31 of the sealing substrate wafer 130 is sealed by the sealing film 38, the etching wiring is provided on the surface of the sealing substrate wafer 130 from the manifold portion 31 side. And does not flow into the lead electrode 90.

  Thereby, etching liquid does not adhere to the connection wiring and the lead electrode 90 provided on the surface of the sealing substrate wafer 130, and occurrence of defects such as disconnection can be prevented. At this time, the end surface of the discontinuous metal layer 190 on the side of the communicating portion 13 is sealed with the adhesive layer 35, so that the base layer 91 of the discontinuous metal layer 190 and the end surface of the metal layer 92 are peeled off by wet etching. There is no fear of doing it.

  As shown in FIG. 7B, after peeling off the sealing film 38 and the heat sealing film (not shown), the drive circuit 120 is mounted on the connection wiring formed on the sealing substrate wafer 130. The drive circuit 120 and the lead electrode 90 are connected by the connection wiring 121 (see FIG. 2). Thereafter, unnecessary portions of the outer peripheral edge portions of the flow path forming substrate wafer 110 and the sealing substrate wafer 130 are removed by cutting, for example, by dicing.

  The nozzle plate 20 having the nozzle openings 21 is bonded to the surface of the flow path forming substrate wafer 110 opposite to the sealing substrate wafer 130, and the compliance substrate 40 is attached to the sealing substrate wafer 130. The ink jet recording head H having the above-described structure is manufactured by joining and dividing the flow path forming substrate wafer 110 and the like into the flow path forming substrate 10 and the like having one chip size as shown in FIG.

  As described above, the method of manufacturing the ink jet recording head H as the liquid ejecting head of the present embodiment has the pressure generating chamber 12 that communicates with the elastic film 50 including the silicon oxide layer and the nozzle opening 21 that ejects droplets. And a flow path forming substrate 10 and a sealing substrate 30 that seals the piezoelectric element 300 formed on the elastic film 50. Adhesive application for applying an adhesive, which is a polyamide-based resin, to the bonding surface of the mask pattern opening region between the flow path forming substrate wafer 110 to be the substrate 10 and the sealing substrate wafer 130 to be the sealing substrate 30 The mask pattern is removed from step S10, the first heating step S20 in which the adhesive applied to the bonding surface is heated to a predetermined first temperature, and the flow path forming substrate wafer 110. Then, the contact step S30 for contacting the flow path forming substrate wafer 110 and the sealing substrate wafer 130 via the adhesive at the bonding surface, and the adhesive is brought to a predetermined second temperature while applying the adhesive. And a second heating step S40 for heating so as to be.

  According to this structure, in 1st heating process S20, it heats so that the adhesive agent apply | coated to the joint surface may become predetermined | prescribed 1st temperature. Thereby, the adhesive agent which is a polyamide-type resin apply | coated to the joining surface used as the opening area | region of a mask pattern hardens | cures, and the fluidity | liquidity of an adhesive agent is suppressed. In the abutting step S30, the mask pattern is removed, and the flow path forming substrate wafer 110 and the sealing substrate wafer 130 are abutted on the bonding surface via an adhesive. Therefore, the flow path forming substrate wafer 110 and the sealing substrate wafer 130 can be brought into contact with each other through the adhesive at the bonding surface in a state where the fluidity of the adhesive is suppressed. And in 2nd heating process S40, it heats so that an adhesive agent may become predetermined | prescribed 2nd temperature, pressurizing an adhesive agent. As a result, the adhesive is further cured and an adhesive layer is formed between the flow path forming substrate wafer 110 and the sealing substrate wafer 130 with the fluidity of the adhesive suppressed. Therefore, before the adhesive layer for joining the flow path forming substrate wafer 110 and the sealing substrate wafer 130 is formed, the bonding is performed between the flow path forming substrate wafer 110 and the sealing substrate wafer 130. It can suppress that an agent flows out.

  The ink jet recording head H includes a flow path forming substrate 10 in which an elastic film 50 including a silicon oxide layer and a pressure generating chamber 12 communicating with a nozzle opening 21 for ejecting droplets are formed, and a flow path forming substrate. 10 and a sealing substrate 30 that seals the piezoelectric element 300 formed on the elastic film 50, and the adhesive is a polyamide-based resin.

  According to this configuration, when the flow path forming substrate wafer 110 to be the flow path forming substrate 10 and the sealing substrate wafer 130 to be the sealing substrate 30 are joined, the flow path forming substrate wafer 110 and the sealing substrate The adhesive can be prevented from flowing out from between the wafer 130. Therefore, no adhesive is attached to the end surfaces of the flow path forming substrate 10 and the sealing substrate 30 in the ink jet recording head H and the side opposite to the sealing substrate 30 of the flow path forming substrate 10. Thereby, it can suppress that the adhesiveness of the flow-path formation board | substrate 10 and the nozzle plate 20 falls.

  The ink jet recording head H described above constitutes a part of a recording head unit having an ink flow path communicating with an ink cartridge or the like, and is mounted on the ink jet recording apparatus. FIG. 9 is an external perspective view showing an example of an ink jet recording apparatus.

  As shown in FIG. 9, the ink jet recording apparatus P includes recording head units 1A and 1B each having an ink jet recording head H. The recording head units 1A and 1B are detachably provided with cartridges 2A and 2B constituting ink supply means. A carriage 3 on which the recording head units 1A and 1B are mounted is attached to a carriage shaft 5 attached to the apparatus main body 4. It is provided so as to be movable in the axial direction. The recording head units 1A and 1B, for example, are configured to eject a black ink composition and a color ink composition, respectively.

  The driving force of the driving motor 6 is transmitted to the carriage 3 via a plurality of gears and timing belt 7 (not shown), so that the carriage 3 on which the recording head units 1A and 1B are mounted is moved along the carriage shaft 5. The On the other hand, the apparatus body 4 is provided with a platen 8 along the carriage shaft 5, and a recording sheet S, which is a recording medium such as paper fed by a not-shown paper feed roller, is wound around the platen 8. It is designed to be transported.

  In the present embodiment, the ink jet recording head H that forms an image on the recording sheet S has been described as an example of the liquid ejecting head. However, the color material ejecting head and the organic EL display used for manufacturing a color filter such as a liquid crystal display are described. The present invention is also applied to electrode material ejection heads used for electrode formation such as FED (Field Emission Display), bio-organic matter ejection heads used for biochip manufacturing, and the like.

  DESCRIPTION OF SYMBOLS 10 ... Flow path formation board | substrate, 12 ... Pressure generation chamber, 30 ... Sealing board | substrate, 35 ... Adhesive layer, 50 ... Elastic film, 300 ... Piezoelectric element, H ... Inkjet recording head, P ... Inkjet recording apparatus.

Claims (3)

A flow path forming substrate in which an elastic film including a silicon oxide layer and a pressure generating chamber communicating with a nozzle opening for ejecting droplets are formed, and a sealing substrate for sealing a piezoelectric element formed on the elastic film A method of manufacturing a liquid jet head comprising:
Adhesive for applying an adhesive, which is a polyamide-based resin, to a bonding surface that becomes an opening region of a mask pattern between a flow path forming substrate wafer to be the flow path forming substrate and a sealing substrate wafer to be the sealing substrate Application process;
A first heating step of heating so that the adhesive applied to the bonding surface has a predetermined first temperature;
A contact step of removing the mask pattern from the flow path forming substrate wafer and contacting the flow path forming substrate wafer and the sealing substrate wafer via the adhesive at the bonding surface;
And a second heating step of heating the adhesive so as to reach a predetermined second temperature while pressurizing the adhesive. A flow path forming substrate in which an elastic film including a silicon oxide layer and a pressure generation chamber communicating with a nozzle opening for ejecting droplets are formed;
A sealing substrate that is bonded to the flow path forming substrate via an adhesive and seals the piezoelectric element formed on the elastic film,
The liquid ejecting head according to claim 1, wherein the adhesive is a polyamide-based resin.   A liquid ejecting apparatus comprising the liquid ejecting head according to claim 2.

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