JP2011167863A - Method for manufacturing stamper, resist master, the stamper and molding - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent local deformation of a minute pattern during manufacturing of a stamper to form a minute pattern of a finally obtained molding corresponding to an original purpose. <P>SOLUTION: This method for manufacturing the stamper includes: (i) a process of preparing a resist master on which a minute pattern B corresponding to an inverted shape of the minute pattern A of the stamper is formed; and (ii) a process of obtaining the stamper on which the minute pattern A is formed by applying electroforming using the resist master as a master block. On the minute pattern forming face of the resist master prepared in the process (i), a recess pattern is formed along a surrounding line surrounding the minute pattern B, and in the process (ii), stress which may be generated during the electroforming is alleviated by the recess pattern. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a stamper manufacturing method, a resist master, a stamper, and a molded product. More specifically, the present invention relates to a manufacturing method of a “stamper having a fine structure”, a resist master used in the stamper manufacturing method, and a stamper and a molded product obtained from the resist master.

  Fabrication of micro structures of micron order or less is generally performed in a wide range of fields such as MEMS (Micro Electro Mechanical System) and μ-TAS (Micro Total Analysis System), and technologies such as machining and photolithography are used. Applied.

  In recent years, such fine structure fabrication technology has also been applied in the fields of chemistry, medical science, and bioscience, and the fabricated microstructure is separated, immobilized, analyzed, extracted, and purified of substances or cells. Or it is used suitably for various processes, such as reaction. Such a fine structure generally has a flat plate shape (or chip shape) or a laminate of these. For example, in addition to a well plate, a microtiter plate, etc., a microchemical chip , Biochip, DNA (deoxyribonucleic acid) chip, microarray chip and the like.

  For example, taking a microarray chip that can be used for DNA analysis as an example, in order to process and analyze a large amount of information at once, many “dents” or “recesses” of several thousand to several hundred thousand on the chip Need to be produced. Such “recesses” or “recesses” are generally called wells, and can contain microbeads, liquids (reaction solutions), etc. (for example, if the well volume is constant, a prescribed volume of reaction solution is added to the wells). Can be stored in).

  In the fields of medical science and bioscience, it is necessary to provide a large number of such wells. Therefore, it is more suitable to produce by batch exposure using photolithography rather than machining each one well. In other words, a resist master is manufactured using photolithography, a stamper is manufactured from the resist master, and then a transfer structure such as injection molding or hot embossing using the stamper as a mold is applied to collect the microstructures at once. Can be produced.

  Here, electroplating is usually carried out when producing a mold or a stamper to be a mold. Unlike plating used for corrosion protection and decoration, this electroplating is to remove the plating film from the object to be plated and use it as a stamper after the plating process. Yes.

Product information of Sumitomo Bakelite Co., Ltd. (Product name: Multiplate for culture) [online], [Search on December 15, 2009], Internet <URL: http://www.sumibe.co.jp/sumilon/plate .html>

  As a result of intensive studies on the production of a stamper for a fine structure, the present inventors have found that there is a problem specific to “microstructure” in the electroforming process. Specifically, a phenomenon has been found that the shape of the fine pattern is deformed in the vicinity of the outer peripheral edge of the fine pattern characterizing the fine structure (particularly in the vicinity of the outer peripheral edge when the fine pattern is formed in a line shape or an array shape). Only a few sequences will be deformed locally).

  Such deformation occurs only at the outer peripheral edge of the fine pattern region, and there is no defect such as “swell” or “crack” on the mirror surface of the plated surface, and there is no defect in the inner region of the fine pattern. No pattern deformation is observed (see FIG. 14).

  Since such deformation phenomenon occurs only at the outer peripheral edge of the fine pattern region, a plate-like molded product obtained from a stamper in which such local deformation has occurred (for example, a well plate in which a plurality of well rows are formed as a fine structure) ), After confirming the shape with SEM, etc., it is possible to use it with an annotation that it cannot be used from the outer periphery to the second or third row. However, if the target shape is not accurately grasped, it is not possible to know whether or not the microbead enters the well due to “deformation”, and the situation in the actual use environment is not known at all. Inconvenience occurs. Further, when such a phenomenon occurs temporarily, a difference occurs in accuracy and the number of usable wells between individual stampers. Furthermore, it is difficult to distinguish between “non-defective part” and “defective part”, such as how much deformation is to be defective and how many columns are allowed to be deformed. In other words, in order to achieve high-accuracy analysis in other words, the desired wells in the plate-shaped molded product are accurately formed without deformation as originally intended, and the number of wells is accurately grasped. It can be said that it is necessary to keep.

  The present invention has been made in view of such circumstances. That is, an object of the present invention is to prevent local deformation of a fine pattern at the time of manufacturing a stamper. As a result, a fine pattern of a molded product finally obtained is formed as originally intended.

In order to solve the above problems, the present invention is a method for manufacturing a stamper,
(I) a step of preparing a resist master on which a fine pattern B corresponding to the inverted shape of the fine pattern A of the stamper is formed; and (ii) electroforming using the resist master as a matrix, Comprising the step of obtaining a stamper formed with
In the fine pattern formation surface of the resist master prepared in step (i), a concave pattern is formed along an encircling line surrounding the fine pattern B,
In the step (ii), there is provided a stamper manufacturing method characterized in that “stress that can be generated during electroforming” is relaxed by a concave pattern.

  One of the features of the present invention is that a master in which a concave pattern is formed so as to surround a fine pattern (that is, a fine pattern B) is used as a resist master used as a matrix for an electroforming process. That is, the present invention uses a resist master in which a concave pattern is formed along an encircling line that surrounds the fine pattern B on the fine pattern forming surface. Thereby, the “stress” that may occur in the fine pattern B and / or the plating film formed thereon during electroforming can be effectively reduced by the recess pattern. In addition, the “enclosure line surrounding the fine pattern B” is, for example, a virtual line positioned so as to surround at least a part of the fine pattern region as shown in FIGS. Means substantially. Further, “stress” means any force that the fine pattern B and / or the plating film can receive during the electroforming process, and in particular, the fine pattern B and / or plating in the outer peripheral area of the fine pattern B. It means the force that the membrane receives.

  The “resist master” used in this specification is a so-called “resist master”. In particular, the “resist master” in the present invention is generally used in various fields such as separation, immobilization, analysis, extraction, purification, reaction or mixing in the medical science field or the bio field. This means a master for producing a stamper (≈mold / mold) for a “plate-shaped molded product”.

  In the present invention, the “fine pattern” means a pattern formed from a fine concavo-convex shape, and a “fine concave portion (or fine dent)” or “fine convex portion constituting the fine concavo-convex shape. This means that the dimensions (or dimensions such as width, height, depth, etc.) of (or the fine ridges) are of the order of micrometers to millimeters (about 1 μm to 10 mm). Note that, depending on the type of plate-shaped molded product finally obtained from the resist master, the form of “fine depressions” (that is, “fine concave portions”) constituting the fine pattern B of the resist master may generally differ. For example, in the case where the plate-shaped molded product corresponds to a well plate or the like, the “fine depression” or “fine concave portion” often has a well shape, whereas in the case where the plate-shaped molded product corresponds to a microchemical chip or the like. The “fine depression” or “fine recess” often has a channel shape (groove shape) or a channel shape. Therefore, with regard to the resist master, the diameter and depth of the opening surface of the well-shaped recess constituting the fine pattern B and the channel width and depth of the channel-shaped recess are on the order of micrometers to millimeters (about 1 μm to 10 mm). There are many cases.

The present invention also provides a resist master used in the stamper manufacturing method described above. Such a resist master is
A fine pattern B corresponding to the inverted shape of the fine pattern A of the stamper is formed,
In the fine pattern formation surface of the resist master, the concave pattern is formed along the surrounding line surrounding the fine pattern B.

  In such a resist master, attention is paid to the stress in the region where the fine pattern is formed and the region where the fine pattern is not formed. Pattern) is additionally provided, and the three-dimensional structure is gradually changed by the buffer pattern.

  In a preferred aspect, an annular recess (ring-shaped recess) surrounding the fine pattern B is formed as the recess pattern. It is preferable that at least two annular recesses are formed. When a plurality of annular recesses are formed as described above, it is preferable that the depth dimension of the annular recess positioned on the inner side is larger than the depth dimension of the annular recess positioned on the outer side. That is, it is preferable that the depth dimension of the plurality of annular recesses gradually increases toward the inside, that is, gradually decreases toward the outside. The annular recess may be formed continuously, or at least a part thereof may be formed discontinuously (that is, intermittently).

  In another preferred embodiment, a plurality of recesses having the same shape or similar shapes as the recesses constituting the fine pattern B are formed along the surrounding line (that is, the surrounding line surrounding the fine pattern B) as the recessed pattern. ing. As in the case of the “annular recess” described above, the depth dimension of each recess provided along the inner envelope line is equal to the depth of each recess provided along the outer envelope line. It is preferable that it is larger than the vertical dimension. That is, it is preferable that the depth of each recess is increased stepwise as it is located on the inner side, that is, it is preferably reduced stepwise as it is located on the outer side.

The present invention also provides a stamper formed by performing electroforming using the above resist master as a matrix. Such a stamper
The fine pattern A corresponding to the inverted shape of the fine pattern B of the resist master is formed, and the convex pattern is formed along the surrounding line surrounding the fine pattern A on the fine pattern forming surface of the stamper. have.

Furthermore, the present invention also provides a molded product obtained by molding using the above-mentioned stamper as a mold / mold. The molded article of the present invention is
The fine pattern C corresponding to the inverted shape of the fine pattern A of the stamper is formed, and the concave pattern is formed along the encircling line surrounding the fine pattern C on the fine pattern forming surface of the molded product. Have.

  Such a molded product generally has a plate-like form, and therefore, the molded product of the present invention can be referred to as a “plate-shaped molded product”. Incidentally, such a plate-shaped molded article can generally have a thickness of about 100 μm to 50 mm because it is “plate-shaped”.

  In the stamper manufacturing method of the present invention, the “stress that can occur in the fine pattern B and / or the plating film formed thereon during electroforming” can be relaxed by the recess pattern. This effectively prevents “local deformation” on the surface of the stamper where the fine pattern is formed. More specifically, in the manufactured stamper, the “phenomenon that the fine pattern shape is deformed only in the vicinity of the outer periphery of the fine pattern” can be suppressed, and the fine pattern (that is, the fine pattern A as originally intended) can be suppressed. ) Can be formed. Therefore, a fine pattern (that is, a fine pattern C) as originally intended can be formed on a molded product obtained by molding using such a stamper as a mold. This means that the fine structure such as the number of wells and the well shape of the molded product can be accurately grasped, and can contribute to highly accurate analysis.

  Incidentally, in order to obtain the shape accuracy of a stamper or a molded product in the prior art, it was necessary to design in advance assuming “local deformation phenomenon of a fine pattern”. Shape accuracy can be obtained simply by arranging a concave pattern around the periphery (for example, in some embodiments, shape accuracy can be obtained only by arranging a concave pattern that is smaller in the up / down direction or width / depth direction than the fine pattern. it can). Therefore, it can be said that the present invention is very useful in that it is possible to omit a design that takes into account such a phenomenon that is difficult to predict in a simple manner.

  Furthermore, in the present invention, “local deformation” of the fine pattern region can be effectively prevented, and in view of that point, it is possible to improve the yield of the stamper process in the production of fine structures such as MEMS and μ-TAS. I can say that.

FIG. 1 is a diagram conceptually showing an “enclosure” used in the present invention. FIG. 2 is a process cross-sectional view schematically showing a process of creating a resist master. FIG. 3 is a top plan view (FIG. 3A) and a cross-sectional view (FIG. 3B) schematically showing the resist master of the present invention. FIG. 4 is a perspective view schematically showing the resist master of the present invention. FIG. 5 is a top plan view (FIG. 5A) and a sectional view (FIG. 5B) schematically showing the resist master of the present invention. FIG. 6 is a perspective view schematically showing the resist master of the present invention. FIG. 7 is a perspective view schematically showing the resist master of the present invention. FIG. 8 is a perspective view schematically showing the resist master of the present invention. FIG. 9 is a perspective view schematically showing the resist master of the present invention. FIG. 10 is a top plan view (FIG. 10A) and a cross-sectional view (FIG. 10B) schematically showing the resist master of the present invention. FIG. 11 is a perspective view schematically showing the stamper of the present invention. FIG. 12 is a perspective view schematically showing the molded product of the present invention. FIG. 13 is a plan view schematically showing the mask used in Comparative Example 1. FIG. 14 is a diagram schematically showing the vicinity of the outer periphery of a fine pattern in which “local deformation” of the fine pattern shape occurs (prior art).

  Hereinafter, the present invention will be described in more detail with reference to the drawings. First, the stamper manufacturing method of the present invention will be described. In this description, the registration master of the present invention is also described. Thereafter, a stamper and a molded product obtained from the resist master will be described.

<< Stamper Manufacturing Method and Resist Master of the Present Invention >>
In carrying out the stamper manufacturing method of the present invention, step (i) is first performed. That is, a resist master having a fine pattern B corresponding to the inverted shape of the fine pattern A of the target stamper is prepared.

  Since the “stamper” is formed by electroforming using a resist master as a matrix, a fine pattern of the resist master is transferred. In other words, the plating portion is peeled off from the resist master after the plating process is performed on the resist master which is a matrix in the electroforming process, and the stamper has a shape obtained by inverting the shape of the resist master. . Therefore, in step (i) of the manufacturing method of the present invention, a resist master having a desired inverted shape on which the intended fine pattern A of the stamper is formed is prepared.

  The step (i) will be specifically described. First, as shown in FIG. 2A, a substrate 10 that serves as a base for a resist master is prepared. If the board | substrate 10 is generally used in the said technical field, there will be no restriction | limiting in particular. For example, a material such as silicon (Si) or glass can be used as the material of the substrate. In the case of a silicon substrate, it is preferably “a silicon wafer having a smooth surface with a mirror polished surface and a thermal oxide film formed on the surface”. In addition, it is preferable that the thickness of a board | substrate is about 0.5-10 mm.

  Next, as illustrated in FIG. 2B, a resist material is applied on the substrate 10 to form a resist film 20. The resist material preferably contains an organic solvent so as to be suitable for coating. The coating can be performed by, for example, spin coating (rotary coating). After applying the resist material, it is preferably subjected to a heat treatment of about 70 ° C. to about 120 ° C. (that is, preferably subjected to a baking treatment). Thereby, a desired resist film 20 is formed. The surface to which the resist material is applied may be pretreated, for example, hexamethyldisilazane may be applied and baked to improve the hydrophobicity of the application surface.

  The resist material to be applied is not particularly limited as long as it is generally used in the technical field. That is, it may be a positive resist material or a negative resist material. As a specific resist material, for example, at least one material selected from the group consisting of phenolic polymers, acrylic polymers, styrene polymers, vinyl polymers, epoxy resins, and polyphthalaldehyde (PPA) is used. be able to. In particular, a composition comprising a phenolic polymer novolak resin and a diazonaphthoquinone compound is generally widely used as a positive resist.

  After the resist film 20 is formed, as shown in FIG. 2C, a mask 30 is disposed on the resist film 20 and exposure is performed. The “mask” referred to here typically means a photomask, and means an original plate having a portion that transmits light during exposure and a portion that does not transmit light. Such a mask 30 is not particularly limited as long as it is generally used in the technical field. As a matter of course, when a positive resist material is used, the exposed area dissolves in the developer, whereas when a negative resist material is used, the exposed area remains undissolved in the developer. Therefore, an appropriate mask may be used according to the resist material used.

  The exposure is not particularly limited as long as it is generally employed in the technical field, and is closely contacted (contact exposure), proximity exposure (proximity exposure), equal magnification projection exposure (projection exposure), or reduced projection exposure. (Step-and-repeat exposure) may be used. For example, close exposure may be performed as in the illustrated embodiment. For exposure, a laser or electron beam may be used directly, and synchrotron radiation may be used as in a LIGA (Lithographie Galvanoformung Abformung) process.

  After the exposure, development processing is performed. Such development processing is not particularly limited as long as it is generally used in the technical field.

  Through the above process, a “resist master 40 on which a fine pattern B corresponding to the inverted shape of the fine pattern A of the manufactured stamper is formed” can be obtained (see FIG. 2D).

  Here, in the resist master used in the manufacturing method of the present invention, it is necessary to additionally form “a shape other than the fine pattern B”. That is, on the fine pattern formation surface of the resist master, in addition to the fine pattern B, a concave pattern is also formed along the surrounding line surrounding the fine pattern B. Therefore, in the manufacturing method of the present invention, a “mask having a mask pattern that can transfer and form the concave pattern together with the fine pattern B” is used for exposure. In this regard, a multi-tone mask that can freely change the gradation or shading of the mask pattern may be used. There are two types of multi-tone masks, a gray tone mask and a halftone mask. The gray tone mask makes a slit below the resolution of the exposure machine, and the slit part blocks a part of the light to realize intermediate exposure. On the other hand, the halftone mask uses a “semi-transmissive” film and can perform intermediate exposure. In any case, three exposure levels of “exposed portion”, “intermediate exposed portion”, and “unexposed portion” can be realized by one exposure, and patterns having different resist thicknesses can be obtained after development.

  Subsequent to step (i), step (ii) is performed. That is, the stamper is obtained by performing electroforming using the resist master as a matrix. “Electroforming” is the same in principle as electroplating, and is an electrodeposition technique using an electrochemical reaction. In particular, in the present invention, the resist master used as a mother die is energized to perform thick plating, and this is peeled off and separated from the mother die to obtain a stamper having a shape opposite to the mother die (that is, electrodeposition on the resist master). Use the metal part as a stamper).

  Since the resist master used for electroforming can be a non-conductor, it is preferable to form a conductive film on the fine pattern forming surface of the resist master to make the surface conductive prior to the electroforming process. For forming the conductive film, for example, a sputtering method, a vacuum evaporation method, a CVD method, or the like may be used. The conductive film may preferably have a thickness of about 30 to 300 nm.

  The plating process itself of the electroforming process is performed by wet plating using an aqueous electrolyte solution (wet process). That is, electroplating is performed. In such electroplating, typically, a resist master is used as a cathode in an aqueous electrolyte solution in which metal ions are present, and this is connected to an anode via an external power source, and electric energy is applied from the external power source to apply the cathode (ie, resist). A reduction reaction is caused at the master). As a result, metal ions in the aqueous electrolyte solution receive electrons at the resist master interface and are deposited as metal to form a plating layer. The thickness of the plating layer is preferably about 50 to 1000 μm, more preferably about 300 to 600 μm. As the electroformed metal, nickel can be typically used. However, it is not limited to nickel, and at least one metal selected from the group consisting of Ag, Au, Bi, Cd, Co, Cr, Cu, Fe, In, Pd, Pt, Ru, Sn, and Zn is also an electrode. It can be used as a cast metal.

  By going through steps (i) and (ii) as described above, a target stamper can be finally obtained. In particular, in the present invention, since the concave pattern is formed so as to surround the fine pattern B of the resist master, the stress that can occur during electroforming can be relieved by the concave pattern. More specifically, “the stress that can occur in the fine pattern B and / or the plating film formed thereon during electroforming” can be relaxed by the recess pattern. As a result, in the obtained stamper, “deformation of the fine pattern in the vicinity of the outer periphery of the fine pattern” is suppressed, and the fine pattern B as originally aimed can be formed. This means that a fine pattern (that is, a fine pattern C) as originally intended can be formed even for a molded product obtained by molding using such a stamper as a mold.

(Registration master of the present invention)
Next, the resist master used for the stamper manufacturing method described above will be described in detail. That is, description of the registration master of the present invention will be described. In the resist master of the present invention, as described above, the concave pattern is formed along the surrounding line that surrounds the fine pattern B on the fine pattern forming surface. Such an embodiment is shown in FIGS. FIG. 3 shows a plan view and a sectional view of the upper surface side of the resist master of the present invention, and FIG. 4 shows a perspective view of the resist master of the present invention.

  As shown in FIGS. 3 and 4, in the resist master 40 of the present invention, the concave pattern 50 is formed outside the fine pattern region, thereby relieving “stress that can be generated in the fine pattern region during electroforming”. . Therefore, in the present invention, the region where the concave pattern 50 is formed can be called a “stress buffer region” or a “buffer pattern region”.

The concave pattern of the stress buffer region is not particularly limited as long as it is formed so as to surround the fine pattern B, and may be continuously formed so as to entirely surround the fine pattern B as shown in the drawing. Alternatively, it may be formed intermittently. In other words, as the recess pattern, an annular recess may be formed so as to form a continuous ring, or the annular recess may be partially interrupted. In particular, in the present invention, the “stress that can be generated in the fine pattern region during electroforming” can be preferably alleviated by adjusting the depth dimension of each recess constituting the recess pattern. For example, the depth dimension L _D of the concave portion as shown in FIG. 3 (b) is preferably smaller than the depth of each recess 60 constituting the fine pattern B, for example, preferably 1 / 10Le~9 / 10Le More preferably, it is about 15 / 20Le to 1 / 2Le, and more preferably about 4 / 5Le to 1 / 3Le (Le: resist film thickness, see FIG. 3B). To illustrate specific numerical values, the depth _{L D} of the recess, preferably 1 to 300 [mu] m, more preferably 5 to 100 [mu] m, more preferably about 5 to 40 m.

Further, the “stress that can be generated in the fine pattern region during electroforming” can also be moderated by adjusting the separation distance of the recess from the outer edge of the fine pattern region. For example, the distance L _A, as shown in FIG. 3 (b), preferably 0.2Lf～2Lf, more preferably 0.5Lf～1.5Lf, more preferably about 0.8Lf~1.2Lf (Lf: recess 60 between Distance, see FIG. 3 (b)). Furthermore, the “stress that can be generated in the fine pattern region during electroforming” can also be moderated by adjusting the width of the concave portion of the stress buffer region. For example, the width dimension L _{B of the} recess as shown in FIG. 3B is preferably smaller than the width dimension of each recess 60 constituting the fine pattern B, for example, preferably 0.2 Lf to 2 Lf, more preferably 0.2. Lf to 1.2 Lf, more preferably about 0.2 Lf to 0.8 Lf.

<< Various aspects of the concave pattern >>
There are various other embodiments of the “recess pattern”. This will be described below.

(Multiple annular recesses)
An embodiment of “a plurality of annular recesses” is shown in FIGS. 5 and 6. As illustrated, a plurality of annular recesses 50 surrounding the fine pattern B are formed as the recess patterns in the stress buffering region. In this aspect, the three-dimensional structure is gradually changed by the concave pattern forming the stress buffer region, thereby effectively relieving “stress that can be generated in the fine pattern region during electroforming”.

  In this “plurality of annular recesses”, as shown in FIGS. 5 and 6, the depth dimension of the annular recess 50 located on the inner side is larger than the depth dimension of the annular recess 50 located on the outer side. It is preferable that it is large. That is, it is preferable that the depth dimension of the plurality of annular recesses 50 is gradually increased toward the inside, and from the opposite viewpoint, it is preferable that the depth is gradually decreased toward the outside. Thereby, the “stress that can occur in the fine pattern region during electroforming” can be more effectively reduced. In such a case, for example, if the depth dimension of each recess constituting the fine pattern B is H, the depth dimension of the annular recess is preferably increased stepwise inward by H / 3 to H / 5. . In other words, it is preferable that the depth dimension of the annular recess is gradually reduced outward by H / 3 to H / 5. This is intended to buffer the three-dimensional elevation difference step by step at the boundary portion of the fine pattern. By the way, if it is larger than H / 3, there is almost no effect of reducing the plating stress. On the other hand, if it is H / 5 or more, the pattern area of the plating stress relaxation becomes wider, and if the pattern area is limited, the number of fine patterns themselves is reduced. Will have to.

  Similarly, as shown in the sectional view (lower side) of FIG. 6, the width dimension of the annular recess 50 located on the inner side may be larger than the width dimension of the annular recess 50 located on the outer side. Good. That is, the width dimension of the plurality of annular recesses 50 is preferably increased stepwise toward the inner side, and from the opposite viewpoint, it is preferable to decrease stepwise toward the outer side. For example, if the width dimension of each recess constituting the fine pattern B is W, the width dimension of the annular recess may be increased stepwise inward by W / 3 to W / 5. Such an embodiment can also effectively relieve “stress that can occur in the fine pattern region during electroforming”.

  When a plurality of annular recesses are formed, the pitch P1 is preferably about ± 30% of the pitch P2 of each recess constituting the fine pattern B, that is, (P2−P2 × 0.3) <P1. It is preferable that <(P2 + P2 × 0.3). For example, the pitch P1 of the annular recess may be approximately the same as the pitch P2 of each recess constituting the fine pattern B. Such an embodiment can also effectively relieve “stress that can occur in the fine pattern region during electroforming”.

(Intermittent annular recess)
An embodiment of “intermittent annular recess” is shown in FIG. As shown in the drawing, a part of the annular recess formed as the recess pattern is discontinuously formed. Even in such an embodiment, “stress that may occur in the fine pattern region during electroforming” can be reduced.

  In this "intermittent annular recess" mode, as shown in FIG. 7, the recesses (50a, 50b, 50c) of the interrupted region are formed at positions adjacent to the recesses 60 constituting the fine pattern B. It is preferable. In such an embodiment, the separation distance between the intermittent portions, that is, the pitch P3 of the concave portions (50a, 50b, 50c) in the intermittent region as shown in FIG. Good.

  As shown in the figure, even in the case of the “intermittent annular recess”, a plurality may be formed (that is, a plurality of groups may be formed) as in the case of the continuous annular recess. Furthermore, the depth dimension of the “intermittent annular recess” located on the inner side may be larger than the depth dimension of the “intermittent annular recess” located on the outer side.

(Concave part having the same shape as the depression of the fine pattern B)
FIG. 8 shows an aspect of “a recess having the same shape as the recess of the fine pattern B”. As shown in the drawing, in this embodiment, “a recess 50 having the same shape as the recess 60 of the fine pattern B” is formed so as to surround the fine pattern B. That is, “a recess having the same shape as the recess of the fine pattern B” is formed along the surrounding line surrounding the fine pattern B. Even in such an embodiment, “stress that may occur in the fine pattern region during electroforming” can be reduced.

  Because of “the same shape as the recess of the fine pattern B”, the various dimensions of the recess 50 may be the same as the recesses 60 constituting the fine pattern B. However, the present invention is not necessarily limited to this. For example, the depth dimension of the recess 50 may be smaller than the depth dimension of each recess 60 constituting the fine pattern B.

  In this aspect, as shown in the drawing, it is preferable that “a recess 50 having the same shape as the recess 60 of the fine pattern B” is formed at a position adjacent to each recess 60 constituting the fine pattern B. In such an embodiment, the pitch of the concave portions 50 having the same shape, that is, the pitch P4 of the concave portions 50 as shown in FIG. 8 may be preferably about the same as the pitch P2 of the concave portions 60.

(Recesses similar in shape to the recesses of the fine pattern B)
FIG. 9 shows an aspect of “a recess having a shape similar to the recess of the fine pattern B”. As shown in the figure, in this embodiment, “a recess 50 having a shape similar to the recess 60 of the fine pattern B” is formed so as to surround the fine pattern B. That is, “a recess 50 having a shape similar to the recess 60 of the fine pattern B” is formed along the surrounding line surrounding the fine pattern B. Even in such an embodiment, “stress that may occur in the fine pattern region during electroforming” can be reduced.

  Because of the “similar shape to the recess of the fine pattern B”, the various dimensions of the recess may be similar to the recesses constituting the fine pattern B. For example, the similarity magnification may be about 0.3 to 0.95. However, the present invention is not necessarily limited to this. For example, the depth dimension of the recess 50 may be smaller than the depth dimension of each recess 60 constituting the fine pattern B regardless of the similarity magnification.

  As shown in the figure, even if it is an aspect of “a recess having a shape similar to the dent of the fine pattern B”, it may be formed of a plurality of groups, and further, a “recess having a similar shape positioned on the inner side. The similarity magnification of “” may be larger than the similarity magnification of the “similarly shaped recess” located on the outer side.

(Recess pattern in the case of two types of fine patterns)
In the above description, the aspect of “one type of fine pattern and a concave pattern on the periphery thereof” has been mainly described, but the present invention can be applied even in the case of two or more types of fine patterns. FIG. 10A and FIG. 10B exemplarily show an embodiment of “a concave pattern in the case of two kinds of fine patterns”.

  In the illustrated embodiment, two types of fine pattern B and fine pattern B ′ are formed on the fine pattern formation surface of the resist master, and a concave pattern is formed as a stress buffer region (50a, 50b) around them. Yes. In the illustrated embodiment, the above-described “recesses having a shape similar to the recesses of the fine pattern B” are formed.

  As can be seen from the cross-sectional view of FIG. 10B, in the stress buffer region 50a existing between the fine pattern B and the fine pattern B ', the three-dimensional elevation of the fine patterns B and B' is relaxed. Further, as can be seen from the embodiment shown in FIG. 10, “similarity” is obtained by about 1/4 of the difference (absolute value) between “the diameter of each recess 60a of the fine pattern B” and “the diameter of the recess 60b of the fine pattern B ′” The diameter of the “concave portion” may change stepwise. Similarly, “similarly shaped recesses” of about ¼ of the difference (absolute value) between “the depth of each recess 60a of the fine pattern B” and “the depth of the recess 60b of the fine pattern B ′”. The depth may change stepwise.

  Incidentally, in the transition region from the fine pattern B ′ to the flat mirror surface portion, the above-mentioned “recesses similar in shape to the respective depressions of the fine pattern B ′” are formed, but the diameter changes by 1/4 × d. (D: diameter dimension of each recess 60b of the fine pattern B). Similarly, in the transition region, the depth changes by 1/4 × h (h: depth dimension of each recess 60b of the fine pattern B).

<< Stamper of the Present Invention >>
Next, the stamper of the present invention will be described. The stamper of the present invention is a stamper obtained by performing the above-described stamper manufacturing method. That is, the stamper of the present invention is formed by performing electroforming using the resist master of the present invention as a matrix. In this stamper, a fine pattern A corresponding to the inverted shape of the fine pattern B of the resist master is formed, and a convex pattern is also formed along an encircling line surrounding the fine pattern A.

  As an example, a stamper 70 of the present invention is shown in FIG. The stamper 70 shown in the figure is a stamper obtained by electroforming using the resist master of FIGS. As shown in the figure, a fine pattern A corresponding to the inverted shape of the fine pattern B of the resist master is formed on the fine pattern formation surface of the stamper, and a convex pattern 50 'is formed so as to surround the fine pattern A. Has been. The convex pattern 50 'is caused by the concave pattern 50 of the resist master and corresponds to the inverted shape. That is, since the shape of the stamper is caused by the shape of the resist master used for manufacturing the stamper, various dimensions of the fine pattern A and the convex pattern of the stamper can be the same as the fine pattern B and the concave pattern of the resist master.

  For example, the height dimension of the convex part 50 ′ of the stamper is preferably smaller than the height dimension of each raised part 60 ′ constituting the fine pattern A, for example, preferably 1 to 300 μm, more preferably 5 to 100 μm, More preferably, it is about 5-40 micrometers. In particular, as shown in FIG. 11, when the convex pattern of the stamper is composed of a plurality of annular convex portions 50 ′, the height dimension of the annular convex portion 50 ′ located on the inner side is the annular shape located on the outer side. It is preferable that it is larger than the height dimension of convex part 50 '. In other words, it is preferable that the height of each of the plurality of annular protrusions 50 ′ increase stepwise toward the inside, and from the opposite viewpoint, the height decreases stepwise toward the outside. Is preferred.

  Further, for example, the separation distance between the fine pattern A and the convex pattern is preferably about 0.2 Lf ′ to 2 Lf ′, more preferably about 0.5 Lf ′ to 1.5 Lf ′, and still more preferably about 0.8 Lf ′ to 1.2 Lf ′. (Lf ′: distance between raised portions 60 ′). Further, for example, the width dimension of the convex pattern of the stamper is preferably smaller than the width dimension of each raised portion constituting the fine pattern A, for example, 0.2Lf ′ to 2Lf ′, more preferably 0.2Lf ′ to It is about 1.2 Lf ′, more preferably about 0.2 Lf ′ to 0.8 Lf ′.

  In addition, depending on the shape of the resist master, the convex pattern of the stamper may be formed continuously, or at least a part thereof may be formed intermittently. Further, as the convex pattern of the stamper, a plurality of convex portions having the same shape or similar shape to the raised portions constituting the fine pattern A are formed along the surrounding line (that is, the surrounding line surrounding the fine pattern A). To do. In such a case, preferably, the height dimension of each of the protrusions provided along the inner envelope line is higher than the height dimension of each of the protrusion elements provided along the outer envelope line. It is getting bigger.

  The material of the stamper depends on the type of plating metal used for electroforming (that is, “electroformed metal”). For example, Ni, Ag, Au, Bi, Cd, Co, Cr, Cu, Fe, In And at least one metal material selected from the group consisting of Pd, Pt, Ru, Sn and Zn. Further, the thickness of the stamper depends on the plating thickness at the time of electroforming, but is, for example, about 50 to 1000 μm.

<< Molded product of the present invention >>
Next, the molded product of the present invention will be described. The molded product of the present invention is obtained by performing injection molding using the above-mentioned stamper as a mold or a mold. Specifically, the molded product of the present invention can be obtained by processing the outer shape of a metal stamper, attaching it to a molding machine, and performing injection molding. Various resins can be used as the molding resin. For example, cyclic polyolefin, cycloolefin resin, polycarbonate, amorphous polyolefin, polydimethylsiloxane, phenol resin, epoxy resin, melamine resin, urea resin, unsaturated polyester resin, alkyd resin, polyurethane, polyimide, polyethylene, polypropylene, polyvinyl chloride, Polyvinyl ether, polystyrene, polyvinyl acetate, polyvinyl allylamine, polyvinyl alcohol, polytetrafluoroethylene, acrylonitrile resin, butadiene resin, styrene resin, acrylic resin, poly (meth) acrylate ester, polyamide, polyacetal, modified polyphenylene ether, polybutylene Terephthalate, polyethylene terephthalate, polyethyleneimine, polyphenylene sulfide Polysulfone, polyether sulfone, amorphous polyarylate, liquid crystal polymer, it is possible to use at least one or more polymers selected from the group consisting of polyetheretherketone and Poamidoimido.

  In the molded product of the present invention, a fine pattern C corresponding to the inverted shape of the fine pattern A of the stamper is formed, and on the fine pattern forming surface of the molded product, a concave portion is formed along the surrounding line surrounding the fine pattern C. It has a feature that a pattern is formed.

  As an example, a molded product 80 of the present invention is shown in FIG. The illustrated molded product 80 is a molded product obtained by molding using the stamper of FIG. As shown in the figure, a fine pattern C corresponding to the inverted shape of the fine pattern A of the stamper is formed on the fine pattern forming surface of the molded product 80, and a concave pattern 50 '' is formed so as to surround the fine pattern C. Is formed. The concave pattern 50 ″ is caused by the convex pattern 50 ′ of the stamper and corresponds to the inverted shape. That is, since the shape of the molded product is caused by the shape of the stamper used for the molding, various dimensions of the fine pattern C and the concave pattern of the molded product can be the same as the fine pattern A and the convex pattern of the stamper. This also means that the various dimensions of the fine pattern C and the concave pattern of the molded product can be the same as the fine pattern B and the concave pattern of the resist master.

  For example, the depth dimension of the recess 50 ″ as shown in FIG. 12 is preferably smaller than the depth dimension of each recess 60 ″ constituting the fine pattern C, for example, preferably 1 to 300 μm, more preferably 5 12 to 100 μm, more preferably about 5 to 40 μm, especially when a plurality of annular recesses 50 ″ are formed as the recess pattern of the molded product, as shown in FIG. It is preferable that the height dimension is larger than the depth dimension of the annular recess located on the outer side, that is, the depth dimension of each of the plurality of annular recesses 50 ″ gradually increases inward. It is preferable that, if viewed from the opposite side, it is preferable that the size gradually decreases toward the outside.

  Further, for example, the separation distance between the fine pattern C and the concave pattern is preferably about 0.2Lf "to 2Lf", more preferably about 0.5Lf "to 1.5Lf", and still more preferably about 0.8Lf "to 1.2Lf" ( Lf ": distance between the recesses 60"). Further, for example, the width dimension of the concave pattern of the molded product is preferably smaller than the width dimension of each recess constituting the fine pattern C, for example, 0.2Lf "to 2Lf", more preferably 0.2Lf "to 1.2. Lf ″, more preferably about 0.2Lf ″ to 0.8Lf ″.

  In addition, depending on the shape of the stamper (that is, depending on the shape of the resist master), the concave pattern of the molded product may be formed continuously, or at least a part thereof may be formed intermittently. . Furthermore, as a recessed part pattern of a molded product, a plurality of recessed parts having the same shape as or similar to each recess constituting the fine pattern C are formed along the surrounding line (that is, the surrounding line surrounding the fine pattern C). In such a case, the depth dimension of each recess provided along the inner envelope line is greater than the depth dimension of each recess provided along the outer envelope line. Preferably it is. In addition, the thickness of the molded product itself is, for example, about 100 μm to 50 mm.

  As mentioned above, although embodiment of this invention has been described, it has only illustrated the typical example of the application scope of this invention. Therefore, those skilled in the art will readily understand that the present invention is not limited thereto and various modifications can be made. For example, the following matters can be mentioned.

  In the modes shown in FIGS. 8 to 10, the shape of each recess of the recess pattern is “cylindrical”, but is not necessarily limited to such a mode. For example, the shape of each concave portion of the concave pattern may be “triangular prism shape”, “square prism shape”, or “pentagonal prism shape”.

  In the electroforming used in the stamper manufacturing method of the present invention, at least selected from the group consisting of Ni, Ag, Au, Bi, Cd, Co, Cr, Cu, Fe, In, Pd, Pt, Ru, Sn and Zn Although one or more kinds of metals can be used, it is not necessarily limited to such an embodiment. For example, alloy plating mainly composed of any one of Ag, Au, Bi, Cd, Co, Cr, Cu, Fe, In, Ni, Pd, Pt, Ru, Sn, and Zn, and PTFE (polytetrafluoroethylene) Etc. can be dispersed and taken into the plating film to produce a roll-shaped or flat plate stamper. In addition, Mn, Gd, Sm, W, Sb, Mo, P, B, S, etc. are made of a roll or flat plate alloy with increased hardness, lubricity and tenacity by actively incorporating them into the plating film. You can also make stampers.

  ● In this specification, the mode of obtaining a resist master by wet plating using a plating solution has been described. Even with plating, the effect of the present invention is not substantially changed.

  ● In this specification, an embodiment in which a resist master is obtained mainly by photolithography has been described. However, the present invention is not necessarily limited to such an embodiment, and any manufacturing method can be used as long as the same fine pattern and recess pattern can be formed. It may be adopted.

  ● In this specification, the aspect of obtaining a molded product mainly by injection molding has been described. However, the present invention is not necessarily limited to this aspect, and any molding method can be used as long as the same fine pattern and concave pattern can be formed. You may employ | adopt (for example, techniques, such as nanoimprint, may be applied).

It should be noted that the present invention has the following aspects.

[First embodiment]: having at least one fine pattern group on which concave and convex fine patterns are formed;
In a fine pattern group in which a boundary region exists between the fine pattern group and a peripheral region having a three-dimensionally different shape,
An aggregate structure of fine patterns in which a buffer pattern area for buffering a three-dimensional structure in stages is provided in the boundary area.
[Second Aspect]: The aggregate structure according to the first aspect, wherein the buffer pattern shape in the buffer pattern region is similar to the fine pattern.
[Third Aspect]: In the aggregate structure according to the first aspect, the size of each buffer pattern shape in the buffer pattern region is at least one of the width W, the length L, and the height H of the fine pattern shape. An aggregate structure of fine patterns characterized by being smaller than one.
[Fourth Aspect]: In the aggregate structure of the first aspect, the pitch (interval) of each buffer pattern in the buffer pattern region is equal to or within ± 30% of the individual pitch (interval) of the fine pattern. Aggregate structure of fine pattern characterized by
[Fifth Aspect]: In the aggregate structure of the first aspect, the pitch (interval) of each buffer pattern in the buffer pattern area is wider than the individual pitch (interval) of the fine pattern, and An aggregate structure of fine patterns characterized in that the shape is longer than the individual fine patterns.
[Sixth Aspect]: A fine pattern aggregate structure according to the first aspect, wherein the fine pattern region is surrounded by a buffer pattern.
[Seventh Aspect]: In the aggregate structure of the third aspect, when the height / depth of the fine pattern is H, the height / depth of the buffer pattern in the buffer pattern area is 1 / 3H to 1 / 5H. Aggregate structure of fine patterns characterized by changing (increase / decrease) in range.
[Eighth aspect]: In the aggregate structure of the first aspect, when buffering the fine pattern group A and the fine pattern group B for each buffer pattern in the buffer pattern region, the height and depth of the fine pattern group A When the height is Ha and the area is Sa, and the height / depth of the fine pattern group B is Hb and the area is Sb,
In the case of Ha> Hb, the height of the pattern of the buffer region is | (Ha−Hb) | / 4 under the condition of Ha−X / 4 × (Ha−Hb) (x = 1, 2, 3). If the area changes stepwise and Sa> Sb, {(Sa ^ 1/2) −x / 4 × [(Sa ^ 1/2) − (Sb ^ 1/2)]} ^ 2 (x = 1, 2, 3) A fine pattern aggregate structure having a buffer region in the middle of the pattern.
[Ninth aspect]: In the aggregate structure of the first aspect, cyclic polyolefin, cycloolefin resin, polycarbonate, amorphous polyolefin, polydimethylsiloxane, phenol resin, epoxy resin, melamine resin, urea resin, unsaturated polyester resin, alkyd Resin, polyurethane, polyimide, polyethylene, polypropylene, polyvinyl chloride, polystyrene, polyvinyl acetate, polytetrafluoroethylene, acrylonitrile resin, butadiene resin, styrene resin, acrylic resin, polyamide, polyacetal, modified polyphenylene ether, polybutylene terephthalate, polyethylene Terephthalate, polyphenylene sulfide, polysulfone, polyethersulfone, amorphous polyarylate, liquid crystal polymer, poly Set structure of a fine pattern, characterized in that it comprises at least one or more polymers selected from the group consisting of chromatography ether ether ketone and Poamidoimido.
[Tenth aspect]: The aggregate structure according to the first aspect, wherein the substrate serving as a base of the aggregate structure includes silicon or glass.

  In order to confirm the effect of the present invention, the following comparative examples and Examples 1 to 5 were carried out.

(Comparative Example 1)
As Comparative Example 1, a stamper was produced by a conventional method. First, “Registry Master” was created. Specifically, hexamethyldisilazane was applied to “a silicon wafer substrate having a smooth surface and polished to a mirror surface, and a thermal oxide film formed on the surface”, and the surface was 10 ° C. at 140 ° C. Baked for a minute. Next, a positive photoresist for thick film (PMER P-LA900PM manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied by a spin coating method to a thickness of 40 μm. Subsequently, a chromium mask (see FIG. 13) on which a fine well pattern was formed was placed on the resist, and contact exposure was performed with ultrahigh pressure UV light. The UV light source used for this exposure included g-line (436 nm), h-line (405 nm) and I-line (365 nm). After exposure, the substrate was immersed in a 3% solution of TMAH (tetramethylammonium hydroxide) and developed to obtain a resist master.

  In the resist master at this time, it was confirmed by a microscope that “deformation” did not occur in the boundary portion of the fine pattern.

  After forming a Ni sputtered film as a conductive film on the resist master, electroforming was performed. Specifically, nickel sulfamate plating solution was used, and pH buffered boric acid and Ni chloride for promoting the dissolution of anode Ni were added thereto. For adjusting the pH, sulfamic acid was used, and the pH was always adjusted to the range of 3.8 to 4.2. The temperature of the plating solution was 50 ° C., and the plating solution was always filtered. Electroforming was performed under such conditions.

  When the outer periphery of the fine pattern of the stamper (thickness 400 μm) obtained by the electroforming was observed by SEM, shape deformation (ie, “local deformation”) was observed near the boundary between the fine pattern and the periphery. It was.

  In addition, tests were conducted in which the current density during plating was adjusted to change the stress in various ways. “Plating film stress” was determined by a strip type stress measurement test using the same plating solution and setting the environment to the same conditions. The results are shown in Table 1.

Example 1
As Example 1, a stamper was produced according to the present invention. Specifically, a stamper was manufactured using a resist master as shown in FIGS.

More specifically, hexamethyldisilazane was applied to “a silicon wafer substrate having a smooth surface and polished in a mirror shape and having a thermal oxide film formed on the surface” at 140 ° C. Bake for 10 minutes. Next, a positive photoresist for thick film (PMER P-LA900PM manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied by a spin coating method to a thickness of 40 μm. Subsequently, a chrome mask on which a fine well pattern and a concave pattern surrounding the well pattern were formed was placed on the resist, and contact exposure was performed with ultra-high pressure UV light. In this embodiment, a halftone mask is used as the mask so that the height of the concave pattern can be adjusted. The UV light source used for exposure included g-line (436 nm), h-line (405 nm), and I-line (365 nm) as in Comparative Example 1. After exposure, the substrate was immersed in a 3% solution of TMAH (tetramethylammonium hydroxide) and developed to obtain a resist master.

  In the resist master at this time, it was confirmed by a microscope that “deformation” did not occur in the boundary portion of the fine pattern.

  After forming a Ni sputtered film as a conductive film on the resist master, electroforming was performed. Specifically, nickel sulfamate plating solution was used, and pH buffered boric acid and Ni chloride for promoting the dissolution of anode Ni were added thereto. For adjusting the pH, sulfamic acid was used, and the pH was always adjusted to the range of 3.8 to 4.2. The temperature of the plating solution was 50 ° C., and the plating solution was always filtered. Electroforming was performed under such conditions.

  When the outer periphery of the fine pattern of the stamper (thickness 400 μm) obtained by the electroforming was observed by SEM, in Example 1, the shape deformation (that is, “local deformation” near the boundary between the fine pattern and its peripheral part. )) Was not seen.

  As in Comparative Example 1, the presence / absence of “shape deformation” due to the magnitude of “plating film stress” was examined by adjusting the current density during plating and changing the stress in various ways. The results are shown in Table 1.

(Example 2)
As Example 2, a stamper was produced according to the present invention. Specifically, a stamper was manufactured using a resist master as shown in FIG. A stamper was obtained by substantially the same operation as in Example 1 except that the mask pattern used was changed.

  When the fine pattern outer peripheral part of the stamper obtained by the electroforming was observed by SEM, in Example 2, no shape deformation was observed in the vicinity of the boundary between the fine pattern and the peripheral part. Then, as in Comparative Example 1, the presence or absence of “shape deformation” due to the magnitude of the “plating film stress” was examined by adjusting the current density during plating and performing various tests to change the stress. The results are shown in Table 1.

(Example 3)
As Example 3, a stamper was produced according to the present invention. Specifically, a stamper was manufactured using a resist master as shown in FIG. A stamper was obtained by substantially the same operation as in Example 1 except that the mask pattern used was changed.

  When the fine pattern outer peripheral portion of the stamper obtained by the electroforming was observed by SEM, in Example 3, no shape deformation was observed in the vicinity of the boundary between the fine pattern and the peripheral portion. Then, as in Comparative Example 1, the presence or absence of “shape deformation” due to the magnitude of the “plating film stress” was examined by adjusting the current density during plating and performing various tests to change the stress. The results are shown in Table 1.

Example 4
As Example 4, a stamper was produced according to the present invention. Specifically, a stamper was manufactured using a resist master as shown in FIG. A stamper was obtained by substantially the same operation as in Example 1 except that the mask pattern used was changed.

  When the fine pattern outer peripheral portion of the stamper obtained by the electroforming was observed by SEM, in Example 4, no shape deformation was observed in the vicinity of the boundary between the fine pattern and the peripheral portion. Then, as in Comparative Example 1, the presence or absence of “shape deformation” due to the magnitude of the “plating film stress” was examined by adjusting the current density during plating and performing various tests to change the stress. The results are shown in Table 1.

  In Example 4, injection molding was performed by using the obtained stamper as a mold. Specifically, the outer shape of the metal stamper was processed and attached to a molding machine, and then injection molding was performed using a cycloolefin resin as a molding resin (resin temperature: 340 ° C., mold temperature: 125 ° C., injection (Speed: 300 mm / s, holding pressure: 70 MPa). The plate-shaped molded product of the present invention could be obtained by such injection molding. In such a molded product, there was no defect such as a flow mark, and a fine pattern was reliably transferred with high accuracy. As a result, it was found that the “projection pattern of the stamper (that is, the projection formed due to the recess pattern of the resist master)” does not affect the fine pattern.

(Example 5)
As Example 5, a stamper was produced according to the present invention. Specifically, a stamper was manufactured using a resist master as shown in FIG. A stamper was obtained by substantially the same operation as in Example 1 except that the mask pattern used was changed.

  When the fine pattern outer peripheral part of the stamper obtained by the electroforming was observed by SEM, in Example 5, the shape deformation located in the vicinity of the boundary between the fine pattern and the peripheral part was not observed. Then, as in Comparative Example 1, the presence or absence of “shape deformation” due to the magnitude of the “plating film stress” was examined by adjusting the current density during plating and performing various tests to change the stress. The results are shown in Table 1.

  In Table 1, when the plating stress is positive, it indicates tensile stress, and when negative, it indicates compressive stress. 0 is a condition presumed that there is almost no stress. In Table 1, “x” indicates that the deformation of the pattern was confirmed over almost the entire circumference. On the other hand, “◯” indicates no deformation, and “Δ” indicates that some deformation is observed in a part.

  As can be seen from Table 1, in Comparative Example 1, deformation was confirmed under almost all conditions. Since some deformation was observed even when the stress was almost zero, not only the stress of the entire plating film but also the stress of the peripheral part was changed by the three-dimensional structure of the fine pattern itself. It is guessed that there is no. On the other hand, in Examples 1 to 5, “no deformation” was obtained under almost all conditions, and it was confirmed that the “resist recess pattern” of the present invention is effective.

  When a plate-like molded article finally obtained from the stamper manufacturing method of the present invention (that is, a resin molded article obtained from the resist master and stamper of the present invention) is used, analysis, extraction or purification of a target substance, and cell separation Detection or screening can be performed (particularly, such treatment / operation can be carried out in large quantities at once). Therefore, the plate-shaped molded article of the present invention can be used for applications such as gene analysis, expression analysis, protein analysis, antigen / antibody reaction analysis or cell analysis.

DESCRIPTION OF SYMBOLS 10 Board | substrate 20 Resist film 30 Mask 40 Resist master 50 Recessed pattern which comprises stress buffer area | region 60 Each hollow which comprises fine pattern B 70 Stamper 50 'Convex pattern 80 Molded product 50''Recessed pattern

Claims (10)

A method for manufacturing a stamper, comprising:
(I) a step of preparing a resist master on which a fine pattern B corresponding to the inverted shape of the fine pattern A of the stamper is formed; and (ii) carrying out electroforming using the resist master as a matrix, Comprising the step of obtaining a stamper on which the pattern A is formed,
On the fine pattern formation surface of the resist master prepared in the step (i), a concave pattern is formed along an encircling line surrounding the fine pattern B,
In the step (ii), the stamper manufacturing method is characterized in that stress that may occur during the electroforming is relieved by the recess pattern. A resist master used for manufacturing a stamper,
A fine pattern B corresponding to the inverted shape of the fine pattern A of the stamper is formed,
A resist master, wherein a concave pattern is formed along an encircling line surrounding the fine pattern B on the fine pattern forming surface of the resist master.   The resist master according to claim 2, wherein an annular recess surrounding the fine pattern B is formed as the recess pattern.   The resist master according to claim 3, wherein at least two annular recesses are formed.   The depth dimension of the annular recess located on the inner side is greater than the depth dimension of the annular recess located on the outer side in the at least two annular recesses. Registration master.   The resist master according to claim 3, wherein at least a part of the annular recess is formed intermittently.   3. The resist master according to claim 2, wherein a plurality of recesses having the same shape as or similar to each recess constituting the fine pattern B are formed as the recess pattern along the surrounding line. A plurality of the recesses are formed along at least two of the surrounding lines,
The depth dimension of each of the recesses provided along the inner envelope line is greater than the depth dimension of each of the recesses provided along the outer envelope line. The resist master according to claim 7, wherein the resist master is characterized. A stamper formed by performing electroforming using the resist master according to any one of claims 2 to 8 as a matrix,
A fine pattern A corresponding to the inverted shape of the fine pattern B of the resist master is formed,
The stamper is characterized in that a convex pattern is formed along an encircling line surrounding the fine pattern A on the fine pattern forming surface of the stamper. A molded product obtained by molding using the stamper according to claim 9 as a mold,
A fine pattern C corresponding to the inverted shape of the fine pattern A of the stamper is formed,
The molded product is characterized in that a concave pattern is formed along an encircling line surrounding the fine pattern C on the fine pattern forming surface of the molded product.