JP2011164451A - Electro-optical device and method of manufacturing the same, and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve the quality of a display image by improving a contrast ratio of the display image while allowing the reduction in manufacturing costs, with respect to an electro-optical device. <P>SOLUTION: In the electro-optical device, a pixel electrode (9), conductive layers (6, 7, 11, and 71), and an antireflective film (80) formed so as to cover at least a part of end surfaces of the conductive layers with a light-shielding material having higher light reflectance than the conductive layers are provided on a substrate (10). The antireflective film includes a front end portion being contact with or facing a ground surface forming, on the substrate, a foundation of the conductive layers, and a body portion connecting with the front end portion and is formed so that a film thickness of the front end portion is smaller than that of the body portion and has a surface thereof curved or inclined with respect to the end surfaces of the conductive layers. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an electro-optical device such as a liquid crystal device in which a thin film transistor (hereinafter referred to as “TFT (Thin Film Transistor)” as appropriate) is provided as a switching element on an element substrate for each pixel, a manufacturing method thereof, and the electro-optical device. The present invention relates to a technical field of an electronic apparatus including the apparatus, such as a liquid crystal projector.

  This type of electro-optical device includes a pixel electrode, a scanning line for selectively driving the pixel electrode, a data line, and a TFT as a pixel switching element on a substrate, and is configured so as to be capable of active matrix driving. Is done. In such an electro-optical device, for the purpose of suppressing or preventing a decrease in contrast of a display image due to leakage of light source light from a gap between adjacent pixel electrodes, a gap between pixel electrodes is used. By forming the light shielding film, a non-opening region (that is, a region where light contributing to display is not emitted for each pixel) is formed. However, a part of the light source light is refracted, scattered, or reflected by elements, wirings, etc. formed in the electro-optical device, so that it leaks from the non-opening region and lowers the contrast ratio of the display image. .

  Patent Documents 1 and 2 disclose techniques for improving the contrast ratio of a display image by providing a retardation film and an optical compensation plate, respectively. Patent Document 3 discloses a technique for improving the contrast ratio of a display image by forming a cross-section of a conductive pattern on a substrate in a reverse taper shape to prevent reflection on the side wall of the conductive pattern.

Japanese Patent Laid-Open No. 10-10513 JP 2008-256958 A JP 2009-31373 A

  However, in the technologies disclosed in Patent Documents 1 and 2, it is necessary to incorporate a retardation film and an optical compensator into the liquid crystal panel, and the configuration of the liquid crystal device becomes complicated, so that the manufacturing method becomes technically difficult. Or increase the manufacturing cost. Further, the technique disclosed in Patent Document 3 involves technical difficulties when forming the cross section of the conductive pattern on the substrate in an inversely tapered shape. Specifically, it is necessary to adjust the etching angle when forming the conductive pattern in an inversely tapered shape to an optimal value in order to minimize light leakage from the non-opening region. Since it differs depending on the electro-optical device, the selection is technically difficult. Further, if the conductive pattern is to be etched in a reverse taper shape, the etching process becomes complicated. Furthermore, the reverse taper shape may adversely affect the quality of the film formed on it or the attachment. Thus, the above technique has practical problems.

  Furthermore, in order to make such a structure for suppressing the occurrence of leakage light, to increase the number of processes when manufacturing the vicinity of the conductive pattern on the substrate, to add a complicated advanced process such as a patterning process, It is basically preferable to avoid enlarging the laminated structure in the vicinity of the conductive pattern on the substrate from the viewpoint of manufacturing cost and the like. That is, regardless of which measure is taken, it is desirable to reduce manufacturing costs, improve manufacturing yield, improve reliability while avoiding complicated device configurations, and the like.

  The present invention has been made in view of the above-described problems, for example, and can be manufactured relatively easily, and an electro-optical device capable of displaying a high-quality image by improving the contrast ratio of the display image, and its It is an object to provide a manufacturing method and an electronic apparatus using such an electro-optical device.

  In order to solve the above problems, an electro-optical device according to the present invention has a pixel electrode on a substrate, a wiring for supplying a signal to the pixel electrode, a conductive layer constituting at least a part of the electrode and the electronic element, An antireflection film formed so as to cover at least a part of the end face of the conductive layer with a light-shielding material having a light reflectance lower than that of the conductive layer, and the antireflection film comprises (i) on the substrate And (ii) a main body portion connected to the front end portion, and a film thickness of the front end portion is smaller than a film thickness of the main body portion. In addition, the surface is formed to be curved or slanted as compared with the end face.

  According to the electro-optical device of the present invention, during the operation, for example, supply of an image signal from a data line formed on the substrate to the pixel electrode is controlled, and so-called active matrix image display is possible. The image signal is generated at a predetermined timing by turning on / off a transistor, which is a switching element electrically connected between the data line and the pixel electrode, according to a scanning signal supplied from the scanning line. To the pixel electrode via the transistor. The pixel electrode is a transparent electrode made of a transparent conductive material such as ITO (Indium Tin Oxide), for example, and a plurality of pixel electrodes are provided in a matrix form in a region to be a display region on the substrate corresponding to the intersection of the data line and the scanning line. It is done.

  The scanning line, the data line, and the transistor are typically provided in a non-opening area, not an opening area of each pixel, in the pixel area so as not to hinder display.

  Here, the “pixel area” means not the area of each pixel but the entire area in which a plurality of pixels are arranged in a matrix, and is also called “image display area” or “display area”. “Aperture region” refers to a region where an electro-optic operation by an electro-optic element or an electro-optic material is actually performed in each pixel, such as a region where light that actually contributes to display is emitted for each pixel.

  In addition, the “non-opening region” according to the present invention is a region that separates the opening regions of each pixel from each other, such as a region where light that contributes to display is not emitted for each pixel. An area where electro-optical operation is not actually performed. The non-opening region is formed, for example, on the substrate as a region where at least a part of the data line or the scanning line is formed from a light-shielding film having a light-shielding property and light incident on each pixel can be shielded by such a light-shielding film It is defined to surround the open area. In addition to or in place of this, the non-opening region may be a light shielding film having other functions such as a capacitor electrode, a light shielding film built in a substrate dedicated to light shielding, a black matrix formed on a substrate or a counter substrate, It may be defined at least partially or redundantly by a black mask or the like.

  The conductive layer constitutes at least a part of a wiring, an electrode, and an electronic element for supplying a signal to the pixel electrode, for example, for performing an electro-optical operation in the pixel region where the pixels are arranged. The conductive layer may be, for example, a data line or a scanning line, or may be configured as one of a pair of capacitor electrodes that form an additional capacitor for improving the voltage holding characteristics of the pixel electrode. The conductive layer is disposed in the non-opening region at least partially or entirely in a plan view. The conductive layer may be formed of a light shielding film that reflects or absorbs light, and may define the non-opening region at least partially or redundantly.

  The antireflection film is formed so as to cover at least a part of the end surface of the conductive layer with a material having a light reflectance lower than that of the conductive layer, for example, in the intersection region, thereby improving the contrast ratio of the display image. be able to.

  The antireflection film is, for example, a first extending in the first direction among the non-opening regions in which the conductive layer is disposed in a plan view on the substrate and the opening regions of the pixels are separated from each other. In the intersection region where the region and the second region extending along the second direction intersecting the first direction intersect each other, the conductive layer is formed so as to cover at least a part of the end face of the conductive layer. Alternatively, in addition to or instead of the intersection region, an antireflection film may be formed so as to cover at least a part of the end face of the conductive layer in a non-opening region other than the intersection region.

  Here, the “intersection region in the non-opening region” refers to the first region extending along the first direction and the second direction intersecting the first direction among the non-opening regions that separate the opening regions for each pixel. The second region extending along the region intersects each other.

  If no measures are taken in the intersecting region, light leakage is likely to occur because the light source light is reflected by the end surfaces of the conductive layers arranged in the intersecting region. When such light leakage occurs, the contrast of the display image is lowered, and the image quality is lowered.

  For example, the light reflected from the end face is mixed with display light that passes through the opening region corresponding to the image signal, or enters the thin film transistor in the non-opening region to cause light leakage, thereby opening the aperture. Light leakage in the region can occur to a degree that cannot be ignored.

  However, the electro-optical device according to the present invention is formed of a material having a low light reflectance so as to cover the end surface of the conductive layer, for example, to prevent or suppress the light source light from being reflected by the end surface of the conductive layer in the intersection region. By providing the antireflection film, the occurrence of leakage light can be suppressed.

  The antireflection film is formed of a material having a light reflectance lower than that of the conductive layer. For example, when the conductive layer is formed of aluminum, the antireflection film may be formed of a material having a lower light reflectance than aluminum such as TiN (titanium nitride) or W (tungsten). In other words, even if the conductive layer is formed of a material having a high light reflectance, it is possible to reduce the reflection of the light source light at the end face according to the low reflectance of the antireflection film.

  In addition, according to the electro-optical device according to the invention, the antireflection film has a film thickness of the tip portion that contacts or faces the base surface smaller than the film thickness of the main body portion, and the surface thereof is a conductive layer. It is curved or slanted compared to the end face. Therefore, for example, compared to the case where the end surface of the conductive layer is covered with the base surface that spreads beside it, in other words, the antireflection film that is slightly larger when viewed in plan on the substrate is made into a hat-like shape with a wrinkle, Compared with the case where the end face of the conductive layer is coated with a great deal of redundancy, it is possible to avoid the enlargement of the laminated structure.

  Further, the antireflection film having a curved or oblique surface is inclined to enter the end face by an amount corresponding to an increase in the surface area as compared with the case of simply using the antireflection film having a flat surface. Light can be absorbed with higher efficiency. In other words, the light absorption of the antireflection film is based on the area of the end face (that is, the surface area of the end face) by the amount that the surface of the antireflection film is formed to have a curved or oblique surface on the end face. Capacity will be increased. In addition, with such an antireflection film having a curved or slanted surface, it is possible to deflect light that is reflected without being absorbed, at least partially, in a direction not included in the display light. Become.

  In particular, such an antireflection film can be formed without using unique patterning by etching back using anisotropic etching as in the manufacturing method described later, and is easy to manufacture. Manufactured as a highly reliable film. In other words, the electro-optical device can be manufactured as a highly reliable device with low manufacturing cost.

  Note that such an antireflection film may be formed so as to cover the entire end face in the intersection region, for example. That is, the tip portion may extend along the end surface to a height that just contacts the base surface (or to a height that does not just contact). Furthermore, the antireflection film may extend slightly even on the portion of the base surface located beside the conductive layer.

  As described above, in the electro-optical device according to the present invention, the generation of leakage light in the display region is suppressed by covering the end surface of the conductive layer with the antireflection film in the crossing region or the non-opening region other than the crossing region. Can do. In addition, by adopting an antireflection film having a special shape, an electro-optical device capable of realizing a high-quality image display having a high contrast ratio can be realized relatively easily or at a relatively low cost. it can.

  Note that the end surfaces of the conductive layer may be covered with the same antireflection film in the crossing region and the non-opening region other than the crossing region, or may be covered with antireflection films different in material and thickness. Alternatively, it is optional to cover the conductive layer with an antireflection film that is the same as or different from the end surface in the intersecting region on the surface other than the end surface.

  In one aspect of the electro-optical device of the present invention, the antireflection film is formed so as to cover the conductive layer from the upper surface side in addition to covering the end face.

  According to this aspect, when viewed in plan on the substrate, the antireflection film is formed on the conductive layer so as to be wider than at least the conductive layer. Thus, the reflection of the light source light at the upper surface of the conductive layer can be prevented with certainty. Manufacture is also facilitated as the alignment margin increases. In particular, the light source light incident on the upper surface of the conductive layer becomes stray light in the electro-optical device by being reflected on the surface of the conductive layer, and leaked from the end surface of the conductive layer by being emitted from the display surface. Similarly, it may cause a reduction in the contrast ratio of the display image. In this aspect, it is possible to prevent the light source light from being reflected on the end face and the upper face of the conductive layer, and to improve the contrast ratio of the display image.

  Alternatively, in another aspect of the electro-optical device according to the aspect of the invention, the antireflection film is partially or not provided on the upper surface of the conductive layer.

  According to this aspect, since the antireflection film is not formed partially or at all on the upper surface of the conductive layer, it is possible to prevent the laminated structure including the conductive layer from being enlarged in the thickness direction. The antireflection film formed on the end face of the conductive layer can reduce the reflection of the light source light on the end face of the conductive layer while maintaining a more compact overall structure. Moreover, such an electro-optical device can be formed without using unique patterning by etching back using anisotropic etching as will be described later, so that the manufacturing cost can be suppressed and the reliability is high. Manufactured as a membrane. In other words, the electro-optical device can be manufactured as a highly reliable device with low manufacturing cost.

  In another aspect of the electro-optical device of the present invention, the antireflection film is not formed on the base surface.

  According to this aspect, the tip end portion does not extend to the base surface, and a little area that is not covered by the tip end portion is left on the root side of the end face, or the tip end portion at the root of the end face The tip of the just touches the ground surface. Then, it is advantageous to surely avoid the enlargement of the laminated structure. On the other hand, depending on the ratio of the end surface covered with the antireflection film, the adverse effects due to the end surface reflection can be reduced accordingly.

  In another aspect of the electro-optical device of the invention, the conductive layer includes a first conductive layer formed on a lower layer side than the pixel electrode, and a second conductive layer formed on a lower layer side than the first conductive layer. The antireflection film is formed so as to cover respective end surfaces of the first conductive layer and the second conductive layer.

  According to this aspect, the conductive layer is composed of a plurality of conductive layers including the first conductive layer and the second conductive layer. In this case, in order to prevent leakage light from being generated by the light source light being reflected by the end surfaces of the first conductive layer and the second conductive layer, for example, in the non-opening region other than the cross region or the cross region, the first conductive layer An antireflection film is formed on the end surface of each of the second conductive layers. That is, for example, when a plurality of conductive layers cross three-dimensionally in an intersecting region, an antireflection film is provided on the end face of each conductive layer to prevent the occurrence of leakage light and to increase the contrast ratio. Can be increased.

  Note that an electronic element such as a thin film transistor, another wiring or electrode, an interlayer insulating film, or the like may be appropriately constructed between the first and second conductive layers.

  In the aspect including the first conductive layer and the second conductive layer described above, the first conductive layer and the second conductive layer extend along a second direction intersecting with the first direction and the first direction, respectively. The non-opening region that is the data line and the scanning line and separates the opening region for each pixel on which the pixel electrode is disposed may be at least partially defined by the data line and the scanning line.

  With this configuration, the data line and the scanning line extend along the first direction and the second direction intersecting each other, thereby defining the non-opening region at least partially. In this case, since the data line and the scanning line intersect three-dimensionally in the intersection region where the data line and the scanning line intersect with each other, an antireflection film is formed on the end surface of the data line and the scanning line in the intersection region. Therefore, it is possible to prevent leakage light.

  In another aspect of the electro-optical device according to the aspect of the invention, the first region extending along the first direction and the first direction among the non-opening regions that separate the opening regions of the pixels in which the pixel electrodes are disposed from each other. At least part of the end face of the conductive layer in the first region and the second region excluding the intersecting region where the second region extending along the second direction intersecting with each other intersects the conductive region in the intersecting region. The antireflection film provided on the end face of the layer extends and is provided.

  According to this aspect, in addition to the intersecting region, a non-opening region other than the intersecting region (for example, the first region extending along the first direction in the non-opening region, or extending along the second direction) The antireflection film is formed at least partially or preferably entirely on the end face of the conductive layer in the second region). Leakage light that causes a decrease in the contrast of the display image is likely to occur mainly in the intersection region, but may occur in other regions as well. Further, depending on the structure of the upper and lower light shielding films and the like, the end face reflection of the conductive layer in the non-opening region other than the intersecting region may become a problem at least as much as the intersecting region. In this aspect, since the leakage light generated in the non-opening region other than the intersecting region can be effectively prevented, an electro-optical device with a higher contrast ratio and capable of displaying a high-quality image can be realized.

  In order to solve the above problems, an electronic apparatus according to the present invention includes the above-described electro-optical device according to the present invention (including various aspects thereof).

  According to the electronic apparatus of the present invention, since the electro-optical device according to the present invention described above is provided, a projection display device capable of displaying a high-quality image, a television, a mobile phone, an electronic notebook, Various electronic devices such as a word processor, a viewfinder type or a monitor direct-view type video tape recorder, a workstation, a videophone, a POS terminal, and a touch panel can be realized. Further, as the electronic apparatus of the present invention, for example, an electrophoretic device such as electronic paper can be realized.

  In order to solve the above-described problems, a first manufacturing method of an electro-optical device according to the present invention includes a pixel electrode and at least a part of a wiring for supplying a signal to the pixel electrode, an electrode, and an electronic element on a substrate. An electro-optical device for manufacturing an electro-optical device comprising: a conductive layer to be configured; and an antireflection film formed so as to cover at least a part of an end surface of the conductive layer with a light-shielding material having a light reflectance lower than that of the conductive layer. A method for manufacturing an apparatus, the method comprising: forming a conductive material film constituting the conductive layer on one surface of a base surface on which the conductive layer is formed on the substrate; and partially forming the antireflection film. Forming a first antireflective material film that can be configured on one surface of the formed conductive material film, and the conductive material film and the first antireflection film so as to have a planar pattern of the conductive layer. Patterning of conductive material films On the surface of the first antireflective material film left on the conductive layer which is the patterned conductive material film and on the surface of the base surface exposed from the side of the part. A step of forming a second antireflective material film constituting at least a portion covering the end face of the antireflective film, and directing the first and second antireflective material films along the end face. Etching back by anisotropic etching.

  According to the first manufacturing method of the electro-optical device according to the present invention, first, on the base surface, before and after the film forming process of various wirings, various electrodes, various electronic elements, various interlayer insulating films and the like on the substrate. A conductive material film such as aluminum is formed on one surface, for example, by sputtering, vapor deposition, or the like. Further, a first antireflective material film such as TiN or W is formed on the upper surface by, for example, sputtering or vapor deposition. In the present invention, “one surface” means one surface, but one surface or one surface is sufficient based on the conductive layer to be formed. In other words, it means the entire surface of the conductive layer regardless of the presence or absence of the conductive layer, and does not mean that the entire surface of the substrate must be formed.

  Subsequently, the conductive material film and the first antireflective material film are patterned together (in other words, at the same time or simultaneously), for example, by patterning involving photolithography and etching, and both have a planar pattern of the conductive layer. become. The etching here is performed as anisotropic etching or isotropic etching such as dry etching or wet etching.

  Subsequently, a second antireflective material film such as TiN or W is formed on one surface thereof by, for example, sputtering or vapor deposition. The second antireflective material film may be the same material film as the first antireflective material film, or may be a different material film.

  Subsequently, the first and second antireflection material films formed in this way have directivity along the end surface of the conductive layer (typically, directivity in a direction perpendicular to the substrate surface). For example, etching back or whole surface etching back is performed by anisotropic etching such as dry etching. In particular, if the portion of the second antireflective material film that is not on the first antireflective material film (in other words, not on the conductive layer in plan view) is etched back until it is completely removed. A highly reliable antireflection film can be formed on the end face of the conductive layer from the second antireflection material film.

  In addition, the first antireflective material film having the same planar pattern as the conductive layer can be partially or entirely left on the conductive layer. Alternatively, the first antireflection material film having the same plane pattern as the conductive layer can be partially or completely removed on the conductive layer by etch back.

  In any case, the antireflection film composed of the second antireflection material film remaining on the end face partially or completely covers the end face of the conductive layer in, for example, the intersection area or the non-opening area other than the intersection area. It will be. In this case, in particular, since the directivity is locally disturbed by the etching gas or the etchant striking the base surface at the tip of the flow, the antireflection film is formed on the tip portion remaining close to the base surface. The film is formed so that the film thickness is thinner than the film thickness of the main body portion left on the upstream side, and the surface is curved or inclined as compared with the end face of the conductive layer.

  As a result, the antireflection film having the special shape described above can be formed on the end face of the conductive layer while employing a relatively simple process called etch back. That is, the above-described electro-optical device according to the present invention can be manufactured relatively easily. It is also possible to reduce the manufacturing cost.

  In order to solve the above problems, a second method for manufacturing an electro-optical device according to the present invention includes a pixel electrode and at least a part of a wiring for supplying a signal to the pixel electrode, an electrode, and an electronic element on a substrate. An electro-optical device for manufacturing an electro-optical device comprising: a conductive layer to be configured; and an antireflection film formed so as to cover at least a part of an end surface of the conductive layer with a light-shielding material having a light reflectance lower than that of the conductive layer. A method for manufacturing an apparatus, comprising: forming a conductive material film constituting the conductive layer on one surface of a base surface on which the conductive layer is formed on the substrate; and a planar pattern of the conductive layer As described above, the antireflection is applied to the surface of the conductive layer that is the patterned conductive material film and on the surface of the base surface that is exposed from the side of the conductive layer. Make up membrane Forming an antireflective material layer, the anti-reflective material film, and a step of etching back by anisotropic etching having directivity along said end surface.

  According to the second manufacturing method of the electro-optical device according to the present invention, first, on the base surface, before and after the film forming process of various wirings, various electrodes, various electronic elements, various interlayer insulating films and the like on the substrate. A conductive material film such as aluminum is formed on one surface, for example, by sputtering, vapor deposition, or the like.

  Subsequently, the conductive material film is patterned, for example, by patterning involving photolithography and etching, to have a planar pattern of the conductive layer.

  Subsequently, an antireflection material film such as TiN or W is formed on one surface of these by, for example, sputtering or vapor deposition.

  Subsequently, the thus formed antireflection material film has directivity along the end surface of the conductive layer (typically, directivity in a direction perpendicular to the substrate surface), such as dry etching. Etching back or entire surface etching back is performed by anisotropic etching. In particular, if etching back is performed until the portion of the antireflection material film that is not on the conductive layer and the portion that is on the upper surface of the conductive layer is completely removed, only the end surface of the conductive layer is highly reliable. The antireflection film can be formed from an antireflection material film.

  In any case, the antireflection film composed of the antireflection material film left on the end face is intended to partially or completely cover the end face of the conductive layer in, for example, the intersection area or the non-opening area other than the intersection area. Become. In this case, in particular, since the directivity is locally disturbed by the etching gas or the etchant striking the base surface at the tip of the flow, the antireflection film is formed on the tip portion remaining close to the base surface. The film is formed so that the film thickness is thinner than the film thickness of the main body portion left on the upstream side, and the surface is curved or inclined as compared with the end face of the conductive layer.

  As a result, the antireflection film having the special shape described above can be formed on the end face of the conductive layer while employing a relatively simple process called etch back. That is, the above-described electro-optical device according to the present invention can be manufactured relatively easily. It is also possible to reduce the manufacturing cost.

  The effect | action and other gain of this invention are clarified from the form for implementing invention demonstrated below.

It is a top view which shows the whole structure of the liquid crystal device which concerns on this embodiment. It is HH 'sectional drawing of FIG. It is a circuit diagram which shows the electrical structure of the liquid crystal device which concerns on this embodiment. FIG. 6 is a schematic plan view transparently showing a positional relationship between electrodes and wirings arranged for performing an electro-optical operation in an image display region of the liquid crystal device according to the embodiment. FIG. 5 is a cross-sectional view taken along line AA ′ in FIG. 4. It is a fragmentary sectional view which expands and shows the part of the anti-reflective film in FIG. In the liquid crystal device according to the present embodiment, it is a three-dimensional schematic diagram visually showing the positional relationship between a data line and a scanning line in a region where an antireflection film is formed. In the liquid crystal device which concerns on a 1st modification, it is a three-dimensional schematic diagram which shows visually the positional relationship with respect to a data line and a scanning line of the area | region in which an antireflection film is formed. It is sectional drawing with the same meaning as FIG. 5 in the liquid crystal device which concerns on a 2nd modification. It is the fragmentary sectional view which expands and shows the part of the anti-reflective film in FIG. It is process drawing (the 1) which concerns on 1st Embodiment of a manufacturing method. It is process drawing (the 2) which concerns on 1st Embodiment of a manufacturing method. It is process drawing which concerns on 2nd Embodiment of a manufacturing method. It is an example of the electronic device to which the liquid crystal device according to the present embodiment is applied.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, a driving circuit built-in type TFT active matrix driving type liquid crystal device, which is an example of the electro-optical device of the present invention, is taken as an example.

<1. Liquid crystal device>
First, the overall configuration of the liquid crystal device according to the present embodiment will be described with reference to FIGS. 1 and 2.

  FIG. 1 is a schematic plan view showing a configuration of a liquid crystal device when the TFT array substrate 10 is viewed from the counter substrate 20 side together with each component formed thereon, and FIG. 2 is a plan view of FIG. It is HH 'sectional drawing.

  1 and 2, the liquid crystal device according to the present embodiment includes a TFT array substrate 10 and a counter substrate 20 that are arranged to face each other. The TFT array substrate 10 is, for example, a transparent substrate such as a quartz substrate or a glass substrate, or a silicon substrate. The counter substrate 20 is also a substrate made of the same material as the TFT array substrate 10, for example. A liquid crystal layer 50 is sealed between the TFT array substrate 10 and the counter substrate 20, and the TFT array substrate 10 and the counter substrate 20 are sealed around the image display region 10a where the electro-optical operation is performed. They are bonded to each other by a sealing material 52 provided in the region.

  The sealing material 52 is made of, for example, an ultraviolet curable resin, a thermosetting resin, or the like for bonding the two substrates, and is applied on the TFT array substrate 10 in the manufacturing process and then cured by ultraviolet irradiation, heating, or the like. It is. Further, for example, in the sealing material 52, a gap material 56 such as a glass fiber or a glass bead for dispersing the distance (inter-substrate gap) between the TFT array substrate 10 and the counter substrate 20 to a predetermined value is dispersed.

  A light-shielding frame light-shielding film 53 that defines the frame area of the image display area 10a is provided on the counter substrate 20 side in parallel with the inside of the seal area where the sealing material 52 is disposed. However, part or all of the frame light shielding film 53 may be provided as a built-in light shielding film on the TFT array substrate 10 side.

  A data line driving circuit 101, a sampling circuit 7, a scanning line driving circuit 104, and an external circuit connection terminal 102 are formed in the peripheral area located around the image display area 10 a on the TFT array substrate 10.

  In the peripheral region on the TFT array substrate 10, a data line driving circuit 101 and a plurality of external circuit connection terminals 102 are provided along one side of the TFT array substrate 10 on the outer peripheral side of the seal region.

  Further, a region located on the inner side of the seal region in the peripheral region on the TFT array substrate 10 is covered with the frame light shielding film 53 along one side of the image display region 10 a along one side of the TFT array substrate 10. A sampling circuit 7 is arranged.

  The scanning line driving circuit 104 is provided along two sides adjacent to one side of the TFT array substrate 10 so as to be covered with the frame light shielding film 53. Further, in order to electrically connect the two scanning line driving circuits 104 provided on both sides of the image display region 10a in this way, the TFT array substrate 10 is covered with the frame light shielding film 53 along the remaining side. A plurality of wirings 105 are provided.

  In the peripheral region on the TFT array substrate 10, vertical conduction terminals 106 are disposed in regions facing the four corners of the counter substrate 20, and vertical conduction is provided between the TFT array substrate 10 and the counter substrate 20. A material is provided corresponding to the vertical conduction terminal 106 and electrically connected to the terminal 106.

  In FIG. 2, on the TFT array substrate 10, a laminated structure is formed in which wirings such as TFTs for pixel switching, scanning lines, and data lines are formed. In the image display area 10a, pixel electrodes 9 are provided in a matrix form on the upper layer of wiring such as pixel switching TFTs, scanning lines, and data lines. The pixel electrode 9 is formed as a transparent electrode made of an ITO film. An alignment film 16 is formed on the pixel electrode 9.

  On the other hand, a light shielding film 23 is formed on the surface of the counter substrate 20 facing the TFT array substrate 10. The light shielding film 23 is formed of, for example, a light shielding metal film or the like, and is patterned, for example, in a lattice shape in the image display region 10a on the counter substrate 20. A counter electrode 21 made of an ITO film is formed on the light shielding film 23 (below the light shielding film 23 in FIG. 2), for example, in a solid shape so as to face the plurality of pixel electrodes 9, and further on the counter electrode 21 ( An alignment film 22 is formed on the lower side of the counter electrode 21 in FIG.

  The liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several types of nematic liquid crystals are mixed, and takes a predetermined alignment state between the pair of alignment films. A liquid crystal storage capacitor is formed between the pixel electrode 9 and the counter electrode 21 by applying a voltage to each of the liquid crystal devices when the liquid crystal device is driven.

  Although not shown here, on the TFT array substrate 10, in addition to the data line driving circuit 101 and the scanning line driving circuit 104, a plurality of data lines are precharged at a predetermined voltage level prior to the image signal. A precharge circuit to be supplied, an inspection circuit for inspecting the quality, defects, etc. of the liquid crystal device during manufacture or at the time of shipment may be formed.

  Next, the electrical configuration of the image display area of the liquid crystal device according to the present embodiment will be described with reference to FIG. FIG. 3 is an equivalent circuit diagram of various elements, wirings, and the like in a plurality of pixels formed in a matrix forming the image display area of the liquid crystal device according to this embodiment.

  In FIG. 3, a pixel electrode 9 and a pixel switching TFT 30 are formed in each of a plurality of pixels formed in a matrix that forms the image display region 10a. The TFT 30 is electrically connected to the pixel electrode 9, and performs switching control of the pixel electrode 9 when the liquid crystal device according to the present embodiment operates. The data line 6 to which the image signal is supplied is electrically connected to the source region of the TFT 30. Image signals S1, S2,..., Sn to be written to the data lines 6 may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6. Good.

  The scanning line 11 is electrically connected to the gate of the TFT 30, and the liquid crystal device according to the present embodiment applies the scanning signals G1, G2,..., Gm to the scanning line 11 in a pulsed manner at a predetermined timing. It is configured to apply in a line sequential order. The pixel electrode 9 is electrically connected to the drain of the TFT 30, and the image signal S1, S2,..., Sn supplied from the data line 6 is obtained by closing the switch of the TFT 30 serving as a switching element for a certain period. It is written at a predetermined timing. A predetermined level of image signals S1, S2,..., Sn written to the liquid crystal via the pixel electrode 9 is constant between the counter electrode 21 (see FIG. 2) formed on the counter substrate 20 (see FIG. 2). Hold for a period.

  The liquid crystal constituting the liquid crystal layer 50 (see FIG. 2) modulates light and enables gradation display by changing the orientation and order of the molecular assembly depending on the applied voltage level. In the normally white mode, the transmittance for incident light is reduced according to the voltage applied in units of each pixel, and in the normally black mode, the light is incident according to the voltage applied in units of each pixel. The transmittance for light is increased, and light having a contrast corresponding to an image signal is emitted from the liquid crystal device as a whole.

  In order to prevent the image signal held here from leaking, a storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 9 and the counter electrode 21 (see FIG. 2). Has been.

  Next, with reference to FIGS. 4 to 6, a specific stacked structure in the image display region 10a of the liquid crystal device according to the present embodiment will be described in detail.

  FIG. 4 is a schematic plan view transparently showing the positional relationship between electrodes and wirings arranged for performing an electro-optical operation in the image display region 10a of the liquid crystal device according to the present embodiment. FIG. 5 is a cross-sectional view taken along line AA ′ of FIG. FIG. 6 is a partial cross-sectional view showing an enlarged portion of the antireflection film in FIG. In FIGS. 4 to 6, the scales of the layers and members are different from each other so that the layers and members can be recognized on the drawings. Further, as will be described later, an antireflection film 80 is formed on the end surfaces of the data line 6, the scanning line 11, and the relay layer 7 in the intersection region of the data line 6 and the scanning line 11 defining the non-opening region. In FIG. 4, the display of the antireflection film 80 is omitted in order to display the positional relationship between the respective electrodes and wirings in an easy-to-understand manner. Refer to FIGS. 5 and 6 for the detailed structure and arrangement of the antireflection film 80.

  As shown in FIGS. 4 and 5, the scanning lines 11 and the data lines 6 are arranged on the TFT array substrate 10 along the X direction and the Y direction, respectively, and the data lines 6 and the scanning lines 11 intersect. The TFT 30 (that is, the semiconductor layer 30a and the gate electrode 30b) is formed in the vicinity.

  The scanning line 11 is formed of a light-shielding conductive material, for example, W (tungsten), Ti (titanium), TiN (titanium nitride), and the like, and includes the semiconductor layer 30a of the TFT 30 from the semiconductor layer 30a. Widely formed. Since the scanning line 11 is arranged on the lower layer side than the semiconductor layer 30a, the scanning line 11 is formed wider than the semiconductor layer 30a of the TFT 30 in this way, thereby reflecting the back surface of the TFT array substrate 10 or a double-plate type. The channel region 30b of the TFT 30 can be almost or completely shielded from return light such as light emitted from another liquid crystal device by a projector or the like and penetrating through the composite optical system. As a result, the light leakage current in the TFT 30 is reduced during the operation of the liquid crystal device, the contrast ratio can be improved, and high-quality image display can be performed.

  In the present embodiment, in particular, the non-opening region (that is, the region through which display light is not transmitted) in the image display region 10 a is defined by the scanning lines 11 and the data lines 6. However, simply defining the non-opening area in the image display area 10a by simply arranging the scanning lines 11 and the data lines 6 along the X direction and the Y direction causes a considerable amount of light source light to leak and the contrast ratio of the display image. May get worse. In particular, in the vicinity of a region 60 (a region surrounded by a one-dot chain line in FIG. 4) where the scanning lines 11 and the data lines 6 intersect at right angles, the light source light is emitted from the end surfaces of the electrodes and wirings formed on the TFT array substrate 10. Reflected light tends to cause leakage light. Such leakage light is a problem because it is a factor that deteriorates the contrast ratio of the display image by being emitted from the image display surface of the liquid crystal device. Therefore, in the present embodiment, as will be described later, the data lines 6, the scanning lines 11, and the end faces of the relay layer 7 in the intersection region (that is, the end faces 6 ′ of the data lines 6, the end faces 11 ′ of the scanning lines 11), and the relay layers 7. By forming the antireflection film 80 on the end face 7 'and the end face 71' of the capacitor electrode 71, the light source light is prevented from being reflected, and a high contrast ratio can be secured.

  The non-opening region may be defined redundantly by a light shielding film 23 that is generally formed as a black matrix or a black mask formed on the counter substrate 20 or the TFT array substrate 10. Alternatively, the non-opening region portion defined by the light shielding film 23 in a plan view may be slightly larger than the non-opening region portion defined by the data line, the scanning line 11 and the like. Or it may be slightly smaller.

  The scanning line 11 is covered with the base insulating film 12 so that the surface thereof is flattened. The underlying insulating film 12 also has a function of preventing changes in the characteristics of the TFT 30 for pixel switching due to roughness during the surface polishing of the TFT array substrate 10 and dirt remaining after cleaning.

  A TFT 30 is formed on the base insulating film 12. The TFT 30 includes a semiconductor layer 30a and a gate electrode 30b. The semiconductor layer 30a is formed including a source region 30a1, a channel region 30a2, and a drain region 30a3. An LDD (Lightly Doped Drain) region may be formed at the interface between the channel region 30a2 and the source region 30a1 or between the channel region 30a2 and the drain region 30a3.

  The gate electrode of the TFT 30 is provided via the gate insulating film 13 in a region overlapping the channel region 30a2 of the semiconductor layer 30a when viewed in plan on the TFT array substrate 10. The gate electrode 30b is electrically connected to the scanning line 11 disposed on the lower layer side via the contact hole 35, and the TFT 30 is turned on / off by applying a scanning signal. The gate electrode 30b is made of, for example, conductive polysilicon.

  The source region 30a1 of the semiconductor layer 30a is connected to the data line 6 to which an image signal is supplied through the contact hole 31 opened in the gate insulating film 13, the first interlayer insulating film 14, and the second interlayer insulating film 15. Electrically connected. On the other hand, the drain region 30 a 3 is electrically connected to the pixel electrode 9 formed on the upper layer side via the relay layer 7. Here, the relay layer 7 is formed in the contact hole 32 opened in the gate insulating film 13 and the first interlayer insulating film 14, and electrically connects the drain region 30 a 3 and the pixel electrode 9. The pixel electrode 9 is disposed on the upper layer side of the relay layer 7 and is electrically connected to the relay layer 7 through a contact hole 16 formed in the second interlayer insulating film 15 and the third interlayer insulating film 16. ing.

  A capacitor electrode 71 is formed on the upper layer side of the relay layer 7 so as to face the relay layer 7. A capacitor insulating film 72 is sandwiched between the capacitor electrode 71 and the relay layer 7, and a storage capacitor 70 is formed. By providing the storage capacitor 70 in this way, it is possible to improve the retention characteristic with respect to the drive voltage applied from the drain region 30a3 of the pixel electrode 9.

  As shown in FIG. 5, the end surfaces of the data line 6, the scanning line 11, the relay layer 7, and the capacitor electrode 71, which are examples of the “conductive layer” in the present invention (that is, the end surface 6 ′ of the data line 6, the scanning). On the end face 11 ′ of the line 11, the end face 7 ′ of the relay layer 7, and the end face 71 ′ of the capacitor electrode 71, an antireflection film 80 is formed so as to be covered with a material having low light reflectivity. The antireflection film 80 is formed of a material having a low light reflectance such as TiN (titanium nitride) or W (tungsten). TiN (titanium nitride) and W (tungsten) have lower light reflectance than aluminum forming the data line 6, the scanning line 11 and the relay layer 7, polysilicon forming the capacitor electrode 71, and the like. Therefore, most of the light applied to the antireflection film 80 is absorbed by the antireflection film 80 without being reflected.

  As shown in FIG. 6 in an enlarged manner, the antireflection film 80 is in contact with or faces the interlayer insulating film 15 which is the base surface that forms the base of the data line 6 on the substrate, at the tip corresponding to the lower end of the figure. It has the front-end | tip part 80a. The distal end portion 80a has a shape constricted downward in the cross section of the surface 80s of the antireflection film 80. Further, the antireflection film 80 has a main body portion 80b connected to the upper side of the distal end portion 80a.

  The antireflection film 80 is formed such that the film thickness W of the distal end portion 80a is thinner than the film thickness W of the main body portion 80b. That is, the film thickness W of the distal end portion 80a gradually decreases toward the distal end that hits the lower side, and the antireflection film 80 has an end surface of the data line 6 whose surface 80s is a plane that stands substantially vertically. As compared with the case, it is formed to be curved or inclined.

  In addition, the antireflection film 80 has a tip portion 80c whose thickness W gradually decreases toward the tip that hits the upper end at the upper end.

  Therefore, for example, compared with the case where the end surface of the data line 6 is largely covered with the interlayer insulating film 15 which is a base surface extending beside the data line 6, in other words, the reflection prevention is slightly larger in plan view on the interlayer insulating film 15. Compared with the case where the film 80 is formed into a wavy hat shape and the end face of the data line 6 is covered with a great deal of redundancy, the laminated structure around the data line 6 is not enlarged.

  Further, since the antireflection film 80 has a curved surface or an inclined surface 80s, the data line 7 is increased by an amount corresponding to an increase in surface area as compared with the case of an antireflection film having a flat surface. This makes it possible to absorb oblique light, stray light, light irregularly reflected in the apparatus, and the like that are incident on the end face of the light source with higher efficiency. In addition, since the anti-reflection film 80 has such a curved or oblique surface 80s, the light reflected without being absorbed through the surface 80s can be at least partially reflected in the opening area of each pixel. It is also possible to shift to a steep direction or angle that is not included in the display light emitted in the direction substantially perpendicular to the substrate.

  In this sense, not only the tip portion 80a that is rounded at the lower end, but also the tip portion 80c that is simply rounded at the lower end is more efficient for oblique light and the like that is about to enter the end face of the data line 6. It contributes to absorption in.

  Particularly in the present embodiment, the antireflection film 80 is formed so as to cover the entire end face in the intersection region. That is, the tip 80a extends to a height just in contact with the upper surface of the interlayer insulating film 15 along the end surface. Therefore, end face reflection at the end face of the data line 6 can be reliably reduced.

  Moreover, as will be described later (see FIG. 13), since the antireflection film 80 can be formed by etch back using anisotropic etching, it is easy to manufacture and is manufactured as a highly reliable film.

  As shown in FIGS. 5 and 6, the end surfaces of the scanning line 11, the relay layer 7, and the capacitor electrode 71, which are examples of the “conductive layer” according to the present invention, are also examples of the “conductive layer”. As in the case of the data line 6, the antireflection film 80 having the tip portion 80 a, the main body portion 80 b and the tip portion 80 c is provided.

  Here, with reference to FIG. 7 in addition to FIG. 5, the region where the antireflection film 80 is formed in the data line 6 and the scanning line 11 will be further described. FIG. 7 is a three-dimensional schematic diagram visually showing the positional relationship between the data line 6 and the scanning line 11 in the region where the antireflection film 80 is formed in the liquid crystal device according to this embodiment. In FIG. 7, various components other than the data lines 6 and the scanning lines 11 are not shown for convenience of explanation.

  As shown in FIG. 7, the scanning lines 11 and the data lines 6 extend along the X direction and the Y direction, respectively. In FIG. 7, the area indicated by the hatch pattern is an area where the antireflection film 80 is formed.

  Here, for convenience of explanation, the region where the antireflection film 80 is formed on the data line 6 and the scanning line 11 is described. However, the relay layer 7 and the capacitor electrode 71 are similarly applied to the TFT array substrate. An antireflection film 80 is formed on an end face in a region overlapping with the intersecting region when viewed in plan on 10.

As described above, in the liquid crystal device according to the present embodiment, the antireflection film 80 is formed on each end face of the data line 6, the scanning line 11, the relay layer 7, and the capacitor electrode 71 in the intersecting region, thereby forming the non-opening region. It is possible to effectively prevent light leaking from the light and improve the contrast ratio of the display image.
<First Modification>
Next, a liquid crystal device according to a first modification will be described with reference to FIG. FIG. 8 is a three-dimensional schematic diagram visually showing the positional relationship between the data line 6 and the scanning line 11 in the region where the antireflection film 80 is formed in the liquid crystal device according to the first modification. In FIG. 8, various components other than the data lines 6 and the scanning lines 11 are not shown for convenience of explanation.

  As shown in FIG. 8, the liquid crystal device according to the present modification is different from the above-described embodiment in that an antireflection film 80 is formed on the end surfaces of the data lines 6 and the scanning lines 11 as a whole. Yes. Since the points other than this point are the same as those in the above-described embodiment, the description thereof is omitted here.

As described above, leakage light that causes a decrease in the contrast of the display image occurs mainly in the intersection region of the data line 6 and the scanning line 11, but the data line 6, the scanning line 11, the relay layer 7, and the other non-opening region. Not a little, it also occurs on each end face of the capacitor electrode 71. Therefore, as in the present modification, the anti-reflection film 80 is formed on the entire end face of the data line 6, the scanning line 11, the relay layer 7, and the capacitor electrode 71, so that the non-opening region is more effectively provided. As a result, it is possible to reduce the leakage light generated in step (b), so that a high-definition image display with a higher contrast ratio is possible (the relay layer 7 and the capacitor electrode 71 are not shown in FIG. 8).
<Second Modification>
Next, a liquid crystal device according to a second modification will be described with reference to FIGS. FIG. 9 is a cross-sectional view based on the same concept as in FIG. 5 in the liquid crystal device according to the second modification. FIG. 10 is a partial cross-sectional view showing an extracted and enlarged portion of the antireflection film in FIG. Since points other than the antireflection film 80 are the same as those in the above-described embodiment, the description thereof is omitted here.

  As shown in FIG. 9, in the liquid crystal device according to this modification, the antireflection film 80 is formed so as to cover the data line 6, the scanning line 11, the relay layer 7, and the capacitor electrode 71 from the upper surface side in the intersection region. Is different from the above-described embodiment. In other words, in the present modification, the antireflection film 80 includes the data line 6, the scanning line 11, the relay layer 7 and the end face of the capacitor electrode 71 (that is, the end face 6 ′ of the data line 6, the end face 11 ′ of the scanning line 11, the relay). It is formed not only on the end face 7 ′ of the layer 7 and the end face 71 ′ of the capacitor electrode 71, but also on the respective upper surfaces.

  As shown in an enlarged view in FIG. 10, the antireflection film 80 includes a front end portion 80 a that hits the lower end and a main body portion having a relatively thick film thickness W as in the case of the antireflection film 80 shown in FIG. 6. In addition to having 80b and the front-end | tip part 80c which hits an upper end, it has the upper layer part 80d.

  In the various aspects described above, the antireflection film 80 is provided in order to prevent leakage light caused by reflection of the light source light by the end surfaces of the data line 6, the scanning line 11, the relay layer 7, and the capacitor electrode 71. In the liquid crystal device, the light source light reflected from the surfaces of the data line 6, the scanning line 11, the relay layer 7 and the capacitor electrode 71 becomes stray light in the liquid crystal device and is emitted from the display surface, thereby similarly displaying image contrast. It will cause the ratio to decrease. In this respect, by forming the antireflection film 80 so as to cover the surfaces of the data line 6, the scanning line 11, the relay layer 7, and the capacitor electrode 71 as in this modification, the contrast ratio is high and the quality is high Image display is possible.

  Moreover, as will be described later (see FIGS. 11 and 12), since the antireflection film 80 can be formed by etch back using anisotropic etching, it is easy to manufacture and is manufactured as a highly reliable film. Is done.

  As shown in FIGS. 9 and 10, the end surfaces and top surfaces of the scanning line 11, the relay layer 7, and the capacitor electrode 71, which are examples of the “conductive layer” according to the present invention, are also the “conductive layer”. As in the case of the data line 6 as an example, in addition to the tip portion 80a, the main body portion 80b, and the tip portion 80c, the antireflection film 80 having the upper layer portion 80d is provided.

<Manufacturing method>
Next, a method for manufacturing the electro-optical device according to the above-described embodiment will be described. Here, in particular, various processes for forming the antireflection film 80 will be described in detail with reference to the drawings.

  First, an example of a method for manufacturing an electro-optical device having the antireflection film 80 as shown in FIGS. 9 and 10 will be described with reference to FIGS. 11 and 12 are a series of process diagrams (No. 1 and No. 2) according to the manufacturing method.

  As shown in step S11 of FIG. 11, a conductive material film 6p such as aluminum is formed on one surface of the interlayer insulating film 15 by, for example, sputtering, vapor deposition, or the like. Prior to step S11, under the interlayer insulating film 15, as shown in FIG. 9, the scanning line 11, TFT 30, storage capacitor 70, each interlayer insulating film, etc. are passed through various film forming processes, various etching processes, and the like. Is formed.

  Subsequently, as shown in step S12, a first antireflection material film 80pa of TiN, W, or the like is formed on one surface of the conductive material film 6p by, for example, sputtering, vapor deposition, or the like.

  Subsequently, as shown in step S13, a resist 801r is formed by photolithography. That is, the entire surface of a positive or negative resist material is applied, light irradiation through a mask, development, baking, and the like are performed, and a resist 801r corresponding to the pattern of the data line 6 is formed on the first antireflection material film 80pa. Formed.

  Subsequently, in step S14, the conductive material film 6p and the first antireflection material film 80pa are formed by anisotropic etching such as dry etching having directivity in a direction perpendicular to the substrate surface through the resist 801r. Patterned together. As a result, the data line 6 and the first antireflection material film 80pa having the same plane pattern as the data line are formed on the interlayer insulating film 15.

  Subsequently, in step S15, the resist 801r is removed.

  Subsequently, in step S16 of FIG. 12, a second antireflection material film 80pb of TiN, W or the like is formed on one surface by, for example, sputtering, vapor deposition, or the like. The second antireflection material film 80pb may be a film made of the same material as the first antireflection material film 80pa.

  Subsequently, in step S17, the second antireflection material film 80pb formed in this way is etched back entirely by an etching gas 901e having directivity in a direction perpendicular to the substrate surface. In such an etch-back process, since the directivity is locally disturbed by the etching gas 901e hitting the base surface at the tip of the flow, the antireflection film 80 is compared with the flat end surface of the data line 6. And it is formed to be much rounder.

  As shown in step S18, when etch back is continued until the portion of the second antireflection material film 80pb that is not on the first antireflection material film 80pa is completely removed, the end face of the data line 6 is formed. The highly reliable antireflection film 80 can be formed from the second antireflection material film 80pb. At the same time, an upper layer made of an antireflection material can be formed on the upper surface of the data line 6 from the first antireflection material film 80pa.

  Through the above steps, the antireflection film 80 as shown in FIGS. 9 and 10 is formed on the end face and the upper face of the data line 6.

  Thereafter, the TFT array substrate side of the electro-optical device is completed by forming the interlayer insulating film 16, the pixel electrode 9 and the like, and thereafter, through steps such as bonding to the counter substrate side and liquid crystal injection, FIG. And the electro-optical device as shown in FIG. 2 is completed.

  As shown in step S19 of FIG. 12, the first antireflection material film 80pa having the same plane pattern as the data line 6 is left on the data line 6 in a form that is slightly thinner than the original film thickness. Accordingly, it is possible to form a thinner antireflection film 80.

  As a result, the antireflection film 80 having a special shape as shown in FIGS. 9 and 10 can be formed on the end surface and the upper surface of the data line 6 while employing a relatively simple process called etch back. By using the etch back, it is not necessary to increase the number of times of performing the photolithography and etching steps as shown in steps S13 to S15, so that the manufacturing cost can be suppressed.

  Note that the scanning lines 11, the relay layers 7, and the end surfaces and the upper surfaces of the capacitor electrodes 71 shown in FIGS. 9 and 10 are also formed in the same manner as the data lines 6 described with reference to FIGS. 11 and 12. Each of the antireflection films 80 is formed.

  Next, an example of a method for manufacturing an electro-optical device having the antireflection film 80 as shown in FIGS. 5 and 6 will be described with reference to FIG. FIG. 13 is a series of process diagrams according to the manufacturing method.

  As shown in step S21 of FIG. 13, a conductive material film 6p such as aluminum is formed on one surface of the interlayer insulating film 15 by, for example, sputtering or vapor deposition. Prior to step S11, under the interlayer insulating film 15, as shown in FIG. 5, the scanning line 11, TFT 30, storage capacitor 70, each interlayer insulating film, etc. are passed through various film forming processes, various etching processes, and the like. Is formed.

  Subsequently, as shown in step S22, a resist 801r is formed by photolithography. That is, the entire surface of a positive or negative resist material is applied, light irradiation through a mask, development, baking, and the like are performed, and a resist 801r corresponding to the pattern of the data line 6 is formed on the conductive material film 6p. The

  Subsequently, in step S23, the conductive material film 6p is patterned by anisotropic etching such as dry etching having directivity in a direction perpendicular to the substrate surface via the resist 801r. As a result, the data line 6 is formed on the interlayer insulating film 15.

  Subsequently, in step S24, the resist 801r is removed.

  Subsequently, in step S25, an antireflection material film 80p such as TiN or W is formed on one surface by, for example, sputtering, vapor deposition, or the like.

  Subsequently, in step S26, the antireflection material film 80p formed in this way is etched back by the etching gas 901e having directivity in a direction perpendicular to the substrate surface. In such an etch-back process, since the directivity is locally disturbed by the etching gas 901e hitting the base surface at the tip of the flow, the antireflection film 80 is compared with the flat end surface of the data line 6. And it is formed to be much rounder.

  As shown in step S27, when etch back is continued until the portion of the antireflection material film 80p that is not on the data line 6 is completely removed, a highly reliable antireflection film is formed on the end face of the data line 6. 80 can be formed from the antireflection material film 80p. In this case, the antireflection material film 80 p does not remain on the upper surface of the data line 6.

  Through the above steps, the antireflection film 80 as shown in FIGS. 5 and 6 is formed on the end face of the data line 6.

  Thereafter, the TFT array substrate side of the electro-optical device is completed by forming the interlayer insulating film 16, the pixel electrode 9 and the like, and thereafter, through steps such as bonding to the counter substrate side and liquid crystal injection, FIG. And the electro-optical device as shown in FIG. 2 is completed.

  As a result, the antireflection film 80 having a special shape as shown in FIGS. 5 and 6 can be formed on the end face of the data line 6 while adopting a relatively simple process called etch back. By using the etch back, it is not necessary to increase the number of times of performing the photolithography and etching processes as shown in steps S22 to S24, so that the manufacturing cost can be suppressed.

  Note that the antireflection film 80 is also formed on the end surfaces of the scanning line 11, the relay layer 7 and the capacitor electrode 71 shown in FIGS. 5 and 6 as in the case of forming the data line 6 described with reference to FIG. Each is formed.

<Electronic equipment>
Next, the case where the liquid crystal device which is the above-described electro-optical device is applied to various electronic devices will be described.

  FIG. 14 is a plan view showing a configuration example of the projector. Hereinafter, a projector using the liquid crystal device as a light valve will be described.

  As shown in FIG. 14, a projector 1100 includes a lamp unit 1102 made up of a white light source such as a halogen lamp. The projection light emitted from the lamp unit 1102 is separated into three primary colors of RGB by four mirrors 1106 and two dichroic mirrors 1108 arranged in the light guide 1104, and serves as a light valve corresponding to each primary color. The light enters the liquid crystal panels 1110R, 1110B, and 1110G.

  The configurations of the liquid crystal panels 1110R, 1110B, and 1110G are the same as those of the liquid crystal device described above, and are driven by R, G, and B primary color signals supplied from the image signal processing circuit. The light modulated by these liquid crystal panels enters the dichroic prism 1112 from three directions. In the dichroic prism 1112, R and B light is refracted at 90 degrees, while G light travels straight. Therefore, as a result of the synthesis of the images of the respective colors, a color image is projected onto the screen or the like via the projection lens 1114.

  Here, paying attention to the display images by the liquid crystal panels 1110R, 1110B, and 1110G, the display image by the liquid crystal panel 1110G needs to be horizontally reversed with respect to the display images by the liquid crystal panels 1110R and 1110B.

  In addition, since light corresponding to each primary color of R, G, and B is incident on the liquid crystal panels 1110R, 1110B, and 1110G by the dichroic mirror 1108, it is not necessary to provide a color filter.

  In addition to the electronic device described with reference to FIG. 14, a mobile personal computer, a mobile phone, a liquid crystal television, a viewfinder type, a monitor direct-view type video tape recorder, a car navigation device, a pager, an electronic device Examples include a notebook, a calculator, a word processor, a workstation, a videophone, a POS terminal, and a device equipped with a touch panel. Needless to say, the present invention can be applied to these various electronic devices.

  In addition to the liquid crystal devices described in the above embodiments, the present invention includes a reflective liquid crystal device (LCOS), a plasma display (PDP), a field emission display (FED, SED), an organic EL display, and a digital micromirror device. (DMD), electrophoresis apparatus and the like are also applicable.

  The present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the spirit or concept of the invention that can be read from the claims and the entire specification. The manufacturing method and the electronic apparatus provided with the electro-optical device are also included in the technical scope of the present invention.

  6 data line, 7 relay layer, 9 pixel electrode, 10 TFT array substrate, 10a image display area, 11 scanning line, 13 gate insulating film, 20 counter substrate, 30 TFT, 30a semiconductor layer, 30a1 source area, 30a2 channel area, 30a3 drain region, 30b gate electrode, 70 storage capacitor, 71 capacitor electrode, 72 capacitor insulating film, 80 antireflection film, 80a tip, 80b body part, 80d upper layer part

Claims (10)

On the board
A pixel electrode;
A wiring for supplying a signal to the pixel electrode, a conductive layer constituting at least a part of the electrode and the electronic element;
An antireflection film formed so as to cover at least a part of an end face of the conductive layer with a light-shielding material having a light reflectance lower than that of the conductive layer;
The antireflection film has (i) a tip portion that contacts or faces the base surface forming the base of the conductive layer on the substrate, and (ii) a main body portion connected to the tip portion, and the film of the tip portion An electro-optical device, characterized in that the thickness is smaller than the thickness of the main body, and the surface is curved or inclined as compared with the end face.   The electro-optical device according to claim 1, wherein the antireflection film is formed so as to cover the conductive layer from an upper surface side in addition to covering the end surface.   2. The electro-optical device according to claim 1, wherein the antireflection film is not provided partially or at all on the upper surface of the conductive layer.   The electro-optical device according to claim 1, wherein the antireflection film is not formed on the base surface. The conductive layer is
A first conductive layer formed on a lower layer side than the pixel electrode;
A second conductive layer formed on a lower layer side than the first conductive layer,
5. The electro-optical device according to claim 1, wherein the antireflection film is formed so as to cover respective end surfaces of the first conductive layer and the second conductive layer. 6. . The first conductive layer and the second conductive layer are a data line and a scan line extending along a first direction and a second direction intersecting the first direction, respectively.
6. The electro-optical device according to claim 5, wherein a non-opening region that separates an opening region for each pixel in which the pixel electrode is disposed is at least partially defined by the data line and the scanning line. .   Of the non-opening regions that separate the opening regions of the pixels in which the pixel electrodes are arranged, the first region extending along the first direction and the second region extending along the second direction intersecting the first direction. At least part of the end surfaces of the conductive layer in the first region and the second region excluding the intersecting region where two regions intersect each other, the antireflection film provided on the end surface of the conductive layer in the intersecting region The electro-optical device according to claim 1, wherein the electro-optical device is provided so as to extend.   An electronic apparatus comprising the electro-optical device according to claim 1. On the substrate, a pixel electrode, a wiring for supplying a signal to the pixel electrode, a conductive layer constituting at least a part of the electrode and the electronic element, and at least a part of an end face of the conductive layer are made more than the conductive layer. An electro-optical device manufacturing method for manufacturing an electro-optical device comprising an antireflection film formed so as to be covered with a light-shielding material having a low light reflectance,
Forming a conductive material film constituting the conductive layer on one surface on a base surface forming the base of the conductive layer on the substrate;
Forming a first antireflective material film capable of partially constituting the antireflective film on one surface of the formed conductive material film;
Patterning the conductive material film and the first antireflective material film together so as to have a planar pattern of the conductive layer;
The antireflection film is formed on a surface of the first antireflection material film left on the conductive layer, which is the patterned conductive material film, and on the surface of the base surface exposed from the side of the first antireflection material film. Forming a second antireflective material film that constitutes at least a portion covering the end face of the film;
Etching back the first and second antireflective material films by anisotropic etching having directivity along the end face. A method of manufacturing an electro-optical device, comprising: On the substrate, a pixel electrode, a wiring for supplying a signal to the pixel electrode, a conductive layer constituting at least a part of the electrode and the electronic element, and at least a part of an end face of the conductive layer are made more than the conductive layer. An electro-optical device manufacturing method for manufacturing an electro-optical device comprising an antireflection film formed so as to be covered with a light-shielding material having a low light reflectance,
Forming a conductive material film constituting the conductive layer on one surface on a base surface forming the base of the conductive layer on the substrate;
Patterning the conductive material film so as to have a planar pattern of the conductive layer;
Forming an antireflective material film constituting the antireflective film on one surface of the patterned conductive material film on the conductive layer and on a portion of the base surface exposed from the side of the conductive layer; ,
Etching back the antireflective material film by anisotropic etching having directivity along the end face. A method of manufacturing an electro-optical device.

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