JP2011155070A - Method of processing substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To easily manufacture a thin semiconductor wafer in a relatively short time, prevent a crack of a substrate, and improve a production yield rate. <P>SOLUTION: A method of processing substrate includes the steps of: arranging a laser condensing unit 16 above a substrate 10 in a noncontact manner; irradiating a laser light onto a surface of the substrate 10 and condensing the laser light inside the substrate using the laser condensing unit 16; forming a two-dimensional interior reformed layer 12 inside the substrate 10 by relatively moving the laser condensing unit 16 and the substrate 10; forming at least one patterned reformed layer 36 on the side of the two-dimensional interior reformed layer 12 facing the laser condensing unit 16 or on an opposite side from the laser condensing unit 16 by relatively moving the laser condensing unit 16 and the substrate 10; exposing the patterned reformed layer 36 on the surface of the substrate 10; and etching the patterned reformed layer 36 and the two-dimensional interior reformed layer 12, wherein a relative moving direction of the laser condensing unit 16 and the substrate 10 is not same as a cleavage direction of the substrate 10. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a substrate processing method, and more particularly to a substrate processing method for manufacturing a semiconductor wafer by thinly cutting it.

  Conventionally, when manufacturing a semiconductor wafer represented by a silicon (Si) wafer, although not shown, a cylindrical ingot solidified from a silicon melt melted in a quartz crucible is cut into blocks of an appropriate length. Then, the peripheral edge is ground so as to have a target diameter, and then a block-shaped ingot is sliced into a wafer shape with a wire saw to manufacture a semiconductor wafer (for example, refer to Patent Documents 1 and 2). .)

  The semiconductor wafer manufactured in this way is subjected to various processes such as circuit pattern formation in the previous process in order and used in the subsequent process. In this subsequent process, the back surface is back-grinded and thinned. Accordingly, the thickness is adjusted to about 750 μm to 100 μm or less, for example, about 75 μm or 50 μm.

  A conventional semiconductor wafer is manufactured as described above, and an ingot is cut with a wire saw, and a cutting allowance larger than the thickness of the wire saw is required for cutting, so a thin semiconductor wafer with a thickness of 0.1 mm or less It is very difficult to manufacture the product, and the product rate is not improved.

  In recent years, silicon carbide (SiC), which has high hardness and high thermal conductivity, has attracted attention as a next-generation semiconductor. In the case of SiC, ingots can be easily formed with a wire saw because of its higher hardness than Si. In addition, it is not easy to slice the substrate, and it is not easy to thin the substrate by back grinding.

  On the other hand, the condensing point of the laser beam is aligned with the inside of the ingot with the condensing lens, and the ingot is relatively scanned with the laser beam to form a planar modified layer by multiphoton absorption inside the ingot. A substrate manufacturing method and a substrate manufacturing apparatus are disclosed in which a part of the ingot is peeled off using the modified layer as a peeling surface (see, for example, Patent Documents 3 and 4). In Patent Document 3, laser light is scanned concentrically or spirally, and in Patent Document 4, laser light is scanned in the XY directions using an XY stage. However, when the scanning direction coincides with the cleavage direction of the substrate, there is a problem that the wafer is likely to break, particularly when the substrate is thin like a wafer.

JP 2008-200772 A JP 2005-297156 A JP 2005-277136 A JP 2005-294325 A

  The object of the present invention is that a thin semiconductor wafer can be easily manufactured in a relatively short time, and the relative movement direction of the laser focusing means and the substrate does not coincide with the cleavage direction of the substrate. An object of the present invention is to provide a substrate processing method capable of preventing the cracking of the substrate and improving the product rate.

  According to one aspect of the present invention for achieving the above object, the step of disposing laser condensing means on a substrate in a non-contact manner, the laser condensing means irradiating the substrate surface with laser light, and A step of condensing laser light inside the substrate, and a step of relatively moving the laser condensing means and the substrate to form a two-dimensional internal modified layer inside the substrate, the laser A substrate processing method is provided in which the relative movement direction of the light collecting means and the substrate does not coincide with the cleavage direction of the substrate.

  According to another aspect of the present invention, the step of disposing laser condensing means on the substrate in a non-contact manner, the laser condensing means irradiating the surface of the substrate with laser light, and the laser light inside the substrate. The step of condensing, the laser condensing means and the substrate are moved relatively, and the condensing point of the laser light condensed inside the substrate is the deepest part of the substrate opposite to the laser condensing means And moving the laser focusing means to the laser focusing means side to form a single layer or a plurality of patterned modified layers, and the relative movement of the laser focusing means and the substrate A substrate processing method is provided in which the direction does not coincide with the cleavage direction of the substrate.

  According to the present invention, a thin semiconductor wafer can be easily manufactured in a relatively short time, and the relative movement direction of the laser focusing means and the substrate does not coincide with the cleavage direction of the substrate. It is possible to provide a substrate processing method capable of preventing the substrate from cracking and improving the product rate.

(A) Schematic plan view for explaining a semiconductor wafer applied to the substrate processing method according to the first embodiment of the present invention, (b) XY scanning direction of laser light and cleavage direction C of the substrate 10 The schematic plan view to explain. (A) Schematic cross-sectional structure diagram for explaining a substrate processing method according to the first embodiment of the present invention, (b) a two-dimensional internal modified layer is relatively thick by one irradiation with laser light. FIG. 3 is a schematic cross-sectional structure diagram for explaining a substrate processing method according to the first embodiment of the present invention when formed. The typical bird's-eye view explaining the board | substrate processing method which concerns on the 1st Embodiment of this invention. The typical bird's-eye view explaining the board | substrate processing method which concerns on a comparative example. In the board | substrate processing method which concerns on the 1st Embodiment of this invention, the typical bird's-eye view of the board | substrate along the XY scanning direction after the process of forming a two-dimensional internal modified layer. In the board | substrate processing method which concerns on the 1st Embodiment of this invention, the typical bird's-eye view of the board | substrate after the process of forming the 1st pattern-form modification layer. In the substrate processing method according to the first embodiment of the present invention, after the step of forming the p-type semiconductor layer on the substrate surface on the side where the patterned modified layer is formed, the X- after the step of forming the protective layer The typical bird's-eye view of the board | substrate along a Y scanning direction. In the board | substrate processing method which concerns on the 1st Embodiment of this invention, the typical bird's-eye view of the board | substrate along the XY scanning direction after the process of forming the 2nd pattern modification layer. FIG. 6 is a schematic sectional view taken along the line II of FIG. 5. FIG. 7 is a schematic sectional view taken along line II-II in FIG. 6. FIG. 8 is a schematic cross-sectional structure diagram taken along line III-III in FIG. 7. FIG. 10 is a schematic sectional view taken along line IV-IV in FIG. 8. FIG. 3 is a schematic cross-sectional structure diagram of a substrate after a step of forming a third patterned modified layer in the substrate processing method according to the first embodiment of the present invention. (A) In the board | substrate processing method which concerns on the 1st Embodiment of this invention, the typical cross-section figure of the board | substrate after the process which patterned the protective layer and the p-type semiconductor layer, (b) Pattern-like modified layer and The typical bird's-eye view of the board | substrate made into a chip | tip after the process of etching a two-dimensional internal modified layer. The typical cross-section figure explaining the board | substrate of the process of etching a pattern-form modification layer and a two-dimensional internal modification layer in the board | substrate processing method which concerns on the 1st Embodiment of this invention. In the board | substrate processing method which concerns on the 2nd Embodiment of this invention, the typical cross-section figure of the board | substrate after the process of forming the 1st pattern-form modification layer. In the board | substrate processing method which concerns on the 2nd Embodiment of this invention, the typical cross-section figure of the board | substrate after the process of forming the 2nd layer and the 3rd layer pattern modification layer. The typical cross-section figure of the board | substrate after the process of forming a two-dimensional internal modification layer in the board | substrate processing method which concerns on the 2nd Embodiment of this invention. The typical cross-section figure explaining the board | substrate of the process of etching a pattern-form modification layer and a two-dimensional internal modification layer in the board | substrate processing method which concerns on the 2nd Embodiment of this invention. In the substrate processing method according to the second embodiment of the present invention, along the XY scanning direction after the step of forming the square shaped patterned modified layer 60 and the circular patterned modified layer 62 The schematic bird's-eye view of a board | substrate. In the substrate processing method according to the second embodiment of the present invention, after the step of etching the pattern-like modified layers 60 and 62 and the two-dimensional internal modified layer 12, the chip-formed XY scanning direction is followed. The typical bird's-eye view explaining the semiconductor processing board 66. FIG. (A) In the substrate processing method according to the second embodiment of the present invention, a schematic plan view for explaining a plurality of semiconductor processed substrates 66 formed into chips, (b) in the third embodiment of the present invention. In the substrate processing method, a schematic plan view for explaining a semiconductor processing substrate 66 having a large area, In the board | substrate processing method which concerns on the 3rd Embodiment of this invention, the typical bird's-eye view of the board | substrate along the XY scanning direction after the process of forming the 4th pattern modification layer. In the substrate processing method according to the comparative example in which the cleavage direction and the XY scanning direction coincide with each other, the XY after the step of forming the square shaped patterned modified layer 80 and the circular patterned modified layer 82 The typical bird's-eye view of the board | substrate along a scanning direction. In the substrate processing method according to the comparative example in which the cleavage direction and the XY scanning direction coincide with each other, after the step of etching the patterned modified layers 80 and 82 and the two-dimensional internal modified layer 12, the chipped XY The typical bird's-eye view explaining the semiconductor processing board | substrate 86 along a scanning direction.

  Next, embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationship between the thickness and the planar dimensions, the ratio of the thickness of each layer, and the like are different from the actual ones. Therefore, specific thicknesses and dimensions should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

  Further, the embodiments described below exemplify apparatuses and methods for embodying the technical idea of the present invention, and the embodiments of the present invention include the material, shape, structure, The layout is not specified as follows. Various modifications can be made to the embodiment of the present invention within the scope of the claims.

  In the following description of the embodiments, the cleavage direction means a crystalline substrate in which a two-dimensional internal modified layer is formed, and the crystalline substrate has a cleavage plane that is not parallel to the two-dimensional internal modified layer. This is the direction of the line where the cleavage plane and the two-dimensional internal reforming layer intersect.

[First embodiment]
The semiconductor wafer structure applied to the substrate processing method according to the first embodiment of the present invention is expressed as shown in FIG. 1A, and the XY scanning direction and the cleavage direction C are shown in FIG. ). As shown in FIG. 1A, for example, in a (100) plane silicon wafer, the cleavage direction C is a direction perpendicular to the <110> direction and the <110> direction of the orientation flat.

  A schematic cross-sectional structure for explaining the substrate processing method according to the first embodiment is expressed as shown in FIG. 2A, and the two-dimensional internal modified layer is irradiated with a single laser beam. A schematic cross-sectional structure for explaining a substrate processing method in the case of forming a relatively thick film is expressed as shown in FIG. A schematic bird's-eye view structure for explaining the substrate processing method according to the first embodiment is expressed as shown in FIG. Further, a schematic bird's-eye view structure for explaining the substrate processing method according to the comparative example is expressed as shown in FIG.

  As shown in FIGS. 2 and 3, an aberration-enhancing glass plate 18 may be disposed between the condenser lens 16 and the substrate 10 as an aberration-enhancing material for the laser light 20. By arranging such an aberration-enhancing glass plate 18 between the condenser lens 16 and the substrate 10, the laser beam 22 that forms the laser spot 24 on the surface of the substrate 10 is refracted on the surface of the substrate 10, and the laser beam When entering the inside of the substrate 10 as 26 and forming the focal point P inside the substrate 10, an image having a predetermined depth and width is formed. As a result, the two-dimensional internal modified layer 12 formed in the substrate 10 can be formed to have a predetermined depth t.

  In the substrate processing method according to the first embodiment, as shown in FIGS. 1 and 3, X is the scanning direction of laser light when forming the two-dimensional internal modified layer 12 on the substrate 10. The direction and the Y direction are shifted from the cleavage direction C of the cleavage surfaces 14a to 14d by a predetermined angle, for example, about 5 degrees. By thus shifting the X-Y scanning direction of the laser light, it is possible to prevent the substrate 10 from cracking in the process of forming the two-dimensional internal modified layer 12.

  On the other hand, in the substrate processing method according to the comparative example, as shown in FIG. 4, the X direction and the Y direction which are the scanning directions of the laser light when forming the two-dimensional internal modified layer 12 on the substrate 10 are , Which coincides with the cleavage direction C of the cleavage surfaces 14a to 14d. As described above, when the XY scanning direction of the laser beam is matched with the cleavage direction C of the cleavage surfaces 14a to 14d, the result that the substrate 10 is easily cracked in the process of forming the two-dimensional internal modified layer 12 is obtained. It has been. Therefore, shifting the XY scanning direction of the laser beam by a predetermined angle with respect to the cleavage direction C of the cleavage surfaces 14a to 14d is important for preventing the substrate 10 from cracking. When the two-dimensional internal modified layer 12 is formed, it is desirable that the moving direction of the condensing point (X direction and Y direction) and the cleavage direction C of the substrate 10 are shifted by 0.5 degrees or more. When forming a patterned modified layer in addition to the internal modified layer 12, it is desirable to shift it by 5 degrees or more.

  In the substrate processing method according to the first embodiment, a schematic bird's-eye view structure of the substrate 10 along the XY scanning direction after forming the two-dimensional internal modified layer 12 is expressed as shown in FIG. A schematic bird's-eye view structure of the substrate 10 along the XY scanning direction after the step of forming the first patterned modified layer 36 on the two-dimensional internal modified layer 12 is expressed as shown in FIG. .

  In the substrate processing method according to the first embodiment, after the step of forming the p-type semiconductor layer 38 on the substrate surface on the side on which the patterned modified layer is formed, the XY after the step of forming the protective layer 40 A schematic bird's-eye view structure of the substrate 10 along the scanning direction is expressed as shown in FIG. 7, and a schematic view of the substrate 10 along the XY scanning direction after the step of forming the second patterned modified layer 42 is formed. The bird's-eye view structure is represented as shown in FIG.

  5 is represented as shown in FIG. 9, and the schematic cross-sectional structure taken along line II-II in FIG. 6 is represented as shown in FIG. A schematic cross-sectional structure taken along the line III-III is represented as shown in FIG. 11, and a schematic cross-sectional structure taken along the line IV-IV in FIG. 8 is represented as shown in FIG.

  In the substrate processing method according to the first embodiment, a schematic cross-sectional structure of the substrate 10 along the XY scanning direction after the step of forming the third patterned modified layer 43 is as shown in FIG. It is expressed in

  Further, in the substrate processing method according to the first embodiment, a schematic cross-sectional structure of the substrate 10 after the process of patterning the protective layer 40 and the p-type semiconductor layer 38 is expressed as shown in FIG. A schematic bird's-eye view structure of the chip-formed substrate after the step of etching the patterned modified layers 36, 42, 43 and the two-dimensional internal modified layer 12 is expressed as shown in FIG. The

  In the substrate processing method according to the first embodiment, a schematic cross-sectional structure for explaining the substrate 10 in the step of etching the patterned modified layers 36, 42, 43 and the two-dimensional internal modified layer 12 is as follows. It is expressed as shown in FIG.

  As shown in FIGS. 2 to 3 and FIGS. 5 to 15, the substrate processing method according to the first embodiment includes a step of disposing laser condensing means 16 on the substrate 10 in a non-contact manner, The step of irradiating the surface of the substrate 10 with the laser beams 20 and 22 by the light means 16 and condensing the laser light 26 inside the substrate 10, the relative movement of the laser condensing means 16 and the substrate 10, Forming a two-dimensional internal modified layer 12 therein, and the relative movement direction of the laser focusing means 16 and the substrate 10 does not coincide with the cleavage direction of the substrate 10. .

  A step of relatively moving the laser condensing means 16 and the substrate 10 to form at least one patterned modified layer 36 on the laser condensing means 16 side of the two-dimensional internal modified layer 12; 10 may include a step of exposing the patterned modified layer 43 on the surface and a step of etching the patterned modified layers 36, 42, 43 and the two-dimensional internal modified layer 12.

  Also, the step of relatively moving the laser condensing means 16 and the substrate 10 to form at least one patterned modified layer 36 on the opposite side of the two-dimensional internal modified layer 12 to the laser condensing means 16 side. You may have.

  Further, the laser condensing means 16 and the substrate 10 are relatively moved so that at least one layer pattern is formed on the laser condensing means 16 side and / or on the opposite side of the two-dimensional internal modified layer 12. A step of forming the modified layer 36 may be included.

  Further, the step of forming the patterned modified layer 36 is performed on the two-dimensional internal modified layer 12 by moving the condensing point of the laser beam 26 condensed inside the substrate 10 to the laser condensing means 16 side. There may be a step of forming one or more patterned modified layers 36, 42, 43 patterned in the same manner.

  The step of exposing the patterned modified layer 43 on the surface of the substrate 10 is performed by moving the condensing point of the laser beam 26 condensing inside the substrate 10 toward the laser condensing means 16 side. The step of forming the patterned modified layer 43 may be included.

  The substrate 10 is a semiconductor substrate, and after the step of forming the patterned modified layer 36 and before the step of exposing the patterned modified layer 43 to the surface of the substrate 10, the substrate 10 has the opposite conductivity type to the substrate 10. A step of forming the p-type semiconductor layer 38 may be included.

  As the substrate 10, for example, an n-type Si wafer having a size of 50 × 50 mm and a thickness of about 0.625 mm is used. For example, the (100) plane is used as the plane orientation of the Si wafer. The mirror-polished n-type Si wafer is placed on an XY stage (not shown) with the polishing surface facing upward with a shift of about 5 degrees in the Y direction from the cleavage direction C of the wafer. The X-Y scanning direction, the cleavage direction C, and the cleavage surfaces 14a to 14d of the laser light are expressed as shown in FIG.

  The step of moving the condenser lens 16 and the substrate 10 relatively to form the two-dimensional internal modified layer 12 inside the substrate 10 is, for example, as shown in FIG. Thus, the laser beams 20, 22, and 26 are condensed on the inside of the substrate 10 while being sent in the X direction in steps of 10 μm. The focal length of the condenser lens 16 is, for example, about 2 mm and the numerical aperture is 0.8. The aberration enhancing glass plate 18 is made of, for example, glass having a thickness of 0.15 mm. At this time, the focal point was in a state where it was moved downward by 70 μm after being focused on the substrate surface. As a result, the two-dimensional internal modified layer 12 having a width of about 80 μm is formed at a depth of about 250 μm from the surface of the substrate 10. As a light source of the laser beam 20, for example, a YAG laser (10 kHz, 0.8 W) having a wavelength of 1064 μm and a pulse width of about 150 nsec can be applied. In FIG. 3, for example, the irradiation area of the laser beam is 11 mm × 11 mm.

  The schematic bird's-eye view structure of the substrate 10 has a structure in which the two-dimensional internal modified layer 12 is sandwiched between the substrates 10u and 10d, as shown in FIGS. Here, FIG. 5 shows a bird's-eye view structure of the substrate 10 along the XY direction.

  Next, as shown in FIG. 6 and FIG. 10, after moving the condenser lens 16 upward by 20 μm, drawing a “field” character pattern having a size of 10 mm × 10 mm is repeated one or more times. A rice field-shaped modified layer 36 is formed. At this time, each vertical and horizontal line draws 10 lines at a pitch of 10 μm, thereby forming a 100 μm-wide pattern-like modified layer 36.

  Next, as shown in FIGS. 7 and 11, the substrate 10 was degreased with acetone, and then a polyethylenedioxythiophene-polystyrenesulfonic acid aqueous dispersion system ink was dropped, followed by drying treatment and UV irradiation treatment. By curing, a conductive polymer layer (p-type semiconductor layer) 38 is formed. Next, the surface of the p-type semiconductor layer 38 is covered with paraffin wax 155 (manufactured by Nippon Seiwa Co., Ltd.) to form the protective layer 40.

  Next, as shown in FIG. 8 and FIG. 12, the substrate 10 is fixed again on the XY table, and the same shape is formed on the pattern-shaped modified layer 36 in the shape of a “field” with the substrate surface being focused. The patterned modified layer 42 is formed by drawing a pattern.

  Next, as shown in FIG. 13, a patterned modified layer 43 is formed by drawing the same pattern on the “rice” shaped modified layer 42 while focusing on the substrate surface. To do.

  Next, as shown in FIG. 14A, the protective layer 40 and the p-type semiconductor layer 38 are patterned to remove the protective layer 40 and the p-type semiconductor layer 38 and to modify the pattern on the surface of the substrate 10. Layer 43 is exposed.

  Next, as shown in FIG. 15, the substrate 10 is put into an etching tank 46 filled with an etching solution 44, and the patterned modified layers 36, 42, 43 and the two-dimensional internal modified layer 12 are etched. A 10% aqueous sodium hydroxide solution was applied as the etching solution 44 and etched at 60 ° C. for 3 hours. When the substrate 10 was separated vertically by sandwiching the two-dimensional internal modified layer 12, a 5 × 5 mm thickness was obtained. Four thin substrates can be obtained. An example of a schematic bird's-eye view structure of a substrate formed into a chip is expressed as shown in FIG. In the above example, four examples are shown. However, the number of substrates is not limited to four, and it is possible to obtain more thin substrates by expanding the pattern shape and increasing the wafer size. Is possible. In the above example, the step of etching the pattern-like modified layers 36, 42, 43 and the two-dimensional internal modified layer 12 uses an etchant composed of an aqueous sodium hydroxide solution. An alkaline etching solution such as an aqueous potassium hydroxide solution can be applied.

  After the chipped substrate was washed with water at 80 ° C., the surface was wiped with isopropyl alcohol (IPA), electrodes were attached to the upper and lower surfaces with a commercially available silver paste, and light was emitted at a distance of 5 cm from the surface of the fluorescent lamp. When irradiated, an electromotive force of about 0.5 V has been confirmed.

  The size of the substrate 10 is not particularly limited. For example, it is preferable that the substrate 10 is made of a thick silicon wafer having a diameter of 300 mm, and the surface irradiated with the laser light 20 is planarized in advance. The substrate 10 is not limited to Si, but a sapphire substrate, a substrate obtained by epitaxially growing a GaN layer on the sapphire substrate, a GaN substrate, an AlGaN / GaN substrate, an SiC substrate, and an epitaxially grown GaN layer on the SiC substrate. A substrate, a GaAs substrate, an InP substrate, or the like is applicable.

  The laser beam 20 is irradiated on the surface of the substrate 10, not the peripheral surface, from the irradiation device (not shown) via the condenser lens 16. The laser beam 20 is composed of, for example, a pulse laser beam having a pulse width of 1 μs or less, and a wavelength of 900 nm or more, preferably 1000 nm or more is selected, and a YAG laser or the like is preferably used.

The laser beam 20 preferably has a wavelength with a light transmittance of 1 to 80% when irradiated onto a substrate having a thickness of 0.625 mm. For example, when the substrate 10 is Si, a laser beam having a wavelength of 800 nm or less has a large absorption, so that only the surface cannot be processed and the two-dimensional internal modified layer 12 cannot be formed. A wavelength of 1000 nm or more is selected. In addition, a CO ₂ laser having a wavelength of 10.64 μm has a light transmittance that is too high, so that it is difficult to process the substrate 10. Therefore, a YAG fundamental wave laser or the like is preferably used.

  The reason why the wavelength of the laser beam 20 is preferably 900 nm or more is that if the wavelength is 900 nm or more, the transmittance of the laser beam 20 to the substrate 10 made of silicon is improved, and the two-dimensional internal modified layer 12 is formed inside the substrate 10. It is because it can form reliably. The laser beam 20 is applied to the peripheral portion of the surface of the substrate 10 or from the center portion of the surface of the substrate 10 toward the peripheral portion.

  The condenser lens 16 functions to efficiently concentrate the energy of the laser light 20 inside the substrate 10. The numerical aperture (NA) of the condenser lens 16 is a large value, specifically about 0.5 or more, about 0.5 to about 0.8, from the viewpoint of preventing loss due to ablation or the like on the surface of the substrate 10. Is preferred.

  The substrate 10 and the focal point P move relatively. For this relative movement, for example, an XY stage is used as described above.

  According to the substrate processing method according to the first embodiment, instead of cutting the ingot with a wire saw, the substrate 10 is thinly formed and peeled off by the laser beam 20 that can exceed the limit of contact processing. A substrate 10 such as a thin semiconductor wafer having a thickness of 0.1 mm or less can be easily manufactured in a short time, and since the thin substrate 10 can be obtained, there is little waste and the product rate is remarkably improved. Can do.

  Further, since the thin substrate 10 can be easily manufactured from the stage of the previous process, it is not necessary to subject the substrate 10 to the back grinding process for a long time, and there is no possibility that the fine grinding residue contaminates the circuit pattern on the substrate. .

  Further, even when the semiconductor wafer or the ingot is SiC having a high hardness, it is possible to easily manufacture a thin semiconductor wafer.

  In the substrate processing method according to the first embodiment, the condensing lens 16 is used. However, when the condensing lens 16 having a large numerical aperture is used, the condensing spot at the focal point of the laser light 20 becomes small. Therefore, in order to continuously form the two-dimensional internal modified layer 12 inside the substrate 10, it is necessary to increase the number of times of irradiation with the laser light 20.

  Therefore, in the substrate processing method according to the first embodiment, as shown in FIG. 2A, an aberration enhancing material for the laser light 20 is used between the surface of the thick substrate 10 and the condenser lens 16. By irradiating the laser beam 20 with a certain aberration-enhanced glass plate 18 interposed and irradiating the aberration-enhanced glass plate 18, the number of irradiation times of the laser beam 20 is reduced.

  Further, when the condensing lens 16 designed to focus in the normal atmosphere is used, the substrate 10 having a refractive index larger than that of air, as shown in FIG. The peripheral light 20a is focused on the front surface P1 inside the substrate 10, and the outer light 20b on the outer periphery of the condenser lens 16 is focused on the point P2 deeper than that inside the substrate 10. The thickness of the internal modified layers 12, 36, 42, 43 formed by irradiation can be increased.

  In particular, the two-dimensional internal modified layer 12 can facilitate the penetration of the etchant and improve the etching rate.

  This effect can be enhanced by providing the aberration enhancing material 18 between the condenser lens 16 and the surface of the substrate 10, and further adjusting the effect by the refractive index and thickness of the aberration enhancing material 18. Is possible.

  The aberration-enhancing glass plate 18 is not particularly limited, but for example, a thick cover glass or a slide glass can be used.

  As described above, according to the substrate processing method according to the first embodiment, instead of simply irradiating the laser beam 20, the condensing spot is enlarged through the aberration-enhancing glass plate 18, and the distance between the condensing spots is increased. In addition to the above effects, the number of times of irradiation with the laser light 20 can be reduced.

  Here, the substrate 10 includes at least an ingot or a thick semiconductor wafer that is blocked to an appropriate length. The laser focusing means includes at least a concave mirror and various lenses. As the aberration enhancing material, a necessary number of glass plates can be appropriately used.

  According to the substrate processing method according to the first embodiment, since a compatible laser beam 20 is used regardless of the thickness of the substrate 10, a thin substrate can be easily manufactured in a relatively short time. Moreover, the product rate can be improved.

  Moreover, since the aberration-enhancing glass plate 18 for laser light is interposed between the surface of the substrate 10 and the condensing lens 16, the condensing spot can be enlarged to reduce the number of times of laser light irradiation.

  According to the first embodiment, it is possible to provide a substrate processing method that can simultaneously solve dicing and thinning of a die chip.

  Further, according to the first embodiment, it is possible to provide a substrate processing method capable of simultaneously forming through-holes for through vias necessary for three-dimensional mounting such as a multi-chip package (MCP). it can.

  Further, according to the first embodiment, it is possible to provide a substrate processing method capable of easily forming a thin layer substrate even on a large-area substrate such as a solar cell.

  According to the first embodiment, a thin semiconductor wafer can be easily manufactured in a relatively short time, and the relative movement direction of the laser focusing means and the substrate coincides with the cleavage direction of the substrate. Therefore, it is possible to provide a substrate processing method that can prevent the substrate from cracking and improve the product rate.

[Second Embodiment]
In the substrate processing method according to the second embodiment, the schematic cross-sectional structure of the substrate 10 in the step of forming the first patterned modified layer 50 is expressed as shown in FIG. A schematic cross-sectional structure of the substrate 10 in the step of forming the modified layer 52 and the third patterned modified layer 54 is expressed as shown in FIG.

  Further, a schematic cross-sectional structure of the substrate 10 in the process of forming the two-dimensional internal modified layer 12 is expressed as shown in FIG. 18, and the patterned modified layers 50, 52, and 54 and the two-dimensional internal modified layer are formed. A schematic cross-sectional structure for explaining the substrate 10 in the step of etching the layer 12 is expressed as shown in FIG.

  As shown in FIGS. 16 to 19, the substrate processing method according to the second embodiment includes a step of disposing the laser condensing unit 16 on the substrate 10 in a non-contact manner, and the laser condensing unit 16. A step of irradiating the surface with the laser beams 20 and 22 and condensing the laser beam 26 inside the substrate 10, and a laser beam condensing inside the substrate 10 by relatively moving the laser condensing means 16 and the substrate 10 By moving the 26 condensing points P from the deepest part of the substrate 10 on the side opposite to the laser condensing means 16 to the laser condensing means 16 side, one or more patterned modified layers 50 are formed. , 52, and 54, and the relative movement direction of the laser focusing means 16 and the substrate 10 does not coincide with the cleavage direction of the substrate 10.

  Also, after the step of forming the patterned modified layers 50, 52, 54, the step of forming the two-dimensional internal modified layer 12 inside the substrate 10 by relatively moving the laser condensing means 16 and the substrate 10. And a step of exposing the patterned modified layer 50 to the surface of the substrate 10 and a step of etching the patterned modified layers 50, 52, 54 and the two-dimensional internal modified layer 12.

  Further, in the step of forming the patterned modified layer, the patterned modified layer 50 is exposed on the surface of the substrate 10 opposite to the side on which the laser condensing means 16 is disposed by one patterned modified layer 50. It may be made like this.

  The substrate 10 is a semiconductor substrate, and after the step of forming the two-dimensional internal modified layer 12 and before the step of exposing the patterned modified layer 50 on the surface of the substrate 10, the substrate 10 has a surface opposite to the substrate 10. A step of forming a semiconductor layer 38 of the mold may be included.

  In the substrate processing method according to the second embodiment, the substrate 10 along the XY scanning direction after the step of forming the round shaped patterned modified layer 60 and the circular patterned modified layer 62 is formed. A schematic bird's-eye view structure is represented as shown in FIG. That is, the patterned modified layer 60 is formed in a square shape, and the circular patterned modified layer 62 is formed at the center of the patterned modified layer 60. The board | substrate 10 of FIG. 20 shows a mode that the surface of the board | substrate 10 shown in FIG. In FIG. 20, the patterned modified layers 60 and 62 are exposed on the substrate surface 10b. The patterned modified layers 60 and 62 correspond to the laminated structure of the patterned modified layers 50, 52, and 54 that are sequentially formed in the steps shown in FIGS. The patterned modified layers 60 and 62 can be formed with a single layer structure instead of such a laminated structure.

  In the substrate processing method according to the second embodiment, after the step of etching the patterned modified layers 60 and 62 and the two-dimensional internal modified layer 12 by the etching step shown in FIG. A schematic bird's-eye view structure for explaining the semiconductor processing substrate 66 along the Y scanning direction is represented as shown in FIG. As shown in FIG. 21, a p-type semiconductor processed substrate 66 is obtained, and a fine circular opening 64 is formed at the center of the p-type semiconductor processed substrate 66.

  In the substrate processing method according to the second embodiment, a schematic planar structure for explaining a plurality of chip-formed semiconductor processing substrates 66 is represented as shown in FIG. A schematic planar structure for explaining the substrate 66 is represented as shown in FIG.

  In the substrate processing method according to the second embodiment, by forming a plurality of round-shaped patterned modified layers 60 having a circular patterned modified layer 62 in the central portion, FIG. As shown in FIG. 5, a plurality of p-type semiconductor processed substrates 66 can be formed simultaneously. Further, by forming a relatively large area shaped modified layer 60 having a plurality of circular shaped modified layers 62, as shown in FIG. In particular, the p-type semiconductor processing substrate 66 having a large area can be formed.

  In the substrate processing method according to the second embodiment, the step of forming the two-dimensional internal modified layer 12 is performed after the step of forming the patterned modified layers 60, 62 (50, 52, 54). ing. On the other hand, in the substrate processing method according to the first embodiment, the step of forming the patterned modified layers 36, 42, 43 is performed after the step of forming the two-dimensional internal modified layer 12. The difference is that the order of the steps is reversed. Further, in the substrate processing method according to the first embodiment, the pattern of the pattern-modified layer is a square shape, whereas the pattern is a square shape at the center of the square shape. Is different. Other steps are the same as those in the first embodiment, and therefore, duplicate description of each step is omitted.

  As the substrate 10, for example, a p-type Si wafer having a size of 50 × 50 mm and a thickness of about 0.625 mm is used. For example, the (100) plane is used as the plane orientation of the Si wafer. The mirror-polished p-type Si wafer is placed on an XY stage (not shown) with the polishing surface up, with the wafer surface being shifted about 5 degrees in the Y direction from the cleavage direction C of the wafer. The X-Y scanning direction, the cleavage direction C, and the cleavage surfaces 14a to 14d of the laser light are expressed as shown in FIG.

  The process of relatively moving the condensing lens 16 and the substrate 10 to form the patterned modified layers 60 and 62 inside the substrate 10 involves moving the condensing lens 16 downward by 210 μm, and then measuring 10 mm × The pattern-like modified layer 50 is formed by repeating the drawing of the 10 mm “mouth” character pattern and the circular pattern one or more times. At this time, each vertical and horizontal line draws 10 lines at a pitch of 10 μm, thereby forming a 100 μm-wide patterned modified layer 50. The diameter of the filled circular pattern at the center of the “B” -shaped pattern is about 0.2 mm. In this state, the patterned modified layer 50 was exposed on the substrate surface 10b. Next, drawing was performed while moving the condensing lens 16 upward in 20 μm steps to form patterned modified layers 52 and 54.

  The process of forming the two-dimensional internal modified layer 12 inside the substrate 10 by relatively moving the condenser lens 16 and the substrate 10 is the same as that in the first embodiment. This is performed by condensing the laser beams 20, 22, and 26 inside the substrate 10 while sending them at a speed of 10 mm / sec in steps of 10 μm in the X direction. The focal length of the condenser lens 16 is, for example, about 2 mm and the numerical aperture is 0.8. The aberration enhancing glass plate 18 is made of, for example, glass having a thickness of 0.15 mm. At this time, the focal point was in a state where it was moved downward by 70 μm after being focused on the substrate surface. As a result, the two-dimensional internal modified layer 12 having a width of about 80 μm is formed at a depth of about 250 μm from the surface of the substrate 10. As a light source of the laser beam 20, for example, a YAG laser (10 kHz, 0.8 W) having a wavelength of 1064 μm and a pulse width of about 150 nsec can be applied. In FIG. 3, for example, the irradiation area of the laser beam is 11 mm × 11 mm.

  Next, as shown in FIG. 19, the substrate 10 is put into an etching tank 46 filled with an etching solution 44, and the patterned modified layers 50, 52, 54 and the two-dimensional internal modified layer 12 are etched. When 10% sodium hydroxide aqueous solution was applied as the etching solution 44 and etched at 60 ° C. for 2 hours, the substrate 10 was separated up and down with the two-dimensional internal modified layer 12 interposed therebetween, so that 10 mm × 10 mm One thin p-type semiconductor processed substrate 66 could be obtained. The p-type semiconductor processed substrate 66 was obtained by cutting through the substrate 10 d on the two-dimensional internal modified layer 12. As shown in FIG. 21, a recess 68 is formed in the substrate 10d that has been cut out.

  According to the second embodiment, it is possible to provide a substrate processing method that can simultaneously solve dicing and thinning of the die chip.

  In addition, according to the second embodiment, it is possible to provide a substrate processing method capable of simultaneously forming through-holes for through vias necessary for three-dimensional mounting such as MCP.

  Further, according to the second embodiment, it is possible to provide a substrate processing method capable of easily forming a thin layer substrate even on a large-area substrate such as a solar cell.

  According to the second embodiment, a thin semiconductor wafer can be easily manufactured in a relatively short time, and the relative movement direction of the laser focusing means and the substrate coincides with the cleavage direction of the substrate. Therefore, it is possible to provide a substrate processing method that can prevent the substrate from cracking and improve the product rate.

[Third embodiment]
In the substrate processing method according to the third embodiment, a schematic bird's-eye view structure of the substrate 10 along the XY scanning direction after the step of forming the fourth patterned modified layer 76 is as shown in FIG. It is expressed in

  In the processing method according to the third embodiment, in order to increase the product rate, the pattern of the “rice” shown in FIG. 6 in the processing method according to the first embodiment is further expanded, Pattern-like modified layers 70, 72, 74, and 76 are formed using a lattice pattern. Other steps are the same as those in the first embodiment, and therefore, duplicate description of each step is omitted.

  According to the third embodiment, it is possible to provide a substrate processing method that can easily manufacture a thin semiconductor wafer in a relatively short time and can improve the product rate.

(Comparative experiment example)
In the substrate processing method according to the comparative example in which the cleavage direction and the XY scanning direction coincide with each other, the XY after the step of forming the square shaped patterned modified layer 80 and the circular patterned modified layer 82 A schematic bird's-eye view structure of the substrate along the scanning direction is expressed as shown in FIG. 24, and after the step of etching the patterned modified layers 80 and 82 and the two-dimensional internal modified layer 12, the chipped X A schematic bird's-eye view structure for explaining the semiconductor processed substrate 86 along the −Y scanning direction is expressed as shown in FIG. 25.

  As the substrate 10, for example, a p-type Si wafer having a size of 50 × 50 mm and a thickness of about 0.625 mm is used. For example, the (100) plane is used as the plane orientation of the Si wafer. The mirror-polished p-type Si wafer is placed on an XY stage (not shown) with the polishing surface up, with the wafer surface being shifted about 0.5 degrees in the Y direction from the cleavage direction C of the wafer. Since the X-Y scanning direction, the cleavage direction C, and the cleavage planes 14a to 14d of the laser light substantially coincide with each other, it can be considered that they are represented as shown in FIG.

  The step of moving the condenser lens 16 and the substrate 10 relatively to form the patterned modified layers 80 and 82 inside the substrate 10 includes moving the condenser lens 16 downward 210 μm and then outputting the laser beam. At 1 W, drawing a “mouth” shape pattern and a circular pattern having a size of 10 mm × 10 mm is repeated one or more times to form the patterned modified layers 80 and 82. At this time, each vertical and horizontal line draws 10 lines at a pitch of 10 μm to form 100 μ-width patterned modified layers 80 and 82, and the diameter of the filled circular pattern at the center of the “B” -shaped pattern is , About 0.2 mm.

  The process of moving the condensing lens 16 and the substrate 10 relatively to form the two-dimensional internal modified layer 12 inside the substrate 10 is the same as in the first embodiment.

  However, when the two-dimensional internal modified layer 12 was to be formed, the substrate 10 was cracked along the Y direction during the formation of the two-dimensional internal modified layer 12 by laser light irradiation. From the cracked place, the output of the laser beam was reduced to 0.7 W, and the irradiation was continued to obtain the substrate 10 on which the two-dimensional internal modified layer 12 of 11 mm × 11 mm was formed.

  Pattern-modified layers 80 and 82 were created in the same manner as in the first embodiment with a 10 mm × 10 mm “U” -shaped pattern having an opening of the cleaved surface 14 a of the substrate 10 and an output of 0.7 W. Cleavage occurred again in the direction of the opening of the letter “U”.

  Finally, the substrate 10 with the two-dimensional internal modified layer 12 exposed on the 10 mm × 10 mm side wall is cut out from this wafer, etched for 2 hours under the same conditions as in Example 1, and peeled into two upper and lower sheets. I was able to.

  As a result, a semiconductor processed substrate 86 formed into a chip having an opening 84 at the center was obtained. As shown in FIG. 25, a recess 88 is formed in the substrate 10d that has been cut out. As described above, in the substrate processing method according to the comparative example in which the cleavage direction and the XY scanning direction coincide with each other, even if the output of the laser beam is adjusted, the substrate is significantly cracked. difficult.

[Other embodiments]
As described above, the present invention has been described according to the first to third embodiments. However, it should be understood that the descriptions and drawings constituting a part of this disclosure are exemplary and limit the present invention. should not do. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

  For example, in the substrate processing method according to the first embodiment, an example of forming a pattern-shaped modified layer having a square shape has been disclosed. However, as in the second embodiment, one or a plurality of circular shapes are disclosed. A round shaped patterned modified layer having a shaped patterned layer may be formed.

  As described above, the present invention includes various embodiments not described herein.

  Since the substrate can be efficiently thinned by the substrate processing method of the present invention, a thinly cut semiconductor wafer can be applied to a solar cell as long as it is a Si substrate, and sapphire such as a GaN-based semiconductor device. If it is a substrate, etc., it can be applied to light emitting diodes, laser diodes, etc., if it is SiC, it can be applied to SiC-based power devices, etc., and wide fields such as transparent electronics field, lighting field, hybrid / electric vehicle field, etc. Is applicable.

10, 10u, 10d ... substrate (semiconductor wafer)
10a, 10b ... substrate surface 12 ... two-dimensional internal modified layers 14a, 14b, 14c, 14d ... cleavage plane 16 ... condensing lens (laser condensing means)
18. Aberration-enhancing glass plate (aberration-enhancing material)
20, 20a, 20b, 22, 26 ... laser beam 24 ... laser spots 36, 42, 43, 50, 52, 54, 60, 62, 70, 72, 74, 76, 80, 82 ... patterned modified layer 38 ... Conductive polymer layer (semiconductor layer)
40 ... Protective layer 44 ... Etching solution 46 ... Etching tanks 64, 84 ... Openings 66, 86 ... Semiconductor processing substrates 68, 88 ... Recesses

Claims (9)

Arranging the laser focusing means on the substrate in a non-contact manner;
Irradiating the surface of the substrate with laser light by the laser condensing means, and condensing the laser light inside the substrate;
A step of relatively moving the laser condensing means and the substrate to form a two-dimensional internal modified layer inside the substrate, and a relative moving direction of the laser condensing means and the substrate Does not coincide with the cleavage direction of the substrate. By relatively moving the laser condensing means and the substrate, at least one layer of pattern modification on the laser condensing means side and / or on the side opposite to the laser condensing means of the two-dimensional internal modification layer Forming a layer;
Exposing the patterned modified layer on the substrate surface;
The substrate processing method according to claim 1, further comprising: etching the patterned modified layer and the two-dimensional internal modified layer.   The step of forming the patterned modified layer is patterned on the two-dimensional internal modified layer by moving the condensing point of the laser beam condensed inside the substrate to the laser condensing means side. The substrate processing method according to claim 1, further comprising a step of forming one or more of the patterned modified layers.   The step of exposing the patterned modified layer on the surface of the substrate is performed by moving a condensing point of laser light condensed inside the substrate to the laser condensing means side, and finally the pattern on the substrate surface. 4. The substrate processing method according to claim 2, further comprising a step of forming a modified layer.   The substrate is a semiconductor substrate, and after the step of forming the patterned modified layer and before the step of exposing the patterned modified layer on the substrate surface, a semiconductor layer having a conductivity type opposite to the substrate on the substrate surface The substrate processing method according to claim 2, further comprising a step of forming the substrate. Arranging the laser focusing means on the substrate in a non-contact manner;
Irradiating the surface of the substrate with laser light by the laser condensing means, and condensing the laser light inside the substrate;
From the state in which the laser condensing means and the substrate are relatively moved, and the condensing point of the laser beam condensed inside the substrate is set at the deepest portion of the substrate opposite to the laser condensing means, A step of forming one or more patterned modified layers by moving toward the laser focusing means, and the relative movement direction of the laser focusing means and the substrate is A substrate processing method characterized by not coincident with a cleavage direction. After the step of forming the patterned modified layer, relatively moving the laser focusing means and the substrate to form a two-dimensional internal modified layer inside the substrate;
Exposing the patterned modified layer on the substrate surface;
The substrate processing method according to claim 6, further comprising: etching the patterned modified layer and the two-dimensional internal modified layer.   8. The patterned modified layer is exposed on the surface of the substrate opposite to the side on which the laser focusing means is disposed by the one layer of the patterned modified layer. Substrate processing method.   The substrate is a semiconductor substrate, and after the step of forming the two-dimensional internal modified layer and before the step of exposing the patterned modified layer on the substrate surface, the substrate surface has a conductivity type opposite to that of the substrate. 9. The substrate processing method according to claim 7, further comprising a step of forming a semiconductor layer.

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