JP2011154242A - Liquid crystal display device and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a liquid crystal display device in which corrosion of an electrode caused by peeling of an organic film is suppressed. <P>SOLUTION: The liquid crystal display device 100 includes: a substrate 1; a thin film transistor 16 formed on the surface of the substrate 1; a flattening film 17 formed so as to cover the surface of the thin film transistor 16; a conductive layer 19 provided so as to cover at least a boundary region between a lower end part 17b of a side end surface of the flattening film 17 and an upper surface of a gate insulating film 12 on which the flattening film 17 is provided; and a low temperature passivation film 20a provided so as to cover at least a boundary region between an end part on the end part side of the substrate 1 of the conductive layer 19 and the upper surface of the gate insulating film 12. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a liquid crystal display device and an electronic device, and more particularly, to a liquid crystal display device and an electronic device including an organic film formed so as to cover the surface of a thin film transistor.

  Conventionally, a liquid crystal display device including an organic film formed so as to cover the surface of a thin film transistor is known (for example, see Patent Document 1). In the liquid crystal display device described in Patent Document 1, an interlayer resin film (organic film) is formed so as to directly cover the surface of the thin film transistor and to cover the gate insulating film formed on substantially the entire surface of the substrate. On the surface of the interlayer resin film, a pixel electrode, an interelectrode insulating film, and a common electrode are laminated in this order.

JP 2009-151285 A

  However, in the liquid crystal display device described in Patent Document 1, there is a possibility that the interlayer resin film that directly covers the surface of the thin film transistor may be peeled off and the interelectrode insulating film may be peeled off. When moisture enters the thin film transistor from the interface with the electrode, there is a problem that the electrodes constituting the thin film transistor are corroded.

  The present invention has been made to solve the above-described problems, and one object of the present invention is to suppress the corrosion of the electrode due to the peeling of the organic film. Liquid crystal display device and electronic apparatus.

Means for Solving the Problems and Effects of the Invention

  In order to achieve the above object, a liquid crystal display device according to a first aspect of the present invention includes a substrate, a thin film transistor formed on the surface of the substrate, an organic film formed so as to cover the surface of the thin film transistor, The boundary region between the conductive layer provided to cover at least the boundary region between the lower end of the side end surface of the film and the upper surface of the lower layer on which the organic film is provided, and the upper end of the conductive layer on the substrate side and the upper surface of the lower layer And a first insulating film provided to cover at least.

  In the liquid crystal display device according to the first aspect, as described above, the organic film is formed by providing a conductive layer covering at least the boundary region between the lower end portion of the side end surface of the organic film and the upper surface of the lower layer on which the organic film is provided. Separation can be suppressed by the conductive layer. In addition, by providing a first insulating film that covers at least the boundary region between the end of the conductive layer on the substrate end side and the upper surface of the lower layer, the first insulating film suppresses the conductive layer from being separated from the organic film. be able to. As a result, the organic film can be further prevented from being peeled off, so that the electrodes constituting the thin film transistor can be prevented from corroding due to the organic film being peeled off.

  In the liquid crystal display device according to the first aspect, preferably, the first insulating film is formed so as to extend to an end portion of the substrate, and the conductive layer is formed inside the end portion of the substrate, The first insulating film is formed so as to cover the upper surface and the side surface of the conductive layer. If comprised in this way, since it can suppress by a 1st insulating film that a conductive layer is exposed, it can suppress that a conductive layer corrodes with a water | moisture content. As a result, the conductive layer can be further prevented from peeling from the organic film.

  In the liquid crystal display device according to the first aspect, the first insulating film is preferably provided so as to cover a boundary region between the end of the conductive layer opposite to the end of the substrate and the surface of the organic film. Yes. If comprised in this way, while the edge part of the board | substrate part of a conductive layer can suppress from the surface of an organic film by a 1st insulating film, the edge part on the opposite side to the edge part of a board | substrate of a conductive layer is the organic film. Separation from the surface can be suppressed by the first insulating film. As a result, the conductive layer can be further prevented from peeling from the organic film.

  In the liquid crystal display device according to the first aspect, preferably, the lower layer is formed so as to extend to an end portion of the substrate, includes a gate insulating film that configures the thin film transistor, and the organic film includes the source electrode and the drain that configure the thin film transistor. The electrode layer is formed so as to directly cover the surface of the electrode and the gate insulating film, and the conductive layer is provided so as to cover at least a boundary region between the lower end portion of the side end surface of the organic film and the upper surface of the gate insulating film. The insulating film is provided so as to cover at least the boundary region between the end of the conductive layer on the end side of the substrate and the upper surface of the gate insulating film. If comprised in this way, even if a 1st insulating film peels, since the boundary area | region of the lower end part of the side end surface of an organic film and the upper surface of the gate insulating film in which an organic film is provided is covered with the conductive layer, Peeling of the first insulating film due to peeling of the organic film can be suppressed. This can prevent the source electrode and the drain electrode from corroding due to moisture intrusion from the organic film interface.

  In the liquid crystal display device according to the first aspect, preferably, the organic film includes a planarizing film for substantially planarizing a surface of the substrate on which the thin film transistor is formed, and the conductive layer includes a side end surface of the planarizing film. The flattening film is formed so as to cover a part of the substantially flat upper surface of the flattening film connected to the side end face of the flattening film. If comprised in this way, since the contact area of a conductive layer and an organic film becomes large, it can further suppress that a conductive layer peels from an organic film.

  In the liquid crystal display device according to the first aspect, preferably, the liquid crystal display device further includes a first transparent electrode provided on the surface of the organic film and constituting one of the pixel electrode or the common electrode, and the conductive layer is a first transparent electrode. It is formed from the same layer as the electrode. If comprised in this way, since a conductive layer and the 1st transparent electrode which comprises one of a pixel electrode or a common electrode can be formed by the same manufacturing process, peeling of an organic film is suppressed easily. A conductive layer can be formed.

  In this case, preferably, a second insulating film provided on the surface of the first transparent electrode, and a second transparent electrode provided on the surface of the second insulating film and constituting the other of the pixel electrode or the common electrode, The first insulating film provided on the surface of the conductive layer is formed of the same layer as the second insulating film provided between the first transparent electrode and the second transparent electrode. If comprised in this way, since the 1st insulating film and the 2nd insulating film provided between a 1st transparent electrode and a 2nd transparent electrode can be formed by the same manufacturing process, it is easy to organically A first insulating film for suppressing peeling of the film and the conductive layer can be formed.

  In the liquid crystal display device according to the first aspect, preferably, the substrate is formed in a substantially rectangular shape when seen in a plan view, and the conductive layer is at least one of three sides on which at least the integrated circuit of the substrate is not provided. It is provided so as to extend along the side. If comprised in this way, it can suppress by an electroconductive layer that at least 1 side of the 3 sides in which an integrated circuit is not provided among the outer peripheral parts of an organic film peels.

  An electronic apparatus according to a second aspect of the present invention includes a liquid crystal display device having any one of the above-described configurations. If comprised in this way, an electronic device provided with the liquid crystal display device which can suppress that an electrode corrodes resulting from peeling of an organic film can be obtained.

1 is a plan view of a liquid crystal display device according to an embodiment of the present invention. 1 is a plan view of a pixel of a liquid crystal display device according to an embodiment of the present invention. It is sectional drawing along the 200-200 line | wire of FIG. 1 is an enlarged plan view of a liquid crystal display device according to an embodiment of the present invention. It is sectional drawing for demonstrating the process of forming the layer below the planarization film | membrane in the manufacturing process of the liquid crystal display device by one Embodiment of this invention. It is sectional drawing for demonstrating the process of forming the transparent conductive film in the manufacturing process of the liquid crystal display device by one Embodiment of this invention. It is sectional drawing for demonstrating the process of forming the conductive layer in the manufacturing process of the liquid crystal display device by one Embodiment of this invention. It is sectional drawing for demonstrating the process of forming the low-temperature passivation film in the manufacturing process of the liquid crystal display device by one Embodiment of this invention. It is sectional drawing for demonstrating the process after forming the low-temperature passivation film in the manufacturing process of the liquid crystal display device by one Embodiment of this invention. It is a figure for demonstrating the 1st example of the electronic device using the liquid crystal display device by one Embodiment of this invention. It is a figure for demonstrating the 2nd example of the electronic device using the liquid crystal display device by one Embodiment of this invention. It is a figure for demonstrating the 3rd example of the electronic device using the liquid crystal display device by one Embodiment of this invention.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

  With reference to FIGS. 1-4, the structure of the liquid crystal display device 100 by one Embodiment of this invention is demonstrated.

  As shown in FIG. 1, the liquid crystal display device 100 according to the present embodiment includes a substrate 1 made of a transparent material such as glass and a substrate 2 made of a transparent material such as glass so as to face the substrate 1. . In addition, the board | substrate 1 and the board | substrate 2 are formed in the substantially rectangular shape seeing planarly. Further, the liquid crystal display device 100 is provided with a plurality of pixels 3 arranged in a matrix. A driving IC 4 is provided on the surface of the substrate 1. The drive IC 4 is an example of the “integrated circuit” in the present invention. The liquid crystal display device 100 includes a display area 5 in which a plurality of pixels 3 are provided and a non-display area 6 that surrounds the display area 5. A backlight 7 (see FIG. 3) is provided so as to face the substrate 1.

As a cross-sectional structure of the pixel 3, a gate electrode 11 is formed on the surface of the substrate 1 as shown in FIG. 3. A gate insulating film 12 made of SiN or the like is formed on the surface of the gate electrode 11 and the substrate 1. The gate insulating film 12 is formed up to the end of the substrate 1 on the arrow X1 direction (arrow X2 direction) side. The gate insulating film 12 is an example of the “lower layer” in the present invention. A semiconductor layer 13 is formed on the surface of the gate insulating film 12. The semiconductor layer 13 is formed from amorphous silicon (a-Si). The semiconductor layer 13 includes a source region and a drain region made of amorphous silicon (n ⁺ a-Si) into which an n-type impurity is introduced, for example. A source electrode 14 and a drain electrode 15 are formed on the semiconductor layer 13. The gate electrode 11, the gate insulating film 12, the semiconductor layer 13, the source electrode 14 and the drain electrode 15 constitute a bottom gate type thin film transistor 16. The source electrode 14 is connected to the signal line 14a (see FIG. 2).

  Further, a planarizing film 17 made of a photosensitive acrylic resin is formed so as to directly cover the source electrode 14 and the drain electrode 15 and the gate insulating film 12. The planarizing film 17 is an example of the “organic film” in the present invention. Further, the planarizing film 17 has a thickness t1 of about 2 μm or more and about 3 μm or less. The planarizing film 17 is provided to make the surface of the substrate 1 substantially flat. A contact hole 17 a is formed in the planarizing film 17 so as to expose the drain electrode 15.

  Further, in the vicinity of the end portion of the substrate 1 (the non-display region 6 of the liquid crystal display device 100), the planarizing film 17 is removed, and the side end surface of the planarizing film 17 is formed in a tapered shape that extends toward the substrate 1. Has been. Further, the side end surface of the planarizing film 17 is formed so as to be spaced inward from the end portion of the substrate 1 in a plan view.

  In the display region 5 of the liquid crystal display device 100, a pixel electrode 18 made of a transparent electrode such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide) is formed so as to cover the planarizing film 17. The pixel electrode 18 has a thickness of about 50 nm to about 150 nm. Further, the pixel electrode 18 and the drain electrode 15 are connected through the contact hole 17 a of the planarizing film 17. The pixel electrode 18 is an example of the “first transparent electrode” in the present invention.

  Here, in the first embodiment, in the vicinity of the end portion of the substrate 1 (the non-display region 6 of the liquid crystal display device 100), the boundary region between the lower end portion 17 b of the side end surface of the planarization film 17 and the upper surface of the gate insulating film 12. A conductive layer 19 is formed to cover the boundary A between the planarization film 17 and the gate insulating film 12 (see FIG. 4). Specifically, the conductive layer 19 is connected to the side end face of the planarizing film 17, the substantially flat upper surface of the planarizing film 17 connected to the side end face of the planarizing film 17, and the side end face of the planarizing film 17. It is formed so as to cover the upper surface of the gate insulating film 12 to be formed. Thereby, the conductive layer 19 has a width W1 of about 5 μm or more and about 50 μm or less in plan view. The conductive layer 19 is formed of the same layer as the pixel electrode 18 (a transparent electrode such as ITO or IZO). Note that the conductive layer 19 is electrically separated from the pixel electrode 18. Further, as shown in FIG. 1, the conductive layer 19 is provided so as to extend along three sides of the outer peripheral portion of the planarization film 17 where the driving IC 4 of the substrate 1 is not provided in a plan view. ing. As will be described later, the conductive layer 19 is formed by sputtering, and the conductive layer 19 has higher adhesion to the planarization film 17 than the low-temperature passivation film 20 formed by CVD. It is formed more difficult to peel off from the planarizing film 17.

  A low temperature passivation film 20 made of SiN or the like is formed on the surface of the pixel electrode 18. The low-temperature passivation film 20 is an example of the “second insulating film” in the present invention. Here, in the first embodiment, even in the vicinity of the end portion of the substrate 1 (non-display region 6), the end portion of the conductive layer 19 on the end portion side (arrow X1 direction side) of the conductive layer 19 and the upper surface of the gate insulating film 12 are used. A low-temperature passivation film 20a is formed so as to cover the boundary region between the first and second layers (see the plan view B, the boundary B between the conductive layer 19 and the gate insulating film 12, see FIG. 4). The low-temperature passivation film 20a is an example of the “first insulating film” in the present invention. The low temperature passivation film 20 a is made of the same layer as the low temperature passivation film 20 formed on the surface of the pixel electrode 18. Further, the low temperature passivation film 20 a is formed in a state of being continuous with the low temperature passivation film 20. The low-temperature passivation film 20 a covers the boundary region between the end of the conductive layer 19 opposite to the end of the substrate 1 (arrow X2 direction side) and the surface of the planarization film 17 and the upper surface of the conductive layer 19. It is formed as follows.

  In the first embodiment, as shown in FIG. 3, the low-temperature passivation film 20 (20a) is formed to extend to the end of the substrate 1 (three sides where the drive IC 4 of the substrate 1 is not provided). On the other hand, the conductive layer 19 is formed inside the end portion of the substrate 1. The low-temperature passivation film 20a covers the upper surface of the conductive layer 19 and also covers the side surfaces. That is, the upper surface and side surfaces of the conductive layer 19 are configured not to be exposed.

  A common electrode 21 made of a transparent electrode such as ITO is formed on the surface of the low-temperature passivation film 20 so as to straddle the plurality of pixels 3. The common electrode 21 is an example of the “second transparent electrode” in the present invention. The common electrode 21 has a thickness of about 50 nm or more and about 150 nm or less. As shown in FIG. 2, the common electrode 21 is provided with a plurality of slits 21a, and an electric field is generated between the pixel electrode 18 and the common electrode 21 through the slits 21a. Yes. Thus, an FFS (Fringe Field Switching) type liquid crystal display device 100 in which the liquid crystal is driven by a horizontal electric field between the pixel electrode 18 and the common electrode 21 is configured. An alignment film made of an organic film such as polyimide (not shown) is formed on the surface of the common electrode 21.

  As shown in FIG. 3, a black matrix 31 made of resin or the like is formed on the surface of the substrate 2 on the substrate 1 side. The black matrix 31 is formed on the boundary of the pixel 3 in a plan view and is formed in a matrix. A color filter 32 is formed on the surface of the substrate 2 and the black matrix 31. An overcoat 33 as a protective film is formed on the surfaces of the black matrix 31 and the color filter 32. An alignment film (not shown) made of an organic film such as polyimide is formed on the surface of the overcoat 33. A sealing material 34 is provided between the alignment film on the substrate 1 side and the alignment film on the substrate 2 side, and the substrate 1 and the substrate 2 are bonded together. A liquid crystal layer 35 is sealed between the alignment film on the substrate 1 side and the alignment film on the substrate 2 side.

  Next, a manufacturing process of the liquid crystal display device 100 according to the present embodiment will be described with reference to FIGS.

  First, as shown in FIG. 5, the gate electrode 11 is formed on the surface of the large substrate 1a. Next, a gate insulating film 12 made of SiN or the like is formed on the surface of the gate electrode 11 and the substrate 1a by a CVD (Chemical Vapor Deposition) method. The gate insulating film 12 is formed on substantially the entire surface of the substrate 1a. Then, the semiconductor layer 13 is formed so as to overlap the gate electrode 11 in plan view with the gate insulating film 12 interposed therebetween. Next, the source electrode 14 and the drain electrode 15 are formed on the semiconductor layer 13 so as to overlap with the gate electrode 11 and the semiconductor layer 13 in plan view. Thereby, the thin film transistor 16 is formed.

  Next, a planarizing film 17 as a protective film made of an acrylic photosensitive resin is formed on the surfaces of the thin film transistor 16 and the gate insulating film 12 by a coating method. The planarizing film 17 is formed on substantially the entire surface of the substrate 1a. Then, the planarizing film 17 on the end of the non-display area 6 (near the dividing line when dividing the large-sized substrate 1a) is removed by, for example, a photolithography technique. At the same time as removing the end portion of the planarizing film 17, a contact hole 17 a is formed in the planarizing film 17 so that the drain electrode 15 of the thin film transistor 16 is exposed.

  Next, as shown in FIG. 6, on the surface of the planarizing film 17, the exposed surface of the drain electrode 15, and the exposed surface of the gate insulating film 12 are made of ITO, IZO, or the like by sputtering. A transparent conductive film 41 is formed. A part of the transparent conductive film 41 is electrically connected to the drain electrode 15 through the contact hole 17a.

  Next, after forming a resist (not shown) on the surface of the transparent conductive film 41, a part of the transparent conductive film 41 is removed by etching to form the pixel electrode 18 in the display region 5 as shown in FIG. In addition, a conductive layer 19 that is electrically separated from the pixel electrode 18 is formed in the non-display area 6. That is, in this embodiment, the pixel electrode 18 and the conductive layer 19 are formed from the same layer. The conductive layer 19 is formed so as to cover a boundary region between the lower end portion 17 b of the side end surface of the planarizing film 17 and the upper surface of the gate insulating film 12. Specifically, the conductive layer 19 is formed on the side end face of the planarizing film 17, the substantially flat upper face of the planarizing film 17 connected to the side end face, and the upper face of the gate insulating film 12 connected to the side end face. It is formed. In addition, the conductive layer 19 is formed so as to extend along three sides (see FIG. 1) of the outer periphery of the planarization film 17 where the driving IC 4 of the substrate 1 is not provided as viewed in a plan view. Thereafter, the resist is removed.

  Next, as shown in FIG. 8, a low-temperature passivation film 20 (20a) made of SiN or the like is formed on the surfaces of the pixel electrode 18 and the conductive layer 19 by CVD. Thereby, in the present embodiment, the low-temperature passivation film 20a is formed so as to cover the boundary region between the end of the conductive layer 19 on the dividing line side (arrow X1 direction side) and the upper surface of the gate insulating film 12, It is formed so as to cover the boundary region between the end of the conductive layer 19 opposite to the dividing line (arrow X2 direction side) and the surface of the planarization film 17. The low-temperature passivation film 20a is formed so as to straddle the non-display area 6 of the liquid crystal display device 100 adjacent to each other.

  Then, as shown in FIG. 9, a common electrode 21 made of ITO, IZO or the like and having a plurality of slits 21a is formed on the surface of the low-temperature passivation film 20 (20a) by sputtering and etching. Next, an alignment film (not shown) made of polyimide or the like is formed on the surface of the common electrode 21 by a coating method.

  Next, a black matrix 31 is formed by forming and etching a film made of, for example, a black resin material on the surface of the large substrate 2a. Thereafter, red (R), green (G), and blue (B) color filters 32 are formed for each pixel 3 (see FIG. 1) by photolithography. Next, an overcoat 33 made of an acrylic photosensitive resin is formed on the surfaces of the black matrix 31 and the color filter 32 by a coating method. Thereafter, an alignment film (not shown) made of polyimide or the like is formed on the surface of the overcoat 33.

  Next, for example, by a dispenser method, the sealing material 34 is applied on the surface of the alignment film (not shown), and the substrate 1a and the substrate 2a are bonded together.

  Finally, the substrate 1a and the substrate 2a are divided along the dividing line, and the liquid crystal layer 35 is injected between the substrate 1a and the substrate 2a. Here, at the time of division, the low-temperature passivation film 20 (20a) is divided so that the upper surface and the side surface of the conductive layer 19 are covered with the low-temperature passivation film 20 (20a). Then, by attaching the drive IC 4 and the backlight 7, the transverse electric field mode liquid crystal display device 100 (see FIG. 1) is completed.

  In the present embodiment, as described above, by providing the conductive layer 19 covering the boundary region between the lower end portion 17b of the side end face of the planarizing film 17 and the upper surface of the gate insulating film 12 on which the planarizing film 17 is provided, the planarization is performed. The conductive layer 19 can suppress the peeling of the chemical film 17. Further, by providing the low temperature passivation film 20 a that covers the boundary region between the end of the conductive layer 19 on the end side of the substrate 1 and the upper surface of the gate insulating film 12, the conductive layer 19 is separated from the planarization film 17. It can be suppressed by the low-temperature passivation film 20a. As a result, the planarization film 17 can be further prevented from being peeled off, so that the source electrode 14 and the drain electrode 15 constituting the thin film transistor 16 are not corroded due to the planarization film 17 being peeled off. Can be suppressed.

  In the present embodiment, as described above, the low-temperature passivation film 20a is formed so as to extend to the end portion of the substrate 1, and the conductive layer 19 is formed on the inner side of the end portion of the substrate 1, so that the low-temperature passivation film 20a is formed. A passivation film 20 a was formed so as to cover the upper surface and side surfaces of the conductive layer 19. Thereby, since exposure of the conductive layer 19 can be suppressed by the low-temperature passivation film 20a, the conductive layer 19 can be prevented from being corroded by moisture or the like. As a result, the conductive layer 19 can be further prevented from peeling from the planarizing film 17.

  In the present embodiment, as described above, the low-temperature passivation film 20a is formed not only on the boundary region between the end of the conductive layer 19 on the side of the substrate 1 and the upper surface of the gate insulating film 12, but also on the conductive layer 19. The boundary region between the end opposite to the end of the substrate 1 and the surface of the planarizing film 17 was also provided. Accordingly, the low temperature passivation film 20a can prevent the end of the conductive layer 19 from the substrate 1 from being peeled off from the surface of the planarizing film 17, and the end of the conductive layer 19 opposite to the end of the substrate 1 is flat. Separation from the surface of the chemical film 17 can be suppressed by the low-temperature passivation film 20a. As a result, the conductive layer 19 can be further prevented from peeling from the planarizing film 17.

  In the present embodiment, as described above, the planarizing film 17 is formed so as to directly cover the surfaces of the source electrode 14 and the drain electrode 15 constituting the thin film transistor 16, and the conductive layer 19 is formed into the planarizing film 17. The low-temperature passivation film 20a is provided so as to cover the boundary region between the lower end portion 17b of the side end surface of the gate insulating film 12 and the upper surface of the gate insulating film 12, and the end portion of the conductive layer 19 on the end portion side of the substrate 1 It provided so that the boundary area | region with an upper surface might be covered. Thereby, even when the low temperature passivation film 20a is peeled off, the boundary region between the lower end portion 17b of the side end face of the planarizing film 17 and the upper surface of the gate insulating film 12 on which the planarizing film 17 is provided is covered with the conductive layer 19. Therefore, it is possible to prevent the planarization film 17 from being peeled and the source electrode 14 and the drain electrode 15 from being exposed.

  In the present embodiment, as described above, the conductive layer 19 covers the side end surface of the planarizing film 17 and the substantially flat upper surface of the planarizing film 17 connected to the side end surface of the planarizing film 17. Formed. As a result, the contact area between the conductive layer 19 and the planarizing film 17 is increased, so that the conductive layer 19 can be further prevented from peeling from the planarizing film 17.

  In the present embodiment, the conductive layer 19 is formed from the same layer as the pixel electrode 18 as described above. Thereby, since the conductive layer 19 and the pixel electrode 18 can be formed by the same manufacturing process, the conductive layer 19 for suppressing peeling of the planarization film 17 can be easily formed.

  In the present embodiment, as described above, the low-temperature passivation film 20 a provided on the surface of the conductive layer 19 is formed from the same layer as the low-temperature passivation film 20 provided between the pixel electrode 18 and the common electrode 21. did. Accordingly, the low-temperature passivation film 20a provided on the surface of the conductive layer 19 and the low-temperature passivation film 20 provided between the pixel electrode 18 and the common electrode 21 can be formed by the same manufacturing process. In addition, a low-temperature passivation film 20a for suppressing peeling of the planarizing film 17 and the conductive layer 19 can be formed.

  In the present embodiment, as described above, the conductive layer 19 is provided so as to extend along three sides of the substrate 1 where the drive IC 4 is not provided. Thereby, it is possible to prevent the conductive layer 19 from peeling off at least three sides where the driving IC 4 is not provided in the outer peripheral portion of the planarizing film 17.

  10 to 12 are diagrams for explaining first to third examples of electronic devices using the liquid crystal display device 100 according to the present embodiment. The electronic apparatus using the liquid crystal display device 100 according to the present embodiment will be described with reference to FIGS.

  As shown in FIGS. 10 to 12, the liquid crystal display device 100 according to the present embodiment includes a PC (Personal Computer) 300 as a first example, a mobile phone 400 as a second example, and a third example. It can be used for the personal digital assistant 500 (PDA: Personal Digital Assistants).

  In the PC 300 according to the first example of FIG. 10, the liquid crystal display device 100 according to the present embodiment can be used for the display screen 310 or the like. In the mobile phone 400 according to the second example of FIG. 11, the liquid crystal display device 100 according to the present embodiment can be used for the display screen 410. In the portable information terminal 500 according to the third example of FIG. 12, the liquid crystal display device 100 according to the present embodiment can be used for the display screen 510.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the embodiments but by the scope of claims for patent, and further includes all modifications within the meaning and scope equivalent to the scope of claims for patent.

  For example, in the above-described embodiment, the conductive layer includes the side end surface of the planarization film, the flat upper surface of the planarization film connected to the side end surface, and the upper surface of the gate insulating film connected to the side end surface of the planarization film. However, the present invention is not limited to this. In the present invention, the conductive layer may be formed so as to cover at least the boundary region between the lower end portion of the side end face of the planarizing film and the upper surface of the lower insulating film of the planarizing film.

  In the above embodiment, an example in which the low-temperature passivation film is formed so as to cover the upper surface and the side surface of the conductive layer has been described, but the present invention is not limited to this. In the present invention, the low-temperature passivation film may be formed so as to cover at least the boundary region between the end portion of the conductive layer on the substrate end side and the upper surface of the lower insulating film of the planarization film.

  Further, in the above-described embodiment, the example in which the conductive layer is provided so as to extend along the three sides where the driving IC of the substrate is not provided is shown, but the present invention is not limited to this. For example, the conductive layer may be provided so as to extend along one or two of the three sides where the driving IC of the substrate is not provided. Further, the conductive layer may be provided so as to extend along the side where the substrate driving IC is provided, as well as the side where the substrate driving IC is not provided.

  In the above embodiment, the conductive layer is formed of the same layer as the pixel electrode. However, the present invention is not limited to this. In the present invention, a common electrode may be provided on the surface of the planarizing film, and the conductive layer may be formed of the same layer as the common electrode.

  In the above embodiment, an example in which the semiconductor layer is formed of amorphous silicon (a-Si) has been described. However, the present invention is not limited to this. For example, the semiconductor layer may be formed from polysilicon (p-Si).

  DESCRIPTION OF SYMBOLS 1 Substrate 4 Drive IC (integrated circuit) 12 Gate insulating film (lower layer) 16 Thin film transistor 17 Flattened film (organic film) 17b Lower end 18 Pixel electrode (first transparent electrode) 19 Conductive layer 20 Low-temperature passivation film (second insulating film) 20a Low-temperature passivation film (first insulating film) 21 Common electrode (second transparent electrode)

Claims (9)

A substrate,
A thin film transistor formed on the surface of the substrate;
An organic film formed to cover the surface of the thin film transistor;
A conductive layer provided to cover at least a boundary region between a lower end portion of a side end surface of the organic film and an upper surface of a lower layer on which the organic film is provided;
A liquid crystal display device comprising: a first insulating film provided to cover at least a boundary region between an end portion of the conductive layer on the end portion side of the substrate and an upper surface of the lower layer. The first insulating film is formed so as to extend to an end portion of the substrate, and the conductive layer is formed on an inner side than the end portion of the substrate,
The liquid crystal display device according to claim 1, wherein the first insulating film is formed so as to cover an upper surface and a side surface of the conductive layer.   The said 1st insulating film is provided so that the boundary area | region with the edge part on the opposite side to the edge part of the said board | substrate of the said conductive layer and the surface of the said organic film may be covered. Liquid crystal display device. The lower layer is formed so as to extend to an end portion of the substrate, and includes a gate insulating film constituting the thin film transistor,
The organic film is formed so as to directly cover the surfaces of the source electrode and the drain electrode constituting the thin film transistor and to cover the gate insulating film,
The conductive layer is provided so as to cover at least a boundary region between a lower end portion of a side end surface of the organic film and an upper surface of the gate insulating film,
4. The device according to claim 1, wherein the first insulating film is provided so as to cover at least a boundary region between an end portion of the conductive layer on the end portion side of the substrate and an upper surface of the gate insulating film. The liquid crystal display device according to item. The organic film includes a planarization film for making the surface of the substrate on which the thin film transistor is formed substantially flat,
The conductive layer is formed so as to cover a side end face of the planarizing film and a part of a substantially flat upper surface of the planarizing film connected to the side end face of the planarizing film. The liquid crystal display device of any one of -4. A first transparent electrode provided on the surface of the organic film and constituting one of a pixel electrode and a common electrode;
The liquid crystal display device according to claim 1, wherein the conductive layer is formed of the same layer as the first transparent electrode. A second insulating film provided on the surface of the first transparent electrode;
A second transparent electrode provided on the surface of the second insulating film and constituting the other of the pixel electrode or the common electrode;
The first insulating film provided on the surface of the conductive layer is formed of the same layer as the second insulating film provided between the first transparent electrode and the second transparent electrode. 7. A liquid crystal display device according to 6. The substrate is formed in a substantially rectangular shape in plan view,
The liquid crystal display device according to claim 1, wherein the conductive layer is provided so as to extend along at least one side of at least three sides on which the integrated circuit of the substrate is not provided. .   An electronic apparatus comprising the liquid crystal display device according to claim 1.

Images