JP2011149039A - Cu-Ga-BASED SPUTTERING TARGET MATERIAL HAVING HIGH STRENGTH, AND METHOD FOR MANUFACTURING THE SAME - Google Patents
Cu-Ga-BASED SPUTTERING TARGET MATERIAL HAVING HIGH STRENGTH, AND METHOD FOR MANUFACTURING THE SAME Download PDFInfo
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本発明は、太陽電池の光吸収薄膜層を製造するための高強度Ｃｕ−Ｇａ系スパッタリングターゲット材およびその製造方法に関する。 The present invention relates to a high-strength Cu—Ga based sputtering target material for producing a light-absorbing thin film layer of a solar cell and a method for producing the same.
従来より、太陽電池の光吸収層を製造するためのスパッタリングターゲット材として、Ｃｕ−Ｇａ系ターゲット材が用いられている。このＣｕ−Ｇａ系ターゲット材は、例えば特開２０００−７３１６３号公報（特許文献１）に開示されているように、鋳造法により製造されることが多いが、一方で、特開２００８−１３８２３２号公報（特許文献２）に開示されているように、粉末冶金法によっても製造されている。 Conventionally, a Cu—Ga based target material has been used as a sputtering target material for producing a light absorption layer of a solar cell. This Cu—Ga based target material is often manufactured by a casting method as disclosed in, for example, Japanese Patent Application Laid-Open No. 2000-73163 (Patent Document 1), but on the other hand, Japanese Patent Application Laid-Open No. 2008-138232. As disclosed in the publication (Patent Document 2), it is also manufactured by powder metallurgy.
Ｃｕ−Ｇａ系合金は、例えば、特許文献２の段落［０００３］に記載されている通り、Ｇａ濃度が高くなるに伴い、硬くかつ脆くなるため、ターゲット材への機械加工時に欠けや割れが発生しやすくなる問題がある。この問題に対し特許文献２では粉末工法によりターゲット材を作製すると共に、原料粉末を低Ｇａ粉末と高Ｇａ粉末の混合粉末とすることによって、脆さを改善している技術である。 As described in paragraph [0003] of Patent Document 2, for example, Cu—Ga-based alloys become harder and more brittle as the Ga concentration increases, so that chipping and cracking occur during machining of the target material. There is a problem that makes it easier to do. With respect to this problem, Patent Document 2 is a technique in which the brittleness is improved by preparing a target material by a powder method and making the raw material powder a mixed powder of a low Ga powder and a high Ga powder.
しかしながら、Ｃｕ−Ｇａ系合金は２元状態図からわかるとおり、Ｇａ含有量が増加するに伴い、固相線（溶融開始温度）が急激に低下するため、固化成形時の溶融を避けるために、固化成形温度を極端に低く設定せざるを得なくなる。例えば、特許文献２における実施例は全て２００℃で固化成形されている。特許文献２では実施例により作製されたターゲット材の密度についての記載はないが、２００℃程度の低温でＣｕ系合金粉末を真密度近くまで上げることは極めて困難である。 However, as can be seen from the binary phase diagram, Cu—Ga-based alloys have a rapid decrease in the solidus (melting start temperature) as the Ga content increases. In order to avoid melting during solidification, The solidification molding temperature must be set extremely low. For example, all the examples in Patent Document 2 are solidified at 200 ° C. In Patent Document 2, there is no description about the density of the target material produced by the example, but it is extremely difficult to raise the Cu-based alloy powder to near the true density at a low temperature of about 200 ° C.
また、特許文献２の実施例では６００ＭＰａという大きな圧力でホットプレス成形しているが、近年の太陽電池パネルの大型化に伴い、Ｃｕ−Ｇａ系ターゲット材も大型化する傾向にあり、例えば４００ｍｍ四方のターゲット材を６００ＭＰａで成形するためには、総圧１０００００ｋＮ近い圧力が必要となるため、工業的に困難であり、成形圧力の観点からも相対密度９５％以上の高密度化は不可能となってくる。
上述のような問題に加えて、一般に、ターゲット材を用いてスパッタ工法により薄膜を作製する場合、ターゲット材の相対密度が低いと異常放電やスプラッツが多く発生し、薄膜の不良率が増えることが知られており、９５％以上のターゲット材を用いることはスパッタ工法により作製される薄膜の不良率を減らすため極めて工業的に価値が高い。このように、ターゲット材としての形状への機械加工の時に、欠けや割れの発生を抑制できるよう脆さを改善され、かつ、９５％以上の相対密度を有するＣｕ−Ｇａ系ターゲット材の製造は極めて困難であった。 In addition to the above-described problems, generally, when a thin film is produced by sputtering using a target material, if the relative density of the target material is low, abnormal discharge and splats often occur and the thin film defect rate increases. It is known that using a target material of 95% or more is extremely industrially valuable because it reduces the defect rate of thin films produced by sputtering. Thus, when machining into a shape as a target material, the manufacture of a Cu—Ga based target material having improved brittleness and having a relative density of 95% or more is able to suppress the occurrence of chips and cracks. It was extremely difficult.
上述のような問題を解消するために発明者らは鋭意開発を進めた結果、低Ｇａ粉末が延性の高いＣｕベースｆｃｃ相を生成し、かつ高Ｇａ粉末のＧａ上限を設定することで、高温成形時の溶融を抑制することで高密度化を達成できる、太陽電池の光吸収薄膜層を製造するための高強度Ｃｕ−Ｇａ系スパッタリングターゲット材およびその製造方法を提供するものである。 As a result of diligent development to solve the problems as described above, the inventors have developed a Cu base fcc phase with high ductility and low Ga powder, and set the Ga upper limit of the high Ga powder. The present invention provides a high-strength Cu—Ga based sputtering target material for producing a light-absorbing thin film layer of a solar cell, which can achieve high density by suppressing melting during molding, and a method for producing the same.
その発明の要旨とするところは、
（１）原子％で、Ｇａを２９〜４０％含み、残部Ｃｕおよび不可避的不純物からなるＣｕ−Ｇａ系スパッタリングターゲット材において、Ｃｕベースｆｃｃ固溶体相とＣｕ９Ｇａ４金属間化合物相からなる二相もしくは、さらに前記二相に加えＣｕＧａ２金属間化合物相の三相からなることを特徴とした高強度Ｃｕ−Ｇａ系スパッタリングターゲット材。
The gist of the invention is that
(1) In a Cu—Ga based sputtering target material containing 29-40% Ga in atomic percent and the balance Cu and inevitable impurities, a two-phase consisting of a Cu-based fcc solid solution phase and a Cu9Ga4 intermetallic compound phase, or A high-strength Cu-Ga-based sputtering target material comprising a three-phase CuGa2 intermetallic phase in addition to the two phases.
（２）原子％で、Ｇａを２９〜４０％含み、残部Ｃｕおよび不可避的不純物からなるＣｕ−Ｇａ系スパッタリングターゲット材において、Ｘ線回折によるＣｕベースの相のうちｆｃｃ相の（１１１）面からの回折線のピーク値であるＣｕ［Ｉ（１１１）］とＣｕ９Ｇａ４相の（３３０）面からの回折線のピーク値であるＣｕ９Ｇａ４［Ｉ（３３０）］とのピーク比が、０．０５≦Ｃｕ［Ｉ（１１１）］／Ｃｕ９Ｇａ４［Ｉ（３３０）］≦０．８０、かつＣｕＧａ２相の（１０２）面からの回折線のピーク値であるＣｕＧａ２［Ｉ（１０２）］とＣｕ９Ｇａ４相の（３３０）面からの回折線のピーク値であるＣｕ９Ｇａ４［Ｉ（３３０）］とのピーク比が、ＣｕＧａ２［Ｉ（１０２）］／Ｃｕ９Ｇａ４［Ｉ（３３０）］≦０．１０であり、さらに相対密度が９５％以上であることを特徴とした高強度Ｃｕ−Ｇａ系スパッタリングターゲット材。 (2) In a Cu—Ga based sputtering target material containing 29 to 40% Ga and containing the balance Cu and unavoidable impurities in atomic%, from the (111) plane of the fcc phase among Cu based phases by X-ray diffraction The peak ratio of Cu [I (111)], which is the peak value of the diffraction line, and Cu9Ga4 [I (330)], which is the peak value of the diffraction line from the (330) plane of the Cu9Ga4 phase, is 0.05 ≦ Cu [I (111)] / Cu9Ga4 [I (330)] ≦ 0.80 and CuGa2 [I (102)] which is the peak value of the diffraction line from the (102) plane of the CuGa2 phase and (330) of the Cu9Ga4 phase The peak ratio of Cu9Ga4 [I (330)], which is the peak value of the diffraction line from the surface, is CuGa2 [I (102)] / Cu9Ga4 [I (330)] ≦ 0.10, and High strength Cu-Ga-based sputtering target material relative density was characterized by 95% or more.
（３）原子％で、Ｇａを２９〜４０％含み、残部Ｃｕおよび不可避的不純物からなるＣｕ−Ｇａ系スパッタリングターゲット材において、Ｃｕベースｆｃｃ固溶体相と、Ｃｕ９Ｇａ４金属間化合物相からなる二相もしくは、さらに前記二相に加えＣｕＧａ２金属間化合物相の三相からなり、Ｘ線回折によるＣｕベースの相のうちｆｃｃ相の（１１１）面からの回折線のピーク値であるＣｕ［Ｉ（１１１）］とＣｕ９Ｇａ４相の（３３０）面からの回折線のピーク値であるＣｕ９Ｇａ４［Ｉ（３３０）］とのピーク比が、０．０５≦Ｃｕ［Ｉ（１１１）］／Ｃｕ９Ｇａ４［Ｉ（３３０）］≦０．８０、かつＣｕＧａ２相の（１０２）面からの回折線のピーク値であるＣｕＧａ２［Ｉ（１０２）］とＣｕ９Ｇａ４相の（３３０）面からの回折線のピーク値であるＣｕ９Ｇａ４［Ｉ（３３０）］とのピーク比が、ＣｕＧａ２［Ｉ（１０２）］／Ｃｕ９Ｇａ４［Ｉ（３３０）］≦０．１０であり、さらに相対密度が９５％以上であることを特徴とした高強度Ｃｕ−Ｇａ系スパッタリングターゲット材。 (3) In a Cu-Ga-based sputtering target material containing 29 to 40% Ga in atomic percent and the balance Cu and inevitable impurities, a two-phase consisting of a Cu-based fcc solid solution phase and a Cu9Ga4 intermetallic compound phase, or Further, Cu [I (111)], which is a peak value of diffraction lines from the (111) plane of the fcc phase among the Cu-based phases by X-ray diffraction, consists of three phases of the CuGa2 intermetallic compound phase in addition to the two phases. The peak ratio of Cu9Ga4 [I (330)], which is the peak value of the diffraction line from the (330) plane of the Cu9Ga4 phase, is 0.05 ≦ Cu [I (111)] / Cu9Ga4 [I (330)] ≦ The diffraction line from the (330) plane of CuGa2 [I (102)] and the Cu9Ga4 phase is 0.80 and the peak value of the diffraction line from the (102) plane of the CuGa2 phase. The peak ratio with Cu9Ga4 [I (330)], which is a peak value, is CuGa2 [I (102)] / Cu9Ga4 [I (330)] ≦ 0.10, and the relative density is 95% or more. A high-strength Cu—Ga based sputtering target material characterized by
（４）Ｇａを２１％以下（０を含む）含み、残部Ｃｕおよび不可避的不純物からなる粉末と、Ｇａを３０〜４５％含み、残部Ｃｕおよび不可避的不純物からなる粉末を混合した粉末を原料とし、この原料粉末を３００℃以上、８５０℃以下の温間で固化成形することを特徴とした前記（１）〜（３）のいずれか１に記載のＣｕ−Ｇａ系スパッタリングターゲット材の製造方法にある。 (4) As a raw material, a powder containing 21% or less (including 0) of Ga and containing a balance Cu and inevitable impurities and a powder containing Ga 30 to 45% and the balance Cu and inevitable impurities is mixed. The method for producing a Cu—Ga based sputtering target material according to any one of the above (1) to (3), wherein the raw material powder is solidified and molded at a temperature of 300 ° C. or higher and 850 ° C. or lower. is there.
以上述べたように、合金の構成相を所定の条件に制御することにより脆さを改善し、かつ原料粉末とするＣｕ−Ｇａ系粉末の組成を所定の条件にすることで高温で固化成形でき、９５％以上の高密度ターゲット材の製造を可能とした、太陽電池の光吸収薄膜層を製造するための高強度Ｃｕ−Ｇａ系スパッタリングターゲット材およびその製造方法を提供するものである。 As described above, brittleness is improved by controlling the constituent phases of the alloy to predetermined conditions, and solidification molding can be performed at a high temperature by setting the composition of the Cu-Ga-based powder as the raw material powder to predetermined conditions. The present invention provides a high-strength Cu—Ga-based sputtering target material for producing a light-absorbing thin film layer of a solar cell, which can produce a high-density target material of 95% or more, and a method for producing the same.
以下、本発明について詳細に説明する。
Ｃｕ−Ｇａ系２元状態図から、ＣｕにＧａを添加していくと、少量添加であればｆ．ｃ．ｃ．構造のＣｕ固溶体となるが、更に添加量を増やしていくと、様々な金属間化合物を生成することがわかる。そこで発明者らはＣｕ−Ｇａ系合金の脆さに関して詳細に研究した結果、合金の構成相を所定の条件に制御することにより脆さを改善できることを見出した。更に、原料粉末とするＣｕ−Ｇａ系粉末の組成を所定の条件にすることにより、比較的高温で固化成形でき、９５％以上の高密度ターゲット材が作製できることを見出したものである。
Hereinafter, the present invention will be described in detail.
From the Cu-Ga based binary phase diagram, when Ga is added to Cu, if a small amount is added, f. c. c. Although it becomes a Cu solid solution of a structure, it turns out that various intermetallic compounds are produced | generated when the addition amount is increased further. Therefore, the inventors have conducted detailed studies on the brittleness of Cu—Ga based alloys, and as a result, found that the brittleness can be improved by controlling the constituent phases of the alloy to predetermined conditions. Furthermore, it has been found that by setting the composition of the Cu—Ga-based powder as the raw material powder to a predetermined condition, it can be solidified and molded at a relatively high temperature, and a high-density target material of 95% or more can be produced.
本発明において、Ｃｕベースのｆｃｃ相の（１１１）とＣｕ９Ｇａ４相の（３３０）面からのＸ線回折ピーク強度比が、０．０５≦Ｃｕ［Ｉ（１１１）］／Ｃｕ９Ｇａ４［Ｉ（３３０）］≦０．８０とした理由は、Ｇａを２９〜４０％含むＣｕ−Ｇａ系２元合金は、平衡状態においてＣｕ９Ｇａ４相が主相になり、Ｃｕベースｆｃｃ相はほぼ生成しない。しかしながら、このＣｕ９Ｇａ４相は極めて脆いことがわかった。ここで、Ｃｕベースのｆｃｃ相の（１１１）面からのＸ線回折ピークをＣｕ［Ｉ（１１１）］と示し、Ｃｕ９Ｇａ４相の（３３０）面からのＸ線回折ピークをＣｕ９Ｇａ４［Ｉ（３３０）］と示している。 In the present invention, the X-ray diffraction peak intensity ratio from the (111) of the Cu-based fcc phase to the (330) plane of the Cu9Ga4 phase is 0.05 ≦ Cu [I (111)] / Cu9Ga4 [I (330)]. The reason for ≦ 0.80 is that in the Cu—Ga binary alloy containing 29 to 40% of Ga, the Cu 9 Ga 4 phase becomes the main phase in the equilibrium state, and the Cu base fcc phase is hardly generated. However, this Cu9Ga4 phase was found to be extremely brittle. Here, the X-ray diffraction peak from the (111) plane of the Cu-based fcc phase is denoted as Cu [I (111)], and the X-ray diffraction peak from the (330) plane of the Cu9Ga4 phase is Cu9Ga4 [I (330). ].
一方、Ｇａが２９％より少ない組成においてはＣｕベースのｆｃｃ相も存在し、このｆｃｃ相は比較的延性があることがわかった。そこで、それぞれのメインピーク比を０．０５≦Ｃｕ［Ｉ（１１１）］／Ｃｕ９Ｇａ４［Ｉ（３３０）］≦０．８０の範囲にすることにより、欠けなどが発生しにくく取り扱いの容易なターゲット材となることを見出した。このピーク比が０．０５未満では十分な延性が得られず、０．８０を超えるとターゲットトータルのＧａ量を多くすることができない。なお、Ｃｕベースｆｃｃ相のメインピークは（１１１）面から、Ｃｕ９Ｇａ４相のメインピークは（３３０）面からのＸ線回折ピークである。 On the other hand, a Cu-based fcc phase is also present in a composition with less than 29% Ga, and this fcc phase was found to be relatively ductile. Therefore, by setting the respective main peak ratios in the range of 0.05 ≦ Cu [I (111)] / Cu9Ga4 [I (330)] ≦ 0.80, target materials that are less prone to chipping and are easy to handle. I found out that If this peak ratio is less than 0.05, sufficient ductility cannot be obtained, and if it exceeds 0.80, the total amount of Ga cannot be increased. The main peak of the Cu base fcc phase is an X-ray diffraction peak from the (111) plane, and the main peak of the Cu9Ga4 phase is an X-ray diffraction peak from the (330) plane.
また、ＣｕＧａ２相の（１０２）とＣｕ９Ｇａ４相の（３３０）面からのＸ線回折ピーク強度比が、ＣｕＧａ２［Ｉ（１０２）］／Ｃｕ９Ｇａ４［Ｉ（３３０）］≦０．１０とした理由は、ＣｕＧａ２は比較的Ｇａ量の多い合金において生成するが、この相が多く生成すると溶融温度が低いため、固化成形後に凝固巣ができるなど、高密度化が困難となる。すなわち、メインピーク比ＣｕＧａ２［Ｉ（１０２）］／Ｃｕ９Ｇａ４［Ｉ（３３０）］が０．１０を超えると高密度化が困難となる。なお、ＣｕＧａ２相のメインピークは（１０２）面からのＸ線回折ピークである。ここで、ＣｕＧａ２相の（１０２）面からのＸ線回折ピークをＣｕＧａ２［Ｉ（１０２）］と示す。 The reason why the X-ray diffraction peak intensity ratio from the (330) plane of the CuGa2 phase (102) and the Cu9Ga4 phase is CuGa2 [I (102)] / Cu9Ga4 [I (330)] ≦ 0.10 is as follows. CuGa2 is produced in an alloy having a relatively large amount of Ga. However, if this phase is produced in a large amount, the melting temperature is low, so that it becomes difficult to increase the density, for example, a solidification cavity is formed after solidification molding. That is, when the main peak ratio CuGa2 [I (102)] / Cu9Ga4 [I (330)] exceeds 0.10, it is difficult to increase the density. The main peak of the CuGa2 phase is an X-ray diffraction peak from the (102) plane. Here, the X-ray diffraction peak from the (102) plane of the CuGa2 phase is denoted as CuGa2 [I (102)].
また、Ｇａを２１％以下（０を含む）含み、残部Ｃｕおよび不可避的不純物からなる粉末Ａと、Ｇａを３０〜４５％含み、残部Ｃｕおよび不可避的不純物からなる粉末Ｂを混合した粉末とした理由は、原料粉末として単一組成の粉末ではなく、２種類の組成の粉末による混合粉末を用い、かつＧａを２１％以下含む粉末を用いると、固化成形後に比較的延性の高いＣｕベースｆｃｃ相を多く存在させることができるため好ましい。Ｇａが１５％を超える場合、ターゲットトータルのＧａ量を多く設定できるためより好ましい。また、もう一方の粉末として、Ｇａが３０〜４５％を含む粉末を用いることが好ましい。これは、Ｇａが３０％未満では、ターゲットトータルのＧａ量を多くすることができない。４５％を超えると低融点のＣｕＧａ２相が多くなり、高密度ターゲット材が得られない。 Moreover, it was set as the powder which mixed 21% or less (including 0) of Ga, powder A which consists of remainder Cu and an unavoidable impurity, and powder B which contains Ga 30 to 45%, and consists of the remainder Cu and an unavoidable impurity. The reason is that when a mixed powder of two types of powders is used as the raw material powder, and a powder containing 21% or less of Ga is used, a Cu-based fcc phase having a relatively high ductility after solidification molding is used. Can be present in a large amount. When Ga exceeds 15%, it is more preferable because the target total Ga amount can be set large. Moreover, it is preferable to use the powder in which Ga contains 30 to 45% as the other powder. This is because if the Ga content is less than 30%, the target total Ga content cannot be increased. If it exceeds 45%, the CuGa2 phase having a low melting point increases and a high-density target material cannot be obtained.
さらに、３００℃以上、８５０℃以下の温間で固化成形した理由は、３００℃未満での固化成形では９５％以上の高密度が得られず、８５０℃を超える高温では溶融による凝固巣の発生で低密度となる。 Furthermore, the reason for solidification molding at a temperature of 300 ° C. or more and 850 ° C. or less is that solidification molding at a temperature of less than 300 ° C. does not provide a high density of 95% or more. With low density.
以下、本発明について実施例によって具体的に説明する。
粉末Ａとして表１に示すＮｏ．ａ〜Ｎｏ．ｇの組成の各粉末を、粉末ＢとしてＮｏ．ｈ〜Ｎｏ．ｌの組成の各粉末を作製した。粉末の作製方法はガスアトマイズ法で、まず各組成となるように原料を合計で２０ｋｇ計量し、これをアルミナ坩堝にて溶解し、径８ｍｍのノズルからこの溶湯を出湯し、アルゴンガスにて噴霧した。得られた粉末Ａおよび粉末Ｂを表２に示すターゲットトータル組成となるよう計量し、これをＶ型混合機にて１時間混合した。この粉末を表２に示す温度でホットプレスもしくはＨＩＰ法にて固化成形した。ホットプレスは径１５０ｍｍのカーボン型で２０ＭＰａの圧力で２時間成形した。ＨＩＰについては径２００ｍｍの炭素鋼外筒管に粉末を充填し、脱気封入後、１１８ＭＰａで２時間成形した。
Hereinafter, the present invention will be specifically described with reference to examples.
No. shown in Table 1 as Powder A a-No. Each powder having the composition of g was designated as powder B No. h-No. Each powder having a composition of l was prepared. The powder was prepared by gas atomization. First, a total of 20 kg of raw materials were weighed so as to obtain each composition, this was melted in an alumina crucible, this molten metal was discharged from an 8 mm diameter nozzle, and sprayed with argon gas. . The obtained powder A and powder B were weighed so as to have the target total composition shown in Table 2, and mixed with a V-type mixer for 1 hour. This powder was solidified and molded at a temperature shown in Table 2 by hot pressing or HIP method. The hot press was a carbon mold having a diameter of 150 mm and molded at a pressure of 20 MPa for 2 hours. Regarding HIP, a carbon steel outer tube having a diameter of 200 mm was filled with powder, sealed with deaeration, and then molded at 118 MPa for 2 hours.
それぞれの成形体から、２ｍｍ角で長さ２０ｍｍの試験片を採取し、３点曲げ試験により抗折強度を測定し、２００ＭＰａ以上を○、２００ＭＰａ未満を×とした。また、成形体から切り出した小片を鏡面研磨し、光学顕微鏡像で観察することによりポアの面積を算出してポアの面積率を求め、この面積率を１００％から差し引いて成形体の相対密度とした。相対密度が９５％以上の成形体を○、９５％未満の成形体を×とした。また、同様の鏡面に研磨した試験片をＸ線回折し、Ｃｕ［Ｉ（１１１）］／Ｃｕ９Ｇａ４［Ｉ（３３０）］のピーク比Ａ、ＣｕＧａ２［Ｉ（１０２）］／Ｃｕ９Ｇａ４［Ｉ（３３０）］のピーク比Ｂを算出した。その粉末Ａに用いる各粉末および粉末Ｂに用いる各粉末の組成を表１に示す。そしてこれら粉末の混合し成形した結果およびこの成形体の試験結果を表２に示す。 A test piece of 2 mm square and a length of 20 mm was collected from each molded body, and the bending strength was measured by a three-point bending test. In addition, a small piece cut out from the molded body is mirror-polished, the area of the pore is calculated by observing with an optical microscope image, the area ratio of the pore is obtained, and this area ratio is subtracted from 100% to obtain the relative density of the molded body. did. A molded body having a relative density of 95% or more was evaluated as “◯”, and a molded body having a relative density of less than 95% was evaluated as “X”. Moreover, the test piece grind | polished to the same mirror surface was X-ray-diffracted, and the peak ratio A of Cu [I (111)] / Cu9Ga4 [I (330)], CuGa2 [I (102)] / Cu9Ga4 [I (330) The peak ratio B was calculated. The composition of each powder used for the powder A and each powder used for the powder B is shown in Table 1. Table 2 shows the results of mixing and molding these powders and the test results of this molded body.
表２に示すように、比較例Ｎｏ．１３は粉末Ａが比較例であるｇであり、また、ピーク比Ａが０．０２と小さいために、抗折強度が低い。比較例Ｎｏ．１４、１５は単一組成粉末のみで製造したもので、ピーク比Ａが０．０５未満であり脆く、抗折強度が低い。比較例Ｎｏ．１６は粉末Ｂが比較例であるｌであり、また、ピーク比Ｂが大きいために、相対密度が低い。 As shown in Table 2, Comparative Example No. 13 is g in which the powder A is a comparative example, and since the peak ratio A is as small as 0.02, the bending strength is low. Comparative Example No. Nos. 14 and 15 were produced using only a single composition powder, and the peak ratio A was less than 0.05, it was brittle, and the bending strength was low. Comparative Example No. No. 16 is 1 in which powder B is a comparative example, and since the peak ratio B is large, the relative density is low.
比較例Ｎｏ．１７はターゲットトータルのＧａが２９％未満であり、ピーク比Ａが０．８５と大きく、成形温度が低いため、相対密度が低い。比較例Ｎｏ．１８は成形温度が高く、かつピーク比Ａが０．０１と小さいために、抗折強度、相対密度が低い。これに対し、本発明例であるＮｏ．１〜１２はいずれも本発明の条件を満たしていることから、抗折強度および相対密度の優れていることが分かる。 Comparative Example No. In No. 17, the total target Ga is less than 29%, the peak ratio A is as large as 0.85, and the molding temperature is low, so the relative density is low. Comparative Example No. No. 18 has a high molding temperature and a small peak ratio A of 0.01, so that the bending strength and the relative density are low. On the other hand, No. which is an example of the invention. Since 1 to 12 all satisfy the conditions of the present invention, it is understood that the bending strength and the relative density are excellent.
以上のように、本発明による、低Ｇａ粉末が延性の高いＣｕベースｆｃｃ相を生成し、かつ高Ｇａ粉末のＧａ上限を設定することで、温間成形時の溶融を抑制することで高密度化を達成できる、太陽電池の光吸収薄膜層を製造するための高強度Ｃｕ−Ｇａ系スパッタリングターゲット材およびその製造方法を可能とした極めて優れた効果を奏するものである。
特許出願人 山陽特殊製鋼株式会社
代理人 弁理士 椎 名 彊
As described above, according to the present invention, the low Ga powder generates a highly ductile Cu-based fcc phase, and the Ga upper limit of the high Ga powder is set, thereby suppressing the melting during warm forming, thereby increasing the density. Therefore, it is possible to achieve a high-strength Cu—Ga based sputtering target material for producing a light-absorbing thin film layer of a solar cell and a method for producing the same.
Patent applicant Sanyo Special Steel Co., Ltd.
Attorney: Attorney Shiina
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