JP2011138806A - Method of manufacturing semiconductor substrate and apparatus for manufacturing semiconductor substrate - Google Patents
Method of manufacturing semiconductor substrate and apparatus for manufacturing semiconductor substrate Download PDFInfo
- Publication number
- JP2011138806A JP2011138806A JP2009295898A JP2009295898A JP2011138806A JP 2011138806 A JP2011138806 A JP 2011138806A JP 2009295898 A JP2009295898 A JP 2009295898A JP 2009295898 A JP2009295898 A JP 2009295898A JP 2011138806 A JP2011138806 A JP 2011138806A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- semiconductor
- energy density
- semiconductor substrate
- irradiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 112
- 239000000758 substrate Substances 0.000 title claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000012535 impurity Substances 0.000 claims abstract description 38
- 230000004913 activation Effects 0.000 claims abstract description 13
- 238000003384 imaging method Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 12
- 230000003746 surface roughness Effects 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000007493 shaping process Methods 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 4
- 238000005224 laser annealing Methods 0.000 abstract description 16
- 230000003213 activating effect Effects 0.000 abstract description 3
- 238000002844 melting Methods 0.000 description 10
- 230000008018 melting Effects 0.000 description 10
- 230000001788 irregular Effects 0.000 description 8
- 239000000523 sample Substances 0.000 description 8
- 238000009826 distribution Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 4
- 238000001953 recrystallisation Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
この発明は、裏面照射型の固体撮像素子などの半導体基板の製造に際し、イオン注入などによって半導体に注入された不純物を活性化させる半導体基板の製造方法および半導体基板製造装置に関するものである。 The present invention relates to a semiconductor substrate manufacturing method and a semiconductor substrate manufacturing apparatus for activating impurities implanted into a semiconductor by ion implantation or the like when manufacturing a semiconductor substrate such as a back-illuminated solid-state imaging device.
裏面照射型の固体撮像素子などの半導体基板では、ｐ型やｎ型の不純物をイオン注入などによって半導体に注入した後、レーザを照射して前記不純物の活性化を行っている（例えば特許文献１参照）。この方法によれば、比較的低温、かつ比較的少ない熱量で不純物の活性化を行うことができ、半導体基板に対する熱影響を小さくしたままで不純物を効果的に活性化できるという利点を有している。 In a semiconductor substrate such as a back-illuminated solid-state imaging device, p-type and n-type impurities are implanted into the semiconductor by ion implantation or the like, and then the laser is irradiated to activate the impurities (for example, Patent Document 1). reference). According to this method, the impurity can be activated at a relatively low temperature and with a relatively small amount of heat, and the impurity can be effectively activated while keeping the thermal influence on the semiconductor substrate small. Yes.
しかし、上記背景技術に掲載された方法によってレーザアニールする際に、充分に活性化するためのエネルギー密度でレーザを照射するとレーザを走査する間隔（送りピッチ）で半導体の表面が大きく荒れるという問題がある。一方、エネルギー密度を下げると当然に十分な活性化がなされない。
上記表面の荒れは、特に、可視光の波長に近い間隔で規則的に現れると、その規則性によって特定の波長で干渉が発生するため、撮像素子へ入射する光強度分布が不均一になるというおそれがある。また、表面荒れが不規則であっても、表面荒れの存在する場所と存在しない場所では、わずかに光の反射率が異なるため、撮像素子に入射する光強度分布にムラができるおそれもある。
However, when laser annealing is performed by the method described in the background art, there is a problem that if the laser is irradiated with an energy density sufficient for activation, the surface of the semiconductor is greatly roughened at the scanning interval (feed pitch). is there. On the other hand, when the energy density is lowered, naturally, sufficient activation is not performed.
In particular, when the surface roughness appears regularly at intervals close to the wavelength of visible light, interference occurs at a specific wavelength due to the regularity, and therefore the light intensity distribution incident on the image sensor becomes non-uniform. There is a fear. Even if the surface roughness is irregular, the light reflectance is slightly different between the place where the surface roughness exists and the place where the surface roughness does not exist, so that the light intensity distribution incident on the image sensor may be uneven.
本発明は、上記事情を背景としてなされたものであり、不純物の活性化が十分になされるとともに照射後の照射面全面を一様な状態にすることができる半導体基板の製造方法および半導体基板製造装置を提供することを目的としている。 The present invention has been made against the background of the above circumstances, and a semiconductor substrate manufacturing method and a semiconductor substrate manufacturing method that can sufficiently activate impurities and make the entire irradiated surface uniform after irradiation. The object is to provide a device.
すなわち、本発明の半導体基板の製造方法のうち、第１の本発明は、半導体にレーザを照射して半導体に注入された不純物を活性化する半導体基板の製造方法において、前記不純物が活性化される第１のエネルギー密度によって前記半導体に第１のレーザを照射した後、前記第１のエネルギー密度よりも低い第２のエネルギー密度によって前記半導体の前記第１のレーザ照射面上に第２のレーザを照射することを特徴とする。 That is, of the semiconductor substrate manufacturing methods of the present invention, the first invention is a semiconductor substrate manufacturing method in which a semiconductor is irradiated with a laser to activate the impurities implanted into the semiconductor. Irradiating the semiconductor with a first laser at a first energy density, and then applying a second laser onto the first laser irradiation surface of the semiconductor with a second energy density lower than the first energy density. It is characterized by irradiating.
第２の本発明は、前記第１の本発明において、前記第１のレーザ照射によって前記不純物の活性化を行うとともに、該第１のレーザ照射によって形成された部分的な表面の荒れを、前記第２のレーザ照射によって緩和することを特徴とする。 According to a second aspect of the present invention, in the first aspect of the present invention, the impurity is activated by the first laser irradiation, and the partial surface roughness formed by the first laser irradiation It is characterized by relaxation by the second laser irradiation.
第３の本発明は、前記第１または第２の本発明において、前記第１のエネルギー密度は、前記第１のレーザの照射によって前記活性化が十分になされるとともに前記半導体表面に部分的に大きな荒れが生ずるエネルギー密度であり、前記第２のエネルギー密度は、前記第２のレーザの単独照射によっては、前記不純物の活性化が不十分であるとともに前記半導体表面が略一様な表面粗さとなるエネルギー密度であることを特徴とする。 According to a third aspect of the present invention, in the first or second aspect of the present invention, the first energy density is sufficiently activated by irradiation with the first laser and partially on the semiconductor surface. The second energy density is such that the impurity is not sufficiently activated by the single irradiation of the second laser and the semiconductor surface has a substantially uniform surface roughness. It is the energy density which becomes.
第４の本発明は、前記第１〜第３の本発明のいずれかにおいて、前記第１のエネルギー密度は、第１のレーザ照射によって前記半導体が相対的に深く溶融し、前記第２のエネルギー密度は、前記第２のレーザ照射によって前記半導体が相対的に浅く溶融するものであることを特徴とする。 In a fourth aspect of the present invention based on any one of the first to third aspects of the present invention, the first energy density is such that the semiconductor is relatively deeply melted by the first laser irradiation, and the second energy The density is such that the semiconductor melts relatively shallowly by the second laser irradiation.
本発明によれば、第１のエネルギー密度を有する第１のレーザ照射によって、半導体の不純物が十分に活性化される。ただし、その際に、半導体表面に部分的で大きな荒れが生じる。この大きな荒れは、照射面全体の荒れに対し、通常は数倍の荒さを有している。この半導体表面に対し、第１のエネルギー密度よりも小さな第２のエネルギー密度で第２のレーザ照射を行うことで、前記の部分的な荒れが緩和され、照射面全体を一様で不規則かつ小さな荒れが生じている状態にすることができる。この小さな荒れは、撮像素子へ入射する光強度分布を不均一にすることはなく、良質の撮像素子を得ることができる。 According to the present invention, the semiconductor impurity is sufficiently activated by the first laser irradiation having the first energy density. However, at that time, the semiconductor surface is partially and greatly roughened. This large roughness usually has several times the roughness of the entire irradiated surface. By performing the second laser irradiation at a second energy density smaller than the first energy density on the semiconductor surface, the partial roughness is alleviated, and the entire irradiation surface is uniformly and irregularly formed. It can be in a state where a small roughness has occurred. This small roughness does not make the light intensity distribution incident on the image sensor nonuniform, and a high-quality image sensor can be obtained.
なお、半導体の不純物が充分に活性化されているか否かは、基板表面のシート抵抗を計測することで知ることができる。図２は、レーザの照射エネルギー密度とレーザ照射後のシート抵抗の関係を示すものである。図２に示すようにエネルギー密度が上昇するとシート抵抗が小さくなり、レーザの照射エネルギー密度が、あるエネルギー密度より大きくなる（この図では１．１Ｊ／ｃｍ２以上）と、シート抵抗はほぼ一定になる。ここで、このシート抵抗が一定になる領域を、「完全溶融域」と呼ぶ。
この完全溶融域での表面形状は、図３（ｃ）（ｄ）に示すように部分的に表面が不規則に荒れている。これはレーザ照射時に基板が完全溶融すると、ビーム端では再結晶化がビーム端より横方向に進むためであると考えられる。一方、ビーム中央では再結晶化が基板の深いところから表面へ（垂直方向へ）と進むので、表面がほとんど荒れない。完全溶融域より低いエネルギー密度では、図３（ｂ）に示すように、全体が不規則に荒れる領域があり、これを「部分溶融域」と呼ぶ。部分溶融域では溶融深さが相対的に浅いので再結晶化は横方向になり全体が荒れるものと考えられる。さらに低いエネルギー密度では、図３（ａ）に示すように、溶融しないので表面が荒れない。この領域を「固相成長域」と呼ぶ。
Note that whether or not semiconductor impurities are sufficiently activated can be determined by measuring the sheet resistance of the substrate surface. FIG. 2 shows the relationship between the irradiation energy density of the laser and the sheet resistance after the laser irradiation. As shown in FIG. 2, when the energy density increases, the sheet resistance decreases, and when the laser irradiation energy density becomes larger than a certain energy density (1.1 J / cm 2 or more in this figure), the sheet resistance becomes almost constant. Become. Here, the region where the sheet resistance is constant is referred to as a “complete melting region”.
As shown in FIGS. 3C and 3D, the surface shape in the complete melting region is partially irregular. This is thought to be because when the substrate is completely melted during laser irradiation, recrystallization proceeds in the lateral direction from the beam end at the beam end. On the other hand, since recrystallization proceeds from the deep part of the substrate to the surface (in the vertical direction) at the center of the beam, the surface is hardly roughened. At an energy density lower than the complete melting region, there is a region where the entire surface is irregularly roughened as shown in FIG. 3B, and this is called a “partial melting region”. Since the melting depth is relatively shallow in the partial melting region, recrystallization is considered to be lateral and the whole is rough. At a lower energy density, the surface is not roughened because it does not melt as shown in FIG. This region is called “solid phase growth region”.
半導体の不純物を充分に活性化するためには完全溶融域でレーザアニールする必要があり、このとき表面は部分的に不規則または規則的に荒れる。また基板全面で活性化が均一に行われ、製造工程において安定に活性化を行うためには完全溶融での活性化が望ましい。その後、部分溶融域でレーザアニールすることで、前記したように部分的な荒れが緩和される。上記固相成長域のエネルギー密度では、第１のレーザによって生じた部分的な大きな荒れを緩和することが難しく、したがって、第２のエネルギー密度は、部分溶融域が得られるものとするのが望ましい。 In order to fully activate semiconductor impurities, it is necessary to perform laser annealing in a completely molten region, and at this time, the surface is partially irregular or regularly rough. In order to perform the activation uniformly over the entire surface of the substrate and to perform the activation stably in the manufacturing process, it is desirable to activate by complete melting. After that, by performing laser annealing in the partial melting region, the partial roughness is alleviated as described above. With the energy density of the solid phase growth region, it is difficult to alleviate the partial large roughness caused by the first laser. Therefore, it is desirable that the second energy density provides a partial melting region. .
すなわち、第５の本発明は、前記第１〜第４の本発明において、前記第１のエネルギー密度は、第１のレーザ照射による前記半導体のシート抵抗がエネルギー密度の変化に対し略一定になる領域にあり、前記第２のエネルギー密度は、第２のレーザ照射による前記半導体のシート抵抗がエネルギー密度の増加に伴って減少する領域にあることを特徴とする。 That is, according to a fifth aspect of the present invention, in the first to fourth aspects of the present invention, the first energy density is substantially constant with respect to a change in energy density of the semiconductor sheet resistance caused by the first laser irradiation. In the region, the second energy density is in a region where the sheet resistance of the semiconductor due to the second laser irradiation decreases as the energy density increases.
第６の本発明は、前記第１〜第５の本発明において、前記第１のエネルギー密度は、前記第１のレーザ照射によって該レーザの走査間隔毎に、前記半導体表面に部分的な荒れが生じるものであることを特徴とする。 According to a sixth aspect of the present invention, in the first to fifth aspects of the invention, the first energy density is such that the semiconductor surface is partially roughened at each scanning interval of the laser by the first laser irradiation. It is generated.
前記したようにレーザビームのプロファイルでは、平坦域の両側にエネルギー密度が傾斜して減少する領域があり、この領域によって、レーザの走査間隔毎に規則的な荒れが生じる。この荒れは、第２のレーザ照射によって緩和されることになる。 As described above, in the profile of the laser beam, there are regions where the energy density is inclined and decreases on both sides of the flat region, and this region causes regular roughness at every laser scanning interval. This roughness is alleviated by the second laser irradiation.
第７の本発明によれば、前記第１〜第６の本発明において、前記第１のレーザ照射の走査方向と、前記第２のレーザ照射の走査方向とを逆にすることを特徴とする。 According to a seventh aspect of the present invention, in the first to sixth aspects of the present invention, the scanning direction of the first laser irradiation and the scanning direction of the second laser irradiation are reversed. .
走査方向を反転する際に、第１のレーザ照射と第２のレーザ照射とを切り替えることで、効率よく処理を行うことが可能になる。
レーザアニールはステージを動かして、ステージ上の基板全面を照射する方法が一般的である。また、ステージ上の基板の交換はロボットで行うため、１箇所で行うのが一般的である。すなわち基板をステージに設置後、ステージを一方向に定速で移動しレーザ光を照射した後、ステージを基板交換位置へ戻す必要がある。この戻す工程で、前記第２のエネルギー密度による第２のレーザ照射を行うことで、生産性を低下させることなく本発明の方法を実施することができる。
When the scanning direction is reversed, the processing can be efficiently performed by switching between the first laser irradiation and the second laser irradiation.
Laser annealing is generally performed by moving the stage and irradiating the entire surface of the substrate on the stage. In addition, since the substrate on the stage is replaced by a robot, it is generally performed at one place. That is, after the substrate is placed on the stage, it is necessary to move the stage in one direction at a constant speed and irradiate the laser beam, and then return the stage to the substrate exchange position. By performing the second laser irradiation with the second energy density in this returning step, the method of the present invention can be carried out without reducing the productivity.
また、本発明の半導体基板製造装置は、半導体に注入された不純物を活性化する第１のエネルギー密度で前記半導体に照射するべく第１のレーザを出力するレーザ光源と、前記第１のエネルギー密度よりも低い第２のエネルギー密度で前記半導体の前記第１のレーザ照射面上に照射するべく第２のレーザを出力するレーザ光源と、前記第１のレーザおよび第２のレーザを所定のビーム形状に整形して前記半導体に導く光学系と、前記半導体を設置して少なくとも一軸方向に移動させるステージとを備えることを特徴とする。 The semiconductor substrate manufacturing apparatus of the present invention includes a laser light source that outputs a first laser to irradiate the semiconductor with a first energy density that activates impurities implanted in the semiconductor, and the first energy density. A laser light source for outputting a second laser to irradiate the first laser irradiation surface of the semiconductor with a second energy density lower than the first laser, and a predetermined beam shape of the first laser and the second laser. And an optical system that guides the semiconductor to the semiconductor and a stage that installs the semiconductor and moves the semiconductor in at least one axial direction.
第１のレーザを出力するレーザ光源と、第２のレーザを出力するレーザ光源とは、異なるレーザ光源によって構成してもよいが、同一のレーザ光源で構成するのが望ましい。
同一のレーザ光源を用いることで装置コストを増大させることなく本発明方法を実現できる。エネルギー密度は、レーザの出力を調整するエネルギー調整手段により行うことができる。エネルギー調整手段は、レーザ光源の出力を調整するものであってもよく、また、レーザ光源から出力されたレーザの出力を調整するものであってもよい。該エネルギー調整手段としては、既知のものを用いることができる。
The laser light source that outputs the first laser and the laser light source that outputs the second laser may be configured by different laser light sources, but are preferably configured by the same laser light source.
By using the same laser light source, the method of the present invention can be realized without increasing the apparatus cost. The energy density can be determined by an energy adjusting unit that adjusts the output of the laser. The energy adjusting means may adjust the output of the laser light source, or may adjust the output of the laser output from the laser light source. As the energy adjusting means, known means can be used.
また、本発明の他の半導体基板製造装置は、レーザを出力するレーザ光源と、該レーザ光源から出力されたレーザの出力を調整するエネルギー調整手段と、該エネルギ調整手段で出力調整されたレーザを所定のビーム形状に整形して前記半導体に導く光学系と、前記半導体を設置して少なくとも一軸方向に移動させるステージと、前記エネルギー調整手段の出力調整および前記ステージの移動を制御する制御部を備え、該制御部は、前記ステージを第１の方向に移動させる際に前記エネルギー調整手段によって第１のエネルギー密度が得られるように前記レーザの出力を調整し、前記ステージを前記第１の方向と逆方向の第２の方向に移動させる際に、該移動に連動して、前記エネルギー調整手段によって前記第１のエネルギー密度よりも低い第２のエネルギー密度が得られるように前記レーザの出力を調整する制御を行うことを特徴とする。
上記装置によれば、ステージの往復動に連動させてエネルギー調整手段の出力調整を行うことで、効率よく本発明方法を実施することができる。
According to another aspect of the present invention, there is provided a semiconductor substrate manufacturing apparatus comprising: a laser light source that outputs a laser; an energy adjusting unit that adjusts an output of the laser output from the laser light source; and a laser that is output adjusted by the energy adjusting unit. An optical system that shapes the beam into a predetermined beam and guides it to the semiconductor, a stage that installs the semiconductor and moves it in at least one axial direction, and a controller that controls output adjustment of the energy adjusting means and movement of the stage The control unit adjusts the output of the laser so that a first energy density is obtained by the energy adjusting means when the stage is moved in the first direction, and the stage is moved to the first direction. When moving in the reverse second direction, the energy adjustment means lowers the first energy density in conjunction with the movement. And performing a control of the second energy density to adjust the output of the laser so as to obtain.
According to the above apparatus, the method of the present invention can be efficiently implemented by adjusting the output of the energy adjusting means in conjunction with the reciprocation of the stage.
以上、説明したように、本発明の半導体基板の製造方法によれば、半導体にレーザを照射して半導体に注入された不純物を活性化する半導体基板の製造方法において、前記不純物が活性化される第１のエネルギー密度によって前記半導体に第１のレーザを照射した後、前記第１のエネルギー密度よりも低い第２のエネルギー密度によって前記半導体の前記第１のレーザが照射された照射面上に第２のレーザを照射するので、第１のレーザ照射でレーザアニールすることによって充分な活性化を安定して行い、かつ、第２のレーザ照射でレーザアニールすることで、第１のレーザ照射で生じた不規則または規則的な表面荒れを一様な荒れにすることができる。 As described above, according to the semiconductor substrate manufacturing method of the present invention, the impurity is activated in the semiconductor substrate manufacturing method in which the semiconductor is irradiated with a laser to activate the impurity implanted into the semiconductor. After irradiating the semiconductor with the first laser at the first energy density, the first laser on the irradiation surface irradiated with the first laser at the second energy density lower than the first energy density. Since the second laser irradiation is performed, sufficient activation is stably performed by laser annealing with the first laser irradiation, and the first laser irradiation occurs by performing the laser annealing with the second laser irradiation. Irregularity or regular surface roughness can be made uniform.
さらにこの発明によれば、完全溶融領域でレーザアニールすることで十分に活性化を行っているので、不純物の活性化率を高くすることができ、なおかつレーザ照射面全体のシート抵抗および活性化率が均一な撮像素子を製造可能である。なおかつ、さらに部分溶融領域でレーザアニールを行うことにより、不規則な表面荒れを一様に全体に製作している。このため、不規則な荒れは可視光の波長領域の整数倍および整数分の一になるような規則的な構造を有していないので、撮像素子の表面に入射する可視光を干渉させることなく撮像素子に入射させることができる。さらに、この不規則な荒れが基板全体に一様に製作されているので、撮像素子に入射する光強度分布にムラがない撮像素子が製造可能である。 Furthermore, according to the present invention, since activation is sufficiently performed by laser annealing in a completely molten region, the activation rate of impurities can be increased, and the sheet resistance and activation rate of the entire laser irradiation surface can be increased. Can produce a uniform imaging device. In addition, irregular surface roughness is uniformly produced as a whole by performing laser annealing in the partially molten region. For this reason, the irregular roughness does not have a regular structure that is an integral multiple and a fraction of an integer of the wavelength range of visible light, so that visible light incident on the surface of the image sensor is not interfered with. It can enter into an image pick-up element. Furthermore, since this irregular roughness is uniformly produced over the entire substrate, an image sensor having no unevenness in the light intensity distribution incident on the image sensor can be manufactured.
また、本発明の半導体基板製造装置によれば、半導体に注入された不純物を活性化する第１のエネルギー密度で前記半導体に照射するべく第１のレーザを出力するレーザ光源と、前記第１のエネルギー密度よりも低い第２のエネルギー密度で前記半導体の前記第１のレーザ照射面上に照射するべく第２のレーザを出力するレーザ光源と、前記第１のレーザおよび第２のレーザを所定のビーム形状に整形して前記半導体に導く光学系と、前記半導体を設置して少なくとも一軸方向に移動させるステージとを備えるので、上記半導体基板の製造方法を効果的に実施することができる。 According to the semiconductor substrate manufacturing apparatus of the present invention, a laser light source that outputs a first laser to irradiate the semiconductor with a first energy density that activates impurities implanted in the semiconductor; A laser light source for outputting a second laser to irradiate the first laser irradiation surface of the semiconductor with a second energy density lower than the energy density; and a predetermined laser beam emitted from the first laser and the second laser. Since the optical system that shapes the beam and guides it to the semiconductor and the stage that installs the semiconductor and moves it in at least one axial direction are provided, the semiconductor substrate manufacturing method can be effectively carried out.
以下、この発明の一実施形態を添付図に基づいて説明する。
図１に本発明を実施する装置の構成を示す。
半導体基板製造装置に相当するレーザアニール装置１００は、エキシマレーザを出力するレーザ光源１０１を備えている。レーザ光源１０１の出力先には、レーザ１０２の出力を調整するアッテネータ１０３が備えられている。アッテネータ１０３は、例えばレーザの透過率を調整することでレーザの出力調整を行うことができ、本発明のエネルギー調整手段に相当する。また、アッテネータ１０３は、制御装置１１５に制御可能に接続されている。制御装置１１５は、レーザアニール装置１００全体を制御するものであり、ＣＰＵとこれを動作させるプログラム、該プログラムを格納するＲＯＭ、ワークエリアなどに用いられるＲＡＭ、装置の動作パラメータなどを格納した不揮発メモリなどによって構成されている。
Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings.
FIG. 1 shows the configuration of an apparatus for carrying out the present invention.
A laser annealing apparatus 100 corresponding to a semiconductor substrate manufacturing apparatus includes a laser light source 101 that outputs an excimer laser. At the output destination of the laser light source 101, an attenuator 103 for adjusting the output of the laser 102 is provided. The attenuator 103 can adjust the laser output by adjusting the laser transmittance, for example, and corresponds to the energy adjusting means of the present invention. Further, the attenuator 103 is connected to the control device 115 in a controllable manner. The control device 115 controls the entire laser annealing device 100, and includes a CPU, a program for operating the CPU, a ROM for storing the program, a RAM for use in a work area, a nonvolatile memory for storing operation parameters of the device, and the like. Etc.
アッテネータ１０３で出力調整されたレーザ１０２の透過先には、レーザ１０２をラインビーム状のレーザ１０５に整形する整形光学系１０４が設けられており、該整形光学系１０４の出射先に、試料台１０６が位置する。
試料台１０６は、ステージ１１０に設置されており、該ステージ１１０は、少なくとも水平方向一軸で往復移動が可能になっている。該ステージ１１０は、前記した制御装置１１５に制御可能に接続されている。
また、上記レーザアニール装置１００では、搬送ロボット１１１およびカセット１１２を備えており、カセット１１２には半導体基板１０７が収容されている。
A shaping optical system 104 for shaping the laser 102 into a line beam-like laser 105 is provided at the transmission destination of the laser 102 whose output is adjusted by the attenuator 103. A sample stage 106 is provided at the emission destination of the shaping optical system 104. Is located.
The sample stage 106 is installed on a stage 110, and the stage 110 can reciprocate at least in one horizontal direction. The stage 110 is connected to the control device 115 so as to be controllable.
The laser annealing apparatus 100 includes a transfer robot 111 and a cassette 112, and a semiconductor substrate 107 is accommodated in the cassette 112.
次に、上記レーザアニール装置１００の動作について説明する。
カセット１１２に収容され、不純物が注入された半導体基板１０７を搬送ロボット１１１によって取り出し、試料台１０６上に載置する。
レーザ光源１０１からは波長３０８ｎｍ、発振周波数３００Ｈｚのパルス状のレーザ１０２が発振される。該レーザ１０２は、アッテネータ１０３を透過して所望の出力に調整され、整形光学系１０４において長軸×短軸＝２００ｍｍ×０．２ｍｍのラインビーム状のレーザ１０５に整形される。該レーザ１０５は、図１（ｂ）に示すように、試料台１０６に設置した半導体基板１０７に照射される。
制御装置１１５は、不揮発メモリに格納された動作パラメータに基づいてアッテネータ１０３を制御し、所望のエネルギー密度で半導体基板１０７に照射されるようにレーザの出力が調整される。この際のエネルギー密度は、半導体基板１０７に注入された不純物が十分に活性化されるものに設定されており、本発明の第１のエネルギー密度に相当する。この際のレーザ照射は、本発明の第１のレーザ照射に相当する。
Next, the operation of the laser annealing apparatus 100 will be described.
The semiconductor substrate 107 housed in the cassette 112 and doped with impurities is taken out by the transfer robot 111 and placed on the sample stage 106.
The laser light source 101 oscillates a pulsed laser 102 having a wavelength of 308 nm and an oscillation frequency of 300 Hz. The laser 102 passes through the attenuator 103 and is adjusted to a desired output, and is shaped into a line beam laser 105 of long axis × short axis = 200 mm × 0.2 mm in the shaping optical system 104. As shown in FIG. 1B, the laser 105 irradiates a semiconductor substrate 107 placed on a sample stage 106.
The control device 115 controls the attenuator 103 based on the operation parameters stored in the nonvolatile memory, and adjusts the laser output so that the semiconductor substrate 107 is irradiated with a desired energy density. The energy density at this time is set such that the impurity implanted into the semiconductor substrate 107 is sufficiently activated, and corresponds to the first energy density of the present invention. The laser irradiation at this time corresponds to the first laser irradiation of the present invention.
試料台１０６が設置されているステージ１１０は、制御装置１１５によって移動が制御され、レーザ照射時に、ラインビームの短軸１０８方向に送り速度３０ｍｍ／秒の等速で移動する。この結果、基板１箇所に２回ラインビーム状のレーザ１０５が第１のレーザ照射として照射される。
上記工程では、半導体の不純物が十分に活性化されるエネルギー密度でレーザが照射されており、半導体基板１０７全体が全溶融域となり、不純物の活性化が十分になされる。また、この際には、パルスレーザの走査間隔で規則的に荒れが生じている。
The movement of the stage 110 on which the sample stage 106 is installed is controlled by the control device 115 and moves at a constant speed of 30 mm / sec in the direction of the minor axis 108 of the line beam during laser irradiation. As a result, the laser beam 105 in the form of a line beam is irradiated twice on the substrate as a first laser irradiation.
In the above process, the laser is irradiated at an energy density that sufficiently activates the impurities of the semiconductor, so that the entire semiconductor substrate 107 becomes the entire melting region, and the impurities are sufficiently activated. Further, at this time, roughening occurs regularly at the scanning interval of the pulse laser.
制御装置１１５では、一走査方向におけるステージ１１０の移動および第１のレーザ照射が終了すると、ステージ１１０の移動を逆方向に反転させるとともに、不揮発メモリに格納された動作パラメータに基づいてアッテネータ１０３を制御し、所望のエネルギー密度で半導体基板１０７に照射されるようにレーザの出力が調整される。すなわち、前記第１のレーザ照射の際よりも光透過率を下げ、第１のエネルギー密度より低い第２のエネルギー密度でレーザ１０５が半導体基板１０７に照射されるように調整する。この際のレーザ照射は、本発明の第２のレーザ照射に相当する。反転走査時のステージ１１０の送り速度は、前記走査時と同速度とすることができる。このときの第２のエネルギー密度は、単独では不純物を活性化するには不十分なものではあるが、半導体基板１０７の照射面上を半溶融域にして第１のレーザ照射によって生じた不規則な荒れを緩和して照射面全面を一様な荒れ状態にできるものとする。
反転走査を完了すると、活性化が行われた半導体基板１０７は、搬送ロボット１１１によって取り出し、新たな処理対象となる半導体基板１０７をカセット１１２内から搬送して試料台１０６に設置することで、上記工程を効率よく繰り返すことができる。
When the movement of the stage 110 and the first laser irradiation in one scanning direction are completed, the control device 115 reverses the movement of the stage 110 in the reverse direction and controls the attenuator 103 based on the operating parameters stored in the nonvolatile memory. Then, the output of the laser is adjusted so that the semiconductor substrate 107 is irradiated with a desired energy density. That is, the light transmittance is lowered as compared with the first laser irradiation, and the semiconductor substrate 107 is adjusted to be irradiated with the second energy density lower than the first energy density. The laser irradiation at this time corresponds to the second laser irradiation of the present invention. The feed speed of the stage 110 during reverse scanning can be the same as that during scanning. The second energy density at this time is not sufficient for activating the impurities alone, but the irregularity generated by the first laser irradiation with the irradiation surface of the semiconductor substrate 107 as a semi-molten region. The rough surface is alleviated and the entire irradiated surface can be made into a uniform rough state.
When the reverse scanning is completed, the activated semiconductor substrate 107 is taken out by the transfer robot 111, and the semiconductor substrate 107 to be newly processed is transferred from the cassette 112 and placed on the sample stage 106, whereby The process can be repeated efficiently.
次に、上記実施形態の装置を使って実施した活性化の例を以下に示す。
ここでは、例えばＰ型の不純物として５×１０１４／ｃｍ２でＢを５ｋｅＶでイオン注入した８インチのＳｉ基板を使い活性化試験を行った。Ｐ型の不純物としては、ＢまたはＢＦ２などを用いることも可能であり、Ｎ型の不純物を用いることも可能である。また、本発明はイオン注入する不純物の濃度に影響を受けないため、任意の不純物濃度で実施することができる。
実際の裏面照射型の撮像素子に使われる基板は、表面に支持基板があり、その支持基板の裏面に薄いＳｉ層が接着されている。この裏面側の薄いＳｉ層の裏面側にＰ型不純物のイオン注入がなされ、Ｓｉ層表面側に配線層又は電極層と絶縁膜が形成され、Ｓｉ層の裏面側からレーザ照射が行われるが、半導体領域の活性化試験の確認には、これらの層が形成されていない基板で充分である。したがって、本実施例では、Ｓｉ層表面側に配線等が形成されていないＳｉ基板について評価を行った。
本実施例では、ビームの長軸と短軸半値幅で定義したエネルギー密度を用い、エネルギー密度を０．６〜１．３Ｊ／ｃｍ２として前記Ｓｉ基板にレーザを照射し、シート抵抗を計測したところ図２の結果を得た。このときの０．９、１．０、１．１、１．２Ｊ／ｃｍ２のエネルギー密度における表面形状の計測結果を、走査型プローブ顕微鏡（Scanning Probe Microscope：ＳＰＭ）により測定し、その結果を図３に示した。また、該エネルギー密度における半導体基板上の位置によるシート抵抗の分布を図４に示した。
Next, an example of activation performed using the apparatus of the above embodiment is shown below.
Here, for example, an activation test was performed using an 8-inch Si substrate in which B was ion-implanted at 5 keV at 5 × 10 14 / cm 2 as a P-type impurity. As the P-type impurity, B or BF 2 can be used, and an N-type impurity can also be used. In addition, since the present invention is not affected by the concentration of impurities to be ion-implanted, the present invention can be carried out at any impurity concentration.
A substrate used for an actual back-illuminated image sensor has a support substrate on the surface, and a thin Si layer is bonded to the back surface of the support substrate. P type impurities are ion-implanted on the back side of this thin Si layer on the back side, a wiring layer or an electrode layer and an insulating film are formed on the Si layer surface side, and laser irradiation is performed from the back side of the Si layer. A substrate on which these layers are not formed is sufficient for confirming the activation test of the semiconductor region. Therefore, in this example, evaluation was performed on a Si substrate on which no wiring or the like was formed on the Si layer surface side.
In this example, the energy density defined by the major axis and minor axis half width of the beam was used, the energy density was 0.6 to 1.3 J / cm 2 , the laser was irradiated to the Si substrate, and the sheet resistance was measured. However, the result of FIG. 2 was obtained. The measurement result of the surface shape at an energy density of 0.9, 1.0, 1.1, 1.2 J / cm 2 at this time was measured by a scanning probe microscope (SPM), and the result was This is shown in FIG. In addition, FIG. 4 shows the sheet resistance distribution depending on the position on the semiconductor substrate at the energy density.
図３に示すように、０．９Ｊ／ｃｍ２のエネルギー密度でレーザを照射すると、Ｓｉ基板の表面はほとんど平滑で、１．０Ｊ／ｃｍ２では不規則に全面が一様に荒れ、１．１，１．２Ｊ／ｃｍ２で部分的に不規則な表面荒れ形状を形成した。また、図２に示すように、１．１Ｊ／ｃｍ２以上のエネルギー密度では、シート抵抗が十分に低く、エネルギー密度の相違によるシート抵抗の変化は小さく、略一定の値を示している。また、図４に示すように、１．１Ｊ／ｃｍ２以上のエネルギー密度では、半導体基板の位置に拘わらず、安定したシート抵抗を示しているが、０．９、１．０Ｊ／ｃｍ２のエネルギー密度では、半導体基板の位置によってシート抵抗にばらつきが生じていた。これは、工程中にレーザのエネルギー密度が変動すると、その変動がシート抵抗の変動として出現するためである。したがって、この例では、第１のレーザ照射においては、シート抵抗が略一定になる１．１Ｊ／ｃｍ２以上のエネルギー密度とするのが望ましいことが分かる。 As shown in FIG. 3, is irradiated with laser at an energy density of 0.9 J / cm 2, the surface of the Si substrate is almost smooth, irregular in 1.0 J / cm 2 the entire surface uniformly rough, 1. A partially irregular surface roughness shape was formed at 1,1.2 J / cm 2 . As shown in FIG. 2, at an energy density of 1.1 J / cm 2 or more, the sheet resistance is sufficiently low, and the change in sheet resistance due to the difference in energy density is small, indicating a substantially constant value. Further, as shown in FIG. 4, at an energy density of 1.1 J / cm 2 or more, stable sheet resistance is shown regardless of the position of the semiconductor substrate, but 0.9 and 1.0 J / cm 2 . In the energy density, the sheet resistance varies depending on the position of the semiconductor substrate. This is because if the energy density of the laser fluctuates during the process, the fluctuation appears as a fluctuation in sheet resistance. Therefore, in this example, it can be seen that in the first laser irradiation, it is desirable to set the energy density to 1.1 J / cm 2 or more at which the sheet resistance becomes substantially constant.
次に、１．２Ｊ／ｃｍ２のエネルギー密度のレーザ照射によって不純物を活性化した基板に、０．９５、１．０、１．０５Ｊ／ｃｍ２のエネルギー密度でレーザを照射し、シート抵抗と表面形状（ＳＰＭによる）を測定した。その結果を図５、６に示す。図５に示すように、シート抵抗は１．２Ｊ／ｃｍ２の１回目の照射で低くなったままであり、図６に示すように表面が不規則に全面一様に荒れたＳｉ基板が得られた。この基板で作製した固体撮像素子では、照射ピッチのムラのない高品質なものが得られる。 Next, the substrate on which the impurity is activated by the laser irradiation energy density of 1.2 J / cm 2, was irradiated with laser at an energy density of 0.95,1.0,1.05J / cm 2, the sheet resistance and the The surface shape (by SPM) was measured. The results are shown in FIGS. As shown in FIG. 5, the sheet resistance remains low after the first irradiation of 1.2 J / cm 2 , and a Si substrate having a surface that is irregularly and uniformly rough as shown in FIG. 6 is obtained. It was. In the solid-state imaging device manufactured with this substrate, a high-quality one without uneven irradiation pitch can be obtained.
１００ レーザアニール装置
１０１ レーザ光源
１０６ 試料台
１０７ 半導体基板
１１０ ステージ
１１５ 制御装置
DESCRIPTION OF SYMBOLS 100 Laser annealing apparatus 101 Laser light source 106 Sample stage 107 Semiconductor substrate 110 Stage 115 Control apparatus
Claims (11)
前記不純物が活性化される第１のエネルギー密度によって前記半導体に第１のレーザを照射した後、前記第１のエネルギー密度よりも低い第２のエネルギー密度によって前記半導体の前記第１のレーザが照射された照射面上に第２のレーザを照射することを特徴とする半導体基板の製造方法。 In a method of manufacturing a semiconductor substrate that activates impurities implanted in a semiconductor by irradiating the semiconductor with a laser,
After the semiconductor is irradiated with a first laser with a first energy density that activates the impurities, the first laser of the semiconductor is irradiated with a second energy density lower than the first energy density. A method of manufacturing a semiconductor substrate, comprising: irradiating the irradiated surface with a second laser.
該制御部は、前記ステージを第１の方向に移動させる際に前記エネルギー調整手段によって第１のエネルギー密度が得られるように前記レーザの出力を調整し、前記ステージを前記第１の方向と逆方向の第２の方向に移動させる際に、該移動に連動して、前記エネルギー調整手段によって前記第１のエネルギー密度よりも低い第２のエネルギー密度が得られるように前記レーザの出力を調整する制御を行うことを特徴とする半導体基板製造装置。 A laser light source for outputting a laser, energy adjusting means for adjusting the output of the laser from the laser light source, and an optical system for shaping the laser whose output is adjusted by the energy adjusting means into a predetermined beam shape and guiding it to the semiconductor A stage for installing the semiconductor and reciprocating in at least one axial direction; and a control unit for controlling output adjustment of the energy adjusting means and movement of the stage,
The control unit adjusts the output of the laser so that a first energy density is obtained by the energy adjusting means when the stage is moved in the first direction, and the stage is reversed to the first direction. When moving in the second direction, the laser output is adjusted so that a second energy density lower than the first energy density is obtained by the energy adjusting means in conjunction with the movement. A semiconductor substrate manufacturing apparatus characterized by performing control.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009295898A JP5203348B2 (en) | 2009-12-25 | 2009-12-25 | Semiconductor substrate manufacturing method and semiconductor substrate manufacturing apparatus |
| PCT/JP2010/070206 WO2011077851A1 (en) | 2009-12-25 | 2010-11-12 | Process for production of semiconductor substrate, and device for production of semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009295898A JP5203348B2 (en) | 2009-12-25 | 2009-12-25 | Semiconductor substrate manufacturing method and semiconductor substrate manufacturing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011138806A true JP2011138806A (en) | 2011-07-14 |
| JP5203348B2 JP5203348B2 (en) | 2013-06-05 |
Family
ID=44195395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009295898A Expired - Fee Related JP5203348B2 (en) | 2009-12-25 | 2009-12-25 | Semiconductor substrate manufacturing method and semiconductor substrate manufacturing apparatus |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5203348B2 (en) |
| WO (1) | WO2011077851A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019125748A (en) * | 2018-01-18 | 2019-07-25 | トヨタ自動車株式会社 | Manufacturing method of semiconductor device |
| WO2020009281A1 (en) * | 2018-07-06 | 2020-01-09 | 고려대학교 산학협력단 | Hybrid method for activating impurity |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT201900006678A1 (en) * | 2019-05-09 | 2020-11-09 | H&S Qualita Nel Software S P A | USER INTERFACE SYSTEM FOR TELEMEDICINE AND TELEMONITORING |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000012460A (en) * | 1998-06-24 | 2000-01-14 | Matsushita Electric Ind Co Ltd | Method and device for preparing thin film |
| JP2000353755A (en) * | 1999-06-10 | 2000-12-19 | Nec Corp | Manufacture of semiconductor device |
| JP2006156784A (en) * | 2004-11-30 | 2006-06-15 | Sumitomo Heavy Ind Ltd | Manufacturing method for semiconductor device and laser annealing device |
| JP2008211136A (en) * | 2007-02-28 | 2008-09-11 | Sumitomo Heavy Ind Ltd | Laser annealing device and method |
| JP2008251839A (en) * | 2007-03-30 | 2008-10-16 | Ihi Corp | Laser annealing method and device |
| JP2009094496A (en) * | 2007-09-21 | 2009-04-30 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for manufacturing the same |
| JP2009267095A (en) * | 2008-04-25 | 2009-11-12 | Japan Steel Works Ltd:The | Method of manufacturing semiconductor |
-
2009
- 2009-12-25 JP JP2009295898A patent/JP5203348B2/en not_active Expired - Fee Related
-
2010
- 2010-11-12 WO PCT/JP2010/070206 patent/WO2011077851A1/en active Application Filing
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000012460A (en) * | 1998-06-24 | 2000-01-14 | Matsushita Electric Ind Co Ltd | Method and device for preparing thin film |
| JP2000353755A (en) * | 1999-06-10 | 2000-12-19 | Nec Corp | Manufacture of semiconductor device |
| JP2006156784A (en) * | 2004-11-30 | 2006-06-15 | Sumitomo Heavy Ind Ltd | Manufacturing method for semiconductor device and laser annealing device |
| JP2008211136A (en) * | 2007-02-28 | 2008-09-11 | Sumitomo Heavy Ind Ltd | Laser annealing device and method |
| JP2008251839A (en) * | 2007-03-30 | 2008-10-16 | Ihi Corp | Laser annealing method and device |
| JP2009094496A (en) * | 2007-09-21 | 2009-04-30 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for manufacturing the same |
| JP2009267095A (en) * | 2008-04-25 | 2009-11-12 | Japan Steel Works Ltd:The | Method of manufacturing semiconductor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019125748A (en) * | 2018-01-18 | 2019-07-25 | トヨタ自動車株式会社 | Manufacturing method of semiconductor device |
| JP7087401B2 (en) | 2018-01-18 | 2022-06-21 | 株式会社デンソー | Manufacturing method of semiconductor device |
| WO2020009281A1 (en) * | 2018-07-06 | 2020-01-09 | 고려대학교 산학협력단 | Hybrid method for activating impurity |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5203348B2 (en) | 2013-06-05 |
| WO2011077851A1 (en) | 2011-06-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6312636B2 (en) | Method and apparatus for irradiating a semiconductor material surface with laser energy | |
| US20090227121A1 (en) | Semiconductor device manufacturing method and semiconductor device manufacturing system | |
| JP2006237525A (en) | Laser irradiation method and equipment | |
| JP2008527682A (en) | Laser hard marking method and system | |
| JP5430488B2 (en) | Laser annealing processing apparatus, laser annealing processing body manufacturing method, and laser annealing processing program | |
| JP5246716B2 (en) | Semiconductor substrate manufacturing method and laser annealing apparatus | |
| WO2012004903A1 (en) | Laser annealing device and laser annealing method | |
| KR20110094022A (en) | Systems and methods for the crystallization of thin films | |
| JP5203348B2 (en) | Semiconductor substrate manufacturing method and semiconductor substrate manufacturing apparatus | |
| US7157677B2 (en) | Method of picking up sectional image of laser light | |
| JP5904590B2 (en) | Crystalline semiconductor manufacturing method and crystalline semiconductor manufacturing apparatus | |
| JP5366023B2 (en) | Laser annealing method and apparatus | |
| TWI633589B (en) | Laser annealing device and method thereof | |
| TW201232594A (en) | Manufacturing method and manufacturing apparatus for semiconductor device | |
| JP2005116729A (en) | Laser processing apparatus and method therefor | |
| JP5800654B2 (en) | Laser annealing apparatus and laser annealing method | |
| JP5788855B2 (en) | Laser processing method and laser processing apparatus | |
| JP2012134228A (en) | Laser annealing method and laser annealing device | |
| JP2005011840A (en) | Device and method for laser annealing | |
| JP2019110153A (en) | Annealing method and annealing apparatus | |
| JP2014195004A (en) | Process of manufacturing semiconductor element and manufacturing apparatus of semiconductor element | |
| JP5309059B2 (en) | Method and apparatus for determining microcrystallization | |
| JP2005219077A (en) | Laser energy adjusting apparatus, laser energy adjusting method, and laser beam machine | |
| JP6004980B2 (en) | Laser processing apparatus and laser processing method | |
| JP4430418B2 (en) | Ion implantation method and ion implanter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20111130 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120228 |
|
| A911 | Transfer of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20120315 |
|
| A912 | Removal of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20120406 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130121 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130213 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160222 Year of fee payment: 3 |
|
| LAPS | Cancellation because of no payment of annual fees |