JP2011134597A5 - Heating apparatus, substrate processing apparatus, and semiconductor device manufacturing method - Google Patents
Heating apparatus, substrate processing apparatus, and semiconductor device manufacturing method Download PDFInfo
- Publication number
- JP2011134597A5 JP2011134597A5 JP2009293177A JP2009293177A JP2011134597A5 JP 2011134597 A5 JP2011134597 A5 JP 2011134597A5 JP 2009293177 A JP2009293177 A JP 2009293177A JP 2009293177 A JP2009293177 A JP 2009293177A JP 2011134597 A5 JP2011134597 A5 JP 2011134597A5
- Authority
- JP
- Japan
- Prior art keywords
- shell
- insulator
- heating
- support fitting
- processing chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Description
本発明は、加熱装置、特に、半導体製造における被処理基板を処理室に収容して発熱体により加熱した状態で処理を施す熱処理用の加熱装置及び基板処理装置並びに半導体装置の製造方法に関する。さらに詳しくは、筒状のシェルと、前記シェルの内周に吊り下げ支持されると共に処理室を加熱する発熱体と、前記発熱体を前記シェルに支持する支持金具と、前記支持金具に前記発熱体を取り付ける碍子と、を備えた加熱装置及び基板処理装置並びに半導体装置の製造方法に関する。 The present invention relates to a heating apparatus, and more particularly to a heating apparatus, a substrate processing apparatus, and a semiconductor device manufacturing method for performing processing in a state where a substrate to be processed in semiconductor manufacturing is accommodated in a processing chamber and heated by a heating element. More specifically, a cylindrical shell, a heating element that is supported by being suspended from the inner periphery of the shell and that heats the processing chamber, a support fitting that supports the heating element on the shell, and the heating metal that generates heat. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heating apparatus, a substrate processing apparatus, and a semiconductor device manufacturing method including an insulator for attaching a body.
かかる従来の実情に鑑みて、本発明は、フランジの熱変形による垂れを防止することが可能な加熱装置及び基板処理装置並びに半導体装置の製造方法を提供することを目的とする。 In view of such conventional circumstances, an object of the present invention is to provide a heating apparatus, a substrate processing apparatus, and a method for manufacturing a semiconductor device that can prevent a flange from drooping due to thermal deformation.
上記目的を達成するため、本発明に係る加熱装置の特徴は、筒状のシェルと、前記シェルの内周に吊り下げ支持されると共に処理室を加熱する発熱体と、前記発熱体を前記シェルに支持する支持金具と、前記支持金具に前記発熱体を取り付ける碍子と、を備えた構成において、前記支持金具は、前記シェルに前記支持金具を固定するための固定部と、前記シェルの内側方向に突出させるように設けられたフランジとを有し、前記フランジは、前記碍子が取り付けられる碍子取付部を複数有し、前記複数の碍子取付部の間にスリットを有することにある。 In order to achieve the above object, the heating device according to the present invention is characterized by a cylindrical shell, a heating element supported by being suspended from the inner periphery of the shell and heating a processing chamber, and the heating element as the shell. And a support for attaching the heating element to the support fitting. The support fitting includes a fixing portion for fixing the support fitting to the shell, and an inner direction of the shell. The flange includes a plurality of insulator attachment portions to which the insulator is attached, and has a slit between the plurality of insulator attachment portions.
上記本発明に係る加熱装置及び基板処理装置並びに半導体装置の製造方法の特徴によれば、フランジが熱膨張しても、その膨張長はスリットに吸収され、変形が抑制される。しかも、各碍子取付部に固定部を有しているので、ヒーターで最も加熱される各碍子取付部は固定部によりシェルに接続され、過熱による熱変形は抑制される。 According to the features of the heating apparatus, the substrate processing apparatus, and the semiconductor device manufacturing method according to the present invention, even if the flange is thermally expanded, the expansion length is absorbed by the slit and the deformation is suppressed. Moreover, since each insulator mounting portion has a fixing portion, each insulator mounting portion that is heated most by the heater is connected to the shell by the fixing portion, and thermal deformation due to overheating is suppressed.
この他の目的を達成するため、本発明に係る加熱装置の態様は、前記固定部は、前記複数の碍子取付部のそれぞれに対応する位置に配置されると共に、多角形又は円弧状に形成される。 In order to achieve the other object, in the heating device according to the present invention, the fixing portion is arranged at a position corresponding to each of the plurality of insulator mounting portions, and is formed in a polygonal shape or an arc shape. The
同構成によれば、固定部が多角形又は円弧状であるため、インナシェルとの接触面積が減り、過度の吸熱を抑制することができる。さらに、上記態様に加え、前記支持金具は、前記フランジと前記シェルとの間に隙間を形成するように前記固定部を設ける。フランジとインナシェルとの間に隙間を有しているため、インナシェルとの接触面積が減り、過度の吸熱が抑制される。これにより、熱伝導性を低下させることができる。
本発明に係る基板処理装置の態様は、基板を処理する処理室と、前記処理室を加熱する加熱装置と、を備え、前記加熱装置は、筒状のシェルと、前記シェルの内周に吊り下げ支持されると共に前記処理室を加熱する発熱体と、前記発熱体を前記シェルに支持する支持金具と、前記支持金具に前記発熱体を取り付ける碍子とを備え、前記支持金具は、前記シェルに前記支持金具を固定するための固定部と、前記シェルの内側方向に突出させるように設けられたフランジとを有し、前記フランジは、前記碍子が取り付けられる碍子取付部を複数有し、前記複数の碍子取付部の間にスリットを有する。
本発明に係る半導体装置の製造方法の態様は、基板を処理室に装入する工程と、前記処理室を、筒状のシェルと前記シェルの内周に吊り下げ支持されると共に前記処理室を加熱する発熱体と、前記発熱体を前記シェルに支持する支持金具と、前記支持金具に前記発熱体を取り付ける碍子とを備え、前記支持金具は、前記シェルに前記支持金具を固定するための固定部と、前記シェルの内側方向に突出させるように設けられたフランジとを有し、前記フランジは、前記碍子を設置するための貫通孔を少なくとも複数有し、前記複数の貫通孔の間にはスリットを有する加熱装置によって所定温度に加熱する工程と、前記加熱工程によって前記処理室を所定温度に加熱した状態で反応ガスを使用して前記基板を処理する工程と、を有する。
According to the same structure, since a fixing | fixed part is polygonal or circular arc shape, a contact area with an inner shell reduces and excessive heat absorption can be suppressed. Further, in addition to the above aspect, the support fitting includes the fixing portion so as to form a gap between the flange and the shell. Since there is a gap between the flange and the inner shell, the contact area with the inner shell is reduced, and excessive heat absorption is suppressed. Thereby, thermal conductivity can be reduced.
An aspect of a substrate processing apparatus according to the present invention includes a processing chamber for processing a substrate and a heating device for heating the processing chamber, and the heating device is suspended on a cylindrical shell and an inner periphery of the shell. A heating element that is supported by being lowered and that heats the processing chamber, a support fitting that supports the heating element on the shell, and an insulator that attaches the heating element to the support fitting, and the support fitting is attached to the shell. A fixing portion for fixing the support fitting; and a flange provided so as to protrude inward of the shell. The flange includes a plurality of insulator mounting portions to which the insulator is attached. There is a slit between the insulator mounting portions.
An aspect of a method for manufacturing a semiconductor device according to the present invention includes a step of loading a substrate into a processing chamber, and the processing chamber is supported by being suspended from a cylindrical shell and an inner periphery of the shell, and the processing chamber is A heating element for heating, a support fitting for supporting the heating element to the shell, and an insulator for attaching the heating element to the support fitting, the support fitting being fixed for fixing the support fitting to the shell And a flange provided so as to protrude inward of the shell, the flange having at least a plurality of through holes for installing the insulator, and between the plurality of through holes A step of heating to a predetermined temperature by a heating device having a slit, and a step of processing the substrate using a reactive gas in a state where the processing chamber is heated to a predetermined temperature by the heating step.
Claims (5)
前記シェルの内周に吊り下げ支持されると共に処理室を加熱する発熱体と、
前記発熱体を前記シェルに支持する支持金具と、
前記支持金具に前記発熱体を取り付ける碍子と、を備えた加熱装置であって、
前記支持金具は、前記シェルに前記支持金具を固定するための固定部と、前記シェルの内側方向に突出させるように設けられたフランジとを有し、
前記フランジは、前記碍子が取り付けられる碍子取付部を複数有し、前記複数の碍子取付部の間にスリットを有する加熱装置。 A cylindrical shell,
A heating element that is supported by being suspended from the inner periphery of the shell and that heats the processing chamber;
A support fitting for supporting the heating element on the shell;
A heater for attaching the heating element to the support metal fitting,
The support fitting has a fixing portion for fixing the support fitting to the shell, and a flange provided so as to protrude in the inner direction of the shell,
The flange has a plurality of insulator attachment portions to which the insulator is attached, and has a slit between the plurality of insulator attachment portions.
前記処理室を加熱する加熱装置と、を備え、
前記加熱装置は、筒状のシェルと、
前記シェルの内周に吊り下げ支持されると共に前記処理室を加熱する発熱体と、
前記発熱体を前記シェルに支持する支持金具と、
前記支持金具に前記発熱体を取り付ける碍子とを備え、
前記支持金具は、前記シェルに前記支持金具を固定するための固定部と、前記シェルの内側方向に突出させるように設けられたフランジとを有し、
前記フランジは、前記碍子が取り付けられる碍子取付部を複数有し、前記複数の碍子取付部の間にスリットを有する基板処理装置。 A processing chamber for processing the substrate;
A heating device for heating the processing chamber,
The heating device includes a cylindrical shell,
A heating element that is supported by being suspended from the inner periphery of the shell and that heats the processing chamber;
A support fitting for supporting the heating element on the shell;
An insulator for attaching the heating element to the support fitting;
The support fitting has a fixing portion for fixing the support fitting to the shell, and a flange provided so as to protrude in the inner direction of the shell,
The flange has a plurality of insulator attachment portions to which the insulator is attached, and has a slit between the plurality of insulator attachment portions.
前記処理室を、筒状のシェルと前記シェルの内周に吊り下げ支持されると共に前記処理室を加熱する発熱体と、前記発熱体を前記シェルに支持する支持金具と、前記支持金具に前記発熱体を取り付ける碍子とを備え、前記支持金具は、前記シェルに前記支持金具を固定するための固定部と、前記シェルの内側方向に突出させるように設けられたフランジとを有し、前記フランジは、前記碍子を設置するための貫通孔を少なくとも複数有し、前記複数の貫通孔の間にはスリットを有する加熱装置によって所定温度に加熱する工程と、
前記加熱工程によって前記処理室を所定温度に加熱した状態で反応ガスを使用して前記基板を処理する工程と、を有する半導体装置の製造方法。 Loading the substrate into the processing chamber;
The processing chamber is suspended and supported by a cylindrical shell and an inner periphery of the shell, and the heating chamber is heated, a support bracket that supports the heating body to the shell, and the support bracket An insulator for attaching a heating element, and the support fitting includes a fixing portion for fixing the support fitting to the shell, and a flange provided so as to protrude inward of the shell, the flange Has at least a plurality of through holes for installing the insulator, and is heated to a predetermined temperature by a heating device having a slit between the plurality of through holes;
And a step of processing the substrate using a reactive gas in a state where the processing chamber is heated to a predetermined temperature by the heating step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009293177A JP5584461B2 (en) | 2009-12-24 | 2009-12-24 | Heating apparatus, substrate processing apparatus, and semiconductor device manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009293177A JP5584461B2 (en) | 2009-12-24 | 2009-12-24 | Heating apparatus, substrate processing apparatus, and semiconductor device manufacturing method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011134597A JP2011134597A (en) | 2011-07-07 |
| JP2011134597A5 true JP2011134597A5 (en) | 2013-02-14 |
| JP5584461B2 JP5584461B2 (en) | 2014-09-03 |
Family
ID=44347104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009293177A Active JP5584461B2 (en) | 2009-12-24 | 2009-12-24 | Heating apparatus, substrate processing apparatus, and semiconductor device manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5584461B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4381390B2 (en) * | 2006-04-17 | 2009-12-09 | 三菱重工業株式会社 | Vacuum processing equipment |
| JP4472007B2 (en) * | 2007-06-25 | 2010-06-02 | 株式会社日立国際電気 | Heating apparatus, substrate processing apparatus using the same, semiconductor device manufacturing method, and penetrating member |
-
2009
- 2009-12-24 JP JP2009293177A patent/JP5584461B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN206166726U (en) | A heat -generating body device for air is complained and quarrel loudly | |
| JP2017502514A5 (en) | ||
| JP2014082318A5 (en) | ||
| JP2015536048A5 (en) | ||
| US9466515B2 (en) | Heat treatment furnace and heat treatment apparatus | |
| JP2008016396A (en) | Heater unit | |
| JP2011134597A5 (en) | Heating apparatus, substrate processing apparatus, and semiconductor device manufacturing method | |
| WO2007105798A1 (en) | Heat shield plate for substrate annealing apparatus | |
| JP5795058B2 (en) | Equipment for heating workpieces, especially rolling bearings | |
| JP2012009702A5 (en) | ||
| CN103928373B (en) | A kind of semiconductor heat treatment equipment | |
| KR101489366B1 (en) | Vacuum effusion cell | |
| CN101646332A (en) | Radiating device | |
| JPWO2020261466A5 (en) | Insulation structure, substrate processing equipment, semiconductor device manufacturing method, substrate processing method and program | |
| JP2007170395A (en) | Heat shield installed on heat radiation object especially rocket engine | |
| KR101433824B1 (en) | Pre-heating and post-heating apparatus for welding | |
| JP6298727B2 (en) | Electric heater and heating apparatus provided with the same | |
| JP3187477U (en) | Anti-condensation radiator | |
| JP5504102B2 (en) | Heater unit | |
| CN210951857U (en) | Heating component for air supply equipment and air supply equipment with same | |
| CN204027309U (en) | For the heater of metal bar heating | |
| JP7375514B2 (en) | Plate glass manufacturing equipment and method for producing plate glass | |
| JP2014007111A (en) | Heater and heat transfer member | |
| KR102157573B1 (en) | Heater for heat treatment of substrate and substrate heat treatment apparatus using it | |
| CN202008164U (en) | Fixing device for electric heating coil support of plastic stove |