JP4381390B2 - Vacuum processing equipment - Google Patents

Description

  The present invention relates to a vacuum processing apparatus that performs plasma processing such as film formation on a substrate in a vacuum state such as a plasma CVD apparatus, a sputtering apparatus, and a dry etching apparatus.

Conventionally, when a semiconductor such as a silicon solar cell is manufactured, a plasma CVD apparatus, a sputtering apparatus (both vacuum processing apparatuses) and the like are used as apparatuses for performing the film forming process. Here, the plasma CVD apparatus 10 using the plasma shown in FIG. 7 will be described as an example as a representative example.
The plasma CVD apparatus 10 is a film forming system in which a ladder electrode 13 is provided on both side surfaces in the approximate center of a vacuum chamber (not shown) that forms a film forming chamber (processing chamber) that is decompressed to a vacuum state by a vacuum pump (not shown). A substrate heater 16 is provided on both sides of the film forming unit 11 via a heater cover 15 (pedestal).

In this plasma CVD apparatus 10, a film forming gas that is a processing source gas including a source gas made of SiH ₄ is sent in a vacuum state in which the vacuum chamber is decompressed.
When high frequency power is supplied to the ladder electrode 13, plasma is generated in the vacuum chamber, and a film such as amorphous silicon is formed on the substrate K placed on the heater cover 15 and heated by the substrate heater 16. It has come to be.

Although the substrate K is seated and fixed on the substrate heater cover 15, as a means for fixing the substrate K to the heater cover 15, a substrate holding member 20 as shown in FIG. Is provided.
The substrate holding member 20 holds the substrate K and the heater cover 15 in a good contact state by pressing the periphery (edge) of the substrate K, while maintaining the contact state between the substrate K and the heater cover 15 in a good state. It plays a role of preventing the film in the film formation from adhering to the surface of the substrate facing the surface.

  Now, as shown in FIG. 8 in which the lower part of the substrate holding member 20 is enlarged, the substrate holding member 20 has a thickness dimension 2t that is about twice the substrate thickness t because it is necessary to hold the substrate K securely. Is formed. For example, if the substrate K is a large area type substrate K having a size exceeding 1 m on each side, the substrate thickness is about 3 to 4 mm. It has been considered that the thickness of the substrate holding member 20 is preferably about 8 mm, which is about twice the substrate thickness.

  The shape of the substrate holding member 20 will be described in more detail. The thickness required to substantially hold the periphery of the substrate K is considered to be appropriate to the thickness equivalent to the substrate thickness in consideration of the material and the like. It was. Accordingly, considering the above example, the substrate holding member 20 having a thickness of 8 mm, which is obtained by adding 4 mm of the substrate thickness to the thickness of the portion directly holding the substrate K, is disposed on the upper surface of the heater cover 15. The board | substrate K was hold | suppressed by the stepped part S by which half of the plate | board thickness was shaved.

  However, the portion of the upper surface of the heater cover 15 that is larger than the substrate K, that is, the conventional substrate holding member 20 is present around the substrate K. This portion is connected to the ladder electrode 13. Since the distance between the substrates K is 10% or more, and the plasma state around the substrate is changed, the convex substrate holding member 20 may affect the film forming process in plasma or the like. It became. That is, there has been a problem that the film thickness distribution in the film forming process tends to be non-uniform.

However, in the case of a small and thin substrate having a substrate thickness of about 1 mm, the rigidity for fixing the substrate is not so much required, so the substrate holding member is formed thin and the convex portion around the substrate is small. . For this reason, the conventional film forming process has not had a great influence on the film forming process.
However, if a convex portion larger than the surface height of the substrate K exists around the substrate K, a narrow portion is generated in the distance between the ladder electrode 13 and the substrate K, or a material having a different dielectric constant is installed. As a result, the capacitor capacity changes, the discharge state of plasma and the like is disturbed, the film thickness distribution in the film forming process becomes non-uniform, and the film forming process becomes thinner and thicker. It became difficult to do.

  In addition, the above-mentioned tendency remarkably appears in a high-frequency discharge region of 40 MHz to 100 MHz, and is a problem to be solved particularly in a film forming process using this region. In such a high-frequency region, if there is a difference in the capacitor capacity of the substrate K of the element exposed to the high frequency or the substrate holding member 20, the discharge state of plasma or the like is similarly disturbed and the film forming process is stabilized. There is a concern that the substrate holding member 20 does not affect the film forming process.

  The present invention has been made in view of the above circumstances, and it is possible to stabilize the discharge state in plasma or the like around the substrate, and to more uniformly lead the film thickness distribution in the film forming process in a vacuum state. An object of the present invention is to provide a vacuum processing apparatus having a substrate holding member.

The present invention employs the following means in order to solve the above problems.
According to the first aspect of the present invention, a substrate having a side exceeding 1 m is fixed to a pedestal installed in the processing chamber via a substrate holding member, and the substrate is guided to a vacuum state to perform plasma processing such as film formation of the substrate. In the vacuum processing apparatus, the substrate holding member includes a plate member that holds the end of the substrate and a support member that supports the plate member, and the plate member has a thickness of 5% to 30% of the substrate thickness. A holding portion bent to match the shape of the end portion of the substrate, and a connection portion bent to obtain a fitting structure to the support member, wherein the support member is connected to the plate member. And a portion having a thickness substantially the same as the thickness of the substrate, and a groove portion formed so that the connection portion is fitted to the end side connected to the plate member.

  According to the present invention, the substrate holding member includes a plate member having a thickness of 5% to 30% of the substrate thickness and a support member having a thickness portion equivalent to the substrate thickness, so that the substrate holding member is thin. Thus, the film forming process for the substrate is performed accurately. That is, since there is no longer a convex portion on the pedestal than the substrate, the obstacle in the film forming process is removed, and the accuracy of the film forming process is improved. Further, in the case of a substrate that receives a discharge, the difference between the capacitor capacities is reduced by reducing the volume of the substrate holding member, which is an element different from the capacitor capacity, and the discharge state of plasma or the like with respect to the substrate is stabilized. In addition, the edge part of a board | substrate is prescribed | regulated with a range.

  According to a second aspect of the present invention, in the vacuum processing apparatus according to the first aspect of the present invention, the displacement difference absorption connecting means for absorbing the displacement difference after the combination of the plate member and the support member and holding the mutual connection state. It is characterized by being provided.

When configuring the substrate holding member by combining the plate member and the support member, for example, if there is heat input after combining these, the thermal deformation of the plate member and the support member due to the difference in the linear expansion coefficient and the difference in heat capacity A difference (displacement difference) may occur. If such a displacement difference occurs in the substrate holding member, the side having high thermal expansion is constrained to the side having low thermal expansion, and the shape of the substrate holding member may be deformed. As a result, it is difficult to accurately and reliably hold the substrate against the pedestal.
According to the present invention, since the displacement difference absorption connecting means is provided, the shape is obtained while the mutual displacement difference generated after combining the plate member thinner than the substrate thickness and the support member equivalent to the substrate thickness is absorbed. The connection state is maintained so as not to change. )

  According to a third aspect of the present invention, in the vacuum processing apparatus according to the first or second aspect, the plate member has an extension portion positioned between the connection portion and the pressing portion. The extension portion is formed to have a height dimension of 4% or more of the substrate length.

  According to the present invention, the substrate and the support member are disposed at a distance of 4% or more of the substrate length, and the influence of the support member is removed in the film forming process. That is, in the case where plasma is used as the film forming process, for example, if there is an element greatly different from the capacitor capacity of the substrate around the substrate, there is a high possibility that the plasma on the substrate is disturbed and the film forming process is not performed accurately. What is cited as a different capacitor capacity around the substrate is a substrate holding member that holds the substrate, and in particular by separating the support member with a thickness that tends to cause a difference in the capacitor capacity with the substrate from the substrate as in the present invention, This leads to stabilization of the plasma during film formation. Note that the difference in the capacitances of the capacitors between the substrate and the support member occurs because the materials are often different even though they have the same thickness.

  According to a fourth aspect of the present invention, in the vacuum processing apparatus according to the third aspect, the plate member is formed with a plurality of slits that intersect the extending direction of the substrate and at least partly cut out the extension portion. It is characterized by being.

  According to the present invention, the deformation of the plate member that easily deforms due to temperature distribution with respect to heat input or the like due to the extension is suppressed by the absorbing action of the slit. That is, the plate member that is greatly enlarged in the extending direction of the substrate by having the extension portion has a problem that the temperature distribution is easily generated due to heat input or the like, but the plate member is easily deformed. The deformation of the member is absorbed by the slit, and the above problem is solved. In addition, about formation of a slit, even if it cut | disconnects a thin board member so that it may cross | intersect with respect to the extending direction of a board | substrate, and it extends to a holding | suppressing part or a connection part, for example, cutting out at least a part of extension part It doesn't matter.

  According to a fifth aspect of the present invention, in the vacuum processing apparatus according to the fourth aspect of the invention, the slits are formed up to the edge of the plate member.

According to the present invention, each slit does not divide the edge of the plate member. As a result, there is no corner due to slit formation on the edge side of the plate member, so that the film forming process on the substrate is stabilized. That is, if a corner or a step is formed at the edge of the plate member by the slit, for example, when the film is formed with plasma, an abnormality of the plasma is generated from the corner and inconvenience is caused in the substrate processing. According to the present invention, since the corner portion in the slit formation does not exist, the above problem is avoided.
In addition, if the edges of the plate members are connected without being divided, the edges will not be warped and displaced due to deformation due to heat input, etc., and the shape of the pressing part located on the edge side is stable. To do. As a result, the substrate is pressed against the pedestal accurately and reliably.

  According to a sixth aspect of the present invention, in the vacuum processing apparatus of the fourth or fifth aspect, the interval between the plurality of slits is set to 100 mm or more and 150 mm or less, and the slit width is set to 0.1 mm or more and 1.0 mm or less. It is characterized by having.

  According to the present invention, when, for example, plasma is used in the film forming process, there is no abnormality in plasma from the narrow slit according to the present invention, so that the film forming process can be stabilized. Moreover, the board | substrate will be correctly hold | suppressed and fixed to a base by the arrangement | positioning which absorbs the deformation | transformation of a board member effectively.

  The invention according to claim 7 is the vacuum processing apparatus according to any one of claims 1 to 6, wherein the surface of the plate member is a rough surface.

  According to the present invention, even when a film at the time of film formation adheres to the plate member, the biting of the adhesion film adhering to the roughened plate member becomes good, and the falling off of the adhesion film is suppressed. The processing chamber in which the film forming process is performed many times is kept clean for a long time.

The vacuum processing apparatus of the present invention has the following effects.
According to the first aspect of the present invention, the substrate holding member has a thickness that is not less than 5% and not more than 30% of the substrate thickness, and has a thickness portion substantially the same as the substrate thickness. And a supporting member that supports the plate member, the substrate film-forming process is stable, and a high-quality substrate with a stable film thickness distribution can be obtained.

  According to the second aspect of the present invention, since the displacement difference absorbing connection means for holding the connection state while absorbing the displacement difference in the combination of the plate member and the support member is provided, the substrate holding member is configured as a composite. Therefore, even if a displacement difference occurs in the deformation between the plate member and the support member, it is possible to cancel the displacement difference and suppress the deformation of the substrate holding member in the connection between the plate member and the support member. Become. Therefore, the shape of the substrate holding member that accurately holds the substrate is always maintained, and according to the substrate being pressed accurately and reliably on the pedestal, high accuracy and stability can be achieved in the film forming process on the substrate. Obtainable.

  According to the invention described in claim 3, the plate member includes a pressing portion that directly presses the substrate edge, a connection portion that is connected to the support member, and an extension portion that is positioned between the connection portion and the pressing portion. Since the extension portion is formed to have a height dimension of 4% or more of the substrate length, the substrate and the support member are separated from each other and the support member in the film forming process of the substrate is formed. The influence is removed, and stabilization and work accuracy in the film forming process can be further improved.

  According to the invention described in claim 4, since the plate member is formed with a plurality of slits that intersect with the extending direction of the substrate and at least partly cut out the extended portion, the deformation of the plate member due to heat input or the like. It is possible to hold down the substrate reliably.

  In the fifth aspect of the invention, each slit formed in the plate member is formed up to the edge of the plate member, so that stable film formation can be performed. In addition, the substrate can be reliably pressed against the pedestal, and an accurate and stable film forming process can be performed.

  According to the sixth aspect of the present invention, the interval between the plurality of slits is set to 100 mm or more and 150 mm or less, and the slit width is set to 0.1 mm or more and 1.0 mm or less. Film forming treatment can be performed.

  In the seventh aspect of the invention, since the surface of the plate member is a rough surface, the process chamber is kept clean even when the film forming process is performed many times, and the process chamber is cleaned. It is possible to reduce the number of times to perform the film forming process more continuously. As a result, it is possible to increase the working efficiency of the film forming process and to form a larger number of substrates.

Next, each embodiment according to the present invention will be described with reference to the drawings.
[First Embodiment]
FIG. 1 shows, as a first embodiment of the present invention, a heater cover 15 (pedestal) on which a substrate K provided in a plasma CVD apparatus 10 according to a vacuum processing apparatus is installed, and a substrate holding member 20 according to the present invention. It is a perspective view including the cross section shown in FIG. Further, FIG. 2 is a perspective view including a cross section partially showing a range surrounded by a symbol A in FIG.
As shown in FIG. 1, the substrate holding member 20 is configured to hold the edge of the substrate K (not shown, but pressed vertically and horizontally), and at each of the vertical and horizontal positions (downward in the figure). The substrate holding member 20 is composed of two members, a thin plate member 21 and a support member 22 that supports the plate member 21.

  As shown in detail in FIG. 2, the plate member 21 is bent at a right angle in accordance with the shape of the end portion of the substrate K, and is further bent at a right angle to obtain a fitting structure to the support member 22. It has been. That is, the plate member 21 is configured by a pressing portion F that directly presses against the substrate K and a connection portion G that is connected so as to be in surface contact with a groove portion 22a described later formed on the support member 22. In addition, the edge part (upper end part U on the paper surface) of the plate member 21 is provided with a roundness to prevent the occurrence of abnormal plasma and damage to the substrate K.

  Further, the thickness of the plate member 21 is set to 0.2 to 1.0 mm within a range of 5% to 30% with respect to 3 to 4 mm which is the thickness of the large area type substrate K. The thin plate member 21 is made of non-magnetic inconel having excellent heat resistance and high corrosion resistance that is not corroded by fluorine gas or the like. Note that the contact between the plate member 21 and the fluorine-based gas occurs during the cleaning operation in the film forming chamber (processing chamber). Even a stainless steel material such as SUS304 having a low magnetic property that does not affect is effective.

Further, the surface (right side of the drawing) facing the ladder electrode (not shown) of the plate member 21 is sprayed to bring about the same effect as the blasting process. The plane is rough. Since the plate member 21 is thin and easily deformed to 1 mm or less, a rough surface of 20 to 100 μm is formed by a sprayed aluminum film different from the blast treatment for the plate member 21. And the fall-off control of the adhesion film | membrane in a film forming process is achieved.
In addition, about the surface of the supporting member 22 mentioned later, the blast process similar to the past is made | formed, and the omission of an adhesion film is suppressed by making this into a rough surface.

  As shown in FIG. 1, the support member 22 has a portion (reference numeral M) having a thickness equivalent to the substrate thickness of 4 mm on the side connected to the plate member 21, and a thickness equivalent to the conventional thickness in order to maintain its own rigidity. It is comprised with the part (code | symbol N) which has. The surface of the portion (M) having the same thickness as that of the substrate K is gently connected to the surface of the portion (N) having the same thickness as the conventional one so as not to form a corner portion, and an abnormal plasma is generated. It is prevented.

  A groove 22a parallel to the plane of the support member 22 (the extending direction of the heater cover 15) is formed at the center in the thickness direction on the end side of the support member 22 connected to the plate member 21. The groove width of the groove portion 22 a is equal to the thickness of the plate member 21, and the depth of the groove portion 22 a is formed in accordance with the height dimension of the connection portion G of the plate member 21.

As a structure in which the support member 22 supports the plate member 21, the support member 22 is formed with a plurality of screw holes 23 for attaching a plurality of set screws 25 in addition to the groove portion 22 a described above. Yes.
Correspondingly, the plate member 21 is formed with a plurality of through holes 21a for allowing the set screws 25 to pass therethrough as shown in FIG. The plurality of through holes 21 a formed in the plate member 21 are configured by a reference hole located near the center in the longitudinal direction of the plate member 21 and elongated holes formed on the left and right sides of the reference hole, respectively. The above-described configuration of the set screw 25, the screw hole 23, and the through hole 21a constitutes the displacement difference absorbing connection means according to the present invention.

Next, the operation of the substrate holding member 20 described above will be described.
By providing the supporting member 22 that supports the plate member 21 while the thin plate member 21 directly presses the substrate K, the substrate holding member 20 is thinned and the distance from the ladder electrode (for example, voltage 300 to 500 V). 30 to 40 mm), the unevenness on the substrate K side is reduced. As a result, the film forming process for the substrate K is accurately performed. That is, since there is no portion that is larger than the substrate K on the heater cover 15, the obstacle is removed in the film forming process using plasma.

  In addition, since the thickness of the support member 22 that is the main body of the substrate holding member 20 having a large capacitor capacity around the substrate K is partially equal to the substrate K, the capacitor capacity of the substrate holding member 20 is reduced. In addition, the distance from the ladder electrode (not shown) is kept the same as that of the substrate K.

  Further, when the substrate holding member 20 is configured by combining the plate member 21 and the support member 22, if there is heat input during the film forming process, heat due to a difference in linear expansion coefficient or heat capacity between the plate member 21 and the support member 22. A difference (displacement difference) occurs in the thermal deformation of each other due to the difference in expansion. However, the plate member 21 can be freely expanded and contracted in the longitudinal direction while maintaining the reference position by the reference hole provided in the plate member 21 and the long holes on both sides thereof (both indicate the reference numeral 21a). Thereby, the deformation of the plate member 21 is not restrained by the support member 22.

  In this way, the configuration of the set screw 25 and the screw holes 23 and 21a that maintain the connection state with each other while absorbing the displacement difference between the members 21 and 22 is provided as the displacement difference absorption connecting means according to the present invention. Thus, the mutual displacement difference generated after combining the plate member 21 thinner than the substrate thickness and the support member 22 equivalent to the substrate thickness is absorbed and the shape does not change. Is reliably maintained in all environments.

  According to the configuration of the present embodiment described above, the film formation on the substrate K is performed by smoothing the periphery of the substrate K, which may cause anomalies in plasma generation, and approximating the capacitor capacity with respect to the substrate K. Processing is stabilized and a high-quality substrate having a stable film thickness distribution can be obtained. In particular, the conventional film forming process with a film thickness distribution of ± 30% at a high frequency of 40 to 100 MHz has been improved to about ± 20% in the embodiment according to the present invention. In other words, it can be said that the film thickness distribution is improved by 50%.

Further, since the substrate holding member 20 is configured as a composite, even if there is a difference in the deformation amount between the plate member 21 and the support member 22, the displacement difference is offset to cancel the plate member 21 and the support member. Therefore, it is possible to suppress the deformation of the substrate holding member 20 in connection with the connection 22. As a result, the substrate K is accurately and reliably pressed onto the heater cover 15, and high accuracy and stability can be obtained in the film forming process for the substrate K.
Further, even if a film during film formation adheres to the plate member 21, the biting of the adhered film adhering to the roughened plate member 21 becomes good, and the falling off of the adhered film is suppressed, and the film is applied many times. Thus, the film forming chamber in which the film forming process is performed can be kept clean for a long time.

[Second Embodiment]
Next, a second embodiment according to the present invention will be described with reference to FIGS. The configuration of the present embodiment is different from the structure and configuration of the substrate holding member, and therefore this point will be described in detail. The other points are the same as those of the previous embodiment and the prior art, and thus are denoted by the same reference numerals. A part of the description will be omitted.

  As shown in FIG. 5 in which the range of the symbol B in FIGS. 4 and 4 is enlarged, the substrate holding member 20 according to the present embodiment is connected to the holding member F that directly presses the edge of the substrate K and the support member 22. The plate member 21 includes a plate member 21 having a connecting portion G, and an extension portion H located between the connecting portion G and the pressing portion F, and a support member 22 that supports the plate member 21. The holding part F and the connection part G have substantially the same structure as that of the first embodiment.

  The extension portion H provided on the plate member 21 has a height dimension of 50 mm with respect to the substrate length having a side length of 1 m so as to satisfy the height dimension of 4% or more of the substrate length. Is formed. The extension portion H has the above-described dimensions until it is bent from the pressing portion F and is bent again at the connection portion G, and is disposed so as to be in close contact with the heater cover 15 side.

Further, the extension H is formed with a plurality of slits 21 c that are arranged at equal intervals in the longitudinal direction (depth direction in the drawing) of the plate member 21 while intersecting the extending direction of the substrate K.
As shown in FIG. 6 when the slits 21c are viewed from the front, these slits 21c are formed so as to extend to the connection part G including the extension part H so as to be orthogonal to the longitudinal direction of the plate member 21. The connection part G is divided up to the end of the connection part G. However, it is not formed up to the pressing portion F that directly presses the substrate K, and the pressing portion F is not divided. That is, the formation of the slit 21c is stopped just before the edge on one side of the plate member 21.

  This is to prevent variation in the force and shape of holding the substrate K by warping in each portion where the holding portion is divided by the division of the holding portion F, and the corner portion formed by the division or This is also to avoid the occurrence of abnormal plasma due to a step.

  The structure of the slits 21c will be specifically described. The interval between the slits 21c is set to 100 to 150 mm, and the width of the slits 21c is set to be less than 0.5 mm in order to prevent the occurrence of abnormal plasma. And the formation range of the slit 21c is formed over all of the extension part H and the connection part G except the holding | suppressing part F as mentioned above.

  In addition, about the range which forms the slit 21c, it is required to form including the extension part H at least. This is because stress is easily generated in the extension portion H by generating a temperature distribution due to the influence of heat. By providing a slit 21c that relieves stress at least in this portion, deformation of the plate member 21 can be effectively performed. This is because it can be avoided.

Now, with such a configuration, the substrate K and the support member 22 are spaced apart at a height of 50 mm, which is the height of the extension H, and the influence of the support member 22 is removed in the film forming process. The That is, when plasma is used for the film forming process, if there is an element greatly different from the capacitor capacity of the substrate K around the substrate K, there is a high possibility that the plasma on the substrate is disturbed and the film forming process is not performed accurately. However, since the support member 22 that is one of the elements having different capacitor capacities with respect to the substrate K is separated, the stabilization of plasma during film formation is more reliably guided than in the previous embodiment.
In the present embodiment, the difference between the capacitor capacities of the substrate K and the support member 22 is caused by the difference in material even though they have the same thickness.

According to the configuration of the present embodiment described above, it is possible to separate the support member 22 from the substrate K, which is different from the capacitor capacity of the substrate K, which may cause abnormalities in the generation of plasma or the like around the substrate K. Thus, stabilization of plasma generation can be achieved, and stabilization of the film thickness distribution in the film forming process can be obtained.
Moreover, the deformation | transformation of the plate member 21 which becomes a problem by obtaining the said structure can be suppressed by formation of the slit 21c, and it is possible to hold down the board | substrate K exactly, suppressing a deformation | transformation.

  Note that the plate member 21 and the support member 22 described in the present embodiment are also roughened by blasting or aluminum spraying on the surface that receives plasma, and the adhesion film is prevented from falling off. Further, the connection between the plate member 21 and the support member is similar to the first embodiment in that the displacement difference absorbing connecting means includes each set screw 25 capable of absorbing a displacement difference and each hole 21a, 23 having a long hole or the like. Thus, the deformation of the substrate holding member 20 is suppressed.

In each of the embodiments described above, the configuration of the substrate holding member 20 has been described to provide the best effect when used in the film-forming process. Can be used as appropriate as a fixing jig for fixing to the base.
Further, although the substrate holding member has been described as being formed by a combination of the plate member 21 and the support member 22, it may be formed integrally.

It is a perspective view including the cross section explaining schematic structure of the board | substrate holding member in the 1st Embodiment of this invention. It is a perspective view including the cross section which expanded a part of board | substrate holding member of FIG. It is a top view explaining the structure of the board member in a 1st embodiment. It is a perspective view including the cross section explaining schematic structure of the board | substrate holding member in the 2nd Embodiment of this invention. FIG. 3 is a perspective view including an enlarged cross section of a part of the substrate holding member of FIG. 2. It is a top view explaining the structure of the plate member in 2nd Embodiment. It is a disassembled perspective view explaining schematic structure of the plasma CVD apparatus which is an example of a vacuum processing apparatus. It is a perspective view including the cross section explaining the structure of the conventional board | substrate holding member.

Explanation of symbols

10 Plasma CVD equipment (vacuum processing equipment)
11 Film-forming unit 13 Ladder electrode 15 Heater cover (pedestal)
16 Substrate heater 20 Substrate holding member 21 Plate member 21a Through hole (displacement difference absorbing connection means)
21c Slit 22 Support member 22a Groove 23 Screw hole (displacement difference absorbing connection means)
25 Set screw (displacement difference absorbing connection means)
K Substrate F Holding part G Connection part H Extension part

Claims (7)

In a vacuum processing apparatus for fixing a substrate having a side of more than 1 m to a pedestal installed in a processing chamber via a substrate holding member and conducting plasma processing such as film formation of the substrate by leading to a vacuum state,
The substrate holding member is composed of a plate member that holds the end of the substrate and a support member that supports the plate member,
The plate member has a thickness of 5% or more and 30% or less of the substrate thickness, and is bent to obtain a pressing portion that is bent in accordance with the shape of the end portion of the substrate and a structure that fits into the support member. With a connection part,
The support member includes a portion having a thickness substantially the same as the substrate thickness on the side connected to the plate member, and a groove formed to fit the connection portion on an end side connected to the plate member. A vacuum processing apparatus comprising:   The vacuum processing apparatus according to claim 1, further comprising a displacement difference absorption connecting means that absorbs a displacement difference after the combination of the plate member and the support member and maintains a connection state between them. The plate member is formed having an extension portion located between the connection portion and the pressing portion,
The vacuum processing apparatus according to claim 1, wherein the extension portion is formed to have a height dimension of 4% or more of the substrate length.   The vacuum processing apparatus according to claim 3, wherein the plate member is formed with a plurality of slits that intersect with the extending direction of the substrate and at least cut out a part of the extension.   The vacuum processing apparatus according to claim 4, wherein each of the slits is formed up to the edge of the plate member.   6. The vacuum processing apparatus according to claim 4, wherein an interval between the plurality of slits is 100 mm or more and 150 mm or less and a slit width is 0.1 mm or more and 1.0 mm or less. The vacuum processing apparatus according to claim 1, wherein a surface of the plate member is a rough surface.

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