JP2011129906A - Optical semiconductor device, optical pickup device using the same, and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide: a compact optical semiconductor device with high reliability whose semiconductor substrate is not broken due to the load of an inspecting probe during inspection of a CSP equipped with a hollow region; an optical semiconductor device easy to perform a direction recognition of a package; an optical pickup device using the same; and an electronic apparatus. <P>SOLUTION: A semiconductor substrate and a glass substrate are bonded by means of an adhesive layer 103 at the peripheral portion of the semiconductor substrate, and a hollow region 105 is formed in the portion surrounded by the semiconductor substrate, the glass substrate and the adhesive layer 103. In the hollow region 105, reinforcing adhesive layers 104 are formed as a buffer part at positions that correspond to respective bumps 106 disposed at equal intervals on the rear surface of the semiconductor substrate. The semiconductor substrate has a strength that withstands the load of the inspecting probe by means of the reinforcing adhesive layers 104. For direction recognition of a package, the buffer part is not disposed in an arrangement place of at least one buffer part 104b close to a corner part of the semiconductor substrate. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an optical semiconductor device using a chip size package, and more specifically, an optical semiconductor device that relaxes physical stress applied to a bump portion during inspection and reduces stress breakdown, and such an optical semiconductor device. The present invention relates to an optical pickup device and an electronic device.

  In recent years, with the higher integration and higher functionality of semiconductor integrated circuit devices, the scale of circuits has increased, leading to an increase in the size of semiconductor chips and, consequently, the increase in size of semiconductor packages. On the other hand, since electronic devices are becoming smaller and smaller, the size of semiconductor packages for electronic devices has become a problem.

  A light receiving amplification circuit for an optical pickup device emits a plurality of reflected lights generated by irradiating an optical disk medium such as a CD (Compact Disc), a DVD (Digital Versatile Disc), and a BD (Blu-ray Disc) with laser light. The light receiving element comprises a few channels of amplifiers that convert photocurrent into voltage and output it.

  Further, an infrared laser element is used as a CD, a red laser element is used as a DVD, and a blue-violet laser element is used as a BD. In recent years, monolithic two-wavelength laser elements in which laser elements of two wavelengths, infrared and red, are monolithically formed have become widespread. In such a monolithic two-wavelength laser element, each light emission position is arranged at a predetermined interval and there are two optical axes. Therefore, the light receiving side has the same dedicated light receiving element and amplifier circuit corresponding to each wavelength. The number of amplifier channels is increasing because it must be formed on a semiconductor substrate. Furthermore, since it is necessary to cope with BD, the number of channels of the amplifier is increased more and more, the semiconductor chip becomes larger, and the package for molding it has become unacceptable in the conventional size. In particular, in the case of BD compatibility, due to the blue-violet light around 405 nm where the wavelength used tends to cause a chemical change, sufficient attention must be paid to the members used inside the package.

  Therefore, in recent years, a chip size package (hereinafter abbreviated as CSP) has been proposed as a structure for reducing the package size. Specifically, an optical semiconductor chip has appeared in which an electrode penetrating from the front surface to the back surface of a semiconductor substrate is formed, and rewiring and bumps as electrode terminals are formed on the back surface side of the semiconductor substrate (Patent Document). 1).

JP 2006-228837 A

  By the way, when inspecting the electrical characteristics of the optical semiconductor device having the CSP structure, the inspection probe is simultaneously pressed against all the bumps arranged on the back surface of the semiconductor substrate to make electrical contact between the bump and the inspection probe. Therefore, the load of the inspection probe is applied to each bump. This load is also applied to the semiconductor substrate, and only the semiconductor substrate absorbs the load of the inspection probe. As a result, the semiconductor substrate cannot withstand the load of the inspection probe, cracks occur around the bumps of the semiconductor substrate, and the semiconductor substrate may be destroyed in the worst case. Further, even if the terminal does not protrude from the surface of the substrate, such as a bump terminal, the substrate may be destroyed by the probe load in the inspection using the probe.

  In the future, in order to further reduce the size of the CSP, in order to reduce the thickness of the CSP structure, a CSP structure that realizes a reduction in size and thickness and robustness is required.

  Further, along with the downsizing of the package, since it becomes difficult to recognize the direction of the package during set mounting, there arises a problem that the package is mounted in the reverse direction.

  Therefore, in view of the above-described problems, the present invention provides a highly reliable optical semiconductor device in which a semiconductor substrate is not broken by a load of an inspection probe in a CSP inspection, an optical semiconductor device that can easily recognize a package direction, and An object of the present invention is to provide an optical pickup device and an electronic apparatus using the same.

  To achieve the above object, an optical semiconductor device according to the present invention includes a semiconductor substrate having an active element formed on a first main surface and a plurality of electrode terminals formed on another main surface of the semiconductor substrate. A light transmissive member provided on the first main surface at a distance so as to face the active element, a sealing portion formed in a peripheral portion on the first main surface, A hollow region formed between the active element on the first main surface, the light transmissive member, and the sealing portion; and a buffer portion formed in at least one place in the hollow region. It is characterized by that.

  According to this configuration, since the buffer portion that can disperse the load of the inspection probe is disposed not only in the peripheral portion of the semiconductor substrate but also in the hollow region, the breakage of the semiconductor substrate due to the load of the inspection probe can be reduced.

  Further, in order to improve package direction recognition, the shape of at least one buffer portion near the corner portion of the semiconductor substrate among the buffer portions is made different from the shape of other buffer portions, or the buffer portions Of these, it is only necessary to prevent the buffer portion from being arranged at the place where at least one buffer portion is located near the corner portion of the semiconductor substrate.

  According to the present invention, in CSP inspection, a highly reliable and small optical semiconductor device in which a semiconductor substrate is not broken by a load of an inspection probe, an optical semiconductor device that can easily recognize the direction of a package, and the same are used. The optical pickup device and the electronic device can be provided.

1 is a plan view showing a configuration of an optical semiconductor device according to a first embodiment of the present invention. It is II-II sectional drawing of FIG. It is sectional drawing which shows the structure of the other optical semiconductor device which concerns on the 1st Embodiment of this invention. It is a top view which shows the structure of the optical semiconductor device which concerns on the 2nd Embodiment of this invention. It is a top view which shows the structure of the optical semiconductor device which concerns on the 3rd Embodiment of this invention. It is a top view which shows the structure of the other optical semiconductor device which concerns on the 3rd Embodiment of this invention. It is a top view which shows the structure of the further another optical semiconductor device which concerns on the 3rd Embodiment of this invention. It is a top view which shows the structure of the further another optical semiconductor device which concerns on the 3rd Embodiment of this invention. It is a top view which shows the structure of the optical semiconductor device which concerns on the 4th Embodiment of this invention. It is XX sectional drawing of FIG. It is a figure which shows the structure of the optical pick-up apparatus which concerns on the 5th Embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

<< First Embodiment >>
FIG. 1 is a plan view showing an optical semiconductor device according to the first embodiment of the present invention. FIG. 2 is a cross-sectional view showing the optical semiconductor device according to the first embodiment and an inspection probe used when inspecting the optical semiconductor device. As shown in FIGS. 1 and 2, the optical semiconductor device 100 includes a semiconductor substrate 101, a protective glass plate (light transmissive member) 102, an adhesive layer 103 as a sealing portion, and a reinforcement as a buffer portion. It comprises an adhesive layer 104 for use and a bump 106 as an electrode terminal. The semiconductor substrate 101 is made of, for example, silicon and has a thickness of about 100 μm.

  A light receiving region 107 and a signal processing circuit 108 are formed on the surface (first main surface) of the semiconductor substrate 101, and a plurality of light receiving elements 107 a that receive an optical signal and generate a photocurrent are included in the light receiving region 107. Is placed inside. The semiconductor substrate 101 and the glass plate 102 are bonded by the adhesive layer 103 at the periphery of the semiconductor substrate 101, and a hollow region 105 is formed in a portion surrounded by the semiconductor substrate 101, the glass plate 102, and the adhesive layer 103. Has been.

  When the adhesive layer 103 is adhered on the light receiving region 107, the light transmittance is reduced due to the optical characteristics of the adhesive layer 103, or when the blue-violet laser light having a wavelength of about 405 nm is irradiated, the physical properties of the adhesive layer 103 are particularly improved. It is not desirable to form the adhesive layer 103 on the light receiving region 107 because it changes and causes discoloration or deformation. In addition, when the adhesive layer 103 is bonded onto the signal processing circuit 108, the resistance and capacitance values as passive elements shift due to the stress caused by the hardening of the adhesive layer 103, and the characteristics of transistors and diodes as active elements shift. Therefore, it is not desirable to form the adhesive layer 103 also on the signal processing circuit 108. Therefore, in order to prevent these characteristic deteriorations, the adhesive layer 103 is not adhered on the light receiving region 107 and the signal processing circuit 108, and the hollow region 105 is formed.

  Further, a reinforcing adhesive layer 104 is formed in the hollow region 105 at a position corresponding to each of the bumps 106 arranged at equal intervals. The bonding area of the reinforcing adhesive layer 104 to the semiconductor substrate 101 is as follows. Larger than the bonding area with the semiconductor substrate 101. That is, when the position of the bump 106 arranged on the back surface (other main surface) of the semiconductor substrate 101 is within the range of the hollow region 105 on the surface of the semiconductor substrate 101, the semiconductor substrate 101 at the same position as the position of the bump 106. A reinforcing adhesive layer 104 is formed on the surface. However, it is desirable not to arrange the bump 106a immediately below the light receiving region 107.

  When inspecting the optical semiconductor device 100 having the CSP structure including the hollow region 105, the inspection probe 200 is pressed against the bump 106 disposed on the back surface of the optical semiconductor device 100, and the electrical connection between the bump 106 and the inspection probe 200 is performed. In order to make a proper contact, the load of the inspection probe 200 (for example, 50 g per probe) is applied to the bump 106.

  In FIG. 1, since there are eight bumps 106 in the hollow region 105, a total load of 50 g × 8 = 400 g is applied to the semiconductor substrate 101 in the hollow region 105. If the hollow region 105 to which a load of 400 g is applied is supported only by the adhesive layer 103 formed in the peripheral portion of the semiconductor substrate 101, the semiconductor substrate 101 is cracked due to insufficient strength, or in the worst case. Destroy. In order to prevent breakage of the inspection probe 200 due to the load, a reinforcing adhesive layer 104 for supporting the semiconductor substrate 101 is formed immediately above the eight bumps 106.

  With this reinforcing adhesive layer 104, the semiconductor substrate 101 can be strong enough to withstand the load of the inspection probe 200. Further, even when the position of the reinforcing adhesive layer 104 is displaced from the position directly above the bump 106 due to the mask misalignment, the size of the reinforcing adhesive layer 104 is sufficient to ensure the strength of the semiconductor substrate 101. It is desirable to set it larger than the size of the bump 106.

  In addition, according to the first embodiment, since the reinforcing adhesive layer 104 is provided, there is no problem in the adhesive strength between the semiconductor substrate 101 and the glass plate 102 even if the area of the adhesive layer 103 is reduced. Therefore, the chip size can be reduced.

  In the first embodiment, the adhesive layer 103 and the reinforcing adhesive layer 104 are used for the sealing part and the buffer part, respectively. However, as shown in the optical semiconductor device 140 of FIG. The same effect can be obtained by using, as the portion 104, a structure having, for example, an insulating ceramic as a support and upper and lower adhesive layers. However, it is preferable that the sealing part 103 and the buffer part 104 can be formed by the same manufacturing process. This is because the process can be simplified and the cost can be reduced.

  Further, the bump 106 protruding from the substrate has been described as the CSP back surface terminal. However, even in the case of a mere flat terminal, the same effect can be obtained from the viewpoint of preventing the substrate destruction in the probe inspection.

<< Second Embodiment >>
FIG. 4 is a plan view showing an optical semiconductor device 150 according to the second embodiment of the present invention. Compared to the first embodiment, the arrangement of the buffer section and the arrangement of the signal processing circuit 108 associated therewith are different. Furthermore, in the second embodiment, a metal layer formed by plating or vapor deposition on the substrate is used as the buffer portion. The thickness of the metal layer is not more than the thickness of the adhesive layer used for the sealing portion. The purpose of installing the buffer section is to disperse the load of the inspection probe as described above, so it is not necessary to adhere to the glass plate facing the semiconductor substrate, and the deformation of the semiconductor substrate caused by the load is suppressed. If it is, there is no problem.

  The gold-plated layer 109, which is a metal layer, is positioned 4 on the diagonal line indicated by the auxiliary line 110 in the hollow region 105 at the same radial distance from the center of the hollow region 105 at a position where the total load of the inspection probe is evenly distributed. The place is formed.

  In addition, although the buffer part was demonstrated as the gold plating layer 109, if the deformation | transformation of the semiconductor substrate generate | occur | produced with a load is suppressed, it will not be limited to the gold plating layer 109, and what kind of material may be sufficient as it. For example, the object of the present invention can be achieved even with a ceramic or glass plate.

  In addition, with this configuration, the gold plating layer 109 can be disposed regardless of the number and position of the bumps 106, and the area of the signal processing circuit 108 can be used effectively. It is possible to reduce the size, and further to further reduce the package size. Moreover, since the buffer part does not contain the adhesive which is an organic material, the inside of a package with respect to the blue-violet laser beam for BD can be suppressed.

  In the above description, passive elements and active elements are not arranged in the installation region of the sealing part and the buffer part on the semiconductor substrate 101. However, an element whose characteristics do not shift with respect to stress due to the device layout. In addition, it goes without saying that elements and aluminum wiring that do not affect the overall characteristics of the optical semiconductor device 150 even if the characteristics are shifted may be arranged in the installation region of the sealing portion and the buffer portion.

  Further, the buffer portion (gold plating layer 109) may be disposed at any position in the hollow region 105 as long as the semiconductor substrate 101 is not destroyed by the load of the inspection probe 200. Furthermore, the buffer portion may be disposed at a position in contact with the sealing portion or at a position where a part thereof overlaps.

<< Third Embodiment >>
5, 6, 7 and 8 are plan views showing an optical semiconductor device according to the third embodiment of the present invention. Compared to the first embodiment, the shape of some buffer parts or some sealing parts is different.

  The buffer unit 104a shown in the optical semiconductor device 160 of FIG. 5 is smaller in size than the other buffer units 104, and is quadrangular while the other buffer units 104 are circular. Further, the buffer 104b shown in the optical semiconductor device 170 of FIG. 6 excludes the buffer itself. Since these two buffer portions are different in shape and arrangement from the other buffer portions 104, the positions of the optical semiconductor devices 160 and 170 can be easily recognized when viewed from the surface. By disposing the buffer portions 104a and 104b near the number terminals, the package direction of the optical semiconductor devices 160 and 170 can be easily recognized.

  Further, since the sealing portion 103a of the optical semiconductor device 180 shown in FIG. 7 has a different shape from the other three corner portions of the sealing portion 103, the optical semiconductor is similar to the arrangement of the buffer portion. When the device 180 is viewed from the surface, the position can be easily recognized. For example, the package portion of the optical semiconductor device 180 can be easily recognized by arranging the sealing portion 103a near the first terminal. The effect of becoming.

  Furthermore, as shown in FIG. 8, the mark 300 is formed in a position sandwiched between the semiconductor substrate and the glass plate by putting the mark 300 in the sealing portion 103 with a laser marker or the like. The mark is not thinned or peeled off, the mark is always clearly visible, and when the optical semiconductor device 190 is viewed from the surface at the mark position, the package direction of the optical semiconductor device 190 can be easily recognized. Play. Further, by forming the mark 300 by combining figures, letters, and numbers, it is possible to form an identification number for each optical semiconductor device, and for example, individual information such as product model number and date of manufacture can be individually formed. There is an effect.

<< Fourth Embodiment >>
9 and 10 are views showing an optical semiconductor device according to the fourth embodiment of the present invention. The difference from the first embodiment is that an elastic body portion is arranged on the surface of the optical semiconductor device instead of the buffer portion.

  For example, since an image sensor or the like has a wide light receiving area, it is not possible to arrange a buffer portion in the hollow area as in the first embodiment. In this case, it is necessary to provide an impact absorbing portion in place of the buffer portion in the optical semiconductor device.

  As shown in FIGS. 9 and 10, the optical semiconductor device 350 includes a semiconductor substrate 101, a glass plate (light transmissive member) 102, an adhesive layer 103 as a sealing portion, and a rubber-like shape as an impact absorbing portion. It is composed of an elastic body portion 351 and bumps 106 as electrode terminals.

  A light receiving region 107 and a signal processing circuit 108 are formed on the surface (first main surface) of the semiconductor substrate 101, and a plurality of light receiving elements 107 a that receive an optical signal and generate a photocurrent are included in the light receiving region 107. Is placed inside. The semiconductor substrate 101 and the glass plate 102 are bonded by the adhesive layer 103 at the periphery of the semiconductor substrate 101, and a hollow region 105 is formed in a portion surrounded by the semiconductor substrate 101, the glass plate 102, and the adhesive layer 103. Has been.

  When the adhesive layer 103 is adhered on the light receiving region 107, the light transmittance is reduced due to the optical characteristics of the adhesive layer 103, or when the blue-violet laser light having a wavelength of about 405 nm is irradiated, the physical properties of the adhesive layer 103 are particularly improved. It is not desirable to form the adhesive layer 103 on the light receiving region 107 because it changes and causes discoloration or deformation. In addition, when the adhesive layer 103 is bonded onto the signal processing circuit 108, the resistance and capacitance values as passive elements shift due to the stress caused by the hardening of the adhesive layer 103, and the characteristics of transistors and diodes as active elements shift. Therefore, it is not desirable to form the adhesive layer 103 also on the signal processing circuit 108. Therefore, in order to prevent these characteristic deteriorations, the adhesive layer 103 is not adhered on the light receiving region 107 and the signal processing circuit 108, and the hollow region 105 is formed.

  On the surface of the glass plate 102, an elastic body portion 351 having an opening 352 is disposed above the light receiving region 107 at substantially the same position as the light receiving region 107. The opening 352 is provided above the light receiving region 107 when the light transmittance is reduced by the optical characteristics of the elastic body 351 as in the case of the adhesive layer or when a blue-violet laser beam having a wavelength of about 405 nm is irradiated. In particular, it is not desirable to form the elastic body portion 351 on the light receiving region 107 because the physical properties of the elastic body portion 351 change and cause discoloration or deformation.

  When inspecting the optical semiconductor device 350 having the CSP structure including the hollow region 105, the inspection probe 200 is pressed against the bump 106 disposed on the back surface of the optical semiconductor device 350, and the electrical connection between the bump 106 and the inspection probe 200 is performed. In order to make a proper contact, the load of the inspection probe 200 (for example, 50 g per probe) is applied to the bump 106.

  In FIG. 9, since there are eight bumps 106 in the hollow region 105, a total load of 50 g × 8 = 400 g is applied to the semiconductor substrate 101 in the hollow region 105. If the hollow region 105 to which a load of 400 g is applied is supported only by the adhesive layer 103 formed in the peripheral portion of the semiconductor substrate 101, the semiconductor substrate 101 is cracked due to insufficient strength, or in the worst case. Destroy. In order to prevent breakage of the inspection probe 200 due to the load, a rubber-like elastic body portion 351 is disposed on the surface of the glass plate 102, and the load of the inspection probe 200 is alleviated throughout the optical semiconductor device 350. In other words, the rubber-like elastic body portion 351 can give the semiconductor substrate 101 strength that can withstand the load of the inspection probe 200.

  In addition, since the surface of the glass plate 102 is exposed at the position of the elastic body opening 352, there is a possibility that the surface of the glass plate 102 may be scratched by foreign matter such as dust. 50 μm or more thicker than the dust size (several tens of μm) attached during the manufacturing process is desirable. If the thickness of the elastic body portion 351 is 50 μm or more, even if dust adheres to the surface of the glass plate 102 in the elastic body opening 352, the surface of the optical semiconductor device 350 is in contact with the manufacturing apparatus, tray, etc. There will be no scratches.

  The elastic body opening 352 is desirably formed immediately before dicing the optical semiconductor device 350 into individual pieces. That is, after the semiconductor substrate 101 and the glass plate 102 are bonded together, an elastic material is applied to the surface of the glass plate 102, and in this state, through electrodes (not shown) to bump formation are performed, and finally dicing is performed. Since the elastic body opening 352 is formed by performing masking and exposure before performing the process, the elastic body opening 352 is protected since the glass plate surface is protected by the elastic material during the period from application of the elastic body material to bump formation. This is because it is possible to prevent dust and the like from adhering to the glass plate surface, and dust attached to other parts in the cleaning step after the formation of the elastic body opening 352 is also cleaned.

  The surface of the elastic body portion 351 is preferably roughened. When the optical semiconductor device 350 is incorporated in a set, when the optical semiconductor device 350 is further covered with a holder, the surface of the optical semiconductor device 350 (the surface of the elastic body portion 351) and the holder are bonded with an adhesive. The rough surface of 350 is more adhesive than the mirror surface.

  Further, since the elastic body portion 351 is disposed in a portion other than the surface of the glass plate 102 corresponding to the light receiving region 107, the elastic body portion 351 also has a function as a light shielding film. Irradiation to portions other than 107 can be prevented, and malfunction of the circuit due to unnecessary light, in particular, physical properties of the adhesive layer 103 can be prevented from being changed and discolored or deformed can be prevented. In this case, it is desirable to mix in advance a color such as pigment that does not easily transmit light into the elastic material.

  Further, since the elastic body corner portion 351a shown in FIG. 9 has a different shape from the other three corner portions of the elastic body portion 351, it is the same as the arrangement of the sealing portion in the third embodiment. When the optical semiconductor device 350 is viewed from the surface, the position can be easily recognized. For example, the elastic body corner portion 351a is disposed near the first terminal, so that the package direction of the optical semiconductor device 350 is achieved. Has the effect of making it easier to recognize.

  Further, by placing the mark 400 in the elastic body portion 351 with a laser marker or the like, it is possible to easily recognize the package direction of the optical semiconductor device 350 when the optical semiconductor device 350 is viewed from the surface at the mark position. Furthermore, by forming the mark 400 by combining figures, letters, and numbers, an identification number can be formed on each optical semiconductor device, and individual information such as a product model number and a manufacturing date can be individually formed. There is an effect.

  The bump 106 protruding from the substrate has been described as the CSP back surface terminal. However, even in the case of a simple flat terminal, the same effect can be obtained from the viewpoint of preventing the substrate from being destroyed in the probe inspection.

<< Fifth Embodiment >>
FIG. 11 is a diagram showing a configuration of an optical pickup device according to the fifth embodiment of the present invention. As shown in FIG. 11, the optical pickup device 50 is a device that reads information from a DVD and CD optical disk medium 58 and writes information to the optical disk medium 58 using laser light.

  The optical pickup device 50 includes an infrared laser element 51 as a light source used for a CD, a red laser element 52 as a light source used for a DVD, a three-beam grating 53, a beam splitter 54a, and a beam splitter 54b. , A collimator lens 55, a mirror 56, objective lenses 57a and 57b, and a light receiving IC 59.

  In the optical pickup device 50, when the optical disk medium 58 is a CD, the laser light emitted from the infrared laser element 51 is divided into three beams by the three-beam grating 53, and then the beam splitter 54a and the collimator lens 55. And sequentially passes through the beam splitter 54b, is reflected by the mirror 56, and enters the objective lens 57a. Thereafter, the light collected by the objective lens 57a is incident on the optical disk medium 58 (CD) and then reflected, and the reflected light returns sequentially through the objective lens 57a, the mirror 56, and the beam splitter 54b. The direction of the reflected light from the optical disk medium 58 is bent by the beam splitter 54b, and is irradiated onto the light receiving surface of the light receiving IC 59 through the objective lens 57b. The light receiving IC 59 outputs information on the optical disk medium 58 as an electrical signal.

  Here, the light receiving IC 59 is an IC in which a light receiving element having a light receiving portion (not shown) and a signal processing circuit for amplifying a photocurrent generated in the light receiving element are formed on the same silicon substrate. This is the optical semiconductor device described in the embodiment.

  The reflected light from the optical disk medium 58 includes pit information on the surface of the optical disk medium 58, and the information signal of the optical disk medium 58 and the focus error signal are calculated by processing the photocurrent generated by the light receiving element. In addition, a tracking error signal or the like is obtained. These signals are used for reading information from the optical disk medium 58, controlling the position of the optical pickup device 50, and the like.

  Therefore, the optical semiconductor device according to the first to fourth embodiments can make the optical pickup device 50 highly reliable and downsized.

  In the optical pickup device 50, when the optical disk medium 58 is a DVD, the laser light emitted from the red laser element 52 sequentially passes through the beam splitter 54a, the collimator lens 55, and the beam splitter 54b, and is reflected by the mirror 56. Is incident on the objective lens 57a. Thereafter, the light condensed by the objective lens 57a is incident on the optical disk medium 58 (DVD) and then reflected, and the reflected light returns sequentially through the objective lens 57a, the mirror 56, and the beam splitter 54b. The direction of the reflected light from the optical disk medium 58 is bent by the beam splitter 54b, and is irradiated onto the light receiving surface of the light receiving IC 59 through the objective lens 57b. The light receiving IC 59 outputs information on the optical disk medium 58 as an electrical signal.

  The point that an electric signal resulting from the reflected light from the optical disk medium 58 is used for reading information on the optical disk medium 58, position control of the optical pickup device 50, etc. is the same as in the case of the CD. In this case, the laser beam is divided into three beams, whereas when the optical disk medium 58 is a DVD, the beam is one beam. Therefore, the reflected light from the CD and the reflected light from the DVD are the light receiving unit. Different positions on the top are illuminated. Therefore, in the light receiving IC 59, the light receiving unit used for obtaining information from the CD and the light receiving unit used for obtaining information from the DVD are partially different.

  In the optical pickup device 50, the laser light emitted from the infrared laser element 51 and the laser light emitted from the red laser element 52 are respectively an optical path from the beam splitter 54a to the optical disk medium 58, and an IC 59 for receiving light from the optical disk medium 58. Is adjusted so that the optical axes are substantially the same. Therefore, the same optical element and the same optical system can be used regardless of whether the optical disk medium 58 is a CD or a DVD, and the optical pickup device 50 can be easily downsized and adjusted during assembly.

  As described above, according to the optical pickup device 50 of the fifth embodiment, the optical semiconductor devices of the first to fourth embodiments are used. Therefore, a highly reliable and small optical pickup device can be realized.

  In the optical pickup device 50, the structure of the laser light, the light receiving IC, etc., the arrangement relationship of each component, and the like may be appropriately changed according to the design.

  As mentioned above, although the optical pick-up apparatus using the optical semiconductor device of this invention was demonstrated based on embodiment, this invention is not limited to this embodiment. For example, the optical semiconductor device of the present invention is suitably used in various electronic devices other than the optical pickup device. Thereby, a highly reliable and small electronic device can be realized. The present invention includes various modifications made by those skilled in the art without departing from the scope of the present invention.

  Further, although the present invention has been described using a light transmissive member as an optical semiconductor device, when used as an interposer for stacking semiconductor substrates, the light transmissive member need not be a silicon substrate, a ceramic substrate, or a printed substrate. Even if it is a board | substrate, if it is in the range which does not deviate from the summary of this invention, it is contained in the scope of the present invention.

  INDUSTRIAL APPLICABILITY The present invention can be used for an optical semiconductor device, an optical pickup device using the optical semiconductor device, and an electronic apparatus. In particular, it can be used for an optical semiconductor device that reads information from an optical disk medium and an optical pickup device using the optical semiconductor device.

DESCRIPTION OF SYMBOLS 50 Optical pick-up apparatus 51 Infrared laser element 52 Red laser element 53 Three beam grating 54a, 54b Beam splitter 55 Collimator lens 56 Mirror 57a, 57b Objective lens 58 Optical disk medium 59 Light receiving IC
100, 140, 150, 160, 170, 180, 190, 350 Optical semiconductor device 101 Semiconductor substrate 102 Glass plate 103 Adhesive layer 103a Chip pattern 104, 104a, 104b of reinforcing part 105 Adhesive layer for reinforcement 105 Hollow region 106 Bump 106a Bump Chip position 107 light receiving area 107a light receiving element 108 signal processing circuit 109 gold plating layer 110 auxiliary line 200 inspection probe 300, 400 mark 351 elastic body part 352 elastic body opening part

Claims (17)

A semiconductor substrate having active elements formed on the first main surface;
A plurality of electrode terminals formed on the other main surface of the semiconductor substrate;
A light transmissive member provided on the first main surface at a distance so as to face the active element;
A sealing portion formed in a peripheral portion on the first main surface;
A hollow region formed between the active element on the first main surface, the light transmissive member, and the sealing portion;
Including at least one buffer portion formed in the hollow region,
The optical semiconductor device according to claim 1, wherein the buffer portion is not disposed at an arrangement position of at least one of the buffer portions near the corner portion of the semiconductor substrate. The optical semiconductor device according to claim 1,
An optical semiconductor device, wherein an active element and a passive element are not formed in an installation region of the buffer portion on the first main surface of the semiconductor substrate. The optical semiconductor device according to claim 1 or 2,
The said buffer part is arrange | positioned at equal intervals in the said hollow area | region, The optical semiconductor device characterized by the above-mentioned. In the optical semiconductor device according to any one of claims 1 to 3,
The buffer portion is formed at a position on the first main surface of the semiconductor substrate facing at least one or more electrode terminals disposed on the other main surface of the semiconductor substrate. Optical semiconductor device. The optical semiconductor device according to claim 4,
An optical semiconductor characterized in that an installation area of the buffer portion on the first main surface of the semiconductor substrate is larger than an area of the electrode terminal corresponding to each of the buffer portions in contact with the other main surface of the semiconductor substrate. apparatus. The optical semiconductor device according to any one of claims 1 to 5,
Among the active elements formed on the semiconductor substrate, at least one is a light receiving element that outputs a photocurrent according to the amount of incident light, and the position where the light receiving element is formed is interposed via the semiconductor substrate. An optical semiconductor device characterized in that no electrode terminal is formed immediately below. The optical semiconductor device according to any one of claims 1 to 6,
An active semiconductor device and a passive device are not formed in an installation region of the sealing portion on the first main surface of the semiconductor substrate. The optical semiconductor device according to any one of claims 1 to 7,
The optical semiconductor device, wherein the sealing portion is made of an adhesive layer. The optical semiconductor device according to any one of claims 1 to 7,
2. The optical semiconductor device according to claim 1, wherein the sealing portion has an adhesive layer on the upper and lower sides of the support. In the optical semiconductor device according to any one of claims 1 to 9,
An optical semiconductor device, wherein the buffer portion is made of an adhesive layer. In the optical semiconductor device according to any one of claims 1 to 9,
The said buffer part is the structure which has an adhesive layer on the upper and lower sides of a support body, The optical semiconductor device characterized by the above-mentioned. A semiconductor substrate having active elements formed on the first main surface;
A plurality of electrode terminals formed on the other main surface of the semiconductor substrate;
A light transmissive member provided on the first main surface at a distance so as to face the active element;
A sealing portion formed in a peripheral portion on the first main surface;
A hollow region formed between the active element on the first main surface, the light transmissive member, and the sealing portion;
Including at least one buffer portion formed in the hollow region,
An optical semiconductor device characterized in that a shape of at least one of the buffer portions near the corner portion of the semiconductor substrate is different from the shape of the other buffer portions. A semiconductor substrate having active elements formed on the first main surface;
A plurality of electrode terminals formed on the other main surface of the semiconductor substrate;
A light transmissive member provided on the first main surface at a distance so as to face the active element;
A sealing portion formed in a peripheral portion on the first main surface;
A hollow region formed between the active element on the first main surface, the light transmissive member, and the sealing portion;
Including at least one buffer portion formed in the hollow region,
In the sealing portion, the shape of at least one sealing portion near the corner portion of the semiconductor substrate is different from the shapes of the other sealing portions. A semiconductor substrate having active elements formed on the first main surface;
A plurality of electrode terminals formed on the other main surface of the semiconductor substrate;
A light transmissive member provided on the first main surface at a distance so as to face the active element;
A sealing portion formed in a peripheral portion on the first main surface;
A hollow region formed between the active element on the first main surface, the light transmissive member, and the sealing portion;
Including at least one buffer portion formed in the hollow region,
An optical semiconductor device, wherein a mark is formed on the sealing portion. The optical semiconductor device according to claim 14,
2. The optical semiconductor device according to claim 1, wherein the mark is a mark that is a combination of one or more of figures, characters, and numbers.   An optical pickup device comprising the optical semiconductor device according to claim 1.   An electronic apparatus comprising the optical semiconductor device according to claim 1.

Images