JP2011114595A - Connection structure of high frequency circuit and rectangular waveguide high frequency line - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a simple and inexpensive structure for connecting a high frequency circuit and a rectangular waveguide high frequency line. <P>SOLUTION: The connection structure of the high frequency circuit and the rectangular waveguide high frequency line 20 includes a first conductor 51 arranged such that one end is connected to the high frequency signal terminal 42 of the high frequency circuit and turned from the high frequency signal terminal 42 to a gap 61 between the upper side conductor layer 21 of the rectangular waveguide high frequency line 20 and a terminating conductor 32 and second conductors 52a, 52b arranged such that one end is connected to grounding terminals 43a, 43b and turned from the grounding terminals 43a, 43b to the gap 61. In the view from the thickness direction of a dielectric substrate 11, in order that a line segment connecting the other end of the first conductor 51 and the other end of the second conductors 52a, 52b crosses the gap 61, the first conductor 51 crosses the gap 61 and is connected to the upper side conductor layer 21 at the other end thereof, and the second conductors 52a, 52b are connected to the terminating conductor 32 at the other end thereof without crossing the gap 61. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a connection structure between a rectangular waveguide type high-frequency line frequently used in a high-frequency band such as millimeter waves and a high-frequency circuit, and more particularly to a connection structure using a conducting wire such as a bonding wire.

  In general, when a semiconductor element such as an MMIC is mounted on a circuit board, the semiconductor element and a signal line on the circuit board are connected using a conductive wire such as a bonding wire. A microstrip line is often used as a signal line on a circuit board.

  When a semiconductor element and a signal line on a circuit board are connected using a conducting wire, an inductance component mainly occurs due to the length of the conducting wire. This inductance component cannot be ignored in the high frequency region, and signal reflection occurs due to impedance mismatch. Radiation also occurs due to the lead wires leaving the ground conductor on the semiconductor element. These deteriorate the transmission characteristics.

  For this reason, it is necessary to shorten the length of the conducting wire as much as possible. In view of this, a method has been proposed in which a cavity is formed in a circuit board, the connection terminal surface of the semiconductor element is aligned with the upper surface of the circuit board, and the semiconductor element is arranged so that the length of the conducting wire is as short as possible.

  There is also a method of introducing a capacitance component in order to cancel the generated inductance component. For example, there is a technique for matching impedance by introducing a capacitance component by connecting a lead wire to a single-plate capacitor mounted on a circuit board or by forming a stub on a strip line of a circuit board to which the lead wire is connected. Proposed. In many cases, these two methods are used together (for example, refer to Patent Document 1).

JP 2007-95838 A

  However, the above prior art has the following problems.

  First, in the method of forming a cavity on a circuit board, there are problems that the strength of the circuit board is reduced by the cavity, and that the process is complicated due to the formation of the cavity and the cost is increased.

  In addition, the method of mounting a single plate capacitor has a problem that the cost increases and the variation in inductance due to the variation in the length of the conductor due to the mounting deviation of the semiconductor element cannot be corrected.

  Furthermore, in the method of forming a stub on a strip line, high dimensional accuracy is required for the shape and position of the stub for impedance matching, and there is a problem that the cost increases when a thin film substrate is used to satisfy this requirement. It was.

  The present invention has been devised in view of such problems in the prior art, and its purpose is to provide a simple and inexpensive structure for connecting a high-frequency circuit such as a semiconductor element and a rectangular waveguide type high-frequency line. Is to provide.

  The connection structure between the high-frequency circuit of the present invention and the rectangular waveguide type high-frequency line includes a dielectric substrate, an upper conductor layer disposed on the upper surface of the dielectric substrate, and a lower conductor disposed on the lower surface of the dielectric substrate. And two rows of through-wall side walls arranged to electrically connect the upper conductor layer and the lower conductor layer at a repetition interval less than ½ of the wavelength of the high-frequency signal in the propagation direction of the high-frequency signal A rectangular waveguide type high-frequency line that is configured by a conductor group, and that transmits the high-frequency signal by a region surrounded by the upper conductor layer, the lower conductor layer, and the two rows of through conductor groups for side walls; A dielectric substrate and the lower conductor layer are extended from one end of the rectangular waveguide type high-frequency line in the propagation direction of the high-frequency signal, and the upper conductor layer and the gap are formed on the upper surface of the extension. The extension is arranged A terminating conductor connected to the lower conductor layer of the extension through a terminating through conductor penetrating the dielectric substrate, and disposed on the opposite side of the upper conductor layer with the gap in between A high-frequency circuit having a high-frequency signal terminal for at least one of the input and output of the high-frequency signal, and a ground terminal disposed adjacent to the high-frequency signal terminal, and one end connected to the high-frequency signal terminal A first conductive wire disposed from the high-frequency signal terminal toward the gap; and a second conductive wire having one end connected to the ground terminal and disposed from the ground terminal toward the gap. The first conductive wire is arranged such that a segment connecting the other end of the first conductive wire and the other end of the second conductive wire crosses the gap when viewed from the thickness direction of the dielectric substrate. Across the gap With square end is connected to said upper conductor layer, said second conductor is characterized in that the other end is connected to the terminating conductors without crossing over the gap.

  Further, the connection structure between the high-frequency circuit of the present invention and the rectangular waveguide type high-frequency line is the above-described configuration, wherein the two ground terminals are arranged with a space therebetween, and the high-frequency circuit is interposed between the two ground terminals. Signal terminals are arranged, and the two second conductors having one end respectively connected to the two ground terminals are respectively directed to the gap from the two ground terminals on both sides of the first conductor. It is characterized by being arranged like this.

  In addition, in this specification, a conducting wire is a linear or strip-shaped conductor, and includes, for example, a ribbon wire. Also, when the conductor crosses over the gap, the conductor is disposed with a gap in the thickness direction (Z direction) of the dielectric substrate and when viewed from the thickness direction (Z direction) of the dielectric substrate. In addition, it means that the conductor crosses the gap. The propagation direction of the high-frequency signal is a direction that includes both the direction in which the high-frequency signal propagates and the opposite direction, and is a direction that substantially coincides with the direction in which the two through-wall through conductor groups extend.

  According to the connection structure of the high-frequency circuit of the present invention having the above-described configuration and the rectangular waveguide type high-frequency line, the first end is connected to the high-frequency signal terminal and arranged so as to go from the high-frequency signal terminal to the gap. And a second conductive wire having one end connected to the ground terminal and disposed so as to face the gap from the ground terminal, and when viewed from the thickness direction of the dielectric substrate, the other of the first conductive wires The first conductor is crossed over the gap and the other end is connected to the upper conductor layer so that the line connecting the end and the other end of the second conductor crosses the gap. Since the other end is connected to the terminating conductor without traversing the gap, the electric field from the high-frequency signal terminal to the ground terminal passes through the gap while passing over the first and second conductors. In a direction that is easy to couple with a rectangular waveguide type high-frequency line Because the converted, it is possible to satisfactorily connect the high frequency circuit and the rectangular waveguide-type transmission line.

  Further, according to the connection structure between the high-frequency circuit of the present invention having the above-described configuration and the rectangular waveguide type high-frequency line, the high-frequency signal terminal is disposed between the two ground terminals, and one end has two grounds. When the two second conductors respectively connected to the terminals are arranged to face the gap from the two ground terminals on both sides of the first conductor, the second conductors are arranged on both sides of the first conductor. Therefore, leakage of electromagnetic waves passing through the first and second conducting wires can be reduced.

It is a perspective view which shows typically the connection structure of the high frequency circuit of an example of embodiment of this invention, and a rectangular waveguide type high frequency line. FIG. 2 is a plan view schematically showing a connection structure between the high-frequency circuit shown in FIG. 1 and a rectangular waveguide type high-frequency line. It is a graph which shows the electrical property of the connection structure of the high frequency circuit of an example of embodiment of this invention, and a rectangular waveguide type high frequency line.

  Hereinafter, a connection structure between a high-frequency circuit of the present invention and a rectangular waveguide type high-frequency line will be described in detail with reference to the accompanying drawings.

(Example of embodiment)
FIG. 1 is a perspective view schematically showing a connection structure between a high-frequency circuit and a rectangular waveguide type high-frequency line as an example of the first embodiment of the present invention. FIG. 2 is a plan view schematically showing a connection structure between the high-frequency circuit shown in FIG. 1 and a rectangular waveguide type high-frequency line. FIG. 1 shows a state in which the dielectric substrate 11 is seen through in order to make the structure easy to understand.

  As shown in FIGS. 1 and 2, the connection structure between the high-frequency circuit of this example and the rectangular waveguide type high-frequency line is a dielectric substrate 11, an upper conductor layer 21, a lower conductor layer 22, and a through-hole conductor group for side walls. A rectangular waveguide type high-frequency line 20 constituted by 23a, 23b, an extension 63 constituted by the dielectric substrate 11 and the lower conductor layer 22, termination through conductors 31a, 31b, 31c, and termination conductors 32, a semiconductor element 41 incorporating a high-frequency circuit having a high-frequency signal terminal 42 and ground terminals 43a and 43b, a first conductive wire 51, and second conductive wires 52a and 52b.

  The dielectric substrate 11 is composed of one or a plurality of dielectric layers. The upper conductor layer 21 is disposed on the upper surface of the dielectric substrate 11 and functions as the upper tube wall of the rectangular waveguide type high-frequency line 20. The lower conductor layer 22 is disposed on the lower surface of the dielectric substrate 11 and functions as a lower tube wall of the rectangular waveguide type high-frequency line 20. The two rows of through-hole conductor groups 23a and 23b electrically connect the upper conductor layer 21 and the lower conductor layer 22 with a repetition interval of less than half the wavelength of the high-frequency signal in the high-frequency signal propagation direction (X direction). Are connected so as to function as two side walls of the rectangular waveguide type high-frequency line 20. As described above, the rectangular waveguide type high-frequency line 20 includes the dielectric substrate 11, the upper conductor layer 21, the lower conductor layer 22, and the side wall through conductor groups 23a and 23b. A high frequency signal is transmitted by a region surrounded by the side conductor layer 22 and the two side wall through conductor groups 23a and 23b. In addition, the extension part 63 is provided with the dielectric substrate 11 and the lower conductor layer 22 that are extended in the high-frequency signal propagation direction from one end of the high-frequency signal propagation direction (X direction) of the rectangular waveguide type high-frequency line 20. It is constituted by. That is, in the extension 63, the lower conductor layer 22 is disposed on the lower surface of the dielectric substrate 11, but the upper conductor layer 21 is not disposed on the upper surface of the dielectric substrate 11. That is, the extension 63 of the dielectric substrate 11 and the lower conductor layer 22 is a non-formation region of the upper conductor layer 21 where the upper conductor layer 21 is not formed on the upper surface of the dielectric substrate 11.

  The terminating conductor 32 has a rectangular shape, and is disposed on the upper surface of the dielectric substrate 11 of the extension 63 with a gap 61 between the upper conductor layer 21. The terminating conductor 32 is connected to the lower conductor layer 22 of the extending portion 63 through terminating through conductors 31a, 31b, and 31c that penetrate the dielectric substrate 11 of the extending portion 63. The semiconductor element 41 incorporates a high frequency circuit having a high frequency signal terminal 42 and ground terminals 43a and 43b. The semiconductor element 41 is disposed on the terminal conductor 32 side with respect to the gap 61, and is mounted on the pad electrode 45 disposed on the upper surface of the dielectric substrate 11 of the extension 63. The high frequency signal terminal 42 is disposed on the upper surface of the semiconductor element 41 and is used for at least one of input and output of a high frequency signal. The ground terminals 43a and 43b are arranged adjacent to both sides of the high frequency signal terminal 42 so as to sandwich the high frequency signal terminal 42 therebetween. That is, the high frequency signal terminal 42 is disposed between the two ground terminals 43a and 43b.

  The first conducting wire 51 has one end connected to the high frequency signal terminal 42 and is disposed so as to go from the high frequency signal terminal 42 to the gap 61. The second conductors 52a and 52b have one ends connected to the ground terminals 43a and 43b, respectively, and are arranged on both sides of the first conductor 51 so as to face the gap 61 from the two ground terminals 43a and 43b. . The first conductor 51 crosses the gap 61 and the other end is connected to the upper conductor layer 21. The second conductors 52a and 52b do not cross the gap 61 and the other end is for termination. A line segment connected to the conductor 32 and connecting the other end of the first conductor 51 and the other ends of the second conductors 52a and 52b crosses the gap 61 when viewed from the thickness direction of the dielectric substrate 11. Thus, the first conductor 51 and the second conductors 52a and 52b are arranged.

  According to the connection structure between the high-frequency circuit of this example having such a configuration and the rectangular waveguide type high-frequency line, when viewed from the thickness direction (Z direction) of the dielectric substrate 11, The first conductor 51 crosses the gap 61 and the other end is connected to the upper conductor layer 21 so that a line segment connecting the other end and the other ends of the second conductors 52a and 52b crosses the gap 61. In addition, the second conductors 52a and 52b are connected to the terminating conductor 32 without traversing the gap 61, so that the electric field from the high-frequency signal terminal 42 to the ground terminals 43a and 43b is the first. The electric field from the first conductive wire 51 to the second conductive wires 52a and 52b becomes an electric field, and is easily coupled to the rectangular waveguide type high-frequency line 20 through the gap 61 while passing over the first and second conductive wires 52a and 52b. It is gradually converted in the direction. Thereby, the high frequency circuit and the rectangular waveguide type high frequency line 20 can be connected well. Therefore, the high frequency signal from the high frequency circuit mounted on the semiconductor element 41 is satisfactorily transmitted to the rectangular waveguide type high frequency line 20, and the high frequency signal propagated through the rectangular waveguide type high frequency line 20 is transmitted to the semiconductor element 41. Can be satisfactorily transmitted to the high-frequency circuit mounted on the.

  Further, according to the connection structure of the high-frequency circuit and the rectangular waveguide type high-frequency line of this example, the first conductive wire 51 and the second conductive wires 52a and 52b connected to the ground terminals 43a and 43b are paired. Therefore, even if the lengths of the first conductive wire 51 and the second conductive wires 52a and 52b are increased, an increase in inductance component can be suppressed and leakage of electromagnetic waves can be suppressed. it can. This eliminates the need for forcibly shortening the lengths of the first conducting wire 51 and the second conducting wires 52a and 52b, so that a cavity is unnecessary and a matching circuit such as a stub is also unnecessary. Therefore, a connection structure between the simple and inexpensive high-frequency circuit and the rectangular waveguide high-frequency line 20 can be obtained.

  Furthermore, according to the connection structure between the high-frequency circuit of this example and the rectangular waveguide type high-frequency line, the second conductive wires 52a and 52b connected to the ground terminals 43a and 43b are provided on both sides of the first conductive wire 51, respectively. Since it is arranged to face the gap 61, a structure similar to a coplanar line in which the second conductors 52a and 52b are located on both sides of the first conductor 51 in the air can be realized. Thereby, the influence of the leakage of the high frequency signal which passes the 1st conducting wire 51, and the electromagnetic field noise from the outside can further be reduced.

  In the connection structure between the high frequency circuit of this example and the rectangular waveguide type high frequency line, the terminating through conductors 31a, 31b, 31c are one of the high frequency signal propagation directions (X direction) of the rectangular waveguide type high frequency line 20. It is presumed to have a function similar to the tube wall in Therefore, it is desirable that the interval between the terminating through conductors 31a, 31b, and 31c adjacent to each other is less than ½ of the wavelength of the high-frequency signal, and more desirably less than ¼. Further, the terminating through conductors 31a, 31b, and 31c are arranged in the central portion in the width direction of the rectangular waveguide type high frequency line 20 over a length of about 1/4 or more of the wavelength of the high frequency signal. Desirably, it should be arranged over a length of ½ or more of the wavelength of the high-frequency signal. In addition, since the degree of connection between the high-frequency circuit and the rectangular waveguide type high-frequency line 20 varies depending on the interval of the gap 61, the interval of the gap 61 depends on the connection state between the high-frequency circuit and the rectangular waveguide type high-frequency line 20. It is set accordingly.

  In the connection structure between the high-frequency circuit of this example and the rectangular waveguide type high-frequency line, the first conducting wire 51 and the second conducting wires 52a and 52b are made of metal wires such as gold and aluminum, for example, 0.01 mm to The thickness is set to about 0.05 mm and can be easily formed using, for example, a wire bonder. Further, the length of the first conducting wire 31 is preferably about ½ of the signal wavelength. The relative dielectric constant of the dielectric substrate 11 is, for example, about 2 to 20. The material of the dielectric substrate 11 is not particularly limited as long as it has a characteristic that does not hinder the transmission of high-frequency signals, and it is possible to use a resin such as glass epoxy, but a rectangular waveguide type It is desirable to use dielectric ceramics from the viewpoint of accuracy in forming the high-frequency line 20 and ease of manufacture. The upper conductor layer 21, the lower conductor layer 22, the terminating conductor 32, and the pad electrode 45 are made of a highly conductive metal, and have a thickness of about 3 μm to 50 μm, for example. The repetition interval between the side wall through conductor groups 23a and 23b needs to be less than ½ of the wavelength of the high frequency signal transmitted through the rectangular waveguide type high frequency line 20 from the viewpoint of preventing leakage of the high frequency signal. , Preferably less than ¼. Via holes and through holes can be used as the side wall through conductor groups 23a, 23b and the termination through conductors 31a, 31b, 31c, and the diameter thereof is, for example, about 0.05 mm to 0.5 mm.

  Regarding the rectangular waveguide type high frequency line 20, the terminating conductor 32, the terminating through conductors 31a, 31b, 31c and the pad electrode 45 in the connection structure of the high frequency circuit of this example and the rectangular waveguide type high frequency line 20, For example, it can be produced as follows. First, using a slurry obtained by adding and mixing a suitable organic solvent and solvent to a ceramic raw material powder mainly composed of glass, alumina, aluminum nitride, etc., a ceramic green sheet is formed by a doctor blade method or a calender roll method. Make it. Next, through holes for forming the through-hole conductor groups 23a, 23b and the terminating through-conductors 31a, 31b, 31c are formed on the obtained ceramic green sheet using a punching machine or the like, and suitable for the metal powder. Ceramic green with conductor paste by adding oxide, organic solvent, etc. such as alumina, silica, magnesia, etc. into a paste and filling it into the through hole by thick film printing method and applying it to the surface of the ceramic green sheet A sheet is produced. Next, the obtained ceramic green sheets with a conductive paste are laminated and pressed using a hot press apparatus to form a laminate. And when the dielectric layer is made of glass ceramics, the obtained laminate is about 850 ° C. to 1000 ° C., alumina ceramics is about 1500 ° C. to 1700 ° C., and aluminum nitride ceramics is about 1600 ° C. to 1900 ° C. It is produced by firing at a peak temperature of about. The metal powder is preferably copper, gold or silver when the dielectric layer is glass ceramic, and tungsten or molybdenum when the dielectric layer is alumina ceramic or aluminum nitride ceramic.

(Modification)
The present invention is not limited to the embodiments described above, and various modifications and improvements can be made without departing from the spirit of the present invention.

  For example, in the example of the embodiment described above, an example in which the first conducting wire 51 crosses the vicinity of the central portion in the length direction of the gap 61 so as to be orthogonal to the length direction of the gap 61 is shown. It is possible to cross the central portion other than the central portion of the gap 61 or to cross the gap 61 obliquely. In the example of the embodiment described above, the case where the length direction of the gap 61 is orthogonal to the length direction of the rectangular waveguide type high-frequency line 20 is shown. However, the length direction of the gap 61 is a rectangular waveguide. It may be inclined with respect to the length direction of the tubular high-frequency line 20. However, the central portion in the width direction of the rectangular waveguide type high-frequency line 20 and the center portion in the length direction of the gap 61 are arranged in the width direction of the rectangular waveguide type high-frequency line 20 and the length direction of the gap 61. Crossing so as to be orthogonal is desirable in order to improve the connection between the high-frequency circuit and the rectangular waveguide type high-frequency line 20.

  In the example of the embodiment described above, the example in which the two second conductive wires 52a and 52b are arranged so as to sandwich the first conductive wire 51 is shown. However, the number of the second conductive wires may be one. Also, three or more may be used.

  Furthermore, in the example of the above-described embodiment, the example in which the second conducting wires 52a and 52b are arranged in parallel to the first conducting wire 51 is shown, but the present invention is not limited to this. For example, the distance between the first conductor 51 and the second conductors 52a and 52b may be gradually increased or may be gradually decreased. By making the interval between the other ends of the second conducting wires 52a, 52b smaller than the interval between the one ends of the second conducting wires 52a, 52b, the other end of the first conducting wire 51 and the second conducting wires 52a, 52b. Since the component orthogonal to the length direction of the gap 61 of the electric field between the other end of the first and second ends increases, the connection between the high-frequency circuit and the rectangular waveguide type high-frequency line 20 can be improved.

  Furthermore, in the example of the embodiment described above, an example in which the gap 61 is formed in a band shape is shown, but the present invention is not limited to this. For example, the central portion of the upper conductor layer 21 facing the termination conductor 32 may be shaped to protrude toward the termination conductor 32 (−X direction).

  Furthermore, in the example of the embodiment described above, the example in which the extension 63 is formed up to the region where the semiconductor element 41 is disposed is shown, but the present invention is not limited to this. The extension 63 only needs to exist up to a region where the terminating through conductors 31a, 31b, 31c and the terminating conductor 32 are disposed.

  Furthermore, in the above-described example of the embodiment, the example in which the high-frequency circuit is built in the semiconductor element 41 is shown, but the present invention is not limited to this. For example, the high-frequency circuit may be formed by an upper surface of the dielectric substrate 11 of the extension 63 or a wiring conductor formed inside and an electronic component mounted on the upper surface of the dielectric substrate 11.

  Furthermore, in the example of the above-described embodiment, the example in which the three termination through conductors 31a, 31b, and 31c are arranged is shown, but the present invention is not limited to this. There may be two, or four or more. Further, it may be a single terminating through conductor having a shape that extends long in the direction (Y direction) orthogonal to the high-frequency signal propagation direction of the rectangular waveguide type high-frequency line 20.

  Next, a specific example of the connection structure between the high frequency circuit of the present invention and the rectangular waveguide type high frequency line will be described.

  The electrical characteristics of the connection structure between the high-frequency circuit shown in FIGS. 1 and 2 and the rectangular waveguide type high-frequency line were simulated. In the simulation, the dielectric substrate 11 had a relative dielectric constant of 9.87, a dielectric loss tangent of 0.003, and a thickness of 0.15 mm. The side wall through conductor groups 23a and 23b and the termination through conductors 31a, 31b and 31c were via holes having a diameter of 0.1 mm. The arrangement pitch of the through conductors of the side wall through conductor groups 23a and 23b was set to 0.3 mm at the interval between the centers of the adjacent through conductors. The distance between the side wall through conductor group 23a and the side wall through conductor group 23b was set to 1.2 mm at the distance between the centers of the through conductors. The terminating conductor 32 was rectangular with a width of 0.3 mm and a length of 0.5 mm. The gap 61 between the terminating conductor 32 and the upper conductor layer 21 was rectangular with a length of 0.5 mm and a width of 0.13 mm. The horizontal distance from the high frequency signal terminal 42 to the other end of the first conducting wire 51 was about 1.3 mm, and the height from the upper surface of the dielectric substrate 11 to the upper end of the first conducting wire 51 was about 0.46 mm.

  The high-frequency signal terminal 42 of the high-frequency circuit incorporated in the semiconductor element 41 is port 1 and the opposite side to the extension 63 of the rectangular waveguide type high-frequency line 20 is port 2, and its transmission characteristics (S21) and reflection characteristics ( S11, S22) were obtained. FIG. 3 is a graph showing the results, where the horizontal axis represents frequency and the vertical axis represents attenuation. According to the graph shown in FIG. 3, it can be seen that excellent connection characteristics in which S11 and S22 exceed -10 dB are obtained in a wide frequency range of about 75 GHz to 82 GHz. This confirmed the effectiveness of the present invention.

11: Dielectric substrate
20: Rectangular waveguide type high-frequency line
21: Upper conductor layer
22: Lower conductor layer
23a, 23b: Side wall through conductor group
31a, 31b, 31c: Termination through conductor
32: Termination conductor
42: High frequency signal terminal
43a, 43b: Ground terminal
51: First conductor
52a, 52b: second conductor
61: gap
63: Extension

Claims (2)

A dielectric substrate, an upper conductor layer disposed on the upper surface of the dielectric substrate, a lower conductor layer disposed on the lower surface of the dielectric substrate, and less than half of the wavelength of the high-frequency signal in the propagation direction of the high-frequency signal Is formed of two rows of through conductor groups for side walls arranged so as to electrically connect the upper conductor layer and the lower conductor layer at repeated intervals of the upper conductor layer, the lower conductor layer, and A rectangular waveguide type high-frequency line for transmitting the high-frequency signal by a region surrounded by the two rows of through conductor groups for side walls;
An extension portion in which the dielectric substrate and the lower conductor layer are extended in the propagation direction of the high-frequency signal from one end of the rectangular waveguide type high-frequency line;
The extension is disposed on the upper surface of the extension with a gap from the upper conductor layer, and is connected to the lower conductor layer of the extension via a termination through conductor that penetrates the dielectric substrate of the extension. A terminating conductor,
A high-frequency signal terminal for at least one of the input and output of the high-frequency signal, and a ground terminal disposed adjacent to the high-frequency signal terminal, disposed on the opposite side of the upper conductor layer with the gap therebetween A high-frequency circuit having
A first conductive wire having one end connected to the high-frequency signal terminal and disposed from the high-frequency signal terminal toward the gap;
A second conductor wire having one end connected to the ground terminal and disposed from the ground terminal toward the gap;
When viewed from the thickness direction of the dielectric substrate, the first conductor is such that a segment connecting the other end of the first conductor and the other end of the second conductor crosses the gap. Crossing over the gap, the other end is connected to the upper conductor layer, and the second conductor is connected to the terminating conductor without crossing the gap. A connection structure between a high-frequency circuit and a rectangular waveguide type high-frequency line.   Two of the ground terminals are arranged at an interval, and the high-frequency signal terminal is disposed between the two ground terminals, and one end of each of the two ground terminals is connected to the two ground terminals. 2. The high-frequency circuit and the rectangular waveguide type according to claim 1, wherein the second conducting wire is disposed on both sides of the first conducting wire so as to face the gap from the two ground terminals. Connection structure with high frequency lines.

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