JP2011114139A - Thermoelectric conversion module - Google Patents
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Abstract
Description
本発明は、支持基板と、該支持基板上に配列された複数の熱電変換素子と、支持基板に形成され熱電変換素子間を電気的に接続する複数の配線導体と、該配線導体と熱電変換素子との間を接続する半田とを具備する熱電変換モジュールに関するものである。 The present invention relates to a support substrate, a plurality of thermoelectric conversion elements arranged on the support substrate, a plurality of wiring conductors that are formed on the support substrate and electrically connect the thermoelectric conversion elements, and the wiring conductor and the thermoelectric conversion The present invention relates to a thermoelectric conversion module including solder for connecting between elements.
熱電変換素子は、ｐ型半導体とｎ型半導体とからなるｐｎ接合対に電流を流すと、それぞれの半導体の一端側が発熱するとともに他端側が吸熱するというペルチェ効果を利用したもので、これをモジュール化した熱電変換モジュールは、精密な温度制御が可能であり、小型で構造が簡単でありフロンレスの冷却装置、光検出素子、半導体製造装置等の冷却装置、レーザーダイオードの温度調節装置等への幅広い利用が期待されている。 The thermoelectric conversion element utilizes the Peltier effect that when a current is passed through a pn junction pair consisting of a p-type semiconductor and an n-type semiconductor, one end of each semiconductor generates heat and the other end absorbs heat. The thermoelectric conversion module that can be precisely controlled, is compact and simple in structure, has a wide range of cooling devices such as freonless cooling devices, photodetection elements, semiconductor manufacturing devices, laser diode temperature control devices, etc. Use is expected.
また、熱電変換素子は、その両端に温度差があると電流が流れる特徴を有しているため、排熱回収発電等の発電装置への利用が期待されている。 Moreover, since the thermoelectric conversion element has a characteristic that current flows when there is a temperature difference between both ends, the thermoelectric conversion element is expected to be used for a power generation apparatus such as exhaust heat recovery power generation.
熱電変換モジュールの構造は、例えば図８に示すように、支持基板１ａ、１ｂの表面に、それぞれ配線導体３ａ、３ｂが形成され、さらにｐ型熱電変換素子２ａおよびｎ型熱電変換素子２ｂ（以下、これらを総称して熱電変換素子２ということがある）が支持基板１ａ、１ｂで挟持され、配線導体３ａ、３ｂに熱電変換素子２の両端が半田６でそれぞれ接合されている。 For example, as shown in FIG. 8, the structure of the thermoelectric conversion module is such that wiring conductors 3a and 3b are respectively formed on the surfaces of the support substrates 1a and 1b, and further a p-type thermoelectric conversion element 2a and an n-type thermoelectric conversion element 2b (hereinafter, referred to as the thermoelectric conversion element 2b). These are collectively referred to as the thermoelectric conversion element 2), and are sandwiched between the support substrates 1a and 1b, and both ends of the thermoelectric conversion element 2 are joined to the wiring conductors 3a and 3b by solder 6, respectively.
そして、これらの熱電変換素子２は、電気的に直列になるように配線導体３ａ、３ｂで接続されており、その両端はそれぞれ外部接続端子４に接続されている。これらの外部接続端子４には、半田６によってリード線５が接続され、外部から電力が供給される構造となっている。 These thermoelectric conversion elements 2 are connected by wiring conductors 3a and 3b so as to be electrically in series, and both ends thereof are connected to the external connection terminals 4, respectively. These external connection terminals 4 are connected to lead wires 5 by solder 6 so that electric power is supplied from the outside.
室温付近で使用される冷却用の熱電変換モジュールには、冷却特性が優れるという観点からＡ２Ｂ３型結晶（ＡはＢｉおよび／またはＳｂ、ＢはＴｅおよび／またはＳｅ）からなる熱電変換素子２が一般的に用いられている。 A thermoelectric conversion module for cooling used near room temperature is a thermoelectric conversion element comprising an A 2 B 3 type crystal (A is Bi and / or Sb, B is Te and / or Se) from the viewpoint of excellent cooling characteristics. 2 is generally used.
ｐ型熱電変換素子２ａにはＢｉ２Ｔｅ３とＳｂ２Ｔｅ３との固溶体が、ｎ型熱電変換素子２ｂにはＢｉ２Ｔｅ３とＢｉ２Ｓｅ３との固溶体が特に優れた性能を示すことから、このＡ２Ｂ３型結晶（ＡはＢｉおよび／またはＳｂ、ＢはＴｅおよび／またはＳｅ）が熱電変換素子２に広く用いられている。 The p-type thermoelectric conversion element 2a has a particularly excellent performance of a solid solution of Bi 2 Te 3 and Sb 2 Te 3 and the n-type thermoelectric conversion element 2b has a particularly excellent performance of a solid solution of Bi 2 Te 3 and Bi 2 Se 3. Therefore, this A 2 B 3 type crystal (A is Bi and / or Sb, B is Te and / or Se) is widely used for the thermoelectric conversion element 2.
また、配線導体３ａ、３ｂは、支持基板１ａ、１ｂの表面に形成された配線導体本体７と、この配線導体本体７の表面を被覆する第１被覆層８と、該第１被覆層８の表面を被覆する第２被覆層９とから構成されている。言い換えると、配線導体本体７には銅が用いられ、この配線導体本体７表面には半田６との濡れ性を向上させる目的で、ＡｕやＳｎ等により第２被覆層９が形成され、配線導体本体７と第２被覆層９との間には、銅からなる配線導体本体７との接合強度が良好であるＮｉ等からなる第１被覆層８が形成されている。 The wiring conductors 3a and 3b include a wiring conductor main body 7 formed on the surfaces of the support substrates 1a and 1b, a first covering layer 8 that covers the surface of the wiring conductor main body 7, and the first covering layer 8 It is comprised from the 2nd coating layer 9 which coat | covers the surface. In other words, copper is used for the wiring conductor body 7, and the second coating layer 9 is formed of Au, Sn, or the like on the surface of the wiring conductor body 7 for the purpose of improving the wettability with the solder 6. Between the main body 7 and the second covering layer 9, a first covering layer 8 made of Ni or the like having a good bonding strength with the wiring conductor body 7 made of copper is formed.
このような熱電変換モジュールでは、配線導体３ａ、３ｂに熱電変換素子２の両端を半田６でそれぞれ接合する際に、半田６が第２被覆層９を介して、支持基板１ａ、１ｂ表面に流れ出し、隣接する配線導体３ａ、３ｂ間が導通してしまうという問題があった。 In such a thermoelectric conversion module, when both ends of the thermoelectric conversion element 2 are joined to the wiring conductors 3 a and 3 b with the solder 6, the solder 6 flows out to the surfaces of the support substrates 1 a and 1 b via the second coating layer 9. There is a problem that the adjacent wiring conductors 3a and 3b become conductive.
このような問題に対して、特許文献１では、半田との濡れ性が良好な第２被覆層を第１被覆層の半田側表面のみに形成し、第１被覆層の側面には形成せずに第１被覆層を露出させた熱電変換モジュールが記載されている。 With respect to such a problem, in Patent Document 1, the second coating layer having good wettability with solder is formed only on the solder side surface of the first coating layer, and is not formed on the side surface of the first coating layer. Describes a thermoelectric conversion module in which the first coating layer is exposed.
このような熱電変換モジュールでは、配線導体の半田側表面では半田が良好に濡れるため熱電変換素子を強固に接合でき、配線導体の側面では半田が濡れにくいため隣接する配線導体間が半田を介して短絡するのを抑制することができる。 In such a thermoelectric conversion module, the solder is well wetted on the surface of the wiring conductor on the solder side, so that the thermoelectric conversion element can be firmly joined. Short circuit can be suppressed.
しかしながら、特許文献１に記載された熱電変換モジュールでは、配線導体の側面では半田が濡れ難いため、隣接する配線導体間が半田を介して短絡するのをある程度抑制することができるものの、半田が配線導体の側面を伝わって支持基板上面に流れ出し、未だ隣接する配線導体間でショートが生じるおそれがあった。 However, in the thermoelectric conversion module described in Patent Document 1, since the solder is difficult to wet on the side surface of the wiring conductor, it is possible to suppress a short circuit between adjacent wiring conductors via the solder to some extent. There was a possibility that a short circuit would occur between the adjacent wiring conductors due to the fact that they flow along the side surface of the conductor and flow out to the upper surface of the support substrate.
特に、近年では熱電変換モジュールの小型化が要求されており、配線導体間の間隔が狭くなっているため、隣接する配線導体間でショートが生じ易い構造となっていた。 In particular, in recent years, miniaturization of thermoelectric conversion modules has been demanded, and since the interval between wiring conductors has become narrow, a structure in which a short circuit is likely to occur between adjacent wiring conductors has occurred.
本発明は、隣接する配線導体間でのショートを抑制できる熱電変換モジュールを提供することを目的とする。 An object of this invention is to provide the thermoelectric conversion module which can suppress the short circuit between adjacent wiring conductors.
本発明の熱電変換モジュールは、支持基板と、該支持基板上に配列された複数の熱電変換素子と、前記支持基板に形成され前記熱電変換素子間を電気的に接続する複数の配線導体と、該配線導体と前記熱電変換素子との間を接続する半田とを具備する熱電変換モジュールであって、前記配線導体が、前記支持基板の表面に形成された配線導体本体と、該配線導体本体の表面に形成された第１被覆層とを具備するとともに、該第１被覆層の側面が前記配線導体本体の側面から突出していることを特徴とする。 The thermoelectric conversion module of the present invention includes a support substrate, a plurality of thermoelectric conversion elements arranged on the support substrate, a plurality of wiring conductors formed on the support substrate and electrically connecting the thermoelectric conversion elements, A thermoelectric conversion module comprising solder for connecting between the wiring conductor and the thermoelectric conversion element, wherein the wiring conductor is formed on a surface of the support substrate, and the wiring conductor main body A first coating layer formed on the surface, and a side surface of the first coating layer protrudes from a side surface of the wiring conductor body.
このような熱電変換モジュールでは、第１被覆層の側面が配線導体本体の側面より突出しているため、半田が第１被覆層の側面から配線導体本体の側面へと伝わり難くなり、これにより配線導体間のショートを低減することができる。 In such a thermoelectric conversion module, since the side surface of the first coating layer protrudes from the side surface of the wiring conductor body, it is difficult for solder to be transferred from the side surface of the first coating layer to the side surface of the wiring conductor body. It is possible to reduce the short circuit.
また、本発明の熱電変換モジュールは、前記配線導体は、前記配線導体本体と、前記第１被覆層と、該第１被覆層の上面のみに形成され、前記第１被覆層よりも半田との濡れ性が良好な第２被覆層とを具備することを特徴とする。 In the thermoelectric conversion module of the present invention, the wiring conductor is formed only on the wiring conductor main body, the first coating layer, and an upper surface of the first coating layer, and the solder is more than the first coating layer. And a second coating layer having good wettability.
このような熱電変換モジュールでは、半田が第１被覆層、第２被覆層の側面から配線導体本体の側面へと伝わり難くなり、これにより配線導体間のショートを低減することができるとともに、半田との濡れ性が良好な第２被覆層により熱電変換素子を配線導体に良好に接合することができ、熱電変換素子の支持基板への接合強度を向上することができる。 In such a thermoelectric conversion module, it becomes difficult for the solder to be transferred from the side surfaces of the first coating layer and the second coating layer to the side surface of the wiring conductor main body, thereby reducing a short circuit between the wiring conductors, The thermoelectric conversion element can be satisfactorily bonded to the wiring conductor by the second coating layer having good wettability, and the bonding strength of the thermoelectric conversion element to the support substrate can be improved.
さらに、本発明の熱電変換モジュールは、前記第１被覆層の外周部に、前記第２被覆層が形成されていない第２被覆層非形成領域を有することを特徴とする。 Furthermore, the thermoelectric conversion module of the present invention has a second coating layer non-formation region where the second coating layer is not formed on the outer periphery of the first coating layer.
このような熱電変換モジュールでは、第１被覆層の外周部に、第２被覆層が形成されていない第２被覆層非形成領域を有するため、半田は第２被覆層と十分に接合できるとともに、半田は第１被覆層の外周部の第２被覆層非形成領域には流れ出し難いため、半田が第１被覆層の側面から配線導体本体の側面へと伝わり難くなり、これにより配線導体間のショートをさらに低減することができる。 In such a thermoelectric conversion module, since it has a second coating layer non-formation region in which the second coating layer is not formed on the outer periphery of the first coating layer, the solder can be sufficiently bonded to the second coating layer, Since the solder does not easily flow out to the second coating layer non-formation region on the outer periphery of the first coating layer, the solder is difficult to be transmitted from the side surface of the first coating layer to the side surface of the wiring conductor body, thereby causing a short circuit between the wiring conductors. Can be further reduced.
また、本発明の熱電変換モジュールは、前記配線導体の上面の前記熱電変換素子が半田で接合される部分に凹部を有することを特徴とする。このような熱電変換モジュールでは、半田が配線導体の上面の凹部に集合し易くなり、第１被覆層の外周部に半田がさらに流れ出し難くなり、半田が第１被覆層の側面から配線導体本体の側面へと伝わり難くなり、これにより配線導体間のショートをさらに低減することができる。 Moreover, the thermoelectric conversion module of the present invention is characterized in that a concave portion is formed in a portion of the upper surface of the wiring conductor where the thermoelectric conversion element is joined by solder. In such a thermoelectric conversion module, the solder easily collects in the recesses on the upper surface of the wiring conductor, and the solder does not easily flow out to the outer peripheral portion of the first coating layer. This makes it difficult to transmit to the side surface, thereby further reducing the short circuit between the wiring conductors.
また、本発明の熱電変換モジュールは、配線導体本体の側面に酸化層を有することを特徴とする。このような熱電変換モジュールでは、配線導体本体の側面に酸化層を有するため、配線導体本体の側面の半田濡れ性が低くなり、半田が第１被覆層の側面から配線導体本体の側面へと伝わり難くなり、これにより配線導体間のショートをさらに低減することができる。 In addition, the thermoelectric conversion module of the present invention is characterized by having an oxide layer on the side surface of the wiring conductor body. In such a thermoelectric conversion module, since the side surface of the wiring conductor body has an oxide layer, the solder wettability of the side surface of the wiring conductor body is reduced, and the solder is transferred from the side surface of the first coating layer to the side surface of the wiring conductor body. This makes it difficult to further reduce a short circuit between the wiring conductors.
本発明の冷却装置、発電装置または温度調節装置は、上記の熱電変換モジュールを冷却手段、発電手段または温度調節手段としたことを特徴とする。このような冷却装置、発電装置または温度調節装置では、第１被覆層の側面から配線導体本体の側面へと半田が伝わり難くなり、これにより配線導体間のショートを低減することができるため、製造歩留まりを向上できるとともに、使用時における信頼性および耐久性を向上することができる。 The cooling device, the power generation device or the temperature adjustment device of the present invention is characterized in that the thermoelectric conversion module is a cooling means, a power generation means or a temperature adjustment means. In such a cooling device, power generation device, or temperature control device, it is difficult to transmit solder from the side surface of the first coating layer to the side surface of the wiring conductor main body, thereby reducing a short circuit between the wiring conductors. The yield can be improved, and the reliability and durability during use can be improved.
本発明の熱電変換モジュールでは、第１被覆層の側面が配線導体本体の側面より突出しているため、半田が第１被覆層の側面から配線導体本体の側面へと伝わり難くなり、これにより配線導体間のショートを低減することができる。これにより、製造歩留まりを向上できるとともに、使用時における信頼性および耐久性を向上することができる。 In the thermoelectric conversion module of the present invention, since the side surface of the first coating layer protrudes from the side surface of the wiring conductor body, it is difficult for solder to be transferred from the side surface of the first coating layer to the side surface of the wiring conductor body. It is possible to reduce the short circuit. Thereby, while being able to improve a manufacturing yield, the reliability and durability at the time of use can be improved.
本発明の実施形態を図１を基に説明する。尚、図８に示す従来の熱電変換モジュールと同一部材については、図８と同一符号を付した。 An embodiment of the present invention will be described with reference to FIG. In addition, the same code | symbol as FIG. 8 was attached | subjected about the same member as the conventional thermoelectric conversion module shown in FIG.
本発明の熱電変換モジュールは、図１に示すように、下部の支持基板１ａ、上部の支持基板１ｂの表面に、それぞれ第１、第２配線導体３ａ、３ｂが形成され、さらにｐ型熱電変換素子２ａおよびｎ型熱電変換素子２ｂ（以下、総称して熱電変換素子２または熱電変換素子２ａ、２ｂということがある）が、支持基板１ａ、１ｂの間に配置され、熱電変換素子２が支持基板１ａ、１ｂで挟持されている。熱電変換素子２ａ、２ｂの両端面は、下部および上部の第１、第２配線導体３ａ、３ｂに半田６で接合されている。 As shown in FIG. 1, the thermoelectric conversion module of the present invention has first and second wiring conductors 3a and 3b formed on the surfaces of a lower support substrate 1a and an upper support substrate 1b, respectively, and p-type thermoelectric conversion. The element 2a and the n-type thermoelectric conversion element 2b (hereinafter collectively referred to as the thermoelectric conversion element 2 or the thermoelectric conversion elements 2a and 2b) are disposed between the support substrates 1a and 1b, and the thermoelectric conversion element 2 is supported. It is sandwiched between the substrates 1a and 1b. Both end surfaces of the thermoelectric conversion elements 2a and 2b are joined to the lower and upper first and second wiring conductors 3a and 3b by solder 6.
また、図１では、支持基板１ａ、１ｂで熱電変換素子２ａ、２ｂを挟持した例について記載したが、本発明では、支持基板１ａまたは１ｂを有しないタイプ、すなわち、熱電変換素子２ａ、２ｂの上面または下面は、配線導体だけで電気的に接続したものであっても良い。 Further, in FIG. 1, an example in which the thermoelectric conversion elements 2a and 2b are sandwiched between the support substrates 1a and 1b is described. However, in the present invention, a type that does not include the support substrate 1a or 1b, that is, the thermoelectric conversion elements 2a and 2b. The upper surface or the lower surface may be electrically connected only by the wiring conductor.
熱電変換素子２はｐ型熱電変換素子２ａおよびｎ型熱電変換素子２ｂの２種からなり、下部の支持基板１ａの一方の主面上に縦横に配列されている。ｐ型熱電変換素子２ａおよびｎ型熱電変換素子２ｂは、ｐ型、ｎ型、ｐ型、ｎ型と交互に、且つ電気的に直列になるように第１、第２配線導体３ａ、３ｂ（以下、単に配線導体３ａ、３ｂということもある）で接続し、一つの電気回路を形成している。 The thermoelectric conversion element 2 includes two types, a p-type thermoelectric conversion element 2a and an n-type thermoelectric conversion element 2b, and is arranged vertically and horizontally on one main surface of the lower support substrate 1a. The p-type thermoelectric conversion element 2a and the n-type thermoelectric conversion element 2b are arranged in the first and second wiring conductors 3a, 3b (alternatively and electrically in series with the p-type, n-type, p-type, and n-type ( Hereinafter, they are simply connected by wiring conductors 3a and 3b) to form one electric circuit.
熱電変換素子２は、常温付近で最も優れた熱電変換性能を有しているＢｉ−Ｔｅ系が好ましい。これにより良好な冷却効果を得ることができる。ｐ型としてＢｉ０．４Ｓｂ１．６Ｔｅ３、Ｂｉ０．５Ｓｂ１．５Ｔｅ３など、ｎ型としてＢｉ２Ｔｅ２．８５Ｓｅ０．１５、Ｂｉ２Ｔｅ２．９Ｓｅ０．１などが好適に使用される。 The thermoelectric conversion element 2 is preferably a Bi-Te system that has the most excellent thermoelectric conversion performance near room temperature. Thereby, a good cooling effect can be obtained. such as Bi 0.4 Sb 1.6 Te 3, Bi 0.5 Sb 1.5 Te 3 as p-type, Bi 2 Te 2.85 Se 0.15 as n-type, Bi 2 Te 2.9 Se 0.1 Etc. are preferably used.
配線導体３ａ、３ｂは、配線導体本体７ａ、７ｂと、配線導体本体７ａ、７ｂの表面にそれぞれ形成された第１被覆層８ａ、８ｂと、第１被覆層８ａ、８ｂの表面にそれぞれ形成された第２被覆層９ａ、９ｂとを有している。 The wiring conductors 3a and 3b are respectively formed on the surfaces of the wiring conductor bodies 7a and 7b, the first coating layers 8a and 8b formed on the surfaces of the wiring conductor bodies 7a and 7b, and the first coating layers 8a and 8b, respectively. And second covering layers 9a and 9b.
一つの電気回路の両端には外部接続端子４が接続され、電気的に接続されている。これらの外部接続端子４には、半田６によってリード線５が接続されており、外部から電力が供給される構造となっている。リード線５の代わりにブロック状、柱状の導体を接続してもよい。またリード線５やブロック状、柱状の導体を接合せず、外部接続端子４に直接ワイヤーをボンディングして電力を供給することもできる。 External connection terminals 4 are connected to both ends of one electric circuit, and are electrically connected. Lead wires 5 are connected to these external connection terminals 4 by solder 6 so that electric power is supplied from the outside. Instead of the lead wire 5, a block-like or columnar conductor may be connected. Further, it is possible to supply power by bonding a wire directly to the external connection terminal 4 without joining the lead wire 5 or the block-like or columnar conductor.
そして、本発明では、図１（ｂ）、図２に示すように、第１、第２配線導体３ａ、３ｂの半田６側の表面に第１被覆層８ａ、８ｂが形成され、第１被覆層８ａ、８ｂの側面８ａ１、８ｂ１が配線導体本体７ａ、７ｂの側面７ａ１、７ｂ１から外方に突出している。言い換えれば、第１被覆層８ａ、８ｂは配線導体本体７ａ、７ｂから外方に突出している。さらに言い換えれば、第１被覆層８ａ、８ｂの側面８ａ１、８ｂ１は配線導体本体７ａ、７ｂの側面７ａ１、７ｂ１よりも外側に位置している。さらに言い換えれば、第１被覆層８ａ、８ｂは、配線導体本体７ａ、７ｂから支持基板１ａ、１ｂの主面とほぼ平行に飛び出して形成されている。 And in this invention, as shown in FIG.1 (b) and FIG. 2, 1st coating layer 8a, 8b is formed in the surface at the side of the solder 6 of 1st, 2nd wiring conductor 3a, 3b, and 1st coating | cover The side surfaces 8a1 and 8b1 of the layers 8a and 8b protrude outward from the side surfaces 7a1 and 7b1 of the wiring conductor bodies 7a and 7b. In other words, the first coating layers 8a and 8b protrude outward from the wiring conductor bodies 7a and 7b. In other words, the side surfaces 8a1 and 8b1 of the first coating layers 8a and 8b are located outside the side surfaces 7a1 and 7b1 of the wiring conductor bodies 7a and 7b. In other words, the first coating layers 8a and 8b are formed so as to protrude from the wiring conductor bodies 7a and 7b substantially parallel to the main surfaces of the support substrates 1a and 1b.
すなわち、第１被覆層８ａ、８ｂの配線導体本体７ａ、７ｂ側の面は、外周部が配線導体本体７ａ、７ｂに接続されていない面を有しており、配線導体本体７ａ、７ｂの側面７ａ１、７ｂ１は、第１被覆層８ａ、８ｂの側面８ａ１、８ｂ１より凹んでいる。 That is, the surfaces of the first coating layers 8a and 8b on the side of the wiring conductor bodies 7a and 7b have surfaces whose outer peripheral portions are not connected to the wiring conductor bodies 7a and 7b, and the side surfaces of the wiring conductor bodies 7a and 7b. 7a1 and 7b1 are recessed from the side surfaces 8a1 and 8b1 of the first coating layers 8a and 8b.
第１被覆層８ａ、８ｂの側面８ａ１、８ｂ１における配線導体本体７ａ、７ｂの側面７ａ１、７ｂ１からの突出量は大きい方が良いが、第１被覆層８ａ、８ｂの破損を抑制するため１ｍｍ以下が望ましい。 The protruding amount from the side surfaces 7a1 and 7b1 of the wiring conductor bodies 7a and 7b on the side surfaces 8a1 and 8b1 of the first coating layers 8a and 8b is preferably large, but 1 mm or less in order to suppress damage to the first coating layers 8a and 8b. Is desirable.
配線導体本体７ａ、７ｂの厚みは、例えば０.０１〜３ｍｍ、第１被覆層８ａ、８ｂの厚みは、例えば０.００１〜１ｍｍ、第２被覆層９ａ、９ｂの厚みは、例えば０．０００１〜０.０１ｍｍとされている。 The thickness of the wiring conductor bodies 7a and 7b is, for example, 0.01 to 3 mm, the thickness of the first coating layers 8a and 8b is, for example, 0.001 to 1 mm, and the thickness of the second coating layers 9a and 9b is, for example, 0.0001. It is set to -0.01 mm.
配線導体本体７ａ、７ｂは、電流を流すためのもので、例えば、導電性の良好なＣｕ、Ａｌ、Ａｇ等が用いられ、第１被覆層８ａ、８ｂは、配線導体本体７ａ、７ｂとの接合性を向上させるためのもので、例えば、Ｎｉ、Ｓｎ等が用いられ、第２被覆層９ａ、９ｂは、半田との濡れ性を向上させるためのもので、例えば、ＡｕやＳｎ等が用いられている。第１被覆層８ａ、８ｂは、半田６の拡散を抑制する材料で形成されていることが望ましい。 The wiring conductor main bodies 7a and 7b are for flowing current. For example, Cu, Al, Ag or the like having good conductivity is used, and the first coating layers 8a and 8b are connected to the wiring conductor main bodies 7a and 7b. For improving the bondability, for example, Ni, Sn, etc. are used, and the second coating layers 9a, 9b are for improving the wettability with the solder, for example, using Au, Sn, etc. It has been. The first covering layers 8 a and 8 b are preferably formed of a material that suppresses the diffusion of the solder 6.
以上のように構成された熱電変換モジュールでは、第１被覆層８ａ、８ｂの側面８ａ１、８ｂ１が配線導体本体７ａ、７ｂの側面７ａ１、７ｂ１より突出しているため、言い換えると、配線導体本体７ａ、７ｂの側面７ａ１、７ｂ１が第１被覆層８ａ、８ｂの側面８ａ１、８ｂ１よりも凹んでいるため、図２（ｂ）に示したように、配線導体本体７ａ、７ｂの側面７ａ１、７ｂ１と第１被覆層８ａ、８ｂの側面８ａ１、８ｂ１が不連続となり、構造上、半田が第１被覆層８ａ、８ｂの側面８ａ１、８ｂ１から配線導体本体７ａ、７ｂの側面７ａ１、７ｂ１へと伝わり難くなり、これにより配線導体３ａ、３ｂ間のショートを低減することができる。 In the thermoelectric conversion module configured as described above, the side surfaces 8a1 and 8b1 of the first coating layers 8a and 8b protrude from the side surfaces 7a1 and 7b1 of the wiring conductor bodies 7a and 7b. In other words, the wiring conductor body 7a, Since the side surfaces 7a1 and 7b1 of 7b are recessed from the side surfaces 8a1 and 8b1 of the first coating layers 8a and 8b, as shown in FIG. 2B, the side surfaces 7a1 and 7b1 of the wiring conductor bodies 7a and 7b The side surfaces 8a1 and 8b1 of the first coating layers 8a and 8b are discontinuous, and the structure makes it difficult for the solder to be transferred from the side surfaces 8a1 and 8b1 of the first coating layers 8a and 8b to the side surfaces 7a1 and 7b1 of the wiring conductor bodies 7a and 7b. Thereby, a short circuit between the wiring conductors 3a and 3b can be reduced.
また、第１被覆層８ａ、８ｂの上面のみに、半田濡れ性の良好な第２被覆層９ａ、９ｂが形成されているので、半田が第２被覆層９ａ、９ｂから第１被覆層８ａ、８ｂの側面８ａ１、８ｂ１へと伝わり難くなり、これにより配線導体３ａ、３ｂ間のショートを低減することができるとともに、半田は第１被覆層８ａ、８ｂよりも半田との濡れ性が良好な第２被覆層９ａ、９ｂと良好に接合することができ、熱電変換素子２の支持基板１への接合強度を向上することができる。 Further, since the second coating layers 9a and 9b having good solder wettability are formed only on the upper surfaces of the first coating layers 8a and 8b, the solder is transferred from the second coating layers 9a and 9b to the first coating layer 8a, This makes it difficult to transmit to the side surfaces 8a1 and 8b1 of the 8b, thereby reducing the short circuit between the wiring conductors 3a and 3b, and the solder has better wettability with the solder than the first coating layers 8a and 8b. 2 can be bonded well to the covering layers 9a and 9b, and the bonding strength of the thermoelectric conversion element 2 to the support substrate 1 can be improved.
図３は、本発明の他の形態の熱電変換モジュールを示すもので、この形態では、第１被覆層８ａ、８ｂ表面の外周部に、第２被覆層９ａ、９ｂが形成されていない第２被覆層非形成領域Ａを有している。言い換えれば、図３では、第１被覆層８ａ、８ｂ表面の中央部に第２被覆層９ａ、９ｂが形成されており、第１被覆層８ａ、８ｂの外周部は露出しており、第１被覆層８ａ、８ｂ表面には、第２被覆層９ａ、９ｂを取り囲むように第２被覆層非形成領域Ａが形成されている。 FIG. 3 shows a thermoelectric conversion module according to another embodiment of the present invention. In this embodiment, the second coating layers 9a and 9b are not formed on the outer peripheral portions of the surfaces of the first coating layers 8a and 8b. It has a coating layer non-formation region A. In other words, in FIG. 3, the second coating layers 9a and 9b are formed at the center of the surface of the first coating layers 8a and 8b, and the outer peripheral portions of the first coating layers 8a and 8b are exposed. A second coating layer non-formation region A is formed on the surfaces of the coating layers 8a and 8b so as to surround the second coating layers 9a and 9b.
このような熱電変換モジュールでは、第１被覆層８ａ、８ｂの外周部に、第２被覆層９ａ、９ｂが形成されていない第２被覆層非形成領域Ａを有するため、半田は第２被覆層９ａ、９ｂと十分に接合するとともに、半田は第１被覆層８ａ、８ｂの外周部の第２被覆層非形成領域Ａには流れ難いため、第１被覆層８ａ、８ｂの外周部に半田が流れ難くなり、これにより配線導体３ａ、３ｂ間のショートをさらに低減することができる。 In such a thermoelectric conversion module, since the second coating layer non-formation region A in which the second coating layers 9a and 9b are not formed is provided on the outer periphery of the first coating layers 8a and 8b, the solder is the second coating layer. 9a and 9b are sufficiently bonded, and the solder is difficult to flow to the second coating layer non-formation region A of the outer periphery of the first coating layers 8a and 8b, so that the solder is applied to the outer periphery of the first coating layers 8a and 8b. This makes it difficult to flow, thereby further reducing the short circuit between the wiring conductors 3a and 3b.
図４は、本発明のさらに他の形態の熱電変換モジュールを示すもので、この形態では、配線導体３ａ、３ｂの上面の熱電変換素子２が接合される部分に凹部２５を有している。 FIG. 4 shows a thermoelectric conversion module according to still another embodiment of the present invention. In this embodiment, the thermoelectric conversion element 2 on the upper surface of the wiring conductors 3a and 3b has a concave portion 25.
すなわち、図４の熱電変換モジュールでは、配線導体本体７ａ、７ｂの上面が凹んでおり、このように凹んだ配線導体本体７ａ、７ｂの上面に、第１被覆層８ａ、８ｂおよび第２被覆層９ａ、９ｂが順次積層され、これにより、配線導体３ａ、３ｂの上面に凹部２５が形成されている。この凹部２５は、熱電変換素子２が接合される部分、言い換えると、熱電変換素子２が半田で接合される配線導体３ａ、３ｂの位置に形成されている。 That is, in the thermoelectric conversion module of FIG. 4, the upper surfaces of the wiring conductor bodies 7a and 7b are recessed, and the first covering layers 8a and 8b and the second covering layer are formed on the upper surfaces of the recessed wiring conductor bodies 7a and 7b. 9a and 9b are sequentially laminated, and thereby a recess 25 is formed on the upper surfaces of the wiring conductors 3a and 3b. The recess 25 is formed at a portion to which the thermoelectric conversion element 2 is joined, in other words, at the position of the wiring conductors 3a and 3b to which the thermoelectric conversion element 2 is joined by solder.
このような熱電変換モジュールでは、半田が配線導体３ａ、３ｂの上面の凹部２５に集合し易くなり、第１被覆層８ａ、８ｂの外周部に半田がさらに流れ難くなり、これにより配線導体３ａ、３ｂ間のショートをさらに低減することができる。 In such a thermoelectric conversion module, the solder easily collects in the concave portions 25 on the upper surfaces of the wiring conductors 3a and 3b, and the solder does not easily flow to the outer peripheral portions of the first coating layers 8a and 8b. Short circuit between 3b can be further reduced.
なお、凹部２５は、配線導体３ａ、３ｂの上面に形成されていれば良く、例えば、支持基板１に予め凹部を形成し、これに配線導体本体７ａ、７ｂ、第１被覆層８ａ、８ｂおよび第２被覆層９ａ、９ｂを順次積層して凹部を形成しても良い。 The concave portion 25 only needs to be formed on the upper surface of the wiring conductors 3a and 3b. For example, the concave portion is formed in the support substrate 1 in advance, and the wiring conductor bodies 7a and 7b, the first covering layers 8a and 8b, and The second coating layers 9a and 9b may be sequentially stacked to form a recess.
図５は、本発明のさらに他の形態の熱電変換モジュールを示すもので、この形態では、配線導体３ａ、３ｂの側面に酸化層２７が形成されている。これにより、配線導体３ａ、３ｂの側面の半田濡れ性を抑制し、配線導体３ａ、３ｂの側面への半田の流出を抑制することができ、配線導体３ａ、３ｂ間のショートをさらに低減することができる。 FIG. 5 shows a thermoelectric conversion module according to still another embodiment of the present invention. In this embodiment, an oxide layer 27 is formed on the side surfaces of the wiring conductors 3a and 3b. Thereby, the solder wettability of the side surfaces of the wiring conductors 3a and 3b can be suppressed, the outflow of solder to the side surfaces of the wiring conductors 3a and 3b can be suppressed, and the short circuit between the wiring conductors 3a and 3b can be further reduced. Can do.
以上のように構成された熱電変換モジュールは、図７に示すようにして作製することができる。先ず熱電変換素子２を準備する。本発明によれば、熱電変換素子２は周知の方法によって得られるものを用いることができる。即ち、焼結法、単結晶法、溶製法、熱間押出法、薄膜法などによって得られた材料を使用することが可能である。 The thermoelectric conversion module configured as described above can be manufactured as shown in FIG. First, the thermoelectric conversion element 2 is prepared. According to the present invention, the thermoelectric conversion element 2 can be obtained by a known method. That is, a material obtained by a sintering method, a single crystal method, a melting method, a hot extrusion method, a thin film method, or the like can be used.
図６は、本発明のさらに他の形態の熱電変換モジュールを示すもので、この形態では、配線導体３ａ、３ｂが、配線導体本体７ａ、７ｂの上面に第１被覆層８ａ、８ｂを形成して構成されている。言い換えると、図１（ｂ）の熱電変換モジュールにおいて、第２被覆層９ａ、９ｂを有しないタイプである。 FIG. 6 shows a thermoelectric conversion module according to still another embodiment of the present invention. In this embodiment, the wiring conductors 3a and 3b form first covering layers 8a and 8b on the upper surfaces of the wiring conductor bodies 7a and 7b. Configured. In other words, the thermoelectric conversion module of FIG. 1B is a type that does not have the second coating layers 9a and 9b.
このような熱電変換モジュールにおいても、第１被覆層８ａ、８ｂの側面８ａ１、８ｂ１が配線導体本体７ａ、７ｂの側面７ａ１、７ｂ１より突出しているため、配線導体本体７ａ、７ｂの側面７ａ１、７ｂ１と第１被覆層８ａ、８ｂの側面８ａ１、８ｂ１が不連続となり、半田が第１被覆層８ａ、８ｂの側面８ａ１、８ｂ１から配線導体本体７ａ、７ｂの側面７ａ１、７ｂ１へと伝わり難くなり、これにより配線導体３ａ、３ｂ間のショートを低減することができる。尚、この形態では、第１被覆層８ａ、８ｂはある程度半田６との濡れ性の良い材料から構成することが望ましい。 Also in such a thermoelectric conversion module, since the side surfaces 8a1 and 8b1 of the first coating layers 8a and 8b protrude from the side surfaces 7a1 and 7b1 of the wiring conductor bodies 7a and 7b, the side surfaces 7a1 and 7b1 of the wiring conductor bodies 7a and 7b. And the side surfaces 8a1 and 8b1 of the first coating layers 8a and 8b are discontinuous, and the solder is difficult to be transmitted from the side surfaces 8a1 and 8b1 of the first coating layers 8a and 8b to the side surfaces 7a1 and 7b1 of the wiring conductor bodies 7a and 7b. Thereby, a short circuit between the wiring conductors 3a and 3b can be reduced. In this embodiment, it is desirable that the first covering layers 8a and 8b are made of a material having good wettability with the solder 6 to some extent.
熱電変換素子２は、Ｂｉ、Ｓｂのうち少なくとも１種およびＴｅ、Ｓｅのうち少なくとも１種を含む焼結体を用いることが好ましい。これらの金属や合金は、室温付近で性能の高い熱電変換モジュールを実現できる。熱電変換素子２の大きさは特に限定されないが、小型熱電変換モジュールとしては、熱電変換素子２として、縦０．１〜２ｍｍ、横０．１〜２ｍｍ、高さ０．１〜３ｍｍの角柱状に加工したものを準備する。 The thermoelectric conversion element 2 is preferably a sintered body containing at least one of Bi and Sb and at least one of Te and Se. These metals and alloys can realize a thermoelectric conversion module with high performance near room temperature. Although the size of the thermoelectric conversion element 2 is not particularly limited, as a small thermoelectric conversion module, the thermoelectric conversion element 2 has a prismatic shape of 0.1 to 2 mm in length, 0.1 to 2 mm in width, and 0.1 to 3 mm in height. Prepare the processed material.
次いで、支持基板１として、アルミナ、窒化アルミニウム、窒化珪素、炭化珪素等を主成分とするセラミックスを準備する。また絶縁性の有機基板を使用することもできる。この支持基板１上に、図７（ａ）に示すように、配線導体本体７ａ、７ｂを形成しない部分に第１メッキレジスト層３５を印刷する。尚、図７では、支持基板７ａについてだけ記載した。 Next, as the support substrate 1, a ceramic mainly composed of alumina, aluminum nitride, silicon nitride, silicon carbide, or the like is prepared. An insulating organic substrate can also be used. As shown in FIG. 7A, a first plating resist layer 35 is printed on the support substrate 1 in a portion where the wiring conductor bodies 7a and 7b are not formed. In FIG. 7, only the support substrate 7a is described.
この第１メッキレジスト層３５の厚さは、所望する配線導体本体７ａ、７ｂの厚さと同等もしくは若干厚くする。次に、この第１メッキレジスト層３５の上面に第２メッキレジスト層３７を同様にして形成する。第２メッキレジスト層３７の開口部の大きさは、第１被覆層８ａ、８ｂの所望の突出量に合わせ、第１メッキレジスト層３５の開口部より大きくする。次に、図７（ｂ）に示すように、この支持基板１にメッキ法にて第１メッキレジスト層３５の高さまで配線導体本体７ａ、７ｂを形成し、次いで、図７（ｃ）に示すように、第２メッキレジスト層３７の高さ以下に第１被覆層８ａ、８ｂを形成する。次いで、図７（ｄ）に示すように、第１被覆層８ａ、８ｂ上に第２被覆層９ａ、９ｂを第２メッキレジスト層３７の高さまで形成し、メッキレジスト層３５、３７を除去することにより、図１（ｂ）、図２に示すような配線導体３ａ、３ｂを形成できる。 The thickness of the first plating resist layer 35 is equal to or slightly thicker than the desired thickness of the wiring conductor bodies 7a and 7b. Next, a second plating resist layer 37 is formed in the same manner on the upper surface of the first plating resist layer 35. The size of the opening of the second plating resist layer 37 is made larger than the opening of the first plating resist layer 35 in accordance with the desired amount of protrusion of the first coating layers 8a and 8b. Next, as shown in FIG. 7B, wiring conductor bodies 7a and 7b are formed on the support substrate 1 up to the height of the first plating resist layer 35 by plating, and then shown in FIG. 7C. As described above, the first coating layers 8 a and 8 b are formed below the height of the second plating resist layer 37. Next, as shown in FIG. 7D, the second coating layers 9a and 9b are formed on the first coating layers 8a and 8b up to the height of the second plating resist layer 37, and the plating resist layers 35 and 37 are removed. Thus, the wiring conductors 3a and 3b as shown in FIGS. 1B and 2 can be formed.
また、第２被覆層９ａ、９ｂの形成面積を第１被覆層８ａ、８ｂより小さくして、周辺部に第２被覆層非形成領域Ａを形成する場合は、第１被覆層８ａ、８ｂを形成した後、その外周部にメッキレジスト層を形成した後、第２被覆層９ａ、９ｂを形成することにより、図３に示すような、第２被覆層非形成領域Ａを有する配線導体３ａ、３ｂを形成できる。 Further, when forming the second coating layer 9a, 9b smaller than the first coating layer 8a, 8b and forming the second coating layer non-formation region A in the peripheral portion, the first coating layers 8a, 8b are formed. After the formation, a plating resist layer is formed on the outer peripheral portion, and then the second coating layers 9a and 9b are formed, whereby the wiring conductor 3a having the second coating layer non-forming region A as shown in FIG. 3b can be formed.
また配線導体３ａ、３ｂに凹部２５を形成する場合には、メッキ法により配線導体本体を形成する途中で一旦成膜を止め、凹部２５となる部分にメッキレジストを印刷した後、配線導体３ａ、３ｂの形成を再開することにより、図４に示すような凹部２５を有する配線導体３ａ、３ｂを形成できる。 Further, when forming the recesses 25 in the wiring conductors 3a and 3b, the film formation is temporarily stopped in the middle of forming the wiring conductor main body by plating, and after the plating resist is printed on the portions to be the recesses 25, the wiring conductors 3a, By restarting the formation of 3b, the wiring conductors 3a and 3b having the recesses 25 as shown in FIG. 4 can be formed.
また配線導体本体７ａ、７ｂの側面に酸化層２７を形成する場合は、配線導体本体７ａ、７ｂ、第１被覆層８ａ、８ｂ、第２被覆層９ａ、９ｂを形成した後、配線導体本体７ａ、７ｂは酸化するが、第１被覆層８ａ、８ｂ、第２被覆層９ａ、９ｂは酸化しない温度で、空気中で過熱する。 When the oxide layer 27 is formed on the side surfaces of the wiring conductor bodies 7a and 7b, the wiring conductor bodies 7a and 7b, the first coating layers 8a and 8b, and the second coating layers 9a and 9b are formed, and then the wiring conductor body 7a. 7b is oxidized, but the first coating layers 8a and 8b and the second coating layers 9a and 9b are overheated in air at a temperature at which they are not oxidized.
次いで、配線導体３の上に、半田ペーストを塗布し、この上に熱電変換素子２を配置し、加熱することにより、熱電変換素子２が配線導体３に半田６を介して接合される。なお、熱電変換素子２は、ｐ型熱電変換素子２ａおよびｎ型熱電変換素子２ｂが交互に並ぶように配列し、且つ電気的に直列に接続される。 Next, a solder paste is applied on the wiring conductor 3, the thermoelectric conversion element 2 is disposed thereon, and the thermoelectric conversion element 2 is joined to the wiring conductor 3 via the solder 6 by heating. The thermoelectric conversion elements 2 are arranged so that the p-type thermoelectric conversion elements 2a and the n-type thermoelectric conversion elements 2b are alternately arranged, and are electrically connected in series.
このようにして得られた熱電変換モジュールの外部接続端子４に、例えば直径０．３ｍｍの太さのリード線５をソフトビーム等で局所的に加熱、接合し、熱電変換モジュール９を作製する。この他、ＹＡＧレーザー等でリード線５をスポット溶接して熱電変換モジュールを作製しても構わない。またワイヤーボンディングに対応するため、リード線の替わりにブロック状、柱状の導体を外部接続端子４に接合しても良い。あるいは、外部接続端子４に直接ワイヤーボンディングすることもできる。 The thermoelectric conversion module 9 is manufactured by locally heating and bonding the lead wire 5 having a diameter of, for example, 0.3 mm to the external connection terminal 4 of the thermoelectric conversion module obtained in this way with a soft beam or the like. In addition, the thermoelectric conversion module may be manufactured by spot welding the lead wire 5 with a YAG laser or the like. In order to cope with wire bonding, a block-like or columnar conductor may be joined to the external connection terminal 4 instead of the lead wire. Alternatively, wire bonding can be directly performed on the external connection terminal 4.
本発明の熱電変換モジュールを、例えば特開平１−１２００２１号公報に記載されているように半導体製造装置やレーザー等の冷却手段として使用することができる。これにより長期信頼性、耐久性に優れた冷却装置を提供することができる。また、熱電変換モジュールを、例えば特開平１−５０７７５号公報に記載されているように発電装置として構成し、自動車やコージェネレーション等の排熱を利用した発電手段として使用することができる。これにより長期信頼性、耐久性に優れた発電装置を提供することができる。さらに、熱電変換モジュールを、例えば、特開平１０−４１５７５号公報に記載されているようにレーザーダイオードの温度調節手段として使用することができる。これにより、長期信頼性、耐久性に優れた温度調節装置を提供することができる。 The thermoelectric conversion module of the present invention can be used as a cooling means for a semiconductor manufacturing apparatus, a laser, or the like as described in, for example, JP-A-1-120021. Thereby, a cooling device excellent in long-term reliability and durability can be provided. Further, the thermoelectric conversion module can be configured as a power generation device as described in, for example, Japanese Patent Application Laid-Open No. 1-50775, and can be used as power generation means using exhaust heat from an automobile, cogeneration, or the like. Thereby, it is possible to provide a power generator excellent in long-term reliability and durability. Furthermore, the thermoelectric conversion module can be used as a temperature adjusting means of a laser diode as described in, for example, JP-A-10-41575. Thereby, the temperature control apparatus excellent in long-term reliability and durability can be provided.
先ず、ｎ型またはｐ型の熱電変換素子２を準備した。熱電変換素子２の形状は、四角柱で、寸法は縦０．６ｍｍ、横０．６ｍｍ、高さ１ｍｍであった。また、支持基板１として、大きさが縦６ｍｍ×横８ｍｍ×厚み０．２ｍｍのアルミナ基板を用意した。 First, an n-type or p-type thermoelectric conversion element 2 was prepared. The shape of the thermoelectric conversion element 2 was a quadrangular prism, and the dimensions were 0.6 mm in length, 0.6 mm in width, and 1 mm in height. In addition, an alumina substrate having a size of 6 mm long × 8 mm wide × 0.2 mm thick was prepared as the support substrate 1.
支持基板１上に、図７（ａ）に示すように、配線導体本体７ａ、７ｂを形成しない部分に厚み５０μｍの第１メッキレジスト層３５を印刷した。この第１メッキレジスト層３５の上面に、厚み５μｍの第２メッキレジスト層３７を同様にして形成した。第２メッキレジスト層３７の開口部の大きさは、第１メッキレジスト層３５の開口部よりも大きくし、第１メッキレジスト層３５の外周部が０．５ｍｍ幅で露出するように形成した。この支持基板１に対して、図７（ｂ）に示すように、無電解メッキ法にて第１メッキレジスト層３５の高さまでＣｕをメッキし、厚み５０μｍの配線導体本体７ａ、７ｂを形成し、次いで、図７（ｃ）に示すように、第２メッキレジスト層３７の高さ以下に無電解メッキ法にてＮｉをメッキし、厚さ５μｍの第１被覆層８ａ、８ｂを形成した。 As shown in FIG. 7A, a first plating resist layer 35 having a thickness of 50 μm was printed on the support substrate 1 in a portion where the wiring conductor bodies 7a and 7b were not formed. On the upper surface of the first plating resist layer 35, a second plating resist layer 37 having a thickness of 5 μm was formed in the same manner. The size of the opening of the second plating resist layer 37 was made larger than the opening of the first plating resist layer 35 so that the outer periphery of the first plating resist layer 35 was exposed with a width of 0.5 mm. As shown in FIG. 7B, the support substrate 1 is plated with Cu to the height of the first plating resist layer 35 by an electroless plating method to form wiring conductor bodies 7a and 7b having a thickness of 50 μm. Then, as shown in FIG. 7C, Ni was plated by the electroless plating method below the height of the second plating resist layer 37 to form first covering layers 8a and 8b having a thickness of 5 μm.
次いで、図７（ｄ）に示すように、第１被覆層８ａ、８ｂ上に第２メッキレジスト層３７の高さまで無電解メッキ法にてＡｕをメッキし、厚さ０．５μｍの第２被覆層９ａ、９ｂを形成し、この後、図７（ｅ）に示すように、第１メッキレジスト層３５、第２メッキレジスト層３７を除去し、図１（ｂ）、図２に示すような配線導体３ａ、３ｂを形成した。 Next, as shown in FIG. 7 (d), Au is plated on the first coating layers 8a and 8b to the height of the second plating resist layer 37 by an electroless plating method to form a second coating having a thickness of 0.5 μm. After forming the layers 9a and 9b, as shown in FIG. 7 (e), the first plating resist layer 35 and the second plating resist layer 37 are removed, and as shown in FIG. 1 (b) and FIG. Wiring conductors 3a and 3b were formed.
走査型電子顕微鏡にて、配線導体３ａ、３ｂの側面を確認したところ、第１被覆層８ａ、８ｂの側面８ａ１、８ｂ１が配線導体本体７ａ、７ｂの側面７ａ１、７ｂ１よりも０．５ｍｍ突出していることを確認した。 When the side surfaces of the wiring conductors 3a and 3b were confirmed with a scanning electron microscope, the side surfaces 8a1 and 8b1 of the first coating layers 8a and 8b protruded 0.5 mm from the side surfaces 7a1 and 7b1 of the wiring conductor bodies 7a and 7b. I confirmed.
この後、下部の支持基板１ａの配線導体３ａ上に、Ａｕ−Ｓｎからなる半田ペーストを印刷し、その上に熱電変換素子２を並べ、下部の支持基板１ａの反対面から加熱し、熱電変換素子２を固定した。熱電変換素子２の数は、ｐ型熱電変換素子２ａおよびｎ型熱電変換素子２ｂを同数ずつ用いた。同様にして上部の支持基板１ｂと熱電変換素子２とを半田で接合して熱電変換モジュールを作製した。配線導体３は、下部の支持基板１ａ側に２４個（外部接続端子４を含む）、上部の支持基板１ｂ側に２３個形成し、総数４７個であった。得られた熱電変換モジュール９の外部接続端子４上にリード線５を半田で接続した。 Thereafter, a solder paste made of Au-Sn is printed on the wiring conductor 3a of the lower support substrate 1a, the thermoelectric conversion elements 2 are arranged on the solder paste, and the thermoelectric conversion is performed from the opposite surface of the lower support substrate 1a. Element 2 was fixed. As for the number of thermoelectric conversion elements 2, the same number of p-type thermoelectric conversion elements 2a and n-type thermoelectric conversion elements 2b were used. Similarly, the upper support substrate 1b and the thermoelectric conversion element 2 were joined with solder to produce a thermoelectric conversion module. 24 wiring conductors 3 (including the external connection terminals 4) were formed on the lower support substrate 1a side, and 23 wiring conductors 3 were formed on the upper support substrate 1b side, for a total of 47. The lead wire 5 was connected to the external connection terminal 4 of the obtained thermoelectric conversion module 9 with solder.
このようにして得られた１０個の熱電変換モジュール９について、配線導体３ａ、３ｂ間における支持基板１上に半田が流れ出しているか否かの確認を、双眼顕微鏡にて確認した（４５箇所×１０個）。その結果、配線導体３ａ、３ｂ間における支持基板１上への半田の流れ出しは確認できなかった。 With respect to the ten thermoelectric conversion modules 9 thus obtained, it was confirmed with a binocular microscope whether or not solder was flowing out on the support substrate 1 between the wiring conductors 3a and 3b (45 locations × 10 Pieces). As a result, the flow of solder onto the support substrate 1 between the wiring conductors 3a and 3b could not be confirmed.
これに対して、支持基板にメッキレジスト層を用いて、配線導体本体の側面、第１被覆層の側面、第２被覆層の側面を段差がない同一面とした（第１被覆層の配線導体本体の側面からの突出量０）、比較例の熱電変換モジュールを１０個作製し、上記と同様に、配線導体３ａ、３ｂ間における支持基板１上に半田が流れ出しているか否かの確認を、双眼顕微鏡にて確認した。その結果、配線導体３ａ、３ｂ間における支持基板１上への半田の流れ出しが２箇所確認できた。 On the other hand, the side surface of the wiring conductor main body, the side surface of the first coating layer, and the side surface of the second coating layer are made the same surface with no step by using a plating resist layer on the support substrate (the wiring conductor of the first coating layer). Protrusion amount 0 from the side surface of the body, 10 thermoelectric conversion modules of comparative examples are produced, and in the same manner as described above, whether or not the solder is flowing out on the support substrate 1 between the wiring conductors 3a and 3b, It confirmed with the binocular microscope. As a result, it was confirmed that the solder flowed out onto the support substrate 1 between the wiring conductors 3a and 3b at two places.
これにより、第１被覆層の側面を配線導体本体の側面より突出させることにより、半田が第１被覆層の側面から配線導体本体の側面へと伝わり難くなり、これにより配線導体間のショートを低減できることがわかる。 As a result, by making the side surface of the first coating layer protrude from the side surface of the wiring conductor body, it becomes difficult for the solder to be transferred from the side surface of the first coating layer to the side surface of the wiring conductor body, thereby reducing the short circuit between the wiring conductors. I understand that I can do it.
１・・・支持基板
１ａ・・・下部の支持基板
１ｂ・・・上部の支持基板
２・・・熱電変換素子
２ａ・・・ｐ型熱電変換素子
２ｂ・・・ｎ型熱電変換素子
３・・・配線導体
３ａ・・・第１配線導体
３ｂ・・・第２配線導体
４・・・外部接続導体
５・・・リード線
６・・・半田
７ａ、７ｂ・・・配線導体本体
７ａ１、７ｂ１・・・配線導体本体の側面
８ａ、８ｂ・・・第１被覆層
８ａ１、８ｂ１・・・第１被覆層の側面
９ａ、９ｂ・・・第２被覆層
２５・・・凹部
２７・・・酸化層
Ａ・・・第２被覆層非形成領域
DESCRIPTION OF SYMBOLS 1 ... Support substrate 1a ... Lower support substrate 1b ... Upper support substrate 2 ... Thermoelectric conversion element 2a ... P-type thermoelectric conversion element 2b ... N-type thermoelectric conversion element 3. -Wiring conductor 3a ... 1st wiring conductor 3b ... 2nd wiring conductor 4 ... External connection conductor 5 ... Lead wire 6 ... Solder 7a, 7b ... Wiring conductor main body 7a1, 7b1 ..Side surface 8a, 8b ... first coating layer 8a1, 8b1 ... side surface of first coating layer 9a, 9b ... second coating layer 25 ... recess 27 ... oxide layer A: Second coating layer non-formation region
Claims (8)
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| CN112436086A (en) * | 2020-11-17 | 2021-03-02 | 杭州大和热磁电子有限公司 | Semiconductor refrigeration module |
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| JPH11298053A (en) * | 1998-04-09 | 1999-10-29 | Seiko Seiki Co Ltd | Thermoelectric transfer module |
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