JP2011112511A - Magnetic type force sensor - Google Patents

Magnetic type force sensor Download PDF

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JP2011112511A
JP2011112511A JP2009269186A JP2009269186A JP2011112511A JP 2011112511 A JP2011112511 A JP 2011112511A JP 2009269186 A JP2009269186 A JP 2009269186A JP 2009269186 A JP2009269186 A JP 2009269186A JP 2011112511 A JP2011112511 A JP 2011112511A
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conversion element
magnetic
magnetic flux
magnetoelectric conversion
generation source
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JP2011112511A5 (en
JP5500957B2 (en
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Shuichi Sato
修一 佐藤
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Canon Inc
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Canon Inc
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Priority to JP2009269186A priority Critical patent/JP5500957B2/en
Application filed by Canon Inc filed Critical Canon Inc
Priority to US13/509,218 priority patent/US8978488B2/en
Priority to PCT/JP2010/070522 priority patent/WO2011065267A2/en
Priority to KR1020127015722A priority patent/KR101325542B1/en
Priority to CN201080052676.5A priority patent/CN102667433B/en
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/14Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/12Measuring force or stress, in general by measuring variations in the magnetic properties of materials resulting from the application of stress
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/20Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2268Arrangements for correcting or for compensating unwanted effects
    • G01L1/2281Arrangements for correcting or for compensating unwanted effects for temperature variations
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L5/00Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
    • G01L5/0061Force sensors associated with industrial machines or actuators
    • G01L5/0076Force sensors associated with manufacturing machines
    • G01L5/009Force sensors associated with material gripping devices

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Force Measurement Appropriate To Specific Purposes (AREA)
  • Measuring Magnetic Variables (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a magnetic type force sensor capable of detecting and correcting accurately fluctuation of a generated magnetic field of a magnetic flux generation source. <P>SOLUTION: This sensor is provided with a displacement magnetoelectric conversion element (4) for detecting a magnetic field change generated by an external force so as to be faced to a magnetic pole end face of the magnetic flux generation source (5), and a fixed magnetoelectric conversion element (7) not generating a magnetic field change generated by the external force. A fluctuation ΔB of the generated magnetic field of the magnetic flux generation source generated by an environmental fluctuation such as a temperature rise inside the sensor, or by a secular change or the like is detected by the fixed magnetoelectric conversion element (7). Offset correction of the displacement magnetoelectric conversion element or correction of a sensitivity coefficient is performed by performing correction processing by an operation part (11) based on the detection amount. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、磁束発生源の磁束変化を磁電変換素子で力、モーメント成分を検出する磁気式力覚センサに関し、特に、磁束発生源の発生磁場が変化した際の補正に関するものである。   The present invention relates to a magnetic force sensor that detects a change in magnetic flux of a magnetic flux generation source using a magnetoelectric transducer, and more particularly to correction when a magnetic field generated by the magnetic flux generation source changes.

力覚センサは、例えば、ロボットアームにより部品の組立を行う場合、手首部分に取付けられ組付け作業の際に生じる力やモーメント成分を検出し、ハンド部の姿勢制御を行うために用いられる。力覚センサには、特開2004−325328号(特許文献1)に記載されているように作用部の変位を磁気的に検出する方法を利用しているものが提示されている。   For example, when a part is assembled by a robot arm, the force sensor is attached to the wrist portion and is used to detect a force or moment component generated during the assembling work and to control the posture of the hand unit. As the force sensor, a sensor using a method of magnetically detecting the displacement of the action part as described in JP-A-2004-325328 (Patent Document 1) is proposed.

特許文献1に記載の従来例の構造を図5に示す。弾性体に埋め込まれた永久磁石14と、その永久磁石14の磁極に対して対向するように4つの磁電変換素子15a〜15dを配置している。弾性体に作用力が加わると永久磁石14が変位し、それによって生じた磁場の変化をホール素子などの磁電変換素子15a〜15dによって検出する。この検出した磁場の変化に基づき、X軸方向、Y軸方向、Z軸方向の力成分の検出を可能としている。   The structure of the conventional example described in Patent Document 1 is shown in FIG. The four magnetoelectric conversion elements 15a to 15d are arranged so as to face the permanent magnet 14 embedded in the elastic body and the magnetic poles of the permanent magnet 14. When an acting force is applied to the elastic body, the permanent magnet 14 is displaced, and changes in the magnetic field generated thereby are detected by the magnetoelectric conversion elements 15a to 15d such as Hall elements. Based on the detected change in the magnetic field, force components in the X-axis direction, the Y-axis direction, and the Z-axis direction can be detected.

特許文献1では磁束発生源に永久磁石を使用している。一般的に、永久磁石が発生する磁場の強さは、永久磁石の温度によりその絶対値は変化する(所定の温度係数を有している)。永久磁石は、回路基板から発せられる熱、周囲に配置されたモータ等といった外部から受ける熱によって温度が上昇すると、磁場の強さが弱まってしまう。したがって、永久磁石が発生する磁場を用いる機器は、その温度による磁場の変化を補償する必要がある。また、温度等の影響以外にも、永久磁石の経年変化によっても磁場は変化する。   In Patent Document 1, a permanent magnet is used as a magnetic flux generation source. Generally, the absolute value of the strength of a magnetic field generated by a permanent magnet varies depending on the temperature of the permanent magnet (having a predetermined temperature coefficient). When the temperature of the permanent magnet rises due to heat generated from the circuit board, heat received from the outside such as a motor arranged around the permanent magnet, the strength of the magnetic field is weakened. Therefore, an apparatus using a magnetic field generated by a permanent magnet needs to compensate for a change in the magnetic field due to its temperature. In addition to the influence of temperature and the like, the magnetic field also changes due to aging of the permanent magnet.

これに対して、特開2005−321592(特許文献2)のように温度センサを設けた温度補償回路により温度補償を行う方法が取られている。   On the other hand, a method of performing temperature compensation by a temperature compensation circuit provided with a temperature sensor as in JP-A-2005-321592 (Patent Document 2) is employed.

特許文献2に記載の従来例の構造を図に示す。図6(a)において、永久磁石14に対向する位置に設けられたホール素子16が描かれている。また図6(b)にはホール素子に隣接して設けられた定電圧源(不図示)に接続された温度補償回路が描かれている。
ホール素子からセレクタへの出力電圧が、温度上昇が生じて低下した場合、ホール素子に隣接して設けられた温度補償回路に備えられた温度センサの負の温度特性により、温度上昇に比例して温度補償回路からホール素子に出力される電流値が高められる。
この高められた電流がホール素子16に出力されることで、温度上昇により低下していたホール素子16からセレクタへの出力電圧が回復することになる。
The structure of the conventional example described in Patent Document 2 is shown in the figure. In FIG. 6A, the Hall element 16 provided at a position facing the permanent magnet 14 is depicted. FIG. 6B illustrates a temperature compensation circuit connected to a constant voltage source (not shown) provided adjacent to the Hall element.
When the output voltage from the Hall element to the selector drops due to a temperature rise, the negative temperature characteristic of the temperature sensor provided in the temperature compensation circuit provided adjacent to the Hall element is proportional to the temperature rise. The current value output from the temperature compensation circuit to the Hall element is increased.
By outputting this increased current to the Hall element 16, the output voltage from the Hall element 16 to the selector, which has been reduced due to the temperature rise, is recovered.

特開2004−325328号公報JP 2004-325328 A 特開2005−321592号公報JP 2005-315992 A

しかしながら、引用文献2記載の従来例では、磁束の受け手であるホール素子の出力に対して温度補償するものであった。したがって、永久磁石と温度センサの熱容量(比熱)の違いがある場合や、永久磁石14そのものが温度上昇する一方でホール素子に温度変化が無いなど局所的に温度上昇が生じた場合には温度センサが永久磁石の平均温度を正確に測定することは困難である。また温度補償回路をホール素子や永久磁石などの検出子とは別に設けなければならず、コストや小型化の観点からも不利である。   However, in the conventional example described in the cited document 2, temperature compensation is performed for the output of the Hall element that is a receiver of the magnetic flux. Therefore, when there is a difference in the heat capacity (specific heat) between the permanent magnet and the temperature sensor, or when the temperature rises locally, such as when the temperature of the permanent magnet 14 itself rises while there is no temperature change in the Hall element, the temperature sensor However, it is difficult to accurately measure the average temperature of the permanent magnet. Further, a temperature compensation circuit must be provided separately from a detector such as a Hall element or a permanent magnet, which is disadvantageous from the viewpoint of cost and miniaturization.

本発明は上述した課題を解決するためになされたものであって、その目的は、磁束発生源の発生磁場の変動を精度よく検出し、補正することが可能な、コンパクトな磁気式力覚センサを提供することにある。   The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a compact magnetic force sensor capable of accurately detecting and correcting fluctuations in a magnetic field generated by a magnetic flux generation source. Is to provide.

上記課題を解決するため本発明は、
作用部に受けた力によって変位可能な前記作用部と磁束発生源との相対位置に基づいて前記力を検知する磁気式力覚センサにおいて、
支持部材に弾性支持された作用部と、
前記作用部に固定された第一の磁電変換素子と、
前記第一の磁電変換素子に対向して配置された磁束発生源と、
前記磁束発生源に対して固定位置に配置された第二の磁電変換素子と、
前記第一の磁電変換素子の出力を、前記第二の磁電変換素子の出力に基づいて補正する演算処理部とを有することを特徴とする。
In order to solve the above problems, the present invention
In the magnetic force sensor that detects the force based on the relative position between the action part and the magnetic flux generation source that can be displaced by the force received by the action part,
An action part elastically supported by the support member;
A first magnetoelectric transducer fixed to the action part;
A magnetic flux generation source disposed opposite to the first magnetoelectric transducer;
A second magnetoelectric transducer disposed at a fixed position with respect to the magnetic flux generation source;
And an arithmetic processing unit that corrects the output of the first magnetoelectric conversion element based on the output of the second magnetoelectric conversion element.

本発明によれば、温度補償回路など付加的な構成を用いないコンパクトな構成の力覚センサを提供できる。また本発明の磁気式力覚センサによると、温度変動以外の原因で発生した磁束発生源の発生磁場の変動に対しても補正可能である。   ADVANTAGE OF THE INVENTION According to this invention, the force sensor of a compact structure which does not use additional structures, such as a temperature compensation circuit, can be provided. Further, according to the magnetic force sensor of the present invention, it is possible to correct for fluctuations in the generated magnetic field of the magnetic flux generation source generated due to causes other than temperature fluctuations.

本発明に係る磁気式力覚センサの構造を示す図である。It is a figure which shows the structure of the magnetic type force sensor which concerns on this invention. 本発明の本発明の温度補償方法について説明するための図である。It is a figure for demonstrating the temperature compensation method of this invention of this invention. Z軸対称の2次元静磁場モデルでシミュレーションを行った磁束線図である。It is the magnetic flux diagram which performed the simulation with the Z-axis symmetrical two-dimensional static magnetic field model. Z軸対称の2次元静磁場モデルでシミュレーションを行った磁束線図である。It is the magnetic flux diagram which performed the simulation with the Z-axis symmetrical two-dimensional static magnetic field model. 従来の磁気式力覚センサの構造を示す図である。It is a figure which shows the structure of the conventional magnetic type force sensor. 従来の力センサの構造を示す図である。It is a figure which shows the structure of the conventional force sensor.

図1は本発明の特徴を最もよく表す図面であり、磁気式力覚センサのX−Z軸に沿った断面図である。   FIG. 1 is a drawing that best represents the features of the present invention, and is a cross-sectional view of the magnetic force sensor taken along the X-Z axis.

図1において1は力が印加される作用部、2は作用部1を筐体に弾性支持する弾性体であり、作用部1は力が作用部に印加された際に変位可能に弾性支持されている。3は磁電変換素子を実装するための基板、4a〜4bは磁電変換素子(以下では変位磁電変換素子と記す)、5は磁束発生源、6は磁束発生源5を支持すると共に、磁電変換素子を実装する基板である。7は実装基板6上に設けられ、磁束発生源5との相対位置が固定された磁電変換素子(以下では固定磁電変換素子と記す)である。   In FIG. 1, 1 is an action part to which a force is applied, 2 is an elastic body that elastically supports the action part 1 on the housing, and the action part 1 is elastically supported so that it can be displaced when a force is applied to the action part. ing. 3 is a substrate for mounting the magnetoelectric conversion element, 4a to 4b are magnetoelectric conversion elements (hereinafter referred to as displacement magnetoelectric conversion elements), 5 is a magnetic flux generation source, 6 is supporting the magnetic flux generation source 5, and the magnetoelectric conversion element It is the board which mounts. Reference numeral 7 denotes a magnetoelectric conversion element (hereinafter referred to as a fixed magnetoelectric conversion element) provided on the mounting substrate 6 and having a fixed relative position to the magnetic flux generation source 5.

磁束発生源5はNd−Fe−B磁石、Sm−Co磁石、Sm−Fe−N磁石、フェライト磁石に代表されるような永久磁石であってもよく、磁性体まわりに、コイルを巻き、通電することによって磁力を発生させる電磁石であってもよい。固定磁電変換素子7および変位磁電変換素子4a〜4bはホール素子、MR素子、磁気インピーダンス素子、フラックスゲート素子、巻き線コイルなど、磁場の変化を電気信号として出力することができるものである。また作用部1は筐体に対して支持されている必要は無く、作用部1は弾性体を介して支持できる支持部材に支持されていればよい。   The magnetic flux generation source 5 may be a permanent magnet represented by an Nd—Fe—B magnet, an Sm—Co magnet, an Sm—Fe—N magnet, or a ferrite magnet. It may be an electromagnet that generates a magnetic force. The fixed magnetoelectric conversion element 7 and the displacement magnetoelectric conversion elements 4a to 4b can output changes in the magnetic field as electric signals, such as Hall elements, MR elements, magnetic impedance elements, flux gate elements, and winding coils. Moreover, the action part 1 does not need to be supported with respect to a housing | casing, and the action part 1 should just be supported by the support member which can be supported via an elastic body.

作用部1に力が印加されると、作用部1は実装基板3と変位磁電変換素子4a、4bとともに弾性体2の弾性変形によって磁束発生源5に対して変位を生じる。それによって、変位磁電変換素子4a、4bからは、変位量に比例した電気信号の変化が出力として得られる。一方で、固定磁電変換素子7が取り付けられた実装基板6は作用部1に力が印加されても出力の電気的変化は生じない。つまり、固定磁電変換素子7の出力に変化が生じる場合は、温度上昇(もしくは温度低下)や磁束発生源5の経年変化等の環境変動による磁束発生源5の発生磁束量に変化があったときである。   When a force is applied to the action part 1, the action part 1 is displaced with respect to the magnetic flux generation source 5 by elastic deformation of the elastic body 2 together with the mounting substrate 3 and the displacement magnetoelectric transducers 4 a and 4 b. Thereby, from the displacement magnetoelectric transducers 4a and 4b, an electrical signal change proportional to the amount of displacement is obtained as an output. On the other hand, the mounting substrate 6 to which the fixed magnetoelectric conversion element 7 is attached does not cause an electrical change in output even when a force is applied to the action portion 1. That is, when a change occurs in the output of the fixed magnetoelectric conversion element 7, there is a change in the amount of magnetic flux generated by the magnetic flux generation source 5 due to environmental fluctuations such as a temperature increase (or temperature decrease) or a secular change of the magnetic flux generation source 5. It is.

力、モーメントの算出方法について図1を参照しながら説明する。例えば、それぞれ、作用部1にZ軸方向の力Fz、Y軸方向のモーメントMyを受けたとする。変位磁電変換素子4a、4b及び、固定磁電変換素子7を通過する磁束密度の変化量をそれぞれB4a、B4b、B7とする。kz、kyは磁束密度変位量から力、モーメントに算出するための感度係数である。
Fz=kz((B4a+B4b)−B7)
My=ky(B4a−B4b)
A method for calculating force and moment will be described with reference to FIG. For example, it is assumed that the acting portion 1 receives a force Fz in the Z-axis direction and a moment My in the Y-axis direction. Let B4a, B4b, and B7 be the amount of change in magnetic flux density that passes through the displacement magnetoelectric conversion elements 4a and 4b and the fixed magnetoelectric conversion element 7, respectively. kz and ky are sensitivity coefficients for calculating force and moment from the magnetic flux density displacement amount.
Fz = kz ((B4a + B4b) -B7)
My = ky (B4a-B4b)

以上のように、各々の素子の差分を取ることにより、変位磁電変換素子4a、4b及び、固定磁電変換素子7を通過する磁束密度の変化量から、作用部1に加わった力及びモーメントを算出することができる。ここで、固定磁電変換素子7は以下で説明する温度変化の検出だけでなく力検出の際に、出力の基準素子としても機能することがわかる。   As described above, the force and moment applied to the action part 1 are calculated from the amount of change in magnetic flux density passing through the displacement magnetoelectric transducers 4a and 4b and the fixed magnetoelectric transducer 7 by taking the difference of each element. can do. Here, it is understood that the fixed magnetoelectric conversion element 7 functions not only as a temperature change described below but also as an output reference element in the force detection.

次に、本発明の温度補償方法について図2を参照しながら説明する。4a、4bは上述した変位磁電変換素子であり、7は固定磁電変換素子である。   Next, the temperature compensation method of the present invention will be described with reference to FIG. 4a and 4b are the displacement magnetoelectric conversion elements described above, and 7 is a fixed magnetoelectric conversion element.

8は磁電変換素子の信号を増幅するための信号増幅部であり、個々の磁電変換素子に接続されている。9は磁電変換素子からの出力信号を演算部へ取り込むための信号変換器であり、信号増幅部8にそれぞれ接続されている。10は演算部の演算結果をもとに、変位磁電変換素子へフィードバックする信号調整器であり、変位磁電変換素子の出力が変換器9に入力される前に補正処理を行うための信号を出力できる構成になっている。   A signal amplifying unit 8 amplifies the signal of the magnetoelectric conversion element, and is connected to each magnetoelectric conversion element. Reference numeral 9 denotes a signal converter for taking an output signal from the magnetoelectric conversion element into the arithmetic unit, and is connected to the signal amplifying unit 8. Reference numeral 10 denotes a signal adjuster that feeds back to the displacement magnetoelectric conversion element based on the calculation result of the calculation unit, and outputs a signal for performing correction processing before the output of the displacement magnetoelectric conversion element is input to the converter 9. It can be configured.

温度変動や経年変化などによって、磁束発生源5の発生磁場がΔB変動した結果、固定磁電変換素子7の出力電圧がΔV7=ksΔB変化する。ここで、ksは磁束変化量から出力電圧へ変換するための係数である。発生磁場の変動分の検出から補正処理までを以下に示す。   As a result of the fluctuation of the magnetic field generated by the magnetic flux generation source 5 by ΔB due to temperature fluctuation or secular change, the output voltage of the fixed magnetoelectric conversion element 7 changes by ΔV7 = ksΔB. Here, ks is a coefficient for converting the magnetic flux change amount into the output voltage. The process from the detection of the fluctuation of the generated magnetic field to the correction process is shown below.

<1.発生磁場変動分の検出>
固定磁電変換素子7により、変換器9を通して磁束発生源5の発生磁場の変動によって生じる出力変化を演算部で検出する。
信号増幅部8の信号増幅率をG倍とする。磁場変動によって固定磁電変換素子7の出力電圧がΔV7変化すると、信号増幅部8を介して出力される電圧はΔVt=GΔV7変化する。この変化分ΔVtをA/D変換器等から構成される変換器を通して演算部で検出する。これにより、ΔB=ΔVt/ksGから変化した磁束密度を計算できる。ここで、変換器の検出分解能は、上記の補正したい変化を十分検出できるものでなければならない。
<1. Detection of generated magnetic field fluctuations>
The fixed magnetoelectric conversion element 7 detects the output change caused by the fluctuation of the magnetic field generated by the magnetic flux generation source 5 through the converter 9 by the calculation unit.
The signal amplification factor of the signal amplification unit 8 is set to G times. When the output voltage of the fixed magnetoelectric conversion element 7 changes by ΔV7 due to the magnetic field fluctuation, the voltage output through the signal amplifier 8 changes by ΔVt = GΔV7. This change ΔVt is detected by the arithmetic unit through a converter including an A / D converter or the like. Thereby, the magnetic flux density changed from ΔB = ΔVt / ksG can be calculated. Here, the detection resolution of the converter must be capable of sufficiently detecting the change to be corrected.

<2.感度係数の補正>
磁束発生源5の発生磁場が変化すると、外力によって生じる作用部1と磁束発生源5との相対位置の変化により生じる磁電変換素子の出力も変化する。
よって、磁電変換素子の出力から正確な外力の値を算出するためには、センサ出力の感度係数kz,kyを発生磁場に応じて修正する必要がある。前述したように、変化した分の磁束変化ΔBに基づき、変動前の磁束密度をBとすると、発生磁場の変動の影響を含んだ補正後の感度係数は{(B−ΔB)/B}×kzおよび{(B−ΔB)/B}×kyとすればよい。なお、発生磁場に変動がない場合(ΔB=0)の場合は、(B−ΔB)/Bの値は1となり、上記の感度係数はそれぞれkz、kyとなる。
<2. Correction of sensitivity coefficient>
When the magnetic field generated by the magnetic flux generation source 5 changes, the output of the magnetoelectric conversion element generated by the change in the relative position between the action unit 1 and the magnetic flux generation source 5 generated by an external force also changes.
Therefore, in order to calculate an accurate external force value from the output of the magnetoelectric conversion element, it is necessary to correct the sensitivity coefficients kz and ky of the sensor output according to the generated magnetic field. As described above, if the magnetic flux density before the change is B based on the changed magnetic flux change ΔB, the corrected sensitivity coefficient including the influence of the change in the generated magnetic field is {(B−ΔB) / B} ×. kz and {(B−ΔB) / B} × ky may be used. When there is no change in the generated magnetic field (ΔB = 0), the value of (B−ΔB) / B is 1, and the above sensitivity coefficients are kz and ky, respectively.

<3.オフセット処理>
磁束発生源5の発生磁場が変化することにより、固定磁電変換素子7の出力が変換器9に入力される際の基準電圧値からΔVt変化したとする。差分であるΔVt分に基づき変位磁電変換素子4のオフセット分ΔVoffを演算部で計算する。変位磁電変換素子4の出力電圧がΔV4=kdΔB変化し、ΔVoff=GΔV4となる。ここで、kdは磁束変化量から出力電圧へ変換するための係数である。上記の発生磁場変動分の検出の項目にて述べたようにΔVtからΔBを算出できるため、ΔVoffが算出できる。このΔVoffをキャンセルするように調整器10により変位磁電変換素子4a,4bと接続された信号増幅部8へフィードバックする。これにより、固定磁電変換素子7の出力に基づいて変位磁電変換素子4のオフセットをリアルタイムに補正することができる。なお、磁束発生源5の発生磁場変動量が時間変化に対して軽微でリアルタイムに補正が必要でない場合には、変位磁電変換素子の基準電圧値(作用部1に外力が加わっていないときの電圧値)からの差分をキャンセルするようにしてもよい。
<3. Offset processing>
It is assumed that a change in the magnetic field generated by the magnetic flux generation source 5 changes ΔVt from the reference voltage value when the output of the fixed magnetoelectric conversion element 7 is input to the converter 9. Based on the difference ΔVt, the calculation unit calculates the offset ΔVoff of the displacement magnetoelectric transducer 4. The output voltage of the displacement magnetoelectric transducer 4 changes by ΔV4 = kdΔB, and ΔVoff = GΔV4. Here, kd is a coefficient for converting the magnetic flux change amount to the output voltage. Since ΔBt can be calculated from ΔVt as described in the item of detection of the generated magnetic field fluctuation, ΔVoff can be calculated. The regulator 10 feeds back to the signal amplifying unit 8 connected to the displacement magnetoelectric transducers 4a and 4b so as to cancel this ΔVoff. Thereby, based on the output of the fixed magnetoelectric conversion element 7, the offset of the displacement magnetoelectric conversion element 4 can be corrected in real time. In addition, when the amount of magnetic field fluctuation generated by the magnetic flux generation source 5 is slight with respect to time change and correction is not necessary in real time, the reference voltage value of the displacement magnetoelectric transducer (the voltage when no external force is applied to the action unit 1) You may make it cancel the difference from (value).

また、変換器9に入力できる信号範囲は特定のレンジに決められている。よって、変位磁電変換素子の出力にオフセットが生じるとセンサの検出できる範囲が狭まってしまう。上述のオフセット処理は、変換器9に入力可能な信号範囲を適切に使うためにも有意義である。   The signal range that can be input to the converter 9 is determined to be a specific range. Therefore, if an offset occurs in the output of the displacement magnetoelectric transducer, the range that can be detected by the sensor is narrowed. The offset processing described above is also meaningful in order to appropriately use the signal range that can be input to the converter 9.

<4.出力計算処理>
一方、発生磁場変動の補正を含んだ計算式は以下のように示される。ここで、kp=(B−ΔB)/Bは補正感度係数である。
Fz=kp×kz((B4a+B4b)−B7)
My=kp×ky(B4a−B4b)
変位磁電変換素子4a、4bのオフセットは変換器9に電気信号が入力される前に調整されるので演算部11による計算には影響を及ぼさないことがわかる。よって、補正を行なわない場合と比べて補正感度係数を乗算するだけで容易に発生磁場の変動分を補正し、正確な外力やモーメントを算出することができる。
また本発明の方法は磁束発生源の発生する発生磁場そのものに基づいて感度係数を補正するため、従来の温度補償回路を用いた方式では補正できなかった経年変化による発生磁場の変化など、温度以外の原因で生じる発生磁場の変化にも対応できる。
<4. Output calculation processing>
On the other hand, a calculation formula including correction of the generated magnetic field variation is shown as follows. Here, kp = (B−ΔB) / B is a correction sensitivity coefficient.
Fz = kp × kz ((B4a + B4b) −B7)
My = kp × ky (B4a-B4b)
It can be seen that the offsets of the displacement magnetoelectric transducers 4a and 4b are adjusted before the electric signal is input to the converter 9, and therefore do not affect the calculation performed by the calculation unit 11. Therefore, it is possible to easily correct the fluctuation of the generated magnetic field by simply multiplying the correction sensitivity coefficient as compared with the case where correction is not performed, and to calculate an accurate external force and moment.
Further, since the method of the present invention corrects the sensitivity coefficient based on the generated magnetic field itself generated by the magnetic flux generating source, other than temperature, such as a change in the generated magnetic field due to secular change that could not be corrected by the method using the conventional temperature compensation circuit. It can also cope with changes in the generated magnetic field caused by

既に述べたように、磁気式の力覚センサにおいては外力によって生じる出力変化および磁束発生源5の発生磁場の変動によって生じる出力変化を精度良く検出することが望まれる。そのためには、磁束の変化量が最も検出しやすい箇所に磁電変換素子を配置することが重要である。そのための検討を行った。   As already described, in a magnetic force sensor, it is desired to accurately detect an output change caused by an external force and an output change caused by a change in the magnetic field generated by the magnetic flux generation source 5. For this purpose, it is important to dispose the magnetoelectric conversion element at a location where the change amount of the magnetic flux is most easily detected. We studied for that.

図3、図4に磁場シミュレーションの結果を示す。シミュレーションはZ軸対称の磁束発生源5に関する2次元静磁場モデルで行った。発生する磁場も左右対称のため、図3および図4中では磁極の中心線を左端に描き、右半分のみ図示している。   3 and 4 show the results of the magnetic field simulation. The simulation was performed with a two-dimensional static magnetic field model related to the magnetic flux generation source 5 symmetric with respect to the Z axis. Since the generated magnetic field is also symmetrical, the center line of the magnetic pole is drawn at the left end in FIGS. 3 and 4 and only the right half is shown.

図3は空気中にZ軸方向の厚み4mm、X軸方向の厚み2mmの磁束発生源5を配置しており、図4は磁束発生源5にZ軸方向の厚み4mm、X軸方向の厚み1mmの磁性体13が巻き付けてある。
ここで、磁束発生源には残留磁束密度1.4T、保磁力1000kA/mのNd−Fe−B磁石の特性を設定し、磁性体の比透磁率は5000に設定した。
In FIG. 3, a magnetic flux generation source 5 having a thickness of 4 mm in the Z-axis direction and a thickness of 2 mm in the X-axis direction is arranged in the air. FIG. A 1 mm magnetic body 13 is wound.
Here, the characteristics of an Nd—Fe—B magnet having a residual magnetic flux density of 1.4 T and a coercive force of 1000 kA / m were set as the magnetic flux generation source, and the relative permeability of the magnetic material was set to 5000.

磁束の変化量が最大となる箇所は、磁束線が最も密な箇所である。磁束発生源5単体(図3)、磁束の流れを制御できる磁性体を設置した(図4)、いずれの結果からも磁束線が最も密な箇所、つまり、磁束の変化量が最も取れる箇所は磁束発生源5の磁極端面付近であることが了解される。   The place where the amount of change in magnetic flux is the maximum is the place where the magnetic flux lines are the densest. The magnetic flux source 5 alone (FIG. 3) and a magnetic body capable of controlling the flow of magnetic flux were installed (FIG. 4). From any of these results, the location where the magnetic flux lines are the densest, that is, the location where the amount of change in the magnetic flux can be obtained most It is understood that the magnetic flux generation source 5 is near the magnetic pole end face.

この結果に基づいて、固定磁電変換素子4a、4bと変位磁電変換素子7の配置箇所を検討する。固定磁電変換素子と変位磁電変換素子を同一基板上に実装することは困難である。よって、固定磁電変換素子と変位磁電変換素子を実装するための基板は分離しなければならず、少なくとも2枚の基板が必要である。   Based on this result, the arrangement locations of the fixed magnetoelectric transducers 4a and 4b and the displacement magnetoelectric transducer 7 are examined. It is difficult to mount the fixed magnetoelectric conversion element and the displacement magnetoelectric conversion element on the same substrate. Therefore, the substrate for mounting the fixed magnetoelectric conversion element and the displacement magnetoelectric conversion element must be separated, and at least two substrates are required.

磁束発生源の2つの磁極(N極、S極)の近傍には磁束線が密であり、磁極の近傍に磁電変換素子を設ければ、磁束発生源との相対変位の変化を敏感に検知することができることがわかった。   Magnetic flux lines are dense in the vicinity of the two magnetic poles (N pole and S pole) of the magnetic flux generation source. If a magnetoelectric transducer is provided in the vicinity of the magnetic pole, changes in relative displacement with the magnetic flux generation source can be detected sensitively. I found out that I can do it.

特に図3、図4に示したように棒状の磁束発生源5の磁極に端面を有する場合は、固定磁電変換素子7を一方の磁極の端面に固定し、また変位磁電変換素子4a、4bが他方の磁極と対向する位置に配置することができる。このような構成は、最も精度良く力および磁束発生源の発生磁場の変動を検出できる構造であることがわかる。   In particular, as shown in FIGS. 3 and 4, when the pole of the rod-shaped magnetic flux generation source 5 has an end face, the fixed magnetoelectric conversion element 7 is fixed to the end face of one of the magnetic poles, and the displacement magnetoelectric conversion elements 4a and 4b are It can arrange | position in the position facing the other magnetic pole. It can be seen that such a configuration is a structure that can detect the force and the fluctuation of the generated magnetic field of the magnetic flux generation source with the highest accuracy.

本発明は、産業用ロボットアームで用いる力覚センサとして好適である。   The present invention is suitable as a force sensor used in an industrial robot arm.

1 作用部
2 弾性体
3 変位磁電変換素子用実装基板
4a〜4b 変位磁電変換素子
5 磁束発生源
6 固定磁電変換素子用実装基板
7 固定磁電変換素子
8 信号増幅部
9 信号変換部
10 信号調整部
11 演算部
12 磁束線
13 磁性体
14 永久磁石
15a〜15b 磁電変換素子
16 ホール素子
DESCRIPTION OF SYMBOLS 1 Action part 2 Elastic body 3 Displacement magnetoelectric conversion element mounting board 4a-4b Displacement magnetoelectric conversion element 5 Magnetic flux generation source 6 Fixed magnetoelectric conversion element mounting board 7 Fixed magnetoelectric conversion element 8 Signal amplification part 9 Signal conversion part 10 Signal adjustment part DESCRIPTION OF SYMBOLS 11 Calculation part 12 Magnetic flux line 13 Magnetic body 14 Permanent magnet 15a-15b Magnetoelectric conversion element 16 Hall element

Claims (4)

作用部に受けた力によって変位可能な前記作用部と磁束発生源との相対位置に基づいて前記力を検知する磁気式力覚センサにおいて、
支持部材に弾性支持された作用部と、
前記作用部に固定された第一の磁電変換素子と、
前記第一の磁電変換素子に対向して配置された磁束発生源と、
前記磁束発生源に対して固定位置に配置された第二の磁電変換素子と、
前記第一の磁電変換素子の出力を、前記第二の磁電変換素子の出力に基づいて補正する演算処理部とを有することを磁気式力覚センサ。
In the magnetic force sensor that detects the force based on the relative position between the action part and the magnetic flux generation source that can be displaced by the force received by the action part,
An action part elastically supported by the support member;
A first magnetoelectric transducer fixed to the action part;
A magnetic flux generation source disposed opposite to the first magnetoelectric transducer;
A second magnetoelectric transducer disposed at a fixed position with respect to the magnetic flux generation source;
A magnetic force sensor comprising: an arithmetic processing unit that corrects an output of the first magnetoelectric conversion element based on an output of the second magnetoelectric conversion element.
前記演算処理部の演算結果を前記第一の磁電変換素子へフィードバックする調整器を有し、
あらかじめ定められた基準電圧値と、前記作用部に外力が加わっていないときの前記第二の磁電変換素子の出力による電圧値との差分に基づいて算出された前記第一の磁電変換素子のオフセットをキャンセルするフィードバックが、前記第一の磁電変換素子の出力に対して行われることを特徴とする請求項1項記載の磁気式力覚センサ。
An adjuster for feeding back the calculation result of the calculation processing unit to the first magnetoelectric transducer;
The offset of the first magnetoelectric conversion element calculated based on the difference between the predetermined reference voltage value and the voltage value due to the output of the second magnetoelectric conversion element when no external force is applied to the action portion The magnetic force sensor according to claim 1, wherein feedback for canceling is performed on the output of the first magnetoelectric transducer.
前記演算処理部の演算結果を前記第一の磁電変換素子へフィードバックする調整器を有し、
磁束発生源の発生する磁場をB、前記第二の磁電変換素子の出力に基づいて算出された磁束発生源が発生する磁場の変動をΔBとしたとき、第一の磁電変換素子の出力を、(B−ΔB)/B倍するフィードバックが行なわれることを特徴とする請求項1記載の磁気式力覚センサ。
An adjuster for feeding back the calculation result of the calculation processing unit to the first magnetoelectric transducer;
When the magnetic field generated by the magnetic flux generation source is B, and the fluctuation of the magnetic field generated by the magnetic flux generation source calculated based on the output of the second magnetoelectric conversion element is ΔB, the output of the first magnetoelectric conversion element is 2. The magnetic force sensor according to claim 1, wherein feedback of (B- [Delta] B) / B times is performed.
前記第二の磁電変換素子は前記磁束発生源の一方の磁極近傍に配置され、前記第一の磁電変換素子は前記磁束発生源の他方の磁極近傍に設けられていることを特徴とする請求項1に記載の磁気式力覚センサ。   The second magnetoelectric conversion element is disposed near one magnetic pole of the magnetic flux generation source, and the first magnetoelectric conversion element is provided near the other magnetic pole of the magnetic flux generation source. 2. A magnetic force sensor according to 1.
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