JP2011096962A - Method of manufacturing and apparatus of manufacturing thin-film solar cell - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a method of manufacturing and an apparatus of manufacturing a thin-film solar cell that can improve throughput and a yield in manufacturing the thin-film solar cell. <P>SOLUTION: The method of manufacturing the thin-film solar cell includes: a predeposition step of conveying a monitor substrate 11 from a monitor substrate storing chamber 10 connected to a film making chamber 1 to the film making chamber 1 to perform predeposition in the film making chamber 1; a film making evaluation step of conveying the monitor substrate 11 on which a predeposition film 13 is formed in the predeposition step from the film making chamber 1 to the monitor substrate storing chamber 10 to perform measurement with respect to the predeposition film 13 as film making evaluation; and a product film making step of conveying a product substrate 4 to the film making chamber 1 through the predeposition step to form a semiconductor thin film on the product substrate 4 with a film making processing under a film making condition determined based on the film making evaluation. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a method and an apparatus for manufacturing a thin film solar cell including a semiconductor thin film.

  Photovoltaic power generation is expected as an alternative energy to thermal power generation using fossil fuels, and the production of solar power generation systems is increasing year by year. In the case of a bulk solar cell using a silicon substrate as a raw material, there is a concern that the manufacturing cost increases when the price of the silicon substrate increases due to a shortage of silicon wafers. For this reason, a thin-film silicon solar cell whose manufacturing cost does not depend on the supply amount of the silicon substrate has attracted attention.

  An amorphous silicon thin film solar cell, which is an example of a thin film silicon solar cell, includes an amorphous silicon power generation layer that functions as a photoelectric conversion layer. The amorphous silicon power generation layer is formed by laminating P-type and N-type amorphous silicon films doped with impurities and a non-doped I-type amorphous silicon film. Each layer of the amorphous silicon power generation layer is formed in a different film forming chamber of the plasma CVD apparatus in order to suppress deterioration of power generation characteristics due to cross contamination. The substrate is transferred between the film forming chambers in vacuum through the transfer chambers in order to prevent oxidation of the silicon surface due to atmospheric exposure. Conventionally, for the purpose of product quality control, a technique for measuring and managing the film thickness of a product substrate taken out from a CVD apparatus has been proposed (for example, see Patent Document 1).

JP 2003-65727 A

  Generally, the P-type and N-type amorphous silicon films are formed with a thickness of about one-tenth of the I-type amorphous silicon film. In the case of the technique of the above-mentioned Patent Document 1, it is possible to measure and manage the film thickness of the entire amorphous silicon power generation layer, while detecting the variation in film thickness for each amorphous silicon film constituting the amorphous silicon power generation layer. Not suitable for. Conventionally, as a method for managing the film forming quality of each amorphous silicon film, a method of measuring a film thickness and film quality by periodically performing dummy film formation on a monitor substrate for each film forming chamber has been adopted. . However, in order to transfer the monitor substrate from the transfer chamber to the film forming chamber and perform dummy film formation, it is necessary to temporarily stop the processing of the product substrate. In addition, since it is difficult to detect sudden process abnormalities, the process continues with abnormal device settings and processes until abnormalities are discovered in the solar cell characteristic inspection in the final manufacturing process. The case where it is done arises. For this reason, the problem that the final manufacturing yield of a thin film solar cell falls also arises.

  This invention is made | formed in view of the above, Comprising: It aims at obtaining the manufacturing method and manufacturing apparatus of a thin film solar cell which can improve the through-put of thin film solar cell manufacture, and the improvement of a yield.

  In order to solve the above-described problems and achieve the object, the present invention transports a monitor substrate from a monitor substrate storage chamber connected to a film forming chamber to the film forming chamber, and performs predeposition in the film forming chamber. A predeposition step to be performed, and the monitor substrate on which the predeposition film is formed in the predeposition step is transported from the film forming chamber to the monitor substrate storage chamber, and the predeposition film is targeted A film formation evaluation process for carrying out the measurement as a film formation evaluation, and a film formation process under the film formation conditions determined based on the film formation evaluation by transporting the product substrate to the film formation chamber that has undergone the predeposition process. And a product film forming step of forming a semiconductor thin film on the product substrate.

  According to the present invention, it is possible to improve the throughput of thin film solar cell manufacturing and to improve the yield.

FIG. 1 is a flowchart for explaining a procedure for manufacturing an amorphous silicon thin film solar cell by the method for manufacturing a thin film solar cell according to the embodiment. FIG. 2 is a block diagram showing a schematic configuration of a plasma CVD apparatus which is a thin film solar cell manufacturing apparatus. FIG. 3 is a diagram for explaining the transport procedure of the product substrate in the plasma CVD apparatus. FIG. 4 is a schematic cross-sectional view of a film forming chamber and a monitor substrate storage chamber connected to the film forming chamber. FIG. 5 is a flowchart for explaining the processing procedure of the monitor substrate in the film forming chamber A and the monitor substrate storage chamber A, and the flowchart for explaining the processing procedure of the product substrate in the film forming chamber A. FIG. 6 is a schematic cross-sectional view of the film forming chamber in which the process shown in FIG. 5 has been performed.

  Below, based on drawing, the embodiment of the manufacturing method and manufacturing apparatus of a thin film solar cell concerning the present invention is described in detail.

Embodiment.
FIG. 1 is a flowchart for explaining a procedure for manufacturing an amorphous silicon thin film solar cell by the method for manufacturing a thin film solar cell according to the embodiment. An amorphous silicon thin film solar cell is configured by sequentially laminating a transparent conductive film, an amorphous silicon power generation layer, a transparent electrode film, and a metal electrode film on a product substrate.

  In step S1, a glass substrate as a product substrate is prepared and cleaned. In step S2, a transparent electrode film is formed on the glass substrate. The transparent electrode film obtained here constitutes the lower electrode layer. In step S3, the transparent electrode film is patterned into a cell shape by laser scribing.

  In steps S4, S5, and S6, a P-type amorphous silicon film doped with phosphorus (P), a non-doped I-type amorphous silicon film, and an N-type amorphous silicon film doped with boron (B) are sequentially formed to produce amorphous silicon power. Form a layer. The P-type amorphous silicon film, the I-type amorphous silicon film, and the N-type amorphous silicon film are semiconductor thin films formed by the plasma CDV method. In step S7, the amorphous silicon power generation layer is patterned into a cell shape by laser scribing.

  In step S8, a transparent electrode film is formed. The transparent electrode film obtained here constitutes an optical confinement layer. In step S9, a metal electrode film is formed. The metal electrode film obtained here constitutes the upper electrode layer. In step S10, the metal electrode film is patterned into a cell shape by laser scribing. Through the above manufacturing process, a structure in which the lower electrode layer and the upper electrode layer are connected in series between adjacent cells is formed. Thereafter, the substrate cleaning (step S11) and the solar cell characteristic inspection (step S12) are performed, and the process proceeds to the mounting process.

  Plasma CVD apparatuses for manufacturing amorphous silicon thin film solar cells include an in-line method in which a plurality of film forming chambers are linearly connected and a multi-chamber method in which a plurality of film forming chambers are arranged around a transfer chamber. The in-line method is relatively easy to transport the substrate, but stops the entire apparatus when a partial maintenance is required. On the other hand, the multi-chamber method is excellent in productivity because product processing can be continued during maintenance of any film forming chamber.

  FIG. 2 is a block diagram showing a schematic configuration of a plasma CVD apparatus which is a thin film solar cell manufacturing apparatus. The plasma CVD apparatus used in this embodiment is a cluster type CVD apparatus that employs a multi-chamber system. The plasma CVD apparatus includes a transfer chamber, three film forming chambers A, B, and C, and a substrate carry-in / out chamber. The film forming chambers A, B, and C and the substrate loading / unloading chamber are provided around the transfer chamber.

  The film forming chamber A is a space for forming a P-type amorphous silicon film. The film forming chamber B is a space for forming an I-type amorphous silicon film. The film forming chamber C is a space for forming an N-type amorphous silicon film. The film forming chambers A, B, and C are each connected to a transfer chamber via a gate valve. In the figure, the gate valve is indicated by “x”.

  The transfer chamber is a space for transferring the substrate between the film forming chambers A, B, and C and the substrate loading / unloading chamber. In the transfer chamber, a transfer robot (not shown) operable in vacuum is provided. The transfer robot in the transfer chamber transfers the product substrate between the transfer chamber, the film forming chambers A, B, and C and the substrate carry-in / out chamber. The substrate loading / unloading chamber is a space for loading and unloading the substrate into and from the transfer chamber. The substrate loading / unloading chamber is connected to the transfer chamber via a gate valve.

  The film forming chamber A is connected to the monitor substrate storage chamber A via a gate valve provided separately from the transfer chamber side. The film forming chamber B is connected to the monitor substrate storage chamber B via a gate valve provided separately from the transfer chamber side. The film forming chamber C is connected to the monitor substrate storage chamber C via a gate valve provided separately from the transfer chamber side. Monitor substrates are stored in the monitor substrate storage chambers A, B, and C, respectively. Each of the monitor substrate storage chambers A, B, and C is provided with a film formation evaluation apparatus (film formation evaluation means) that performs film formation evaluation. Film forming condition control devices (film forming condition control means) for controlling the film forming conditions are provided corresponding to the respective film forming chambers A, B, and C.

  Note that the plasma CVD apparatus is not limited to the one having three film forming chambers around the transfer chamber, and may be any apparatus having a plurality of film forming chambers. The film forming condition control device only needs to be able to control the film forming conditions of each film forming chamber, and is not limited to being provided for each film forming chamber.

  FIG. 3 is a diagram for explaining the transport procedure of the product substrate in the plasma CVD apparatus. Here, the conveyance procedure of the product substrate will be described together with the procedure shown in FIG. The product substrate on which the transparent electrode film has been formed (step S2) and has undergone laser scribing (step S3) is placed in the substrate carry-in / out chamber. When the product substrate is installed in the substrate loading / unloading chamber, the substrate loading / unloading chamber is evacuated. The product substrate is vacuum transferred from the substrate loading / unloading chamber to the film forming chamber A via the transfer chamber by a transfer robot in the transfer chamber. In the film forming chamber A, a P-type amorphous silicon film is formed by a film forming process (step S4).

  The product substrate on which the P-type amorphous silicon film is formed is vacuum transferred from the film forming chamber A to the film forming chamber B through the transfer chamber by the transfer robot. In the film forming chamber B, an I-type amorphous silicon film is formed by a film forming process (step S5). The product substrate on which the I-type amorphous silicon film is formed is vacuum transferred from the film forming chamber B to the film forming chamber C through the transfer chamber by the transfer robot. In the film forming chamber C, an N-type amorphous silicon film is formed by a film forming process (step S6). The product substrate on which the N-type amorphous silicon film is formed is vacuum transferred from the film forming chamber C to the substrate loading / unloading chamber by the transfer robot through the transfer chamber. The product substrate on which the amorphous silicon power generation layer is formed in this manner is taken out from the substrate carry-in / out chamber, and the process proceeds to step S7 and subsequent steps.

  In the film forming chambers A, B, and C, each time the product substrate is carried in, the steps of predeposition, product film formation, and cleaning are repeated. The predeposition performed before product film formation is a process of depositing a silicon film in advance on the inner wall of the film formation chamber or the surface of the discharge electrode for the purpose of stabilizing the atmosphere in the film formation chamber. Cleaning performed after product deposition is a process that removes the silicon film on the inner wall of the deposition chamber and the surface of the discharge electrode by etching for the purpose of pre-deposition and prevention of peeling of the silicon film deposited by product deposition. is there.

As cleaning, for example, plasma cleaning using fluorine plasma in which a fluorine-based gas such as NF ₃ , F ₂ , ClF ₃ or the like is introduced into the film forming chamber and discharged between the high-frequency electrodes, or provided in the film forming chamber. Radical cleaning using fluorine radicals generated by a radical generator is used.

  FIG. 4 is a schematic cross-sectional view of the film forming chamber 1 and the monitor substrate storage chamber 10 connected to the film forming chamber 1. The configuration described here is applied to any combination of the film forming chamber A and the monitor substrate storage chamber A, the film forming chamber B and the monitor substrate storage chamber B, the film forming chamber C and the monitor substrate storage chamber C. The discharge electrode 2 provided in the film forming chamber 1 is connected to a high frequency power source 3 of 13.56 MHz.

  The gas supply pipe 6 supplies a process gas to the inside of the discharge electrode 2. As the process gas, for example, a dilution gas composed of a silane-based gas such as monosilane and hydrogen gas, and phosphine or diborane are used as a doping gas. The process gas supplied from the gas supply pipe 6 into the discharge electrode 2 is introduced into the film forming chamber 1 through a plurality of gas inlets 7 formed in the discharge electrode 2.

  The stage 5 is provided to face the discharge electrode 2. A substrate which is a target for film formation in the film forming chamber 1 is transferred into the film forming chamber 1 and placed on the stage 5. FIG. 4 shows a state where the product substrate 4 is placed on the stage 5. The pressure in the film forming chamber 1 is kept constant by the conductance valve 8.

  The monitor substrate storage chamber 10 is connected to the film forming chamber 1 through a gate valve 9. The monitor substrate storage chamber 10 is provided with a transfer robot 12 operable in a vacuum. The transfer robot 12 provided in the monitor substrate storage chamber 10 functions as a monitor substrate transfer means for transferring the monitor substrate 11 between the monitor substrate storage chamber 10 and the film forming chamber 1. FIG. 4 shows a state where the monitor substrate 11 on which the predeposition film 13 is formed is placed on the transfer robot 12 in the monitor substrate storage chamber 10.

  The monitor substrate 11 is a substrate for dummy film formation in the film formation chamber 1, and is prepared for each film formation chamber 1. The monitor substrate 11 is a plate-like member made of glass, for example, and has the same size as the product substrate 11. The film thickness measuring device 14 and the sheet resistance measuring device 15 provided in the monitor substrate storage chamber 10 constitute a film forming evaluation apparatus (see FIG. 2).

  FIG. 5 is a flowchart for explaining the processing procedure of the monitor substrate in the film forming chamber A and the monitor substrate storage chamber A, and the flowchart for explaining the processing procedure of the product substrate in the film forming chamber A. Here, the processing procedure will be described using the reference numerals in FIG. 4 as appropriate. In step S21, predeposition is performed in the film forming chamber A with the monitor substrate 11 placed on the stage 5 of the film forming chamber A (predeposition step). A predeposition film 13 is formed on the monitor substrate 11 by predeposition.

  The monitor substrate 11 on which the predeposition film is formed in step S21 is transferred from the film forming chamber A to the monitor substrate storage chamber A by the transfer robot 12 in step S22. In step S23, as the film formation evaluation, the film thickness and film quality of the predeposition film 13 are measured in the monitor substrate storage chamber A (film formation evaluation process). The film thickness is measured by a film thickness measuring instrument 14 which is a film thickness measuring means. The film quality is, for example, a sheet resistance measured by a sheet resistance measuring device 15 that is a film quality measuring unit. At this time, the film thickness distribution and the film quality distribution of the predeposition film 13 in the surface of the monitor substrate 11 are measured by moving any one of the film thickness measurement device 14, the sheet resistance measurement device 15, and the monitor substrate 11. It is also good to get.

The film forming condition control device (see FIG. 2) provided corresponding to the film forming chamber A determines the film forming conditions of the product substrate 4 in step S24. The film forming conditions are determined based on the film forming evaluation in step S23. The film forming condition control device controls the film forming conditions according to the film forming evaluation by the film forming evaluation device. For example, when it is detected that the predeposition film 13 is thinner than usual, it is expected that the film forming rate of the CVD apparatus is lowered. In this case, the film forming condition control device selects a process recipe having a film forming time longer than usual for the film forming process to be subsequently performed, thereby forming a silicon film film formed on the product substrate 4. The thickness can be kept almost constant. Parameters adjusted based on the measurement results of the film thickness and film quality of the predeposition film 13 include film formation time, SiH ₄ flow rate, H ₂ flow rate, doping gas (B ₂ H ₆ , PH ₃ etc.) flow rate, There are membrane pressure and stage temperature.

  When the monitor substrate 11 is stored in the monitor substrate storage chamber A by the transfer in step S22, the product substrate 4 is transferred from the transfer chamber to the film forming chamber A by the transfer robot in the transfer chamber (see FIG. 2) in step S31. Is done. In step S32, a P-type amorphous silicon film is formed on the product substrate 4 by a film forming process (product film forming process). The film forming process is performed under the film forming conditions determined in step S24. The product substrate 4 on which the formation of the P-type amorphous silicon film is completed is transferred from the film forming chamber A to the transfer chamber in step S33. Thereby, the process in the film forming chamber A for the product substrate 4 is finished. The product substrate 4 transferred from the film forming chamber A to the transfer chamber shifts to processing in the film forming chambers B and C.

  When the product substrate 4 is taken out from the film forming chamber A in step S33, the transfer robot 12 transfers the monitor substrate 11 for which film forming evaluation has been completed from the monitor substrate storage chamber A to the film forming chamber A in step S25. After the monitor substrate 11 is moved from the monitor substrate storage chamber A to the film forming chamber A, in step S26, the film forming chamber A is cleaned by performing an etching process (cleaning process). The predeposition film 13 on the monitor substrate 11 is removed by cleaning. Thereby, the process of the monitor substrate 11 performed in parallel with the process of the product substrate 4 is finished.

  The monitor substrate 11 from which the predeposition film 13 is removed and placed in the film forming chamber A is used as it is for predeposition (step S21) for processing the next product substrate 4. In the film forming chamber B, the monitor substrate storage chamber B, the film forming chamber C, and the monitor substrate storage chamber C, the same processing as that of the film forming chamber A and the monitor substrate storage chamber A is performed. The above processing is repeated every time the product substrate 4 is carried into the plasma CVD apparatus.

  FIG. 6 is a schematic cross-sectional view of the film forming chamber 1 in which the processing shown in FIG. 5 has been performed. Here, a part of the configuration of the film forming chamber 1 shown in FIG. 4 is simplified. (A) in FIG. 6 represents a state immediately after cleaning the film forming chamber 1 (step S26). A monitor substrate 11 from which the predeposition film 13 has been removed is placed on the stage 5.

  (B) represents a state in which predeposition is performed in the film forming chamber 1. A predeposition film 13 is formed on the monitor substrate 11, the surface of the discharge electrode 2, and the inner wall of the film forming chamber 1. After predeposition, the monitor substrate 11 is taken out from the film forming chamber 1, and the product substrate 4 is carried onto the stage 5 in the film forming chamber 1.

  (C) represents a state in which the film forming process has been performed in the film forming chamber 1 after the product substrate 4 is carried into the film forming chamber 1. A silicon film 16 is formed on the product substrate 4. A laminated film 17 in which a silicon film is laminated on the predeposition film 13 is formed on the surface of the discharge electrode 2 and the inner wall of the film forming chamber 1. After the film forming process, the product substrate 4 is taken out from the film forming chamber 1, and the monitor substrate 11 after the film forming evaluation is returned onto the stage 5 of the film forming chamber 1 as shown in FIG. Thereafter, by cleaning the inside of the film forming chamber 1 together with the surface of the monitor substrate 11, the discharge electrode 2, the laminated film 17 on the inner wall of the film forming chamber 1, and the predeposition film 13 on the monitor substrate 11 are removed. It is returned to the state.

  In the present embodiment, the film forming conditions can be determined using the predeposition film 13 formed immediately before product film formation as the object for film formation evaluation. By making it possible to control the film forming conditions for each film forming chamber 1 to the optimum state, the film forming quality for each silicon film can be managed. In addition, by measuring the film thickness and film quality in parallel with the processing such as conveyance of the product substrate 4 and making it possible to determine the film forming conditions, it is possible to suppress a decrease in manufacturing throughput. By providing the film thickness measuring device 14 and the sheet resistance measuring device 15 in the monitor substrate storage chamber 10, it is possible to perform measurement for film formation evaluation without taking the monitor substrate 11 into the atmosphere.

  The transfer of the monitor substrate 11 uses a transfer robot 12 provided separately from the transfer robot in the transfer chamber, and the movement of the monitor substrate 11 is limited between the film forming chamber 1 and the monitor substrate storage chamber 10. Throughput can be improved. The predeposition film 13 on the monitor substrate 11 after the measurement is removed along with the cleaning of the film forming chamber 1 so that the monitor substrate 11 can be used repeatedly, and the preparation and setting of the monitor substrate 11 for the next measurement can be performed. It is possible to save time and effort separately. As described above, there are effects that the throughput of the thin film solar cell manufacturing is improved and the yield is improved.

  The monitor substrate 11 is not limited to a glass substrate, and may be made of, for example, quartz, alumina ceramics, or metal. The material of the monitor substrate 11 is desirably a material having excellent etching resistance against the cleaning plasma. Thereby, the replacement frequency of the monitor substrate 11 due to deterioration can be reduced. The monitor substrate 11 may be formed by coating the surface of these materials with a material used for the transparent electrode film of the product substrate 4, for example, tin oxide or zinc oxide. Thereby, the film thickness and film quality can be measured under conditions close to the film formation on the product substrate 4, and the film formation conditions can be more appropriately controlled.

  The thin film solar cell to be manufactured in this embodiment is not limited to the case where an amorphous silicon film is used for the photoelectric conversion layer. For example, a thin film solar cell using silicon germanium or microcrystalline silicon for the photoelectric conversion layer, or a tandem thin film silicon solar cell in which these thin film silicon solar cells are stacked may be used. In either case, the same effect as in the present embodiment can be obtained.

  The film quality of the predeposition film 13 to be measured by the film quality measuring means is not limited to sheet resistance, but other characteristics, for example, optical characteristics such as light transmittance and light reflectance of the predeposition film 13 Also good. When measuring light transmittance or light reflectance, for example, a spectrophotometer is used as the film quality measuring means. When a microcrystalline silicon film is formed, the film quality may be a crystallization rate of a film that can be measured by, for example, Raman spectroscopy.

  For the film thickness measurement, it is desirable to use a technique capable of measuring in a relatively short time, for example, an optical film thickness measurement method such as ellipsometry or optical interferometry. By reducing the time required for measurement, the throughput can be further improved. The film formation evaluation may be performed by measuring at least one of the film thickness and the film quality, and is not limited to the measurement by measuring both the film thickness and the film quality.

  As mentioned above, the manufacturing method and manufacturing apparatus of the thin film solar cell which concern on this invention are suitable for manufacture of a thin film solar cell provided with the photoelectric converting layer which consists of a silicon thin film.

DESCRIPTION OF SYMBOLS 1 Film forming room 4 Product board 5 Stage 9 Gate valve 10 Monitor board storage room 11 Monitor board 12 Transfer robot 13 Predeposition film 14 Film thickness measuring instrument 15 Sheet resistance measuring instrument

Claims (8)

A pre-deposition step of transferring the monitor substrate from the monitor substrate storage chamber connected to the film forming chamber to the film forming chamber and performing predeposition in the film forming chamber;
The monitor substrate on which the predeposition film is formed in the predeposition step is transported from the film formation chamber to the monitor substrate storage chamber, and measurement for the predeposition film is performed as film formation evaluation. Film formation evaluation process;
A product substrate that transports a product substrate to the film forming chamber that has undergone the predeposition step and forms a semiconductor thin film on the product substrate by a film forming process under film forming conditions determined based on the film forming evaluation. A membrane process;
The manufacturing method of the thin film solar cell characterized by including.   2. The method for manufacturing a thin-film solar cell according to claim 1, wherein at least one of a film thickness and a film quality of the predeposition film is measured as the film formation evaluation. A cleaning step of cleaning the film forming chamber by an etching process after taking out the product substrate that has undergone the film forming process from the film forming chamber;
The cleaning process includes removing the predeposition film on the monitor substrate by moving the monitor substrate from the monitor substrate storage chamber to the film forming chamber and performing the etching process. Item 3. The method for producing a thin-film solar cell according to Item 1 or 2.   The method for manufacturing a thin-film solar cell according to any one of claims 1 to 3, wherein the monitor substrate includes at least one of glass, quartz, alumina ceramics, and metal. A film forming chamber for the film forming process;
A monitor substrate storage chamber connected to the film forming chamber and storing a monitor substrate;
Transporting the monitor substrate from the monitor substrate storage chamber to the film forming chamber, and performing predeposition in the film forming chamber;
The monitor substrate on which the predeposition film is formed by the predeposition is transferred from the film formation chamber to the monitor substrate storage chamber, and the measurement for the predeposition film is performed as a film formation evaluation.
A semiconductor thin film is formed on the product substrate by the film forming process under the film forming conditions determined based on the film forming evaluation.
An apparatus for manufacturing a thin-film solar cell.   6. The apparatus for manufacturing a thin film solar cell according to claim 5, further comprising monitor substrate transfer means for transferring the monitor substrate between the monitor substrate storage chamber and the film forming chamber. A film forming evaluation means for performing the film forming evaluation;
The thin film solar cell manufacturing apparatus according to claim 5, further comprising a film forming condition control unit that controls the film forming condition in accordance with the film forming evaluation performed by the film forming evaluation unit.   The thin film solar cell manufacturing apparatus according to claim 7, wherein the film forming evaluation unit includes at least one of a film thickness measuring unit that measures a film thickness and a film quality measuring unit that measures a film quality.

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