JP2011091266A - Semiconductor device and method for manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a chip laminate type thin semiconductor device which mounts a plurality of semiconductor devices on a wiring board and is superior in high-frequency characteristics, and to provide a method for manufacturing the same. <P>SOLUTION: The semiconductor device comprises: a wiring board 2 having a first main surface 2a, a second main surface 2b corresponding to a back surface of the first main surface 2a and a through-hole 3 in which an opening areas at a side closer to the first main surface 2a than a step 4 formed in an intermediate position in the thickness direction is larger than an opening area at a side closer to the second main surface 2b than the step 4; a first semiconductor device 6 electrically connected to the wiring board 2; and a second semiconductor device 7 electrically connected to the first semiconductor device 6 and having a smaller surface area than that of the first semiconductor device 6. The first semiconductor device 6 is arranged in the through-hole 3 at the first main surface 6 side so that its periphery is fixed to the step 4 and the second semiconductor device 7 is fixed to an surface opposed to the step 4 of the first semiconductor device 6 and arranged in the through-hole 3 at the second main surface 2b. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a chip stacked type semiconductor device in which a plurality of semiconductor elements are mounted on one wiring board, and a method for manufacturing the same.

  As electronic devices have become more multifunctional, smaller and thinner in recent years, semiconductor devices in which a semiconductor element is mounted on a wiring board are also becoming smaller and thinner. As a semiconductor device that achieves such an object, a so-called BGA (Ball Grid Array) type package in which solder balls as external electrodes for electrical connection are arranged in a matrix on the lower surface side of the semiconductor device, An LGA (Land Grid Array) type package in which external electrodes are arranged in a matrix is known.

  In such BGA type and LGA type semiconductor devices, it is necessary to improve the structure of a wiring board on which a semiconductor element is mounted in order to realize a thin semiconductor device. As a semiconductor device in which a semiconductor element is mounted on a wiring board, a structure in which a plurality of semiconductor elements are accommodated in the thickness direction of the wiring board has been proposed (see Patent Document 1).

  FIG. 10 is a cross-sectional configuration diagram showing a schematic configuration of a conventional semiconductor device described in Patent Document 1. In FIG.

  As shown in FIG. 10, a conventional semiconductor device 50 includes a first insulating layer 51 in which a recess 52 is formed and a second insulating layer 53 in which a recess 54 is formed. 55 is formed. A wiring pattern (not shown) is formed on the surface of each of the first insulator layer 51 and the second insulator layer 53. Here, the opening surface area of the recess 54 of the second insulator layer 53 is set larger than the opening surface area of the recess 52 of the first insulator layer 51, and the entire recess formed in the wiring board 55. As a result, a step 56 is formed around the opening 52 formed in the first insulator layer 51.

  A plurality of first bumps 58 are formed on the bottom surface 57 of the concave portion 52 of the first insulator layer 51, and an electrode (not shown) is connected to the first bump 58, so that the second A semiconductor element 59 is mounted in the recess 52 of the first insulator layer 51. In addition, a plurality of second bumps 60 are formed on the surface of the stepped portion 56, and electrodes (not shown) are connected to the second bumps 60, so that the surface area of the stepped portion 56 is larger than that of the second semiconductor element 59. A large first semiconductor element 61 is mounted in the recess 54 of the second insulator layer 53.

  The recess 52 of the first insulator layer 51 and the recess 54 of the second insulator layer 53 are filled with a sealing resin 62 so as to cover the second semiconductor element 59 and the first semiconductor element 61. Has been. Further, the surface of the first insulator layer 51 on the side where the second insulator layer 53 is not laminated, that is, the back surface of the first main surface 55 a on the opening side of the recess formed in the wiring substrate 55. On the second main surface 55b, a plurality of external electrodes 63 for connecting the semiconductor device 50 to an external circuit board such as a mother board (not shown) are formed. These external electrodes 63 are formed of a first bump 58, a second bump 60, and a first insulator layer 51 and a second insulator by a via electrode (not shown) or a through electrode such as a through hole. It is connected to a wiring pattern (not shown) formed in the layer 53.

  Next, a method for manufacturing the conventional semiconductor device 50 will be described.

  First, as shown in FIG. 11A, a wiring board 55 is formed by laminating a first insulator layer 51 and a second insulator layer 53 having a wiring pattern (not shown) formed on the surface. A recess 52 is formed in the first insulator layer 51 and a recess 54 is formed in the second insulator layer 53. Since the opening area of the recess 54 is larger than the recess 52, the inside of the opening of the recess 54 is A stepped portion 56 is formed on the surface.

  A plurality of first bumps 58 are formed on the bottom surface 57 of the recess 52, and a plurality of second bumps 60 are formed on the stepped portion 56. The first bump 58 and the second bump 60 are connected to the external electrode 63 formed on the second main surface 55b of the wiring board 55 by a through electrode such as a via or a through hole (not shown). .

  Next, as shown in FIG. 11 (b), the corresponding first bump 58 and an electrode (not shown) are opposed to each other inside the recess 52 formed in the first insulator layer 51 of the wiring board 55. Thus, the second semiconductor element 59 is mounted.

  Further, as shown in FIG. 11C, the corresponding second bump 60 and an electrode (not shown) are opposed to each other inside the recess 54 formed in the second insulator layer 53 of the wiring board 55. Thus, the first semiconductor element 61 is mounted.

  And as shown in FIG.11 (d), the sealing resin 62 is filled into the clearance gap part of the recessed part 52 and the recessed part 54. FIG.

  Although not shown in FIG. 11, each of the first insulator layer 51 and the second insulator layer 53 has a plurality of recesses 52 and recesses 54, and a sealing resin 62 is injected therein. After that, the semiconductor device 50 as shown in FIG. 10 can be manufactured by cutting into individual semiconductor elements with a rotating blade (not shown) and separating them into individual pieces.

JP 2008-300366 A

  The conventional semiconductor device 50 described with reference to FIGS. 10 and 11 includes a recess 52 of the first insulator layer 51 formed on the wiring substrate 55 with a stepped portion 56 and a second insulator layer 52. The first semiconductor element 59 and the second semiconductor element 61 can be accommodated in the recesses 54, respectively. Therefore, the semiconductor device 50 can be reduced in thickness.

  However, when further thinning of the semiconductor device is required, the conventional semiconductor device 50 has very little room for handling.

  That is, in order to further reduce the thickness of the conventional semiconductor device 50, the wiring substrate 55 itself is reduced in thickness, and the first semiconductor element 61 and the second semiconductor housed in the recesses 52 and 54 are accommodated. The element 59 must be thinned. However, it is difficult to reduce the thickness of the semiconductor element because there are problems such as cracking during transportation due to a decrease in the strength of the wafer and there is a limit to the thickness that can be reduced. In addition, in order to reduce the thickness of the wiring board 55 without reducing the thickness of the semiconductor elements 59 and 61 accommodated in the wiring board 55, other than the recesses 52 and 54 in which the semiconductor elements 59 and 61 are accommodated. In addition to thinning the portion, a predetermined thickness is required to form a wiring pattern on the wiring board 55, and a certain thickness is also required for bumps for connecting the wiring pattern and the semiconductor element. Therefore, it is difficult to make the wiring board 55 thinner than a certain thickness.

  Further, in the conventional semiconductor device 50, the electrical connection between the first semiconductor element 61 and the second semiconductor element 59 is performed by the first bump 58, the wiring pattern formed on the wiring substrate 55, and the second Since it is performed via the bump 60, the wiring distance between the semiconductor elements 59 and 61 becomes long. For this reason, there is a concern that it is impossible to avoid a reduction in high-frequency characteristics due to noise generation.

  The present invention solves the above-described conventional problems and provides a thin semiconductor device having excellent high-frequency characteristics and a manufacturing method thereof in a chip stack type semiconductor device in which a plurality of semiconductor elements are mounted on one wiring board. Objective.

  In order to solve the above problems, a semiconductor device of the present invention has a first main surface and a second main surface corresponding to the back surface of the first main surface, and is formed at an intermediate portion in the thickness direction. A wiring board in which a through-hole having a larger opening area on the first main surface side than the stepped portion is larger than an opening area on the second main surface side than the stepped portion; A first semiconductor element connected to the first semiconductor element; and a second semiconductor element having a smaller surface area than the first semiconductor element, electrically connected to the first semiconductor element, An element is disposed in the through hole on the first main surface side with its peripheral portion fixed to the stepped portion, and the second semiconductor element faces the stepped portion of the first semiconductor element. Fixed to the surface to be disposed and disposed inside the through hole on the second main surface side To.

  Also, in the method for manufacturing a semiconductor device of the present invention, a second semiconductor element having a smaller surface area than the first semiconductor element is fixed and electrically connected to the first semiconductor element to form a connection body. A step of forming a connection body, a first main surface, and a second main surface corresponding to the back surface of the first main surface, wherein a step portion is formed at an intermediate portion in the thickness direction; The first semiconductor element at the step portion of the wiring board having a through hole having an opening area on the first main surface side larger than the opening area on the second main surface side than the step portion. The first semiconductor element is disposed closer to the first main surface than the stepped portion in the through hole, and the second semiconductor portion is disposed more than the second stepped portion. A connection body housing step for housing the connection body so that the second semiconductor element is disposed on the main surface side; Characterized in that it.

  In the semiconductor device of the present invention, since the second semiconductor element is fixed to the surface of the first semiconductor element facing the stepped portion, the fixing portion between the second semiconductor element and the wiring board is not required, and two semiconductors It is possible to reduce the thickness of the wiring substrate containing the element. In addition, since the second semiconductor element and the first semiconductor element are directly electrically connected, the wiring length is shortened, the influence of noise is reduced, and a semiconductor device having excellent high-frequency characteristics can be obtained.

  In addition, the method for manufacturing a semiconductor device of the present invention includes a connecting body forming step for connecting the first semiconductor element and the second semiconductor element, the first semiconductor element having a large surface area in a through-hole portion having a large surface area, In addition, the semiconductor device of the present invention that can realize a reduction in thickness and high frequency characteristics can be easily achieved by including a connecting body housing step of housing and fixing the second semiconductor element having a small surface area in the through hole portion having a small surface area. Can be manufactured.

1 is a cross-sectional structure diagram illustrating a schematic configuration of a semiconductor device according to a first embodiment of the present invention. 1 is a cross-sectional configuration diagram showing a schematic configuration when a semiconductor device according to a first embodiment of the present invention is a BGA type semiconductor device. It is a section lineblock diagram showing a flow of a process of a manufacturing method of the present invention when manufacturing a semiconductor device concerning a 1st embodiment of the present invention. It is a section lineblock diagram showing composition of a modification of a semiconductor device concerning a 1st embodiment of the present invention. It is a section lineblock diagram showing composition of other modifications of a semiconductor device concerning a 1st embodiment of the present invention. FIG. 6 is a cross-sectional structure diagram illustrating a schematic configuration of a semiconductor device according to a second embodiment of the present invention. It is a section lineblock diagram showing a flow of a process of a manufacturing method of the present invention when manufacturing a semiconductor device concerning a 2nd embodiment of the present invention. It is a section lineblock diagram showing composition of a modification of a semiconductor device concerning a 2nd embodiment of the present invention. It is a section lineblock diagram showing composition of another modification of a semiconductor device concerning a 2nd embodiment of the present invention. It is a cross-sectional block diagram which shows the structure of the conventional semiconductor device. It is sectional structure drawing which shows the flow of the process of the manufacturing method of the conventional semiconductor device.

  The semiconductor device of the present invention has a first main surface and a second main surface corresponding to the back surface of the first main surface, and the first step is formed more than the step portion formed in the middle portion in the thickness direction. A wiring board in which a through-hole having an opening area on the main surface side of 1 larger than the opening area on the second main surface side than the stepped portion is formed, and a first electrically connected to the wiring board And a second semiconductor element having a surface area smaller than that of the first semiconductor element and electrically connected to the first semiconductor element, wherein the first semiconductor element includes the step portion. A peripheral portion thereof is fixed to be disposed inside the through hole on the first main surface side, and the second semiconductor element is fixed to a surface of the first semiconductor element facing the stepped portion. It arrange | positions in the said through-hole by the side of said 2nd main surface.

  In the semiconductor device of the present invention, the first semiconductor element having a large surface area is accommodated in the through hole having a large opening area, and the second semiconductor element having a small surface area is disposed in the through hole having a small opening area. Thus, the peripheral portion of the first semiconductor element is fixed to the step portion of the through hole, and the second semiconductor element is fixed to the surface facing the step portion of the first semiconductor element. For this reason, a fixing portion between the second semiconductor element and the wiring board is not required, and a thin wiring board accommodating the two semiconductor elements can be realized. In addition, since the second semiconductor element and the first semiconductor element are directly electrically connected, the wiring length can be shortened as compared with the conventional case where the second semiconductor element and the first semiconductor element are connected via the wiring substrate. Thus, it is possible to obtain a semiconductor device with excellent high-frequency characteristics that is less affected by noise.

  In the configuration of the semiconductor device of the present invention, the surface of the first semiconductor element that is located on the opposite side of the surface that faces the stepped portion is located on the same plane as the first main surface of the wiring board. It is preferable. In addition, a surface of the second semiconductor element that is opposite to the surface facing the first semiconductor element is located on the same plane as the second main surface of the wiring board. preferable. By doing in this way, the thickness of a wiring board can be made thinner and thickness reduction of a semiconductor device can be realized.

  Further, it is preferable that the first semiconductor element and the second semiconductor element are electrically connected by a thin metal wire. By doing so, the first semiconductor element and the second semiconductor element are firmly and easily fixed, for example, with an adhesive or the like, and a general wire bonding technique is used as a method for connecting the semiconductor elements. The first semiconductor element and the second semiconductor element can be electrically connected.

  Furthermore, it is preferable that the second semiconductor element and the first semiconductor element are electrically connected by a bump. In this way, the first semiconductor element and the second semiconductor element can be physically fixed and electrically connected at the same time, and the first semiconductor element and the second semiconductor element are connected to each other. As compared with the case of wire bonding, a thin and small semiconductor device in which the thickness and surface area of the wiring board are reduced can be obtained.

  Moreover, it is preferable to further include a sealing resin body filled in the through hole of the wiring board. By doing in this way, the semiconductor element accommodated in the wiring board can be protected, and the semiconductor element and the wiring board can be more firmly fixed.

  In addition, the first semiconductor element can have an active surface on a side opposite to the surface facing the stepped portion, and the second semiconductor element faces the first semiconductor element. The surface located on the opposite side of the surface to be activated can be the active surface. By doing so, heat generated from the active surface can be easily released to the outside, and an optical member such as a light receiving cell is arranged on the active surface, so that an optical function equipped with an optical element can be achieved. A semiconductor device having the same can be obtained.

  In the method of manufacturing a semiconductor device according to the present invention, the first semiconductor element is connected to the second semiconductor element having a smaller surface area than the first semiconductor element and is electrically connected to form a connection body. A body forming step, a first main surface, and a second main surface corresponding to the back surface of the first main surface, wherein a step portion is formed in an intermediate portion in the thickness direction, The opening area of the first main surface side of the wiring board having a through hole larger than the opening area of the second main surface side than the stepped portion of the first semiconductor element in the stepped portion. Peripheral portions are fixed and electrically connected, and the first semiconductor element is disposed closer to the first main surface than the stepped portion in the through hole, and the second main portion is positioned more than the stepped portion. A connecting body housing step for housing the connecting body so that the second semiconductor element is disposed on the surface side. That.

  The method for manufacturing a semiconductor device according to the present invention includes a connection body forming step for fixing and electrically connecting the first semiconductor element and the second semiconductor element, and the formed connection body in the through hole of the wiring board. Since it is accommodated and the peripheral portion of the first semiconductor element is connected to the stepped portion formed in the through hole, the semiconductor device of the present invention that is thin and excellent in high-frequency characteristics can be easily manufactured.

  In the method for manufacturing a semiconductor device according to the present invention, it is preferable that the first semiconductor element and the second semiconductor element are electrically connected by a thin metal wire. By doing so, the first semiconductor element and the second semiconductor element are firmly and easily fixed, for example, with an adhesive or the like, and a general wire bonding technique is used as a method for connecting the semiconductor elements. The first semiconductor element and the second semiconductor element can be electrically connected.

  Further, it is preferable that the first semiconductor element and the second semiconductor element are electrically connected by a bump. In this way, the first semiconductor element and the second semiconductor element can be physically fixed and electrically connected at the same time, and the first semiconductor element and the second semiconductor element are connected to each other. Thus, a thinner and smaller semiconductor device can be obtained than when wire bonding is performed.

  Furthermore, it is preferable to further include a sealing step of filling a sealing resin body in the through hole of the wiring board. By doing in this way, the semiconductor element accommodated in the wiring board can be protected, and the adhesion between the semiconductor element and the wiring board can be further strengthened.

  Hereinafter, a semiconductor device and a manufacturing method thereof according to the present invention will be described with reference to the drawings.

(First embodiment)
FIG. 1 is a cross-sectional configuration diagram showing the configuration of the semiconductor device according to the first embodiment of the present invention.

  As shown in FIG. 1, the semiconductor device 1 of this embodiment includes a wiring board 2 having a first main surface 2a and a second main surface 2b corresponding to the back surface of the first main surface 2a. A first semiconductor element 6 and a second semiconductor element 7 are disposed inside a through hole 3 formed in the wiring board 2.

  The wiring board 2 is made of an insulating material, and a plurality of layers of wiring patterns (not shown) are formed on the first main surface 2a, the second main surface 2b of the wiring board 2, and an intermediate portion in the thickness direction of the wiring board 2. It is formed on at least a part of the surface of the intermediate layer (not shown). Further, in order to connect the wiring patterns formed as the respective layers to the wiring substrate 2, through electrodes (not shown) such as well-known vias and through holes are formed therein.

  The wiring substrate 2 is formed with a through-hole 3 that is continuous over the first main surface 2a and the second main surface 2b. The through hole 3 has a stepped portion 4 formed at an intermediate portion in the thickness direction of the wiring substrate 2, and the opening area of the through hole portion 3 a on the first main surface side 2 a of the wiring substrate 2 with respect to the stepped portion 4. However, it is formed so as to be larger than the opening area of the through-hole portion 3b on the second main surface side 2b of the wiring board 2 than the stepped portion 4.

  The first semiconductor element 6 is disposed so that the peripheral portion thereof faces the step portion 4 formed in the through hole 3 of the wiring substrate 2, and the first main surface 2 a side of the wiring substrate 2 than the step portion 5. It is accommodated in the through-hole part 3a with a large opening area. In the semiconductor device 1 of the present embodiment, the first semiconductor element 6 and the wiring board 2 include the connection electrode (not shown) of the first semiconductor element 6 and the surface of the step part 4 of the through hole 3, that is, the step part 4. By connecting the bumps 5 formed on the first main surface 2a side of the wiring board 2 of this circuit board, physical fixation and electrical connection are simultaneously performed.

  The second semiconductor element 7 is fixed to the surface 6 a facing the stepped portion 5 of the first semiconductor element 6 with an adhesive 8, and is wired more than the stepped portion of the through hole 3 formed in the wiring substrate 2. The substrate 2 is accommodated in a through hole portion 3b having a small opening area on the second main surface 2b side.

  Here, as is apparent from FIG. 1, in the semiconductor device 1 of the present embodiment, all the portions in the thickness direction of the second semiconductor element 7 are accommodated in the through hole portion 3b having a small opening area. Whether or not it is determined by the thickness of the bump 5 connected to the first semiconductor element 6 and the thickness of the adhesive 8 for fixing the first semiconductor element 6 and the second semiconductor element 7 to each other. In the semiconductor device of the present invention, since there are no restrictions on the thicknesses of the bump 5 and the adhesive 8, the second semiconductor element 7 is accommodated in the through-hole portion 3b having a small opening area. A concept showing a state in which at least a part of the second semiconductor element 7 in the thickness direction is accommodated in the through-hole portion 3b having a small opening area, and a part of the second semiconductor element 7 in the thickness direction is It is not a concept that excludes being accommodated in the through-hole portion 3a having a large opening area. Further, according to the present invention, a part of the first semiconductor element 6 and the second semiconductor element 7 in the thickness direction exceeds the thickness direction of the wiring board 2 so that the first main surface 2a and the second main surface 2a It does not exclude protruding from the main surface 2b.

  In the semiconductor device 1 of the present embodiment shown in FIG. 1, an electrode pad (not shown) of the second semiconductor element 7 and a connection pad of the first semiconductor element 6 are connected by a wire 9 that is a thin metal wire. The electrical connection between the first semiconductor element 6 and the second semiconductor element 7 is formed. The second semiconductor element 7 is connected to a wiring pattern (not shown) of the wiring board 2 through the first semiconductor element 6.

  In the semiconductor device 1 of the present embodiment, the sealing resin body 10 made of epoxy resin or the like is filled in the through hole 3 of the wiring board 2. Thus, by filling the through-hole 3 with the resin sealing body 10, the semiconductor elements 6 and 7 can be firmly fixed to the wiring board 2 and can be protected from an external impact.

  FIG. 2 is a diagram showing a configuration when the semiconductor device 1 of the present embodiment is connected to an external circuit board such as a mother board (not shown).

  2A shows a case where the ball electrode 11 is formed on a wiring pattern (not shown) formed on the second main surface 2b of the wiring board 2, and FIG. The cross-sectional structure at the time of forming the ball electrode 11 in the wiring pattern which is not shown in figure formed in the main surface 2a is shown.

  Thus, by forming the ball electrode on the wiring pattern formed on the surface of the wiring board 2, the semiconductor device 1 of the present invention can be mounted on the external circuit board as a BGA type semiconductor device.

  Next, a method for manufacturing the semiconductor device of this embodiment will be described.

  FIG. 3 is a cross-sectional configuration diagram showing a process flow when the method for manufacturing a semiconductor device of the present invention is applied as the method for manufacturing the semiconductor device 1 according to the first embodiment of the present invention shown in FIG. is there.

  First, as shown in FIG. 3A, a wiring board 2 having a through hole 3 for accommodating the first semiconductor element 6 and the second semiconductor element 7 is prepared. The through-hole 3 formed in the wiring substrate 2 has a through-hole portion 3a having a large area of an opening located on the first main surface 2a side due to the step portion 4 formed in the intermediate portion in the thickness direction of the wiring substrate 2. And a through-hole portion 3b having a small area of the opening located on the second main surface 2b side. The wiring board 2 can be formed by laminating a plurality of insulator layers having wiring patterns formed on the surface thereof as shown in the prior art. There is no restriction in the semiconductor device of the invention and the manufacturing method thereof.

  Next, as shown in FIG. 3B, the first semiconductor element 6 and the second semiconductor element 7 are fixed with an adhesive 8.

  Next, as shown in FIG. 3C, an electrode pad (not shown) of the second semiconductor element 7 and a connection pad of the first semiconductor element 6 are connected by a wire 9 which is a thin metal wire. In this way, the electrical connection between the first semiconductor element 6 and the second semiconductor element 7 is formed, and the connection body 12 of the semiconductor element is formed. A combination of the steps shown in FIG. 3B and FIG. 3C is a connection body forming step.

  Next, as shown in FIG. 3D, the semiconductor element connection body electrically connected by the wire 9 is accommodated in the through hole 3 of the wiring board 2. At this time, the connection electrode (not shown) formed in the peripheral portion of the first semiconductor element 6 is connected to the bump 5 disposed on the surface of the step portion 5 formed in the through hole of the wiring substrate 2. Physical fixation and electrical connection between the circuit board 2 and the first semiconductor element 6 can be performed simultaneously. Further, by connecting a connection electrode (not shown) formed on the first semiconductor element 6 and a bump formed on the surface of the stepped portion 5, the first semiconductor element 6 has an opening area of the wiring substrate 2. The second semiconductor element 7 is accommodated in the through-hole portion 3b in which the opening area of the wiring board 2 is small.

  Next, as shown in FIG. 3 (e), a sealing resin body 10 such as an epoxy resin is filled in the space inside the through hole 3 (3 a, 3 b) of the wiring board 2 to penetrate the wiring board 2. The first semiconductor element 6 and the second semiconductor element 7 are sealed inside the hole 3.

  Although not shown in the figure, after the resin sealing body 7 is filled, the wiring board 2 is cut into individual pieces by joining each semiconductor element to a rotary blade or the like, and shown in FIG. Such a semiconductor device 1 can be manufactured.

  As shown in FIG. 2, when the semiconductor device 1 of the present embodiment is a BGA type semiconductor device, the first main surface 2a or the second main surface 2a of the wiring substrate 2 of the semiconductor device 1 separated into pieces. A solder ball is attached to a wiring pattern (not shown) formed on one of the main surfaces 2b to form a ball electrode.

  In the semiconductor device 1 and the manufacturing method thereof according to the first embodiment of the present invention shown in FIG. 1, the case where the resin sealing body 10 is filled in the gap portion of the wiring substrate 2 has been described. Whether or not to seal the semiconductor elements 6 and 7 housed in 2 is not an essential requirement in the present invention, and it is necessary to protect the semiconductor elements 6 and 7 and the wires 9 connecting them with the resin sealing body 10. When there is no, filling of the resin sealing body 10 can be omitted.

  As described above, according to the semiconductor device 1 of the present embodiment, the second semiconductor element 7 is fixed to the surface 6 a of the first semiconductor element 6 facing the step portion 5 of the wiring substrate 2 by the adhesive 8. As a result, there is no need to perform a fixed connection between the second semiconductor element 7 and the wiring board 2. Therefore, the bottom surface itself of the circuit board 55 and the second bumps 58 that connect the bottom surface and the second semiconductor element, which are necessary for the semiconductor device 50 of the prior art shown in FIG. Since it becomes unnecessary, the thinned semiconductor device 1 in which the two semiconductor elements 6 and 7 are accommodated and mounted therein can be obtained without extremely thinning the semiconductor elements 6 and 7.

  Further, in the semiconductor device 1 of the present embodiment, the first semiconductor element 6 and the second semiconductor element 7 are directly electrically connected by the wire 9. Therefore, as in the conventional semiconductor device 50 shown in FIG. 10, the second semiconductor element 59 is connected to the wiring board 55, and the first semiconductor element 61 is connected via the wiring pattern or via of the wiring board 55. The wiring length can be shortened compared with the case of connecting to the semiconductor device, and particularly when the mounted semiconductor element is a semiconductor element that operates at a high frequency, it has a high frequency characteristic that is less affected by noise and the like. A semiconductor device can be obtained.

  Further, by using the above-described method for manufacturing a semiconductor device of the present invention, the semiconductor device according to the present invention that is thin and has high-frequency characteristics can be easily manufactured.

(Deformation form)
Next, a modification of the semiconductor device according to the present embodiment will be described with reference to FIGS.

  FIG. 4A is a cross-sectional configuration diagram showing a first modification of the semiconductor device of this embodiment.

  In the semiconductor device 100a according to the first modification of the present embodiment shown in FIG. 4A, the first semiconductor element 6 is positioned on the side opposite to the surface 6a facing the step portion 5 of the wiring board 2. The surface 6b to be arranged is arranged so as to be flush with the first main surface 2a of the wiring board 2.

  By doing in this way, the semiconductor device 100a according to the first modification of the present embodiment further includes the circuit board 2 as compared with the basic configuration of the semiconductor device 1 of the present embodiment shown in FIG. The thickness can be reduced, and a further reduction in thickness as a semiconductor device can be realized.

  In this case, as shown in FIG. 4B, the surface 7 b of the second semiconductor element 7 opposite to the surface 7 a facing the first semiconductor element 6 is the second main element of the wiring substrate 2. It can be the same surface as the surface 2b. At this time, the wire 9 connecting the second semiconductor element 7 and the first semiconductor element 6 protrudes from the surface 7b of the second semiconductor element 7, that is, the second main surface 2b of the wiring board, and covers this. In some cases, the sealing resin body 10 may protrude from the second main surface 2 b of the wiring board 2. However, even in such a case, for example, as shown in FIG. 4B, the ball electrode 11 for connecting to the external circuit board is provided on the second main surface 2b of the wiring board 2. By forming the thickness to be larger than the height of the protruding portion of the sealing resin body 10 from the second main surface of the wiring board 2, the semiconductor device 100b can be connected and mounted on the external circuit board satisfactorily. it can.

  As described above, the surfaces 6b and 7b of the semiconductor elements 6 and 7 accommodated in the wiring substrate 2 that are opposite to the surfaces 6a and 7a facing each other, the two main surfaces 2a of the wiring substrate 2, By making 2b the same surface, it is possible to obtain the semiconductor devices 100a and 100b that are further reduced in thickness.

  FIG. 5 is a cross-sectional configuration diagram showing a second modification of the semiconductor device of this embodiment.

  In the second modification shown in FIG. 5, the surface of at least one of the semiconductor elements 6 and 7 accommodated in the wiring board 2 is exposed without being covered with the sealing resin body 10.

  FIG. 5A is a cross-sectional configuration diagram illustrating a configuration of a semiconductor device 100c according to a second modification.

  As shown in FIG. 5A, in the semiconductor device 100c according to the second modification of the present embodiment, the first semiconductor 6 serving as an active surface on which the integrated circuit of the second semiconductor element 7 is formed. A surface 7 b located on the opposite side to the surface facing the surface is not covered with the sealing resin body 10 and is exposed in the opening formed in the second main surface 2 b of the wiring board 2. By doing so, it is possible to easily dissipate heat from the active surface of the second semiconductor element 7 that is likely to become high temperature during operation, and it is possible to obtain a semiconductor device having excellent reliability with respect to the environmental temperature.

  Further, by not covering the surface 7b on which the active surface of the second semiconductor element 7 is formed with the sealing resin body 10, the semiconductor element having an optical function including a light receiving cell as the second semiconductor element 7 It can be.

  FIG. 5B is a schematic cross-sectional configuration diagram showing the configuration of such a semiconductor device having a semiconductor element that is a light receiving element having a light receiving cell on an active surface.

  As shown in FIG. 5B, the surface of the second semiconductor element 7, which is an optical element having a light receiving cell (not shown) on the surface 7 b that is the active surface, is not covered with the sealing resin 10. And the glass 13 is affixed on the 2nd main surface 2b of the wiring board 2, and the semiconductor device 100d can comprise an image sensor, for example.

  As the first semiconductor element 6 in the semiconductor device 100d having the second semiconductor element 7 that is a light receiving element, an LSI that can form a system with the light receiving element may be employed.

  Next, as a case where the semiconductor element to be mounted is a light receiving element, the case where the first semiconductor element 6 is a light receiving element will be described with reference to FIG.

  As shown in FIG. 5C, in the semiconductor device 100e in which the mounted first semiconductor element 6 is a light receiving element, the first semiconductor element is formed in the opening of the first main surface 2a of the wiring board 2. 6 is exposed from the sealing resin body 10. The exposed surface 6b, which is the surface opposite to the surface facing the step portion 5 of the first semiconductor element 6, is the active surface. For this reason, a through electrode 14 is provided in the first semiconductor element 6, a connection electrode (not shown) connected to the bump 5 connected to the wiring substrate 2 formed on the surface 6 a of the first semiconductor element, A connection pad (not shown) to which a wire 9 connected to the semiconductor element 7 is connected is electrically connected to an integrated circuit such as a light receiving cell formed on the surface 6b which is an active surface.

  Similarly to the case where the second semiconductor element 7 shown in FIG. 5B is a light receiving element, the glass 13 is attached to the first main surface 2a of the wiring board.

  Thus, in the various modifications of the first embodiment of the present invention shown in FIGS. 5A, 5B, and 5C, two semiconductor elements are provided on the wiring board. In a semiconductor device to be housed and mounted, in addition to the basic operation and effect of the present invention that the semiconductor device is thin and has high frequency characteristics, the heat dissipation of the mounted semiconductor element can be increased, and the light receiving element can be used as the semiconductor element. These various optical elements can be employed, and a further effect that a semiconductor device having wider functionality can be realized.

(Second Embodiment)
Next, as a second embodiment of the semiconductor device of the present invention, the semiconductor device according to the first embodiment described above is different from the semiconductor device according to the first embodiment described above in the method of fixing the second semiconductor element to the first semiconductor element. Will be described.

  FIG. 6 is a cross-sectional configuration diagram of a semiconductor device 200 according to the second embodiment of the present invention.

  As shown in FIG. 6, the semiconductor device 200 according to the second embodiment includes a first main surface 21a and a second main surface 21b corresponding to the back surface of the first main surface 21a. 21 and a first semiconductor element 25 and a second semiconductor element 26 which are disposed inside a through hole 22 formed in the wiring substrate 21. Note that the semiconductor device 200 of this embodiment has the same structure as the semiconductor device 1 shown in FIG. 1 as the first embodiment and the wiring board 2 having the through holes 22 in which the step portions 23 are formed. Therefore, the detailed description is abbreviate | omitted.

  In the semiconductor device 200 according to the second embodiment, the first semiconductor element 25 is disposed so that the peripheral portion thereof faces the step portion 23 formed in the through hole 22 of the wiring substrate 21. Is also accommodated in a through-hole portion 22a having a large opening area on the first main surface 21a side of the wiring board 21. The first semiconductor element 25 and the wiring board 21 are physically fixed by connection electrodes (not shown) of the first semiconductor element 25 and bumps 24 formed on the surface of the step portion 23 of the through hole 22. Electrical connection is made at the same time.

  The second semiconductor element 26 is flip-chip mounted by bumps 27 via connection electrodes (not shown) disposed on the surface 26a facing the surface 25a facing the step portion 23 of the first semiconductor element 25, One semiconductor element 25 is physically fixed and electrically connected simultaneously.

  Next, a method for manufacturing the semiconductor device of the second embodiment will be described.

  FIG. 7 is a cross-sectional configuration diagram showing a flow of steps when the semiconductor device manufacturing method of the present invention is applied as a method of manufacturing the semiconductor device 200 according to the second embodiment of the present invention shown in FIG.

  First, as shown in FIG. 7A, the wiring board 21 is prepared. As described above, the configuration of the wiring board 21 in this embodiment is the same as that of the wiring board 2 in the first embodiment. Detailed description will be omitted.

  Next, as shown in FIG. 7B, the first semiconductor element 25 and the second semiconductor element 26 are flip-chip mounted via bumps 27 to form a semiconductor element bonded body 29. The process shown in FIG. 7B is a connection body forming process in the method for manufacturing the semiconductor device 200 according to the present embodiment.

  Next, as illustrated in FIG. 7C, the semiconductor element bonded body 29 electrically connected by flip chip mounting is accommodated in the through hole 22 of the wiring substrate 21. At this time, connection electrodes (not shown) formed in the peripheral portion of the first semiconductor element 25 are connected to the bumps 24 disposed on the surface of the step portion 23 formed in the through hole 22 of the wiring substrate 21. The first semiconductor element 25 is formed in the through hole portion 22a having a large opening area located on the first main surface 21a side of the wiring substrate 21 with respect to the step portion 23 in the through hole 22, and the second semiconductor element 26 is Each of the through holes 22 is accommodated in a through hole portion 22b having a smaller opening area located on the second main surface 21b side of the wiring substrate 21 than the stepped portion 23.

  Next, as shown in FIG. 7 (d), a sealing resin body 28 such as an epoxy resin is filled in the gap inside the through hole 22 of the wiring board 21, and the inside of the through hole 22 of the wiring board 21 is filled. The first semiconductor element 25 and the second semiconductor element 26 are sealed.

  Although not shown in the manufacturing method in the present embodiment, after the resin sealing body 28 is filled, the wiring substrate 21 is cut into individual semiconductor element bonded units by a rotating blade or the like. Thus, the semiconductor device 200 as shown in FIG. 6 can be manufactured.

  Further, a solder ball is attached to a wiring pattern (not shown) formed on the first main surface 21a or the second main surface 21b of the wiring substrate 21 of the separated semiconductor device 200 shown in FIG. And connecting to an external circuit board, a BGA type semiconductor device as shown in FIGS. 2A and 2B in the first embodiment is manufactured as the semiconductor device of this embodiment. can do.

  In the semiconductor device 200 according to the present embodiment, the sealing resin body 28 may not be used if there is no need to protect the semiconductor elements 25 and 26 to be mounted.

  As described above, in the semiconductor device 200 according to the present embodiment, the first semiconductor element 25 and the second semiconductor element 26 accommodated and mounted in the wiring board 21 are flip-chip mounted, so that FIG. The wires used in the first semiconductor device 1 shown are not necessary. Therefore, the second semiconductor element 26 and the first semiconductor element 25 can be easily connected, and it is not necessary to secure a predetermined loop height necessary for wire connection. Further reduction in thickness can be realized, and problems such as the wire protruding from the wiring board 21 can be prevented.

  Further, a connection pad for wire-connecting the second semiconductor element 26 around the region where the second semiconductor element 26 is mounted on the surface 25a of the first semiconductor element 25 on the side facing the step portion 23. Therefore, the surface area of the first semiconductor element 25 can be reduced. Therefore, the semiconductor device 200 can be reduced in surface area.

  Further, by directly flip-chip connecting the first semiconductor element 25 and the second semiconductor element 26, the wiring length between the first semiconductor element 25 and the second semiconductor element 26 can be further shortened. Therefore, further improvement of the high frequency characteristics can be realized.

(Deformation form)
Next, a modification of the semiconductor device according to the present embodiment will be described with reference to FIGS.

  FIG. 8 is a cross-sectional configuration diagram showing a first modification of the semiconductor device of this embodiment.

  In the semiconductor device 200a according to the first modification of the present embodiment shown in FIG. 8, the surface 25b located on the opposite side of the surface 25a facing the step portion 23 of the first semiconductor element 25 is the wiring substrate 21. The first main surface 21a is flush with the first main surface 21a. Further, the surface 26 b of the second semiconductor element 26 located on the opposite side of the surface 26 a facing the first semiconductor element 25 forms the same surface as the second main surface 21 b of the wiring substrate 21. ing.

  In this way, the surfaces 25b and 26b located outside the semiconductor elements 25 and 26 accommodated and mounted in the through hole 23 are the same as the first main surface 21a and the second main surface 21b of the wiring board. As a result, the wiring board 21 can be significantly reduced in thickness, and the semiconductor device 200a that is further reduced in thickness can be realized. In particular, in the case of the semiconductor device of the present embodiment, a wire for connecting the second semiconductor element 26 to the first semiconductor element 25 is not necessary, and a highly reliable thin semiconductor device can be obtained.

  FIG. 9A and FIG. 9B are cross-sectional configuration diagrams showing further modifications of the semiconductor device according to the present embodiment.

  In the semiconductor device 200b shown in FIG. 9A, a solder ball is attached to a wiring pattern (not shown) formed on the second main surface 21b of the wiring substrate 21 to form a ball electrode 30, which is formed on the semiconductor device 200b. As an external terminal.

  By doing so, a BGA type semiconductor device can be formed. However, as shown in FIG. 9A, the surface 26a of the second semiconductor element 26 facing the first semiconductor element 25 is defined as The surface 26 b located on the opposite side is also exposed as the same surface as the second main surface 21 b of the wiring substrate 21. When the active surface of the second semiconductor element 26 is the surface 26a on the side facing the first semiconductor element 25, the through electrode 29 is formed in the second semiconductor element 26, whereby the second semiconductor element 26 is formed. The surface 26 b of the element 26 can be used as a connection electrode formation surface with the external circuit board in the second semiconductor element 26. Therefore, the ball electrode 30 is similarly formed on the exposed surface 26 b of the second semiconductor element 26.

  The configuration shown in FIG. 9A is merely an example, and it is not essential that the active surface of the second semiconductor element 26 is the surface 26 a facing the first semiconductor element 25. It goes without saying that by forming a through electrode in the second semiconductor element 26, the active surface of the second semiconductor element can be a surface 26 b opposite to the surface 26 a facing the first semiconductor element 25. Yes.

  Also, in the semiconductor device 200c according to another modification shown in FIG. 9B, unlike the one illustrated in FIG. 9A, solder balls are attached to the first main surface 21a of the wiring board 21. Thus, the ball electrode 30 is formed to constitute an external terminal, thereby forming a BGA type semiconductor device 200c. In this case, since the surface 25b of the first semiconductor element 25 opposite to the surface 25a facing the second semiconductor element 26 is exposed, the through electrode 32 is formed in the first semiconductor element 25. A ball electrode 30 serving as an external terminal is formed at one end thereof. As in the case of the semiconductor device 200b according to the second modification shown in FIG. 9A, the active surface of the first semiconductor element 25 is the surface 25a facing the second semiconductor element 26. And the surface 25b positioned on the opposite side may be any surface.

  9A and 9B, the exposed surfaces 25b and 26b of the semiconductor elements 25 and 26 mounted in the wiring board 21 also serve as external terminals. Since an electrode can be formed, the effect that the freedom degree in a connection with an external board | substrate improves can be show | played.

  In the semiconductor device according to the present embodiment, the active surface of the semiconductor element is positioned on the first main surface or the second main surface side of the wiring substrate by appropriately forming a through electrode or the like in the semiconductor element. By forming a light receiving cell or the like on the active surface, a semiconductor device such as an image sensor can be obtained using the semiconductor element as the light receiving element.

  In each of the embodiments of the present invention described above, the case where the semiconductor device is a BGA package has been described as an example. However, the semiconductor device of the present invention is not limited to this, and wiring such as an LGA package is used. The present invention can be widely applied to semiconductor devices using a substrate.

  In addition, as described above, in the manufacturing method of the present invention, the connection body forming step for fixing and connecting the first semiconductor element and the second semiconductor element, and the connection body is accommodated in the wiring board and connected. However, the method for manufacturing the semiconductor device of the present invention is not limited to this characteristic manufacturing method of the present invention. It goes without saying that the semiconductor device of the present invention can be obtained by first housing the first semiconductor element on the wiring board and fixing and then connecting the second semiconductor element to the first semiconductor element. Yes.

  In each of the above embodiments, only the case where there are two semiconductor elements accommodated in the wiring board has been described. However, the semiconductor device and the manufacturing method thereof according to the present invention are not limited to this, and three or more semiconductor elements are included. This semiconductor device can be implemented as a semiconductor device having a configuration in which the semiconductor element is accommodated in a wiring board and a method for manufacturing the same.

  The semiconductor device and the manufacturing method thereof according to the present invention are useful as a chip stack type semiconductor device in which a plurality of semiconductor elements are housed and mounted on a wiring board, and a manufacturing method thereof.

DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Wiring board 2a 1st main surface 2b 2nd main surface 3 Through-hole 4 Step part 5 Bump 6 1st semiconductor element 7 2nd semiconductor element 8 Adhesive 9 Wire 10 Sealing resin body 11 Ball Electrode 12 Connector 13 Glass

Claims (12)

A first main surface and a second main surface corresponding to the back surface of the first main surface;
A through-hole having an opening area closer to the first main surface than the stepped portion formed in the intermediate portion in the thickness direction is larger than an opening area closer to the second main surface than the stepped portion is formed. Wiring board,
A first semiconductor element electrically connected to the wiring board;
A second semiconductor element having a smaller surface area than the first semiconductor element, electrically connected to the first semiconductor element;
The first semiconductor element is disposed in the through hole on the first main surface side with its peripheral portion fixed to the stepped portion,
The semiconductor device, wherein the second semiconductor element is fixed to a surface of the first semiconductor element facing the stepped portion and disposed in the through hole on the second main surface side.   2. The semiconductor according to claim 1, wherein a surface of the first semiconductor element located on a side opposite to the surface facing the stepped portion is located on the same plane as the first main surface of the wiring board. apparatus.   2. The surface of the second semiconductor element that is located on the opposite side of the surface facing the first semiconductor element is located on the same plane as the second main surface of the wiring board. 2. The semiconductor device according to 2.   4. The semiconductor device according to claim 1, wherein the first semiconductor element and the second semiconductor element are electrically connected by a thin metal wire.   The semiconductor device according to claim 1, wherein the second semiconductor element and the first semiconductor element are electrically connected by a bump.   The semiconductor device according to claim 1, further comprising a sealing resin body filled in the through hole of the wiring board.   The semiconductor device according to claim 1, wherein the first semiconductor element has a surface located on a side opposite to a surface facing the stepped portion as an active surface.   The semiconductor device according to claim 1, wherein the second semiconductor element has an active surface on a surface opposite to a surface facing the first semiconductor element. A connection body forming step of fixing and electrically connecting a second semiconductor element having a surface area smaller than that of the first semiconductor element to the first semiconductor element to form a connection body;
A first main surface and a second main surface corresponding to the back surface of the first main surface, wherein a stepped portion is formed at an intermediate portion in the thickness direction, and the first main surface is more than the first stepped portion. The peripheral portion of the first semiconductor element is fixed to the step portion of the wiring board having a through hole having an opening area on the main surface side larger than the opening area on the second main surface side than the step portion. The first semiconductor element is disposed closer to the first main surface than the step in the through hole, and the second semiconductor surface is closer to the second main surface than the step. And a connecting body housing step for housing the connecting body so that two semiconductor elements are arranged.   The method for manufacturing a semiconductor device according to claim 9, wherein the first semiconductor element and the second semiconductor element are electrically connected by a thin metal wire.   The method for manufacturing a semiconductor device according to claim 9, wherein the first semiconductor element and the second semiconductor element are electrically connected by a bump.   The method for manufacturing a semiconductor device according to claim 9, further comprising a sealing step of filling a sealing resin body in the through hole of the wiring board.

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