JP2011082916A - Semiconductor relay - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent an available frequency band from becoming narrow owing to effects of a stab. <P>SOLUTION: A semiconductor relay 1 includes a light emitting element 2, a light receiving element 2, MOSFETs 4, 5, a terminal piece 6, first to third conductor parts 7, 8, 9 and a package 10. The light receiving element 3 receives light emitted from the light emitting element 2 in response to an input signal and generates a photovoltaic force. The MOSFETs 4, 5 are connected in inverse series by connecting gate electrodes 4a, 5a and source electrodes 4b, 5b to both terminals of the light receiving element 3, respectively, and connecting the source electrodes 4b, 5b with each other. The terminal piece 6 connects an electrode of the light emitting element 2 and an input-side external circuit. The light receiving element 3 is mounted in the first conductor portion 7, and a projecting portion 7a is disposed therein. Drain electrodes (not illustrated) of the MOSFETs 4, 5 are surface-mounted at one terminal side of the second and third conductor portions 8 and 9, and another terminal side is connected with an output-side external circuit. The projecting portion 7a is disposed between the second conductor portion 8 and the third conductor portion 9 when seen from a longitudinal direction. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a semiconductor relay.

Conventionally, various semiconductor relays using MOSFETs as switching elements have been provided (for example, see Patent Document 1).

Further, as an example of such a semiconductor relay, a semiconductor relay 9 as shown in FIGS.
There is zero. The semiconductor relay 90 includes a light emitting element 91, a light receiving element 92, and a pair of MOSFETs 93.
94, a terminal piece 95, first, second and third conductor portions 96, 97, 98, and a box-shaped package 99 which accommodates them. In the following description, the up / down / left / right directions are defined in FIG. 14, and the front of FIG.

A light emitting element 91 (for example, a light emitting diode) emits light according to an input signal. As shown in FIG. 13, the light receiving element 92 is disposed facing the light emitting element 91 and receives light emitted from the light emitting element 91 to generate a photovoltaic force. The MOSFETs 93 and 94 have gate electrodes 93a and 94a and source electrodes 93b and 94b connected to both ends of the light receiving element 92 through bonding wires 100a to 100f as shown in FIGS. 93
b and 94b are connected to each other and connected in reverse series. The terminal piece 95 includes first and second terminal pieces 95a and 95b each formed by bending an elongated rectangular plate four times stepwise as shown in FIGS.
Consists of Further, the upper end portions of the first and second terminal pieces 95a and 95b are exposed to the outside of the package 99, and are arranged in parallel inside the package 99 with their longitudinal directions directed vertically. The lower end portion of the first terminal piece 95a has a mounting portion 95c formed in a flat plate shape via an extending portion 95d extending to the right. The mounting part 95c is
When viewed from the front-rear direction, the light-emitting element 91 is mounted on the rear surface of the first terminal piece 95a and the second terminal piece 95b. One of the anode electrode and the cathode electrode of the light emitting element 91 is die-bonded to the mounting portion 95c of the first terminal piece 95a, and the other is wire-bonded to the second terminal piece 95b. The electrode of the light emitting element 91 is connected to the terminal piece 95.
Is electrically connected to an external circuit (not shown) on the input side.

The first conductor portion 96 is formed in a substantially flat plate shape as shown in FIGS. 12 to 14, and a light receiving element 92 is mounted on the front surface thereof, so that the light receiving element 92 and the light emitting element 91 face each other. Arranged just behind the mounting portion 95c. The second and third conductor portions 97 and 98 are formed in a substantially strip shape as shown in FIGS. 12 to 14, and the drain electrodes (not shown) of the MOSFETs 93 and 94 are surface-mounted on the upper ends, respectively. At the same time, the lower end side is exposed to the outside of the package 99 and connected to the signal patterns 101 and 102 extending in the left-right direction of the external circuit on the output side.

Then, the photoelectromotive force of the light receiving element 92 is applied between the gate electrode 93a and the source electrode 93b of the MOSFET 93 and between the gate electrode 94a and the source electrode 94b of the MOSFET 94, so that between the drain electrode and the source electrode 93b (not shown) of the MOSFET 93. And M
The impedance between the drain electrode and the source electrode 94b (not shown) of the OSFET 94 changes, and the second and third conductor portions 97 and 98 are switched between conductive and non-conductive.

JP 2003-8050 A

However, the conventional semiconductor relay 90 has a longitudinal direction perpendicular to the signal patterns 101, 102 in which the second and third conductor portions 97, 98 extend in the left-right direction when viewed from the front-rear direction as shown in FIG. Since the first conductor portion 96 is disposed immediately above the second and third conductor portions 97 and 98, the signal patterns 101 and 102 are connected to the first conductor portion 96. There is a problem that a stub is formed over the upper end, and the stub resonates, thereby increasing an insertion loss (insertion loss) near the resonance frequency and narrowing a usable frequency band.

The present invention has been made in view of the above reasons, and an object of the present invention is to provide a semiconductor relay capable of preventing a usable frequency band from becoming narrow due to the influence of a stub.

In order to achieve the above object, the invention according to claim 1 generates a photovoltaic power by receiving a light emitting element that emits light in response to an input signal and light emitted from the light emitting element that is disposed facing the light emitting element. A pair of MOSFEs that are connected in reverse series with a gate electrode and a source electrode connected to both ends of the light receiving element via a bonding wire and with the source electrodes connected to each other.
T, a flat strip-shaped mounting portion on which the light-emitting element is mounted, a terminal piece that electrically connects the electrode of the light-emitting element and the input-side external circuit, and a light-receiving element mounted on the substantially flat plate The first and second conductor portions are formed in a substantially strip-like shape, and the drain electrode of the MOSFET is surface-mounted on one end side and the other end side is connected to the external circuit on the output side. A conductor part and a box-type package that accommodates the conductor part, and between the second and third conductor parts, the photovoltaic power is applied between each gate-source electrode of the MOSFET. The impedance of each drain-source electrode is changed to be switched between conduction / non-conduction, and at least a part of the first conductor portion is a method of a mounting surface on which the MOSFETs of the second and third conductor portions are respectively mounted. When viewed from the line direction, the second conductor and the third conductor Characterized in that it is disposed between the body portion.

According to this invention, at least a part of the first conductor portion is the MOS of the second and third conductor portions.
Since the FET is disposed between the second conductor portion and the third conductor portion when viewed from the normal direction of the mounting surface on which each FET is mounted, the part of the first conductor portion and the second conductor portion And the third conductor portions are arranged so as to be arranged in a line, and the stub formed from the signal pattern of the external circuit on the output side to the first conductor portion can be shortened. Therefore, it is possible to prevent the usable frequency band from becoming narrow.

According to a second aspect of the present invention, in the first aspect of the invention, the light receiving elements of the first, second, and third conductor portions, the mounting surfaces on which the pair of MOSFETs are mounted, and the light emitting elements of the terminal pieces are mounted. The mounting surfaces are opposed to each other, and these mounting surfaces are oriented in a direction perpendicular to the second and third conductor portions of the package and one end portion where the terminal pieces are exposed to the outside. And

According to the present invention, these mounting surfaces are not oriented in the parallel direction as in the prior art with respect to the second and third conductor portions of the package and the one end portion where the terminal pieces are exposed to the outside. Since it is oriented in the vertical direction, it is possible to reduce the mounting area as compared with the prior art by surface-mounting the one end of the package on the circuit board of the external circuit.

According to a third aspect of the present invention, in the first or second aspect of the present invention, the first conductor portion is provided with a convex portion that protrudes in a substantially rod shape from the peripheral portion to the outside, and the convex portion is The conductor portion is disposed between the second conductor portion and the third conductor portion when viewed from the normal direction as the part of the conductor portion, and MO
Each is electrically connected to the source electrode of the SFET.

According to this invention, the convex portion is disposed between the second conductor portion and the third conductor portion when viewed from the normal direction as the part of the first conductor portion, Since each of them is electrically connected to the source electrode, the convex portion and the second and third conductor portions are arranged so as to be arranged in a line, and the same effect as in the first aspect can be obtained.

According to a fourth aspect of the invention, in the first or second aspect of the invention, the first conductor portion is substantially entirely between the second conductor portion and the third conductor portion when viewed from the normal direction. It is arrange | positioned and each is electrically connected with the source electrode of MOSFET, It is characterized by the above-mentioned.

According to the present invention, the first conductor portion is substantially entirely disposed between the second conductor portion and the third conductor portion when viewed from the normal direction, and each of the first conductor portion and the source electrode of the MOSFET is electrically connected. Therefore, the first, second, and third conductor portions are arranged so as to be aligned in a row, and the same effect as in the first aspect can be obtained.

The invention of claim 5 is the invention of any one of claims 1 to 4, wherein the second and third conductor portions and the portion of the terminal piece exposed to the outside from the package are flush with the outer surface of the package. It is characterized by that.

According to the present invention, the portions of the second and third conductor portions and the terminal pieces exposed to the outside from the package are flush with the outer surface of the package, so the package is surface-mounted on the circuit board of the external circuit. Sometimes, it is possible to expand the usable frequency band by suppressing the impedance mismatch of the part.

The present invention has an effect that it is possible to prevent a usable frequency band from becoming narrow due to the influence of a stub.

It is a perspective view inside the package of Embodiment 1 of this invention. It is sectional drawing in the same as the above. It is explanatory drawing which shows the analysis result of the insertion loss in the same as the above. It is a perspective view inside the package of Embodiment 2 of this invention. It is sectional drawing in the same as the above. It is explanatory drawing which shows the analysis result of the insertion loss in the same as the above. It is a perspective view inside the package of another example same as the above. It is explanatory drawing which shows the analysis result of the insertion loss of another example in the same as the above. It is a perspective view inside the package of Embodiment 3 of this invention. It is sectional drawing in the same as the above. It is explanatory drawing which shows the analysis result of the insertion loss in the same as the above. It is a perspective view inside the package of an example of the conventional semiconductor relay. It is a left view inside a package in the same as the above. It is sectional drawing in the same as the above.

(Embodiment 1)
Hereinafter, Embodiment 1 of the present invention will be described with reference to FIGS. In the following description, the vertical and horizontal directions are defined in FIG. 2, and the front of FIG. As shown in FIGS. 1 and 2, the semiconductor relay 1 of the present embodiment includes a light emitting element 2, a light receiving element 3, and a pair of MOs.
SFETs 4 and 5, a terminal piece 6, first, second, and third conductor portions 7, 8, and 9 and a package 10 that accommodates them are provided. The package 10 is formed in a rectangular box shape using a synthetic resin material as shown in FIG. 1, and the outer surface of the rear end portion 10a is surface-mounted on a circuit board (not shown) of an external circuit (not shown). .

The light emitting element 2 is composed of, for example, a light emitting diode, and emits light according to an input signal, like the light emitting element 91 described in the prior art. Further, the outer shape of the light emitting element 2 is formed in a cylindrical shape as shown in FIG. 1, and has electrodes (an anode electrode and a cathode electrode) on both front and rear end faces thereof.

As shown in FIGS. 1 and 2, the light receiving element 3 is arranged to face the light emitting element 2, and receives a light emitted from the light emitting element 2 to generate a photoelectromotive force (not shown). )
And a charge / discharge circuit (not shown) for performing charge / discharge control by photovoltaic power on the MOSFETs 4 and 5. As shown in FIGS. 1 and 2, the light receiving element 3 has electrodes 3a and 3b which are anodes and cathodes of the photodiode array, and a control signal output electrode (hereinafter referred to as an electrode) 3c on the front surface. .

The light emitting element 2 and the light receiving element 3 are optically coupled by sealing the inside of the package 10 with a transparent resin (not shown). Note that the surface of the transparent resin is covered with a light-shielding thin film (not shown) in order to prevent disturbance light from entering.

As shown in FIGS. 1 and 2, each of the MOSFETs 4 and 5 includes gate electrodes 4a and 5a and source electrodes 4b and 5b on the front surface, and a drain electrode (not shown) on the rear surface.

The terminal piece 6 includes first and second terminal pieces 6a and 6b, each of which is formed by bending an elongated rectangular plate four times stepwise as shown in FIGS. The left end of the first terminal piece 6a, and the second
The right end of the terminal piece 6b is exposed to the outside of the package 10 through insertion holes (not shown) penetrating the left and right edges above the rear end 10a of the package 10. Also, the first terminal piece 6a
A mounting portion 6c that is formed in a flat plate shape protrudes from the right end portion. The first and second terminal pieces 6a and 6b are arranged so that the longitudinal direction of the first terminal piece 6a and the second terminal piece 6b and the left end portion of the first terminal piece 6b are set to the left and right directions inside the package 10, respectively. Are arranged so as to face each other. That is, the terminal piece 6 is formed in a substantially straight line as a whole when viewed from the front-rear direction.

Here, one of the anode electrode and the cathode electrode on the front end face of the light emitting element 2 is die-bonded to the rear face of the mounting portion 6c, and the other electrode on the rear end face is wire-bonded to the second terminal piece 6b. The electrodes of the light emitting element 2 are electrically connected to an external circuit (not shown) on the input side via the terminal piece 6.

As shown in FIGS. 1 and 2, the first conductor portion 7 is formed of a conductive material in a substantially flat plate shape, the light receiving element 3 described above is mounted on the front surface thereof, and the light receiving element 3 faces the light emitting element 2. It arrange | positions just behind the mounting part 6c so that it may arrange | position. Further, the first conductor portion 7 is provided with a convex portion 7a that protrudes outward in a substantially rod shape from the lower peripheral edge portion, and further has a protruding piece 7b that protrudes outward in a substantially rectangular plate shape from the left peripheral edge portion. Is done.

As shown in FIGS. 1 to 2, the second and third conductor portions 8 and 9 are each formed by bending a strip formed of a conductive material twice in a step shape. The left end side of the second conductor portion 8 and the right end side of the third conductor portion 9 are insertion holes (not shown) penetrating the left and right edges below the rear end portion 10a of the package 10.
To the signal patterns 13 and 14 that are exposed to the outside of the package 10 and extend in the left-right direction of the external circuit on the output side. In addition, the second and third conductor portions 8 and 9 are arranged such that the right end of the second conductor portion 8 and the left end of the third conductor portion 9 are in the package 10 with the longitudinal direction thereof being directed in the left-right direction. They are arranged so as to face each other with a desired gap 12 therebetween. The drain electrodes (not shown) on the rear surfaces of the MOSFETs 4 and 5 are surface-mounted on the right end side of the second conductor portion 8 and the left end side of the third conductor portion, respectively.

Here, as shown in FIGS. 1 and 2, the first conductor portion 7 of the present embodiment is disposed with the respective front surfaces flush with each other immediately above the second and third conductor portions 8 and 9. At the same time, when viewed from the front-rear direction, the convex portion 7 a is disposed in the gap 12 between the second conductor portion 8 and the third conductor portion 9. The gate electrodes 4a and 5a of the MOSFETs 4 and 5 are bonded to the bonding wires 11a and 11b.
Are connected to the electrodes 3a and 3b of the light receiving element 3, respectively. The source electrodes 4b and 5b are electrically connected to each other by being connected to the convex portion 7a via bonding wires 11c to 11f. Further, the projecting piece 7b is connected to the electrode 3c of the light receiving element 3 through the bonding wire 11g, so that the source electrodes 4b and 5b are electrically connected to the electrode 3c of the light receiving element 3 in common.

The operation of the semiconductor relay 1 of this embodiment will be briefly described. First, when an input signal is input from an external circuit on the input side, the light emitting element 2 emits light backward. The photodiode array of the light receiving element 3 receives this light and generates a photovoltaic force. Then, the above-described charging / discharging circuit (not shown) efficiently charges charges between the gate electrode 4a and the source electrode 4b of the MOSFET 4 and between the gate electrode 5a and the source electrode 5b of the MOSFET 5 by the generation of the photovoltaic power of the photodiode array. Control. Then, the drain electrode (not shown) of the MOSFET 4-the source electrode 4 b and the drain electrode (not shown) of the MOSFET 5-the source electrode 5 b are electrically connected, and between the second and third conductor portions 8 and 9. Is conducted through MOSFETs 4 and 5. Note that the MOSFETs 4 and 5 are connected to the source electrodes 4b and 5 via the projection 7a as described above.
Since the b are connected in reverse series by connecting each other, the semiconductor relay 1 is a MOS
High-frequency signals can be transmitted bidirectionally via the FETs 4 and 5.

On the other hand, when the input signal is not input from the external circuit on the input side, the light emitting element 2 does not emit light, and the photodiode array of the light receiving element 3 does not generate photovoltaic power. At this time M
The gate electrode 4a-source electrode 4b of the OSFET 4 and the gate electrode 5 of the MOSFET 5
The charge charged between the a-source electrode 5b is discharged by the previous charge / discharge circuit. As a result, the drain electrode (not shown) of the MOSFET 4-the source electrode 4b and the MOSFET
5 between the drain electrode (not shown) and the source electrode 5b is cut off, and the second and third conductor portions 8 and 9 are switched from conduction to non-conduction.

Hereinafter, the operation of the semiconductor relay 1 of the present embodiment will be described. The first conductor portion 7 of the present embodiment is provided with the convex portion 7a as described above, and the convex portion 7a is located between the second conductor portion 8 and the third conductor portion 9 when viewed from the front-rear direction. It is arranged in a certain gap 12. That is, the convex portion 7a and the second and third conductor portions 8 and 9 are arranged in a line along the left-right direction, and the first conductor portion from the signal patterns 13 and 14 of the external circuit on the output side. The stub formed over the upper end of 7 (broken line arrow in FIG. 2) can be shortened. Therefore, it is possible to prevent the usable frequency band from becoming narrow due to the influence of the stub.

Moreover, the result calculated | required by the analysis about the insertion loss of the semiconductor relay 1 of this embodiment and the conventional semiconductor relay 90 is shown in FIG. 3 is a characteristic curve of the semiconductor relay 1, and b is a characteristic curve of the semiconductor relay 90. As shown by the analysis result, the conventional semiconductor relay 90 has a narrow usable frequency band due to resonance generated by the stub and an insertion loss increasing near the resonance frequency. On the other hand, the semiconductor relay 1 of this embodiment
The increase in the insertion loss near the resonance frequency is suppressed, and the usable frequency band is wider than that of the semiconductor relay 90.

In the semiconductor relay 1 of this embodiment, the first terminal piece 6a and the second conductor portion 7 are exposed from the left edge portion of the rear end portion 10a of the package 10, respectively, and the second terminal piece 6b and the second conductor portion 7 are exposed. The two conductor portions 8 are exposed from the right edge portion of the rear end portion 10 a of the package 10. However, the present invention is not limited to this, and the first and second terminal pieces 6a and 6b are exposed from the upper edge portion of the rear end portion 10a, respectively, and the second and third conductor portions 7 and 8 are exposed as in the conventional semiconductor relay 90. You may expose from the lower edge part of the rear-end part 10a, respectively.

(Embodiment 2)
Hereinafter, Embodiment 2 of the present invention will be described with reference to FIGS. Since the basic configuration of the present embodiment is the same as that of the first embodiment, common components are denoted by the same reference numerals and description thereof is omitted.

The semiconductor relay 1 according to the present embodiment is disposed in the gap 12 between the second conductor portion 8 and the third conductor portion 9 when substantially the entire first conductor portion 7 is viewed from the front-rear direction. There is a feature in the point.

As shown in FIGS. 4 and 5, the first conductor portion 7 is formed in a substantially flat plate shape with a conductive material, and the light receiving element 3 described above is mounted on the front surface thereof. However, the convex part 7a and the protruding piece 7b of Embodiment 1 are used.
Is not arranged. In addition, since the position where the light receiving element 3 is arranged when viewed from the front-rear direction is closer to the lower side than in the first embodiment, the terminal piece is arranged so that the light emitting element 2 and the light receiving element 3 are arranged to face each other. The length dimension in the vertical direction of the mounting portion 6c of 6 is set larger than that of the mounting portion 6c of the first embodiment.

Gate electrodes 4a and 5a of MOSFETs 4 and 5 are connected to electrodes 3a and 3b of light receiving element 3 through bonding wires 11a and 11b, respectively. The source electrode 4b is connected to the vicinity of the left peripheral edge portion of the first conductor portion 7 via bonding wires 11c and 11d, and the source electrode 5
b is connected to the vicinity of the right peripheral edge of the first conductor portion 7 via the bonding wires 11e and 11f, so that the source electrodes 4b and 5b are electrically connected to each other. Furthermore, the source electrodes 4b and 5b are electrically connected in common with the electrode 3c of the light receiving element 3 by being connected to the electrode 3c of the light receiving element 3 from the upper left end of the first conductor part 7 through the bonding wire 11g. Is done.

Hereinafter, the operation of the semiconductor relay 1 of the present embodiment will be described. The first conductor portion 7 of the present embodiment is disposed in the gap 12 between the second conductor portion 8 and the third conductor portion 9 when viewed substantially from the front-rear direction. That is, the first conductor portion 7 and the second and third conductor portions 8, 9
Are arranged in a line along the left-right direction, and the signal pattern 13 of the external circuit on the output side
, 14 to the upper end of the first conductor portion 7 can be shortened (broken arrows in FIG. 5). Therefore, it is possible to prevent the usable frequency band from becoming narrow due to the influence of the stub.

Moreover, the result calculated | required by the analysis about the insertion loss of the semiconductor relay 1 of this embodiment and the conventional semiconductor relay 90 is shown in FIG. In FIG. 6, a is a characteristic curve of the semiconductor relay 1, and b is a characteristic curve of the semiconductor relay 90. As shown by the analysis result, the conventional semiconductor relay 90 has a narrow usable frequency band due to resonance generated by the stub and an insertion loss increasing near the resonance frequency. On the other hand, in the semiconductor relay 1 of this embodiment, an increase in insertion loss in the vicinity of the resonance frequency is suppressed, and the usable frequency band is wider than that of the semiconductor relay 90.

By the way, the package 1 of the 2nd and 3rd conductor parts 8 and 9 of this embodiment, and the terminal piece 6 is shown.
The part exposed to the outside from 0 protrudes from the outer surface of the package 10 while being bent in a step shape. Such exposed portions may cause impedance mismatch when surface-mounted on a circuit board (not shown) of an external circuit. On the other hand, as shown in FIG. 7, if the portions are flush with the outer surface of the package 10, impedance mismatches at the portions can be suppressed and a usable frequency band can be expanded.

In addition, the result calculated | required by the analysis about the insertion loss of the semiconductor relay 1 which was the same as the above and the semiconductor relay 1 which was not the same is shown in FIG. In FIG. 8, a is a characteristic curve of the semiconductor relay 1 that is flush, and b is a characteristic curve of the semiconductor relay 1 that is not flush, which is the same as the characteristic curve a in FIG. And as you can see from this analysis result,
The usable frequency band of the semiconductor relay 1 that is flush is wider than that of the semiconductor relay 1 that is not flush.

(Embodiment 3)
Hereinafter, Embodiment 3 of the present invention will be described with reference to FIGS. Since the basic configuration of the present embodiment is the same as that of the first embodiment, common components are denoted by the same reference numerals and description thereof is omitted.

The semiconductor relay 1 of the present embodiment has a mounting surface 7c on which the light receiving element 3 of the first conductor portion 7 is mounted.
Mounting surfaces 8a and 9a on which the MOSFETs 4 and 5 of the second and third conductor portions 8 and 9 are mounted, respectively.
And the mounting surface 6d on which the light emitting element 2 of the terminal piece 6 is mounted is characterized in that it is directed in the vertical direction with respect to the rear end portion 10a of the package 10, respectively.

As shown in FIG. 9, the terminal piece 6 includes a first terminal piece 6a formed in an L shape when the elongated rectangular plate is viewed from above and below, and a second terminal piece formed in the elongated rectangular plate. 6b.
The first and second terminal pieces 6a and 6b are arranged so as to stand above the rear end portion 10a in the package 10 with their longitudinal directions facing in the front-rear direction. First and second terminal pieces 6a
, 6b is exposed to the outside of the package 10 through insertion holes (not shown) penetrating the left and right ends above the rear end 10a. The exposed parts are flush with the outer surface of the package 10.

As shown in FIGS. 9 and 10, the first conductor portion 7 is formed in a substantially flat plate shape with a conductive material and is provided with a convex portion 7 a that protrudes in a substantially rod shape from the rear peripheral edge portion to the outside. Extending pieces 7d and 7d extending in a rectangular tube shape from the portion to the outside are disposed. And the 1st conductor part 7 is either the front-end | tip part of the convex part 7a, or the front-end | tip part of the extension pieces 7d and 7d, or both.
The rear end portion 10a is placed in contact with the rear end portion 10a or the left and right end portions of the 0 so as to stand up below the rear end portion 10a. In addition, instead of the projecting piece 7b of the first embodiment, the extended piece 7d is bonded to the bonding wire 11g.
To the electrode 3 c of the light receiving element 3.

As shown in FIGS. 9 and 10, the second and third conductor portions 8 and 9 are each formed by bending a strip formed of a conductive material at the rear. The second and third conductor portions 8 and 9 are disposed so as to stand at both the left and right ends below the rear end portion 10a of the package 10, respectively. 2nd and 3rd
The rear end portions of the conductor portions 8 and 9 are exposed to the outside of the package 10 through insertion holes (not shown) penetrating the left and right ends below the rear end portion 10 a of the package 10. The exposed parts are flush with the outer surface of the package 10.

That is, the mounting surfaces 7c, 8a, and 9a of the first, second, and third conductor portions 7, 8, and 9 and the mounting surface 6d of the terminal piece 6 face each other, and these mounting surfaces 6d, 7c, and Since 8a and 9a are directed not in the parallel direction as in the first and second embodiments but in the vertical direction with respect to the rear end portion 10a of the package 10, the semiconductor relay according to the first and second embodiments. The mounting area (outer area of the rear end portion 10a) can be made smaller than 1.

Moreover, the result calculated | required by the analysis about the insertion loss of the semiconductor relay 1 of this embodiment and the conventional semiconductor relay 90 is shown in FIG. In FIG. 11, a is a characteristic curve of the semiconductor relay 1, and b is a characteristic curve of the semiconductor relay 90. As shown in the analysis result, the semiconductor relay 1 according to the present embodiment suppresses an increase in insertion loss and has a wider usable frequency band than the semiconductor relay 90. Furthermore, the semiconductor relay 1 of this embodiment (FIG. 1
1 and the semiconductor relay 1 of the first and second embodiments (characteristic curve a of FIG. 3 and characteristic curve a of FIG. 6) can be used for the semiconductor relay 1 of the present embodiment. It can be seen that the frequency band is wider.

DESCRIPTION OF SYMBOLS 1 Semiconductor relay 2 Light emitting element 3 Light receiving element 4 MOSFET
4a Gate electrode 4b Source electrode 5 MOSFET
5a Gate electrode 5b Source electrode 6 Terminal piece 7 First conductor portion 7a Convex portion 8 Second conductor portion 9 Third conductor portion 10 Package 10a Rear end portion

Claims (5)

A light emitting element that emits light in response to an input signal, a light receiving element that is disposed opposite to the light emitting element and that receives light emitted from the light emitting element and generates a photovoltaic force, and a gate electrode and a source electrode through bonding wires Are connected to both ends of the light receiving element and have a pair of MOSFETs connected in reverse series with the source electrodes connected to each other, and a flat mounting portion on which the light emitting element is mounted, and the electrodes of the light emitting element and the input A terminal piece for electrically connecting the external circuit on the side, a first conductor portion formed in a substantially flat plate shape on which the light receiving element is mounted, and formed in a substantially strip plate shape on one end side with a MOSF
ET drain electrodes are mounted on the surface, and the other end is connected to an external circuit on the output side, and a box-shaped package that houses these is provided in the second package.
And between the third conductor portions, the photoelectromotive force is applied between each gate-source electrode of the MOSFET, whereby the impedance between each drain-source electrode is changed to be switched between conductive and non-conductive,
At least a part of the first conductor portion is formed between the second conductor portion and the third conductor portion when viewed from the normal direction of the mounting surface on which the MOSFETs of the second and third conductor portions are respectively mounted. A semiconductor relay characterized by being disposed between. The mounting surfaces on which the light receiving elements of the first, second, and third conductor portions and the pair of MOSFETs are respectively mounted and the mounting surfaces on which the light emitting elements of the terminal pieces are mounted face each other, and these mounting surfaces 2. The semiconductor relay according to claim 1, wherein the second and third conductor portions of the package and the terminal piece are oriented in a direction perpendicular to one end portion exposed to the outside. The first conductor portion is provided with a convex portion protruding in a substantially rod shape from the peripheral portion to the outside,
The convex portion is disposed between the second conductor portion and the third conductor portion as viewed from the normal direction as the part of the first conductor portion, and is electrically connected to the source electrode of the MOSFET. The semiconductor relay according to claim 1, wherein the semiconductor relay is connected to the relay. The first conductor portion is disposed substantially between the second conductor portion and the third conductor portion when viewed from the normal direction, and is electrically connected to the source electrode of the MOSFET. The semiconductor relay according to claim 1 or 2. 5. The semiconductor according to claim 1, wherein the second and third conductor portions and the portion of the terminal piece exposed from the package are flush with the outer surface of the package. relay.

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