JP2011080853A - Humidity sensor package and method for manufacturing the same - Google Patents

Humidity sensor package and method for manufacturing the same Download PDF

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JP2011080853A
JP2011080853A JP2009233124A JP2009233124A JP2011080853A JP 2011080853 A JP2011080853 A JP 2011080853A JP 2009233124 A JP2009233124 A JP 2009233124A JP 2009233124 A JP2009233124 A JP 2009233124A JP 2011080853 A JP2011080853 A JP 2011080853A
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substrate
humidity sensor
sensor chip
electrode
forming
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Kiyoshi Sato
清 佐藤
Shinya Yokoyama
進矢 横山
Satoshi Waga
聡 和賀
Sumuto Morita
澄人 森田
Motohiro Ushiki
志浩 牛来
Tatsuya Saito
達也 斉藤
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Alps Alpine Co Ltd
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Alps Electric Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015Shape
    • H01L2924/10155Shape being other than a cuboid

Abstract

<P>PROBLEM TO BE SOLVED: To provide a humidity sensor package certainly sealing those other than a humidity sensor and achieving high reliability and lower height and a method of manufacturing thereof. <P>SOLUTION: In the humidity sensor package which is made by adhesive fixing a sensor chip substrate forming a humidity sensor and an IC substrate detecting an output change of the humidity sensor to a support substrate, the sensor tip substrate and the IC substrate are covered by a sealing resin, while exposing the humidity sensor, and the surface of the sealing resin and a face of forming the humidity sensor of the sensor tip substrate are positioned at the same height. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、湿度センサとIC基板を同一の支持基板上に接着固定した湿度センサパッケージ及びその製造方法に関する。   The present invention relates to a humidity sensor package in which a humidity sensor and an IC substrate are bonded and fixed on the same support substrate, and a manufacturing method thereof.

湿度に応じて静電容量または電気抵抗が変化する湿度センサを形成したセンサチップ基板と、湿度センサの容量変化または抵抗変化を検出するIC基板とを同一の支持基板上に接着固定してなる湿度センサパッケージが知られている。このような湿度センサパッケージでは、センサチップ基板とIC基板の電気配線部やIC基板を衝撃による破損や腐食から保護するために基板全体を封止することが望ましいが、湿度検知のために湿度センサ(感湿部)を雰囲気に曝す必要がある。そこで、従来では、湿度センサを露出させて、センサチップ基板とIC基板の電気配線部のみを保護樹脂で覆う構造(特許文献1)、または、湿度センサとして湿度に応じて出力が変化する感湿部と湿度によらず一定出力を保持する基準部を備え、感湿部のみを露出させるエリアを画成して該感湿部の周囲を覆う保護材を設け、この保護材で覆われた領域以外を保護樹脂で覆う構造が採られていた。   Humidity formed by bonding and fixing a sensor chip substrate on which a humidity sensor whose capacitance or electric resistance changes according to humidity and an IC substrate that detects capacitance change or resistance change of the humidity sensor on the same support substrate Sensor packages are known. In such a humidity sensor package, it is desirable to seal the entire substrate in order to protect the electric wiring part of the sensor chip substrate and the IC substrate and the IC substrate from damage and corrosion due to impact. (Moisture sensitive part) needs to be exposed to the atmosphere. Therefore, conventionally, a humidity sensor is exposed and only the electric wiring portion of the sensor chip substrate and the IC substrate is covered with a protective resin (Patent Document 1), or a humidity sensor whose output changes depending on humidity as a humidity sensor. An area covered with a protective material provided with a reference material that maintains a constant output regardless of the humidity and humidity, provided an area that exposes only the moisture sensitive part and covers the periphery of the moisture sensitive part Other than that, the structure was covered with a protective resin.

特開2007−127612号公報JP 2007-127612 A

しかし、電気配線部のみに保護樹脂を設ける構造では、湿度センサに保護樹脂が流れてしまうおそれがあり、湿度センサのみを露出させるのが難しかった。一方、保護樹脂とは別に湿度センサの感湿部の周囲を覆う保護材を設ける構造では、例えばセンサチップ基板をSi基板とし、保護材をガラスとすると、Siとガラスの熱膨張率の違いからセンサチップ基板を支持基板に接着固定するときにSi−ガラスの熱歪みが生じて湿度センサの温度特性が劣化してしまい、信頼性が悪かった。   However, in the structure in which the protective resin is provided only in the electric wiring portion, the protective resin may flow into the humidity sensor, and it is difficult to expose only the humidity sensor. On the other hand, in a structure in which a protective material that covers the periphery of the moisture sensitive part of the humidity sensor is provided separately from the protective resin, for example, if the sensor chip substrate is a Si substrate and the protective material is glass, the difference in thermal expansion coefficient between Si and glass When the sensor chip substrate is bonded and fixed to the support substrate, thermal distortion of the Si-glass occurs, and the temperature characteristic of the humidity sensor deteriorates, resulting in poor reliability.

また、センサチップ基板とIC基板をワイヤーボンディングにより電気的に接続する従来構造では、ワイヤーボンディング部を保護するために保護樹脂を厚くしなければならず、パッケージの低背化が難しかった。このため、従来から湿度センサパッケージの外部実装を容易にしたいという要望があるものの、小型かつ低背で外部実装可能な湿度センサパッケージは実現できていない。   Further, in the conventional structure in which the sensor chip substrate and the IC substrate are electrically connected by wire bonding, the protective resin must be thickened to protect the wire bonding portion, and it has been difficult to reduce the package height. For this reason, there has been a demand for facilitating external mounting of the humidity sensor package, but a humidity sensor package that is small and low in profile and can be externally mounted has not been realized.

本発明は、以上の問題意識に基づき、湿度センサ以外を確実に封止でき、高信頼性かつ低背化を実現可能な湿度センサパッケージ及びその製造方法を提供することを目的とする。   An object of the present invention is to provide a humidity sensor package that can reliably seal other than the humidity sensor based on the above problem awareness, and that can achieve high reliability and low profile, and a method for manufacturing the same.

本発明は、センサチップ基板の湿度センサを形成した湿度センサ形成面を該湿度センサと電気的に接続した複数の電極パッドよりも高く設け、センサチップ基板及びIC基板を覆う封止樹脂をこの湿度センサ形成面と同じ高さまで設ければ、封止樹脂によってセンサチップ基板、IC基板及びその電気配線部を覆っても低背化でき、かつ、湿度センサのみをパッケージ表面に露出させることができることに着眼して完成されたものである。   In the present invention, the humidity sensor forming surface on which the humidity sensor of the sensor chip substrate is formed is provided higher than the plurality of electrode pads electrically connected to the humidity sensor, and the sealing resin covering the sensor chip substrate and the IC substrate is provided with this humidity If it is provided up to the same height as the sensor formation surface, the height can be reduced even if the sensor chip substrate, IC substrate and its electrical wiring part are covered with the sealing resin, and only the humidity sensor can be exposed to the package surface. It was completed with attention.

すなわち、本発明は、湿度センサを形成したセンサチップ基板と、前記湿度センサの出力変化を検出するIC基板とを同一の支持基板に接着固定してなる湿度センサパッケージにおいて、前記湿度センサを露出させた状態で前記センサチップ基板及び前記IC基板を封止樹脂で覆い、かつ、該封止樹脂表面と前記センサチップ基板の湿度センサ形成面とを同一高さ位置にしたことを特徴としている。   That is, the present invention relates to a humidity sensor package in which a sensor chip substrate on which a humidity sensor is formed and an IC substrate that detects an output change of the humidity sensor are bonded and fixed to the same support substrate, and the humidity sensor is exposed. In this state, the sensor chip substrate and the IC substrate are covered with a sealing resin, and the surface of the sealing resin and the humidity sensor forming surface of the sensor chip substrate are at the same height.

支持基板には、前記封止樹脂で覆われた面とは反対側の面に、前記IC基板を外部回路と接続するためのSMD端子が備えられていることが好ましい。この態様によれば、SMD対応可能な湿度センサパッケージが得られる。   The support substrate is preferably provided with an SMD terminal for connecting the IC substrate to an external circuit on the surface opposite to the surface covered with the sealing resin. According to this aspect, a humidity sensor package capable of supporting SMD is obtained.

封止樹脂表面とセンサチップ基板の湿度センサ形成面とを同一高さ位置にするための具体的な態様には、以下の第1〜第4の態様がある。   Specific modes for setting the sealing resin surface and the humidity sensor forming surface of the sensor chip substrate to the same height include the following first to fourth modes.

第1の態様では、前記センサチップ基板の表面に、その表面高さを異ならせた高平面部と低平面部及びこの高低平面部の間をつなぐ傾斜面部を設け、前記高平面部に前記湿度センサを形成し、前記低平面部に複数の電極パッドを形成し、この湿度センサと複数の電極パッドを電気的に接続する電極配線を前記傾斜面部に沿わせて形成する。この態様によれば、センサチップ基板の電極パッドとIC基板の電極パッドをワイヤーボンディングにより接続する場合に、高平面部と低平面部の表面高さの差によってワイヤーボンディングのためのスペース及びワイヤーボンディング部を封止するためのスペースを確保でき、低背化できる。   In the first aspect, on the surface of the sensor chip substrate, there are provided a high plane portion and a low plane portion having different surface heights, and an inclined surface portion connecting between the high and low plane portions, and the humidity is provided on the high plane portion. A sensor is formed, a plurality of electrode pads are formed on the low plane portion, and an electrode wiring for electrically connecting the humidity sensor and the plurality of electrode pads is formed along the inclined surface portion. According to this aspect, when the electrode pad of the sensor chip substrate and the electrode pad of the IC substrate are connected by wire bonding, the space for wire bonding and the wire bonding are determined by the difference in surface height between the high plane portion and the low plane portion. A space for sealing the portion can be secured and the height can be reduced.

ワイヤーボンディングによりセンサチップ基板とIC基板を電気的に接続する場合は、前記センサチップ基板と前記IC基板の電極パッドを導電性ワイヤーで接続し、この導電性ワイヤーを前記センサチップ基板の湿度センサ形成面よりも低く設けることが実際的である。   When the sensor chip substrate and the IC substrate are electrically connected by wire bonding, the sensor chip substrate and the electrode pad of the IC substrate are connected by a conductive wire, and the humidity sensor is formed on the sensor chip substrate. It is practical to provide it lower than the surface.

第2の態様では、前記センサチップ基板には、電気的に導通させた表裏面の一方と他方に、前記湿度センサと該湿度センサに導通接続する複数の電極パッドを形成し、前記支持基板には、接着固定した前記センサチップ基板の複数の電極パッドと対向する位置に、前記IC基板と電気的に接続する複数の電極配線をそれぞれ形成する。この態様によれば、センサチップ基板と支持基板がその接着面で電気的に接続し、支持基板とIC基板が電気的に接続するので、センサチップ基板とIC基板をワイヤーボンディングにより直に接続する場合よりも基板厚さ方向のスペースを省略でき、低背化が図れる。   In the second aspect, the sensor chip substrate has the humidity sensor and a plurality of electrode pads that are electrically connected to the humidity sensor formed on one and the other of the electrically conductive front and back surfaces. Respectively form a plurality of electrode wirings electrically connected to the IC substrate at positions facing the plurality of electrode pads of the sensor chip substrate bonded and fixed. According to this aspect, since the sensor chip substrate and the support substrate are electrically connected at the bonding surface, and the support substrate and the IC substrate are electrically connected, the sensor chip substrate and the IC substrate are directly connected by wire bonding. The space in the substrate thickness direction can be omitted as compared with the case, and the height can be reduced.

前記センサチップ基板の複数の電極パッドは、該センサチップ基板を所定深さ削って形成した凹部内に設けることが好ましい。この態様によれば、電極パッドの厚さ分のスペースを省略でき、低背化に貢献できる。   The plurality of electrode pads of the sensor chip substrate are preferably provided in a recess formed by cutting the sensor chip substrate to a predetermined depth. According to this aspect, a space corresponding to the thickness of the electrode pad can be omitted, which can contribute to a reduction in height.

ワイヤーボンディングによりIC基板と支持基板を接続する場合には、前記IC基板と前記支持基板の複数の配線導体を導電性ワイヤーで接続し、この導電性ワイヤーを前記センサチップ基板の湿度センサ形成面よりも低く設けることが実際的である。   When connecting an IC substrate and a support substrate by wire bonding, a plurality of wiring conductors of the IC substrate and the support substrate are connected by a conductive wire, and the conductive wire is connected to a humidity sensor forming surface of the sensor chip substrate. It is practical to provide a low level.

第3の態様では、前記センサチップ基板の複数の電極パッドを基板側面に形成し、この複数の電極パッドと前記支持基板に設けた電極配線の一端部を互いに直交する位置関係で接続し、該支持基板に設けた電極配線の他端部と前記IC基板の複数の電極パッドを電気的に接続する。この態様によれば、センサチップ基板の複数の電極パッドと支持基板の配線導体を直に接続するので、ワイヤーボンディングにより接続する場合よりも省スペース化を図れる。導電性ワイヤーにより前記支持基板の電極配線の他端部と前記IC基板の複数の電極パッドを接続する場合は、この導電性ワイヤーを前記湿度センサ形成面よりも低く設ける。   In the third aspect, a plurality of electrode pads of the sensor chip substrate are formed on a side surface of the sensor chip, and the plurality of electrode pads and one end of the electrode wiring provided on the support substrate are connected in a positional relationship orthogonal to each other, The other end of the electrode wiring provided on the support substrate is electrically connected to the plurality of electrode pads of the IC substrate. According to this aspect, since the plurality of electrode pads of the sensor chip substrate and the wiring conductor of the support substrate are directly connected, space saving can be achieved as compared with the case of connecting by wire bonding. When the other end of the electrode wiring of the support substrate and the plurality of electrode pads of the IC substrate are connected by a conductive wire, the conductive wire is provided lower than the surface on which the humidity sensor is formed.

第4の態様では、前記センサチップ基板の複数の電極パッドを基板側面に形成し、この複数の電極パッドと前記IC基板の複数の電極パッドを互いに直交する位置関係で接続する。この態様によれば、センサチップ基板の複数の電極パッドとIC基板の複数の電極パッドが直に接続するので、ワイヤーボンディングにより接続する場合よりも省スペース化を図れる。   In a fourth aspect, a plurality of electrode pads of the sensor chip substrate are formed on a side surface of the substrate, and the plurality of electrode pads and the plurality of electrode pads of the IC substrate are connected in a positional relationship orthogonal to each other. According to this aspect, since the plurality of electrode pads of the sensor chip substrate and the plurality of electrode pads of the IC substrate are directly connected, space saving can be achieved as compared with the case of connecting by wire bonding.

また本発明は、製造方法の第1の態様によれば、湿度センサ及び該湿度センサと電気的に接続した複数の電極パッドを有し、湿度センサ形成面を電極パッド形成面よりも高く設けたセンサチップ基板を多数形成する工程と、単一の支持基板上に、前記多数のセンサチップ基板と各センサチップ基板に対応する多数のIC基板を接着固定し、対をなすセンサチップ基板の複数の電極パッドとIC基板の複数の電極パッドを電気的に接続する工程と、前記センサチップ基板の湿度センサ形成面に金型を押し当てて該金型と前記センサチップ基板、前記IC基板及び前記支持基板の間に生じるキャビティに封止樹脂を充填し、この封止樹脂が硬化した後に前記金型を外す工程と、前記支持基板を、一対のセンサチップ基板とIC基板からなるパッケージ単位で切断する工程とを有することを特徴としている。   According to the first aspect of the manufacturing method of the present invention, the humidity sensor has a plurality of electrode pads electrically connected to the humidity sensor, and the humidity sensor forming surface is provided higher than the electrode pad forming surface. A plurality of sensor chip substrates, a plurality of sensor chip substrates and a plurality of IC chip corresponding to each sensor chip substrate are bonded and fixed on a single support substrate, and a plurality of sensor chip substrates in pairs A step of electrically connecting the electrode pads and a plurality of electrode pads of the IC substrate; and pressing the mold against the humidity sensor forming surface of the sensor chip substrate to thereby form the mold, the sensor chip substrate, the IC substrate, and the support A step of filling a cavity formed between the substrates with a sealing resin, and removing the mold after the sealing resin is cured; and the supporting substrate is a package comprising a pair of sensor chip substrates and an IC substrate. It is characterized by a step of cutting with di units.

前記センサチップ基板の複数の電極パッドと前記IC基板の複数の電極パッドを導電性ワイヤーで接続する場合には、この導電性ワイヤーを前記センサチップ基板の湿度センサ形成面よりも低く設けることが好ましい。   When the plurality of electrode pads of the sensor chip substrate and the plurality of electrode pads of the IC substrate are connected by a conductive wire, the conductive wire is preferably provided lower than the humidity sensor forming surface of the sensor chip substrate. .

前記センサチップ基板は、基板表面を覆う絶縁膜上に、前記湿度センサと該湿度センサに電気的に接続した複数の電極配線を形成する工程と、前記湿度センサを覆う第1の非透湿保護膜を形成する工程と、前記湿度センサの形成されていない位置で前記第1の非透湿保護膜及び前記基板の一部を除去し、前記湿度センサ形成面よりも低い電極パッド形成面を形成する工程と、この電極パッド形成面を覆う絶縁膜を形成する工程と、前記複数の電極配線の端部上に位置する第1の非透湿保護膜を除去し、除去部分に前記複数の電極配線の端部をそれぞれ露出させるコンタクトホールを形成する工程と、このコンタクトホールを介して前記複数の電極配線に接続し、該コンタクトホールから前記電極パッド形成面の絶縁膜上まで引き延ばした引出電極配線を形成する工程と、この引出電極配線及び前記第1の非透湿保護膜を覆う第2の非透湿保護膜を形成する工程と、前記電極パッド形成面上の前記第2の非透湿保護膜を除去し、除去部分に前記引出電極配線の端部を露出させて複数の電極パッドとする工程と、により形成することができる。   The sensor chip substrate includes a step of forming the humidity sensor and a plurality of electrode wirings electrically connected to the humidity sensor on an insulating film covering the substrate surface, and a first non-moisture permeable protection covering the humidity sensor. Forming a film; and removing the first moisture-impermeable protective film and a part of the substrate at a position where the humidity sensor is not formed to form an electrode pad forming surface lower than the humidity sensor forming surface A step of forming an insulating film covering the electrode pad formation surface, removing the first moisture-impermeable protective film located on the end portions of the plurality of electrode wirings, and removing the plurality of electrodes at a removed portion. A step of forming a contact hole exposing each end of the wiring, and a lead connected to the plurality of electrode wirings through the contact hole and extended from the contact hole to the insulating film on the electrode pad formation surface A step of forming an electrode wiring, a step of forming a second non-moisture permeable protective film covering the extraction electrode wiring and the first non-moisture permeable protective film, and the second non-moisture protective film on the electrode pad forming surface. Forming a plurality of electrode pads by removing the moisture-permeable protective film and exposing the end portions of the extraction electrode wiring to the removed portions.

前記センサチップ基板は、別の態様によれば、基板表面に、表面高さを異ならせた高平面部と低平面部及びこの高低平面部の間をつなぐ傾斜面部を形成する工程と、この高平面部、低平面部及び傾斜面部を含む基板表面に絶縁膜を形成する工程と、この絶縁膜の上に、前記高平面部に位置させて前記湿度センサを形成し、該湿度センサと電気的に接続した電極配線を前記高平面部から前記低平面部にかけて前記傾斜面部に沿わせて形成する工程と、この湿度センサを覆う非透湿保護膜を全体的に形成する工程と、前記低平面部上の非透湿保護膜を除去し、除去部分に前記電極配線の端部を露出させて複数の電極パッドとする工程と、により形成することができる。   According to another aspect, the sensor chip substrate includes a step of forming, on the substrate surface, a high plane portion having a different surface height, a low plane portion, and an inclined plane portion connecting the height plane portion, Forming an insulating film on the substrate surface including the flat surface portion, the low flat surface portion, and the inclined surface portion; and forming the humidity sensor on the insulating film so as to be positioned on the high flat surface portion; A step of forming an electrode wiring connected to the lower plane portion along the inclined surface portion, a step of forming a non-moisture permeable protective film covering the humidity sensor, and the lower plane portion. Forming a plurality of electrode pads by removing the non-moisture permeable protective film on the portion and exposing the end portion of the electrode wiring to the removed portion.

また本発明は、製造方法の第2の態様によれば、表裏面の一方と他方に設けた湿度センサと複数の電極パッドを電気的に導通させたセンサチップ基板を多数形成する工程と、前記センサチップ基板の複数の電極パッドに対応する複数の電極配線を形成した単一の支持基板を準備する工程と、この単一の支持基板上に前記多数のセンサチップ基板を接着固定し、前記センサチップ基板の複数の電極パッドと対応する前記支持基板の複数の電極配線の一端部を電気的に接続する工程と、同支持基板上に各センサチップ基板に対応する多数のIC基板を接着固定し、該IC基板の複数の電極パッドと前記支持基板の複数の電極配線の他端部を電気的に接続する工程と、前記センサチップ基板の湿度センサ形成面に金型を押し当てて該金型と前記センサチップ基板、前記IC基板及び前記支持基板の間に生じるキャビティに封止樹脂を充填し、樹脂硬化後に前記金型を外す工程と、前記支持基板を、一対のセンサチップ基板とIC基板からなるパッケージ単位で切断する工程と、を有することを特徴としている。   According to the second aspect of the manufacturing method of the present invention, the step of forming a plurality of sensor chip substrates in which a humidity sensor provided on one and the other of the front and back surfaces and a plurality of electrode pads are electrically connected, A step of preparing a single support substrate on which a plurality of electrode wirings corresponding to a plurality of electrode pads of the sensor chip substrate are formed; and bonding and fixing the plurality of sensor chip substrates on the single support substrate; Electrically connecting one end portions of the plurality of electrode wirings of the support substrate corresponding to the plurality of electrode pads of the chip substrate, and bonding and fixing a number of IC substrates corresponding to the sensor chip substrates on the support substrate; Electrically connecting the plurality of electrode pads of the IC substrate and the other end of the plurality of electrode wirings of the support substrate; and pressing the mold against the humidity sensor forming surface of the sensor chip substrate And the Sen A step of filling a cavity formed between the chip substrate, the IC substrate and the support substrate with a sealing resin, and removing the mold after the resin is cured; and the support substrate is a package comprising a pair of sensor chip substrate and IC substrate And a step of cutting in units.

前記IC基板の複数の電極パッドと前記支持基板の複数の配線導体の他端部は、導電性ワイヤーで接続する場合は、この導電性ワイヤーを前記センサチップ基板の湿度センサ形成面よりも低く設けることが好ましい。   When the plurality of electrode pads of the IC substrate and the other end portions of the plurality of wiring conductors of the support substrate are connected by a conductive wire, the conductive wire is provided lower than the humidity sensor forming surface of the sensor chip substrate. It is preferable.

前記センサチップ基板は、表裏面を電気的に導通させたシリコン基板であって、具体的には、前記シリコン基板の表裏面の一方に、湿度センサ形成エリアを画成するための絶縁体を埋め込み形成する工程と、前記シリコン基板の表裏面の他方に、基板厚さ方向で前記湿度センサ形成エリアに重複させた複数の電極パッド形成エリアを画成するための絶縁体を埋め込み形成する工程と、前記湿度センサ形成エリアに湿度センサを形成する工程と、前記複数の電極パッド形成エリアに、前記シリコン基板を介して前記湿度センサと導通接続する複数の電極パッドを形成する工程と、により形成することができる。あるいは、前記シリコン基板の表裏面の一方に、該表裏面の電気的導通を確保する配線接続エリアを除いて、絶縁体を埋め込み形成する工程と、前記シリコン基板の表裏面の他方に、基板厚さ方向において前記配線接続エリアと重複する位置に所定深さの凹部を形成し、この凹部内に、複数の電極パッドを形成する工程と、前記シリコン基板の表裏面の一方に、前記配線接続エリアを含むように位置させて、湿度センサを形成する工程と、前記シリコン基板の表裏面の他方に、複数の電極パッドを電気的に独立させる開口部を、前記絶縁体を露出させる深さで形成する工程と、により形成することができる。この態様によれば、センサチップ基板自体を配線として用いることができ、基板表裏面に埋め込んだガラス等の絶縁体によって配線間の絶縁性を確保できる。また、基板裏面の凹部内に複数の電極パッドを設ければ、パッド厚さ分のスペースを省略でき、低背化に貢献できる。   The sensor chip substrate is a silicon substrate in which the front and back surfaces are electrically connected. Specifically, an insulator for defining a humidity sensor forming area is embedded in one of the front and back surfaces of the silicon substrate. A step of forming and embedding an insulator for defining a plurality of electrode pad formation areas overlapped with the humidity sensor formation area in the substrate thickness direction on the other of the front and back surfaces of the silicon substrate; Forming a humidity sensor in the humidity sensor forming area, and forming a plurality of electrode pads in the plurality of electrode pad forming areas through the silicon substrate to be electrically connected to the humidity sensor. Can do. Alternatively, a step of embedding an insulator on one of the front and back surfaces of the silicon substrate, excluding a wiring connection area that ensures electrical continuity of the front and back surfaces, and a substrate thickness on the other of the front and back surfaces of the silicon substrate Forming a recess having a predetermined depth at a position overlapping the wiring connection area in the vertical direction, and forming a plurality of electrode pads in the recess; and the wiring connection area on one of the front and back surfaces of the silicon substrate Forming a humidity sensor, and forming an opening for electrically separating a plurality of electrode pads on the other of the front and back surfaces of the silicon substrate at a depth that exposes the insulator. And the process of performing. According to this aspect, the sensor chip substrate itself can be used as the wiring, and insulation between the wirings can be ensured by an insulator such as glass embedded in the front and back surfaces of the substrate. Moreover, if a plurality of electrode pads are provided in the recesses on the back surface of the substrate, a space corresponding to the pad thickness can be omitted, which can contribute to a reduction in height.

また本発明は、製造方法の第3の態様によれば、基板表面に形成した湿度センサと電気的に接続する複数の電極パッドを基板側面に配置したセンサチップ基板を多数形成する工程と、前記センサチップ基板の複数の電極パッドに対応する複数の電極配線を形成した支持基板を準備する工程と、この支持基板上に前記多数のセンサチップ基板を接着固定し、該センサチップ基板の複数の電極パッドと対応する前記支持基板の複数の電極配線の一端部を互いに直交する位置関係で電気的に接続する工程と、同支持基板上に各センサチップ基板に対応する多数のIC基板を接着固定し、該IC基板の複数の電極パッドと前記支持基板の複数の電極配線の他端部を電気的に接続する工程と、前記センサチップ基板の湿度センサ形成面に金型を押し当てて該金型と前記センサチップ基板、前記IC基板及び前記支持基板の間に生じるキャビティに封止樹脂を充填し、樹脂硬化後に前記金型を外す工程と、前記支持基板を、一対のセンサチップ基板とIC基板からなるパッケージ単位で切断する工程と、を有することを特徴としている。   According to a third aspect of the manufacturing method of the present invention, the step of forming a plurality of sensor chip substrates in which a plurality of electrode pads electrically connected to the humidity sensor formed on the substrate surface is disposed on the side surface of the substrate, A step of preparing a support substrate on which a plurality of electrode wirings corresponding to a plurality of electrode pads of the sensor chip substrate are formed; and the plurality of sensor chip substrates are bonded and fixed on the support substrate, and the plurality of electrodes of the sensor chip substrate Electrically connecting one end portions of the plurality of electrode wirings of the support substrate corresponding to the pads in a mutually orthogonal positional relationship, and bonding and fixing a number of IC substrates corresponding to each sensor chip substrate on the support substrate; Electrically connecting the plurality of electrode pads of the IC substrate to the other end of the plurality of electrode wirings of the support substrate, and pressing a mold against the humidity sensor forming surface of the sensor chip substrate A step of filling a cavity formed between the mold and the sensor chip substrate, the IC substrate and the support substrate with a sealing resin, and removing the mold after the resin is cured; and the support substrate is a pair of sensor chip substrates. And a step of cutting in package units made of an IC substrate.

前記IC基板の複数の電極パッドと前記支持基板の複数の電極配線の他端部を導電性ワイヤーで接続する場合は、この導電性ワイヤーを前記センサチップ基板の湿度センサ形成面よりも低く設けることが好ましい。   When connecting the plurality of electrode pads of the IC substrate and the other end of the plurality of electrode wirings of the support substrate with a conductive wire, the conductive wire is provided lower than the humidity sensor forming surface of the sensor chip substrate. Is preferred.

また本発明は、製造方法の第4の態様によれば、基板表面に形成した湿度センサと電気的に接続する複数の電極パッドを基板側面に配置したセンサチップ基板を多数形成する工程と、単一の支持基板上に、前記多数のセンサチップ基板と各センサチップに対応するIC基板を各々の電極パッドが互いに直交する位置関係で密接させて一対ずつ配置し、接着固定する工程と、互いに直交する位置関係で対向させた前記センサチップ基板と前記IC基板の複数の電極パッドを電気的に接続する工程と、前記センサチップ基板の湿度センサ形成面に金型を押し当てて該金型と前記センサチップ基板、前記IC基板及び前記支持基板の間に生じるキャビティに封止樹脂を充填し、樹脂硬化後に前記金型を外す工程と、前記支持基板を、一対のセンサチップ基板とIC基板からなるパッケージ単位で切断する工程と、を有することを特徴としている。   According to a fourth aspect of the manufacturing method of the present invention, a process for forming a plurality of sensor chip substrates in which a plurality of electrode pads electrically connected to a humidity sensor formed on the substrate surface are arranged on the side surface of the substrate, A plurality of sensor chip substrates and an IC substrate corresponding to each sensor chip are placed in close contact with each other in a positional relationship in which the electrode pads are orthogonal to each other, and bonded and fixed; Electrically connecting the sensor chip substrate and the plurality of electrode pads of the IC substrate facing each other in a positional relationship, and pressing the mold against the humidity sensor forming surface of the sensor chip substrate, A step of filling a cavity formed between the sensor chip substrate, the IC substrate and the support substrate with a sealing resin and removing the mold after the resin is cured; It is characterized by comprising a step of cutting a package unit consisting flop substrate and the IC substrate.

上記製造方法の第1ないし第4の態様において、前記支持基板には、前記封止樹脂で覆われた面とは反対側の面に、前記IC基板を外部回路と接続するためのSMD端子を形成することが好ましい。   In the first to fourth aspects of the manufacturing method, the support substrate is provided with an SMD terminal for connecting the IC substrate to an external circuit on a surface opposite to the surface covered with the sealing resin. It is preferable to form.

本発明によれば、センサチップ基板の湿度センサを形成した湿度センサ形成面が電極パッド形成面よりも高い位置にあり、この湿度センサ形成面と同一の高さまで封止樹脂が設けられるので、湿度センサのみがパッケージ表面に露出し、かつ、センサチップ基板とIC基板の電気配線部を封止するためのパッケージ高さ方向のスペースが省略されて低背化を図れる。同時に、センサチップ基板、IC基板及びその電気配線部は封止樹脂によって埋め込まれるので、腐食や衝撃に強く、信頼性を高められる。   According to the present invention, the humidity sensor forming surface on which the humidity sensor of the sensor chip substrate is formed is located higher than the electrode pad forming surface, and the sealing resin is provided up to the same height as the humidity sensor forming surface. Only the sensor is exposed on the surface of the package, and a space in the package height direction for sealing the electric wiring portions of the sensor chip substrate and the IC substrate is omitted, and the height can be reduced. At the same time, since the sensor chip substrate, the IC substrate, and the electric wiring portion thereof are embedded with the sealing resin, the sensor chip substrate, the IC substrate, and the electric wiring portion are resistant to corrosion and impact, and reliability is improved.

本発明の第1実施形態による湿度センサパッケージの外観斜視図である。1 is an external perspective view of a humidity sensor package according to a first embodiment of the present invention. 同湿度センサパッケージの構造を模式的に示す断面図である。It is sectional drawing which shows the structure of the humidity sensor package typically. 湿度センサの構成を示す平面図である。It is a top view which shows the structure of a humidity sensor. 湿度センサの感湿部を示す断面図である。It is sectional drawing which shows the moisture sensitive part of a humidity sensor. 湿度センサの固定部を示す断面図である。It is sectional drawing which shows the fixing | fixed part of a humidity sensor. 図3のA−A線に沿う断面図である。It is sectional drawing which follows the AA line of FIG. 湿度センサパッケージの封止工程を説明する断面図である。It is sectional drawing explaining the sealing process of a humidity sensor package. 第1の態様によるセンサチップ基板の製造工程の一工程を説明する平面図である。It is a top view explaining 1 process of the manufacturing process of the sensor chip board | substrate by a 1st aspect. 図8の工程を、感湿部から下部電極配線にかかる断面(図3のA−A線に沿う断面)において示す断面図である。It is sectional drawing which shows the process of FIG. 8 in the cross section (cross section which follows the AA line of FIG. 3) concerning a lower electrode wiring from a moisture sensitive part. 図9の次工程を示す断面図である。FIG. 10 is a cross-sectional view showing the next step of FIG. 9. 図10の次工程を示す断面図である。It is sectional drawing which shows the next process of FIG. 図11の次工程を示す断面図である。FIG. 12 is a cross-sectional view showing a next step of FIG. 11. 図12の次工程を示す断面図である。It is sectional drawing which shows the next process of FIG. 図13の次工程を示す断面図である。It is sectional drawing which shows the next process of FIG. 図14の次工程を示す断面図である。It is sectional drawing which shows the next process of FIG. 図15の次工程を示す断面図である。FIG. 16 is a cross-sectional view showing a next step of FIG. 15. 第2の態様によるセンサチップ基板の製造工程の一工程を、感湿部から上部電極配線にかかる断面(図3のB−B線に沿う断面)において示す断面図である。It is sectional drawing which shows 1 process of the manufacturing process of the sensor chip board | substrate by a 2nd aspect in the cross section (cross section which follows the BB line of FIG. 3) concerning an upper electrode wiring from a moisture sensitive part. 図17の次工程を示す断面図である。FIG. 18 is a cross-sectional view showing a next step of FIG. 17. 図18の次工程を示す断面図である。It is sectional drawing which shows the next process of FIG. 図19の次工程を示す断面図である。FIG. 20 is a cross-sectional view showing the next step of FIG. 19. 図20の次工程を示す断面図である。It is sectional drawing which shows the next process of FIG. 図21の次工程を示す断面図である。FIG. 22 is a cross-sectional view showing a next step of FIG. 21. 図22の次工程を示す断面図である。FIG. 23 is a cross-sectional view showing a next process of FIG. 22. 図23の次工程を示す断面図である。FIG. 24 is a cross-sectional view showing the next step of FIG. 23. 図24の次工程を示す断面図である。FIG. 25 is a cross-sectional view showing a next step of FIG. 24. 図25の次工程を示す断面図である。FIG. 26 is a cross-sectional view showing the next step of FIG. 25. 本発明の第2実施形態による湿度センサパッケージの外観斜視図である。It is an external appearance perspective view of the humidity sensor package by 2nd Embodiment of this invention. 同湿度センサパッケージの構造を模式的に示す断面図である。It is sectional drawing which shows the structure of the humidity sensor package typically. 第2実施形態のセンサチップ基板の製造工程の一工程を示す断面図である。It is sectional drawing which shows 1 process of the manufacturing process of the sensor chip board | substrate of 2nd Embodiment. 図29の工程を示す平面図である。FIG. 30 is a plan view showing a step of FIG. 29. 図29の次工程を示す断面図である。FIG. 30 is a cross-sectional view showing a next process of FIG. 29. 図31の次工程を示す断面図である。FIG. 32 is a cross-sectional view showing a next step of FIG. 31. 図32の次工程を示す断面図である。FIG. 33 is a cross-sectional view showing the next step of FIG. 32. 図33の工程を示す平面図である。It is a top view which shows the process of FIG. 図33の次工程を示す断面図である。FIG. 34 is a cross-sectional view showing the next step of FIG. 33. 図35の工程を示す平面図である。FIG. 36 is a plan view showing a step of FIG. 35. 図35の次工程を示す断面図である。FIG. 36 is a cross-sectional view showing the next step of FIG. 35. 図37の工程を示す平面図である。It is a top view which shows the process of FIG. 図37の次工程を示す断面図である。FIG. 38 is a cross-sectional view showing a next process of FIG. 37. 図39の次工程を示す断面図である。FIG. 40 is a cross-sectional view showing a next process of FIG. 39. 別態様による、第2実施形態のセンサチップ基板の製造工程の一工程を示す断面図である。It is sectional drawing which shows 1 process of the manufacturing process of the sensor chip board | substrate of 2nd Embodiment by another aspect. 図41の次工程を示す断面図である。FIG. 42 is a cross-sectional view showing a next process of FIG. 41. 図42の次工程を示す断面図である。FIG. 43 is a cross-sectional view showing the next step of FIG. 42. 図43の次工程を示す断面図である。FIG. 44 is a cross-sectional view showing the next step of FIG. 43. 図44の次工程を示す断面図である。FIG. 45 is a cross-sectional view showing the next process of FIG. 44. 図45の次工程を示す断面図である。FIG. 46 is a cross-sectional view showing the next step of FIG. 45. 図46の工程を示す平面図である。It is a top view which shows the process of FIG. 本発明の第3実施形態による湿度センサパッケージ封止前の状態を示す外観斜視図である。It is an external appearance perspective view which shows the state before the humidity sensor package sealing by 3rd Embodiment of this invention. 同湿度センサパッケージの封止前の状態を上から見て示す平面図である。It is a top view which shows the state before sealing of the same humidity sensor package seeing from the top. 同湿度センサパッケージの封止前の状態を側面から見て示す側面図である。It is a side view which shows the state before sealing of the humidity sensor package seen from the side. 本発明の第4実施形態による湿度センサパッケージの封止前の状態を示す外観斜視図である。It is an external appearance perspective view which shows the state before sealing of the humidity sensor package by 4th Embodiment of this invention. 同湿度センサパッケージの封止前の状態を上から見て示す平面図である。It is a top view which shows the state before sealing of the same humidity sensor package seeing from the top. 同湿度センサパッケージの封止前の状態を側面から見て示す側面図である。It is a side view which shows the state before sealing of the humidity sensor package seen from the side.

図1〜図26は、本発明の第1実施形態を示している。図1は第1実施形態による湿度センサパッケージ1を示す外観斜視図、図2は湿度センサパッケージ1の主要構成を模式的に示す断面図である。   1 to 26 show a first embodiment of the present invention. FIG. 1 is an external perspective view showing the humidity sensor package 1 according to the first embodiment, and FIG. 2 is a cross-sectional view schematically showing the main configuration of the humidity sensor package 1.

湿度センサパッケージ1は、支持基板10の表面10aに接着固定したセンサチップ基板20とIC基板50を有し、センサチップ基板20の湿度センサ21(感湿部22の高分子感湿膜25)を除いてその表面1aがすべて封止樹脂60で覆われている。湿度センサパッケージ1の底面(支持基板10の裏面10b)には、外部実装可能なSMD(Surface Mount Device)端子11が複数設けられている。   The humidity sensor package 1 has a sensor chip substrate 20 and an IC substrate 50 that are bonded and fixed to the surface 10a of the support substrate 10, and the humidity sensor 21 (the polymer moisture sensitive film 25 of the moisture sensitive portion 22) of the sensor chip substrate 20 is provided. Except for this, the entire surface 1 a is covered with the sealing resin 60. A plurality of SMD (Surface Mount Device) terminals 11 that can be externally mounted are provided on the bottom surface of the humidity sensor package 1 (the back surface 10b of the support substrate 10).

センサチップ基板20は、例えばSi層20aの表面に絶縁膜20bを有するシリコン基板からなる。このセンサチップ基板20の表面には、表面高さの異なる高平面部20cと低平面部20e、この高低平面部20c、20eを滑らかに連続させる傾斜面部20dが形成されている。具体的に、高平面部20cと低平面部20eの表面高さの差は100〜300μm程度である。   The sensor chip substrate 20 is made of, for example, a silicon substrate having an insulating film 20b on the surface of the Si layer 20a. On the surface of the sensor chip substrate 20, a high flat surface portion 20c and a low flat surface portion 20e having different surface heights, and an inclined surface portion 20d that smoothly connects the high and low flat surface portions 20c and 20e are formed. Specifically, the difference in surface height between the high flat surface portion 20c and the low flat surface portion 20e is about 100 to 300 μm.

センサチップ基板20の基板表面には、高平面部20cに位置させて、吸収または放出した水分量に応じて誘電率が変化する高分子感湿材料を誘電体とした静電容量型の湿度センサ21が形成されている。湿度センサ21は、湿度によって静電容量が変化する感湿部22と、湿度によらず一定の静電容量を保持する固定部23を有する。   A capacitance-type humidity sensor using a polymer moisture-sensitive material whose dielectric constant is changed according to the amount of absorbed or released water, as a dielectric, on the substrate surface of the sensor chip substrate 20. 21 is formed. The humidity sensor 21 includes a humidity sensing unit 22 whose capacitance changes depending on humidity, and a fixed unit 23 that holds a constant capacitance regardless of humidity.

図3は、湿度センサ21の構成を示す平面図である。図4は感湿部22を示す断面図(図3のB−B線に沿う断面図)、図5は固定部23を示す断面図(図3のC−C線に沿う断面図)、図6は図3のA−A線に沿う断面図である。図3では非透湿保護膜28を図示省略してある。   FIG. 3 is a plan view showing the configuration of the humidity sensor 21. 4 is a cross-sectional view showing the moisture sensitive portion 22 (cross-sectional view taken along line BB in FIG. 3), and FIG. 5 is a cross-sectional view showing the fixed portion 23 (cross-sectional view taken along line CC in FIG. 3). 6 is a cross-sectional view taken along the line AA of FIG. In FIG. 3, the non-moisture permeable protective film 28 is not shown.

感湿部22と固定部23は、図3に示すように、感湿部22と固定部23の中間位置に想定した仮想中心線Xに関してミラー反転の関係にあり、同一の電極材料及び誘電材料を用いて同一のプロセスで形成された下部電極膜24、高分子感湿膜25及び上部電極膜26によるほぼ同一の平行平板構造をなしている。より具体的には、下部電極膜24は平面矩形状で感湿部22と固定部23にそれぞれ形成され、高分子感湿膜25は下部電極膜24よりも若干大きな平面矩形状で感湿部22と固定部23の下部電極膜24上にそれぞれ形成され、上部電極膜26は下部電極膜24と同等の平面矩形状で感湿部22と固定部23の高分子感湿膜25上にそれぞれ形成されている。高分子感湿膜25の膜厚は下部電極膜24と上部電極膜26の間隔dに等しく、下部電極膜24と上部電極膜26の間に蓄積される静電容量Cは、高分子感湿膜25の誘電率ε、下部電極膜24と上部電極膜26の間隔dと対向面積Sで決定される(C=εS/d)。感湿部22の上部電極膜26Aには高分子感湿膜25を露出させる開口部27を多数設けているが、固定部23の上部電極膜26Bには開口部を設けていない。多数の開口部27は、下部電極膜24と対向する領域に左右上下方向に所定間隔をあけて並び、平面矩形状をなしている。開口部27の数、平面形状及び形成位置は任意である。感湿部22及び固定部23の上部電極膜26は、外気との水分授受を遮断する非透湿保護膜28で覆われている。下部電極膜24及び上部電極膜26は例えばAl、Ta、Ti、NiFe、Ni等の電極材料からなり、高分子感湿膜25は例えばポリイミドからなり、非透湿保護膜28は例えば窒化シリコン膜(SiNx膜)やSiO2膜、Al23/SiO2積層膜、SiO2/SiN積層膜等からなる。 As shown in FIG. 3, the moisture sensitive portion 22 and the fixed portion 23 are in a mirror-inverted relationship with respect to the virtual center line X assumed at an intermediate position between the moisture sensitive portion 22 and the fixed portion 23, and have the same electrode material and dielectric material. Are formed by the same process using the lower electrode film 24, the polymer moisture sensitive film 25, and the upper electrode film 26 to form substantially the same parallel plate structure. More specifically, the lower electrode film 24 has a flat rectangular shape and is formed on each of the moisture sensitive portion 22 and the fixing portion 23, and the polymer moisture sensitive film 25 has a flat rectangular shape slightly larger than the lower electrode film 24 and has a moisture sensitive portion. 22 and the lower electrode film 24 of the fixing part 23, respectively, and the upper electrode film 26 has a planar rectangular shape equivalent to the lower electrode film 24 and is respectively formed on the moisture-sensitive part 22 and the polymer moisture-sensitive film 25 of the fixing part 23. Is formed. The film thickness of the polymer moisture sensitive film 25 is equal to the distance d between the lower electrode film 24 and the upper electrode film 26, and the capacitance C accumulated between the lower electrode film 24 and the upper electrode film 26 is the polymer moisture sensitive film. It is determined by the dielectric constant ε of the film 25, the distance d between the lower electrode film 24 and the upper electrode film 26, and the facing area S (C = εS / d). The upper electrode film 26A of the moisture sensitive part 22 is provided with many openings 27 for exposing the polymer moisture sensitive film 25, but the upper electrode film 26B of the fixed part 23 is not provided with any openings. The large number of openings 27 are arranged in a region facing the lower electrode film 24 at predetermined intervals in the left-right and up-down directions, and have a planar rectangular shape. The number, the planar shape, and the formation position of the openings 27 are arbitrary. The upper electrode film 26 of the moisture sensitive part 22 and the fixing part 23 is covered with a non-moisture permeable protective film 28 that blocks moisture exchange with the outside air. The lower electrode film 24 and the upper electrode film 26 are made of an electrode material such as Al, Ta, Ti, NiFe, Ni, etc., the polymer moisture sensitive film 25 is made of polyimide, for example, and the moisture-impermeable protective film 28 is made of, for example, a silicon nitride film. (SiNx film), SiO 2 film, Al 2 O 3 / SiO 2 laminated film, SiO 2 / SiN laminated film, or the like.

感湿部22では、上部電極膜26に設けた多数の開口部27から高分子感湿膜25が雰囲気中に露出し、雰囲気中の湿度(水分量)に応じて高分子感湿膜25の吸収または放出する水分量が増減して誘電率εが変化し、下部電極膜24と上部電極膜26の間の静電容量(センサ容量)C20が変化する。一方、固定部23では、高分子感湿膜25が非透湿保護膜28及び上部電極膜26により覆われて雰囲気に露出しないので、雰囲気中の湿度(水分量)が変化しても該高分子感湿膜25中の水分量は変化せず、誘電率εも変化しない。これにより、下部電極膜24と上部電極膜26の間には一定の静電容量(固定容量)C30が保持される。   In the moisture sensitive portion 22, the polymer moisture sensitive film 25 is exposed to the atmosphere from a large number of openings 27 provided in the upper electrode film 26, and the polymer moisture sensitive film 25 is exposed according to the humidity (water content) in the atmosphere. The amount of moisture absorbed or released is increased or decreased to change the dielectric constant ε, and the capacitance (sensor capacitance) C20 between the lower electrode film 24 and the upper electrode film 26 is changed. On the other hand, in the fixing portion 23, the polymer moisture-sensitive film 25 is covered with the moisture-impermeable protective film 28 and the upper electrode film 26 and is not exposed to the atmosphere. Therefore, even if the humidity (water content) in the atmosphere changes, The amount of water in the molecular moisture sensitive film 25 does not change, and the dielectric constant ε does not change. As a result, a constant capacitance (fixed capacitance) C30 is held between the lower electrode film 24 and the upper electrode film 26.

またセンサチップ基板20の基板表面には、高平面部20cから低平面部20eにかけて、湿度センサ21の下部電極膜24及び上部電極膜26と電気的に接続した下部電極配線34及び上部電極配線36が傾斜面部20dに沿って形成され、低平面部20eに複数の電極パッド35が形成されている。下部電極配線34は、感湿部22と固定部23の下部電極膜24に共通で備えられていて、その一端部側が感湿部22と固定部23の中間位置(仮想中心線X)で分岐してそれぞれの下部電極膜24に接続し、他端部側が電極パッド35に接続している。上部電極配線36は、感湿部22と固定部23の上部電極膜26に個別に備えられていて、一端部側で上部電極膜26に接続し、他端部側で電極パッド35に接続している。これら下部電極配線34、上部電極配線36及び複数の電極パッド35は、例えばAl、Ta、Ti、NiFe、Ni、Auまたはその積層膜等の電極材料からなる。この下部電極配線34及び上部電極配線36は、非透湿保護膜28で覆われており、高平面部20c上に位置する一端部側が封止樹脂60で覆われていないが、非透湿保護膜28によって腐食や衝撃から保護されている。   Further, on the substrate surface of the sensor chip substrate 20, a lower electrode wiring 34 and an upper electrode wiring 36 that are electrically connected to the lower electrode film 24 and the upper electrode film 26 of the humidity sensor 21 from the high flat surface portion 20c to the low flat surface portion 20e. Is formed along the inclined surface portion 20d, and a plurality of electrode pads 35 are formed on the low flat surface portion 20e. The lower electrode wiring 34 is provided in common to the lower electrode film 24 of the moisture sensitive portion 22 and the fixed portion 23, and one end thereof branches at an intermediate position (virtual center line X) between the moisture sensitive portion 22 and the fixed portion 23. Thus, each lower electrode film 24 is connected, and the other end side is connected to the electrode pad 35. The upper electrode wiring 36 is individually provided on the upper electrode film 26 of the moisture sensitive portion 22 and the fixing portion 23, and is connected to the upper electrode film 26 on one end side and connected to the electrode pad 35 on the other end side. ing. The lower electrode wiring 34, the upper electrode wiring 36, and the plurality of electrode pads 35 are made of an electrode material such as Al, Ta, Ti, NiFe, Ni, Au, or a laminated film thereof. The lower electrode wiring 34 and the upper electrode wiring 36 are covered with a moisture-impermeable protective film 28, and one end portion located on the high plane portion 20c is not covered with the sealing resin 60. The film 28 protects against corrosion and impact.

上記センサチップ基板20において、湿度センサ形成面は高平面部20c、電極パッド形成面は低平面部20eである。   In the sensor chip substrate 20, the humidity sensor forming surface is the high flat surface portion 20c, and the electrode pad forming surface is the low flat surface portion 20e.

一方、IC基板50は、センサチップ基板20の複数の電極パッド35に対応する複数の電極パッド55を有し、湿度センサ21の出力変化を検出する制御回路基板である。より具体的には、湿度センサ21のセンサ容量C20と固定容量C30の差分ΔC(=C20−C30)を電圧に変換して外部回路へ出力する機能を有している。このIC基板50は、図2に示されるように、センサチップ基板20よりも薄板で構成され、その電極パッド形成面(表面)50aがセンサチップ基板20の電極パッド形成面(低平面部20e)よりも低くなっている。   On the other hand, the IC substrate 50 is a control circuit substrate that has a plurality of electrode pads 55 corresponding to the plurality of electrode pads 35 of the sensor chip substrate 20 and detects an output change of the humidity sensor 21. More specifically, it has a function of converting a difference ΔC (= C20−C30) between the sensor capacitance C20 of the humidity sensor 21 and the fixed capacitance C30 into a voltage and outputting the voltage to an external circuit. As shown in FIG. 2, the IC substrate 50 is configured to be thinner than the sensor chip substrate 20, and its electrode pad forming surface (surface) 50 a is the electrode pad forming surface (low flat surface portion 20 e) of the sensor chip substrate 20. Is lower than.

センサチップ基板20の複数の電極パッド35とIC基板50の複数の電極パッド55は、例えばAuからなる導電性ワイヤー51を介して電気的に接続されている。導電性ワイヤー51の表面高さは、センサチップ基板20の湿度センサ形成面(高平面部20c)より低い。   The plurality of electrode pads 35 of the sensor chip substrate 20 and the plurality of electrode pads 55 of the IC substrate 50 are electrically connected via conductive wires 51 made of, for example, Au. The surface height of the conductive wire 51 is lower than the humidity sensor forming surface (the high flat surface portion 20 c) of the sensor chip substrate 20.

IC基板50には、センサチップ基板用の複数の電極パッド55とは別に、外部接続用の電極パッド56が備えられている。電極パッド56は、例えばAuからなる導電性ワイヤー52によって、支持基板10の表面10aに設けたコンタクト導体10cと電気的に接続されている。この導電性ワイヤー52の表面高さもセンサチップ基板20の湿度センサ形成面(高平面部20c)より低くなっている。コンタクト導体10cは、支持基板10の表裏面10a、10bを貫通するスルーホール導体10dを介して裏面10bのSMD端子11に導通接続している。このSMD端子11を介してIC基板50に接続される外部回路は、湿度センサ21の出力(容量差分ΔCに対応する電圧)から湿度変化(相対湿度)を検知できる。   In addition to the plurality of electrode pads 55 for the sensor chip substrate, the IC substrate 50 is provided with electrode pads 56 for external connection. The electrode pad 56 is electrically connected to a contact conductor 10c provided on the surface 10a of the support substrate 10 by a conductive wire 52 made of, for example, Au. The surface height of the conductive wire 52 is also lower than the humidity sensor forming surface (high flat surface portion 20 c) of the sensor chip substrate 20. The contact conductor 10c is conductively connected to the SMD terminal 11 on the back surface 10b through a through-hole conductor 10d that penetrates the front and back surfaces 10a and 10b of the support substrate 10. An external circuit connected to the IC substrate 50 via the SMD terminal 11 can detect humidity change (relative humidity) from the output of the humidity sensor 21 (voltage corresponding to the capacity difference ΔC).

上記構成の湿度センサパッケージ1は、次のように製造する。   The humidity sensor package 1 having the above configuration is manufactured as follows.

先ず、図2に示すように、単一の支持基板10の表面10aに、多数のセンサチップ基板20と多数のIC基板50を一対ずつ接着固定する。   First, as shown in FIG. 2, a large number of sensor chip substrates 20 and a large number of IC substrates 50 are bonded and fixed to the surface 10 a of a single support substrate 10.

次に、同図2に示すように、対応するセンサチップ基板20の複数の電極パッド35とIC基板50の複数の電極パッド55を導電性ワイヤー51によって電気的に接続し、さらに、IC基板50の外部接続用の電極パッド56と支持基板10のコンタクト導体10cを導電性ワイヤー52によって電気的に接続する。ここで、湿度センサ形成面と電極パッド形成面の表面高さの差は100〜300μm程度、また、湿度センサ形成面とIC基板50の電極パッド形成面の表面高さの差は50〜200μm程度あるので、導電性ワイヤー51、52の表面高さは、センサチップ基板20の湿度センサ形成面(高平面部20c)よりも低くなる。   Next, as shown in FIG. 2, the plurality of electrode pads 35 of the corresponding sensor chip substrate 20 and the plurality of electrode pads 55 of the IC substrate 50 are electrically connected by the conductive wires 51, and further, the IC substrate 50 The electrode pads 56 for external connection and the contact conductors 10c of the support substrate 10 are electrically connected by the conductive wires 52. Here, the difference in surface height between the humidity sensor forming surface and the electrode pad forming surface is about 100 to 300 μm, and the difference in surface height between the humidity sensor forming surface and the electrode pad forming surface of the IC substrate 50 is about 50 to 200 μm. Therefore, the surface height of the conductive wires 51 and 52 is lower than the humidity sensor forming surface (the high flat surface portion 20 c) of the sensor chip substrate 20.

続いて、図7に示すように、センサチップ基板20の湿度センサ形成面(高平面部20c)に金型61を当てつけた状態で、該金型61とセンサチップ基板20(傾斜面部20d、低平面部20e)、IC基板50及び支持基板10との間に生じるキャビティ62内に封止樹脂60を充填し、封止樹脂60が硬化したら金型61を外す。図7は、湿度センサパッケージの封止工程を模式的に説明する断面図(図2に対応)である。金型61をセンサチップ基板20の湿度センサ形成面(高平面部20c)に押し当てているので、封止樹脂50の表面とセンサチップ基板20の湿度センサ形成面(高平面部20c)は同一の高さ位置となる。この工程により、多数のセンサチップ基板20及びIC基板50は単一の支持基板10上で一括封止でき、封止工程が容易となる。センサチップ基板20とIC基板50は、湿度センサ形成面上に位置する湿度センサ21と上下電極配線34、36の一端部を除いて封止樹脂60内に完全に埋め込まれるので、ワイヤーボンディング部を含む電気配線部及びIC基板50は腐食や衝撃に強く、信頼性が向上する。封止樹脂60には、例えばエポキシ樹脂またはフィラーを混入したエポキシ樹脂を用いる。   Subsequently, as shown in FIG. 7, the mold 61 and the sensor chip substrate 20 (the inclined surface portion 20d, the low surface portion 20d) are placed in a state where the mold 61 is brought into contact with the humidity sensor forming surface (the high flat surface portion 20c) of the sensor chip substrate 20. The sealing resin 60 is filled in the cavity 62 formed between the flat portion 20e), the IC substrate 50 and the support substrate 10, and the mold 61 is removed when the sealing resin 60 is cured. FIG. 7 is a cross-sectional view (corresponding to FIG. 2) schematically illustrating the sealing process of the humidity sensor package. Since the mold 61 is pressed against the humidity sensor forming surface (high flat surface portion 20c) of the sensor chip substrate 20, the surface of the sealing resin 50 and the humidity sensor forming surface (high flat surface portion 20c) of the sensor chip substrate 20 are the same. It becomes the height position. By this process, a large number of sensor chip substrates 20 and IC substrates 50 can be collectively sealed on a single support substrate 10, and the sealing process becomes easy. The sensor chip substrate 20 and the IC substrate 50 are completely embedded in the sealing resin 60 except for one end of the humidity sensor 21 and the upper and lower electrode wirings 34 and 36 located on the humidity sensor forming surface. The included electrical wiring portion and the IC substrate 50 are resistant to corrosion and impact, and the reliability is improved. For the sealing resin 60, for example, an epoxy resin or an epoxy resin mixed with a filler is used.

そして、1枚のセンサチップ基板20と1枚のIC基板50からなるパッケージ単位で支持基板10を切断する。分割した各パッケージには、支持基板10の裏面10bに、スルーホール導体10dを介してコンタクト導体10cと導通接続するSMD端子11を形成する。このSMD端子11を介して、IC基板50は外部回路と接続可能になる。   Then, the support substrate 10 is cut in a package unit including one sensor chip substrate 20 and one IC substrate 50. In each divided package, an SMD terminal 11 is formed on the back surface 10b of the support substrate 10 so as to be conductively connected to the contact conductor 10c through the through-hole conductor 10d. The IC substrate 50 can be connected to an external circuit via the SMD terminal 11.

以上により、図1及び図2に示される湿度センサパッケージ1が多数得られる。   As described above, many humidity sensor packages 1 shown in FIGS. 1 and 2 are obtained.

次に、図3〜図6及び図8〜図16を参照し、センサチップ基板20の製造工程について詳細に説明する。図8はセンサチップ基板20の一工程を示す平面図であり、図9〜図16及び図6は、図3のA−A線に沿う断面でセンサチップ基板20の製造工程を示している。   Next, the manufacturing process of the sensor chip substrate 20 will be described in detail with reference to FIGS. 3 to 6 and FIGS. FIG. 8 is a plan view showing one process of the sensor chip substrate 20, and FIGS. 9 to 16 and FIG. 6 show the manufacturing process of the sensor chip board 20 in a cross section taken along the line AA of FIG.

先ず、センサチップ基板20のSi層20aの表面を熱酸化させてSiO2からなる絶縁膜20b1を形成する。 First, an insulating film 20b1 made of SiO 2 surface of the Si layer 20a of the sensor chip substrate 20 by thermal oxidation.

次に、図8及び図9に示すように、センサチップ基板20の絶縁膜20b1上に、下部電極膜24と第1層目の下部電極配線34aを同時に形成する。下部電極膜24は、形成する感湿部と固定部の中間位置に想定した仮想中心線Xに関してミラー反転させた、例えば平面矩形状で形成する。第1層目の下部電極配線34aは、感湿部と固定部の下部電極膜24に共通で、形成する感湿部と固定部の中間位置(仮想中心線X)で分岐して該感湿部と固定部の下部電極膜24にそれぞれ接続する。下部電極膜24及び下部電極配線34aには、例えばAl、Ta、Ti、NiFe、Ni等の電極材料を用いる。   Next, as shown in FIGS. 8 and 9, the lower electrode film 24 and the first-layer lower electrode wiring 34 a are simultaneously formed on the insulating film 20 b 1 of the sensor chip substrate 20. The lower electrode film 24 is formed in, for example, a planar rectangular shape that is mirror-inverted with respect to the virtual center line X assumed at an intermediate position between the moisture-sensitive portion to be formed and the fixed portion. The lower electrode wiring 34a of the first layer is common to the lower electrode film 24 of the moisture sensitive portion and the fixed portion, and branches at an intermediate position (virtual center line X) between the moisture sensitive portion and the fixed portion to be formed. Are connected to the lower electrode film 24 of the fixed part. For the lower electrode film 24 and the lower electrode wiring 34a, for example, an electrode material such as Al, Ta, Ti, NiFe, or Ni is used.

次に、図10に示すように、下部電極膜24の上に、仮想中心線Xに関してミラー反転させた例えば下部電極膜24より若干大きな平面矩形状で、例えばポリイミドからなる高分子感湿膜25を形成する。   Next, as shown in FIG. 10, a polymer moisture-sensitive film 25 made of polyimide, for example, having a planar rectangular shape slightly larger than, for example, the lower electrode film 24 mirror-inverted with respect to the virtual center line X on the lower electrode film 24. Form.

続いて、同図10に示すように、高分子感湿膜25の上に、仮想中心線Xに関してミラー反転させた例えば下部電極膜24とほぼ同等の平面矩形状で、上部電極膜26を形成する。ここで、感湿部側には多数の開口部27を有する上部電極膜26Aを形成し、固定部側には開口部を有さないベタ膜状の上部電極膜26Bを形成する。上部電極膜26には、例えばAl、Ta、Ti、NiFe、Ni等の電極材料を用いる。   Subsequently, as shown in FIG. 10, the upper electrode film 26 is formed on the polymer moisture sensitive film 25 in a plane rectangular shape substantially equivalent to the lower electrode film 24 that is mirror-inverted with respect to the virtual center line X, for example. To do. Here, the upper electrode film 26A having a large number of openings 27 is formed on the moisture sensitive part side, and the solid film-like upper electrode film 26B having no openings is formed on the fixed part side. For the upper electrode film 26, for example, an electrode material such as Al, Ta, Ti, NiFe, or Ni is used.

続いて、同図10に示すように、上記絶縁膜20b1上の湿度センサ構造部(下部電極膜24、高分子感湿膜25、上部電極膜26、下部電極配線34a、上部電極配線36a)を覆う第1の非透湿保護膜28aを形成する。このとき、第1の非透湿保護膜28aは、感湿部側の上部電極膜26Aに設けた開口部27を完全に埋める膜厚で形成する。第1の非透湿保護膜28aにはSiO2膜を用いる。 Subsequently, as shown in FIG. 10, the humidity sensor structure (the lower electrode film 24, the polymer moisture sensitive film 25, the upper electrode film 26, the lower electrode wiring 34a, and the upper electrode wiring 36a) on the insulating film 20b1 is formed. A first non-moisture permeable protective film 28a is formed. At this time, the first non-moisture permeable protective film 28a is formed with a film thickness that completely fills the opening 27 provided in the upper electrode film 26A on the moisture sensitive part side. A SiO 2 film is used for the first moisture-impermeable protective film 28a.

続いて、図11に示すように、反応性イオンエッチング(RIE)により、上記湿度センサ構造部が形成されていないエリアの絶縁膜20b1を除去し、除去部分にセンサチップ基板20のSi層20aを露出させる。   Subsequently, as shown in FIG. 11, the insulating film 20b1 in the area where the humidity sensor structure portion is not formed is removed by reactive ion etching (RIE), and the Si layer 20a of the sensor chip substrate 20 is removed in the removed portion. Expose.

続いて、図12に示すように、ウエットエッチングにより、絶縁膜20b1から露出させたセンサチップ基板20のSi層20aを一部除去する。この工程により、センサチップ基板20の基板表面に高低がつき、湿度センサ構造部を形成した基板表面よりも低い低平面部20e(電極パッド形成エリア)が形成される。そして、湿度センサ構造部を形成した基板表面が高平面部20c(湿度センサ形成面)となり、この高平面部20cと低平面部20eの間に両平面部を20c、20eを滑らかに連続する傾斜面部20dが位置する。   Subsequently, as shown in FIG. 12, a part of the Si layer 20a of the sensor chip substrate 20 exposed from the insulating film 20b1 is removed by wet etching. By this step, the substrate surface of the sensor chip substrate 20 is raised and lowered, and a low flat surface portion 20e (electrode pad formation area) lower than the substrate surface on which the humidity sensor structure portion is formed is formed. The surface of the substrate on which the humidity sensor structure is formed becomes a high flat surface portion 20c (humidity sensor forming surface), and the two flat surface portions 20c and 20e are smoothly and continuously inclined between the high flat surface portion 20c and the low flat surface portion 20e. The surface portion 20d is located.

続いて、図13に示すように、センサチップ基板20のSi層20aが露出している領域に、SiNからなる絶縁膜20b2を形成する。   Subsequently, as shown in FIG. 13, an insulating film 20b2 made of SiN is formed in a region where the Si layer 20a of the sensor chip substrate 20 is exposed.

続いて、図14に示すように、高平面部20cに位置する下部電極配線34a及び上部電極膜26の一端部上の第1の非透湿保護膜28aを一部除去し、該下部電極配線34a及び上部電極膜26(図14では不図示のため図4及び図5参照)を露出させるコンタクトホール37を形成する。   Subsequently, as shown in FIG. 14, the lower electrode wiring 34a located on the high plane portion 20c and the first moisture-impermeable protective film 28a on one end of the upper electrode film 26 are partially removed, and the lower electrode wiring is removed. A contact hole 37 is formed to expose 34a and the upper electrode film 26 (see FIGS. 4 and 5 because they are not shown in FIG. 14).

続いて、図15に示すように、コンタクトホール37に露出させた第1層目の下部電極配線34aに接続し、該コンタクトホール37から低平面部20eまで引き延ばした第2層目の下部電極配線34bを傾斜面部20dに沿って形成する。同時に、コンタクトホール37に露出させた上部電極膜26に接続し、該コンタクトホール37から低平面部20eまで引き延ばした上部電極配線36を傾斜面部20dに沿って形成する。第2層目の下部電極配線34b及び上部電極配線36は、例えばAl、Ta、Ti、NiFe、Ni、Auまたはその積層膜等の電極材料からなる。コンタクトホール37を介して接続した第1層目と第2層目の下部電極配線34a、34bが下部電極配線34となる。   Subsequently, as shown in FIG. 15, the second layer lower electrode wiring 34b connected to the first layer lower electrode wiring 34a exposed in the contact hole 37 and extended from the contact hole 37 to the low flat surface portion 20e is formed. It is formed along the inclined surface portion 20d. At the same time, an upper electrode wiring 36 connected to the upper electrode film 26 exposed in the contact hole 37 and extending from the contact hole 37 to the low flat surface portion 20e is formed along the inclined surface portion 20d. The lower electrode wiring 34b and the upper electrode wiring 36 of the second layer are made of an electrode material such as Al, Ta, Ti, NiFe, Ni, Au, or a laminated film thereof. The lower electrode wirings 34 a and 34 b of the first layer and the second layer connected through the contact hole 37 become the lower electrode wiring 34.

続いて、図16に示すように、第1の非透湿保護膜28a、第2層目の下部電極配線34b及び上部電極配線36を覆う第2の非透湿保護膜28bを形成する。第2の非透湿保護膜28bはSiNで形成する。この第2の非透湿保護膜28bと第1の非透湿保護膜28aの積層構造により、非透湿保護膜28が形成される。   Subsequently, as shown in FIG. 16, a second moisture-impermeable protective film 28b covering the first moisture-impermeable protective film 28a, the second-layer lower electrode wiring 34b, and the upper electrode wiring 36 is formed. The second moisture-impermeable protective film 28b is made of SiN. The moisture-impermeable protective film 28 is formed by a laminated structure of the second moisture-impermeable protective film 28b and the first moisture-impermeable protective film 28a.

続いて、ドライエッチングにより、感湿部側の上部電極膜26に設けた多数の開口部27上の第1、第2の非透湿保護膜28a、28bを除去し、かつ、低平面部20e上に位置させた上下電極配線34、36の他端部上の第2の非透湿保護膜28bを除去する。この第2の非透湿保護膜28bの除去部分に露出させた第2層目の下部電極配線34b、上部電極配線36の他端部がそれぞれ電極パッド35となる。   Subsequently, the first and second moisture-impermeable protective films 28a and 28b on the large number of openings 27 provided in the upper electrode film 26 on the moisture sensitive part side are removed by dry etching, and the low planar part 20e is removed. The second non-moisture permeable protective film 28b on the other end of the upper and lower electrode wirings 34, 36 positioned above is removed. The other end portions of the second electrode lower electrode wiring 34b and the upper electrode wiring 36 exposed at the removed portion of the second moisture-impermeable protective film 28b serve as electrode pads 35, respectively.

以上の工程により、図3〜図6に示されるセンサチップ基板20が得られる。   Through the above steps, the sensor chip substrate 20 shown in FIGS. 3 to 6 is obtained.

次に、図17〜図26を参照し、上述の製造工程(図8〜図16)とは別態様の、センサチップ基板20の製造工程について詳細に説明する。この製造工程で形成した完成状態のセンサチップ基板20の平面図は、図3と同様になる。図17〜図24は、図3のB−B線に沿う断面でセンサチップ基板20の製造工程を示している。図25及び図26は完成状態のセンサチップ基板20を、図3のC−C線に沿う断面及び図3のA−A線に沿う断面で示している。   Next, with reference to FIGS. 17 to 26, the manufacturing process of the sensor chip substrate 20, which is different from the above manufacturing process (FIGS. 8 to 16), will be described in detail. A plan view of the completed sensor chip substrate 20 formed in this manufacturing process is the same as FIG. FIGS. 17-24 has shown the manufacturing process of the sensor chip board | substrate 20 in the cross section which follows the BB line of FIG. 25 and 26 show the sensor chip substrate 20 in a completed state in a cross section taken along line CC in FIG. 3 and a cross section taken along line AA in FIG.

先ず、センサチップ基板20のSi層20aの表面を熱酸化させてSiO2からなる絶縁膜20b1を形成する。 First, an insulating film 20b1 made of SiO 2 surface of the Si layer 20a of the sensor chip substrate 20 by thermal oxidation.

次に、図17に示すように、反応性イオンエッチング(RIE)により、湿度センサ構造部を形成しないエリア(電極パッド形成エリア)の絶縁膜20b1を除去し、除去部分にセンサチップ基板20のSi層20aを露出させる。   Next, as shown in FIG. 17, the insulating film 20b1 in the area (electrode pad forming area) where the humidity sensor structure is not formed is removed by reactive ion etching (RIE), and the Si of the sensor chip substrate 20 is removed in the removed portion. Layer 20a is exposed.

続いて、図18に示すように、ウエットエッチングにより、絶縁膜20b1から露出させたセンサチップ基板20のSi層20aを一部除去する。この工程により、センサチップ基板20の基板表面に高低がつき、絶縁膜20b1で覆われた基板表面よりも低い低平面部20e(電極パッド形成エリア)が形成される。そして、絶縁膜20b1で覆われた基板表面が高平面部20c(湿度センサ形成面)となり、この高平面部20cと低平面部20eの間に両平面部を20c、20eを滑らかに連続する傾斜面部20dが位置する。   Subsequently, as shown in FIG. 18, a part of the Si layer 20a of the sensor chip substrate 20 exposed from the insulating film 20b1 is removed by wet etching. By this step, the height of the substrate surface of the sensor chip substrate 20 is increased, and a lower flat portion 20e (electrode pad formation area) lower than the substrate surface covered with the insulating film 20b1 is formed. The substrate surface covered with the insulating film 20b1 becomes the high flat surface portion 20c (humidity sensor forming surface), and the two flat surface portions 20c and 20e are smoothly inclined between the high flat surface portion 20c and the low flat surface portion 20e. The surface portion 20d is located.

続いて、図19に示すように、センサチップ基板20のSi層20aが露出している領域に、SiNからなる絶縁膜20b2を形成する。   Subsequently, as shown in FIG. 19, an insulating film 20b2 made of SiN is formed in a region where the Si layer 20a of the sensor chip substrate 20 is exposed.

続いて、図20に示すように、絶縁膜20b1で覆われた高平面部20c上に下部電極膜24を形成し、同時に、下部電極配線34及び上部電極配線36を形成する。ここで、下部電極膜24は、形成する感湿部と固定部の中間位置に想定した仮想中心線Xに関してミラー反転させた、例えば平面矩形状で形成する。図20では不図示の下部電極配線34は、高平面部20cで一端部側が仮想中心線Xで分岐して感湿部と固定部の下部電極膜24に接続し、この高平面部20cから低平面部20eにかけて傾斜面部20dに沿って形成する(図26参照)。上部電極配線36は、後工程で形成する上部電極膜の端部と高平面部20cで低平面部20eにかけて傾斜面部20dに沿って形成する。下部電極膜24、下部電極配線34及び上部電極配線36には、例えばAl、Ta、Ti、NiFe、Ni等の電極材料を用いる。   Subsequently, as shown in FIG. 20, the lower electrode film 24 is formed on the high flat surface portion 20c covered with the insulating film 20b1, and at the same time, the lower electrode wiring 34 and the upper electrode wiring 36 are formed. Here, the lower electrode film 24 is formed in, for example, a planar rectangular shape that is mirror-reversed with respect to the virtual center line X assumed at the intermediate position between the moisture-sensitive portion to be formed and the fixed portion. In FIG. 20, the lower electrode wiring 34 (not shown) is branched at the high plane portion 20c at one end side by a virtual center line X and is connected to the lower electrode film 24 of the moisture sensitive portion and the fixed portion. It forms along the inclined surface part 20d over the flat part 20e (refer FIG. 26). The upper electrode wiring 36 is formed along the inclined surface portion 20d from the end portion of the upper electrode film to be formed in a later process and the high flat surface portion 20c to the low flat surface portion 20e. For the lower electrode film 24, the lower electrode wiring 34, and the upper electrode wiring 36, for example, an electrode material such as Al, Ta, Ti, NiFe, or Ni is used.

続いて、図21に示すように、下部電極膜24の上に、仮想中心線Xに関してミラー反転させた例えば下部電極膜24より若干大きな平面矩形状で、例えばポリイミドからなる高分子感湿膜25を形成する。   Subsequently, as shown in FIG. 21, a polymer moisture-sensitive film 25 made of polyimide, for example, having a planar rectangular shape slightly larger than, for example, the lower electrode film 24 mirror-inverted with respect to the virtual center line X on the lower electrode film 24. Form.

続いて、図22に示すように、高分子感湿膜25の上に、仮想中心線Xに関してミラー反転させた例えば下部電極膜24とほぼ同等の平面矩形状で、上部電極膜26を形成する。上部電極膜26の端部は、下部電極膜24と同時に形成した上部電極配線36に接続させる。ここで、感湿部側には多数の開口部27を有する上部電極膜26Aを形成し、固定部側には開口部を有さないベタ膜状の上部電極膜26Bを形成する。上部電極膜26には、例えばAl、Ta、Ti、NiFe、Ni等の電極材料を用いる。   Subsequently, as shown in FIG. 22, the upper electrode film 26 is formed on the polymer moisture sensitive film 25 in a planar rectangular shape that is substantially equivalent to the lower electrode film 24 that is mirror-reversed with respect to the virtual center line X, for example. . The end of the upper electrode film 26 is connected to the upper electrode wiring 36 formed simultaneously with the lower electrode film 24. Here, the upper electrode film 26A having a large number of openings 27 is formed on the moisture sensitive part side, and the solid film-like upper electrode film 26B having no openings is formed on the fixed part side. For the upper electrode film 26, for example, an electrode material such as Al, Ta, Ti, NiFe, or Ni is used.

続いて、図23に示すように、上記湿度センサ構造部(下部電極膜24、高分子感湿膜25、上部電極膜26)、下部電極配線34及び上部電極配線36を覆う非透湿保護膜28を形成する。非透湿保護膜28には例えばSiNを用いる。   Subsequently, as shown in FIG. 23, a moisture-impermeable protective film that covers the humidity sensor structure (the lower electrode film 24, the polymer moisture sensitive film 25, the upper electrode film 26), the lower electrode wiring 34, and the upper electrode wiring 36. 28 is formed. For example, SiN is used for the moisture-impermeable protective film 28.

そして、図24に示すように、感湿部側の上部電極膜26に設けた多数の開口部27上の非透湿保護膜28を除去する。同時に、下部電極配線34及び上部電極膜36の低平面部20e上に位置させた端部上の非透湿保護膜28を除去し、除去部分に露出させた下部電極配線34及び上部電極膜36の端部をそれぞれ電極パッド35とする。   Then, as shown in FIG. 24, the moisture-impermeable protective film 28 on the large number of openings 27 provided in the upper electrode film 26 on the moisture sensitive part side is removed. At the same time, the non-moisture permeable protective film 28 on the end portion of the lower electrode wiring 34 and the upper electrode film 36 located on the low flat surface portion 20e is removed, and the lower electrode wiring 34 and the upper electrode film 36 exposed to the removed portion are removed. These end portions are referred to as electrode pads 35, respectively.

以上の工程により、図3、図24〜図26に示されるセンサチップ基板20が得られる。   Through the above steps, the sensor chip substrate 20 shown in FIGS. 3 and 24 to 26 is obtained.

図27〜図47は、本発明の第2実施形態を示している。図27は、第2実施形態による湿度センサパッケージ2を示す外観斜視図、図28は湿度センサパッケージ2の主要構成を模式的に示す断面図である。   27 to 47 show a second embodiment of the present invention. FIG. 27 is an external perspective view showing the humidity sensor package 2 according to the second embodiment, and FIG. 28 is a cross-sectional view schematically showing the main configuration of the humidity sensor package 2.

第2実施形態による湿度センサパッケージ2は、センサチップ基板220の表裏面220f、220gに湿度センサ21と該湿度センサ21に導通接続した複数の電極パッド235を設け、この複数の電極パッド235を、支持基板10の表面10aに設けた電極配線10eを介してIC基板50の複数の電極パッド55と電気的に接続したものである。   In the humidity sensor package 2 according to the second embodiment, the front and back surfaces 220f and 220g of the sensor chip substrate 220 are provided with a humidity sensor 21 and a plurality of electrode pads 235 electrically connected to the humidity sensor 21. This is electrically connected to a plurality of electrode pads 55 of the IC substrate 50 through electrode wirings 10e provided on the surface 10a of the support substrate 10.

センサチップ基板220は、例えばホウ素やリン等の不純物ドーピングにより抵抗率を下げた低抵抗シリコン基板であって、その表裏面220f、220gが電気的に導通している。センサチップ基板220の表裏面220f、220gには絶縁体221a、221b(図30、図33)が埋め込まれており、この絶縁体221a、221bで画成された湿度センサ形成エリア及び電極パッド形成エリアにおいて、基板自体が、表面220f側の湿度センサ21の下部電極膜24及び上部電極膜26と裏面220g側の複数の電極パッド235を導通接続する配線となっている。図28では模式的にスルーホール配線220hとして示してあるが、このスルーホール配線220hは、実際には、湿度センサ形成エリア及び電極パッド形成エリアのセンサチップ基板220である。   The sensor chip substrate 220 is a low-resistance silicon substrate whose resistivity is lowered by doping impurities such as boron and phosphorus, and the front and back surfaces 220f and 220g are electrically connected. Insulators 221a and 221b (FIGS. 30 and 33) are embedded in the front and back surfaces 220f and 220g of the sensor chip substrate 220, and a humidity sensor formation area and an electrode pad formation area defined by the insulators 221a and 221b. , The substrate itself is a wiring that electrically connects the lower electrode film 24 and the upper electrode film 26 of the humidity sensor 21 on the front surface 220f side and the plurality of electrode pads 235 on the back surface 220g side. In FIG. 28, the through-hole wiring 220h is schematically shown as the through-hole wiring 220h, but the through-hole wiring 220h is actually the sensor chip substrate 220 in the humidity sensor forming area and the electrode pad forming area.

支持基板10は、センサチップ基板220の接着固定面である表面10aに、センサチップ基板220の複数の電極パッド235に対応する電極配線10eを設けた以外の構成は、第1実施形態の支持基板10と同一である。   The support substrate 10 has the same configuration as that of the first embodiment except that the electrode wiring 10e corresponding to the plurality of electrode pads 235 of the sensor chip substrate 220 is provided on the surface 10a that is an adhesive fixing surface of the sensor chip substrate 220. 10 is the same.

支持基板10の電極配線10eは、例えばAuからなる導電性ワイヤー51で、IC基板50の複数の電極パッド55に接続されている。導電性ワイヤー51は、その表面高さがセンサチップ基板220の表面220f(湿度センサ形成面)よりも低く、封止樹脂60内に埋め込まれている。   The electrode wiring 10e of the support substrate 10 is connected to a plurality of electrode pads 55 of the IC substrate 50 by conductive wires 51 made of, for example, Au. The conductive wire 51 has a surface height lower than the surface 220 f (humidity sensor forming surface) of the sensor chip substrate 220 and is embedded in the sealing resin 60.

この実施形態のようにセンサチップ基板220の表面220fに設けた湿度センサ21と導通接続する複数の電極パッド235を裏面220gに配置し、支持基板210の電極配線210eを介してIC基板50の複数の電極パッド55と電気的に接続すれば、基板表面に設けた電極パッドとIC基板をワイヤーボンディングにより接続する場合よりもパッケージ高さ方向のスペースを省略でき、低背化を図れる。   As in this embodiment, a plurality of electrode pads 235 that are conductively connected to the humidity sensor 21 provided on the front surface 220f of the sensor chip substrate 220 are arranged on the back surface 220g, and a plurality of IC substrates 50 are connected via the electrode wiring 210e of the support substrate 210. If the electrode pad 55 is electrically connected, the space in the package height direction can be omitted and the height can be reduced as compared with the case where the electrode pad provided on the substrate surface and the IC substrate are connected by wire bonding.

湿度センサパッケージ2は、次のように製造する。
先ず、単一の支持基板10の表面10aに、多数のセンサチップ基板220と多数のIC基板50を一対ずつ接着固定する。このとき、センサチップ基板220は、図28に示すように、その裏面220gに設けた複数の電極パッド235が支持基板10の表面10aの電極配線10eの一端部に対向するように位置決めして支持基板10と半田接合または導電性接着剤により接着し、複数の電極パッド235と電極配線10eを電気的に接続させる。一方、IC基板50は、支持基板10の表面10aの電極配線10eの他端部に隣接するように位置決めして、接着固定する。
The humidity sensor package 2 is manufactured as follows.
First, a large number of sensor chip substrates 220 and a large number of IC substrates 50 are bonded and fixed to the surface 10a of a single support substrate 10 one by one. At this time, as shown in FIG. 28, the sensor chip substrate 220 is positioned and supported such that the plurality of electrode pads 235 provided on the back surface 220g thereof face one end of the electrode wiring 10e on the front surface 10a of the support substrate 10. A plurality of electrode pads 235 and the electrode wiring 10e are electrically connected to the substrate 10 by solder bonding or a conductive adhesive. On the other hand, the IC substrate 50 is positioned and bonded and fixed so as to be adjacent to the other end of the electrode wiring 10e on the surface 10a of the support substrate 10.

次に、支持基板10の電極配線10eの他端部とIC基板50の複数の電極パッド55を導電性ワイヤー51によって電気的に接続し、さらに、IC基板50の外部接続用の電極パッド56と支持基板10のコンタクト導体10cを導電性ワイヤー52によって電気的に接続する。ここで、IC基板50はセンサチップ基板220よりも薄板からなり、IC基板50の電極パッド形成面(表面50a)とセンサチップ基板220の湿度センサ形成面(表面220f)の間には50〜200μm程度の表面高さの差があるから、導電性ワイヤー51、52の高さは湿度センサ形成面よりも低くなる。   Next, the other end of the electrode wiring 10e of the support substrate 10 and the plurality of electrode pads 55 of the IC substrate 50 are electrically connected by the conductive wire 51, and further, the electrode pads 56 for external connection of the IC substrate 50 The contact conductor 10 c of the support substrate 10 is electrically connected by the conductive wire 52. Here, the IC substrate 50 is made thinner than the sensor chip substrate 220, and the gap between the electrode pad forming surface (surface 50 a) of the IC substrate 50 and the humidity sensor forming surface (surface 220 f) of the sensor chip substrate 220 is 50 to 200 μm. Since there is a difference in surface height, the height of the conductive wires 51 and 52 is lower than the humidity sensor forming surface.

続いて、図7に示す第1実施形態の封止工程と同様に、センサチップ基板220の湿度センサ形成面(表面220f)に金型を押し当てた状態で、該金型とセンサチップ基板220、IC基板50及び支持基板10との間に生じるキャビティ内に封止樹脂60を充填し、封止樹脂60が硬化したら金型を外す。この工程により、封止樹脂60の表面とセンサチップ基板220の湿度センサ形成面は同一の高さ位置となる。また、多数のセンサチップ基板220及びIC基板50は単一の支持基板10上で一括封止でき、封止工程が容易となる。センサチップ基板220とIC基板50は、湿度センサ形成面上に位置する湿度センサ21と上下電極配線34、36の一端部を除いて封止樹脂60内に完全に埋め込まれるので、ワイヤーボンディング部を含む電気配線部及びIC基板50は腐食や衝撃に強く、信頼性が向上する。封止樹脂60には、例えばエポキシ樹脂またはフィラーを混入したエポキシ樹脂を用いる。   Subsequently, in the same manner as the sealing process of the first embodiment shown in FIG. 7, the mold and the sensor chip substrate 220 are pressed with the mold pressed against the humidity sensor forming surface (surface 220 f) of the sensor chip substrate 220. The cavity formed between the IC substrate 50 and the support substrate 10 is filled with the sealing resin 60, and the mold is removed when the sealing resin 60 is cured. By this step, the surface of the sealing resin 60 and the humidity sensor forming surface of the sensor chip substrate 220 are at the same height position. In addition, a large number of sensor chip substrates 220 and IC substrates 50 can be collectively sealed on a single support substrate 10, and the sealing process is facilitated. The sensor chip substrate 220 and the IC substrate 50 are completely embedded in the sealing resin 60 except for one end of the humidity sensor 21 and the upper and lower electrode wirings 34 and 36 located on the humidity sensor forming surface. The included electrical wiring portion and the IC substrate 50 are resistant to corrosion and impact, and the reliability is improved. For the sealing resin 60, for example, an epoxy resin or an epoxy resin mixed with a filler is used.

そして、1枚のセンサチップ基板220と1枚のIC基板50からなるパッケージ単位で支持基板10を切断する。分割した各パッケージには、支持基板10の裏面10bに、スルーホール導体10dを介してコンタクト導体10cと導通接続するSMD端子11を形成する。このSMD端子11を介して、IC基板50は外部回路と接続可能になる。   Then, the support substrate 10 is cut by a package unit including one sensor chip substrate 220 and one IC substrate 50. In each divided package, an SMD terminal 11 is formed on the back surface 10b of the support substrate 10 so as to be conductively connected to the contact conductor 10c through the through-hole conductor 10d. The IC substrate 50 can be connected to an external circuit via the SMD terminal 11.

以上により、図27及び図28に示される湿度センサパッケージ2が多数得られる。   As described above, many humidity sensor packages 2 shown in FIGS. 27 and 28 are obtained.

次に、図29〜図40を参照し、センサチップ基板220の製造工程について詳細に説明する。図29、図31〜図33、図35、図37、図39及び図40は、図38のB−B線に沿う断面でセンサチップ基板220の製造工程を示す断面図であり、図30、図34、図36及び図38は、センサチップ基板220の製造工程を表面220f側から見て示す平面図である。図38のB−B線は、図3のB−B線に対応している。   Next, a manufacturing process of the sensor chip substrate 220 will be described in detail with reference to FIGS. 29, FIG. 31 to FIG. 33, FIG. 35, FIG. 37, FIG. 39 and FIG. 40 are cross-sectional views showing the manufacturing process of the sensor chip substrate 220 along the line BB in FIG. 34, 36 and 38 are plan views showing the manufacturing process of the sensor chip substrate 220 as viewed from the front surface 220f side. The BB line in FIG. 38 corresponds to the BB line in FIG.

本実施形態では、例えばホウ素やリン等の不純物ドーピングにより抵抗率を所定値以下にした低抵抗シリコン基板を、センサチップ基板220として用いる。このセンサチップ基板220の表裏面は電気的に導通している。   In the present embodiment, for example, a low resistance silicon substrate having a resistivity of a predetermined value or less by doping impurities such as boron and phosphorus is used as the sensor chip substrate 220. The front and back surfaces of the sensor chip substrate 220 are electrically connected.

先ず、図29に示すように、ドライエッチングによりセンサチップ基板220の表面を所定深さ削り、削った部分にガラスからなる絶縁体221aを埋め込み形成する。そして、センサチップ基板220のシリコン層と埋め込んだ絶縁体221aとが同一高さになるまで表面研磨し、巨視的な凹凸のない平坦な表面220fを形成する。表面220fの絶縁体221aが埋め込まれていない領域は、後工程で湿度センサを形成するための湿度センサ形成エリアとなる。本実施形態の湿度センサ形成エリアは、図30に示されるように、下部電極膜、高分子感湿膜及び上部電極膜による平行平板構造を形成するセンサエリアα1と、感湿部及び固定部の上部電極膜の端部をそれぞれ位置させる上部電極エリアα2、α3とに電気的に独立している。   First, as shown in FIG. 29, the surface of the sensor chip substrate 220 is shaved to a predetermined depth by dry etching, and an insulator 221a made of glass is embedded in the shaved portion. Then, surface polishing is performed until the silicon layer of the sensor chip substrate 220 and the embedded insulator 221a have the same height, thereby forming a flat surface 220f without macroscopic unevenness. A region of the surface 220f where the insulator 221a is not embedded serves as a humidity sensor formation area for forming a humidity sensor in a later process. As shown in FIG. 30, the humidity sensor formation area of the present embodiment includes a sensor area α1 that forms a parallel plate structure with a lower electrode film, a polymer moisture sensitive film, and an upper electrode film, and a moisture sensitive part and a fixed part. It is electrically independent of the upper electrode areas α2 and α3 that respectively locate the end portions of the upper electrode film.

次に、図31に示すように、センサチップ基板220の絶縁体221aを形成した面とは反対側の面に、反応性イオンエッチング(RIE)により、該絶縁体221aを露出させる開口部221cを形成する。そして、図32に示すように、開口部221cにガラスからなる絶縁体221bを埋め込み形成し、埋め込んだ絶縁体221bとセンサチップ基板220のシリコン層とが同一高さになるまで表面研磨を実行して巨視的な凹凸のない平坦な裏面220gを形成する。裏面220gの絶縁体221bが埋め込まれていない領域は、後工程で支持基板210側の電極パッドを形成するための電極パッド形成エリアとなる。電極パッド形成エリアは、センサチップ基板220の基板厚さ方向で湿度センサ形成エリア(センサエリアα1、上部電極エリアα2、α3)と重複しており、湿度センサ形成エリアとの電気的導通が得られている。   Next, as shown in FIG. 31, an opening 221c for exposing the insulator 221a is formed on the surface of the sensor chip substrate 220 opposite to the surface on which the insulator 221a is formed by reactive ion etching (RIE). Form. Then, as shown in FIG. 32, an insulator 221b made of glass is embedded in the opening 221c, and surface polishing is performed until the embedded insulator 221b and the silicon layer of the sensor chip substrate 220 have the same height. And a flat back surface 220 g having no macroscopic unevenness is formed. The region of the back surface 220g where the insulator 221b is not embedded serves as an electrode pad formation area for forming an electrode pad on the support substrate 210 side in a later step. The electrode pad formation area overlaps with the humidity sensor formation area (sensor area α1, upper electrode area α2, α3) in the substrate thickness direction of the sensor chip substrate 220, and electrical continuity with the humidity sensor formation area is obtained. ing.

続いて、図33及び図34に示すように、センサチップ基板220の表面220f上に、絶縁体221aで画成されたセンサエリアα1に位置させて、下部電極膜24を形成する。下部電極膜24は、形成する感湿部と固定部の中間位置に想定した仮想中心線Xに関してミラー反転させた、例えば平面矩形状で感湿部と固定部にそれぞれ形成する。   Subsequently, as shown in FIGS. 33 and 34, the lower electrode film 24 is formed on the surface 220f of the sensor chip substrate 220 so as to be positioned in the sensor area α1 defined by the insulator 221a. The lower electrode film 24 is formed on each of the moisture sensitive portion and the fixed portion, for example, in a planar rectangular shape that is mirror-reversed with respect to the virtual center line X assumed at the intermediate position between the moisture sensitive portion and the fixed portion to be formed.

続いて、図35及び図36に示すように、下部電極膜24の上に、仮想中心線Xに関してミラー反転させた例えば下部電極膜24より若干大きな平面矩形状で、例えばポリイミドからなる高分子感湿膜25を形成する。   Subsequently, as shown in FIG. 35 and FIG. 36, for example, a polymer rectangle made of polyimide having a planar rectangular shape slightly larger than, for example, the lower electrode film 24 mirror-inverted with respect to the virtual center line X on the lower electrode film 24. A wet film 25 is formed.

続いて、図37及び図38に示すように、高分子感湿膜25及び表面220f上に、絶縁体221aで画成されたセンサエリアα1から上部電極エリアα2、α3にかけて、仮想中心線Xに関してミラー反転させたパターン形状からなる上部電極膜26を形成する。ここで、上部電極膜26の高分子感湿膜25上に位置する部分は、下部電極膜24とほぼ同等の平面矩形状で形成し、かつ、感湿部側には高分子感湿膜25を露出させる多数の開口部27を設け、固定部側には開口部を有さないベタ膜状のままで設ける。この上部電極膜26には、例えばAl、Ta、Ti、NiFe、Ni等の電極材料を用いる。   Subsequently, as shown in FIGS. 37 and 38, the virtual center line X is formed on the polymer moisture sensitive film 25 and the surface 220f from the sensor area α1 defined by the insulator 221a to the upper electrode areas α2 and α3. An upper electrode film 26 having a pattern shape mirror-inverted is formed. Here, the portion of the upper electrode film 26 located on the polymer moisture sensitive film 25 is formed in a planar rectangular shape substantially equivalent to the lower electrode film 24, and the polymer moisture sensitive film 25 is formed on the moisture sensitive part side. A large number of openings 27 for exposing the film are provided, and the fixed part is provided with a solid film shape having no openings. For the upper electrode film 26, for example, an electrode material such as Al, Ta, Ti, NiFe, or Ni is used.

続いて、図39に示すように、上部電極膜26を覆う非透湿保護膜28を形成する。非透湿保護膜28には、例えば窒化シリコン膜(SiNx膜)やSiO2膜、Al23/SiO2積層膜、SiO2/SiN積層膜等を用いる。 Subsequently, as shown in FIG. 39, a non-moisture permeable protective film 28 covering the upper electrode film 26 is formed. As the non-moisture permeable protective film 28, for example, a silicon nitride film (SiNx film), a SiO 2 film, an Al 2 O 3 / SiO 2 laminated film, a SiO 2 / SiN laminated film, or the like is used.

続いて、図40に示すように、センサチップ基板220の裏面220gに、絶縁体221bで画成された電極パッド形成エリアに位置させて、支持基板210の電極配線210eと接続可能な複数の電極パッド235を形成する。上述したように湿度センサ形成エリアと電極パッド形成エリアは電気的に導通しているので、複数の電極パッド235は、下部電極膜24及び上部電極膜26と導通接続する。   Subsequently, as shown in FIG. 40, a plurality of electrodes that can be connected to the electrode wiring 210e of the support substrate 210 by being positioned on the electrode pad formation area defined by the insulator 221b on the back surface 220g of the sensor chip substrate 220. A pad 235 is formed. As described above, since the humidity sensor formation area and the electrode pad formation area are electrically connected, the plurality of electrode pads 235 are electrically connected to the lower electrode film 24 and the upper electrode film 26.

そして、同図40の破線で示すように、センサチップ基板220を、湿度センサ21の両側の絶縁体221a、221bが埋め込まれている位置で切断すれば、センサチップ基板220が完成する。   40, the sensor chip substrate 220 is completed by cutting the sensor chip substrate 220 at positions where the insulators 221a and 221b on both sides of the humidity sensor 21 are embedded.

次に、図41〜図47を参照し、上述の製造工程(図29〜図40)とは別態様による、センサチップ基板220の製造工程について詳細に説明する。図41〜図46はセンサチップ基板220の製造工程を示す断面図であり、図47は、図46に示す工程を基板裏面側から見て示す平面図である。   Next, a manufacturing process of the sensor chip substrate 220 according to an aspect different from the above-described manufacturing process (FIGS. 29 to 40) will be described in detail with reference to FIGS. 41 to 47. FIGS. 41 to 46 are cross-sectional views showing the manufacturing process of the sensor chip substrate 220, and FIG. 47 is a plan view showing the process shown in FIG. 46 from the back side of the substrate.

この態様においても、例えばホウ素やリン等の不純物ドーピングにより抵抗率を所定値以下にした低抵抗シリコン基板を、センサチップ基板220として用いる。このセンサチップ基板220の表裏面は電気的に導通している。   Also in this embodiment, a low resistance silicon substrate having a resistivity of a predetermined value or less by doping impurities such as boron and phosphorus is used as the sensor chip substrate 220. The front and back surfaces of the sensor chip substrate 220 are electrically connected.

先ず、図41に示すように、所定の配線接続エリアを残して、センサチップ基板220の表面をドライエッチングにより所定深さ削る。削った部分には、ガラスからなる絶縁体221を埋め込み形成し、センサチップ基板220のシリコン層と埋め込んだ絶縁体221とが同一高さになるまで表面研磨して、巨視的な凹凸のない平坦な表面220fを形成する。この工程により、表面220fの絶縁体221が埋め込まれていないエリア、すなわち、表裏面の電気的導通が確保されているエリアが配線接続エリアとなる。   First, as shown in FIG. 41, the surface of the sensor chip substrate 220 is cut to a predetermined depth by dry etching, leaving a predetermined wiring connection area. An insulator 221 made of glass is embedded in the shaved portion, and the surface is polished until the silicon layer of the sensor chip substrate 220 and the embedded insulator 221 have the same height, and a flat surface without macroscopic unevenness. A smooth surface 220f is formed. By this step, an area where the insulator 221 on the front surface 220f is not embedded, that is, an area where electrical conduction between the front and back surfaces is ensured becomes a wiring connection area.

次に、同図41に示すように、センサチップ基板220の裏面220gに、基板厚さ方向で表面220fの配線接続エリアと重複させて、該センサチップ基板220を所定深さ削った凹部220iを複数形成し、各凹部220i内に電極パッド235を形成する。複数の電極パッド235は、表面220fの配線接続エリアとの電気的導通が得られている。   Next, as shown in FIG. 41, a recess 220i is formed on the back surface 220g of the sensor chip substrate 220 by overlapping the wiring connection area of the front surface 220f in the thickness direction of the sensor chip by cutting the sensor chip substrate 220 to a predetermined depth. A plurality of electrode pads 235 are formed in each recess 220i. The plurality of electrode pads 235 are electrically connected to the wiring connection area of the surface 220f.

絶縁体221の埋設工程と電極パッド形成工程は、順不同である。   The step of embedding the insulator 221 and the step of forming the electrode pad are in no particular order.

続いて、図42に示すように、センサチップ基板220の表面220f(湿度センサ形成面)上に、配線接続エリアに少なくとも一部を位置させて、下部電極膜24を形成する。下部電極膜24は、配線接続エリアで裏面220gの電極パッド235と電気的に接続される。この下部電極膜24は、形成する感湿部と固定部の中間位置に想定した仮想中心線Xに関してミラー反転させた、例えば平面矩形状で感湿部と固定部にそれぞれ形成する。   Subsequently, as shown in FIG. 42, the lower electrode film 24 is formed on the surface 220f (humidity sensor forming surface) of the sensor chip substrate 220 so as to be at least partially located in the wiring connection area. The lower electrode film 24 is electrically connected to the electrode pad 235 on the back surface 220g in the wiring connection area. The lower electrode film 24 is formed on each of the moisture-sensitive portion and the fixed portion, for example, in a planar rectangular shape that is mirror-reversed with respect to the virtual center line X assumed at an intermediate position between the moisture-sensitive portion to be formed and the fixed portion.

続いて、図43に示すように、下部電極膜24の上に、仮想中心線Xに関してミラー反転させた例えば下部電極膜24より若干大きな平面矩形状で、例えばポリイミドからなる高分子感湿膜25を形成する。   Subsequently, as shown in FIG. 43, the polymer moisture-sensitive film 25 made of polyimide, for example, has a planar rectangular shape slightly larger than, for example, the lower electrode film 24 that is mirror-inverted with respect to the virtual center line X on the lower electrode film 24. Form.

続いて、図44に示すように、高分子感湿膜25及び表面220f上に、仮想中心線Xに関してミラー反転させたパターン形状からなる上部電極膜26を形成する。ここで、上部電極膜26の高分子感湿膜25上に位置する部分は、下部電極膜24とほぼ同等の平面矩形状で形成し、かつ、感湿部側には高分子感湿膜25を露出させる多数の開口部27を設け、固定部側には開口部を有さないベタ膜状のままで設ける。この上部電極膜26は、高分子感湿膜25上から表面220fの絶縁体221上を通って配線接続エリア上まで延長し、該配線接続エリアで裏面220gの電極パッド235と電気的に接続される。上部電極膜26には、例えばAl、Ta、Ti、NiFe、Ni等の電極材料を用いる。   Subsequently, as shown in FIG. 44, the upper electrode film 26 having a pattern shape obtained by mirror inversion with respect to the virtual center line X is formed on the polymer moisture sensitive film 25 and the surface 220f. Here, the portion of the upper electrode film 26 located on the polymer moisture sensitive film 25 is formed in a planar rectangular shape substantially equivalent to the lower electrode film 24, and the polymer moisture sensitive film 25 is formed on the moisture sensitive part side. A large number of openings 27 for exposing the film are provided, and the fixed part is provided with a solid film shape having no openings. The upper electrode film 26 extends from the polymer moisture sensitive film 25 to the wiring connection area through the insulator 221 on the front surface 220f, and is electrically connected to the electrode pad 235 on the back surface 220g in the wiring connection area. The For the upper electrode film 26, for example, an electrode material such as Al, Ta, Ti, NiFe, or Ni is used.

続いて、図45に示すように、上部電極膜26を覆う非透湿保護膜28を形成する。非透湿保護膜28には、例えば窒化シリコン膜(SiNx膜)やSiO2膜、Al23/SiO2積層膜、SiO2/SiN積層膜等を用いる。 Subsequently, as shown in FIG. 45, a moisture-impermeable protective film 28 covering the upper electrode film 26 is formed. As the non-moisture permeable protective film 28, for example, a silicon nitride film (SiNx film), a SiO 2 film, an Al 2 O 3 / SiO 2 laminated film, a SiO 2 / SiN laminated film, or the like is used.

続いて、図46及び図47に示すように、裏面220gに、複数の電極パッド235を電気的に独立させる開口部222を形成する。この開口部222は、ドライエッチングにより、表面220fに埋設した絶縁体221を露出させる深さで形成する。   Subsequently, as shown in FIGS. 46 and 47, openings 222 for electrically independent of the plurality of electrode pads 235 are formed in the back surface 220g. The opening 222 is formed by dry etching to a depth that exposes the insulator 221 embedded in the surface 220f.

そして、図46及び図47の破線で示すようにセンサチップ基板220を切断すれば、センサチップ基板220は完成する。   Then, if the sensor chip substrate 220 is cut as shown by the broken lines in FIGS. 46 and 47, the sensor chip substrate 220 is completed.

上記図41〜図47の製造工程によれば、センサチップ基板220の複数の電極パッド235が裏面220gに形成した凹部220i内に配置されるので、電極パッド235の厚み分だけパッケージ高さ方向のスペースを省略でき、低背化に貢献できる。   According to the manufacturing process shown in FIGS. 41 to 47, the plurality of electrode pads 235 of the sensor chip substrate 220 are arranged in the recesses 220i formed on the back surface 220g. Space can be omitted and it can contribute to low profile.

以上の第2実施形態では、センサチップ基板220に低抵抗のシリコン基板を用い、基板自体を配線として表面220f側の湿度センサ21と裏面220g側の複数の電極パッド235を導通接続しているので、センサチップ基板220にスルーホール配線を設けずに済み、構成及び製造工程が簡便である。勿論、センサチップ基板220にスルーホール導体を設けて表面側の湿度センサと裏面側の電極パッドを導通接続する態様としてもよい。   In the second embodiment described above, a low-resistance silicon substrate is used as the sensor chip substrate 220, and the humidity sensor 21 on the front surface 220f side and the plurality of electrode pads 235 on the back surface 220g side are conductively connected using the substrate itself as a wiring. The sensor chip substrate 220 does not need to be provided with through-hole wiring, and the configuration and manufacturing process are simple. Of course, a through-hole conductor may be provided on the sensor chip substrate 220 so that the humidity sensor on the front surface side and the electrode pad on the rear surface side are electrically connected.

以上の第1、第2実施形態は、センサチップ基板20の複数の電極パッド35を湿度センサ形成面と平行な低平面部20eまたは基板裏面20gに設けているが、以下では、湿度センサ形成面と直交する側面に、センサチップ基板20の複数の電極パッド35を設けた第3、第4実施形態について説明する。   In the first and second embodiments described above, the plurality of electrode pads 35 of the sensor chip substrate 20 are provided on the low flat surface portion 20e or the substrate back surface 20g parallel to the humidity sensor formation surface. 3rd and 4th embodiment which provided the some electrode pad 35 of the sensor chip board | substrate 20 in the side surface orthogonal to is described.

図48〜図50は、本発明の第3実施形態を示している。図48は第3実施形態による湿度センサパッケージ3の封止前の状態を示す外観斜視図、図49は封止前の湿度センサパッケージ3を上から見て示す平面図、図50は封止前の湿度センサパッケージ3を側面から見て示す側面図である。封止樹脂60により封止した状態の湿度センサパッケージ3は、図1に示される第1実施形態の湿度センサパッケージ1と同様になる。   48 to 50 show a third embodiment of the present invention. 48 is an external perspective view showing the humidity sensor package 3 according to the third embodiment before sealing, FIG. 49 is a plan view showing the humidity sensor package 3 before sealing, and FIG. 50 is before sealing. It is a side view which shows the humidity sensor package 3 seen from the side. The humidity sensor package 3 sealed with the sealing resin 60 is the same as the humidity sensor package 1 of the first embodiment shown in FIG.

第3実施形態による湿度センサパッケージ3は、センサチップ基板320の複数の電極パッド335を側面320bに設け、この複数の電極パッド335と支持基板310の表面310aに設けた電極配線310eを互いに直交する位置関係でAuボール30により接続した実施形態である。   In the humidity sensor package 3 according to the third embodiment, a plurality of electrode pads 335 of the sensor chip substrate 320 are provided on the side surface 320b, and the electrode wirings 310e provided on the surface 310a of the support substrate 310 are orthogonal to each other. In this embodiment, the Au balls 30 are connected in a positional relationship.

センサチップ基板320は、その表面に絶縁膜を形成したシリコン基板からなる。このセンサチップ基板320には、巨視的な凹凸のない平坦な表面(湿度センサ形成面)320a上に湿度センサ21が形成され、この湿度センサ21の下部電極膜24及び上部電極膜26に一端部が接続した下部電極配線34及び上部電極配線36が側面320bまで延長形成され、下部電極配線34及び上部電極配線36の他端部に電極パッド335がそれぞれ設けられている。センサチップ基板320の側面320bは、センサチップ基板320の表面320a及び支持基板310の表面310aに対して直交する面である。湿度センサ21の構成要素は、第1実施形態の湿度センサ21と同様である。   The sensor chip substrate 320 is made of a silicon substrate having an insulating film formed on the surface thereof. In the sensor chip substrate 320, the humidity sensor 21 is formed on a flat surface (humidity sensor forming surface) 320a having no macroscopic unevenness, and one end portion is formed on the lower electrode film 24 and the upper electrode film 26 of the humidity sensor 21. The lower electrode wiring 34 and the upper electrode wiring 36 connected to each other are extended to the side surface 320b, and electrode pads 335 are provided at the other ends of the lower electrode wiring 34 and the upper electrode wiring 36, respectively. The side surface 320b of the sensor chip substrate 320 is a surface orthogonal to the surface 320a of the sensor chip substrate 320 and the surface 310a of the support substrate 310. The components of the humidity sensor 21 are the same as those of the humidity sensor 21 of the first embodiment.

支持基板310は、センサチップ基板320の接着固定面である表面310aに、センサチップ基板320の複数の電極パッド235に対応する電極配線310eを設けた以外の構成は、第1実施形態の支持基板10と同一である。   The support substrate 310 has the same configuration as that of the first embodiment except that the electrode wiring 310e corresponding to the plurality of electrode pads 235 of the sensor chip substrate 320 is provided on the surface 310a which is an adhesive fixing surface of the sensor chip substrate 320. 10 is the same.

IC基板50は、センサチップ基板20より薄板で、複数の電極パッド55、56を形成した電極パッド形成面(表面)50aがセンサチップ基板320の湿度センサ形成面(表面320a)よりも低くなっている。IC基板50の複数の電極パッド55は、例えばAuからなる導電性ワイヤー53で、支持基板310の電極配線310eに接続されている。導電性ワイヤー53は、その表面高さがセンサチップ基板320の表面320a(湿度センサ形成面)よりも低く、封止樹脂60内に埋め込まれている。   The IC substrate 50 is thinner than the sensor chip substrate 20, and the electrode pad forming surface (front surface) 50 a on which the plurality of electrode pads 55 and 56 are formed is lower than the humidity sensor forming surface (front surface 320 a) of the sensor chip substrate 320. Yes. The plurality of electrode pads 55 of the IC substrate 50 are connected to the electrode wiring 310e of the support substrate 310 by a conductive wire 53 made of, for example, Au. The conductive wire 53 has a surface height lower than the surface 320 a (humidity sensor forming surface) of the sensor chip substrate 320 and is embedded in the sealing resin 60.

この実施形態のようにセンサチップ基板320の側面320bに複数の電極パッド335を設ければ、導電性ワイヤーを用いずに該複数の電極パッド335と支持基板310の電極配線310eを直に接続でき、支持基板310の電極配線310eを介してIC基板50の複数の電極パッド55と電気的に接続されるので、基板表面に設けた電極パッドとIC基板をワイヤーボンディングにより接続する場合よりもパッケージ高さ方向のスペースを省略でき、低背化を図れる。   If a plurality of electrode pads 335 are provided on the side surface 320b of the sensor chip substrate 320 as in this embodiment, the plurality of electrode pads 335 and the electrode wiring 310e of the support substrate 310 can be directly connected without using a conductive wire. Since it is electrically connected to the plurality of electrode pads 55 of the IC substrate 50 via the electrode wiring 310e of the support substrate 310, the package height is higher than the case where the electrode pads provided on the substrate surface and the IC substrate are connected by wire bonding. Space in the vertical direction can be omitted, and the height can be reduced.

湿度センサパッケージ3は、次のように製造する。先ず、単一の支持基板310の表面310a上に、該支持基板310の電極配線310eの一端部側にそれぞれ位置させて、多数のセンサチップ基板320を接着固定する。このとき、各センサチップ基板320は、その側面320bに設けた複数の電極パッド335と支持基板310の電極配線310eの一端部が互いに直交する位置関係(90°で対向する関係)となるように、配置する。次に、例えばAuボール30により、互いに直交する位置関係で対向させたセンサチップ基板320の複数の電極パッド335と支持基板310の電極配線310eの一端部を接続する。   The humidity sensor package 3 is manufactured as follows. First, a large number of sensor chip substrates 320 are bonded and fixed on the surface 310a of a single support substrate 310 so as to be positioned on one end side of the electrode wiring 310e of the support substrate 310, respectively. At this time, in each sensor chip substrate 320, a plurality of electrode pads 335 provided on the side surface 320b and one end portion of the electrode wiring 310e of the support substrate 310 are in a positional relationship (a relationship of facing each other at 90 °). ,Deploy. Next, the plurality of electrode pads 335 of the sensor chip substrate 320 opposed to each other in a positional relationship orthogonal to each other, for example, by the Au balls 30 are connected to one end of the electrode wiring 310 e of the support substrate 310.

続いて、同じ支持基板310上に、該支持基板310の電極配線310eの他端部側にそれぞれ位置させて、多数のIC基板50を接着固定する。そして、導電性ワイヤー53により電極配線310eの他端部と各IC基板50の複数の電極パッド55を接続し、さらに、導電性ワイヤー52によりコンタクト導体10cと各IC基板50の複数の電極パッド56を接続する。IC基板50の電極パッド形成面50aはセンサチップ基板320の湿度センサ形成面320aよりも低く、その表面高さの差は50〜200μm程度あるので、導電性ワイヤー52、53は湿度センサ形成面よりも低くなる。   Subsequently, a large number of IC substrates 50 are bonded and fixed on the same support substrate 310 on the other end side of the electrode wiring 310e of the support substrate 310, respectively. The other end of the electrode wiring 310 e is connected to the plurality of electrode pads 55 of each IC substrate 50 by the conductive wire 53, and the contact conductor 10 c and the plurality of electrode pads 56 of each IC substrate 50 are further connected by the conductive wire 52. Connect. Since the electrode pad forming surface 50a of the IC substrate 50 is lower than the humidity sensor forming surface 320a of the sensor chip substrate 320 and the surface height difference is about 50 to 200 μm, the conductive wires 52 and 53 are more than the humidity sensor forming surface. Also lower.

センサチップ基板320の接着固定及び電気接続工程と、IC基板50の接着固定及び電気接続工程は、逆の順番で行ってもよい。   The adhesion fixing and electrical connection process of the sensor chip substrate 320 and the adhesion fixing and electrical connection process of the IC substrate 50 may be performed in the reverse order.

センサチップ基板320、支持基板310及びIC基板50の電気接続が終わったら、支持基板310上でセンサチップ基板320及びIC基板50を封止する。封止工程は、上述の第1実施形態と同様に、センサチップ基板320の湿度センサ形成面に金型を押し当て、該金型とセンサチップ基板320、IC基板50及び支持基板310の間に生じるキャビティに封止樹脂60を充填し、この封止樹脂60が硬化したら金型を外す。金型をセンサチップ基板320の湿度センサ形成面に押し当てることで、封止樹脂60の表面は湿度センサ形成面と同一高さとなり、パッケージ表面には湿度センサ21のみが露出する。そして、湿度センサ21を除くセンサチップ基板320、IC基板50及びこれらの電気配線部は封止樹脂60によって埋め込まれるので、腐食や衝撃に強く、信頼性が向上する。この工程により、多数のセンサチップ基板320及びIC基板50は単一の支持基板310上で一括封止でき、封止工程が容易となる。封止樹脂60には、例えばエポキシ樹脂を用いる。   When the electrical connection of the sensor chip substrate 320, the support substrate 310, and the IC substrate 50 is completed, the sensor chip substrate 320 and the IC substrate 50 are sealed on the support substrate 310. As in the first embodiment described above, the sealing process is performed by pressing a mold against the humidity sensor forming surface of the sensor chip substrate 320, and between the mold and the sensor chip substrate 320, the IC substrate 50, and the support substrate 310. The resulting cavity is filled with the sealing resin 60, and the mold is removed when the sealing resin 60 is cured. By pressing the mold against the humidity sensor forming surface of the sensor chip substrate 320, the surface of the sealing resin 60 becomes the same height as the humidity sensor forming surface, and only the humidity sensor 21 is exposed on the package surface. Since the sensor chip substrate 320 excluding the humidity sensor 21, the IC substrate 50, and these electrical wiring portions are embedded with the sealing resin 60, they are resistant to corrosion and impact, and the reliability is improved. By this process, a large number of sensor chip substrates 320 and IC substrates 50 can be collectively sealed on a single support substrate 310, and the sealing process becomes easy. For the sealing resin 60, for example, an epoxy resin is used.

封止後は、1枚のセンサチップ基板320と1枚のIC基板50からなるパッケージ単位で支持基板310を切断する。分割した各パッケージには、支持基板310の裏面に、スルーホール導体を介してコンタクト導体310cと導通接続するSMD端子11を形成する。このSMD端子11を介して、IC基板50は外部回路と接続可能になる。   After sealing, the support substrate 310 is cut in a package unit including one sensor chip substrate 320 and one IC substrate 50. In each of the divided packages, the SMD terminal 11 that is electrically connected to the contact conductor 310c through the through-hole conductor is formed on the back surface of the support substrate 310. The IC substrate 50 can be connected to an external circuit via the SMD terminal 11.

以上により、湿度センサパッケージ3が得られる。   Thus, the humidity sensor package 3 is obtained.

図51〜図53は、本発明の第4実施形態を示している。図51は封止前の湿度センサパッケージ4を示す外観斜視図、図52は封止前の湿度センサパッケージ4を上から見て示す平面図、図53は封止前の湿度センサパッケージ4を側面から見て示す側面図である。   51 to 53 show a fourth embodiment of the present invention. 51 is an external perspective view showing the humidity sensor package 4 before sealing, FIG. 52 is a plan view showing the humidity sensor package 4 before sealing, and FIG. 53 is a side view of the humidity sensor package 4 before sealing. FIG.

湿度センサパッケージ4は、上述のセンサチップ基板320の側面320bに設けた複数の電極パッド335を、IC基板50の複数の電極パッド55と互いに直交する位置関係で接続した実施形態である。支持基板と及びIC基板は、第1実施形態の支持基板10及びIC基板50と同一である。このようにセンサチップ基板320の複数の電極パッド335とIC基板50の複数の電極パッド55を直に接続すれば、導電性ワイヤーを用いずに済み、ワイヤーボンディングで接続する場合に比べてパッケージ高さ方向のスペースを省略でき、低背化を図れる。また支持基板上に電極配線を設ける必要がないので構成容易となり、センサチップ基板320とIC基板50を密接配置することから支持基板も小型化できる。   The humidity sensor package 4 is an embodiment in which the plurality of electrode pads 335 provided on the side surface 320b of the sensor chip substrate 320 are connected to the plurality of electrode pads 55 of the IC substrate 50 in a positional relationship orthogonal to each other. The support substrate and the IC substrate are the same as the support substrate 10 and the IC substrate 50 of the first embodiment. In this way, if the plurality of electrode pads 335 of the sensor chip substrate 320 and the plurality of electrode pads 55 of the IC substrate 50 are directly connected, it is not necessary to use a conductive wire, and the package height is higher than the case of connecting by wire bonding. Space in the vertical direction can be omitted, and the height can be reduced. In addition, since it is not necessary to provide electrode wiring on the support substrate, the configuration is facilitated, and the support substrate can be reduced in size because the sensor chip substrate 320 and the IC substrate 50 are closely arranged.

湿度センサパッケージ4は、次のように製造する。先ず、単一の支持基板10の表面10a上に、センサチップ基板320とIC基板50を一対ずつ配置し、接着固定する。このとき、センサチップ基板320とIC基板50は、該センサチップ基板320の側面320bに設けた複数の電極パッド335とIC基板50の表面50aに設けた複数の電極パッド55が互いに直交する位置関係で対向するように、密接させる。   The humidity sensor package 4 is manufactured as follows. First, a pair of sensor chip substrates 320 and IC substrates 50 are arranged on the surface 10a of a single support substrate 10 and bonded and fixed. At this time, the sensor chip substrate 320 and the IC substrate 50 are in a positional relationship in which the plurality of electrode pads 335 provided on the side surface 320b of the sensor chip substrate 320 and the plurality of electrode pads 55 provided on the surface 50a of the IC substrate 50 are orthogonal to each other. Close so that they face each other.

次に、互いに直交する関係で対向させたセンサチップ基板320の複数の電極パッド335とIC基板50の複数の電極パッド55をAuボール30により直に接続する。続いて、導電性ワイヤー52によりIC基板50の複数の電極パッド56を支持基板10のコンタクト導体10cに接続する。IC基板50の電極パッド形成面はセンサチップ基板320の湿度センサ形成面(表面320a)よりも低く、その表面高さの差は50〜200μm程度あるから、導電性ワイヤー52は湿度センサ形成面よりも低くなる。   Next, the plurality of electrode pads 335 of the sensor chip substrate 320 and the plurality of electrode pads 55 of the IC substrate 50 which are opposed to each other in an orthogonal relationship are directly connected by the Au balls 30. Subsequently, the plurality of electrode pads 56 of the IC substrate 50 are connected to the contact conductors 10 c of the support substrate 10 by the conductive wires 52. Since the electrode pad forming surface of the IC substrate 50 is lower than the humidity sensor forming surface (surface 320a) of the sensor chip substrate 320, and the surface height difference is about 50 to 200 μm, the conductive wire 52 is more than the humidity sensor forming surface. Also lower.

続いて、支持基板10上でセンサチップ基板320及びIC基板50を封止する。封止工程は、上述の第1実施形態と同様に、センサチップ基板320の湿度センサ形成面に金型を押し当て、該金型とセンサチップ基板320、IC基板50及び支持基板10の間に生じるキャビティに封止樹脂60を充填し、この封止樹脂60が硬化したら金型を外す。金型をセンサチップ基板320の湿度センサ形成面に押し当てることで、封止樹脂60の表面は湿度センサ形成面と同一高さとなり、パッケージ表面には湿度センサ21のみが露出する。そして、湿度センサ21を除くセンサチップ基板320、IC基板50及びこれらの電気配線部は封止樹脂60によって埋め込まれるので、腐食や衝撃に強く、信頼性が向上する。この工程により、多数のセンサチップ基板320及びIC基板50は単一の支持基板10上で一括封止でき、封止工程が容易となる。封止樹脂60には、例えばエポキシ樹脂を用いる。   Subsequently, the sensor chip substrate 320 and the IC substrate 50 are sealed on the support substrate 10. As in the first embodiment described above, the sealing process is performed by pressing a mold against the humidity sensor forming surface of the sensor chip substrate 320 and between the mold and the sensor chip substrate 320, the IC substrate 50, and the support substrate 10. The resulting cavity is filled with the sealing resin 60, and the mold is removed when the sealing resin 60 is cured. By pressing the mold against the humidity sensor forming surface of the sensor chip substrate 320, the surface of the sealing resin 60 becomes the same height as the humidity sensor forming surface, and only the humidity sensor 21 is exposed on the package surface. Since the sensor chip substrate 320 excluding the humidity sensor 21, the IC substrate 50, and these electrical wiring portions are embedded with the sealing resin 60, they are resistant to corrosion and impact, and the reliability is improved. By this process, a large number of sensor chip substrates 320 and IC substrates 50 can be collectively sealed on the single support substrate 10, and the sealing process becomes easy. For the sealing resin 60, for example, an epoxy resin is used.

封止後は、1枚のセンサチップ基板320と1枚のIC基板50からなるパッケージ単位で支持基板10を切断する。分割した各パッケージには、支持基板10の裏面10bに、スルーホール導体10dを介してコンタクト導体10cと導通接続するSMD端子11を形成する。このSMD端子11を介して、IC基板50は外部回路と接続可能になる。   After sealing, the support substrate 10 is cut in a package unit including one sensor chip substrate 320 and one IC substrate 50. In each divided package, an SMD terminal 11 is formed on the back surface 10b of the support substrate 10 so as to be conductively connected to the contact conductor 10c through the through-hole conductor 10d. The IC substrate 50 can be connected to an external circuit via the SMD terminal 11.

以上により、湿度センサパッケージ4が得られる。   Thus, the humidity sensor package 4 is obtained.

以上の各実施形態によれば、センサチップ基板20の湿度センサ21が複数の電極パッド35よりも高い位置に形成され、この湿度センサ形成面と同じ高さまで封止樹脂60が設けられているので、パッケージ高さ方向のスペースを省略しつつ湿度センサ21以外(センサチップ基板20、IC基板50及びその電気配線部)を封止樹脂60で確実に封止でき、湿度センサ21のみをパッケージ表面1aに露出させることが容易となる。これにより、パッケージの低背化を実現でき、外部回路に実装容易なSMD対応の湿度センサパッケージを提供できる。   According to each of the above embodiments, the humidity sensor 21 of the sensor chip substrate 20 is formed at a position higher than the plurality of electrode pads 35, and the sealing resin 60 is provided up to the same height as the humidity sensor formation surface. In addition, the space other than the humidity sensor 21 (the sensor chip substrate 20, the IC substrate 50, and the electric wiring portion thereof) can be reliably sealed with the sealing resin 60 while omitting the space in the package height direction, and only the humidity sensor 21 is package surface 1a. It becomes easy to expose to. As a result, the package can be reduced in height and an SMD-compatible humidity sensor package that can be easily mounted on an external circuit can be provided.

各実施形態では、感湿部22と固定部23を有する湿度センサ21を備えた実施形態で本発明を説明したが、湿度に応じて出力が変化する感湿部のみを有する湿度センサを備えた湿度センサパッケージにも本発明は適用可能である。また、容量型湿度センサだけでなく、湿度に応じて電気抵抗が変化する感湿部を有する抵抗型湿度センサにも本発明は適用可能である。   In each of the embodiments, the present invention has been described in the embodiment including the humidity sensor 21 having the humidity sensing unit 22 and the fixing unit 23, but the humidity sensor having only the humidity sensing unit whose output changes according to the humidity is provided. The present invention is also applicable to a humidity sensor package. Further, the present invention can be applied not only to a capacitive humidity sensor but also to a resistance humidity sensor having a humidity sensitive portion whose electric resistance changes according to humidity.

1、2、3、4 湿度センサパッケージ
10 支持基板
10a 表面
10b 裏面
10c コンタクト導体
10d スルーホール導体
20 センサチップ基板
20a Si層
20b 絶縁膜
20c 高平面部(湿度センサ形成面)
20d 傾斜面部
20e 低平面部(電極パッド形成面)
21 湿度センサ
22 感湿部
23 固定部
24 下部電極膜
25 高分子感湿膜
26 上部電極膜
27 開口部
28 非透湿保護膜
30 Auボール
34 下部電極配線
35 電極パッド
36 上部電極配線
37 コンタクトホール
50 IC基板
51、52、53 導電性ワイヤー
55、56 電極パッド
60 封止樹脂
61 金型
62 キャビティ
220 センサチップ基板
220f 表面(湿度センサ形成面)
220g 裏面
220h スルーホール配線
220i 凹部
222 開口部
235 電極パッド
310 支持基板
310a 表面
310c コンタクト導体
310e 電極配線
320 センサチップ基板
320a 表面(湿度センサ形成面)
320b 側面
335 電極パッド
1, 2, 3, 4 Humidity sensor package 10 Support substrate 10a Front surface 10b Back surface 10c Contact conductor 10d Through-hole conductor 20 Sensor chip substrate 20a Si layer 20b Insulating film 20c High flat surface portion (humidity sensor formation surface)
20d Inclined surface portion 20e Low flat surface portion (electrode pad forming surface)
DESCRIPTION OF SYMBOLS 21 Humidity sensor 22 Humidity sensing part 23 Fixed part 24 Lower electrode film 25 Polymer moisture sensitive film 26 Upper electrode film 27 Opening part 28 Non-moisture permeable protective film 30 Au ball 34 Lower electrode wiring 35 Electrode pad 36 Upper electrode wiring 37 Contact hole 50 IC substrate 51, 52, 53 Conductive wire 55, 56 Electrode pad 60 Sealing resin 61 Mold 62 Cavity 220 Sensor chip substrate 220f Surface (humidity sensor forming surface)
220g Back surface 220h Through-hole wiring 220i Recess 222 Opening 235 Electrode pad 310 Support substrate 310a Surface 310c Contact conductor 310e Electrode wiring 320 Sensor chip substrate 320a Surface (humidity sensor formation surface)
320b Side surface 335 Electrode pad

Claims (22)

湿度センサを形成したセンサチップ基板と、前記湿度センサの出力変化を検出するIC基板とを同一の支持基板に接着固定してなる湿度センサパッケージにおいて、
前記湿度センサを露出させた状態で前記センサチップ基板及び前記IC基板を封止樹脂で覆い、かつ、該封止樹脂表面と前記センサチップ基板の湿度センサ形成面とを同一高さ位置にしたことを特徴とする湿度センサパッケージ。
In a humidity sensor package in which a sensor chip substrate on which a humidity sensor is formed and an IC substrate that detects an output change of the humidity sensor are bonded and fixed to the same support substrate,
The sensor chip substrate and the IC substrate are covered with a sealing resin with the humidity sensor exposed, and the surface of the sealing resin and the humidity sensor forming surface of the sensor chip substrate are at the same height position. Humidity sensor package characterized by
請求項1記載の湿度センサパッケージにおいて、前記支持基板には、前記封止樹脂で覆われた面とは反対側の面に、前記IC基板を外部回路と接続するためのSMD端子が備えられている湿度センサパッケージ。 2. The humidity sensor package according to claim 1, wherein the support substrate is provided with an SMD terminal on the surface opposite to the surface covered with the sealing resin for connecting the IC substrate to an external circuit. Humidity sensor package. 請求項1または2に記載の湿度センサパッケージにおいて、前記センサチップ基板の表面に、その表面高さを異ならせた高平面部と低平面部及びこの高低平面部の間をつなぐ傾斜面部を設け、前記高平面部に前記湿度センサを形成し、前記低平面部に複数の電極パッドを形成し、この湿度センサと複数の電極パッドを電気的に接続する電極配線を前記傾斜面部に沿わせて形成した湿度センサパッケージ。 In the humidity sensor package according to claim 1 or 2, provided on the surface of the sensor chip substrate, a high flat portion and a low flat portion having different surface heights, and an inclined surface portion connecting between the high and low flat portions, The humidity sensor is formed on the high flat surface portion, a plurality of electrode pads are formed on the low flat surface portion, and an electrode wiring for electrically connecting the humidity sensor and the plurality of electrode pads is formed along the inclined surface portion. Humidity sensor package. 請求項3記載の湿度センサパッケージにおいて、前記センサチップ基板と前記IC基板の電極パッドを導電性ワイヤーで接続し、この導電性ワイヤーを前記湿度センサ形成面よりも低く設けた湿度センサパッケージ。 4. The humidity sensor package according to claim 3, wherein the sensor chip substrate and the electrode pad of the IC substrate are connected by a conductive wire, and the conductive wire is provided lower than the surface on which the humidity sensor is formed. 請求項1または2に記載の湿度センサパッケージにおいて、前記センサチップ基板には、電気的に導通させた表裏面の一方と他方に、前記湿度センサと該湿度センサに導通接続する複数の電極パッドを形成し、
前記支持基板には、接着固定した前記センサチップ基板の複数の電極パッドと対向する位置に、前記IC基板と電気的に接続する複数の電極配線をそれぞれ形成した湿度センサパッケージ。
3. The humidity sensor package according to claim 1, wherein the humidity sensor package includes a plurality of electrode pads that are electrically connected to the humidity sensor on one and the other of the front and back surfaces that are electrically connected to each other. Forming,
A humidity sensor package in which a plurality of electrode wirings electrically connected to the IC substrate are formed on the support substrate at positions facing the plurality of electrode pads of the sensor chip substrate bonded and fixed.
請求項5記載の湿度センサパッケージにおいて、前記センサチップ基板の複数の電極パッドは、該センサチップ基板を所定深さ削って形成した凹部内に設ける湿度センサパッケージ。 6. The humidity sensor package according to claim 5, wherein the plurality of electrode pads of the sensor chip substrate are provided in a recess formed by cutting the sensor chip substrate to a predetermined depth. 請求項5または6に記載の湿度センサパッケージにおいて、前記IC基板と前記支持基板の複数の配線導体を導電性ワイヤーで接続し、この導電性ワイヤーを前記湿度センサ形成面よりも低く設けた湿度センサパッケージ。 The humidity sensor package according to claim 5 or 6, wherein a plurality of wiring conductors of the IC substrate and the support substrate are connected by a conductive wire, and the conductive wire is provided lower than the humidity sensor forming surface. package. 請求項1または2記載の湿度センサパッケージにおいて、前記センサチップ基板の複数の電極パッドを基板側面に形成し、この複数の電極パッドと前記支持基板に設けた電極配線の一端部を互いに直交する位置関係で接続し、該支持基板に設けた電極配線の他端部と前記IC基板の複数の電極パッドを電気的に接続した湿度センサパッケージ。 3. The humidity sensor package according to claim 1, wherein a plurality of electrode pads of the sensor chip substrate are formed on a side surface of the substrate, and positions where the plurality of electrode pads and one end of the electrode wiring provided on the support substrate are orthogonal to each other. A humidity sensor package that is connected in relation to the other end of the electrode wiring provided on the support substrate and a plurality of electrode pads of the IC substrate. 請求項8記載の湿度センサパッケージにおいて、導電性ワイヤーにより前記支持基板の電極配線の他端部と前記IC基板の複数の電極パッドを接続し、この導電性ワイヤーを前記湿度センサ形成面よりも低く設けた湿度センサパッケージ。 9. The humidity sensor package according to claim 8, wherein the other end of the electrode wiring of the support substrate is connected to the plurality of electrode pads of the IC substrate by a conductive wire, and the conductive wire is lower than the humidity sensor forming surface. Humidity sensor package provided. 請求項1または2に記載の湿度センサパッケージにおいて、前記センサチップ基板の複数の電極パッドを基板側面に形成し、この複数の電極パッドと前記IC基板の複数の電極パッドを互いに直交する位置関係で接続した湿度センサパッケージ。 3. The humidity sensor package according to claim 1, wherein a plurality of electrode pads of the sensor chip substrate are formed on a side surface of the sensor chip substrate, and the plurality of electrode pads and the plurality of electrode pads of the IC substrate are in a positional relationship orthogonal to each other. Connected humidity sensor package. 湿度センサ及び該湿度センサと電気的に接続した複数の電極パッドを有し、湿度センサ形成面を電極パッド形成面よりも高く設けたセンサチップ基板を多数形成する工程と、
単一の支持基板上に、前記多数のセンサチップ基板と各センサチップ基板に対応する多数のIC基板を接着固定し、対をなすセンサチップ基板の複数の電極パッドとIC基板の複数の電極パッドを電気的に接続する工程と、
前記センサチップ基板の湿度センサ形成面に金型を押し当てて該金型と前記センサチップ基板、前記IC基板及び前記支持基板の間に生じるキャビティに封止樹脂を充填し、樹脂硬化後に前記金型を外す工程と、
前記支持基板を、一対のセンサチップ基板とIC基板からなるパッケージ単位で切断する工程と、
を有することを特徴とする湿度センサパッケージの製造方法。
Forming a plurality of sensor chip substrates having a humidity sensor and a plurality of electrode pads electrically connected to the humidity sensor, and having a humidity sensor forming surface higher than the electrode pad forming surface;
A plurality of sensor chip substrates and a plurality of IC substrates corresponding to each sensor chip substrate are bonded and fixed on a single support substrate, and a plurality of electrode pads of the sensor chip substrate and a plurality of electrode pads of the IC substrate are paired. Electrically connecting
A mold is pressed against the humidity sensor forming surface of the sensor chip substrate to fill a cavity formed between the mold and the sensor chip substrate, the IC substrate and the support substrate with a sealing resin, and after the resin is cured, the mold Removing the mold,
Cutting the support substrate in a package unit composed of a pair of sensor chip substrate and IC substrate;
A method for manufacturing a humidity sensor package, comprising:
請求項11記載の湿度センサパッケージの製造方法において、前記センサチップ基板の複数の電極パッドと前記IC基板の複数の電極パッドを導電性ワイヤーで接続し、この導電性ワイヤーを前記センサチップ基板の湿度センサ形成面よりも低く設ける湿度センサパッケージの製造方法。 12. The method of manufacturing a humidity sensor package according to claim 11, wherein a plurality of electrode pads of the sensor chip substrate and a plurality of electrode pads of the IC substrate are connected by a conductive wire, and the conductive wire is connected to the humidity of the sensor chip substrate. A method of manufacturing a humidity sensor package provided lower than the sensor formation surface. 請求項11または12記載の湿度センサパッケージの製造方法において、前記センサチップ基板は、
基板表面を覆う絶縁膜上に、前記湿度センサと該湿度センサに電気的に接続した複数の電極配線を形成する工程と、
前記湿度センサを覆う第1の非透湿保護膜を形成する工程と、
前記湿度センサの形成されていない位置で前記第1の非透湿保護膜及び前記基板の一部を除去し、湿度センサ形成面よりも低い電極パッド形成面を形成する工程と、
この電極パッド形成面を覆う絶縁膜を形成する工程と、
前記複数の電極配線の端部上に位置する第1の非透湿保護膜を除去し、除去部分に前記複数の電極配線の端部をそれぞれ露出させるコンタクトホールを形成する工程と、
このコンタクトホールを介して前記複数の電極配線に接続し、該コンタクトホールから前記電極パッド形成面の絶縁膜上まで引き延ばした引出電極配線を形成する工程と、
この引出電極配線及び前記第1の非透湿保護膜を覆う第2の非透湿保護膜を形成する工程と、
前記電極パッド形成面上の前記第2の非透湿保護膜を除去し、除去部分に前記引出電極配線の端部を露出させて複数の電極パッドとする工程と、
により形成する湿度センサパッケージの製造方法。
13. The method of manufacturing a humidity sensor package according to claim 11, wherein the sensor chip substrate is
Forming a humidity sensor and a plurality of electrode wirings electrically connected to the humidity sensor on an insulating film covering a substrate surface;
Forming a first non-breathable protective film covering the humidity sensor;
Removing the first moisture-impermeable protective film and a part of the substrate at a position where the humidity sensor is not formed, and forming an electrode pad forming surface lower than the humidity sensor forming surface;
Forming an insulating film covering the electrode pad forming surface;
Removing the first moisture-impermeable protective film located on the end portions of the plurality of electrode wirings, and forming contact holes that expose the end portions of the plurality of electrode wirings in the removed portions;
Connecting to the plurality of electrode wirings through the contact hole, and forming a lead electrode wiring extending from the contact hole to the insulating film on the electrode pad forming surface;
Forming a second non-moisture permeable protective film covering the lead electrode wiring and the first non-moisture permeable protective film;
Removing the second non-moisture permeable protective film on the electrode pad forming surface, exposing an end portion of the extraction electrode wiring to a removed portion, and forming a plurality of electrode pads;
A method for manufacturing a humidity sensor package formed by:
請求項11または12記載の湿度センサパッケージの製造方法において、前記センサチップ基板は、
基板表面に、表面高さを異ならせた高平面部と低平面部及びこの高低平面部の間をつなぐ傾斜面部を形成する工程と、
この高平面部、低平面部及び傾斜面部を含む基板表面に絶縁膜を形成する工程と、
この絶縁膜の上に、前記高平面部に位置させて前記湿度センサを形成し、該湿度センサと電気的に接続した電極配線を前記高平面部から前記低平面部にかけて前記傾斜面部に沿わせて形成する工程と、
この湿度センサを覆う非透湿保護膜を全体的に形成する工程と、
前記低平面部上の非透湿保護膜を除去し、除去部分に前記電極配線の端部を露出させて複数の電極パッドとする工程と、
により形成する湿度センサパッケージの製造方法。
13. The method of manufacturing a humidity sensor package according to claim 11, wherein the sensor chip substrate is
Forming, on the substrate surface, a high plane portion and a low plane portion having different surface heights, and an inclined surface portion connecting between the high and low plane portions;
Forming an insulating film on the substrate surface including the high flat portion, the low flat portion and the inclined surface portion;
On the insulating film, the humidity sensor is formed so as to be positioned on the high plane portion, and the electrode wiring electrically connected to the humidity sensor is extended along the inclined surface portion from the high plane portion to the low plane portion. Forming the process,
Forming a moisture-impermeable protective film covering the humidity sensor as a whole;
Removing the non-moisture permeable protective film on the low planar portion, exposing the end of the electrode wiring to the removed portion, and forming a plurality of electrode pads;
A method for manufacturing a humidity sensor package formed by:
表裏面の一方と他方に設けた湿度センサと複数の電極パッドを電気的に導通させたセンサチップ基板を多数形成する工程と、
前記センサチップ基板の複数の電極パッドに対応する複数の電極配線を形成した単一の支持基板を準備する工程と、
この単一の支持基板上に前記多数のセンサチップ基板を接着固定し、前記センサチップ基板の複数の電極パッドと対応する前記支持基板の複数の電極配線の一端部を電気的に接続する工程と、
同支持基板上に各センサチップ基板に対応する多数のIC基板を接着固定し、該IC基板の複数の電極パッドと前記支持基板の複数の電極配線の他端部を電気的に接続する工程と、
前記センサチップ基板の湿度センサ形成面に金型を押し当てて該金型と前記センサチップ基板、前記IC基板及び前記支持基板の間に生じるキャビティに封止樹脂を充填し、樹脂硬化後に前記金型を外す工程と、
前記支持基板を、一対のセンサチップ基板とIC基板からなるパッケージ単位で切断する工程と、
を有することを特徴とする湿度センサパッケージの製造方法。
Forming a number of sensor chip substrates in which a plurality of electrode pads are electrically connected to a humidity sensor provided on one and the other of the front and back surfaces;
Preparing a single support substrate having a plurality of electrode wirings corresponding to a plurality of electrode pads of the sensor chip substrate;
Bonding and fixing the plurality of sensor chip substrates on the single support substrate, and electrically connecting one end portions of the plurality of electrode wirings of the support substrate corresponding to the plurality of electrode pads of the sensor chip substrate; ,
Bonding and fixing a number of IC substrates corresponding to each sensor chip substrate on the support substrate, and electrically connecting a plurality of electrode pads of the IC substrate and the other end portions of the plurality of electrode wirings of the support substrate; ,
A mold is pressed against the humidity sensor forming surface of the sensor chip substrate to fill a cavity formed between the mold and the sensor chip substrate, the IC substrate, and the support substrate with a sealing resin. Removing the mold;
Cutting the support substrate in a package unit composed of a pair of sensor chip substrate and IC substrate;
A method for manufacturing a humidity sensor package, comprising:
請求項15記載の湿度センサパッケージの製造方法において、前記IC基板の複数の電極パッドと前記支持基板の複数の配線導体の他端部は、導電性ワイヤーで接続し、この導電性ワイヤーを前記センサチップ基板の湿度センサ形成面よりも低く設ける湿度センサパッケージの製造方法。 16. The method of manufacturing a humidity sensor package according to claim 15, wherein the other electrode pads of the IC substrate and the other end portions of the wiring conductors of the support substrate are connected by a conductive wire, and the conductive wire is connected to the sensor. A manufacturing method of a humidity sensor package provided lower than a humidity sensor forming surface of a chip substrate. 請求項15または16記載の湿度センサパッケージの製造方法において、前記センサチップ基板は、表裏面を電気的に導通させたシリコン基板であって、
前記シリコン基板の表裏面の一方に、湿度センサ形成エリアを画成するための絶縁体を埋め込み形成する工程と、
前記シリコン基板の表裏面の他方に、基板厚さ方向で前記湿度センサ形成エリアに重複させた複数の電極パッド形成エリアを画成するための絶縁体を埋め込み形成する工程と、
前記湿度センサ形成エリアに湿度センサを形成する工程と、
前記複数の電極パッド形成エリアに、前記シリコン基板を介して前記湿度センサと導通接続する複数の電極パッドを形成する工程と、
により形成する湿度センサパッケージの製造方法。
The method of manufacturing a humidity sensor package according to claim 15 or 16, wherein the sensor chip substrate is a silicon substrate in which front and back surfaces are electrically connected,
A step of embedding an insulator for defining a humidity sensor forming area on one of the front and back surfaces of the silicon substrate;
A step of embedding an insulator for defining a plurality of electrode pad forming areas overlapped with the humidity sensor forming area in the substrate thickness direction on the other of the front and back surfaces of the silicon substrate;
Forming a humidity sensor in the humidity sensor formation area;
Forming a plurality of electrode pads in conductive connection with the humidity sensor via the silicon substrate in the plurality of electrode pad formation areas;
A method for manufacturing a humidity sensor package formed by:
請求項15または16記載の湿度センサパッケージの製造方法において、前記センサチップ基板は、表裏面を電気的に導通させたシリコン基板であって、
前記シリコン基板の表裏面の一方に、該表裏面の電気的導通を確保する配線接続エリアを除いて、絶縁体を埋め込み形成する工程と、
前記シリコン基板の表裏面の他方に、基板厚さ方向において前記配線接続エリアと重複する位置に所定深さの凹部を形成し、この凹部内に、複数の電極パッドを形成する工程と、
前記シリコン基板の表裏面の一方に、前記配線接続エリアを含むように位置させて、湿度センサを形成する工程と、
前記シリコン基板の表裏面の他方に、複数の電極パッドを電気的に独立させる開口部を、前記絶縁体を露出させる深さで形成する工程と、
により形成する湿度センサパッケージの製造方法。
The method of manufacturing a humidity sensor package according to claim 15 or 16, wherein the sensor chip substrate is a silicon substrate in which front and back surfaces are electrically connected,
A step of embedding an insulator on one of the front and back surfaces of the silicon substrate, except for a wiring connection area that ensures electrical conduction between the front and back surfaces;
Forming a recess having a predetermined depth in a position overlapping with the wiring connection area in the substrate thickness direction on the other of the front and back surfaces of the silicon substrate, and forming a plurality of electrode pads in the recess;
A step of forming a humidity sensor on one of the front and back surfaces of the silicon substrate so as to include the wiring connection area; and
Forming an opening that electrically separates a plurality of electrode pads on the other of the front and back surfaces of the silicon substrate at a depth that exposes the insulator;
A method for manufacturing a humidity sensor package formed by:
基板表面に形成した湿度センサと電気的に接続する複数の電極パッドを基板側面に配置したセンサチップ基板を多数形成する工程と、
前記センサチップ基板の複数の電極パッドに対応する複数の電極配線を形成した支持基板を準備する工程と、
この支持基板上に前記多数のセンサチップ基板を接着固定し、該センサチップ基板の複数の電極パッドと対応する前記支持基板の複数の電極配線の一端部を互いに直交する位置関係で電気的に接続する工程と、
同支持基板上に各センサチップ基板に対応する多数のIC基板を接着固定し、該IC基板の複数の電極パッドと前記支持基板の複数の電極配線の他端部を電気的に接続する工程と、
前記センサチップ基板の湿度センサ形成面に金型を押し当てて該金型と前記センサチップ基板、前記IC基板及び前記支持基板の間に生じるキャビティに封止樹脂を充填し、樹脂硬化後に前記金型を外す工程と、
前記支持基板を、一対のセンサチップ基板とIC基板からなるパッケージ単位で切断する工程と、
を有することを特徴とする湿度センサパッケージの製造方法。
Forming a plurality of sensor chip substrates having a plurality of electrode pads electrically connected to the humidity sensor formed on the substrate surface disposed on the side surface of the substrate;
Preparing a support substrate on which a plurality of electrode wirings corresponding to a plurality of electrode pads of the sensor chip substrate are formed;
The plurality of sensor chip substrates are bonded and fixed on the support substrate, and one end portions of the plurality of electrode wirings of the support substrate corresponding to the plurality of electrode pads of the sensor chip substrate are electrically connected in a mutually orthogonal positional relationship. And a process of
Bonding and fixing a large number of IC substrates corresponding to each sensor chip substrate on the support substrate, and electrically connecting a plurality of electrode pads of the IC substrate and the other end portions of the plurality of electrode wirings of the support substrate; ,
A mold is pressed against the humidity sensor forming surface of the sensor chip substrate to fill a cavity formed between the mold and the sensor chip substrate, the IC substrate and the support substrate with a sealing resin, and after the resin is cured, the mold Removing the mold,
Cutting the support substrate in a package unit composed of a pair of sensor chip substrate and IC substrate;
A method for manufacturing a humidity sensor package, comprising:
請求項19記載の湿度センサパッケージの製造方法において、前記IC基板の複数の電極パッドと前記支持基板の複数の電極配線の他端部は導電性ワイヤーで接続し、この導電性ワイヤーを前記センサチップ基板の湿度センサ形成面よりも低く設ける湿度センサパッケージの製造方法。 20. The manufacturing method of a humidity sensor package according to claim 19, wherein the plurality of electrode pads of the IC substrate and the other ends of the plurality of electrode wirings of the support substrate are connected by a conductive wire, and the conductive wire is connected to the sensor chip. A manufacturing method of a humidity sensor package provided lower than a humidity sensor forming surface of a substrate. 基板表面に形成した湿度センサと電気的に接続する複数の電極パッドを基板側面に配置したセンサチップ基板を多数形成する工程と、
単一の支持基板上に、前記多数のセンサチップ基板と各センサチップ基板に対応するIC基板を各々の電極パッドが互いに直交する位置関係で密接させて一対ずつ配置し、接着固定する工程と、
互いに直交する位置関係で対向させた前記センサチップ基板と前記IC基板の複数の電極パッドを電気的に接続する工程と、
前記センサチップ基板の湿度センサ形成面に金型を押し当てて該金型と前記センサチップ基板、前記IC基板及び前記支持基板の間に生じるキャビティに封止樹脂を充填し、樹脂硬化後に前記金型を外す工程と、
前記支持基板を、一対のセンサチップ基板とIC基板からなるパッケージ単位で切断する工程と、
を有することを特徴とする湿度センサパッケージの製造方法。
Forming a plurality of sensor chip substrates having a plurality of electrode pads electrically connected to the humidity sensor formed on the substrate surface disposed on the side surface of the substrate;
A plurality of sensor chip substrates and an IC substrate corresponding to each sensor chip substrate are placed in close contact with each other in a positional relationship in which each electrode pad is orthogonal to each other on a single support substrate, and bonded and fixed;
Electrically connecting the sensor chip substrate and the plurality of electrode pads of the IC substrate facing each other in a positional relationship orthogonal to each other;
A mold is pressed against the humidity sensor forming surface of the sensor chip substrate to fill a cavity formed between the mold and the sensor chip substrate, the IC substrate and the support substrate with a sealing resin, and after the resin is cured, the mold Removing the mold,
Cutting the support substrate in a package unit composed of a pair of sensor chip substrate and IC substrate;
A method for manufacturing a humidity sensor package, comprising:
請求項11ないし21のいずれか一項に記載の湿度センサパッケージの製造方法において、前記支持基板には、前記封止樹脂で覆われた面とは反対側の面に、前記IC基板を外部回路と接続するためのSMD端子を形成する湿度センサパッケージの製造方法。 The humidity sensor package manufacturing method according to any one of claims 11 to 21, wherein the IC substrate is placed on a surface opposite to the surface covered with the sealing resin on the supporting substrate. Manufacturing method of humidity sensor package which forms SMD terminal for connecting to.
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