JP2011074424A - Heat treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a heat treatment method by which variation of heat treatment temperature is reduced while suppressing an increase in the scale of an apparatus, in the heat treatment method for heating a plurality of objects to be treated in a pressure-reduced treating chamber. <P>SOLUTION: The heat treatment method for heating a plurality of objects to be treated 51, 52, 53, 54 in the pressure-reduced treating chamber 10 includes a process for arranging the plurality of objects to be treated 51, 52, 53, 54 across a heat shield plate 30 in the treating chamber 10 and a process for heat treating the arranged plurality of objects to be treated 51, 52, 53, 54. In the process for heat treating the plurality of objects to be treated 51, 52, 53, 54, the heat shield plate 30 is kept at a temperature lower than that of the plurality of objects to be treated 51, 52, 53, 54. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a heat treatment method, and more particularly to a heat treatment method capable of suppressing variation in heat treatment temperature among a plurality of objects to be processed.

  When heat treatment is simultaneously performed on a plurality of objects to be treated, there may be a problem that the heat treatment temperature varies among the objects to be treated, and the quality after the heat treatment varies among the objects to be treated. In particular, unlike the heat treatment by atmosphere heating in which the atmosphere is heated by a heater or the like and the object to be processed is heated through the atmosphere, for example, plasma processing in which the object to be processed is directly heated using discharge in a reduced pressure atmosphere. In such a heat treatment, the variation in the heat treatment temperature as described above becomes particularly significant.

  On the other hand, for example, in a plasma processing apparatus, a technique (hot wall type plasma processing apparatus) has been proposed in which a heater is disposed on the inner wall of a processing chamber to suppress variation in heat treatment temperature between objects to be processed (hot wall type plasma processing apparatus). For example, see Patent Document 1).

JP-A-7-118826

  However, when the hot wall type plasma processing apparatus is employed, a heater or the like needs to be embedded inside the wall surface of the processing chamber, which causes a problem that the apparatus becomes large.

  Accordingly, an object of the present invention is to provide a heat treatment method for heating a plurality of objects to be processed in a depressurized processing chamber, and capable of reducing variations in heat treatment temperature while suppressing an increase in the size of the apparatus. Is to provide.

  The heat treatment method according to the present invention is a heat treatment method for heating a plurality of objects to be processed in a reduced pressure processing chamber. This heat treatment method includes a step of arranging a plurality of objects to be processed in a processing chamber with a heat shield member interposed therebetween, and a step of heat-treating the plurality of objects to be processed. And in the process of heat-treating the object to be processed, the heat shield member is maintained at a lower temperature than the plurality of objects to be processed.

  The present inventor has conducted detailed studies on measures for reducing variations in heat treatment temperature in a heat treatment method for heating a plurality of objects to be processed in a decompressed treatment chamber. As a result, the following knowledge was obtained and the present invention was conceived.

  That is, when a workpiece is directly heated in a reduced-pressure atmosphere as in plasma processing, when a plurality of workpieces are charged into the processing chamber and heat treatment is performed, the workpiece disposed near the center of the processing chamber The temperature of an object may become high compared with the temperature of the to-be-processed object arrange | positioned near the inner wall. This is because the workpieces disposed near the center of the processing chamber are mutually heated by heat radiation between adjacent workpieces, whereas the workpieces disposed near the inner wall It does not receive heat radiation from other objects to be processed on the side facing the inner wall. And, if the temperature of the inner wall of the processing chamber is low compared to the object to be processed, like a cold wall type plasma processing apparatus that does not place a heater on the inner wall of the processing chamber, sufficient heat radiation from the inner wall cannot be expected, The temperature of the object to be processed arranged near the inner wall is lowered. As a result, a variation in the heat treatment temperature occurs between the workpiece disposed near the center of the processing chamber and the workpiece disposed near the inner wall.

  Therefore, for example, in a plasma processing apparatus, it is considered that a measure for arranging a jig made of a conductor between a region where an object to be processed is arranged and an inner wall of the processing chamber is effective. As a result, the jig generates heat due to the discharge, and the object to be processed disposed near the inner wall is heated by the heat radiation from the jig, so that variations in the heat treatment temperature can be suppressed.

  However, in the above countermeasure, since it is necessary to place a jig between the region where the workpiece is placed and the inner wall of the processing chamber, when using the same processing chamber, It is necessary to reduce the quantity, which reduces the production efficiency. On the other hand, when a processing chamber that allows for the placement of the jig is employed, the processing chamber becomes larger. Moreover, when the area | region for arrange | positioning the said jig | tool by reducing the space | interval of to-be-processed objects is ensured, the temperature rise by thermal radiation between adjacent to-be-processed objects becomes still more remarkable, and the arrangement | positioning of a jig | tool is The effect may be offset. Further, as described above, when a hot wall type plasma processing apparatus is employed, there arises a problem that the apparatus becomes large.

  On the other hand, in the heat treatment method of the present invention, a plurality of objects to be processed are disposed in the processing chamber with the heat shield member interposed therebetween, and the object to be processed is subjected to heat treatment. Is maintained at a lower temperature than the workpiece. Therefore, heat radiation between adjacent workpieces is blocked, and heat radiation from the heat shielding member to the workpiece is also suppressed, so that variations in heat treatment temperature can be reduced. Further, it is possible to prevent the apparatus itself from becoming large as in the case where a hot wall type plasma processing apparatus is employed. As a result, according to the heat treatment method of the present invention, in the heat treatment method for heating a plurality of objects to be processed in a reduced pressure processing chamber, it is possible to reduce variation in heat treatment temperature while suppressing an increase in the size of the apparatus. Possible heat treatment methods can be provided.

  In the heat treatment method, in the step of arranging a plurality of objects to be processed, a plurality of objects to be processed made of a conductor are arranged in the processing chamber in a state of being electrically connected to electrodes arranged in the processing chamber. Also good. In this case, in the step of heat-treating the plurality of objects to be processed, the plurality of objects to be processed are heated by the discharge phenomenon, and the heat shield member is insulated from the electrodes, so that the heat shield member is It may be maintained at a lower temperature than the object to be processed.

  For the heat treatment in which the object to be processed is directly heated by the discharge phenomenon, it is preferable to employ the heat treatment method of the present invention that can block heat radiation between adjacent objects to be processed. In addition, since the heat shield member is not heated by the discharge phenomenon because the heat shield member is insulated from the electrodes, it is easy to maintain the heat shield member at a lower temperature than the object to be processed.

  In the above heat treatment method, a discharge phenomenon occurs between a region where the object to be processed is disposed in the processing chamber and an inner wall of the processing chamber, and a heating jig that generates heat in the process of heat-processing the object to be processed, such as a conductor. An exothermic jig heated by the above may be arranged.

  By adopting such a configuration, the temperature of the workpiece disposed near the inner wall is suppressed while suppressing the heating temperature of the workpiece disposed near the center of the processing chamber due to the effect of the heat treatment method of the present invention. Can be increased by infrared irradiation from the heating jig, and the variation in the heat treatment temperature between the objects to be processed in the processing chamber can be further suppressed.

  Examples of the heat treatment in which the workpiece is directly heated by the discharge phenomenon include plasma treatment. More specifically, plasma carburizing treatment, plasma nitriding treatment, plasma carbonitriding treatment, and the like are performed by the heat treatment method of the present invention. Can do. Furthermore, when a cold wall type plasma processing apparatus having no heater embedded in the wall surface of the processing chamber is employed, the effect of the heat treatment method of the present invention is more remarkable.

  In the heat treatment method, at least a part of the heat shield member may be made of an insulator. Thereby, insulation with a heat-shielding member and an electrode can be implement | achieved easily.

  In the heat treatment method, in the step of arranging the plurality of objects to be processed, an adhesion preventing member that suppresses the adhesion of the conductor to the region made of the insulator of the heat shield member in the step of heat-treating the objects to be processed is provided. The heat shield member may be disposed so as to cover at least a part of the region made of the insulator.

  When an object to be processed made of a conductor is heated by a discharge phenomenon, the conductor constituting the object to be processed may adhere to a region made of an insulator of a heat shield member due to a sputtering phenomenon. If the heat shield member and the electrode are electrically connected by the conductor attached to the heat shield member, the heat shield member may be heated by a discharge phenomenon, and the heat shield member may not perform its original function. . On the other hand, by arranging the adhesion preventing member as described above, it is possible to more reliably ensure insulation between the heat shield member and the electrode.

  In the heat treatment method, a sacrificial film that can be peeled off from the heat shielding member is formed on the surface of the region made of the insulator of the heat shielding member together with the conductor adhered in the step of heat-treating the object to be processed. It may be.

  As a result, even if the conductor adheres to the heat shield member due to the spatter phenomenon as a result of long-time use or as a result of multiple use, the heat shield is removed by peeling the conductor together with the sacrificial film. Insulation between the member and the electrode can be ensured more reliably.

  In the heat treatment method, the heat shield member may include a pipe for flowing a cooling heat medium (for example, water). Thereby, in the process of heat-treating the object to be processed, the heat medium can be passed through the pipe and the heat shield member can be actively cooled, so that the temperature of the heat shield member can be more reliably kept low.

  As is apparent from the above description, according to the heat treatment method of the present invention, in the heat treatment method for heating a plurality of objects to be processed in a reduced pressure processing chamber, the heat treatment temperature can be reduced while suppressing an increase in the size of the apparatus. A heat treatment method capable of reducing variation can be provided.

It is a schematic sectional drawing for demonstrating the plasma processing method. It is a schematic sectional drawing in alignment with line segment II-II of FIG. It is the schematic which shows an example of a heat-shielding member. It is a schematic sectional drawing in alignment with line segment IV-IV of FIG. It is the schematic which shows another example of a heat-shielding member. It is a schematic sectional drawing in alignment with line segment VI-VI of FIG. It is the schematic which shows another example of a heat-shielding member. It is a schematic sectional drawing in alignment with line segment VIII-VIII of FIG. It is the schematic which shows another example of a heat-shielding member. It is a schematic sectional drawing in alignment with line segment XX of FIG. It is the schematic which shows another example of a heat-shielding member. It is a schematic sectional drawing in alignment with line segment XII-XII of FIG. It is the schematic which shows another example of a heat-shielding member. It is a schematic sectional drawing in alignment with line segment XIV-XIV of FIG. It is a schematic sectional drawing which shows another example of a heat-shielding member.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated.

  First, an embodiment of the present invention will be described by taking as an example a case where plasma processing (plasma carburizing, plasma nitriding, plasma carbonitriding, etc.) is performed on an object to be processed made of steel. Referring to FIGS. 1 and 2, the plasma processing, which is the heat treatment in the present embodiment, is performed in a plurality of processed objects 51, 52, 53, made of steel in the decompressed processing chamber 10 of the plasma processing apparatus 1. This is a heat treatment method for heating 54. And the plasma processing method in this Embodiment arrange | positions the some to-be-processed object 51,52,53,54 in the process chamber 10, on both sides of the heat-shielding board 30 as a heat-shielding member, and the said to-be-processed And heating the objects 51, 52, 53, 54.

  More specifically, in the plasma processing method in the present embodiment, first, the workpieces 51, 52, 53, 54 are placed on the electrode 20 disposed in the processing chamber 10. Thus, the workpieces 51, 52, 53, 54 are arranged in the processing chamber 10 in a state of being electrically connected to the electrode 20. At this time, the heat shield plate 30 is disposed between the workpieces 51, 52, 53, and 54, respectively. As a result, the workpieces 51, 52, 53, and 54 are not directly opposed to each other.

Next, the workpieces 51, 52, 53, 54 are heat-treated by being heated in a predetermined atmosphere. Specifically, for example, when plasma nitridation is performed, nitrogen (N ₂ ) and hydrogen (H ₂ ) are placed in the processing chamber 10 so that the pressure in the processing chamber 10 is reduced (for example, about 100 Pa). ), At least one selected from the group consisting of methane (CH ₄ ) and argon (Ar). Then, by applying a predetermined voltage between the electrode 20 which is one electrode and the inner wall 10A of the processing chamber 10 which is the other electrode, the workpieces 51 and 52 which are electrically connected to the electrode 20 are applied. , 53, 54 and the inner wall 10A are discharged. As a result, while the workpieces 51, 52, 53, and 54 are heated to a predetermined temperature, nitrogen enters the surface layer portion of the workpieces 51, 52, 53, and 54. Thereby, the plasma nitriding treatment of the workpieces 51, 52, 53, 54 is achieved.

  Here, in the process of heating the workpieces 51, 52, 53, 54, the heat shield plate 30 is insulated from the electrode 20, so that the heat shield plate 30 is treated with the workpieces 51, 52, It is maintained at a temperature lower than 53 and 54. More specifically, the heat shield plate 30 has the following structure, so that it is insulated from the electrode 20 and maintained at a lower temperature than the workpieces 51, 52, 53, 54.

  With reference to FIG. 3 and FIG. 4, the heat shield plate 30 in the present embodiment includes a main body portion 31 having a plate shape and a concave portion that supports the main body portion 31 by fitting an end portion of the main body portion 31. And a support jig 32 having 32C. The support jig 32 is made of an insulator such as ceramics (for example, aluminum oxide, silicon nitride, etc.). On the other hand, although the material which comprises the main-body part 31 is not specifically limited, Considering the ease of a process, metals, such as steel, can be employ | adopted, for example. Then, the heat insulating plate 30 is disposed in the processing chamber 10 so that the support jig 32 made of an insulator is in contact with the electrode 20 and the main body 31 and the electrode 20 are not in contact (FIGS. 1 and 2). The heat shield plate 30 is insulated from the electrode 20.

  Thus, in the plasma processing in the present embodiment, a plurality of objects to be processed 51, 52, 53, 54 are arranged in the processing chamber 10 with the heat shield plate 30 interposed therebetween. And the said to-be-processed object 51,52,53,54 is heat-processed (plasma process), and in the case of the said plasma process, the thermal-insulation board 30 is maintained at low temperature rather than the to-be-processed object 51,52,53,54. Is done. Therefore, the heat radiation between the adjacent workpieces 51, 52, 53, 54 is blocked, and the heat radiation from the heat shield plate 30 to the workpieces 51, 52, 53, 54 is also suppressed. Variation in temperature can be reduced. Further, it is possible to prevent the apparatus itself from becoming large as in the case where a hot wall type plasma processing apparatus is employed. As a result, according to the plasma processing method in the present embodiment, it is possible to suppress an increase in the size of the apparatus in the plasma processing in which the plurality of objects 51, 52, 53, 54 are heated in the decompressed processing chamber 10. However, variations in the heat treatment temperature can be reduced.

  Further, the specific structure of the heat shield plate 30 as the heat shield member is not limited to the above structure, and various structures can be adopted. Hereinafter, modifications of the heat shield plate 30 will be illustrated.

(Modification 1)
With reference to FIG. 5 and FIG. 6, the heat shield plate 30 in Modification 1 has a pair of support jigs 32 having a columnar shape and a plate-like shape disposed on the pair of support jigs 32. A main body 31 is provided. And the support jig 32 consists of insulators, such as ceramics similarly to the case of the said embodiment. On the other hand, the main body 31 is made of a metal such as steel. The heat shield plate 30 is disposed in the processing chamber 10 so that the support jig 32 made of an insulator is in contact with the electrode 20 and the main body 31 and the electrode 20 are not in contact with each other. It can be insulated from the electrode 20.

(Modification 2)
Referring to FIGS. 7 and 8, the heat shield plate 30 in the second modification does not include the support jig 32 unlike the case of the above embodiment and the first modification. And the main-body part 31 of the heat insulation board 30 consists of insulators, such as ceramics. Therefore, the heat shield 30 can be insulated from the electrode 20 by placing the main body 31 directly on the electrode 20.

(Modification 3)
Referring to FIGS. 9 and 10, the heat shield 30 in the third modification basically has the same configuration as the heat shield 30 in the first modification described with reference to FIGS. 5 and 6. Have the same effect. However, the heat shield plate 30 according to the modified example 3 further includes an adhesion preventing jig 33 that suppresses the conductor from adhering to the support jig 32 made of an insulator. 30 is different. More specifically, the adhesion preventing jig 33 has a box shape (hexahedron shape) in which one surface is missing, and the surface to be opposed to the missing surface is the main body portion 31 and the support jig 32. The support jig 32 is at least partially covered with the support jig 32. Thereby, it is suppressed that a conductor (steel) adheres to the support jig 32 by the sputtering phenomenon resulting from the discharge phenomenon. As a result, insulation between the heat shield plate 30 and the electrode 20 can be more reliably ensured. Further, by adopting the above structure, it is possible to lengthen the maintenance cycle such as removing the conductor attached to the heat shield plate 30 or replacing the heat shield plate 30. In addition, although the material which comprises the adhesion prevention jig | tool 33 is not specifically limited, It does not need to be an insulator and metal, such as steel, can be employ | adopted considering the ease of a process, for example.

(Modification 4)
With reference to FIGS. 11 and 12, the heat shield plate 30 in the modified example 4 has basically the same configuration as the heat shield plate 30 of the modified example 3 described based on FIGS. 9 and 10. ing. However, the support jig 32 of the heat shield plate 30 in Modification 4 includes a base plate 32B having a plate shape and a column portion 32A having a column shape disposed on the base plate 32B. However, it is different from the heat shield plate 30 of the third modification. More specifically, the base plate 32B is made of an insulator such as ceramics and has a plate shape. On the other hand, the material constituting the column portion 32A is not particularly limited, but it is not necessary to be an insulator. For example, in consideration of ease of processing, a metal such as steel can be employed. Then, the base plate 32B made of an insulator is in contact with the electrode 20, and the heat shield plate 30 is disposed in the processing chamber 10 so that the column portion 32A, the adhesion preventing jig 33, and the main body portion 31 and the electrode 20 are not in contact with each other. Thus, the heat shield plate 30 can be insulated from the electrode 20.

(Modification 5)
Referring to FIGS. 13 and 14, the heat shield plate 30 in the modified example 5 has basically the same configuration as the heat shield plate 30 in the modified example 2 described based on FIGS. 7 and 8. Have the same effect. However, the heat shield plate 30 in the modified example 5 further includes an adhesion preventing jig 33 that suppresses the conductor from adhering to the main body 31 made of an insulator. Is different.

  More specifically, the adhesion preventing jig 33 has a box shape (hexahedron shape) in which one surface is missing, and a surface that should face the missing surface is in contact with the body portion 31 and the body portion. The main body 31 is covered so as to cover at least a part of 31. Thereby, it is suppressed that a conductor (steel) adheres to the main-body part 31 by the sputtering phenomenon resulting from the discharge phenomenon. As a result, insulation between the heat shield plate 30 and the electrode 20 can be more reliably ensured. Further, by adopting the above structure, it is possible to lengthen the maintenance cycle such as removing the conductor attached to the heat shield plate 30 or replacing the heat shield plate 30. In addition, although the material which comprises the adhesion prevention jig | tool 33 is not specifically limited, It does not need to be an insulator and metal, such as steel, can be employ | adopted considering the ease of a process, for example.

(Modification 6)
Referring to FIG. 15, the heat shield plate 30 in the modified example 6 has basically the same configuration as the heat shield plate 30 of the modified example 2 described based on FIGS. 7 and 8, and the same There is an effect. However, the heat shield plate 30 in the modified example 6 is boron nitride as a sacrificial film that can be peeled off from the heat shield plate 30 together with the conductor attached in the step of plasma processing the workpieces 51, 52, 53, 54. The film 31A is different from the heat shield plate 30 of Modification 2 in that the film 31A is formed so as to cover the surface of the main body 31.

  As a result, even when a conductor (for example, steel) adheres to the heat shield plate 30 due to sputtering as a result of long-time use or multiple times of use, the conductor is combined with the boron nitride film 31A. By separating, the insulation between the heat shield plate 30 and the electrode 20 can be ensured more reliably. Further, by adopting boron nitride as a material constituting the sacrificial film, the sacrificial film (boron nitride film 31A) is formed using, for example, water without using a corrosive liquid such as an acid or an oxidizing liquid. By washing away, the conductor can be easily removed from the heat shield plate 30. Furthermore, when a conductor adheres to the heat shield plate 30, an insulation between the heat shield plate 30 and the electrode 20 may be secured by further forming a boron nitride film 31A thereon.

  In addition, the structure of the heat shield plate 30 in the above-described embodiment and modification is an example of the structure of the heat shield member of the present invention, and various structures other than those described above can be adopted. For example, the heat shield plate 30 as the heat shield member may include a pipe for flowing a cooling heat medium (for example, water). Thereby, in the process of heat-treating the workpieces 51, 52, 53, 54 (for example, plasma treatment), a heat medium can be flowed through the tube and the heat shield plate 30 can be actively cooled. It can be surely suppressed.

  Further, in the plasma processing, the objects to be processed 51, 52, 53, 54 are disposed between the region in the processing chamber 10 where the objects 51, 52, 53, 54 are disposed and the inner wall 10 </ b> A of the processing chamber 10. A heat generating jig that generates heat in the plasma processing step may be disposed. More specifically, referring to FIG. 1 and FIG. 2, for example, a heating jig made of steel is provided between the region where the workpieces 51, 52, 53, 54 are disposed and the inner wall 10 </ b> A of the processing chamber 10. It can be disposed on the electrode 20. Thereby, while suppressing the heating temperature of the to-be-processed objects 51, 52, 53, 54 arrange | positioned near the center of the process chamber 10 by the effect by the said heat shield plate 30, the to-be-processed object 51 arrange | positioned in the inner wall 10A vicinity is suppressed. , 52, 53, and 54 can be increased by infrared irradiation from the heating jig, and the variation in the heat treatment temperature between the workpieces 51, 52, 53, and 54 in the processing chamber 10 can be further suppressed.

  In addition, since the heat shield plate 30 can be disposed between the workpieces 51, 52, 53, 54, the region where the workpieces 51, 52, 53, 54 are simply disposed in the processing chamber 10 and the inner wall of the processing chamber 10. Compared to the case where a heating jig is disposed between the first and second heating elements 10A, the amount of the workpieces 51, 52, 53, and 54 and the inner dimensions of the processing chamber 10 are less likely to be restricted. Furthermore, by arranging the heat shield plate 30, the objects to be processed 51, 52, 53, 54 are densely arranged near the center of the processing chamber 10, and the amount of 51, 52, 53, 54 to be processed simultaneously can be increased. it can. Further, even when the heating jig is arranged as described above, the workpieces 51, 52, 53, 54 are densely arranged near the center of the processing chamber 10 to form an excess space near the inner wall 10A. By disposing a heating jig in the space, the plasma treatment can be performed without impairing the amount of charge.

  The embodiment disclosed this time is to be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  The heat treatment method of the present invention can be applied particularly advantageously to heat treatment that is required to suppress variation in heat treatment temperature among a plurality of workpieces.

  DESCRIPTION OF SYMBOLS 1 Plasma processing apparatus, 10 process chamber, 10A inner wall, 20 electrode, 30 heat shield plate, 31 main-body part, 31A boron nitride film, 32 support jig, 32A pillar part, 32B base plate, 32C recessed part, 33 adhesion prevention jig , 51, 52, 53, 54 Workpieces.

Claims (5)

A heat treatment method for heating a plurality of objects to be processed in a decompressed processing chamber,
Arranging the plurality of objects to be processed with a heat shielding member interposed in the processing chamber;
And a step of heat-treating the plurality of objects to be processed arranged,
The heat treatment method, wherein in the step of heat-treating the object to be processed, the heat shield member is maintained at a lower temperature than the plurality of objects to be processed. In the step of arranging the plurality of objects to be processed, the plurality of objects to be processed made of a conductor are arranged in the processing chamber in a state of being electrically connected to electrodes arranged in the processing chamber,
In the step of heat-treating the plurality of objects to be processed, the plurality of objects to be processed are heated by a discharge phenomenon, and the heat shield member is insulated from the electrode, whereby the heat shield member is The heat treatment method according to claim 1, wherein the heat treatment method is maintained at a lower temperature than the plurality of objects to be processed.   The heat treatment method according to claim 2, wherein at least a part of the heat shield member is made of an insulator.   In the step of arranging the plurality of objects to be processed, an adhesion preventing member that suppresses adhesion of a conductor to a region made of the insulator of the heat shield member in the step of heat-treating the object to be processed is the insulator. The heat processing method of Claim 3 arrange | positioned so that at least one part of the area | region which consists of may be covered.   On the surface of the region made of the insulator of the heat shield member, a sacrificial film that can be peeled off from the heat shield member together with the conductor attached in the step of heat-treating the object to be processed is formed. The heat treatment method according to claim 3 or 4.

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