JP2011071426A - Substrate processing apparatus, and method of manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve response of temperature control in a reaction container by controlling hydrogen gas leakage from the container to the atmosphere. <P>SOLUTION: A substrate processing apparatus includes a reaction container to hold a substrate, a hydrogen gas supply means to supply a hydrogen gas into the reaction container, a heating means which is arranged outside of the reaction container and heats the substrate through the reaction container, an outside container to hold the reaction container and heating means, an inert gas supply means to supply the inert gas into a space between the outside container and reaction container, a vent hole to communicate inside/outside of the outside container, an exhaustion means to exhaust the atmosphere of space between the outside container and reaction container, an oxygen concentration measuring means to measure an oxygen concentration of space between the outside container and reaction container, a hydrogen concentration measuring means to measure a hydrogen concentration of space between the outside container and reaction container, a temperature measuring means to measure a temperature of space between the outside container and reaction container, and a control means to control an operation of each means. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus for processing a substrate and a method for manufacturing a semiconductor device.

As a process of manufacturing a semiconductor device such as a DRAM or an IC, a substrate processing process has been performed in which hydrogen (H ₂ ) gas is supplied to a substrate surface heated to a predetermined temperature to process the substrate. At this time, if hydrogen gas leaks into the atmosphere, there is a risk of causing an explosion. For this reason, a soaking tube is provided so as to surround the outer periphery of the reaction vessel containing the substrate, and the double structure of the reaction vessel and the soaking tube is used to suppress the leakage of hydrogen gas from the reaction vessel to the atmosphere ( Furthermore, the space between the reaction vessel and the soaking tube was filled with nitrogen (N ₂ ) gas to ensure safety when hydrogen gas leaked from the reaction vessel.

  In the above, heating of the substrate accommodated in the reaction vessel is performed by providing a heater so as to surround the outer periphery of the soaking tube and conducting heat from the heater through the soaking tube and the reaction vessel. However, the heating by heat conduction has a slow moving speed, and the temperature control responsiveness may be lowered by providing a double structure of the reaction vessel and the soaking tube.

  The present invention provides a substrate processing apparatus and a semiconductor device manufacturing method capable of improving the responsiveness of temperature control in a reaction container while suppressing leakage of hydrogen gas from the reaction container to the atmosphere. With the goal.

  According to one aspect of the present invention, a reaction container that accommodates a substrate, a hydrogen gas supply unit that supplies hydrogen gas into the reaction container, and the substrate provided outside the reaction container, the substrate through the reaction container. A heating means for heating the reaction container and an external container for housing the heating means, an inert gas supply means for supplying an inert gas into the external container, and a vent for communicating the inside and outside of the external container; Exhaust means for exhausting the atmosphere in the space between the external container and the reaction container, oxygen concentration measuring means for measuring the oxygen concentration in the space between the external container and the reaction container, the external container, and the Hydrogen concentration measuring means for measuring the hydrogen concentration in the space between the reaction container, temperature measuring means for measuring the temperature in the space between the external container and the reaction container, and control for controlling the operation of each means Means The control means starts the supply of the inert gas by the inert gas supply means, and then performs the measurement by the hydrogen concentration measurement means, the oxygen concentration measurement means, and the temperature measurement means, and the hydrogen concentration According to at least two measurement results among the measurement results of the measurement means, the oxygen concentration measurement means, and the temperature measurement means, heating by the heating means, supply of hydrogen gas by the hydrogen gas supply means, and by the exhaust means There is provided a substrate processing apparatus for controlling exhaust gas.

According to another aspect of the present invention, a reaction vessel that accommodates a substrate, a hydrogen gas supply means that supplies hydrogen gas into the reaction vessel, and provided outside the reaction vessel, the reaction vessel via the reaction vessel A heating means for heating the substrate; an external container for accommodating the reaction container and the heating means; an inert gas supply means for supplying an inert gas into the external container; and a vent for communicating the inside and outside of the external container; An exhaust means for exhausting an atmosphere in a space between the outer container and the reaction container; an oxygen concentration measuring means for measuring an oxygen concentration in a space between the outer container and the reaction container; and the outer container; A hydrogen concentration measuring means for measuring a hydrogen concentration in a space between the reaction container, a temperature measuring means for measuring a temperature in a space between the external container and the reaction container, and controlling operations of the respective means. Control means, A method of manufacturing a semiconductor device implemented by a substrate processing apparatus, wherein the control means starts the supply of an inert gas by the inert gas supply means, the hydrogen concentration measuring means, and the oxygen concentration measurement And a step of performing measurement by the temperature measurement means, and by the heating means according to at least two measurement results of the hydrogen concentration measurement means, the oxygen concentration measurement means, and the temperature measurement means. There is provided a method for manufacturing a semiconductor device, comprising: heating, supply of hydrogen gas by the hydrogen gas supply means, and control of exhaust by the exhaust means.

  According to the substrate processing apparatus and the method for manufacturing a semiconductor device according to the present invention, it is possible to improve the responsiveness of temperature control in the reaction container while suppressing leakage of hydrogen gas from the reaction container to the atmosphere. Become.

It is a schematic block diagram of the substrate processing apparatus which concerns on one Embodiment of this invention. It is a table | surface figure which shows the start conditions of hydrogen gas supply in the reaction container. It is a table | surface figure which shows the control content immediately after hydrogen gas supply in the reaction container. It is a table | surface figure which shows the start conditions of the rapid cooling process of a reaction container. It is a table | surface figure which shows the control content immediately after the start of the rapid cooling process of the reaction container. It is a graph which shows the responsiveness of the temperature control which concerns on the Example of this invention. It is a graph which shows the responsiveness of the temperature control which concerns on a comparative example.

<One Embodiment of the Present Invention>
Hereinafter, an embodiment of the present invention will be described.

(1) Configuration of Substrate Processing Apparatus First, the configuration of the substrate processing apparatus according to the present embodiment will be described with reference to FIG.

(Reaction vessel)
As shown in FIG. 1, the substrate processing apparatus according to the present embodiment includes a reaction vessel 5 that accommodates a wafer 1 as a substrate. The reaction vessel 5 is made of quartz (SiO ₂ ), silicon carbide (SiC), or the like. It is made of a non-metallic heat-resistant material, and has a cylindrical shape with the upper end closed and the lower end opened. A processing chamber 5 a is configured in the reaction vessel 5. The processing chamber 5a is configured to be able to accommodate the wafer 1 in a state where the wafers 1 are stacked in multiple stages in the vertical direction in a horizontal posture by a boat 4 described later.

  At the lower end of the reaction vessel 5, a seal cap 9 is provided as a furnace port lid. The seal cap 9 is made of a metal member such as stainless steel and is formed in a disk shape. The seal cap 9 is configured to be movable up and down by the boat elevator 16, and is configured so that the lower end of the reaction vessel 5 is hermetically sealed through an O-ring (not shown) when the seal cap 9 is raised. Yes. In the vicinity of the lower center of the seal cap 9, a rotation mechanism 8 for rotating the boat 4 described later is provided. A rotating shaft (not shown) of the rotating mechanism 8 passes through the seal cap 9 and is connected to a lower end portion of the heat insulating cylinder 4 c provided on the seal cap 9. The heat insulating cylinder 4c is made of a heat-resistant non-metallic material such as quartz or silicon carbide, and is formed in a cylindrical shape. The heat insulating cylinder 4c supports the boat 4 described above from below. The boat 4 is made of a heat-resistant non-metallic material such as quartz or silicon carbide, and is configured to hold a plurality of (for example, 50 to 200) wafers 1 in a horizontal posture and stacked in multiple stages in the vertical direction. Yes.

An upstream end of the exhaust pipe 20 is connected below the side wall of the reaction vessel 5. In the exhaust pipe 20,
In order from the upstream side, a pressure sensor 20c, an APC (Auto Pressure Controller) valve 20b, and a vacuum pump 20a are provided. A reaction vessel exhaust system that exhausts the atmosphere in the reaction vessel 5 (inside the processing chamber 5a) is mainly configured by the exhaust pipe 20, the pressure sensor 20c, the APC valve 20b, and the vacuum pump 20a.

(Hydrogen gas supply means)
A hydrogen gas introduction nozzle 7 is provided on the side wall of the reaction vessel 5 so as to extend from the lower end to the upper end of the reaction vessel 5. The downstream end of the hydrogen gas introduction nozzle 7 is open to the ceiling of the reaction vessel 5. The downstream end of the hydrogen gas supply pipe 30 is connected to the upstream end of the hydrogen gas introduction nozzle 7. The hydrogen gas supply pipe 30 is provided with a hydrogen gas supply source 30a for supplying hydrogen (H ₂ ) gas, a mass flow controller 30b as flow rate control means, and an opening / closing valve 30c in order from the upstream side. By opening the opening / closing valve 30c while adjusting the flow rate by the mass flow controller 30b, the H ₂ gas supplied from the hydrogen gas supply source 30a is passed through the hydrogen gas introduction nozzle 7 and the ceiling of the reaction vessel 5 to the processing chamber 5a. It is comprised so that it can supply in. The hydrogen gas supply means is mainly configured by the hydrogen gas introduction nozzle 7, the hydrogen gas supply pipe 30, the hydrogen gas supply source 30a, the mass flow controller 30b, and the open / close valve 30c.

(heater)
Outside the reaction vessel 5, a heater 6 is provided as a heating means for heating the wafer 1 through the side wall of the reaction vessel 5. The heater 6 is provided in a cylindrical shape so as to surround the outer periphery of the reaction vessel 5 concentrically. The heater 6 is configured as an energizing heater, for example. As described above, since the reaction vessel 5 according to the present embodiment is configured as a single tube, the reaction vessel using the heater 6 is compared with a conventional substrate processing apparatus in which the reaction vessel is configured with a double tube structure. 5 can be ensured without lowering the responsiveness of the temperature control within the wafer 5 (temperature control of the wafer 1).

(External container)
On the outer periphery of the heater 6, a reaction container 5 and an external container 10 that houses the heater 6 are provided. The outer container 10 is provided so as to surround the outer periphery of the heater 6 concentrically, and is formed in a cylindrical shape. The upper end of the outer container 10 is closed, and the lower end of the outer container 10 is hermetically sealed. A vent 15 is provided below the side wall of the outer container 10 to communicate the inside and outside of the outer container 10.

(Inert gas supply means)
An inert gas supply nozzle 12 is provided at the lower end of the outer container 10. The inert gas supply nozzle 12 is erected in the vertical direction. At the downstream end of the inert gas supply nozzle 12 is a lower end portion of a space between the outer container 10 and the reaction container 5, and is used as an inert gas (purge gas) between the heater 6 and the reaction container 5, for example. A gas supply port for ejecting N ₂ gas is provided. The upstream end of the inert gas supply nozzle 12 is connected to the downstream end of the inert gas supply pipe 40. The inert gas supply pipe 40 is provided with an inert gas supply source 40a for supplying nitrogen (N ₂ ) gas, a mass flow controller 40b as a flow control means, and an opening / closing valve 40c in order from the upstream side. By opening the opening / closing valve 30c while adjusting the flow rate by the mass flow controller 40b, the N ₂ gas supplied from the inert gas supply source 40a is passed between the external vessel 10 and the reaction vessel 5 via the inert gas introduction nozzle 12. It is comprised so that it can supply to the space 10a between. An inert gas supply means is mainly configured by the inert gas supply nozzle 12, the inert gas supply pipe 40, the inert gas supply source 40a, the mass flow controller 40b, and the open / close valve 40c.

(Exhaust means)
An upstream end of the exhaust pipe 50 is provided at the upper end of the outer container 10. The exhaust pipe 50 is provided with, in order from the upstream side, a shutter 51, a radiator 54 for cooling the exhaust gas flowing through the exhaust pipe 50, a shutter 52, and a blower 53 for flowing the exhaust gas from the upstream side to the downstream side of the exhaust pipe 50. It has been. The exhaust pipe 50, the shutter 51, the radiator 54, the shutter 52, and the blower 53 mainly constitute exhaust means for exhausting the atmosphere in the space 10 a between the outer container 10 and the reaction container 5. By opening the shutters 51 and 52 in a state where the blower 53 is operated, outside air (atmosphere) is introduced into the outer container 10 from the vent 15 provided below the side wall of the outer container 10, and the outer container 10. The reaction vessel 5 can be rapidly cooled (air cooled) by flowing outside air from below to above. Further, while the shutters 51 and 52 are closed, the flow rate is adjusted by the mass flow controller 40b, and the open / close valve 30c is opened to introduce the N ₂ gas into the reaction vessel 5 to be filled. 5 is configured to be purged with N ₂ gas. This makes it possible to reduce the oxygen concentration in the space 10a between the outer container 10 and the reaction container 5, and when hydrogen gas leaks into the space 10a between the outer container 10 and the reaction container 5, It is possible to prevent explosion and the like from reacting with hydrogen. The N ₂ gas purged from the space 10 a is configured to be discharged out of the external container 10 through the vent 15.

(Oxygen concentration measuring means and hydrogen concentration measuring means)
At the upper end of the outer container 10, an oxygen concentration meter 61 as an oxygen concentration measuring means for measuring the oxygen concentration in the space 10 a between the outer container 10 and the reaction container 5, and between the outer container 10 and the reaction container 5. A hydrogen concentration meter 62 as a hydrogen concentration measuring means for measuring the hydrogen concentration in the space 10a is provided. In addition, since hydrogen gas is lighter than outside air (atmosphere), nitrogen gas, and oxygen gas, when hydrogen gas leaks in the space 10a between the external container 10 and the reaction vessel 5, the leaked hydrogen gas is in the space 10a. It flows upward. In the present embodiment, since the hydrogen concentration meter 62 is provided at the upper end of the external container 10, hydrogen gas leaked into the space 10a can be reliably detected. Further, since the oxygen concentration meter 61 and the hydrogen concentration meter 62 are arranged away from the gas supply port of the inert gas supply nozzle 12, the oxygen gas near the oxygen concentration meter 61 and the hydrogen gas of the hydrogen concentration meter 62 are nitrogen. It can suppress that it dilutes with gas and can suppress that each density | concentration measured with the oxygen concentration meter 61 or the hydrogen concentration meter 62 falls.

(Temperature measuring means)
A heater thermocouple 11 a is provided in the space between the heater 6 and the outer wall of the reaction vessel 5 as temperature measuring means for measuring the temperature of the space 10 a between the outer vessel 10 and the reaction vessel 5. Further, a cascade thermocouple 11 b for measuring the temperature of the processing chamber 5 a is provided in the space between the inner wall of the reaction vessel 5 and the wafer 1.

(Control means)
The substrate processing apparatus according to this embodiment includes a controller 100 as control means for controlling the operation of each means. The controller 100 includes a temperature control unit 100a, a flow rate control unit 100b, a pressure control unit 100c, and a drive control unit 100d. The temperature controller 100a is connected to the heater thermocouple 11a, the cascade thermocouple 11b, and the heater 6, respectively. Based on the temperature measured by the heater thermocouple 11a and the cascade thermocouple 11b, the temperature controller 100a It is configured to control the temperature. The flow rate control unit 100b is connected to the on-off valves 30c and 40c and the mass flow controllers 30b and 40b, respectively. Supply / stop of hydrogen gas into the reaction vessel 5, supply flow rate, and nitrogen gas into the external vessel 10 are supplied. The supply and the supply flow rate are configured to be controlled at a predetermined timing. The pressure control unit 100c is connected to the pressure sensor 20c, the APC valve 20b, and the vacuum pump 20a. Based on the pressure measured by the pressure sensor 20c, the opening degree of the APC valve 20b and the vacuum pump 20a It is configured to control the operation. The drive control unit 100d is connected to the rotation mechanism 8 and the boat elevator 16, and is configured to control operations of the rotation mechanism 8 and the boat elevator 16 at a predetermined timing.

  The controller 100, after starting the supply of nitrogen gas by the inert gas supply means, causes the hydrogen concentration meter 62, the oxygen concentration meter 61, and the heater thermocouple 11a to perform the measurement, and the hydrogen concentration meter 62, the oxygen concentration The heater 61 is configured to control heating by the heater 6, supply of hydrogen gas by the hydrogen gas supply means, and exhaust by the exhaust means according to at least two measurement results among the measurement results obtained by the heater 61 and the heater thermocouple 11a. ing. Thereby, leakage of hydrogen gas from the reaction vessel 5 into the atmosphere can be suppressed, and safety can be improved. Such control will be described later.

(2) Substrate Processing Step Next, a substrate processing step performed as one step of the semiconductor device manufacturing process will be described with reference mainly to FIGS. In this step, after the supply of hydrogen gas into the reaction vessel 5 into which the wafer 1 has been loaded is started, outside air is introduced into the external vessel 10 while continuing the supply of hydrogen gas into the reaction vessel 5. A case where 5 is rapidly cooled will be described as an example. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 100.

  FIG. 2 is a table showing conditions for starting the supply of hydrogen gas into the reaction vessel 5. FIG. 3 is a table showing the control contents immediately after the supply of hydrogen gas into the reaction vessel 5. FIG. 4 is a table showing start conditions for the rapid cooling process of the reaction vessel 5. FIG. 5 is a table showing the control content immediately after the start of the rapid cooling process of the reaction vessel 5.

(Substrate loading process and pressure adjustment process)
First, a plurality of wafers 1 are loaded into the boat 4 (wafer charge). Next, the boat elevator 16 is operated to raise the boat 4 and carry it into the reaction vessel 5 (inside the processing chamber 5a) (boat loading). At this time, the lower end opening of the reaction vessel 5 is hermetically sealed by the seal cap 9.

  When the loading of the boat 4 into the reaction vessel 5 (inside the processing chamber 5a) is completed, the inside of the processing chamber 5a is evacuated so that the inside of the processing chamber 5a becomes a predetermined pressure. Specifically, the opening degree of the APC valve 20b is adjusted based on the pressure measured by the pressure sensor 20c while exhausting by the vacuum pump 20a.

(Inert gas supply process)
Next, the supply of N ₂ gas by the inert gas supply means is started. Specifically, the shutters 51 and 52 are closed. Then, while adjusting the flow rate by the mass flow controller 40b, the open / close valve 40c is opened, and the nitrogen gas supplied from the inert gas supply source 40a is supplied to the space 10a between the external vessel 10 and the reaction vessel 5, 10a is purged with nitrogen gas. Thereby, the oxygen concentration of the space 10a between the external container 10 and the reaction container 5 is reduced. Note that the N ₂ gas purged in the space 10 a is discharged out of the external container 10 through the vent 15.

(Judgment process before the start of hydrogen gas supply)
Next, the measurement of the oxygen concentration by the oxygen concentration meter 61 and the measurement of the hydrogen concentration by the hydrogen concentration meter 62 are performed, and as shown in FIG. 2, it is determined whether or not to start supplying hydrogen gas into the reaction vessel 5. .

Specifically, the oxygen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is less than a limit concentration (for example, 5.2%, about 50000 ppm, the same applies hereinafter), and the outer vessel 10 and the reaction vessel 5 If the hydrogen concentration in the space 10a is not increased, heating by the heater 6 and supply of hydrogen gas by the hydrogen gas supply means are started while continuing supply of nitrogen gas by the inert gas supply means (Case 1) . Heating by the heater 6 is performed so that the inside of the processing chamber 5a has a predetermined temperature (so that the surface of the wafer 1 has a predetermined processing temperature). Specifically, the temperature of the heater 6 is controlled based on the temperature measured by the heater thermocouple 11a and the cascade thermocouple 11b. In addition, hydrogen gas is supplied by the hydrogen gas supply means after the temperature increase by the heater 6 is completed (after the surface of the wafer 1 reaches a predetermined processing temperature), the flow rate is adjusted by the mass flow controller 30b, and the opening / closing valve 30c is adjusted. Do by opening. When the supply of hydrogen gas by the hydrogen gas supply means is started, the opening degree of the APC valve 20b is adjusted to keep the pressure in the reaction vessel 5 (in the processing chamber 5a) at a predetermined pressure.

  However, if the oxygen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is less than the limit concentration, and the hydrogen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is increased, it is inactive. While supplying the inert gas by the gas supply means, the supply of hydrogen gas by the hydrogen gas supply means and the heating by the heater 6 are prohibited (Case 2). At this time, the temperature of the heater 6 is set so that the temperature measured by the heater thermocouple 11a is equal to or lower than the hydrogen explosion limit temperature (for example, 527 ° C., and so on). In order to prevent the heater 6 from operating unintentionally, it is preferable to shut off the breaker of the power supply device connected to the heater 6.

  In addition, if the oxygen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is equal to or higher than the limit concentration, and the hydrogen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is not increased, it is inactive. While the supply of the inert gas by the gas supply means is continued, the start of the supply of hydrogen gas by the hydrogen gas supply means is prohibited (Case 3).

  In addition, if the oxygen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is equal to or higher than the limit concentration, and the hydrogen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is increased, it is inactive. While the supply of the inert gas by the gas supply means is continued, the heating by the heater 6 and the supply of hydrogen gas by the hydrogen gas supply means are prohibited (Case 4). At this time, it is preferable to shut off the breaker of the power supply device connected to the heater 6 in order to prevent the heater 6 from operating unintentionally.

  In this step, even if an abnormality occurs in the hydrogen concentration meter 62 and the hydrogen concentration in the space 10a between the external container 10 and the reaction container 5 cannot be measured correctly, the external container 10 and the reaction container 5 Since the purging with the nitrogen gas in the space 10a between is continued, the low oxygen concentration state of the space 10a between the outer vessel 10 and the reaction vessel 5 can be ensured (Cases 2 to 4). If the oxygen concentration in the space 10a between the external vessel 10 and the reaction vessel 5 is not less than the limit concentration, the supply of hydrogen gas by the hydrogen gas supply means is not started (Case 3 and 4), and further the heater 6 The heating by is prohibited (Case 4). As a result, explosion due to leakage of hydrogen gas from the reaction vessel 5 can be effectively avoided.

  Further, in this process, even if an abnormality occurs in the oxygen concentration meter 61 and the oxygen concentration in the space 10a between the external container 10 and the reaction container 5 cannot be measured correctly, the reaction with the external container 10 occurs. Since the purge with the nitrogen gas in the space 10a between the container 5 is continued, the low oxygen concentration state of the space 10a between the external container 10 and the reaction container 5 can be ensured (Cases 2 to 4). When the hydrogen concentration in the space 10a between the external container 10 and the reaction container 5 is increased, supply of hydrogen gas by the hydrogen gas supply means is not started (Case 2 and 4), and further the heater 6 is prohibited (Case 4). As a result, explosion due to leakage of hydrogen gas from the reaction vessel 5 can be effectively avoided.

(Judgment process immediately after the start of hydrogen gas supply)
Immediately after the supply of hydrogen gas by the hydrogen gas supply means is started, measurement of the oxygen concentration by the oxygen concentration meter 61 and measurement of the hydrogen concentration by the hydrogen concentration meter 62 are carried out. As shown in FIG. Judge whether to continue supplying hydrogen gas to

  Specifically, the oxygen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is less than the limit concentration, and the hydrogen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is not increased. (In other words, if no hydrogen gas leaks), the supply of the inert gas by the inert gas supply means, the heating by the heater 6, and the supply of hydrogen gas by the hydrogen gas supply means are continued (Case 5).

  However, if the oxygen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is less than the limit concentration, and the hydrogen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is increased, it is inactive. While continuing the supply of the inert gas by the gas supply means, the supply of the hydrogen gas by the hydrogen gas supply means is stopped and the exhaust by the exhaust means is prohibited (Case 6). The prohibition of exhaust by the exhaust means is performed by prohibiting the opening operation of the shutters 51 and 52. The supply of hydrogen gas by the hydrogen gas supply means is stopped by closing the open / close valve 30c.

  In addition, if the oxygen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is equal to or higher than the limit concentration, and the hydrogen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is not increased, it is inactive. The supply start of hydrogen gas by the hydrogen gas supply means is stopped while continuing the supply of the inert gas by the gas supply means (Case 7).

  In addition, if the oxygen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is equal to or higher than the limit concentration, and the hydrogen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is increased, it is inactive. While the supply of the inert gas by the gas supply means is continued, the supply of the hydrogen gas by the hydrogen gas supply means and the heating by the heater 6 are stopped and the exhaust by the exhaust means is prohibited (Case 8). When stopping heating by the heater 6, it is preferable to shut off the breaker of the power supply device connected to the heater 6 in order to prevent the heater 6 from operating unintentionally.

  In this step, even if an abnormality occurs in the hydrogen concentration meter 62 and the hydrogen concentration in the space 10a between the external container 10 and the reaction container 5 cannot be measured correctly, the external container 10 and the reaction container 5 Since the purging with the nitrogen gas in the space 10a between is continued, the low oxygen concentration state of the space 10a between the outer vessel 10 and the reaction vessel 5 can be secured (Case 5 to 8). If the oxygen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is not less than the limit concentration, the supply of hydrogen gas by the hydrogen gas supply means is stopped (Case 7, 8), and further the heater 6 Is stopped and exhaust by the exhaust means is prohibited (Case 8). As a result, explosion due to leakage of hydrogen gas from the reaction vessel 5 can be effectively avoided.

  Further, in this process, even if an abnormality occurs in the oxygen concentration meter 61 and the oxygen concentration in the space 10a between the external container 10 and the reaction container 5 cannot be measured correctly, the reaction with the external container 10 occurs. Since the purge with the nitrogen gas in the space 10a between the container 5 is continued, the low oxygen concentration state of the space 10a between the external container 10 and the reaction container 5 can be ensured (Cases 2 to 4). When the hydrogen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is increased, the supply of hydrogen gas by the hydrogen gas supply means is stopped (Case 7, 8), and further the heater 6 is stopped and exhaust by the exhaust means is prohibited (Case 8). As a result, explosion due to leakage of hydrogen gas from the reaction vessel 5 can be effectively avoided.

(Judgment process for the start of rapid cooling)
After the supply of hydrogen gas by the hydrogen gas supply means is started, measurement of the oxygen concentration by the oxygen concentration meter 61, measurement of the hydrogen concentration by the hydrogen concentration meter 62, and between the external container 10 and the reaction container 5 by the heater thermocouple 11a The temperature of the space 10a is measured, and as shown in FIG. 4, it is determined whether or not the rapid cooling process is started.

  Specifically, the oxygen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is less than the limit concentration, and the hydrogen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 has not increased. If the temperature of the space 10a between the external vessel 10 and the reaction vessel 5 is lower than the limit temperature, the heating by the heater 6 is stopped while the supply of the hydrogen gas by the hydrogen gas supply unit is continued, and the exhaust unit is used. Exhaust is started and air (outside air) is introduced into the outer container 10 (Case 9). Exhaust by the exhaust means is performed by opening the shutters 51 and 52 while the blower 53 is operated. As a result, outside air (atmosphere) is introduced into the outer container 10 from the vent 15 provided below the side wall of the outer container 10, the outside air is circulated from the lower side to the upper side of the outer container 10, and the reaction container 5 is rapidly cooled. (Air cooling).

  However, the oxygen concentration in the space 10a between the external vessel 10 and the reaction vessel 5 is less than the limit concentration, and the hydrogen concentration in the space 10a between the external vessel 10 and the reaction vessel 5 has not increased, and the external vessel If the temperature of the space 10a between the reactor 10 and the reaction vessel 5 is equal to or higher than the limit temperature, heating by the heater 6 is stopped while the supply of hydrogen gas by the hydrogen gas supply means is continued (the output to the heater 6 is zero). In addition, the exhaust by the exhaust means is prohibited (Case 10). In Case 10, by stopping the heating by the heater 6, when the temperature of the space 10a becomes equal to or lower than the limit temperature, the Case 10 is moved to, the atmosphere is introduced into the space 10a, and the reaction vessel 5 starts to be rapidly cooled. To do.

  If the oxygen concentration in the space 10a between the outer container 10 and the reaction vessel 5 is less than the limit concentration, and the hydrogen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is increased, the outer container Regardless of the temperature of the space 10a between 10 and the reaction vessel 5, the supply of hydrogen gas by the hydrogen gas supply means is stopped and the exhaust by the exhaust means is prohibited (Case 11, 12).

  If the oxygen concentration in the space 10a between the outer container 10 and the reaction vessel 5 is not less than the limit concentration, and the hydrogen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is not increased, the outer container Regardless of the temperature of the space 10a between 10 and the reaction vessel 5, the supply of hydrogen gas by the hydrogen gas supply means is stopped and the exhaust by the exhaust means is prohibited (Cases 13, 14).

  If the oxygen concentration in the space 10a between the external container 10 and the reaction vessel 5 is not less than the limit concentration, and the hydrogen concentration in the space 10a between the external vessel 10 and the reaction vessel 5 is increased, the external container Irrespective of the temperature of the space 10a between 10 and the reaction vessel 5, the supply of hydrogen gas by the hydrogen gas supply means and the heating by the heater 6 are stopped and the exhaust by the exhaust means is prohibited (Cases 15 and 16). At this time, it is preferable to shut off the breaker of the power supply device connected to the heater 6 in order to prevent the heater 6 from operating unintentionally.

In this step, even if an abnormality occurs in the hydrogen concentration meter 62 and the hydrogen concentration in the space 10a between the external container 10 and the reaction container 5 cannot be measured correctly, the external container 10 and the reaction container 5 Since the purging with the nitrogen gas in the space 10a is continued, the low oxygen concentration state of the space 10a between the outer vessel 10 and the reaction vessel 5 can be ensured (Cases 10 to 16). Further, if the oxygen concentration in the space 10a between the external container 10 and the reaction container 5 is equal to or higher than the limit concentration, exhaust by the exhaust means is prohibited (Case 13 to 16), or further, exhaust by the exhaust means is prohibited. (Case 15, 16). Further, if the temperature of the space 10a between the external container 10 and the reaction container 5 is equal to or higher than the limit temperature, the exhaust by the exhaust means is prohibited (Case 10, 12, 14, 16), or the exhaust by the exhaust means is performed. It is prohibited (Case 10, 16). As a result, explosion due to leakage of hydrogen gas from the reaction vessel 5 can be effectively avoided.

  Further, in this process, even if an abnormality occurs in the oxygen concentration meter 61 and the hydrogen concentration in the space 10a between the outer container 10 and the reaction container 5 cannot be measured correctly, the reaction with the outer container 10 occurs. Since the purging with the nitrogen gas in the space 10a between the container 5 is continued, the low oxygen concentration state of the space 10a between the external container 10 and the reaction container 5 can be secured (Cases 10 to 16). Further, if the hydrogen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is increased, the exhaust by the exhaust means is prohibited (Case 11, 12, 15, 16), or the exhaust by the exhaust means is further prohibited. It is prohibited (Case 15, 16). Further, if the temperature of the space 10a between the external container 10 and the reaction container 5 is equal to or higher than the limit temperature, the exhaust by the exhaust means is prohibited (Case 10, 12, 14, 16), or the exhaust by the exhaust means is performed. It is prohibited (Case 10, 16). As a result, explosion due to leakage of hydrogen gas from the reaction vessel 5 can be effectively avoided.

  Further, in this step, even if the heater thermocouple 11a becomes abnormal and the temperature of the space 10a between the outer container 10 and the reaction container 5 cannot be measured correctly, the outer container 10 and the reaction container Since the purging with the nitrogen gas in the space 10a between 5 and 5 is continued, the low oxygen concentration state of the space 10a between the external vessel 10 and the reaction vessel 5 can be secured (Case 10 to 16). Further, if the oxygen concentration in the space 10a between the external container 10 and the reaction container 5 is equal to or higher than the limit concentration, exhaust by the exhaust means is prohibited (Case 13 to 16), or further, exhaust by the exhaust means is prohibited. (Case 15, 16). Further, if the hydrogen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is increased, the exhaust by the exhaust means is prohibited (Case 11, 12, 15, 16), or the exhaust by the exhaust means is further prohibited. It is prohibited (Case 15, 16). As a result, explosion due to leakage of hydrogen gas from the reaction vessel 5 can be effectively avoided.

(Judgment process immediately after the start of the rapid cooling process)
Immediately after the exhaust by the exhaust means is started (immediately after the rapid cooling of the reaction vessel 5 is started), it is determined whether or not the rapid cooling process should be continued. In addition, since the outside air containing oxygen flows into the space 10a between the external container 10 and the reaction container 5 after the rapid cooling process (exhaust by the exhaust means) is started, the determination using the oxygen concentration meter 61 (oxygen concentration) It is difficult to determine whether or not is less than the limit concentration. On the other hand, in the present embodiment, the quenching treatment is performed by measuring the hydrogen concentration by the hydrogen concentration meter 62 and measuring the temperature of the space 10a between the outer vessel 10 and the reaction vessel 5 by the heater thermocouple 11a. It is possible to accurately determine whether or not to continue. This is shown in FIG.

  Specifically, if the hydrogen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is not increased and the temperature of the space 10a between the outer vessel 10 and the reaction vessel 5 is less than the limit temperature In a state where heating by the heater 6 is stopped (a state where power supply to the heater 6 is zero), supply of hydrogen gas by the hydrogen gas supply means and exhaust by the exhaust means (that is, outside air into the external container 10) Introduction) is continued (Case 17).

However, if the hydrogen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is not increased and the temperature of the space 10a between the outer vessel 10 and the reaction vessel 5 is equal to or higher than the limit temperature, hydrogen gas While the supply of hydrogen gas by the supply means is continued, the heating by the heater 6 is stopped (the power supply to the heater 6 is zero), and the exhaust by the exhaust means (that is, the external container 10).
(Introduction of outside air into the inside) is stopped (Case 18).

  If the hydrogen concentration in the space 10a between the outer container 10 and the reaction container 5 is increased and the space 10a between the outer container 10 and the reaction container 5 is lower than the limit temperature, the hydrogen gas supply means Supply of hydrogen gas and exhaust by the exhaust means (that is, introduction of outside air into the external container 10) are stopped (Case 19).

  If the hydrogen concentration in the space 10a between the outer container 10 and the reaction container 5 is increased and the temperature of the space 10a between the outer container 10 and the reaction container 5 is equal to or higher than the limit temperature, the heater 6 With the heating stopped, the supply of hydrogen gas by the hydrogen gas supply means and the exhaust by the exhaust means (that is, introduction of outside air into the external container 10) are stopped (Case 20). At this time, it is preferable to shut off the breaker of the power supply device connected to the heater 6 in order to prevent the heater 6 from operating unintentionally.

  In this step, even if an abnormality occurs in the hydrogen concentration meter 62 and the hydrogen concentration in the space 10a between the external container 10 and the reaction container 5 cannot be measured correctly, the external container 10 and the reaction container 5 Since the purging with the nitrogen gas in the space 10a between is continued, the low oxygen concentration state of the space 10a between the outer vessel 10 and the reaction vessel 5 can be secured (Cases 17 to 20). If the temperature of the space 10a between the external container 10 and the reaction container 5 is equal to or higher than the limit temperature, supply of hydrogen gas by the hydrogen gas supply means, exhaust by the exhaust means, and heating by the heater 6 are stopped. (Cases 18 and 20) By these, explosion due to leakage of hydrogen gas from the reaction vessel 5 can be effectively avoided.

  Further, in this step, even if the heater thermocouple 11a becomes abnormal and the temperature of the space 10a between the outer container 10 and the reaction container 5 cannot be measured correctly, the outer container 10 and the reaction container Since the purging with the nitrogen gas in the space 10a between 5 and 5 is continued, the low oxygen concentration state of the space 10a between the external vessel 10 and the reaction vessel 5 can be secured (Cases 17 to 20). If the hydrogen concentration in the space 10a between the external vessel 10 and the reaction vessel 5 is increased, the supply of hydrogen gas by the hydrogen gas supply means is stopped and the exhaust by the exhaust means is stopped (Cases 19, 20). In addition, heating by the heater 6 is stopped (Case 20). As a result, explosion due to leakage of hydrogen gas from the reaction vessel 5 can be effectively avoided.

(Atmospheric pressure return process and substrate carry-out process)
When the cooling of the reaction vessel 5 is completed, the hydrogen gas remaining in the reaction vessel 5 is discharged, and an inert gas is supplied into the reaction vessel 5 by an inert gas supply means (not shown). Return the pressure to atmospheric pressure. Then, the boat elevator 16 is lowered to carry out the processed wafer 1 from the processing chamber 5a, and the substrate processing step according to the present embodiment is completed.

(3) Effects according to the present embodiment According to the present embodiment, the following one or more effects are achieved.

(A) The reaction vessel 5 according to this embodiment is configured as a single tube. Therefore, high responsiveness can be ensured without deteriorating responsiveness of temperature control (temperature control of the wafer 1) in the reaction vessel 5 by the heater 6. In the conventional substrate processing apparatus, leakage of hydrogen gas from the reaction container to the atmosphere is suppressed by a double structure of the reaction container and the soaking tube. Then, the inside of the reaction vessel is heated by heat conduction through the soaking tube and the reaction vessel from a heater provided so as to surround the outer periphery of the soaking tube. Heating by heat conduction has a slow moving speed, and thus the responsiveness of temperature control may be reduced.

  FIG. 6 is a graph showing the temperature control responsiveness when the reaction vessel is configured as a single tube (Example). FIG. 7 is a graph showing the responsiveness of temperature control according to a case (comparative example) in which leakage of hydrogen gas from the reaction vessel to the atmosphere is suppressed by the double structure of the reaction vessel and the soaking tube. . 6 and 7, the vertical axis represents temperature (° C.) and the horizontal axis represents time (minutes). In FIG. 6 (Example), it can be seen that the measured temperature change of the heater thermocouple accompanying the power supplied to the heater and the measured temperature change of the cascade thermocouple substantially coincide. Moreover, in FIG. 7 (comparative example), it can be seen that the measured temperature change of the cascade thermocouple is delayed compared to the measured temperature change of the heater thermocouple accompanying the power supplied to the heater. That is, when the reaction vessel is configured as a single tube (Example) compared to the case where the double structure of the reaction vessel and the soaking tube suppresses the leakage of hydrogen gas from the reaction vessel to the atmosphere (Comparative Example). It can be seen that the higher responsiveness can be secured without lowering the responsiveness of the temperature control (wafer temperature control) in the reaction vessel by the heater. In particular, it can be seen that a decrease in temperature control responsiveness can be suppressed in a low temperature region.

(B) In the determination step before the start of hydrogen gas supply according to this embodiment, as shown in FIG. 2, if an abnormality occurs in the hydrogen concentration meter 62, the hydrogen in the space 10 a between the external vessel 10 and the reaction vessel 5 is Even when the concentration cannot be measured correctly, the space 10a between the external vessel 10 and the reaction vessel 5 is continuously purged with nitrogen gas, so that the space between the external vessel 10 and the reaction vessel 5 is maintained. A low oxygen concentration state of 10a can be secured (Cases 2 to 4). If the oxygen concentration in the space 10a between the external vessel 10 and the reaction vessel 5 is not less than the limit concentration, the supply of hydrogen gas by the hydrogen gas supply means is not started (Case 3 and 4), and further the heater 6 The heating by is prohibited (Case 4). As a result, even if an abnormality occurs in the hydrogen concentration meter 62, an explosion due to leakage of hydrogen gas from the reaction vessel 5 can be effectively avoided.

  Further, in this process, even if an abnormality occurs in the oxygen concentration meter 61 and the oxygen concentration in the space 10a between the external container 10 and the reaction container 5 cannot be measured correctly, the reaction with the external container 10 occurs. Since the purge with the nitrogen gas in the space 10a between the container 5 is continued, the low oxygen concentration state of the space 10a between the external container 10 and the reaction container 5 can be ensured (Cases 2 to 4). When the hydrogen concentration in the space 10a between the external container 10 and the reaction container 5 is increased, supply of hydrogen gas by the hydrogen gas supply means is not started (Case 2 and 4), and further the heater 6 is prohibited (Case 4). As a result, even if an abnormality occurs in the oxygen concentration meter 61, an explosion due to leakage of hydrogen gas from the reaction vessel 5 can be effectively avoided.

(C) In the determination step immediately after the start of hydrogen gas supply according to the present embodiment, as shown in FIG. 3, an abnormality occurs in the hydrogen concentration meter 62, and the hydrogen in the space 10 a between the external vessel 10 and the reaction vessel 5. Even when the concentration cannot be measured correctly, the space 10a between the external vessel 10 and the reaction vessel 5 is continuously purged with nitrogen gas, so that the space between the external vessel 10 and the reaction vessel 5 is maintained. A low oxygen concentration state of 10a can be secured (Case 5 to 8). If the oxygen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is not less than the limit concentration, the supply of hydrogen gas by the hydrogen gas supply means is stopped (Case 7, 8), and further the heater 6 Is stopped and exhaust by the exhaust means is prohibited (Case 8). As a result, even if an abnormality occurs in the hydrogen concentration meter 62, an explosion due to leakage of hydrogen gas from the reaction vessel 5 can be effectively avoided.

Further, in this process, even if an abnormality occurs in the oxygen concentration meter 61 and the oxygen concentration in the space 10a between the external container 10 and the reaction container 5 cannot be measured correctly, the reaction with the external container 10 occurs. Since the purge with the nitrogen gas in the space 10a between the container 5 is continued, the low oxygen concentration state of the space 10a between the external container 10 and the reaction container 5 can be ensured (Cases 2 to 4). When the hydrogen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is increased, the supply of hydrogen gas by the hydrogen gas supply means is stopped (Case 7, 8), and further the heater 6 is stopped and exhaust by the exhaust means is prohibited (Case 8). As a result, even if an abnormality occurs in the oxygen concentration meter 61, an explosion due to leakage of hydrogen gas from the reaction vessel 5 can be effectively avoided.

(D) In the determination process of whether or not to start the rapid cooling process according to the present embodiment, as shown in FIG. 4, an abnormality occurs in the hydrogen concentration meter 62, and the hydrogen in the space 10 a between the external container 10 and the reaction container 5 Even when the concentration cannot be measured correctly, the space 10a between the external vessel 10 and the reaction vessel 5 is continuously purged with nitrogen gas, so that the space between the external vessel 10 and the reaction vessel 5 is maintained. A low oxygen concentration state of 10a can be secured (Case 10 to 16). Further, if the oxygen concentration in the space 10a between the external container 10 and the reaction container 5 is equal to or higher than the limit concentration, exhaust by the exhaust means is prohibited (Case 13 to 16), or further, exhaust by the exhaust means is prohibited. (Case 15, 16). Further, if the temperature of the space 10a between the external container 10 and the reaction container 5 is equal to or higher than the limit temperature, the exhaust by the exhaust means is prohibited (Case 10, 12, 14, 16), or the exhaust by the exhaust means is performed. It is prohibited (Case 10, 16). As a result, even if an abnormality occurs in the hydrogen concentration meter 62, an explosion due to leakage of hydrogen gas from the reaction vessel 5 can be effectively avoided.

  Further, in this process, even if an abnormality occurs in the oxygen concentration meter 61 and the hydrogen concentration in the space 10a between the outer container 10 and the reaction container 5 cannot be measured correctly, the reaction with the outer container 10 occurs. Since the purging with the nitrogen gas in the space 10a between the container 5 is continued, the low oxygen concentration state of the space 10a between the external container 10 and the reaction container 5 can be secured (Cases 10 to 16). Further, if the hydrogen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is increased, the exhaust by the exhaust means is prohibited (Case 11, 12, 15, 16), or the exhaust by the exhaust means is further prohibited. It is prohibited (Case 15, 16). Further, if the temperature of the space 10a between the external container 10 and the reaction container 5 is equal to or higher than the limit temperature, the exhaust by the exhaust means is prohibited (Case 10, 12, 14, 16), or the exhaust by the exhaust means is performed. It is prohibited (Case 10, 16). As a result, even if an abnormality occurs in the oxygen concentration meter 61, an explosion due to leakage of hydrogen gas from the reaction vessel 5 can be effectively avoided.

  Further, in this step, even if the heater thermocouple 11a becomes abnormal and the temperature of the space 10a between the outer container 10 and the reaction container 5 cannot be measured correctly, the outer container 10 and the reaction container Since the purging with the nitrogen gas in the space 10a between 5 and 5 is continued, the low oxygen concentration state of the space 10a between the external vessel 10 and the reaction vessel 5 can be secured (Case 10 to 16). Further, if the oxygen concentration in the space 10a between the external container 10 and the reaction container 5 is equal to or higher than the limit concentration, exhaust by the exhaust means is prohibited (Case 13 to 16), or further, exhaust by the exhaust means is prohibited. (Case 15, 16). Further, if the hydrogen concentration in the space 10a between the outer vessel 10 and the reaction vessel 5 is increased, the exhaust by the exhaust means is prohibited (Case 11, 12, 15, 16), or the exhaust by the exhaust means is further prohibited. It is prohibited (Case 15, 16). As a result, even if an abnormality occurs in the heater thermocouple 11a, explosion due to leakage of hydrogen gas from the reaction vessel 5 can be effectively avoided.

(E) Since the outside air containing oxygen flows into the space 10a between the external container 10 and the reaction container 5 after the rapid cooling process (exhaust by the exhaust means) is started, the determination using the oxygen concentration meter 61 (oxygen) It is difficult to determine whether the concentration is less than the limit concentration. On the other hand, in the present embodiment, the quenching treatment is performed by measuring the hydrogen concentration by the hydrogen concentration meter 62 and measuring the temperature of the space 10a between the outer vessel 10 and the reaction vessel 5 by the heater thermocouple 11a. It is possible to accurately determine whether or not to continue.

(F) In the determination step immediately after the start of the rapid cooling process according to the present embodiment, as shown in FIG. 4, an abnormality occurs in the hydrogen concentration meter 62, and the hydrogen in the space 10 a between the external container 10 and the reaction container 5. Even when the concentration cannot be measured correctly, the space 10a between the external vessel 10 and the reaction vessel 5 is continuously purged with nitrogen gas, so that the space between the external vessel 10 and the reaction vessel 5 is maintained. A low oxygen concentration state of 10a can be secured (Cases 17 to 20). If the temperature of the space 10a between the external container 10 and the reaction container 5 is equal to or higher than the limit temperature, supply of hydrogen gas by the hydrogen gas supply means, exhaust by the exhaust means, and heating by the heater 6 are stopped. Therefore, even if an abnormality occurs in the hydrogen concentration meter 62, explosion due to leakage of hydrogen gas from the reaction vessel 5 can be effectively avoided.

  Further, in this step, even if the heater thermocouple 11a becomes abnormal and the temperature of the space 10a between the outer container 10 and the reaction container 5 cannot be measured correctly, the outer container 10 and the reaction container Since the purging with the nitrogen gas in the space 10a between 5 and 5 is continued, the low oxygen concentration state of the space 10a between the external vessel 10 and the reaction vessel 5 can be secured (Cases 17 to 20). If the hydrogen concentration in the space 10a between the external vessel 10 and the reaction vessel 5 is increased, the supply of hydrogen gas by the hydrogen gas supply means is stopped and the exhaust by the exhaust means is stopped (Cases 19, 20). In addition, heating by the heater 6 is stopped (Case 20). As a result, even if an abnormality occurs in the heater thermocouple 11a, explosion due to leakage of hydrogen gas from the reaction vessel 5 can be effectively avoided.

(G) Since hydrogen gas is lighter than the outside air (atmosphere), nitrogen gas, and oxygen gas, when hydrogen gas leaks into the space 10a between the outer vessel 10 and the reaction vessel 5, the leaked hydrogen gas becomes space 10a. It flows upward inside. In the present embodiment, since the hydrogen concentration meter 62 is provided at the upper end of the external container 10, hydrogen gas leaked into the space 10a can be reliably detected.

(H) In the present embodiment, since the oxygen concentration meter 61 and the hydrogen concentration meter 62 are arranged apart from the gas supply port of the inert gas supply nozzle 12, the oxygen gas and hydrogen concentration in the vicinity of the oxygen concentration meter 61 are disposed. It can suppress that the hydrogen gas of the total 62 is diluted with nitrogen gas, and can suppress that each density | concentration measured with the oxygen concentration meter 61 or the hydrogen concentration meter 62 falls.

<Still another embodiment of the present invention>
As mentioned above, although embodiment of this invention was described concretely, this invention is not limited to the above-mentioned embodiment, It can change variously in the range which does not deviate from the summary.

<Preferred embodiment of the present invention>
Hereinafter, preferred embodiments of the present invention will be additionally described.

According to one aspect of the invention,
A reaction vessel containing a substrate;
Hydrogen gas supply means for supplying hydrogen gas into the reaction vessel;
A heating means provided outside the reaction vessel and for heating the substrate through the reaction vessel;
An external container for housing the reaction container and the heating means;
An inert gas supply means for supplying an inert gas to a space between the external container and the reaction container;
A vent for communicating inside and outside of the external container;
Exhaust means for exhausting the atmosphere of the space between the external container and the reaction container;
Oxygen concentration measuring means for measuring the oxygen concentration in the space between the external vessel and the reaction vessel;
A hydrogen concentration measuring means for measuring a hydrogen concentration in a space between the external container and the reaction container;
Temperature measuring means for measuring the temperature of the space between the external container and the reaction container;
Control means for controlling the operation of each means,
The control means includes
After the supply of the inert gas by the inert gas supply means is started, the measurement by the hydrogen concentration measurement means, the oxygen concentration measurement means, and the temperature measurement means is performed,
According to at least two measurement results among the measurement results by the hydrogen concentration measurement unit, the oxygen concentration measurement unit, and the temperature measurement unit, heating by the heating unit, supply of hydrogen gas by the hydrogen gas supply unit, and There is provided a substrate processing apparatus for controlling exhaust by an exhaust means.

According to another aspect of the invention,
A reaction vessel containing a substrate;
Hydrogen gas supply means for supplying hydrogen gas into the reaction vessel;
A heating means provided outside the reaction vessel and for heating the substrate through the reaction vessel;
An external container for housing the reaction container and the heating means;
An inert gas supply means for supplying an inert gas to a space between the external container and the reaction container;
A vent for communicating inside and outside of the external container;
Exhaust means for exhausting the atmosphere of the space between the external container and the reaction container;
Oxygen concentration measuring means for measuring the oxygen concentration in the space between the external vessel and the reaction vessel;
A hydrogen concentration measuring means for measuring a hydrogen concentration in a space between the external container and the reaction container;
Temperature measuring means for measuring the temperature of the space between the external container and the reaction container;
A semiconductor device manufacturing method implemented by a substrate processing apparatus comprising: control means for controlling the operation of each means;
The control means is
Starting the supply of inert gas by the inert gas supply means;
A step of performing measurement by the hydrogen concentration measuring means, the oxygen concentration measuring means, and the temperature measuring means;
According to at least two measurement results among the measurement results by the hydrogen concentration measurement unit, the oxygen concentration measurement unit, and the temperature measurement unit, heating by the heating unit, supply of hydrogen gas by the hydrogen gas supply unit, and And a method of manufacturing a semiconductor device.

Preferably,
The exhaust pipe is provided on the upper end side of the outer container.

Also preferably,
The inert gas supply means supplies an inert gas from the lower end side of the outer container between the reaction container and the heating means.

  Preferably, the vent is provided on the lower end side of the outer container.

Also preferably,
The temperature detection means is provided between the reaction vessel and the heating means.

Also preferably,
The control means includes
After starting the supply of the inert gas by the inert gas supply means, the measurement by the oxygen concentration measurement means and the hydrogen concentration measurement means is carried out,
If the oxygen concentration in the space between the outer vessel and the reaction vessel is less than the limit concentration and the hydrogen concentration in the space between the outer vessel and the reaction vessel has not increased, the inert gas supply means While continuing the supply of the inert gas by the heating means and the supply of hydrogen gas by the hydrogen gas supply means,
If the oxygen concentration in the space between the outer vessel and the reaction vessel is less than the limit concentration, and the hydrogen concentration in the space between the outer vessel and the reaction vessel is increased, the inert gas supply means Inhibiting the supply of hydrogen gas by the hydrogen gas supply means and the heating by the heating means while continuing the supply of inert gas by
If the oxygen concentration in the space between the external vessel and the reaction vessel is not less than the limit concentration and the hydrogen concentration in the space between the external vessel and the reaction vessel is not increased, the inert gas supply means Prohibiting the start of hydrogen gas supply by the hydrogen gas supply means while continuing the supply of inert gas by
If the oxygen concentration in the space between the outer vessel and the reaction vessel is not less than the limit concentration, and the hydrogen concentration in the space between the outer vessel and the reaction vessel is increased, the inert gas supply means While the supply of the inert gas is continued, the heating by the heating means and the supply of hydrogen gas by the hydrogen gas supply means are prohibited.

Also preferably,
The control means includes
After the supply of hydrogen gas by the hydrogen gas supply means is started, the measurement by the oxygen concentration measurement means and the hydrogen concentration measurement means is performed,
If the oxygen concentration in the space between the outer vessel and the reaction vessel is less than the limit concentration and the hydrogen concentration in the space between the outer vessel and the reaction vessel has not increased, the inert gas supply means The supply of the inert gas by the heating, the heating by the heating means, and the supply of hydrogen gas by the hydrogen gas supply means,
If the oxygen concentration in the space between the outer vessel and the reaction vessel is less than the limit concentration, and the hydrogen concentration in the space between the outer vessel and the reaction vessel is increased, the inert gas supply means While stopping the supply of inert gas by the hydrogen gas supply means to stop the supply of hydrogen gas and prohibit the exhaust by the exhaust means,
If the oxygen concentration in the space between the external vessel and the reaction vessel is not less than the limit concentration and the hydrogen concentration in the space between the external vessel and the reaction vessel is not increased, the inert gas supply means While stopping the supply of the inert gas according to, stop the supply of hydrogen gas by the hydrogen gas supply means,
If the oxygen concentration in the space between the external vessel and the reaction vessel is not less than the limit concentration, and the hydrogen concentration in the space between the external vessel and the reaction vessel is increased, the inert gas supply means While the supply of the inert gas is continued, the supply of the hydrogen gas by the hydrogen gas supply means and the heating by the heating means are stopped and the exhaust by the exhaust means is prohibited.

Also preferably,
The control means includes
After the supply of hydrogen gas by the hydrogen gas supply means is started, the measurement by the oxygen concentration measurement means, the hydrogen concentration measurement means, and the temperature measurement means is performed,
The oxygen concentration in the space between the external vessel and the reaction vessel is less than the limit concentration, the hydrogen concentration in the space between the external vessel and the reaction vessel has not increased, and the reaction between the external vessel and the reaction If the temperature of the space between the container and the container is less than the limit temperature, the heating by the heating unit is stopped while the supply of the hydrogen gas by the hydrogen gas supply unit is continued, and the exhaust by the exhaust unit is started. Introducing air into the outer container;
The oxygen concentration in the space between the external vessel and the reaction vessel is less than the limit concentration, the hydrogen concentration in the space between the external vessel and the reaction vessel has not increased, and the reaction between the external vessel and the reaction If the temperature of the space between the container is equal to or higher than the limit temperature, while continuing the supply of hydrogen gas by the hydrogen gas supply means, while stopping the heating by the heating means, prohibiting the exhaust by the exhaust means,
If the oxygen concentration in the space between the external vessel and the reaction vessel is less than the limit concentration, and the hydrogen concentration in the space between the external vessel and the reaction vessel is increased, the external vessel and the reaction Regardless of the temperature of the space between the container, the supply of hydrogen gas by the hydrogen gas supply means is stopped, and the exhaust by the exhaust means is prohibited,
If the oxygen concentration in the space between the external vessel and the reaction vessel is not less than the limit concentration, and the hydrogen concentration in the space between the external vessel and the reaction vessel has not increased, the reaction between the external vessel and the reaction Regardless of the temperature of the space between the container, the supply of hydrogen gas by the hydrogen gas supply means is stopped, and the exhaust by the exhaust means is prohibited,
If the oxygen concentration in the space between the external container and the reaction container is equal to or higher than the limit concentration and the hydrogen concentration in the space between the external container and the reaction container is increased, the reaction between the external container and the reaction is performed. Regardless of the temperature of the space between the containers, the supply of hydrogen gas by the hydrogen gas supply means and the heating by the heating means are stopped, and the exhaust by the exhaust means is prohibited.

Also preferably,
The control means, after starting the exhaust by the exhaust means, to perform the measurement by the hydrogen concentration measurement means and the temperature measurement means,
If the hydrogen concentration in the space between the external container and the reaction container is not increased and the temperature of the space between the external container and the reaction container is less than the limit temperature, heating by the heating means is performed. In a stopped state, the supply of hydrogen gas by the hydrogen gas supply means and the exhaust by the exhaust means are continued,
If the hydrogen concentration in the space between the external container and the reaction container is not increased and the temperature of the space between the external container and the reaction container is equal to or higher than the limit temperature, the hydrogen gas supply means While continuing the supply of hydrogen gas, the exhaust by the exhaust means is stopped in a state where the heating by the heating means is stopped,
If the hydrogen concentration in the space between the external container and the reaction container is increased, and the temperature of the space between the external container and the reaction container is less than the limit temperature, the hydrogen by the hydrogen gas supply means Stop supply of gas and exhaust by the exhaust means,
If the hydrogen concentration in the space between the outer container and the reaction container is increased and the temperature of the space between the outer container and the reaction container is equal to or higher than the limit temperature, heating by the heating means is stopped. In this state, the supply of hydrogen gas by the hydrogen gas supply means and the exhaust by the exhaust means are stopped.

1 Wafer (substrate)
5 Reaction vessel 6 Heater (heating means)
DESCRIPTION OF SYMBOLS 10 External container 10a Space between external container and reaction container 11a Heater thermocouple (temperature measuring means)
11b Cascade thermocouple 15 Ventilation hole 61 Oxygen concentration meter (oxygen measuring means)
62 Hydrogen concentration meter (hydrogen measuring means)
100 controller (control means)

Claims (2)

A reaction vessel containing a substrate;
Hydrogen gas supply means for supplying hydrogen gas into the reaction vessel;
A heating means provided outside the reaction vessel and for heating the substrate through the reaction vessel;
An external container for housing the reaction container and the heating means;
An inert gas supply means for supplying an inert gas to a space between the external container and the reaction container;
A vent for communicating inside and outside of the external container;
Exhaust means for exhausting the atmosphere of the space between the external container and the reaction container;
Oxygen concentration measuring means for measuring the oxygen concentration in the space between the external vessel and the reaction vessel;
A hydrogen concentration measuring means for measuring a hydrogen concentration in a space between the external container and the reaction container;
Temperature measuring means for measuring the temperature of the space between the external container and the reaction container;
Control means for controlling the operation of each means,
The control means includes
After the supply of the inert gas by the inert gas supply means is started, the measurement by the hydrogen concentration measurement means, the oxygen concentration measurement means, and the temperature measurement means is performed,
According to at least two measurement results among the measurement results by the hydrogen concentration measurement unit, the oxygen concentration measurement unit, and the temperature measurement unit, heating by the heating unit, supply of hydrogen gas by the hydrogen gas supply unit, and A substrate processing apparatus that controls exhaust by an exhaust means. A reaction vessel containing a substrate;
Hydrogen gas supply means for supplying hydrogen gas into the reaction vessel;
A heating means provided outside the reaction vessel and for heating the substrate through the reaction vessel;
An external container for housing the reaction container and the heating means;
An inert gas supply means for supplying an inert gas to a space between the external container and the reaction container;
A vent for communicating inside and outside of the external container;
Exhaust means for exhausting the atmosphere of the space between the external container and the reaction container;
Oxygen concentration measuring means for measuring the oxygen concentration in the space between the external vessel and the reaction vessel;
A hydrogen concentration measuring means for measuring a hydrogen concentration in a space between the external container and the reaction container;
Temperature measuring means for measuring the temperature of the space between the external container and the reaction container;
A semiconductor device manufacturing method implemented by a substrate processing apparatus comprising: control means for controlling the operation of each means;
The control means is
Starting the supply of inert gas by the inert gas supply means;
A step of performing measurement by the hydrogen concentration measuring means, the oxygen concentration measuring means, and the temperature measuring means;
According to at least two measurement results among the measurement results by the hydrogen concentration measurement unit, the oxygen concentration measurement unit, and the temperature measurement unit, heating by the heating unit, supply of hydrogen gas by the hydrogen gas supply unit, and And a step of controlling the exhaust by the exhaust means.