JP2011066248A - Apparatus and method of charged particle beam lithography - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a charged particle beam lithography apparatus and a charged particle beam lithography method for simultaneously satisfying improvement in the accuracy of lithography and in the high throughput of lithography. <P>SOLUTION: The charged particle beam lithography method includes the steps of: conducting lithographic process with the electron beam to a first sample placed on a stage built in a lithography chamber; and carrying a second sample as an object of the lithography process, after the first sample into the processing chambers arranged surrounding a robot chamber via the robot chambers arranged at the location neighboring to the lithography chamber. While the second sample is carried to the processing chamber, irradiation of electron beam to the first sample in the lithography chamber is suspended, and irradiation to the electron beam irradiating part, that is provided to the stage and is constituted of a material having electron reflectance equal to that of the first sample, is conducted. After the second sample is transferred to the processing chamber, irradiation of the electron beam to the first sample in the lithography chamber is restarted. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a charged particle beam drawing apparatus and a charged particle beam drawing method.

  In recent years, the circuit line width required for a semiconductor element has become increasingly narrower as the large scale integrated circuit (LSI) is highly integrated and has a large capacity. The semiconductor element uses an original pattern pattern (a mask or a reticle, which will be collectively referred to as a mask hereinafter) on which a circuit pattern is formed, and the circuit is exposed and transferred onto a wafer by a reduction projection exposure apparatus called a stepper. Manufactured by forming. For manufacturing a mask for transferring such a fine circuit pattern onto a wafer, an electron beam drawing apparatus capable of drawing the fine pattern is used. Attempts have also been made to develop a laser beam drawing apparatus for drawing using a laser beam. The electron beam drawing apparatus is also used when drawing a pattern circuit directly on a wafer.

  By the way, an improvement in yield is indispensable for manufacturing an LSI with a large cost. On the other hand, as represented by a 1 gigabit class DRAM (Random Access Memory), the pattern constituting the LSI is going to be on the order of submicron to nanometer. Here, one of the major factors that decrease the yield is a decrease in drawing accuracy. In particular, there has been a problem that the amount of drift of the electron beam becomes large at the beginning of drawing and the accuracy of the pattern drawn on the mask is lowered.

  In order to deal with such a problem, in Patent Document 1, a drawing operation is performed in the drift absorber before performing drawing on the mask, and drawing on the mask is started after the beam drift correction amount becomes smaller than the threshold value. Is disclosed.

Japanese Patent No. 2956628

  In Patent Document 1, the beam drift amount to the drift absorber is measured, and the operation of inputting the value obtained by inverting the sign of this value to the deflector as the drift correction amount is repeated. When the drift correction amount becomes equal to or less than the threshold value, the electron beam irradiation target is changed from the drift absorbing portion to the mask.

  By the way, the electron beam drawing apparatus is required to have a high throughput. However, Patent Document 1 recognizes the description from the viewpoint of improving the drawing accuracy, but does not show a description about the high throughput. For this reason, there has been a demand for an electron beam drawing apparatus and an electron beam drawing method that simultaneously satisfy the improvement in drawing accuracy and the increase in throughput.

  The present invention has been made in view of these points. That is, an object of the present invention is to provide a charged particle beam drawing apparatus and a charged particle beam drawing method that simultaneously satisfy the improvement in drawing accuracy and the increase in throughput.

  Other objects and advantages of the present invention will become apparent from the following description.

A first aspect of the present invention includes a drawing chamber containing a stage;
Beam irradiation means for irradiating a charged particle beam to a sample placed on the stage;
A robot room located adjacent to the drawing room;
And a processing chamber disposed around the robot chamber,
The stage is provided with a charged particle beam irradiation part made of a material with the same reflectivity of the sample and the charged particles,
Charged particle beam drawing apparatus characterized in that irradiation of a charged particle beam irradiation unit is stopped by stopping irradiation of a charged particle beam to another sample in the drawing chamber while the sample is transported to the processing chamber through the robot chamber About.

  The processing chamber can be an alignment chamber that performs processing for positioning the sample or a static elimination chamber that performs processing to remove static electricity from the sample.

  The charged particle beam irradiation unit can be a reference mark used for measuring the drift amount of the charged particle beam.

The second aspect of the present invention includes a step of placing a first sample on a stage built in a drawing chamber and performing a drawing process with a charged particle beam;
And transporting a second sample to be processed next to the first sample to a processing chamber disposed around the robot chamber through a robot chamber positioned adjacent to the drawing chamber. And
While the second sample is transported to the processing chamber, irradiation of the charged particle beam to the first sample in the drawing chamber is stopped, and a material provided on the stage and having a reflectivity of the charged particles similar to that of the first sample After irradiating the charged particle beam irradiating unit configured as follows and transporting the second sample to the processing chamber, irradiation of the charged particle beam to the first sample in the drawing chamber is resumed. The present invention relates to a charged particle beam writing method.

  The processing chamber can be an alignment chamber that performs processing for positioning the sample or a static elimination chamber that performs processing to remove static electricity from the sample.

  According to the first aspect of the present invention, there is provided a charged particle beam drawing apparatus that satisfies the improvement of the drawing accuracy and the high throughput at the same time.

  According to the second aspect of the present invention, there is provided a charged particle beam writing method that satisfies the improvement of the drawing accuracy and the high throughput at the same time.

It is sectional drawing which looked at the electron beam drawing apparatus by this Embodiment from the side. It is sectional drawing which looked at the electron beam drawing apparatus by this Embodiment from the top. It is a flowchart of the electron beam drawing method by this Embodiment. It is a figure which shows the structure of the electron beam drawing apparatus in this Embodiment in association with each control unit. It is a figure explaining the pattern drawing method by an electron beam drawing apparatus. It is a flowchart of the comparative example of this Embodiment. It is a figure which shows the time-dependent change of the amount of position shift of drawing about an Example and a comparative example.

  1 and 2 show an electron beam drawing apparatus which is an example of the charged particle beam drawing apparatus of the present invention.

  The electron beam drawing apparatus is an apparatus that draws a predetermined pattern by irradiating an electron beam onto a sample M such as a mask. The electron beam drawing apparatus and electrons serving as beam irradiation means standing on the ceiling of the drawing chamber 1 and the drawing chamber 1. The lens barrel 2, a vacuum robot chamber 3 disposed at a position adjacent to the drawing chamber 1, a transfer robot 4 accommodated in the robot chamber 3, and a position adjacent to the robot chamber 3 on the opposite side of the drawing chamber 1 The load lock chamber 5 is provided.

  Gate valves 6 and 7 are interposed between the robot chamber 3 and the drawing chamber 1 and the load lock chamber 5, respectively. Further, in two surrounding areas not adjacent to the drawing chamber 1 and the load lock chamber 5 of the robot chamber 3, an alignment chamber 8 that is a processing chamber that performs processing for positioning the sample M, and processing that performs processing for removing static electricity from the sample M. A static elimination chamber 9 as a chamber is arranged.

  Note that the configuration of the drawing chamber 1, the electron column 2, the load lock chamber 5, the alignment chamber 8, and the static elimination chamber 9 is conventionally known, and detailed description thereof is omitted. Further, the electron beam drawing apparatus may be configured without the static elimination chamber 9.

  The sample M is, for example, a mask in which a light shielding film such as a chromium film and a resist film are stacked on a glass substrate. In the present embodiment, the sample M is put into the load lock chamber 5 by a robot (not shown). After the load lock chamber 5 is evacuated, the gate valve 7 is opened, and the transfer robot 4 transfers the sample M from the load lock chamber 5 to the alignment chamber 8. When the sample M is positioned in the alignment chamber 8, the sample M is transferred from the alignment chamber 8 to the charge removal chamber 9 by the transfer robot 4 and the sample M is discharged. Next, the transfer robot 4 carries the sample M out of the static elimination chamber 9, opens the gate valve 6, and transfers the sample M to the stage 1 a stored in the drawing chamber 1. Alternatively, after positioning the sample M in the alignment chamber 8, the sample M may be unloaded from the alignment chamber 8 by the transfer robot 4, the gate valve 6 may be opened, and the sample M may be transferred to the drawing chamber 1.

  The stage 1a is movable in two horizontal orthogonal directions. Then, the stage 1a is moved while irradiating the sample M placed on the stage 1a with the electron beam from the electron column 2, and the sample M is scanned with the electron beam to draw a predetermined pattern.

  The transfer robot 4 includes a robot body 41 that can turn around a vertical axis, a lifting rod 42 that is supported by the robot body 41 so as to be movable up and down, a flexible robot arm 43 that is attached to the upper end of the lifting rod 42, and a robot arm. And an end effector 44 on which a sample M is mounted. The robot body 41 incorporates drive sources for turning the robot body 41, raising and lowering the lifting rod 42, and bending and extending the robot arm 43.

  The electron beam drawing apparatus includes a constant temperature means for maintaining the temperature of the robot chamber 3 at a predetermined temperature (for example, 23 ° C.). As a result, the temperatures of the robot chamber 3, the alignment chamber 8 communicating with the robot chamber 3, and the static elimination chamber 9 are maintained at the same temperature. Further, the temperature of the drawing chamber 1 is also maintained at the same predetermined temperature as that of the robot chamber 3 by the same constant temperature means.

  By maintaining the robot chamber 3, the alignment chamber 8, and the charge removal chamber 9 at the predetermined temperatures as described above, the temperature of the sample M becomes the predetermined temperature during the processing in the alignment chamber 8 and the charge removal chamber 9. Accordingly, there is no need to wait until the temperature of the sample M reaches a predetermined temperature after the sample M is transferred to the stage 1a after the processing in the static elimination chamber 9 until the drawing is started, so that the throughput can be improved. it can.

  Further, in the present embodiment, in order to increase the throughput of the electron beam drawing apparatus, the second sample M is carried into the robot chamber 3 while the first sample M is drawn in the drawing chamber 1. Then, it is carried into the alignment chamber 8 by the transfer robot 4. Then, after positioning the sample M in the alignment chamber 8, the sample M is transferred from the alignment chamber 8 to the charge removal chamber 9 by the transfer robot 4, and the sample M is discharged.

  Here, there is a possibility that the drawing accuracy on the first sample M may be lowered due to the opening / closing operation of the valve 7 at the time of transport or the generation of electromagnetic waves by driving the transport robot 4. For this reason, the drawing operation on the first sample M in the drawing chamber 1 is stopped until the second sample M is carried into the static elimination chamber 9. In the configuration in which the static elimination chamber 9 is not provided, the drawing operation on the first sample M is stopped until it is carried into the alignment chamber 8.

  As the stop of the drawing operation, for example, the stage 1a is moved in the drawing chamber 1 so that the electron beam does not reach the sample M, and the electron beam is deflected by a blanking deflector (not shown). It is conceivable that the beam is cut with a blanking aperture (not shown). In this case, when it is confirmed that the second sample M has been transported to a predetermined position in the static elimination chamber 9 (or the alignment chamber 8), the blanking deflector is operated to apply the first sample M to the first sample M. The drawing operation is resumed.

  However, the above method causes the following problems.

  When the sample M is irradiated with an electron beam, reflected electrons are generated. The generated reflected electrons collide with an optical system or detector (not shown) in the drawing chamber 1 or the electron lens barrel 2 and are charged up, thereby generating a new electric field. Then, the trajectory of the electron beam deflected toward the sample M changes, and beam drift occurs in which the drawing position deviates from the desired position. Therefore, the electron beam drawing apparatus measures the amount of beam drift and performs necessary corrections on the irradiation position of the electron beam.

  By the way, the charge is stabilized after a certain amount of time has elapsed since the start of drawing. However, if the electron beam is prevented from reaching the stage 1a while the second sample M is being transported, the reflected electrons are reduced, and the charges in a stable state are discharged. For this reason, the state of charge at the time when the transport of the second sample M is completed and drawing on the first sample M is resumed is different from the state at the time when drawing is stopped. Therefore, the beam drift amount immediately after resuming the drawing fluctuates from the previous value, thereby causing a deviation in the irradiation position of the electron beam and lowering the drawing accuracy.

  In order to solve the above problem, it is preferable to stop drawing on the first sample M in a state where the charge is stably maintained. Therefore, in the present embodiment, an electron beam irradiation unit 100 different from the sample M is provided on the stage 1a. While the second sample M is being transported, the electron beam irradiation unit 100 is irradiated with the electron beam in the drawing chamber 1 instead of the first sample M. In this way, it is possible to stop drawing on the first sample M while maintaining the charged state.

  The electron beam irradiation unit 100 is preferably configured using a material having the same reflectance as that of the sample M. Further, the electron beam irradiation unit 100 can also be used as a mark used for electron beam calibration. Here, the calibration mark is a reference mark used for measuring the beam drift amount. In the electron beam drawing apparatus, the reference mark position on the stage is detected during drawing, the beam drift amount is measured, and the drawing position is calibrated so as to be a desired position. Specifically, first, the coordinates of the reference mark are obtained immediately before drawing, and then the drawing operation is paused during drawing to obtain the coordinates of the reference mark again. Then, the beam drift amount is detected by obtaining a difference from the previous coordinates. Such a reference mark may be used as an electron beam irradiation unit.

  The reference mark is configured using, for example, tantalum (Ta). Further, it is known that the region where electrons are reflected from the reference mark is limited to a narrow range on the stage 1a. Therefore, the influence on the first sample M by the electron beam irradiation to the reference mark can be ignored. Even when an electron beam irradiation unit 100 other than the reference mark is used, the electron beam irradiation unit 100 is provided at a position where the first sample M is not affected by the electron beam irradiation.

  FIG. 3 is a flowchart of the electron beam writing method according to the present embodiment. FIG. 4 shows the configuration of the electron beam drawing apparatus according to the present embodiment in association with each control unit. Below, it demonstrates using these figures.

  As described with reference to FIGS. 1 and 2, the electron beam drawing apparatus is adjacent to the drawing chamber 1, a vacuum drawing chamber 1, an electron column 2 that is a beam irradiation means standing on the ceiling of the drawing chamber 1, and the drawing chamber 1. A vacuum robot chamber 3 disposed at a position, a load lock chamber 5 disposed adjacent to the robot chamber 3 on the opposite side of the drawing chamber 1, and a sample transfer chamber disposed adjacent to the load lock chamber 5 61. The two surrounding areas not adjacent to the drawing chamber 1 and the load lock chamber 5 of the robot chamber 3 are an alignment chamber 8 that is a processing chamber that performs processing for positioning the sample M, and a processing chamber that performs processing for removing static electricity from the sample M. A static elimination chamber (not shown) is arranged.

  The electron column 2 generates an electron beam in a vacuum atmosphere, and shapes and deflects the electron beam. The drawing chamber 1 irradiates the sample M with an electron beam sent from the electron column 2. In the drawing chamber 1, a stage 1a for holding the sample M and positioning with high accuracy for electron beam irradiation is provided.

  In the alignment chamber 8, the sample M is roughly positioned so that the sample M can be positioned quickly and efficiently on the stage 1a. Therefore, the alignment chamber 8 is provided with a positioning mechanism (not shown) for temporarily positioning the sample M.

  The robot chamber 3 is provided with a transfer robot (not shown) for executing the movement of the sample M between adjacent chambers.

  The load lock chamber 5 is a chamber that provides a space for waiting for the sample M, and the pressure in the load lock chamber 5 is set to a vacuum atmosphere similar to that of the drawing chamber 1 by a pressure control device (not shown). It is selectively controlled to atmospheric pressure. In other words, the atmosphere in which the sample M is placed can be freely switched to either an air atmosphere or a vacuum atmosphere. In the drawing chamber 1, the alignment chamber 8, and the robot chamber 3, the sample M is placed in a vacuum atmosphere. On the other hand, in the sample transfer chamber 61, the sample M is placed in an air atmosphere. Therefore, the atmosphere in which the sample M is placed is switched using the load lock chamber 5.

  In the sample transfer chamber 61, the unprocessed sample M is transferred to the load lock chamber 5, and the drawn sample M is transferred to the next step.

  The electron beam drawing apparatus of the present embodiment is constituted by the above chambers, and an electron beam drawing method using this apparatus is performed as follows.

  First, the sample M is set in the sample transfer chamber 61. As the sample M, for example, a mask in which a light shielding film such as a chromium film and a resist film are stacked on a glass substrate is used. Next, the sample M is transported from the sample transport chamber 61 to the load lock chamber 5 in which the interior is set to an air atmosphere, as indicated by the solid line arrow in FIG.

  In the load lock chamber 5, the pressure in the chamber is controlled to a vacuum atmosphere comparable to that of the drawing chamber 1 by a pressure control device (not shown). Thereafter, the sample M is set in the alignment chamber 8 by a transfer robot (not shown) in the robot chamber 3 as indicated by the solid line arrow in FIG.

In the example of FIG. 4, the sample M roughly positioned in the alignment chamber 8 is subsequently transported to the drawing chamber 1.
That is, the sample M is first roughly positioned by the positioning mechanism (not shown) in the alignment chamber 8 so that the sample M is positioned quickly and efficiently on the stage 1a. Next, the sample M is set on the stage 1a in the drawing chamber 1 by a transfer robot (not shown) in the robot chamber 3 as indicated by a solid line arrow in FIG. Then, on the stage 1a, the sample M is aligned with high accuracy for drawing by electron beam irradiation.

  Next, the sample M is irradiated with the electron beam sent out from the electron column 2 on the stage 1a. Thereby, a desired pattern is drawn on the surface of the sample M.

  In the present embodiment, after the first sample M is carried into the drawing chamber 1, the second sample M is set from the sample transport chamber 61 to the alignment chamber 8 through the robot chamber 3 in the same manner as described above. To do. At this time, in order to avoid the influence of the transport of the second sample on the drawing process, the drawing process on the first sample M is stopped until the transport of the second sample M is completed, and the electron beam The irradiation part is irradiated with an electron beam. This series of steps will be described with reference to FIG.

  When the transport of the second sample M is started in the electron beam drawing apparatus while the drawing process on the first sample M is being performed, the electron beam is once deflected by a deflector (not shown). Then, the electron beam is cut with a blanking aperture (not shown). Next, the irradiation position of the electron beam is moved to the electron beam irradiation unit. Thereafter, irradiation of the electron beam irradiation unit is continued until the conveyance of the second sample M is completed.

  When it is confirmed that the conveyance of the second sample M is completed, the electron beam is again deflected by the deflector and the electron beam is cut by the blanking aperture. Next, the irradiation position of the electron beam is returned to the first sample M, and the drawing process is resumed.

The steps in FIG. 3 are efficiently performed by the control units shown in FIG. 4 operating in conjunction with each other.
As shown in FIG. 4, the electron beam drawing apparatus includes a sample container opening / closing unit 101, a valve control unit 102, a robot control unit 103, a stage control unit 104, a sample transport control unit 105, and a beam deflection control unit 107. And a blanking unit 108. Each of these units is controlled by the overall control unit 106.

  The sample container opening / closing unit 101 controls the opening / closing control of the container storing the sample M in the sample transfer chamber 61. When the sample M is carried in / out from the sample transfer chamber 61, an instruction is issued from the overall control unit 106 to the sample container opening / closing unit 101, and the container is opened / closed by the sample container opening / closing unit 101.

  The valve control unit 102 is in charge of opening / closing control of valves (not shown) in the load lock chamber 5 and the robot chamber 3. When the sample M is transferred between the sample transfer chamber 61 and the robot chamber 3 through the load lock chamber 5, or when the sample M is transferred between the robot chamber 3 and the alignment chamber 8 or the drawing chamber 1, the overall control is performed. An instruction is issued from the unit 106 to the valve control unit 102, and the valve is opened and closed by the valve control unit 102.

  The robot control unit 103 controls the transfer robot disposed in the robot chamber 3. When the sample 3 is transferred between the robot chamber 3, the load lock chamber 5, and the alignment chamber 8 or the drawing chamber 1, an instruction is issued from the overall control unit 106 to the robot control unit 103, and the transfer robot Necessary actions are performed.

  The stage control unit 104 controls the stage 1a. The sample container opening / closing unit 101, the valve control unit 102, the robot control unit 103, and the stage control unit 104 are linked to the sample transport control unit 105.

  When performing drawing processing by irradiating the sample M with the electron beam or switching the irradiation position of the electron beam between the sample M and the electron beam irradiation unit, the overall control unit 106 to the beam deflection control unit 107. Is instructed. The beam deflection control unit 107 controls operations of a blanking deflector, a shaping deflector, a main deflector, and a sub deflector (not shown) via the blanking unit 108 and the like. In the process of FIG. 3, an instruction is issued to the blanking unit 108 that controls the blanking deflector to control the irradiation position of the electron beam.

  FIG. 5 is a diagram for explaining a pattern drawing method by the electron beam drawing apparatus.

  The electron beam B emitted from the electron gun in the electron column is controlled to a predetermined shape and size by a molding aperture (not shown), and is then irradiated onto the sample M. As shown in FIG. 5, the pattern 5 drawn on the sample M is divided into a plurality of strip-like frames 51 having a width in the Y direction that can be deflected by main deflection. Are divided into subfields 52. When the pattern P is drawn, the stage 1a is continuously moved in the X direction orthogonal to the width direction of the frame 51, and the electron beam B is positioned in each subfield 52 by main deflection, and the subfield 52 is subdivided by subdeflection. The figure 53 is drawn by shooting the electron beam B at a predetermined position. When the drawing of one frame 51 is completed, the stage 1a is moved stepwise in the Y direction, the next frame 51 is drawn, and this is repeated to draw the pattern P on the entire sample M. When the size of the figure 53 is large, the figure 53 is divided into a plurality of parts, and the electron beam B is shot in order on each part. During drawing, since the stage 1a continuously moves in one direction, the drawing origin of the subfield 52 is tracked by the main deflector so that the drawing origin follows the movement of the stage 1a.

  When the conveyance to the second sample M is started while the drawing process on the first sample M is performed as described above, the electron beam is once deflected by the blanking deflector. Irradiated on the blanking aperture. Next, the irradiation position of the electron beam is moved to the electron beam irradiation unit, and irradiation of the electron beam irradiation unit is continued until the transport of the second sample M is completed.

  FIG. 6 is a comparative example of the present embodiment, and shows a flow for preventing the electron beam from being irradiated onto the stage while the second sample is being conveyed.

  In the method of FIG. 6, when transport to the second sample M is started in the electron beam drawing apparatus while drawing processing on the first sample M is performed, the deflector deflects the electron beam. Then cut the electron beam with a blanking aperture. Further, the stage is moved in the drawing chamber so that the electron beam does not reach the sample. When the transport of the second sample M is completed, the stage is returned to the original position, and the drawing process for the first sample is resumed.

  The flow in FIG. 3 differs from the flow in FIG. 6 depending on whether or not the electron beam has reached the stage during the transfer of the second sample. That is, in the flow of FIG. 6, the electron beam is prevented from reaching the stage, whereas in the flow of FIG. 3, the electron beam irradiation unit provided on the stage is irradiated with the electron beam. For this reason, in the flow of FIG. 6, when the drawing on the first sample is resumed, the charging state is different from that before the drawing is stopped. However, according to the flow of FIG. Drawing on the sample can be stopped. Therefore, when the drawing of the first sample is resumed after the transport of the second sample, it is possible to prevent the drift amount from fluctuating greatly and causing a deviation in the irradiation position of the electron beam.

  FIG. 7 shows changes over time in the amount of drawing misregistration for the example corresponding to the flow of FIG. 3 and the comparative example corresponding to the flow of FIG. As can be seen from this figure, according to the present embodiment, it is understood that the deviation of the irradiation position of the electron beam is reduced.

  The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, although the electron beam is used in the above embodiment, the present invention can also be applied to cases where other charged particle beams such as an ion beam are used.

  In the above embodiments, descriptions of parts that are not directly required for the description of the present invention, such as the device configuration and control method, are omitted. However, the required device configuration and control method may be appropriately selected and used. Needless to say, you can. In addition, all charged particle beam apparatuses or charged particle beam drawing methods that include elements of the present invention and that can be appropriately modified by those skilled in the art are included in the scope of the present invention.

DESCRIPTION OF SYMBOLS 1 Drawing chamber 1a Stage 2 Electron lens barrel 3 Robot chamber 4 Transfer robot 5 Load lock chamber 6, 7 Gate valve 8 Alignment 9 Static elimination chamber 51 Frame 52 Subfield 53 Graphic 61 Sample transfer chamber 100 Electron beam irradiation part 101 Sample container opening / closing unit 102 Valve control unit 103 Robot control unit 104 Stage control unit 105 Sample transport control unit 106 Overall control unit 107 Beam deflection control unit 108 Blanking unit M Sample P Pattern

Claims (5)

A drawing room with a built-in stage;
Beam irradiation means for irradiating a charged particle beam to a sample placed on the stage; and
A robot room arranged at a position adjacent to the drawing room;
A processing chamber disposed around the robot chamber,
The stage is provided with a charged particle beam irradiation unit made of a material having the same reflectivity as the sample and the charged particles,
Charging characterized in that while the sample is transported to the processing chamber through the robot chamber, the charged particle beam irradiation unit is irradiated by stopping irradiation of the charged particle beam to another sample in the drawing chamber. Particle beam drawing device.   2. The charged particle beam drawing apparatus according to claim 1, wherein the processing chamber is an alignment chamber that performs processing for positioning a sample, or a static elimination chamber that performs processing for neutralizing static electricity of the sample.   The charged particle beam writing apparatus according to claim 1, wherein the charged particle beam irradiation unit is a reference mark used for measuring a drift amount of the charged particle beam. Placing a first sample on a stage built in a drawing chamber and performing a drawing process with a charged particle beam;
A step of transporting a second sample to be drawn next to the first sample to a processing chamber disposed around the robot chamber via a robot chamber disposed at a position adjacent to the drawing chamber; And
While the second sample is transported to the processing chamber, the irradiation of the charged particle beam to the first sample in the drawing chamber is stopped, and the reflectivity of the charged particles provided on the stage is the first After irradiating a charged particle beam irradiation unit made of a material similar to the sample and transporting the second sample to the processing chamber, the charged particle beam to the first sample in the drawing chamber The charged particle beam drawing method characterized by restarting the irradiation of the above. 5. The charged particle beam drawing method according to claim 4, wherein the processing chamber is an alignment chamber that performs processing for positioning a sample or a static elimination chamber that performs processing to neutralize static electricity of the sample.

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