JP2011060903A - Substrate treatment apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus for improving responsiveness when a liquid raw material is supplied to a vaporizer. <P>SOLUTION: The substrate treatment apparatus includes: a treatment chamber 16 for treating a wafer 14, an LMFC 78h for controlling a flow rate of a first liquid raw material; the vaporizer 76h for vaporizing the liquid raw material which is controlled in flow rate by the LMFC 78h; a raw material gas supply pipe 90 for supplying raw material gas which is obtained by vaporizing the liquid raw material by the vaporizer 76h to the treatment chamber 16; and a controller 150 for controlling the LMFC 78h to temporarily set the flow rate setting value of the liquid raw material in the LMFC 78h a second flow rate setting value (f2) smaller than a first flow rate setting value (f1) before being set to a first flow rate setting value (f1) at the treatment of the wafer 14. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus.

Thin film forming methods used in semiconductor manufacturing apparatuses include physical vapor deposition (PVD) such as sputtering and chemical vapor deposition (CVD) using a chemical reaction.
CVD is suitable for mass production because it improves the film formation characteristics such as superior step coverage compared to PVD, and also improves productivity, such as eliminating the need to open the reaction chamber to the atmosphere for replacing raw materials (targets). This is a thin film forming method.

  The film deposition process in CVD includes a gas phase reaction process and a surface reaction process (reaction on the film formation surface). The film formation rate is slower in the surface reaction than in the gas phase reaction, and the control of the surface reaction becomes more important as the desired film thickness decreases. For example, ALD (Atomic Layer Deposition) realizes precise control of surface reaction.

  In CVD, a thin film is formed by (1) supply of reactive species, (2) reaction of the reactive species on the surface of the substrate (film formation), (3) desorption of byproducts. When the reactive species are continuously supplied, the above supply / reaction / desorption proceeds simultaneously. For this reason, by-products that are originally excluded during the desorption are taken into the film. In particular, in MOCVD (Metal Organic Chemical Deposition) using organic raw materials, by-products derived from organic ligands such as carbon are taken into the film and become impurities, resulting in a decrease in the dielectric constant and leakage of the film. Deteriorate the characteristics of the film to be formed, such as an increase in current. Therefore, the desired film thickness is divided and formed little by little, and each time, the reactive species excited by remote plasma or the like, or an oxidizing agent such as ozone reacts with impurities in the film and is discharged out of the film. A film forming method for inserting a process or the like has been proposed.

In Patent Document 1, in order to form a hafnium silicate (HfSiO) film by CVD (MOCVD), tetrakis (1-methoxy-2-methyl-2-propoxy) hafnium (Hf (MMP) ₄ ) as an organic raw material, A method for manufacturing a semiconductor device and a substrate processing apparatus using tetrakis (1-methoxy-2-methyl-2-propoxy) silicon (Si (MMP) ₄ ) are disclosed.

JP 2009-49316 A

  When the raw material is liquid at room temperature and normal pressure, the raw material is heated and converted into a gas. A vaporizer is used as a supply device for changing the phase when the liquid raw material is vaporized. When the liquid raw material is supplied to the vaporizer while the flow rate is controlled, the liquid raw material is vaporized at a constant efficiency (desirably 100%) in the vaporizer and supplied to the reaction chamber downstream from the vaporizer.

  When stopping the supply of the liquid raw material to the vaporizer, if the flow path of the liquid raw material is completely closed at the flow rate control unit located at the vaporizer inlet, the closed portion of the flow rate control unit and the liquid raw material passing through the flow control unit are Contact to generate energy. As a result, the altered raw material may adhere to and deposit on the contacted portion. For this reason, normally, the closing portion of the flow rate control portion leaves a slight gap and does not completely close the flow path.

  Here, the pressure in the vaporizer is relatively lower than the upstream side of the vaporizer (the side where the liquid raw material is present). For this reason, when there is a slight gap in the closing portion, the liquid material gradually flows from this gap to the vaporizer and is consumed. As a result, the pressure of the liquid raw material in the vicinity of the vaporizer becomes lower than that in a state where the liquid raw material is flowing at a constant flow rate. When supplying the liquid raw material from this state to the vaporizer, it is first necessary to increase the pressure of the liquid raw material in the vicinity of the vaporizer. Therefore, the response speed until the liquid raw material is supplied to the vaporizer becomes slow.

  An object of this invention is to provide the substrate processing apparatus which can improve the responsiveness at the time of supplying a liquid raw material to a vaporizer.

  In order to solve the above problems, according to the present invention, a processing chamber for processing a substrate, a flow rate controller for controlling the flow rate of the liquid material, a vaporizer for vaporizing the liquid material whose flow rate is controlled by the flow rate controller, When a raw material gas supply pipe for supplying a raw material gas obtained by vaporizing a liquid raw material in the vaporizer into the processing chamber and a flow rate setting value of the liquid raw material in the flow rate controller are set to a first flow rate setting value during substrate processing And a control unit that controls the flow rate controller so as to set the flow rate setting value once smaller than the first flow rate setting value. Thereby, the responsiveness at the time of supplying a liquid raw material to a vaporizer can be improved.

  ADVANTAGE OF THE INVENTION According to this invention, the substrate processing apparatus which can improve the responsiveness at the time of supplying a liquid raw material to a vaporizer can be provided.

It is a section lineblock diagram at the time of substrate processing of a substrate processing device used by one embodiment of the present invention. It is a section lineblock diagram at the time of substrate conveyance of a substrate processing device used by one embodiment of the present invention. It is a block diagram of the gas supply system of the substrate processing apparatus used by one Embodiment of this invention. FIG. 4A is a diagram illustrating the supply timing of the liquid material according to the first embodiment, and FIG. 4B is a diagram illustrating the supply timing of the comparative example. It is a figure which shows the formation flow of a hafnium silicate film | membrane. FIG. 6A is a diagram illustrating the supply timing of the liquid material according to the second embodiment, and FIG. 6B is a diagram illustrating the supply timing of the liquid material according to the third embodiment.

(1) Configuration of Substrate Processing Apparatus First, the configuration of a substrate processing apparatus according to the present embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a cross-sectional configuration diagram of a substrate processing apparatus according to an embodiment of the present invention during wafer processing, and FIG. 2 is a cross-sectional configuration diagram of the substrate processing apparatus according to an embodiment of the present invention during wafer transfer.

<Processing chamber>
As shown in FIGS. 1 and 2, the substrate processing apparatus according to this embodiment includes a processing container 12. The processing container 12 is configured as a flat sealed container having a circular cross section, for example. The processing container 12 is made of a metal material such as aluminum (Al) or stainless steel (SUS). A processing chamber 16 for processing a wafer 14 as a substrate is configured in the processing container 12.

A support base 18 that supports the wafer 14 is provided in the processing chamber 16. For example, quartz (SiO ₂ ), carbon, ceramics, silicon carbide (SiC), aluminum oxide (Al ₂ O ₃ ), or aluminum nitride (AlN) is formed on the upper surface of the support base 18 that the wafer 14 directly touches. A susceptor 20 is provided as a support plate. In addition, the support base 18 incorporates a heater 22 as a heating means for heating the wafer 14. The lower end portion of the support base 18 passes through the bottom portion of the processing container 12.

  An elevating mechanism 24 is provided outside the processing chamber 16. By operating the lifting mechanism 24, the wafer 14 supported on the susceptor 20 can be lifted and lowered. The support table 18 rises to the position shown in FIG. 1 (wafer processing position) when the wafer 14 is processed, and descends to the position shown in FIG. 2 (wafer transfer position) when the wafer 14 is transferred. The periphery of the lower end portion of the support base 18 is covered with a bellows 26, and the inside of the processing chamber 16 is kept airtight.

  Further, for example, three lift pins 28 are provided in the vertical direction on the bottom surface (floor surface) of the processing chamber 16. The support base 18 is provided with through holes 30 for allowing the lift pins 28 to pass therethrough at positions corresponding to the lift pins 28. When the support table 18 is lowered to the wafer transfer position, the upper end portion of the lift pins 28 protrudes from the upper surface of the support table 18 so that the lift pins 28 support the wafer 14 from below.

  When the support table 18 is raised to the wafer processing position, the lift pins 28 are buried from the upper surface of the support table 18 so that the susceptor 20 provided on the upper surface of the support table 18 supports the wafer 14 from below. In addition, since the lift pins 28 are in direct contact with the wafer 14, it is desirable to form the lift pins 28 from a material such as quartz or alumina.

<Wafer transfer port>
On the inner wall side surface of the processing chamber 16, a wafer transfer port 32 for transferring the wafer 14 into and out of the processing chamber 16 is provided. The wafer transfer port 32 is provided with a gate valve 34. By opening the gate valve 34, the processing chamber 16 and the transfer chamber (preliminary chamber) 36 are communicated with each other. The transfer chamber 36 is formed in a sealed container 39, and a transfer robot 38 for transferring the wafer 14 is provided in the transfer chamber 36.

  The transfer robot 38 is provided with a transfer arm 38 a that supports the wafer 14 when the wafer 14 is transferred. By opening the gate valve 34 with the support 18 lowered to the wafer transfer position, the transfer robot 38 can transfer the wafer 14 between the processing chamber 16 and the transfer chamber 36. It is configured. The wafer 14 transferred into the processing chamber 16 is temporarily placed on the lift pins 28 as described above.

<Exhaust system>
An exhaust port 40 for exhausting the atmosphere in the processing chamber 16 is provided on the inner wall side surface of the processing chamber 16 and on the side opposite to the wafer transfer port 32. An exhaust pipe 42 is connected to the exhaust port 40. The exhaust pipe 42 includes a pressure regulator 44 such as an APC (Auto Pressure Controller) that controls the inside of the processing chamber 16 to a predetermined pressure, a raw material recovery trap 46, and A vacuum pump 48 is connected in series in order. An exhaust system (exhaust line) is mainly configured by the exhaust port 40, the exhaust pipe 42, the pressure regulator 44, the raw material recovery trap 46, and the vacuum pump 48.

<Gas inlet>
A gas inlet 50 for supplying various gases into the processing chamber 16 is provided on an upper surface (ceiling wall) of a shower head 52 described later provided in the upper portion of the processing chamber 16. The configuration of the gas supply system connected to the gas inlet 50 will be described later.

<Shower head>
A shower head 52 as a gas dispersion mechanism is provided between the gas inlet 50 and the wafer 14 at the wafer processing position. The shower head 52 disperses the gas introduced from the gas introduction port 50 and the gas that has passed through the dispersion plate 52a further uniformly and supplies the gas to the surface of the wafer 14 on the support base 18. A shower plate 52b. The dispersion plate 52a and the shower plate 52b are provided with a plurality of vent holes.

  The dispersion plate 52 a is disposed to face the upper surface of the shower head 52 and the shower plate 52 b, and the shower plate 52 b is disposed to face the wafer 14 on the support base 18. Note that spaces are provided between the upper surface of the shower head 52 and the dispersion plate 52a, and between the dispersion plate 52a and the shower plate 52b, respectively, and these spaces are supplied from the gas inlet 50. Function as a dispersion chamber (first buffer space) 52c for dispersing the gas and a second buffer space 52d for diffusing the gas that has passed through the dispersion plate 52a.

<Exhaust duct>
A step portion 54 is provided on the inner wall side surface of the processing chamber 16. The step portion 54 is configured to hold the conductance plate 56 near the wafer processing position. The conductance plate 56 is configured as a single donut-shaped (ring-shaped) disk in which a hole for accommodating the wafer 14 is provided in the inner peripheral portion.

  A plurality of outlets 58 arranged in the circumferential direction at predetermined intervals are provided on the outer periphery of the conductance plate 56. The discharge port 58 is formed discontinuously so that the outer periphery of the conductance plate 56 can support the inner periphery of the conductance plate 56.

  On the other hand, a lower plate 60 is locked to the outer peripheral portion of the support base 18. The lower plate 60 includes a ring-shaped concave portion 60a and a flange portion 60b provided integrally on the inner upper portion of the concave portion 60a. The recess 60 a is provided so as to close a gap between the outer peripheral portion of the support base 18 and the inner wall side surface of the processing chamber 16.

  A part of the bottom of the recess 60a near the exhaust port 40 is provided with a plate exhaust port 60c for exhausting (circulating) gas from the recess 60a to the exhaust port 40 side. The flange portion 60 b functions as a locking portion that locks on the upper outer peripheral edge of the support base 18. When the flange portion 60 b is locked on the upper outer peripheral edge of the support base 18, the lower plate 60 is moved up and down together with the support base 18 as the support base 18 moves up and down.

  When the support base 18 is raised to the wafer processing position, the lower plate 60 is also raised to the wafer processing position. As a result, the conductance plate 56 held in the vicinity of the wafer processing position closes the upper surface portion of the recess 60a of the lower plate 60, and the exhaust duct 62 is formed with the inside of the recess 60a as the gas flow path region. .

  At this time, due to the exhaust duct 62 (conductance plate 56 and lower plate 60) and the support base 18, the inside of the processing chamber 16 is located above the processing chamber above the exhaust duct 62 and below the processing chamber below the exhaust duct 62. It will be partitioned. The conductance plate 56 and the lower plate 60 are made of a material that can be maintained at a high temperature, for example, high temperature resistant high load quartz, in consideration of etching of reaction products deposited on the inner wall of the exhaust duct 62. Is preferred.

  Here, the flow of gas in the processing chamber 16 during wafer processing will be described. First, the gas supplied from the gas inlet 50 to the upper portion of the shower head 52 enters the second buffer space 52d through a plurality of holes of the dispersion plate 52a via the dispersion chamber (first buffer space) 52c, and further the shower. It passes through a large number of holes in the plate 52 b and is supplied into the processing chamber 16 and is supplied uniformly onto the wafer 14.

  The gas supplied onto the wafer 14 flows radially outward in the radial direction of the wafer 14. The surplus gas after contacting the wafer 14 flows radially on the exhaust duct 62 (that is, on the conductance plate 56) provided on the outer periphery of the support base 18 toward the radially outer side of the wafer 14. The gas is discharged from a discharge port 58 provided on the duct 62 into the gas flow path region (in the recess 60a) in the exhaust duct 62.

  Thereafter, the gas flows in the exhaust duct 62 and is exhausted to the exhaust port 40 via the plate exhaust port 60c. As described above, gas sneaking into the lower portion of the processing chamber 16, that is, the back surface of the support base 18 and the bottom surface side of the processing chamber 16 is suppressed.

  Next, the configuration of the gas supply system connected to the gas inlet 50 described above will be described with reference to FIG. FIG. 3 is a configuration diagram of a gas supply system (gas supply line) included in the substrate processing apparatus according to the embodiment of the present invention.

<Liquid material supply system>
Outside the processing chamber 16, a first liquid source supply source 70h for supplying an organometallic liquid source (hereinafter also referred to as Hf source) containing Hf (hafnium) as a first liquid source, and a second liquid source as a second liquid source A second liquid source supply source 70s that supplies an organometallic liquid source containing Si (silicon) (hereinafter also referred to as Si source) is provided. The first liquid raw material supply source 70h and the second liquid raw material supply source 70s are each configured as a tank (sealed container) capable of containing (filling) the liquid raw material therein.

Pressure gas supply pipes 72h and 72s are connected to the first liquid source supply source 70h and the second liquid source supply source 70s, respectively. A pressure gas supply source (not shown) is connected to upstream ends of the pressure gas supply pipes 72h and 72s. Further, the downstream end portions of the pressurized gas supply pipes 72h and 72s communicate with spaces existing in the upper portions of the first liquid raw material supply source 70h and the second liquid raw material supply source 70s, respectively. Gas is supplied.
As the pressurized gas, it is preferable to use a gas that does not react with the liquid material, for example an inert gas such as N ₂ gas is preferably used.

  A first liquid source supply pipe 74h and a second liquid source supply pipe 74s are connected to the first liquid source supply source 70h and the second liquid source supply source 70s, respectively. The upstream end portions of the first liquid source supply pipe 74h and the second liquid source supply pipe 74s are immersed in the liquid source accommodated in the first liquid source supply source 70h and the second liquid source supply source 70s, respectively. .

The downstream end portions of the first liquid raw material supply pipe 74h and the second liquid raw material supply pipe 74s are connected to vaporizers 76h and 76s as vaporizers for vaporizing the liquid raw material, respectively. In the first liquid source supply pipe 74h and the second liquid source supply pipe 74s, liquid flow rate controllers (LMFC) 78h and 78s as flow rate control means for controlling the supply rate of the liquid source, and opening / closing for controlling the supply of the liquid source Valves Vh1 and Vs1 are provided.
The open / close valves Vh1 and Vs1 are provided inside the vaporizers 76h and 76s, respectively.

  In the above configuration, the open / close valves Vh1 and Vs1 are opened and the pressurized gas is supplied from the pressurized gas supply pipes 72h and 72s, whereby the vaporizers 76h and 76s are supplied from the first liquid source supply source 70h and the second liquid source supply source 70s. The liquid raw material can be pumped (supplied) to the head.

  A first liquid raw material supply system (first liquid raw material supply line) is mainly configured by the first liquid raw material supply source 70h, the pressurized gas supply pipe 72h, the first liquid raw material supply pipe 74h, the liquid flow rate controller 78h, and the valve Vh1. The second liquid source supply system (second liquid source supply line) is mainly configured by the second liquid source supply source 70s, the pressurized gas supply pipe 72s, the second liquid source supply pipe 74s, the liquid flow rate controller 78s, and the valve Vs1. Is done.

<Vaporization part>
Vaporizers 76h and 76s serving as vaporizers for vaporizing the liquid source are vaporized by heating the liquid source with heaters 80h and 80s to generate a source gas, and into the vaporization chambers 82h and 82s. Liquid source channels 84h and 84s, which are channels until the liquid source is discharged, the above-described opening / closing valves Vh1 and Vs1 for controlling the supply of the liquid source into the vaporization chambers 82h and 82s, and the vaporization chambers 82h and 82s. Has source gas supply ports 86h and 86s as outlets for supplying the source gas generated in the first and second source gas supply pipes 90h and 90s to be described later.

  The downstream end portions of the first liquid source supply pipe 74h and the second liquid source supply pipe 74s are connected to the upstream end portions of the liquid source flow paths 84h and 84s via the open / close valves Vh1 and Vs1, respectively. The downstream ends of the carrier gas supply pipes 92h and 92s are connected to the liquid source channels 84h and 84s, respectively, and the carrier gas is supplied into the vaporization chambers 82h and 82s via the liquid source channels 84h and 84s. Is configured to do.

An N ₂ gas supply source 100c for supplying N ₂ gas as a carrier gas is connected to upstream end portions of the carrier gas supply pipes 92h and 92s. Carrier gas supply pipe 92h, the 92 s, the flow rate controller (MFC) 102h as a flow rate controller for controlling the supply flow rate of N ₂ gas, and 102s, and the valve Vh2, Vs2 for controlling the supply of N ₂ gas, respectively Is provided.

A carrier gas supply system (carrier gas supply line) is mainly configured by the N ₂ gas supply source 100c, carrier gas supply pipes 92h and 92s, flow rate controllers 102h and 102s, and valves Vh2 and Vs2. The vaporizers 76h and 76s are configured as a first vaporizer and a second vaporizer, respectively.

<Raw gas supply system>
The upstream end portions of the first source gas supply pipe 90h and the second source gas supply pipe 90s for supplying the source gas into the processing chamber 16 are respectively connected to the source gas supply ports 86h and 86s of the vaporizers 76h and 76s. It is connected. The downstream end portions of the first source gas supply pipe 90h and the second source gas supply pipe 90s are unified so as to be merged into a source gas supply pipe 90, and the unified source gas supply pipe 90 is used for gas introduction. It is connected to the mouth 50.
The first source gas supply pipe 90h and the second source gas supply pipe 90s are provided with opening / closing valves Vh3 and Vs3 for controlling the supply of the source gas into the processing chamber 16, respectively.

  In the above configuration, the liquid raw material is vaporized by the vaporizers 76h and 76s to generate the raw material gas, and the open / close valves Vh3 and Vs3 are opened to open the first raw material gas supply pipe 90h and the second raw material gas supply pipe 90s. The source gas can be supplied into the processing chamber 16 through the source gas supply pipe 90.

  A first source gas supply system (first source gas supply line) is mainly configured by the first source gas supply pipe 90h and the valve Vh3, and the second source gas supply pipe 90s and the valve Vs3 mainly provide the second source gas supply system. A source gas supply system (second source gas supply line) is configured. The first liquid source supply system, the first vaporization unit, and the first source gas supply system constitute a first source supply system (Hf source supply system), and the second liquid source supply system, the second vaporization unit, the second source The source gas supply system constitutes a second source supply system (Si source supply system).

<Reactive gas supply system>
An oxygen gas supply source 100ox for supplying oxygen (O ₂ ) gas is provided outside the processing chamber 16. The upstream end of the first oxygen gas supply pipe 104ox is connected to the oxygen gas supply source 100ox. Further, an ozonizer 106ox for generating a reaction gas (reactant), that is, ozone gas as an oxidant from oxygen gas by plasma, is connected to the downstream end of the first oxygen gas supply pipe 104ox. The first oxygen gas supply pipe 104ox is provided with a flow rate controller 108ox as flow rate control means for controlling the supply flow rate of oxygen gas.

  An upstream end of an ozone gas supply pipe 90ox as a reaction gas supply pipe is connected to an ozone gas supply port 86ox as an outlet of the ozonizer 106ox. Further, the downstream end of the ozone gas supply pipe 90ox is connected so as to join the raw material gas supply pipe 90. That is, the ozone gas supply pipe 90 ox is configured to supply ozone gas as a reaction gas into the processing chamber 16. The ozone gas supply pipe 90 ox is provided with an open / close valve Vox 3 that controls the supply of ozone gas into the processing chamber 16.

  The upstream end of the second oxygen gas supply pipe 110ox is connected to the upstream side of the flow rate controller 108ox of the first oxygen gas supply pipe 104ox. The downstream end of the second oxygen gas supply pipe 110ox is connected to the upstream side of the open / close valve Vox3 of the ozone gas supply pipe 90ox. The second oxygen gas supply pipe 110ox is provided with a flow rate controller 112ox as flow rate control means for controlling the supply flow rate of oxygen gas.

  In the above configuration, oxygen gas is supplied to the ozonizer 106ox to generate ozone gas, and ozone gas can be supplied into the processing chamber 16 by opening the opening / closing valve Vox3. If the oxygen gas is supplied from the second oxygen gas supply pipe 110ox during the supply of the ozone gas into the processing chamber 16, the ozone gas supplied into the processing chamber 16 is diluted with the oxygen gas, and the ozone gas concentration Can be adjusted.

  The reaction gas supply system (mainly oxygen gas supply source 100ox, first oxygen gas supply pipe 104ox, ozonizer 106ox, flow controller 108ox, ozone gas supply pipe 90ox, open / close valve Vox3, second oxygen gas supply pipe 110ox, and flow controller 112ox) A reaction gas supply line).

<Purge gas supply system>
Further, an N ₂ gas supply source 100p for supplying N ₂ gas as a purge gas is provided outside the processing chamber 16. The upstream end of the purge gas supply pipe 120 is connected to the N ₂ gas supply source 100p. The downstream end of the purge gas supply pipe 120 is branched into three lines, that is, a first purge gas supply pipe 120h, a second purge gas supply pipe 120s, and a third purge gas supply pipe 120ox.

The downstream end of the first purge gas supply pipe 120h, the second purge gas supply pipe 120s, and the third purge gas supply pipe 120ox is an open / close valve for the first source gas supply pipe 90h, the second source gas supply pipe 90s, and the ozone gas supply pipe 90ox. It is connected to the downstream side of Vh3, Vs3, and Vox3, respectively.
The first purge gas supply pipe 120h, the second purge gas supply pipe 120s, the third purge gas supply pipe 120Ox, flow controller 122h as a flow rate control means for controlling the supply flow rate of N ₂ gas, 122s, and 122Ox, the N ₂ gas Open / close valves Vh4, Vs4, and Vox4 for controlling the supply are provided.

Mainly, N ₂ gas supply source 100p, purge gas supply pipe 120, first purge gas supply pipe 120h, second purge gas supply pipe 120s, third purge gas supply pipe 120ox, flow rate controllers 122h, 122s, 122ox, open / close valves Vh4, Vs4, Vox4 constitutes a purge gas supply system (purge gas supply line).

<Vent (bypass) system>
A first vent pipe 130h, a second vent pipe 130s, and a third vent pipe are disposed upstream of the open / close valves Vh3, Vs3, and Vox3 of the first source gas supply pipe 90h, the second source gas supply pipe 90s, and the ozone gas supply pipe 90ox. The upstream end portions of 130 ox are connected to each other. Further, the downstream end portions of the first vent pipe 130h, the second vent pipe 130s, and the third vent pipe 130ox are unified so as to be merged to form the vent pipe 130. The vent pipe 130 is a raw material recovery trap 46 of the exhaust pipe 132. It is connected to the upstream side.

  The first vent pipe 130h, the second vent pipe 130s, and the third vent pipe 130ox are provided with open / close valves Vh5, Vs5, and Vox5 for controlling gas supply, respectively.

  In the above configuration, the gas flowing through the first source gas supply pipe 90h, the second source gas supply pipe 90s, and the ozone gas supply pipe 90ox by closing the on-off valves Vh3, Vs3, and Vox3 and opening the on-off valves Vh5, Vs5, and Vox5. Without being supplied into the processing chamber 16, the processing chamber 16 can be bypassed and exhausted out of the processing chamber 16.

  The first purge gas supply pipe 120h, the second purge gas supply pipe 120s, and the third purge gas supply pipe 120ox are upstream of the on-off valves Vh4, Vs4, and Vox4 and downstream of the flow rate controllers 122h, 122s, and 122ox. The fourth vent pipe 138h, the fifth vent pipe 138s, and the sixth vent pipe 138ox are connected to each other.

  The downstream ends of the fourth vent pipe 138h, the fifth vent pipe 138s, and the sixth vent pipe 138ox are unified so as to join together to form the vent pipe 138. The vent pipe 138 is more than the raw material recovery trap 46 of the exhaust pipe 132. It is connected downstream and upstream of the vacuum pump 48. The fourth vent pipe 138h, the fifth vent pipe 138s, and the sixth vent pipe 138ox are provided with open / close valves Vh6, Vs6, and Vox6 for controlling gas supply, respectively.

In the above configuration, the on-off valves Vh4, Vs4, and Vox4 are closed and the on-off valves Vh6, Vs6, and Vox6 are opened, so that N flows through the first purge gas supply pipe 120h, the second purge gas supply pipe 120s, and the third purge gas supply pipe 120ox. It is possible to bypass the processing chamber 16 without supplying the _two gases into the processing chamber 16 and exhaust the gas to the outside of the processing chamber 16.

By closing the on-off valves Vh3, Vs3, Vox3 and opening the on-off valves Vh5, Vs5, Vox5, the gas flowing in the first source gas supply pipe 90h, the second source gas supply pipe 90s, and the ozone gas supply pipe 90ox The processing chamber 16 is bypassed without being supplied into the processing chamber 16 and exhausted to the outside of the processing chamber 16. In this case, N ₂ gas is introduced into the first source gas supply pipe 90h, the second source gas supply pipe 90s, and the ozone gas supply pipe 90ox by opening the on-off valves Vh4, Vs4, and Vox4. Is set to be purged.

The open / close valves Vh6, Vs6, and Vox6 are set so as to perform the reverse operation of the open / close valves Vh4, Vs4, and Vox4. When the N ₂ gas is not supplied into each source gas supply pipe, the processing chamber 16 is provided. N ₂ gas is exhausted by bypass.

  Mainly, the first vent pipe 130h, the second vent pipe 130s, the third vent pipe 130ox, the vent pipe 130, the fourth vent pipe 138h, the fifth vent pipe 138s, the sixth vent pipe 138ox, the vent pipe 138, the open / close valve Vh5. , Vs5, Vox5 and the open / close valves Vh6, Vs6, Vox6 constitute a vent system (vent line).

<Controller>
The substrate processing apparatus according to the present embodiment includes a controller 150 that controls the operation of each unit of the substrate processing apparatus. The controller 150 includes a gate valve 34, a lifting mechanism 24, a transport robot 38, a heater 22, a pressure regulator (APC) 44, vaporizers 76h and 76s, an ozonizer 106ox, a vacuum pump 48, open / close valves Vh1 to Vh6, Vs1 to Vs6, Operations of Vox3 to Vox6, liquid flow rate controllers 78h and 78s, flow rate controllers 102h, 102s, 122h, 122s, 108ox, 112ox, 122ox, and the like are controlled.

<Liquid material flow control>
Next, liquid material supply flow rate control by the LMFCs 78h and 78s will be described.
FIG. 4 is a diagram illustrating the supply timing of the liquid raw material (the first liquid raw material and the second liquid raw material). FIG. 4A is a diagram showing the supply timing of the liquid source used in the present embodiment, and FIG. 4B is a diagram showing the supply timing of the conventional liquid source for comparison. In each figure, the horizontal axis indicates time, and the vertical axis indicates the flow rate of the liquid raw material. Moreover, among the flow rate changes of the liquid raw material shown in the figure, a broken line indicates a set value (set flow rate) and a solid line indicates an actual flow rate. Since the LMFCs 78h and 78s have the same configuration except that the target liquid raw materials are different, the LMFC 78h will be described as a representative example.

As shown in FIG. 4A, the LMFC 78h sets the set value of the liquid material flow rate to a desired set value (first set value) at a desired timing, and sets the liquid source (Hf source) used for film formation, The required flow rate (f1) is controlled to flow to the vaporization chamber 82h of the vaporizer 76h at a desired supply timing. Other than the desired supply timing, the flow rate of the liquid raw material is not set to 0 (z), and the second set value is set, and control is performed so that the minimum flow rate (f2) is always supplied. For this reason, when the first liquid material is supplied to the vaporization chamber 82h, the liquid material having the required flow rate (f1) is actually set after the set value is set as the first set value (from the time of inputting the first set value). The response time (d1) until it is supplied (the actual flow rate reaches the set value) is shortened. That is, it is possible to reduce the difference between the desired supply timing and the actual supply of the liquid material at the required flow rate (f1) to the vaporizer 76h.
The minimum flow rate (f2) is a value smaller than the required flow rate (f1). The minimum flow rate that can be controlled in the LMFC 78h is preferable.

As shown in FIG. 4B, when the flow rate of the liquid source to be supplied is set to 0 (z) at a timing other than the desired supply timing, the set value is set as the first set value (the first set value). The response time (d2) from when the value is input to when it is actually supplied (the actual flow rate reaches the set value) becomes longer.
In the case of FIG. 4 (a), the delay of the response time from when the first set value is input until the actual flow rate reaches the first set value can be shortened by 5 to 15 seconds compared to the case of FIG. 4 (b). Was confirmed (d2-d1 = 5 to 15 seconds).

(2) Substrate Processing Step Next, as a step of manufacturing a semiconductor device (device) according to an embodiment of the present invention, a substrate processing step of forming a thin film on a wafer using the above-described substrate processing apparatus will be described. This will be described with reference to FIG. FIG. 5 is a flowchart of the substrate processing process according to the embodiment of the present invention. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 150.

<Substrate Loading Step (S1), Substrate Placement Step (S2)>
First, the elevating mechanism 24 is operated to lower the support base 18 to the wafer transfer position shown in FIG. Then, the gate valve 34 is opened to allow the processing chamber 16 and the transfer chamber 36 to communicate with each other. Then, the wafer 14 to be processed is loaded from the transfer chamber 36 into the processing chamber 16 with the transfer robot 38 supported by the transfer arm 38a (S1). The wafer 14 carried into the processing chamber 16 is temporarily placed on lift pins 28 protruding from the upper surface of the support base 18. When the transfer arm 38a of the transfer robot 38 returns from the processing chamber 16 to the transfer chamber 36, the gate valve 34 is closed.

  Subsequently, the elevating mechanism 24 is operated to raise the support base 18 to the wafer processing position shown in FIG. As a result, the lift pins 28 are buried from the upper surface of the support table 18, and the wafer 14 is placed on the susceptor 20 on the upper surface of the support table 18 (S2).

<Pressure adjusting step (S3), temperature raising step (S4)>
Subsequently, the pressure regulator (APC) 44 performs control so that the pressure in the processing chamber 16 becomes a predetermined processing pressure (S3). Further, the power supplied to the heater 22 is adjusted, the temperature of the wafer 14 is raised, and the surface temperature of the wafer 14 is controlled to be a predetermined processing temperature (S4).

In the substrate loading step (S1), the substrate placement step (S2), the pressure adjustment step (S3), the temperature raising step (S4), and the substrate unloading step (S10) described later, while operating the vacuum pump 48, The on-off valves Vh3, Vs3, and Vox3 are closed, and the on-off valves Vh4, Vs4, and Vox4 are opened, so that the N ₂ gas is always allowed to flow into the processing chamber 16. Thereby, it is possible to suppress adhesion of particles on the wafer 14. The vacuum pump 48 is always operated at least from the substrate carry-in process (S1) to the substrate carry-out process (S10) described later.

In parallel with the steps S1 to S4, a first source gas (Hf source gas) obtained by vaporizing the first liquid source (Hf source) is generated (preliminarily vaporized).
The on-off valve Vh2 is opened while the on-off valve Vh3 is closed, and the on-off valve Vh1 is opened while supplying the carrier gas to the vaporizer 76h. In this state, the pressurized gas is supplied from the pressurized gas supply pipe 72h, the first liquid material is pumped (supplied) from the first liquid material supply source 70h to the vaporizer 76h, and the first liquid material is supplied by the vaporizer 76h. It vaporizes and the 1st source gas is generated. At this time, the vaporizing chamber 82h is supplied with a small amount of the first liquid raw material whose flow rate is adjusted to the second set value by the LMFC 78h.

In this preliminary vaporization step, the processing chamber 16 is bypassed without supplying the first source gas into the processing chamber 16 by opening the on-off valve Vh5 while operating the vacuum pump 48 and keeping the on-off valve Vh3 closed. And exhaust. In the present embodiment, Hf [OC (CH ₃ ) ₂ CH ₂ OCH ₃ ] ₄ (hereinafter abbreviated as Hf (MMP) ₄ ) is used as the first liquid source (Hf source).

The Hf raw material is not limited to Hf (MMP) ₄ , and for example, TEMAH (tetrakisethylmethylaminohafnium, Hf (NEtMe) ₄ ), tetraxosteric tributyl hafnium (Hf (O-tBu) ₄ ), TDMAH ( Tetrakisdimethylaminohafnium, Hf (NMe ₂ ) ₄ ), TDEAH (tetrakisdiethylaminohafnium, Hf (NEt ₂ ) ₄ ), hafnium tetrachloride (HfCl ₄ ) and the like can be used.
In the above chemical formula, “Et” represents C ₂ H ₅ , “Me” represents CH ₃ , and “O-tBu” represents OC (CH ₃ ) ₃ .

  At this time, a second source gas (Si source gas) obtained by vaporizing the second liquid source (Si source) is also generated (preliminary vaporization). The on-off valve Vs2 is opened while the on-off valve Vs3 is closed, and the on-off valve Vs1 is opened while supplying the carrier gas to the vaporizer 76s. In this state, the pressure gas is supplied from the pressure gas supply pipe 72s, the second liquid material is pressure-supplied (supplied) from the second liquid material supply source 70s to the vaporizer 76s, and the second liquid material is supplied by the vaporizer 76s. The second source gas is generated by vaporization. At this time, a small amount of the second liquid material whose flow rate has been adjusted by the LMFC 78s to the second set value is supplied to the vaporizing chamber 82s.

In this preliminary vaporization step, the process chamber 16 is bypassed without supplying the second source gas into the process chamber 16 by opening the open / close valve Vs5 while operating the vacuum pump 48 and keeping the open / close valve Vs3 closed. And exhaust. In the present embodiment, Si [OC (CH ₃ ) ₂ CH ₂ OCH ₃ ] ₄ (hereinafter abbreviated as Si (MMP) ₄ ) is used as the second liquid source (Si source).

The silicon raw material is not limited to Si (MMP) ₄ , and for example, TEOS (tetraethoxysilane, Si (OEt) ₄ ), TDMS (trisdimethylaminosilane, HS (NMe ₂ ) ₃ ) or the like can be used. .
In the above chemical formula, “Et” represents C ₂ H ₅ and “Me” represents CH ₃ .

  Further, at this time, it is preferable to generate ozone gas as a reactant. That is, oxygen gas is supplied from the oxygen gas supply source 100ox to the ozonizer 106ox, and ozone gas is generated by the ozonizer 106ox. At this time, the open / close valve Vox5 is opened while operating the vacuum pump 48 while the open / close valve Vox3 is closed, thereby bypassing and exhausting the process chamber 16 without supplying ozone gas into the process chamber 16.

  It takes a predetermined time to generate the first source gas and the second source gas in a stable state with the vaporizers 76h and 76s, or to generate the ozone gas in a stable state with the ozonizer 106ox. That is, the raw material gas and the ozone gas are supplied in an unstable state at the initial generation of the raw material gas and the ozone gas.

For this reason, in the present embodiment, the first source gas, the second source gas, and the ozone gas are generated in advance so that they can be stably supplied, and the open / close valves Vh3, Vh5, Vs3, Vs5, Vox3, and Vox5 are opened and closed. By switching, the flow paths of the first source gas, the second source gas, and the ozone gas are switched. As a result, the switching of the open / close valve is preferable because the stable supply of the first source gas, the second source gas, and the ozone gas into the processing chamber 16 can be started or stopped quickly.
Furthermore, in this embodiment, the liquid raw material flow rate of the LMFCs 78h and 78s is supplied to the vaporizing chambers 82h and 82s by supplying a small amount of liquid raw material whose flow rate is adjusted in advance to the second set value by the LMFCs 78h and 78s. The time required until the liquid material having a desired flow rate is actually supplied to the vaporization chambers 82h and 82s after the set value is set as the desired set value (first set value) is shortened.

<Raw material gas supply step (S5)>
Subsequently, after changing the set values of the LMFCs 78h, 78s to desired set values (first set values), the open / close valves Vh4, Vh5, Vs4, Vs5 are closed, the open / close valves Vh3, Vs3 are opened, and the processing chamber is opened. The supply of the first source gas and the second source gas into 16 is started. The first source gas and the second source gas are dispersed by the shower head 52 and uniformly supplied onto the wafer 14 in the processing chamber 16. Excess first source gas and second source gas flow in the exhaust duct 62 and are exhausted to the exhaust port 40.

At the time of supplying the first source gas and the second source gas into the processing chamber 16, in order to prevent the first source gas and the second source gas from entering the ozone gas supply pipe 90 ox, In order to promote the diffusion of the first source gas and the second source gas, it is preferable that the open / close valve Vox4 is kept open and the N ₂ gas is always allowed to flow into the processing chamber 16.

  The on-off valves Vh3 and Vs3 are opened, the supply of the first source gas and the second source gas is started, and after a predetermined time has elapsed, the on-off valves Vh3 and Vs3 are closed and the on-off valves Vh4, Vh5, Vs4 and Vs5 are opened. The supply of the first source gas and the second source gas into 16 is stopped. At the same time, the on-off valves Vh1, Vs1 are closed, and the supply of the first liquid source and the second liquid source to the vaporizers 76h, 76s is also stopped.

<Purge process (S6)>
After closing the on-off valves Vh3, Vs3 and stopping the supply of the first source gas and the second source gas into the processing chamber 16, the on-off valves Vh4, Vs4, Vox4 are kept open, Continue to supply N ₂ gas. N ₂ gas is supplied into the processing chamber 16 through the shower head 52, flows in the exhaust duct 62, and is exhausted to the exhaust port 40. In this manner, the inside of the processing chamber 16 is purged with the N ₂ gas, and the first source gas and the second source gas remaining in the processing chamber 16 are removed.

<Oxidant supply step (S7)>
When the purge in the processing chamber 16 is completed, the on-off valves Vox4 and Vox5 are closed, the on-off valve Vox3 is opened, and supply of ozone gas as an oxidant into the processing chamber 16 is started. The ozone gas is dispersed by the shower head 52 and is uniformly supplied onto the wafer 14 in the processing chamber 16. Excess ozone gas and reaction byproducts flow through the exhaust duct 62 and are exhausted to the exhaust port 40.

When supplying ozone gas into the processing chamber 16, the ozone gas is prevented from entering the first source gas supply pipe 90h and the second source gas supply pipe 90s, and the diffusion of ozone gas in the processing chamber 16 is promoted. As described above, it is preferable that the open / close valves Vh4 and Vs4 remain open and the N ₂ gas always flows into the processing chamber 16.

  When a predetermined time has elapsed after opening the opening / closing valve Vox3 and starting the supply of ozone gas, the opening / closing valve Vox3 is closed and the opening / closing valves Vox4, Vox5 are opened to stop the supply of ozone gas into the processing chamber 16.

<Purge process (S8)>
After closing the on-off valve Vox3 and stopping the supply of ozone gas into the processing chamber 16, the on-off valves Vh4, Vs4, and Vox4 are kept open and the supply of N ₂ gas into the processing chamber 16 is continued. . N ₂ gas is supplied into the processing chamber 16 through the shower head 52, flows in the exhaust duct 62, and is exhausted to the exhaust port 40. In this manner, the inside of the processing chamber 16 is purged with N ₂ gas, and ozone gas and reaction byproducts remaining in the processing chamber 16 are removed.

  Note that the first source gas and the second source gas are generated (preliminarily vaporized) in parallel with the oxidizing agent supply step (S7) or the purge step (S8).

<Repeating step (S9)>
Then, the steps S5 to S8 are set as one cycle, and this cycle is repeated a predetermined number of times, whereby a hafnium silicate (HfSiOx) thin film having a desired film thickness is formed on the wafer 14 (thin film forming step).

  In the source gas supply step (S5), the example in which the first source gas and the second source gas are supplied simultaneously has been described. However, the first source gas and the second source gas may be supplied separately. That is, a first source gas supply step (S5h) for supplying a first source gas, a purge step (S6h), a second source gas supply step (S5s) for supplying a second source gas, a purge step (S6s), an oxidant The supply step (S7) and the purge step (S8) may be one cycle, and this cycle may be repeated a plurality of times to form a hafnium silicate (HfSiOx) thin film having a desired thickness on the wafer.

<Substrate unloading step (S10)>
Thereafter, the wafer 14 on which the HfSiOx film having a desired film thickness is formed is transferred from the processing chamber 16 by a procedure reverse to the procedure shown in the substrate loading step (S1) and the substrate placement step (S2). It is carried out into the chamber 36, and the substrate processing process concerning this embodiment is completed.

  In the case where the thin film forming step is performed by the CVD method, the processing temperature is controlled so as to be a temperature range in which the source gas is self-decomposed. In this case, in the source gas supply step (S 5), the source gas is self-decomposed and a thin film of about 1 to several tens of atomic layers is formed on the wafer 14. In the oxidant supply step, impurities such as C and H are removed from a thin film of about 1 to several tens of atomic layers formed on the wafer 14 by ozone gas.

  Further, when the thin film forming process is performed by the ALD method, the processing temperature is controlled so as to be a temperature range in which the source gas is not self-decomposed. In this case, the source gas is adsorbed onto the wafer 14 in the source gas supply step. In the oxidant supply step, the raw material adsorbed on the wafer 14 reacts with ozone gas to form a thin film of less than one atomic layer on the wafer 14. At this time, impurities such as C and H to be mixed into the thin film can be desorbed by ozone gas.

In the processing furnace of the present embodiment, as a processing condition when processing a substrate by the CVD method, for example, when forming an HfSiOx film, a processing temperature: 390 to 450 ° C., a processing pressure: 50 to 400 Pa, 1 raw material (Hf (MMP) ₄ ) supply flow rate: 0.01 to 0.2 g / min, second raw material (Si (MMP) ₄ ) supply flow rate: 0.01 to 0.2 g / min, oxidizing agent (ozone gas) Supply flow rate: 100 to 3000 sccm is exemplified.

In the processing furnace of the present embodiment, as a processing condition when processing a substrate by ALD, for example, when forming an HfSiOx film, processing temperature: 200 to 350 ° C., processing pressure: 50 to 400 Pa, 1 raw material (Hf (MMP) ₄ ) supply flow rate: 0.01 to 0.2 g / min, second raw material (Si (MMP) ₄ ) supply flow rate: 0.01 to 0.2 g / min, oxidizing agent (ozone gas) Supply flow rate: 100 to 3000 sccm is exemplified.

[Second Embodiment]
Next, a second embodiment will be described.
FIG. 6A is a diagram illustrating the supply timing of the liquid material by the LMFCs 78h and 78s used in the second embodiment. Since the LMFC 78h and the LMFC 78s have the same configuration except that the liquid raw materials to be controlled are different, the LMFC 78h will be described as a representative example.

  As shown in FIG. 6 (a), the LMFC 78h sets the set value of the liquid material flow rate to a desired set value (first set value) at a desired timing, and sets the liquid material (Hf material) used for film formation, The required flow rate (f1) is controlled to flow to the vaporization chamber 82h of the vaporizer 76h at a desired supply timing. Further, the LMFC 78h precedes a desired supply timing by a predetermined time (for example, about 10 to 20 seconds), and performs control so that the set value of the liquid material flow rate is set to the second set value and the minimum flow rate (f2) is allowed to flow. For this reason, when the liquid raw material is supplied to the vaporization chamber 82h, the liquid flow rate of the necessary flow rate (f1) is actually supplied after setting the set value as the first set value (from the time when the first set value is input). The response time (d3) until the actual flow rate reaches the set value is shortened. That is, it is possible to reduce the difference between the desired supply timing and the actual supply of the liquid material at the required flow rate (f1) to the vaporization chamber 82h.

In addition, the liquid material is not always flowed at the minimum flow rate (f2) at a time other than the desired supply timing, but the set value is set to the second set value in advance by a predetermined time slightly before the desired supply timing. By controlling so that the response time (d3) is shortened, the consumption of the raw material used other than the film formation process can be reduced.
The time for which the set value is set to the second set value prior to the desired supply timing can be appropriately changed depending on the viscosity of the raw material to be used.

[Third Embodiment]
Next, a third embodiment will be described.
FIG. 6B is a diagram illustrating the supply timing of the liquid material (Hf material) by the LMFCs 78h and 78s used in the third embodiment. Since the LMFC 78h and the LMFC 78s have the same configuration except that the liquid raw materials to be controlled are different, the LMFC 78h will be described as a representative example.

As shown in FIG. 6B, the LMFC 78h sets the liquid raw material flow rate setting value to a desired setting value (first setting value) at a desired timing, and sets the liquid raw material (Hf raw material) used for film formation, The required flow rate (f1) is controlled to flow to the vaporization chamber 82h of the vaporizer 76h at a desired supply timing. Further, the LMFC 78h precedes a desired supply timing by a predetermined time (for example, about 10 to 20 seconds), and performs control so that the set value of the liquid material flow rate is set to the second set value and the minimum flow rate (f2) is allowed to flow. In the present embodiment, the necessary flow rate (f1) flows after the first liquid material is actually supplied to the vaporization chamber 82h at the minimum flow rate (f2) according to the second set value. That is, control is performed so that the flow rate (actual flow rate) of the liquid material that actually flows by changing the set value in two stages is changed in two stages, f2 → f1.
In the second embodiment, control is performed so that the set value is changed in two stages and the actual flow rate is changed in one stage.

  Thus, since the liquid material is actually flowed at the minimum flow rate (f2) prior to the change of the set value of the liquid material flow rate to the first set value, the set value is set as the first set value. The response time (d4) until the liquid material at the necessary flow rate (f1) is actually supplied (from the time when the first set value is input) until the actual flow rate reaches the set value is further shortened. That is, it is possible to further reduce the deviation between the desired supply timing and the actual supply of the required flow rate (f1) of liquid material to the vaporization chamber 82h.

In the above-described embodiment, the case where a hafnium silicate (HfSiOx) film is formed has been described. It is also possible to form a zirconium oxide (ZrO ₂ ) film using the same sequence as in the above embodiment.

  In the above-described embodiment, the response when the initial value is changed from the flow rate 0 (or almost 0) to the desired setting value and the initial value is changed from the arbitrary flow rate (not 0) state to the desired setting value. The difference with the response of the case is utilized, and the effect becomes more remarkable as the viscosity of the liquid raw material is larger.

[Preferred embodiment of the present invention]
Hereinafter, other preferred embodiments of the present invention will be additionally described.

  According to one aspect of the present invention, a processing chamber for processing a substrate, a flow rate controller for controlling a flow rate of a liquid material, a vaporizer for vaporizing a liquid material whose flow rate is controlled by the flow rate controller, and the vaporizer When setting the flow rate setting value of the liquid source in the flow rate controller to the first flow rate setting value at the time of substrate processing, the source gas supply pipe for supplying the source gas that vaporizes the liquid source into the processing chamber And a controller that controls the flow rate controller to set the second flow rate setting value smaller than the first flow rate setting value once in advance.

  According to another aspect of the present invention, a processing chamber for processing a substrate, a flow rate controller for controlling the flow rate of the liquid material, a vaporizer for vaporizing the liquid material whose flow rate is controlled by the flow rate controller, When a raw material gas supply pipe for supplying a raw material gas obtained by vaporizing a liquid raw material with a vaporizer into the processing chamber and a flow rate setting value of the liquid raw material in the flow rate controller are set to a first flow rate setting value during substrate processing And a controller that controls the flow rate controller to set the second flow rate setting value, which is a minimum flow rate setting value that can be set once by the flow rate controller, prior to that. Provided.

12 processing container 14 wafer 16 processing chamber 18 support 20 susceptor 50 gas introduction port 70h liquid source supply source 70s liquid source supply source 76h vaporizer 76s vaporizer 78h liquid flow rate controller 78s liquid flow rate controller 82h vaporization chamber 82s vaporization chamber 150 controller

Claims (1)

A processing chamber for processing the substrate;
A flow controller for controlling the flow rate of the liquid raw material;
A vaporizer for vaporizing a liquid material whose flow rate is controlled by the flow rate controller;
A source gas supply pipe for supplying a source gas obtained by vaporizing a liquid source with the vaporizer into the processing chamber;
When setting the flow rate setting value of the liquid material in the flow rate controller to the first flow rate setting value at the time of substrate processing, a second flow rate setting that is once smaller than the first flow rate setting value is preceded by that. A controller that controls the flow controller to set the value;
A substrate processing apparatus comprising:

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