JP2011060884A - Semiconductor light-emitting device and lighting fixture for vehicle - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device changing the color of emitted light while suppressing a change in the orientation characteristics. <P>SOLUTION: The semiconductor light-emitting device includes: a semiconductor light-emitting element 50 emitting excited light L<SB>11</SB>; and a phosphor-containing member 110 containing phosphor and generating fluorescence when excited by the excited light L<SB>11</SB>from the semiconductor light-emitting element 50. The phosphor-containing member 110 is formed like a disk and rotatably supported by a rotary shaft 120. The phosphor-containing member 110 has a phosphor concentration distribution in the circumferential direction. A convex lens-shaped portion (convex lens part 112) projecting reverse to the semiconductor light-emitting element 50 is provided on the top surface of the phosphor-containing member 110. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a semiconductor light emitting device and a vehicle lamp, and more particularly to a semiconductor light emitting device including a phosphor and a semiconductor light emitting element and a vehicle lamp using the semiconductor light emitting device.

  A semiconductor light-emitting element such as a light-emitting diode (LED) has an advantage that it is small in size, consumes less power, and can stably emit light with high luminance. For this reason, in recent years, there has been a movement to replace lighting fixtures such as incandescent lamps and fluorescent lamps with lighting fixtures using a light emitting device (semiconductor light emitting device) including a semiconductor light emitting element such as an LED.

  When comparing a semiconductor light emitting device with a conventional light emitting device, the semiconductor light emitting device is superior in terms of life and stability. In particular, since the vehicular lamp is required to emit light stably over a long period of time from the viewpoint of safety among lighting fixtures, it can be said that the merit of using the semiconductor light-emitting device for the vehicular lamp is great.

  Another advantage of the semiconductor light emitting device is that the color of illumination light emitted from the light emitting device can be adjusted to a desired color.

  Conventionally known as such a semiconductor light emitting device is a light emitting device capable of changing the color of emitted illumination light by combining a semiconductor light emitting element and a phosphor (for example, see Patent Document 1). .

  Patent Document 1 describes a light source device (semiconductor light emitting device) in which two phosphor-containing members in which phosphors partially exist are placed on top of each other in the light emission direction of an LED light source. In this light source device, the area ratio of the phosphor visible from the LED light source can be changed by adjusting the angle and the amount of movement of the phosphor-containing member. Thereby, the color of the light emitted from the light source device can be changed to a desired color.

JP 2006-332384 A

  However, in the configuration of the conventional light source device (semiconductor light-emitting device) described in Patent Document 1, the alignment characteristics of illumination light emitted from the light source device (semiconductor light-emitting device) change remarkably as the emission color changes. There is a problem. For this reason, when such a light source device (semiconductor light-emitting device) is used for a vehicular lamp, there arises a problem that unevenness of color occurs in the irradiating part or the controllability of the emission color is limited.

  The present invention has been made in order to solve the above-described problems, and one object of the present invention is to provide a semiconductor light emitting device capable of changing a light emission color while suppressing a change in alignment characteristics, and It is to provide a vehicular lamp.

  In order to achieve the above object, a semiconductor light-emitting device according to a first aspect of the present invention includes a semiconductor light-emitting element that emits excitation light and a phosphor, and fluorescence that emits fluorescence when excited by excitation light from the semiconductor light-emitting element. A body-containing member. The phosphor-containing member has a phosphor concentration distribution and at least a lens shape.

  In the semiconductor light-emitting device according to the first aspect, as described above, the configuration including the semiconductor light-emitting element and the phosphor-containing member having the phosphor concentration distribution is less affected by temperature and change over time, The emission color can be changed to a desired color with a simple configuration. Further, in the first aspect, as described above, it is possible to suppress a change in the orientation characteristics by providing at least a part of the phosphor-containing member with a lens shape.

  Thus, in the semiconductor light emitting device according to the first aspect, by configuring as described above, it is possible to change the emission color while suppressing the change in the alignment characteristics. For this reason, even when the semiconductor light-emitting device according to the first aspect is used for a vehicular lamp, it is possible to suppress the occurrence of uneven color in the irradiating portion and to suppress the controllability of the emission color. be able to.

  Note that, in the semiconductor light emitting device according to the first aspect configured as described above, the emitted light color can be easily changed to a desired color, so this semiconductor light emitting device was used as indoor lighting or a decorative lighting fixture. In some cases, effective lighting can be performed. In addition, when used as a vehicular lamp, it is possible to emit light of a color according to the surrounding weather, brightness, and the like, so that effects such as improved visibility and reduced driver fatigue can be expected.

  In the semiconductor light-emitting device according to the first aspect, preferably, at least one of the semiconductor light-emitting element and the phosphor-containing member is movable so that the irradiation position of the excitation light in the phosphor-containing member changes. With this configuration, it is possible to easily change (adjust) the emission color, and to easily suppress changes in orientation characteristics associated with changing (adjusting) the emission color.

  In the semiconductor light emitting device according to the first aspect, the semiconductor light emitting element is preferably a semiconductor laser element. With this configuration, since the light output per element can be increased, a high-power semiconductor light emitting device can be obtained. The semiconductor light emitting element may be a light emitting element other than the semiconductor laser element. For example, a light emitting diode element may be used as the semiconductor light emitting element.

  As the semiconductor light emitting element, a light emitting element having an emission peak wavelength of 380 nm to 480 nm can be preferably used. If a semiconductor light emitting device having an emission peak wavelength in such a range is used, it is possible to suppress a decrease in emission efficiency due to the emission peak wavelength being out of the above range. When a semiconductor laser element is used as the semiconductor light emitting element, the emission peak wavelength is preferably sufficiently shorter than the blue wavelength region. For this reason, 380 nm to 420 nm is a more preferable range as the emission peak wavelength in this case.

  In the semiconductor light emitting device according to the first aspect, preferably, the phosphor-containing member is rotatably supported. If comprised in this way, since the irradiation position of the excitation light in a fluorescent substance containing member can be changed into a desired position by rotating a fluorescent substance containing member, emission color can be changed to a desired color with a simpler configuration. Can be changed. Moreover, if comprised in this way, size reduction of an apparatus can be achieved easily.

  In this case, the phosphor-containing member preferably has a phosphor concentration distribution in the rotation direction. If comprised in this way, a luminescent color can be changed into a desired color more easily.

  In the semiconductor light emitting device according to the first aspect, the lens shape is preferably a convex lens shape protruding to the opposite side of the semiconductor light emitting element. If comprised in this way, the illumination emitted light (illumination light) from a fluorescent substance containing member can be brought close to parallel light easily. Thereby, for example, when used as a vehicle headlamp (vehicle lamp), a semiconductor light emitting device that emits suitable light is obtained.

  In the semiconductor light emitting device according to the first aspect, the lens shape is preferably formed integrally with the phosphor-containing member. If comprised in this way, a lens shape can be easily given to a fluorescent substance containing member.

  In the semiconductor light emitting device according to the first aspect, the phosphor-containing member is preferably configured to include a plurality of types of phosphors having emission peak wavelengths different from each other.

  The semiconductor light emitting device according to the first aspect may have a single phosphor-containing member. In this case, a single phosphor-containing member may include a plurality of types of phosphors.

  The semiconductor light emitting device according to the first aspect may include a plurality of the phosphor-containing members. In this case, the plurality of phosphor-containing members are arranged so as to overlap each other in the excitation light emission direction, and at least the phosphor-containing member arranged at the position farthest from the semiconductor light emitting element has a lens shape. It is preferable to have.

  Further, in this case, the plurality of phosphor-containing members include a plurality of types of phosphors having different emission peak wavelengths, and each phosphor-containing member is configured to include one or more types of phosphors. May be.

  In the configuration including the plurality of phosphor-containing members, preferably, the phosphor contained in the phosphor-containing member far from the semiconductor light-emitting element is compared to the phosphor contained in the phosphor-containing member close to the semiconductor light-emitting element, The emission peak wavelength is short. If comprised in this way, since reabsorption of the fluorescence radiate | emitted from fluorescent substance can be suppressed, luminous efficiency can be improved.

  In the semiconductor light emitting device according to the first aspect, preferably, the phosphor contained in the phosphor-containing member is a nitride-based phosphor or an oxynitride-based phosphor. Since such a phosphor is thermally and chemically stable, it can be suitably used as a phosphor for changing the emission color.

  A vehicle lamp according to a second aspect of the present invention is a vehicle lamp provided with the semiconductor light emitting device according to the first aspect. If comprised in this way, the vehicle lamp which can change luminescent color can be obtained easily, suppressing the change of an orientation characteristic. Moreover, if comprised in this way, the vehicle lamp which was excellent in controllability of emitted light color with which the uneven color of illumination light was suppressed can be obtained easily.

  As described above, according to the present invention, it is possible to easily obtain a semiconductor light-emitting device and a vehicle lamp that can change the emission color while suppressing a change in orientation characteristics.

It is the perspective view which showed typically the structure of the light source part of the semiconductor light-emitting device by 1st Embodiment of this invention. 1 is a block diagram showing a configuration of a semiconductor light emitting device according to a first embodiment of the present invention. It is the top view which showed the structure of the fluorescent substance containing member of the semiconductor light-emitting device by 1st Embodiment of this invention. It is sectional drawing which showed a part of light source part of the semiconductor light-emitting device by 1st Embodiment of this invention. It is a side view of the light source part of the semiconductor light-emitting device by 1st Embodiment of this invention. It is a perspective view for demonstrating the formation method of the fluorescent substance containing member of the semiconductor light-emitting device by 1st Embodiment of this invention. It is a top view for demonstrating the formation method of the fluorescent substance containing member of the semiconductor light-emitting device by 1st Embodiment of this invention. It is the perspective view which showed typically the structure of the light source part of the semiconductor light-emitting device by 2nd Embodiment of this invention. It is the top view which showed the structure of the fluorescent substance containing member which does not have the lens shape of the semiconductor light-emitting device by 2nd Embodiment of this invention. It is the perspective view which showed typically the structure of the light source part of the semiconductor light-emitting device by 3rd Embodiment of this invention. It is the top view which showed the structure of the fluorescent substance containing member which does not have the lens shape of the semiconductor light-emitting device by 3rd Embodiment of this invention. It is the schematic diagram which showed the structure of the vehicle headlamp by 4th Embodiment of this invention. It is the top view which showed the lens shape of the fluorescent substance containing member of the semiconductor light-emitting device by the modification of this invention. It is the perspective view which showed the lens shape of the fluorescent substance containing member of the semiconductor light-emitting device by the modification of this invention.

  DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments embodying the present invention will be described in detail with reference to the drawings.

(First embodiment)
FIG. 1 is a perspective view schematically showing a configuration of a light source unit of the semiconductor light emitting device according to the first embodiment of the present invention. FIG. 2 is a block diagram showing a configuration of the semiconductor light emitting device according to the first embodiment of the present invention. FIG. 3 is a plan view showing the configuration of the phosphor-containing member of the semiconductor light emitting device according to the first embodiment of the present invention. 4 and 5 are views for explaining the semiconductor light emitting device according to the first embodiment of the present invention. 4 shows a view of the phosphor-containing member 110 viewed from the upper surface side, and FIG. 5 shows a view of the light source unit 100 constituting the semiconductor light emitting device viewed from the side. First, a semiconductor light emitting device according to a first embodiment of the present invention will be described with reference to FIGS.

The semiconductor light emitting device according to the first embodiment includes a light source unit 100 that emits illumination light L, as shown in FIG. The light source unit 100, as shown in FIG. 1, a semiconductor light emitting element 50 that emits excitation light L _11, and a phosphor-containing member 110 that emits fluorescence by being excited by the excitation light L ₁₁ from the semiconductor light emitting element 50 Contains.

The semiconductor light emitting device 50 is composed of a semiconductor laser device, for example, Al _x Ga _y In _z N (0 ≦ x ≦ 1; 0 ≦ y ≦ 1; 0 ≦ z ≦ 1; x + y + z = 1) -based nitride. The material. When a semiconductor laser element is used for the semiconductor light emitting element 50, it is not preferable for safety to include the laser light as the blue light component in the illumination light L. For this reason, the light emission peak wavelength of the semiconductor light emitting element 50 is shorter than the blue region.

  The phosphor-containing member 110 is formed, for example, by dispersing a phosphor in a resin-based material such as a silicone resin. In the phosphor-containing member 110, at least two kinds of phosphors having different emission peak wavelengths are dispersed so as to have a phosphor concentration distribution.

  The phosphor is a blue phosphor having a peak wavelength in a blue light region, a blue-green phosphor having a peak wavelength in a blue-green region of 480 nm to 520 nm, a green phosphor having a peak wavelength in a green light region of 520 nm to 560 nm, Two or more types capable of emitting white light by color mixing are combined from a yellow phosphor having a peak wavelength in a yellow light region of 560 nm to 600 nm and a red phosphor having a peak wavelength in a red light region of 600 nm to 700 nm.

As such a phosphor, for example, a Ce-activated (Sr, Ca) AlSiN3 phosphor, a Ce-activated Se ₂ Si ₅ N ₈ phosphor, a Eu-activated βSiAlON phosphor, a Yb-activated αSiAlON phosphor, and the like are preferable as the green phosphor. As the yellow phosphor, for example, an Eu activated αSiAlON phosphor, a Ce activated CaAlSiN ₃ phosphor and the like are preferably used. Further, as the red phosphor, for example, an Eu activated (Sr, Ca) AlSiN ₃ phosphor, an Eu activated CaAlSiN ₃ phosphor, an Eu activated Sr ₂ Si ₅ N ₈ phosphor or the like is preferably used, For example, Ce activated JEM phosphor, Ce activated La-n phase phosphor, Eu activated AlN phosphor and the like are preferably used. Further, as the blue-green phosphor, for example, a Ce activated αSiAlON phosphor, an Eu activated (Ba, Sr) ₂ Si ₂ O ₂ N ₂ phosphor or the like is preferably used.

  As shown in FIGS. 1 and 3, the phosphor-containing member 110 is molded into a disk shape having a diameter G (see FIG. 3) of about 10 mm to about 50 mm, for example. A through hole 111 (see FIG. 3) is formed in the central portion of the phosphor-containing member 110. A cylindrical rotation shaft 120 (see FIG. 1) is inserted into the through-hole 111 so as to share the center with the phosphor-containing member 110, and the rotation shaft 120 and the phosphor-containing member 110 are fixed to each other. ing. The diameter of the rotating shaft 120 is, for example, about 1 mm to about 25 mm, and the length of the rotating shaft 120 is, for example, about 5 mm to about 50 mm. Moreover, the thickness of the said fluorescent substance containing member 110 shall be about 1 mm-about 5 mm, for example.

  A single phosphor-containing member 110 is fixed to the rotating shaft 120, and the phosphor-containing member 110 is rotatably supported by the rotating shaft 120.

Further, the phosphor-containing member 110 is arranged so that the excitation light L ₁₁ from the semiconductor light emitting element 50 is irradiated to a part on the back surface (lower surface) side. Specifically, the phosphor-containing member 110 is disposed so that the back surface thereof faces the semiconductor light emitting element 50. The distance h from the semiconductor light emitting element 50 to the phosphor-containing member 110 (see FIG. 5) is, for example, about 1 mm to about 50 mm.

  Here, in the first embodiment, as shown in FIGS. 1 and 4, the phosphor-containing member 110 has a thickness distribution in the direction from the center to the outside (radial direction (R direction)). Yes. This thickness distribution is designed in a lens shape so that the illumination light L emitted from the semiconductor light emitting device (light source unit 100) has a desired orientation characteristic. Specifically, a part of the upper surface (surface opposite to the semiconductor light emitting element 50) of the phosphor-containing member 110 is in the emission direction of the illumination light L (direction opposite to the semiconductor light emitting element 50). It is formed in a protruding convex lens shape. That is, the phosphor-containing member 110 has a configuration in which the convex lens portion 112 is integrally formed on the upper surface (the surface opposite to the semiconductor light emitting element 50).

As shown in FIG. 3, the convex lens portion 112 (convex lens shape) is formed in an annular shape (circular shape) having a width w of about 2 mm to about 10 mm in plan view. Further, the convex lens portion 112 is arranged so that a part thereof is located at a position corresponding to the irradiation region 51 of the excitation light L ₁₁ . For this reason, even when the convex lens portion 112 rotates the disk-shaped phosphor-containing member 110, the excitation light L ₁₁ is always in the region corresponding to the convex lens portion 112 (the back surface region of the phosphor-containing member 110). It is configured to be irradiated. The size of the irradiated region 51 of the excitation light L ₁₁ (diameter g) is, for example, about 1mm~ about 10 mm. The alignment characteristic is preferably parallel light.

  In the first embodiment, the phosphor-containing member 110 includes a plurality (four) of phosphor regions A to D having different phosphor dispersion concentrations and phosphor dispersion ratios. In these phosphor regions A to D, the direction parallel to the radial direction of the phosphor-containing member 110 is the X direction, and the direction parallel to the tangential direction of the phosphor-containing member 110 (see FIG. 2) is the Y direction. Furthermore, it is substantially equally divided in the X direction and the Y direction. Accordingly, the phosphor-containing member 110 is configured to have a phosphor concentration distribution in the circumferential direction (rotation direction).

  In addition to the light source unit 100, the semiconductor light emitting device according to the first embodiment includes a semiconductor light emitting element driving unit 150, a rotary shaft driving unit 160, a semiconductor light emitting element driving unit 150, and a rotation as shown in FIG. And a control unit 170 that controls the shaft driving unit 160.

  The semiconductor light emitting element driving unit 150 controls driving of the semiconductor light emitting element 50 based on a control signal from the control unit 170.

  The rotating shaft drive unit 160 is configured by, for example, a stepping motor and the like, and rotates the rotating shaft 120 based on a control signal from the control unit 170.

  Further, the semiconductor light emitting element driving unit 150 and the rotating shaft driving unit 160 are independently controlled by the control unit 170.

  Next, the operation of the semiconductor light emitting device according to the first embodiment of the present invention will be described with reference to FIGS.

First, as shown in FIG. 1, the excitation light L ₁₁ (laser light) is emitted from the semiconductor light emitting element 50 toward the disk-shaped phosphor-containing member 110, and the excitation light L ₁₁ is back of the phosphor-containing member 110 ( A part of the lower surface is irradiated. When the excitation light L ₁₁ in the phosphor-containing member 110 is irradiated, the excitation light L ₁₁ by the phosphor being contained is converted into visible light of a desired color by mixing, white illumination from the phosphor-containing member 110 Light L (white light) is emitted. At this time, the orientation characteristics are controlled by the lens shape (convex lens portion 112) provided on the phosphor-containing member 110, and changes in the orientation characteristics are suppressed. In addition, the orientation characteristic of the illumination light L is brought close to parallel light.

Further, the control unit 170 (see FIG. 2), the semiconductor light emitting element driving unit 150 (see FIG. 2) is controlled, the optical output of the excitation light L ₁₁ emitted from the semiconductor light emitting element 50 is controlled. Thereby, the light intensity of the illumination light L is adjusted.

On the other hand, when the rotating shaft driving unit 160 (see FIG. 2) is controlled by the control unit 170 (see FIG. 2), the rotating shaft 120 is rotated, and accordingly, the phosphor-containing member 110 is rotated. Thus, the irradiation position of the excitation light L ₁₁ in the phosphor-containing member 110 is changed, the excitation light L ₁₁ is irradiated to a desired phosphor region to D (see FIG. 3). Then, in response to changes in the phosphor concentration due to a change in irradiation position of the excitation light L _11, color of the illumination light L (tint) changes.

  The semiconductor light emitting element driving unit 150 and the rotating shaft driving unit 160 shown in FIG. Therefore, as described above, the light intensity of the illumination light L is adjusted by controlling the semiconductor light emitting element driving unit 150, and the emission color of the illumination light L is adjusted by controlling the rotary shaft driving unit 160. .

  6 and 7 are views illustrating a method for forming a phosphor-containing member of the semiconductor light emitting device according to the first embodiment of the present invention. Next, an example of a method for forming the phosphor-containing member 110 according to the first embodiment will be described with reference to FIG. 1, FIG. 3, FIG. 6, and FIG. In addition, since the phosphor-containing member 110 of the semiconductor light emitting device according to the first embodiment can be molded using a mold, for example, in the following description, the phosphor-containing member 110 using the mold is used. A forming method will be described.

  First, a mold 70 as shown in FIG. 6 is prepared. The mold 70 has a cubic shape, and a cylindrical recess 71 is formed on one surface thereof. The bottom surface of the cylindrical recess 71 is provided with a shape that can realize a desired lens shape (for example, a convex lens shape) when a molding such as a resin is poured into the recess.

  Next, as shown in FIG. 7, a partition plate 72 is installed in the columnar recess 71 of the mold 70, and the columnar recess 71 is divided into a plurality (four) of regions a to d. At this time, the planar region of the cylindrical recess 71 is divided into four by two partition plates 72 (72a, 72b) orthogonal to each other so that the regions a to d are substantially equal.

  Subsequently, a plurality of types (four types) of phosphor-containing resins having different phosphor dispersion concentrations and phosphor dispersion ratios are prepared for the resin in which the phosphor material is dispersed in the uncured resin. And these fluorescent substance containing resin is poured into each divided area | region ad.

  Finally, the partition plate 72 is removed and a curing process such as heat treatment is performed. As a result, a phosphor-containing member 110 having a lens shape (convex lens portion 112) as shown in FIG. 1 and a phosphor concentration distribution in the circumferential direction (rotation direction) is formed. The phosphor regions A to D (see FIG. 3) of the phosphor-containing member 110 correspond to the regions a to d of the mold 70, respectively.

  In the first embodiment, as described above, the configuration including the semiconductor light emitting element 50 and the phosphor-containing member 110 having the phosphor concentration distribution has a simple configuration that is less affected by temperature and changes with time. The emission color can be changed to a desired color (color).

  Moreover, in 1st Embodiment, it can suppress that an orientation characteristic changes with this lens shape by giving the fluorescent substance containing member 110 a lens shape.

  As described above, the semiconductor light emitting device according to the first embodiment can change the emission color while suppressing the change in the alignment characteristics by being configured as described above.

  In the semiconductor light emitting device according to the first embodiment configured as described above, since the emission color can be easily changed to a desired color, when this semiconductor light emitting device is used as a vehicle lamp, Since the light of the color according to the surrounding weather, brightness, etc. can be emitted, effects, such as a visibility improvement and a driver | operator's fatigue reduction, can be anticipated.

In the first embodiment, the phosphor-containing member 110 is rotatably supported, and the rotation-axis driving unit 160 rotates the phosphor-containing member 110, so that the excitation light L ₁₁ in the phosphor-containing member 110 is rotated. The irradiation position can be changed to a desired position. As a result, the emission color can be changed to a desired color with a simpler configuration.

  In the first embodiment, the phosphor-containing member 110 is configured to have a phosphor concentration distribution in the rotation direction, whereby the emission color can be changed to a desired color more easily.

  In the first embodiment, since the light output per element can be increased by using the semiconductor light emitting element 50 made of a semiconductor laser element, a high output semiconductor light emitting device can be obtained.

  In the first embodiment, the lens shape is a convex lens shape protruding to the side opposite to the semiconductor light emitting element 50 (the emission direction of the illumination light L), so that the illumination from the phosphor-containing member 110 can be easily performed. The light L can be brought close to parallel light. Thereby, for example, when used as a vehicle headlamp (vehicle lamp), a semiconductor light emitting device that emits suitable light can be obtained.

  In the first embodiment, by forming the lens shape (convex lens portion 112) integrally with the phosphor-containing member 110, the phosphor-containing member 110 can easily have the lens shape (convex lens portion 112). Can be formed.

  As a semiconductor light emitting device according to Example 1, a light emitting device was manufactured by using a nitride semiconductor laser element that emits laser light having a wavelength of 405 nm as a semiconductor light emitting element. A commercially available silicone resin (KER-2500: manufactured by Shin-Etsu Silicone (Shin-Etsu Chemical Co., Ltd.)) was used as the resin for dispersing the phosphor. Then, three types of phosphors having different emission peak wavelengths were dispersed in the silicone resin, and the silicone resin in which these phosphors were dispersed was cured, thereby forming a disk-shaped phosphor-containing member.

  The three types of phosphors are a Ce-activated JEM phosphor having an emission spectrum peak wavelength of 490 nm, an Eu-activated αSiAlON phosphor having an emission spectrum peak wavelength of 580 nm, and an Eu-activated CaAlSiN3 fluorescence having an emission spectrum peak wavelength of 650 nm, respectively. Is the body. These phosphors were prepared using the method disclosed in Japanese Patent Application Laid-Open No. 2008-19407.

  And after filling the mixture which mixed these resin and fluorescent substance by the weight ratio shown in the following Table 1 into the area | regions ad of a metal mold (refer FIG. 7) with the combination similarly shown in Table 1, it is the above-mentioned. A phosphor-containing member was produced by the same method as in the first embodiment. The remaining configuration of Example 1 is the same as that of the first embodiment.

  The emission spectrum was measured using the semiconductor light emitting device according to Example 1 configured as described above. Table 2 shows the relationship between the rotation angle of the rotation axis of the semiconductor light emitting device according to Example 1 and the characteristics of illumination light. The values shown in Table 2 are obtained by measuring the emission spectrum of the semiconductor light emitting device using a spectrophotometer (manufactured by Otsuka Electronics: MCPD-7000) and calculating with the software attached to the photometer. Here, the average color rendering index Ra is a value obtained by quantifying the magnitude of the color shift when the test color is illuminated with the sample light source and the reference light. As a semiconductor light emitting device (illumination device), this average color rendering index Ra is preferably 80 or more, more preferably 90 or more. When the rotation angle of the rotation axis is 0 degrees, the phosphor region A is irradiated with excitation light, and when the rotation angle is 90 degrees, the phosphor region B is irradiated with excitation light. It is in a state. Further, when the rotation angle is 180 degrees, the phosphor region C is irradiated with excitation light, and when the rotation angle is 270 degrees, the phosphor region D is irradiated with excitation light. is there.

  From Table 2 above, it can be seen that the characteristics of the illumination light such as the color temperature are changed by rotating the phosphor-containing member (rotating shaft). From this, it was confirmed that the color of the illumination light can be easily changed by rotating the phosphor-containing member. In addition, in the semiconductor light emitting device according to Example 1, high color rendering properties with an average color rendering index Ra of 80 or more are obtained regardless of the color of the illumination light.

(Second Embodiment)
FIG. 8 is a perspective view schematically showing the configuration of the light source unit of the semiconductor light emitting device according to the second embodiment of the present invention. FIG. 9 is a plan view showing a configuration of a phosphor-containing member having no lens shape of the semiconductor light emitting device according to the second embodiment of the present invention. Next, a semiconductor light emitting device according to a second embodiment of the present invention will be described with reference to FIGS. In addition, since structures other than the light source part in 2nd Embodiment are the same as that of the said 1st Embodiment, the description is abbreviate | omitted.

  The semiconductor light emitting device according to the second embodiment includes a light source unit 200 having two phosphor-containing members 210, as shown in FIG. Specifically, the light source unit 200 includes a phosphor-containing member 210a (first phosphor-containing member) similar to that of the first embodiment and a phosphor-containing member 210b (second lens) having no lens shape. The phosphor-containing member 210 and the two phosphor-containing members 210 are included. That is, the light source unit 200 of the second embodiment has a configuration further including a phosphor-containing member 210b having no lens shape in addition to the configuration of the first embodiment.

Further, the two phosphor-containing members 210 have substantially the same shape except for the lens shape, and are arranged so as to overlap each other in the emission direction of the excitation light L ₁₁ . Further, as shown in FIG. 9, the phosphor-containing member 210b having no lens shape is also different from the phosphor-containing member 210a (110) having the lens shape in that the phosphor dispersion concentration and the phosphor dispersion ratio are different. It has (four) phosphor regions A to D. These phosphor regions A to D have the X direction and the direction parallel to the radial direction of the phosphor-containing member 210b as the X direction and the direction parallel to the tangential direction of the phosphor-containing member 210b as the Y direction. It is substantially equally divided in the Y direction. Then, the two phosphor-containing members 210 (210a, 210b) are arranged such that the phosphor regions A to D of the phosphor-containing member 210a and the phosphor regions A to D of the phosphor-containing member 210b correspond (oppose), respectively. ) Are fixed to the rotating shaft 120 (see FIG. 8) at a predetermined distance from each other. Further, as shown in FIG. 8, the phosphor-containing members 210a and 210b are supported by the rotating shaft 120 so as to be integrally rotatable.

  In the second embodiment, the phosphor-containing member 210 a having a lens shape is disposed at a position far from the semiconductor light emitting element 50.

  Further, in the second embodiment, the phosphor-containing member 210 a disposed at a position far from the semiconductor light emitting element 50 has a light emission peak than the phosphor-containing member 210 b disposed at a position close to the semiconductor light emitting element 50. Phosphors with short wavelengths are dispersed.

  Other configurations of the second embodiment are the same as those of the first embodiment.

  Next, the operation of the semiconductor light emitting device according to the second embodiment of the present invention will be described with reference to FIG.

When the excitation light L ₁₁ (laser light) emitted from the semiconductor light emitting element 50 is irradiated onto the phosphor-containing member 210b having no lens shape, a part of the wavelength is converted by the phosphor contained in the phosphor-containing member 210b. Thus, the mixed light L _{12 of} excitation light L ₁₁ and fluorescence is obtained. Then, the mixed light L ₁₂ is irradiated to the phosphor-containing member 210a having a lens shape. When mixed light L ₁₂ is irradiated onto the phosphor-containing member 210a having the shape of a lens, the phosphor-containing member 210a is converted into the desired visible light, a white illumination light L from the phosphor-containing member 210a (white light) Be emitted. At this time, as in the first embodiment, the orientation characteristics are controlled by the lens shape (convex lens portion 112) provided in the phosphor-containing member 210a, and changes in the orientation characteristics are suppressed. In addition, the orientation characteristic of the illumination light L is brought close to parallel light.

On the other hand, when the rotary shaft 120 is rotated, along with this, the phosphor-containing member 210 (210a, 210b) is rotated, it changes the irradiation position of the excitation light L ₁₁ in the phosphor-containing member 210b. Thus, the excitation light L ₁₁ to a desired phosphor region in the phosphor-containing member 210b without a lens shape is irradiated, the mixed light L ₁₂ from the phosphor-containing member 210b, a phosphor having a lens shape The desired phosphor region in the containing member 210a is irradiated. The color (color) of the illumination light L changes according to the change in the phosphor concentration due to the change in the irradiation position of the excitation light L ₁₁ and the mixed light L ₁₂ .

  In the second embodiment, as described above, the two phosphor-containing members 210 are provided, and the phosphor contained in the phosphor-containing member 210a far from the semiconductor light emitting device 50 is replaced with the phosphor containing member close to the semiconductor light emitting device 50. By configuring the emission peak wavelength to be shorter than that of the phosphor included in 210b, reabsorption of fluorescence emitted from the phosphor can be suppressed, so that the light emission efficiency can be increased.

In the second embodiment, by using the semiconductor light emitting device 50 made of a semiconductor laser device, the emitted light from such a semiconductor laser device is coherent light and has high linearity. even when equipped with, it is possible to sufficiently excite the phosphor-containing member 210a farther than the excitation light L ₁₁ side.

  Other effects of the second embodiment are the same as those of the first embodiment.

  As a semiconductor light-emitting device according to Example 2, a light-emitting device was fabricated using a nitride-based semiconductor laser element that emits laser light having a wavelength of 405 nm, as in Example 1 above. Moreover, in Example 2, it was set as the structure provided with two fluorescent substance containing members similarly to the said 2nd Embodiment. These two phosphor-containing members (first phosphor-containing member and second phosphor-containing member) were each formed using the same method as in Example 1. Specifically, the phosphor-containing member is prepared by filling the four regions a to d of the mold separated in the same manner as in Example 1 with a mixture obtained by mixing the resin and the phosphor in different weight ratios and then curing the mixture. Was made. Table 3 below shows the weight ratio between the resin and the phosphor in the regions a to d of each phosphor-containing member. Here, the weight ratio between the resin and the phosphor in each of the regions a to d was appropriately adjusted so as to exhibit the same characteristics as those shown in Table 2 above. The other configuration of Example 2 is the same as that of the second embodiment.

  In Example 2, as shown in Table 3, in the first phosphor-containing member having the lens shape, one kind of phosphor is dispersed, and the second phosphor-containing member not having the lens shape. Two types of phosphors are dispersed.

(Third embodiment)
FIG. 10 is a perspective view schematically showing the configuration of the light source unit of the semiconductor light emitting device according to the third embodiment of the present invention. FIG. 11 is a plan view showing a configuration of a phosphor-containing member having no lens shape of the semiconductor light emitting device according to the third embodiment of the present invention. Next, with reference to FIG. 10 and FIG. 11, the semiconductor light-emitting device by 3rd Embodiment of this invention is demonstrated. In addition, since structures other than the light source part in 3rd Embodiment are the same as that of the said 1st Embodiment, the description is abbreviate | omitted.

  The semiconductor light emitting device according to the third embodiment includes a light source unit 300 having three phosphor-containing members 310 as shown in FIG. Specifically, the light source unit 300 includes a phosphor-containing member 310a (first phosphor-containing member) similar to that in the first embodiment, and phosphor-containing members 310b and 310c (second lens) having no lens shape. The phosphor-containing member, the third phosphor-containing member). That is, the light source unit 300 of the third embodiment has a configuration further including two phosphor-containing members 310b and 310c having no lens shape in addition to the configuration of the first embodiment.

Further, the three phosphor-containing member, except the lens shape has substantially the same shape, the emission direction of the excitation light L _11, are arranged to overlap each other. As shown in FIG. 11, the phosphor-containing members 310b and 310c having no lens shape also have a phosphor dispersion concentration and a phosphor dispersion ratio similar to the phosphor-containing member 310a (110) having a lens shape. A plurality of (four) different phosphor regions A to D are provided. In these phosphor regions A to D, the direction parallel to the radial direction of the phosphor-containing member 310 (310b, 310c) is defined as the X direction, and the direction parallel to the tangential direction of the phosphor-containing member 310 (310b, 310c) is defined. When the direction is the Y direction, it is substantially equally divided in the X direction and the Y direction. The phosphor regions A to D of the phosphor-containing member 310a, the phosphor regions A to D of the phosphor-containing member 310b, and the phosphor regions A to D of the phosphor-containing member 310c respectively correspond (opposite). As described above, the three phosphor-containing members 310 are fixed to the rotating shaft 120 (see FIG. 10) at a predetermined distance from each other. Further, as shown in FIG. 10, the phosphor-containing members 310a, 310b, and 310c are supported by the rotating shaft 120 so as to be integrally rotatable.

  In the third embodiment, the phosphor-containing member 310 a (110) having a lens shape is disposed at a position farthest from the semiconductor light emitting element 50.

  Furthermore, in the third embodiment, the phosphor-containing member disposed at a position far from the semiconductor light emitting element 50 has a light emission peak wavelength as compared with the phosphor-containing member disposed at a position close to the semiconductor light emitting element 50. Short phosphors are dispersed. That is, in the third embodiment, the emission peak wavelength of the phosphor contained in the phosphor-containing member 310a is shorter than the emission peak wavelength of the phosphor contained in the phosphor-containing member 310b, and the fluorescence contained in the phosphor-containing member 310b. The emission peak wavelength of the body is shorter than the emission peak wavelength of the phosphor contained in the phosphor-containing member 310c.

  Other configurations of the third embodiment are the same as those of the first and second embodiments.

  Next, the operation of the semiconductor light emitting device according to the third embodiment of the present invention will be described with reference to FIG.

When the excitation light L ₁₁ (laser light) emitted from the semiconductor light emitting device 50 is irradiated onto the phosphor-containing member 310c having no lens shape, a part of the wavelength is converted by the phosphor contained in the phosphor-containing member 310c. Thus, the mixed light L _{12 of} excitation light L ₁₁ and fluorescence is obtained. Then, the mixed light L ₁₂ is irradiated onto the phosphor-containing member 310b without the lens shape. When mixed light L ₁₂ is irradiated onto the phosphor-containing member 310b without a lens shape, a portion, a phosphor contained in the phosphor-containing member 310b is wavelength-converted excitation light L ₁₁ and the mixed light of the fluorescent the L _13. When the mixed light L ₁₃ is irradiated onto the phosphor-containing member 310a having the shape of a lens, the phosphor-containing member 310a is converted into the desired visible light, a white illumination light L from the phosphor-containing member 310a (white light) Is emitted. At this time, as in the first and second embodiments, the orientation characteristics are controlled by the lens shape (convex lens portion 112) provided on the phosphor-containing member 310a, and changes in the orientation characteristics are suppressed. In addition, the orientation characteristic of the illumination light L is brought close to parallel light.

On the other hand, when the rotary shaft 120 is rotated, along with this, the phosphor-containing member 310 (310a, 310b, 310c) are rotated, it changes the irradiation position of the excitation light L ₁₁ in the phosphor-containing member 310c. Thus, the excitation light L ₁₁ to a desired phosphor region in the phosphor-containing member 310c without a lens shape is irradiated, mixed light L ₁₂ from the phosphor-containing member 310c does not have a lens shape The desired phosphor region in the phosphor-containing member 310b is irradiated. Then, the mixed light L ₁₃ from the phosphor-containing member 310b is irradiated to a desired phosphor region in the phosphor-containing member 310a having a lens shape. Thereby, the color (color) of the illumination light L changes according to the change of the phosphor concentration due to the change of the irradiation position of the excitation light L ₁₁ and the mixed light L ₁₂ and L ₁₃ .

  In the third embodiment, as described above, the three phosphor-containing members 310 are provided, and the phosphor contained in the phosphor-containing member far from the semiconductor light-emitting element 50 is replaced with the phosphor-containing member close to the semiconductor light-emitting element 50. By configuring the emission peak wavelength to be shorter than that of the included phosphor, it is possible to suppress reabsorption of the fluorescence emitted from the phosphor, so that the light emission efficiency can be increased.

Further, in the third embodiment, by using the semiconductor light emitting element 50 made of a semiconductor laser element, the emitted light from such a semiconductor laser element is coherent light and has high linearity. Even when the phosphor-containing member is provided, the phosphor-containing member on the side farther than the excitation light L ₁₁ can be sufficiently excited.

  Other effects of the third embodiment are the same as those of the first embodiment.

  As a semiconductor light-emitting device according to Example 3, a light-emitting device was manufactured using a nitride-based semiconductor laser element that emits laser light having a wavelength of 405 nm, as in Examples 1 and 2. Moreover, in Example 3, it was set as the structure provided with three fluorescent substance containing members similarly to the said 3rd Embodiment. These three phosphor-containing members (a first phosphor-containing member, a second phosphor-containing member, and a third phosphor-containing member) were each formed using the same method as in Example 1. Specifically, the phosphor-containing member is prepared by filling the four regions a to d of the mold separated in the same manner as in Example 1 with a mixture obtained by mixing the resin and the phosphor in different weight ratios and then curing the mixture. Was made. Table 4 below shows the weight ratio between the resin and the phosphor in the regions a to d of each phosphor-containing member. Here, the weight ratio between the resin and the phosphor in each of the regions a to d was appropriately adjusted so as to exhibit the same characteristics as those shown in Table 2 above. Other configurations of Example 3 are the same as those of the third embodiment.

  In Example 3, as shown in Table 4, one type of phosphor is dispersed in any of the three phosphor-containing members. However, these phosphors have different emission peak wavelengths.

  Subsequently, Table 5 and Table 6 below show a comparison of light emission intensities (light emission intensity relative values) of Examples 1 to 3 when driven by the same drive power. Table 5 is for when the rotation angle is 0 degree, and Table 6 is for when the rotation angle is 270 degrees.

  From Tables 5 and 6, it can be seen that the emission intensity is in the relationship of Example 3> Example 2> Example 1. This is because the semiconductor light emitting devices of Example 2 and Example 3 include a plurality of phosphor-containing members, and the emission peak wavelength of the phosphor contained in the phosphor-containing member far from the excitation light is closer to the excitation light. This is because it is shorter than the emission peak wavelength of the phosphor contained in the phosphor-containing member.

(Fourth embodiment)
FIG. 12 is a schematic diagram showing the configuration of a vehicle headlamp according to a fourth embodiment of the present invention. Next, with reference to FIG.1, FIG.8, FIG.10 and FIG. 12, the vehicle headlamp by 4th Embodiment of this invention is demonstrated. In the fourth embodiment, an example in which the present invention is applied to a vehicle headlamp that is an example of a vehicle lamp will be described.

  The vehicle headlamp according to the fourth embodiment includes an illumination device 400 as a light source, as shown in FIG. The illumination device 400 includes at least one of the semiconductor light emitting devices shown in the first to third embodiments.

  The vehicle headlamp according to the fourth embodiment further includes a first reflector 410, a second reflector 420, and a projection lens 430. Then, the light from the lighting device 400 reaches the projection lens 430 via the first reflector 410 and the second reflector 420, and the light is projected from the projection lens 430 to the front of the vehicle. .

  In the vehicle headlamp according to the fourth embodiment, with the configuration as described above, by driving the rotating shaft 120 (see FIGS. 1, 8, and 10), a stable orientation characteristic is maintained, The emission color can be changed to a desired color. Further, by configuring as described above, color unevenness can be reduced.

  Further, such a vehicle headlamp can be mounted on a vehicle such as a four-wheel automobile or a two-wheel motorcycle.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the embodiments but by the scope of claims for patent, and further includes all modifications within the meaning and scope equivalent to the scope of claims for patent.

  For example, in the first to third embodiments, the semiconductor laser element is used as the semiconductor light emitting element as the excitation light source. However, the present invention is not limited to this, and the semiconductor laser is used as the semiconductor light emitting element as the excitation light source. A light emitting element other than the element may be used. For example, light emitting elements such as various solid-state lasers, light emitting diodes, and superluminescent diodes may be used as the excitation light source.

  In the first to third embodiments, an example in which a semiconductor laser element made of a nitride semiconductor is used as an example of the semiconductor laser element. However, the present invention is not limited to this, and other than the nitride semiconductor. The semiconductor laser element may be used.

  Moreover, in the said 1st-3rd embodiment, although the illumination light from a semiconductor light-emitting device was shown as the white light, the present invention is not restricted to this, but emits illumination light of colors other than white light. A semiconductor light emitting device (light source unit) can also be configured. In the first to third embodiments, one type of phosphor may be included in the phosphor-containing member.

  Moreover, in the said 1st-3rd embodiment, although the example which made the lens shape of the fluorescent substance containing member the cyclic | annular convex lens shape was shown, this invention is not restricted to this, A desired orientation characteristic can be acquired. A lens shape other than those described above may be used as long as it has a lens shape. For example, a convex lens shape other than an annular shape as shown in FIGS. 13 and 14 may be used. That is, it is good also as a structure provided with the fluorescent substance containing member 510 which has such a convex lens shape (convex lens part 112a). In addition to the convex lens shape, the lens shape may be, for example, a concave lens shape, a prism lens shape, or a Fresnel lens shape. The alignment characteristic is preferably parallel light, but may not be parallel light.

  Further, in the first to third embodiments, the example in which the phosphor-containing member is formed in a disk shape is shown. However, the present invention is not limited to this, and the phosphor-containing member has a shape other than the disk shape. May be. For example, it may be a plate shape having a rectangular shape when viewed in plan.

  Moreover, although the example which comprised the fluorescent substance containing member rotatably was shown in the said 1st-3rd embodiment, this invention is not restricted to this, For example, the fluorescent substance containing member is comprised so that a slide movement is possible. May be. Further, the phosphor-containing member may be fixed and the semiconductor light emitting element may be moved. Further, both the phosphor-containing member and the semiconductor light emitting element may be configured to be movable.

  Moreover, in the said 1st-3rd embodiment, although shown about the example provided with 1-3 fluorescent substance containing members, this invention is set as the structure provided with not only this but four or more fluorescent substance containing members. May be.

  Moreover, in the said 1st-3rd embodiment, although the example which provided four fluorescent substance areas in the fluorescent substance containing member was shown, this invention is not restricted to this, and there are more than four fluorescent substance areas. Or less than four. Moreover, the fluorescent substance area | region may be divided | segmented so that it may become a different plane area.

  In the first to third embodiments, the dimensions, shape, arrangement, and the like of the phosphor-containing member constituting the semiconductor light emitting device can be changed as appropriate.

  In the second and third embodiments, the phosphor contained in the phosphor-containing member farther from the semiconductor light-emitting element has a light emission peak wavelength than the phosphor contained in the phosphor-containing member close to the semiconductor light-emitting element. Although an example configured to be shorter was shown, the present invention is not limited to this, and the phosphor emission member included in the phosphor-containing member farther from the semiconductor light-emitting device has a phosphor emission peak wavelength closer to the semiconductor light-emitting device. You may be comprised so that it may become longer than the light emission peak wavelength of the fluorescent substance contained. However, from the viewpoint of suppressing reabsorption of fluorescence emitted from the phosphor, the phosphor contained in the phosphor-containing member farther from the semiconductor light-emitting element is the phosphor contained in the phosphor-containing member close to the semiconductor light-emitting element. It is preferable that the emission peak wavelength is shorter than that.

  In the second and third embodiments, the phosphor-containing member disposed at the position farthest from the semiconductor light emitting element is configured to have a lens shape. However, the present invention is not limited to this. For example, a phosphor-containing member other than the phosphor-containing member disposed at a position farthest from the semiconductor light emitting element may be configured to have a lens shape. Further, when a plurality of phosphor-containing members are provided, all of the plurality of phosphor-containing members may have a lens shape. Furthermore, the phosphor-containing member disposed at a position farthest from the semiconductor light emitting element and the other phosphor-containing members may be configured to have a lens shape.

  In the fourth embodiment, the example in which the present invention is applied to a vehicle headlamp that is an example of a vehicle lamp is shown. However, the present invention is not limited to this, and the present invention is applicable to a vehicle lamp other than the vehicle headlamp. The present invention may be applied. For example, the present invention may be applied to a tail lamp, a blinker lamp, a fog lamp, and the like.

  The semiconductor light emitting devices shown in the first to third embodiments can be applied to general lighting other than the vehicle lamp.

DESCRIPTION OF SYMBOLS 50 Semiconductor light-emitting device 51 Irradiation area 70 Mold 71 Cylindrical hollow part 72 Partition plate 100, 200, 300 Light source part 110, 210, 310 Phosphor containing member 111 Through-hole 112 Convex lens part 120 Rotating shaft 150 Semiconductor light-emitting element drive part 160 Rotation axis drive unit 170 Control unit 400 Illuminating device 410 First reflector 420 Second reflector 430 Projection lens L Illumination light L ₁₁ Excitation light L ₁₂ , L ₁₃ Mixed light

Claims (14)

A semiconductor light emitting device emitting excitation light;
Including a phosphor, and a phosphor-containing member that emits fluorescence when excited by excitation light from the semiconductor light emitting element,
The phosphor-containing member has a phosphor concentration distribution and has a lens shape at least in part.   The at least one of the said semiconductor light emitting element and the said fluorescent substance containing member is comprised so that a movement is possible so that the irradiation position of the said excitation light in the said fluorescent substance containing member may change, The Claim 1 characterized by the above-mentioned. Semiconductor light emitting device.   The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting element is a semiconductor laser element.   The semiconductor light-emitting device according to claim 1, wherein the phosphor-containing member is rotatably supported.   The semiconductor light-emitting device according to claim 4, wherein the phosphor-containing member has a phosphor concentration distribution in a rotation direction.   The semiconductor light-emitting device according to claim 1, wherein the lens shape is a convex lens shape that protrudes to the opposite side of the semiconductor light-emitting element.   The semiconductor light emitting device according to claim 1, wherein the lens shape is formed integrally with the phosphor-containing member.   The semiconductor light-emitting device according to claim 1, wherein the phosphor-containing member includes a plurality of types of phosphors having different emission peak wavelengths.   The semiconductor light-emitting device according to claim 1, comprising a single phosphor-containing member. A plurality of the phosphor-containing members,
The plurality of phosphor-containing members are disposed so as to overlap each other in the emission direction of the excitation light,
9. The semiconductor light emitting device according to claim 1, wherein at least the phosphor-containing member disposed at a position farthest from the semiconductor light emitting element has the lens shape. 10. The plurality of phosphor-containing members include a plurality of types of phosphors having emission peak wavelengths different from each other,
The semiconductor light-emitting device according to claim 10, wherein each of the phosphor-containing members includes one or more types of the phosphors.   The phosphor contained in the phosphor-containing member far from the semiconductor light-emitting element has a shorter emission peak wavelength than the phosphor contained in the phosphor-containing member close to the semiconductor light-emitting element. 12. The semiconductor light emitting device according to claim 10 or 11.   The semiconductor light-emitting device according to claim 1, wherein the phosphor included in the phosphor-containing member is a nitride-based phosphor or an oxynitride-based phosphor.   A vehicular lamp comprising the semiconductor light emitting device according to claim 1.

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