JP2011046582A - Method for cutting joined glass, method for manufacturing package, package, piezoelectric vibrator, oscillator, electronic equipment and radio-cntrolled clock - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for cutting joined glass, in which a joined glass piece formed by dividing the joined glass is easily taken out, manufacturing efficiency is improved and manufacturing cost is reduced, a method for manufacturing a package, the package, a piezoelectric vibrator, an oscillator, electronic equipment and a radio-controlled clock. <P>SOLUTION: The method for cutting joined glass comprises: a scribing step of forming a scribe line M' on a substrate wafer for lid by irradiating along a contour line M, with laser beam of absorption wave length for a wafer joined body; a breaking step of cutting the wafer joined body along the scribe line M' by applying cleavage stress by a cutting blade along the scribe line M' to divide the wafer joined body into a plurality of piezoelectric vibrators; and an expanding step of expanding an interval between the piezoelectric vibrators adjacent to each other by drawing a UV tape 80. The UV tape 80 is formed to have thickness of 160-180 μm. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a bonding glass cutting method, a package manufacturing method, a package, a piezoelectric vibrator, an oscillator, an electronic device, and a radio timepiece.

  2. Description of the Related Art In recent years, piezoelectric vibrators (packages) that use crystal or the like as a time source, a timing source such as a control signal, a reference signal source, and the like are used in mobile phones and portable information terminal devices. Various piezoelectric vibrators of this type are known, and one of them is a surface mount (SMD) type piezoelectric vibrator. As this type of piezoelectric vibrator, for example, a base substrate and a lid substrate bonded to each other, a cavity formed between both substrates, and a piezoelectric vibrating piece (electronic) housed in a hermetically sealed state in the cavity Parts).

Here, a method for manufacturing the above-described piezoelectric vibrator will be briefly described.
First, a cavity concave portion is formed on a lid substrate wafer, and a piezoelectric vibrating piece is mounted on the base substrate wafer, and then both wafers are anodically bonded via a bonding layer (bonding material). The wafer bonded body is formed in the matrix direction. Then, the surface of the wafer bonded body is irradiated with laser light to form a scribe line (groove) along the planned cutting line of the wafer bonded body. Next, by applying a cleaving stress along the scribe line and cutting the wafer bonded body, the wafer bonded body is separated into a plurality of piezoelectric vibrators.

  By the way, in the manufacturing field of semiconductors, for example, in order to make it easy to take out individual semiconductor chips from a semiconductor wafer, an adhesive sheet is attached to the semiconductor wafer before cutting, and the adhesive sheet is stretched after cutting the semiconductor wafer. Thus, a method of performing an expanding process for widening the interval between the semiconductor chips is disclosed (for example, see Patent Document 1). Then, after the expanding process, the position of the semiconductor chip is grasped by image recognition or the like, and the semiconductor chip is taken out. According to this configuration, it is said that the contact between adjacent semiconductor chips can be prevented when the semiconductor chips are taken out by widening the interval between the semiconductor chips.

Japanese Patent Laid-Open No. 11-45865

Recently, developments have been made to employ the above-described expanding process in the manufacture of piezoelectric vibrators.
However, when the above-described expanding process is employed for manufacturing the piezoelectric vibrator, the adhesive sheet is damaged by the laser when the scribe line is formed on the bonded wafer. Further, when cleaving stress is applied to the wafer bonded body after the scribe line is formed, stress concentration occurs in the adhesive sheet, and the adhesive sheet is damaged. In such a case, particularly when a thin adhesive sheet is used, the expansion tape does not stretch evenly in the expanding step after cutting, or the adhesive sheet breaks starting from the damaged part. There is a problem. As a result, adjacent piezoelectric vibrators come into contact with each other during the expanding process, and chipping occurs at the corners of the piezoelectric vibrator, and the piezoelectric vibrator is easily broken by using this chipping. Moreover, since the space | interval of each piezoelectric vibrator cannot be ensured, when taking out a piezoelectric vibrator, adjacent piezoelectric vibrators may contact. This also may cause chipping in the piezoelectric vibrator.
On the other hand, the adhesive sheet can be replaced after the scribe line is formed and before the wafer bonded body is cut. In this case, however, the manufacturing efficiency is reduced and the manufacturing cost (labor cost, material cost, etc.) is reduced. There is a problem that leads to an increase in

  On the other hand, when the thickness of the pressure-sensitive adhesive sheet is too thick, a relatively large force is required to stretch the pressure-sensitive adhesive sheet, and the production efficiency is lowered. Moreover, there is also a problem that the material cost is increased by using a thick adhesive sheet.

  Then, this invention is made | formed in view of the problem mentioned above, While making it easy to take out the joining glass piece separated into pieces, improvement of manufacturing efficiency and reduction of manufacturing cost are realizable. A cutting method, a package manufacturing method, a package, a piezoelectric vibrator, an oscillator, an electronic device, and a radio timepiece are provided.

In order to solve the above-described problems, the present invention provides the following means.
In the method for cutting bonded glass according to the present invention, the bonding glass is bonded to one surface of the bonding glass in which bonding surfaces of a plurality of glass substrates are bonded to each other through a bonding material. A method for cutting bonded glass that cuts along a planned cutting line, wherein a laser beam having an absorption wavelength of the bonded glass is irradiated along the planned cutting line to form a groove on the other surface of the bonded glass. A groove forming step, a cutting step in which the joining glass is cut by applying a cleaving stress along the planned cutting line, and the joining glass is separated into a plurality of joining glass pieces, and the pressure-sensitive adhesive sheet is stretched. Thus, the adhesive sheet is characterized in that the adhesive sheet is formed to have a thickness of 160 μm or more and 180 μm or less.

According to this configuration, by using the pressure-sensitive adhesive sheet having a thickness of 160 μm or more, the pressure-sensitive adhesive sheet is damaged by the laser light in the groove forming process or the cleaving stress in the cutting process. Can tolerate the effects of this damage. That is, in the expanding step, the pressure-sensitive adhesive sheet can be prevented from being broken and the whole pressure-sensitive adhesive sheet can be uniformly stretched, so that contact between adjacent glass pieces can be prevented when the pressure-sensitive adhesive sheet is stretched. And since the space | interval of each joining glass piece can be expanded uniformly, adjacent joining glass pieces can be isolate | separated reliably. Therefore, when taking out the bonded glass pieces from the pressure-sensitive adhesive sheet after the expanding step, it becomes easy to recognize the individual bonded glass pieces (because recognition accuracy is improved), so that each bonded glass piece can be easily taken out.
Moreover, when taking out the bonded glass piece from the adhesive sheet after the expanding step, the contact with the adjacent bonded glass piece is prevented, the occurrence of chipping due to the contact between the bonded glass pieces is prevented, and the bonded glass piece is prevented from cracking. be able to. Therefore, it is possible to increase the number of pieces of bonded glass taken out as a non-defective product from one bonded glass, and it is possible to improve the yield.
Moreover, since there is no possibility that the adhesive sheet breaks or the like in the expanding process as described above, the adhesive sheet used in the groove forming process or the like can be used as it is in the expanding process without being replaced. That is, since it is not necessary to perform an adhesive sheet redrawing step or the like prior to the expanding step, it is possible to prevent a decrease in manufacturing efficiency and an increase in manufacturing cost.
On the other hand, by using the pressure-sensitive adhesive sheet having a thickness of 180 μm or less, the force required to stretch the pressure-sensitive adhesive sheet can be suppressed, and thus the production efficiency can be improved. Moreover, since it can procure easily in a market, the material cost which an adhesive sheet requires can be reduced.

In the expanding step, the pressure-sensitive adhesive sheet is stretched while being heated to 50 ° C. or higher.
According to this configuration, by heating the pressure-sensitive adhesive sheet to 50 ° C. or higher, the pressure-sensitive adhesive sheet can be softened and the pressure-sensitive adhesive sheet can be easily stretched. Thereby, a fracture | rupture etc. of an adhesive sheet can be prevented reliably and the whole adhesive sheet can be extended uniformly.

Further, the pressure-sensitive adhesive sheet has a sheet material and an ultraviolet curable pressure-sensitive adhesive layer that adheres the sheet material and the bonding glass, and after the expansion process is finished, the pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet It has the ultraviolet irradiation process which irradiates an ultraviolet-ray and reduces the adhesive force of the said adhesion layer, It is characterized by the above-mentioned.
According to this configuration, it is possible to easily take out the piece of bonded glass pieces by reducing the adhesive strength of the adhesive layer.

In the cutting step, cleaving stress is applied from the one surface of the bonding glass.
According to this configuration, by applying a cleaving stress along the groove from one surface of the bonded glass, a large cleaving stress can be generated at the bottom top of the groove. As a result, the bonded glass can be cut more smoothly and easily, and a better cut surface can be obtained.

Moreover, the manufacturing method of the package which concerns on this invention is a method of manufacturing the package provided with the cavity which can enclose an electronic component inside the said joining glass using the cutting method of the joining glass of the said invention. In the cutting step, the bonding glass is cut along the planned cutting lines separating the formation regions of the plurality of packages, and in the expanding step, the adhesive sheet is stretched so that the spacing between adjacent packages is reduced. It is characterized by spreading.
According to this configuration, by manufacturing the package using the bonding glass cutting method of the present invention, when the pressure-sensitive adhesive sheet is stretched or when the separated package is taken out, the package contacts with the adjacent package. Etc. can be prevented.
Accordingly, chipping due to contact between adjacent packages can be prevented and cracking of the package can be prevented. Therefore, the number of packages taken out as a non-defective product from one bonded glass can be increased, and the yield can be improved.
In addition, since it is not necessary to perform a re-stretching step of the adhesive sheet prior to the expanding step, it is possible to prevent a decrease in manufacturing efficiency and an increase in manufacturing cost.

Further, a package according to the present invention is a package that is formed by using the bonding glass cutting method of the present invention, and includes a cavity capable of enclosing an electronic component inside the bonding glass, The other surface has a chamfered portion formed by cleaving the groove.
According to this configuration, when the cut package is taken out, chipping due to contact can be prevented even if a tool for taking out the package comes into contact with the corner of the package. The package never breaks. Thereby, airtightness in the cavity can be ensured, and a highly reliable package can be provided.
The chamfered part can be automatically formed by cutting along the groove (scheduled cutting line) after forming the groove with a laser, so each chamfered part is formed as a separate process in the package after cutting. Compared to the case, the chamfered portion can be formed quickly and easily. As a result, work efficiency can be improved.

The piezoelectric vibrator according to the present invention is characterized in that a piezoelectric vibrating piece is hermetically sealed in the cavity of the package of the present invention.
According to this configuration, it is possible to provide a highly reliable piezoelectric vibrator that ensures airtightness in the cavity and has excellent vibration characteristics.

  An oscillator according to the present invention is characterized in that the piezoelectric vibrator of the present invention is electrically connected to an integrated circuit as an oscillator.

  In addition, an electronic apparatus according to the present invention is characterized in that the piezoelectric vibrator of the present invention is electrically connected to a timer unit.

  A radio timepiece according to the present invention is characterized in that the piezoelectric vibrator of the present invention is electrically connected to a filter portion.

  Since the oscillator, electronic device, and radio timepiece according to the present invention include the above-described piezoelectric vibrator, a highly reliable product can be provided in the same manner as the piezoelectric vibrator.

According to the method for cutting bonded glass according to the present invention, the pressure-sensitive adhesive sheet is damaged due to laser light in the groove forming process or cleaving stress in the cutting process by using the pressure-sensitive adhesive sheet formed to have a thickness of 160 μm or more. Even if it receives, the influence by this damage can be permitted. That is, in the expanding step, the pressure-sensitive adhesive sheet can be prevented from being broken and the whole pressure-sensitive adhesive sheet can be uniformly stretched, so that contact between adjacent glass pieces can be prevented when the pressure-sensitive adhesive sheet is stretched. And since the space | interval of each joining glass piece can be expanded uniformly, adjacent joining glass pieces can be isolate | separated reliably. Therefore, when taking out the bonded glass pieces from the pressure-sensitive adhesive sheet after the expanding step, it becomes easy to recognize the individual bonded glass pieces (because recognition accuracy is improved), so that each bonded glass piece can be easily taken out.
Moreover, when taking out the bonded glass piece from the adhesive sheet after the expanding step, the contact with the adjacent bonded glass piece is prevented, the occurrence of chipping due to the contact between the bonded glass pieces is prevented, and the bonded glass piece is prevented from cracking. be able to. Therefore, it is possible to increase the number of pieces of bonded glass taken out as a non-defective product from one bonded glass, and it is possible to improve the yield.
Moreover, since there is no possibility that the adhesive sheet breaks or the like in the expanding process as described above, the adhesive sheet used in the groove forming process or the like can be used as it is in the expanding process without being replaced. That is, since it is not necessary to perform an adhesive sheet redrawing step or the like prior to the expanding step, it is possible to prevent a decrease in manufacturing efficiency and an increase in manufacturing cost.
On the other hand, by using the pressure-sensitive adhesive sheet having a thickness of 180 μm or less, the force required to stretch the pressure-sensitive adhesive sheet can be suppressed, and thus the production efficiency can be improved. Moreover, since it can procure easily in a market, the material cost which an adhesive sheet requires can be reduced.
Moreover, according to the manufacturing method of the package according to the present invention, by forming the package using the bonding glass cutting method of the present invention, it is possible to prevent the occurrence of chipping due to contact between adjacent packages, etc. Package cracking can be prevented. Therefore, the number of packages taken out as a non-defective product from one bonded glass can be increased, and the yield can be improved.
Further, according to the package of the present invention, since the package is formed using the bonding glass cutting method of the present invention, airtightness in the cavity can be ensured, and a highly reliable package is provided. can do.
In addition, according to the piezoelectric vibrator of the present invention, it is possible to provide a highly reliable piezoelectric vibrator that ensures airtightness in the cavity and has excellent vibration characteristics.
Since the oscillator, electronic device, and radio timepiece according to the present invention include the above-described piezoelectric vibrator, a highly reliable product can be provided in the same manner as the piezoelectric vibrator.

1 is an external perspective view showing an embodiment of a piezoelectric vibrator according to the present invention. FIG. 2 is an internal configuration diagram of the piezoelectric vibrator shown in FIG. 1, and is a view of a piezoelectric vibrating piece viewed from above with a lid substrate removed. FIG. 3 is a cross-sectional view of the piezoelectric vibrator taken along line AA shown in FIG. 2. FIG. 2 is an exploded perspective view of the piezoelectric vibrator shown in FIG. 1. It is a flowchart which shows the flow at the time of manufacturing the piezoelectric vibrator shown in FIG. FIG. 6 is a diagram illustrating a process for manufacturing a piezoelectric vibrator according to the flowchart illustrated in FIG. 5, in which the base substrate wafer and the lid substrate wafer are anodically bonded in a state where the piezoelectric vibrating piece is accommodated in the cavity. It is a disassembled perspective view of the wafer bonded body. It is a flowchart which shows the flow of an individualization process. It is a figure for demonstrating an individualization process, Comprising: It is sectional drawing which shows the state with which the wafer bonded body was hold | maintained at the magazine. It is a figure for demonstrating an individualization process, Comprising: It is sectional drawing which shows the state with which the wafer bonded body was hold | maintained at the magazine. It is a figure for demonstrating an individualization process, Comprising: It is sectional drawing which shows the state with which the wafer bonded body was hold | maintained at the magazine. It is a figure for demonstrating an individualization process, Comprising: It is sectional drawing which shows the state with which the wafer bonded body was hold | maintained at the magazine. It is a figure for demonstrating an individualization process, Comprising: It is sectional drawing which shows the state with which the wafer bonded body was hold | maintained at the magazine. It is a figure for demonstrating an individualization process, Comprising: It is sectional drawing which shows the state with which the wafer bonded body was hold | maintained at the magazine. It is explanatory drawing for demonstrating a trimming process, and is a top view of the wafer for base substrates which shows the state which removed the wafer for lid substrates of the wafer bonded body. It is a block diagram which shows one Embodiment of the transmitter which concerns on this invention. It is a block diagram which shows one Embodiment of the electronic device which concerns on this invention. It is a block diagram which shows one Embodiment of the radio timepiece which concerns on this invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(Piezoelectric vibrator)
FIG. 1 is an external perspective view of the piezoelectric vibrator according to the present embodiment, and FIG. 2 is an internal configuration diagram of the piezoelectric vibrator, and is a view of the piezoelectric vibrating piece viewed from above with the lid substrate removed. 3 is a cross-sectional view of the piezoelectric vibrator taken along line AA shown in FIG. 2, and FIG. 4 is an exploded perspective view of the piezoelectric vibrator.
As shown in FIGS. 1 to 4, the piezoelectric vibrator 1 is formed in a box shape in which a base substrate 2 and a lid substrate 3 are laminated in two layers, and the piezoelectric vibrating reed 5 is placed in an internal cavity C. A surface-mounted piezoelectric vibrator 1 is housed. The piezoelectric vibrating reed 5 and the external electrodes 6 and 7 installed outside the base substrate 2 are electrically connected by a pair of through electrodes 8 and 9 penetrating the base substrate 2.

  The base substrate 2 is formed in a plate shape with a transparent insulating substrate made of a glass material, for example, soda-lime glass. The base substrate 2 has a pair of through holes 21 and 22 in which a pair of through electrodes 8 and 9 are formed. The through-holes 21 and 22 have a tapered cross section in which the diameter gradually decreases from the outer end surface (lower surface in FIG. 3) of the base substrate 2 toward the inner end surface (upper surface in FIG. 3).

Similar to the base substrate 2, the lid substrate 3 is a transparent insulating substrate made of a glass material, for example, soda-lime glass, and is formed in a plate shape that can be superimposed on the base substrate 2. A rectangular recess 3 a for accommodating the piezoelectric vibrating reed 5 is formed on the bonding surface side of the lid substrate 3 to which the base substrate 2 is bonded.
The concave portion 3 a forms a cavity C that accommodates the piezoelectric vibrating piece 5 when the base substrate 2 and the lid substrate 3 are overlaid. The lid substrate 3 is anodically bonded to the base substrate 2 via a bonding layer 23 described later with the recess 3a facing the base substrate 2 side. A chamfered portion 90 in which a corner portion of the lid substrate 3 is chamfered is formed on the upper peripheral edge of the lid substrate 3 during a scribing process described later in the manufacturing process of the piezoelectric vibrator 1.

The piezoelectric vibrating piece 5 is a tuning fork type vibrating piece formed from a piezoelectric material such as quartz, lithium tantalate, or lithium niobate, and vibrates when a predetermined voltage is applied.
This piezoelectric vibrating piece 5 is a tuning fork type comprising a pair of vibrating arm portions 24 and 25 arranged in parallel and a base portion 26 that integrally fixes the base end sides of the pair of vibrating arm portions 24 and 25. On the outer surface of the vibrating arm portions 24, 25, there are formed an excitation electrode comprising a pair of first excitation electrode and second excitation electrode (not shown) for vibrating the vibrating arm portions 24, 25, and a first excitation electrode. And a pair of mount electrodes that electrically connect the second excitation electrode and routing electrodes 27 and 28 described later (both not shown).

  3 and 4, the piezoelectric vibrating reed 5 configured as described above is bumped on the lead-out electrodes 27 and 28 formed on the inner end face of the base substrate 2 by using the bump B such as gold. It is joined. More specifically, the first excitation electrode of the piezoelectric vibrating piece 5 is bump-bonded on one lead-out electrode 27 via one mount electrode and bump B, and the second excitation electrode is connected to the other mount electrode and Bump bonding is performed on the other lead-out electrode 28 via the bump B. As a result, the piezoelectric vibrating reed 5 is supported in a state where it floats from the inner end face of the base substrate 2, and the mount electrodes and the routing electrodes 27 and 28 are electrically connected to each other.

  A bonding layer 23 for anodic bonding made of a conductive material (for example, aluminum) is formed on the inner end surface side of the base substrate 2 (the bonding surface side to which the lid substrate 3 is bonded). The bonding layer 23 is formed to have a film thickness of, for example, about 3000 to 5000 mm, and is formed along the periphery of the base substrate 2 so as to surround the periphery of the recess 3 a formed in the lid substrate 3. The base substrate 2 and the lid substrate 3 are anodically bonded to the base substrate 2 via the bonding layer 23 with the recess 3a facing the bonding surface side of the base substrate 2.

  The external electrodes 6 and 7 are disposed at both ends in the longitudinal direction on the outer end surface of the base substrate 2, and are electrically connected to the piezoelectric vibrating reed 5 via the through electrodes 8 and 9 and the routing electrodes 27 and 28. It is connected. More specifically, one external electrode 6 is electrically connected to one mount electrode of the piezoelectric vibrating piece 5 through one through electrode 8 and one routing electrode 27. The other external electrode 7 is electrically connected to the other mount electrode of the piezoelectric vibrating piece 5 through the other through electrode 9 and the other lead-out electrode 28.

  The through-electrodes 8 and 9 are formed by the cylindrical body 32 and the core member 31 that are integrally fixed to the through-holes 21 and 22 by firing, and completely close the through-holes 21 and 22 to form a cavity. The airtightness in C is maintained, and the external electrodes 6 and 7 and the routing electrodes 27 and 28 are electrically connected. Specifically, one through electrode 8 is positioned below the lead-out electrode 27 between the external electrode 6 and the base portion 26, and the other through electrode 9 is between the external electrode 7 and the vibrating arm portion 25. Is located below the routing electrode 28.

The cylindrical body 32 is obtained by baking paste-like glass frit. The cylindrical body 32 is formed in a cylindrical shape having flat ends and substantially the same thickness as the base substrate 2. A core member 31 is arranged at the center of the cylinder 32 so as to penetrate the center hole of the cylinder 32. In the present embodiment, the outer shape of the cylindrical body 32 is formed in a conical shape (tapered cross section) in accordance with the shape of the through holes 21 and 22. The cylindrical body 32 is fired in a state of being embedded in the through holes 21 and 22, and is firmly fixed to the through holes 21 and 22.
The core material portion 31 described above is a conductive core material formed in a cylindrical shape from a metal material, and both ends are flat like the cylindrical body 32 and have a thickness substantially the same as the thickness of the base substrate 2. Is formed.
The through electrodes 8 and 9 are ensured to have electrical conductivity through the conductive core portion 31.

  When the piezoelectric vibrator 1 configured as described above is operated, a predetermined drive voltage is applied to the external electrodes 6 and 7 formed on the base substrate 2. As a result, a current can be passed through each excitation electrode of the piezoelectric vibrating piece 5, and the pair of vibrating arm portions 24 and 25 can be vibrated at a predetermined frequency in a direction in which the pair of vibrating arm portions 24 and 25 approaches and separates. The vibration of the pair of vibrating arm portions 24 and 25 can be used as a time source, a control signal timing source, a reference signal source, or the like.

(Piezoelectric vibrator manufacturing method)
Next, a method for manufacturing the piezoelectric vibrator described above will be described with reference to the flowchart shown in FIG.
First, as shown in FIG. 5, the piezoelectric vibrating reed manufacturing process is performed to manufacture the piezoelectric vibrating reed 5 shown in FIGS. 1 to 4 (S <b> 10). Further, after the piezoelectric vibrating piece 5 is manufactured, the resonance frequency is coarsely adjusted. Note that fine adjustment for adjusting the resonance frequency with higher accuracy is performed after mounting.

(First wafer creation process)
FIG. 6 is an exploded perspective view of the wafer bonded body in which the base substrate wafer and the lid substrate wafer are anodically bonded in a state where the piezoelectric vibrating piece is accommodated in the cavity.
Next, as shown in FIGS. 5 and 6, a first wafer manufacturing step is performed in which a lid substrate wafer 50 to be the lid substrate 3 later is manufactured up to a state just before anodic bonding (S20). Specifically, after polishing and cleaning soda-lime glass to a predetermined thickness, a disk-shaped lid substrate wafer 50 is formed by removing the outermost work-affected layer by etching or the like (S21). Next, a recess forming step is performed for forming a plurality of recesses 3a for the cavity C in the matrix direction by etching or the like on the inner end surface 50a (the lower surface in FIG. 6) of the lid substrate wafer 50 (S22).
Next, in order to ensure airtightness with the base substrate wafer 40 to be described later, a polishing step (at least polishing the inner end face 50a side of the lid substrate wafer 50 to be a joint surface with the base substrate wafer 40) S23) is performed to mirror the inner end face 50a. Thus, the second wafer creation process (S20) is completed.

(Second wafer creation process)
Next, a first wafer manufacturing process is performed in which the base substrate wafer 40 to be the base substrate 2 later is manufactured up to the state immediately before anodic bonding (S30). First, after polishing and washing soda-lime glass to a predetermined thickness, a disk-shaped base substrate wafer 40 is formed by removing the outermost work-affected layer by etching or the like (S31). Next, a through-hole forming step is performed in which a plurality of through-holes 21 and 22 for arranging the pair of through-electrodes 8 and 9 are formed on the base substrate wafer by, for example, pressing (S32). More specifically, after forming a recess from the outer end surface 40b of the base substrate wafer 40 by pressing or the like, the recess is penetrated by polishing at least from the inner end surface 40a side of the base substrate wafer 40, and the through hole 21 , 22 can be formed.

  Subsequently, a through electrode forming step (S33) for forming the through electrodes 8 and 9 in the through holes 21 and 22 formed in the through hole forming step (S32) is performed. As a result, in the through holes 21 and 22, the core member 31 is held flush with both end surfaces 40 a and 40 b (upper and lower surfaces in FIG. 6) of the base substrate wafer 40. Thus, the through electrodes 8 and 9 can be formed.

  Next, a conductive material is patterned on the inner end face 40a of the base substrate wafer 40 to perform a bonding layer forming step for forming the bonding layer 23 (S34), and a lead electrode forming step is performed (S35). The bonding layer 23 is formed over a region other than the formation region of the cavity C in the base substrate wafer 40, that is, the entire bonding region with the inner end face 50 a of the lid substrate wafer 50. In this way, the second wafer manufacturing process (S30) is completed.

  Next, the piezoelectric vibrating reeds 5 created in the piezoelectric vibrating reed creating step (S10) are respectively formed on the routing electrodes 27 and 28 of the base substrate wafer 40 created in the second wafer creating step (S30). It mounts via bumps B, such as gold (S40). Then, an overlaying step is performed in which the base substrate wafer 40 and the lid substrate wafer 50 created in the above-described production steps of the wafers 40 and 50 are overlaid (S50). Specifically, both wafers 40 and 50 are aligned at the correct positions while using a reference mark (not shown) as an index. As a result, the mounted piezoelectric vibrating reed 5 is housed in a cavity C surrounded by the recess 3 a formed in the lid substrate wafer 50 and the base substrate wafer 40.

  After the superposition process, the two superposed wafers 40 and 50 are put into an anodic bonding apparatus (not shown), and a predetermined voltage is applied in a predetermined temperature atmosphere with the outer peripheral portion of the wafer clamped by a holding mechanism (not shown). Then, a bonding step for anodic bonding is performed (S60). Specifically, a predetermined voltage is applied between the bonding layer 23 and the lid substrate wafer 50. As a result, an electrochemical reaction occurs at the interface between the bonding layer 23 and the lid substrate wafer 50, and the two are firmly adhered to each other and anodic bonded. Thereby, the piezoelectric vibrating reed 5 can be sealed in the cavity C, and the wafer bonded body 60 in which the base substrate wafer 40 and the lid substrate wafer 50 are bonded can be obtained. Then, the two wafers 40 and 50 are anodically bonded as in the present embodiment, so that the deterioration due to deterioration with time, impact, etc., and the wafer bonded body, compared with the case where the two wafers 40 and 50 are bonded with an adhesive or the like. Therefore, the wafers 40 and 50 can be bonded more firmly.

  Thereafter, a pair of external electrodes 6 and 7 electrically connected to the pair of through electrodes 8 and 9 are formed (S70), and the frequency of the piezoelectric vibrator 1 is finely adjusted (S80).

(Individualization process)
FIG. 7 is a flowchart showing the procedure of the wafer singulation process. 8 to 13 are cross-sectional views showing a state in which the wafer bonded body is held in the magazine, and are process diagrams for explaining the singulation process.
After the fine adjustment of the frequency is completed, an individualization process is performed for cutting and bonding the bonded wafer bonded body 60 (S90).
In the singulation step (S90), as shown in FIGS. 7 and 8, first, a magazine 82 for holding the wafer bonded body 60 is created using the UV tape 80 and the ring frame 81 (S91). The ring frame 81 is a ring-shaped member having an inner diameter larger than the diameter of the wafer bonded body 60, and has a thickness (length in the axial direction) equivalent to that of the wafer bonded body 60. . The UV tape 80 is obtained by applying a UV curable resin, for example, an acrylic adhesive (adhesive layer) to a sheet material made of polyolefin. Specifically, UHP-1525M3 manufactured by Denki Kagaku Kogyo, or Lintec D510T or the like is preferably used. Moreover, it is preferable to use a UV tape 80 having a relatively large thickness, and specifically, it is preferable to use a UV tape having a thickness of about 160 μm to 180 μm. In the present embodiment, for example, a UV tape 80 of about 175 μm is preferably used.

  The magazine 82 can be created by attaching the UV tape 80 from one surface 81a of the ring frame 81 so as to close the through hole 81b. Then, the wafer bonded body 60 is adhered to the adhesive surface of the UV tape 80 in a state where the central axis of the ring frame 81 and the central axis of the wafer bonded body 60 are matched (S92). Specifically, the outer end surface 40 b side (external electrode side) of the base substrate wafer 40 is attached to the adhesive surface of the UV tape 80. As a result, the wafer bonded body 60 is set in the through hole 81 b of the ring frame 81. In this state, the wafer bonded body 60 is transferred to a laser scribing device (not shown) (S93).

FIG. 14 is an explanatory diagram for explaining the trimming process, and is a plan view of the base substrate wafer showing a state in which the lid substrate wafer of the wafer bonded body is removed.
Here, as shown in FIGS. 9 and 14, a trimming step is performed to peel off the bonding layer 23 bonding the lid substrate wafer 50 and the base substrate wafer 40 (S94). In the trimming step (S94), a laser that emits light having an absorption band wavelength of the bonding layer 23, for example, a first laser 87 made of a second harmonic laser having a wavelength of 532 nm is used, and the bonding layer 23 in the irradiation region of the laser light R1 is used. To melt. In this case, the laser beam R1 emitted from the first laser 87 is reflected by a beam scanner (galvanometer) and then condensed through an Fθ lens. The laser beam R1 and the wafer bonded body 60 are relatively moved in parallel while irradiating the condensed laser light R1 from the outer end face 50b (the other surface) side of the lid substrate wafer 50 in the wafer bonded body 60. . Specifically, the first laser 87 is scanned along the partition walls that partition the cavities C, that is, along the contour line (scheduled cutting line) M (see FIG. 6) of the piezoelectric vibrator 1.

The spot diameter of the laser beam R1 in the trimming step (S94) is set to about 10 μm or more and 30 μm or less, for example. As other conditions for the trimming step (S94), for example, it is preferable to set the processing point average output of the first laser 87 to 1.0 W, the frequency modulation to 20 kHz, and the scanning speed to about 200 mm / sec.
As a result, the bonding layer 23 on the contour line M absorbs the laser beam R1 and is heated, so that the bonding layer 23 melts and contracts outward from the irradiation region (contour line M) of the laser beam R1. As a result, a trimming line T in which the bonding layer 23 is peeled off from the bonding surface is formed on the bonding surfaces of the wafers 40 and 50 (the inner end surface 50a of the lid substrate wafer 50 and the inner end surface 40a of the base substrate wafer 40). It is formed.

  Next, as shown in FIG. 10, the surface layer portion of the outer end face 50b of the lid substrate wafer 50 is irradiated with the laser beam R2 to form a scribe line M 'on the wafer bonded body 60 (S95: scribe process). In the scribing step (S95), a laser that emits light having an absorption band wavelength of the lid substrate wafer 50 (soda lime glass), for example, a second laser 88 made of a UV-Deep laser having a wavelength of 266 nm is used. The surface layer portion of the lid substrate wafer 50 is melted. Specifically, as in the trimming step (S 94), the second laser 88 and the wafer bonded body 60 are relatively moved in parallel, and the second laser 88 is scanned along the contour line M of the piezoelectric vibrator 1. Then, the surface layer portion of the lid substrate wafer 50 absorbs the laser beam R2 and is heated, so that the lid substrate wafer 50 is melted and a V-groove scribe line M 'is formed. As described above, the first laser 87 and the second laser 88 are scanned along the contour line M of each piezoelectric vibrator 1. Thus, the trimming line T and the scribe line M ′ from which the bonding layer 23 has been peeled are arranged so as to overlap each other when the wafer bonded body 60 is viewed from the thickness direction.

  The scribe line M ′ of this embodiment is formed with a width dimension of about 14 μm and a depth dimension of about 11 μm. More preferably, the magnification of the depth dimension D with respect to the width dimension W is set to be equal. The other conditions of the scribing step (S95) include, for example, the processing point output of the second laser 88 is 250 mW to 600 mW, the pulse energy is 100 μJ, the processing threshold fluence is 30 J / (cm 2 · pulse), and the scanning speed is 40 mm / It is preferable to set to about sec to 60 mm / sec.

Next, a cutting process of cutting the wafer bonded body 60 on which the scribe line M ′ is formed into each piezoelectric vibrator 1 is performed (S100).
In the cutting step (S100), first, as shown in FIG. 11, a separator 83 is attached to the other surface 81c of the ring frame 81 so as to close the through hole 81b (S101). The separator 83 protects the outer end face 50b of the lid substrate wafer 50 in the braking step (S103), and is formed to a thickness of 20 μm or more and 30 μm or less by a polyethylene terephthalate film (so-called PET material) or the like. ing. If the thickness of the separator 83 is less than 20 μm, the separator 83 may be cut together with the wafer bonded body 60 in the braking step (S103) described later, which is not preferable. On the other hand, when the thickness of the separator 83 is larger than 30 μm, the cleaving stress acting on the wafer bonded body 60 from the separator 83 is relaxed by the separator 83, the wafer bonded body 60 is not cut smoothly, and the surface accuracy of the cut surface is increased. Since there is a possibility of lowering, it is not preferable.

  The wafer bonded body 60 is held in the through hole 81b of the ring frame 81 in a state of being sandwiched between the UV tape 80 and the separator 83. In this state, the wafer bonded body 60 is transferred into the braking device (S102).

  Next, a breaking step of applying cleaving stress is performed on the wafer bonded body 60 conveyed into the braking device (S103). In the breaking step (S103), a cutting blade 70 having a blade length longer than the diameter of the wafer bonded body 60 (the blade edge angle θ is, for example, 80 degrees to 100 degrees) is prepared, and the cutting blade 70 is used as a base substrate wafer. After aligning with the scribe line M ′ (trimming line T) from the outer end surface 40 b (one surface) side of 40, the cutting edge of the cutting blade 70 is brought into contact with the outer end surface 40 b of the base substrate wafer 40. Then, a predetermined cleaving stress (for example, 10 kg / inch) is applied to the wafer bonded body 60 along the thickness direction (contour line M) of the wafer bonded body 60. In FIG. 11, reference numeral 71 denotes a silicon rubber (for example, about 2 mm thick) on which the wafer bonded body 60 is set in the braking apparatus.

  As a result, a crack is generated in the wafer bonded body 60 along the thickness direction, and the wafer bonded body 60 is cut so as to be folded along the scribe line M ′ formed on the lid substrate wafer 50. Then, by pressing the cutting blade 70 for each scribe line M ′, the wafer bonded body 60 can be collectively separated into packages for each contour line M. Thereafter, the separator 83 attached to the wafer bonded body 60 is peeled off (S104). As in the present embodiment, in the braking step (S103), cleaving stress is applied along the scribe line M ′ from the opposite side of the scribe line M ′ forming surface, that is, from the outer end surface 40b of the base substrate wafer 40. Thus, a large cleaving stress can be generated at the bottom top of the scribe line M ′. Thereby, since the wafer bonded body 60 can be cut more smoothly and easily, a better cut surface can be obtained. The cleaving stress described above is a tensile stress generated in a direction away from the scribe line M (a direction in which each piezoelectric vibrator 1 is separated).

  Next, a pick-up process for taking out the separated piezoelectric vibrator 1 is performed (S110). In the pickup step (S110), first, the UV tape 80 of the magazine 82 is irradiated with UV to slightly reduce the adhesive strength of the UV tape 80 (S111). In this state, the wafer bonded body 60 is still attached to the UV tape 80.

Next, in order to perform an expanding step (S113) described later, as shown in FIG. 12, the wafer bonded body 60 is transferred into the expanding device 91 (S112). First, the expanding device 91 will be described.
The expanding device 91 includes an annular base ring 92 on which the ring frame 81 is set, and a disk-shaped heater panel 93 disposed inside the base ring 92 and having a larger diameter than the wafer bonded body 60. I have. The heater panel 93 has a heat transfer type heater (not shown) mounted on a base plate 94 on which the wafer bonded body 60 is set, so that the central axis of the heater panel 93 coincides with the central axis of the base ring 92. Is arranged. The heater panel 93 is configured to be movable along the axial direction by a driving means (not shown). Although not shown, the expanding device 91 also includes a pressing member that clamps the ring frame 81 set on the base ring 92 with the base ring 92.

  In order to perform the expanding step (S113) using such an apparatus, first, before setting the wafer bonded body 60 to the expanding apparatus 91, the inner ring 85a of the grip ring 85 described later is placed outside the heater panel 93. set. At this time, the inner ring 85 is fixed to the heater panel 93 and is set to move together when the heater panel 93 moves. The grip ring 85 is a resin ring having an inner diameter larger than the outer diameter of the heater panel 93 and smaller than the inner diameter of the through-hole 81b of the ring frame 81. The inner ring 85a and the inner ring have an inner diameter. An outer ring 85b (see FIG. 13) formed to have the same outer diameter as 85a. That is, the inner ring 85a fits inside the outer ring 85b.

  Thereafter, the wafer bonded body 60 fixed to the magazine 82 is set in the expanding device 91. At this time, the wafer bonded body 60 is set with the UV tape 80 side facing the heater panel 93 and the base ring 92. Specifically, the wafer bonded body 60 is expanded in a state where the outer end surface 40b of the wafer bonded body 60 and the heater panel 93 are opposed to each other and the one surface 81a of the ring frame 81 is opposed to the base ring 92. Set to. As a result, the wafer bonded body 60 is set on the heater panel 93 via the UV tape 80. Then, the ring frame 81 is held between the base ring 92 and a pressing member (not shown).

  Next, the UV tape 80 is heated to 50 ° C. or higher by the heater of the heater panel 93. By heating the UV tape 80 to 50 ° C. or higher, the UV tape 80 is softened and easily stretched. Then, as shown in FIG. 13, the heater panel 93 is raised together with the inner ring 85a in a state where the UV tape 80 is heated (see the arrow in FIG. 13). At this time, since the ring frame 81 is sandwiched between the base ring 92 and the pressing member, the UV tape 80 extends outward in the radial direction of the wafer bonded body 60. Thereby, the piezoelectric vibrators 1 adhered to the UV tape 80 are separated from each other, and the space between the adjacent piezoelectric vibrators 1 is expanded. In this state, the outer ring 85b is set outside the inner ring 85a. Specifically, both are fitted together with the UV tape 80 sandwiched between the inner ring 85a and the outer ring 85b. Thereby, the UV tape 80 is held by the grip ring 85 in a stretched state. Then, the UV tape 80 outside the grip ring 85 is cut, and the ring frame 81 and the grip ring 85 are separated (S114).

Thereafter, the UV tape 80 is again irradiated with UV to further reduce the adhesive strength of the UV tape 80 (S115: UV irradiation step). Thereby, the piezoelectric vibrator 1 is peeled from the UV tape 80. Thereafter, the position of each piezoelectric vibrator 1 is grasped by image recognition or the like, and sucked by a nozzle or the like, whereby the piezoelectric vibrator 1 peeled from the UV tape 80 is taken out. In this way, by irradiating the UV tape 80 with UV and peeling the piezoelectric vibrator 1 from the UV tape 80, it is possible to easily take out the separated piezoelectric vibrator 1. In the present embodiment, in the above-described braking step (S103), the lid substrate 3 of the piezoelectric vibrator 1 separated into individual pieces is obtained because the individual pieces are separated along the scribe line M ′ of the lid substrate wafer 50. A chamfered portion 90 that is C-chamfered by a scribe line M ′ is formed at the upper peripheral edge.
As described above, the piezoelectric vibration piece 5 is sealed in the cavity C formed between the base substrate 2 and the lid substrate 3 which are anodic bonded to each other, and the two-layer structure surface mount type piezoelectric vibration shown in FIG. A plurality of children 1 can be manufactured at a time.

  Then, as shown in FIG. 5, an internal electrical property inspection is performed (S120). That is, the resonance frequency, resonance resistance value, drive level characteristic (excitation power dependency of the resonance frequency and resonance resistance value), etc. of the piezoelectric vibrating piece 5 are measured and checked. In addition, the insulation resistance characteristics and the like are also checked. Finally, an appearance inspection of the piezoelectric vibrator 1 is performed to finally check dimensions, quality, and the like. This completes the manufacture of the piezoelectric vibrator 1.

Thus, in the present embodiment, the UV tape 80 having a thickness of 160 μm or more and 180 μm is used.
According to this configuration, by using the UV tape 80 having a thickness of 160 μm or more, the UV tape 80 is temporarily generated by the laser light R2 in the scribing process (S95) or the cleaving stress in the braking process (S103). Even if it is damaged, the influence of this damage can be tolerated. That is, in the expanding step (S113), the UV tape 80 can be prevented from being broken and the entire UV tape 80 can be stretched evenly, so that the adjacent piezoelectric vibrators 1 can be brought into contact with each other when the UV tape 80 is stretched. Can be prevented. And since the space | interval of each piezoelectric vibrator 1 can be expanded uniformly, the adjacent piezoelectric vibrators 1 can be reliably isolate | separated. Accordingly, when the piezoelectric vibrators 1 are taken out from the UV tape 80 after the expanding step (S113), the piezoelectric vibrators 1 that have been separated into pieces can be easily recognized (because the recognition accuracy is improved). It can be easily taken out.
Further, when the piezoelectric vibrator 1 is taken out from the UV tape 80 after the expanding step (S113), the contact with the adjacent piezoelectric vibrators 1 is prevented, and the occurrence of chipping due to the contact between the piezoelectric vibrators 1 is prevented. The crack of the piezoelectric vibrator 1 can be prevented. Therefore, the number of piezoelectric vibrators 1 taken out as a non-defective product from one wafer bonded body 60 can be increased, and the yield can be improved.

Further, as described above, there is no possibility that the UV tape 80 breaks or the like in the expanding step (S113). Therefore, the UV tape 80 used in the scribe step (S95) or the like is not replaced, and the expanding step (S113) is performed as it is. Can be used. That is, since it is not necessary to perform a UV tape 80 replacement process or the like prior to the expanding process (S113), it is possible to prevent a decrease in manufacturing efficiency and an increase in manufacturing cost.
On the other hand, since the force required to stretch the UV tape 80 can be suppressed by using the UV tape 80 having a thickness of 180 μm or less, manufacturing efficiency can be improved. Moreover, since it can be procured easily in the market, the material cost required for the UV tape 80 can be reduced.

  Furthermore, in the present embodiment, in the expanding step (S113), since the UV tape 80 is stretched while being heated by the heater panel 93, the UV tape 80 is softened and easily stretched. Therefore, breakage of the UV tape 80 in the expanding step (S113) can be reliably prevented, and the entire UV tape 80 can be stretched evenly.

  Prior to the scribing step (S95), the bonding layer 23 on the contour line M is peeled to form the trimming line T, thereby promoting the progress of cracks in the thickness direction of the wafer bonded body 60 during braking. Further, it is possible to prevent the progress of cracks in the surface direction of the wafer bonded body 60.

In addition, the lid substrate 3 of the piezoelectric vibrator 1 according to the present embodiment has a configuration in which a chamfered portion 90 is formed on the peripheral portion thereof.
According to this configuration, in the pickup step (S110), when the piezoelectric vibrator 1 that has been separated into pieces is taken out, the instrument for taking out the piezoelectric vibrator 1 comes into contact with the corner of the piezoelectric vibrator 1 Even so, the occurrence of chipping due to contact can be prevented. Therefore, the piezoelectric vibrator 1 is not broken by the chipping.
Thereby, the airtightness in the cavity C can be ensured, and the highly reliable piezoelectric vibrator 1 having excellent vibration characteristics can be provided.
The chamfered portion 90 can be automatically formed by forming the scribe line M ′ with the second laser 88 and then cutting along the scribe line M ′. As compared with the case where the chamfered portions 90 are formed, the chamfered portions 90 can be formed quickly and easily. As a result, work efficiency can be improved.

(Oscillator)
Next, an embodiment of an oscillator according to the present invention will be described with reference to FIG.
As shown in FIG. 15, the oscillator 100 according to the present embodiment is configured by configuring the piezoelectric vibrator 1 as an oscillator electrically connected to the integrated circuit 101. The oscillator 100 includes a substrate 103 on which an electronic component 102 such as a capacitor is mounted. On the substrate 103, the above-described integrated circuit 101 for the oscillator is mounted, and the piezoelectric vibrator 1 is mounted in the vicinity of the integrated circuit 101. The electronic component 102, the integrated circuit 101, and the piezoelectric vibrator 1 are electrically connected by a wiring pattern (not shown). Each component is molded with a resin (not shown).

In the oscillator 100 configured as described above, when a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating piece 5 in the piezoelectric vibrator 1 vibrates. This vibration is converted into an electric signal by the piezoelectric characteristics of the piezoelectric vibrating piece 5 and input to the integrated circuit 101 as an electric signal. The input electrical signal is subjected to various processes by the integrated circuit 101 and is output as a frequency signal. Thereby, the piezoelectric vibrator 1 functions as an oscillator.
Further, by selectively setting the configuration of the integrated circuit 101, for example, an RTC (real-time clock) module or the like according to a request, the operation date and time of the device and the external device in addition to a single-function oscillator for a clock, etc. A function for controlling the time, providing a time, a calendar, and the like can be added.

  As described above, according to the oscillator 100 of this embodiment, since the high-quality piezoelectric vibrator 1 is provided, the quality of the oscillator 100 itself can be improved in the same manner. In addition to this, it is possible to obtain a highly accurate frequency signal that is stable over a long period of time.

(Electronics)
Next, an embodiment of an electronic apparatus according to the present invention will be described with reference to FIG. Note that the portable information device 110 having the above-described piezoelectric vibrator 1 will be described as an example of the electronic device. First, the portable information device 110 according to the present embodiment is represented by, for example, a mobile phone, and is a development and improvement of a wrist watch in the related art. The appearance is similar to that of a wristwatch, and a liquid crystal display is arranged in a portion corresponding to a dial so that the current time and the like can be displayed on this screen. Further, when used as a communication device, it is possible to perform communication similar to that of a conventional mobile phone by using a speaker and a microphone that are removed from the wrist and incorporated in the inner portion of the band. However, it is much smaller and lighter than conventional mobile phones.

  Next, the configuration of the portable information device 110 of this embodiment will be described. As shown in FIG. 16, the portable information device 110 includes the piezoelectric vibrator 1 and a power supply unit 111 for supplying power. The power supply unit 111 is made of, for example, a lithium secondary battery. The power supply unit 111 includes a control unit 112 that performs various controls, a clock unit 113 that counts time, a communication unit 114 that communicates with the outside, a display unit 115 that displays various types of information, A voltage detection unit 116 that detects the voltage of the functional unit is connected in parallel. The power unit 111 supplies power to each functional unit.

  The control unit 112 controls each function unit to control operation of the entire system such as transmission and reception of audio data, measurement and display of the current time, and the like. The control unit 112 includes a ROM in which a program is written in advance, a CPU that reads and executes the program written in the ROM, and a RAM that is used as a work area of the CPU.

  The time measuring unit 113 includes an integrated circuit including an oscillation circuit, a register circuit, a counter circuit, an interface circuit, and the like, and the piezoelectric vibrator 1. When a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating reed 5 vibrates, and this vibration is converted into an electric signal by the piezoelectric characteristics of the crystal and is input to the oscillation circuit as an electric signal. The output of the oscillation circuit is binarized and counted by a register circuit and a counter circuit. Then, signals are transmitted to and received from the control unit 112 via the interface circuit, and the current time, current date, calendar information, or the like is displayed on the display unit 115.

The communication unit 114 has functions similar to those of a conventional mobile phone, and includes a radio unit 117, a voice processing unit 118, a switching unit 119, an amplification unit 120, a voice input / output unit 121, a telephone number input unit 122, and a ring tone generation unit. 123 and a call control memory unit 124.
The wireless unit 117 exchanges various data such as audio data with the base station via the antenna 125. The audio processing unit 118 encodes and decodes the audio signal input from the radio unit 117 or the amplification unit 120. The amplifying unit 120 amplifies the signal input from the audio processing unit 118 or the audio input / output unit 121 to a predetermined level. The voice input / output unit 121 includes a speaker, a microphone, and the like, and amplifies a ringtone and a received voice or collects a voice.

In addition, the ring tone generator 123 generates a ring tone in response to a call from the base station. The switching unit 119 switches the amplifying unit 120 connected to the voice processing unit 118 to the ringing tone generating unit 123 only when an incoming call is received, so that the ringing tone generated in the ringing tone generating unit 123 is transmitted via the amplifying unit 120. To the audio input / output unit 121.
The call control memory unit 124 stores a program related to incoming / outgoing call control of communication. The telephone number input unit 122 includes, for example, a number key from 0 to 9 and other keys. By pressing these number keys and the like, a telephone number of a call destination is input.

  When the voltage applied to each functional unit such as the control unit 112 by the power supply unit 111 falls below a predetermined value, the voltage detection unit 116 detects the voltage drop and notifies the control unit 112 of the voltage drop. . The predetermined voltage value at this time is a value set in advance as a minimum voltage necessary for stably operating the communication unit 114, and is, for example, about 3V. Upon receiving the voltage drop notification from the voltage detection unit 116, the control unit 112 prohibits the operations of the radio unit 117, the voice processing unit 118, the switching unit 119, and the ring tone generation unit 123. In particular, it is essential to stop the operation of the wireless unit 117 with high power consumption. Further, the display unit 115 displays that the communication unit 114 has become unusable due to insufficient battery power.

That is, the operation of the communication unit 114 can be prohibited by the voltage detection unit 116 and the control unit 112, and that effect can be displayed on the display unit 115. This display may be a text message, but as a more intuitive display, a x (X) mark may be attached to the telephone icon displayed at the top of the display surface of the display unit 115.
In addition, the function of the communication part 114 can be stopped more reliably by providing the power supply cutoff part 126 that can selectively cut off the power of the part related to the function of the communication part 114.

  As described above, according to the portable information device 110 of the present embodiment, since the quality-enhanced piezoelectric vibrator 1 is provided, the quality of the portable information device itself can be improved as well. In addition to this, it is possible to display highly accurate clock information that is stable over a long period of time.

Next, an embodiment of a radio timepiece according to the present invention will be described with reference to FIG.
As shown in FIG. 17, the radio timepiece 130 of this embodiment includes the piezoelectric vibrator 1 that is electrically connected to the filter unit 131. The radio timepiece 130 receives a standard radio wave including timepiece information and is accurate. It is a clock with a function of automatically correcting and displaying the correct time.
In Japan, there are transmitting stations (transmitting stations) that transmit standard radio waves in Fukushima Prefecture (40 kHz) and Saga Prefecture (60 kHz), each transmitting standard radio waves. Long waves such as 40 kHz or 60 kHz have the property of propagating the surface of the earth and the property of propagating while reflecting the ionosphere and the surface of the earth, so the propagation range is wide, and the above two transmitting stations cover all of Japan. is doing.

(Radio watch)
Hereinafter, the functional configuration of the radio timepiece 130 will be described in detail.
The antenna 132 receives a long standard wave of 40 kHz or 60 kHz. The long-wave standard radio wave is obtained by subjecting time information called a time code to AM modulation on a 40 kHz or 60 kHz carrier wave. The received long standard wave is amplified by the amplifier 133 and filtered and tuned by the filter unit 131 having the plurality of piezoelectric vibrators 1.
The piezoelectric vibrator 1 in this embodiment includes crystal vibrator portions 138 and 139 having resonance frequencies of 40 kHz and 60 kHz that are the same as the carrier frequency described above.

Further, the filtered signal having a predetermined frequency is detected and demodulated by the detection and rectification circuit 134.
Subsequently, the time code is taken out via the waveform shaping circuit 135 and counted by the CPU 136. The CPU 136 reads information such as the current year, accumulated date, day of the week, and time. The read information is reflected in the RTC 137, and accurate time information is displayed.
Since the carrier wave is 40 kHz or 60 kHz, the crystal vibrator units 138 and 139 are preferably vibrators having the tuning fork type structure described above.

  In addition, although the above-mentioned description was shown in the example in Japan, the frequency of the long standard wave is different overseas. For example, in Germany, a standard radio wave of 77.5 KHz is used. Accordingly, when the radio timepiece 130 that can be used overseas is incorporated in a portable device, the piezoelectric vibrator 1 having a frequency different from that in Japan is required.

  As described above, according to the radio timepiece 130 of the present embodiment, since the high quality piezoelectric vibrator 1 is provided, the quality of the radio timepiece itself can be improved in the same manner. In addition to this, it is possible to count time stably and with high accuracy over a long period of time.

As mentioned above, although embodiment of this invention was explained in full detail with reference to drawings, the concrete structure is not restricted to this embodiment, The design change etc. of the range which does not deviate from the summary of this invention are included.
For example, in the above-described embodiment, the tuning fork type piezoelectric vibrating piece 5 has been described as an example, but is not limited to the tuning fork type. For example, it may be a thickness sliding vibration piece.

In the above-described embodiment, the scribe line M ′ is formed on the outer end surface 50 b of the lid substrate wafer 50 in the cutting step, while the cutting blade 70 is pressed from the outer end surface 40 b of the base substrate wafer 40. However, it is not limited to this. For example, the scribe line M ′ may be formed on the outer end surface 40 b of the base substrate wafer 40, while the cutting blade 70 may be pressed from the outer end surface 50 b of the lid substrate wafer 50.
Further, the recess 3a may be formed in the base substrate wafer 40, or the recess 3a may be formed in both the wafers 40 and 50, respectively.

DESCRIPTION OF SYMBOLS 1 ... Piezoelectric vibrator (package, bonded glass piece) 2 ... Base substrate (glass substrate) 3 ... Lid substrate (glass substrate) 4 ... Piezoelectric vibrating piece (electronic component) 23 ... Bonding film (bonding material) 60 ... Wafer bonded body (Bonded glass) 80 ... UV tape (adhesive sheet) 100 ... oscillator 110 ... portable information device (electronic device) 130 ... radio clock C ... cavity M '... scribe line (groove)

Claims (10)

A bonded glass that cuts the bonded glass along a planned cutting line in a state where an adhesive sheet is attached to one surface of the bonded glass formed by bonding bonded surfaces of a plurality of glass substrates through a bonding material. Cutting method,
A groove forming step of irradiating a laser beam having an absorption wavelength of the bonding glass along the planned cutting line to form a groove on the other surface of the bonding glass;
A cutting step in which the joining glass is separated into a plurality of joining glass pieces by cutting the joining glass by applying a cleaving stress along the planned cutting line;
By extending the pressure-sensitive adhesive sheet, and having an expanding step to widen the interval between the adjacent bonded glass pieces,
The adhesive sheet is formed to have a thickness of 160 μm or more and 180 μm or less.   The method for cutting a bonded glass according to claim 1, wherein in the expanding step, the pressure-sensitive adhesive sheet is stretched while the pressure-sensitive adhesive sheet is heated to 50 ° C. or more. The pressure-sensitive adhesive sheet has a sheet material and an ultraviolet curable pressure-sensitive adhesive layer that adheres the sheet material and the bonding glass,
3. The method according to claim 1, further comprising an ultraviolet irradiation step of irradiating the pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet with ultraviolet rays after the expanding step to reduce the pressure-sensitive adhesive force of the pressure-sensitive adhesive layer. Cutting method of bonded glass.   The cutting method according to any one of claims 1 to 3, wherein in the cutting step, cleaving stress is applied from the one surface of the bonded glass. A method for producing a package having a cavity capable of enclosing an electronic component inside the bonding glass, using the bonding glass cutting method according to any one of claims 1 to 4,
In the cutting step, the bonding glass is cut along the planned cutting line separating a plurality of package formation regions,
In the expanding step, the adhesive sheet is stretched to widen the interval between the adjacent packages. A package comprising a cavity capable of enclosing an electronic component inside the bonding glass, formed using the bonding glass cutting method according to any one of claims 1 to 4,
A package comprising a chamfered portion formed by cleaving the groove on the other surface of the bonding glass.   7. A piezoelectric vibrator, wherein a piezoelectric vibrating piece is hermetically sealed in the cavity of the package according to claim 6.   The oscillator according to claim 7, wherein the piezoelectric vibrator is electrically connected to an integrated circuit as an oscillator.   The electronic device according to claim 7, wherein the piezoelectric vibrator is electrically connected to a timing unit.   8. A radio timepiece wherein the piezoelectric vibrator according to claim 7 is electrically connected to a filter portion.

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