JP2011035008A - Substrate heating apparatus, heating method, and semiconductor device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate heating apparatus improving a temperature distribution when a substrate is heated by equalizing the discharge of thermal electrons onto a substrate surface to be heated. <P>SOLUTION: The substrate heating apparatus is arranged to face a substrate held in a container under a reduced pressure and has a conductive heater which heats the substrate. The substrate heating apparatus includes a filament arranged in the conductive heater and connected to a filament power supply to generate thermal electrons, and an acceleration power supply which accelerates the thermal electrons between the filament and conductive heater. The filament is supported by a filament base with the use of a plurality of supporters. The first end of the filament is connected to a first power introduction rod and connected to the acceleration power supply via the first power introduction rod. The second end of the filament is connected to a second power introduction rod and connected to the acceleration power supply via the second power introduction rod. The first and second ends are arranged between the filament and the filament base. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a substrate heating apparatus that rapidly heats a substrate in a vacuum, a heat treatment method, and a method for manufacturing a semiconductor device using the heat treatment method.

  In semiconductor manufacturing technology, a process of rapidly heating and cooling a semiconductor substrate is often required. In particular, activation annealing of a wide band gap semiconductor typified by silicon carbide (SiC) requires a high temperature of about 2000 ° C.

  Thus, conventionally, an electron impact heating apparatus has been proposed in which thermoelectrons are generated from single-loop or multi-coil filaments disposed in a vacuum container and the thermoelectrons collide to generate heat.

  Usually, in an electron impact heating device, an acceleration voltage is applied between a conductive heater on which a filament and a substrate to be annealed are arranged, thereby accelerating thermoelectrons to generate a high temperature (Patent Documents 1 and 2). And Patent Document 3). FIG. 8 is a perspective view showing the structure of a single loop filament used in a conventional electron impact heating apparatus, and FIG. 9 is a perspective view showing the structure of a multi-coil filament. A filament heating power source is connected to the filament via a power introduction terminal (insulating seal terminal).

Japanese Patent No. 2912613 Japanese Patent No. 2912616 Japanese Patent No. 2912913

  In the conventional electron impact heating apparatus, for example, a graphite vacuum heating vessel has been proposed in which a tungsten filament has a single-loop or multiple-coil structure.

  Conventionally, the power introduction terminal is connected to the tip of the foot where the filament rises. However, when a large-diameter substrate is heated, a large amount of current flows, so the foot part where the filament rises also becomes high temperature, and the temperature of the heater facing this part is locally affected by the emission of thermoelectrons. It might have risen. As a result, the temperature distribution of the processing substrate becomes non-uniform, which may cause various problems. For example, when an activation annealing is performed on a processing substrate into which an impurity has been implanted, the activation rate becomes non-uniform and a pn junction leak may occur in the substrate surface. In addition, since the filament is locally heated, thermal runaway occurs, and control may not be possible in a high temperature region.

  That is, in a conventional apparatus in which electron impact heating is performed with a coiled filament, the temperature of the conductive heater may be partially increased. Therefore, uniform annealing characteristics within the substrate surface may not be obtained.

  A device manufactured from a substrate heated in this way has a large variation in characteristics, which may reduce the yield.

  In addition, when a large-diameter substrate was heated, the amount of current to flow increased, so the temperature of the conductive heater partially increased, and the variation in the in-plane temperature distribution became larger.

  Therefore, the present invention provides an electron impact heating method that makes it possible to improve the temperature distribution on the substrate when heating the substrate so that the emission of thermionic electrons onto the heated substrate surface is uniform. It is an object of the present invention to provide a substrate heating apparatus, a heat treatment method, and a semiconductor device manufacturing method to which the heat treatment method is applied.

A substrate heating apparatus according to the present invention that achieves the above object is a substrate heating apparatus that is disposed to face a substrate held in a container under reduced pressure and has a conductive heater that heats the substrate,
A filament disposed inside the conductive heater and connected to a filament power source to generate thermionic electrons;
An acceleration power source for accelerating the thermoelectrons between the filament and the conductive heater, and the filament is supported on the filament base by a plurality of columns,
A first end of the filament is connected to a first power introduction rod, and is connected to the acceleration power source via the first power introduction rod;
The second end of the filament is connected to a second power introduction rod, and is connected to the acceleration power source via the second power introduction rod.
The first end and the second end are disposed between the filament and the filament base.

  According to the present invention, in the electron impact heating type substrate heating apparatus, the temperature of the conductive heater is not locally increased, and the uniformity of the temperature distribution during heating of the substrate facing the conductive heater is improved.

It is sectional drawing which shows the substrate heating apparatus concerning the 1st Embodiment of this invention. It is sectional drawing which shows the vacuum heating container of the substrate heating apparatus concerning the 1st Embodiment of this invention. It is a perspective view which shows the connection state of the filament of the board | substrate heating apparatus concerning the 1st Embodiment of this invention, and an electric power introduction rod. It is a top view which shows the shape of the filament of the substrate heating apparatus concerning 1st Embodiment. It is a figure which shows the measurement result of the temperature distribution in the surface of a conductive heater at the time of using a conductive heater using the filament of the board | substrate heating apparatus concerning 1st Embodiment. It is a figure which shows the modification of the shape of a filament. It is a figure which shows the modification of the shape of a filament. It is a top view which shows the shape of the filament of the substrate heating apparatus concerning 2nd Embodiment. It is a perspective view which shows the structure of a single loop-shaped filament. It is a perspective view which shows the structure of a multi-coil filament.

  Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the drawings. However, the substrate heating apparatus of the present invention is not limited to individual embodiments.

[First Embodiment]
FIG. 1 is a sectional view showing an electron impact heating type substrate heating apparatus as a first embodiment of the present invention. The substrate heating device is disposed to face a substrate held in a container under reduced pressure, and has a conductive heater that heats the substrate.

  As shown in FIG. 1, the substrate heating apparatus 101 of this embodiment includes a vacuum chamber 102, a vacuum heating vessel 103, a filament power supply 104, a high-voltage DC power supply 105, a substrate 106, a substrate stage 107, and a substrate. And a holding stand 108. The substrate heating apparatus 101 includes a conductive heater 131 that constitutes a part of the heating container, a water cooling channel 109, a water cooling shutter 110, a rotation drive mechanism 190 that drives the water cooling shutter 110, and a substrate holding table 108. , A control unit 1000 that controls the overall operation of the substrate heating apparatus 101, and a lift pin 112. Further, the substrate heating apparatus 101 includes a two-wavelength type radiation thermometer 115, a wavelength detection element a116, an arithmetic circuit 118 that outputs a temperature signal 119, a wavelength detection element b117, a condensing unit 114, and a transmission window 113. And. Further, the substrate heating apparatus 101 includes a filament 132, a reflecting plate 135, an insulator 137, and an intermediate base plate 136. Based on at least one of the output of the detection result of the wavelength detection element a116, the output of the detection result of the wavelength detection element b117, and the calculation result of the arithmetic circuit 118, the control unit 1000 performs the overall operation of the substrate heating apparatus 101. It is possible to control various operations.

  The conductive heater 131 is connected to the upper plate of the vacuum heating container 103. The moving mechanism 111 can move the substrate holding base 108 by raising or lowering. At the position where the substrate holder 108 is raised, the substrate 106 held on the substrate stage 107 on the substrate holder 108 and the conductive heater 131 face each other.

The vacuum chamber 102 can be exhausted to a level of 10 ⁻⁵ Pa by a turbo molecular pump (not shown) (a displacement of 1300 liters / second).

  The conductive heater 131 heats the substrate 106 held by the substrate holder 108 in the vacuum chamber 102.

  The conductive heater 131 is made of, for example, graphite, graphite coated with pyrolytic carbon, pyrolytic carbon, heat-resistant ceramic, or heat-resistant metal.

  The conductive heater 131 coated with pyrolytic carbon incorporates a filament 132 made of tungsten or tungsten / rhenium.

  The filament 132 is connected to the filament power supply 104, which is an AC power supply for heating the filament, by a current introduction terminal via a power introduction rod, and a potential difference is formed between the filament 132 and the conductive heater 131. The filament 132 is connected to a DC power source 105 as an acceleration power source for accelerating thermionic electrons. The current introduction terminal can also partition the vacuum and the atmosphere.

  A two-wavelength type radiation thermometer 115 that functions as temperature measuring means, for example, is incorporated under the substrate holding table 108. In addition to this, for example, a two-wavelength thermography can be used as the temperature measuring means. The temperature of the back surface of the substrate stage 107 of the substrate holder 108 is measured, and the arithmetic circuit 118 controls the temperature signal 119 for controlling the current value applied to the filament 132 so that the temperature of the substrate stage 107 becomes a desired temperature. Is output. Based on the temperature signal 119, the filament power source 104 and the DC power source 105 are controlled via the control unit 1000.

  The substrate stage 107 of this embodiment is made of pyrolytic carbon, for example. When the substrate 106 to be processed is transferred to the substrate stage 107, the control unit 1000 controls the moving mechanism 111 to move the substrate holding table 108 downward. Then, the control unit 1000 controls the rotation drive mechanism 190 to rotate the water-cooled shutter 110. In FIG. 1, the water-cooled shutter 110 is in a retracted state. When the rotation shaft 197 b is rotated by driving the rotation drive mechanism 190, the water-cooled shutter 110 is turned, and the water-cooled shutter 110 that is a thermal partition plate is inserted between the conductive heater 131 and the substrate holder 108. As a result, the conductive heater 131 and the substrate holder 108 are thermally shut off.

  The substrate holding table 108 and the substrate stage 107 have holes through which the lift pins 112 can pass. When the substrate holding table 108 is moved to the lowermost part, the tip of the lift pin 112 protrudes from the substrate stage 107.

  An arm (not shown) enters the vacuum chamber 102 from a transfer chamber (not shown) that is partitioned by a vacuum chamber 102 and a slit valve and is evacuated to a vacuum, and the substrate 106 is placed on lift pins 112 protruding from the substrate stage 107. At least three lift pins 112 are provided, and the substrate 106 is supported by these lift pins 112. Next, after the arm is retracted from the vacuum chamber 102 to the transfer chamber, the slit valve is closed. With the above operation sequence, the loading of the substrate 106 into the vacuum chamber 102 is completed.

  Next, a heat treatment method for the substrate 106 using the substrate heating apparatus 101 (hereinafter, also simply referred to as “treatment method”) will be described. The substrate 106 processing method described below is executed under the overall control of the control unit 1000. First, under the control of the control unit 1000, the substrate holding table 108 moves upward, and the substrate stage 107 of the substrate holding table 108 lifts the substrate 106. The substrate 106 is transferred from the lift pins 112 to the substrate stage 107. The control unit 1000 moves the substrate holding base 108 further and positions it so that the distance between the conductive heater 131 and the substrate 106 is, for example, 5 mm.

  The substrate holding base 108 is connected to the moving mechanism 111 via a support column 195 and a plate 196. Due to the movement of the moving mechanism 111, the plate 196 and the support column 195 move up or down, and the substrate holder 108 moves. The distance between the conductive heater 131 and the substrate 106 can be arbitrarily adjusted by position control of the control unit 1000.

  In order to prevent the outside air from entering the vacuum chamber 102 from the sliding portion where the vacuum chamber 102 and the support column 195 come into contact with each other when the plate 196 and the support column 195 are raised or lowered, and to maintain the vacuum state of the vacuum chamber 102 The substrate heating apparatus 101 includes an expandable / contractible bellows member 197a.

  The wavelength detection element a 116 and the wavelength detection element b 117 can measure the temperature of the substrate stage 107 in a non-contact manner via the support column 195, the transmission window 113, and the condensing unit 114.

  After the substrate holder 108 is positioned, for example, the filament 132 is preheated by raising the alternating current from 0 amperes to 25 amperes by 1 ampere per second and holding it at 25 amperes for 30 seconds.

  Thereafter, in order to emit (generate) thermoelectrons, a voltage is increased from 0 volts to 1500 volts by about 50 volts per second between the filament 132 and the conductive heater 131 by the DC power source 105. Thereafter, the emission current is gradually released and raised to about 1500 volts, and then the alternating current value is raised to about 29 amperes, and at the same time the voltage of the DC power supply 105 is raised to about 2500 volts.

  While the temperature of the substrate stage 107 is monitored by the two-wavelength radiation thermometer 115, the AC current value of the filament power supply 104 is controlled by the arithmetic circuit 118, and the temperature is raised to the set temperature of 1900 ° C. in about 3 minutes. Hold heated for 1 minute. After heating and holding for about 1 minute, the filament power source 104 and the DC power source 105 are turned off.

  The temperature of the conductive heater 131 rapidly decreases due to radiation. For example, when the temperature of the substrate stage 107 reaches 1200 ° C. (first detection temperature) in about 1 minute, the substrate stage 107 is lowered. The water cooling shutter 110 which is a thermal partition plate is inserted between the conductive heater 131 and the substrate stage 107 at a distance of 50 mm from the conductive heater 131, and the substrate 106 is rapidly cooled.

  After about 2 minutes, when the temperature of the substrate stage 107 becomes, for example, 700 ° C. or less (second detection temperature), the substrate holding base 108 is further lowered, the substrate 106 is replaced with the lift pins 112, and the slit valve is opened. It is done.

  Then, an arm (not shown) enters the vacuum chamber 102 from a transfer chamber (not shown) that is evacuated to a vacuum partitioned from the vacuum chamber 102 and a slit valve, and the heated substrate 106 is recovered from the lift pins 112, It is transferred to a load lock chamber (not shown).

  When the temperature of the heat-treated substrate 106 becomes 150 ° C. or lower (third detection temperature), a load lock chamber (not shown) is vented to the atmosphere, and the substrate 106 is taken out.

  In general, since silicon carbide (SiC) has multiple crystal types of 3C, 4H, and 6H, the crystal is off by 4 degrees or 8 degrees with respect to the C-axis plane in order to perform homoepitaxial growth with uniform crystallinity. A silicon carbide (SiC) substrate is used.

  In addition, a substrate made of a single crystal semiconductor such as silicon or a substrate made of a compound semiconductor made of gallium nitride or the like can be used.

  Here, the substrate heat treatment method includes a heating step of heating the substrate using the substrate heating apparatus of the present embodiment. In addition, a method for manufacturing a semiconductor device including a single crystal semiconductor or a compound semiconductor includes a heating step of heating the substrate using a heat treatment method.

  FIG. 2 is an enlarged cross-sectional view of the vacuum heating container 103 in the substrate heating apparatus as the first embodiment of the present invention.

  The vacuum heating container 103 includes an intermediate base plate 136, a reflection plate 135, a filament support 142, a filament 132, and a conductive heater 131. The conductive heater 131 includes a side surface portion and a circular bottom surface portion. The filament 132 is supported by filament struts 142 that are a plurality of supports connected to the filament base 139. It is preferable that an insulator is provided at a connection portion between the filament base and the filament support 142. Electric power is supplied to the filament 132 from the filament power supply 104 via the power introduction terminal 140 and the power introduction rod 138. The filament 132 has a first end a connected to the first power introduction rod 138a and a second end b connected to the second power introduction rod 138b (FIG. 3). The first end a and the second end b are disposed so as to be positioned between the filament base 139 and the filament 132 for holding the plurality of filament struts 142, respectively. The filament 132 is bent before the first end portion a and the second end portion b, and is disposed substantially parallel to the bottom surface portion of the conductive heater.

  In the present embodiment, the intermediate base plate 136 is made of, for example, molybdenum. The filament support 142 and the power introduction rod 138 are made of, for example, tantalum. The filament 132 is made of, for example, tungsten / rhenium. Further, the conductive heater 131 is made of graphite coated with pyrolytic carbon, for example. Note that the gist of the present invention is not limited to this example, and the vacuum heating vessel 103 can be configured by members having similar material characteristics.

  An intermediate base plate 136 is fixed to the water-cooled lid (plate) of the vacuum heating container 103 of the substrate heating apparatus 101 with four columns inside the conductive heater 131 coated with pyrolytic carbon.

  A plurality of reflecting plates 135 are fixed to the intermediate base plate 136. A filament base 139 for supporting the filament is provided below the reflecting plate 135. The filament 132 is supported by a plurality of filament struts 142 connected to the filament base 139. The reflector 135 and the filament base 139 are made of, for example, C / C composite carbon. The reflector may be made of molybdenum, tantalum carbide (TaC), or the like. The conductive heater 131 is preferably set to the ground potential. Therefore, the shortest distance between the filament 132 or the reflecting plate 135 and the conductive heater 131 is preferably 5 mm or more and 15 mm or less. If it is less than 5 mm, abnormal electric discharge may occur when an electric field is applied. If it exceeds 15 mm, electrons may disappear in the middle and thermal efficiency may deteriorate.

  FIG. 3 is a schematic diagram showing a state in which the filament 132 is connected to the power introduction rod 138. Since the power introduction rod 138 for introducing current into the filament is located near the first end a and the second end b where the filament rises, the first rise where the filament rises even when a large amount of current flows. It is possible to prevent the end portion a and the second end portion b from becoming hot. The filament used in the present invention is concentric with the inner circumferential portion formed at a predetermined interval along the inner circumferential circle concentric with the bottom surface portion of the conductive heater, and is concentric with the inner circumferential circle. It is preferable to have an outer peripheral portion formed at a predetermined interval on the circumference of an outer peripheral circle having a large diameter, and a region formed by connecting an end point of the inner peripheral portion and an end point of the outer peripheral portion.

  FIG. 4 is a plan view showing the shape of the filament 132 in the substrate heating apparatus 101 as the first embodiment of the present invention. It is assumed that both ends (not shown) of the filament 132 are connected to the filament power source 104.

  As shown in FIG. 4, the intersection point between the central axis of the bottom surface of the conductive heater and the center of the filament 132 is defined as a center O. The filament 132 is oriented in the radial direction between the inner peripheral portion 301 and the outer peripheral portion 303 that are stretched in the circumferential direction of concentric circles (the inner peripheral circle 300 and the outer peripheral circle 302), and between the inner peripheral circle 300 and the outer peripheral circle 302. Radiating portions 304a and 304b. By connecting the respective parts in the order of the inner peripheral part 301, the radius part 304a, the outer peripheral part 303, the radius part 304b, and the inner peripheral part 301, one filament 132 is formed. When a single substrate is used as the substrate, it is preferable that the central axis of the bottom surface portion of the conductive heater and the central axis of the substrate coincide.

  That is, the filament 132 of the present embodiment has a predetermined interval (for example, along the inner circumference circle 300 (the arc of the inner circumference circle 300) concentric with the bottom surface portion of the conductive heater 131 with “O” as the center. It has an inner periphery 301 formed by θ1). The filament 132 is concentric with the inner circumferential circle 300 and has two end points (P1, P1) arranged at a predetermined interval (for example, L1) on the circumference of the outer circumferential circle 302 having a diameter larger than that of the inner circumferential circle 300. P2) has an outer periphery 303 formed by connecting. The angle interval of the outer peripheral portion 303 is determined by θ2, and the arrangement interval of the end points of the outer peripheral portion 303 is determined by L1. Further, the filament 132 has radius portions 304 a and 304 b formed by connecting the end point of the inner peripheral portion 301 and one end point of the outer peripheral portion 303. One end point (for example, P2) of the two end points (P1, P2) is connected to the end point (P3 in FIG. 4) of the inner peripheral portion disposed most recently. Thereby, the structure corresponding to the radius part 304b is obtained. The radius portions 304 a and 304 b and the outer peripheral portion 303 form a protruding region that protrudes from the inner peripheral portion 301.

  In the present embodiment, the diameter d1 of the inner circumference circle 300 (inner circumference portion 301) and the diameter d2 of the outer circumference circle 302 are, for example, d1 = 90 mm and d2 = 150 mm. The gist of the present invention is not limited to this numerical example, and the diameters of the inner circumference circle 300 and the outer circumference circle 302 are changed at the same ratio according to the size of the substrate 106 to be heat-treated. Thus, the same effect can be obtained. The concentric circles are not limited to two.

  The filament 132 is connected to a current introduction rod made of tantalum, and the reflection plate 135 is configured to have the same potential as the filament 132 in order to efficiently reflect the emitted thermoelectrons.

  In the conventional triple-coiled filament structure (for example, FIG. 9), many electrons collide with the central portion of the heating surface of the conductive heater 131 facing the substrate 106, but in the filament 132 of this embodiment, The amount of electron collision at the side surface of the heating surface of the conductive heater 131 increased.

  In the conventional triple-coiled filament, many electrons collide with the heating part for the following reasons. The triple-coiled filament positively collides thermoelectrons with the side surface of the conductive heater to raise its temperature, and uses heat conduction from the side surface of the conductive heater to The purpose was to uniformly heat the plate.

  However, the thermoelectrons emitted from the filament do not have directionality when emitted from the filament, and are emitted in all directions around the filament. For this reason, the thermoelectrons are not only incident on the side surface of the conductive heater to be actively heated, but also emitted toward the center of the filament and the lower part. As a result, the thermoelectrons emitted toward the center of the filament and in the lower direction are focused on the central portion of the conductive heater by the reflector provided below the filament, resulting in a decrease in thermal uniformity. Become.

  FIG. 5 shows the result of measuring the in-plane temperature distribution of the conductive heater 131 using the filament 132 in the substrate heating apparatus 101 according to the first embodiment of the present invention (solid line). ). As the conductive heater 131, a pyrolytic carbon coating having a diameter of 200 mm is used. In FIG. 5, for comparison, the in-plane temperature of the conductive heater in the substrate heating apparatus having the same configuration as that of the substrate heating apparatus of the first embodiment in the case where the end portions a and b of the filament 132 are arranged above the reflecting plate. Distribution measurement results are shown by dotted lines.

  As shown in FIG. 5, in the comparative example (dotted line), the temperature difference between the maximum and minimum heater temperatures is about 300 ° C., whereas in the first embodiment of the present invention, the temperature difference is Was about 150 ° C., and it was confirmed by experiments that the uniformity of the temperature distribution was improved.

  6A and 6B are diagrams showing a modification of the filament 132. FIG. It is assumed that both end portions (not shown in FIGS. 6A and 6B) of the filament 132 are connected to the filament power source 104 via a power introduction rod and a power introduction terminal. The intersection point between the central axis of the bottom surface portion of the conductive heater 131 and the center of the filament 132 is defined as a center O. As shown in FIG. 6A, the filament 132 is wired on a plane parallel to the substrate 106 by combining each of the direction away from the intersection point O, the direction approaching the intersection point O, and the direction equidistant from the intersection point O. .

  That is, the filament 132 has an inner peripheral portion 501 formed at a predetermined interval (for example, θ1) along an inner peripheral circle 500 concentric with the bottom surface portion of the conductive heater 131 centered on “O”. Have. The filament 132 is concentric with the inner circumferential circle 500 and is formed from one end point P4 arranged at a predetermined interval (for example, θ2) on the circumference of the outer circumferential circle 502 having a diameter larger than that of the inner circumferential circle 500. The outer peripheral portion 503 is provided. The filament 132 includes regions 504a and 504b formed by connecting the end point of the inner peripheral portion 501 and the end point P4 of the outer peripheral portion 503. One end point P4 is connected to the end point of the inner peripheral portion 501 that is disposed most recently. For example, in FIG. 6A, when θ4 = θ5, P5 and P6 are obtained as the end points of the inner peripheral portion arranged nearest to the end point P4, and P4 is connected to P5 and P6 to thereby The configuration of the filament 132 corresponding to the regions 504a and 504b is obtained. The regions 504a and 504b and the outer peripheral portion 503 form a protruding region protruding from the inner peripheral portion 501.

  In FIG. 6B, among the direction away from the intersection point O shown in FIG. 6A, the direction approaching the intersection point O, and the direction equidistant from the intersection point O, the wiring that is equidistant from the intersection point is deleted, and A configuration example of the filament 132 is shown by combining the directions approaching.

  That is, the filament 132 has an inner circumferential circle dividing point that divides the circumference of the inner circumferential circle 500 concentric with the bottom surface portion of the conductive heater 131 around “O” into predetermined intervals (for example, θ3), The outer circumferential circle division point that is concentric with the circumferential circle 500 and divides the circumference of the outer circumferential circle 502 having a larger diameter than the inner circumferential circle 500 into a predetermined interval (for example, θ3) is arranged closest. It is formed by connecting the inner circumferential circle dividing point and the outer circumferential circle dividing point.

(Second Embodiment)
In the first embodiment, the configuration in which there is one filament 132 has been described. However, a configuration in which a plurality of filaments 132 having the same configuration are provided in an overlapped manner may be used.

  Further, as shown in FIG. 7, a second filament 701 having a shape different from that of the first filament 132 may be provided outside the first filament 132. In this case, an independent AC heating power source 705 is connected to each filament, and each of the first filament 132 and the second filament 701 is connected to the same DC acceleration power source 703 through a Loperth filter 702. It is preferable to have a structured. This is because, since there is one power source, the acceleration voltage values are the same, and the flow of electrons into the heater can be controlled. A plurality of radiation thermometers 707 are provided above the substrate stage 107, and the output of the AC heating power source 705 can be controlled by the arithmetic circuit 706 based on the temperature measurement result of the radiation thermometer 707.

  According to the first and second embodiments of the present invention, in the electron impact heating type substrate heating apparatus, the temperature of the conductive heater does not rise locally, and the substrate facing the conductive heater is heated. The uniformity of temperature distribution can be improved.

  When the substrate into which the impurity was implanted was annealed using the substrate processing apparatus according to the first and second embodiments of the present invention, the activation rate could be made uniform.

  The present invention is applicable to a substrate heating apparatus and a processing method for heating a substrate made of silicon carbide (SiC) or the like, and is suitable for manufacturing a semiconductor device.

DESCRIPTION OF SYMBOLS 101 Substrate heating apparatus 102 Vacuum chamber 103 Vacuum heating container 104 Filament power supply 105 DC power supply 106 Substrate 107 Substrate stage 108 Substrate holder 109 Water cooling passage 110 Water cooling shutter 111 Moving mechanism 112 Lift pin 113 Transmission window 114 Condensing part 115 Two wavelength type Radiation thermometer 116 Wavelength detection element a
117 Wavelength detection element b
118 Arithmetic Circuit 119 Temperature Signal 131 Conductive Heater 132 Filament 135 Reflector Plate 136 Intermediate Base Plate 137 Insulator 142 Filament Strut

Claims (7)

A substrate heating device that is disposed opposite to a substrate held in a container under reduced pressure and has a conductive heater for heating the substrate,
A filament disposed inside the conductive heater and connected to a filament power source to generate thermionic electrons;
An acceleration power source for accelerating the thermoelectrons between the filament and the conductive heater, and the filament is supported on the filament base by a plurality of columns,
A first end of the filament is connected to a first power introduction rod, and is connected to the acceleration power source via the first power introduction rod;
The second end of the filament is connected to a second power introduction rod, and is connected to the acceleration power source via the second power introduction rod.
The substrate heating apparatus, wherein the first end portion and the second end portion are disposed between the filament and the filament base.   The filament has an inner circumferential portion formed at a predetermined interval along an inner circumferential circle concentric with the bottom surface portion of the conductive heater, and a diameter that is concentric with the inner circumferential circle and larger than the inner circumferential circle. And an area formed by connecting an end point of the inner peripheral part and an end point of the outer peripheral part. Item 2. The substrate heating apparatus according to Item 1. The outer peripheral portion is formed by connecting two end points arranged at a predetermined interval on the circumference of the outer peripheral circle,
3. The substrate heating apparatus according to claim 2, wherein one end point of the two end points is connected to an end point of the inner peripheral portion disposed closest to the end point.   The filament is concentric with the inner circumferential circle, and is larger than the inner circumferential circle, and an inner circumferential circle dividing point that divides the circumference of the inner circumferential circle concentric with the bottom surface portion of the conductive heater into a predetermined interval. Of the outer circumference circle dividing points that divide the circumference of the outer circumference circle having a diameter into the predetermined intervals, the inner circumference circle division points and the outer circumference circle division points that are arranged closest to each other are connected to each other. The substrate heating apparatus according to claim 1.   The substrate heating apparatus according to claim 1, wherein the filament includes a first filament and a second filament having different shapes. A method for heat-treating a substrate,
A heat treatment method comprising a heating step of heating the substrate using the substrate heating apparatus according to claim 1. A method for producing a semiconductor device comprising a single crystal semiconductor or a compound semiconductor,
A method for manufacturing a semiconductor device, comprising a heating step of heating a substrate using the heat treatment method according to claim 6.

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