JP2011024642A5 - Semiconductor power converter, X-ray CT apparatus using the same, and X-ray diagnostic apparatus - Google Patents
Semiconductor power converter, X-ray CT apparatus using the same, and X-ray diagnostic apparatus Download PDFInfo
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- JP2011024642A5 JP2011024642A5 JP2009170676A JP2009170676A JP2011024642A5 JP 2011024642 A5 JP2011024642 A5 JP 2011024642A5 JP 2009170676 A JP2009170676 A JP 2009170676A JP 2009170676 A JP2009170676 A JP 2009170676A JP 2011024642 A5 JP2011024642 A5 JP 2011024642A5
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上記目的を達成するために、本発明は、複数の半導体素子を有する半導体電力変換回路と、前記半導体電力変換回路に付随し前記半導体電力変換回路を放熱する放熱構造体と、前記放熱構造体を冷却する2つ以上の冷却装置と、前記冷却装置の異常を監視する冷却装置監視回路と、前記冷却装置の数よりも少ない数であって前記放熱構造体に設置される温度センサと、前記温度センサにより前記放熱構造体の表面温度を検出する温度監視回路と、検出された前記表面温度と温度閾値との比較に基づいて前記半導体電力変換回路の動作を停止するか否かを制御する電力変換制御回路と、を備える半導体電力変換装置において、前記電力変換制御回路は、前記温度閾値を複数有しており、前記冷却装置監視回路から送られる前記冷却装置の動作状態に応じて、前記温度閾値を変更する。
In order to achieve the above object, the present invention provides a semiconductor power conversion circuit having a plurality of semiconductor elements, a heat dissipation structure for radiating the semiconductor power conversion circuit accompanying the semiconductor power conversion circuit, and the heat dissipation structure. Two or more cooling devices for cooling, a cooling device monitoring circuit for monitoring an abnormality of the cooling device, a temperature sensor whose number is smaller than the number of the cooling devices and installed in the heat dissipation structure, the temperature Power conversion to control whether or not to stop the operation of the semiconductor power conversion circuit based on the temperature monitoring circuit that detects the surface temperature of the heat dissipation structure by a sensor, and the comparison between the detected surface temperature and the temperature threshold And a control circuit, wherein the power conversion control circuit has a plurality of the temperature thresholds, and the operating state of the cooling device sent from the cooling device monitoring circuit. The temperature threshold is changed according to .
Claims (7)
前記電力変換制御回路は、前記温度閾値を複数有しており、
前記冷却装置監視回路から送られる前記冷却装置の動作状態に応じて、前記温度閾値を変更することを特徴とする半導体電力変換装置。 A semiconductor power conversion circuit having a plurality of semiconductor elements, a heat dissipation structure attached to the semiconductor power conversion circuit for radiating the semiconductor power conversion circuit, two or more cooling devices for cooling the heat dissipation structure, and the cooling A surface temperature of the heat dissipating structure is detected by a cooling device monitoring circuit that monitors an abnormality of the device, a temperature sensor whose number is smaller than the number of the cooling devices and installed in the heat dissipating structure, and the temperature sensor A semiconductor power conversion device comprising: a temperature monitoring circuit; and a power conversion control circuit that controls whether to stop the operation of the semiconductor power conversion circuit based on a comparison between the detected surface temperature and a temperature threshold value .
The power conversion control circuit has a plurality of the temperature thresholds,
The semiconductor power conversion device , wherein the temperature threshold value is changed according to the operating state of the cooling device sent from the cooling device monitoring circuit .
前記電力変換制御回路は、前記冷却装置に異常がないときの前記温度閾値である第一温度閾値と、第一温度閾値より低い第二温度閾値とを有しており、The power conversion control circuit has a first temperature threshold that is the temperature threshold when there is no abnormality in the cooling device, and a second temperature threshold that is lower than the first temperature threshold.
前記冷却装置監視回路が前記冷却装置の異常を検出したときに、前記温度閾値を第一温度閾値から第二温度閾値へ変更することを特徴とする半導体電力変換装置。A semiconductor power conversion device, wherein the temperature threshold is changed from a first temperature threshold to a second temperature threshold when the cooling device monitoring circuit detects an abnormality of the cooling device.
前記冷却装置監視回路により前記冷却装置の異常を検出した数に応じて、前記温度閾値を変更することを特徴とする半導体電力変換装置。 The semiconductor power conversion device according to claim 1 or 2
The semiconductor power conversion device according to claim 1, wherein the temperature threshold is changed according to the number of abnormalities of the cooling device detected by the cooling device monitoring circuit.
前記冷却装置監視回路により異常を検出した前記冷却装置の配置位置と前記温度センサとの距離に応じて、前記温度閾値を変更することを特徴とする半導体電力変換装置。 The semiconductor power conversion device according to claim 1 or 2
The semiconductor power conversion device according to claim 1, wherein the temperature threshold value is changed according to a distance between an arrangement position of the cooling device whose abnormality is detected by the cooling device monitoring circuit and the temperature sensor.
前記温度センサは、前記冷却装置の異常がないときに前記放熱構造体の表面温度が最も高温となる位置に設置されることを特徴とする半導体電力変換装置。 The semiconductor power conversion device according to any one of claims 1 to 4.
The semiconductor power conversion device according to claim 1, wherein the temperature sensor is installed at a position where the surface temperature of the heat dissipation structure is the highest when there is no abnormality in the cooling device.
前記Ｘ線管へ電力を供給する装置が、請求項1乃至５のいずれか一項に記載の半導体電力変換装置を備えることを特徴とするＸ線ＣＴ装置。 An X-ray tube for irradiating an X-ray to an object, an X-ray detector disposed opposite to the X-ray tube for detecting an X-ray transmitted through the object, X-rays detected by the X-ray detector are collected as digital data X-ray CT apparatus having a data acquisition device, an image processing device for performing CT image reconstruction by processing measurement data sent from the data acquisition device, and an input device for inputting information of an object And
An X-ray CT apparatus characterized in that the apparatus for supplying power to the X-ray tube comprises the semiconductor power conversion apparatus according to any one of claims 1 to 5 .
前記Ｘ線管へ電力を供給する装置が、請求項1乃至５のいずれか一項に記載の半導体電力変換装置を備えることを特徴とするＸ線診断装置。 An X-ray tube for irradiating an X-ray to an object, an X-ray detector disposed opposite to the X-ray tube to detect X-rays transmitted through the object, X-ray image of X-rays detected by the X-ray detector An X-ray diagnostic apparatus comprising: a display unit for displaying
An apparatus for supplying power to the X-ray tube comprises the semiconductor power conversion apparatus according to any one of claims 1 to 5 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009170676A JP5436081B2 (en) | 2009-07-22 | 2009-07-22 | Semiconductor power converter, X-ray CT apparatus and X-ray diagnostic apparatus using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| JP2009170676A JP5436081B2 (en) | 2009-07-22 | 2009-07-22 | Semiconductor power converter, X-ray CT apparatus and X-ray diagnostic apparatus using the same |
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| Publication Number | Publication Date |
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| JP2011024642A JP2011024642A (en) | 2011-02-10 |
| JP2011024642A5 true JP2011024642A5 (en) | 2012-08-30 |
| JP5436081B2 JP5436081B2 (en) | 2014-03-05 |
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| JP2009170676A Active JP5436081B2 (en) | 2009-07-22 | 2009-07-22 | Semiconductor power converter, X-ray CT apparatus and X-ray diagnostic apparatus using the same |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5577220B2 (en) * | 2010-11-02 | 2014-08-20 | 株式会社ダイヘン | Protective device for welding power supply |
| US20130343105A1 (en) * | 2011-03-16 | 2013-12-26 | Toyota Jidosha Kabushiki Kaisha | Inverter overheating protection control apparatus and inverter overheating protection control method |
| JP5972554B2 (en) * | 2011-11-15 | 2016-08-17 | 東芝メディカルシステムズ株式会社 | Nuclear medicine diagnostic equipment |
| JP5897381B2 (en) * | 2012-04-02 | 2016-03-30 | 株式会社ダイヘン | Power supply device and power supply device for welding |
| CN103618435B (en) * | 2013-11-20 | 2016-03-02 | 国电南京自动化股份有限公司 | A kind of thermal management circuit based on high-power converter and method thereof |
| JP7302432B2 (en) | 2019-10-25 | 2023-07-04 | 株式会社デンソー | Semiconductor device control device |
| DE102022202726B4 (en) * | 2022-03-21 | 2024-02-15 | Siemens Healthcare Gmbh | X-ray high voltage generator with a two-phase cooling system |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4472821B2 (en) * | 2000-01-31 | 2010-06-02 | Ｇｅヘルスケア・ジャパン株式会社 | X-ray CT system |
| JP4467507B2 (en) * | 2005-11-25 | 2010-05-26 | 株式会社日立産機システム | Screw compressor |
| JP5028939B2 (en) * | 2006-10-10 | 2012-09-19 | オムロン株式会社 | Abnormality detection device, abnormality detection method, temperature controller and heat treatment device |
| JP2008172938A (en) * | 2007-01-12 | 2008-07-24 | Meidensha Corp | Abnormality diagnosing equipment for cooler |
| JP2010161890A (en) * | 2009-01-09 | 2010-07-22 | Seiko Epson Corp | Power supply device, electrical apparatus and method for controlling the power supply device |
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