JP2011009293A - ワイドギャップ酸化物半導体及びそれを用いた紫外線センサ - Google Patents
ワイドギャップ酸化物半導体及びそれを用いた紫外線センサ Download PDFInfo
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- JP2011009293A JP2011009293A JP2009148941A JP2009148941A JP2011009293A JP 2011009293 A JP2011009293 A JP 2011009293A JP 2009148941 A JP2009148941 A JP 2009148941A JP 2009148941 A JP2009148941 A JP 2009148941A JP 2011009293 A JP2011009293 A JP 2011009293A
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Abstract
【解決手段】本発明のワイドギャップ酸化物半導体及びそれを用いた紫外線センサは、光吸収層を酸化亜鉛に酸化アルミニウムを添加することにより、禁制帯幅を3.6eV以上となる構成となっているので、可視光やUV−Aの紫外線などの長波長の光を吸収せず、UV−BやUV−Cの紫外線のみに感度をもつ紫外線センサを安価に得ることができる。
【選択図】図1
Description
2 基板
3 感応膜
4,41 電極材料
5 レジスト膜
Claims (4)
- 酸化亜鉛に酸化アルミニウムを添加することにより、禁制帯幅を3.6eV以上としたことを特徴とするワイドギャップ酸化物半導体。
- 前記酸化亜鉛と酸化アルミニウムの混合材料において、亜鉛に対してアルミニウムの混合比率が20at%以上であることを特徴とする請求項1記載のワイドギャップ酸化物半導体。
- 請求項1又は請求項2に記載のワイドギャップ酸化物半導体から成る層を受光層として、前記ワイドギャップ酸化物半導体の光導電効果を利用したことを特徴とする紫外線センサ。
- 前記ワイドギャップ酸化物半導体の前記酸化亜鉛と酸化アルミニウムの混合材料において、亜鉛に対してアルミニウムの混合比率が40at%以上であり、UV−C(280nm以下の波長)の紫外線のみに感度を持つことを特徴とする請求項3に記載の紫外線センサ。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11049993B1 (en) | 2019-12-26 | 2021-06-29 | National Chung-Shan Institute Of Science And Technology | Method for preparing aluminum nitride-zinc oxide ultraviolet detecting electrode |
JP2021103755A (ja) * | 2019-12-26 | 2021-07-15 | 國家中山科學研究院 | 窒化アルミニウム‐酸化亜鉛の紫外線検出電極を作製する方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000159547A (ja) * | 1998-11-20 | 2000-06-13 | Central Glass Co Ltd | 低反射熱線遮蔽ガラス |
JP2007027744A (ja) * | 2005-07-15 | 2007-02-01 | General Electric Co <Ge> | 光検出システム及びモジュール |
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- 2009-06-23 JP JP2009148941A patent/JP2011009293A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000159547A (ja) * | 1998-11-20 | 2000-06-13 | Central Glass Co Ltd | 低反射熱線遮蔽ガラス |
JP2007027744A (ja) * | 2005-07-15 | 2007-02-01 | General Electric Co <Ge> | 光検出システム及びモジュール |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11049993B1 (en) | 2019-12-26 | 2021-06-29 | National Chung-Shan Institute Of Science And Technology | Method for preparing aluminum nitride-zinc oxide ultraviolet detecting electrode |
JP2021103755A (ja) * | 2019-12-26 | 2021-07-15 | 國家中山科學研究院 | 窒化アルミニウム‐酸化亜鉛の紫外線検出電極を作製する方法 |
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