JP2011004166A - Solid-state imaging apparatus - Google Patents

Solid-state imaging apparatus Download PDF

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JP2011004166A
JP2011004166A JP2009145611A JP2009145611A JP2011004166A JP 2011004166 A JP2011004166 A JP 2011004166A JP 2009145611 A JP2009145611 A JP 2009145611A JP 2009145611 A JP2009145611 A JP 2009145611A JP 2011004166 A JP2011004166 A JP 2011004166A
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solid
state imaging
imaging device
plate
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Naoki Okochi
直紀 大河内
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Nikon Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Abstract

PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus easily preventing the electrostatic charge on the solid-state imaging element side of a translucent planar member before assembly, and reducing the sticking of dust to the solid-state imaging element side of the translucent planar member in the assembly process of the solid-state imaging apparatus.SOLUTION: The solid-state imaging apparatus 1 is equipped with: a solid-state imaging element 2; a package body 3 in a recessed shape having an opening 3a and housing the solid-state imaging element 2; and a planar member 4 disposed on the light incidence side of the solid-state imaging element 2. The opening 3a of the package body 3 is sealed with the planar member 4. The planar member 4 comprises a material having resistivity (resistivity at room temperature) ≤10Ωcm and translucency.

Description

本発明は、固体撮像装置に関するものである。   The present invention relates to a solid-state imaging device.

従来から、固体撮像素子と、その光入射側に配置されたガラス板（透光性板状部材に相当）と、開口を有し前記固体撮像素子を収容した凹形状のパッケージ本体とを備え、前記開口が前記ガラス板で封止された固体撮像装置が、提供されている（例えば、下記特許文献１，２）。   Conventionally, comprising a solid-state imaging device, a glass plate (corresponding to a translucent plate-like member) disposed on the light incident side, and a concave package body having an opening and containing the solid-state imaging device, A solid-state imaging device in which the opening is sealed with the glass plate is provided (for example, Patent Documents 1 and 2 below).

このような固体撮像装置では、固体撮像素子の画素数が年々増加する傾向にあり、画素サイズを小さくすることが要求されている。画素サイズが小さくなると、それに伴って、前記ガラス板に付着することが許容されるゴミの規格も厳しくなる。   In such a solid-state imaging device, the number of pixels of the solid-state imaging device tends to increase year by year, and it is required to reduce the pixel size. As the pixel size becomes smaller, the standard of dust allowed to adhere to the glass plate becomes stricter accordingly.

そこで、静電気によりガラス板に対してゴミが付着するのを防止しようとする固体撮像装置として、以下の固体撮像装置が提案されている。   Thus, the following solid-state imaging device has been proposed as a solid-state imaging device that attempts to prevent dust from adhering to the glass plate due to static electricity.

特許文献１の第３図には、前述したような固体撮像装置において、前記ガラス板の外側面（固体撮像素子とは反対側の面）及び内側面（固体撮像素子側の面）に帯電防止膜が形成された固体撮像装置が、開示されている。   In FIG. 3 of Patent Document 1, in the solid-state imaging device as described above, the outer surface (surface opposite to the solid-state imaging device) and the inner surface (surface on the solid-state imaging device side) of the glass plate are prevented from being charged. A solid-state imaging device having a film formed thereon is disclosed.

また、特許文献２の第１図には、前述したような固体撮像装置において、前記ガラス板の外側面に、帯電防止手段として透明導電性膜が形成され、この透明導電性膜が筐体に接続された固体撮像装置が、開示されている。   Further, in FIG. 1 of Patent Document 2, in the solid-state imaging device as described above, a transparent conductive film is formed on the outer surface of the glass plate as an antistatic means, and this transparent conductive film is formed on the casing. A connected solid-state imaging device is disclosed.

さらに、特許文献２の第２図には、前述したような固体撮像装置において、前記ガラス板の内側面に、帯電防止手段として、固体撮像素子の周辺を囲むように額縁状をなす導電フィルムが設けられ、この導電フィルムが白金線により筐体に接続された固体撮像装置が、開示されている。   Furthermore, in FIG. 2 of Patent Document 2, in the solid-state imaging device as described above, a conductive film having a frame shape is formed on the inner surface of the glass plate as an antistatic means so as to surround the periphery of the solid-state imaging device. There is disclosed a solid-state imaging device that is provided and the conductive film is connected to a casing by a platinum wire.

特開昭６０−２３６３７４号公報JP-A-60-236374 特開平２−１６９９号公報JP-A-2-1699

しかしながら、前述した従来の各固体撮像装置では、固体撮像装置の組み立て工程（固体撮像素子の実装工程）において、組み立て前のガラス板の固体撮像素子側の帯電を容易に防止することはできず、ガラス板の固体撮像素子側へのゴミの付着を必ずしも十分に低減することができない。したがって、ガラス板の固体撮像素子側にゴミが付着したままで、固体撮像素子を封止してしまうことがある。その場合には、その封止を一旦解除するリキャップ等の修理工程を通さない限り、そのゴミを除去することができず、その固体撮像装置は不良品になってしまう。このため、前述した従来の各固体撮像装置では、歩留りの低下又は工程の直行率の低下を招いてしまう。   However, in each of the conventional solid-state imaging devices described above, in the assembly process (solid-state imaging device mounting process) of the solid-state imaging device, charging on the solid-state imaging device side of the glass plate before assembly cannot be easily prevented, Adhesion of dust to the solid-state image sensor side of the glass plate cannot always be sufficiently reduced. Therefore, the solid-state image sensor may be sealed with dust attached to the glass plate on the solid-state image sensor side. In that case, the dust cannot be removed unless a repair process such as recapping for releasing the sealing is performed, and the solid-state imaging device becomes defective. For this reason, in each of the conventional solid-state imaging devices described above, the yield decreases or the direct rate of the process decreases.

本発明は、このような事情に鑑みてなされたもので、固体撮像装置の組み立て工程において、組み立て前の透光性板状部材の固体撮像素子側の帯電を容易に防止することができ、透光性板状部材の固体撮像素子側へのゴミの付着をより低減することができる固体撮像装置を提供することを目的とする。   The present invention has been made in view of such circumstances, and in the assembly process of the solid-state imaging device, charging of the translucent plate-shaped member before assembly on the solid-state imaging element side can be easily prevented. It is an object of the present invention to provide a solid-state imaging device that can further reduce the adhesion of dust to the solid-state imaging element side of the optical plate-like member.

前記課題を解決するための手段として、以下の各態様を提示する。第１の態様による固体撮像装置は、固体撮像素子と、前記固体撮像素子の光入射側に配置され１０１２Ω・ｃｍ以下の抵抗率及び透光性を有する材料からなる板状部材と、を備えたものである。前記板状部材の抵抗率は、１０８Ω・ｃｍ以下であることがより好ましく、１０６Ω・ｃｍ以下であることがより一層好ましい。 The following aspects are presented as means for solving the problems. A solid-state imaging device according to a first aspect includes: a solid-state imaging device; and a plate-like member made of a material that is disposed on a light incident side of the solid-state imaging device and has a resistivity of 10 12 Ω · cm or less and translucency. It is provided. The resistivity of the plate-like member is more preferably 10 8 Ω · cm or less, and still more preferably 10 6 Ω · cm or less.

第２の態様による固体撮像装置は、前記第１の態様において、前記板状部材の表面又は裏面の少なくとも一部の領域に、帯電防止膜が形成されたものである。   In the solid-state imaging device according to the second aspect, in the first aspect, an antistatic film is formed on at least a partial region of the front surface or the back surface of the plate-like member.

第３の態様による固体撮像装置は、前記第２の態様において、前記帯電防止膜が導電膜であるものである。   In the solid-state imaging device according to the third aspect, in the second aspect, the antistatic film is a conductive film.

第４の態様による固体撮像装置は、前記第１乃至第４の態様において、開口を有し前記固体撮像素子を収容した凹形状のパッケージ本体を備え、前記開口が前記板状部材で封止されたものである。   A solid-state imaging device according to a fourth aspect includes a concave package body having an opening and accommodating the solid-state imaging element in the first to fourth aspects, and the opening is sealed with the plate-like member. It is a thing.

第５の態様による固体撮像装置は、前記パッケージ本体に導電部が設けられ、前記導電部が前記板状部材と電気的に接続されたものである。   In the solid-state imaging device according to the fifth aspect, a conductive portion is provided in the package body, and the conductive portion is electrically connected to the plate-like member.

本発明によれば、固体撮像装置の組み立て工程において、組み立て前の透光性板状部材の固体撮像素子側の帯電を容易に防止することができ、透光性板状部材の固体撮像素子側へのゴミの付着をより低減することができる固体撮像装置を提供することができる。   According to the present invention, in the assembly process of the solid-state imaging device, charging of the translucent plate-shaped member before assembly on the solid-state imaging element side can be easily prevented, and the translucent plate-shaped member on the solid-state imaging element side It is possible to provide a solid-state imaging device that can further reduce the adhesion of dust to the surface.

本発明の第１の実施の形態による固体撮像装置を示す概略断面図である。1 is a schematic cross-sectional view showing a solid-state imaging device according to a first embodiment of the present invention. 本発明の第２の実施の形態による固体撮像装置を示す概略断面図である。It is a schematic sectional drawing which shows the solid-state imaging device by the 2nd Embodiment of this invention. 本発明の第３の実施の形態による固体撮像装置を示す概略断面図である。It is a schematic sectional drawing which shows the solid-state imaging device by the 3rd Embodiment of this invention.

以下、本発明による固体撮像装置について、図面を参照して説明する。   Hereinafter, a solid-state imaging device according to the present invention will be described with reference to the drawings.

［第１の実施の形態］
図１は、本発明の第１の実施の形態による固体撮像装置１を示す概略断面図である。 [First Embodiment]
FIG. 1 is a schematic cross-sectional view showing a solid-state imaging device 1 according to the first embodiment of the present invention.

本実施の形態による固体撮像装置１は、固体撮像素子２と、開口３ａを有し固体撮像素子２を収容した凹形状のパッケージ本体３と、固体撮像素子２の光入射側に配置された板状部材４と、を備えている。固体撮像素子２は、ＣＣＤ型やＣＭＯＳ型などの固体撮像素子でもよいし、他の固体撮像素子でもよい。   The solid-state imaging device 1 according to the present embodiment includes a solid-state imaging device 2, a concave package body 3 having an opening 3a and accommodating the solid-state imaging device 2, and a plate disposed on the light incident side of the solid-state imaging device 2. Shaped member 4. The solid-state imaging device 2 may be a solid-state imaging device such as a CCD type or a CMOS type, or may be another solid-state imaging device.

本実施の形態では、パッケージ本体３は、平面視で長方形状の底板５と、上側枠板６と、底板５と上側枠板６との間に挟まれた下側枠板７とから構成され、これらの間は強固に接着されている。本実施の形態では、上側枠板６が、パッケージ本体３における開口３ａの周囲部となっている。底板５、上側枠板６及び下側枠板７はそれぞれ例えばセラミック板からなるが、パッケージ本体３の材料は必ずしもセラミックに限定されるものではない。また、パッケージ本体３は、必ずしも複数の部材で構成する必要はなく、一体に構成することも可能である。   In the present embodiment, the package body 3 includes a rectangular bottom plate 5 in plan view, an upper frame plate 6, and a lower frame plate 7 sandwiched between the bottom plate 5 and the upper frame plate 6. These are firmly bonded. In the present embodiment, the upper frame plate 6 is a peripheral portion of the opening 3 a in the package body 3. The bottom plate 5, the upper frame plate 6, and the lower frame plate 7 are each made of, for example, a ceramic plate, but the material of the package body 3 is not necessarily limited to ceramic. Further, the package body 3 does not necessarily need to be constituted by a plurality of members, and can be constituted integrally.

固体撮像素子２は、光入射側を開口３ａ側（上側）としてパッケージ本体３内に収容され、底板５に固定されている。パッケージ本体３には内部端子８が設けられており、固体撮像素子２と内部端子８とはワイヤ９により電気的に接続されている。内部端子８は、外部接続端子１０と配線（図示せず）にて電気的に接続されている。これにより、固体撮像素子２は、ワイヤ９、内部端子８及び外部接続端子１０を介して、外界と電気的に接続されるようになっている。   The solid-state imaging device 2 is accommodated in the package body 3 with the light incident side as the opening 3 a side (upper side), and is fixed to the bottom plate 5. The package body 3 is provided with an internal terminal 8, and the solid-state imaging device 2 and the internal terminal 8 are electrically connected by a wire 9. The internal terminal 8 is electrically connected to the external connection terminal 10 by wiring (not shown). As a result, the solid-state imaging device 2 is electrically connected to the outside through the wire 9, the internal terminal 8, and the external connection terminal 10.

板状部材４は、パッケージ本体３の開口３ａに重ねられ、板状部材４の周辺部が、パッケージ本体３における開口３ａの周囲部である上側枠板６の上面に接着剤（図示せず）で接着されることで、パッケージ本体３の開口３ａが板状部材４により封止されている。パッケージ本体３内には、例えば不活性ガスが封入されている。入射光は、板状部材４を透過した後、固体撮像素子２に導かれる。   The plate-like member 4 is overlaid on the opening 3 a of the package main body 3, and the peripheral portion of the plate-like member 4 is adhesive (not shown) on the upper surface of the upper frame plate 6 that is the peripheral portion of the opening 3 a in the package main body 3. The opening 3a of the package main body 3 is sealed with the plate-like member 4 by being bonded together. In the package main body 3, for example, an inert gas is sealed. Incident light is guided to the solid-state imaging device 2 after passing through the plate-like member 4.

本実施の形態では、板状部材４は、絶縁性の通常のガラスとは異なり、１０１２Ω・ｃｍ以下の抵抗率（室温における抵抗率）及び透光性を有する材料からなる。板状部材４を１０１２Ω・ｃｍ以下の抵抗率を有する材料で構成すると、その抵抗率が低いことから、板状部材４のいずれの箇所の電荷も板状部材４のいずれの箇所からも逃げ易くなる。板状部材４の電荷をより逃げ易くして板状部材４に対する静電気によるゴミの付着をより低減するためには、板状部材４の室温における抵抗率は、１０８Ω・ｃｍ以下であることがより好ましく、１０６Ω・ｃｍ以下であることがより一層好ましい。このような板状部材４の材料として、具体的には、例えば、種々の導電性ガラス（特許２９８９１７６号公報、特開２００８−２４５４０号公報など）を挙げることができる。なお、板状部材４の材料は、必ずしもガラスに限定されるものではなく、例えば樹脂でもよい。 In the present embodiment, the plate-like member 4 is made of a material having a resistivity (resistivity at room temperature) of 10 12 Ω · cm or less and translucency, unlike an ordinary insulating glass. If the plate-like member 4 is made of a material having a resistivity of 10 12 Ω · cm or less, the resistivity is low, so that any charge on the plate-like member 4 can be obtained from any place on the plate-like member 4. Easier to escape. In order to make the electric charge of the plate-like member 4 easier to escape and to reduce the adhesion of dust to the plate-like member 4 due to static electricity, the resistivity of the plate-like member 4 at room temperature is 10 8 Ω · cm or less. Is more preferably 10 6 Ω · cm or less. Specific examples of the material of the plate-like member 4 include various conductive glasses (Japanese Patent No. 2989176, Japanese Patent Application Laid-Open No. 2008-24540, etc.). In addition, the material of the plate-shaped member 4 is not necessarily limited to glass, For example, resin may be sufficient.

本実施の形態によれば、板状部材４が低抵抗率の材料からなり板状部材４そのものが低抵抗化されているので、前述したように、板状部材４のいずれの箇所の電荷も板状部材４のいずれの箇所からも逃げ易くなる。したがって、例えば、固体撮像装置１の組み立て工程（固体撮像素子２の実装工程）において、板状部材４をハンドリングする装置の所定箇所が板状部材４の外側面やその他の任意の箇所に触れることで、板状部材４の内側面（固体撮像素子２側の面）の電荷を含む板状部材４のいずれの箇所の電荷も、前記ハンドリングする装置に逃がされ、板状部材４の固体撮像素子２側を含む板状部材４のいずれの箇所の帯電も防止される。このため、本実施の形態によれば、前述した従来の各固体撮像装置に比べて、組み立て前の板状部材４の固体撮像素子２側の帯電を容易に防止することができ、板状部材４の固体撮像素子２側にゴミが付着したままで、固体撮像素子２を封止してしまうことが少なくなる。その結果、本実施の形態によれば、前述した従来の各固体撮像装置に比べて、歩留りの向上や工程の直行率の向上を図ることができる。   According to the present embodiment, the plate-like member 4 is made of a low resistivity material and the plate-like member 4 itself has a low resistance. It becomes easy to escape from any part of the plate-like member 4. Therefore, for example, in the assembly process of the solid-state imaging device 1 (the mounting process of the solid-state imaging device 2), a predetermined portion of the device that handles the plate-like member 4 touches the outer surface of the plate-like member 4 or any other location. Thus, the charge on any part of the plate-like member 4 including the charge on the inner surface of the plate-like member 4 (the surface on the solid-state imaging device 2 side) is released to the handling device, and the solid-state imaging of the plate-like member 4 Any portion of the plate-like member 4 including the element 2 side is prevented from being charged. For this reason, according to the present embodiment, charging of the plate-like member 4 before assembly on the solid-state imaging device 2 side can be easily prevented as compared with the conventional solid-state imaging devices described above. 4 is less likely to seal the solid-state image sensor 2 while dust is attached to the solid-state image sensor 2 side. As a result, according to the present embodiment, it is possible to improve the yield and the straightness rate of the process as compared with the conventional solid-state imaging devices described above.

なお、固体撮像装置１の組み立て工程において板状部材４をハンドリングする装置、梱包材及び作業者等が好適にアースされており、かつ、板状部材４が通過するエリアが除電された環境になっており、そこから発塵したゴミが除電されていることが、静電気による板状部材４へのゴミ付着を防止するために、より好ましい。   In addition, in the assembly process of the solid-state imaging device 1, an apparatus for handling the plate-like member 4, a packing material, an operator, and the like are suitably grounded, and an area through which the plate-like member 4 passes is an environment where static electricity is removed. In order to prevent dust from being attached to the plate member 4 due to static electricity, it is more preferable that the dust generated from the dust is discharged.

［第２の実施の形態］
図２は、本発明の第２の実施の形態による固体撮像装置２１を示す概略断面図であり、図１に対応している。図２において、図１中の要素と同一又は対応する要素には同一符号を付し、その重複する説明は省略する。 [Second Embodiment]
FIG. 2 is a schematic cross-sectional view showing a solid-state imaging device 21 according to the second embodiment of the present invention, and corresponds to FIG. 2, elements that are the same as or correspond to elements in FIG. 1 are given the same reference numerals, and redundant descriptions thereof are omitted.

本実施の形態による固体撮像装置２１が前記第１の実施の形態による固体撮像装置１と異なる所は、板状部材４の外側面及び内側面にそれぞれ帯電防止膜２２，２３がそれぞれ形成されている点と、板状部材４が、パッケージ本体３に設けられた導電路２４によって、導電部としての外部接続端子１０の１つであるアース端子に電気的に接続されている点のみである。導電路２４は、図２では模式的に記載しているが、実際には公知の接続構造が採用される。なお、本実施の形態では、導電路２４が板状部材４に直接的に接続されているが、例えば、導電路２４を帯電防止膜２３に直接的に接続し、板状部材４を帯電防止膜２３を介して導電路２４に電気的に接続してもよい。   The solid-state imaging device 21 according to the present embodiment is different from the solid-state imaging device 1 according to the first embodiment in that antistatic films 22 and 23 are respectively formed on the outer surface and the inner surface of the plate member 4. The only difference is that the plate-like member 4 is electrically connected to a ground terminal which is one of the external connection terminals 10 as a conductive portion by a conductive path 24 provided in the package body 3. The conductive path 24 is schematically shown in FIG. 2, but a known connection structure is actually used. In the present embodiment, the conductive path 24 is directly connected to the plate-like member 4. For example, the conductive path 24 is directly connected to the antistatic film 23 to prevent the plate-like member 4 from being charged. It may be electrically connected to the conductive path 24 through the film 23.

本実施の形態では、帯電防止膜２２，２３として、酸化インジウム系透明導電膜や酸化インジウム錫膜（ＩＴＯ膜）などの透明導電膜を用いることができる。帯電防止膜２２，２３の抵抗率は、板状部材４の抵抗率よりも小さいことが好ましい。この場合には、前記第１の実施の形態に比べて、より帯電防止効果を高めることができる。なお、本実施の形態では、帯電防止膜２２，２３としては、導電膜に代えて、他の帯電防止膜を形成してもよい。   In the present embodiment, a transparent conductive film such as an indium oxide-based transparent conductive film or an indium tin oxide film (ITO film) can be used as the antistatic films 22 and 23. The resistivity of the antistatic films 22 and 23 is preferably smaller than the resistivity of the plate-like member 4. In this case, the antistatic effect can be further enhanced as compared with the first embodiment. In the present embodiment, as the antistatic films 22 and 23, other antistatic films may be formed instead of the conductive films.

本実施の形態によれば、前記第１の実施の形態と同じく板状部材４が低抵抗率の材料からなり板状部材４そのものが低抵抗化されているので、板状部材４の外側面の帯電防止膜２２と板状部材４の内側面の帯電防止膜２３との間が、板状部材４を介して電気的に接続されている。したがって、いずれの帯電防止膜２２，２３の電荷も、帯電防止膜２２，２３のいずれの箇所からも逃がすことが可能となる。このため、固体撮像装置２１の組み立て工程において、例えば、板状部材４をハンドリングする装置の所定箇所が板状部材４の外側面の帯電防止膜２２に触れると、外側面の帯電防止膜２２の電荷が前記ハンドリングする装置へ逃がされるだけでなく、内側面の帯電防止膜２３の電荷が板状部材４及び外側面の帯電防止膜２２を介して前記ハンドリングする装置へ逃がされ、いずれの帯電防止膜２２，２３の帯電も防止される。したがって、本実施の形態によれば、前述した従来の各固体撮像装置に比べて、組み立て前の板状部材４の固体撮像素子２側の帯電を容易に防止することができ、板状部材４の固体撮像素子２側にゴミが付着したままで、固体撮像素子２を封止してしまうことが少なくなる。その結果、本実施の形態によれば、前述した従来の各固体撮像装置に比べて、歩留りの向上や工程の直行率の向上を図ることができる。   According to the present embodiment, as in the first embodiment, the plate-like member 4 is made of a low resistivity material and the plate-like member 4 itself has a low resistance. The antistatic film 22 and the antistatic film 23 on the inner surface of the plate member 4 are electrically connected via the plate member 4. Accordingly, the charge of any of the antistatic films 22 and 23 can be released from any part of the antistatic films 22 and 23. For this reason, in the assembly process of the solid-state imaging device 21, for example, when a predetermined portion of the device for handling the plate-like member 4 touches the antistatic film 22 on the outer surface of the plate-like member 4, Not only is the charge released to the handling device, but the charge of the antistatic film 23 on the inner surface is released to the handling device via the plate-like member 4 and the antistatic film 22 on the outer surface, The prevention films 22 and 23 are also prevented from being charged. Therefore, according to the present embodiment, charging on the solid-state imaging device 2 side of the plate-like member 4 before assembly can be easily prevented as compared with the conventional solid-state imaging devices described above. The solid-state image sensor 2 is less likely to be sealed while dust is attached to the solid-state image sensor 2 side. As a result, according to the present embodiment, it is possible to improve the yield and the straightness rate of the process as compared with the conventional solid-state imaging devices described above.

また、本実施の形態によれば、板状部材４がアース端子に電気的に接続されているので、帯電防止膜２２，２３も、板状部材４を介してアース端子に電気的に接続されている。したがって、完成後の固体撮像装置２１の使用に際し、アース端子を所定の箇所に接続することで、帯電防止膜２２，２３の電荷をより確実に逃がすことができ、帯電防止膜２２，２３の帯電をより確実に防止することができる。このため、本実施の形態によれば、完成後の固体撮像装置２１を使用しているときの、板状部材４の両側に対するゴミの付着も低減することができる。   Further, according to the present embodiment, since the plate member 4 is electrically connected to the ground terminal, the antistatic films 22 and 23 are also electrically connected to the ground terminal via the plate member 4. ing. Therefore, when using the solid-state imaging device 21 after completion, the charge of the antistatic films 22 and 23 can be more reliably released by connecting the ground terminal to a predetermined location, and the antistatic films 22 and 23 can be charged. Can be prevented more reliably. For this reason, according to this Embodiment, when using the solid-state imaging device 21 after completion, adhesion of the dust with respect to the both sides of the plate-shaped member 4 can also be reduced.

本実施の形態による固体撮像装置２１を次のように変形してもよい。第１に、帯電防止膜２２，２３に両方又はいずれか一方を取り除いてもよい。この場合、前記第１の実施の形態及び本実施の形態と同様に、固体撮像装置１の組み立て中の板状部材４の固体撮像素子２側へのゴミの付着を低減することができるのみならず、本実施の形態と同様に、固体撮像装置２１の使用中における板状部材４の両側に対するゴミの付着も低減することができる。   The solid-state imaging device 21 according to the present embodiment may be modified as follows. First, both or one of the antistatic films 22 and 23 may be removed. In this case, similarly to the first embodiment and the present embodiment, it is only possible to reduce the adhesion of dust to the solid-state imaging device 2 side of the plate-like member 4 during assembly of the solid-state imaging device 1. As in the present embodiment, it is possible to reduce the adhesion of dust to both sides of the plate-like member 4 during use of the solid-state imaging device 21.

第２に、本実施の形態に固体撮像装置２１を、板状部材４をアース端子に接続しないように変形してもよい。この場合、帯電防止膜２２，２３のいずれか一方を取り除いてもよい。これらの場合であっても、前記第１の実施の形態及び本実施の形態と同様に、固体撮像装置１の組み立て中の板状部材４の固体撮像素子２側へのゴミの付着を低減することができる。   Second, the solid-state imaging device 21 may be modified in this embodiment so that the plate-like member 4 is not connected to the ground terminal. In this case, either one of the antistatic films 22 and 23 may be removed. Even in these cases, as in the first embodiment and the present embodiment, adhesion of dust to the solid-state imaging device 2 side of the plate-like member 4 during assembly of the solid-state imaging device 1 is reduced. be able to.

［第３の実施の形態］
図３は、本発明の第３の実施の形態による固体撮像装置３１を示す概略断面図であり、図１及び図２に対応している。図３において、図１及び図３中の要素と同一又は対応する要素には同一符号を付し、その重複する説明は省略する。 [Third Embodiment]
FIG. 3 is a schematic sectional view showing a solid-state imaging device 31 according to the third embodiment of the present invention, and corresponds to FIG. 1 and FIG. 3, elements that are the same as or correspond to those in FIGS. 1 and 3 are given the same reference numerals, and redundant descriptions thereof are omitted.

本実施の形態による固体撮像装置３１が前記第２の実施の形態による固体撮像装置２１と異なる所は、板状部材４の外側面の帯電防止膜２２が取り除かれている点と、板状部材４の内側面の帯電防止膜２３が、固体撮像素子２の撮像エリア（有効受光領域）の周辺を囲むように額縁状をなすように形成されている点のみである。帯電防止膜２３は、透明である必要はないが、導電膜であることが好ましい。また、帯電防止膜２３の抵抗率は、固体撮像装置２１の抵抗率よりも小さいことが好ましい。本実施の形態では、導電路２４が板状部材４に直接的に接続されているが、導電路２４を帯電防止膜２３に直接的に接続することがより好ましい。   The solid-state imaging device 31 according to the present embodiment is different from the solid-state imaging device 21 according to the second embodiment in that the antistatic film 22 on the outer surface of the plate-like member 4 is removed, and the plate-like member. The only reason is that the antistatic film 23 on the inner side surface 4 is formed in a frame shape so as to surround the imaging area (effective light receiving area) of the solid-state imaging device 2. The antistatic film 23 does not need to be transparent, but is preferably a conductive film. Further, the resistivity of the antistatic film 23 is preferably smaller than the resistivity of the solid-state imaging device 21. In the present embodiment, the conductive path 24 is directly connected to the plate-like member 4, but it is more preferable that the conductive path 24 is directly connected to the antistatic film 23.

本実施の形態によっても、前記第１及び第２の実施の形態と同様に、固体撮像装置１の組み立て中の板状部材４の固体撮像素子２側へのゴミの付着を低減することができるのみならず、前記第２の実施の形態と同様に、固体撮像装置２１の使用中における板状部材４の両側に対するゴミの付着も低減することができる。   Also according to the present embodiment, as in the first and second embodiments, adhesion of dust to the solid-state imaging device 2 side of the plate-like member 4 during assembly of the solid-state imaging device 1 can be reduced. In addition, as in the second embodiment, it is possible to reduce the adhesion of dust to both sides of the plate-like member 4 during use of the solid-state imaging device 21.

前記第２の実施の形態では、帯電防止膜２２，２３が固体撮像素子２の撮像エリアに対応する領域にも形成されているので、帯電防止膜２２，２３に、ピンホール、汚れ、膜質不良によるシミなどのコート不良が発生すると、撮像した画像の劣化を招いてしまう。そこで、それらのコート不良が発生しないように、帯電防止膜２２，２３の光学薄膜としての品質を維持するべく厳密な膜形成管理が要求され、クリーン化対策された装置と環境下で運用する帯電防止膜２２，２３の形成が必要となる。これは、歩留りの低下要因やコスト上昇要因となる。これに対し、本実施の形態では、固体撮像素子２の撮像エリアに対応する領域には帯電防止膜が形成されていないので、厳密な膜形成管理が不要となり、歩留りの低下やコスト上昇を回避することができる。この点は、前記第１の実施の形態についても同様である。   In the second embodiment, since the antistatic films 22 and 23 are also formed in a region corresponding to the imaging area of the solid-state imaging device 2, pinholes, dirt, and poor film quality are formed on the antistatic films 22 and 23. When a coating defect such as a stain due to the occurrence of a spot occurs, the captured image is deteriorated. Therefore, in order to prevent such coating defects from occurring, strict film formation management is required to maintain the quality of the antistatic films 22 and 23 as an optical thin film. The prevention films 22 and 23 need to be formed. This becomes a factor of yield reduction and cost increase. On the other hand, in the present embodiment, since the antistatic film is not formed in the region corresponding to the imaging area of the solid-state imaging device 2, strict film formation management is not necessary, and yield reduction and cost increase are avoided. can do. This is the same for the first embodiment.

なお、本実施の形態による固体撮像装置３１は、次のように変形してもよい。第１に、板状部材４の外側面にも、帯電防止膜を、固体撮像素子２の撮像エリアの周辺を囲むように額縁状をなすように形成してもよい。この場合、板状部材４の内側面の帯電防止膜２３は取り除いてもよい。   Note that the solid-state imaging device 31 according to the present embodiment may be modified as follows. First, an antistatic film may be formed on the outer surface of the plate-like member 4 so as to have a frame shape so as to surround the periphery of the imaging area of the solid-state imaging device 2. In this case, the antistatic film 23 on the inner surface of the plate-like member 4 may be removed.

以上、本発明の各実施の形態及びその変形例について説明したが、本発明はこれらに限定されるものではない。例えば、前記各実施の形態において、板状部材４は光学的ローパスフィルタであってもよい。勿論、本発明では、板状部材４は光学的フィルタ機能を有していなくてもよい。   As mentioned above, although each embodiment of this invention and its modification were demonstrated, this invention is not limited to these. For example, in each of the above embodiments, the plate member 4 may be an optical low-pass filter. Of course, in the present invention, the plate-like member 4 may not have an optical filter function.

また、特開平６−２０４４４２号公報には、パッケージを用いずに、固体撮像素子と、その光入射側に配置されたガラス板とを備え、固体撮像素子の周辺部とガラス基板との間が封止された固体撮像装置が開示されている。本発明は、このような固体撮像装置にも適用することができる。この場合、前記ガラス板に代えて、１０１２Ω・ｃｍ以下の抵抗率及び透光性を有する材料からなる板状部材を用いればよい。 Japanese Patent Application Laid-Open No. 6-204442 includes a solid-state image sensor and a glass plate disposed on the light incident side without using a package, and a space between the periphery of the solid-state image sensor and the glass substrate is provided. A sealed solid-state imaging device is disclosed. The present invention can also be applied to such a solid-state imaging device. In this case, instead of the glass plate, a plate member made of a material having a resistivity of 10 12 Ω · cm or less and translucency may be used.

１，２１，３１ 固体撮像装置
２ 固体撮像素子
３ パッケージ本体
４ 板状部材
２２，２３ 帯電防止膜 1, 21, 31 Solid-state imaging device 2 Solid-state imaging device 3 Package body 4 Plate-like member 22, 23 Antistatic film

Claims (5)

固体撮像素子と、前記固体撮像素子の光入射側に配置され１０１２Ω・ｃｍ以下の抵抗率及び透光性を有する材料からなる板状部材と、を備えたことを特徴とする固体撮像装置。 A solid-state imaging device comprising: a solid-state imaging device; and a plate-like member that is disposed on a light incident side of the solid-state imaging device and is made of a material having a resistivity of 10 12 Ω · cm or less and translucency. . 前記板状部材の表面又は裏面の少なくとも一部の領域に、帯電防止膜が形成されたことを特徴とする請求項１記載の固体撮像装置。   The solid-state imaging device according to claim 1, wherein an antistatic film is formed on at least a part of the front surface or the back surface of the plate-like member. 前記帯電防止膜が導電膜であることを特徴とする請求項２記載の固体撮像装置。   The solid-state imaging device according to claim 2, wherein the antistatic film is a conductive film. 開口を有し前記固体撮像素子を収容した凹形状のパッケージ本体を備え、前記開口が前記板状部材で封止されたことを特徴とする請求項１乃至３のいずれかに記載の固体撮像装置。   The solid-state imaging device according to claim 1, further comprising a concave package main body having an opening and accommodating the solid-state imaging element, wherein the opening is sealed with the plate-like member. . 前記パッケージ本体に導電部が設けられ、前記導電部が前記板状部材と電気的に接続されたことを特徴とする請求項４記載の固体撮像装置。   The solid-state imaging device according to claim 4, wherein a conductive portion is provided in the package body, and the conductive portion is electrically connected to the plate-like member.
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