JP2011002853A - Method for producing microfabricated body and etching device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for producing a microfabricated body having a fine rugged pattern on a curved face such as a spherical face and a columnar face.SOLUTION: The method for producing a microfabricated body is provided with: a step where an inorganic resist layer is film-formed on an original plate having a curved face; a step where the inorganic resist layer film-formed on the original plate is exposure-developed to form a pattern on the inorganic resist layer; and a step where the original plate on which the pattern has been formed on the inorganic resist layer is arranged on an electrode having a curved face almost same as or similar to the curved face of the original plate, and the original plate is subjected to etching, and a rugged shape is formed on the surface of the original plate so as to produce a microfabricated body.

Description

  The present invention relates to a method for manufacturing a finely processed body and an etching apparatus.

  In recent years, various techniques for manufacturing finely processed bodies have been studied. For example, a technique for forming a fine and dense uneven structure (moth eye structure) on the surface of an optical element has been proposed for the purpose of preventing light surface reflection (see, for example, Non-Patent Document 1).

  In general, when a periodic concavo-convex shape is provided on the surface of an optical element, diffraction occurs when light passes through the surface, and the linear component of transmitted light is greatly reduced. However, diffraction does not occur when the concave-convex pitch is shorter than the wavelength of the transmitted light. For example, when the concave-convex shape is rectangular, for a single wavelength light corresponding to the pitch, depth, etc. Effective antireflection effect can be obtained.

  The inventors of the present invention have proposed a method that combines an optical disk master production process and an etching process as a method of manufacturing such a finely processed body (see, for example, Patent Document 1). In this method, a bell-shaped or elliptic frustum-shaped structure can be formed.

  In a general optical disk master production process, the concavo-convex pattern is produced as follows. First, a solution obtained by diluting a resist, which is a photosensitive material, with a thinner is applied onto a smooth glass substrate by a spin coating method to form a smooth resist film with a uniform film thickness on the substrate. Next, various exposure patterns are recorded and developed on the resist film of the substrate by an optical recording apparatus. Thus, a concavo-convex pattern having a uniform depth and width is formed.

JP 2008-176076 A

"Optical Technology Contact" Vol.43, No.11 (2005), 630-637

  By the way, in recent years, for the purpose of preventing reflection and the like, it has been desired to form the above-described concavo-convex structure (moth eye structure) on various optical components.

  Accordingly, an object of the present invention is to provide a method for manufacturing a finely processed body having a fine uneven pattern and an etching apparatus.

In order to solve the above-mentioned problem, the first invention
Forming a resist layer on the master,
Exposing and developing the resist layer formed on the master, and forming a pattern on the resist layer;
A master with a pattern formed on the resist layer is placed on the concave / convex shape of the electrode, and using the concave / convex shape of the electrode, anisotropic etching is performed obliquely to the surface of the master to form a concave / convex shape on the master surface. By doing so, a method for manufacturing a finely processed body is provided.

The second invention is
An etching reaction tank;
A first electrode and a second electrode disposed opposite to each other in an etching reaction tank;
The first electrode has an uneven shape to place the master,
A master having a pattern formed on the resist layer is disposed on the uneven shape of the first electrode, and anisotropic etching is performed obliquely with respect to the surface of the master using the uneven shape of the first electrode. This is an etching apparatus for producing a microfabricated body by forming an uneven shape on the surface.

  In the present invention, the tetragonal lattice means a regular tetragonal lattice. A quasi-tetragonal lattice means a distorted regular tetragonal lattice unlike a regular tetragonal lattice. Specifically, when the structures are arranged on a straight line, the quasi-tetragonal lattice means a tetragonal lattice in which a regular tetragonal lattice is stretched and distorted in a linear arrangement direction. When the structure is arranged on an arc, the quasi-tetragonal lattice is a tetragonal lattice in which a regular tetragonal lattice is distorted in an arc shape, or a regular tetragonal lattice is distorted in an arc shape, and This refers to a tetragonal lattice stretched and distorted in an arcuate arrangement direction.

  In the present invention, the hexagonal lattice means a regular hexagonal lattice. The quasi-hexagonal lattice means a distorted regular hexagonal lattice unlike a regular hexagonal lattice. Specifically, when the structures are arranged on a straight line, the quasi-hexagonal lattice means a hexagonal lattice obtained by stretching a regular hexagonal lattice in the linear arrangement direction and distorting it. When the structure is arranged on an arc, the quasi-hexagonal lattice is a hexagonal lattice in which a regular hexagonal lattice is distorted in an arc shape, or a regular hexagonal lattice is distorted in an arc shape, and This refers to a hexagonal lattice stretched and distorted in an arcuate arrangement direction.

  As described above, according to the present invention, it is possible to realize a method for manufacturing a finely processed body having a fine concavo-convex pattern.

1A is a schematic plan view showing an example of the configuration of the optical element according to the first embodiment of the present invention, FIG. 1B is a plan view showing an enlarged part of the optical element shown in FIG. 1A, and FIG. 1C. 1B is a cross-sectional view taken along tracks T1, T3,... In FIG. 1B, and FIG. 1D is a cross-sectional view taken along tracks T2, T4,. FIG. 2 is an enlarged perspective view showing a part of the optical element shown in FIG. FIG. 3A is a perspective view illustrating an example of the configuration of the master, and FIG. 3B is a plan view illustrating an enlarged part of the master illustrated in FIG. 3A. FIG. 4 is a schematic view showing an example of the configuration of an exposure apparatus for producing a master. FIG. 5 is a schematic diagram showing an example of the configuration of an etching apparatus for producing a master. 6A to 6C are process diagrams for explaining a method of manufacturing an optical element according to the first embodiment of the present invention. 7A to 7C are process diagrams for explaining a method of manufacturing an optical element according to the first embodiment of the present invention. FIG. 8 is a schematic view showing an example of the configuration of an exposure apparatus used for manufacturing an optical element according to the second embodiment of the present invention. FIG. 9 is a schematic view showing an example of the configuration of an exposure apparatus used for manufacturing an optical element according to the second embodiment of the present invention. FIG. 10A is a schematic plan view showing an example of the configuration of an optical element according to the fourth embodiment of the present invention. FIG. 10B is an enlarged plan view showing a part of the optical element shown in FIG. 10A. 10C is a cross-sectional view taken along tracks T1, T3,... In FIG. 10D is a cross-sectional view taken along tracks T2, T4,... In FIG. FIG. 11A is a schematic plan view showing an example of the configuration of an optical element according to the fifth embodiment of the present invention. FIG. 11B is an enlarged plan view showing a part of the optical element shown in FIG. 12A. 11C is a cross-sectional view taken along tracks T1, T3,... In FIG. 11D is a cross-sectional view taken along tracks T2, T4,... In FIG. 12A is a side view showing an example of the configuration of the master, and FIG. 12B is an enlarged plan view showing a part of the master shown in FIG. 12A. FIG. 13 is a schematic view showing an example of the configuration of an exposure apparatus for producing a master. FIG. 14 is a schematic diagram showing an example of the configuration of an etching apparatus for producing a master. FIG. 15A is a schematic plan view showing an example of the configuration of an optical element according to the sixth embodiment of the present invention. FIG. 15B is an enlarged plan view showing a part of the optical element shown in FIG. 15A. 15C is a cross-sectional view taken along tracks T1, T3,... In FIG. 15D is a cross-sectional view taken along tracks T2, T4,... In FIG. FIG. 16 is an enlarged perspective view showing a part of the optical element shown in FIG. FIG. 17A is a plan view showing an example of the configuration of the master, and FIG. 17B is a plan view showing an enlarged part of the master shown in FIG. 17A. FIG. 18 is a schematic diagram showing an example of the configuration of an exposure apparatus for producing a master. FIG. 19 is a schematic view showing an example of the configuration of an etching apparatus for producing a master. 20A to 20C are process diagrams for explaining a method of manufacturing an optical element according to the sixth embodiment of the present invention. 21A to 21C are process diagrams illustrating a method for manufacturing an optical element according to the sixth embodiment of the present invention. FIG. 22A is a schematic plan view showing an example of the configuration of an optical element according to the seventh embodiment of the present invention. 22B is an enlarged plan view showing a part of the optical element shown in FIG. 22A. 19C is a cross-sectional view taken along tracks T1, T3,... In FIG. 22D is a cross-sectional view taken along tracks T2, T4,... In FIG. FIG. 23 is an enlarged perspective view showing a part of the optical element shown in FIG. FIG. 24 is a cross-sectional view showing an example of the configuration of the liquid crystal display device according to the ninth embodiment of the present invention. FIG. 25 is a cross-sectional view showing an example of the configuration of the liquid crystal display device according to the tenth embodiment of the present invention. 25A is an SEM photograph of the optical element of Example 1, FIG. 25B is an SEM photograph of the optical element of Example 2, and FIG. 25C is an SEM photograph of the optical element of Example 3.

Embodiments of the present invention will be described in the following order with reference to the drawings. In all the drawings of the following embodiments, the same or corresponding parts are denoted by the same reference numerals.
(1) First embodiment (example of cylindrical master)
(2) Second embodiment (example in which exposure is performed with a cylindrical master disk lying sideways)
(3) Third embodiment (example of arranging structures on the inner peripheral surface of a cylindrical master)
(4) Fourth embodiment (example in which structures are arranged in a tetragonal lattice)
(5) Fifth embodiment (manufacturing example of spherical master)
(6) Sixth embodiment (master having an inclined structure)
(7) Seventh embodiment (example in which a concave structure is formed on the surface of a substrate)
(8) Eighth Embodiment (Example in which the uneven pattern of the resist layer is directly transferred)
(9) Ninth Embodiment (First Application Example for Display Device)
(10) Tenth embodiment (second application example to display device)

<1. First Embodiment>
[Configuration of optical element]
FIG. 1A is a schematic plan view showing an example of the configuration of an optical element according to the first embodiment of the present invention. FIG. 1B is an enlarged plan view showing a part of the optical element shown in FIG. 1A. 1C is a cross-sectional view taken along tracks T1, T3,... In FIG. 1D is a cross-sectional view taken along tracks T2, T4,... In FIG.

  The optical element 1 is suitable for application to various optical components such as a display, optoelectronics, optical communication (optical fiber), solar cell, and lighting device. Specifically, for example, as the optical component, any one of a polarizer, a lens, a light guide plate, a window material, and a display element can be listed.

The optical element 1 includes a base 2 and a structure 3 that is a convex portion formed on the surface of the base 2. The optical element 1 has a function of preventing reflection of light incident on the surface of the substrate on which the structure 3 is provided. In the following, as shown in FIG. 1, two axes orthogonal to each other in one main surface of the base 2 are referred to as an X axis and a Y axis, and an axis perpendicular to one main surface of the base 2 is referred to as a Z axis. Further, when there is a gap 2a between the structures 3, it is preferable to provide a fine uneven shape in the gap 2a. This is because the reflectance of the optical element 1 can be further reduced by providing such a fine uneven shape.
Hereinafter, the base 2 and the structure 3 constituting the optical element 1 will be sequentially described.

(Substrate)
The substrate 2 is a transparent substrate having transparency. Examples of the material of the base 2 include transparent synthetic resins such as polycarbonate (PC) and polyethylene terephthalate (PET), and materials mainly composed of glass, but are not particularly limited to these materials. .

  Examples of the shape of the substrate 2 include a film shape, a sheet shape, a plate shape, and a block shape, but are not particularly limited to these shapes. The shape of the base 2 is a main body portion of various optical devices that require a predetermined antireflection function such as a display, optoelectronics, optical communication, a solar cell, and a lighting device, and a sheet or film attached to these optical devices. It is preferable to select and decide according to the shape of the antireflection functional component.

(Structure)
FIG. 2 is an enlarged perspective view showing a part of the optical element shown in FIG. A large number of structures 3 that are convex portions are arranged on the surface of the base 2. The structures 3 are periodically two-dimensionally arranged at a short pitch equal to or less than the wavelength of light under the usage environment, for example, at a pitch comparable to the wavelength of visible light. The light under the usage environment is, for example, ultraviolet light, visible light, or infrared light. Here, ultraviolet light means light having a wavelength range of 10 nm or more and less than 360 nm, visible light means light of 360 nm or more and 830 nm or less, and infrared light means light of more than 830 nm and 1 mm or less.

  The structure 3 of the optical element 1 has an arrangement form that forms a plurality of rows of tracks T1, T2, T3,... (Hereinafter collectively referred to as “tracks T”) on the surface of the base 2. Here, the track refers to a portion where the structures 3 are arranged in a straight line in a row. The lower portions of the adjacent structures 3 may be overlapped to join the lower portions of the structures 3 together. The bonding of the structures 3 is performed by all or part of the structures 3 that are adjacent to each other. For example, the lower portions of the structures 3 arranged in the track direction are overlapped and joined. In this manner, the reflection characteristics can be improved by bonding the lower portions of the structures 3 together.

  The structure 3 is disposed at a position shifted by a half pitch between two adjacent tracks T. Specifically, between two adjacent tracks T, the structure of the other track (for example, T2) is positioned at the intermediate position (position shifted by a half pitch) of the structure 3 arranged on one of the tracks (for example, T1). 3 is arranged. As a result, as shown in FIG. 1B, a hexagonal lattice pattern or a quasi-hexagonal lattice pattern in which the center of the structure 3 is located at each point of a1 to a7 between adjacent three rows of tracks (T1 to T3) is formed. The structure 3 is arranged on the surface. In the first embodiment, the hexagonal lattice pattern means a regular hexagonal lattice pattern. The quasi-hexagonal lattice pattern is a distorted hexagonal lattice pattern that is stretched in the track extending direction (X-axis direction), unlike a regular hexagonal lattice pattern.

  When the structures 3 are arranged so as to form a quasi-hexagonal lattice pattern, as shown in FIG. 1B, the arrangement pitch P1 (distance between a1 and a2) of the structures 3 in the same track (for example, T1). Is the arrangement pitch of the structures 3 between two adjacent tracks (for example, T1 and T2), that is, the arrangement pitch P2 of the structures 3 in the ± θ direction with respect to the track extending direction (for example, a1-a7, a2- It is preferable that the distance is longer than the distance a7). By arranging the structures 3 in this way, the packing density of the structures 3 can be further improved.

  The height of the structure 3 is not particularly limited, and is appropriately set according to the wavelength region of light to be transmitted. The height of the structure 3 is, for example, 236 nm to 450 nm, preferably 415 nm to 421 nm. The aspect ratio (height H / arrangement pitch P) of the structures 3 is preferably set in the range of 0.81 to 1.46. If it is less than 0.81, the reflection characteristics and the transmission characteristics tend to be reduced, and if it exceeds 1.46, the peeling characteristics are lowered during the production of the optical element 1, and the replica tends to be unrecoverable. It is.

In the present invention, the aspect ratio is defined by the following formula (1).
Aspect ratio = H / P (1)
However, H: Height of the structure 3, P: Average arrangement pitch (average period)
Here, the average arrangement pitch P is defined by the following equation (2).
Average arrangement pitch P = (P1 + P2 + P2) / 3 (2)
Where P1: arrangement pitch in the track extending direction (track extending direction period), P2: ± θ direction with respect to the track extending direction (where θ = 60 ° −δ, where δ is preferably Is 0 ° <δ ≦ 11 °, more preferably 3 ° ≦ δ ≦ 6 °) (pitch in θ direction)

  Further, the height H of the structures 3 is the height H2 of the structures 3 in the column direction (see FIG. 2). Here, the column direction means a direction (Y-axis direction) orthogonal to the track extending direction (X-axis direction) in the substrate surface. When the optical element 1 is manufactured by a manufacturing method described later, it is preferable that the height H1 in the track extending direction of the structure 3 is smaller than the height H2 in the column direction. With such a height relationship, in the manufacturing method described later, the height of the structure 3 in a portion other than the track extending direction is substantially the same as the height H2 in the column direction. For this reason, the height H of the structures 3 is represented by the height H2 in the column direction.

  In FIG. 2, the structures 3 have the same shape, but the shape of the structure 3 is not limited to this, and two or more types of structures 3 are formed on the surface of the base. It may be. The structure 3 may be formed integrally with the base 2.

  Note that the aspect ratios of the structures 3 are not limited to the same, and the structures 3 are configured to have a certain height distribution (for example, a range of an aspect ratio of about 0.83 to 1.46). Also good. By providing the structure 3 having a height distribution, the wavelength dependence of the reflection characteristics can be reduced. Therefore, the optical element 1 having excellent antireflection characteristics can be realized.

  Here, the height distribution means that the structures 3 having two or more heights (depths) are provided on the surface of the base 2. That is, it means that the structure 3 having a reference height and the structure 3 having a height different from the structure 3 are provided on the surface of the base 2. The structures 3 having a height different from the reference are provided, for example, on the surface of the base 2 periodically or non-periodically (randomly). As the direction of the periodicity, for example, a track extending direction, a column direction, and the like can be given.

  The material of the structure 3 is preferably, for example, an ionizing radiation curable resin that is cured by ultraviolet rays or electron beams, or a thermosetting resin that is cured by heat, and an ultraviolet curable resin that can be cured by ultraviolet rays. The main component is most preferable.

  The structure 3 preferably has a curved surface that gradually spreads from the top to the bottom of the structure 3. This is because transferability can be improved by using such a shape.

  The top of the structure 3 is, for example, a flat surface or a convex curved surface, preferably a convex curved surface. Thus, the durability of the optical element 1 can be improved by using a convex curved surface. In addition, a low refractive index layer having a lower refractive index than that of the structure 3 may be formed on the top of the structure 3, and by forming such a low refractive index layer, the reflectance can be lowered. Become.

  Examples of the overall shape of the structure 3 include a cone shape. Examples of the cone shape include a cone shape, a truncated cone shape, an elliptical cone shape, an elliptical truncated cone shape, a cone shape having a curvature at the top portion, and an elliptic cone shape having a curvature at the top portion. Here, in addition to the cone shape and the truncated cone shape, the cone shape includes an elliptical cone shape, an elliptical truncated cone shape, a cone shape with a curvature at the top, and an elliptic cone shape with a curvature at the top. It is a concept that includes. Further, the truncated cone shape refers to a shape obtained by cutting off the top portion of the truncated cone shape, and the elliptical truncated cone shape refers to a shape obtained by cutting off the top portion of the elliptical cone. Note that the overall shape of the structure 3 is not limited to these shapes, and can be appropriately selected according to desired characteristics.

  More specifically, the structure 3 having an elliptical cone shape is an elliptical, oval or egg-shaped cone structure having a bottom surface having a major axis and a minor axis, and a top portion having a curved surface. The structure 3 having an elliptical truncated cone shape is an elliptical, oval or egg-shaped pyramid structure with a bottom surface having a major axis and a minor axis, and a top portion is flat. When the structure 3 has an elliptical cone shape or an elliptical truncated cone shape, the structure 3 is formed on the substrate surface so that the major axis direction of the bottom surface of the structure 3 is the track extending direction (X-axis direction). It is preferable.

[Master configuration]
FIG. 3 shows an example of the configuration of a master for producing an optical element having the above-described configuration. As shown in FIG. 3, the master 11 is a so-called roll master, and has a configuration in which a large number of structures 13 that are concave portions are arranged on the surface of a cylindrical master 12. The structures 13 are periodically two-dimensionally arranged at a pitch equal to or less than the wavelength of light in the environment in which the optical element 1 is used, for example, the wavelength of visible light. For example, the structure 13 is arranged concentrically or spirally on the surface of the columnar master 12. The structure 13 is for forming the structure 3 that is a convex portion on the surface of the base 2 described above. The material of the master 12 can be glass, for example, but is not limited to this material.

[Configuration of exposure apparatus]
FIG. 4 is a schematic diagram showing an example of the configuration of an exposure apparatus for producing a master having the above-described configuration. This exposure apparatus is configured based on an optical disk recording apparatus.

  The laser light source 21 is a light source for exposing the resist deposited on the surface of the master 12 as a recording medium, and oscillates a recording laser beam 15 having a wavelength λ = 266 nm, for example. The laser light 15 emitted from the laser light source 21 travels straight as a parallel beam and enters an electro-optic element (EOM: Electro Optical Modulator) 22. The laser beam 15 transmitted through the electro-optical element 22 is reflected by the mirror 23 and guided to the modulation optical system 25.

  The mirror 23 is composed of a polarization beam splitter and has a function of reflecting one polarization component and transmitting the other polarization component. The polarized light component transmitted through the mirror 23 is received by the photodiode 24, and the electro-optic element 22 is controlled based on the received light signal, and the phase modulation of the laser light 15 is performed.

In the modulation optical system 25, the laser light 15 is collected by an acousto-optic device (AOM: Acoust-Optic Modulator) 27 made of glass (SiO ₂ ) by a condenser lens 26. The laser beam 15 is intensity-modulated by the acousto-optic element 27 and diverges, and then converted into a parallel beam by the collimator lens 28. The laser beam 15 emitted from the modulation optical system 25 is reflected by the mirror 31 and guided horizontally and in parallel on the moving optical table 32.

  The moving optical table 32 includes a beam expander 33 and an objective lens 34. The laser light 15 guided to the moving optical table 32 is shaped into a desired beam shape by the beam expander 33 and then irradiated to the resist layer on the master 12 through the objective lens 34. The master 12 is placed on a turntable 36 connected to a spindle motor 35. The resist layer is exposed by intermittently irradiating the resist layer with the laser beam 15 while rotating the master 12 and moving the laser beam 15 in the height direction of the master 12. The formed latent image has, for example, a substantially elliptical shape having a major axis in the circumferential direction. The laser beam 15 is moved by moving the moving optical table 32 in the arrow R direction.

  The exposure apparatus includes a control mechanism 37 for forming a latent image corresponding to the two-dimensional pattern of the hexagonal lattice or the quasi-hexagonal lattice shown in FIG. 1B on the resist layer. The control mechanism 37 includes a formatter 29 and a driver 30. The formatter 29 includes a polarity reversal unit, and this polarity reversal unit controls the irradiation timing of the laser beam 15 on the resist layer. The driver 30 receives the output from the polarity inversion unit and controls the acoustooptic device 27.

  In this exposure apparatus, a signal is generated by synchronizing the polarity inversion formatter signal and the rotation controller of the recording apparatus for each track so that the two-dimensional pattern is spatially linked, and the intensity is modulated by the acoustooptic device 27. . A hexagonal lattice pattern or a quasi-hexagonal lattice pattern can be recorded on the resist layer by patterning with a constant angular velocity (CAV) and an appropriate rotation speed, an appropriate modulation frequency, and an appropriate feed pitch.

[Configuration of etching apparatus]
FIG. 5 is a schematic view showing an example of the configuration of an etching apparatus for producing a master having the above-described configuration. The etching apparatus is a so-called RIE (Reactive Ion Etching) apparatus. As shown in FIG. 5, an etching reaction tank 41, a cylindrical electrode 42 serving as a cathode (cathode), and a counter electrode 43 serving as an anode (anode). Prepare. The cylindrical electrode 42 is disposed in the center of the etching reaction tank 41. A counter electrode 43 is provided inside the etching reaction tank 41. The columnar electrode 42 has a configuration in which the cylindrical master 12 can be attached and detached. The columnar electrode 42 has, for example, a columnar surface that is substantially the same or similar to the cylindrical surface of the cylindrical master 12, specifically, a columnar surface having a slightly smaller diameter than the inner peripheral surface of the cylindrical master 12. The cylindrical electrode 43 is connected to a high frequency power supply (RF) 45 of 13.56 MHz, for example, via a blocking capacitor 44. The counter electrode 43 is connected to the ground.

  In the etching apparatus having the above-described configuration, when a high frequency voltage is applied between the counter electrode 43 and the cylindrical electrode 42 by the high frequency power supply 45, plasma is generated between the counter electrode 43 and the cylindrical electrode 42. Since the counter electrode 43 is connected to the ground, the potential does not change. On the other hand, the cylindrical electrode 42 has a negative potential because the circuit is blocked by the blocking capacitor 44, and a voltage drop occurs. Due to this voltage drop, an electric field is generated in a direction perpendicular to the cylindrical surface of the cylindrical electrode 42, and positive ions in the plasma are incident perpendicularly to the outer peripheral surface of the cylindrical master 12 and anisotropic etching is performed.

[Method for Manufacturing Optical Element]
With reference to FIGS. 6-7, the manufacturing method of the optical element which concerns on the 1st Embodiment of this invention is demonstrated.

The method for manufacturing an optical element according to the first embodiment is a method in which an optical disc master production process and an etching process are combined. The manufacturing method includes a resist film forming step for forming a resist layer on the master, an exposure step for forming a latent image on the resist layer using an exposure apparatus, a developing step for developing the resist layer on which the latent image is formed, An etching process for manufacturing a master by etching and a replication process for manufacturing a replication substrate by an ultraviolet curable resin are provided.
Hereafter, each process of the manufacturing method of the optical element which concerns on the 1st Embodiment of this invention is demonstrated sequentially.

(Resist film formation process)
First, as shown in FIG. 6A, a cylindrical master 12 is prepared. The master 12 is, for example, a glass master. Next, as shown in FIG. 6B, an inorganic resist layer 14 is formed on the outer peripheral surface of the cylindrical master 12 by sputtering. As the inorganic resist, for example, a metal oxide made of one or more transition metals such as tungsten and molybdenum can be used.

(Exposure process)
Next, as shown in FIG. 6C, the master 12 is rotated and the inorganic resist layer 14 is irradiated with a laser beam (exposure beam) 15 using the exposure apparatus shown in FIG. At this time, the inorganic resist layer 14 is exposed over the entire surface by intermittently irradiating the laser beam 15 while moving the laser beam 15 in the height direction of the master 12. Thereby, the latent image 16 according to the locus of the laser beam 15 is formed over the entire surface of the inorganic resist layer 14 at a pitch similar to the visible light wavelength, for example.

(Development process)
Next, while rotating the master 12, a developer is dropped on the inorganic resist layer 14 to develop the inorganic resist layer 14 as shown in FIG. 7A. When the inorganic resist layer 14 is formed of a positive resist, the exposed portion exposed with the laser beam 15 has a higher dissolution rate in the developer than the non-exposed portion. Therefore, as shown in FIG. A pattern corresponding to the image (exposed portion) 16 is formed on the inorganic resist layer 14.

(Etching process)
Next, using the etching apparatus shown in FIG. 5, the surface of the master 12 is etched using the pattern (resist pattern) of the inorganic resist layer 14 formed on the master 12 as a mask. As a result, as shown in FIG. 7B, for example, an elliptical cone-shaped or elliptical truncated cone-shaped recess having the major axis direction in the track extending direction, that is, the structure 13 can be obtained.

Moreover, you may make it perform an etching process and an ashing process alternately as needed. By doing in this way, the structure 13 which has a various curved surface can be formed. For example, by alternately repeating ashing and etching, and gradually increasing the etching time, the shape of the structure 3 can be changed to an elliptical cone having a gentle slope at the top and a gradually steep slope from the center to the bottom. It can be shaped. In addition, a glass master having a depth three times or more (selection ratio 3 or more) of the inorganic resist layer 14 can be produced, and the structure 3 can have a high aspect ratio.
Thus, the master 11 having a hexagonal lattice pattern or a quasi-hexagonal lattice pattern is obtained.

(Replication process)
Next, the master 11 and the substrate 2 such as an acrylic sheet coated with an ultraviolet curable resin are brought into close contact with each other, irradiated with ultraviolet rays to cure the ultraviolet curable resin, and then the substrate 2 is peeled from the master 11. Thereby, as shown in FIG. 7C, the target optical element 1 is manufactured.

  According to the first embodiment, since the inorganic resist layer 14 is formed by the sputtering method, a smooth inorganic resist film having a uniform film thickness can be formed on the surface of the cylindrical master 12. In addition, since the cylindrical master 12 is disposed on the column electrode 42 and reactive ion etching is performed, positive ions can be incident on the outer peripheral surface of the cylindrical master 12 perpendicularly to perform anisotropic etching. As described above, an uneven pattern having a uniform depth and width can be formed on the master 12 having a cylindrical surface.

  Further, when the optical element 1 is manufactured by using a method in which an optical disk master production process and an etching process are combined, the master disk production process is performed as compared with the case where the optical element 1 is produced using electron beam exposure. The time required (exposure time) can be greatly reduced. Therefore, the productivity of the optical element 1 can be greatly improved.

  Further, when the shape of the top of the structure 3 is not sharp but smooth, for example, a smooth curved surface protruding in the height direction, the durability of the optical element 1 can be improved. Moreover, the peelability of the optical element 1 with respect to the master 11 can also be improved.

  In the process of forming an organic resist film by a general spin coating method, when the master has a curved surface (cylindrical or spherical), uneven coating occurs, and it is difficult to form a smooth resist film with a uniform film thickness. It is. Therefore, it is difficult to form an uneven pattern having a uniform depth and width on the curved master surface. In contrast, in the first embodiment, since the inorganic resist layer 14 is formed by sputtering, a smooth inorganic resist film having a uniform film thickness can be formed on the surface of the cylindrical master 12. Therefore, an uneven pattern having a uniform depth and width can be formed on the curved master surface.

  Further, by applying the above-described manufacturing method, it is possible to form a concavo-convex pattern having a uniform depth and width in addition to a master having a curved surface such as a cylinder or a sphere. For example, an uneven pattern having a uniform depth and width can be formed on a master such as a sheet, tape, bar, needle, rectangular parallelepiped (box), wire frame, or cylinder. Moreover, the uneven | corrugated pattern which has a uniform depth and width | variety can be formed also in the inside of the hollow base | substrate which has a rectangular parallelepiped shape, and the hollow original disk which has a cylindrical shape.

<2. Second Embodiment>
FIG. 8 is a schematic view showing an example of the configuration of an exposure apparatus used for manufacturing an optical element according to the second embodiment of the present invention. As shown in FIG. 8, the second embodiment is different from the first embodiment in that exposure is performed with a cylindrical master 12 placed sideways.

  This exposure apparatus includes a turntable 60, a spindle servo 61, a laser light source 51 (266 nm), a mirror M1 and a mirror M2, a drive circuit (driver) 58, a moving optical table 53, a voltage frequency controller 57, an air slider (not shown). ), A feed servo (not shown), and a focus servo (not shown) of a detachment method (Skew Method) are provided as its main parts.

  The laser light source 51 is a light source for exposing a resist deposited on the surface of a cylindrical master 12 as a recording medium, and oscillates a recording laser beam 52 having a wavelength λ = 266 nm, for example. However, the light source for exposure is not limited to such a laser light source 51 in particular. The laser light 52 emitted from the laser light source 51 travels straight as a parallel beam, is reflected by the mirror M1 and the mirror M2, changes its direction, and is guided to the moving optical table 53.

In the moving optical table 53, two wedge prisms 54 and one acousto-optic modulation deflector (AOM / AOD) 55 are arranged. The wedge prism 54 and the acousto-optic modulation deflector 55 are arranged so that the laser beam 52 and the grating surface incident as parallel beams satisfy the Bragg condition and the beam horizontal height does not change. As an acoustooptic element used for the acoustooptic modulation deflector 55, quartz (SiO ₂ ) is suitable.

  A predetermined signal is supplied from the drive circuit 58 to the acousto-optic modulation deflector 55. The drive circuit 58 is supplied with a high frequency signal from a voltage frequency controller (VCO) 57. A control signal is supplied to the voltage frequency controller 57. The acousto-optic modulation deflector 55 utilizes the fact that the first-order diffracted light intensity in Bragg diffraction is substantially proportional to the ultrasonic power, and modulates the ultrasonic power based on the recording signal to modulate the laser light 52. And a predetermined exposure pattern is formed. In order to realize Bragg diffraction, the Bragg condition; 2 d sin θ = nλ (where d: lattice spacing, λ: laser beam wavelength, θ: angle between laser beam and lattice plane, n: integer) The positional relationship and attitude of the acousto-optic modulation deflector 55 with respect to the optical axis of the laser beam 52 are set. The lattice interval d is changed by a control signal (signal for forming a wobble) from the voltage frequency controller 57, and is deflected (wobbled) by changing θ by the Bragg condition (2dsin θ = nλ).

  The laser light 52 modulated and deflected (wobbled) as described above is shaped into a desired beam shape by the beam expander 56, and then irradiated to the inorganic resist of the cylindrical master 12 by the mirror M3 and the objective lens 59. To form a latent image of the desired structure. The optical recording apparatus controls the number of rotations by a spindle servo, controls the feed of an air slider by a feed servo, controls the focal point by a focus servo, and performs exposure as shown in FIG.

<3. Third Embodiment>
FIG. 9 is a schematic view showing an example of the configuration of an exposure apparatus used for manufacturing an optical element according to the second embodiment of the present invention. As shown in FIG. 9, the third embodiment is different from the second embodiment in that an inorganic resist layer is formed on the inner peripheral surface of a cylindrical master 12 and this inorganic resist layer is exposed. Yes.

<4. Fourth Embodiment>
FIG. 10A is a schematic plan view showing an example of the configuration of an optical element according to the fourth embodiment of the present invention. FIG. 10B is an enlarged plan view showing a part of the optical element shown in FIG. 10A. 10C is a cross-sectional view taken along tracks T1, T3,... In FIG. 10D is a cross-sectional view taken along tracks T2, T4,... In FIG.

  The optical element 1 according to the fourth embodiment is different from that of the first embodiment in that the structure 3 forms a tetragonal lattice pattern or a quasi-tetragonal lattice pattern between adjacent three rows of tracks. ing. Here, unlike the regular tetragonal lattice pattern, the quasi-tetragonal lattice pattern means a distorted tetragonal lattice pattern that is stretched in the track extending direction (X-axis direction). When the structures 3 are periodically arranged in a tetragonal lattice pattern or a quasi-tetragonal lattice pattern, for example, the structures 3 are adjacent to each other in an orientation that is four-fold symmetric. Further, by further stretching and distorting the tetragonal lattice, it is possible to make it adjacent to the structure 3 of the same track, and in addition to the four-fold symmetric orientation, the packing density adjacent to two places in the same track direction is also increased. High placement is made.

  Between two adjacent tracks T, the structure 3 of the other track (for example, T2) is arranged at an intermediate position (position shifted by a half pitch) of the structures 3 arranged on one track (for example, T1). Yes. As a result, as shown in FIG. 10B, a tetragonal lattice pattern or a quasi-tetragonal lattice pattern in which the center of the structure 3 is located at each point of a1 to a4 between adjacent three rows of tracks (T1 to T3) is formed. The structure 3 is arranged on the surface.

  The height (depth) of the structure 3 is not particularly limited, and is appropriately set according to the wavelength region of light to be transmitted. For example, when visible light is transmitted, the height (depth) of the structure 3 is preferably 150 nm to 500 nm. The pitch P2 in the θ direction with respect to the track T is, for example, about 275 nm to 297 nm. The aspect ratio (height H / arrangement pitch P) of the structures 3 is, for example, about 0.54 to 1.13. Furthermore, the aspect ratios of the structures 3 are not limited to the same, and the structures 3 may be configured to have a certain height distribution.

  The arrangement pitch P1 of the structures 3 in the same track is preferably longer than the arrangement pitch P2 of the structures 3 between two adjacent tracks. Further, when the arrangement pitch of the structures 3 in the same track is P1, and the arrangement pitch of the structures 3 between two adjacent tracks is P2, the ratio P1 / P2 is 1.4 <P1 / P2 ≦ 1. It is preferable that the relationship 5 is satisfied. By setting the numerical value in such a range, the filling rate of the structures having an elliptical cone or an elliptical truncated cone shape can be improved, so that the antireflection characteristic can be improved.

  In the fourth embodiment, as in the first embodiment described above, the optical element 1 having excellent antireflection characteristics can be obtained.

<5. Fifth Embodiment>
[Configuration of optical element]
FIG. 11A is a schematic plan view showing an example of the configuration of an optical element according to the fifth embodiment of the present invention. FIG. 11B is an enlarged plan view showing a part of the optical element shown in FIG. 12A. 11C is a cross-sectional view taken along tracks T1, T3,... In FIG. 11D is a cross-sectional view taken along tracks T2, T4,... In FIG.

The optical element 1 according to the fifth embodiment is different from the first embodiment in that it has a spherical surface and the structure 3 is formed on the spherical surface. The spherical surface is, for example, a convex or concave spherical surface. The optical element 1 is, for example, a concave lens or a convex lens. In FIG. 11, the case where the optical element 1 has a concave spherical surface is shown as an example.
The optical element 1 according to the fifth embodiment is the same as the first embodiment except for the above.

[Master configuration]
FIG. 12 shows an example of the configuration of a master for producing an optical element having the above-described configuration. The master 11 according to the fifth embodiment is different from the first embodiment in that it has a spherical surface and the structure 13 is formed on the spherical surface. The spherical surface is, for example, a convex or concave spherical surface. In FIG. 12, the case where the master 11 has a convex spherical surface is shown as an example.
The master 11 according to the fifth embodiment is the same as the first embodiment except for the above.

[Configuration of exposure apparatus]
FIG. 13 is a schematic diagram showing an example of the configuration of an exposure apparatus for producing a master having the above-described configuration. The moving optical table 32 includes a beam expander 33, a mirror 38, and an objective lens 34. A position sensor (not shown) is provided at a position directly below the objective lens 34. By this position sensor, collision with the spherical surface of the master 12 is prevented. The laser beam 15 guided to the moving optical table 32 is shaped into a desired beam shape by the beam expander 33, and then passes through the mirror 38 and the objective lens 34 to the resist layer formed on the spherical surface of the master 12. Irradiated. The master 12 having a spherical surface is placed on a turntable 36 connected to a spindle motor 35. Then, while rotating the master 12 and moving the laser beam 15 in the rotational radius direction of the master 12, the resist layer on the master 12 is intermittently irradiated with the laser beam, whereby the resist layer exposure process is performed. . The laser beam 15 is moved by moving the moving optical table 32 in the arrow R direction.
The exposure apparatus according to the fifth embodiment is the same as the first embodiment except for the above.

[Configuration of etching apparatus]
FIG. 14 is a schematic diagram showing an example of the configuration of an etching apparatus for producing a master having the above-described configuration. In the etching reaction tank 41, a spherical electrode 46 and a counter electrode 47 facing the spherical electrode 46 are provided. The spherical electrode 46 has a spherical surface on the side facing the counter electrode 47, and the master 12 is placed on this spherical surface. The spherical electrode 46 is configured so that the spherical master 12 can be attached and detached. The spherical electrode 46 has, for example, a spherical surface that is substantially the same as or similar to the spherical surface of the spherical master 12.
The etching apparatus according to the fifth embodiment is the same as the first embodiment except for the above.

<6. Sixth Embodiment>
FIG. 15A is a schematic plan view showing an example of the configuration of an optical element according to the sixth embodiment of the present invention. FIG. 15B is an enlarged plan view showing a part of the optical element shown in FIG. 15A. 15C is a cross-sectional view taken along tracks T1, T3,... In FIG. 15D is a cross-sectional view taken along tracks T2, T4,... In FIG. FIG. 16 is an enlarged perspective view showing a part of the optical element shown in FIG.

The sixth embodiment is different from the first embodiment in that the structure 3 is inclined with respect to the substrate surface. The structure 3 may face two or more different directions with respect to the substrate surface. Specifically, the structure 3 may be formed obliquely in two or more different directions with a predetermined angle with respect to the normal direction of the substrate surface, for example. Moreover, the structure 3 may have a plurality of regions, and the direction of the structure may be different depending on each region.
The optical element according to the sixth embodiment is the same as the first embodiment except for the above.

[Master configuration]
FIG. 17 shows an example of the configuration of a master for producing an optical element having the above-described configuration. As shown in FIG. 17, the master 11 has a configuration in which a large number of structures 13 that are concave portions are arranged on the surface of a disk-shaped master 12. The structures 13 are periodically two-dimensionally arranged at a pitch equal to or less than the wavelength of light in the environment in which the optical element 1 is used, for example, the wavelength of visible light. The structure 13 is disposed on, for example, a concentric or spiral track.
The master according to the sixth embodiment is the same as the first embodiment except for the above.

[Configuration of exposure apparatus]
FIG. 18 is a schematic diagram showing an example of the configuration of an exposure apparatus for producing a master having the above-described configuration. The exposure apparatus according to the sixth embodiment is the same as that of the fifth embodiment. However, in the sixth embodiment, as shown in FIG. 18, a disk-shaped master 12 is placed on the turntable 36, and the inorganic resist on the master 12 is irradiated with laser light to perform exposure. Is called.

[Configuration of etching apparatus]
FIG. 19 is a schematic view showing an example of the configuration of an etching apparatus for producing a master having the above-described configuration. In the etching reaction tank 41, an uneven surface electrode 48 and a counter electrode 47 facing the uneven surface electrode 48 are provided. The uneven surface electrode 48 has an uneven surface on the side facing the counter electrode 47, and the master 12 is placed on the uneven surface.

In the etching apparatus having the above-described configuration, when a high frequency voltage is applied between the counter electrode 47 and the concavo-convex surface electrode 48 by the high frequency power supply 45, an electric field is generated in a direction corresponding to the concavo-convex surface of the concavo-convex surface electrode 48 due to a voltage drop. Occurs. The positive ions in the plasma are incident on the main surface of the disk-shaped master 12 in an oblique direction, and anisotropic etching is performed. Further, by appropriately adjusting the concavo-convex shape of the concavo-convex surface electrode 48, the master 12 can be anisotropically etched in two or more different directions using the concavo-convex surface of the concavo-convex surface electrode 48. In addition, by appropriately adjusting the concavo-convex shape of the concavo-convex surface electrode 48, it is possible to change the direction of anisotropic etching according to the surface area of the master 12 using the concavo-convex surface of the concavo-convex surface electrode 48. is there.
The etching apparatus according to the sixth embodiment is the same as the first embodiment except for the above.

[Method for Manufacturing Optical Element]
With reference to FIGS. 20-21, the manufacturing method of the optical element which concerns on the 6th Embodiment of this invention is demonstrated.

(Resist film formation process)
First, as shown in FIG. 20A, a disk-shaped master 12 is prepared. The master 12 is, for example, a glass master. Next, as shown in FIG. 20B, an inorganic resist layer 14 is formed on one main surface of the disk-shaped master 12 by sputtering. As the inorganic resist, for example, a metal oxide made of one or more transition metals such as tungsten and molybdenum can be used.

(Exposure process)
Next, as shown in FIG. 20C, the master 12 is rotated and the inorganic resist layer 14 is irradiated with a laser beam (exposure beam) 15 using the exposure apparatus shown in FIG. At this time, the inorganic resist layer 14 is exposed over the entire surface by intermittently irradiating the laser beam 15 while moving the laser beam 15 in the height direction of the master 12. Thereby, the latent image 16 according to the locus of the laser beam 15 is formed over the entire surface of the inorganic resist layer 14 at a pitch similar to the visible light wavelength, for example.

(Development process)
Next, while rotating the master 12, a developer is dropped on the inorganic resist layer 14 to develop the inorganic resist layer 14 as shown in FIG. 21A. When the inorganic resist layer 14 is formed of a positive resist, the exposed portion exposed with the laser beam 15 has a higher dissolution rate in the developer than the non-exposed portion. Therefore, as shown in FIG. A pattern corresponding to the image (exposed portion) 16 is formed on the inorganic resist layer 14.

(Etching process)
Next, using the etching apparatus shown in FIG. 19, the surface of the master 12 is etched using the pattern (resist pattern) of the inorganic resist layer 14 formed on the master 12 as a mask. As a result, as shown in FIG. 21B, a structure 13 is formed that is directed in various directions such as an oblique direction with respect to one main surface of the disk-shaped master 12. Moreover, you may make it perform an etching process and an ashing process alternately as needed. By doing in this way, the structure 13 which has a various curved surface can be formed.
As described above, the master 11 in which the structure 3 is formed in an oblique direction with respect to the substrate surface is obtained.

(Replication process)
Next, the master 11 and the substrate 2 such as an acrylic sheet coated with an ultraviolet curable resin are brought into close contact with each other, irradiated with ultraviolet rays to cure the ultraviolet curable resin, and then the substrate 2 is peeled from the master 11. Thereby, as shown in FIG. 21C, the target optical element 1 is produced.

<7. Seventh Embodiment>
FIG. 22A is a schematic plan view showing an example of the configuration of an optical element according to the seventh embodiment of the present invention. 22B is an enlarged plan view showing a part of the optical element shown in FIG. 22A. 19C is a cross-sectional view taken along tracks T1, T3,... In FIG. 22D is a cross-sectional view taken along tracks T2, T4,... In FIG. FIG. 23 is an enlarged perspective view showing a part of the optical element shown in FIG.

  The optical element 1 according to the seventh embodiment is different from that of the first embodiment in that a large number of structures 3 that are concave portions are arranged on the surface of the substrate. The shape of the structure 3 is a concave shape obtained by inverting the convex shape of the structure 3 in the first embodiment.

<8. Eighth Embodiment>
The eighth embodiment is different from the first embodiment in that an inorganic resist layer 14 is developed to form a concavo-convex pattern and is directly used as a master.

Specifically, an optical element is produced as follows.
First, the steps from the resist film formation step to the development step are performed in the same manner as in the first embodiment. Thereby, concave portions of a hexagonal lattice pattern or a quasi-hexagonal lattice pattern are formed in the inorganic resist layer 14. Next, the optical element 1 is manufactured as follows using the master 12 having such a pattern formed on the inorganic resist layer 14 as a master. That is, the master and the base 2 such as an acrylic sheet coated with an ultraviolet curable resin are brought into close contact with each other, and the ultraviolet curable resin is cured by irradiating ultraviolet rays, and then the base 2 is peeled off from the master 11.
The eighth embodiment is the same as the first embodiment except for the above.

  According to the eighth embodiment, a highly rigid inorganic resist layer 14 is formed on a master 12 such as a metal master or sheet by sputtering, and the inorganic resist layer 14 is exposed and developed to form an inorganic material. An uneven pattern is formed on the resist layer 14. Therefore, the master 12 having the uneven pattern of the inorganic resist layer 14 can be used directly as a stamper.

  On the other hand, when an organic resist is used, the organic resist is soft, and it is difficult to directly stamp and use a master having an uneven pattern of the organic resist. For this reason, after forming a conductive film layer on an organic resist master (uneven pattern), a nickel plating layer is formed by an electroplating method, and it is necessary to produce a stamper having an uneven pattern by peeling it off. Furthermore, it may be streamed to a predetermined size as required. Thus, when an organic resist is used, a complicated process is required until the stamper is completed.

<9. Ninth Embodiment>
[Configuration of liquid crystal display device]
FIG. 24 shows an example of the configuration of the liquid crystal display device according to the ninth embodiment of the present invention. As shown in FIG. 24, the liquid crystal display device includes a backlight 73 that emits light, and a liquid crystal panel 71 that displays an image by temporally and spatially modulating the light emitted from the backlight 73. Polarizers 71a and 71b are provided on both surfaces of the liquid crystal panel 71, respectively. The optical element 1 is provided on the polarizer 71 b provided on the display surface side of the liquid crystal panel 71. In the present invention, the polarizer 71b in which the optical element 1 is provided on one main surface is referred to as a polarizer 72 with an antireflection function. This polarizer 72 with an antireflection function is an example of an optical component with an antireflection function.
Hereinafter, the backlight 73, the liquid crystal panel 71, the polarizers 71a and 71b, and the optical element 1 constituting the liquid crystal display device will be sequentially described.

(Backlight)
As the backlight 73, for example, a direct backlight, an edge backlight, or a flat light source backlight can be used. The backlight 73 includes, for example, a light source, a reflecting plate, an optical film, and the like. Examples of the light source include a cold cathode fluorescent lamp (CCFL), a hot cathode fluorescent lamp (HCFL), organic electroluminescence (OEL), and inorganic electroluminescence (IEL). ) And a light emitting diode (LED).

(LCD panel)
Examples of the liquid crystal panel 71 include a twisted nematic (TN) mode, a super twisted nematic (STN) mode, a vertical alignment (VA) mode, and a horizontal alignment (In-Plane Switching: IPS). Mode, Optically Compensated Birefringence (OCB) mode, Ferroelectric Liquid Crystal (FLC) mode, Polymer Dispersed Liquid Crystal (PDLC) mode, Phase Transition Guest Host (Phase) A display mode such as Change Guest Host (PCGH) mode can be used.

(Polarizer)
For example, polarizers 71a and 71b are provided on both surfaces of the liquid crystal panel 71 so that their transmission axes are orthogonal to each other. The polarizers 71a and 71b allow only one of the orthogonal polarization components of incident light to pass through and shield the other by absorption. Examples of the polarizers 71a and 71b include hydrophilic polymer films such as polyvinyl alcohol films, partially formalized polyvinyl alcohol films, ethylene / vinyl acetate copolymer partially saponified films, iodine, dichroic dyes, and the like. Those obtained by adsorbing the dichroic material and uniaxially stretching can be used. It is preferable to provide protective layers such as a triacetyl cellulose (TAC) film on both surfaces of the polarizers 71a and 71b. When the protective layer is provided in this way, it is preferable that the base 2 of the optical element 1 also serves as the protective layer. This is because the polarizer 72 with an antireflection function can be thinned by adopting such a configuration.

(Optical element)
Since the optical element 1 is the same as that of any of the first to fourth, sixth, and seventh embodiments described above, description thereof is omitted.

  According to the ninth embodiment, since the optical element 1 is provided on the display surface of the liquid crystal display device, the antireflection function of the display surface of the liquid crystal display device can be improved. Therefore, the visibility of the liquid crystal display device can be improved.

<10. Tenth Embodiment>
[Configuration of liquid crystal display device]
FIG. 25 shows an example of the configuration of the liquid crystal display device according to the tenth embodiment of the present invention. As shown in FIG. 25, the liquid crystal display device includes a front member 74 on the front side of the liquid crystal panel 71, and the optical element 1 is disposed on at least one of the front surface of the liquid crystal panel 71, the front surface and the back surface of the front member 74. In the point provided, it differs from the thing of 9th Embodiment. FIG. 25 illustrates an example in which the optical element 1 is provided on the front surface of the liquid crystal panel 71 and all the front and back surfaces of the front member 74. For example, an air layer is formed between the liquid crystal panel 71 and the front member 74. Portions similar to those in the ninth embodiment described above are assigned the same reference numerals, and descriptions thereof are omitted. In the present invention, the front surface refers to the surface on the side to be the display surface, that is, the surface on the viewer side, and the back surface refers to the surface on the side opposite to the display surface.

  The front member 74 is a front panel or the like used for the purpose of mechanical, thermal, and weatherproof protection and design on the front surface (observer side) of the liquid crystal panel 71. The front member 74 has, for example, a sheet shape, a film shape, or a plate shape. Examples of the material of the front member 74 include glass, triacetyl cellulose (TAC), polyester (TPEE), polyethylene terephthalate (PET), polyimide (PI), polyamide (PA), aramid, polyethylene (PE), polyacrylate, Polyether sulfone, polysulfone, polypropylene (PP), diacetyl cellulose, polyvinyl chloride, acrylic resin (PMMA), polycarbonate (PC), and the like can be used, but the material is not particularly limited and is transparent. Any material having a property can be used.

  According to the tenth embodiment, the visibility of the liquid crystal display device can be improved as in the ninth embodiment.

  EXAMPLES Hereinafter, the present invention will be specifically described with reference to examples. However, the present invention is not limited to these examples.

Example 1
First, an inorganic resist layer made of an oxide of tungsten (W) and molybdenum (Mo) was formed on a disk-shaped quartz substrate by a sputtering method. Next, a latent image having a quasi-hexagonal lattice pattern was formed on the inorganic resist layer using the exposure apparatus shown in FIG. Thereafter, the resist layer was subjected to development processing to produce a resist pattern. A 2.38% tetramethylammonium hydroxide aqueous solution (Tokyo Ohka Kogyo Co., Ltd.) was used as the developer.

  Next, the process of etching the quartz substrate by RIE etching and the process of removing the resist pattern by ashing and widening the opening diameter were repeated. Etching was performed using an etching apparatus having an uneven surface electrode shown in FIG. By the above process, the quasi-hexagonal lattice pattern diameter on which the surface of the quartz substrate is exposed gradually increases while etching proceeds in an oblique direction with respect to the quartz substrate surface, and the resist pattern is used as a mask in other regions. Was not. As a result, a concave portion directed in an oblique direction with respect to the surface of the quartz substrate was formed. Finally, the resist pattern was completely removed by ashing. Thus, the target disk master was obtained.

  Next, an ultraviolet curable resin was applied on the manufactured disk master, and then an acrylic plate was adhered to the ultraviolet curable resin. Then, the ultraviolet curable resin was cured by irradiating ultraviolet rays, and peeled off from the disk master. Thus, the target optical element was obtained.

(Example 2)
A duplicate substrate was obtained in the same manner as in Example 1 except that the uneven shape of the uneven electrode of the etching apparatus was changed.

(Example 3)
First, a glass roll master having an outer diameter of 126 mm was prepared, and an inorganic resist layer made of an oxide of tungsten (W) and molybdenum (Mo) was formed on the surface of the glass roll master by a sputtering method. Next, the glass roll original disk as a recording medium was conveyed to the exposure apparatus shown in FIG. 4, and the inorganic resist layer was exposed. As a result, a latent image forming a quasi-hexagonal lattice pattern between the adjacent three rows of tracks was patterned on the resist while continuing in one spiral shape.

  Next, the inorganic resist layer on the glass roll master was subjected to development treatment, and the exposed portion of the resist was dissolved and developed. Specifically, an undeveloped glass roll master is placed on a turntable of a developing machine (not shown), and a developer is dropped on the surface of the glass roll master while rotating the entire turntable to develop the resist on the surface. . As a result, a resist glass master having a resist layer opened in a quasi-hexagonal lattice pattern was obtained. The developer used was 2.38% tetramethylammonium hydroxide aqueous solution (Tokyo Ohka Kogyo Co., Ltd.).

  Next, a process of etching the glass roll master by RIE etching and a process of removing the resist pattern by ashing and widening the opening diameter were repeated. Etching was performed using an etching apparatus having a cylindrical electrode shown in FIG. By the above process, the quasi-hexagonal lattice pattern diameter at which the surface of the glass roll master is exposed gradually expands while etching proceeds in the direction perpendicular to the surface of the glass roll master, and the resist pattern is used as a mask in other areas. It was not etched. Thereby, the recessed part which goes to a perpendicular direction with respect to the surface of a glass roll original recording was formed. Finally, the resist pattern was completely removed by ashing. Thus, the intended glass roll master was obtained.

  Next, the produced glass roll master and an acrylic sheet coated with an ultraviolet curable resin were brought into close contact with each other, and peeled while being cured by irradiation with ultraviolet rays to produce an optical element.

(Evaluation of shape)
The optical element produced as described above was observed with a scanning electron microscope (SEM). The result is shown in FIG.

From FIGS. 26A and 26B, it can be seen that the structure can be formed in an oblique direction with respect to the substrate by etching using the uneven electrode. Moreover, it turns out that the direction of a structure can be changed according to an area | region by adjusting the uneven | corrugated shape of an uneven surface electrode suitably.
FIG. 26C shows that a structure can be formed in a direction perpendicular to the substrate when etching is performed using a cylindrical electrode.

  As mentioned above, although embodiment of this invention was described concretely, this invention is not limited to the above-mentioned embodiment, The various deformation | transformation based on the technical idea of this invention is possible.

  For example, the configurations, shapes, numerical values, and the like given in the above-described embodiments are merely examples, and different configurations, shapes, numerical values, and the like may be used as necessary.

  The configurations of the above-described embodiments can be combined with each other without departing from the gist of the present invention.

  Moreover, although the above-mentioned embodiment demonstrated the example which applied this invention with respect to the original disk which has a curved surface (cylindrical shape, spherical shape), this invention is not limited to this example. For example, it is also possible to produce a master by forming a desired uneven pattern on a master, with a sheet, tape (both sides), a master having a bar shape or a needle shape.

  It is also possible to produce a desired concavo-convex pattern on the surface of a box (cuboid), a wire frame, a cylinder, the inside of a box, or the like. That is, an inorganic resist is formed by sputtering on the surface of a box (cuboid), a wire frame, a cylinder, or the inside of a box, thereby forming a smooth resist film with a uniform film thickness. Next, an uneven | corrugated pattern can be formed by exposing an inorganic resist film with a stepper, recording various patterns, and developing.

  In addition, a smooth inorganic resist film with a uniform thickness is formed on an oval sphere (rugby ball type), conical shape, master plate with many holes, master plate with concave portions, master plate with convex portions, etc., and exposure development By doing so, it is also possible to form a desired uneven pattern.

  Further, the present invention can also be applied to a substrate or device having a concavo-convex portion or a substrate or device having a wave or curved surface used for a display or the like.

  Moreover, in the above-mentioned embodiment, you may make it form uneven | corrugated shape in the surface of a cylindrical electrode and a spherical electrode. By doing in this way, a structure can be formed in an oblique direction with respect to the surface of the cylindrical master and the spherical master.

  In the above-described embodiment, the case where the electrodes of the optical element and the etching apparatus are a cylindrical surface and a spherical surface has been described as an example. However, the shapes of the electrodes of the optical element and the etching apparatus are not limited thereto. . As other curved surface shapes, for example, various curved surfaces such as hyperboloids, free-form surfaces, and ellipsoids can be used.

  In the above-described embodiment, the case where an optical element or the like is manufactured using an inorganic resist has been described. However, an organic resist can also be used.

DESCRIPTION OF SYMBOLS 1 Optical element 2 Base | substrate 3 Structure 11 Master 12 Master 13 Structure 14 Inorganic resist layer 15 Laser beam 16 Latent image 41 Etching reaction tank 42 Cylindrical electrode 43, 47 Counter electrode 44 Blocking capacitor 45 High frequency power supply 46 Spherical electrode 47 Counter electrode 48 Irregular surface electrode 71 Liquid crystal panel 71a, 71b Polarizer 72 Polarizer with antireflection function

Claims (9)

Forming a resist layer on the master,
Exposing and developing the resist layer formed on the master, and forming a pattern on the resist layer;
A master having a pattern formed on the resist layer is disposed on the concave and convex shape of the electrode, and using the concave and convex shape of the electrode, anisotropic etching is performed obliquely with respect to the surface of the master and the surface of the master is A process for producing a microfabricated body by forming a concavo-convex shape. The master has a curved surface,
The electrode has a curved surface that is substantially the same as or similar to the curved surface of the master,
The method for producing a microfabricated body according to claim 1, wherein the uneven shape of the electrode is formed on the curved surface of the electrode.   3. The method for manufacturing a finely processed body according to claim 2, wherein the master has a cylindrical shape or a spherical shape.   The method for manufacturing a microfabricated body according to claim 1, wherein in the etching step, the master is anisotropically etched in two or more different directions using the uneven shape of the electrode.   5. The method for manufacturing a microfabricated body according to claim 4, wherein, in the etching step, the direction of anisotropic etching is changed in accordance with the surface area of the master using the uneven shape of the electrode.   The method for producing a microfabricated body according to claim 1, wherein the resist layer is an inorganic resist layer.   The method for producing a microfabricated body according to claim 6, wherein in the film formation step of the inorganic resist layer, the inorganic resist layer is formed by a sputtering method.   The method for producing a microfabricated body according to claim 1, further comprising a step of producing a replica of the microfabricated body by transferring the uneven shape of the microfabricated body to a resin material after the process of producing the microfabricated body. An etching reaction tank;
A first electrode and a second electrode disposed opposite to each other in the etching reaction tank,
The first electrode has an uneven shape for arranging the master,
A master having a pattern formed on the resist layer is disposed on the uneven shape of the first electrode, and anisotropic etching is performed obliquely with respect to the surface of the master using the uneven shape of the first electrode. And an etching apparatus for producing a finely processed body by forming an uneven shape on the surface of the master.