JP2011001633A - Semiconductor manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing method where the using amount of an electroless plating liquid can be reduced, further, the influence of reaction by-products caused by plating reaction is suppressed, and a cap metal with a uniform film thickness can be formed in the plane of a substrate.SOLUTION: In the semiconductor manufacturing method, plating treatment is continuously performed to a plurality of substrates, a prescribed amount of plating liquid including a pH adjuster required for one substrate treatment is stored in a vessel for temperature control, the temperature of the plating liquid stored in the vessel for temperature control is controlled to a prescribed temperature in accordance with a plating film deposition rate required for plating treatment and the concentration of a pH adjustor comprised in the plating liquid, the substrates are held to prescribed positions one by one, and, at the timing in accordance with the plating film deposition rate required for plating treatment and the concentration of the pH adjustor comprised in the plating liquid, per held substrate, the whole quantity of the plating liquid stored in the vessel for temperature control and whose temperature is controlled is discharged to the treatment face of the held substrate.

Description

  The present invention relates to a semiconductor manufacturing method for performing liquid processing such as plating on a substrate or the like to be processed.

  In the design and manufacture of semiconductor devices, improvement of operation speed and further higher integration are aimed at. On the other hand, it has been pointed out that electromigration (EM) is likely to occur due to high-speed operation and increase in current density due to miniaturization of wiring, which causes disconnection of wiring. This causes a decrease in reliability. Therefore, Cu (copper), Ag (silver), or the like having a low specific resistance has been used as a material for wiring formed on a substrate of a semiconductor device. In particular, since the specific resistance of copper is as low as 1.8 μΩ · cm and high EM resistance can be expected, it is expected as an advantageous material for increasing the speed of semiconductor devices.

  In general, in order to form a Cu wiring on a substrate, a damascene method is used in which a via and a trench for embedding the wiring in an insulating film are formed by etching and the Cu wiring is embedded in them. Furthermore, a plating solution containing CoWB (cobalt / tungsten / boron) or CoWP (cobalt / tungsten / phosphorus) is supplied to the surface of the substrate having the Cu wiring, and a metal film called a cap metal is formed by electroless plating. Attempts have been made to improve the EM resistance of semiconductor devices by covering the Cu wiring (for example, Patent Document 1).

  The cap metal is formed by supplying an electroless plating solution to the surface of the substrate having Cu wiring. For example, a uniform liquid flow is formed on the substrate surface by fixing the substrate to the rotary holder and supplying the electroless plating solution while rotating the rotary holder. Thereby, a uniform cap metal can be formed in the whole substrate surface (for example, patent document 2).

  However, it is known that electroless plating greatly affects the metal deposition rate depending on the reaction conditions such as the composition of the plating solution and the temperature. In addition, by-products (residues) from the plating reaction are generated in a slurry state and stay on the substrate surface, the uniform plating solution flow is obstructed, and the deteriorated electroless plating solution is replaced with a new electroless plating solution. The problem of being unable to do so has also been pointed out. This makes it difficult to form a cap metal having a uniform film thickness within the substrate surface because the reaction conditions on the substrate are locally different. Further, a local hydrophilic region or a hydrophobic region is generated on the surface of the substrate to which the cap metal is applied due to the density of the formed wiring or the difference in surface material, and the electroless plating solution is supplied uniformly throughout the substrate. Therefore, there is a problem that a cap metal having a uniform film thickness cannot be formed in the substrate surface.

JP 2006-1111938 A JP 2001-073157 A

  Thus, in the conventional plating method, there is a problem that the electroless plating solution cannot be supplied uniformly over the entire substrate, and it is difficult to form a uniform film thickness within the substrate surface. On the other hand, when aiming at forming a uniform film thickness, it often leads to a decrease in throughput, and there is a problem that continuous processing is difficult.

  The present invention has been made to solve such a problem, and can reduce the amount of electroless plating solution used and suppress the influence of reaction by-products generated in the plating reaction within the plane of the substrate. It aims at providing the semiconductor manufacturing method which can form the cap metal which has a uniform film thickness.

  In order to achieve the above-described object, a semiconductor manufacturing method according to one aspect of the present invention is a semiconductor manufacturing method in which a plurality of substrates are continuously subjected to plating, and pH adjustment necessary for processing one substrate. A predetermined amount of plating solution containing an agent is stored in a temperature control container, and the plating solution stored in the temperature control container is selected according to the plating film formation rate necessary for the plating process and the concentration of the pH adjusting agent contained in the plating solution. Then, the substrate 1 is held at a predetermined position one by one, and the substrate 1 held at a timing according to the plating film forming speed necessary for the plating process and the concentration of the pH adjusting agent contained in the plating solution. It is characterized in that the entire amount of the plating solution accommodated in the temperature adjusting container is discharged for each substrate onto the processing surface of the held substrate.

  The semiconductor manufacturing method according to another aspect of the present invention is characterized in that the temperature of the plating solution contained in the temperature adjusting container is further adjusted based on the process time required for the plating process. In addition, the semiconductor manufacturing method according to another aspect of the present invention includes a substrate processing surface in which the total amount of the plating solution accommodated in the temperature adjusting container is held at a timing based on the process time required for the plating process. It is characterized by being discharged to.

  ADVANTAGE OF THE INVENTION According to this invention, the semiconductor manufacturing method which implement | achieves uniform film thickness formation within a substrate surface can be provided.

It is a top view which shows the structure of the semiconductor manufacturing apparatus of one Embodiment which concerns on this invention. It is sectional drawing which shows the electroless-plating unit in the semiconductor manufacturing apparatus of this embodiment. It is a top view which shows the electroless-plating unit in the semiconductor manufacturing apparatus of this embodiment. It is a schematic diagram which shows transparently the arm part of the electroless-plating unit in the semiconductor device of this embodiment. It is a schematic diagram which shows the structure of the 1st arm of this embodiment. It is a flowchart which shows operation | movement of the electroless-plating unit which concerns on this embodiment. It is a figure which shows the whole process of the electroless-plating unit which concerns on this embodiment. It is a figure which shows the process of the plating process of the electroless-plating unit which concerns on this embodiment. It is a figure which shows the relationship between the plating solution temperature with respect to heating time, and the plating film-forming speed | rate of the plating processing liquid prepared to a certain composition. It is a figure which shows the relationship between the plating solution temperature with respect to each heating time, and the plating film-forming speed | rate about several plating processing liquids from which the composition of TMAH used as a pH adjuster mutually differs. It is a figure which shows a mode that the metal-plating process process shown in FIG. It is a figure which shows a mode that the metal-plating process process shown in FIG.

  A general electroless plating process includes steps of pre-cleaning, plating, post-cleaning, back / end surface cleaning, and drying. Here, the pre-cleaning is a process of hydrophilizing the wafer to be processed. The plating process is a process of performing a plating process by supplying a plating solution onto the wafer. Post-cleaning is a step of removing residues generated by the plating deposition reaction. The back surface / end surface cleaning is a step of removing residues associated with the plating process on the back surface and end surface of the wafer. Drying is a process of drying the wafer. Each of these steps is realized by combining the rotation of the wafer and the supply of a cleaning solution or a plating solution onto the wafer.

  By the way, in the plating process step of supplying a processing solution such as a plating solution onto the substrate, the film thickness of the film (plating processing film) generated by the plating process becomes uneven due to uneven supply of the processing solution. Sometimes. In particular, when the size of the substrate to be processed is large, the non-uniformity of the film thickness becomes significant. The semiconductor manufacturing apparatus according to the embodiment of the present invention improves the throughput by improving the problem of film thickness unevenness / variation particularly in the plating process among the steps of the electroless plating process.

  Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 is a plan view showing a configuration of a semiconductor manufacturing apparatus according to one embodiment of the present invention, FIG. 2 is a cross-sectional view showing an electroless plating unit of the semiconductor manufacturing apparatus of this embodiment, and FIG. 3 is also an electroless plating unit. FIG. 4 is a schematic view transparently showing an arm portion for supplying a plating solution in the electroless plating unit.

  As shown in FIG. 1, the semiconductor manufacturing apparatus of this embodiment includes a carry-out unit 1, a processing unit 2, a transport unit 3, and a control device 5.

  The carry-out unit 1 is a mechanism for carrying a plurality of substrates W in and out of the semiconductor manufacturing apparatus via a FOUP (FOUP: Front Opening Unified Pod) F. As shown in FIG. 1, the entrance / exit part 1 is formed with three entrance / exit ports 4 arranged in the Y direction along the front of the apparatus (side surface in the X direction in FIG. 1). The entrance / exit ports 4 each have a mounting table 6 on which the hoop F is mounted. A partition wall 7 is formed on the back surface of the entrance / exit port 4. In the partition wall 7, a window 7 </ b> A corresponding to the hoop F is formed above the mounting table 6. Each of the windows 7A is provided with an opener 8 for opening and closing the lid of the hoop F, and the lid of the hoop F is opened and closed via the opener 8.

  The processing unit 2 is a processing unit group that executes each process described above on the substrate W one by one. The processing unit 2 includes a transfer unit (TRS) 10 that transfers the substrate W to and from the transport unit 3, an electroless plating unit (PW) 11 that performs electroless plating and pre- and post-processing on the substrate W, and plating A heating unit (HP) 12 that heats the substrate W before and after processing, a cooling unit (COL) 13 that cools the substrate W heated by the heating unit 12, and a substantially central portion of the processing unit 2 surrounded by these unit groups. And a second substrate transport mechanism 14 that moves the substrate W between the units.

  The delivery unit 10 has, for example, a substrate delivery part (not shown) formed in two upper and lower stages. For example, the upper and lower substrate transfer units are used for temporarily placing the substrate W loaded from the entrance / exit port 4 in the lower stage and temporarily placing the substrate W carried out to the entrance / exit port 4 in the upper stage. Can be used for different purposes.

  Two heating units 12 are arranged at positions adjacent to the delivery unit 10 in the Y direction. The heating unit 12 includes, for example, heating plates that are arranged in four upper and lower stages. Two cooling units 13 are arranged at positions adjacent to the second substrate transport mechanism 14 in the Y direction. The cooling unit 13 has cooling plates formed, for example, in four upper and lower stages. Two electroless plating units 11 are arranged along the cooling unit 13 and the second substrate transport mechanism 14 arranged at positions adjacent to each other in the Y direction.

  The second substrate transport mechanism 14 has, for example, two stages of transport arms 14 </ b> A in the vertical direction. The upper and lower transfer arms 14A can be moved up and down in the vertical direction, and can be turned in the horizontal direction. Thereby, the second substrate transport mechanism 14 transports the substrate W between the delivery unit 10, the electroless plating unit 11, the heating unit 12, and the cooling unit 13 via the transport arm 14A.

  The transport unit 3 is a transport mechanism that is positioned between the carry-in / out unit 1 and the processing unit 2 and transports the substrates W one by one. The transport unit 3 is provided with a first substrate transport mechanism 9 that transports the substrates W one by one. The substrate transport mechanism 9 has, for example, two upper and lower transport arms 9 </ b> A that can move in the Y direction, and transfers the substrate W between the loading / unloading unit 1 and the processing unit 2. Similarly, the transfer arm 9A is configured to be able to move up and down in the vertical direction and to turn in the horizontal direction. Accordingly, the first substrate transport mechanism 9 transports the substrate W between the arbitrary FOUP F and the processing unit 2 via the transport arm 9A.

  The control device 5 includes a process controller 51 having a microprocessor, a user interface 52 connected to the process controller 51, and a storage unit 53 that stores a computer program that defines the operation of the semiconductor manufacturing apparatus according to this embodiment. The processing unit 2 and the transport unit 3 are controlled. The control device 5 is connected online to a host computer (not shown) and controls the semiconductor manufacturing apparatus based on a command from the host computer. The user interface 52 is an interface including, for example, a keyboard and a display, and the storage unit 53 includes, for example, a CD-ROM, a hard disk, a nonvolatile memory, and the like.

  Here, the operation of the semiconductor manufacturing apparatus 1 according to this embodiment will be described. The substrate W to be processed is stored in the FOUP F in advance. First, the first substrate transport mechanism 9 takes out the substrate W from the FOUP F through the window 7 </ b> A and transports it to the delivery unit 10. When the substrate W is transported to the delivery unit 10, the second substrate transport mechanism 14 transports the substrate W from the delivery unit 10 to the hot plate of the heating unit 12 using the transport arm 14 </ b> A.

  The heating unit 12 heats (pre-bakes) the substrate W to a predetermined temperature to remove organic substances attached to the surface of the substrate W. After the heat treatment, the second substrate transport mechanism 14 transports the substrate W from the heating unit 12 to the cooling unit 13. The cooling unit 13 cools the substrate W.

  When the cooling process is finished, the second substrate transport mechanism 14 transports the substrate W to the electroless plating unit 11 using the transport arm 14A. The electroless plating unit 11 performs an electroless plating process on the wiring formed on the surface of the substrate W.

  When the electroless plating process or the like is finished, the second substrate transport mechanism 14 transports the substrate W from the electroless plating unit 11 to the hot plate of the heating unit 12. The heating unit 12 performs a post-bake process on the substrate W to remove organic substances contained in plating (cap metal) by electroless plating and to improve the adhesion between the wiring and the plating. When the post-baking process ends, the second substrate transport mechanism 14 transports the substrate W from the heating unit 12 to the cooling unit 13. The cooling unit 13 cools the substrate W again.

  When the cooling process is finished, the second substrate transport mechanism 14 transports the substrate W to the delivery unit 10. Thereafter, the first substrate transport mechanism 9 returns the substrate W placed on the delivery unit 10 to a predetermined location of the FOUP F using the transport arm 9A.

  Thereafter, such a flow is performed on a plurality of substrates to perform continuous processing. Note that, as an initial state, a dummy wafer may be processed in advance, and processing for promoting a stable state of the process state of each unit may be performed. Thereby, the reproducibility of the process processing can be improved.

  Next, the electroless plating unit 11 in the semiconductor manufacturing apparatus of this embodiment will be described in detail with reference to FIGS. As shown in FIG. 2, the electroless plating unit 11 (hereinafter also referred to as “plating unit 11”) includes an outer chamber 110, an inner chamber 120, a spin chuck 130, and first and second fluid supply units 140. -150, the gas supply part 160, and the back plate 165 are provided.

  The outer chamber 110 is a processing container that is disposed in the housing 100 and executes a plating process. The outer chamber 110 is formed in a cylindrical shape surrounding the storage position of the substrate W, and is fixed to the bottom surface of the housing 100. A window 115 for carrying in and out the substrate W is provided on the side surface of the outer chamber 110 and can be opened and closed by a shutter mechanism 116. In addition, a shutter mechanism 119 for operating the first and second fluid supply units 140 and 150 is formed to be openable and closable on the side surface of the outer chamber 110 facing the side on which the window 115 is formed. A gas supply unit 160 is provided on the upper surface of the outer chamber 110. At the lower part of the outer chamber 110, a drain remover 118 for escaping gas, processing liquid and the like is provided.

  The inner chamber 120 is a container that receives the processing liquid scattered from the substrate W, and is disposed in the outer chamber 110. The inner chamber 120 is formed in a cylindrical shape at a position between the outer chamber 110 and the storage position of the substrate W, and includes a drain drain 124 for exhaust and drainage. The inner chamber 120 can be moved up and down inside the outer chamber 110 using a lifting mechanism (not shown) such as a gas cylinder, for example, and the end of the upper end 122 is slightly higher than the storage position of the substrate W (processing position). ) And a position (retreat position) below the processing position. Here, the processing position is a position when electroless plating is performed on the substrate W, and the retreat position is a position when carrying in / out the substrate W, cleaning the substrate W, or the like.

  The spin chuck 130 is a substrate fixing mechanism that holds the substrate W substantially horizontally. The spin chuck 130 includes a rotating cylinder 131, an annular rotating plate 132 that extends horizontally from the upper end of the rotating cylinder 131, and an outer peripheral portion of a substrate W that is provided at equal intervals in the circumferential direction on the outer peripheral end of the rotating plate 132. And a plurality of pressing pins 134b for pressing the outer peripheral surface of the substrate W. As shown in FIG. 3, the support pins 134 a and the pressing pins 134 b are shifted from each other in the circumferential direction, for example, three each. The support pin 134a is a fixture that holds the substrate W and fixes the substrate W at a predetermined accommodation position, and the pressing pin 134b is a pressing mechanism that presses the substrate W downward. A motor 135 is provided on the side of the rotating cylinder 131, and an endless belt 136 is wound around the driving shaft of the motor 135 and the rotating cylinder 131. That is, the rotating cylinder 131 is configured to rotate by the motor 135. The support pins 134a and the pressing pins 134b rotate in the horizontal direction (the surface direction of the substrate W), and the substrate W held by these also rotates in the horizontal direction.

  The gas supply unit 160 supplies nitrogen gas or clean air into the outer chamber 110 to dry the substrate W. The supplied nitrogen gas and clean air are collected through a drainer 118 or 124 provided at the lower end of the outer chamber 110.

  The back plate 165 faces the lower surface of the substrate W held by the spin chuck 130 and is disposed between the holding position of the substrate W by the spin chuck 130 and the rotating plate 132. The back plate 165 incorporates a heater and is connected to a shaft 170 that passes through the axis of the rotating cylinder 131. In the back plate 165, flow paths 166 that open at a plurality of positions on the surface are formed, and the flow path 166 communicates with a fluid supply path 171 that passes through the axis of the shaft 170. A heat exchanger 175 is disposed in the fluid supply path 171. The heat exchanger 175 adjusts a processing fluid such as pure water or dry gas to a predetermined temperature. In other words, the back plate 165 serves to supply the processing fluid whose temperature has been adjusted toward the lower surface of the substrate W. An elevating mechanism 185 such as an air cylinder is connected to the lower end portion of the shaft 170 via a connecting member 180. That is, the back plate 165 is configured to move up and down between the substrate W held by the spin chuck 130 and the rotating plate 132 by the lifting mechanism 185 and the shaft 170.

  As shown in FIG. 3, the first and second fluid supply units 140 and 150 supply the processing liquid to the upper surface of the substrate W held by the spin chuck 130. The first and second fluid supply units 140 and 150 include a fluid supply device 200 that stores a fluid such as a processing liquid, and a nozzle driving device 205 that drives a supply nozzle. The first and second fluid supply units 140 and 150 are arranged so as to sandwich the outer chamber 110 in the housing 100.

  The first fluid supply unit 140 includes a first pipe 141 connected to the fluid supply apparatus 200, a first arm 142 that supports the first pipe 141, and a base of the first arm 142. And a first turning drive mechanism 143 for turning the first arm 142 about the base portion using a motor or the like. The first fluid supply unit 140 has a function of supplying a processing fluid such as an electroless plating solution. The first pipe 141 includes pipes 141 a, 141 b, and 141 c that individually supply three types of fluids, and are connected to the nozzles 144 a, 144 b, and 144 c at the tip of the first arm 142, respectively. Of these, the treatment liquid and pure water are supplied from the nozzle 144a in the pre-cleaning step described above, the treatment liquid and pure water are supplied from the nozzle 144b in the post-cleaning step, and the plating solution is supplied from the nozzle 144c in the plating treatment step. .

  Similarly, the second fluid supply unit 150 includes a second pipe 151 connected to the fluid supply apparatus 200, a second arm 152 that supports the second pipe 151, and a base of the second arm 152. And a second turning drive mechanism 153 for turning the second arm 152. The second pipe 151 is connected to the nozzle 154 at the tip of the second arm 152. The second fluid supply unit 150 has a function of supplying a processing fluid for processing the outer peripheral portion (peripheral portion) of the substrate W. The first and second arms 142 and 152 rotate above the substrate W held by the spin chuck 130 via a shutter mechanism 119 provided in the outer chamber 110.

  Here, the fluid supply apparatus 200 will be described in detail with reference to FIG. The fluid supply device 200 supplies a processing fluid to the first and second fluid supply units 140 and 150. As shown in FIG. 4, the fluid supply apparatus 200 includes a first tank 210, a second tank 220, a third tank 230, and a fourth tank 240.

  The first tank 210 stores a pre-cleaning treatment liquid L1 that is used for a pretreatment of the electroless plating treatment of the substrate W. Further, the second tank 220 stores a post-cleaning treatment liquid L2 used for post-treatment of the electroless plating treatment of the substrate W. Each of the first and second tanks 210 and 220 includes a temperature adjusting mechanism (not shown) that adjusts the processing liquids L1 and L2 to a predetermined temperature, and includes a pipe 211 and a pipe 211 connected to the first pipe 141a. A pipe 221 connected to the second pipe 141b is connected. The pipes 211 and 221 are respectively provided with pumps 212 and 222 and valves 213 and 223, and the processing liquids L1 and L2 adjusted to a predetermined temperature are respectively supplied to the first pipe 141a and the second pipe 141b. It is comprised so that it may be supplied to. That is, by operating the pumps 212 and 222 and the valves 213 and 223, respectively, the processing liquids L1 and L2 are sent out to the nozzle 144a and the nozzle 144b through the first pipe 141a and the second pipe 141b.

  The third tank 230 stores a plating solution L3 for processing the substrate W. The third tank 230 is connected to a pipe 231 connected to the first pipe 141c. The pipe 231 is provided with a pump 232, a valve 233, and a heater (for example, a heat exchanger) 234 for heating the plating solution L3. That is, the temperature of the plating solution L3 is adjusted by the heater 234, and is sent out to the nozzle 144c through the first pipe 141c by the cooperative operation of the pump 232 and the valve 233. The pump 232 only needs to function as a delivery mechanism for delivering the plating solution L3, such as a pressurizing mechanism or a pressure feeding mechanism.

  The fourth tank 240 stores the outer peripheral processing liquid L4 used for processing the outer peripheral portion of the substrate W. A pipe 241 connected to the second pipe 151 is connected to the fourth tank 240. The pipe 241 is provided with a pump 242 and a valve 243. That is, the outer peripheral portion processing liquid L4 is sent to the nozzle 154 through the second pipe 151 by the cooperative operation of the pump 242 and the valve 243.

  For example, a pipe for supplying hydrofluoric acid, a pipe for supplying hydrogen peroxide, and a pipe for supplying pure water L0 are also connected to the fourth tank 240. That is, the fourth tank 240 also has an action of mixing and adjusting these liquids at a predetermined ratio set in advance.

  The first pipe 141a and the second pipe 141b are connected to pipes 265a and 265b for supplying pure water L0, the valve 265a is provided with a valve 260a, and the pipe 265b is provided with a valve 260b. ing. That is, the nozzles 144a and 144b can also supply pure L0.

  Here, the first arm 142 of the first fluid supply unit 140 will be described in detail with reference to FIG. FIG. 5 is a schematic diagram showing the configuration of the first arm 142. As shown in FIG. 5, the first arm 142 includes a temperature regulator 145, a pump mechanism 146 having a supply mechanism 146 a, a suck back mechanism 146 b, and a coupling mechanism 146 c, and a heat insulator 147. That is, in the plating unit 11 according to this embodiment, the heater 234 shown in FIG. 4 is configured by a temperature controller 145 and a heat insulator 147 disposed on the first arm 142.

  The temperature controller 145 is a heater mechanism that heats the plating processing solution or the like to a temperature suitable for the processing. The temperature regulator 145 has a fluid supply port 451 through which a pipe 141c passes through a sealed casing and introduces a temperature adjustment fluid (for example, hot water) supplied from the temperature adjustment fluid supply 450, Similarly, a fluid discharge port 452 for discharging the fluid is provided. The fluid supplied from the fluid supply port 451 flows through the space 453 inside the housing, contacts the pipe 141c, warms the plating solution flowing through the pipe 141c, and is discharged from the fluid discharge port 452. The pipe 141c in the temperature controller 145 is preferably formed in a spiral shape, for example, and preferably has a large contact area with the temperature adjusting fluid. The temperature to be heated can be adjusted depending on the components of the plating solution, film forming conditions, and the like, and is, for example, about 20 to 90 ° C.

  The supply mechanism 146a includes the pump 232 and the valve 233 described above, and functions as a delivery mechanism that sends the plating solution L3 stored in the third tank 230 to the nozzle 144c through the pipe 141c. In the example shown in FIGS. 4 and 5, the plating solution is sent out by the pump 232 and the valve 233 as the delivery mechanism, but is not limited to this. The pump 232 may be realized by a pressurizing mechanism such as a diafuran pump or a pumping mechanism. The suction back mechanism 146b has a function of sucking back the plating solution remaining at the tip of the nozzle 144c immediately after the supply of the plating solution to the substrate processing surface is completed. The coupling mechanism 146c couples the pipe from the supply mechanism 146a, the pipe to the suck back mechanism 146b, and the pipe that continues to the temperature controller 145. The coupling mechanism 146c may be realized integrally with the valve 233 or may be realized separately. The supply mechanism 146a sends a predetermined amount of processing liquid toward the nozzle 144c at a predetermined speed and timing based on the processing liquid supply instruction from the process controller 51.

  The warmer 147 is disposed between the temperature controller 145 and the nozzle 144c, and has a function of maintaining the temperature of the plating treatment liquid heated by the temperature regulator 145 until the plating treatment liquid is delivered from the nozzle 144c. Have. The heat retaining device 147 has a fluid supply port through which a pipe 141c penetrates inside a sealed casing and introduces a temperature adjusting fluid sent from the temperature adjusting fluid supply 450 independently of the temperature adjuster 145. 471 and a fluid outlet 472 for discharging the fluid. The fluid sent from the temperature adjusting fluid supply 450 may be the same as the fluid supplied to the temperature adjuster 145 or may be a separate and independent fluid. Inside the warmer 147, the heat retaining pipe 473 connected to the fluid supply port 471 is in contact with the pipe 141c, and the plating solution in the pipe 141c is maintained at a predetermined temperature. The heat retaining pipe 473 extends along the pipe 141c of the heat retaining device 147 to the immediate vicinity of the nozzle 144c, and is configured to be able to retain the processing liquid immediately before the processing liquid is sent out from the nozzle 144c. The heat retaining pipe 473 is opened inside the nozzle housing 440 that houses the nozzle 144c, and communicates with the space 474 in the heat retaining device 147. That is, the warmer 147 is a triple consisting of a pipe 141c located at the center of the cross section, a heat retaining pipe 473 disposed in thermal contact with the outer periphery of the pipe 141c, and a space 474 located on the outer circumference of the heat retaining pipe 473. It has a structure (triple pipe structure). The heat retaining fluid supplied from the fluid supply port 471 passes through the heat retaining pipe 473 until reaching the nozzle housing 440, and flows through the space 474 in the heat retaining device 147 to be discharged from the fluid discharge port 472. Is done. The fluid flowing through the space 474 acts to thermally shut off the fluid flowing through the heat retaining pipe 473 (and the plating solution flowing through the piping 141c inside the heat retaining pipe 473) and the atmosphere outside the heat retainer 147. Therefore, heat loss of the fluid flowing through the heat retaining pipe 473 can be suppressed, and heat transfer from the fluid flowing through the heat retaining pipe 473 to the plating solution flowing through the pipe 141c can be efficiently performed. Since the warmer 147 is provided in the first arm 142 driven by the nozzle driving device 205, it is desirable that the warmer 147 be a housing that can handle movement such as a bellows shape. The temperature adjusting fluid (hot water) supplied to 471 may be the same as the fluid supplied to 451, or may be another fluid having a temperature difference.

  The portion of the pipe 141c where the plating solution is heated and kept warm by the temperature controller 145 and the warmer 147 is so heated that the entire amount of the plating solution for treating a predetermined number of substrates W is heated and kept warm. The thickness and length of the part are determined. That is, the plating solution heated and kept warm by the temperature controller 145 and the warmer 147 is used up in the plating process for a certain number of substrates W, and the substrate W to be processed next is newly added by the temperature controller 145. The plating solution that has been heated and newly warmed by the warmer 147 is supplied. In this manner, the subsequent plating process is performed on the substrate with the newly heated / heated plating solution.

  Note that the portion where the plating solution is heated and kept warm by the temperature controller 145 and the warmer 147 may have a volume corresponding to an amount of the plating solution for treating one substrate W. In this case, even when a plurality of substrates W are continuously processed, a uniform plating process can be performed. For example, assuming that the amount of the plating treatment liquid heated and kept at a time by the temperature controller 145 and the heat retaining device 147 is an amount corresponding to the treatment of a plurality of substrates W, the plating treatment solution heating time in the first plating treatment And the same heating time in the final plating process. Usually, since the plating treatment liquid begins to be deteriorated by heating, uniform plating treatment may be difficult if a plurality of plating treatment solutions are heated at once. A more uniform plating process can be expected by repeating the required number of times of the amount of the plating processing solution heated by the temperature controller 145 and the incubator 147 as the processing for one substrate W. As an example of the volume of the plating treatment liquid to be kept warm by the warmer 147, when one substrate is processed, for example, it is about 1/10 of the volume of the plating treatment liquid heated by the temperature controller 145. The volume of the plating treatment liquid heated by the temperature controller 145 is about 115 [ml], and the volume of the plating treatment liquid kept warm by the warmer 147 is about 10 [ml].

  Next, the operation of the first arm 145 will be described with reference to FIG. When the process controller 51 instructs the fluid supply apparatus 200 to supply the plating solution L3, the fluid supply apparatus 200 drives the pump 232 and opens the valve 233. The fine supply timing of the plating treatment liquid L3 is controlled by controlling the valve 233. On the other hand, when the process controller 51 instructs the fluid supply device 200 to stop the supply of the plating treatment liquid L3, the fluid supply device 200 closes the valve 233, stops the pump 232, and operates the suction mechanism 146b to operate the pipe 141c. The remaining plating solution L3 is sucked back. Thereby, it is possible to prevent the plating solution L3 from dripping onto the substrate W from the nozzle 144c. The temperature adjusting fluid supply device 450 always supplies the fluid to the temperature adjuster 145 and the warmer 147 during the plating process. This is because the heating time of the plating solution L3 can be adjusted by adjusting the process time and the like described later.

  The heater 234 in the plating unit 11 of this embodiment heats and adjusts the plating treatment liquid L3 to a predetermined plating treatment temperature by means of a temperature regulator 145 and a warmer 147 provided on the first arm 142. This is in consideration of the influence of the lifetime of the plating solution. When plating a plurality of substrates W continuously, it is possible to reach a predetermined temperature by heating the plating treatment liquid L3 to be used at once. In this case, between the plating solution used for the plating process in the early stage and the plating solution used for the plating process in the late stage, until it reaches the predetermined temperature and is actually used for the plating process. There is a difference in time. However, the inventor of the present application has found that the plating solution cannot be stored for a long time after the temperature is adjusted (the characteristics change with the passage of time after the plating solution reaches a predetermined temperature). The reason why the heater 234 in the present embodiment is disposed in the first arm as heating the minimum necessary plating solution is to homogenize the properties of the plating solution during the plating process. In particular, when processing a plurality of substrates, it is possible to homogenize the characteristics of the plating processing solution used for each substrate. In addition, the apparatus can be made compact, and a decrease in the temperature of the plating treatment liquid can be suppressed.

  Next, the operation of the electroless plating unit 11 according to this embodiment will be described with reference to FIGS. FIG. 6 is a flowchart for explaining the operation of the electroless plating unit 11 according to this embodiment, in particular, the plating processing operation. FIG. 7 is a diagram showing the entire process of the electroless plating unit 11 according to this embodiment. These are figures which show the process of the plating process of the electroless-plating unit 11 which concerns on this embodiment. As shown in FIG. 6, the plating unit 11 of this embodiment includes a pre-cleaning step (“A” in the figure), a plating process (“B”), a post-cleaning step (“C”), a back surface and an end surface. The five steps of the cleaning step (same “D”) and the drying step (same “E”) are realized. Also, as shown in FIG. 7, the plating unit 11 of this embodiment cleans the back surface of the substrate, a back surface pure water supply a that supplies heated pure water, an end surface cleaning b that cleans the substrate end surface, and a back surface of the substrate. Seven treatments of backside cleaning c, post-cleaning d for cleaning the substrate following plating, plating e, pre-cleaning f for cleaning the substrate prior to plating, and pure water supply g for adjusting the hydrophilicity of the substrate Execute the liquid supply process. FIG. 8 shows the process of the plating process e shown in FIG. 7 in more detail.

  The first substrate transport mechanism 9 unloads the substrates W one by one from the FOUP F of the loading / unloading unit 1 and loads the substrates W into the transfer unit 10 of the processing unit 2. When the substrate W is carried in, the second substrate transport mechanism 14 transports the substrate W to the heating unit 12 and the cooling unit 13, and the substrate W is subjected to predetermined heat treatment. When the heat treatment is completed, the second substrate transport mechanism 14 carries the substrate W into the electroless plating unit 11.

  First, the process controller 51 executes the pre-cleaning step A. The pre-cleaning step A includes a hydrophilization process, a pre-clean process, and a pure water process.

  The process controller 51 drives the motor 135 to rotate the substrate W held on the spin chuck 130. When the spin chuck 130 rotates, the process controller 51 instructs the nozzle driving device 205 to drive the first fluid supply unit 140. The nozzle driving device 205 operates the first turning driving mechanism 143 to move the first arm 142 to a predetermined position on the substrate W (for example, a position where the nozzle 144a is the central portion of the substrate W). In addition, the nozzle driving device 205 operates the second turning driving mechanism 153 to move the second arm 152 to the peripheral edge on the substrate W. When each reaches a predetermined position, the process controller 51 instructs the fluid supply device 200 to perform a hydrophilic treatment (S301). The fluid supply device 200 opens the valve 260a and sends a predetermined amount of pure water L0 to the nozzle 144a (supply process g in FIG. 7). At this time, the nozzle 144a is set at a position of about 0.1 to 20 mm above the substrate W, for example. Similarly, the fluid supply device 200 opens the valve 243 and sends the processing liquid L4 to the nozzle 154. As the treatment liquid L4 in this treatment, a solution capable of obtaining a different hydrophilization effect in relation to the pure water L0 is used. This hydrophilization treatment acts to prevent the subsequent pre-cleaning liquid from being repelled on the surface of the substrate W and to make it difficult for the plating solution to fall off the surface of the substrate W.

  Subsequently, the process controller 51 instructs the fluid supply apparatus 200 to perform a pre-cleaning process (supply process f in FIG. 7) and back surface temperature pure water supply (the same a). The fluid supply device 200 closes the valve 260a to stop the supply of the pure water L0, closes the valve 243 to stop the supply of the processing liquid L4, drives the pump 212 and the valve 213, and drives the precleaning processing liquid L1 to the nozzle 144a. Supply (S303). Here, since the nozzle 144a has moved to the substantially central portion of the substrate W, the nozzle 144a supplies the pre-cleaning treatment liquid L1 to the substantially central portion of the substrate W. Since the pre-cleaning treatment liquid uses an organic acid or the like, it is possible to remove the copper oxide from the copper wiring without causing galvanic corrosion and to increase the nucleation density during the plating treatment.

  Next, the fluid supply device 200 supplies pure water to the fluid supply path 171. The heat exchanger 175 adjusts the temperature of the pure water sent to the fluid supply path 171, and supplies the pure water whose temperature is adjusted to the lower surface of the substrate W through the flow path 166 provided in the back plate 165. Thereby, the temperature of the substrate W is maintained at a temperature suitable for the plating process. Note that the same effect can be obtained even if the supply of pure water to the fluid supply path 171 is started simultaneously with the above-described step 300.

  When the pre-cleaning process is completed, the process controller 51 instructs the fluid supply apparatus 200 to perform a pure water process (supply process g in FIG. 7) (S305). The fluid supply device 200 operates the pump 212 and the valve 213 to stop the supply of the pre-cleaning treatment liquid L1, and opens the valve 260 to send a predetermined amount of pure water L0 to the nozzle 144a. By supplying pure water L0 from the nozzle 144a, the pre-cleaning treatment liquid is replaced with pure water. This is to prevent the process failure from occurring due to the mixing of the acidic pre-cleaning treatment liquid L1 and the alkaline plating treatment liquid.

  Subsequent to the pre-cleaning process A, the process controller 51 executes a plating process B. The plating process B includes a plating solution replacement process, a plating solution deposition process, a plating solution process, and a pure water process.

  The process controller 51 instructs the fluid supply device 200 and the nozzle driving device 205 to perform a plating solution replacement process (supply process e in FIG. 7). The fluid supply device 200 closes the valve 260a to stop the supply of the pure water L0 and operates the pump 232 and the valve 233 to supply the plating solution L3 to the nozzle 144c. On the other hand, the nozzle driving device 205 operates the first turning drive mechanism 143 to turn the first arm 142 so that the nozzle 144c moves (scans) from the central part to the peripheral part to the central part of the substrate W. (S312). In the plating solution replacement process, the plating solution supply nozzle moves from the central portion to the peripheral portion to the central portion, and the substrate W rotates at a relatively high rotational speed (“replacement X” process in FIG. 8). By this operation, the plating solution L3 diffuses on the substrate W, and the pure water on the surface of the substrate W can be quickly replaced with the plating solution.

  When the plating solution replacement process is completed, the process controller 51 reduces the rotation speed of the substrate W held by the spin chuck 130 and instructs the fluid supply device 200 and the nozzle driving device 205 to perform the plating solution deposition process. The fluid supply device 200 continuously supplies the plating solution L3, and the nozzle drive device 205 operates the first turning drive mechanism 143 so that the nozzle 144c gradually moves from the central portion toward the peripheral portion of the substrate W. Move (S314). A sufficient amount of the plating solution L3 is placed on the surface of the substrate W subjected to the plating solution replacement treatment. Furthermore, when the nozzle 144c approaches the vicinity of the peripheral edge of the substrate W, the process controller 51 further decelerates the rotation speed of the substrate W (“Liquid Y” process in FIG. 8).

  Subsequently, the process controller 51 instructs the fluid supply device 200 and the nozzle driving device 205 to perform a plating process. The nozzle driving device 205 operates the first turning drive mechanism 143 to turn the first arm 142 so that the nozzle 144c is positioned at a substantially intermediate position between the center portion and the peripheral portion of the substrate W.

  Next, the fluid supply device 200 operates the pump 232 and the valve 233 to supply the plating solution L3 intermittently and intermittently to the nozzle 144c (S317). That is, as shown in the “plating Z” process of FIGS. 7 and 8, the nozzle is disposed at a predetermined position and the plating solution is intermittently and intermittently supplied. Since the substrate W is rotating, even if the plating L3 is supplied intermittently (intermittently), the plating solution L3 can be distributed evenly throughout the substrate W. Note that the processing of steps 312, 314, and 317 may be repeated. After the plating solution L3 is supplied and a predetermined time has elapsed, the fluid supply device 200 stops supplying the plating solution L3, and the process controller 51 stops supplying hot pure water to the back surface of the substrate W.

  In the plating process B, in response to an instruction from the process controller 51, the fluid supply device 200 operates the supply mechanism 146a to supply the plating solution L3 to the nozzle 144c. The supply mechanism 146a controls the feeding of the plating solution so that the plating solution fills the piping 141c inside the temperature controller 145 and the heat retainer 147 and the plating solution does not drip from the nozzle 144c. The suck back mechanism 146b acts to suck back the plating solution that has been supplied so that it does not drip from the nozzle 144c.

  Further, the process controller 51 instructs the fluid supply device 200 and the nozzle driving device 205 to perform pure water treatment (supply process g in FIG. 7). The process controller 51 increases the rotation speed of the substrate W held on the spin chuck 130, and the nozzle driving device 205 operates the first turning driving mechanism 143 so that the nozzle 144 c is positioned at the center of the substrate W. Thus, the first arm 142 is turned. Thereafter, the fluid supply device 200 opens the valve 260a and supplies pure water L0 (S321). Thereby, it is possible to remove the plating solution remaining on the surface of the substrate W and prevent the post-treatment solution and the plating solution from being mixed.

  Subsequent to the plating process B, the process controller 51 executes a post-cleaning process C. The post-cleaning step C includes post chemical treatment and pure water treatment.

  The process controller 51 instructs the fluid supply apparatus 200 to perform post chemical liquid processing (supply process d in FIG. 7). The fluid supply device 200 closes the valve 260a to stop the supply of the pure water L0 and operates the pump 222 and the valve 223 to supply the post-cleaning treatment liquid L2 to the nozzle 144b (S330). The post-cleaning treatment liquid L2 acts to remove residues on the surface of the substrate W and abnormally deposited plating films.

  Following the post chemical treatment, the process controller 51 instructs the fluid supply device 200 to perform pure water treatment (supply process g in FIG. 7). The fluid supply device 200 operates the pump 222 and the valve 223 to stop the supply of the post-cleaning treatment liquid L2, and opens the valve 260b to supply the pure water L0 (S331).

  Subsequent to the post-cleaning step C, the process controller 51 executes a back surface / end surface cleaning step D. The back surface / end surface cleaning step D includes a liquid removal process, a back surface cleaning process, and an end surface cleaning process.

  The process controller 51 instructs the fluid supply device 200 to perform a liquid removal process. The fluid supply device 200 closes the valve 260b and stops the supply of the pure water L0, and the process controller 51 increases the rotation speed of the substrate W held by the spin chuck 130. This treatment is intended to remove the liquid on the surface of the substrate W by drying the surface of the substrate W.

  When the liquid removal process ends, the process controller 51 instructs the fluid supply device 200 to perform the back surface cleaning process. First, the process controller 51 first decelerates the rotation speed of the substrate W held on the spin chuck 130. Subsequently, the fluid supply apparatus 200 supplies pure water to the fluid supply path 171 (supply process a in FIG. 7). The heat exchanger 175 adjusts the temperature of the pure water sent to the fluid supply path 171 and supplies the temperature-adjusted pure water to the back surface of the substrate W through the flow path provided in the back plate 165 (S342). The pure water acts to make the back side of the substrate W hydrophilic. Next, the fluid supply device 200 stops the supply of pure water to the fluid supply path 171 and supplies the back surface cleaning liquid to the fluid supply path 171 instead (S343). The back surface cleaning liquid acts to clean and remove residues on the back surface side of the substrate W in the plating process (supply process c in FIG. 7).

  Thereafter, the process controller 51 instructs the fluid supply device 200 and the nozzle driving device 205 to perform an end surface cleaning process. The fluid supply device 200 stops the supply of the back surface cleaning liquid to the back surface of the substrate W, and instead supplies pure water whose temperature is adjusted by the heat exchanger 175 to the fluid supply path 171 (S344) (supply process a in FIG. 7). ).

  Subsequently, the nozzle driving device 205 operates the second turning drive mechanism 153 to turn the second arm 152 so that the nozzle 154 is positioned at the end of the substrate W, and the process controller 51 The rotational speed is increased to about 150 to 300 rpm. Similarly, the nozzle driving device 205 operates the first turning drive mechanism 143 to turn the first arm 142 so that the nozzle 144b is positioned at the center of the substrate W. The fluid supply device 200 opens the nozzle 260b to supply pure water L0 to the nozzle 144b, and operates the pump 242 and the nozzle 243 to supply the outer peripheral portion processing liquid L4 to the nozzle 154 (in FIG. g). That is, in this state, pure L0 is supplied to the central portion of the substrate W, the outer peripheral portion processing liquid L4 is supplied to the end portion, and pure water whose temperature is adjusted is supplied to the back surface of the substrate W (S346). .

  Following the back surface / end surface cleaning step D, the process controller 51 executes a drying step E. The drying process E includes a drying process.

  The process controller 51 instructs the fluid supply device 200 and the nozzle driving device 205 to perform a drying process. The fluid supply device 200 stops the supply of all the processing liquids, and the nozzle driving device 205 retracts the first arm 142 and the second arm 152 from above the substrate W. Further, the process controller 51 increases the rotation speed of the substrate W to about 800 to 1000 rpm to dry the substrate W (S351). When the drying process is finished, the process controller 51 stops the rotation of the substrate W. When the plating process is completed, the transfer arm 14A of the second substrate transfer mechanism 14 takes out the substrate W from the spin chuck 130 through the window 115.

  In addition, the pre-cleaning process, the plating process, the post-cleaning process, the back / end surface cleaning process), the drying process, the process procedure, and the supply / The drive operation and the operation sequences of various valves and pumps are all stored in the storage unit 53, and the process controller 51 instructs each unit to operate and control based on the stored contents.

  Here, the operation of the temperature controller 145 in the entire plating process when the temperature controller 145 and the warmer 147 warm and keep the plating solution corresponding to one plating process every time will be described. The temperature controller 145 heats the plating solution flowing through the pipe 141c to a predetermined temperature. Specifically, as shown in FIG. 6, in the initial state (state in which the first substrate is processed), the temperature controller 145 moves the plating solution to a predetermined temperature between step 301 and step 312. The warmer 147 keeps the plating solution heated by the temperature controller 145 flowing through the pipe 141c at the predetermined temperature ((1) period of wavy line in FIG. 6). At this time, since the plating solution is held so as not to drip from the nozzle 144c, the plating solution is heated to a predetermined temperature and the temperature is maintained. During the plating process B, the plating solution is supplied by the plating solution replacement process, plating solution deposition process, and plating process, so the plating process solution moves through the pipe and is hardly heated (not easily heated). ) State.

  When the processing of the first substrate is completed and the pure water treatment in step 321 is performed, the supply of the plating treatment liquid is stopped, and thus the temperature controller 145 can resume the heating of the plating treatment liquid. The heating period of the plating solution for processing the second substrate is from step 321 where the plating process B of the first substrate is completed to step 312 where the plating process B of the second substrate is started. (In FIG. 6, (2) period of a one-dot chain line). Similarly, the heating period of the plating solution for processing the third substrate is a period indicated by a two-dot chain line in FIG. That is, the periods (1) to (3) shown in FIG. 6 are periods for heating the plating solution for treating the substrate. As will be described later, the treatment conditions vary depending on how long the treatment solution is heated in addition to the solution temperature at the time of the plating treatment, so in order to realize a uniform plating treatment ( It is desirable that all the periods of 1) to (3) are the same time. In the entire plating process, a stabilization process using a dummy substrate (dummy wafer) may be included. Thereby, a uniform film thickness can be obtained when a plurality of substrates W are processed.

  The plating solution is sent out in accordance with the time and timing instructed by the process controller 51. However, the entire amount of the plating solution held in the temperature regulator 145 and the pipe 141c in the warmer 147 is supplied in one plating process. To be controlled. That is, after one plating process is completed, the new temperature of the temperature regulator 145 and the pipe 141c in the heat insulator 147 are filled with a new plating solution that has not been subjected to the heating / heat retaining process.

  Here, the relationship between the temperature of the plating treatment solution and the plating film forming temperature will be described. FIG. 9 is a diagram showing the relationship between the plating solution temperature and the plating film forming rate with respect to the heating time of the plating treatment solution prepared in a certain composition. FIG. 10 is a diagram showing the relationship between the plating solution temperature and the plating film formation rate for each heating time for a plurality of plating treatment solutions having different compositions of TMAH used as a pH adjuster. In these figures, the amount of the plating treatment liquid corresponds to the capacity of the temperature controller 145 and the heat retainer 147.

  In general, the composition of the plating treatment solution is composed of a solution containing cobalt, a complexing agent, a pH adjusting agent, and a reducing agent. For stable plating treatment, it is necessary to warm and keep the plating solution to maintain the reaction temperature appropriately. On the other hand, if the heat retention time of the plating treatment solution is long, deposition of cobalt metal starts in the plating treatment solution, and when this precipitate is supplied to the treatment surface of the substrate, foreign matter is contained in the plating film. It is known that such precipitation occurs in about 30 minutes after the start of heating of the plating solution under general heat retention conditions (60 ° C.).

  Furthermore, when using the plating process liquid which has this composition, it is thought that reaction as a reducing agent of a plating process liquid can be accelerated | stimulated or suppressed by adjusting pH concentration. This means that it is possible to adjust the state of plating film formation, which is the result of the reduction reaction of the plating treatment solution, specifically, the film formation speed by adjusting the pH concentration.

  As shown by a broken line in FIG. 9, the time required for raising the temperature of the plating solution to the target value of 60 ° C. (heating time) is about 50 seconds. Thereafter, as the heat retention time elapses, the plating film forming speed indicated by the solid line increases rapidly, but only slightly increases when the heating time exceeds 300 seconds. As described above, deposition of metal ions in the plating solution occurs in about 1800 seconds (30 minutes). This means that it is better to use a plating solution that maintains a certain degree of warming / warming state than to use a plating solution immediately after the temperature of the plating solution reaches a set temperature (after heating for about 50 seconds). This shows that it is possible to realize a stable and high plating rate plating process. In other words, in order to adjust the plating treatment liquid to a temperature suitable for the plating treatment, not only the time for raising the liquid temperature but also the heating time for maintaining the liquid temperature at an appropriate temperature is required.

  FIG. 10 shows that the heating time of the plating solution (a heating time necessary for stabilizing the film forming speed) to obtain a desired film forming speed depends on the composition ratio of the pH adjuster (TMAH). Yes. That is, in the case of a plating process that requires a high deposition rate, a plating process solution to which a high concentration of TMAH is added may be used. On the other hand, if it is necessary to shorten the heating time, a low concentration is required. It can be seen that a plating solution to which TMAH is added may be used.

  When continuously plating a plurality of substrates, the substrate processing time required for processing one substrate may be shorter or longer than the appropriate heating time of the plating solution. When the substrate processing time is shorter than the heating time of the plating processing solution, the heating time of the plating processing solution can be shortened by adjusting the concentration of the pH adjusting agent (TMAH) to be low. However, in this case, since the plating processing time required to reach the required film thickness becomes long, it is necessary to delay the start time of the subsequent processing of a new substrate. Thus, it becomes possible to implement | achieve a desired metal-plating process by adjusting the heating time of a metal-plating process liquid, and board | substrate process time.

  By the way, in the continuous plating processing of a plurality of substrates, the substrate processing time required for processing one substrate is the time of the steps other than supplying the plating solution (in the example shown in FIG. 7, each process of steps A, C, D, and E). For example, it may be difficult to adjust the heating time of the plating solution and the substrate processing time only by adjusting the pH adjuster of the plating solution. In such a case, it can be realized by intentionally adjusting the timing of the start of heating of the plating solution or the start of substrate processing (start of supply of the plating solution).

  Hereinafter, with reference to FIG. 11 and FIG. 12, the setting of the sequence which adjusts the timing of the start of heating time or the start of substrate processing (start of plating solution supply) in the case of continuous plating processing of a plurality of substrates A method will be described. 11 and 12 are diagrams in which the plating process shown in FIG. 6 is performed on a plurality of substrates W. FIG.

  As shown in FIG. 11, when one substrate W is plated, the pre-cleaning step A, the plating step B, the post-cleaning step C, the back / end surface cleaning step D and the drying step E shown in FIGS. It goes through. In this case, after the drying process E of the nth process and before the (n + 1) th pre-cleaning process A is started, the processed substrate W is discharged and a new process substrate W is carried in.

  Here, in order to obtain a plating treatment solution having a predetermined temperature and a predetermined film formation rate in the plating step B, the plating treatment solution is heated to a predetermined temperature before the plating step B is started, and It is necessary to continue heating for a predetermined time. Therefore, at the normal heating timing shown in (1) of FIG. 11, the heating of the plating solution is started after the post-cleaning step C is started, and the heating is maintained until the pre-cleaning step A is completed. . During the plating process B, since the heated plating process liquid is discharged from the nozzle 144C and a new plating process liquid is supplied to the temperature controller 145 and the incubator 147, it is virtually not heated. .

If the plating treatment solution heating time necessary for obtaining the film formation rate necessary for the plating treatment is short, for example, the heating is shorter than the time required from the start of the post-cleaning step C to the end of the pre-cleaning step A Consider the case where time is required ((2) in FIG. 11). In this case, the processing time of each process A to E can be adjusted, but other parameters for the plating process may be changed, which may be undesirable. In such a case, after the post-cleaning step C is started, the temperature controller 145 and the warmer 147 may start heating / warming after a delay of Δt ₁₁ , Δt ₁₂ , Δt ₁₃ . This control can be realized by instructing the temperature controller 145 and the warmer 147 from the process controller 51. As described above, the delay time of Δt ₁₁ , Δt ₁₂ , Δt _13, ... Is given each time one substrate W is processed as in the nth, n + 1th, n + 2th,. By starting the heat-retaining process, it is possible to realize a plating process at a predetermined film formation rate without changing the time required for the process such as the pre-cleaning process A. Note that the delay times Δt ₁₁ · Δt ₁₂ · Δt ₁₃ ... For each substrate to be processed are not necessarily the same. When performing plating treatment under different conditions for each substrate, a delay time can be set according to each condition.

On the other hand, in the case where the plating treatment solution heating time necessary for obtaining the film formation rate necessary for the plating treatment is long, for example, the heating is longer than the time required from the start of the post-cleaning step C to the end of the pre-cleaning step A Consider the case where time is required ((3) in FIG. 12. In this case, contrary to (2) in FIG. 11, a waiting time of process waiting time Δt ₂₁ · Δt ₂₂ ... Is provided after the drying step E is completed. Then, the start of the pre-cleaning step A may be delayed by Δt ₂₁ · Δt ₂₂ ..., And as a result, the heating time and the heat retention time may be extended, and this control can also be realized by an instruction from the process controller 51. In this way, each time one substrate W is processed, as in the n-th, n + 1-th, n + 2-th, etc., a waiting time of Δt ₂₁ · Δt ₂₂ . In the pre-cleaning step A etc. It is possible to realize a plating process with a predetermined deposition rate without changing the duration of the process. In addition, the waiting time for each substrate to be processed Δt _{21 ·} Δt _{22 ...,} as well as the delay time of the above, necessarily When plating is performed under different conditions for each substrate, a waiting time can be set according to each condition.

  According to the electroless plating unit of the embodiment shown in FIGS. 1 to 4, the heating is performed immediately before the plating process, the temperature is kept for a predetermined time, and the heated and kept plating solution is used up in one plating process. Therefore, the temperature of the plating solution and the heating time can be accurately controlled, and a process excellent in the balance between the deposition ability of the plating solution and the substrate processing speed can be realized.

  In addition, this invention is not limited only to the said embodiment and its modification. The present invention is not limited to the above-described embodiments as they are, and can be embodied by modifying the constituent elements without departing from the scope of the invention in the implementation stage. In addition, various inventions can be formed by appropriately combining a plurality of components disclosed in the embodiment. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, constituent elements over different embodiments may be appropriately combined.

  The present invention can be applied to the semiconductor manufacturing industry.

  DESCRIPTION OF SYMBOLS 1 ... Unloading part, 2 ... Processing part, 3 ... Conveying part, 5 ... Control apparatus, 11 ... Electroless plating unit, 51 ... Process controller, 110 ... Outer chamber, 120 ... Inner chamber, 130 ... Spin chuck, 132 ... Rotation Plate, 134a ... support pin, 134b ... pressing pin, 140 ... first fluid supply unit, 142 ... first arm, 143 ... first swivel drive mechanism, 144a, 144b, 144c ... nozzle, 150 ... second Fluid supply section, 152 ... second arm, 153 ... second swivel drive mechanism, 154 ... nozzle, 160 ... gas supply section, 165 ... back plate, 166 ... flow path, 170 ... shaft, 171 ... fluid supply path, 175 ... Heat exchanger, 200 ... Fluid supply device, 205 ... Nozzle driving device.

Claims (3)

A semiconductor manufacturing method for continuously plating a plurality of substrates,
A predetermined amount of plating solution containing a pH adjusting agent necessary for processing one substrate is accommodated in a temperature adjusting container,
The plating solution contained in the temperature adjusting container is adjusted to a predetermined temperature according to the plating film forming speed necessary for the plating treatment and the concentration of the pH adjusting agent contained in the plating solution,
Hold the substrates one by one in place,
The temperature adjusted by being accommodated in the temperature adjusting container for each of the held substrates at a timing according to the plating film forming speed necessary for the plating treatment and the concentration of the pH adjusting agent contained in the plating solution. A method of manufacturing a semiconductor, characterized in that the whole amount of plating solution is discharged onto the processing surface of the held substrate.   2. The semiconductor manufacturing method according to claim 1, wherein the temperature of the plating solution stored in the temperature adjusting container is further adjusted based on a process time required for the plating process.   The total amount of the plating solution accommodated in the temperature adjusting container and temperature-adjusted is further discharged to the processing surface of the held substrate at a timing based on a process time required for the plating process. Or the semiconductor manufacturing method of 2.

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