JP2010283051A - Laminate for solar cell - Google Patents

Laminate for solar cell Download PDF

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Publication number
JP2010283051A
JP2010283051A JP2009133777A JP2009133777A JP2010283051A JP 2010283051 A JP2010283051 A JP 2010283051A JP 2009133777 A JP2009133777 A JP 2009133777A JP 2009133777 A JP2009133777 A JP 2009133777A JP 2010283051 A JP2010283051 A JP 2010283051A
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silicon wafer
protective layer
layer
laminate
solar cell
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JP2009133777A
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Japanese (ja)
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Toshinori Isobe
敏典 磯部
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Sumitomo Chemical Co Ltd
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Sumitomo Chemical Co Ltd
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Priority to JP2009133777A priority Critical patent/JP2010283051A/en
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/546Polycrystalline silicon PV cells

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Abstract

<P>PROBLEM TO BE SOLVED: To achieve thinning of a silicon wafer for a solar cell. <P>SOLUTION: A laminate for the solar cell has a silicon wafer layer and a protective layer. The protective layer can have electrodes. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、太陽電池用積層体に関する。   The present invention relates to a laminate for a solar cell.

単結晶型または多結晶型の太陽電池は、コストや変換効率の点から、最も普及している太陽電池であるが、さらなるコスト削減等の観点から、シリコンウエハーの薄型化が求められている。   Single-crystal or polycrystalline solar cells are the most popular solar cells in terms of cost and conversion efficiency. However, from the viewpoint of further cost reduction and the like, thinning of the silicon wafer is required.

しかしながら、かかる太陽電池用シリコンウエハーを厚さ300μm以下に薄型化すると、運搬時や加工時には破損しやすく、また、熱処理時にはウエハの反りが生じやすく、それらの改善が求められていた。   However, if such a silicon wafer for solar cells is thinned to a thickness of 300 μm or less, the wafer is easily damaged during transportation or processing, and the wafer is likely to be warped during heat treatment.

本発明者は、太陽電池用シリコンウエハーの薄型化について鋭意検討を重ねた結果、本発明に至った。   The inventor of the present invention has reached the present invention as a result of intensive studies on thinning the silicon wafer for solar cells.

すなわち、本発明は、
1.シリコンウエハー層と保護層とを有する太陽電池用積層体;
2.シリコンウエハー層の両面または片面に保護層を有する前項1に記載される積層体;
3.シリコンウエハー層の厚さが50μm以上、250μm以下である前項1または2に記載される積層体;および
4.保護層が電極を有している前項1〜3のいずれかに記載される積層体;
を提供するものである。
That is, the present invention
1. A laminate for a solar cell having a silicon wafer layer and a protective layer;
2. The laminate as described in 1 above, having a protective layer on both sides or one side of the silicon wafer layer;
3. 3. The laminate as described in 1 or 2 above, wherein the thickness of the silicon wafer layer is 50 μm or more and 250 μm or less; and The laminated body as described in any one of the preceding items 1 to 3, wherein the protective layer has an electrode;
Is to provide.

本発明によれば、太陽電池用シリコンウエハーの薄型化が容易になる。   According to the present invention, it is easy to reduce the thickness of a silicon wafer for solar cells.

図1は、本発明の積層体の断面図の一例である。FIG. 1 is an example of a cross-sectional view of the laminate of the present invention. 図2は、結晶Si系太陽電池作製プロセスの一例である。FIG. 2 is an example of a process for producing a crystalline Si solar cell.

以下、本発明を詳細に説明する。本発明は、シリコンウエハー層と保護層とを有する太陽電池用積層体である。   Hereinafter, the present invention will be described in detail. The present invention is a solar cell laminate having a silicon wafer layer and a protective layer.

シリコンウエハー層の厚さは、通常300μm以下であり、好ましくは50μm以上、250μm以下の範囲である。   The thickness of the silicon wafer layer is usually 300 μm or less, preferably 50 μm or more and 250 μm or less.

保護層は、シリコンウエハー層の両面に有していてもよいし、片面のみに有していてもよい。保護層の基材としては特に制限は無く、例えば、ポリエチレン、直鎖状低密度ポリエチレン、ポリプロピレン、エチレン−酢酸ビニル共重合体、エチレン−メタアクリル酸メチル、ポリ塩化ビニル、ポリアミド、ポリエチレンテレフタレート、ポリビニルアルコール、ポリビニルブチラール、シリコーン等の合成樹脂が用いられ、単体であっても複層体であってもよい。その厚さは、20μm以上、500μm以下の範囲であることが好ましい。フィルム状の基材をシリコンウエハー層に積層することにより保護層を形成してもよいし、液状やゲル状等の流動性の基材をシリコンウエハーの表面に塗布し、固化させて積層することにより保護層を形成してもよい。   The protective layer may be provided on both sides of the silicon wafer layer, or may be provided only on one side. The base material of the protective layer is not particularly limited. For example, polyethylene, linear low-density polyethylene, polypropylene, ethylene-vinyl acetate copolymer, ethylene-methyl methacrylate, polyvinyl chloride, polyamide, polyethylene terephthalate, polyvinyl Synthetic resins such as alcohol, polyvinyl butyral, and silicone are used and may be a single body or a multilayer. The thickness is preferably in the range of 20 μm or more and 500 μm or less. A protective layer may be formed by laminating a film-like base material on a silicon wafer layer, or a liquid or gel-like fluid base material is applied to the surface of the silicon wafer and solidified for lamination. A protective layer may be formed by the above.

該保護層は、電極を有していてもよい。電極材料としては特に制限はないが、例えば、一般的に太陽電池用電極材料として使用されているAg、Al、Au、Cuなどを挙げることができる。中でも、裏面電極材としては電気伝導性の観点からAgまたはAlが好ましく、さらにシリコンウエハー内の該電極付近にp+層を形成することによりBSF(Back Surface Field)効果を得るためにAlがより好ましい。表面電極としては電気伝導性の観点からAgがより好ましい。また該保護層内の電極の形状としては特に制限は無いが、太陽光を効率的に吸収させる観点から表面電極は、高アスペクト比(図1中のb/a値が1以上)の形状がより好ましい。   The protective layer may have an electrode. Although there is no restriction | limiting in particular as an electrode material, For example, Ag, Al, Au, Cu etc. which are generally used as an electrode material for solar cells can be mentioned. Among them, as the back electrode material, Ag or Al is preferable from the viewpoint of electrical conductivity, and Al is more preferable in order to obtain a BSF (Back Surface Field) effect by forming a p + layer near the electrode in the silicon wafer. . The surface electrode is more preferably Ag from the viewpoint of electrical conductivity. The shape of the electrode in the protective layer is not particularly limited, but the surface electrode has a high aspect ratio (b / a value in FIG. 1 is 1 or more) from the viewpoint of efficiently absorbing sunlight. More preferred.

フィルム状の保護層をシリコンウエハー層に積層させる際に、粘着剤を用いてもよい。粘着剤には特に制限はなく、例えば、溶液型粘着剤、エマルジョン型粘着剤、ホットメルト型粘着剤等の公知の粘着剤を使用することができる。具体的には、アクリル系粘着剤、ビニルエーテル系粘着剤、シリコン系粘着剤、ゴム系粘着剤等が挙げられる。粘着層の 厚さは、1μm以上、200μm以下の範囲であることが好ましい。   An adhesive may be used when the film-like protective layer is laminated on the silicon wafer layer. There is no restriction | limiting in particular in an adhesive, For example, well-known adhesives, such as a solution type adhesive, an emulsion type adhesive, a hot-melt type adhesive, can be used. Specific examples include acrylic adhesives, vinyl ether adhesives, silicon adhesives, rubber adhesives, and the like. The thickness of the adhesive layer is preferably in the range of 1 μm to 200 μm.

次に、本発明の積層体の製造方法について説明する。本発明の積層体は、シリコンインゴットの平面状の表面に保護層を形成する第一工程と、保護層が形成された表面を有するシリコンインゴットから該表面と平行にシリコンウエハー層を切り出す第二工程とを含む方法により製造される。また、かかる製造方法は、さらに、切り出されたシリコンウエハー層のうち保護層を有さない平面状の表面に保護層を形成する第三工程を含んでいてもよい。   Next, the manufacturing method of the laminated body of this invention is demonstrated. The laminate of the present invention includes a first step of forming a protective layer on a planar surface of a silicon ingot, and a second step of cutting a silicon wafer layer parallel to the surface from a silicon ingot having a surface on which the protective layer is formed. It is manufactured by the method containing these. Moreover, this manufacturing method may further include a third step of forming a protective layer on a planar surface having no protective layer among the cut silicon wafer layers.

シリコンインゴットの純度は、切り出されるシリコンウエハー層が太陽電池用として使用可能な範囲であれば、特に限定されない。その平面状の表面とは、シリコンインゴットからシリコンウエハー層または不要部分を切り出して得られる面をいう。保護層は、該表面に粘着剤を塗布し、その上にフィルム状の基材を貼付する方法により形成してもよいし、予め粘着剤が塗布されたフィルム状の基材を、該表面に粘着剤が接するように貼付する方法により形成してもよいし、該表面に液状やゲル状等の流動性の基材を塗布し、固化させる方法により形成してもよい。   The purity of the silicon ingot is not particularly limited as long as the silicon wafer layer to be cut out can be used for solar cells. The planar surface means a surface obtained by cutting a silicon wafer layer or an unnecessary portion from a silicon ingot. The protective layer may be formed by a method in which an adhesive is applied to the surface and a film-like substrate is applied thereon, or a film-like substrate to which an adhesive has been previously applied is applied to the surface. You may form by the method of sticking so that an adhesive may touch, and you may form by the method of apply | coating and solidifying fluid base materials, such as a liquid form and a gel form, to this surface.

保護層が形成された表面を有するシリコンインゴットからシリコンウエハー層を切り出す方法としては、例えば、バンドソー(帯ノコギリ)やワイヤーソーを用いる方法等の通常の方法が挙げられる。第一工程で得られる保護層が形成された表面から、所望する太陽電池用シリコンウエハー層の厚さに相当する箇所を切断すればよい。   Examples of a method for cutting out a silicon wafer layer from a silicon ingot having a surface on which a protective layer is formed include a normal method such as a method using a band saw or a wire saw. What is necessary is just to cut | disconnect the location corresponded in the thickness of the silicon wafer layer for solar cells desired from the surface in which the protective layer obtained by a 1st process was formed.

第三工程における保護層の形成は、第一工程と同様に実施すればよい。   The formation of the protective layer in the third step may be performed in the same manner as in the first step.

本発明の太陽電池用積層体は、必要に応じて加熱処理や化学的処理により、保護層や粘着層を除去し、シリコンウエハー層を残すことができる。この際、保護層が電極を有している場合は、電極を有するシリコンウエハー層が形成される。   The laminated body for solar cells of this invention can remove a protective layer and an adhesion layer by heat processing and chemical treatment as needed, and can leave a silicon wafer layer. At this time, when the protective layer has an electrode, a silicon wafer layer having the electrode is formed.

また本発明の太陽電池用積層体は、モジュール工程において他の一般的な封止材と積層させることもできる。   Moreover, the laminated body for solar cells of this invention can also be laminated | stacked with another general sealing material in a module process.

本発明の積層体の製造を含む結晶Si系太陽電池作製プロセスの一例を図2に示す。図2において、I.は上記の第一工程に、II.は上記の第二工程に、III.は上記の第三工程に、それぞれ相当する。したがって、II.またはIII.の段階で本発明の積層体が製造される。図2のIV.以降の工程は必要に応じて実施すればよい。例えば、VII.やIX.の工程は、保護層に電極を有している場合にのみ実施すればよい。また、VIII.の工程は、上記の保護層や粘着層を除去するための加熱処理に相当する。   An example of a process for producing a crystalline Si solar cell including the production of the laminate of the present invention is shown in FIG. In FIG. In the above first step, II. In the second step above, III. Corresponds to the above third step. Therefore, II. Or III. In this stage, the laminate of the present invention is manufactured. IV in FIG. The subsequent steps may be performed as necessary. For example, VII. And IX. This step may be performed only when the protective layer has an electrode. In addition, VIII. This step corresponds to a heat treatment for removing the protective layer and the adhesive layer.

本発明により、太陽電池用シリコンウエハーの薄型化が期待される。   According to the present invention, a thin silicon wafer for solar cells is expected.

1.シリコンウエハー層
2.保護層(着色部分は電極を表す)
1. 1. Silicon wafer layer Protective layer (colored parts represent electrodes)

Claims (4)

シリコンウエハー層と保護層とを有する太陽電池用積層体。 A laminate for a solar cell having a silicon wafer layer and a protective layer. シリコンウエハー層の両面または片面に保護層を有する請求項1に記載される積層体。 The laminate according to claim 1, further comprising protective layers on both sides or one side of the silicon wafer layer. シリコンウエハー層の厚さが50μm以上、250μm以下である請求項1または2に記載される積層体。 The laminate according to claim 1 or 2, wherein the thickness of the silicon wafer layer is 50 µm or more and 250 µm or less. 保護層が電極を有している請求項1〜3のいずれかに記載される積層体。 The laminated body in any one of Claims 1-3 in which the protective layer has an electrode.
JP2009133777A 2009-06-03 2009-06-03 Laminate for solar cell Pending JP2010283051A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101900400B1 (en) * 2017-09-26 2018-09-20 웅진에너지 주식회사 Bonding and debonding apparatus for handling single crystal ultra-thin wafer for solar cell and method for the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101900400B1 (en) * 2017-09-26 2018-09-20 웅진에너지 주식회사 Bonding and debonding apparatus for handling single crystal ultra-thin wafer for solar cell and method for the same

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