JP2010267726A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP2010267726A
JP2010267726A JP2009116752A JP2009116752A JP2010267726A JP 2010267726 A JP2010267726 A JP 2010267726A JP 2009116752 A JP2009116752 A JP 2009116752A JP 2009116752 A JP2009116752 A JP 2009116752A JP 2010267726 A JP2010267726 A JP 2010267726A
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Prior art keywords
semiconductor device
case
gel filler
gel
bonding wire
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Japanese (ja)
Inventor
Kenta Suzuki
健太 鈴木
Hiroaki Takahashi
博明 高橋
Yuki Nakajima
祐樹 中島
Yukio Mizukoshi
幸雄 水越
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Nissan Motor Co Ltd
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Nissan Motor Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which prevents disconnection of a bonding wire caused by swing of gel-like filling material filled in a case, and improves vibration resistance strength. <P>SOLUTION: The semiconductor device includes the gel-like filling material 8 filled in the case 7 to protect a semiconductor element and the bonding wire. The gel-like filling material 8 is filled in the case 7 to bring a vibration direction K generated in the semiconductor device 1 and a short side direction S of the gel-like filling material 8 in line. The gel-like filling material 8 easily resonates with vibration applied on the semiconductor device in a longitudinal direction L, while hardly resonates in a short side direction S. Therefore, swing of the gel-like filling material is suppressed, to prevent disconnection of the bonding wire. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、半導体装置に関し、詳細には、耐振動強度向上技術に関する。   The present invention relates to a semiconductor device, and more particularly to a technique for improving vibration resistance strength.

従来、例えばエンジンやモータ等の出力軸線方向よりもエンジンのシリンダ内に振動が作用する方向や出力軸線回りの振れ回りの振動の方が大きいのに合わせて、電子制御ユニットやパワーユニット等の電子回路をモジュール化したモジュール部品を、振動の影響の少ない出力軸線方向に対してボンディングワイヤを含む平面が垂直となるように配置することで、ボンディングワイヤの耐久性を損なうボンディングワイヤを含む面に垂直な方向への大きな振動が加わるのを防止する技術が提案されている（例えば、特許文献１に記載）。   Conventionally, electronic circuits such as an electronic control unit and a power unit are adapted to the direction in which vibration is applied in the cylinder of the engine and the vibration around the output axis are larger than the direction of the output axis of the engine or motor, for example. By arranging module parts that are modularized so that the plane including the bonding wire is perpendicular to the output axis direction where the influence of vibration is small, it is perpendicular to the surface including the bonding wire that impairs the durability of the bonding wire. A technique for preventing a large vibration in a direction from being applied has been proposed (for example, described in Patent Document 1).

国際公開第２００２／０２５０８７号International Publication No. 2002/025087

しかし、特許文献１に記載の技術では、外乱によって半導体装置に入力される大きな振動（加振力）に対してモジュールケース内に充填された粘弾性を呈するゲル状物質が共振することによって変位し、そのゲル状物質の変位に連動してボンディングワイヤも変位することから、前記ボンディングワイヤが断線等するといった問題が発生する。   However, in the technique described in Patent Document 1, the gel-like substance exhibiting viscoelasticity filled in the module case is displaced by resonance with a large vibration (excitation force) input to the semiconductor device due to disturbance. Since the bonding wire is displaced in conjunction with the displacement of the gel-like substance, there arises a problem that the bonding wire is disconnected.

そこで、本発明は、ケース内に充填されたゲル状充填材の揺動によるボンディングワイヤの断線を防止し、耐振動強度を向上させることのできる半導体装置を提供する。   Therefore, the present invention provides a semiconductor device capable of preventing the bonding wire from being broken by the swinging of the gel filler filled in the case and improving the vibration resistance strength.

本発明の半導体装置では、半導体装置に発生する振動方向とゲル状充填材の短手方向を一致させて、前記ゲル状充填材をケース内に充填した構造とする。   The semiconductor device according to the present invention has a structure in which the vibration direction generated in the semiconductor device and the short direction of the gel filler are matched, and the gel filler is filled in the case.

本発明の半導体装置によれば、半導体装置に発生する振動方向とゲル状充填材の短手方向を一致させたことにより、ゲル状充填材の長手方向に対して短手方向は揺動し難い（共振し難い）ことからゲル状充填材の揺動を抑制することができ、ボンディングワイヤに加わる強制変位を低減できる。その結果、ボンディングワイヤの断線を防止することができ、半導体装置の耐振信頼性を向上させることができる。   According to the semiconductor device of the present invention, since the vibration direction generated in the semiconductor device matches the short direction of the gel filler, the short direction hardly swings with respect to the longitudinal direction of the gel filler. Since it is difficult to resonate, the gel filler can be prevented from swinging, and the forced displacement applied to the bonding wire can be reduced. As a result, disconnection of the bonding wire can be prevented, and the vibration resistance reliability of the semiconductor device can be improved.

図１は実施形態１の半導体装置の全体斜視図である。FIG. 1 is an overall perspective view of the semiconductor device according to the first embodiment. 図２は図１の半導体装置において、ケースと蓋を分離した状態の半導体装置の全体斜視図である。FIG. 2 is an overall perspective view of the semiconductor device of FIG. 1 with the case and lid separated. 図３は図１のＡ−Ａ線断面図である。3 is a cross-sectional view taken along line AA of FIG. 図４はゲル状充填材を分離壁で分離した実施形態２の半導体装置の斜視図である。FIG. 4 is a perspective view of the semiconductor device of Embodiment 2 in which the gel filler is separated by a separation wall. 図５は分離壁高さをゲル状充填材高さよりも低くした実施形態３の半導体装置の斜視図である。FIG. 5 is a perspective view of the semiconductor device of Embodiment 3 in which the height of the separation wall is lower than the height of the gel filler. 図６は本発明の半導体装置を車両駆動装置の車両後方位置若しくは車両駆動装置の出力軸端部に配置した図である。FIG. 6 is a diagram in which the semiconductor device of the present invention is arranged at the vehicle rear position of the vehicle drive device or at the output shaft end portion of the vehicle drive device.

以下、本発明を適用した具体的な実施形態について図面を参照しながら詳細に説明する。   Hereinafter, specific embodiments to which the present invention is applied will be described in detail with reference to the drawings.

「実施形態１」
図１は実施形態１の半導体装置の全体斜視図、図２は図１の半導体装置において、ケースと蓋を分離した状態の半導体装置の全体斜視図、図３は図１のＡ−Ａ線断面図である。 “Embodiment 1”
1 is an overall perspective view of the semiconductor device of the first embodiment, FIG. 2 is an overall perspective view of the semiconductor device in a state where a case and a lid are separated in the semiconductor device of FIG. 1, and FIG. FIG.

実施形態１の半導体装置１は、図１から図３に示すように、回路基板２に搭載された半導体素子３と、回路基板２上に絶縁体４を介して積層された導体５と、半導体素子３と導体５とを電気的に繋ぐボンディングワイヤ６と、回路基板２を内部に収容するように該回路基板２の周囲に取り付けられたケース７と、ケース７内に充填されて少なくとも半導体素子３とボンディングワイヤ６を保護するゲル状充填材８と、回路基板２に貼り合わされた放熱板９と、ケース７に取り付けられてゲル状充填材８を封止する蓋１０と、を備えている。   As shown in FIGS. 1 to 3, the semiconductor device 1 of Embodiment 1 includes a semiconductor element 3 mounted on a circuit board 2, a conductor 5 stacked on the circuit board 2 via an insulator 4, and a semiconductor A bonding wire 6 electrically connecting the element 3 and the conductor 5; a case 7 attached around the circuit board 2 so as to accommodate the circuit board 2; and at least a semiconductor element filled in the case 7 3 and a gel filler 8 that protects the bonding wire 6, a heat sink 9 bonded to the circuit board 2, and a lid 10 that is attached to the case 7 and seals the gel filler 8. .

半導体素子３は、例えば電気自動車等において電力変換をするためのデバイスとして使用される。具体的には、バッテリーからの直流電源をモーターへの３相交流に変換して流すインバータにおいて、電流変換を行うパワーモジュール中に設けたスイッチング素子の導通、非導通を制御する機能として半導体素子３が使用される。この半導体素子３は、電子回路部が形成された回路基板２の一面２ａとなる部品実装面に実装されている。   The semiconductor element 3 is used as a device for power conversion in, for example, an electric vehicle. Specifically, in an inverter that converts a direct current power source from a battery into a three-phase alternating current to a motor and flows the semiconductor element 3 as a function of controlling conduction and non-conduction of a switching element provided in a power module that performs current conversion. Is used. The semiconductor element 3 is mounted on a component mounting surface that is one surface 2a of the circuit board 2 on which the electronic circuit portion is formed.

導体５は、回路基板２の部品実装面である一面２ａ上に、直接設けられるのではなく絶縁体４を介して設けられている。   The conductor 5 is not provided directly on the one surface 2 a which is a component mounting surface of the circuit board 2 but via the insulator 4.

ボンディングワイヤ６は、半導体素子３に電力を供給する電力供給線として機能する。このボンディングワイヤ６は、半導体素子３と導体５とを電気的に繋ぐように接続されている。具体的には、ボンディングワイヤ６は、一端を半導体素子３に電気的に接続し、他端を導体５に接続させてアーチ状とされている。   The bonding wire 6 functions as a power supply line that supplies power to the semiconductor element 3. The bonding wire 6 is connected to electrically connect the semiconductor element 3 and the conductor 5. Specifically, the bonding wire 6 has an arch shape with one end electrically connected to the semiconductor element 3 and the other end connected to the conductor 5.

ケース７は、回路基板２を内部に収容するように該回路基板２の周囲に取り付けられる平面視長方形をなす枠体として形成されている。このケース７は、内部に半導体素子３や導体５若しくはボンディングワイヤ６を実装させた回路基板２とゲル状充填材８とを充填させるキャビティとしても機能する。   The case 7 is formed as a frame having a rectangular shape in plan view attached to the periphery of the circuit board 2 so as to accommodate the circuit board 2 therein. The case 7 also functions as a cavity that is filled with the circuit board 2 on which the semiconductor element 3, the conductor 5, or the bonding wire 6 is mounted and the gel filler 8.

放熱板９は、半導体素子３が発する熱を放熱するヒートシンクとして機能する。この放熱板９は、前記回路基板２の部品実装面である一面２ａとは反対側の他面２ｂに貼り付けられている。また、放熱板９は、半導体素子３の発熱をケース外へと放熱するため、ケース７の底に取り付けられている。別の見方をすると、放熱板９は、ケース７の底を構成している。   The heat sink 9 functions as a heat sink that dissipates heat generated by the semiconductor element 3. The heat radiating plate 9 is affixed to the other surface 2 b opposite to the one surface 2 a that is the component mounting surface of the circuit board 2. The heat sink 9 is attached to the bottom of the case 7 in order to dissipate the heat generated by the semiconductor element 3 to the outside of the case. From another viewpoint, the heat sink 9 constitutes the bottom of the case 7.

ゲル状充填材８は、回路基板２上に実装された半導体素子３、導体５及びボンディングワイヤ６を覆うようにしてケース７内に充填されている。かかるゲル状充填材８は、これら半導体素子３、導体５及びボンディングワイヤ６が損傷等しないように外力から保護する役目をする。また、ゲル状充填材８は、ケース７内に隙間無く満たされるように充填される。ゲル状充填材８としては、例えばシリコン系、エポキシ系等の粘弾性を呈する樹脂が使用される。ゲル状充填材として使用できる樹脂としては、例えば、シリコン、ウレタン、エポキシがある。   The gel filler 8 is filled in the case 7 so as to cover the semiconductor element 3, the conductor 5 and the bonding wire 6 mounted on the circuit board 2. The gel filler 8 serves to protect the semiconductor element 3, the conductor 5, and the bonding wire 6 from external force so as not to be damaged. Further, the gel filler 8 is filled so that the case 7 is filled with no gap. As the gel filler 8, for example, a resin exhibiting viscoelasticity such as silicon or epoxy is used. Examples of the resin that can be used as the gel filler include silicon, urethane, and epoxy.

蓋１０は、ゲル状充填材８を充填させたケース７の上部に取り付けられている。このケース７の上部が蓋１０で閉蓋されると、ゲル状充填材８が封止されることになる。   The lid 10 is attached to the upper part of the case 7 filled with the gel filler 8. When the upper portion of the case 7 is closed with the lid 10, the gel filler 8 is sealed.

本実施形態の半導体装置では、半導体装置１に発生する（加えられる）振動方向（加振方向）Ｋと、前記ゲル状充填材８の短手方向Ｓを一致させて、前記ゲル状充填材８を前記ケース７内に充填させている。   In the semiconductor device of the present embodiment, the gel-like filler 8 is generated by making the vibration direction (excitation direction) K generated (applied) in the semiconductor device 1 coincide with the short direction S of the gel-like filler 8. Is filled in the case 7.

半導体装置１には、例えば図２に示すように、自動車等に搭載されるエンジンやモーター等の車両駆動装置からの振動やロードノイズがケース７の長手方向ではなく短手方向Ｋに発生する（加振される）ものとする。そうした場合、ケース７内に充填されたゲル状充填材８は、前記半導体装置１に発生する振動に対してそのゲル状充填材８自身の長手方向Ｌには共振し易く、ゲル状充填材８自身の短手方向Ｓには共振し難い特性を有する。   In the semiconductor device 1, for example, as shown in FIG. 2, vibration and road noise from a vehicle drive device such as an engine or a motor mounted in an automobile or the like occurs in the short direction K instead of the longitudinal direction of the case 7 ( To be vibrated). In such a case, the gel filler 8 filled in the case 7 easily resonates in the longitudinal direction L of the gel filler 8 itself with respect to vibration generated in the semiconductor device 1, and the gel filler 8 It has a characteristic that it does not easily resonate in its short direction S.

したがって、半導体装置１に発生する（加振される）振動方向Ｋにゲル状充填材８の短手方向Ｓを一致させれば、ゲル状充填材８の長手方向Ｌに対して短手方向Ｓは共振し難い（揺動し難い）ことから、ゲル状充填材８の揺動を抑制することができる。つまり、本実施形態の半導体装置１によれば、該半導体装置１に発生する振動に共振するゲル状充填材８の共振点が高くなり、ボンディングワイヤ６に加わる強制変位の低減及びボンディングワイヤ内部に発生する応力を低減することができる。したがって、本実施形態の半導体装置１によれば、ボンディングワイヤ６の断線を回避することができ、耐振動強度を大幅に向上させることができる。   Therefore, if the short direction S of the gel filler 8 is made to coincide with the vibration direction K generated (vibrated) in the semiconductor device 1, the short direction S with respect to the long direction L of the gel filler 8. Is less likely to resonate (does not swing), so that the gel filler 8 can be prevented from swinging. In other words, according to the semiconductor device 1 of the present embodiment, the resonance point of the gel filler 8 that resonates with the vibration generated in the semiconductor device 1 is increased, and the forced displacement applied to the bonding wire 6 is reduced and the bonding wire is placed inside the bonding wire. The generated stress can be reduced. Therefore, according to the semiconductor device 1 of the present embodiment, the disconnection of the bonding wire 6 can be avoided and the vibration resistance strength can be greatly improved.

「実施形態２」
図４はゲル状充填材を分離壁で分離した実施形態２の半導体装置の斜視図である。実施形態２の半導体装置では、ゲル状充填材８を分離する分離壁１１をケース７に設けて、前記半導体装置１に発生する振動方向Ｋと前記ゲル状充填材８の短手方向Ｓを一致させたものである。実施形態２では、先の実施形態１とは異なり、ケース７の長手方向を、半導体装置１に発生する振動方向とした。 “Embodiment 2”
FIG. 4 is a perspective view of the semiconductor device of Embodiment 2 in which the gel filler is separated by a separation wall. In the semiconductor device of the second embodiment, a separation wall 11 for separating the gel filler 8 is provided in the case 7 so that the vibration direction K generated in the semiconductor device 1 and the short direction S of the gel filler 8 coincide. It has been made. In the second embodiment, unlike the first embodiment, the longitudinal direction of the case 7 is the vibration direction generated in the semiconductor device 1.

図４では、ケース７の内側にゲル状充填材８を充填させるキャビティー１２Ａ、１２Ｂ、１２Ｃが３つ形成されるように、ケース７の短手方向に沿って２つの分離壁１１を形成している。これら分離壁１１は、何れもケース７の高さと同じ高さを持つ仕切り壁として該ケース７に一体化されている。そのため、各キャビティー１２Ａ、１２Ｂ、１２Ｃ内のゲル状充填材８は、隣接するキャビティーに対して分離された状態にある。   In FIG. 4, two separation walls 11 are formed along the short direction of the case 7 so that three cavities 12A, 12B, and 12C for filling the gel filler 8 inside the case 7 are formed. ing. Each of these separation walls 11 is integrated with the case 7 as a partition wall having the same height as the case 7. Therefore, the gel filler 8 in each cavity 12A, 12B, 12C is in a state of being separated from the adjacent cavities.

なお、各キャビティー１２Ａ、１２Ｂ、１２Ｃには、実施形態１と同様、回路基板２に実装された半導体素子３、導体５及びボンディングワイヤ６が設けれているものとする。   It is assumed that the cavities 12A, 12B, and 12C are provided with the semiconductor element 3, the conductor 5, and the bonding wire 6 mounted on the circuit board 2, as in the first embodiment.

このように構成した実施形態２の半導体装置では、前記分離壁１１をケース７に設けて半導体装置１に発生する振動方向Ｋとゲル状充填材８の短手方向Ｓを一致させているので、実施形態１と同様、ゲル状充填材８の揺動を抑制することができ、ボンディングワイヤ６の断線を回避することができる。なお、ケース７には分離壁１１を設けずに蓋１０に分離壁１１を設けることも考えられるが、そうすると、蓋１０をケース７に組み付ける時にゲル状充填材８及びボンディングワイヤ６が変形するので好ましくない。   In the semiconductor device according to the second embodiment configured as described above, the separation wall 11 is provided in the case 7 so that the vibration direction K generated in the semiconductor device 1 and the short direction S of the gel filler 8 coincide with each other. As in the first embodiment, the swing of the gel filler 8 can be suppressed, and the disconnection of the bonding wire 6 can be avoided. Although it is conceivable to provide the separation wall 11 in the lid 10 without providing the separation wall 11 in the case 7, the gel filler 8 and the bonding wire 6 are deformed when the lid 10 is assembled to the case 7. It is not preferable.

また、実施形態２によれば、ケース７の外形形状に拘わらず、ゲル状充填材８の短手方向Ｓと半導体装置１に発生する振動方向Ｋを分離壁１１によって一致させることができるため、例えケース７の長手方向が半導体装置１に発生する振動方向Ｋであってもゲル状充填材８の揺動を抑制することができる。したがって、本実施形態２によれば、ケース７の外形形状に左右されることなくケース７に分離壁１１を設けることで、半導体モジュールのレイアウトの自由度を高めることができる。   Further, according to the second embodiment, the short direction S of the gel filler 8 and the vibration direction K generated in the semiconductor device 1 can be matched by the separation wall 11 regardless of the outer shape of the case 7. Even if the longitudinal direction of the case 7 is the vibration direction K generated in the semiconductor device 1, the gel filler 8 can be prevented from swinging. Therefore, according to the second embodiment, the degree of freedom in the layout of the semiconductor module can be increased by providing the separation wall 11 in the case 7 without being influenced by the outer shape of the case 7.

「実施形態３」
図５は分離壁高さをゲル状充填材高さよりも低くした実施形態３の半導体装置の斜視図である。なお、図５では、分離壁１１の高さを表すために各キャビティー１２Ａ、１２Ｂ、１２Ｃ内に配置される回路基板２、半導体素子３、導体５及びボンディングワイヤ６の図示は省略してある。 “Embodiment 3”
FIG. 5 is a perspective view of the semiconductor device of Embodiment 3 in which the height of the separation wall is lower than the height of the gel filler. In FIG. 5, the circuit board 2, the semiconductor element 3, the conductor 5, and the bonding wire 6 disposed in the cavities 12 </ b> A, 12 </ b> B, and 12 </ b> C are omitted to represent the height of the separation wall 11. .

実施形態２の半導体装置では、ケース７に設けた分離壁１１の壁高さをケース７の高さと同じとしたが、実施形態３では、その分離壁１１の高さをゲル状充填材８の高さより低くしている。   In the semiconductor device of the second embodiment, the height of the separation wall 11 provided in the case 7 is the same as the height of the case 7, but in the third embodiment, the height of the separation wall 11 is the same as that of the gel filler 8. It is lower than the height.

つまり、この実施形態３の半導体装置では、各キャビティー１２Ａ、１２Ｂ、１２Ｃは、ケース８の高さよりも少し低い分離壁１１で分離されるが、そのキャビティー１２Ａ、１２Ｂ、１２Ｃ内に充填されたゲル状充填材８は分離壁１１の上部で繋がった形態となっている。   That is, in the semiconductor device of the third embodiment, the cavities 12A, 12B, and 12C are separated by the separation wall 11 that is slightly lower than the height of the case 8, but the cavities 12A, 12B, and 12C are filled. The gel filler 8 is connected to the upper part of the separation wall 11.

実施形態３の半導体装置によれば、実施形態２と同様、半導体装置１に発生する振動方向Ｋと各キャビティー１２Ａ、１２Ｂ、１２Ｃ内のゲル状充填材８の短手方向Ｓを分離壁１１によって一致させたことによるボンディングワイヤ６の断線回避効果に加えて、各キャビティー１２Ａ、１２Ｂ、１２Ｃが繋がることでケース７内へのゲル状充填材８の充填工程を一度の作業で行うことができ、生産性を向上させることができる。   According to the semiconductor device of the third embodiment, as in the second embodiment, the vibration direction K generated in the semiconductor device 1 and the short direction S of the gel filler 8 in each of the cavities 12A, 12B, 12C are separated by the separation wall 11. In addition to the effect of avoiding the disconnection of the bonding wire 6 due to the matching, the step of filling the gel filler 8 into the case 7 can be performed by a single operation by connecting the cavities 12A, 12B, 12C. And productivity can be improved.

「実施形態４」
図６は本発明の半導体装置を車両駆動装置の車両後方位置若しくは車両駆動装置の出力軸端部に配置した図である。 “Embodiment 4”
FIG. 6 is a diagram in which the semiconductor device of the present invention is disposed at the vehicle rear position of the vehicle drive device or at the output shaft end portion of the vehicle drive device.

実施形態４では、エンジン１３とモーター１４を一体化した車両駆動装置を搭載した車両１５に、バッテリーからの直流電源をモーターへ３相交流に変換して流すためのインバータの一部を構成する半導体モジュールとして本発明に係る半導体装置１を所定位置に配置する。   In the fourth embodiment, a semiconductor that constitutes a part of an inverter for converting a DC power source from a battery into a three-phase AC current and flowing the same to a vehicle 15 equipped with a vehicle drive device in which an engine 13 and a motor 14 are integrated. The semiconductor device 1 according to the present invention is arranged at a predetermined position as a module.

なお、車両駆動装置の出力軸は、エンジン１３の出力軸、モーター１４の出力軸を指すものとする。   Note that the output shaft of the vehicle drive device refers to the output shaft of the engine 13 and the output shaft of the motor 14.

例えば、前記車両駆動装置の上部Ｈ１に半導体装置１を配置した場合は、車両前高が増すことになり、車載時のレイアウト自由度が低減する。また、前記車両駆動装置の下部Ｈ２に半導体装置１を配置した場合は、車両最低地上高制限に影響し、やはり車載時のレイアウト自由度が低減する。また、前記車両駆動装置の前部Ｈ３に半導体装置１を配置した場合は、衝突安全性確保のため望ましくない。   For example, when the semiconductor device 1 is disposed on the upper portion H1 of the vehicle drive device, the height in front of the vehicle increases, and the degree of layout freedom when mounted on the vehicle is reduced. In addition, when the semiconductor device 1 is disposed in the lower portion H2 of the vehicle drive device, it affects the vehicle minimum ground height limitation, and the degree of layout freedom when mounted on the vehicle is also reduced. Further, when the semiconductor device 1 is disposed in the front portion H3 of the vehicle drive device, it is not desirable for ensuring collision safety.

そこで、実施形態３では、半導体装置１を車両駆動装置の車両後方位置Ｈ４若しくは車両駆動装置の出力軸端部Ｈ５に配置することで、車載時のレイアウト自由度と衝突安全性を確保することができる。   Therefore, in the third embodiment, the semiconductor device 1 is arranged at the vehicle rear position H4 of the vehicle drive device or the output shaft end portion H5 of the vehicle drive device, thereby ensuring the layout freedom and the collision safety when mounted on the vehicle. it can.

本発明は、回路基板上に実装された半導体素子と導体を接続するボンディングワイヤ等をゲル状充填材で覆った半導体装置を自動車等に搭載する技術として利用することができる。   INDUSTRIAL APPLICABILITY The present invention can be used as a technique for mounting a semiconductor device in which a bonding wire or the like connecting a semiconductor element mounted on a circuit board and a conductor is covered with a gel filler on an automobile or the like.

１…半導体装置
２…回路基板
３…半導体素子
４…絶縁体
５…導体
６…ボンディングワイヤ
７…ケース
８…ゲル状充填材
９…放熱板
１０…蓋
１１…分離壁
１２Ａ、１２Ｂ、１２Ｃ…キャビティー
１３…エンジン
１４…モータ
１５…車両 DESCRIPTION OF SYMBOLS 1 ... Semiconductor device 2 ... Circuit board 3 ... Semiconductor element 4 ... Insulator 5 ... Conductor 6 ... Bonding wire 7 ... Case 8 ... Gel filler 9 ... Heat sink 10 ... Lid 11 ... Separation wall 12A, 12B, 12C ... Mold Tee 13 ... Engine 14 ... Motor 15 ... Vehicle

Claims (4)

回路基板上に搭載された半導体素子と、
前記回路基板上に絶縁体を介して積層された導体と、
前記半導体素子と前記導体とを電気的に繋ぐボンディングワイヤと、
前記回路基板を内部に収容するように該回路基板の周囲に取り付けられたケースと、
前記ケース内に充填されて少なくとも前記半導体素子と前記ボンディングワイヤを保護するゲル状充填材と、を備えた半導体装置であって、
前記半導体装置に発生する振動方向と前記ゲル状充填材の短手方向を一致させて、前記ゲル状充填材を前記ケース内に充填した構成とした
ことを特徴とする半導体装置。 A semiconductor element mounted on a circuit board;
A conductor laminated via an insulator on the circuit board;
A bonding wire that electrically connects the semiconductor element and the conductor;
A case attached around the circuit board so as to accommodate the circuit board;
A semiconductor device comprising a gel filler that fills the case and protects at least the semiconductor element and the bonding wire,
The semiconductor device is characterized in that a vibration direction generated in the semiconductor device and a short direction of the gel filler are matched to fill the case with the gel filler. 請求項１に記載の半導体装置であって、
前記ゲル状充填材を分離する分離壁を前記ケースに設けて、前記半導体装置に発生する振動方向と前記ゲル状充填材の短手方向を一致させた
ことを特徴とする半導体装置。 The semiconductor device according to claim 1,
A semiconductor device characterized in that a separation wall for separating the gel filler is provided in the case so that a vibration direction generated in the semiconductor device coincides with a short direction of the gel filler. 請求項２に記載の半導体装置であって、
前記分離壁高さを、前記ゲル状充填材高さより低くした
ことを特徴とする半導体装置。 The semiconductor device according to claim 2,
The semiconductor device according to claim 1, wherein the height of the separation wall is lower than the height of the gel filler. 少なくとも請求項１から請求項３の何れか１項に記載された半導体装置を、エンジンとモータを一体型ユニットとした車両駆動装置の車両後方若しくは該車両駆動装置の出力軸端部に配置した
ことを特徴とする半導体装置。 At least the semiconductor device according to any one of claims 1 to 3 is disposed at a rear side of a vehicle drive device having an engine and a motor as an integrated unit or at an output shaft end portion of the vehicle drive device. A semiconductor device characterized by the above.
JP2009116752A 2009-05-13 2009-05-13 Semiconductor device Pending JP2010267726A (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1084009A (en) * 1996-09-09 1998-03-31 Toshiba Corp Semiconductor device
JP2002299521A (en) * 2001-03-30 2002-10-11 Diamond Electric Mfg Co Ltd Hybrid integrated circuit having vibration-proof protecting structure of bonding wire

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1084009A (en) * 1996-09-09 1998-03-31 Toshiba Corp Semiconductor device
JP2002299521A (en) * 2001-03-30 2002-10-11 Diamond Electric Mfg Co Ltd Hybrid integrated circuit having vibration-proof protecting structure of bonding wire

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