JP2010256754A - Electrooptical apparatus, manufacturing method of electrooptical apparatus, and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve such a problem that under-cut is caused for a protection layer at an end plane of a reflection layer by over-etching, for example, coverage defect is caused without covering the end plane of the reflection layer by an upper layer formed on the protection layer. <P>SOLUTION: A resist formed in an island state and a reflection film other than a region piled on a protection layer 120 in the flat plane are etched by etching liquid. In this embodiment, alkaline solvent containing amine in a non-aqueous solvent is used as the etching liquid. The alkaline solvent containing amine can etch as well as resist the reflection film being a metal film of which the materials is silver or an alloy of silver. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an electro-optical device, a method for manufacturing the electro-optical device, and an electronic apparatus.

  In recent years, a top emission type organic EL device in which an organic EL (electroluminescence) element is formed as a light emitting element on a substrate and light emitted from the light emitting element is extracted on the side opposite to the substrate has been put into practical use as one of electro-optical devices. ing. The top emission method is a method in which a reflective layer is formed between the anode, which is one electrode formed on the substrate side with the light emitting element interposed therebetween, and the light is extracted from the cathode side, which is the other electrode that sandwiches the light emitting element. In this way, the light utilization efficiency is high.

  Further, in the top emission method, silver (Ag) or a silver alloy having a high light reflectivity is used in place of normally used aluminum as a material for forming the reflective layer in order to increase the light extraction efficiency from the cathode. An organic EL device using the above has been proposed (for example, Patent Document 1).

JP 2004-355918 A

  By the way, the reflective layer is usually formed by forming a reflective metal material film (reflective film) on the substrate and then patterning the reflective metal material film into a predetermined shape by a method of etching using a resist as a mask.

  However, when silver or silver alloy is used for the reflective layer, the reflective layer formed by etching silver or silver alloy is always protected by the protective layer not only during the etching process but also after the etching process. It is necessary to be in a state where This is because silver or a silver alloy is prone to oxidation, sulfurization, aggregation, and diffusion, and the reflective surface is migrated by heat treatment, etching treatment, sputtering treatment, CVD treatment, etc. in the subsequent manufacturing process of the organic EL device. This is because the accompanying roughness is caused and the reflectance is lowered.

  It is also a necessary subject to control the etching of silver or a silver alloy so that the reflective layer is formed in a predetermined shape. In particular, it is important that the silver or the silver alloy is not over-etched greatly at the end face of the reflective layer. This is because if the over-etching causes a large undercut with respect to the protective layer on the end surface of the reflective layer, for example, the upper layer film formed on the protective layer may not cover the end surface of the reflective layer, resulting in poor coverage. Because there is.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 An electro-optical device in which a reflective layer that reflects light and a protective layer that protects a reflective surface of the reflective layer are formed on a substrate, and the reflective layer is made of silver or silver The protective layer is formed of an alloy, and the protective layer is formed of a transparent inorganic insulator, and is laminated on the surface opposite to the substrate with respect to the reflective layer so as to substantially overlap the reflective layer in plan view. It is characterized by.

  According to this configuration, since the protective layer is laminated so as to overlap the reflective layer, the reflective layer can be formed by etching a metal film made of silver or a silver alloy, for example, using the protective layer as a mask. . In addition, since the protective layer made of an inorganic insulator is laminated on the reflective layer, for example, when the reflective layer is formed by etching, the reflective surface can be protected from the etching solution. Therefore, the reflective layer can be formed without the reflective surface being roughened by etching.

  Application Example 2 In the electro-optical device, the protective layer is formed using silicon nitride or silicon oxide as a material for the inorganic insulator.

  According to this configuration, silicon nitride or silicon oxide is easy to form and is suitable as an inorganic insulator. Moreover, it can be expected that the material is difficult to be etched by the etchant.

  Application Example 3 A method for manufacturing an electro-optical device, in which a reflective layer that reflects at least light and a protective layer that protects the reflective surface of the reflective layer is formed on a substrate, and the silver is formed on the substrate. Alternatively, a step of forming a reflective film made of a silver alloy material, a step of forming a protective film made of an inorganic insulator on the reflective film, and a resist having a predetermined pattern shape on the protective film Using the resist as a mask, forming the protective layer by removing the protective film other than the resist portion by a dry etching process, the resist, and the reflective film exposed by the dry etching process And a step of forming the reflective layer by simultaneously removing them by a wet etching process.

  According to this method, simultaneously with the removal of the resist, the reflective film made of silver or a silver alloy is removed with the etching solution. Therefore, even if the resist is removed, the formed protective layer remains on the reflective film, so that a reflective layer that reflects light can be formed without damaging the reflective function. Moreover, since silver or a silver alloy is etched by the resist etching solution, the etching rate can be controlled to be lower than that of the silver etching solution. As a result, the etching of silver or a silver alloy can be controlled so that the silver or silver alloy is not over-etched greatly at the end face of the reflective film.

  Application Example 4 In the method of manufacturing the electro-optical device, the protective film is formed using silicon nitride or silicon oxide as a material as the inorganic insulator.

  According to this method, silicon nitride or silicon oxide is easy to form and is suitable as an inorganic insulator. Further, it can be expected that the material is difficult to be etched by a resist etching solution.

  Application Example 5 In the method of manufacturing the electro-optical device, the etching solution used in the wet etching process is a non-aqueous solvent and an alkaline solvent solution containing an amine.

  According to this method, the alkali solvent liquid containing an amine can etch a metal film made of silver or a silver alloy simultaneously with the resist.

  Application Example 6 Electronic equipment including the electro-optical device.

  According to this configuration, it is possible to provide an electronic apparatus in which the reflective layer has a good reflection efficiency and thus a bright image display can be obtained. As a result, power consumption of the electronic device can be suppressed.

  Application Example 7 Electronic equipment including an electro-optical device manufactured by the method for manufacturing an electro-optical device.

  According to this configuration, it is possible to provide an electronic apparatus in which the reflective layer has a good reflection efficiency and thus a bright image display can be obtained. As a result, power consumption of the electronic device can be suppressed. In addition, since the reflective film made of silver or a silver alloy is etched at the same time as the resist, it is possible to provide an electronic device that has few manufacturing steps and suppresses an increase in cost.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an explanatory diagram showing a mode in which an organic EL panel as an electro-optical device according to an embodiment of the present invention is provided in a mobile phone as an embodiment of an electronic apparatus. The schematic diagram which showed the whole layout of the organic electroluminescent panel with the circuit structure. It is a schematic diagram which shows the structure of each pixel of R, G, B formed in the organic electroluminescent panel, (a) is a top view, (b) is sectional drawing. The schematic cross section which expanded and displayed about each functional layer formed in the board | substrate side. The process flowchart about the method of forming a reflective layer by an etching. (A)-(d) is a schematic diagram which shows the state of an etching process. (A)-(c) is a schematic diagram which shows the state of an etching process. The graph explaining an etching rate. The schematic diagram which shows the structure of the organic EL element of a 1st modification. The schematic diagram which showed the cross section of the liquid crystal panel whose pixel area | regions are all reflective display areas in the 2nd modification.

  Hereinafter, the present invention will be described based on examples. It should be noted that the drawings used in the description of the present embodiment may be exaggerated as necessary for the description, and need not necessarily indicate the actual size and length.

  FIG. 1 is an explanatory diagram showing a mode in which an organic EL (electroluminescence) panel 100 as an electro-optical device according to an embodiment of the present invention is provided in a mobile phone 1 as an embodiment of an electronic apparatus. . The organic EL panel 100 of the present embodiment is provided with an organic EL element that is a self-luminous element as a light emitting element, and can be thinned without requiring a backlight. The display device is suitable for electronic devices. Therefore, the organic EL panel 100 of this embodiment is effective as a display device mounted on a mobile phone.

  In this embodiment, the organic EL panel 100 includes a plurality of pixels each capable of emitting light of any one of wavelengths corresponding to colors of R (red), G (green), and B (blue). And a predetermined color image such as an image or a character is displayed. In this embodiment, in order to simplify the following description, as shown in FIG. 1, the organic EL panel 100 includes 4 pixels in the column direction (vertical direction in the drawing) and 6 pixels in the row direction (horizontal direction in the drawing). It is assumed that a total of 24 pixels are formed. Needless to say, in practice, many pixels such as several hundred pixels to several thousand pixels are formed in each matrix direction.

  Next, with respect to the organic EL panel 100 of the present embodiment, a specific configuration thereof will be sequentially described with reference to FIG.

  FIG. 2 is a schematic diagram showing the entire layout of the organic EL panel 100 together with the circuit configuration. The organic EL panel 100 has pixels (not shown) formed on the substrate 10 and having a substantially rectangular shape of the anode 130 as a light emitting region. The pixels are regularly arranged in a predetermined region on the substrate 10 in the row direction and the column direction according to the arrangement of the anodes 130. The shape of the anode 130 may be other than a rectangular shape. Of course, the arrangement of the anodes 130, that is, the arrangement of the pixels may be irregular.

  The organic EL panel 100 is an active matrix device that is driven to emit light for each pixel. That is, in each pixel, an organic EL element and a driving element for driving the organic EL element to emit light are formed. As shown in FIG. 2, the drive element includes TFTs (thin film transistors) 14 and 15 and a storage capacitor 16. In this embodiment, it is assumed that the organic EL panel 100 has a top emission structure. Therefore, the driving element is formed on the substrate 10 side with respect to the reflective layer at a position overlapping with the reflective layer described later.

  A scanning line driving circuit 11, a data line driving circuit 12, and a power feeding terminal 13 are formed at the end of the substrate 10. The scanning line Gate is formed from the scanning line drive circuit 11, the data line Sig is formed from the data line drive circuit 12, and the power supply line Com connected to the power supply terminal 13 is formed in each pixel. The element is wired as shown in the figure, and the organic EL element is driven to emit light.

  First, the scanning line Gate is connected to the gate of the TFT 14, and the TFT 14 is controlled to be turned on / off according to a voltage signal or a current signal supplied via the scanning line Gate. When the TFT 14 is turned on, a voltage corresponding to the image signal supplied from the data line Sig connected to the source of the TFT 14 is held in the holding capacitor 16 by the power supplied from the power supply line Com. Then, the voltage held in the holding capacitor 16 is applied to the gate of the TFT 15 to turn on the TFT 15. The drain and the source of the TFT 15 are respectively connected to the power supply line Com and the anode 130, and a current corresponding to the voltage held in the storage capacitor 16, that is, a current corresponding to an image signal is supplied to the anode 130 via the power supply line Com. Applied.

  The organic EL element formed in each pixel emits light by passing a current between the anode 130 and the cathode 170 (two-dot chain line in the drawing) formed over the surface of all the pixels (light emitting regions). To do. Accordingly, when the current applied to the anode 130 flows to the cathode 170, the organic EL element emits light with brightness according to the image signal. That is, a planar region in which the anode 130, the organic EL element, and the cathode 170 are stacked to form a light emitting region where current flows. As a result, this light emitting region is approximately the region of the anode 130. The cathode 170 is grounded at the outer peripheral end.

  Next, a specific pixel configuration in the organic EL panel 100 will be described with reference to FIG. FIG. 3 is a schematic diagram illustrating a configuration of each of R, G, and B pixels formed on the organic EL panel 100. 3A is a plan view showing a portion in which the light emitting regions of the R pixel, the G pixel, and the B pixel are arranged in the row direction (lateral direction in the drawing) among the pixels shown in FIG. (B) is the schematic cross section which showed typically the AA cross section in Fig.3 (a).

  As shown in FIG. 3A, each pixel has a light emitting region in a pixel region defined by partition walls (hatched portions in the drawing). As described above, the light emitting region is a region of the anode 130 and has a substantially rectangular shape. In the pixel area of each pixel, as shown in FIG. 3B, color filters in which R, G, and B color filters are arranged in a predetermined arrangement are arranged so as to overlap each light emitting area. .

  The color filter is formed by forming an R filter, a G filter, and a B filter that are divided by a light shielding region BM on a glass plate. White light emitted from the light emitting region is emitted by the R filter, the G filter, and the B filter. , Converted into R light, G light, and B light, respectively. In this way, light of a color corresponding to the brightness of each light emitting area is emitted from the color filter, thereby forming R pixels, G pixels, and B pixels, respectively, and the organic EL panel 100 displays a color image.

  Although the specific description is omitted because it is already a well-known structure, the color filter has a predetermined interval with respect to the substrate 10 on which the organic EL element is formed, and a resin or the like is interposed at the outer peripheral portion thereof. Sealed and bonded. Further, a protective film for preventing the outflow of gas from each color filter and the light shielding region BM is formed as necessary.

  Next, the light emitting area will be described. As shown in FIG. 3B, the light emitting region is configured by the anode 130, the cathode 170, and the organic EL element 140. That is, when a current flows through the organic EL element 140 sandwiched between the anode 130 and the cathode 170, a light emitting region where the organic EL element 140 emits light is formed.

  In the organic EL element 140, functional layers such as a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer (not shown) are sequentially stacked from the anode 130 side, and the R pixel, the G pixel, and the B pixel are all the same layer. It is formed with a thickness. Each functional layer is made of an organic material such as an amine organic material. The light emitting layer is configured such that a blue light emitting functional layer and a yellow light emitting functional layer are laminated, and white light is emitted from the light emitting region.

  In addition, since the organic EL panel 100 has a top emission structure, the surface of the organic EL element 140 facing the substrate 10 with respect to the anode 130 is arranged so that the emitted light of the organic EL element 140 is emitted from the cathode 170 side. A reflective layer 110 is formed. On the opposite side of the reflective layer 110 from the substrate 10, a protective layer 120 formed for the purpose of protecting the reflective surface of the reflective layer 110 is laminated.

  In the organic EL panel 100 of the present embodiment, the reflective layer 110 has a region shape that substantially overlaps the anode 130 in a plan view, and is silver or a silver alloy containing silver as a main component (for example, an alloy of silver and palladium, Silver and copper alloy). Silver is a material having a high light reflectivity, and reflects light emitted from the organic EL element 140 through the anode 130 and emitted toward the substrate 10 to increase the amount of light emitted from the cathode 170 side. be able to.

  The anode 130 is a conductive layer formed of a light-transmitting material such as ITO (indium tin oxide) or IZO (indium zinc oxide). Similarly, the cathode 170 is a conductive layer formed of a light-transmitting material such as ITO or IZO. Note that even a metal material other than a light-transmitting material such as ITO or IZO can be used as a cathode material if it is formed thin enough to transmit light.

  By the way, the drive element for driving the organic EL element 140 to emit light is formed at a position overlapping the reflective layer 110 in a planar manner as described above. Specifically, as shown in FIG. 3B, the driving element is placed inside the device layer 20 which is located between the reflective layer 110 and the substrate 10 and whose entire surface is flattened by a flattening film (not shown). TFTs 14 and 15 and a storage capacitor 16 are formed. The source electrode of the TFT 15 is connected to the anode 130 through a contact hole (not shown) formed in the device layer 20.

  Now, in the organic EL panel 100 of the present embodiment, each functional layer, particularly the reflective layer 110, the protective layer 120, and the anode 130 formed on the substrate 10 will be described in more detail with reference to FIG. FIG. 4 is a schematic cross-sectional view in which each functional layer formed on the substrate 10 side in FIG.

  As shown in the drawing, the anodes 130 formed in the R pixel, the G pixel, and the B pixel are each formed of a different number of conductive layers. In this embodiment, the R pixel is formed of three layers, the G pixel is formed of two layers, and the B pixel is formed of one layer. Thus, by making the number of conductive layers formed different, the distance between the cathode 170 and the reflective layer 110 is the shortest in the B pixel and the longest in the R pixel. By doing so, in each of the R pixel, the G pixel, and the B pixel, adjustment is performed so that the wavelengths of the R light, the G light, and the B light resonate between the reflective layer 110 and the cathode 170.

  As described above, the drive element is formed in the device layer 20. Here, as an example, the TFT 15 formed corresponding to the R pixel is illustrated. Of course, although not shown and described, drive elements are similarly formed in the G pixel and the B pixel.

  The TFT 15 has a drain electrode 15d connected to the drain region of the semiconductor layer 15a formed on the substrate 10, a source electrode 15s connected to the source region of the semiconductor layer 15a, and a gate insulating film covering the semiconductor layer 15a. The gate electrode 15g is formed. The drain electrode 15d and the source electrode 15s are formed on the interlayer insulating film, and the drain electrode 15d is connected to a power supply line Com (not shown). The source electrode 15s is connected to the anode 130 via a cover layer formed so as to cover the source electrode 15s (drain electrode 15d) and a contact hole provided in a planarization film formed on the cover layer. Yes.

  In this embodiment, in the reflective layer 110 formed using silver or a silver alloy as a material, a transparent inorganic insulator is used as a material so as to substantially overlap the reflective layer in plan view in order to suppress deterioration of the reflective surface. The protective layer 120 is stacked.

  According to this configuration, since the protective layer 120 is stacked so as to overlap the reflective layer 110, the reflective layer 110 is formed by etching a reflective film made of silver or a silver alloy, for example, using the protective layer 120 as a mask. can do. Further, since the protective layer 120 made of an inorganic insulator resistant to an etching solution for etching silver or a silver alloy is laminated on the reflective layer 110, for example, the reflective layer 110 is formed by etching. In this case, the reflective surface can be protected from the etching solution. Therefore, the reflective layer 110 can be formed without the reflective surface being roughened by etching. In addition, since the protective layer 120 is formed so as to substantially overlap the reflective layer 110 in a plan view without greatly overetching silver or a silver alloy on the end face of the reflective layer 110, for example, formed on the protective layer 120 The probability that the upper layer film that covers the surface of the reflective layer 110 cannot cover the end surface and a coverage defect occurs is also reduced.

  Now, a manufacturing method by etching of the reflective layer 110, which is a method having the above-described effects, will be described according to a process flowchart shown in FIG. 5 with reference to FIGS. 6 and 7 are schematic diagrams showing the state of the process in FIG. 5 as appropriate.

  As shown in FIG. 5, first, in step S100, a reflection film is formed. Specifically, as shown in FIG. 6A, a reflective film made of silver or a silver alloy is formed on the planarizing film formed on the device layer 20 by a sputtering method, a vacuum evaporation method, a CVD method, or the like. It is formed by deposition.

  Next, a protective film formation process is performed in step S101. Specifically, as shown in FIG. 6B, a protective film made of an inorganic insulator is deposited on the formed reflective film by sputtering, vacuum evaporation, CVD, or the like. In this embodiment, it is preferable to use silicon nitride or silicon oxide as the inorganic insulator. Since silicon nitride or silicon oxide is widely used in semiconductor processes, it can be easily formed and is suitable as an inorganic insulator. Further, it is a material that is resistant to a resist etching solution and is not easily etched in a resist etching process to be described later.

  Next, a resist formation process is performed in step S102. Specifically, as shown in FIG. 6C, for example, a resist material is applied and formed on the formed protective film by a spin coating method, a printing method, or the like. In this embodiment, a positive type photoresist from which an exposed portion is removed is used as the resist material.

  Next, a resist patterning process is performed in step S103. Specifically, the applied resist is exposed to a portion other than a predetermined shape corresponding to the planar shape of the reflective layer 110, and the exposed portion is developed and removed. FIG. 6D shows the resist formation state after development. As shown in the drawing, island-shaped resists having a predetermined pattern shape are formed at positions corresponding to R pixels, G pixels, and B pixels.

  Next, in step S104, a dry etching process is performed. Specifically, as shown by an arrow in FIG. 7A, using a resist formed in an island shape as a mask, an etching gas is exposed to dry-etch the protective film made of an inorganic insulator. In this embodiment, since the inorganic insulator is silicon nitride or silicon oxide, a fluorine-based etching gas is used. Note that the protective film may be etched by ions or radicals.

  Subsequently, a protective layer forming process is performed in step S105. Specifically, the protective layer 120 is formed by dry etching until the portion of the protective film where the resist is not formed in the dry etching process in step S104 is completely removed. The formation state of the protective layer 120 is shown in FIG. As shown in the drawing, an island-shaped protective layer 120 having a predetermined pattern shape is formed at a position corresponding to the R pixel, G pixel, and B pixel so as to substantially overlap the resist. In this dry etching process, it is possible that the reflective film is partially etched by dry etching until the protective film is completely removed, but the part of the reflective film where the resist is not formed, Since it is removed in the next step, no particular problem occurs.

  Next, a wet etching process is performed in step S106. Here, the resist formed in an island shape and the reflective film other than the region overlapping the protective layer 120 in a planar manner are simultaneously etched with an etchant. By doing so, as compared with the case where the resist and the reflective film are etched separately, the number of manufacturing steps is small, and an increase in cost can be suppressed. In this embodiment, an alkaline solvent liquid containing an amine with a non-aqueous solvent is used as the etching liquid for simultaneously etching the resist and the reflective film. The alkaline solvent liquid containing amine can etch the reflective film, which is a metal film made of silver or a silver alloy, simultaneously with the resist.

  Subsequently, a reflective layer forming process is performed in step S107. Specifically, in the wet etching process in step S106, the reflective layer 110 is formed by performing wet etching until the reflective film and the resist other than the planar region where the protective layer 120 is laminated are completely removed. The formation state of the reflective layer 110 is shown in FIG. As illustrated, an island-shaped reflective layer 110 having a predetermined pattern shape is formed so as to substantially overlap the protective layer 120 in a position corresponding to the R pixel, G pixel, and B pixel.

  In this embodiment, in this wet etching process, it is possible to control so that over-etching in which the reflective film is etched deep inside the protective layer 120 at the end of the protective layer 120 does not occur. That is, when a reflective film made of silver or a silver alloy is etched using a dedicated etchant, the etching rate is as high as 70 Å / sec to 350 Å / sec (4200 Å / min to 21000 Å / min), for example. is there. For this reason, the etching control becomes difficult, and for example, the side etch amount may become a desired amount (for example, 0.5 μm) or more.

  On the other hand, the etching solution for etching the reflective film made of silver or a silver alloy of this embodiment is a resist stripping solution containing a non-aqueous amine. Therefore, while the etching rate of the resist is about 30000 mm / min, the etching rate for silver or a silver alloy is about 100 mm / min in the dipping process as shown in FIG. Is about 160 Å / min.

  Thus, since the etching rate of the resist is much faster than the etching rate of the reflective film made of silver or a silver alloy material, by using these dipping treatments and shower treatments as appropriate, silver or It is possible to control the etching process of the reflective film made of a silver alloy. As a result, the etching control of the reflective film made of silver or a silver alloy is facilitated. For example, the side etch amount can be controlled to a desired amount (for example, within 0.5 μm). Therefore, the reflective layer 110 can be formed so as to substantially overlap.

  Thereafter, the anode 130, the partition, the organic EL element 140, and the cathode 170 are formed in this order on the substrate 10, and each functional layer constituting the organic EL panel 100 is formed on the substrate 10. For forming each functional layer, a well-known manufacturing method can be used. Therefore, description of these manufacturing methods is omitted here.

  As described above, according to the method for forming the reflective layer 110 of the present embodiment, the protective layer 120 is laminated so as to overlap the reflective layer 110, so that, for example, the reflective surface is not roughened by etching. 110 can be molded. Further, for example, the probability that an upper layer film formed on the protective layer 120 cannot cover the end face of the reflective layer 110 and a coverage defect occurs is also reduced.

  The present invention has been described with reference to the embodiments. However, the present invention is not limited to these embodiments, and can of course be implemented in various forms without departing from the spirit of the present invention. is there. Hereinafter, a modification will be described.

(First modification)
In the above embodiment, the organic EL device is described as being implemented for an organic EL panel that emits white light, and is converted into RGB colors by a color filter. However, the present invention is not limited to this. It is. For example, the present invention can be implemented even when the organic EL element is an organic EL panel that emits different colors of RGB. This modification will be described with reference to FIG. FIG. 9 is a schematic diagram showing the structure of the organic EL element of this modification. The device layer 20 formed on the substrate 10 is not shown.

  As shown in the figure, a partition made of an organic material having no conductivity is formed around the anode 130 formed on the substrate 10, and an R light emitting layer having a different emission color, G is formed in a region surrounded by the partition. A light emitting layer and a B light emitting layer are formed. A cathode 170 is formed so as to cover the entire light emitting layer including the partition walls, and organic EL elements 140 that emit R light, G light, and B light are respectively configured. Therefore, by flowing a predetermined current between the anode 130 and the cathode 170, each organic EL element 140 emits RGB emission colors corresponding to the light emitting layer, and each of the R pixel, the G pixel, and the B pixel. It becomes.

  In this modification, the light emitting layer is surrounded by a partition wall with a functional liquid for forming a functional layer constituting the organic EL element 140, such as a functional liquid having a fluorescent material exhibiting each color of R, G, and B as a solute. A film having a predetermined thickness is formed by spraying on the region and performing a heat treatment such as vacuum drying.

  On the other hand, on the substrate 10 side of the anode 130, a protective layer 120 and a reflective layer 110 having a planar area substantially the same as the light emitting area of each of the R pixel, G pixel, and B pixel are formed in the same manner as in the above embodiment. It is formed so that it almost overlaps.

  According to this modification, the reflective layer 110 is formed so as to prevent a large undercut from occurring with respect to the protective layer 120, so that the anode 130 can reliably cover the end face of the reflective layer 110. it can. As a result, the probability that the end face cannot be covered and the coverage failure occurs is reduced. Further, the reflective surface of the reflective layer 110 is not roughened by a heat treatment or an etching process, a sputtering process, a CVD process or the like in the subsequent manufacturing process such as when the organic EL element 140 is formed. Therefore, it is possible to maintain a high reflectance.

(Second modification)
In the above embodiment, the organic EL panel 100 is used as the electro-optical device. However, the present invention is not limited to this. The present invention can be applied to any electro-optical device provided with a reflective layer. For example, a liquid crystal panel may be used as the electro-optical device. This modification will be described with reference to FIG.

  FIG. 10 is a schematic diagram showing a cross section of the liquid crystal panel 200 in which the pixel areas are all reflective display areas. As shown in the figure, the liquid crystal panel 200 has a configuration in which a liquid crystal layer 240 is sandwiched between an element substrate 210 and a counter substrate 230. The liquid crystal layer 240 is a horizontal electric field type liquid crystal panel called an FFS (Fringe-Field Switching) type in which alignment control of liquid crystal molecules is performed by an electric field applied in a horizontal direction along the substrate surface of the element substrate 210.

  The counter substrate 230 has a polarizing plate 245 on the surface opposite to the liquid crystal layer 240 with respect to the flat plate 231 made of a glass material, and a light shielding layer 232, a filter layer 233, and an overcoat layer 234 on the surface on the liquid crystal layer 240 side. The alignment film 236 is sequentially formed. On the other hand, the element substrate 210 has a polarizing plate 244 on the surface opposite to the liquid crystal layer 240 with respect to the flat plate 214 made of a glass material, and a gate electrode 220g, a power supply line Com, and gate insulation on the surface on the liquid crystal layer 240 side. A layer 215, a semiconductor layer 220a, a source electrode 220s and a drain electrode 220d, an interlayer insulating layer 216, a planarization layer 217, a common electrode 213, an insulating layer 218, a second insulating layer 218s, a pixel electrode 211, and an alignment film 219 are sequentially formed. It is a thing.

  As illustrated, a transistor 220 is formed by the drain electrode 220d, the gate electrode 220g, the source electrode 220s, and the semiconductor layer 220a. The drain electrode 220d is electrically connected to the data line Sig, and the gate electrode 220g is electrically connected to the scanning line Gate. In the present modification, the scanning line Gate, the power supply line Com, and the data line Sig have the same functions as those in the above-described embodiment. Omitted.

  A voltage supplied from the data line Sig is applied to the pixel electrode 211 through the contact hole CH1 and connected to the source electrode 220s. On the other hand, the common electrode 213 is connected to the power supply line Com through the contact hole CH2, and an electric circuit is formed so that a common voltage (ground potential) supplied from the power supply line Com is applied. ing. As a result, a voltage is generated between the pixel electrode 211 and the common electrode 213, and a liquid crystal molecule is driven by applying a horizontal electric field to the liquid crystal layer 240.

  In the present modification, the common electrode 213 is configured to function as a reflective layer. That is, the common electrode 213 is formed using silver or a silver alloy (for example, APC (silver-palladium-copper alloy) or the like) as a material. A protective film 213a is laminated on the common electrode 213 so that the planar regions substantially overlap.

  Therefore, according to the liquid crystal panel 200 of this modification, the insulating layer 218 (and further the second insulating layer 218s) formed so as to cover the protective film 213a reliably covers the end face of the common electrode 213 that is a reflective layer. can do. As a result, it is possible to maintain a high reflectance without roughening the reflective surface of the common electrode 213 by sputtering process, CVD process, or the like in the subsequent manufacturing process such as when the pixel electrode 211 is formed.

(Other variations)
In the above embodiment, silicon nitride or silicon oxide is used as the material for the inorganic insulator forming the protective layer 120, but it is of course not limited thereto. The protective layer 120 may be made of other inorganic insulators as long as the material has transparency and resists the etching solution in the resist etching process.

  In the above embodiment, the pixel emits R light, G light, and B light. However, the present invention is not limited to this, and light of another color (for example, yellow) may be emitted. Alternatively, only a single color may be emitted. Further, in order to form a resonance structure in which each color light resonates in each pixel, the number of conductive layers (anodes) is made different. However, the number of conductive layers to be formed is not limited to this. Layer).

  Moreover, in the said Example, although the mobile telephone was illustrated as an electronic device, of course, it is not restricted to this. For example, it may be a projector, a digital camera, a digital video camera, a television, a mobile computer, an audio device, or the like. When the electronic apparatus is a projector, the electro-optical device to be incorporated is preferably the liquid crystal panel 200 that performs display using external light as in the above modification.

  DESCRIPTION OF SYMBOLS 1 ... Mobile phone, 10 ... Board | substrate, 11 ... Scan line drive circuit, 12 ... Data line drive circuit, 13 ... Feeding terminal, 14, 15 ... TFT, 15a ... Semiconductor layer, 15d ... Drain electrode, 15g ... Gate electrode, 15s DESCRIPTION OF SYMBOLS ... Source electrode 16 ... Retention capacity 20 ... Device layer 100 ... Organic EL panel 110 ... Reflective layer 120 ... Protective layer 130 ... Anode 140 ... Organic EL element 170 ... Cathode 200 ... Liquid crystal panel 210 ... element substrate, 211 ... pixel electrode, 213 ... common electrode, 213a ... protective film, 214 ... flat plate, 215 ... gate insulating layer, 216 ... interlayer insulating layer, 217 ... planarization layer, 218 ... insulating layer, 218s ... second Insulating layer, 219 ... Alignment film, 220 ... TFT, 220a ... Semiconductor layer, 220d ... Drain electrode, 220g ... Gate electrode, 220s ... Source electrode, 230 ... Opposing group , 231 ... flat, 232 ... light-shielding layer, 233 ... filter layer, 234 ... overcoat layer, 236 ... orientation film, 240 ... liquid crystal layer, 244 ... polarization plate, 245 ... polarizer.

Claims (7)

An electro-optical device in which a reflective layer that reflects light and a protective layer that protects a reflective surface of the reflective layer are formed on a substrate,
The reflective layer is formed using silver or a silver alloy as a material,
The protective layer is made of a transparent inorganic insulator, and is laminated on the surface opposite to the substrate with respect to the reflective layer so as to substantially overlap the reflective layer in plan view. Electro-optic device. The electro-optical device according to claim 1,
The electro-optical device, wherein the protective layer is made of silicon nitride or silicon oxide as the inorganic insulator. A method for manufacturing an electro-optical device, in which a reflective layer that reflects at least light and a protective layer that protects a reflective surface of the reflective layer are formed on a substrate,
Forming a reflective film made of silver or a silver alloy on the substrate;
Forming a protective film made of an inorganic insulator on the reflective film;
Forming a resist having a predetermined pattern shape on the protective film;
Forming the protective layer by removing the protective film other than the resist portion by a dry etching process using the resist as a mask;
A method of manufacturing an electro-optical device, comprising: removing the resist and the reflective film exposed by the dry etching process simultaneously by a wet etching process to form the reflective layer. A method for manufacturing the electro-optical device according to claim 3,
The method for manufacturing an electro-optical device, wherein the protective film is formed using silicon nitride or silicon oxide as the inorganic insulator. A method of manufacturing an electro-optical device according to claim 3 or 4,
An etching method used in the wet etching process is a non-aqueous solvent and an alkaline solvent solution containing an amine.   An electronic apparatus comprising the electro-optical device according to claim 1.   An electronic apparatus including the electro-optical device manufactured by the method for manufacturing an electro-optical device according to claim 3.

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