JP2010254608A - Phthalimide compound, naphthalimide compound, naphthalic anhydride compound, electron transporting material including these compounds and organic thin film solar cell - Google Patents
Phthalimide compound, naphthalimide compound, naphthalic anhydride compound, electron transporting material including these compounds and organic thin film solar cell Download PDFInfo
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- JP2010254608A JP2010254608A JP2009105339A JP2009105339A JP2010254608A JP 2010254608 A JP2010254608 A JP 2010254608A JP 2009105339 A JP2009105339 A JP 2009105339A JP 2009105339 A JP2009105339 A JP 2009105339A JP 2010254608 A JP2010254608 A JP 2010254608A
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- solar cell
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 62
- 239000000463 material Substances 0.000 title claims abstract description 54
- 239000010409 thin film Substances 0.000 title claims abstract description 39
- -1 Phthalimide compound Chemical class 0.000 title description 62
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 19
- 125000003118 aryl group Chemical group 0.000 claims abstract description 14
- 125000003342 alkenyl group Chemical group 0.000 claims abstract description 10
- 125000003282 alkyl amino group Chemical group 0.000 claims abstract description 10
- 125000001769 aryl amino group Chemical group 0.000 claims abstract description 10
- 125000004104 aryloxy group Chemical group 0.000 claims abstract description 10
- 125000004093 cyano group Chemical group *C#N 0.000 claims abstract description 10
- 125000001072 heteroaryl group Chemical group 0.000 claims abstract description 10
- 125000000304 alkynyl group Chemical group 0.000 claims abstract description 9
- 125000001624 naphthyl group Chemical group 0.000 claims abstract description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 5
- 239000000872 buffer Substances 0.000 claims description 13
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 10
- 125000005843 halogen group Chemical group 0.000 claims description 8
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 5
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 40
- 125000003545 alkoxy group Chemical group 0.000 abstract description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052736 halogen Inorganic materials 0.000 abstract description 2
- 150000002367 halogens Chemical class 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 150000002431 hydrogen Chemical class 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 78
- 239000010408 film Substances 0.000 description 23
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 22
- 239000007787 solid Substances 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 239000002994 raw material Substances 0.000 description 12
- 238000005160 1H NMR spectroscopy Methods 0.000 description 11
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 10
- 239000012299 nitrogen atmosphere Substances 0.000 description 10
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 10
- 239000011541 reaction mixture Substances 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 9
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- 238000003786 synthesis reaction Methods 0.000 description 9
- 239000003153 chemical reaction reagent Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000002244 precipitate Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 6
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical group C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 6
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 6
- 229940126062 Compound A Drugs 0.000 description 5
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 5
- GRSMWKLPSNHDHA-UHFFFAOYSA-N Naphthalic anhydride Chemical group C1=CC(C(=O)OC2=O)=C3C2=CC=CC3=C1 GRSMWKLPSNHDHA-UHFFFAOYSA-N 0.000 description 5
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 5
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 5
- 125000004122 cyclic group Chemical group 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 150000002894 organic compounds Chemical class 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 4
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 4
- XJHABGPPCLHLLV-UHFFFAOYSA-N benzo[de]isoquinoline-1,3-dione Chemical group C1=CC(C(=O)NC2=O)=C3C2=CC=CC3=C1 XJHABGPPCLHLLV-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 4
- LVTJOONKWUXEFR-FZRMHRINSA-N protoneodioscin Natural products O(C[C@@H](CC[C@]1(O)[C@H](C)[C@@H]2[C@]3(C)[C@H]([C@H]4[C@@H]([C@]5(C)C(=CC4)C[C@@H](O[C@@H]4[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@@H](O)[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@H](CO)O4)CC5)CC3)C[C@@H]2O1)C)[C@H]1[C@H](O)[C@H](O)[C@H](O)[C@@H](CO)O1 LVTJOONKWUXEFR-FZRMHRINSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 4
- KZPYGQFFRCFCPP-UHFFFAOYSA-N 1,1'-bis(diphenylphosphino)ferrocene Chemical compound [Fe+2].C1=CC=C[C-]1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=C[C-]1P(C=1C=CC=CC=1)C1=CC=CC=C1 KZPYGQFFRCFCPP-UHFFFAOYSA-N 0.000 description 3
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 3
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical group O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 150000001555 benzenes Chemical group 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
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- 239000000975 dye Substances 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 150000003003 phosphines Chemical class 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000010992 reflux Methods 0.000 description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 description 3
- 125000001424 substituent group Chemical group 0.000 description 3
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- QPFMBZIOSGYJDE-UHFFFAOYSA-N 1,1,2,2-tetrachloroethane Chemical compound ClC(Cl)C(Cl)Cl QPFMBZIOSGYJDE-UHFFFAOYSA-N 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 2
- LVEYOSJUKRVCCF-UHFFFAOYSA-N 1,3-bis(diphenylphosphino)propane Chemical compound C=1C=CC=CC=1P(C=1C=CC=CC=1)CCCP(C=1C=CC=CC=1)C1=CC=CC=C1 LVEYOSJUKRVCCF-UHFFFAOYSA-N 0.000 description 2
- JSRLURSZEMLAFO-UHFFFAOYSA-N 1,3-dibromobenzene Chemical compound BrC1=CC=CC(Br)=C1 JSRLURSZEMLAFO-UHFFFAOYSA-N 0.000 description 2
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical compound C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 description 2
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 2
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 2
- 125000001622 2-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C(*)C([H])=C([H])C2=C1[H] 0.000 description 2
- XJPZKYIHCLDXST-UHFFFAOYSA-N 4,6-dichloropyrimidine Chemical compound ClC1=CC(Cl)=NC=N1 XJPZKYIHCLDXST-UHFFFAOYSA-N 0.000 description 2
- 125000004172 4-methoxyphenyl group Chemical group [H]C1=C([H])C(OC([H])([H])[H])=C([H])C([H])=C1* 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
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- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
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- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
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- 239000000654 additive Substances 0.000 description 2
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- 125000003277 amino group Chemical group 0.000 description 2
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- IPWKHHSGDUIRAH-UHFFFAOYSA-N bis(pinacolato)diboron Chemical compound O1C(C)(C)C(C)(C)OB1B1OC(C)(C)C(C)(C)O1 IPWKHHSGDUIRAH-UHFFFAOYSA-N 0.000 description 2
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- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
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- HCIIFBHDBOCSAF-UHFFFAOYSA-N octaethylporphyrin Chemical compound N1C(C=C2C(=C(CC)C(C=C3C(=C(CC)C(=C4)N3)CC)=N2)CC)=C(CC)C(CC)=C1C=C1C(CC)=C(CC)C4=N1 HCIIFBHDBOCSAF-UHFFFAOYSA-N 0.000 description 2
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- XKJCHHZQLQNZHY-UHFFFAOYSA-N phthalimide Chemical compound C1=CC=C2C(=O)NC(=O)C2=C1 XKJCHHZQLQNZHY-UHFFFAOYSA-N 0.000 description 2
- 125000005543 phthalimide group Chemical group 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
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Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Photovoltaic Devices (AREA)
- Other In-Based Heterocyclic Compounds (AREA)
- Pyrane Compounds (AREA)
- Plural Heterocyclic Compounds (AREA)
- Indole Compounds (AREA)
Abstract
Description
本発明は、光電変換素子用材料及びそれを用いた光電変換素子に関するもので、さらに詳しくは、特定の芳香族化合物を有機薄膜太陽電池材料として用いることで、特に高効率な光電変換特性が得られる有機薄膜太陽電池に関するものである。 The present invention relates to a photoelectric conversion element material and a photoelectric conversion element using the same, and more specifically, by using a specific aromatic compound as an organic thin film solar cell material, particularly high efficiency photoelectric conversion characteristics can be obtained. The present invention relates to an organic thin film solar cell.
有機薄膜太陽電池は、光信号を電気信号に変換するフォトダイオードや撮像素子、光エネルギーを電気エネルギーに変換する太陽電池に代表されるように、光入力に対して電気出力を示す装置であり、電気入力に対して光出力を示すエレクトロルミネッセンス(EL)素子とは逆の応答を示す装置である。中でも太陽電池は、化石燃料の枯渇問題や地球温暖化問題を背景に、クリーンエネルギー源として近年大変注目されており、研究開発が盛んに行なわれるようになってきた。
従来、実用化されてきたのは、単結晶Si、多結晶Si、アモルファスSi等に代表されるシリコン系太陽電池であるが、高価であることや原料Siの不足問題等が表面化するにつれて、次世代太陽電池への要求が高まりつつある。このような背景の中で、有機太陽電池は、安価で毒性が低く、原材料不足の懸念もないことから、シリコン系太陽電池に次ぐ次世代の太陽電池として大変注目を集めている。
An organic thin film solar cell is a device that shows an electrical output with respect to an optical input, as represented by a photodiode or an imaging device that converts an optical signal into an electrical signal, or a solar cell that converts optical energy into electrical energy, It is a device that exhibits a response opposite to that of an electroluminescence (EL) element that exhibits an optical output with respect to an electrical input. In particular, solar cells have attracted a great deal of attention as a clean energy source in recent years against the background of fossil fuel depletion and global warming, and research and development have been actively conducted.
Conventionally, silicon solar cells represented by single crystal Si, polycrystal Si, amorphous Si, etc. have been put into practical use. However, as the cost and raw material Si shortage problems surface, The demand for next generation solar cells is increasing. Against this background, organic solar cells are attracting much attention as next-generation solar cells next to silicon-based solar cells because they are inexpensive, have low toxicity, and do not have a fear of shortage of raw materials.
有機太陽電池は、基本的には電子を輸送するn層と正孔を輸送するp層からなっており、各層を構成する材料によって大きく2種類に分類される。
n層としてチタニア等の無機半導体表面にルテニウム色素等の増感色素を単分子吸着させ、p層として電解質溶液を用いたものは、色素増感太陽電池(所謂グレッツエルセル)と呼ばれ、変換効率の高さから、1991年以降精力的に研究されてきた。しかしながら、溶液を用いるため、長時間の使用に際して液漏れする等の欠点を有していた。
そこで、このような欠点を克服するため、最近、電解質溶液を固体化した全固体型の色素増感太陽電池も研究されている。例えば、多孔質チタニアの細孔に有機物をしみ込ませる技術が検討されているが、この技術は難易度が高いため、再現性よく高変換効率が発現できる太陽電池は完成していないのが現状である。
Organic solar cells are basically composed of an n layer for transporting electrons and a p layer for transporting holes, and is roughly classified into two types depending on the material constituting each layer.
A n-layer in which a sensitizing dye such as ruthenium dye is adsorbed on the surface of an inorganic semiconductor such as titania and an electrolyte solution is used as a p-layer is called a dye-sensitized solar cell (so-called Gretzell cell), and has a conversion efficiency. From the height, it has been studied vigorously since 1991. However, since the solution is used, it has a drawback such as liquid leakage when used for a long time.
In order to overcome such drawbacks, an all-solid-state dye-sensitized solar cell obtained by solidifying an electrolyte solution has recently been studied. For example, a technique for impregnating organic matter into the pores of porous titania has been studied, but since this technique is difficult, a solar cell that can express high conversion efficiency with high reproducibility has not yet been completed. is there.
一方、n層、p層ともに有機薄膜からなる有機薄膜太陽電池は、全固体型のため液漏れ等の欠点がなく、作製が容易であり、稀少金属であるルテニウム等を用いないこと等から最近注目を集め、精力的に研究がなされている。
有機薄膜太陽電池は、最初メロシアニン色素等を用いた単層膜で研究が進められてきたが、p層/n層の多層膜にすることで変換効率が向上することが見出され、それ以降多層膜が主流になってきている。このとき用いられた材料はp層として銅フタロシアニン(CuPc)、n層としてペリレンイミド類(PTCBI)、第3層目として含窒素系複素環化合物(バソクプロイン)であった。
On the other hand, organic thin-film solar cells consisting of organic thin films in both the n-layer and p-layer are all solid, so they have no drawbacks such as liquid leakage, are easy to manufacture, and do not use ruthenium, which is a rare metal. Attracted attention and researched energetically.
Organic thin-film solar cells have been researched with single-layer films using merocyanine dyes, etc., but it has been found that conversion efficiency can be improved by using p-layer / n-layer multilayer films. Multilayer films are becoming mainstream. The materials used at this time were copper phthalocyanine (CuPc) for the p layer, peryleneimides (PTCBI) for the n layer, and a nitrogen-containing heterocyclic compound (bathocproine) for the third layer.
その後、p層とn層の間にi層(p材料とn材料の混合層)を挿入して積層を増やすことにより、変換効率が向上することが見出された。しかし、このとき用いられた材料は、依然としてフタロシアニン類とペリレンイミド類とBCPであった。また、その後、p/i/n層を何層も積層するというスタックセル構成により、さらに変換効率が向上することが見出されたが、このときの材料系はフタロシアニン類とC60とバソクプロインであった。 Subsequently, it has been found that the conversion efficiency is improved by inserting an i layer (a mixed layer of p material and n material) between the p layer and the n layer to increase the number of layers. However, the materials used at this time were still phthalocyanines, peryleneimides and BCP. Further, thereafter, the stack cell configuration in the p / i / n layers be stacked several layers, but further the conversion efficiency was found to be improved, a material system phthalocyanines and C 60 and bathocuproine this time there were.
一方、高分子を用いた有機薄膜太陽電池では、p材料として導電性高分子を用い、n材料としてC60誘導体を用いてそれらを混合し、熱処理することによりミクロ層分離を誘起してヘテロ界面を増やし、変換効率を向上させるという、所謂バルクヘテロ構造の研究が主に行なわれてきた。ここで用いられてきた材料系はおもに、p材料としてP3HTと呼ばれる可溶性ポリチオフェン誘導体、n材料としてPCBMと呼ばれる可溶性C60誘導体であった。 On the other hand, in an organic thin film solar cell using a polymer, a conductive polymer is used as a p material, a C 60 derivative is used as an n material, and they are mixed and heat-treated to induce micro-layer separation to form a heterointerface. Research on so-called bulk heterostructures has been mainly conducted to increase the conversion efficiency and improve the conversion efficiency. Here material system that has been used is mostly soluble polythiophene derivative called P3HT as p material was soluble C 60 derivatives referred to as PCBM as an n material.
このように、有機薄膜太陽電池では、セル構成及びモルフォロジーの最適化により変換効率の向上がもたらされてきたが、用いられる材料系は初期の頃からあまり進展がなく、依然としてフタロシアニン類、ペリレンイミド類、C60類、バソクプロインが用いられてきた。従って、それらに代わる新たな材料系の開発が熱望されていた。 Thus, in organic thin film solar cells, conversion efficiency has been improved by optimizing the cell configuration and morphology, but the material system used has not made much progress since the early days, and phthalocyanines and peryleneimides still remain. , C 60 acids, bathocuproine have been used. Therefore, development of a new material system to replace them has been eagerly desired.
一般に有機太陽電池の動作過程は、(1)光吸収及び励起子生成、(2)励起子拡散、(3)電荷分離、(4)キャリア移動、(5)起電力発生の素過程からなっているが、有機物は概して電子輸送性に乏しい。また、有機層から陰極への電子取出し効率も低い。そのため、電子輸送性が高く、また、陰極への電子取出し効率の高い有機材料が要求されていた。 In general, the operation process of an organic solar cell consists of (1) light absorption and exciton generation, (2) exciton diffusion, (3) charge separation, (4) carrier movement, and (5) electromotive force generation. However, organic substances generally have poor electron transport properties. Moreover, the electron extraction efficiency from the organic layer to the cathode is low. Therefore, there has been a demand for an organic material that has high electron transport properties and high electron extraction efficiency to the cathode.
有機薄膜太陽電池や有機EL素子等に使用できる材料については、例えば、特許文献1〜3、非特許文献1〜3に記載されている。
また、特許文献4には、光電変換素子の変換効率を向上する方法が記載されている。
特許文献1のフェナントロリン系化合物は、電子輸送性が乏しく、移動度が10−6cm2/Vs程度と非常に低い。また、特許文献2のペリレンテトラカルボン酸イミド誘導体は、有機層と陰極にエネルギー障壁があるため電子取出しが不十分である。
About the material which can be used for an organic thin-film solar cell, an organic EL element, etc., it describes in the patent documents 1-3 and the nonpatent literature 1-3, for example.
Patent Document 4 describes a method for improving the conversion efficiency of a photoelectric conversion element.
The phenanthroline compound of Patent Document 1 has poor electron transport properties, and has a very low mobility of about 10 −6 cm 2 / Vs. In addition, the perylene tetracarboxylic imide derivative of Patent Document 2 has insufficient energy extraction between the organic layer and the cathode, so that the electron extraction is insufficient.
本発明の目的は、光電変換素子、特に、有機薄膜太陽電池として用いたときに高効率の光電変換特性を示す新規な光電変換素子用材料を提供することである。 The objective of this invention is providing the novel material for photoelectric conversion elements which shows a highly efficient photoelectric conversion characteristic, when it uses as a photoelectric conversion element, especially an organic thin-film solar cell.
本発明によれば、以下の化合物等が提供される。
1.下記式(1)で表される化合物。
Rgはそれぞれ、置換もしくは無置換の、ベンゼン環又はナフタレン環であり、
Xはそれぞれ、酸素原子、又はN−R1であり、
R1はそれぞれ、水素原子、ハロゲン原子、シアノ基、C1〜C20の置換もしくは無置換のアルキル基、C2〜C20の置換もしくは無置換のアルケニル基、C2〜C20の置換もしくは無置換のアルキニル基、C6〜C20の置換もしくは無置換のアリール基、C3〜C20の置換もしくは無置換のヘテロアリール基、C1〜C20の置換もしくは無置換のアルキルオキシ基、C6〜C20の置換もしくは無置換のアリールオキシ基、C6〜C20の置換もしくは無置換のアリールアミノ基、C1〜C20の置換もしくは無置換のアルキルアミノ基であり、
nは2又は3である。)
2.下記式(1A)で表される化合物である1に記載の化合物。
3.前記式(1)で表される化合物が、下記式(1B)又は(1C)で表わされる化合物である2に記載の化合物。
aは0〜4の整数、bは0〜3の整数、cは0〜2の整数、dは0〜2の整数、eは0又は1、fは0〜2の整数、gは0〜2、hは0〜2の整数、iは0〜2の整数、jは0又は1である。
a〜iが2以上の場合、2以上のR11〜R20はそれぞれ同一でも異なっていてもよい。)]
4.上記1に記載の化合物を含有する電子輸送材料。
5.一対の電極の間に1〜3のいずれかに記載の化合物を含む有機薄膜太陽電池。
6.前記化合物を陰極側のバッファー層として有する5に記載の有機薄膜太陽電池。
7.上記5又は6に記載の有機薄膜太陽電池を具備する装置。
According to the present invention, the following compounds and the like are provided.
1. A compound represented by the following formula (1).
Each Rg is a substituted or unsubstituted benzene ring or naphthalene ring;
Each X is an oxygen atom or N—R 1 ;
R 1 is a hydrogen atom, a halogen atom, a cyano group, a C 1 to C 20 substituted or unsubstituted alkyl group, a C 2 to C 20 substituted or unsubstituted alkenyl group, a C 2 to C 20 substituted or unsubstituted alkynyl groups, C substituted or unsubstituted aryl group having 6 ~C 20, C 3 substituted or unsubstituted heteroaryl group -C 20, a substituted or unsubstituted alkyl group having C 1 -C 20, substituted or unsubstituted aryloxy group C 6 -C 20, a substituted or unsubstituted arylamino group C 6 -C 20, a substituted or unsubstituted alkylamino group C 1 -C 20,
n is 2 or 3. )
2. 2. The compound according to 1, which is a compound represented by the following formula (1A).
3. 3. The compound according to 2, wherein the compound represented by the formula (1) is a compound represented by the following formula (1B) or (1C).
a is an integer of 0 to 4, b is an integer of 0 to 3, c is an integer of 0 to 2, d is an integer of 0 to 2, e is 0 or 1, f is an integer of 0 to 2, and g is 0 to 0 2, h is an integer from 0 to 2, i is an integer from 0 to 2, and j is 0 or 1.
When a to i are 2 or more, two or more R 11 to R 20 may be the same or different. )]
4). 2. An electron transport material containing the compound according to 1 above.
5). The organic thin-film solar cell containing the compound in any one of 1-3 between a pair of electrodes.
6). 6. The organic thin-film solar cell according to 5, having the compound as a buffer layer on the cathode side.
7). The apparatus which comprises the organic thin film solar cell of said 5 or 6.
本発明によれば、光電変換素子、特に有機薄膜太陽電池として用いたときに高効率の光電変換特性を示す新規な光電変換素子用材料が提供できる。 ADVANTAGE OF THE INVENTION According to this invention, when used as a photoelectric conversion element, especially an organic thin film solar cell, the novel material for photoelectric conversion elements which shows a highly efficient photoelectric conversion characteristic can be provided.
本発明の化合物は、下記式(1)で表される化合物である。
式中、Lは2価又は3価の基であり、
Rgはそれぞれ、置換もしくは無置換の、ベンゼン環又はナフタレン環であり、
Xはそれぞれ、酸素原子、又はN−R1であり、
R1はそれぞれ、水素原子、ハロゲン原子、シアノ基、C1〜C20の置換もしくは無置換のアルキル基、C2〜C20の置換もしくは無置換のアルケニル基、C2〜C20の置換もしくは無置換のアルキニル基、C6〜C20の置換もしくは無置換のアリール基、C3〜C20の置換もしくは無置換のヘテロアリール基、C1〜C20の置換もしくは無置換のアルキルオキシ基、C6〜C20の置換もしくは無置換のアリールオキシ基、C6〜C20の置換もしくは無置換のアリールアミノ基、C1〜C20の置換もしくは無置換のアルキルアミノ基であり、
nは2又は3である。
In the formula, L is a divalent or trivalent group,
Each Rg is a substituted or unsubstituted benzene ring or naphthalene ring;
Each X is an oxygen atom or N—R 1 ;
R 1 is a hydrogen atom, a halogen atom, a cyano group, a C 1 to C 20 substituted or unsubstituted alkyl group, a C 2 to C 20 substituted or unsubstituted alkenyl group, a C 2 to C 20 substituted or unsubstituted alkynyl groups, C substituted or unsubstituted aryl group having 6 ~C 20, C 3 substituted or unsubstituted heteroaryl group -C 20, a substituted or unsubstituted alkyl group having C 1 -C 20, substituted or unsubstituted aryloxy group C 6 -C 20, a substituted or unsubstituted arylamino group C 6 -C 20, a substituted or unsubstituted alkylamino group C 1 -C 20,
n is 2 or 3.
式(1)の化合物は、分子内にフタルイミド骨格、無水ナフタル酸骨格及びナフタルイミド骨格から選択される骨格構造を2つ又は3つ含むことを特徴とする。本発明の化合物は、フタルイミド骨格、無水ナフタル酸骨格又はナフタルイミド骨格を2つ以上有するため、高い電子輸送性をもち、電極とのエネルギー障壁が小さい。また、ナフタルイミド、無水ナフタル酸、フタルイミドは電極と相互作用しアンカー基として働くため、電極からの電荷注入や電極への電荷取出しの効果が高い(Physical Review B.54,13748,(1996))。従って、有機薄膜太陽電池に用いると、高効率の光電変換特性を示す有機薄膜太陽電池が得られる。 The compound of formula (1) is characterized in that it contains two or three skeletal structures selected from a phthalimide skeleton, a naphthalic anhydride skeleton and a naphthalimide skeleton in the molecule. Since the compound of the present invention has two or more phthalimide skeletons, naphthalic anhydride skeletons or naphthalimide skeletons, it has high electron transport properties and a small energy barrier with respect to the electrode. In addition, naphthalimide, naphthalic anhydride, and phthalimide interact with the electrode and work as an anchor group, so that the effect of charge injection from the electrode and extraction of the charge from the electrode is high (Physical Review B. 54, 13748, (1996)). . Therefore, when used for an organic thin film solar cell, an organic thin film solar cell exhibiting highly efficient photoelectric conversion characteristics can be obtained.
式(1)において、Lは2価又は3価の基である。具体的には、フェニル基、ピリジン基、ピリミジン基、ピラジン基、トリアジン基、ベンゾキノン基、テトラシアノキノジメタン基、チオフェン基、フラン基、イソオキサゾール基、オキサジアゾール基、チアゾール基等の各基から、水素原子を1つ又は2つとった基が挙げられる。 In the formula (1), L is a divalent or trivalent group. Specifically, phenyl group, pyridine group, pyrimidine group, pyrazine group, triazine group, benzoquinone group, tetracyanoquinodimethane group, thiophene group, furan group, isoxazole group, oxadiazole group, thiazole group, etc. Examples of the group include a group having one or two hydrogen atoms.
本発明の化合物としては、下記式(1A)で表される化合物が好ましい。
即ち、式(1)のLが2価の基であることが好ましく、さらに、上述した芳香族環であることが好ましい。ナフタルイミド、無水ナフタル酸、フタルイミドを芳香族環であるLで繋ぐことで電荷輸送性が向上する。
特に、式(1A)で表される化合物は、下記式(1B)又は(1C)で表わされる化合物であることが好ましい。
That is, L in the formula (1) is preferably a divalent group, and more preferably the above-described aromatic ring. Charge transportability is improved by connecting naphthalimide, naphthalic anhydride, and phthalimide with L which is an aromatic ring.
In particular, the compound represented by the formula (1A) is preferably a compound represented by the following formula (1B) or (1C).
式(1B)、(1C)において、Lは、下記式(L1)〜(L12)で表されるいずれかの基である。
式中、R11〜R20はそれぞれ、ハロゲン原子、シアノ基、C1〜C20の置換もしくは無置換のアルキル基、C2〜C20の置換もしくは無置換のアルケニル基、C2〜C20の置換もしくは無置換のアルキニル基、C6〜C20の置換もしくは無置換のアリール基、C6〜C20の置換もしくは無置換のヘテロアリール基、C1〜C20の置換もしくは無置換のアルキルオキシ基、C6〜C20の置換もしくは無置換のアリールオキシ基、C6〜C20の置換もしくは無置換のアリールアミノ基、C1〜C20の置換もしくは無置換のアルキルアミノ基である。
尚、Cx〜Cyは炭素数がx〜yであることを意味する。
In the formula, R 11 to R 20 are each a halogen atom, a cyano group, a C 1 to C 20 substituted or unsubstituted alkyl group, a C 2 to C 20 substituted or unsubstituted alkenyl group, and C 2 to C 20. Substituted or unsubstituted alkynyl group, C 6 -C 20 substituted or unsubstituted aryl group, C 6 -C 20 substituted or unsubstituted heteroaryl group, C 1 -C 20 substituted or unsubstituted alkyl oxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted arylamino group C 6 -C 20, a substituted or unsubstituted alkylamino group C 1 -C 20 of C 6 -C 20.
Cx to Cy means that the carbon number is x to y.
C1〜C20の置換もしくは無置換のアルキル基は、直鎖、分岐鎖又は環状のいずれであってもよい。具体例としては、メチル、エチル、1−プロピル、2−プロピル、1−ブチル、2−ブチル、sec−ブチル、tert−ブチル、ペンチル、ヘキシル、オクチル、デシル、ドデシル、2−エチルヘキシル、3,7−ジメチルオクチル、シクロプロピル、シクロペンチル、シクロヘキシル、1−アダマンチル、2−アダマンチル、ノルボルニル、トリフルオロメチル、トリクロロメチル、ベンジル、α,α−ジメチルベンジル、2−フェニルエチル、1−フェニルエチル等が挙げられる。これらのうち、原料の入手しやすさ等の観点から、メチル、エチル、プロピル、イソプロピル、tert−ブチル、シクロヘキシル等が好ましい。 A substituted or unsubstituted alkyl group of C 1 -C 20 may be any of linear, branched or cyclic. Specific examples include methyl, ethyl, 1-propyl, 2-propyl, 1-butyl, 2-butyl, sec-butyl, tert-butyl, pentyl, hexyl, octyl, decyl, dodecyl, 2-ethylhexyl, 3, 7 -Dimethyloctyl, cyclopropyl, cyclopentyl, cyclohexyl, 1-adamantyl, 2-adamantyl, norbornyl, trifluoromethyl, trichloromethyl, benzyl, α, α-dimethylbenzyl, 2-phenylethyl, 1-phenylethyl, etc. . Of these, methyl, ethyl, propyl, isopropyl, tert-butyl, cyclohexyl and the like are preferable from the viewpoint of availability of raw materials.
C2〜C20の置換もしくは無置換のアルケニル基は、直鎖、分岐鎖又は環状のいずれであってもよく、それらの具体例としては、ビニル、プロペニル、ブテニル、オレイル、エイコサペンタエニル、ドコサヘキサエニル、スチリル、2,2−ジフェニルビニル、1,2,2−トリフェニルビニル、2−フェニル−2−プロペニル等が挙げられる。これらのうち、原料の入手しやすさ等の観点から、ビニル、スチリル、2,2−ジフェニルビニル等が好ましい。 A substituted or unsubstituted alkenyl group having C 2 -C 20 straight chain, may be either branched or cyclic, as their specific examples include vinyl, propenyl, butenyl, oleyl, eicosapentaenoic enyl, Docosahexaenyl, styryl, 2,2-diphenylvinyl, 1,2,2-triphenylvinyl, 2-phenyl-2-propenyl and the like can be mentioned. Of these, vinyl, styryl, 2,2-diphenylvinyl and the like are preferable from the viewpoint of availability of raw materials.
C2〜C20の置換もしくは無置換のアルキニル基は、直鎖、分岐鎖又は環状のいずれであってもよく、それらの具体例としては、エテニル、プロピニル、2−フェニルエテニル等が挙げられる。これらのうち、原料の入手しやすさ等の観点から、エテニル、2−フェニルエテニル等が好ましい。 The C 2 to C 20 substituted or unsubstituted alkynyl group may be linear, branched or cyclic, and specific examples thereof include ethenyl, propynyl, 2-phenylethenyl and the like. . Of these, ethenyl, 2-phenylethenyl, and the like are preferable from the viewpoint of availability of raw materials.
C6〜C20の置換もしくは無置換のアリール基の具体例としては、フェニル、2−トリル、4−トリル、4−トリフルオロメチルフェニル、4−メトキシフェニル、4−シアノフェニル、2−ビフェニリル、3−ビフェニリル、4−ビフェニリル、ターフェニリル、3,5−ジフェニルフェニル、3,4−ジフェニルフェニル、ペンタフェニルフェニル、4−(2,2−ジフェニルビニル)フェニル、4−(1,2,2−トリフェニルビニル)フェニル、フルオレニル、1−ナフチル、2−ナフチル、9−アントリル、2−アントリル、9−フェナントリル、1−ピレニル、クリセニル、ナフタセニル、コロニル等が挙げられる。これらのうち、原料の入手しやすさ等の観点から、フェニル、4−ビフェニリル、1−ナフチル、2−ナフチル、9−フェナントリル等が好ましい。 Specific examples of the C 6 to C 20 substituted or unsubstituted aryl group include phenyl, 2-tolyl, 4-tolyl, 4-trifluoromethylphenyl, 4-methoxyphenyl, 4-cyanophenyl, 2-biphenylyl, 3-biphenylyl, 4-biphenylyl, terphenylyl, 3,5-diphenylphenyl, 3,4-diphenylphenyl, pentaphenylphenyl, 4- (2,2-diphenylvinyl) phenyl, 4- (1,2,2-tri Phenylvinyl) phenyl, fluorenyl, 1-naphthyl, 2-naphthyl, 9-anthryl, 2-anthryl, 9-phenanthryl, 1-pyrenyl, chrycenyl, naphthacenyl, coronyl and the like. Of these, phenyl, 4-biphenylyl, 1-naphthyl, 2-naphthyl, 9-phenanthryl and the like are preferable from the viewpoint of availability of raw materials.
C3〜C20の置換もしくは無置換のヘテロアリール基について、含窒素アゾール系へテロ環の場合の結合位置は、炭素だけでなく窒素で結合することができる。それらの具体例としては、フラン、チオフェン、ピロール、イミダゾール、ベンズイミダゾール、ピラゾール、ベンズピラゾール、トリアゾール、オキサジアゾール、ピリジン、ピラジン、トリアジン、キノリン、ベンゾフラン、ジベンゾフラン、ベンゾチオフェン、ジベンゾチオフェン、カルバゾール等が挙げられる。これらのうち、原料の入手しやすさ等の観点から、フラン、チオフェン、ピリジン、カルバゾール等が好ましい。 For substituted or unsubstituted heteroaryl group C 3 -C 20, coupling position when the nitrogen-containing heterocyclic ring azole may be coupled with nitrogen, not only a carbon. Specific examples thereof include furan, thiophene, pyrrole, imidazole, benzimidazole, pyrazole, benzpyrazole, triazole, oxadiazole, pyridine, pyrazine, triazine, quinoline, benzofuran, dibenzofuran, benzothiophene, dibenzothiophene, carbazole and the like. Can be mentioned. Of these, furan, thiophene, pyridine, carbazole and the like are preferable from the viewpoint of availability of raw materials.
C1〜C20の置換もしくは無置換のアルキルオキシ基は、直鎖、分岐鎖又は環状のいずれであってもよく、それらの具体例としては、メトキシ、エトキシ、1−プロピルオキシ、2−プロピルオキシ、1−ブチルオキシ、2−ブチルオキシ、sec−ブチルオキシ、tert−ブチルオキシ、ペンチルオキシ、ヘキシルオキシ、オクチルオキシ、デシルオキシ、ドデシルオキシ、2−エチルヘキシルオキシ、3,7−ジメチルオクチルオキシ、シクロプロピルオキシ、シクロペンチルオキシ、シクロヘキシルオキシ、1−アダマンチルオキシ、2−アダマンチルオキシ、ノルボルニルオキシ、トリフルオロメトキシ、ベンジロキシ、α,α−ジメチルベンジロキシ、2−フェニルエトキシ、1−フェニルエトキシ等が挙げられる。これらのうち、原料の入手しやすさ等の観点から、メトキシ、エトキシ、ter−ブチルオキシ等が好ましい。 A substituted or unsubstituted alkyl group of C 1 -C 20 straight chain, may be either branched or cyclic, as their specific examples, methoxy, ethoxy, 1-propyloxy, 2-propyl Oxy, 1-butyloxy, 2-butyloxy, sec-butyloxy, tert-butyloxy, pentyloxy, hexyloxy, octyloxy, decyloxy, dodecyloxy, 2-ethylhexyloxy, 3,7-dimethyloctyloxy, cyclopropyloxy, cyclopentyl Examples thereof include oxy, cyclohexyloxy, 1-adamantyloxy, 2-adamantyloxy, norbornyloxy, trifluoromethoxy, benzyloxy, α, α-dimethylbenzyloxy, 2-phenylethoxy, 1-phenylethoxy and the like. Of these, methoxy, ethoxy, ter-butyloxy and the like are preferable from the viewpoint of availability of raw materials.
C6〜C20の置換もしくは無置換のアリールオキシ基は、直鎖、分岐鎖又は環状のいずれであってもよく、それらの具体例としては、前記アリール基が酸素を介して結合した置換基が挙げられる。これらのうち、原料の入手しやすさ等の観点から、フェノキシ、ナフトキシ、フェナントリルオキシ等が好ましい。 Substituted or unsubstituted aryloxy group C 6 -C 20 straight chain, may be either branched or cyclic, as their specific examples, the substituent which the aryl group is bonded through an oxygen Is mentioned. Of these, phenoxy, naphthoxy, phenanthryloxy and the like are preferable from the viewpoint of availability of raw materials.
C6〜C20の置換もしくは無置換のアリールアミノ基は、アミノ基に結合する置換基のうち少なくともひとつがアリール基であればよく、具体的には、フェニルアミノ、メチルフェニルアミノ、ジフェニルアミノ、ジp−トリルアミノ、ジm−トリルアミノ、フェニルm−トリルアミノ、フェニル−1−ナフチルアミノ、フェニル−2−ナフチルアミノ、フェニル(sec−ブチルフェニル)アミノ、フェニルt−ブチルアミノ、ビス(4−メトキシフェニル)アミノ、フェニル−4−カルバゾリルフェニルアミノ等を挙げることができる。これらのうち、原料の入手しやすさ等の観点から、ジフェニルアミノ、ジトリルアミノ、ビス(4−メトキシフェニル)アミノ等が好ましい。 The C 6 to C 20 substituted or unsubstituted arylamino group may be any group in which at least one of the substituents bonded to the amino group is an aryl group. Specifically, phenylamino, methylphenylamino, diphenylamino, Di-p-tolylamino, di-m-tolylamino, phenyl-m-tolylamino, phenyl-1-naphthylamino, phenyl-2-naphthylamino, phenyl (sec-butylphenyl) amino, phenyl t-butylamino, bis (4-methoxyphenyl) ) Amino, phenyl-4-carbazolylphenylamino and the like. Of these, diphenylamino, ditolylamino, bis (4-methoxyphenyl) amino and the like are preferable from the viewpoint of availability of raw materials.
C1〜C20の置換もしくは無置換のアルキルアミノ基は、アミノ基に結合するアルキル基は同じでも異なっていてもよく、互いに結合して環を形成していてもよい。具体的には、メチルアミノ、ジメチルアミノ、メチルエチルアミノ、ジエチルアミノ、ビス(2−ヒドロキシエチル)アミノ、ビス(2−メトキシエチル)アミノ、ピペリジノ、モルホリノ等を挙げることができる。これらのうち、原料の入手しやすさ等の観点から、ジメチルアミノ、ジエチルアミノ、ピペリジノ等が好ましい。 In the substituted or unsubstituted alkylamino group of C 1 to C 20 , the alkyl groups bonded to the amino group may be the same or different, and may be bonded to each other to form a ring. Specific examples include methylamino, dimethylamino, methylethylamino, diethylamino, bis (2-hydroxyethyl) amino, bis (2-methoxyethyl) amino, piperidino, morpholino and the like. Of these, dimethylamino, diethylamino, piperidino and the like are preferable from the viewpoint of availability of raw materials.
aは0〜4の整数、bは0〜3の整数、cは0〜2の整数、dは0〜2の整数、eは0又は1、fは0〜2の整数、gは0〜2、hは0〜2の整数、iは0〜2の整数、jは0又は1である。
a〜iが2以上の場合、2以上のR11〜R20はそれぞれ同一でも異なっていてもよい。例えば、aが2以上である場合、各R11は同一でも異なっていてもよい。
a is an integer of 0 to 4, b is an integer of 0 to 3, c is an integer of 0 to 2, d is an integer of 0 to 2, e is 0 or 1, f is an integer of 0 to 2, and g is 0 to 0 2, h is an integer from 0 to 2, i is an integer from 0 to 2, and j is 0 or 1.
When a to i are 2 or more, two or more R 11 to R 20 may be the same or different. For example, when a is 2 or more, each R 11 may be the same or different.
式(1)及び(1A)のRgは、それぞれ、置換もしくは無置換の、ベンゼン環又はナフタレン環である。Rgの置換基の例としては、上述したR11〜R20と同様な基が挙げられる。具体的には、ハロゲン原子、シアノ基、C1〜C20の置換もしくは無置換のアルキル基、C2〜C20の置換もしくは無置換のアルケニル基、C2〜C20の置換もしくは無置換のアルキニル基、C6〜C20の置換もしくは無置換のアリール基、C3〜C20の置換もしくは無置換のヘテロアリール基、C1〜C20の置換もしくは無置換のアルキルオキシ基、C6〜C20の置換もしくは無置換のアリールオキシ基、C6〜C20の置換もしくは無置換のアリールアミノ基、C1〜C20の置換もしくは無置換のアルキルアミノ基である。 Rg in the formulas (1) and (1A) is a substituted or unsubstituted benzene ring or naphthalene ring, respectively. Examples of the substituent for Rg include the same groups as R 11 to R 20 described above. Specifically, a halogen atom, a cyano group, a substituted or unsubstituted alkyl group of C 1 -C 20, a substituted or unsubstituted alkenyl group having C 2 -C 20, a substituted or unsubstituted C 2 -C 20 alkynyl groups, C substituted or unsubstituted aryl group having 6 ~C 20, C 3 substituted or unsubstituted heteroaryl group -C 20, a substituted or unsubstituted alkyl group having C 1 ~C 20, C 6 ~ A C 20 substituted or unsubstituted aryloxy group, a C 6 to C 20 substituted or unsubstituted arylamino group, and a C 1 to C 20 substituted or unsubstituted alkylamino group.
式(1)及び(1A)〜(1C)のXは、それぞれ、酸素原子、又はN−R1である。
R1はそれぞれ、水素原子、ハロゲン原子、シアノ基、C1〜C20の置換もしくは無置換のアルキル基、C2〜C20の置換もしくは無置換のアルケニル基、C2〜C20の置換もしくは無置換のアルキニル基、C6〜C20の置換もしくは無置換のアリール基、C3〜C20の置換もしくは無置換のヘテロアリール基、C1〜C20の置換もしくは無置換のアルキルオキシ基、C6〜C20の置換もしくは無置換のアリールオキシ基、C6〜C20の置換もしくは無置換のアリールアミノ基、C1〜C20の置換もしくは無置換のアルキルアミノ基である。
これら各基の例としては、上述したR11〜R20と同様な基が挙げられる。
X in the formulas (1) and (1A) to (1C) is an oxygen atom or N—R 1 , respectively.
R 1 is a hydrogen atom, a halogen atom, a cyano group, a C 1 to C 20 substituted or unsubstituted alkyl group, a C 2 to C 20 substituted or unsubstituted alkenyl group, a C 2 to C 20 substituted or unsubstituted alkynyl groups, C substituted or unsubstituted aryl group having 6 ~C 20, C 3 substituted or unsubstituted heteroaryl group -C 20, a substituted or unsubstituted alkyl group having C 1 -C 20, substituted or unsubstituted aryloxy group C 6 -C 20, a substituted or unsubstituted arylamino group C 6 -C 20, a substituted or unsubstituted alkylamino group C 1 -C 20.
Examples of these groups include the same groups as R 11 to R 20 described above.
本発明の化合物としては、例えば、以下の化合物を挙げることができる。
これらの中で、以下に示すジフタルイミド化合物が好ましい
本発明の化合物を合成する方法としては種々あるが、中でもパラジウムに代表される金属触媒を用いるクロスカップリング反応を挙げることができる。この合成経路は、原料が入手し易いこと、反応条件が温和なこと、高収率で目的物を与えること等から好ましい。合成経路の一例を示す。 There are various methods for synthesizing the compound of the present invention. Among them, a cross-coupling reaction using a metal catalyst typified by palladium can be mentioned. This synthetic route is preferable because the raw materials are easily available, the reaction conditions are mild, and the target product is provided in a high yield. An example of a synthesis route is shown.
反応式において、Yは、塩素、臭素、ヨウ素等のハロゲン元素又はトリフルオロメタンスルホニルオキシ基、ノナフルオロブタンスルホニルオキシ基、メタンスルホニルオキシ基、p−トルエンスルホニルオキシ基等の擬ハロゲン置換基を表し、MはB(OH)2、ピナコラートボリル基、カテコールボリル基等のボロン酸及びそのエステル試薬、Sn(Bu)4等の有機スズ試薬、Si(OH)3等の有機ケイ素試薬に代表される典型金属グループを表す。典型金属グループは無水ナフタル酸に結合していても良いし(反応式1)、Qに結合していても良い(反応式2)。これら擬ハロゲン結合ユニットと典型金属試薬を反応させる条件としては、熊田・玉尾カップリング(Grignard試薬)、根岸カップロング(有機亜鉛試薬)、鈴木・宮浦カップリング(ボロン試薬)、小杉・右田・Stilleカップリング(有機スズ試薬)、檜山カップリング(有機珪素試薬)等の人名反応を用いることができる。 In the reaction formula, Y represents a halogen element such as chlorine, bromine and iodine or a pseudohalogen substituent such as a trifluoromethanesulfonyloxy group, a nonafluorobutanesulfonyloxy group, a methanesulfonyloxy group, and a p-toluenesulfonyloxy group, M is represented by boronic acid such as B (OH) 2 , pinacolatoboryl group, catecholboryl group and its ester reagent, organotin reagent such as Sn (Bu) 4 , and organosilicon reagent such as Si (OH) 3. Represents a typical metal group. The typical metal group may be bonded to naphthalic anhydride (Scheme 1) or Q (Scheme 2). The conditions for reacting these pseudohalogen bonding units with typical metal reagents include Kumada-Tamao coupling (Grignard reagent), Negishi cup long (organic zinc reagent), Suzuki-Miyaura coupling (boron reagent), Kosugi-Udita, Personal name reactions such as Stille coupling (organotin reagent) and Ulsan coupling (organosilicon reagent) can be used.
この反応で使用することのできる金属触媒としては、塩化パラジウム、酢酸パラジウム、ジクロロビス(トリフェニルホスフィン)パラジウム等の2価パラジウム、テトラキス(トリフェニルホスフィン)パラジジウム、トリス(ジベンジリデンアセトン)ジパラジウム等の0価パラジウム、塩化ニッケル、ジクロロビス(トリフェニルホスフィン)ニッケル、ジクロロ(1,3−ビスジフェニルホスフィノプロパン)ニッケル等の2価ニッケル、テトラキス(トリフェニルホスフィン)ニッケル、テトラカルボニルニッケル、ビス(シクロオクタジエン)ニッケル等の0価ニッケルを用いることができる。また、これらの金属触媒に配位子を添加することもできる。その際に用いることのできる配位子としては、2,2’−ビピリジン、1,10−フェナントロリン等のピリジン類、トリフェニルホスフィン、トリ(o−トリル)ホスフィン、トリ(2−フリル)ホスフィン、トリシクロヘキシルホスフィン、トリ(t−ブチル)ホスフィン、2−ジt−ブチルホスフィノビフェニル(JohnPhos)、2−ジt−ブチルホスフィノ‐2’−ジメチルアミノビフェニル(DavePhos)、2−ジシクロヘキシルホスフィノ‐2’,4’,6’−トリイソプロピル−1,1’−ビフェニル(XPhos)、2−ジシクロヘキシルホスフィノ‐2’,6’−ジメトキシビフェニル(SPhos)等の単座ホスフィン類、1,2−ビス(ジフェニルホスフィノ)エタン(DPPE)、1,3−ビス(ジフェニルホスフィノ)プロパン(DPPP)、2,2‘−ビス(ジフェニルホスフィノ)−1,1’−ビナフチル(BINAP)、1,1’−ビス(ジフェニルホスフィノ)フェロセン(DPPF)、4,5−ビス(ジフェニルホスフィノ)−9,9−ジメチルキサンテン(XantPhos)等の2座ホスフィン類等がある。これらのうちで、高収率を与えることや反応条件が温和になるという理由からホスフィン類が好ましい。 Examples of metal catalysts that can be used in this reaction include palladium chloride, palladium acetate, divalent palladium such as dichlorobis (triphenylphosphine) palladium, tetrakis (triphenylphosphine) paradidium, tris (dibenzylideneacetone) dipalladium, and the like. Divalent nickel such as zerovalent palladium, nickel chloride, dichlorobis (triphenylphosphine) nickel, dichloro (1,3-bisdiphenylphosphinopropane) nickel, tetrakis (triphenylphosphine) nickel, tetracarbonylnickel, bis (cycloocta Zero-valent nickel such as diene) nickel can be used. Moreover, a ligand can also be added to these metal catalysts. Examples of ligands that can be used in this case include pyridines such as 2,2′-bipyridine and 1,10-phenanthroline, triphenylphosphine, tri (o-tolyl) phosphine, tri (2-furyl) phosphine, Tricyclohexylphosphine, tri (t-butyl) phosphine, 2-di-t-butylphosphinobiphenyl (JohnPhos), 2-di-t-butylphosphino-2'-dimethylaminobiphenyl (DavePhos), 2-dicyclohexylphosphino- Monodentate phosphines such as 2 ′, 4 ′, 6′-triisopropyl-1,1′-biphenyl (XPhos), 2-dicyclohexylphosphino-2 ′, 6′-dimethoxybiphenyl (SPhos), 1,2-bis (Diphenylphosphino) ethane (DPPE), 1,3-bis (diph Nylphosphino) propane (DPPP), 2,2′-bis (diphenylphosphino) -1,1′-binaphthyl (BINAP), 1,1′-bis (diphenylphosphino) ferrocene (DPPF), 4,5-bis And bidentate phosphines such as (diphenylphosphino) -9,9-dimethylxanthene (XantPhos). Of these, phosphines are preferred because they give a high yield and the reaction conditions become mild.
本発明の化合物は、光電変換素子用材料、特に、電子輸送材料として好適である。具体的に、本発明の化合物は、電子移動度が1.0×10−6(cm2/Vs)〜2.0(cm2/Vs)と大きい。
ここで、電子移動度はTOF(Time Of Flight)法(オプテル株式会社(現住友重機械メカトロニクス株式会社、型番:TOF−401))により算出する。
具体的には、ITO/本発明の化合物層/Alの構成としたものについて、室温(23度)において、光照射により生じる過渡電流の時間特性(過渡特性時間)を測定し、以下の式により電子移動度を算出する。
電子移動度(cm2/Vs)=(本発明層(cm))2/(過渡特性時間(s)・印加電圧(V))
尚、本発明の電子輸送材料は、本発明の化合物単独から形成されていてもよいし、本発明の化合物と他の成分の混合物から形成されていてもよい。
The compound of the present invention is suitable as a material for a photoelectric conversion element, particularly as an electron transport material. Specifically, the compounds of the present invention, as large as 1.0 × 10 -6 (cm 2 /Vs)~2.0(cm 2 / Vs) electron mobility.
Here, the electron mobility is calculated by the TOF (Time Of Flight) method (Optel Corporation (currently Sumitomo Heavy Industries Mechatronics Corporation, model number: TOF-401)).
Specifically, the time characteristic (transient characteristic time) of the transient current generated by light irradiation was measured at room temperature (23 degrees) for the ITO / compound layer / Al structure of the present invention, and the following equation was used. Calculate the electron mobility.
Electron mobility (cm 2 / Vs) = (Invention layer (cm)) 2 / (Transient characteristic time (s) · Applied voltage (V))
The electron transport material of the present invention may be formed from the compound of the present invention alone or may be formed from a mixture of the compound of the present invention and other components.
本発明の電子輸送材料を用いた有機薄膜太陽電池は、高効率の変換特性を示す。 The organic thin-film solar cell using the electron transport material of the present invention exhibits highly efficient conversion characteristics.
本発明の有機薄膜太陽電池のセル構造は、一対の電極の間に上記化合物を含有する構造であれば特に限定されるものでない。具体的には、安定な絶縁性基板上に下記の構成を有する構造が挙げられる。
(1)下部電極/本発明の有機化合物層/上部電極
(2)下部電極/p層/n層/上部電極
(3)下部電極/バッファー層/p層/n層/上部電極
(4)下部電極/p層/n層/バッファー層/上部電極
(5)下部電極/バッファー層/p層/n層/バッファー層/上部電極
(6)下部電極/バッファー層/p層/i層(又はp材料とn材料の混合層)/n層/バッファー層/上部電極
The cell structure of the organic thin-film solar battery of the present invention is not particularly limited as long as it is a structure containing the above compound between a pair of electrodes. Specifically, a structure having the following configuration on a stable insulating substrate can be given.
(1) Lower electrode / organic compound layer of the present invention / upper electrode (2) Lower electrode / p layer / n layer / upper electrode (3) Lower electrode / buffer layer / p layer / n layer / upper electrode (4) Lower part Electrode / p layer / n layer / buffer layer / upper electrode (5) lower electrode / buffer layer / p layer / n layer / buffer layer / upper electrode (6) lower electrode / buffer layer / p layer / i layer (or p) Mixed layer of material and n material) / n layer / buffer layer / upper electrode
本発明の有機薄膜太陽電池では、電池を構成するいずれかの部材に本発明の材料を含有していればよい。また、本発明の材料を含有する部材は、他の成分を併せて含んでいてもよい。本発明の材料を含まない部材や混合材料については、有機薄膜太陽電池で使用される公知の部材や材料を使用することができる。尚、好ましくは、素子構成(3)〜(6)の陰極側のバッファー層、さらに好ましくは素子構成(5)(6)の陰極側のバッファー層に本発明の化合物を用いることが好ましい。以下、各構成部材について簡単に説明する。 In the organic thin-film solar cell of the present invention, any material constituting the battery may contain the material of the present invention. Moreover, the member containing the material of this invention may contain the other component collectively. About the member and mixed material which do not contain the material of this invention, the well-known member and material used with an organic thin film solar cell can be used. Preferably, the compound of the present invention is used in the buffer layer on the cathode side of the device structures (3) to (6), more preferably in the buffer layer on the cathode side of the device structures (5) and (6). Hereinafter, each component will be briefly described.
1.下部電極、上部電極
下部電極、上部電極の材料は特に制限はなく、公知の導電性材料を使用できる。例えば、p層と接続する電極としては、錫ドープ酸化インジウム(ITO)や金(Au)、オスミウム(Os),パラジウム(Pd)等の金属が使用でき、n層と接続する電極としては、銀(Ag)、アルミニウム(Al)、インジウム(In),カルシウム(Ca),白金(Pt)リチウム(Li)等の金属やMg:Ag、Mg:InやAl:Li等の二成分金属系,さらには上記P層と接続する電極例示材料が使用できる。
尚、高効率の光電変換特性を得るためには、例えば有機薄膜太陽電池が太陽電池の場合、太陽電池の少なくとも一方の面は太陽光スペクトルにおいて充分透明にすることが望ましい。透明電極は、公知の導電性材料を使用して、蒸着やスパッタリング等の方法で所定の透光性が確保するように形成する。受光面の電極の光透過率は10%以上とすることが望ましい。一対の電極構成の好ましい構成では、電極部の一方が仕事関数の大きな金属を含み、他方は仕事関数の小さな金属を含む。
1. Lower electrode, upper electrode The material of the lower electrode and the upper electrode is not particularly limited, and a known conductive material can be used. For example, a metal such as tin-doped indium oxide (ITO), gold (Au), osmium (Os), palladium (Pd) can be used as the electrode connected to the p layer, and silver as the electrode connected to the n layer. Metals such as (Ag), aluminum (Al), indium (In), calcium (Ca), platinum (Pt) lithium (Li) and the like, and binary metal systems such as Mg: Ag, Mg: In and Al: Li, Can use the electrode exemplified material connected to the P layer.
In order to obtain highly efficient photoelectric conversion characteristics, for example, when the organic thin film solar cell is a solar cell, it is desirable that at least one surface of the solar cell is sufficiently transparent in the solar spectrum. The transparent electrode is formed using a known conductive material so as to ensure predetermined translucency by a method such as vapor deposition or sputtering. The light transmittance of the electrode on the light receiving surface is preferably 10% or more. In a preferred configuration of the pair of electrode configurations, one of the electrode portions includes a metal having a high work function, and the other includes a metal having a low work function.
2.有機化合物層
p層、p材料とn材料の混合層又はn層のいずれかである。本発明の材料を有機化合物層に使用するとき、具体的には、下部電極/本発明の材料の単独層/上部電極や、下部電極/本発明の材料と、後述するn層材料又はp層材料の混合層/上部電極等の構成が挙げられる。
2. Organic compound layer One of a p layer, a mixed layer of p material and n material, or an n layer. When the material of the present invention is used for the organic compound layer, specifically, the lower electrode / the single layer of the material of the present invention / the upper electrode, the lower electrode / the material of the present invention, and the n layer material or p layer described later. Examples include a mixed layer / top electrode material.
3.p層、n層、i層
本発明の材料をp層に用いるときは、n層は特に限定されないが、電子受容体としての機能を有する化合物が好ましい。例えば有機化合物であれば、C60等のフラーレン誘導体、カーボンナノチューブ、ペリレン誘導体、多環キノン、キナクリドン等、高分子系ではCN−ポリ(フェニレン−ビニレン)、MEH−CN−PPV、−CN基又はCF3基含有ポリマー、それらの−CF3置換ポリマー、ポリ(フルオレン)誘導体等を挙げることができる。電子の移動度が高い材料が好ましい。さらに、好ましくは、電子親和力が小さい材料が好ましい。このように電子親和力の小さい材料をn層として組み合わせることで充分な開放端電圧を実現することができる。
3. p layer, n layer, i layer When the material of the present invention is used for the p layer, the n layer is not particularly limited, but a compound having a function as an electron acceptor is preferable. For example, if the organic compound, fullerene derivatives such as C 60, carbon nanotube, perylene derivatives, polycyclic quinone, quinacridone, the polymeric CN- poly (phenylene - vinylene), MEH-CN-PPV, -CN group or CF 3 group-containing polymers, their -CF 3 substituted polymers, poly (fluorene) derivatives and the like can be mentioned. A material having high electron mobility is preferred. Further, a material having a small electron affinity is preferable. Thus, a sufficient open-circuit voltage can be realized by combining materials having a small electron affinity as the n layer.
また、無機化合物であれば、n型特性の無機半導体化合物を挙げることができる。具体的には、n−Si、GaAs、CdS、PbS、CdSe、InP、Nb2O5,WO3,Fe2O3等のドーピング半導体及び化合物半導体、また、二酸化チタン(TiO2)、一酸化チタン(TiO)、三酸化二チタン(Ti2O3)等の酸化チタン、酸化亜鉛(ZnO)、酸化スズ(SnO2)等の導電性酸化物が挙げられ、これらのうちの1種又は2種以上を組み合わせて用いてもよい。好ましくは、酸化チタン、特に好ましくは、二酸化チタンを用いる。 Moreover, if it is an inorganic compound, the inorganic semiconductor compound of an n-type characteristic can be mentioned. Specifically, doped semiconductors and compound semiconductors such as n-Si, GaAs, CdS, PbS, CdSe, InP, Nb 2 O 5 , WO 3 , Fe 2 O 3 , titanium dioxide (TiO 2 ), monoxide Examples include titanium oxide such as titanium (TiO) and dititanium trioxide (Ti 2 O 3 ), and conductive oxides such as zinc oxide (ZnO) and tin oxide (SnO 2 ). You may use combining more than a seed. Preference is given to using titanium oxide, particularly preferably titanium dioxide.
本発明の材料をn層に用いるときは、p層は特に限定されないが、正孔受容体としての機能を有する化合物が好ましい。例えば有機化合物であれば、N,N’−ビス(3−トリル)−N,N’−ジフェニルベンジジン(mTPD)、N,N’−ジナフチル−N,N’−ジフェニルベンジジン(NPD)、4,4’,4’’−トリス(フェニル−3−トリルアミノ)トリフェニルアミン(MTDATA)等に代表されるアミン化合物、フタロシアニン(Pc)、銅フタロシアニン(CuPc)、亜鉛フタロシアニン(ZnPc)、チタニルフタロシアニン(TiOPc)等のフタロシアニン類、オクタエチルポルフィリン(OEP)、白金オクタエチルポルフィリン(PtOEP)、亜鉛テトラフェニルポルフィリン(ZnTPP)等に代表されるポルフィリン類、高分子化合物であれば、ポリヘキシルチオフェン(P3HT)、メトキシエチルヘキシロキシフェニレンビニレン(MEHPPV)等の主鎖型共役高分子類、ポリビニルカルバゾール等に代表される側鎖型高分子類等が挙げられる。 When the material of the present invention is used for the n layer, the p layer is not particularly limited, but a compound having a function as a hole acceptor is preferable. For example, for an organic compound, N, N′-bis (3-tolyl) -N, N′-diphenylbenzidine (mTPD), N, N′-dinaphthyl-N, N′-diphenylbenzidine (NPD), 4, Amine compounds represented by 4 ′, 4 ″ -tris (phenyl-3-tolylamino) triphenylamine (MTDATA), etc., phthalocyanine (Pc), copper phthalocyanine (CuPc), zinc phthalocyanine (ZnPc), titanyl phthalocyanine (TiOPc) ), Phthalocyanines such as octaethylporphyrin (OEP), platinum octaethylporphyrin (PtOEP), zinc tetraphenylporphyrin (ZnTPP) and the like, and polymer compounds such as polyhexylthiophene (P3HT), Methoxyethylhexyloxyphe Vinylene (MEHPPV) main chain type conjugated polymers such as side chain type polymers such as represented by polyvinyl carbazole, and the like.
本発明の材料をi層に用いるときは、上記p層化合物もしくはn層化合物と混合してi層を形成してもよいが、本発明の材料を単独でi層として用いることもできる。その場合のp層もしくはn層は、上記例示化合物のいずれも用いることができる。 When the material of the present invention is used for the i layer, the i layer may be formed by mixing with the p layer compound or the n layer compound, but the material of the present invention can also be used alone as the i layer. In this case, any of the above exemplary compounds can be used for the p layer or the n layer.
4.バッファー層
一般に、有機薄膜太陽電池は総膜厚が薄いことが多く、そのため上部電極と下部電極が短絡し、セル作製の歩留まりが低下することが多い。このような場合には、バッファー層を積層することによってこれを防止することが好ましい。
バッファー層には、本発明の材料が好ましいが、他の化合物としては、膜厚を厚くしても短絡電流が低下しないようにキャリア移動度が充分に高い化合物が好ましい。例えば、低分子化合物であれば下記に示すNTCDAに代表される芳香族環状酸無水物等が挙げられ、高分子化合物であればポリ(3,4−エチレンジオキシ)チオフェン:ポリスチレンスルホネート(PEDOT:PSS)、ポリアニリン:カンファースルホン酸(PANI:CSA)等に代表される公知の導電性高分子等が挙げられる。
For the buffer layer, the material of the present invention is preferable, but as the other compound, a compound having sufficiently high carrier mobility is preferable so that the short-circuit current does not decrease even when the film thickness is increased. For example, if it is a low molecular compound, the aromatic cyclic acid anhydride represented by NTCDA shown below etc. will be mentioned, and if it is a high molecular compound, poly (3,4-ethylenedioxy) thiophene: polystyrene sulfonate (PEDOT: PSS), polyaniline: camphorsulfonic acid (PANI: CSA), and other known conductive polymers.
5.基板
基板は、機械的、熱的強度を有し、透明性を有するものが好ましい。例えば、ガラス基板及び透明性樹脂フィルムがある。透明性樹脂フィルムとしては、ポリエチレン、エチレン−酢酸ビニル共重合体、エチレン−ビニルアルコール共重合体、ポリプロピレン、ポリスチレン、ポリメチルメタアクリレート、ポリ塩化ビニル、ポリビニルアルコール、ポリビニルブチラール、ナイロン、ポリエーテルエーテルケトン、ポリサルホン、ポリエーテルサルフォン、テトラフルオロエチレン−パーフルオロアルキルビニルエーテル共重合体、ポリビニルフルオライド、テトラフルオロエチレン−エチレン共重合体、テトラフルオロエチレン−ヘキサフルオロプロピレン共重合体、ポリクロロトリフルオロエチレン、ポリビニリデンフルオライド、ポリエステル、ポリカーボネート、ポリウレタン、ポリイミド、ポリエーテルイミド、ポリイミド、ポリプロピレン等が挙げられる。
5). Substrate The substrate preferably has mechanical and thermal strength and transparency. For example, there are a glass substrate and a transparent resin film. Transparent resin films include polyethylene, ethylene-vinyl acetate copolymer, ethylene-vinyl alcohol copolymer, polypropylene, polystyrene, polymethyl methacrylate, polyvinyl chloride, polyvinyl alcohol, polyvinyl butyral, nylon, polyether ether ketone. , Polysulfone, polyethersulfone, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer, polyvinyl fluoride, tetrafluoroethylene-ethylene copolymer, tetrafluoroethylene-hexafluoropropylene copolymer, polychlorotrifluoroethylene, Polyvinylidene fluoride, polyester, polycarbonate, polyurethane, polyimide, polyetherimide, polyimide, polypropylene, etc. It is.
本発明の有機薄膜太陽電池の各層の形成は、真空蒸着、スパッタリング、プラズマ、イオンプレーティング等の乾式成膜法やスピンコーティング、ディップコート、キャスティング、ロールコート、フローコーティング、インクジェット等の湿式成膜法を適用することができる。
各層の膜厚は特に限定されないが、適切な膜厚に設定する。一般に有機薄膜の励起子拡散長は短いことが知られているため、膜厚が厚すぎると励起子がヘテロ界面に到達する前に失活してしまうため光電変換効率が低くなる。膜厚が薄すぎるとピンホール等が発生してしまうため、充分なダイオード特性が得られないため、変換効率が低下する。通常の膜厚は1nmから10μmの範囲が適しているが、5nmから0.2μmの範囲がさらに好ましい。
The formation of each layer of the organic thin film solar cell of the present invention is performed by a dry film formation method such as vacuum deposition, sputtering, plasma, ion plating, or wet film formation such as spin coating, dip coating, casting, roll coating, flow coating, and ink jet. The law can be applied.
The thickness of each layer is not particularly limited, but is set to an appropriate thickness. Since it is generally known that the exciton diffusion length of an organic thin film is short, if the film thickness is too thick, the exciton is deactivated before reaching the heterointerface, resulting in low photoelectric conversion efficiency. If the film thickness is too thin, pinholes and the like are generated, so that sufficient diode characteristics cannot be obtained, resulting in a decrease in conversion efficiency. The normal film thickness is suitably in the range of 1 nm to 10 μm, but more preferably in the range of 5 nm to 0.2 μm.
乾式成膜法の場合、公知の抵抗加熱法が好ましく、混合層の形成には、例えば、複数の蒸発源からの同時蒸着による成膜方法が好ましい。さらに好ましくは、成膜時に基板温度を制御する。 In the case of the dry film forming method, a known resistance heating method is preferable, and for forming the mixed layer, for example, a film forming method by simultaneous vapor deposition from a plurality of evaporation sources is preferable. More preferably, the substrate temperature is controlled during film formation.
湿式成膜法の場合、各層を形成する材料を、適切な溶媒に溶解又は分散させて発光性有機溶液を調製し、薄膜を形成するが、任意の溶媒を使用できる。例えば、ジクロロメタン、ジクロロエタン、クロロホルム、四塩化炭素、テトラクロロエタン、トリクロロエタン、クロロベンゼン、ジクロロベンゼン、クロロトルエン等のハロゲン系炭化水素系溶媒や、ジブチルエーテル、テトラヒドロフラン、ジオキサン、アニソール等のエーテル系溶媒、メタノールやエタノール、プロパノール、ブタノール、ペンタノール、ヘキサノール、シクロヘキサノール、メチルセロソルブ、エチルセロソルブ、エチレングリコール等のアルコール系溶媒、ベンゼン、トルエン、キシレン、エチルベンゼン、ヘキサン、オクタン、デカン、テトラリン等の炭化水素系溶媒、酢酸エチル、酢酸ブチル、酢酸アミル等のエステル系溶媒等が挙げられる。なかでも、炭化水素系溶媒又はエーテル系溶媒が好ましい。また、これらの溶媒は単独で使用しても複数混合して用いてもよい。尚、使用可能な溶媒は、これらに限定されるものではない。 In the case of a wet film forming method, a material for forming each layer is dissolved or dispersed in an appropriate solvent to prepare a luminescent organic solution to form a thin film, and any solvent can be used. For example, halogenated hydrocarbon solvents such as dichloromethane, dichloroethane, chloroform, carbon tetrachloride, tetrachloroethane, trichloroethane, chlorobenzene, dichlorobenzene, chlorotoluene, ether solvents such as dibutyl ether, tetrahydrofuran, dioxane, anisole, methanol, Alcohol solvents such as ethanol, propanol, butanol, pentanol, hexanol, cyclohexanol, methyl cellosolve, ethyl cellosolve, ethylene glycol, hydrocarbon solvents such as benzene, toluene, xylene, ethylbenzene, hexane, octane, decane, tetralin, Examples include ester solvents such as ethyl acetate, butyl acetate, and amyl acetate. Of these, hydrocarbon solvents or ether solvents are preferable. These solvents may be used alone or in combination. In addition, the solvent which can be used is not limited to these.
本発明においては、有機薄膜太陽電池のいずれの有機薄膜層においても、成膜性向上、膜のピンホール防止等のため適切な樹脂や添加剤を使用してもよい。使用の可能な樹脂としては、ポリスチレン、ポリカーボネート、ポリアリレート、ポリエステル、ポリアミド、ポリウレタン、ポリスルフォン、ポリメチルメタクリレート、ポリメチルアクリレート、セルロース等の絶縁性樹脂及びそれらの共重合体、ポリ−N−ビニルカルバゾール、ポリシラン等の光導電性樹脂、ポリチオフェン、ポリピロール等の導電性樹脂を挙げられる。
また、添加剤としては、酸化防止剤、紫外線吸収剤、可塑剤等が挙げられる。
In the present invention, in any organic thin film layer of the organic thin film solar cell, an appropriate resin or additive may be used for improving the film formability and preventing pinholes in the film. Usable resins include polystyrene, polycarbonate, polyarylate, polyester, polyamide, polyurethane, polysulfone, polymethyl methacrylate, polymethyl acrylate, cellulose and other insulating resins and copolymers thereof, poly-N-vinyl. Examples thereof include photoconductive resins such as carbazole and polysilane, and conductive resins such as polythiophene and polypyrrole.
Examples of the additive include an antioxidant, an ultraviolet absorber, and a plasticizer.
[本発明の化合物の合成]
実施例1
下記の反応により化合物A(フタルイミド化合物)を合成した。
Example 1
Compound A (phthalimide compound) was synthesized by the following reaction.
(1)中間体A1の合成
窒素雰囲気下、4−ブロモ−無水フタル酸(15g,66.1mmol)、メチルアミン(40% in H2O)(8.26ml,99.1mmol)、酢酸ナトリウム(8.67g,106mmol)に酢酸(100ml)を加えて6時間加熱撹拌還流した。反応混合物に水(200ml)を加え、沈殿物を濾別して白色固体(15.2g,96%)を得た。
この固体の核磁気共鳴測定(1H−NMR)の結果を以下に示す。
1H−NMR(400MHz,CDCl3,TMS)δ:3.18(s,3H),7.71(d,J8.0,1H),7.84(d,J8.0,1H),7.98(s,1H).
(1) Synthesis of Intermediate A1 Under a nitrogen atmosphere, 4-bromo-phthalic anhydride (15 g, 66.1 mmol), methylamine (40% in H 2 O) (8.26 ml, 99.1 mmol), sodium acetate ( Acetic acid (100 ml) was added to 8.67 g, 106 mmol), and the mixture was heated to reflux with stirring for 6 hours. Water (200 ml) was added to the reaction mixture, and the precipitate was filtered off to obtain a white solid (15.2 g, 96%).
The results of nuclear magnetic resonance measurement ( 1 H-NMR) of this solid are shown below.
1 H-NMR (400 MHz, CDCl 3 , TMS) δ: 3.18 (s, 3H), 7.71 (d, J8.0, 1H), 7.84 (d, J8.0, 1H), 7 .98 (s, 1H).
(2)中間体A2の合成
窒素雰囲気下、中間体A1(10g,41.7mmol)、ビス(ピナコラト)ジボロン(13g,50.0mmol)、1,1’−ビス(ジフェニルホスフィノ)フェロセン]パラジウム(II)ジクロリド ジクロロメタン錯体(0.65g,0.80mmol)、酢酸カリウム(30g,305mmol)、ジオキサン100ml)を加えて80℃で12時間撹拌した。反応混合物に酢酸エチル(300ml)、水(50ml)を加え、有機層を分取、無水硫酸マグネシウムで乾燥、溶媒留去して白色固体を得た。これをカラムクロマトグラフィ(シリカゲル/ヘキサン:酢酸エチル=3:1)で精製して白色固体(8.0g,67%)を得た。
1H−NMR(400MHz,CDCl3,TMS)δ:1.37(s,12H),3.18(s,3H),7.82(d,J8.0,1H),8.14(d,J8.0,1H),8.27(s,1H).
(2) Synthesis of intermediate A2 Under nitrogen atmosphere, intermediate A1 (10 g, 41.7 mmol), bis (pinacolato) diboron (13 g, 50.0 mmol), 1,1′-bis (diphenylphosphino) ferrocene] palladium (II) Dichloride Dichloromethane complex (0.65 g, 0.80 mmol), potassium acetate (30 g, 305 mmol), dioxane 100 ml) was added, and the mixture was stirred at 80 ° C. for 12 hours. Ethyl acetate (300 ml) and water (50 ml) were added to the reaction mixture, the organic layer was separated, dried over anhydrous magnesium sulfate, and the solvent was distilled off to obtain a white solid. This was purified by column chromatography (silica gel / hexane: ethyl acetate = 3: 1) to obtain a white solid (8.0 g, 67%).
1 H-NMR (400 MHz, CDCl 3 , TMS) δ: 1.37 (s, 12H), 3.18 (s, 3H), 7.82 (d, J8.0, 1H), 8.14 (d , J8.0, 1H), 8.27 (s, 1H).
(3)化合物Aの合成
窒素雰囲気下、中間体A2(1.0g,3.8mmol)、1,3−ジブロモベンゼン(0.41g,1.74mmol)、フッ化セシウム(0.79g,5.22mmol)、テトラキス(トリフェニルホスフィン)パラジウム(0)(0.1g,8.7×10−2mmol)、1,2−ジメトキシエタン(17ml)を加えて80℃で6時間撹拌した。反応混合物に水(50ml)を加え、沈殿物を濾別して白色固体(0.15g,21%)である化合物Aを得た。
1H−NMR(400MHz,CDCl3,TMS)δ:3.23(s,6H),7.65(s,J6.8,1H),7.71(d,J6.8,2H),7.88(s,1H),7.65(d,J6.8,1H),7.98(d,J7.6,2H),8.00.(s,2H),8.11(d,J7.6,2H).
(3) Synthesis of Compound A Under a nitrogen atmosphere, intermediate A2 (1.0 g, 3.8 mmol), 1,3-dibromobenzene (0.41 g, 1.74 mmol), cesium fluoride (0.79 g, 5. 22 mmol), tetrakis (triphenylphosphine) palladium (0) (0.1 g, 8.7 × 10 −2 mmol), and 1,2-dimethoxyethane (17 ml) were added and stirred at 80 ° C. for 6 hours. Water (50 ml) was added to the reaction mixture, and the precipitate was filtered off to obtain Compound A as a white solid (0.15 g, 21%).
1 H-NMR (400 MHz, CDCl 3 , TMS) δ: 3.23 (s, 6H), 7.65 (s, J6.8, 1H), 7.71 (d, J6.8, 2H), 7 .88 (s, 1H), 7.65 (d, J6.8, 1H), 7.98 (d, J7.6, 2H), 8.00. (S, 2H), 8.11 (d, J7.6, 2H).
実施例2
下記の反応により化合物B(フタルイミド化合物)を合成した。
Compound B (phthalimide compound) was synthesized by the following reaction.
窒素雰囲気下、実施例1(2)で合成した中間体A2(2.0g,6.97mmol)、4,6−ジクロロピリミジン(0.35g,2.32mmol)、炭酸セシウム(3.4g,10.4mmol)、テトラキス(トリフェニルホスフィン)パラジウム(0)(0.13g,0.12mmol)、1,2−ジメトキシエタン(46ml)を加えて80℃で6時間撹拌した。反応混合物に水(50ml)を加え、沈殿物を濾別して黄色固体(0.54g,58%)である化合物Bを得た。
1H−NMR(400MHz,CDCl3,TMS)δ:3.26(s,6H),8.05(d,J8.0,2H),8.30(s,1H),8.61(d,J8.0,2H),8.64(s,2H),9.45(s,1H).
Intermediate A2 (2.0 g, 6.97 mmol) synthesized in Example 1 (2), 4,6-dichloropyrimidine (0.35 g, 2.32 mmol), cesium carbonate (3.4 g, 10) under nitrogen atmosphere .4 mmol), tetrakis (triphenylphosphine) palladium (0) (0.13 g, 0.12 mmol), and 1,2-dimethoxyethane (46 ml) were added and stirred at 80 ° C. for 6 hours. Water (50 ml) was added to the reaction mixture, and the precipitate was filtered off to obtain Compound B as a yellow solid (0.54 g, 58%).
1 H-NMR (400 MHz, CDCl 3 , TMS) δ: 3.26 (s, 6H), 8.05 (d, J8.0, 2H), 8.30 (s, 1H), 8.61 (d , J8.0, 2H), 8.64 (s, 2H), 9.45 (s, 1H).
実施例3
下記の反応により化合物C(ナフタルイミド化合物)を合成した。
Compound C (naphthalimide compound) was synthesized by the following reaction.
(1)中間体C1の合成
窒素雰囲気下、4−ブロモ−1,8−無水ナフタル酸(10g,36mmol)、メチルアミン(4.5ml,54mmol)、酢酸ナトリウム(4.8g,58mmol)に氷酢酸(110ml)を加えて6時間加熱撹拌還流した。反応混合物に水(200ml)を加え、沈殿物を濾別して白色固体(9.9g,95%)を得た。
1H−NMR(400MHz,CDCl3,TMS)δ:3.56(s,3H),7.85(t,J8.4,1H),8.05(d,J8.0,1H),8.43(d,J8.0,1H),8.58(d,J7.6,1H),8.67(d,J7.6,1H).
(1) Synthesis of Intermediate C1 Under nitrogen atmosphere, 4-bromo-1,8-naphthalic anhydride (10 g, 36 mmol), methylamine (4.5 ml, 54 mmol), sodium acetate (4.8 g, 58 mmol) in ice Acetic acid (110 ml) was added and the mixture was heated to reflux with stirring for 6 hours. Water (200 ml) was added to the reaction mixture, and the precipitate was filtered off to obtain a white solid (9.9 g, 95%).
1 H-NMR (400 MHz, CDCl 3 , TMS) δ: 3.56 (s, 3H), 7.85 (t, J8.4, 1H), 8.05 (d, J8.0, 1H), 8 .43 (d, J8.0, 1H), 8.58 (d, J7.6, 1H), 8.67 (d, J7.6, 1H).
(2)中間体C2の合成
窒素雰囲気下、中間体A1(5.0g,17mmol)、ビス(ピナコラト)ジボロン(4.8g,1.9mmol)、1,1’−ビス(ジフェニルホスフィノ)フェロセン]パラジウム(II)ジクロリド ジクロロメタン錯体(0.70g,0.86mmol)、酢酸カリウム(8.5g,86mmol)、ジオキサン(50ml)を加えて80℃で12時間撹拌した。反応混合物にジクロロメタン(150ml)、水(50ml)を加え、有機層を分取、無水硫酸マグネシウムで乾燥、溶媒留去して淡黄色固体を得た。これをカラムクロマトグラフィ(シリカゲル/ヘキサン:ジクロロメタン=1:3)で精製して白色固体(3.7g,65%)を得た。
1H−NMR(400MHz,CDCl3,TMS)δ:1.45(s,12H),3.57(s,3H),7.78(t,J8.4,1H),8.30(d,J7.6,1H),8.62(d,J7.2,1H),9.12(d,J8.4,1H).
(2) Synthesis of Intermediate C2 Under a nitrogen atmosphere, intermediate A1 (5.0 g, 17 mmol), bis (pinacolato) diboron (4.8 g, 1.9 mmol), 1,1′-bis (diphenylphosphino) ferrocene Palladium (II) dichloride Dichloromethane complex (0.70 g, 0.86 mmol), potassium acetate (8.5 g, 86 mmol) and dioxane (50 ml) were added and stirred at 80 ° C. for 12 hours. Dichloromethane (150 ml) and water (50 ml) were added to the reaction mixture, the organic layer was separated, dried over anhydrous magnesium sulfate, and the solvent was distilled off to obtain a pale yellow solid. This was purified by column chromatography (silica gel / hexane: dichloromethane = 1: 3) to obtain a white solid (3.7 g, 65%).
1 H-NMR (400 MHz, CDCl 3 , TMS) δ: 1.45 (s, 12H), 3.57 (s, 3H), 7.78 (t, J8.4, 1H), 8.30 (d , J7.6, 1H), 8.62 (d, J7.2, 1H), 9.12 (d, J8.4, 1H).
(3)化合物Cの合成
窒素雰囲気下、中間体A2(0.4g,1.2mmol)」、1,3−ジブロモベンゼン(0.1g,0.5mmol)、テトラキス(トリフェニルホスフィン)パラジウム(0)(0.03g,2.8×10−2mmol)を1,2−ジメトキシエタン(10ml)に懸濁し、2M炭酸ナトリウム水溶液(2.1g,21mmol/10ml)を加えて80℃で6時間撹拌した。反応混合物に水(50ml)を加え、沈殿物を濾別して白色固体を得た。次にこれにジクロロメタン(150ml)で再結晶して白色固体(0.15g,65%)である化合物Cを得た。
1H−NMR(400MHz,CDCl3,TMS)δ:3.62(s,6H),7.86(t,J7.2,2H),8.03(d,J7.2,2H),8.06(s,1H),8.72−8.76(m,6H),9.67(s,1H).
(3) Synthesis of Compound C In a nitrogen atmosphere, intermediate A2 (0.4 g, 1.2 mmol) ”, 1,3-dibromobenzene (0.1 g, 0.5 mmol), tetrakis (triphenylphosphine) palladium (0 ) (0.03 g, 2.8 × 10 −2 mmol) was suspended in 1,2-dimethoxyethane (10 ml), 2M aqueous sodium carbonate solution (2.1 g, 21 mmol / 10 ml) was added, and the mixture was heated at 80 ° C. for 6 hours. Stir. Water (50 ml) was added to the reaction mixture, and the precipitate was filtered off to obtain a white solid. This was then recrystallized from dichloromethane (150 ml) to obtain Compound C as a white solid (0.15 g, 65%).
1 H-NMR (400 MHz, CDCl 3 , TMS) δ: 3.62 (s, 6H), 7.86 (t, J7.2, 2H), 8.03 (d, J7.2, 2H), 8 .06 (s, 1H), 8.72-8.76 (m, 6H), 9.67 (s, 1H).
実施例4
下記の反応により化合物D(ナフタルイミド化合物)を合成した。
Compound D (naphthalimide compound) was synthesized by the following reaction.
ナフタルイミド化合物Dの合成
窒素雰囲気下、実施例3(2)で合成した中間体C2(1.0g,3.0mmol)、4,6−ジクロロピリミジン(0.2g,1.4mmol)、テトラキス(トリフェニルホスフィン)パラジウム(0)(0.1g,9.0×10−2mmol)を1,2−ジメトキシエタン(30ml)に懸濁し、2M炭酸ナトリウム水溶液(2.1g,21mmol/10ml)を加えて80℃で6時間撹拌した。反応混合物に水(50ml)を加え、沈殿物を濾別して白色固体を得た。次にこれにジクロロメタン(150ml)で再結晶して白色固体(0.65g,87%)である化合物Dを得た。
1H−NMR(400MHz,CDCl3,TMS)δ:3.60(s,6H),7.68(d,J6.8,2H),7.69(d,J6.8,1H),7.75(d,J7.2,2H),7.78(t,J8.4,2H),7.81(s,1H),7.75(s,1H),8.36(d,J8.4,2H),8.67(d,J7.6,2H),8.69(d,J7.6,2H).
Synthesis of Naphthalimide Compound D Intermediate C2 (1.0 g, 3.0 mmol), 4,6-dichloropyrimidine (0.2 g, 1.4 mmol), tetrakis (synthesized in Example 3 (2) under nitrogen atmosphere Triphenylphosphine) palladium (0) (0.1 g, 9.0 × 10 −2 mmol) was suspended in 1,2-dimethoxyethane (30 ml), and 2M aqueous sodium carbonate solution (2.1 g, 21 mmol / 10 ml) was added. In addition, the mixture was stirred at 80 ° C. for 6 hours. Water (50 ml) was added to the reaction mixture, and the precipitate was filtered off to obtain a white solid. This was then recrystallized from dichloromethane (150 ml) to obtain Compound D as a white solid (0.65 g, 87%).
1 H-NMR (400 MHz, CDCl 3 , TMS) δ: 3.60 (s, 6H), 7.68 (d, J6.8, 2H), 7.69 (d, J6.8, 1H), 7 .75 (d, J7.2, 2H), 7.78 (t, J8.4, 2H), 7.81 (s, 1H), 7.75 (s, 1H), 8.36 (d, J8 .4, 2H), 8.67 (d, J7.6, 2H), 8.69 (d, J7.6, 2H).
実施例5
下記の反応により化合物E(ナフタルイミド化合物)を合成した。
Compound E (naphthalimide compound) was synthesized by the following reaction.
窒素雰囲気下、中間体C2(1.0g,3.0mmol)、1,4−ジブロモベンゼン(0.32g,1.35mmol)、テトラキス(トリフェニルホスフィン)パラジウム(0)(0.078g,6.74×10−2mmol)を1,2−ジメトキシエタン(14ml)に懸濁し、2M炭酸ナトリウム水溶液(2.1g,21mmol/10ml)を加えて80℃で6時間撹拌した。反応混合物に水(50ml)を加え、沈殿物を濾別して白色固体を得た。次にこれにジクロロメタン(150ml)で再結晶して黄色固体(0.61g,91%)である化合物Eを得た。
1H−NMR(400MHz,CDCl3,TMS)δ:3.62(s,6H),7.61(s,4H),7.81(d,J8.0,2H),7.86(d,J8.0,2H),8.45(d,J8.0,2H),8.70(d,J8.0,2H)8.72(d,J8.0,2H).
Under a nitrogen atmosphere, intermediate C2 (1.0 g, 3.0 mmol), 1,4-dibromobenzene (0.32 g, 1.35 mmol), tetrakis (triphenylphosphine) palladium (0) (0.078 g, 6. 74 × 10 −2 mmol) was suspended in 1,2-dimethoxyethane (14 ml), 2M aqueous sodium carbonate solution (2.1 g, 21 mmol / 10 ml) was added, and the mixture was stirred at 80 ° C. for 6 hours. Water (50 ml) was added to the reaction mixture, and the precipitate was filtered off to obtain a white solid. This was then recrystallized from dichloromethane (150 ml) to obtain Compound E as a yellow solid (0.61 g, 91%).
1 H-NMR (400 MHz, CDCl 3 , TMS) δ: 3.62 (s, 6H), 7.61 (s, 4H), 7.81 (d, J8.0, 2H), 7.86 (d , J8.0, 2H), 8.45 (d, J8.0, 2H), 8.70 (d, J8.0, 2H) 8.72 (d, J8.0, 2H).
実施例6
下記の反応により化合物F(無水ナフタル酸化合物)を合成した。
Compound F (a naphthalic anhydride compound) was synthesized by the following reaction.
窒素雰囲気下、化合物C(2.0g,4.0mmol)、水酸化カリウム(45g,800mmol)、イソプロパノール(150ml)を加えて6時間加熱撹拌還流した。その後、反応混合物に酢酸(250ml)を加え、沈殿物を濾別して黄色固体(1.8g,96%)である化合物Fを得た。
1H−NMR(400MHz,CDCl3,TMS)δ:7.61(s,1H),7.67(s,1H),7.71(d,J7.2,2H),7.81(d,J8.0,2H),7.86(d,J8.0,2H),8.45(d,J8.0,2H),8.70(d,J8.0,2H)8.72(d,J8.0,2H).
Under a nitrogen atmosphere, Compound C (2.0 g, 4.0 mmol), potassium hydroxide (45 g, 800 mmol), and isopropanol (150 ml) were added, and the mixture was heated to reflux with stirring for 6 hours. Thereafter, acetic acid (250 ml) was added to the reaction mixture, and the precipitate was filtered off to obtain Compound F as a yellow solid (1.8 g, 96%).
1 H-NMR (400 MHz, CDCl 3 , TMS) δ: 7.61 (s, 1H), 7.67 (s, 1H), 7.71 (d, J7.2, 2H), 7.81 (d , J8.0, 2H), 7.86 (d, J8.0, 2H), 8.45 (d, J8.0, 2H), 8.70 (d, J8.0, 2H) 8.72 ( d, J8.0, 2H).
[有機薄膜太陽電池の作製]
実施例7−12
25mm×75mm×0.7mm厚のITO透明電極付きガラス基板をイソプロピルアルコール中で超音波洗浄を5分間行なった後、UVオゾン洗浄を30分間実施した。洗浄後の透明電極ライン付きガラス基板を真空蒸着装置の基板ホルダーに装着し、まず下部電極である透明電極ラインが形成されている側の面上に、透明電極を覆うようにして膜厚30nmのCuPcを抵抗加熱蒸着により、1Å/sで成膜した。続けてその上に膜厚60nmのC60を抵抗加熱蒸着により1Å/sで成膜した。
C60膜の上に、表1に示す化合物A〜Fのいずれかを抵抗加熱蒸着により、膜厚10nm、1Å/sで成膜した。最後に、連続して対向電極として金属Alを膜厚80nm蒸着させ、有機薄膜太陽電池を形成した。面積は0.05cm2であった。
作製した有機薄膜太陽電池をAM1.5条件下(光強度100mW/cm2)でI−V特性を測定した。その結果、開放端電圧(Voc)、短絡電流密度(Jsc)、曲線因子(FF)、変換効率(η)を表1に示す。
[Production of organic thin-film solar cells]
Examples 7-12
A glass substrate with an ITO transparent electrode having a thickness of 25 mm × 75 mm × 0.7 mm was subjected to ultrasonic cleaning in isopropyl alcohol for 5 minutes, and then UV ozone cleaning was performed for 30 minutes. A glass substrate with a transparent electrode line after cleaning is mounted on a substrate holder of a vacuum deposition apparatus, and a film having a film thickness of 30 nm is first covered on the surface on the side where the transparent electrode line as the lower electrode is formed so as to cover the transparent electrode. CuPc was deposited at 1 Å / s by resistance heating vapor deposition. Subsequently, C 60 having a film thickness of 60 nm was formed thereon at 1 Å / s by resistance heating vapor deposition.
On the C60 film, any one of the compounds A to F shown in Table 1 was formed at a thickness of 10 nm and 1 Å / s by resistance heating vapor deposition. Finally, metal Al was deposited in a thickness of 80 nm continuously as a counter electrode to form an organic thin film solar cell. The area was 0.05 cm 2 .
The IV characteristic was measured for the produced organic thin film solar cell under AM1.5 conditions (light intensity 100 mW / cm 2 ). As a result, open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF), and conversion efficiency (η) are shown in Table 1.
尚、光電変換効率は下記式によって導出した。
比較例1
化合物Aの膜を形成しなかった他は、実施例1と同様に有機薄膜太陽電池を作製し評価した。結果を表1に示す。
Comparative Example 1
An organic thin film solar cell was prepared and evaluated in the same manner as in Example 1 except that the film of Compound A was not formed. The results are shown in Table 1.
比較例2
実施例1の化合物Aをフッ化リチウム(LiF)に換えた他は、実施例1と同様に有機薄膜太陽電池を作製し評価した。結果を表1に示す。
Comparative Example 2
An organic thin-film solar cell was prepared and evaluated in the same manner as in Example 1 except that Compound A in Example 1 was replaced with lithium fluoride (LiF). The results are shown in Table 1.
表1からわかるように、本発明の化合物は比較例に比べ変換効率が向上しており、優れた太陽電池特性を示すことが明らかになった。 As can be seen from Table 1, the conversion efficiency of the compound of the present invention is improved as compared with the comparative example, and it is clear that the solar cell characteristics are excellent.
本発明の化合物は、光電変換素子用材料、特に、電子輸送材料として好適である。また、有機薄膜太陽電池材料として好適である。
本発明の有機薄膜太陽電池は、時計、携帯電話及びモバイルパソコン等に使用できる。
The compound of the present invention is suitable as a material for a photoelectric conversion element, particularly as an electron transport material. Moreover, it is suitable as an organic thin film solar cell material.
The organic thin film solar cell of the present invention can be used for watches, mobile phones, mobile personal computers and the like.
Claims (7)
Rgはそれぞれ、置換もしくは無置換の、ベンゼン環又はナフタレン環であり、
Xはそれぞれ、酸素原子、又はN−R1であり、
R1はそれぞれ、水素原子、ハロゲン原子、シアノ基、C1〜C20の置換もしくは無置換のアルキル基、C2〜C20の置換もしくは無置換のアルケニル基、C2〜C20の置換もしくは無置換のアルキニル基、C6〜C20の置換もしくは無置換のアリール基、C3〜C20の置換もしくは無置換のヘテロアリール基、C1〜C20の置換もしくは無置換のアルキルオキシ基、C6〜C20の置換もしくは無置換のアリールオキシ基、C6〜C20の置換もしくは無置換のアリールアミノ基、C1〜C20の置換もしくは無置換のアルキルアミノ基であり、
nは2又は3である。) A compound represented by the following formula (1).
Each Rg is a substituted or unsubstituted benzene ring or naphthalene ring;
Each X is an oxygen atom or N—R 1 ;
R 1 is a hydrogen atom, a halogen atom, a cyano group, a C 1 to C 20 substituted or unsubstituted alkyl group, a C 2 to C 20 substituted or unsubstituted alkenyl group, a C 2 to C 20 substituted or unsubstituted alkynyl groups, C substituted or unsubstituted aryl group having 6 ~C 20, C 3 substituted or unsubstituted heteroaryl group -C 20, a substituted or unsubstituted alkyl group having C 1 -C 20, substituted or unsubstituted aryloxy group C 6 -C 20, a substituted or unsubstituted arylamino group C 6 -C 20, a substituted or unsubstituted alkylamino group C 1 -C 20,
n is 2 or 3. )
aは0〜4の整数、bは0〜3の整数、cは0〜2の整数、dは0〜2の整数、eは0又は1、fは0〜2の整数、gは0〜2、hは0〜2の整数、iは0〜2の整数、jは0又は1である。
a〜iが2以上の場合、2以上のR11〜R20はそれぞれ同一でも異なっていてもよい。)] The compound according to claim 2, wherein the compound represented by the formula (1) is a compound represented by the following formula (1B) or (1C).
a is an integer of 0 to 4, b is an integer of 0 to 3, c is an integer of 0 to 2, d is an integer of 0 to 2, e is 0 or 1, f is an integer of 0 to 2, and g is 0 to 0 2, h is an integer from 0 to 2, i is an integer from 0 to 2, and j is 0 or 1.
When a to i are 2 or more, two or more R 11 to R 20 may be the same or different. )]
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