JP2010251361A - Method of manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which an insulating film securing sufficient insulation and flatness can be provided on a metal foil substrate without making a process time longer. <P>SOLUTION: The method of manufacturing the semiconductor device includes a step of sticking an insulating sheet type resin 1 on the metal foil substrate 5 and forming a semiconductor element on the stuck sheet type resin 1. Further, the method includes a step of curing the sheet type resin 1 after sticking the sheet type resin 1 and before forming the semiconductor element. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method suitable for a semiconductor device having a structure in which elements are arrayed on a flexible thin substrate.

  In a thin semiconductor device having an element using an organic material such as an organic thin film transistor (organic TFT), by using a metal foil substrate having a high gas barrier property, entry of oxygen and water vapor from the outside can be prevented. It is known that deterioration is suppressed. In addition, since the metal foil substrate has a high thermal conductivity, the heat dissipation of heat generated when the element is driven is also high. Moreover, the metal foil substrate having a film thickness of about 25 to 100 μm is flexible, and the semiconductor device on which the element is formed can be curved.

  In a semiconductor device using such a metal foil substrate, an element is provided on an upper portion of the metal foil substrate, which is an excellent electrical conductor, via an insulating film. For the formation of an insulating film on a metal foil substrate, for example, SOG film formation on a metal foil substrate, coating film formation of a resin material, and CVD film formation of an inorganic / organic insulating film are applied (non-discussed below) (See Patent Document 1).

Journal of Society for Information Displays 15, 445 (2007)

  However, it is very difficult to form an insulating film with sufficient insulation and flatness on a metal foil substrate, and it takes a very long time to form such an insulating film. This becomes more prominent when the substrate size is increased.

  Therefore, an object of the present invention is to provide a method for manufacturing a semiconductor device that can provide an insulating film with sufficient insulation and flatness on a metal foil substrate without increasing the process time. .

  In order to achieve such an object, the method of manufacturing a semiconductor device of the present invention includes a step of bonding an insulating sheet-shaped resin on a metal foil substrate, and a step of forming a semiconductor element on the sheet-shaped resin. Do.

  In such a manufacturing method, since the sheet-like resin previously formed into a sheet shape is bonded onto the metal foil substrate, there is no need to perform a step of forming an insulating film on the metal foil substrate. Therefore, it is possible to cover the surface of the metal foil substrate with an insulating film excellent in insulation and flatness in a short time without depending on the area.

  As described above, according to the present invention, when manufacturing a semiconductor device in which semiconductor elements are arranged while maintaining insulation on a flexible substrate using a metal foil substrate, the manufacturing time is shortened and the area is increased. Can be achieved. As a result, the metal foil can be used as a substrate even in a mass production process of a semiconductor device using a large substrate.

It is sectional process drawing (the 1) explaining the manufacturing process of 1st Embodiment. FIG. 6 is a cross-sectional process diagram (part 2) illustrating the manufacturing process of the first embodiment. It is a sample figure for confirming insulation of a substrate obtained by pasting together. It is a voltage-current graph which shows the evaluation result of the insulation of the board | substrate obtained by bonding. It is sectional process drawing which shows the characterizing part of the manufacturing process of 2nd Embodiment. It is sectional process drawing which shows the characteristic part of the manufacturing process of 3rd Embodiment. It is sectional process drawing which shows the characterizing part of the manufacturing process of 4th Embodiment. It is sectional process drawing which shows the characterizing part of the manufacturing process of 5th Embodiment.

Hereinafter, embodiments of the present invention will be described in the following order based on the drawings.
1. First embodiment (example using sheet-like resin sandwiched between separators)
2. Second Embodiment (Example using sheet-like resin formed on a substrate)
3. Third embodiment (example in which an adhesive is provided between a metal foil substrate and a sheet-like resin)
4). Fourth Embodiment (Example of modifying the surface of a metal foil substrate)
5). Fifth Embodiment (Example of film-forming treatment on the surface of a metal foil substrate)

<< 1. First Embodiment >>
1 and 2 are cross-sectional process diagrams for explaining the method of manufacturing the semiconductor device according to the first embodiment. The manufacturing method of the first embodiment will be described below based on these drawings.

  First, as shown in FIG. 1A, a sheet-like resin 1 is prepared. The sheet-like resin 1 used here is preferably configured using a resin having a low water absorption rate and low gas permeability in order to ensure barrier properties. In addition, in order to ensure electrical insulation, it is necessary to use a material having a small amount of impurities such as ionic impurities and having good insulation characteristics.

  Moreover, the sheet-like resin 1 may be in a state of a precursor before being completely cured, and thereby has adhesiveness. Further, the sheet-like resin 1 is a material that is cured by ultraviolet irradiation, such as photo radical polymerization, photo anion polymerization, photo cation polymerization, photo ene / thiol polymerization, photo radical crosslinking, or the like, or thermal radical polymerization, thermal cation polymerization, thermal anion polymerization. A material that is cured by heat such as thermal crosslinking is used.

  Examples of the resin material constituting the sheet-like resin 1 include epoxy resins, acrylic resins, urethane resins, phenol resins, urea / melamine resins, polyimide resins, vinyl resins, nitrile resins, and composite resins thereof.

  Further, in order to prevent gas from entering from the end face of the sheet-like resin 1, the thickness of the sheet-like resin 1 is preferably 50 μm or less.

  The sheet-like resin 1 as described above is stored in a state of being sandwiched between the separators 3a and 3b.

  Then, as shown in FIG. 1 (2), one main surface side of the sheet-shaped resin 1 is exposed by peeling off one separator 3 a from the sheet-shaped resin 1.

  Next, as shown in FIG. 1 (3), a metal foil substrate 5 is bonded to the exposed surface side of the sheet-like resin 1. At this time, for example, bonding is performed by pressure bonding using a bonding machine such as a vacuum laminator. As the metal foil substrate 5, it is preferable that the metal foil substrate 5 bend flexibly while having good surface flatness even if it is a thin film. Examples of such a metal foil substrate 5 include a metal foil made of stainless steel.

  Thereafter, as shown in FIG. 1 (4), the separator 3 b is peeled off from the sheet-like resin 1 bonded to the metal foil substrate 5 to expose one surface of the sheet-like resin 1. This exposed surface becomes a process surface.

  Then, as shown in FIG. 1 (5), the sheet-like resin 1 is cured. As the curing treatment at this time, it is selected to perform ultraviolet irradiation, heat treatment, or both depending on the resin material constituting the sheet-like resin 1.

  As described above, the flexible support substrate 7 formed by covering the metal foil substrate 5 with the cured insulating sheet-like resin 1 is formed.

  Next, a procedure for forming a semiconductor element on such a support substrate 7 will be described. Here, the formation of the organic TFT having the top contact / bottom gate structure as the semiconductor element is described. However, the semiconductor element formed on the support substrate 7 is not limited to this, and other organic TFTs in the stacking order may be used. There may be, and it is not limited to organic TFT.

  First, as shown in FIG. 2A, the gate electrode 11 is formed on the insulating sheet-like resin 1 in the produced support substrate 7. The gate electrode 11 is formed, for example, by depositing a metal material film such as gold (Au) by a sputtering method or another film formation method, and then forming a resist pattern on the metal material film by a photolithography method and using this as a mask. Then, the metal material film is formed by etching. In addition, the formation method of the gate electrode 11 is not limited, For example, you may apply the printing method.

  Next, as shown in FIG. 2B, a gate insulating film 13 is formed on the sheet-like resin 1 so as to cover the gate electrode 11. For example, if the gate insulating film 13 is made of an inorganic material such as silicon oxide or silicon nitride, the gate insulating film 13 is formed by CVD or sputtering. On the other hand, in the case of the gate insulating film 13 made of an organic polymer material such as polyvinylphenol, PMMA, polyimide, and fluorine resin, the film is formed by a coating method or a printing method.

  Next, as shown in FIG. 2C, the organic semiconductor layer 15 is formed on the gate insulating film 13 at a position overlapping with the gate electrode 11. The organic semiconductor layer 15 can be formed by, for example, a printing method or mask vapor deposition, and may be formed by a method suitable for the organic semiconductor material used here. For example, if bentacene is used, the pattern is formed by mask vapor deposition. Can be formed. The organic semiconductor layer 15 may be formed by forming an organic semiconductor material film in addition to pattern formation by a printing method or mask vapor deposition method, and pattern etching the material film.

  Thereafter, as shown in FIG. 2 (4), a source electrode 17s having a shape in which an end is stacked on the organic semiconductor layer 15 beside the gate electrode 11 on the gate insulating film 13 provided with the organic semiconductor layer 15; A drain electrode 17d is formed. The source electrode 17s and the drain electrode 17d can be formed in the same manner as the gate electrode 11.

  As described above, the semiconductor device 21 in which the organic TFT 19 having the top contact / bottom gate structure is formed on the flexible support substrate 7 in which the metal foil substrate 5 is covered with the insulating sheet-like resin 1 is obtained. In this semiconductor device 21, gas permeation from the outside on the metal foil substrate 5 side to the organic TFT 19 side is prevented from using the metal foil substrate 5 as a substrate.

  According to the first embodiment described above, the sheet-shaped resin 1 previously formed into a sheet shape is bonded onto the metal foil substrate 5 to form the support substrate 7 on which the organic TFTs 19 are formed. . For this reason, it is not necessary to perform a process of forming an insulating film on the metal foil substrate 5 when the support substrate 7 is manufactured.

  Therefore, the surface of the metal foil substrate 5 is not affected by the film formation time of the sheet-shaped resin 1 by preparing the sheet-shaped resin 1 having a desired size that has both insulating properties and flatness in advance. It is possible to produce a support substrate 7 that is covered with a high-quality insulating film (sheet-like resin 1). This also makes it possible to produce a support substrate 7 in which an insulating sheet-like resin 1 having a good yield and no defects is provided on a metal foil substrate having a high barrier property against gas permeation from the outside.

  As a result, shortening the manufacturing time and increasing the area when manufacturing the semiconductor device 21 in which the organic TFTs are arranged on the flexible support substrate 7 using the metal foil substrate 5 while maintaining the insulating property are achieved. Is possible. As a result, the metal foil can be used as a substrate even in a mass production process of a semiconductor device using a large substrate. Furthermore, as described above, the semiconductor device 21 can be manufactured using the metal foil substrate 5 having a high gas barrier property, and as a result, the lifetime of the semiconductor element (for example, the organic TFT 19) can be greatly extended.

  Here, as shown in FIG. 3, a description will be given of the result of producing a support substrate 7 in which a sheet-like resin 1 is bonded to a metal foil substrate 5 and examining its insulation. The metal foil substrate 5 was made of stainless steel (SUS). The sheet-like resin 1 is made of a UV curable resin having a film thickness of 20 μm, and is cured by UV irradiation after being pressed onto the metal foil substrate 5 using a vacuum laminator.

  An aluminum (Al) film 11a is deposited on the sheet-like resin 1 side of the support substrate 7 to produce a capacitor structure, and a voltage is applied between the aluminum film 11a and the metal foil substrate 5 to obtain a current value. It was measured.

  As a result, as shown in FIG. 4, the sheet-like resin 1 maintains good insulation even with an applied voltage of 30 V, and the sheet is uniformly formed on the 4-inch metal foil substrate 5 without defects such as pinholes. It was confirmed that the resin 1 was provided.

Further, an organic TFT 19 using the organic semiconductor layer 15 made of pentacene was formed on the support substrate 7 by the procedure described with reference to FIG. Thereafter, when the formed organic TFT 19 was driven with a driving voltage of ± 30 V, it was confirmed that the leakage current between the metal foil substrate 5 and the organic TFT was suppressed to 10 ⁻¹² A or less.

≪2. Second Embodiment >>
FIG. 5 is a cross-sectional process diagram for explaining a characteristic part of the method of manufacturing a semiconductor device according to the second embodiment. The manufacturing method of the second embodiment will be described below based on this figure. In addition, the same code | symbol is attached | subjected and demonstrated to the component same as 1st Embodiment.

  First, as shown in FIG. 5A, a substrate 21 for forming the sheet-like resin 1 is prepared. The substrate 21 is not particularly limited in material and thickness as long as the substrate 21 has a flat surface such as a plastic substrate, a glass substrate, a metal substrate, or a semiconductor substrate.

  The sheet-like resin 1 is formed on the prepared substrate 31 by coating. The sheet-like resin 1 to be formed here may be the same material as the sheet-like resin 1 described in the first embodiment, and after the film formation, a step of removing the coating solvent used for the resin material is performed. .

  Next, as shown in FIG. 5 (2), the metal foil substrate 5 is bonded to the sheet-like resin 1 on the substrate 31. At this time, if necessary, bonding is performed by pressure bonding using a bonding machine such as a vacuum laminator. The metal foil substrate 5 preferably has a good surface flatness and bends flexibly. Examples of such a metal foil substrate 5 include a metal foil made of stainless steel.

  Next, as shown in FIG. 5 (3), the sheet 31 is removed leaving the sheet-like resin 1 on the metal foil substrate 5 side, and the sheet-like resin 1 is transferred onto the metal foil substrate 5. When removing the substrate 31, processing for weakening the adhesion between the substrate 31 and the sheet-like resin 1 is performed as necessary. As such a process, for example, the sheet-shaped resin 1 on the substrate 31-side interface is irradiated with light from the substrate 31 side, and the sheet-shaped resin 1 is cured to weaken the adhesion, and then the substrate 31 is removed. In this case, the substrate 31 is a substrate having optical transparency.

  Thereafter, as shown in FIG. 5 (4), the sheet-like resin 1 is cured. As the curing treatment at this time, it is selected to perform ultraviolet irradiation, heat treatment, or both depending on the resin material constituting the sheet-like resin 1.

  As described above, the flexible support substrate 7 formed by covering the metal foil substrate 5 with the cured insulating sheet-like resin 1 is formed. Formation of the semiconductor element on the support substrate 7 obtained in this manner can be performed in the same manner as described with reference to FIG. 2 in the first embodiment.

  In the second embodiment described above, the support substrate 7 on which the organic TFTs 19 are arranged is formed by bonding the sheet-like resin 1 formed on the substrate 31 different from the metal foil substrate 5 onto the metal foil substrate 5. It is a procedure to form. For this reason, as in the first embodiment, a procedure for forming the support substrate 7 on which the organic TFTs 19 are arranged by pasting the sheet-like resin 1 previously formed into a sheet shape onto the metal foil substrate 5; Become. For this reason, as in the first embodiment, it is not necessary to perform the step of forming an insulating film on the metal foil substrate 5 in the production of the support substrate 7, and in the process of mass production of semiconductor devices using a large substrate. Moreover, it becomes possible to use metal foil as a board | substrate.

  Note that the method for forming the sheet-like resin 1 on the substrate 31 different from the metal foil substrate 5 is not limited to the coating formation described with reference to FIG. Other film forming methods such as the method may be applied. However, film formation methods such as vapor deposition and sputtering are methods that require film formation time. For this reason, by forming a film on the substrate 31 in advance prior to the bonding onto the metal foil substrate 5, the time required for the formation of the support substrate 7 and the subsequent formation process of the semiconductor element (organic TFT 19) is reduced. It is possible.

≪3. Third Embodiment >>
FIG. 6 is a cross-sectional process diagram for explaining a characteristic part of the semiconductor device manufacturing method according to the third embodiment. The manufacturing method of the third embodiment shown in this figure is different from the first and second embodiments described above in that an adhesive layer 33 is provided on the metal foil substrate 5.

  First, as shown in FIG. 6A, an adhesive layer 33 is formed on the metal foil substrate 5 before the sheet-like resin 1 is bonded. The adhesive layer 33 is not particularly limited in material and need not be excellent in insulation. For this reason, the adhesive layer 33 may be formed, for example, by applying a resin material having adhesive strength by coating.

  Thereafter, for example, as shown in FIG. 6B, the sheet-like resin 1 is bonded onto the metal foil substrate 5 via the adhesive layer 33. At this time, similarly to the first embodiment, the sheet-like resin 1 on the separator 3b may be attached, or the sheet-like resin 1 formed on the substrate may be attached similarly to the second embodiment. .

  Next, as shown in FIG. 6 (3), the separator 3 b (or the substrate or the like) is peeled off from the sheet-like resin 1 bonded to the metal foil substrate 5 to expose one surface of the sheet-like resin 1. This exposed surface becomes a process surface.

  Next, as shown in FIG. 6 (4), a step of curing the sheet-like resin 1 is performed. Under the present circumstances, you may perform the process of hardening the adhesive bond layer 33 with the sheet-like resin 1 as needed. As the curing process at this time, it is selected to perform ultraviolet irradiation, heat treatment, or both depending on the resin material constituting the sheet-like resin 1 and the adhesive layer 33.

  As described above, the flexible support substrate 7 a is formed by providing the insulating sheet-like resin 1 on the metal foil substrate 5 via the adhesive layer 33. The formation of the semiconductor element on the support substrate 7a thus obtained can be performed in the same manner as described with reference to FIG. 2 in the first embodiment.

  In the third embodiment described above, the support substrate on which the organic TFTs 19 are arrayed is formed by bonding the sheet-like resin 1 previously formed into a sheet shape onto the metal foil substrate 5 via the adhesive layer 33. 7 is a procedure for forming 7. For this reason, similarly to the first embodiment, when the support substrate 7a is manufactured, it is not necessary to perform the step of forming an insulating film on the metal foil substrate 5, and the support substrate 7a can be formed in a short time without depending on the area. It is possible to produce. In particular, in the third embodiment, since the adhesive layer 33 is provided between the metal foil substrate 5 and the sheet-like resin 1, regardless of the material of the metal foil substrate 5 and the sheet-like resin 1, Adhesion between them can be ensured. Moreover, the adhesive layer 33 may be formed by a coating method with a short process time, since the material such as insulation is not particularly limited. Therefore, the hardening of the first embodiment is not impaired.

  In the third embodiment, the adhesive property between the metal foil substrate 5 and the sheet-like resin 1 is ensured by the adhesive layer 33. For this reason, the adhesiveness is not required for the sheet-like resin 1 before being bonded to the metal foil substrate 5. Therefore, the sheet-like resin 1 may be cured before being bonded to the metal foil substrate 5.

<< 4. Fourth Embodiment >>
FIG. 7 is a cross-sectional process diagram for explaining a characteristic part of the method of manufacturing a semiconductor device according to the fourth embodiment. The manufacturing method of the fourth embodiment shown in this figure differs from the first to third embodiments described above in that a sheet-like resin on the surface of the metal foil substrate is obtained by performing a modification treatment on the surface of the metal foil substrate. The process of improving the adhesiveness of the film is to be performed.

  First, as shown in FIG. 7 (1), the surface of the metal foil substrate 5 is subjected to a modification treatment to improve the adhesion with the sheet-like resin on the surface of the metal foil substrate 5. The property improving layer 35 is formed. As the modification treatment here, for example, treatment with a surface modification material such as UV ozone treatment, plasma treatment, or silane coupling material is performed. Thus, the adhesion improving layer 35 is formed by hydrophilizing and hydrophobizing the surface layer of the metal foil substrate 5 or changing the surface flatness.

  Thereafter, it may be performed in the same manner as in the other embodiments. For example, as shown in FIG. 7 (2), the sheet-like resin 1 is bonded onto the metal foil substrate 5 via the adhesion improving layer 35. At this time, similarly to the first embodiment, the sheet-like resin 1 on the separator 3b may be attached, or the sheet-like resin 1 formed on the substrate may be attached similarly to the second embodiment. .

  Next, as shown in FIG. 7 (3), the separator 3 b (or the substrate or the like) is peeled off from the sheet-like resin 1 bonded to the metal foil substrate 5 to expose one surface of the sheet-like resin 1. This exposed surface becomes a process surface.

  Next, as shown in FIG. 7 (4), a step of curing the sheet-like resin 1 is performed.

  As described above, the flexible support substrate 7b is formed by covering the metal foil substrate 5 provided with the adhesion modifying layer 35 with the insulating sheet-like resin 1. Formation of the semiconductor element on the support substrate 7b thus obtained can be performed in the same manner as described with reference to FIG. 2 in the first embodiment.

  Even in the fourth embodiment described above, a procedure for forming the support substrate 7b on which the organic TFTs 19 are arrayed by pasting the sheet-like resin 1 formed in a sheet shape on the metal foil substrate 5 in advance. It is. For this reason, similarly to the first embodiment, when the support substrate 7b is manufactured, it is not necessary to perform a process of forming an insulating film on the metal foil substrate 5, and the support substrate 7b can be formed in a short time without depending on the area. It is possible to produce. In particular, in the fourth embodiment, since the adhesion improving layer 35 is provided between the metal foil substrate 5 and the sheet-like resin 1, it is not dependent on the material of the metal foil substrate 5 and the sheet-like resin 1. The adhesion between them can be ensured.

  In the fourth embodiment, the adhesion between the metal foil substrate 5 and the sheet-like resin 1 is ensured by the adhesion improving layer 35. For this reason, the adhesiveness is not required for the sheet-like resin 1 before being bonded to the metal foil substrate 5. Therefore, as in the third embodiment, the sheet-like resin 1 may be cured before being bonded to the metal foil substrate 5.

≪5. Fifth embodiment >>
FIG. 8 is a cross-sectional process diagram for explaining a characteristic part of the semiconductor device manufacturing method according to the fifth embodiment. The manufacturing method of the fifth embodiment shown in this figure differs from the first to fourth embodiments described above in that the sheet-like resin on the surface of the metal foil substrate is formed by performing a film forming process on the metal foil substrate. There is a process for improving the adhesion.

  First, as shown in FIG. 8 (1), adhesion is performed on the surface of the metal foil substrate 5 to improve the adhesion to the sheet-like resin by performing a film forming process on the surface of the metal foil substrate 5. Layer 37 is formed. The material of the adhesion layer 37 is not limited as long as the adhesion between the metal foil substrate 5 and the sheet-like resin is improved, and a metal film made of a material different from that of the metal foil substrate 5 is used. Alternatively, another inorganic material film or an organic film is formed. For example, here, as a film forming process, vapor deposition of metal / metal oxide film by sputtering or electron beam, film formation of inorganic film or organic polymer film by CVD method, film formation of monomolecular organic film by application of surface treatment agent, By forming an organic polymer film by applying a polymer solution, an adhesion layer 37 made of these is formed on the metal foil substrate 5.

  Thereafter, it may be performed in the same manner as in the other embodiments. For example, as shown in FIG. 8 (2), the sheet-like resin 1 is bonded onto the metal foil substrate 5 via the adhesion layer 37. At this time, similarly to the first embodiment, the sheet-like resin 1 on the separator 3b may be attached, or the sheet-like resin 1 formed on the substrate may be attached similarly to the second embodiment. .

  Next, as shown in FIG. 8 (3), the separator 3 b (or the substrate or the like) is peeled off from the sheet-like resin 1 bonded to the metal foil substrate 5 to expose one surface of the sheet-like resin 1.

  Next, as shown in FIG. 8 (4), a step of curing the sheet-like resin 1 is performed.

  As described above, the flexible support substrate 7 c is formed by covering the metal foil substrate 5 provided with the adhesion layer 37 with the insulating sheet-like resin 1. Formation of the semiconductor element on the support substrate 7c thus obtained can be performed in the same manner as described with reference to FIG. 2 in the first embodiment.

  Even in the fifth embodiment described above, a procedure for forming the support substrate 7c on which the organic TFTs 19 are arranged by pasting the sheet-shaped resin 1 formed in a sheet shape on the metal foil substrate 5 in advance. It is. For this reason, similarly to the first embodiment, when the support substrate 7c is manufactured, it is not necessary to perform the step of forming an insulating film on the metal foil substrate 5, and the support substrate 7c can be formed in a short time without depending on the area. It is possible to produce. In particular, in the fifth embodiment, since the adhesion layer 37 is provided between the metal foil substrate 5 and the sheet-like resin 1, these materials are used regardless of the material of the metal foil substrate 5 and the sheet-like resin 1. The adhesion between the two can be ensured.

  In the fifth embodiment, the adhesion between the metal foil substrate 5 and the sheet-like resin 1 is ensured by the adhesion layer 37. For this reason, the adhesiveness is not required for the sheet-like resin 1 before being bonded to the metal foil substrate 5. Therefore, as in the third embodiment and the second embodiment, the sheet-like resin 1 may be cured before being bonded to the metal foil substrate 5.

  Note that the semiconductor device formed by the procedure described above can be favorably used as, for example, a backplane (back substrate) including elements that form pixel circuits and peripheral circuits in a display device. The display device can be applied to, for example, an organic electroluminescent element, a liquid crystal display device, and an electrophoretic display device. In addition to the display device, it can be mounted on various electronic devices, and can be widely applied to electronic devices including the display device as described above. For example, it can be mounted on electronic paper, digital cameras, notebook personal computers, portable terminal devices such as mobile phones, and electronic devices such as video cameras.

  DESCRIPTION OF SYMBOLS 1 ... Sheet-like resin, 5 ... Metal foil board | substrate, 15 ... Organic-semiconductor layer, 19 ... Organic TFT (semiconductor element), 21 ... Semiconductor device, 33 ... Adhesive layer, 35 ... Adhesion improvement layer, 37 ... Adhesion layer

Claims (8)

Bonding an insulating sheet-shaped resin on a metal foil substrate;
Forming a semiconductor element on the sheet-like resin. The method for manufacturing a semiconductor device according to claim 1, wherein a step of curing the sheet-shaped resin is performed after the sheet-shaped resin is bonded and before the semiconductor element is formed. The method for manufacturing a semiconductor device according to claim 1, wherein an adhesive layer is provided on a surface of the metal foil substrate, and the sheet-like resin is bonded to the metal foil substrate via the adhesive layer. The method for manufacturing a semiconductor device according to claim 3, wherein a step of curing the adhesive layer is performed after the sheet-like resin is bonded and before the semiconductor element is formed. The semiconductor according to claim 1, wherein the adhesion of the sheet-shaped resin on the surface of the metal foil substrate is improved by performing a modification treatment on the surface of the metal foil substrate before the sheet-shaped resin is bonded. Device manufacturing method. The semiconductor device according to claim 1, wherein adhesion of the sheet-shaped resin on the surface of the metal foil substrate is improved by performing a film forming process on the metal foil substrate before the sheet-shaped resin is bonded. Manufacturing method. The method for manufacturing a semiconductor device according to claim 1, wherein in the step of forming the semiconductor element, a semiconductor element using an organic semiconductor layer is formed on the sheet-like resin. The method for manufacturing a semiconductor device according to claim 1, wherein stainless steel is used as the metal foil substrate.

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