JP2010251202A - Self-light-emitting display device and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a self-light-emitting display device using a light emitting element hard to be influenced by moisture and gas components such as oxygen. <P>SOLUTION: In this self-light-emitting device, a display region is structured by arranging light emitting elements, which are respectively formed with a first electrode 6, an organic light emitting layer 9 and a second electrode 10 in this order on an insulating substrate 1, in two dimensions on the insulating substrate 1. The first electrode 6 is a reflecting electrode having at least a reflecting layer, and at least a part of a side wall surface of the reflecting electrode is formed as an insulator 6'. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a self-luminous display device and a manufacturing method thereof, and particularly to a self-luminous display device suitably used for an organic EL (Electro Luminescence) display device and a manufacturing method thereof.

  As one of the causes of accelerating deterioration of a light emitting element, invasion of gas components such as moisture and oxygen is known. In particular, in an organic EL element, a portion where a gas component such as moisture or oxygen enters the organic light emitting layer is in a non-light emitting state, resulting in a decrease in luminance, a decrease in light emission efficiency, and a non-light emitting pixel.

  In the light emitting element, in order to prevent moisture, oxygen and other gas components from the surrounding environment, the light emitting element is encapsulated / sealed with a material or structure having low gas permeability. The intrusion of gas components such as oxygen can be kept extremely small. However, when a resin material is used for an element constituting the light emitting element, a gas component such as moisture or oxygen contained in the resin material becomes a problem. That is, when a gas component such as moisture or oxygen is released from the resin material inside the sealed light emitting element, the light emitting element deteriorates.

  In particular, in the conventional organic EL element, as shown in FIG. 7, when the separation film 8 is formed between the pixels, the separation film 8 and the organic light emitting layer 9 are in direct contact. For this reason, when there are many gas components, such as a water | moisture content and oxygen, in the separation membrane 8, it will cause the deterioration of an organic EL element to advance greatly. FIG. 7 is a schematic cross-sectional view showing a pixel configuration of a conventional self-luminous display device, and parts having the same functions as those of the embodiment of the present invention are denoted by the same reference numerals.

  In the organic electroluminescent device composed of the light emitting element disclosed in Patent Document 1, an organic light emitting layer is formed after dehydration and degassing treatment with a substrate heating and reduced pressure atmosphere on an insulating layer serving as an interpixel separation film. is doing. That is, by removing part of the gas components such as moisture and oxygen retained in the insulating layer from the insulating layer by substrate heating and reduced pressure atmosphere, the gas components such as moisture and oxygen entering the organic light emitting layer are minimized. It is said that the deterioration of the light emitting element is suppressed.

  However, moisture and gas components contained in the insulating layer that can be removed under substrate heating and reduced pressure atmosphere are limited. In other words, moisture and gas components that are strongly adsorbed inside the insulating layer cannot be removed only by substrate heating and a reduced-pressure atmosphere, and although it is effective in suppressing element deterioration, moisture contained in the insulating layer In addition, element deterioration due to gas components cannot be excluded. In addition, in the resin material, material decomposition occurs due to heat and light from the environment added to the light emitting element, and accordingly, moisture and gas components are newly generated. When newly generated moisture and gas components enter the light emitting element, the light emitting element is deteriorated, and not only luminance and light emission efficiency are lowered, but also non-light emitting pixels are generated.

Japanese Patent No. 3531597

  As described above, when gas components such as moisture and oxygen released from the inter-pixel separation film of the light emitting element enter the light emitting element, deterioration of the light emitting element is accelerated. Then, a portion where a gas component such as moisture or oxygen enters is in a non-light emitting state, and not only a decrease in luminance and light emission efficiency but also a non-light emitting pixel is generated.

  The present invention has been made to solve the above-described problems, and an object thereof is to provide a self-luminous display device using a light-emitting element that is not easily affected by gas components such as moisture and oxygen.

  The self-luminous display device of the present invention has the following features in order to solve the above-described problems. That is, in the self-luminous display device of the present invention, a light emitting element in which a first electrode, an organic light emitting layer, and a second electrode are formed in this order on a substrate is two-dimensionally arranged on the substrate, It is a self-luminous display device that constitutes a display area. The first electrode is a reflective electrode having at least a reflective layer, and at least a part of the side wall surface of the reflective electrode is an insulator.

  According to the self-luminous display device of the present invention, since no separation film between pixels is required, deterioration of the light emitting element due to diffusion of gas components such as moisture and oxygen contained in the separation film can be eliminated. In addition, since there is no moisture or gas component newly generated inside the separation membrane due to environmental load, a light-emitting element with excellent environmental resistance can be obtained.

  Furthermore, since the process for forming the separation membrane can be omitted, the manufacturing cost can be reduced. Further, since a space for forming the separation film is not necessary, the light emission area per pixel can be increased, the pixel aperture ratio can be improved, and the life of the light emitting element can be improved.

It is a schematic sectional drawing which shows the pixel structure of the self-luminous display apparatus which concerns on Example 1 of this invention. It is a perspective view which shows an example of the self-luminous display apparatus whole image which concerns on Example 1 of this invention. It is a top view which shows an example of the pixel layout of the self-luminous display apparatus which concerns on Example 1 of this invention. In the self-light-emitting display device according to Example 1 of the present invention, it is a schematic cross-sectional view showing an example of a method for forming the insulator. It is a schematic sectional drawing which shows the pixel structure of the self-light-emitting display apparatus which concerns on Example 2 of this invention. FIG. 10 is a schematic cross-sectional view showing an example of a method for forming the insulator in the self-luminous display device according to Example 2 of the present invention. It is a schematic sectional drawing which shows the pixel structure of the conventional self-light-emitting display apparatus.

  Embodiments of a self-luminous display device according to the present invention will be described below.

  The self light emitting display device according to the embodiment of the present invention uses a light emitting element in which a first electrode, an organic light emitting layer, and a second electrode are formed in this order on a substrate. Then, the display area is configured by two-dimensionally arranging the light emitting elements on the substrate.

  The self-luminous device according to the embodiment of the present invention is characterized in that the first electrode is a reflective electrode having at least a reflective layer, and at least a part of the side wall surface of the reflective electrode is an insulator. is there. The first electrode includes a reflective layer and a conductive layer formed on the reflective layer, and the surface of the reflective layer that is not covered with the conductive layer can be an insulator. Here, the insulator can be formed of a metal oxide. The absolute reflectance of this insulator is preferably 20% or less at all wavelengths of 350 to 800 nm. The insulator can be formed of an anodic oxide film. Further, the insulator can be formed by an anodic oxidation method.

[Example 1]
With reference to the drawings, specific examples of the self-luminous display device according to the present invention will be described.

  In the following description, well-known or well-known techniques in the technical field are applied to portions that are not particularly illustrated or described. Further, the embodiments described below are some embodiments of the invention, and the present invention is not limited to these embodiments.

  FIG. 1 is a schematic cross-sectional view showing a pixel configuration of a self-luminous display device according to Example 1 of the present invention, and schematically shows a cross-sectional structure of the pixel. FIG. 2 is a perspective view showing an example of the entire self-luminous display device according to the first embodiment of the present invention. FIG. 3 is an example of a pixel layout of the self-luminous display device according to the first embodiment of the present invention. FIG. FIG. 4 is a schematic cross-sectional view showing an example of a method for forming the insulator in the self-luminous display device according to Example 1 of the present invention. Note that the cross-sectional structure shown in FIG. 1 corresponds to the cross-sectional structure taken along line A-A ′ in FIG. 3. In each figure, parts having the same function are denoted by the same reference numerals.

  In the self-luminous device of Example 1, the display area 15 shown in FIG. 2 is configured by pixels having the cross-sectional structure shown in FIG. As shown in FIG. 2, connection terminals 14 are provided on the side of the display area 15. As shown in FIG. 1, a first electrode 6, an organic light emitting layer 9, an insulating substrate 1 on which a first insulating layer 2, a thin film transistor 3, a second insulating layer 4, and a planarizing layer 5 are formed. A second electrode 10, a sealing film 11, and a protective film 12 are formed.

  The first electrode 6 is composed of a pattern electrode corresponding to each pixel, and is connected to the thin film transistor 3 controlled for each pixel through a contact hole 13. That is, the first electrode 6 is connected to the thin film transistor 3 for each light emitting element. The light emission control of each pixel is performed by controlling the voltage applied between the first electrode 6 and the second electrode 10.

  As shown in FIGS. 1 and 3, an insulator 6 ′ is formed on the pattern end surface and the side wall surface of the first electrode 6. An insulator 6 ′ is also formed on the surface of the first electrode 6 just above the contact hole 13.

  In the configuration of the first electrode 6 in Example 1, since electrons or holes are injected into the organic light emitting layer 9 in a region where the insulator 6 ′ is not formed, light emission of each pixel is performed by the region where the insulator 6 ′ is formed. The area is determined.

  The first electrode 6 is a highly reflective material and is made of a conductive material. An insulator 6 ′ is formed on the surface of the first electrode 6 immediately above the contact hole 13, but other than the surface is connected with a conductive material, and electrical connection with the thin film transistor 3 can be made through the contact hole 13. Maintained.

  The method of forming the insulator 6 ′ is not limited as long as the insulating property can be ensured. For example, an anodic oxide film that is a metal oxide can be used. In addition, since the formation region of the insulator 6 'is a non-light-emitting region, it is preferable that the reflectance is low in order to avoid external light reflection. Specifically, the absolute reflectance is preferably 20% or less at all wavelengths of 350 to 800 nm.

  In Example 1, it is not necessary to provide the separation film 8 formed by the conventional self-luminous display device shown in FIG. Therefore, deterioration of the light emitting element due to gas components such as moisture and oxygen derived from the separation membrane 8 is eliminated.

  The separation film 8 in the conventional self-luminous display device has the purpose of protecting the end portion of the first electrode 6. While the thickness of the first electrode 6 is 50 nm to 300 nm, the thickness of the organic light emitting layer 9 is also 50 nm to 300 nm, both of which are comparable. If the separation film 8 is not formed in the conventional self-luminous display device, the organic light emitting layer 9 formed on the first electrode 6 cannot sufficiently cover the end of the first electrode 6. For this reason, the second electrode 10 and the first electrode 6 to be formed next are short-circuited, and a voltage cannot be applied between the first electrode 6 and the second electrode 10. In particular, when the organic light emitting layer 9 is formed with high rectilinearity, for example, by heating vapor deposition or transfer, and the second electrode 10 is formed by sputtering with a large wraparound, the short-circuit at the end of the first electrode 6 is further reduced. It becomes a problem.

  In the configuration of the present invention, an insulator 6 ′ is formed on the end surface and the side wall surface of the first electrode 6. For this reason, even if there is a place where the insulator 6 ′ and the second electrode 10 are in contact with each other, the first electrode 6 and the second electrode 10 do not short-circuit, and light is emitted by applying a voltage between the electrodes. Can be made.

  In the configuration of the first embodiment, one pixel can emit light in a single color, and RGB can be displayed as one pixel by controlling light emission of RGB with three pixels.

  According to the configuration of the first embodiment described above, since it is not necessary to form the separation film 8 in the conventional self-luminous display device, a gas such as moisture or oxygen generated when the separation film 8 contains or decomposes. The influence of ingredients can be eliminated. For this reason, deterioration of the light emitting element can be suppressed.

  Hereinafter, Example 1 will be described in more detail.

  In Example 1, the first electrode 6 is made of a highly reflective conductive material and is a reflective electrode having a reflective layer. For example, the first electrode 6 is preferably formed from a film in which a metal such as Cr, Al, Ag, Au, or Pt is formed to a thickness of about 50 to 300 nm. This is because the higher the reflectance, the higher the light extraction efficiency. Further, these metal films have high conductivity and are excellent as electrode materials. In particular, Cr, Al, Ag, Ta, or an alloy containing at least one of them is a material that can be anodized, and is more preferable.

  The second electrode 10 is a conductive material having a high transmittance and serves as a light extraction electrode. Light emitted from each pixel is extracted through the second electrode 10. That is, the self-luminous device (organic EL display device) of Example 1 is a top emission type.

  As the electrode material of the second electrode 10, a material having a high transmittance is preferable. For example, the second electrode 10 may be a transparent conductive film such as ITO, IZO, or ZnO, or may be a semi-transmissive film in which a metal such as Ag, Au, or Al is formed with a thickness of about 10 nm to 30 nm.

  The first electrode 6 and the insulator 6 'are formed as shown in FIG. FIG. 4 is a schematic cross-sectional view illustrating an example of a method for forming an insulator in a self-luminous display device.

  A photosensitive resist is applied on the patterned first electrode 6, and a resist pattern 16 is formed by exposure and development so that the end portion of the first electrode 6 and the contact hole 13 are exposed (FIG. 4A). ). Subsequently, the exposed first electrode 6 is oxidized using the anodic oxidation method on the surface and side wall surface of the first electrode 6 that is not covered with the resist pattern, and an anodic oxide film that becomes the insulator 6 ′ is formed. It forms (FIG.4 (b)). The resist pattern 16 is removed with a stripping solution to form the first electrode 6 and the insulator 6 'of Example 1 (FIG. 4C).

  In the step of removing the resist pattern 16, if the peeling is not successful due to resist alteration, the resist pattern 16 may be peeled after removing the altered layer on the resist surface by dry etching, ashing, or the like.

  The anodic oxidation method is not particularly limited as long as the surface of the material of the first electrode 6 can be sufficiently oxidized to form the insulator 6 ′, and is a known process used in manufacturing a gate insulating film of a thin film transistor substrate of a liquid crystal display. It can be carried out. However, when the anodic oxidation is performed, if a current is directly supplied to the formed metal film, the first electrode 6 is in an island shape, so that a uniform insulator 6 'cannot be obtained. Therefore, it is necessary to conduct to all terminals formed on the substrate such as an anode line, a signal line, and a gate line forming the thin film transistor 3 and to pass a current through the metal film through the transistor and the through hole.

  Further, as the anodic oxide film to be the insulator 6 ′, a chromium oxide film or black alumite may be used. In this case, the absolute reflectance is preferably 20% or less at all wavelengths of 350 to 800 nm. . By making the insulator 6 ′ have a low reflectance, it is possible to obtain a self-luminous display device having excellent display characteristics while suppressing a decrease in contrast due to reflection of external light.

  Specifically, an anodic oxide film to be the insulator 6 'was formed by the following process.

An anode comprising a substrate on which an Al alloy pattern formed as the first electrode 6 is formed, and a solution prepared by diluting 3% tartaric acid with ammonia and adjusting the pH to 6.25 ± 0.05 to 1: 9 with an ethylene glycol solution. Immerse in an oxidizing solution. Then, the formation current density is adjusted to be 0.2 mA / cm ² (constant current formation). Next, anodic oxidation is performed until the formation voltage of 100 V necessary to obtain a predetermined Al ₂ O ₃ film thickness is reached. As a result, an anodized film insulator 6 ′ made of Al ₂ O ₃ is formed on the surface and side wall surface of the first electrode 6 not covered with the resist pattern 16. Thereafter, in order to obtain a uniform insulator 6 ′, it is preferable to hold for several tens of minutes (constant voltage formation). At this time, it is necessary to set conditions so that the conductive path through the contact hole 13 is not cut.

  Note that, when the anodic oxidation is performed, if a current is directly supplied to the formed metal film, the first electrode 6 has an island shape, and thus a uniform insulator 6 ′ cannot be obtained. Therefore, it is necessary to conduct to all terminals formed on the substrate such as the anode line, the signal line, and the gate line, and to pass a current through the metal film through the transistor and the through hole.

When the formation current density is 0.2 mA / cm ₂ and the pixel size of the organic EL element array is 50 μm × 150 μm, the current flowing per pixel is 15 nA. In general, the current that can flow between the source and drain of the thin film transistor 3 of one pixel is 0.1 mA. During the anodic oxidation, a voltage is applied to the anodic oxide film, which is an insulator, a high voltage is not applied to the thin film transistor 3, and the thin film transistor 3 is not destroyed.

By the above method, for example, when the material of the first electrode 6 is Al, an inorganic insulating film of Al ₂ O _{3 is applied to} the upper surface and the side wall surface of the pattern end of the first electrode 6 and the contact hole 13 ( Anodized film) is formed, and the surface and the side wall surface of the first electrode 6 are insulated. Therefore, even if the second electrode 10 may come into contact with the second electrode 10 at the pattern end of the first electrode 6, the first electrode 6 and the second electrode 10 will not be short-circuited.

  In addition, since the contact hole 13 has a concave structure, the electric field distribution changes and overlaps with the film thickness distribution of the organic light emitting layer 9, which may cause uneven emission luminance. By forming the body 6 ′, non-uniform light emission can be prevented.

  The organic light emitting layer 9 is formed as follows.

  The organic light emitting layer 9 can use at least one selected from an organic light emitting material, a hole injection material, an electron injection material, a hole transport material, and an electron transport material. The range of color selection can be expanded by doping the hole injection material or the hole transport material with an organic light emitting material, or doping the electron injection material or the electron transport material with an organic light emitting material. Furthermore, the organic light emitting layer 9 is preferably an amorphous film from the viewpoint of light emission efficiency.

  As the organic light-emitting material of each color, a triarylamine derivative, a stilbene derivative, a polyarylene, an aromatic condensed polycyclic compound, an aromatic heterocyclic compound, an aromatic heterocyclic condensed ring compound, a metal complex compound, or the like can be used. Moreover, these single oligo bodies or composite oligo bodies can be used. However, the configuration of the present invention is not limited to the exemplified materials.

  The organic light emitting layer 9 may be a layer having a single function of hole injection, hole transport, electron injection, or electron transport, or a layer having a composite function. The film thickness of the organic light emitting layer 9 is preferably about 50 nm to 300 nm, and preferably about 50 nm to 150 nm.

  As the hole injection and transport material, phthalocyanine compounds, triarylamine compounds, conductive polymers, perylene compounds, Eu complexes, and the like can be used, but the structure of the present invention is not limited.

  As an example of the electron injection and transport material, Alq3 in which a trimer of 8-hydroxyquinoline is coordinated to aluminum, an azomethine zinc complex, a distyrylbiphenyl derivative system, or the like can be used.

  Next, a transparent electrode is formed and the second electrode 10 is formed.

  In the configuration of the first embodiment, the insulator 6 ′ is formed on the end surface and the side wall surface of the first electrode 6. Even if there is a place where the insulator 6 'and the second electrode 10 are in contact with each other, the first electrode 6 and the second electrode 10 are not short-circuited, and a voltage is applied between the electrodes to emit light. Can do.

  As described above, since the self-luminous display device of Example 1 does not require a separation film between pixels, the deterioration of the light emitting element due to diffusion of gas components such as moisture and oxygen contained in the separation film is eliminated. can do. In addition, since there are no moisture or gas components newly generated inside the separation membrane due to environmental load, a light-emitting element with excellent environmental resistance can be obtained.

  Furthermore, since the process for forming the separation film can be omitted, the manufacturing cost can be reduced, and a space for forming the separation film is not required, so that the emission area per pixel can be increased. The pixel aperture ratio is improved, and the lifetime of the light emitting element can be improved.

[Example 2]
Next, with reference to FIG.5 and FIG.6, the self-light-emitting display apparatus which concerns on Example 2 of this invention is demonstrated. FIG. 5 is a schematic cross-sectional view showing a pixel configuration of a self-luminous display device according to Embodiment 2 of the present invention, and schematically shows a cross-sectional structure of the pixel. FIG. 6 is a schematic cross-sectional view showing an example of a method for forming the insulator in the self-luminous display device according to Example 2 of the present invention.

  In Example 2, the pattern of the conductive film 7 is formed on the first electrode 6. An insulator 6 'is formed on the surface and side wall surface of the first electrode 6 where the conductive film 7 is not formed. The conductive film 7 is electrically connected to the first electrode 6, and is electrically connected to the thin film transistor 3 through the first electrode 6 and the contact hole 13. The light emitting area is defined by the conductive film 7.

  As a material of the conductive film 7, a material having a high electron or hole injection property is preferable. For example, a transparent conductive film such as ITO, IZO, or ZnO can be used. These conductive films 7 are formed with a thickness of 10 nm to 30 nm by sputtering, vapor deposition, or the like.

  The first electrode 6, the insulator 6 ', and the conductive film 7 shown in FIG. 5 are formed as shown in FIG.

  A conductive film 7 is formed on the patterned first electrode 6 so as to cover the first electrode 6. Subsequently, a photosensitive resist is applied, and a resist pattern 16 is formed by exposing and developing so that the end portion of the first electrode 6 and the contact hole 13 are exposed (FIG. 6A). The conductive film 7 is removed by etching to form a pattern (FIG. 6B), and the surface of the first electrode 6 that is not covered with the resist pattern using the anodic oxidation method with respect to the exposed first electrode 6. Then, the side wall surface is oxidized to form an anodic oxide film that becomes the insulator 6 '(FIG. 6C). Subsequently, the resist pattern 16 is removed with a stripping solution to form the first electrode 6 and the insulator 6 'of Example 2 (FIG. 6D).

  For etching the conductive film 7, wet etching, dry etching, or the like can be used. When using wet etching, depending on the combination with the material of the first electrode 6, the pattern and reflectivity of the first electrode 6 may be lost due to the galvanic reaction, so the combination of materials and the etching conditions must be set. is required. Also, when performing dry etching, it is necessary to set conditions so that the pattern of the first electrode 6 is not lost.

  According to the method for forming the insulator 6 'and the conductive film 7 of the second embodiment, the insulator 6' can be formed using the resist pattern for patterning the conductive film 7 as it is. The pattern 7 is not shifted. For this reason, the surface and side wall surface of the first electrode 6 not covered with the conductive film 7 are covered with the insulator 6 ′.

  In the configuration of the second embodiment, the insulator 6 ′ is formed on the end surface and the side wall surface of the first electrode 6. For this reason, even if there is a place where the insulator 6 'and the second electrode are in contact with each other, the first electrode 6 and the second electrode 10 are not short-circuited, and a voltage is applied between the electrodes to emit light. be able to.

  The film thickness of the conductive film 7 is 10 nm to 30 nm, whereas the film thickness of the organic light emitting layer 9 is 50 nm to 300 nm. Thus, since the film thickness of the conductive film 7 can be formed to be about an order of magnitude thinner than the organic light emitting layer 9, the pattern end of the conductive film 7 is completely covered with the organic light emitting layer 9. Therefore, the conductive layer 7 and the second electrode 10 do not come into contact with each other to cause a short circuit.

  In the second embodiment, the other configurations have the same layout and pixel structure as in the first embodiment.

  As described above, since the self-luminous display device of Example 2 does not require a separation film between pixels, the deterioration of the light emitting element due to diffusion of gas components such as moisture and oxygen contained in the separation film is eliminated. can do. In addition, since there are no moisture or gas components newly generated inside the separation membrane due to environmental load, a light-emitting element with excellent environmental resistance can be obtained.

  Furthermore, since the process for forming the separation film can be omitted, the manufacturing cost can be reduced, and the space for forming the separation film is not required, so that the emission area per pixel can be increased. The pixel aperture ratio is improved, and the lifetime of the light emitting element can be improved.

DESCRIPTION OF SYMBOLS 1 Insulating substrate 2 1st insulating layer 3 Thin-film transistor (TFT)
4 Second insulating layer 5 Planarizing layer 6 First electrode 6 ′ Insulator 7 Conductive film 8 Separating film 9 Organic light emitting layer 10 Second electrode 11 Sealing film 12 Protective film 13 Contact hole 14 Connection terminal 15 Display area 16 Resist pattern

Claims (7)

A self-luminous display device that forms a display region by two-dimensionally arranging light-emitting elements in which a first electrode, an organic light-emitting layer, and a second electrode are formed in this order on a substrate. There,
The self-luminous display device, wherein the first electrode is a reflective electrode having at least a reflective layer, and at least a part of a side wall surface of the reflective electrode is an insulator.   2. The first electrode according to claim 1, wherein the first electrode includes a reflective layer and a conductive layer formed on the reflective layer, and a surface of the reflective layer that is not covered with the conductive layer is an insulator. Self-luminous display device.   The self-luminous display device according to claim 1, wherein the insulator is a metal oxide.   The self-luminous display device according to any one of claims 1 to 3, wherein an absolute reflectance of the insulator is 20% or less at all wavelengths of 350 to 800 nm.   The self-luminous display device according to claim 1, wherein the insulator is an anodic oxide film. A self-luminous display device that forms a display region by two-dimensionally arranging light emitting elements in which a first electrode, an organic light emitting layer, and a second electrode are formed in this order on a substrate. A manufacturing method comprising:
The method of manufacturing a self-luminous display device, wherein the first electrode is formed as a reflective electrode having at least a reflective layer, and at least a part of a side wall surface of the reflective electrode is formed as an insulator.   The method of manufacturing a self-luminous display device according to claim 6, wherein the insulator is formed by an anodic oxidation method.

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