JP2010245141A - Bonding structure and semiconductor element storing package - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a bonding structure which achieves highly reliable bonding of a metal member and a ceramic member and in which cracks do not occur in the ceramic member and to provide a highly reliable semiconductor element storing package having the bonding structure. <P>SOLUTION: The bonding structure is provided with: a first member 11 formed of a metal; a second member 12 which is made of ceramics and bonded to the first member 11 and has a metal layer 12a on a surface; a third member 13 formed of a metal arranged over the metal layer 12a of the second member 12 from the first member 11; a brazing material 14 disposed between the first member 11 and the metal layer 12a of the second member 12, and the third member 13; and fillets 15 and 16 formed of the brazing material 14 at a periphery of the third member 13. The third member 13 is provided with a chamfering part 17 serving as an accumulation part of the brazing material 14 only in a part confronting the second member 12 in the bonding structure. The semiconductor element storing package is provided with such a bonded structure. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a joining structure used when a ceramic member and a metal member are joined with a brazing material in a semiconductor element housing package, and a semiconductor element housing package using such a joint structure.

  In a semiconductor element housing package or the like, a ceramic member and a metal member are joined using a brazing material (see, for example, Patent Documents 1 and 2).

  FIG. 5 shows an example of a bonded structure using such a bonding technique. On a base member 1 made of metal, a member 3 made of ceramic having a recess 2 on the upper surface is fixed. A member 4 made of metal is disposed in the recess 2 and joined by a brazing material 5. In FIG. 5, reference numeral 6 indicates a metal layer (metallized layer) provided for brazing on the bottom surface of the recess 2 of the ceramic member 3.

  In such a joint structure, in order to improve the connection reliability of the brazing portion, generally, the fillet 7 of the brazing material 5 is formed from the outer surface of the base portion of the metal member 4 to the bottom surface of the concave portion 2 of the ceramic member 3. However, although the formation of the fillet 7 of the brazing material 5 is effective in relieving stress concentration at the base portion of the metal member 4, if the distance d between the metal member 4 and the side surface of the recess 2 of the ceramic member 3 is short, A large stress concentration occurs under the tip of the fillet 7, and a crack 8 may occur in the ceramic member 3.

  As a result of intensive studies on such problems, the present inventor has provided the chamfered portion 9 at the base of the metal member 4 as shown in FIG. Even when the distance d to the side surface is short, the inventors have found out that the occurrence of cracks can be suppressed without reducing the connection reliability (bonding strength), and filed earlier (Japanese Patent Application No. 2008-230751).

  However, for example, as shown in FIG. 7, a ceramic member 3 having a recess 2 on the upper surface is disposed on a base member 1 made of metal, and a metal member 4 is disposed across these members 1 and 3. In the case where the material 5 is joined together, if the chamfered portion 9 is formed, the residual stress below the tip of the fillet 7 increases, and a tendency that the crack 8 tends to occur is observed. As a cause of this, in order to realize a highly reliable joint between the metal member 4 and the ceramic member 3, that is, to form a homogeneous brazing material layer without voids between the metal member 4 and the ceramic member 3, Since the brazing material was used more than usual, the brazing material 9 was formed and the brazing material was easily collected, and the brazing material was also disposed between the metal base member 1 and the ceramic member 3. It is conceivable that the material has flowed into the chamfered portion 9 and, as a result, the amount of brazing material in the chamfered portion 9 has increased.

  Therefore, as a countermeasure, the amount of brazing material used may be reduced. However, if the amount of brazing material used is reduced, sufficient bonding strength may not be obtained.

JP-A-63-14454 JP-A-6-334057

  The present invention has been made in response to the above-described problems of the prior art, and even when an excessive amount of brazing material is used, it is possible to perform highly reliable joining between a metal member and a ceramic member. An object of the present invention is to provide a bonding structure that does not cause defects such as cracks in a ceramic member due to excessive brazing filler metal, and a highly reliable package for housing a semiconductor element provided with such a bonding structure. And

  (1) The invention (bonding structure) of claim 1 is a first member made of metal, a second member made of ceramic having a metal layer on the surface, which is joined to the first member, and A third member made of metal disposed over the metal layer of the second member from above the first member, the metal layer of the first member and the second member, and the third member A joining structure including a brazing material disposed between the first member and a fillet formed by the brazing material around the third member, wherein the third member is the first member; Only a portion facing the member is provided with a chamfered portion that serves as a reservoir for the brazing material.

  In the present invention, the third member made of metal includes a chamfered portion that serves as a brazing material reservoir only in a portion facing the first member made of metal. In such a bonded structure, even if a large amount of brazing material is used to increase the reliability of bonding, the excess brazing material has no risk of cracking due to stress during solidification shrinkage. It is easy to collect in the chamfered portion on the first member, and the amount of brazing material in the portion forming the fillet on the second member made of ceramic does not increase. Also, a brazing material is disposed between the first member made of metal and the second member made of ceramic, the brazing material flows, the third member made of metal, and the first member made of metal. Even if the amount of brazing material between the second member made of ceramic and the second member made of ceramic increases, the brazing material flows to the chamfered portion on the first member, so that the fillet on the second member made of ceramic The amount of brazing material in the part forming the slag does not increase. Therefore, the stress applied below the tip of the fillet on the second member made of ceramic does not increase, and the occurrence of defects such as cracks due to the increase of the stress can be prevented. For this reason, it is possible to obtain a high-quality bonded structure having high bonding reliability and no defects such as cracks.

  (2) According to a second aspect of the present invention, in the bonded structure according to the first aspect, the second member includes a convex portion that is close to the third member on the surface.

  In this invention, the 2nd member is provided with the convex part which adjoins the 3rd member on the surface. In such a bonded structure, the area of the metal layer for forming the fillet in the second member is limited by the convex portion, so that the stress applied below the tip of the fillet when the brazing material solidifies and contracts is convex. It becomes larger than those without a portion, and defects such as cracks are more likely to occur in the second member made of ceramic. In the present invention, since the brazing material is concentrated and collected in the chamfered portion on the first member, the stress applied below the tip of the fillet on the second member made of ceramic increases even in such a structure. In other words, the occurrence of defects such as cracks in the portion can be prevented.

  (3) The invention of claim 3 is the first member made of metal, the second member made of ceramic joined on the first member, and the second member on the first member. A third member made of a metal having a side surface facing the second member, disposed close to the member, and a brazing material disposed between the first member and the third member; A joined structure including a fillet formed of the brazing material around the third member, wherein the third member is a portion facing the first member, A chamfered portion that serves as a reservoir for the brazing material is provided in a portion other than the base portion on the side surface facing the two members.

  In the present invention, the third member made of metal is a portion facing the first member made of metal, and becomes a reservoir of brazing material in a portion excluding the base portion on the side surface facing the second member. A chamfer is provided. In such a bonded structure, even if a large amount of brazing material is used to increase the reliability of the bonding, the excess brazing material is made of ceramic, and therefore, a defect such as a crack is likely to occur. It collects not in the member side but in the chamfered portion on the opposite side. For this reason, when the brazing material solidifies and shrinks, the stress applied to the second member made of ceramic does not increase, and the occurrence of defects such as cracks due to the increase of the stress can be prevented. As a result, a high-quality bonded structure with high bonding reliability and no defects such as cracks can be obtained.

  (4) The invention according to claim 4 is the joined structure according to any one of claims 1 to 3, wherein the fillet on the second member or the second member side has a rising angle of 60 ° or less. It is characterized by having.

  In the present invention, the fillet on the second member 12 or on the second member 12 side has a rising angle of 60 ° or less. In such a joined structure, stress under the fillet tip accompanying solidification shrinkage of the brazing material can be more reliably reduced, so that the occurrence of defects such as cracks can be more reliably prevented.

  In the present specification, the “rise angle of the fillet” means a substantially triangular cross section (hereinafter, simply referred to as “fillet cross section”) when cut by a plane perpendicular to the surfaces of the two members in contact with the fillet. The angle of inclination of the straight line connecting the fillet tip and the fillet apex to the bottom of the fillet.

  (5) The invention according to claim 5 is the joined structure according to any one of claims 1 to 3, wherein the fillet on the second member 12 or on the second member 12 side is 45 ° or less. It has a rising angle.

  In the present invention, the fillet on the second member or on the second member side has a rising angle of 45 ° or less. In such a bonded structure, the stress under the fillet tip accompanying solidification shrinkage of the brazing material can be more reliably reduced, so that the occurrence of defects such as cracks can be more reliably prevented.

  (6) The invention of claim 6 is a first member made of a ceramic or polymer material having a metal layer on the surface, and a second member made of a ceramic having a metal layer on the surface joined to the first member. A member, a third member made of metal disposed over the metal layer of the second member from the metal layer of the first member, the metal layer of the first member, and the second A joining structure comprising: a metal layer of the member; a brazing material disposed between the third member; and a fillet formed of the brazing material around the third member; The metal layer of the first member has an extending portion whose distance from the outermost end to the third member is at least longer than the distance from the outermost end of the metal layer of the second member to the third member. And the fillet has a rising angle of 60 ° or less. To.

  In the present invention, the metal layer of the first member has a distance from the outermost end to the third member that is at least longer than the distance from the outermost end of the metal layer of the second member to the third member. Has a protruding part. In such a joint structure, when a large amount of brazing material is used in order to improve the reliability of joining, the excess brazing material flows into the extension part and forms a fillet at a part other than the extension part. The amount of brazing material will not increase. For this reason, the area of the metal layer for forming the fillet in the second member or the like is limited, and conventionally, a fillet with a rising angle exceeding 60 ° is formed, and the solidification shrinkage of the brazing material under the tip Even in the case where a large stress is applied, a fillet with a smaller rising angle can be formed, and defects such as cracks can be prevented from occurring in the second member. For this reason, it is possible to obtain a high-quality bonded structure having high bonding reliability and no defects such as cracks.

  (7) The invention according to claim 7 is the bonded structure according to claim 6, wherein the fillet has a rising angle of 45 ° or less.

  In the present invention, the fillet has a rising angle of 45 ° or less. In such a bonded structure, the stress under the fillet tip accompanying solidification shrinkage of the brazing material can be more reliably reduced, so that the occurrence of defects such as cracks can be more reliably prevented.

  (8) The invention according to claim 8 is the joint structure according to claim 6 or 7, wherein the second member is provided with a convex portion on the surface thereof close to the third member. .

  In this invention, the 2nd member is provided with the convex part which adjoins the 3rd member on the surface. In such a bonded structure, the area of the metal layer for forming the fillet in the second member is limited by the convex portion, so that the stress applied below the tip of the fillet when the brazing material solidifies and contracts is convex. It becomes larger than those without a portion, and defects such as cracks are more likely to occur in the second member made of ceramic. In the present invention, since the brazing material concentrates on the extending portion of the metal layer of the first member, the stress applied below the tip of the fillet on the second member made of ceramic increases even in such a structure. In other words, the occurrence of defects such as cracks in the portion can be prevented.

  (9) The invention according to claim 9 (semiconductor element housing package) has the junction structure according to any one of claims 1 to 8.

  In the present invention, since there can be provided a bonded structure having no defects such as cracks and sufficient bonding strength, high reliability can be obtained.

  According to the present invention, even when an excessive amount of brazing material is used, it is possible to join the metal member and the ceramic member with high reliability, and for that reason, the brazing material is excessive and cracks occur in the ceramic member. It is possible to provide a bonding structure that does not occur and a highly reliable package for housing a semiconductor element including such a bonding structure.

It is sectional drawing which shows the junction structure in the package for semiconductor element storage which concerns on 1st Embodiment. It is sectional drawing which shows the joining structure body in the package for semiconductor element accommodation which concerns on 2nd Embodiment. It is sectional drawing which shows the junction structure in the package for semiconductor element accommodation for a comparison with 2nd Embodiment. It is sectional drawing which shows the junction structure in the package for semiconductor element accommodation which concerns on 3rd Embodiment. It is sectional drawing which shows an example of the junction structure in the conventional package for semiconductor element accommodation. It is sectional drawing which shows the other example of the junction structure in the conventional package for semiconductor element accommodation. It is sectional drawing which shows the further another example of the junction structure in the conventional package for semiconductor element accommodation.

  Embodiments according to the present invention will be described below. Although the description will be made based on the drawings, the drawings are provided for illustration only, and the present invention is not limited to the drawings. It should be noted that the drawings are schematic, and the relationship between the thickness and the planar dimensions, the ratio of the thickness of each layer, and the like are different from the actual ones.

(First embodiment)
FIG. 1 is a cross-sectional view showing a bonding structure in a package for housing a semiconductor device according to the first embodiment of the present invention.

  In FIG. 1, on a member 11 (first member) made of a copper-tungsten (CuW) alloy, a member (second member) 12 made of ceramic having a convex portion 18 on the upper surface is disposed, A third member 13 made of an iron-nickel-cobalt (FeNiCo) alloy called Kovar is disposed across the first and second members. And these 1st-3rd members 11,12,13 are joined by the brazing | wax material 14 such as silver brazing.

The second member 12 is formed by stacking and firing a plurality of ceramic green sheets made of alumina (Al ₂ O ₃ ), for example. Examples of the material for the second member 12 include alumina, mullite, aluminum nitride (AlN), silicon nitride (Si ₃ N ₄ ), and beryllia. The metal layer 12a made of metallization such as tungsten (W) is formed on the side and upper surfaces of the second member 12 facing the third member 13 and the lower surface of the second member 12 facing the first member 11. , 12b are provided. On the surfaces of the metal layers 12a and 12b, if necessary, a metal having excellent wettability with the brazing material 14, for example, a nickel (Ni) layer having a thickness of about 1.0 to 2.5 μm is formed by a plating method. . A gold (Au) layer having a thickness of about 2 to 3 μm may be further formed on the nickel (Ni) layer by a plating method.

  As described above, the first member 11 is made of a copper-tungsten (CuW) alloy. Like the third member 13, the first member 11 is made of an iron-nickel-cobalt (FeNiCo) alloy called Kovar. It may also be formed of other metals. On the other hand, the third member 13 may also be formed of a copper-tungsten (CuW) alloy or other metals. Examples of other metals include a copper-molybdenum (CuMo) alloy and an iron-nickel (FeNi) alloy.

  On the surface on which the brazing material 14 of the first member 11 and the third member is disposed, a metal having excellent wettability with the brazing material 14, for example, a thickness of about 1.0 to 2.5 μm, if necessary. A nickel (Ni) layer is formed by a plating method. A gold (Au) layer having a thickness of about 2 to 3 μm may be further formed on the nickel (Ni) layer by a plating method.

  The third member 13 is disposed close to the side surface of the convex portion 18 of the second member 12. Here, “arranged in close proximity” means that the distance d between the third member 13 and the side surface of the convex portion 18 of the second member 12 is 1 mm or less. In the present embodiment, the third member 13 is disposed at a position where the distance d is 100 μm.

  And in the part facing the 1st member 11 of the 3rd member 13, C chamfering part 17 whose C chamfer dimension (length and width) is 0.1 to 0.3 mm, for example. Selectively formed.

  The brazing material 14 is formed between the third member 13 and the first member 11 in which the C chamfered portion 17 is formed, and on the side surface and the upper surface of the third member 13 and the second member 12. The metal layer 12a is disposed between the upper surface of the first member 13 and the metal layer 12b formed on the lower surface of the second member 12. Since the brazing filler metal 14 forms a homogeneous brazing filler metal layer without voids between the members, a slightly larger amount is disposed. Fillets 15 and 16 are formed around the third member 13 by the brazing material 14, but the C chamfered portion 17 is selectively formed only at a portion of the third member 13 that faces the first member 11. Therefore, the excessive brazing filler metal 14 concentrates on the C chamfered portion 17 side, accumulates between the C chamfered portion 17 and the first member 11, and the normal brazing is placed on the second member 12. The fillet 16 is formed in an amount that is the same as or less than the amount of material used.

  In the joining structure configured in this way, a larger amount of brazing material is used than usual, and between the upper surface of the first member 13 and the metal layer 12b formed on the lower surface of the second member 12. Even though the brazing material is disposed, the brazing material accumulates in the C chamfered portion 17 on the first member 11 having no possibility of generating cracks due to stress when the brazing material solidifies and shrinks. When the brazing material is solidified and contracted, the stress applied to the bottom of the fillet 16 on the second member 12 made of ceramic does not increase, and the occurrence of defects such as cracks due to the increase of the stress is prevented. Can do. For this reason, it is possible to obtain a high-quality bonded structure having high bonding reliability and no defects such as cracks. And the package for semiconductor element accommodation of this embodiment provided with such a junction structure can have high reliability.

  Table 1 shows the relationship between the amount of brazing filler metal (fillet height) forming the fillet obtained by simulation and the residual stress below the tip. As can be seen from Table 1, the residual stress increases as the amount of brazing material (fillet height) increases. In the present embodiment, since the C chamfered portion 17 serving as a reservoir portion of the brazing material 14 is selectively formed only in the portion of the third member 13 that faces the first member 12, the second member The amount of brazing material forming the fillet 16 on 12 does not increase, and therefore the residual stress does not increase. In Table 1, the residual stress is No. This is a relative value when the residual stress of 2 (fillet length 50 μm, fillet height 70 μm) is 100.

  In addition, in order to prevent generation | occurrence | production of defects, such as a crack under the fillet 16 front-end | tip part on the 2nd member 12, it is preferable that the standup angle of the fillet 16 is 60 degrees or less, and it is more preferable that it is 45 degrees or less. preferable.

(Second Embodiment)
FIG. 2 is a cross-sectional view showing a bonding structure in a package for housing a semiconductor device according to the second embodiment of the present invention.

  In FIG. 2, on a member (first member) 11 made of a copper-tungsten (CuW) alloy, a member (second member) 12 made of ceramic and iron-nickel-cobalt (FeNiCo) called Kovar. ) A third member 13 made of an alloy is disposed. And these 1st-3rd members 11,12,13 are joined by the brazing | wax material 14 such as silver brazing.

The second member 12 is formed by stacking and firing a plurality of ceramic green sheets made of alumina (Al ₂ O ₃ ), for example. Examples of the material for the second member 12 include alumina, mullite, aluminum nitride (AlN), silicon nitride (Si ₃ N ₄ ), and beryllia. On the lower surface of the second member 12 facing the first member 11, a metal layer 12b made of metallization such as tungsten (W) is provided. On the surface of the metal layer 12b, a metal excellent in wettability with the brazing material 14, for example, a nickel (Ni) layer having a thickness of about 1.0 to 2.5 μm, is formed by a plating method as necessary. A gold (Au) layer having a thickness of about 2 to 3 μm may be further formed on the nickel (Ni) layer by a plating method.

  As described above, the first member 11 is made of a copper-tungsten (CuW) alloy. Like the third member 13, the first member 11 is made of an iron-nickel-cobalt (FeNiCo) alloy called Kovar. It may also be formed of other metals. On the other hand, the third member 13 may also be formed of a copper-tungsten (CuW) alloy or other metals. Examples of other metals include a copper-molybdenum (CuMo) alloy and an iron-nickel (FeNi) alloy.

  On the surface on which the brazing material 14 of the first member 11 and the third member is disposed, a metal having excellent wettability with the brazing material 14, for example, a thickness of about 1.0 to 2.5 μm, if necessary. A nickel (Ni) layer is formed by a plating method. A gold (Au) layer having a thickness of about 2 to 3 μm may be further formed on the nickel (Ni) layer by a plating method.

  As for the 3rd member 13, the 1st member 11 is arrange | positioned adjacent to the side surface 12c of the 2nd member 12. FIG. Here, “arranged closely” means that the distance d from the side surface 13a of the third member 13 to the side surface 12c of the second member 12 is 1 mm or less. In the present embodiment, the third member 13 is disposed at a position where the distance d is 100 μm.

  The third member 13 is a portion facing the first member 11, and a portion other than the base portion of the side surface 13 a facing the second member 12 has a C chamfer dimension (longitudinal and lateral lengths). C) chamfered portion 17 having a thickness of 0.1 to 0.3 mm, for example.

  The brazing filler metal 14 is a metal formed on the lower surface of the first member 11 and the second member 12 between the third member 13 and the first member 11 where the C chamfered portion 17 is formed. It arrange | positions between the layers 12b. Since the brazing filler metal 14 forms a homogeneous brazing filler metal layer without voids between the members, a slightly larger amount is disposed. Fillets 15 and 16 are formed around the third member 13 by the brazing material 14, and are portions of the third member 13 that face the first member 11 and are the second member 12. Since the C chamfered portion 17 is selectively formed in the portion excluding the base portion of the side surface 13a facing the upper portion, the excess brazing filler metal 14 accumulates between the C chamfered portion 17 and the first member 11, On the side of the third member 13 facing the second member 12, a fillet 16 is formed in an amount that is the same as or less than that in the case where a normal amount of brazing material is used.

  That is, FIG. 3 is a cross-sectional view showing a conventional joint structure configured in the same manner as that shown in FIG. 2 except that the chamfered portion 17 is not formed. In such a conventional joint structure, since the C chamfered portion 17 serving as a reservoir portion of the brazing material 14 is not formed, the excess brazing material is formed between the third member 13 and the second member 12. It flows also between the side surfaces 13a and 12c which oppose, and the brazing | wax amount of this part increases. On the other hand, in the joined structure shown in FIG. 2, since the C chamfered portion 17 is formed, the brazing filler metal 14 is concentrated on the C chamfered portion 17 side, and the third member 13 and the second member. The amount of brazing material between the 12 opposing side surfaces 13a and 12c does not increase, but may decrease in some cases.

  In the joint structure of this embodiment, although a larger amount of brazing material is used than usual, an excessive amount of brazing material may cause cracks due to stress when the brazing material solidifies and shrinks. Since it accumulates in the C chamfered portion 17 on the first member 11 that does not exist, the stress applied to the vicinity of the fillet 16 of the second member 12 made of ceramic does not increase when the brazing material is solidified and contracted. It is possible to prevent the occurrence of defects such as cracks due to the increase in the thickness. For this reason, it is possible to obtain a high-quality bonded structure having high bonding reliability and no defects such as cracks. And the package for semiconductor element accommodation of this embodiment provided with such a junction structure can have high reliability.

  In order to prevent the occurrence of defects such as cracks in the second member 12 made of ceramic under the tip of the fillet 16, the rising angle of the fillet 16 is preferably 60 ° or less, and is approximately 45 ° or less. More preferably.

(Third embodiment)
FIG. 4 is a cross-sectional view showing a joint structure in a semiconductor element storage package according to the third embodiment of the present invention.

  In FIG. 4, on the first member 11 made of ceramic, a member (second member) 12 made of ceramic having a convex portion 18 on the upper surface is arranged, and these first and second members are further arranged. 11 and 12, a third member 13 made of an iron-nickel-cobalt (FeNiCo) alloy called Kovar is disposed. And these 1st-3rd members 11,12,13 are joined by the brazing | wax material 14 such as silver brazing.

Each of the first member 11 and the second member 12 is formed by laminating and firing a plurality of ceramic green sheets made of alumina (Al ₂ O ₃ ), for example. Examples of the material of the first and second members 11 and 12 include alumina, mullite, aluminum nitride (AlN), silicon nitride (Si ₃ N ₄ ), and beryllia. The first member 11 may be formed of a resin having good heat resistance. The upper surface of the first member 11, the lower surface of the second member 12 facing the upper surface, the side surface of the first member 11 facing the third member 13, the side surface and the upper surface of the second member 12 Are provided with metal layers 11a, 11b, 12a and 12b made of metallization such as tungsten (W). Among these, the metal layer 11 a provided on the side surface of the first member 11 facing the third member 13 extends greatly outward from the base of the third member 13. In FIG. 4, reference numeral 19 denotes an extending part that extends largely outward from the base part of the third member 13 in this way.

  In addition, on the surfaces of the metal layers 11a, 11b, 12a, and 12b, a metal excellent in wettability with the brazing material 14, for example, a nickel (Ni) layer having a thickness of about 1.0 to 2.5 μm is provided on the surface. It is formed by a plating method. A gold (Au) layer having a thickness of about 2 to 3 μm may be further formed on the nickel (Ni) layer by a plating method.

  As described above, the third member 13 is made of an iron-nickel-cobalt (FeNiCo) alloy called Kovar, but may be made of a copper-tungsten (CuW) alloy or other metals. . Examples of other metals include a copper-molybdenum (CuMo) alloy and an iron-nickel (FeNi) alloy.

  On the surface on which the brazing material 14 of the third member is disposed, a metal excellent in wettability with the brazing material 14, for example, a nickel (Ni) layer having a thickness of about 1.0 to 2.5 μm is provided as necessary. It is formed by a plating method. A gold (Au) layer having a thickness of about 2 to 3 μm may be further formed on the nickel (Ni) layer by a plating method.

  The third member 13 is disposed close to the side surface of the convex portion 18 of the second member 12. Here, “arranged in close proximity” means that the distance d between the third member 13 and the side surface of the convex portion 18 of the second member 12 is 1 mm or less. In the present embodiment, the third member 13 is disposed at a position where the distance d is 100 μm.

  The brazing filler metal 14 is formed between the third member 13 and the metal layer 11 a formed on the side surface of the first member 11, and the metal layer formed on the side surface and the upper surface of the third member 13 and the second member 12. 12 a and between the metal layer 11 b formed on the upper surface of the first member 11 and the metal layer 12 b formed on the lower surface of the second member 12. Since the brazing filler metal 14 forms a homogeneous brazing filler metal layer without voids between the members, a slightly larger amount is disposed. Then, fillets 15 and 16 are formed around the third member 13 by the brazing material 14, but the metal layer 11 a of the first member 11 greatly extends outward from the base of the third member 13. Since the extending portion 19 is provided, the excessive brazing filler metal 14 is concentrated on the extending portion 19 side, and the amount of the brazing filler metal 14 on the second member 12 is the same amount or more than that when a normal amount of brazing material is used. A small amount of fillet 16 is formed.

  In the joining structure configured in this way, a larger amount of brazing material 14 is used than usual, and the metal layer 11b formed on the upper surface of the first member 11 and the lower surface of the second member 12 are formed. Although the brazing material is disposed between the metal layer 12b and the brazing material, the brazing material concentrates on the extending portion 19 of the metal layer 11a of the first member 11, so that the brazing material solidifies and contracts. At this time, the stress applied below the tip of the fillet 16 on the second member 12 made of ceramic does not increase. On the other hand, even if excessive brazing material concentrates, there is a possibility that cracks or the like may occur in the extended portion 19. Absent. For this reason, it is possible to obtain a high-quality bonded structure having high bonding reliability and no defects such as cracks. And the package for semiconductor element accommodation of this embodiment provided with such a junction structure can have high reliability.

  In addition, in order to prevent generation | occurrence | production of defects, such as a crack under the fillet 16 front-end | tip part, it is preferable that the standup angle of the fillet 16 is about 60 degrees or less, and it is more preferable that it is about 45 degrees or less.

  The present invention is not limited to the contents described in the embodiment described above, and it goes without saying that the present invention can be implemented in various modes without departing from the gist of the present invention. For example, in the first and second embodiments, instead of the C chamfered portion 17, an R chamfered portion or a chamfered portion recessed inward may be formed. In general, the C chamfer dimension of the C chamfered portion 17 has the same vertical and horizontal lengths, but the vertical and horizontal lengths may be different.

  DESCRIPTION OF SYMBOLS 11 ... 1st member, 11a, 11b ... Metal layer, 12 ... 2nd member, 12a, 12b ... Metal layer, 13 ... 3rd member, 14 ... Brazing material, 15, 16 ... Fillet, 17 ... C surface Take-up part, 18 ... convex part, 19 ... extension part

Claims (9)

A first member made of metal, a second member made of ceramic having a metal layer on the surface, joined to the first member, and a metal layer of the second member from above the first member A third member made of metal disposed across the metal, a metal layer of the first member and the second member, and a brazing material disposed between the third member, and the third member A joint structure comprising a fillet formed of the brazing material around the member of
Said 3rd member is provided with the chamfering part used as the pool part of the said brazing material only in the part facing the said 1st member, The joining structure characterized by the above-mentioned.   The joint structure according to claim 1, wherein the second member includes a convex portion that is close to the third member on a surface thereof. A first member made of metal, a second member made of ceramic bonded onto the first member, and disposed on the first member in proximity to the second member, A third member made of metal having a side surface facing the second member, a brazing material disposed between the first member and the third member, and the periphery of the third member A joint structure comprising a fillet formed of a brazing material,
The third member includes a chamfered portion that is a portion facing the first member, except for a base portion on a side surface facing the second member, which serves as a reservoir for the brazing material. A bonded structure characterized by that.   The joint structure according to any one of claims 1 to 3, wherein a fillet on the second member or on the second member side has a rising angle of 60 ° or less.   The joint structure according to claim 1, wherein the fillet on the second member or on the second member side has a rising angle of 45 ° or less. A first member made of a ceramic or polymer material having a metal layer on the surface, a second member made of ceramic having a metal layer on the surface, which is joined to the first member, and the first member. A third member made of metal disposed over the metal layer of the second member from above the metal layer, the metal layer of the first member, the metal layer of the second member, and the third A joint structure comprising: a brazing material disposed between the first member and a fillet formed by the brazing material around the third member;
The metal layer of the first member has an extending portion whose distance from the outermost end to the third member is at least longer than the distance from the outermost end of the metal layer of the second member to the third member. And the fillet has a rising angle of 60 ° or less.   The joint structure according to claim 6, wherein the fillet 15 has a rising angle of 45 ° or less.   The joint structure according to claim 6, wherein the second member includes a convex portion that is close to the third member on a surface thereof.   A package for housing a semiconductor element, comprising the bonded structure according to claim 1.

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