JP2010244817A - Fuse resistor - Google Patents

Fuse resistor Download PDF

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JP2010244817A
JP2010244817A JP2009091652A JP2009091652A JP2010244817A JP 2010244817 A JP2010244817 A JP 2010244817A JP 2009091652 A JP2009091652 A JP 2009091652A JP 2009091652 A JP2009091652 A JP 2009091652A JP 2010244817 A JP2010244817 A JP 2010244817A
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glass
layer
fuse resistor
glaze layer
glass glaze
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JP4741016B2 (en
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Yoji Ueda
要治 植田
Keisuke Otsubo
恵輔 大坪
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Tateyama Kagaku Kogyo Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a fuse resistor having an excellent response of a blowout action and a high reliability. <P>SOLUTION: The fuse resistor is provided with a fuse element 14 which blows out at a predetermined temperature formed on a surface of an insulated substrate 12 and a glass glaze layer 16 having a high melting point glass particle covering the fuse element 14. A protective layer 18 is formed for covering the glass glaze layer 16. On both end parts of the fuse element 14, there is provided a terminal electrode 20 with a nickel-plated layer and a solder-plated layer formed. The protective layer 18 is composed of a material which is softened at a temperature of a softening point of the glass of the glass glaze layer 16 or less. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

この発明は、所定の抵抗値を有する抵抗体から成り、所定の過電流に対して溶断することにより回路を保護するヒューズとして動作するヒューズ抵抗器に関する。   The present invention relates to a fuse resistor made of a resistor having a predetermined resistance value and operating as a fuse for protecting a circuit by fusing against a predetermined overcurrent.

従来、各種電子機器の電子回路においては、過電流による発熱や損傷等から回路素子を保護するため、回路に規定値を超える電流が流れたときに、抵抗体を溶断して電流を遮断するヒューズ機能を有したヒューズ抵抗器が実装されている。   Conventionally, in an electronic circuit of various electronic devices, a fuse that cuts off a current by blowing a resistor when a current exceeding a specified value flows in the circuit in order to protect circuit elements from overheating and damage due to overcurrent. A fuse resistor having a function is mounted.

このヒューズ抵抗器は、特許文献1に開示されているように、絶縁性のセラミック基板に厚膜ヒューズが印刷形成され、両端には厚膜の電極が印刷形成されている。そして、ヒューズ及び両端の電極の一部を覆うように、低融点ガラスが印刷形成されている。低融点ガラスの厚さは、約750μm程度の厚さに形成されている。これにより、ヒューズ材料溶断時にその衝撃に耐えこれを吸収するものである。   In this fuse resistor, as disclosed in Patent Document 1, a thick film fuse is printed on an insulating ceramic substrate, and thick film electrodes are printed on both ends. And low melting glass is printed and formed so that a fuse and a part of electrode of both ends may be covered. The low melting point glass has a thickness of about 750 μm. This resists the impact and absorbs it when the fuse material is blown.

また、特許文献2〜6に開示されたヒューズ抵抗器は、ヒューズ抵抗体を覆った保護ガラス層が、ヒューズ素子を形成後に焼成されるため、概ね660℃以下の低融点ガラスを用いているものである。   Moreover, since the protective glass layer which covered the fuse resistor is baked after forming a fuse element, the fuse resistor disclosed by patent documents 2-6 uses the low melting glass of 660 degrees C or less in general. It is.

USP5453726号公報US Pat. No. 5,453,726 特開2003−234057号公報JP 2003-234057 A 特開2003−249403号公報JP 2003-249403 A 特開2004−200506号公報JP 2004-200506 A 特開平8−31300号公報JP-A-8-31300 特開平8−102244号公報JP-A-8-102244

しかしながら、上記背景技術の特許文献1に開示されたヒューズ抵抗器の場合、保護ガラスを750μm程度の厚い保護ガラス層を形成しなければならず印刷形成が難しく、ヒューズ抵抗器の厚みが増してしまうものであった。   However, in the case of the fuse resistor disclosed in Patent Document 1 of the background art, it is difficult to form the protective glass by forming a thick protective glass layer of about 750 μm, and the thickness of the fuse resistor increases. It was a thing.

さらに、特許文献2〜6に開示されたヒューズ抵抗器の場合、保護ガラス層が低融点ガラスであるため、ヒューズ抵抗の表面に印刷形成して、焼成により溶融して固化した後の状態の保護ガラス層であるので、ヒューズ抵抗体が溶断する際に容易に溶融し、ヒューズ抵抗体の溶断部分を確実に遮断するまでの時間が長く、動作の応答性が悪いという問題があった。   Further, in the case of the fuse resistors disclosed in Patent Documents 2 to 6, since the protective glass layer is a low-melting glass, the state of the state after being printed on the surface of the fuse resistor and melted and solidified by firing. Since it is a glass layer, it has a problem that it melts easily when the fuse resistor is blown, and it takes a long time to reliably cut off the blown portion of the fuse resistor, resulting in poor response of the operation.

本発明は、上記背景技術に鑑みて成されたもので、溶断動作の応答性がよく、信頼性の高いヒューズ抵抗器を提供することを目的とする。   The present invention has been made in view of the above-described background art, and an object of the present invention is to provide a fuse resistor with good responsiveness of fusing operation and high reliability.

この発明は、絶縁基板表面に、所定の温度で溶断する可溶体が形成され、この可溶体を覆って高融点ガラスの粒子を有したガラスグレーズ層が形成され、このガラスグレーズ層を覆って保護層が形成され、前記可溶体の両端部にはニッケルメッキ層と半田メッキ層が形成された端子電極が設けられたヒューズ抵抗器である。   In this invention, a soluble body that melts at a predetermined temperature is formed on the surface of the insulating substrate, a glass glaze layer having particles of a high melting point glass is formed covering the soluble body, and the glass glaze layer is covered and protected. The fuse resistor is provided with a terminal electrode in which a nickel plating layer and a solder plating layer are formed on both ends of the fusible body.

前記保護層は、300〜400μmの厚さに形成されているものである。さらに、前記ガラスグレーズ層は、前記保護層よりも薄く形成されている。好ましくは、前記ガラスグレーズ層は、50〜150μmの厚さを有する。   The protective layer is formed to a thickness of 300 to 400 μm. Furthermore, the glass glaze layer is formed thinner than the protective layer. Preferably, the glass glaze layer has a thickness of 50 to 150 μm.

また、前記ガラスグレーズ層は、軟化点が820〜900℃のガラスから成るものである。さらに、前記ガラスグレーズ層は、530〜600℃の温度で焼成されたものである。   The glass glaze layer is made of glass having a softening point of 820 to 900 ° C. Furthermore, the said glass glaze layer is baked at the temperature of 530-600 degreeC.

また、前記ガラスグレーズ層は、前記可溶体溶断時にガラス粒子が結晶化し、同時に体積が縮小して、前記保護層との間に空間が形成されるものである。   The glass glaze layer is one in which glass particles are crystallized at the time of melting the fusible body, and at the same time the volume is reduced to form a space between the glass glaze layer and the protective layer.

この発明のヒューズ抵抗体によれば、可溶体をガラスグレーズ層で覆うことにより、確実に所定の温度で可溶体が溶断し、良好なヒューズ性能が得られ、溶断時に発煙も生じないものである。   According to the fuse resistor of the present invention, by covering the fusible body with the glass glaze layer, the fusible body is surely blown at a predetermined temperature, a good fuse performance is obtained, and no smoke is generated at the time of fusing. .

この発明の一実施形態のヒューズ抵抗器の平面図サある。It is a top view of the fuse resistor of one Embodiment of this invention. 図1のA−A断面図である。It is AA sectional drawing of FIG.

以下、この発明の一実施の形態について図面を基にして説明する。この実施形態のヒューズ抵抗器10は、アルミナ等のセラミックスからなる絶縁基板12の表面に、電流路の幅狭部14aが形成された抵抗体である可溶体14が形成されている。   An embodiment of the present invention will be described below with reference to the drawings. In the fuse resistor 10 of this embodiment, a fusible body 14 which is a resistor in which a narrow portion 14a of a current path is formed is formed on the surface of an insulating substrate 12 made of ceramics such as alumina.

可溶体14の幅狭部14a上には、高軟化点のガラスグレーズ層16が形成されている。ガラスグレーズ層16は、CaO、Al、ZrO、SiOから成るガラスセラミックスである。ガラスグレーズ層16は、軟化点が800℃以上、好ましくは820〜900℃の軟化点のガラスから成る。ガラスグレーズ層16中には、ガラス粒子が溶融しない状態で存在し、ガラスグレーズ層16は、50μm以上、好ましくは50〜150μm、より好ましくは100〜150μm程度の厚さに形成されている。 On the narrow portion 14a of the fusible body 14, a glass softening layer 16 having a high softening point is formed. The glass glaze layer 16 is a glass ceramic made of CaO 2 , Al 2 O 3 , ZrO 2 , SiO 2 . The glass glaze layer 16 is made of glass having a softening point of 800 ° C. or higher, preferably 820 to 900 ° C. The glass glaze layer 16 is present in a state where glass particles are not melted, and the glass glaze layer 16 is formed to a thickness of about 50 μm or more, preferably 50 to 150 μm, more preferably about 100 to 150 μm.

さらに、ガラスグレーズ層16を覆い、幅狭部14a全体を覆った保護層18が形成されている。保護層18は、ガラスグレーズ層16よりも厚く、500μm以下、好ましくは300〜400μm程度の厚さに形成されている。保護層18の成分は、SiO、B、ZnOから成り、軟化点がガラスグレーズ層16の軟化点よりも低いガラスである。 Further, a protective layer 18 that covers the glass glaze layer 16 and covers the entire narrow portion 14a is formed. The protective layer 18 is thicker than the glass glaze layer 16 and has a thickness of 500 μm or less, preferably about 300 to 400 μm. The component of the protective layer 18 is made of SiO 2 , B 2 O 3 , ZnO, and is a glass whose softening point is lower than the softening point of the glass glaze layer 16.

絶縁基板12の両端部には、各々端子電極20が形成されている。端子電極20の表面には、ニッケルメッキ層およびSn/Pb等の半田メッキ層が形成され、チップ型ヒューズ抵抗器の電極を構成している。   Terminal electrodes 20 are respectively formed at both ends of the insulating substrate 12. A nickel plating layer and a solder plating layer such as Sn / Pb are formed on the surface of the terminal electrode 20 to constitute an electrode of a chip-type fuse resistor.

次に、この実施形態のヒューズ抵抗器の製造工程について説明する。まず、絶縁基板12上へ可溶体14を形成する。可溶体14は、Cu、Ag、Au、Alの何れかの金属材料ペーストを、スクリーン印刷等により所定形状に形成する。そして、500〜600℃で焼成して、厚膜抵抗体を形成する。   Next, the manufacturing process of the fuse resistor of this embodiment will be described. First, the fusible body 14 is formed on the insulating substrate 12. The fusible body 14 is formed of a metal material paste of Cu, Ag, Au, or Al into a predetermined shape by screen printing or the like. And it bakes at 500-600 degreeC, and forms a thick film resistor.

次に、ガラスグレーズ層16を、スクリーン印刷等により形成し、可溶体14の幅狭部14aを覆う。この状態で、600℃以下の温度、好ましくは530〜600℃程度の温度で焼成する。この後、保護層18を同様に印刷し、焼成する。保護層18の軟化点はガラスグレーズ層16のガラスよりも低く、なるべく低温で形成するほうが好ましいので、500℃程度の温度で焼成する。   Next, the glass glaze layer 16 is formed by screen printing or the like, and the narrow portion 14a of the fusible body 14 is covered. In this state, baking is performed at a temperature of 600 ° C. or lower, preferably about 530 to 600 ° C. Thereafter, the protective layer 18 is similarly printed and baked. Since the softening point of the protective layer 18 is lower than that of the glass of the glass glaze layer 16 and is preferably formed at as low a temperature as possible, the protective layer 18 is fired at a temperature of about 500 ° C.

さらに、両端部の端子電極20に、ニッケルメッキ層および半田メッキ層を順次形成して、ヒューズ抵抗器10が完成する。   Further, a nickel plating layer and a solder plating layer are sequentially formed on the terminal electrodes 20 at both ends, thereby completing the fuse resistor 10.

次に、この実施形態のヒューズ抵抗器10の機能について説明する。このヒューズ抵抗器10の可溶体14は、幅狭部14aがガラスグレーズ層16により覆われているので、過電流による発熱時に幅狭部14aが溶断する際、ガラス粒子が溶断部に侵入し可溶体14の金属残渣を抑制し、溶断を確実にする。さらに、溶断時の熱量によりガラス粒子が軟化し溶断部を遮断し、金属残渣による溶断部の再結合を阻止する。   Next, the function of the fuse resistor 10 of this embodiment will be described. Since the fusible body 14 of the fuse resistor 10 is covered with the glass glaze layer 16, the narrow portion 14a is covered with the glass glaze layer 16. Therefore, when the narrow portion 14a is melted during heat generation due to overcurrent, glass particles can enter the melted portion. The metal residue of the solution 14 is suppressed to ensure fusing. Further, the glass particles are softened by the amount of heat at the time of fusing, blocking the fusing part, and preventing recombination of the fusing part due to metal residues.

さらに、ガラスグレーズ層16は軟化点が800℃以上の高軟化温度であり、50μm以上、好ましくは100μm以上の膜厚に形成されているため、溶断時にガラス粒子が溶融後に結晶化し、その部分の体積が減少し、保護層18との間に空間が形成され、溶断時の衝撃を吸収する。これにより、保護層18が破壊されて溶断による発煙が保護層18の外へ漏れることがない。   Furthermore, since the glass glaze layer 16 has a high softening temperature of 800 ° C. or higher and a film thickness of 50 μm or more, preferably 100 μm or more, the glass particles are crystallized after melting when melted. The volume is reduced and a space is formed between the protective layer 18 and absorbs an impact at the time of fusing. Thereby, the protective layer 18 is destroyed, and fuming due to fusing does not leak out of the protective layer 18.

また、保護層18が、300〜400μm程度の厚さに形成されていることにより、ガラスグレーズ層16が想定以上の過電流による衝撃で破損する際も、確実に緩衝効果を発揮する。従って、保護層18が上記厚さよりも薄い場合は、過電流によるガラスグレーズ層16の破損に対して緩衝効果がなく、保護層18の破損や発煙等の問題が生じる恐れがある。一方、保護層18が上記厚さよりも厚い場合は、過電流に対しても耐え得るが、印刷形成が難しく、素子の厚みが厚くなり、取付部位に制約が生じる等の問題がある。   Moreover, when the protective layer 18 is formed to a thickness of about 300 to 400 μm, the buffering effect is surely exhibited even when the glass glaze layer 16 is broken by an impact caused by an overcurrent more than expected. Therefore, when the protective layer 18 is thinner than the above thickness, there is no buffering effect against damage to the glass glaze layer 16 due to overcurrent, and there is a possibility that problems such as breakage of the protective layer 18 and smoke generation may occur. On the other hand, when the protective layer 18 is thicker than the above-mentioned thickness, it can withstand overcurrent, but there are problems such as difficulty in forming a print, increasing the thickness of the element, and restricting the attachment site.

また、このヒューズ抵抗器10の端子電極20は、表面にニッケルメッキ層が形成されているため、外部のリード線等が接続された状態で、ニッケルによるバリアが形成され、Agグレーズを用いた電極に比べて、工程内での半田食われが防止されるものである。   Further, since the terminal electrode 20 of the fuse resistor 10 has a nickel plating layer formed on the surface thereof, a barrier made of nickel is formed in a state where an external lead wire or the like is connected, and an electrode using Ag glaze. In comparison with this, solder erosion in the process is prevented.

この実施形態のヒューズ抵抗器10によれば、可溶体14の幅狭部14aをガラスグレーズ層16で覆うことにより、確実なヒューズ性能が得られ、溶断時に発煙も生じないものである。   According to the fuse resistor 10 of this embodiment, by covering the narrow portion 14a of the fusible body 14 with the glass glaze layer 16, a reliable fuse performance is obtained, and no smoke is generated when blown.

なお、この発明のヒューズ抵抗器は、上記実施形態に限定されるものではなく、可溶体は、印刷形成されるもののほか、絶縁基板上に所定形状で、可溶体材料の金属をメッキすることにより形成したものであってもよい。さらには、用途により、これらの金属材料を、スパッタリング等により形成した薄膜抵抗体を用いても良い。   The fuse resistor of the present invention is not limited to the above embodiment, and the fusible body is printed and formed by plating a metal of the fusible body material in a predetermined shape on the insulating substrate. It may be formed. Furthermore, a thin film resistor formed by sputtering or the like of these metal materials may be used depending on the application.

10 ヒューズ抵抗器
12 絶縁基板
14 可溶体
14a 幅狭部
16 ガラスグレーズ層
18 保護層
20 端子電極
DESCRIPTION OF SYMBOLS 10 Fuse resistor 12 Insulating substrate 14 Soluble body 14a Narrow part 16 Glass glaze layer 18 Protective layer 20 Terminal electrode

Claims (8)

絶縁基板表面に、所定の温度で溶断する可溶体が形成され、この可溶体を覆って高融点ガラスの粒子を有したガラスグレーズ層が形成され、このガラスグレーズ層を覆って保護層が形成され、前記可溶体の両端部にはニッケルメッキ層と半田メッキ層が形成された端子電極が設けられたことを特徴とするヒューズ抵抗器。   A soluble body that melts at a predetermined temperature is formed on the surface of the insulating substrate, a glass glaze layer having particles of high-melting glass is formed covering the soluble body, and a protective layer is formed covering the glass glaze layer. The fuse resistor is characterized in that a terminal electrode on which a nickel plating layer and a solder plating layer are formed is provided at both ends of the fusible body. 前記保護層は、前記ガラスグレーズ層のガラスの軟化点以下の温度で軟化する材料により構成されている請求項1記載のヒューズ抵抗器。   The fuse resistor according to claim 1, wherein the protective layer is made of a material that softens at a temperature equal to or lower than a softening point of the glass of the glass glaze layer. 前記保護層は、300〜400μmの厚さに形成されている請求項2記載のヒューズ抵抗器。   The fuse resistor according to claim 2, wherein the protective layer is formed to a thickness of 300 to 400 μm. 前記ガラスグレーズ層は、前記保護層よりも薄く形成されている請求項3記載のヒューズ抵抗器。   The fuse resistor according to claim 3, wherein the glass glaze layer is formed thinner than the protective layer. 前記ガラスグレーズ層は、50〜150μmの厚さを有する請求項4記載のヒューズ抵抗器。   The fuse resistor according to claim 4, wherein the glass glaze layer has a thickness of 50 to 150 μm. 前記ガラスグレーズ層は、軟化点が820〜900℃のガラスから成る請求項5記のヒューズ抵抗器。   The fuse resistor according to claim 5, wherein the glass glaze layer is made of glass having a softening point of 820 to 900 ° C. 前記ガラスグレーズ層は、530〜600℃の温度で焼成されたものである請求項6記載のヒューズ抵抗器。   The fuse resistor according to claim 6, wherein the glass glaze layer is fired at a temperature of 530 to 600 ° C. 7. 前記ガラスグレーズ層は、前記可溶体溶断時にガラス粒子が結晶化し、同時に体積が縮小して、前記保護層との間に空間が形成されるものである請求項7記載のヒューズ抵抗器。
8. The fuse resistor according to claim 7, wherein the glass glaze layer is formed by crystallizing glass particles at the time of melting the fusible body and simultaneously reducing the volume to form a space between the glass glaze layer and the protective layer.
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Cited By (2)

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Publication number Priority date Publication date Assignee Title
CN106783449A (en) * 2016-11-29 2017-05-31 苏州达方电子有限公司 Surface-adhered fuse and its manufacture method with compacting arc structure
CN110199363A (en) * 2017-04-14 2019-09-03 松下知识产权经营株式会社 Chip resister

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Publication number Priority date Publication date Assignee Title
JPH0831300A (en) * 1994-07-21 1996-02-02 Kamaya Denki Kk Chip type fuse resistor
JPH08102244A (en) * 1994-09-29 1996-04-16 Kyocera Corp Chip fuse
JPH0963454A (en) * 1995-08-29 1997-03-07 Kyocera Corp Chip fuse
JP2003249403A (en) * 2002-02-25 2003-09-05 Koa Corp Chip resistor
JP2003234057A (en) * 2003-03-10 2003-08-22 Koa Corp Fuse resistor and its manufacturing method
JP2005078867A (en) * 2003-08-29 2005-03-24 Koa Corp Fusing element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106783449A (en) * 2016-11-29 2017-05-31 苏州达方电子有限公司 Surface-adhered fuse and its manufacture method with compacting arc structure
CN110199363A (en) * 2017-04-14 2019-09-03 松下知识产权经营株式会社 Chip resister
CN110199363B (en) * 2017-04-14 2022-05-17 松下知识产权经营株式会社 Chip resistor

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