JP2010239088A - Substrate supporting device and method of supporting substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate supporting device for preventing substrates from being supported abnormally because of corrosion by chemicals via the substrates. <P>SOLUTION: The substrate support device includes a support member including a back support section for supporting the back of a substrate, a position regulation section that is provided in the support member, surrounds the side of the substrate supported by the back support section, and regulates the position of the substrate, and a protective film for preventing chemical attack, where at least one of the back support section and the position regulation section includes a base material, a first film for covering the base material, and a second film stacked on the first film. Even if penetration defects occur in each film in a film formation process, the base material covering the protective film is not exposed if the first and second film defects do not overlap, thus preventing chemical attack of the base material. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a substrate transport apparatus and a substrate support method.

  In the photoresist process, which is one of the semiconductor manufacturing processes, a resist is applied to the surface of a semiconductor wafer (hereinafter referred to as a wafer), the resist is exposed in a predetermined pattern, and then developed to form a resist pattern. . Such a process is generally performed by using a system in which an exposure apparatus is connected to a coating and developing apparatus for coating and developing a resist.

  This coating and developing apparatus includes a resist coating module for coating a resist on a wafer, a developing module for supplying a developer, a resist coating module and a heating and cooling system for heating or cooling the wafer before and after processing the wafer with the developing module. Modules are included. Then, between each of these modules and between the coating / developing apparatus and the exposure apparatus, the wafer is transferred by a substrate transfer device such as a transfer arm which is one form of a substrate support device that supports and transfers the wafer. Is done. FIGS. 21A and 21B show an example of a wafer transfer unit constituting the substrate transfer apparatus.

  The wafer transfer unit 101 shown in FIGS. 21A and 21B includes a frame 102 formed in a substantially C shape, and the wafer W is held so as to be surrounded by the frame 102. A total of four wafer holding members 103 are provided on the inner periphery of the frame 102. The wafer holding member 103 is made of resin to prevent metal contamination of the wafer W, and surrounds the side surface of the wafer W by supporting the wafer W horizontally inside the frame 102 and the wafer W. The side wall part 105 for preventing the fall from the part 101 and the inclined part 106 are provided. When the peripheral edge of the wafer W rides on the inclined portion 106 during delivery or transfer of the wafer W, the back surface of the wafer W slides on the inclined portion 106 and the back surface supporting portion 104 and guides to the support region surrounded by the side wall portion 105. Is done.

  By the way, in the coating and developing apparatus, various chemicals are used for performing various processes on the surface of the wafer W. Examples of the chemical solution include the resist and the developer described above, and a chemical solution for forming an antireflection film or a protective film on the wafer W. Each of these chemical solutions may wrap around and adhere to the side surface or back surface of the wafer in a mist state, for example. When the wafer W is transferred, each wafer holding member 103 may come into contact with the chemical solution attached to the wafer W and be chemically eroded. Chemical erosion includes corrosion.

  Due to the chemical erosion, for example, the back surface support portion 104 is deformed and the wafer W is tilted and supported, or due to the chemical erosion of the side wall portion 106, the wafer W enters the erosion mark and is shifted from the normal support region. In addition, as a result of the friction coefficient of the inclined portion 106 and the back surface supporting portion 104 increasing due to wear and chemical erosion, the wafer W may not slide down the inclined portion 106. As a result, the wafer W may fall from the wafer transfer unit 101 during transfer, or the wafer W may not be delivered to a normal position of each module, and processing may not be performed normally.

  In addition, each module of the coating and developing apparatus is provided with a stage having a back surface support portion of the wafer W as a substrate support device, and the wafer W placed on the back surface support portion is prevented from skidding. A position restricting portion that surrounds the side surface may be provided. The mounting area surrounded by the position restricting portion is also set larger than the diameter of the wafer W in consideration of the error of the wafer W. And also about such a stage, chemical erosion by the chemical solution of the back surface support part and the position restricting part occurs like the wafer holding member 103, and the wafer W is placed on the stage so as to be shifted from the placement area. By tilting, normal processing may not be performed, or normal transfer of the wafer W may not be performed with the substrate transfer apparatus.

  In order to prevent such wear and chemical erosion, it is conceivable to form a protective film on the wafer holding member 103 by CVD, PVD, or the like. However, in the protective film formed in this way, a fine hole penetrating in the thickness direction may be formed as a defect, and the wafer holding member is exposed to the chemical solution through the through defect. There is a possibility that the wafer holding member 103 cannot be sufficiently protected.

  Patent Document 1 describes that a mechanical part substrate made of a resin is coated with a diamond-like carbon film, but it does not solve the above-described problem of formation of defects in the through holes. Further, Patent Document 2 describes the wafer transfer unit described above, but does not describe a technique that can solve the above problem.

Patent 335950 (paragraph 0017) JP-A-11-243133 (FIG. 7 and others)

  The present invention has been made under such circumstances, and an object of the present invention is to provide a substrate support apparatus and a substrate support method capable of preventing a substrate from being unable to be normally supported due to chemical erosion by a chemical through the substrate. Is to provide.

The substrate support apparatus of the present invention includes a support member provided with a back surface support portion for supporting the back surface of the substrate,
A position restricting portion that is provided in the supporting member and surrounds a side surface of the substrate supported by the back surface supporting portion and restricts the position of the substrate;
At least one of the back surface support portion and the position restriction portion includes a base material, a first film that covers the base material, and a second film laminated on the first film. And a protective film for preventing mechanical erosion.

  The substrate support device includes, for example, a base that supports the support member, and a drive mechanism that moves the support member relative to the base, and is configured as a substrate transport device. The support member may be a temperature adjustment plate for heating or cooling the substrate. For example, an inclined portion is provided for guiding the substrate onto the back surface support portion by descending from the outside of the support region of the substrate surrounded by the position restricting portion toward the support region, sliding down the peripheral edge portion of the substrate. The inclined portion is constituted by the base material and the protective film.

  The base material is made of, for example, a resin, and in this case, at least one of the position restricting portion, the back surface supporting portion, and the inclined portion holds a large number of fibers, and the tip of the fiber is constituted by a base material protruding from the surface. The protective film may cover the tip of the fiber to prevent wear of the position restricting portion, the back surface supporting portion, or the inclined portion. The protective film is made of, for example, diamond-like carbon. The main component constituting the first film and the main component constituting the second film are different from each other, for example, and fluorine is contained as the main component constituting the first film. Silicon may be included as a main component constituting the.

The substrate support method of the present invention includes a step of supporting the back surface of the substrate by a support member having a back surface support portion,
Surrounding the side surface of the substrate supported by the back surface support portion by the position restriction portion provided on the support member, and regulating the position of the substrate;
With
At least one of the back surface support part and the position restriction part includes a base material, a first film covering the base material, and a second film laminated on the first film. It is characterized by being coated with a protective film to prevent mechanical erosion.

  The substrate support method includes, for example, a step of supporting the support member by a base, and a step of moving the support member relative to the base by a driving mechanism and transporting the substrate, and the support member The step of heating or cooling the substrate may be included. A step of sliding the peripheral edge of the substrate down by an inclined portion that descends toward the support region from the outside of the support region of the substrate surrounded by the position restricting portion, and guiding the substrate onto the back surface support portion; The inclined portion may be constituted by the base material and the protective film. The base material is made of, for example, a resin. In this case, at least one of the position restricting portion, the back surface support portion, and the inclined portion holds a large number of fibers, and the tip of the fiber is configured by a base material protruding from the surface. The protective film may cover the tip of the fiber to prevent wear of the position restricting portion, the back surface supporting portion, or the inclined portion.

  The substrate support apparatus of the present invention is supported by the back surface support portion that supports the back surface of the substrate or the back surface support portion by the protective film composed of the first film and the second film laminated on the first film. A position restricting portion that surrounds the side surface of the substrate and restricts the position of the substrate is covered. Even if through-holes that pass through the respective films are formed in the first film and the second film due to an abnormality in the film formation process, the through-holes do not overlap with each other. Since it is not exposed, it can be prevented that the base material is chemically eroded and the substrate cannot be normally supported.

It is a top view of the application | coating and developing apparatus provided with the board | substrate conveyance apparatus which concerns on embodiment of this invention. It is a perspective view of the coating and developing apparatus. It is a vertical side view of the coating and developing apparatus. It is a perspective view of the processing block of the said coating and developing apparatus. It is a perspective view of the wafer conveyance part provided in the conveyance arm of the said processing block. It is a vertical side view of the said wafer conveyance part. It is the perspective view of the said wafer holding member, and the longitudinal cross-sectional view of the surface of the wafer holding member. It is process drawing which showed the manufacturing process of the said wafer holding member. It is process drawing which showed the process in which a wafer is delivered to the said wafer conveyance part. It is explanatory drawing which showed a mode that the wafer was delivered to the said wafer holding member. It is explanatory drawing which showed a mode when a wafer collided with the side wall part of a wafer holding member. It is the vertical side view which showed the other example of the wafer holding member. It is the top view and vertical side view of the interface arm provided in the said application | coating and image development apparatus. It is a perspective view of the wafer conveyance part of the said interface arm. It is explanatory drawing which showed the process in which the said wafer conveyance part receives a wafer. It is the top view and vertical side view of the heating plate of the heating module provided in the said application | coating and image development apparatus. It is process drawing which showed the process in which a wafer is delivered to the said heating plate. It is explanatory drawing of the apparatus used by the evaluation test. It is the graph which showed the result of the evaluation test. It is the graph which showed the result of the evaluation test. It is the top view and vertical side view of the wafer conveyance part of the conventional conveyance arm.

  The coating and developing apparatus 1 provided with the substrate transfer apparatus of the present invention will be described. FIG. 1 is a plan view of a resist pattern forming system in which an exposure apparatus C4 is connected to the coating and developing apparatus 1, and FIG. 2 is a perspective view of the system. FIG. 3 is a longitudinal sectional view of the system. The coating / developing apparatus 1 is provided with a carrier block C1, and the transfer arm 12 takes out the wafer W from the hermetically sealed carrier 10 mounted on the mounting table 11 and transfers it to the processing block C2. The transfer arm 12 is configured to receive the processed wafer W from C2 and return it to the carrier 10.

  As shown in FIG. 3, the processing block C2 is a first block (DEV layer) B1 for performing development processing and a first processing for forming an antireflection film formed under the resist film in this example. 2 block (BCT layer) B2, a third block (COT layer) B3 for applying a resist film, and a fourth block (ITC for forming a protective film formed on the upper side of the resist film) Layer) B4 is laminated in order from the bottom.

  Since each layer of the processing block C2 is configured in the same manner as in plan view, the third block (COT layer) B3 will be described as an example. The COT layer B3 is a resist film formation for forming a resist film as a coating film. A module 13, shelf units U1 to U4 constituting a processing module group of a heating / cooling system for performing pre-processing and post-processing of the processing performed in the resist film forming module 13, and the resist film forming module 13 A transfer arm A3 is provided between the processing module groups of the heating / cooling system, and is a substrate transfer apparatus that transfers the wafer W between them.

  The shelf units U1 to U4 are arranged along the transport region R1 in which the transport arm A3 moves, and are configured by stacking the heating module 21 and the cooling module, respectively. The heating module 21 includes a heating plate 7 for heating the mounted wafer, and the cooling module includes a cooling plate for cooling the mounted wafer. FIG. 1 shows a heating module 21. The heating module 21 moves between the transfer region R 1 side and the heating plate 7 side to mediate delivery of the wafer W and to cool the heated wafer W. A cooling plate 24 is provided. The configuration of the heating plate 7 will be described later.

  For the second block (BCT layer) B2 and the fourth block (ITC layer) B4, an antireflection film forming module and a protective film forming module corresponding to the resist film forming module are provided, respectively. Instead, the configuration is the same as that of the COT layer B3 except that a chemical solution for forming an antireflection film and a chemical solution for forming a protective film are supplied to the wafer W, respectively.

  For the first block (DEV layer) B1, development modules corresponding to the resist film forming module are stacked in two stages in one DEV layer B1, and heating for pre-processing and post-processing of the development module is performed. A shelf unit constituting a processing module group of the cooling system is provided. In the DEV layer B1, a transfer arm A1 for transferring the wafer W to the two-stage development module and the heating / cooling processing module is provided. That is, the transport arm A1 is shared by the two-stage development module.

  Further, as shown in FIGS. 1 and 3, the processing block C2 is provided with a shelf unit U5, and the wafer W from the carrier block C1 is one delivery unit of the shelf unit U5, for example, a second block (BCT layer). It is sequentially conveyed to the corresponding delivery unit CPL2 of B2. The transfer arm A2 in the second block (BCT layer) B2 receives the wafer W from the transfer unit CPL2 and transfers it to each unit (antireflection film forming module and heating / cooling processing unit group). Thus, an antireflection film is formed on the wafer W.

  Thereafter, the wafer W is transferred to the transfer unit BF2 of the shelf unit U5, the transfer arm D1, and the transfer unit CPL3 of the shelf unit U5, where the temperature is adjusted to, for example, 23 ° C., and then the third block ( COT layer) B3 and a resist film is formed by the resist film forming module 13. Further, the wafer W is transferred to the transfer unit BF3 in the shelf unit U5 through the transfer arm A3 → the transfer unit BF3 of the shelf unit U5 → the transfer arm D1. The wafer W on which the resist film is formed may further have a protective film formed in the fourth block (ITC layer) B4. In this case, the wafer W is transferred to the transfer arm A4 via the transfer unit CPL4, and after the protective film is formed, the wafer W is transferred to the transfer unit TRS4 by the transfer arm A4.

  On the other hand, on the upper part in the DEV layer B1, a shuttle arm 14 as a dedicated transfer means for directly transferring the wafer W from the transfer unit CPL11 provided in the shelf unit U5 to the transfer unit CPL12 provided in the shelf unit U6. Is provided. The wafer W on which the resist film and the protective film are further formed is transferred from the transfer units BF3 and TRS4 to the transfer unit CPL11 via the transfer arm D1, and from here to the transfer unit CPL12 of the shelf unit U6 by the shuttle arm 14 directly. It is conveyed and taken into the interface block C3. Note that the delivery unit with CPL in FIG. 3 also serves as a cooling unit for temperature control, and the delivery unit with BF also serves as a buffer unit on which a plurality of wafers W can be placed.

  Next, the wafer W is transferred to the exposure apparatus C4 by the interface arm 50, and after a predetermined exposure process is performed here, the wafer W is placed on the delivery unit TRS6 of the shelf unit U6 and returned to the processing block C2. The returned wafer W is subjected to development processing in the first block (DEV layer) B1, and transferred to the transfer unit TRS1 of the shelf unit U5 by the transfer arm A1. Thereafter, it is returned to the carrier 10 via the delivery arm 12.

    Here, a transfer arm A3 which is a substrate transfer device constituting one embodiment of the substrate support device for the COT layer B3 will be described with reference to FIG. The transfer arm A3 includes a horizontal moving unit 25 that moves along the transfer region R1, an elevating base 26 that moves the horizontal moving unit 25 up and down, and a rotating base 27 that rotates about the vertical axis on the elevating base 26. It is equipped with. The rotating base 27 is provided with two wafer transfer units 3 that are supported by the rotating base 27 and move back and forth independently of each other on the rotating base 27. The operations of the horizontal moving unit 25, the elevating base 26, and the rotating base 27 are performed via a driving mechanism (not shown).

  The wafer transfer unit 3 will be described with reference to FIGS. The wafer transfer unit 3 has the same shape as the wafer transfer unit 101 shown in the background section, and has a protrusion 32 that is divided into two forks from the base and is formed in a substantially C-shape. It has. On the inner peripheral side of the frame 32, four wafer holding members 33 for holding the wafer W on the inner peripheral side are provided at intervals. The wafer transfer unit 3 including the frame 32 and the wafer holding member 33 constitutes a substrate support member.

  The wafer holding member 33 will be described with reference to FIG. In FIG. 7 (a), a number of points are given and portions covered with a protective film 41 described later are shown. The wafer holding member 33 includes a back surface support portion 34 that supports the back surface of the wafer W, a lower vertical wall portion 35 that surrounds and regulates the side surface of the wafer W supported by the back surface support portion 34, and the lower side And an inclined portion 36 that is continuous with the vertical wall portion 35 and formed so as to descend toward the lower vertical wall portion 35. The inclined portion 36 has a role of sliding the peripheral portion of the wafer W riding on the inclined portion 36 and guiding the wafer W to the support region 30 surrounded by the lower vertical wall portion 35. As described in the background art section, the wafer holding member 33 is provided on the frame 32 so that the diameter of the support region 30 is slightly larger than the diameter of the wafer W.

  An upper vertical wall portion 37 is formed on the inclined portion 36 so as to be continuous with the inclined portion 36. When the wafer W is transferred by the wafer transfer unit 3, the upper vertical wall portion 37 has a peripheral portion of the wafer W that has run on the inclined portion 36 from the support region 30 due to inertia or impact. The wafer W has a role of suppressing the wafer W from falling from the holding member 33.

  In order to prevent metal contamination of the wafer W, the wafer holding member 33 is composed of a base material 40 made of a molded body of, for example, PEEK (polyether ether ketone) resin. As shown in FIG. In order to improve the strength, a large number of carbon fibers 45 are mixed and held. The diameter of the carbon fiber 45 is, for example, about 7 μm, and the length is, for example, 0.1 mm to 6 mm. And the front-end | tip of many carbon fibers 45 protrudes about 1 micrometer-5 micrometers from the surface of the said base material 40. FIG.

  As shown in FIGS. 6 and 7 (b), a protective film 41, which is a two-layered film, is formed on the surfaces of the back surface support portion 34, the lower vertical wall portion 35, and the inclined portion 36. The protective film 41 includes a lower layer film 42 and an upper layer film 43, and the lower layer film 42 and the upper layer film 43 are made of DLC (diamond-like carbon), which is an amorphous hard film made of a hydrocarbon or carbon allotrope. Yes. In the figure, 44 is a through hole (through defect) formed in each of the films 42 and 43 at the time of film formation. Since DLC has higher hardness than the base material 40, it has high wear resistance, high corrosion resistance against various chemicals, and its coefficient of friction is lower than that of the base material 40.

  Since the upper layer film 43 comes into contact with the wafer W during delivery and transfer of the wafer W, C (carbon) is used as a main component so as to obtain a lower friction coefficient, higher smoothness, and wear resistance due to higher hardness. ), H (hydrogen) and Si (silicon). The lower layer film 42 formed directly on the base material 40 has high water repellency with respect to the chemical solution, prevents the chemical solution from penetrating into the base material 40, and provides the main component so as to obtain high corrosion resistance. It is constituted by a DLC film containing C, H and F (fluorine). That is, the upper layer film 43 has a lower friction coefficient, higher smoothness, and higher wear resistance than the lower layer film 42, and the lower layer film 42 has higher water repellency than the upper layer film 43.

  The protective film 41 prevents the chemical solution from being supplied to the base material 40 through a gap between the protective film 41 and the carbon fiber 45 protruding from the surface of the base material 40 and sufficiently reduces the friction coefficient. The tip of the carbon fiber 45 is covered and formed to have a film thickness larger than the length of the protruding tip. Further, as the thickness H1 of the protective film 41 in FIG. 7B, if the thickness is too small, the film density is small, and there is a possibility that the chemical solution permeates the protective film 41 and erodes the base material 40, If the thickness is too large, the wafer W will not be deformed following the base material 40 when it collides as will be described later, and there is a risk that the shock absorption will be reduced, for example, 1 μm to 10 μm. It is preferable. Further, the thickness H2 of the lower layer film 42 is, for example, 1 μm to 3 μm in order to obtain sufficient water repellency, and the thickness H3 of the upper layer film 43 is, for example, 5 μm to 10 μm in order to obtain sufficient hardness.

  A method for manufacturing the wafer holding member 33 will be described. A large number of carbon fibers 45 are mixed with the molten resin, the mixture is filled in a mold 46 for molding the wafer holding member 33, and the resin is cured in the mold 46 to form the base material 40. . FIG. 8A shows the boundary between the substrate 40 and the mold 46, and the tip of the carbon fiber 45 existing in the vicinity of the boundary is pressed against the mold 46 by expansion and contraction when the resin is cured. It is bent and is in close contact. In addition, slight irregularities may be formed on the surface of the substrate 40 according to the shape such as the surface roughness of the inner surface of the mold 46. Then, when the wafer holding member 33 is removed from the mold 46 as shown in FIG. 8B, the tip of the bent carbon fiber 45 tries to jump outward (restoring force of the fiber 45). Or depending on the shape of the inner surface of the mold 46, the wafer holding member 33 rises and protrudes from the surface. In addition, about the fiber 45, although the front-end | tip protruded from the base material 40 surface and the part embedded in the base material 40 are drawn with the same thickness in each figure, the said front-end | tip is crushed by the metal mold | die 43, and the base material 40 is shown. In some cases, the diameter is smaller than the portion buried in the surface.

  Thereafter, the lower layer film 42 is formed as shown in FIG. 8C by, for example, PVD (Physical Vapor Deposition) or CVD (Chemical Vapor Deposition). Since the carbon fiber 45 protrudes from the surface of the base material 40 and has a complicated unevenness, the lower layer film 42 is formed so as to be embedded in the unevenness. Therefore, the lower layer film 42 is formed with high adhesion to the base material 40. Thereafter, as shown in FIG. 8D, an upper film 43 is formed by PVD or CVD to form a protective film 41. Since the films are laminated in this way, even if the through hole 44 is formed in the lower layer film 42, the through hole 44 is covered with the upper layer film 43, and even if the upper layer film 43 has a through hole 44, The presence of the lower layer film 42 on the side prevents the surface of the base material 40 from being exposed by the through hole 44.

For example, when the DLC protective film 41 is formed by a plasma CVD method, the raw material gases include methane (CH ₄ ), ethane (C ₂ H ₆ ), propane (C ₃ H ₈ ), butane that are generally used for DLC formation. A carbon compound gas such as (C ₄ H ₁₀ ), acetylene (C ₂ H ₂ ), benzene (C ₆ H ₆ ), carbon tetrafluoride (CF ₄ ), carbon hexafluoride (C ₂ F ₆ ) or the like is used. . If necessary, hydrogen gas, inert gas, or the like as a carrier gas is mixed with these carbon compound gases and supplied to the wafer W to form a film. In this example, the lower layer film 42 is formed by supplying a raw material gas containing carbon, hydrogen and fluorine to the base material 40, and the upper layer film 43 is made of a raw material gas containing carbon, hydrogen and silicon on the base material 40. Supplied and formed.

  Next, a process when the wafer transfer unit 3 of the transfer arm A3 receives the wafer W from the stage 47 provided in the transfer unit BF3 will be described with reference to FIG. The wafer transfer unit 3 moves forward toward the stage 47 and is positioned below the wafer W placed on the stage 47 as shown in FIG. Thereafter, the wafer transfer unit 3 is lifted, and the back surface of the wafer W is supported by the back surface support unit 34 of some of the four wafer holding members 33 as shown in FIG. The wafer W is transferred to the wafer transfer unit 3 in a tilted state so as to be positioned on a part of the tilted portions 36 among the four.

  Thus, when the wafer W is transferred to the wafer holding member 33, the inclined portion 36 and the back surface support portion 34 are covered with the protective film 41, so that damage due to the impact is suppressed. In particular, the upper layer film 43 of the protective film 41 contains silicon so as to be harder, so that breakage can be more reliably suppressed. At this time, as shown in FIGS. 10A and 10B, the protective film 41 is laminated as described above even if the chemical mist 48 adheres to the bevel portions which are the back and side surfaces of the wafer W. Since it is configured as a film and the base material 40 is prevented from being exposed by the through holes 44, the base material 40 is prevented from being exposed to the mist 48. Further, since the lower layer film 42 contains fluorine in order to obtain water repellency, even if the mist 48 adheres to the lower layer film 42 through the through hole 44 of the upper layer film 43, it penetrates into the base material 40 due to the water repellency. Therefore, chemical erosion by the mist 48 can be prevented more reliably.

  Since the protective film 41 has a low coefficient of friction, the peripheral edge of the wafer W quickly slides down the inclined portion 36 and the wafer W slides on the back surface support portion 34. As shown in FIG. W is located in the support region 30 surrounded by the lower side wall 35 and is held horizontally.

  Thereafter, when the wafer holding member 33 moves in the horizontal direction, the wafer W slides on the back surface support portion 34 due to inertial force and collides with the lower vertical wall portion 35. The state of the lower vertical wall portion 35 at this time will be described with reference to FIG. Due to the collision, stress is applied to the wafer holding member 33, and the base material 40 made of the resin is deformed. At this time, since the lower layer film 41 is intertwined with the carbon fiber 45 as described above, the protective film 41 is formed with high adhesion to the base material 40, so that the lower layer film 42 follows the base material 40. Since the upper layer film 43 is the same DLC as the lower layer film 42 and has high adhesion to the lower layer film 42, the upper layer film 43 is deformed following the deformation of the lower layer film 42. As the protective film 41 and the base material 40 are thus deformed, the stress is dispersed from the collision portion of the wafer W in the lower vertical wall portion 35, and the dispersed stress is absorbed by the base material 40 at each portion ( FIG. 11 (a), (b)). When the stress is weakened, the base material 40 returns to the original shape by the restoring force, and the protective film 41 also follows the base material 40 and returns to the original shape (FIG. 11C).

  The manner in which the stress is absorbed has been described by taking the lower vertical wall portion 35 as an example, but the wafer W is similarly transferred to the back surface support portion 33 and the inclined portion 36 as described above, or the surface thereof is slid. Even when a strong stress is applied during the movement, since the protective film 41 is formed with high adhesion to the substrate 40, the stress is widely dispersed in the same manner as the lower vertical wall portion 35. Therefore, high wear resistance can be obtained.

  In addition, the manner in which the base material 40 is prevented from being exposed to the chemical mist 48 when the wafer W is transferred to the wafer holding member 33 has been described. For example, during the transfer of the wafer W as described above. Even when the wafer W collides with the lower vertical wall portion 35, the mist 48 attached to the side surface of the wafer W passes through the through hole 44 and the base of the lower vertical wall portion 35 is the same as when the wafer W is delivered. Since adhesion to the material 40 is prevented, erosion is prevented.

  As described above, the wafer holding member 33 of the wafer transfer unit 3 includes the back surface support unit 33 for holding the wafer W and the inclination for guiding the wafer W so that the wafer W is held by the back surface support unit 33. A lower vertical wall portion 35 that surrounds and regulates the position of the portion 36 and the wafer W, and the surfaces of the back surface support portion 33, the inclined portion 36, and the lower vertical wall portion 35 are formed of DLC. A protective film 41 composed of a lower layer film 42 and an upper layer film 43 is formed. Therefore, even if the through holes 44 that are penetration defects are formed in the respective films 42 and 43, the base material 40 that constitutes each part is not exposed unless they overlap each other. Erosion is suppressed. As a result of the improved corrosion resistance, the wafer W can be reliably held in the support region 30 of the wafer transfer unit 3, so that the wafer W falls from the wafer transfer unit 3 during transfer or the wafer W is loaded. It is possible to prevent the module from being successfully transferred to the installed module. Further, since the DLC has a low coefficient of friction, the wafer W can easily slide on the inclined portion 36 and the back surface support portion 34, and the wafer W can be reliably held by the support region 30 of the wafer transfer portion 3.

  In addition, by covering the carbon fiber 45 protruding from the base material 40 with the protective film 41 as described above, the adhesion of the protective film 41 to the base material 40 and the strength of the protective film 41 are improved. Can absorb the impact, provide higher wear resistance, suppress the impact applied to the wafer W, and reduce damage such as chipping (chipping) of the wafer W.

The lower layer film 42 and the upper layer film 43 may be composed of, for example, C and H as main components, and may be configured as DLC films not including F and Si, respectively. In addition to C and H, for example, Si and The lower layer film 42 and the upper layer film 43 may be configured as a film containing N (nitrogen), a DLC film containing Si and O (oxygen), or a DLC film containing C, H, or SiO ₂ . The N is contained in the film as a CN group, for example. The lower layer film 42 may contain C, H, and Si as main components, and the upper layer film 43 may contain C, H, and F as main components. A film having a low coefficient is preferably used as the upper film.

  Further, for example, the upper layer film 43 and the lower layer film 42 may be configured as films having the same main component. For example, a film composed of C and H as main components may be configured as the upper layer film 43 and the lower layer film 42. In that case, the lower layer film is compared with the upper layer film in order to suppress the penetration of the chemical solution into the base material 40, for example. It is preferable to form the upper layer film so as to have higher density and higher smoothness and lower friction coefficient than the lower layer film. Further, the upper layer film 43 and the lower layer film 42 may be composed of films having the same composition, and the protective film 41 is not limited to two layers, and may be composed of a laminated film of three or more layers.

  As shown in FIG. 12A, the upper layer film 43 may not cover the entire lower layer film. Further, as shown in FIG. 12B, the tip of the carbon fiber 45 protruding from the base material 40 may penetrate the lower layer film 42 and reach the upper layer film 43. Further, the strength of the base material 40 and the adhesion of the protective film can be improved by mixing, for example, a glass fiber instead of the carbon fiber into the resin base material 40 as a fiber that is a fibrous body.

  By the way, the material constituting the protective film 41 is not limited to DLC, and any material that has high corrosion resistance or high hardness with respect to various chemicals may be used. Ceramics such as SiC and AlN (aluminum nitride), quartz members, and the like are used. May be. For example, the protective film 41 may be formed of a hydrocarbon resin having a high wear resistance in which a high proportion of carbon and purified hydrocarbons are mixed homogeneously with an acrylic resin such as polycarbonate. The carbon content of this hydrocarbon resin is, for example, 80% or more.

  For example, the protective film 41 preferably has a Vickers hardness of 1000 to 3000, a smoothness of Ra of 0.5 nm to 1.0 nm, and a friction coefficient of 0.2 or less. In addition, as described above, in order to form a film on a substrate made of a resin, it is preferable to select a material that can be formed at a low temperature of, for example, 200 ° C. or lower in order to prevent the deterioration of the substrate.

  The wafer holding members of the transfer arms A1, A2, A4 and the transfer arm D1 are configured in the same manner as the wafer holding member 33 of the transfer arm A3.

  Subsequently, as another example of the wafer transfer unit, FIG. 13A is a plan view of a wafer transfer unit 5 provided in the interface arm 50, FIG. 13B is a vertical side view thereof, and a perspective view thereof. The difference from the wafer transfer unit 3 will be mainly described with reference to FIG. The wafer transfer unit 5 is supported by a rotating base 51 shown in FIG. 13A and is provided so as to move back and forth with respect to the transfer base 51. The rotating base 51 can be raised and lowered as well as the rotary base 27. It is configured. The rotating base 51 is provided with pressing parts 52 for aligning the wafer W on the left and right sides of the wafer transfer part 5, and the pressing part 52 moves together with the rotating base 51.

  The wafer transfer unit 5 includes a frame 53 formed in a fork shape. The wafer 53 is subjected to the same manufacturing process as that of the wafer holding member 33 on each front end side in the same manner as the wafer holding member 33. A wafer holding member 54 composed of a carbon fiber 45 and a base material 40 made of PEEK resin is provided. The wafer holding member 54 includes a back surface support portion 56 for horizontally supporting the wafer W, and a vertical wall portion 57 provided on the front end side of the back surface support portion 56. The back support 56 and the vertical wall 57 are covered with the protective film 41 described above. The vertical wall portion 57 has a role of regulating the position of the wafer W in the wafer holding member 54.

  On the base end side of the frame 53, a wafer holding member 61 constituted by a base material 40 and a base material 40 made of PEEK resin is provided through the same manufacturing process as the wafer holding member 33. The wafer holding member 61 includes a back surface support portion 62 for horizontally supporting the back surface of the wafer W, a lower vertical wall portion 63 provided on the base end side of the back surface support portion 62, and a front end side from the base end side. And an inclined portion 64 that descends downward. The inclined portion 64 has a role of guiding the wafer W to the back surface support portion 62 in the same manner as the inclined portion 36. The back support 62 and the lower vertical wall 63 are covered with the protective film 41. In the figure, reference numeral 60 denotes a support region of the wafer W surrounded by the lower vertical wall portion 63 and the vertical wall portion 57. In FIG. 14, a number of points are attached to the portions covered with the protective film 41. The wafer transfer unit 5 including the frame 53 and the wafer holding members 54 and 61 constitutes a substrate support member.

  The manner in which the wafer transfer unit 5 receives the wafer W from the stage 69 provided in the transfer unit CPL12 will be described with reference to FIG. After the wafer transfer unit 5 moves forward toward the stage 69 and is positioned below the wafer W placed on the stage 69, the wafer transfer unit 5 moves up (FIGS. 15A and 15B), and the back support unit 56 and For example, the wafer W is transferred to the wafer transfer unit 5 while being supported by the inclined portion 64 (see FIG. 15C). Thereafter, the wafer transfer unit 5 moves backward, the side surface of the wafer W comes into contact with the pressing unit 52, and is pressed toward the front end of the wafer transfer unit 5, so that the wafer W slides down the inclined unit 64, and the back support units 56 and 62. (FIG. 15D). The wafer W slides on the back support portions 56 and 62 due to the inertial force, and comes into contact with the vertical wall portion 57 and stops (FIG. 15E). Thus, when the wafer W is transferred to and transferred to the wafer transfer unit 5, even if the wafer W comes into contact with each part of the wafer holding members 54 and 61, the holding members 54 and 61 are held by the protective film 41. Chemical erosion and wear of the substrate 40 to be configured are suppressed.

  Although the wafer transfer unit 5 of the interface arm 50 has been shown, the wafer transfer unit of the transfer arm 12 is configured in the same manner as the wafer transfer unit 5. In these wafer transfer units 3 and 5, the entire surface may be covered with the protective film 41, and in the wafer transfer unit 5, the pressing part 52 may be covered with the protective film 41.

  Next, FIG. 16A which is a plan view and FIG. 16B which is a longitudinal side view of the heating plate 7 constituting the substrate support device provided in the heating module 21 of the COT layer B3 described above. The description will be given with reference. The heating plate 7 also serves as a stage on which the wafer W is placed, and is formed in a flat circular shape. Three holes (only two are shown in FIG. 16B) are provided in the thickness direction of the heating plate 7 in the circumferential direction. It has been drilled. In the hole 71, an elevating pin 73 that is raised and lowered by an elevating mechanism 72 is provided, and protrudes and sinks on the heating plate 7. A heater for heating the wafer W is provided inside the heating plate 7.

  In the heating plate 71, a plurality of support pins 74, which are four back surface support portions in this example, are provided outside the hole 71 in the circumferential direction. The support pins 74 have a role of supporting the wafer W while floating from the surface of the heating plate 71. In addition, a large number of position regulating pins 75 for preventing the wafer W from jumping out from the heating plate 71 are provided at the peripheral edge of the heating plate 71. The support pins 74 and the position regulating pins 75 are manufactured through the same manufacturing process as the wafer holding member 33. The support pins 74 and the position regulating pins 75 are constituted by the carbon fiber 45 and the base material 40 made of PEEK resin, like the wafer holding member 33, and the surface thereof is a protective film made of the lower layer film 42 and the upper layer film 43. 41 is covered.

  A process of transferring the wafer W to the heating plate 71 will be described with reference to FIG. When the wafer W is delivered to the cooling plate 24, the cooling plate 24 moves onto the heating plate 71, and the elevating pins 73 are raised to support the back surface of the wafer W (FIG. 17A). Then, after the cooling plate 24 is retracted from the heating plate 71, the elevating pins 73 are lowered, and the wafer W is transferred onto the support pins 74 (FIG. 17B).

  At this time, the wafer W may slide on the support pins 74 and collide with the position regulating pins 75 as shown in FIG. 17C due to the air between the heating plate 71 and the back surface of the wafer W. However, like the wafer holding member 33, the protective film 41 prevents the support pins 74 and the position regulating pins 75 from being worn. Even if the chemical solution adheres to the wafer W, the protective film 41 prevents the support pins 74 and the position regulating pins 75 from being eroded.

  The above-described protective film can be applied to all substrate contact portions in addition to the above examples. For example, the protective film 41 may be formed on the surface of the stage on which the substrate of the film forming apparatus or the etching apparatus is placed, or the position regulating pin 74 covered with the protective film 41 may be provided.

  The protective film 41 may be formed on the entire surface of each of the wafer holding members 33, 54, and 61 by various methods for forming the protective film, and at least a portion of the contact area of the substrate. It suffices if the film is formed. Moreover, as resin which comprises the base material 40, well-known resin can be used besides PEEK.

(Evaluation Test 1)
As the evaluation test 1-1, as shown in FIG. 18, four wafer holding members 33 were arranged in the circumferential direction, and the wafer W was placed on the back surface support portion 34 thereof. Each wafer holding member 33 is connected to a driving unit (not shown) so that the wafer holding member 33 can be reciprocated in the horizontal direction as indicated by an arrow in the drawing while keeping the interval between the wafer holding members 33. Further, the position of each wafer holding member 33 is adjusted so that the lower side wall portion 35 of the wafer holding member 33 is slightly separated from the side surface of the wafer W. However, the protective film 41 made of DLC described in the embodiment is not formed on the wafer holding member 33. Further, the wafer holding member 33 used in this test is made of a predetermined resin instead of the PEEK resin described in the embodiment. Carbon fiber is mixed in the resin as in the embodiment. After placing the wafer W, the wafer holding member 33 was reciprocated 200,000 times, and the wafer W collided with the lower side wall portion 35 thereof. Thereafter, the depth of wear marks formed on the lower side wall portion 35 was measured using a microscope.

  Subsequently, the same test as the evaluation test 1-1 was performed as the evaluation test 1-2, and the depth of the wear scar formed on the lower side wall portion 35 was measured. In the wafer holding member 33 used in this evaluation test 1-2, a protective film made of DLC is formed in each part similar to the embodiment, but this protective film is not laminated and is a single layer. The thickness is 3 μm.

  Further, a test was performed as the evaluation test 1-3 in the same manner as the evaluation test 1-3, and the depth of each wear mark formed on the lower side wall portion 35 was measured. However, in this evaluation test 1-3, the wafer holding member 33 is composed of the same PEEK as in the embodiment. A protective film 41 is formed on the wafer holding member 33 as in the embodiment, and its thickness is 3 μm, which is the same as in the evaluation test 1-2. The number of reciprocating movements of the wafer holding member 33 was 200,000 times.

  Further, a test was performed as the evaluation test 1-4 in the same manner as the evaluation test 1-2, and the depth of wear marks formed on the lower side wall portion 35 was measured. The number of times the wafer holding member 33 was reciprocated was 10 million times. The thickness of the protective film 41 formed on each part of the wafer holding member 33 is 3 μm, which is the same as in the evaluation test 1-2.

  As the evaluation test 1-5, the test was performed in the same manner as the evaluation test 1-3, and the depth of each wear mark formed on the lower side wall portion 35 was measured. However, in this evaluation test 1-5, the wafer holding member 33 is made of a predetermined resin similar to that in the evaluation test 1-2. As in the evaluation test 1-2, the protective film made of DLC formed on the wafer holding member 33 is a single layer, and the thickness thereof is 8 μm. The number of reciprocating movements of the wafer holding member 33 was 10 million.

As the evaluation test 1-6, the test was performed in the same manner as the evaluation test 1-4. However, the number of reciprocating movements of the wafer holding member 33 was 10 million times, and the measurement site of the wear trace was the back support 34.
As the evaluation test 1-7, the same test as the evaluation test 1-3 was performed. However, the number of reciprocating movements of the wafer holding member 33 was 10 million times, and the measurement site of the wear trace was the back support 34.
As the evaluation test 1-8, the same test as the evaluation test 1-5 was performed. However, the number of reciprocating movements of the wafer holding member 33 was 10 million times, and the measurement site of the wear trace was the back support 34.

  FIG. 19 shows the results of the evaluation tests 1-1 to 1-8. The depth of the largest wear scar is a hatched graph, and the average value of the depth of each wear scar is a graph with a number of points. In each evaluation test. Moreover, the numerical value of a result is shown on each graph, The unit of this numerical value is micrometer. Comparing the results of the evaluation test 1-1 with the results of the evaluation test 1-2, the evaluation test 1-2 has a smaller maximum wear scar depth and a smaller average value of the wear scars. Therefore, it can be seen from the results of these evaluation tests 1-1 and 1-2 that the wear resistance of the lower side wall portion 35 of the wafer holding member 33 is improved by forming a protective film. In the evaluation test 1-4, the number of collisions with the lower side wall 35 of the wafer W is larger than in the evaluation test 1-1. 4 was smaller. This also shows that the wear resistance of the lower side wall portion 35 is improved by forming the protective film 41.

  From the results of the evaluation tests 1-3 and 1-5, even when the thickness of the resin and the protective film constituting the wafer holding member 33 is changed, the wear resistance is higher than that of the evaluation test 1-1. I understand. Moreover, since the average value of the maximum wear scar depth and the depth of the wear scar is suppressed to be relatively small in the evaluation tests 1-6 to 1-8, a protective film can be formed also on the back surface support portion 34. It is considered effective.

(Evaluation test 2)
As evaluation test 2-1, a stock solution of sulfonic acid was dropped onto the wafer holding member 33, and the depth of the formed wear scar (erosion scar) was measured using a microscope. However, the protective film 41 is not formed on the wafer holding member 33, and the wafer holding member 33 made of the predetermined resin used in the evaluation test 1-1 is used instead of the PEEK resin.

  As the evaluation test 2-2, a sulfonic acid stock solution was dropped on the protective film in the same manner as in the evaluation test 2-1 on the wafer holding member 33 having a protective film formed on each part as in the embodiment. The wear scar was measured using a microscope. However, the protective film used in this evaluation test 2-2 is made of DLC with a single layer similarly to the evaluation test 2-2, and its thickness is 1 μm. The wafer holding member 33 is made of a predetermined resin as in the evaluation test 2-1.

As the evaluation test 2-3, the same test as the evaluation test 2-2 was performed. Also in this evaluation test 2-3, the protective film formed on the wafer holding member is a single layer, and the thickness thereof is 3 μm.
As the evaluation test 2-4, the same test as the evaluation test 2-2 was performed. Also in this evaluation test 2-3, the protective film formed on the wafer holding member is a single layer, and the thickness thereof is 6 μm.
As the evaluation test 2-5, the same test as the evaluation test 2-2 was performed using the wafer holding member 33 on which the protective film 41 including the lower layer film 42 and the upper layer film 43 described in the above-described embodiment was formed. It was. The thickness of the lower layer film 42 and the upper layer film 43 is 3 μm, respectively, and the ratio of each element constituting the first protective film is different from the ratio of each element constituting the second protective film.
As the evaluation test 2-6, the same test as the evaluation test 2-2 was performed. Also in this evaluation test 2-3, the protective film formed on the wafer holding member is a single layer, and the thickness thereof is 6 μm.

  As the evaluation test 2-7, the same evaluation test as the evaluation test 2-2 was performed using the wafer holding member 33 made of PEEK. Also in this evaluation test 2-3, the protective film formed on the wafer holding member is a single layer, and the thickness thereof is 3 μm. The ratio of each element constituting the protective film formed on the wafer holding member 33 in this evaluation test 2-7 is the ratio of each element constituting the protective film of the evaluation tests 2-1 to 2-4 and 2-6. Is different.

  As the evaluation test 2-8, the same evaluation test as the evaluation test 2-2 was performed using the wafer holding member 33 made of PEEK. Also in this evaluation test 2-3, the protective film formed on the wafer holding member is a single layer, and the thickness thereof is 3 μm. The ratio of each element constituting the protective film formed on the wafer holding member 33 in this evaluation test 2-8 is the ratio of each element constituting the protective film of the evaluation tests 2-1 to 2-4 and 2-6. The same.

As the evaluation test 2-9, the same evaluation test as the evaluation test 2-2 was performed using the wafer holding member 33 made of polyimide. Also in this evaluation test 2-9, the protective film formed on the wafer holding member is a single layer, and the thickness thereof is 3 μm. The ratio of each element constituting the protective film formed on the wafer holding member 33 in this evaluation test 2-9 is the same as the ratio of each element constituting the protective film of the evaluation test 2-7. Evaluation test 2-10 As the evaluation test, the same evaluation test as the evaluation test 2-2 was performed using the wafer holding member 33 made of polyimide. Also in this evaluation test 2-10, the protective film formed on the wafer holding member is a single layer, and the thickness thereof is 3 μm. The ratio of each element constituting the protective film formed on the wafer holding member 33 in this evaluation test 2-10 is the ratio of each element constituting the protective film 41 of the evaluation tests 2-1 to 2-4 and 2-6. Is the same.

  FIG. 20 shows the results of the evaluation tests 2-1 to 2-10. Like FIG. 19, the depth of the largest wear scar is a hatched graph, and the average value of the depth of each wear scar is a large number. A graph with dots is shown for each evaluation test. Moreover, the numerical value of a result is shown on each graph, The unit of this numerical value is micrometer. With respect to the maximum wear scar depth and the average value of the wear scar, the evaluation test 2-5 in which the laminated protective film 41 is formed is the evaluation test 2-2 to 2-4, 2 in which the single-layer protective film is formed. It was smaller than −6 to 2-10 and evaluation test 2-1 in which no protective film was formed. Therefore, as described in the embodiment, it has been shown that the protective film having a laminated structure is effective for improving the erosion resistance against chemicals.

W Wafer A3 Transfer arm 21 Heating module 3, 5 Wafer transfer part 32 Frame part 33 Wafer holding member 34 Back surface support part 35 Lower vertical wall part 36 Inclined part 40 Base material 41 Protective film 42 Lower layer film 43 Upper layer film 45 Carbon fiber 46 Mold 50 interface arm

Claims (15)

A support member provided with a back surface support portion for supporting the back surface of the substrate;
A position restricting portion that is provided in the supporting member and surrounds a side surface of the substrate supported by the back surface supporting portion and restricts the position of the substrate;
At least one of the back surface support part and the position restriction part includes a base material, a first film covering the base material, and a second film laminated on the first film. And a protective film for preventing general erosion.   The substrate support apparatus according to claim 1, comprising a base body that supports the support member, and a drive mechanism that moves the support member relative to the base body, and is configured as a substrate transport apparatus.   The substrate support apparatus according to claim 1, wherein the support member is a temperature adjustment plate for heating or cooling the substrate. An inclined portion is provided for guiding the substrate onto the back surface support portion by descending from the outside of the support region of the substrate surrounded by the position restriction portion toward the support region, sliding down the peripheral edge portion of the substrate,
The protective film covers at least one of the back surface support portion, the position restriction portion, and the inclined portion instead of covering at least one of the back surface support portion and the position restriction portion. A substrate support apparatus according to any one of claims 1 to 3.   The substrate support device according to claim 1, wherein the base material is made of a resin. The base material holds a large number of fibers so that the tips protrude from the surface of the base material,
The substrate support apparatus according to claim 5, wherein the protective film covers the base material and the fiber to prevent wear of the position restricting portion, the back surface supporting portion, or the inclined portion.   7. The substrate support apparatus according to claim 1, wherein the protective film is made of diamond-like carbon.   The substrate support apparatus according to claim 7, wherein a main component constituting the first film and a main component constituting the second film are different from each other.   9. The substrate support apparatus according to claim 8, wherein fluorine is contained as a main component constituting the first film, and silicon is contained as a main component constituting the second film. A step of supporting the back surface of the substrate by a support member provided with a back surface support portion;
Surrounding the side surface of the substrate supported by the back surface support portion by the position restriction portion provided on the support member, and regulating the position of the substrate;
With
At least one of the back surface support portion and the position restriction portion includes a base material, a first film that covers the base material, and a second film laminated on the first film. A substrate holding method characterized by being coated with a protective film for preventing erosion. Supporting the support member by a substrate;
The substrate supporting method according to claim 10, further comprising a step of moving the supporting member with respect to the base by a driving mechanism and transporting the substrate.   The substrate supporting method according to claim 10, further comprising a step of heating or cooling the substrate by the supporting member. A step of sliding the peripheral edge of the substrate down by an inclined portion that descends toward the support region from the outside of the support region of the substrate surrounded by the position restricting portion, and guiding the substrate onto the back surface support portion;
The protective film covers at least one of the back surface support portion, the position restriction portion, and the inclined portion instead of covering at least one of the back surface support portion and the position restriction portion. The substrate supporting method according to any one of claims 10 to 12.   The substrate support method according to claim 10, wherein the base material is made of a resin. The base material holds a large number of fibers so that the tips protrude from the surface of the base material,
The substrate protection method according to claim 14, wherein the protective film covers the base material and the fiber to prevent wear of the position restricting portion, the back surface supporting portion, or the inclined portion.

Images