JPH10298780A - Formation of coating film on insulating material - Google Patents

Abstract

PROBLEM TO BE SOLVED: To regulate the resistance value of the surface of hard carbon coating film formed on an insulating material so as to prevent the change of static electricity on the surface. SOLUTION: A base film 14 having electric conductivity is formed on the surface of an insulating material 12 as a base material, a hard carbon film 16 is formed on the base film 14, and by changing the resistance value of the base film 14, the surface resistance value of the hard carbon film 16 is regulated. In the case the base film 14 is formed out of a metallic film of titanium, chromium, tungsten or the like, the resistance value is regulated by the film thickness. In the case it is formed by semiconductor film of silicone, germanium or the like, the resistance value can changed by the film thickness or the concn. of impurities.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hard carbon material for an insulating material for forming a hard carbon film on the surface of the insulating material to enhance wear resistance and controlling the surface resistance to a desired value. The present invention relates to a film forming method.

[0002]

2. Description of the Related Art In recent years, a hard carbon film has been formed as a protective film on the surface of a base material such as metal, glass, ceramic, plastic, etc., thereby greatly increasing the wear resistance of the surface and improving the durability. Is being done. The hard carbon film is a hydrogenated amorphous carbon film, which is a black film and has properties very similar to diamond. Therefore, it is called a diamond-like carbon (DLC) film, or is also called an i-carbon film.

[0003] The hard carbon film has excellent characteristics such as high mechanical hardness, low coefficient of friction, good electrical insulation, high thermal conductivity, and high corrosion resistance. For this reason, it has been proposed and has been put to practical use that coating of decorative articles, medical equipment, magnetic heads, tools and the like with a hard carbon film greatly increases their durability.

Further, an LSI (Large Scale Integrated ci
In jigs and tools for handling semiconductor wafers and chips, such as transfer arms for transferring semiconductor wafers and semiconductor chips, in semiconductor device manufacturing equipment such as rcuit), do not contaminate the semiconductor wafers and chips. It has been proposed to use an insulating material such as a ceramic material instead of a metal, and to coat the surface of a jig or tool with the insulating material with a hard carbon film in order to enhance the wear resistance of the surface.

[0005]

However, since the hard carbon film has a high electrical resistivity, covering the surface of the substrate with the hard carbon film results in a very high surface resistance. For this reason, there is a problem that static electricity is easily generated by contact with other members, thereby easily adsorbing dust and dust in the atmosphere on the surface. Also,
When a hard carbon film is formed on the surface of a transfer arm for transferring a semiconductor wafer or semiconductor chip, the following problem occurs in addition to the problem of dust and dust adsorption by static electricity.

For example, when a semiconductor wafer or a semiconductor chip in which a large number of semiconductor integrated circuit elements are integrated is handled, the degree of integration of the semiconductor integrated circuit is increasing. For example, the gate insulating film of a MOS transistor is very thin. Therefore, electrostatic breakdown of the gate insulating film due to static electricity charged on the surface of a jig or tool handling the same is a serious problem.

Here, an example of measurement of the surface resistance value of the hard carbon film is shown in a graph of FIG. In the graph of FIG. 13, the horizontal axis indicates the thickness of the hard carbon film, and the vertical axis indicates the inter-terminal resistance which is the surface resistance. As a sample for measuring the surface resistance value of the hard carbon film, a film thickness of 0.1 μm and 0.4 μm was formed on a borosilicate glass having a plate thickness of 1.1 mm.
Five types of samples having hard carbon films of m, 0.8 μm, 1.2 μm, and 1.5 μm were formed. The measurement result at that time is shown by a curve 36.

A method of measuring the surface resistance will be described with reference to FIG. As shown in FIG. 14, a pair of measuring terminals 22a and 22b are provided on a surface of a sample in which a hard carbon film 16 is formed on a borosilicate glass as a base material 12 at a predetermined interval (1).
mm). Then, this measurement terminal 22
DC power supply 18 and ammeter 20 are connected in series to a and 22b. DC voltage of 50 V from DC power supply 18 is measured at terminal 2
The current value applied between the electrodes 2a and 22b and flowing through the measuring terminals 22a and 22b was measured by the ammeter 20, and the surface resistance of the hard carbon film 16 was calculated by calculation.

The surface resistance of the hard carbon film 16 is shown in FIG.
As shown by the curve 36 of FIG. 3, it is on the order of 10 ¹¹ Ω.
The surface resistance decreases as the thickness of the hard carbon film 16 increases.
It is speculated that this is because the value of the current flowing through the film increases.

As described above, the surface resistance of a hard carbon film formed on the surface of a jig or tool made of an insulator is 10%.
^Since it is a very high value of the order of ¹¹ Ω, static electricity may be charged to adsorb dust and dust, and when handling semiconductor wafers and chips, the static electricity may cause electrostatic breakdown. For this reason, there is a demand for jigs and tools for handling semiconductor wafers and semiconductor chips in which the merits of the hard carbon film cannot be sufficiently exhibited and the surface of the hard carbon film is not charged with static electricity.

Therefore, as disclosed in, for example, JP-A-2-30761, a halogen element or hydrogen and a halogen element are contained in a hard carbon film formed on the surface of a base material of a metal or an insulating material. It has been proposed to control the conductivity of a hard carbon film by providing a distribution of element concentrations in the thickness direction of the film to be deposited. That is, when a hard carbon film is formed by the plasma CVD method, NF ₃ , S
Fluoride such as F ₄ , WF ₆ , chloride such as CCl ₄ , CH ₃ B
adding a bromide or iodide such as r into the plasma;
A halogen element such as F, Cl, Br, or I is added.

[0012] When the halogen element is contained in the hard carbon film as described above, the conductivity of the hard carbon film can be increased and the surface resistance thereof can be reduced. However, characteristics such as hardness are reduced, and wear resistance is reduced. There is a problem that the enhancing effect is impaired. It has also been proposed that a metal such as W or Ni is simultaneously formed by sputtering or the like during formation of the hard carbon film, and a hard carbon film mixed with metal particles is formed to reduce the surface resistance. .

However, also in this method, the characteristics such as hardness are reduced by mixing metal particles into the hard carbon film, and the effect of increasing wear resistance is impaired. In addition, it is difficult to control the process in the film forming process, and the controllability of the surface resistance is poor.

The present invention solves such a problem,
In a method of forming a hard carbon film on an insulating material, a surface resistance value can be controlled so that static electricity is not charged on the surface without reducing the hardness of the hard carbon film. The purpose is to.

[0015]

In order to achieve the above object, a method for forming a film on an insulating material according to the present invention comprises forming a conductive base film on the surface of an insulating material such as glass or ceramic material, A hard carbon film is formed on the base film, and the surface resistance of the hard carbon film is controlled by changing the resistance value of the base film.

It is preferable that a metal film or a semiconductor film is formed as the base film. In the case of a metal film, the resistance value of the base film can be changed by changing its thickness or material. In the case of a semiconductor film, the resistance value of the base film can be changed by changing its thickness, material, or impurity concentration.

Further, as the base film, a first base film of a metal film may be formed on the surface of an insulating material, and a second base film of a semiconductor film may be formed thereon. In this case, the resistance value of the base film can be changed by changing at least one of the thickness of the first base film formed of the metal film and the thickness or the impurity concentration of the second base film formed of the semiconductor film. it can.

The metal film as the base film may be formed of titanium, chromium, tungsten, or a carbide or nitride thereof. Also, the semiconductor film is
It may be formed of either silicon or germanium or a compound of silicon or germanium.

As a base film formed between the insulating material and the hard carbon film, a first base film made of a metal film is formed on the surface of the insulating material, and has a higher conductivity than the metal film. It is more preferable to form a second base film made of a high metal film, and further form a third base film made of a semiconductor film thereon. In this case, the resistance value of the underlayer can be changed mainly by the thickness of the second underlayer.

The first underlayer is formed of one of titanium, chromium and tungsten, the second underlayer is formed of one of gold, copper, indium and aluminum, and the third underlayer is formed of one of gold, copper, indium and aluminum. It is preferable to use silicon or germanium.

According to the present invention, when a hard carbon film is formed on the surface of a jig or tool such as a transfer arm for handling a semiconductor wafer or chip, the wear resistance of the jig or tool made of an insulating material such as ceramic can be improved. To prevent the generation of dust by shaving the surface, and to reduce the surface resistance to prevent electrostatic charge, and to prevent dust from adsorbing and electrostatic breakdown on semiconductor wafers and semiconductor chips to be handled. Can be.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a method for forming a film on an insulating material according to the present invention will be described below with reference to the drawings.
FIG. 1 is a schematic cross-sectional view showing a film configuration formed according to the first embodiment of the present invention.

The coating structure shown in FIG. 1 has a base film 1 on an insulating material 12 which is a base material of various parts or jigs and tools.
4, a hard carbon film 16 is provided. The insulating material 12 is a glass, a ceramic material, a resin (plastic), or the like. A metal film or a semiconductor film is formed as a base film 14 on the surface of the insulating material 12. As a method for forming the base film 14, a film is formed by applying a physical vapor deposition method such as a sputtering method or a vacuum evaporation method, or a chemical vapor deposition method.

Then, a hard carbon film 16 is formed on the base film 14. The hard carbon film 16 is formed by a plasma chemical vapor deposition method using methane (CH4) as a source gas. When a metal film is used as the base film 14, titanium (Ti), chromium (Cr), tungsten (W), or the like can be used. Further, compounds such as carbides and nitrides of these metals can also be applied as the base film 14.

When a semiconductor film is used as the base film 14, silicon (Si) or germanium (Ge) can be used. Further, a compound of silicon or germanium can be used as the base film 14.

The surface resistance of the hard carbon film 16 can be controlled by changing the resistance of the underlayer 14. If the underlying film 14 is a metal film, the resistance value can be changed by changing the type of metal used, the composition of a compound such as carbide or nitride, or the film thickness thereof.

When the underlying film 14 is a semiconductor film, the resistance value can be changed by changing the type of semiconductor used, the thickness of the semiconductor film, or the concentration of impurities introduced into the semiconductor film. Examples of impurities introduced into the semiconductor film include phosphorus (P), boron (B), and arsenic (As).

These impurities are incorporated into the semiconductor film simultaneously with the formation of the film of the semiconductor film. For example, when phosphorus is introduced into a silicon film by applying a chemical vapor deposition method, monosilane (SiH4) and phosphine (PH3), which are silicon source gases, are introduced into a growth chamber. Thus, the surface resistance of the hard carbon film 16 coated with the insulating material 12 can be set to a required value such that static electricity is not charged.

A specific example of the first embodiment will be described with reference to the graph of FIG. The graph shown in FIG.
When glass is used as the insulating material 12 shown in FIG. 1, a silicon film (semiconductor film) of N-type conductivity is formed as a base film 14 on the surface thereof, and a hard carbon film 16 is formed on the upper surface thereof. The surface resistance of the hard carbon film 16 is shown.

The thickness of the hard carbon film is 0.4 μm,
Three types of samples of 1.1 μm and 1.9 μm were prepared, and their inter-terminal resistance values were measured and plotted in FIG. That is, the horizontal axis of FIG. 2 indicates the thickness of the hard carbon film, and the vertical axis indicates the inter-terminal resistance which is the surface resistance value. As for the specific resistance of the silicon film as the base film, the curve 26 is ¹ to 5 Ω · cm ⁻¹ (at this time, the impurity concentration is 9 × 10 ^{14 to} 5 × 10 ¹⁵ atoms / cm ³ ).
The curve 24 is 10 to 20 Ω · cm ⁻¹ (at this time, the impurity concentration is 2.5 × 10 ^{14 to} 5 × 10 ¹⁴ atpoms / cm ³ ).

That is, a hard carbon film was formed on silicon films having different specific resistances, and the surface resistance of the hard carbon film at that time was measured. The measurement of the surface resistance value is the same as the measurement method described with reference to FIG. However, the measurement results in FIG. 2 are obtained by applying a DC voltage of 10 V by the DC power supply 18 in FIG.

As is clear from the curves 24 and 26 shown in FIG. 2, the surface resistance of the hard carbon film can be controlled by the specific resistance of the silicon film as the base film of the hard carbon film. That is, the specific resistance of the silicon film is 1 to 5Ω.
· In the case of the curve 26 which is cm- ¹ and 10 to 20Ω · cm
Comparing with the case of the curve 24 which is ⁻¹ , when the thickness of the hard carbon film 16 is 1.1 μm, 9 × 10 ⁶ Ω and 4 ×
10 ⁶ Ω. Therefore, the surface resistance of the hard carbon film can be controlled by the resistance of the base film. The surface resistance of the hard carbon film in this case is 10 ⁶
Ω, which is much lower than the surface resistance value (on the order of 10 ¹¹ Ω) of the conventional hard carbon film shown in FIG.

Next, a second embodiment of the present invention will be described. FIG. 3 is a schematic sectional view showing the structure of the coating.
The coating structure shown in FIG. 3 is such that a hard carbon film 16 is provided on an insulating material 12 which is a base material of various parts or jigs and tools via a first base film 14a and a second base film 14b. ing. The insulating material 12 is a glass, a ceramic material, a resin (plastic), or the like.

As the first base film 14 a, a metal film made of titanium (Ti), chromium (Cr), tungsten (W), or a compound of these metals such as carbide or nitride is used as the first underlayer 14 a. Form on the surface. As the second base film 14b, a semiconductor film such as silicon (Si) or germanium (Ge) is formed on the first base film 14a. As a method of forming these underlayers 14a and 14b, a physical vapor deposition method such as a sputtering method or a vacuum evaporation method, or a chemical vapor deposition method is applied as in the above-described embodiment.

In the case of the coating structure shown in FIG.
By changing one or both of the resistance value of the base film 14a and the resistance value of the second base film 14b, the surface resistance value of the hard carbon film 16 can be controlled. The resistance value of the first base film 14a can be changed by changing the type of metal forming the metal film, the composition of a compound such as carbide or nitride thereof, or the thickness thereof.

The resistance value of the second base film 14b can be changed by changing the type of semiconductor forming the semiconductor film, the thickness of the semiconductor film, or the concentration of impurities introduced into the semiconductor film. By doing so, the surface resistance of the hard carbon film 16 coated with the insulating material 12 can be set to a required value so that static electricity is not easily charged.

A specific example of the second embodiment will be described with reference to the graph of FIG. The graph shown in FIG.
In the film structure shown in FIG. 3, the base insulating material 12 is glass, and a titanium film is formed on the surface thereof as a first base film 14a.
A silicon film is formed thereon as a second base film 14b, and the inter-terminal resistance is a surface resistance value of the hard carbon film 16 when the hard carbon film 16 is formed on the upper surface of the second base film 14b. Is shown.

Here, the thickness of the hard carbon film is 0.5 μm.
m, 0.9 μm and 1.2 μm were prepared,
The resistance between the terminals was measured and plotted in FIG. Then, only the thickness of the titanium film as the first base film 14a was changed, and the thickness of the silicon film as the second base film 14b was made constant (0.1 μm). Curve 28 is the case where the titanium film is 0.4 μm, and the thickness of the hard carbon film is
The resistance between terminals at 0.5 μm, 0.9 μm, and 1.2 μm is 2.7 × 10 ⁵ Ω, 3.2 × 10 ⁵ Ω, and 9 ×
10 ⁵ Ω.

Curve 30 shows the case where the titanium film is 0.1 μm, and the thickness of the hard carbon film is 0.5 μm, 0.9 μm.
m and 1.2 μm are 4.7 ×
They are 10 ⁵ Ω, 5.2 × 10 ⁵ Ω, and 1.7 × 10 ⁶ Ω.
At this time, phosphorus is introduced as an impurity into the silicon film as the second base film 14b. That is, the second
The silicon film as the base film 14b is formed by a direct current sputtering method using a silicon material having an N-type conductivity type containing phosphorus as a target. Since the specific resistance of the N-type silicon material target is about 100Ω · cm- ¹ ,
The underlying film 14b has a value substantially equal to the specific resistance of the silicon material.

The method of measuring the surface resistance (resistance between terminals) of the hard carbon in this case is the same as the method described above with reference to FIG. However, the measurement results shown in FIG. 4 were obtained by applying a DC voltage of 10 V by the DC power supply 18 in FIG.

As is apparent from the curves 28 and 30 shown in FIG. 4, the thickness of the first underlayer constituting the underlayer,
That is, the surface resistance of the hard carbon film can be controlled by changing the coating resistance. That is, comparing the curve 28 in which the thickness of the titanium film as the first base film is 0.4 μm with the curve 30 in which the thickness is 0.1 μm, the hard carbon film has a thickness of 0.1 μm. 3.2 μm at 9 μm
× 10 ⁵ Ω and 5.2 × 10 ⁵ Ω. These values are lower than the surface resistance of the hard carbon film in the case of the first embodiment shown in FIG.

In this embodiment, the first underlayer 14a is used.
Although only the thickness of the titanium film (metal film), that is, the resistance value, was changed, similar results could be obtained by changing the resistance value of the silicon film (semiconductor film) as the second base film 14b. Have been confirmed by the inventors. In that case, the resistance value of the silicon film can be changed by changing the thickness or the impurity concentration of the silicon film.

Further, both the resistance value of the metal film as the first base film 14a and the resistance value of the semiconductor film as the second base film 14b may be changed. As the insulating material 12, a ceramic material, plastic, or the like may be used in addition to glass.

Next, a third embodiment of the present invention will be described. FIG. 5 is a schematic sectional view showing the structure of the coating.
The film configuration shown in FIG. 5 has a first under film 14a, a second under film 14c, and a third under film 14d on an insulating material 12 which is a base material of various parts, jigs, tools, and the like. Thus, a hard carbon film 16 is provided. The insulating material 12 is a glass, a ceramic material, a resin (plastic), or the like.

As the first underlayer 14a, a metal film made of titanium (Ti), chromium (Cr), tungsten (W), or a compound of these metals such as carbide or nitride is used as the first underlayer 14a. It is formed on the surface of the insulating material 12 to a thickness of 0.1 to 0.2 μm. As the second base film 14c, a film of a metal having higher conductivity than the first base film 14a, such as gold (Au), copper (Cu), indium (In), or aluminum (Al), is used. It is formed on the first underlayer 14a to a thickness of 0.5 to 1.0 μm.

As the third base film 14d, a semiconductor film such as silicon (Si) or germanium (Ge) is formed on the second base film 14c to a thickness of 0.1 to 0.2 μm. As a method for forming the underlayers 14a, 14c, and 14d, a physical vapor deposition method such as a sputtering method or a vacuum vapor deposition method, or a chemical vapor deposition method is applied as in the above-described embodiment.

This embodiment is characterized in that a metal film having high conductivity (small specific resistance) is sandwiched between the base films as the second base film 14c, and a large amount of current is supplied to the second base film. By flowing, lower the resistance value of the entire underlayer,
The surface resistance value of the hard carbon film 16 can be easily reduced. Note that the first base film 14a made of a titanium film, a chromium film, or the like is necessary to increase the adhesion to the insulating material 12 as a base material. The third base film 14d made of a silicon film or a germanium film is It is necessary to improve the adhesion to the hard carbon film 16.

A specific example of the third embodiment will be described with reference to the graph of FIG. The graph shown in FIG.
In the film structure shown in FIG. 5, the base insulating material 12 is glass,
On its surface, a titanium (Ti) film is formed as a first base film 14a, a copper (Cu) film is formed as a second base film 14c, and a silicon (Si) film is formed as a third base film 14d. The hard carbon film 1 is formed on the upper surface of the base film 14d.
6 shows the inter-terminal resistance which is the surface resistance value of the hard carbon film 16 when No. 6 is formed. Here, three types of samples having a hard carbon film thickness of 0.5 μm, 0.9 μm, and 1.2 μm were prepared, and the resistance between the terminals was measured and plotted in FIG.

Then, only the thickness of the Cu film serving as the second base film 14c is changed, and the thickness of the Ti film serving as the first base film 14a is changed.
Each film thickness of the film and the Si film as the third underlayer film 14d is:
Both were constant (0.1 μm). Curve 32 shows the case where the Cu film is 0.6 μm, and the thickness of the hard carbon film is
The resistance between terminals at 0.5 μm, 0.9 μm, and 1.2 μm is 8.0 × 10 ⁴ Ω, 9.0 × 10 ⁴ Ω,
2.2 × 10 ⁵ Ω.

Curve 34 shows the case where the Cu film is 0.3 μm, and the thickness of the hard carbon film is 0.5 μm, 0.9 μm.
m, 1.2 μm, the resistance between terminals is 2.0
× 10 ⁵ Ω, 2.4 × 10 ⁵ Ω, and 6.8 × 10 ⁵ Ω. As is clear from the curves 32 and 34 in the graph of FIG. 6, the surface resistance of the hard carbon film can be easily changed by changing the thickness of the second underlayer 14c constituting the underlayer, that is, the film resistance. Can control.

That is, the curve 32 in which the thickness of the Cu film as the second underlayer is 0.6 μm,
When the thickness of the hard carbon film is 0.9 μm, 9.0 × 10 ⁴ Ω and 2.4 are obtained.
× 10 ⁵ Ω. These values show that the surface resistance (resistance between terminals) of the hard carbon film is further smaller than the measurement result in the case of using the two-layered underlayer shown in FIG.

The surface resistance of the hard carbon film 16 can be controlled mainly by changing the thickness of the second underlayer 14c to change the resistance of the underlayer. Resistance value or third underlayer 14d
May be changed.

As described above, the surface resistance of the hard carbon film 16 formed on the insulating material 12 is affected by the underlying film formed thereunder because the thickness of the hard carbon film 16 is as thin as 2 μm or less. That is, the current flowing on the surface of the hard carbon film 16, that is, between the measurement terminals 22a and 22b shown in FIG. 14, is a combination of the current flowing in the hard carbon film 16 and the current flowing through the hard carbon film and flowing in the base film. Becomes

Therefore, if the resistance of the underlying film is made lower than that of the hard carbon film, the current flowing in the underlying film increases, and as a result, the surface resistance of the hard carbon film can be reduced. That is, it is possible to control the surface resistance value of the hard carbon film by changing the resistance value of the base film formed below the hard carbon film. As a result of the experiment, the surface resistance of the hard carbon film having a small charge on the surface was about 10 ⁵ Ω. Therefore, the resistance value of the base film may be controlled so as to have such a surface resistance value.

Next, an apparatus for carrying out the method for forming a film on an insulating material according to the present invention will be described. First, an apparatus for performing the film forming method of the first embodiment described with reference to FIG. 1 will be described with reference to FIGS.

FIG. 7 is a schematic sectional view of a sputtering apparatus for forming a single-layer base film on the surface of an insulating material. A ground cover 41 is fixed in a vacuum chamber 40 of the sputtering apparatus, and an N-type silicon material 42 for forming a base film as a target material is held on the ground cover 41 via an insulating member (not shown). Then, the insulating material 12 as a base material is arranged so as to face the silicon material 42.

[0057] Then, by the exhaust means (not shown), and exhausted from the exhaust port 40a until the vacuum chamber 40 to 3 × 10- ⁵ torr vacuum degree of about. Thereafter, an argon gas is introduced into the vacuum chamber 40 as a sputtering gas from the gas inlet 40b, and the degree of vacuum is adjusted to about 1 × 10 ⁻³ torr.

At this time, the vacuum chamber 40 and the ground cover 41 are grounded, the switch S1 is closed, and a DC voltage of -600 V is applied from the DC power supply 43 to the silicon material 42.
Is applied. As a result, plasma is generated in the vacuum chamber 40, and the surface of the silicon material 42 is sputtered by argon ions in the plasma. The silicon (Si) molecules hit by the sputter adhere to the surface of the insulating material 12. By performing the sputtering process for about 30 minutes, a silicon film having a thickness of about 0.5 μm can be formed on the surface of the insulating material 12 as the base film 14 shown in FIG.

The film thickness can be arbitrarily adjusted depending on the processing time. Thereby, the resistance value of the silicon film as the base film can be changed. Also, the resistance value of the formed silicon film can be changed by changing the concentration of impurities (phosphorus, boron, arsenic, etc.) in the silicon material 42 used as the target material.

As a base film, a germanium film which is another semiconductor film, or a titanium film, a chromium film which is a metal film,
When a tungsten film or a carbide or nitride film thereof is formed, it can be formed in the same manner by changing the target material held on the ground cover 41 to each of these materials by the above-described sputtering apparatus.

FIG. 8 is a schematic cross-sectional view of a plasma CVD apparatus for forming a hard carbon film on an insulating material on which a base film has been formed as described above. This device is provided with an anode 51 and a filament 52 in an upper part in a vacuum chamber 50 having an exhaust port 50a and a gas inlet port 50b. Then, an insulating material 120 on which a base film is formed is arranged in the vacuum chamber 50 so as to face the anode 51.

The degree of vacuum in the vacuum chamber 50 is 3 × 10
-Exhaust air from the exhaust port 50a until it reaches about ⁵ torr. Thereafter, benzene (C ₆ H ₆ ) as a gas containing carbon is introduced into the vacuum chamber 50 through the gas inlet 50b, and the pressure in the vacuum chamber 50 is adjusted to about 1 × 10 ⁻³ torr.

The vacuum chamber 50 is grounded, and the insulating material 12
A DC power supply 5 is applied to the underlayer 0 (silicon film in the above example).
In addition to applying a DC voltage of 3 kV to 3 kV, applying a DC voltage of +50 V to the anode 51 in the vacuum chamber 50 from the anode power supply 54, and passing a current of 30 A from the filament power supply 55 to the filament 52,
An AC voltage of 10 V is applied.

As a result, the insulating material 12 in the vacuum chamber 50 is
A plasma is generated in a region around 0, and a hard carbon film made of hydrogenated amorphous carbon is formed on the base film of the insulating material 120 by a plasma CVD process. The film thickness can be arbitrarily adjusted according to the processing time.

As described above, the insulating material 12 on which the base film is formed
As a plasma CVD method for forming a hard carbon film on the surface of a vacuum chamber, a vacuum chamber without an anode and a filament is used, and an insulating material 120 disposed in the vacuum chamber is used.
There is also a method of generating plasma by applying high-frequency power to the underlayer described above, or a method of generating plasma only by applying a DC voltage to the underlayer of the insulating material 120.

Next, an apparatus for carrying out the film forming method of the second embodiment described with reference to FIG.
It will be explained by. FIG. 9 is a schematic sectional view of a sputtering apparatus for forming a two-layer base film on the surface of an insulating material.

In the vacuum chamber 40 of this sputtering apparatus, two ground covers 41a and 41b are arranged at intervals. The first ground cover 41a holds a titanium material 44 for forming a first base film as a target material via a not-shown insulating member, and the second ground cover 41b holds a target material via an insulating member. As a material, a silicon material 42 having an N-type conductivity for forming the second base film is held.

Then, the insulating material 12 as the base material is first arranged at a position facing the titanium material 44 as shown by a solid line in FIG. After evacuating the grounded vacuum chamber 40 in the same manner as described above, an argon gas is introduced as a sputtering gas, the switch S1 is closed, and a DC voltage of about −600 V is applied to the titanium material 44 from the DC power supply 43a. Apply.

Thus, the titanium material 4 in the vacuum chamber 40 is
A plasma is generated in a region around 4, and the surface of the titanium material 44 is sputtered by argon ions in the plasma. Titanium (Ti) beaten out by the spatter
Molecules adhere to the surface of the insulating material 12, and the first material shown in FIG.
A titanium film can be formed as the base film 14a. The film thickness can be arbitrarily controlled by the sputtering time.

After that, the switch S1 is opened, and the insulating material 12 on which the first base film has been formed is moved to a position facing the silicon material 42 as a target material as shown by a virtual line in FIG. After moving, the switch S2 is closed and the DC power
A DC voltage of the order is applied to the silicon material 42.

As a result, a sputtering process using the silicon material 44 is performed in the same manner as described above, and a silicon film is formed as the second base film 14b on the first base film 14a of the insulating material 12 shown in FIG. can do. The film thickness can be arbitrarily controlled by the processing time. If the impurity concentration of the silicon material 42 used as the target material is changed, the resistance value according to the impurity concentration of the formed silicon film can be controlled.

When another metal film is formed as the first base film and another semiconductor film is formed as the second base film, they can be formed in the same manner only by changing the respective target materials. . In the example shown in FIG.
Since 3b is provided separately, the voltage applied to the titanium material 41 and the silicon material 42 can be optimized, but a common DC power supply may be used. In that case, it is preferable that the output voltage of the DC power supply can be adjusted.

Thus, the insulating material 12 shown in FIG.
After the first and second underlayers 14a and 14b are formed on the surface of the substrate, the method of forming the hard carbon film 16 on the second underlayer 14b is the same as that of the embodiment described with reference to FIG. Since the process is a plasma CVD process using a similar apparatus, a description thereof will be omitted.

Next, an apparatus for carrying out the film forming method of the third embodiment described with reference to FIG.
0 will be described. FIG. 10 is a schematic cross-sectional view of a sputtering apparatus for forming three underlayers on the surface of an insulating material. Three ground covers 41a, 41b, 41c are arranged at intervals in a vacuum chamber 40 of this sputtering apparatus.

The first ground cover 41a holds a titanium material 44 for forming a first base film as a target material via an insulating member (not shown), and the second ground cover 41b includes an insulating member. A copper material 45 for forming a second base film as a target material is held as a target material, and a conductive type for forming a third base film as a target material as a target material via an insulating member is provided on the third ground cover 41c. Holds the N-type silicon material 42.

Then, the insulating material 12 as the base material is first arranged at a position facing the titanium material 44 as shown by a solid line in FIG. After evacuating the grounded vacuum chamber 40 in the same manner as described above, an argon gas is introduced as a sputtering gas, the switch S1 is closed, and the DC power supply 43a is turned on.
, A DC voltage of about −600 V is applied to the titanium material 44.

As a result, a sputtering process using the titanium material 44 is performed in the same manner as described above, and a titanium film can be formed as the first underlayer 14a shown in FIG. The film thickness can be arbitrarily controlled by the sputtering time.

After that, the switch S1 is opened, and the insulating material 12 on which the first base film is formed is moved by a transporting means (not shown) to a position facing the copper material 45 as a target material as shown by a phantom line in FIG. After moving, switch S
2 is closed, and a DC voltage of about −600 V is applied to the copper material 45 from the DC power supply 43b. Thereby, a sputtering process using the copper material 45 is performed, so that a copper film can be formed as the second base film 14c on the first base film 14a shown in FIG. The film thickness can be arbitrarily controlled by the sputtering time.

Thereafter, the switch S2 is opened, and the first and second switches are opened.
After the insulating material 12 having the base film formed thereon is further moved to a position facing the silicon material 42 as the target material as shown by the imaginary line (right side) in FIG. 10, the switch S3 is closed. And the DC power supply 43c
DC voltage of about -600V from silicon material 42
Is applied.

As a result, a sputtering process using the silicon material 42 similar to that described above is performed, and a silicon film is formed on the second base film 14c of the insulating material 12 shown in FIG. Can be formed.
The film thickness can be arbitrarily controlled by the processing time. If the impurity concentration of the silicon material 42 used as the target material is changed, the resistance value according to the impurity concentration of the formed silicon film can be controlled.

In this example, the DC power supplies 43a, 43b, 4
Since 3c is provided separately, the voltage applied to the titanium material 44, the copper material 45, and the silicon material 42 can be optimized, but a common DC power supply may be used. In that case, it is preferable that the output voltage of the DC power supply can be adjusted.

Thus, the insulating material 12 shown in FIG.
The first, second, and third base films 14a, 14c, 1
The method of forming the hard carbon film 16 on the third base film 14d after the formation of 4d is a plasma CVD process using the same apparatus as that of the above-described embodiment described with reference to FIG. The description is omitted.

Next, an application example of the present invention will be described with reference to FIGS. FIG. 11 is a plan view showing a state where a semiconductor wafer is mounted on a semiconductor wafer transfer arm to which the present invention is applied, and FIG. 12 is a side view thereof.
The transfer arm 60 has a notch 60c formed at the tip, two arms 60a and 60b provided on both sides thereof, and a recess 60d into which the semiconductor wafer 70 is fitted is formed on the upper surface.

The transfer arm 60 is mounted on a transfer device (not shown) and moved, and the semiconductor wafer 70 is fitted into the concave portion 60d and transferred between the processing steps. This transfer arm 6
The base material of No. 0 is a ceramic material which is an insulating material, a base film according to any of the above-described embodiments is formed on the surface thereof, and a hard carbon film is formed on the surface.

Therefore, there is no danger of contaminating the semiconductor wafer as in the case of the transfer arm of the metal material. Since the surface is covered with the hard carbon film, the wear resistance is extremely high.
There is no possibility that the surface is shaved by the sliding contact with the semiconductor wafer to generate fine powder. In addition, since the surface resistance of the hard carbon film is reduced to the order of 10 ⁵ Ω by the conductive base film, static electricity is charged and dust in the atmosphere is adsorbed or the semiconductor wafer is formed. There is no danger of destroying the integrated circuit.

The present invention is applicable to all parts, jigs and tools using an insulating material as a base material, which are required to have extremely high surface wear resistance and not so high surface resistance. However, it is extremely effective when applied to jigs and tools for handling semiconductor wafers and semiconductor chips as described above.

Examples of jigs and tools for handling semiconductor wafers and semiconductor chips include a wafer cassette for holding a large number of semiconductor wafers at intervals when performing various processes on semiconductor wafers, in addition to the above-mentioned carrier ham. There are a wafer stage on which a semiconductor wafer is placed, a vacuum suction device for sucking and transporting semiconductor chips and the like, and tweezers for sandwiching and taking out.

The wafer stage is used when a photosensitive resin is applied to a semiconductor wafer by spin coating (spin coating), when the photosensitive resin is exposed using a photomask, or when impurity ions are implanted. It is used for mounting a semiconductor wafer at the time of dry etching. In addition, the present invention may be applied to a guide portion that slides on a semiconductor wafer or chip in an apparatus or equipment that handles a semiconductor wafer or chip. The insulating material serving as the base material is not limited to the ceramic material, but may be glass or plastic.

[0089]

As described above, according to the method for forming a film on an insulating material according to the present invention, the surface hardness is increased by forming a hard carbon film on the surface of the insulating material, and the wear resistance is improved. By forming a conductive underlying film, the surface resistance of the hard carbon film can be controlled, and the surface resistance can be reduced. It is possible to eliminate the danger of adsorbing dust in the atmosphere and damaging the contacting members. In particular, if the present invention is applied to jigs and tools for handling semiconductor wafers and chips,
It is possible to reliably prevent an integrated circuit built in a semiconductor wafer or a semiconductor chip being handled from being damaged by electrostatic charge.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing a film configuration formed according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a measurement example of a surface resistance value of a hard carbon film thickness by a film configuration formed according to the first embodiment.

FIG. 3 is a schematic cross-sectional view illustrating a film configuration formed according to a second embodiment of the present invention.

FIG. 4 is a diagram showing a measurement example of a surface resistance value of a hard carbon film thickness by a film configuration formed according to the second embodiment.

FIG. 5 is a schematic cross-sectional view showing a film configuration formed according to a third embodiment of the present invention.

FIG. 6 is a diagram showing a measurement example of a surface resistance value of a hard carbon film thickness by a film configuration formed according to the third embodiment.

FIG. 7 is a schematic sectional view of a sputtering apparatus for forming a single-layer base film on the surface of an insulating material according to the present invention.

FIG. 8 is a schematic cross-sectional view of a plasma CVD apparatus for forming a hard carbon film on an insulating material on which a base film has been formed according to the present invention.

FIG. 9 is a schematic cross-sectional view of a sputtering apparatus for forming a two-layer base film on the surface of an insulating material according to the present invention.

FIG. 10 is a schematic cross-sectional view of a sputtering apparatus for forming three underlayers on the surface of an insulating material according to the present invention.

FIG. 11 is a plan view showing a state where a semiconductor wafer is mounted on a semiconductor wafer transfer arm to which the present invention is applied.

FIG. 12 is a side view of the same.

FIG. 13 is a diagram showing a measurement example of a surface resistance value of a conventional hard carbon film formed on a surface of an insulating material.

FIG. 14 is a view for explaining a method of measuring the surface resistance value of the hard carbon film.

[Explanation of symbols]

 12: base material 14: base film 14a: first base film 14b, 14c: second base film 14d: third base film 16: hard carbon film 40, 50: vacuum chamber 42: silicon material 43, 53: DC power supply 43a, 43b, 43c: DC power supply 41, 41a, 41b, 41c: Ground cover 44: Titanium material 45: Copper material 51: Anode 52: Filament 54: Anode power supply 55: Filament power supply 120: Form a base film on the surface Insulator

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 21/68 H01L 21/68 N (72) Inventor Takashi Toida 840 Takeno, Taketomi, Tokorozawa-shi, Saitama Citizen Watch Stock In company Tokorozawa office

Claims (17)

[Claims] An underlayer having conductivity is formed on the surface of an insulating material, a hard carbon film is formed on the underlayer, and the surface resistance of the hard carbon film is changed by changing the resistance of the underlayer. A method for forming a film on an insulating material, characterized in that the film thickness is controlled. 2. The method according to claim 1, wherein a metal film is formed as the base film. 3. The method for forming a film on an insulating material according to claim 1, wherein a semiconductor film is formed as said base film. 4. The semiconductor device according to claim 1, wherein a first underlayer made of a metal film is formed on the surface of the insulating material, and a second underlayer made of a semiconductor film is formed on the first underlayer. A method for forming a film on an insulating material according to the above. 5. The method for forming a film on an insulating material according to claim 2, wherein the resistance value of said base film is changed according to the thickness of said metal film. 6. The method for forming a film on an insulating material according to claim 3, wherein a resistance value of said base film is changed according to a film thickness of said semiconductor film. 7. The method for forming a film on an insulating material according to claim 3, wherein a resistance value of said base film is changed according to an impurity concentration of said semiconductor film. 8. The method according to claim 1, wherein at least one of the thickness of the first underlayer made of the metal film and the second underlayer made of the semiconductor film is changed to change the resistance value of the underlayer. The method for forming a film on an insulating material according to claim 4. 9. The method according to claim 1, wherein at least one of a thickness of the first underlayer made of the metal film and an impurity concentration of the second underlayer made of the semiconductor film is changed to change the resistance value of the underlayer. The method for forming a film on an insulating material according to claim 4. 10. A film formation on an insulating material according to claim 2, wherein said metal film as said base film is formed of one of titanium, chromium, and tungsten, or a carbide or nitride thereof. Method. 11. The method for forming a film on an insulating material according to claim 3, wherein the semiconductor film as the base film is formed of one of silicon, germanium, and a compound of silicon or germanium. 12. The semiconductor device according to claim 1, wherein the first underlayer made of the metal film is formed of one of titanium, chromium, and tungsten, and the second underlayer made of the semiconductor film is formed of silicon or germanium. The method for forming a film on an insulating material according to any one of claims 4, 8, and 9. 13. A first base film made of a metal film is formed on the surface of the insulating material as the base film, and a second base film made of a metal film having higher conductivity than the metal film is formed thereon. 2. The method according to claim 1, further comprising forming a third underlayer made of a semiconductor film thereon. 14. The method for forming a film on an insulating material according to claim 13, wherein the resistance value of said base film is changed mainly by the thickness of said second base film. 15. The method according to claim 15, wherein the first underlayer is formed of one of titanium, chromium, and tungsten, and the second underlayer is formed of one of gold, copper, indium, and aluminum. 15. The method for forming a film on an insulating material according to claim 13, wherein the base film is formed of silicon or germanium. 16. The method for forming a film on an insulating material according to claim 1, wherein the insulating material is formed of glass or a ceramic material. 17. The method for forming a film on an insulating material according to claim 1, wherein the insulating material is a jig or a tool for handling a semiconductor wafer or chip.