JP2010213115A

JP2010213115A - Magneto-coupling type isolator

Info

Publication number: JP2010213115A
Application number: JP2009058626A
Authority: JP
Inventors: Yosuke Ide; 洋介井出; Masaji Saito; 正路斎藤; Akira Takahashi; 高橋　　彰; Yoshihiro Nishiyama; 義弘西山; Hidekazu Kobayashi; 秀和小林
Original assignee: Alps Electric Co Ltd
Current assignee: Alps Alpine Co Ltd
Priority date: 2009-03-11
Filing date: 2009-03-11
Publication date: 2010-09-24

Abstract

PROBLEM TO BE SOLVED: To provide a magneto-coupling type isolator particularly improving responsibility at a high speed. SOLUTION: A plurality of elongate parts 59 having a length of L1 in an X1-X2 direction, which is longer than a width of T1 in a Y1-Y2 direction, are arranged at intervals in the Y1-Y2 direction in a plan view in magnetic detecting elements R1 to R4, and both side ends of each elongate part 59 are alternately connected in meandering shapes. The magnetizing direction (the P direction) of fixed magnetic layers configuring the magnetic detecting elements R1 to R4 is directed in the plan view direction C of an external magnetic field working from a plane coil. When an angle of inclination from the plan view direction C of the external magnetic field is set at θ, the angle of inclination θ in the longitudinal direction of the slender 59 is specified in a range from 72 to 108°. COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、磁界発生部と磁気検出素子とを備えて構成される磁気結合型アイソレータに関する。 The present invention relates to a magnetically coupled isolator configured to include a magnetic field generation unit and a magnetic detection element.

下記特許文献には磁気結合型アイソレータに関する発明が開示されている。磁気結合型アイソレータは、入力信号を、磁気に変換するための磁界発生部と、前記磁界発生部から生じた外部磁界を検出して電気信号に変換するための磁気検出素子とを有して構成される。そして、その電気信号を信号処理回路を介して出力側に伝送して出力を取り出す。 The following patent documents disclose inventions related to magnetically coupled isolators. The magnetically coupled isolator includes a magnetic field generation unit for converting an input signal into magnetism, and a magnetic detection element for detecting an external magnetic field generated from the magnetic field generation unit and converting it into an electric signal. Is done. Then, the electric signal is transmitted to the output side via the signal processing circuit to take out the output.

磁気検出素子としては、ホール素子、ＡＭＲ素子（異方性磁気検出素子）、あるいは、ＧＭＲ素子（巨大磁気検出素子）が使用される。 As the magnetic detection element, a Hall element, an AMR element (anisotropic magnetic detection element), or a GMR element (giant magnetic detection element) is used.

特表２００３−５２６０８３号公報Japanese translation of PCT publication No. 2003-526083

図９は、従来における磁気結合型アイソレータの部分平面図、図１０（ａ）は、磁気検出素子の拡大平面図、図１０（ｂ）は、磁気検出素子を構成する固定磁性層やフリー磁性層の磁化方向等を示す概念図、である。なお図９では、絶縁層は図示していない。また平面コイル１００は、その内縁と外縁のみを図示し、コイル１００の真下に配置される４つの磁気検出素子１０１〜１０４を透視して示している。 9 is a partial plan view of a conventional magnetically coupled isolator, FIG. 10A is an enlarged plan view of a magnetic detection element, and FIG. 10B is a fixed magnetic layer or a free magnetic layer constituting the magnetic detection element. It is a conceptual diagram which shows the magnetization direction etc. of FIG. In FIG. 9, the insulating layer is not shown. The planar coil 100 shows only the inner and outer edges of the planar coil 100, and shows through the four magnetic detection elements 101 to 104 arranged just below the coil 100.

コイル１００は平面内にて巻回形成され、Ｘ１−Ｘ２方向に平行に延びる磁界発生部１０５，１０６を備える。図９に示す平面視にて、磁界発生部１０５，１０６から発生する外部磁界は、Ｘ１−Ｘ２方向に直交するＹ１−Ｙ２方向を向いている。図１０（ｂ）に示す符号Ｂが、前記外部磁界の平面視方向を示している。 The coil 100 includes magnetic field generators 105 and 106 that are wound in a plane and extend parallel to the X1-X2 direction. In the plan view shown in FIG. 9, the external magnetic field generated from the magnetic field generators 105 and 106 is directed in the Y1-Y2 direction orthogonal to the X1-X2 direction. A symbol B shown in FIG. 10B indicates a planar view direction of the external magnetic field.

図１０（ａ）に示すように、磁気検出素子１０１〜１０４は、複数本の細長部１０７がＸ１−Ｘ２方向に間隔を空けて配置され、細長部１０７のＹ１−Ｙ２方向を向く両側端部間が互い違いに連結されてミアンダ形状に形成されている。 As shown in FIG. 10A, the magnetic detection elements 101 to 104 have a plurality of elongated portions 107 arranged at intervals in the X1-X2 direction, and both end portions of the elongated portion 107 facing the Y1-Y2 direction. The gaps are alternately connected to form a meander shape.

したがって、図１０（ａ）に示すように、磁気検出素子１０１〜１０４を構成する各細長部１０７の長手方向は、外部磁界Ｈの平面視方向Ｂを向いている。 Therefore, as shown in FIG. 10A, the longitudinal direction of each elongated portion 107 constituting the magnetic detection elements 101 to 104 is directed to the planar view direction B of the external magnetic field H.

磁気検出素子１０１〜１０４はＧＭＲ素子（巨大磁気抵抗効果素子）で形成されており、磁気検出素子１０１〜１０４を構成する固定磁性層の磁化方向（Ｐ方向）が、図１０（ｂ）に示すように、平面コイル１００の磁界発生部１０５，１０６から発生する外部磁界の平面視方向Ｂと平行な方向に向けられる。また、無磁場状態でのフリー磁性層の磁化方向は、形状磁気異方性により、固定磁性層の磁化方向（Ｐ方向）と同じく外部磁界の平面視方向Ｂと平行な方向に向けられる。ここで、固定磁性層とフリー磁性層との間で生じる層間結合磁界によりフリー磁性層の磁化方向（Ｆ方向）は、固定磁性層の磁化方向（Ｐ方向）と同じ方向か、あるいは反対方向を向く。 The magnetic detection elements 101 to 104 are formed by GMR elements (giant magnetoresistive effect elements), and the magnetization direction (P direction) of the fixed magnetic layer constituting the magnetic detection elements 101 to 104 is shown in FIG. As described above, the external magnetic field generated from the magnetic field generators 105 and 106 of the planar coil 100 is directed in a direction parallel to the planar view direction B. Further, the magnetization direction of the free magnetic layer in the absence of a magnetic field is oriented in a direction parallel to the planar view direction B of the external magnetic field in the same manner as the magnetization direction (P direction) of the pinned magnetic layer due to shape magnetic anisotropy. Here, the magnetization direction (F direction) of the free magnetic layer is the same as or opposite to the magnetization direction (P direction) of the pinned magnetic layer due to the interlayer coupling magnetic field generated between the pinned magnetic layer and the free magnetic layer. Turn to.

図１１は、従来における磁気検出素子１０１〜１０４のＲ−Ｈ波形図を示す。磁気検出素子１０１〜１０４は、平面コイル１００の磁界発生部１０５，１０６から発生する外部磁界に対して、図１１に示すようにヒステリシスを持ってしまう。これは、フリー磁性層の磁化反転は磁壁移動が支配的であるためである。 FIG. 11 shows an RH waveform diagram of the conventional magnetic detection elements 101 to 104. The magnetic detection elements 101 to 104 have hysteresis as shown in FIG. 11 with respect to the external magnetic field generated from the magnetic field generators 105 and 106 of the planar coil 100. This is because the domain wall motion is dominant in the magnetization reversal of the free magnetic layer.

このように磁気検出素子１０１〜１０４の電気抵抗変化が平面コイル１００からの外部磁界に対してヒステリシスを持つため、外部磁界に対するリニア特性が悪く、高速磁化スイッチングに不利となり、高速応答性を低下させる問題が生じた。 As described above, since the change in the electric resistance of the magnetic detection elements 101 to 104 has hysteresis with respect to the external magnetic field from the planar coil 100, the linear characteristic with respect to the external magnetic field is poor, which is disadvantageous for high-speed magnetization switching and reduces high-speed response. There was a problem.

特許文献１のＦｉｇ．６には、磁気検出素子を全体的にやや傾けた図が示されている。特許文献１の記述からすると、特許文献１では、図１０に示す磁気検出素子１０１〜１０４の細長部１０７を、平面コイル１００から発生する外部磁界の平面視方向Ｂから０°〜１５°の範囲内で傾けている。 FIG. 6 shows a diagram in which the magnetic detection element is slightly inclined as a whole. According to the description in Patent Document 1, in Patent Document 1, the elongated portions 107 of the magnetic detection elements 101 to 104 shown in FIG. 10 are in the range of 0 ° to 15 ° from the planar view direction B of the external magnetic field generated from the planar coil 100. Tilt inside.

しかしながら、傾き角度を０°〜１５°としても依然として、図１１と同様にＲ−Ｈ波形に大きなヒステリシスを持ち（後述する実験では、フリー磁性層の保磁力Ｈｃが大きいことで証明されている）、高速応答性を十分に改善することが出来ない。 However, even when the tilt angle is 0 ° to 15 °, it still has a large hysteresis in the RH waveform as in FIG. 11 (in the experiment described later, it is proved that the coercive force Hc of the free magnetic layer is large). The high-speed response cannot be improved sufficiently.

そこで本発明は上記従来課題を解決するためのものであり、特に、高速応答性を向上させることが可能な磁気結合型アイソレータを提供することを目的としている。 Therefore, the present invention is to solve the above-described conventional problems, and in particular, an object of the present invention is to provide a magnetically coupled isolator capable of improving high-speed response.

本発明における磁気結合型アイソレータは、平面内にて巻回形成され、入力信号により外部磁界を発生させるための平面コイルと、前記平面コイルと電気的に絶縁されるとともに磁気的結合が可能な位置に配置され、前記外部磁界を検出して電気信号に変換するための磁気検出素子と、を有し、
前記平面コイルは、前記平面内のＸ１−Ｘ２方向に平行に延びる磁界発生部を備え、
前記磁気検出素子は、高さ方向へ平行に切断した断面において、磁化方向が一方向に固定された固定磁性層と、前記固定磁性層に非磁性層を介して形成され前記外部磁界により磁化方向が変動するフリー磁性層とを有する積層部分を備えるとともに、平面視にて、前記平面内の一方向への幅寸法がＴ１、前記平面内にて前記一方向に対し直交する方向への長さ寸法がＬ１で形成され、前記長さ寸法Ｌ１が前記幅寸法Ｔ１よりも長く形成された細長部が前記一方向に間隔を空けて複数配置され、各細長部の両側端部間が互い違いに連結されたミアンダ形状で形成されており、
前記固定磁性層の磁化方向は、前記磁界発生部から作用する前記外部磁界の平面視方向を向いており、
前記外部磁界の平面視方向からの前記平面内への傾き角度をθとしたとき、前記細長部の長手方向の傾き角度θは、７２°〜１０８°の範囲内に規定されることを特徴とするものである。 The magnetically coupled isolator according to the present invention is formed by winding in a plane, and a plane coil for generating an external magnetic field by an input signal, and a position that is electrically insulated from the plane coil and can be magnetically coupled. And a magnetic detection element for detecting the external magnetic field and converting it to an electrical signal,
The planar coil includes a magnetic field generator extending parallel to the X1-X2 direction in the plane,
The magnetic sensing element is formed of a pinned magnetic layer whose magnetization direction is fixed in one direction in a cross section cut parallel to the height direction, and a magnetization direction by the external magnetic field formed on the pinned magnetic layer via a nonmagnetic layer. And a laminating portion having a free magnetic layer that fluctuates, and in a plan view, the width dimension in one direction in the plane is T1, and the length in the direction orthogonal to the one direction in the plane is A plurality of elongated portions each having a dimension L1 and having the length dimension L1 longer than the width dimension T1 are arranged at intervals in the one direction, and the end portions on both sides of each elongated portion are alternately connected. Formed with a meander shape,
The magnetization direction of the pinned magnetic layer is oriented in a plan view direction of the external magnetic field acting from the magnetic field generation unit,
The inclination angle θ in the longitudinal direction of the elongated portion is defined within a range of 72 ° to 108 °, where θ is the inclination angle into the plane from the planar view direction of the external magnetic field. To do.

上記の構成により、フリー磁性層の磁化反転はスピン回転が支配的になり、Ｒ−Ｈ波形上でのヒステリシスが小さくなり、外部磁界に対するリニア特性を向上できる。よって、高速応答性を向上させることができる。 With the above configuration, the spin reversal is dominant in the magnetization reversal of the free magnetic layer, the hysteresis on the RH waveform is reduced, and the linear characteristic against the external magnetic field can be improved. Therefore, high-speed response can be improved.

本発明では、前記細長部の長手方向の傾き角度θは、８５°〜９５°の範囲内に規定されることが好ましい。また、前記細長部の長手方向の傾き角度θは、略９０°であり、前記細長部の長手方向が、前記Ｘ１−Ｘ２方向に略平行に向けられていることがより好ましい。これにより、Ｒ−Ｈ波形上でのヒステリシスをほぼ無くすことができ、高速応答性をより効果的に向上させることができる。 In the present invention, the inclination angle θ in the longitudinal direction of the elongated portion is preferably defined within a range of 85 ° to 95 °. Further, the inclination angle θ in the longitudinal direction of the elongated portion is approximately 90 °, and it is more preferable that the longitudinal direction of the elongated portion is directed substantially parallel to the X1-X2 direction. Thereby, the hysteresis on the RH waveform can be almost eliminated, and the high-speed response can be improved more effectively.

また本発明では、前記磁気検出素子が複数設けられてブリッジ回路を構成しており、
前記固定磁性層の磁化方向と、前記フリー磁性層の磁化方向とが無磁場状態にて直交状態にあることが好ましい。 In the present invention, a plurality of the magnetic detection elements are provided to constitute a bridge circuit,
It is preferable that the magnetization direction of the pinned magnetic layer and the magnetization direction of the free magnetic layer are orthogonal to each other in the absence of a magnetic field.

上記のように、無磁場状態にて固定磁性層の磁化方向とフリー磁性層の磁化方向とが直交状態にあると、無磁場状態での磁気検出素子の電気抵抗値をほぼ中間値Ｒｃ（最大値Ｒｍａｘと最小値間Ｒｍｉｎの真ん中の値）にできるため、ブリッジ回路の電位を無磁場状態にて中点電位に合わせやすく、信号伝送の信頼性を向上させることができる。 As described above, when the magnetization direction of the pinned magnetic layer and the magnetization direction of the free magnetic layer are perpendicular to each other in the absence of a magnetic field, the electric resistance value of the magnetic detection element in the absence of a magnetic field is approximately the intermediate value Rc (maximum). (The middle value between the value Rmax and the minimum value Rmin), it is easy to match the potential of the bridge circuit to the midpoint potential in the absence of a magnetic field, and the signal transmission reliability can be improved.

本発明の磁気結合型アイソレータによれば、高速応答性を向上させることができる。 According to the magnetically coupled isolator of the present invention, high-speed response can be improved.

本実施形態の磁気結合型アイソレータ（磁気カプラ）の全体の回路構成図、FIG. 2 is an overall circuit configuration diagram of a magnetically coupled isolator (magnetic coupler) according to the present embodiment; 磁気検出素子Ｒ１〜Ｒ４にて構成されるブリッジ回路図、Bridge circuit diagram composed of magnetic detection elements R1 to R4, 本実施形態における磁気結合型アイソレータの部分平面図、The partial top view of the magnetic coupling type isolator in this embodiment, 図３に示すＡ−Ａ線に沿って厚さ方向に切断し矢印方向から見た部分断面図、FIG. 3 is a partial sectional view taken along the line AA shown in FIG. 本実施形態の磁気検出素子の拡大縦断面図、An enlarged longitudinal sectional view of the magnetic detection element of the present embodiment, （ａ）は本実施形態の磁気検出素子の拡大平面図、（ｂ）は、固定磁性層及びフリー磁性層の磁化方向、外部磁界の平面視方向、さらには外部磁界の平面視方向からの細長部の長手方向の傾き角度θを示す概念図、(A) is an enlarged plan view of the magnetic detection element of the present embodiment, (b) is an elongated direction from the magnetization direction of the fixed magnetic layer and the free magnetic layer, the planar view direction of the external magnetic field, and further the planar view direction of the external magnetic field. A conceptual diagram showing the inclination angle θ in the longitudinal direction of the part, 本実施形態における磁気検出素子のＲ−Ｈ波形図、RH waveform diagram of the magnetic detection element in the present embodiment, 細長部の長手方向の傾き角度θと、フリー磁性層の保磁力とを関係を示すグラフであり（ｂ）は（ａ）の一部を拡大したグラフ、It is a graph showing the relationship between the inclination angle θ in the longitudinal direction of the elongated portion and the coercivity of the free magnetic layer, (b) is a graph in which a part of (a) is enlarged, 従来における磁気結合型アイソレータの部分平面図、Partial plan view of a conventional magnetically coupled isolator, （ａ）は従来例の磁気検出素子の拡大平面図、（ｂ）は、固定磁性層及びフリー磁性層の磁化方向、外部磁界の平面視方向を示す概念図、(A) is an enlarged plan view of a conventional magnetic detection element, (b) is a conceptual diagram showing the magnetization direction of the fixed magnetic layer and the free magnetic layer, and the planar view direction of the external magnetic field, 従来における磁気検出素子のＲ−Ｈ波形図、RH waveform diagram of a conventional magnetic detection element,

図１は、本実施形態の磁気結合型アイソレータ（磁気カプラ）の全体の回路構成図、図２は、磁気検出素子Ｒ１〜Ｒ４にて構成されるブリッジ回路図、図３は本実施形態における磁気結合型アイソレータの部分平面図、図４は、図３に示すＡ−Ａ線に沿って厚さ方向に切断し矢印方向から見た部分断面図、図５は、本実施形態の磁気検出素子の拡大縦断面図、図６（ａ）は、本実施形態における磁気検出素子の拡大平面図、（ｂ）は、磁気検出素子を構成する固定磁性層及びフリー磁性層の磁化方向、平面コイルから磁気検出素子に作用する外部磁界の平面視方向、さらには、前記外部磁界の平面視方向からの磁気検出素子の細長部の傾き角度θを示す概念図、である。 1 is an overall circuit configuration diagram of a magnetically coupled isolator (magnetic coupler) according to the present embodiment, FIG. 2 is a bridge circuit diagram including magnetic detection elements R1 to R4, and FIG. 3 is a magnetic circuit according to the present embodiment. 4 is a partial plan view of the coupled isolator, FIG. 4 is a partial cross-sectional view taken along the line AA shown in FIG. 3 and viewed from the direction of the arrow, and FIG. 5 is a diagram of the magnetic sensing element of the present embodiment. FIG. 6A is an enlarged longitudinal sectional view, FIG. 6A is an enlarged plan view of the magnetic detection element in the present embodiment, and FIG. 6B is a magnetization direction of the fixed magnetic layer and the free magnetic layer constituting the magnetic detection element, and the magnetic force from the planar coil. FIG. 4 is a conceptual diagram showing a plan view direction of an external magnetic field acting on a detection element, and further an inclination angle θ of an elongated portion of the magnetic detection element from the plan view direction of the external magnetic field.

なお図３では、絶縁層を図示せず、また平面コイル２の内縁及び外縁のみを示し、平面コイル２下に位置する磁気検出素子Ｒ１〜Ｒ４を透視して示した。 In FIG. 3, the insulating layer is not shown, only the inner and outer edges of the planar coil 2 are shown, and the magnetic detection elements R1 to R4 positioned below the planar coil 2 are shown through.

図１に示すように磁気結合型アイソレータ１は、平面コイル２と、磁気検出素子Ｒ１〜Ｒ４とを有して構成される。平面コイル２と各磁気検出素子Ｒ１〜Ｒ４は絶縁層を介して電気的に絶縁されているが、磁気的結合が可能な間隔を空けて配置される。 As shown in FIG. 1, the magnetically coupled isolator 1 includes a planar coil 2 and magnetic detection elements R1 to R4. The planar coil 2 and each of the magnetic detection elements R1 to R4 are electrically insulated via an insulating layer, but are arranged with an interval that allows magnetic coupling.

平面コイル２は図３のように、Ｘ１−Ｘ２方向に帯状に延びる第１磁界発生部３と第２磁界発生部４を有する。第１磁界発生部３と第２磁界発生部４は図示Ｙ１−Ｙ２方向に間隔を空けて対向している。第１磁界発生部３と第２磁界発生部４は連結部１７，１８を介して連結されている。連結部１７，１８は、湾曲状となっているが形態を限定するものではない。第１磁界発生部３、第２磁界発生部４、及び連結部１７，１８に囲まれて空間部１９が形成されている。 As shown in FIG. 3, the planar coil 2 includes a first magnetic field generation unit 3 and a second magnetic field generation unit 4 that extend in a strip shape in the X1-X2 direction. The first magnetic field generator 3 and the second magnetic field generator 4 are opposed to each other with an interval in the Y1-Y2 direction shown in the drawing. The first magnetic field generating unit 3 and the second magnetic field generating unit 4 are connected via connecting parts 17 and 18. Although the connection parts 17 and 18 are curving, it does not limit a form. A space 19 is formed by being surrounded by the first magnetic field generator 3, the second magnetic field generator 4, and the connecting portions 17 and 18.

図４に示すように平面コイル２は、幅寸法Ｔ３で形成されたコイル片６が所定の間隔Ｔ２を空けて、複数回、平面内にて巻回形成された形状である。よって、図４に示すように、第１磁界発生部３及び第２磁界発生部４は、複数本のＸ１−Ｘ２方向に延びるコイル片６がＹ１−Ｙ２方向に並設された構成となっている。 As shown in FIG. 4, the planar coil 2 has a shape in which a coil piece 6 formed with a width dimension T3 is wound a plurality of times in a plane with a predetermined interval T2. Therefore, as shown in FIG. 4, the first magnetic field generating unit 3 and the second magnetic field generating unit 4 have a configuration in which a plurality of coil pieces 6 extending in the X1-X2 direction are arranged in parallel in the Y1-Y2 direction. Yes.

平面コイル２に接続される２つの電極パッド５，９が設けられている。電極パッド５，９は円形状であるが特に形状を限定するものではない。さらに平面コイル２は電極パッド５，９を介して図１に示すように送信回路７に接続されている。送信回路７から入力信号に基づく電流が流れると、平面コイル２から外部磁界が発生する。図４に示すように第１磁界発生部３を構成するコイル片６、及び第２磁界発生部４を構成するコイル片６では電流の流れる向きが逆である。よって、第１磁界発生部３を構成するコイル片６により発生する外部磁界Ｈ１と、第２磁界発生部４を構成するコイル片６により発生する外部磁界Ｈ２は逆向きである。図３、図４に示すように第１磁界発生部３の真下（真上でもよい）、及び第２磁界発生部の真下（真上でもよい）には、夫々磁気検出素子Ｒ１〜Ｒ４が絶縁層８を介して対向配置されている。そして、第１磁界発生部３と対向配置された第１磁気検出素子Ｒ１及び第４磁気検出素子Ｒ４に第１磁界発生部３より作用する外部磁界Ｈ１と、第２磁界発生部４と対向配置された第２磁気検出素子Ｒ２及び第３磁気検出素子Ｒ３に前記第２磁界発生部４より作用する外部磁界Ｈ２は反平行となる。なお、磁気検出素子Ｒ１〜Ｒ４の形成位置は、磁界発生部３，４の真上、真下以外の位置であってもよい。 Two electrode pads 5 and 9 connected to the planar coil 2 are provided. The electrode pads 5 and 9 are circular, but the shape is not particularly limited. Further, the planar coil 2 is connected to the transmission circuit 7 through the electrode pads 5 and 9 as shown in FIG. When a current based on an input signal flows from the transmission circuit 7, an external magnetic field is generated from the planar coil 2. As shown in FIG. 4, the direction of current flow is reversed in the coil piece 6 constituting the first magnetic field generation unit 3 and the coil piece 6 constituting the second magnetic field generation unit 4. Therefore, the external magnetic field H1 generated by the coil piece 6 constituting the first magnetic field generation unit 3 and the external magnetic field H2 generated by the coil piece 6 constituting the second magnetic field generation unit 4 are opposite to each other. As shown in FIGS. 3 and 4, the magnetic detection elements R 1 to R 4 are insulated immediately below the first magnetic field generator 3 (may be directly above) and directly below the second magnetic field generator (may be directly above). Opposing to each other via the layer 8. Then, the external magnetic field H1 acting from the first magnetic field generation unit 3 on the first magnetic detection element R1 and the fourth magnetic detection element R4 disposed to face the first magnetic field generation unit 3 and the second magnetic field generation unit 4 are disposed to face each other. The external magnetic field H2 acting on the second magnetic detection element R2 and the third magnetic detection element R3 thus applied from the second magnetic field generation unit 4 is antiparallel. The formation positions of the magnetic detection elements R1 to R4 may be positions other than directly above and directly below the magnetic field generators 3 and 4.

図４に示すように、基板５０上に絶縁下地層５１が形成され、絶縁下地層５１上に各磁気検出素子Ｒ１〜Ｒ４が形成される。絶縁下地層５１はＡｌ₂Ｏ₃やＳｉＯ₂等である。また図４に示すように各磁気検出素子Ｒ１〜Ｒ４上は絶縁層８で覆われ、絶縁層８の平坦化面８ａ上に平面コイル２が形成される。さらに平面コイル２上が絶縁層５２で覆われる。絶縁層８，５２は、無機絶縁材料で形成されても有機絶縁材料で形成されてもどちらでもよい。 As shown in FIG. 4, the insulating base layer 51 is formed on the substrate 50, and the magnetic detection elements R 1 to R 4 are formed on the insulating base layer 51. The insulating underlayer 51 is made of Al ₂ O ₃ or SiO ₂ . As shown in FIG. 4, the magnetic detection elements R 1 to R 4 are covered with the insulating layer 8, and the planar coil 2 is formed on the planarized surface 8 a of the insulating layer 8. Further, the planar coil 2 is covered with an insulating layer 52. The insulating layers 8 and 52 may be formed of an inorganic insulating material or an organic insulating material.

図２に示すように第１磁気検出素子Ｒ１と第２磁気検出素子Ｒ２は直列接続され、第３磁気検出素子Ｒ３と第４磁気検出素子Ｒ４は直列接続されている。 As shown in FIG. 2, the first magnetic detection element R1 and the second magnetic detection element R2 are connected in series, and the third magnetic detection element R3 and the fourth magnetic detection element R4 are connected in series.

図２に示すように第１磁気検出素子Ｒ１と第３磁気検出素子Ｒ３は入力端子（入力パッド）１０に接続されている。 As shown in FIG. 2, the first magnetic detection element R 1 and the third magnetic detection element R 3 are connected to an input terminal (input pad) 10.

また第２磁気検出素子Ｒ２と第４磁気検出素子Ｒ４は夫々、別々のグランド端子（グランドパッド）１１，１２に接続されている。よって、この実施形態ではグランド端子１１，１２は２つある。ただしグランド端子は共通にしてもよい。 The second magnetic detection element R2 and the fourth magnetic detection element R4 are connected to separate ground terminals (ground pads) 11 and 12, respectively. Therefore, in this embodiment, there are two ground terminals 11 and 12. However, the ground terminal may be shared.

図２に示すように、第１磁気検出素子Ｒ１と第２磁気検出素子Ｒ２の間には第１出力端子（第１出力パッド，ＯＵＴ１）１３が接続されており、第３磁気検出素子Ｒ３と第４磁気検出素子Ｒ４の間には第２出力端子（第２出力パッド，ＯＵＴ２）１４が接続されている。 As shown in FIG. 2, a first output terminal (first output pad, OUT1) 13 is connected between the first magnetic detection element R1 and the second magnetic detection element R2, and the third magnetic detection element R3 and A second output terminal (second output pad, OUT2) 14 is connected between the fourth magnetic detection elements R4.

図１，図２に示すように、第１出力端子１３及び第２出力端子１４の出力側が差動増幅器１５に接続されている。 As shown in FIGS. 1 and 2, the output sides of the first output terminal 13 and the second output terminal 14 are connected to a differential amplifier 15.

そして図１に示すように差動増幅器１５の出力側は、外部出力端子１６に接続されている。 As shown in FIG. 1, the output side of the differential amplifier 15 is connected to the external output terminal 16.

図５に示すように、本実施形態における磁気検出素子Ｒ１〜Ｒ４は、下から下地層５３、反強磁性層５４、固定磁性層５５、非磁性層５６、フリー磁性層５７及び保護層５８の順に積層された積層構造で形成される。 As shown in FIG. 5, the magnetic detection elements R 1 to R 4 in the present embodiment include an underlayer 53, an antiferromagnetic layer 54, a fixed magnetic layer 55, a nonmagnetic layer 56, a free magnetic layer 57, and a protective layer 58 from below. It is formed in a laminated structure that is laminated in order.

反強磁性層５４は、例えば、元素α（ただしαは、Ｐｔ，Ｐｄ，Ｉｒ，Ｒｈ，Ｒｕ，Ｏｓのうち１種または２種以上の元素である）とＭｎとを含有する反強磁性材料で形成される。 The antiferromagnetic layer 54 is an antiferromagnetic material containing, for example, the element α (where α is one or more of Pt, Pd, Ir, Rh, Ru, and Os) and Mn. Formed with.

固定磁性層５５は、反強磁性層５４との界面で生じる交換結合磁界（Ｈｅｘ）により例えば図示Ｙ１方向に磁化固定されている。また図５では、固定磁性層５５は、ＣｏＦｅ等の単層構造であるが、積層構造、特に磁性層／非磁性中間層／磁性層で形成された積層フェリ構造であることが、固定磁性層５５の磁化固定力を大きくでき好適である。 The pinned magnetic layer 55 is pinned in the Y1 direction, for example, by an exchange coupling magnetic field (Hex) generated at the interface with the antiferromagnetic layer 54. In FIG. 5, the pinned magnetic layer 55 has a single-layer structure such as CoFe. However, the pinned magnetic layer has a laminated structure, particularly a laminated ferrimagnetic structure formed of a magnetic layer / nonmagnetic intermediate layer / magnetic layer. This is suitable because the magnetization fixing force of 55 can be increased.

非磁性層５６はＣｕ等で形成される。フリー磁性層５７は、ＮｉＦｅ等の磁性層を有して形成されている。フリー磁性層５７の磁化方向（Ｆ方向）は固定されておらず外部磁界により変動する。保護層５８はＴａ等の非磁性金属材料で形成される。 The nonmagnetic layer 56 is made of Cu or the like. The free magnetic layer 57 has a magnetic layer such as NiFe. The magnetization direction (F direction) of the free magnetic layer 57 is not fixed and varies with an external magnetic field. The protective layer 58 is made of a nonmagnetic metal material such as Ta.

図６（ａ）の平面図に示すように、各磁気検出素子Ｒ１〜Ｒ４は、Ｘ１−Ｘ２方向の長さ寸法Ｌ１がＹ１−Ｙ２方向の幅寸法Ｔ１より長い細長部５９が、Ｙ１−Ｙ２方向に間隔を空けて複数配列され、各細長部５９のＸ１−Ｘ２方向を向く両側端部が互い違いに連結されたミアンダ形状で形成される。ただし細長部５９は１つでもよい。 As shown in the plan view of FIG. 6A, each of the magnetic detection elements R1 to R4 has an elongated portion 59 in which the length dimension L1 in the X1-X2 direction is longer than the width dimension T1 in the Y1-Y2 direction. A plurality of arrays are arranged at intervals in the direction, and are formed in a meander shape in which both end portions facing each other in the X1-X2 direction of each elongated portion 59 are alternately connected. However, the number of the elongated portions 59 may be one.

図６（ａ）に示す実施形態では、細長部５９の長さ寸法Ｌ１を、湾曲した連結部６０を除いた残りの部分で規定している。幅寸法Ｔ１は５μｍ以下で、長さ寸法Ｌ１は幅寸法Ｔ１の２倍以上、好ましくは１０倍以上であると後述する形状異方性を大きくでき好適である。 In the embodiment shown in FIG. 6A, the length dimension L 1 of the elongated portion 59 is defined by the remaining portion excluding the curved connecting portion 60. When the width dimension T1 is 5 μm or less and the length dimension L1 is 2 times or more, preferably 10 times or more, the width dimension T1, it is preferable because shape anisotropy described later can be increased.

平面コイル２の第１磁界発生部３からは図４に示す外部磁界Ｈ１が生じ、第２磁界発生部４からは図４に示す外部磁界Ｈ２が生じる。第１磁界発生部３及び第２磁界発生部４はともにＸ１−Ｘ２方向に平行に延びる形態であり、第１磁界発生部３を構成するＸ１−Ｘ２方向に延びるコイル片６に電流が流れることで発生する外部磁界Ｈ１、及び第２磁界発生部４を構成するＸ１−Ｘ２方向に延びるコイル片６に電流が流れることで発生する外部磁界Ｈ２はともに平面視にてＹ１−Ｙ２方向を向いている。図６（ｂ）では外部磁界Ｈ１，Ｈ２の平面視方向をＣで示している。 An external magnetic field H1 shown in FIG. 4 is generated from the first magnetic field generator 3 of the planar coil 2, and an external magnetic field H2 shown in FIG. 4 is generated from the second magnetic field generator 4. Both the first magnetic field generation unit 3 and the second magnetic field generation unit 4 extend in parallel to the X1-X2 direction, and current flows through the coil piece 6 extending in the X1-X2 direction that constitutes the first magnetic field generation unit 3. And the external magnetic field H2 generated by current flowing through the coil piece 6 extending in the X1-X2 direction constituting the second magnetic field generating unit 4 are both directed in the Y1-Y2 direction in plan view. Yes. In FIG. 6B, the planar view direction of the external magnetic fields H1 and H2 is indicated by C.

本実施形態では、磁気検出素子Ｒ１〜Ｒ４の固定磁性層５５の磁化方向（Ｐ方向）は、図５、図６（ｂ）に示すように前記外部磁界Ｈ１，Ｈ２の平面視方向Ｃを向いている。 In the present embodiment, the magnetization direction (P direction) of the pinned magnetic layer 55 of the magnetic detection elements R1 to R4 faces the planar view direction C of the external magnetic fields H1 and H2, as shown in FIGS. ing.

フリー磁性層５７の磁化方向（Ｆ方向）は、無磁場状態（外部磁界が作用していない状態）で、固定磁性層５５の磁化方向（Ｐ方向）と直交状態にある。よってフリー磁性層５７の磁化方向（Ｆ方向）は、Ｘ１−Ｘ２方向を向いている。このように無磁場状態では固定磁性層５５の磁化方向（Ｐ方向）とフリー磁性層５７の磁化方向（Ｆ方向）は直交状態にあるため、無磁場状態での磁気検出素子Ｒ１〜Ｒ４の電気抵抗値は中間値Ｒｃ（最大値Ｒｍａｘと最小値Ｒｍｉｎ間の真ん中の値）となる。そして、外部磁界Ｈ１，Ｈ２の作用により、フリー磁性層５７の磁化方向（Ｆ方向）は、Ｙ１方向、あるいはＹ２方向を向く。フリー磁性層５７の磁化方向（Ｆ方向）がＹ１方向を向いたとき、固定磁性層５５の磁化方向（Ｐ方向）とフリー磁性層５７の磁化方向（Ｆ方向）は平行状態になり、電気抵抗値が中間値Ｒｃから最小値Ｒｍｉｎに変化する。一方、フリー磁性層５７の磁化方向（Ｆ方向）がＹ２方向を向いたとき、固定磁性層５５の磁化方向（Ｐ方向）とフリー磁性層５７の磁化方向（Ｆ方向）は反平行状態になり、電気抵抗値が中間値Ｒｃから最大値Ｒｍａｘに変化する。 The magnetization direction (F direction) of the free magnetic layer 57 is perpendicular to the magnetization direction (P direction) of the pinned magnetic layer 55 in a no magnetic field state (a state in which no external magnetic field is applied). Therefore, the magnetization direction (F direction) of the free magnetic layer 57 faces the X1-X2 direction. Thus, since the magnetization direction (P direction) of the pinned magnetic layer 55 and the magnetization direction (F direction) of the free magnetic layer 57 are orthogonal to each other in the absence of a magnetic field, the electricity of the magnetic detection elements R1 to R4 in the absence of a magnetic field. The resistance value is an intermediate value Rc (the middle value between the maximum value Rmax and the minimum value Rmin). The magnetization direction (F direction) of the free magnetic layer 57 is directed to the Y1 direction or the Y2 direction by the action of the external magnetic fields H1 and H2. When the magnetization direction (F direction) of the free magnetic layer 57 faces the Y1 direction, the magnetization direction (P direction) of the pinned magnetic layer 55 and the magnetization direction (F direction) of the free magnetic layer 57 are in a parallel state, and the electric resistance The value changes from the intermediate value Rc to the minimum value Rmin. On the other hand, when the magnetization direction (F direction) of the free magnetic layer 57 is in the Y2 direction, the magnetization direction (P direction) of the pinned magnetic layer 55 and the magnetization direction (F direction) of the free magnetic layer 57 are in an antiparallel state. The electric resistance value changes from the intermediate value Rc to the maximum value Rmax.

このように固定磁性層５５の磁化方向（Ｐ方向）を、外部磁界Ｈ１，Ｈ２の平面視方向Ｃと平行に向け、且つ無磁場状態にて固定磁性層５５の磁化方向（Ｐ方向）とフリー磁性層５７の磁化方向（Ｆ方向）とを直交状態にすることで、外部磁界Ｈ１，Ｈ２が作用したときに、磁気検出素子Ｒ１〜Ｒ４の電気抵抗値の変化をフルレンジで変動させることが出来る。 In this way, the magnetization direction (P direction) of the pinned magnetic layer 55 is parallel to the planar view direction C of the external magnetic fields H1 and H2, and the magnetization direction (P direction) of the pinned magnetic layer 55 is free in the absence of a magnetic field. By making the magnetization direction (F direction) of the magnetic layer 57 orthogonal, the change in the electric resistance values of the magnetic detection elements R1 to R4 can be varied over the full range when the external magnetic fields H1 and H2 are applied. .

外部磁界Ｈ１，Ｈ２の平面視方向Ｃから平面内（Ｘ−Ｙ面内）への傾き角度をθとしたとき、図６に示す実施形態では、細長部５９の長手方向の傾き角度θが略９０°である。すなわち細長部５９の長手方向はＸ１−Ｘ２方向に略平行に向けられている。 In the embodiment shown in FIG. 6, when the inclination angle from the planar view direction C of the external magnetic fields H1 and H2 to the plane (in the XY plane) is θ, the longitudinal inclination angle θ of the elongated portion 59 is substantially equal. 90 °. That is, the longitudinal direction of the elongated portion 59 is oriented substantially parallel to the X1-X2 direction.

図６（ａ）の実施形態では、細長部５９の長手方向がＸ１−Ｘ２方向に向けられているためフリー磁性層５７の磁化方向（Ｆ方向）は形状異方性により磁化容易軸方向であるＸ１−Ｘ２方向に向きやすくなる。そして、上記したように、外部磁界Ｈ１，Ｈ２の平面視方向Ｃは、Ｙ１−Ｙ２方向であり、固定磁性層５５の磁化方向（Ｐ方向）は外部磁界Ｈ１，Ｈ２の平面視方向Ｃを向いている。このような固定磁性層５５及びフリー磁性層５７の磁化方向と、外部磁界Ｈ１，Ｈ２の平面視方向Ｃとの関係により、フリー磁性層５７の磁化反転はスピン回転が支配的になり、図７に示すＲ−Ｈ波形上にてヒステリシスがほとんど発生しない。すなわち外部磁界Ｈ１，Ｈ２に対するリニア特性が向上し、これにより、従来に比べて高速応答性を向上させることが可能になる。 In the embodiment of FIG. 6A, the longitudinal direction of the elongated portion 59 is oriented in the X1-X2 direction, so the magnetization direction (F direction) of the free magnetic layer 57 is the easy axis direction due to shape anisotropy. It becomes easier to face in the X1-X2 direction. As described above, the planar view direction C of the external magnetic fields H1 and H2 is the Y1-Y2 direction, and the magnetization direction (P direction) of the pinned magnetic layer 55 faces the planar view direction C of the external magnetic fields H1 and H2. ing. Due to the relationship between the magnetization directions of the pinned magnetic layer 55 and the free magnetic layer 57 and the planar view direction C of the external magnetic fields H1 and H2, the spin reversal is dominant in the magnetization reversal of the free magnetic layer 57, and FIG. Hysteresis hardly occurs on the RH waveform shown in FIG. That is, the linear characteristics with respect to the external magnetic fields H1 and H2 are improved, and thereby it is possible to improve the high-speed response compared to the conventional case.

本実施形態では細長部５９の長手方向の傾き角度θは、７２°〜１０８°の範囲内に規定される。これにより、図８に示すように、フリー磁性層５７の保磁力Ｈｃを２Ｏｅ以下に抑えることが出来る。図８（ｂ）は、図８（ａ）の一部を拡大して示したグラフである。ここで、ヒステリシスループの広がり幅は２×保磁力Ｈｃで示される（図１１参照）。よって保磁力Ｈｃが小さいことはヒステリシスが小さいことを意味する。 In the present embodiment, the inclination angle θ in the longitudinal direction of the elongated portion 59 is defined within a range of 72 ° to 108 °. Thereby, as shown in FIG. 8, the coercive force Hc of the free magnetic layer 57 can be suppressed to 2 Oe or less. FIG. 8B is an enlarged graph showing a part of FIG. Here, the expansion width of the hysteresis loop is represented by 2 × coercive force Hc (see FIG. 11). Therefore, a small coercive force Hc means a small hysteresis.

図８では、以下の膜構成を用いてフリー磁性層の保磁力Ｈｃの実験を行った。
実験では、下からＴａ（３０）／ＮｉＦｅＣｒ（６０）／ＰｔＭｎ（２００）／Ｃｏ_90at%Ｆｅ_10at%（１７）／Ｒｕ（９）／Ｃｏ_90at%Ｆｅ_10at%（２０）／Ｃｕ（２０）／Ｃｏ_90at%Ｆｅ_10at%（１０）／Ｎｉ_81at%Ｆｅ_19at%（５０）／Ｔａ（８０）の順に積層した。フリー磁性層は、Ｃｏ_90at%Ｆｅ_10at%（１０）／Ｎｉ_81at%Ｆｅ_19at%（５０）の２層構造である。なお括弧内の数値は膜厚を示し単位はÅである。 In FIG. 8, the coercivity Hc of the free magnetic layer was tested using the following film configuration.
In the experiment, Ta (30) / NiFeCr (60) / PtMn (200) / Co _{90 at%} Fe _{10 at%} (17) / Ru (9) / Co _{90 at%} Fe _{10 at%} (20) / Cu (20) / Co _{90 at%} Fe _{10 at%} (10) / Ni _{81 at%} Fe _{19 at%} (50) / Ta (80) were laminated in this order. The free magnetic layer has a two-layer structure of Co _{90 at%} Fe _{10 at%} (10) / Ni _{81 at%} Fe _{19 at%} (50). The numbers in parentheses indicate the film thickness and the unit is Å.

また、幅寸法Ｔ１が３μｍで、長さ寸法Ｌ１が５０μｍの細長部５９を５本並列に設けたミアンダ形状で磁気検出素子Ｒ１〜Ｒ４を形成した。固定磁性層５５の磁化方向（Ｐ方向）はＹ１−Ｙ２方向であり、フリー磁性層５７の磁化方向（Ｆ方向）は、細長部５９の長手方向である。そして外部磁界をＹ１−Ｙ２方向に与え、細長部５９の長手方向の傾き角度θに対するフリー磁性層５７の保磁力Ｈｃを求めた。 Further, the magnetic detection elements R1 to R4 were formed in a meander shape in which five elongated portions 59 having a width dimension T1 of 3 μm and a length dimension L1 of 50 μm were provided in parallel. The magnetization direction (P direction) of the pinned magnetic layer 55 is the Y1-Y2 direction, and the magnetization direction (F direction) of the free magnetic layer 57 is the longitudinal direction of the elongated portion 59. An external magnetic field was applied in the Y1-Y2 direction, and the coercive force Hc of the free magnetic layer 57 with respect to the longitudinal inclination angle θ of the elongated portion 59 was determined.

図８に示すように、細長部５９の長手方向の傾き角度θを９０°に近づけることでフリー磁性層５７の保磁力Ｈｃは徐々に小さくなることがわかった。 As shown in FIG. 8, it was found that the coercive force Hc of the free magnetic layer 57 is gradually reduced by making the longitudinal inclination angle θ of the elongated portion 59 close to 90 °.

本実施形態では、細長部５９の長手方向の傾き角度θは、図８に８５°〜９５°の範囲内に規定されることが好ましく、図６に示したように、細長部５９の長手方向の傾き角度θが、略９０°であると、フリー磁性層５７の保磁力Ｈｃがほぼ０Ｏｅになり、図７のＲ−Ｈ波形に示すようにほとんどヒステリシスが生じないように出来る。 In the present embodiment, the inclination angle θ in the longitudinal direction of the elongated portion 59 is preferably defined within the range of 85 ° to 95 ° in FIG. 8, and as shown in FIG. When the inclination angle θ of the magnetic field is approximately 90 °, the coercive force Hc of the free magnetic layer 57 is approximately 0 Oe, and almost no hysteresis is generated as shown in the RH waveform of FIG.

また本実施形態では、図２，図３に示すように４つの磁気検出素子Ｒ１〜Ｒ４を用いてブリッジ回路を構成し、また無磁場状態において、固定磁性層５５の磁化方向（Ｐ方向）とフリー磁性層５７の磁化方向（Ｆ方向）とを直交させている。これにより、無磁場状態での磁気検出素子Ｒ１〜Ｒ４の電気抵抗値をほぼ中間値Ｒｃにできるため、ブリッジ回路の出力端子１３，１４の電位を無磁場状態にて中点電位に合わせやすい。このため、外部出力端子１６から得られる信号を、外部磁界の変動に合わせて高精度に出力でき、信号伝送の信頼性を向上させることができる。 In the present embodiment, as shown in FIGS. 2 and 3, a bridge circuit is configured by using four magnetic detection elements R1 to R4, and in the no magnetic field state, the magnetization direction (P direction) of the fixed magnetic layer 55 and The magnetization direction (F direction) of the free magnetic layer 57 is orthogonal. As a result, the electric resistance values of the magnetic detection elements R1 to R4 in the non-magnetic field state can be set to substantially the intermediate value Rc, so that the potentials of the output terminals 13 and 14 of the bridge circuit can be easily matched to the midpoint potential in the non-magnetic field state. For this reason, the signal obtained from the external output terminal 16 can be output with high accuracy in accordance with the fluctuation of the external magnetic field, and the signal transmission reliability can be improved.

本実施形態では、細長部５９の長手方向における傾き角度θを７２°〜１０８°に規定している。したがって図６の状態から細長部５９がやや傾いた状態を含む。このとき、無磁場状態にて、フリー磁性層５７の磁化方向（Ｆ方向）が形状異方性により細長部５９の長手方向を向いているとすると、外部磁界の平面視方向Ｃと同方向を向く固定磁性層５５の磁化方向（Ｐ方向）とは直交状態にならなくなる。このため、例えばバイアス層を設けて、フリー磁性層５７にバイアス磁界を与え、無磁場状態にて、固定磁性層５５の磁化方向（Ｐ方向）とフリー磁性層５７の磁化方向（Ｆ方向）とが直交状態になるように調整することも可能である。 In the present embodiment, the inclination angle θ in the longitudinal direction of the elongated portion 59 is defined as 72 ° to 108 °. Therefore, it includes a state where the elongated portion 59 is slightly inclined from the state of FIG. At this time, assuming that the magnetization direction (F direction) of the free magnetic layer 57 faces the longitudinal direction of the elongated portion 59 due to shape anisotropy in the absence of a magnetic field, the same direction as the planar view direction C of the external magnetic field is The magnetization direction (P direction) of the pinned magnetic layer 55 facing does not become orthogonal. For this reason, for example, a bias layer is provided, a bias magnetic field is applied to the free magnetic layer 57, and the magnetization direction (P direction) of the pinned magnetic layer 55 and the magnetization direction (F direction) of the free magnetic layer 57 in the absence of a magnetic field. It is also possible to adjust so that is in an orthogonal state.

Ｒ１〜Ｒ４磁気検出素子
１磁気結合型アイソレータ
２平面コイル
３第１磁界発生部
４第２磁界発生部
６コイル片
７送信回路
８絶縁層
５０基板
５４反強磁性層
５５固定磁性層
５６非磁性層
５７フリー磁性層
５９細長部
６０連結部 R1 to R4 Magnetic sensing element 1 Magnetic coupling type isolator 2 Planar coil 3 First magnetic field generating unit 4 Second magnetic field generating unit 6 Coil piece 7 Transmitting circuit 8 Insulating layer 50 Substrate 54 Antiferromagnetic layer 55 Fixed magnetic layer 56 Nonmagnetic layer 57 free magnetic layer 59 elongated portion 60 connecting portion

Claims

A planar coil that is wound in a plane and generates an external magnetic field by an input signal, and is disposed at a position that is electrically insulated from the planar coil and capable of magnetic coupling, and detects the external magnetic field. And a magnetic detection element for converting into an electrical signal,
The planar coil includes a magnetic field generator extending parallel to the X1-X2 direction in the plane,
The magnetic sensing element is formed of a pinned magnetic layer whose magnetization direction is fixed in one direction in a cross section cut parallel to the height direction, and a magnetization direction by the external magnetic field formed on the pinned magnetic layer via a nonmagnetic layer. And a laminating portion having a free magnetic layer that fluctuates, and in a plan view, the width dimension in one direction in the plane is T1, and the length in the direction orthogonal to the one direction in the plane is A plurality of elongated portions each having a dimension L1 and having the length dimension L1 longer than the width dimension T1 are arranged at intervals in the one direction, and the end portions on both sides of each elongated portion are alternately connected. Formed with a meander shape,
The magnetization direction of the pinned magnetic layer is oriented in a plan view direction of the external magnetic field acting from the magnetic field generation unit,
The inclination angle θ in the longitudinal direction of the elongated portion is defined within a range of 72 ° to 108 °, where θ is the inclination angle into the plane from the planar view direction of the external magnetic field. Magnetically coupled isolators.

2. The magnetically coupled isolator according to claim 1, wherein an inclination angle θ in a longitudinal direction of the elongated portion is defined within a range of 85 ° to 95 °.

3. The magnetically coupled isolator according to claim 2, wherein an inclination angle θ in the longitudinal direction of the elongated portion is approximately 90 °, and the longitudinal direction of the elongated portion is directed substantially parallel to the X1-X2 direction.

A plurality of the magnetic detection elements are provided to form a bridge circuit,
4. The magnetically coupled isolator according to claim 1, wherein the magnetization direction of the pinned magnetic layer and the magnetization direction of the free magnetic layer are perpendicular to each other in the absence of a magnetic field.