JP2010212639A - Device and method for peeling resist - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device and method for peeling a resist suppressing influence on a base and improving peelability of the resist. <P>SOLUTION: This device for peeling a resist is used for peeling a resist formed on a processing object. The device for peeling a resist includes: a cracking liquid supply means to supply a cracking liquid to the resist; a drying means to dry the cracking liquid supplied to the resist to cause a crack on the resist; and a peeling liquid supply means to supply a peeling liquid to the resist with the crack caused. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a resist stripping apparatus and a resist stripping method.

In the manufacture of semiconductor devices and flat panel displays, the resist mask used for pattern formation is peeled off using a wet peeling method or a dry ashing method (dry peeling method).
In the wet stripping method, the resist mask is dissolved and stripped using a stripping solution made of an organic solvent such as acetone or ethanol, a mixed solution of sulfuric acid and hydrogen peroxide (sulfuric acid / hydrogen peroxide solution), or the like.

  Here, if the stripping solution can be effectively infiltrated into the resist, stripping time can be shortened and residues can be suppressed. However, depending on the nature of the resist and the like, there are cases where the penetration of the stripping solution cannot be achieved. For example, when a resist is used as a mask at the time of ion implantation, an altered layer (cured layer) is formed because ions are also implanted into the resist surface. Such an altered layer (cured layer) is chemically stable, so that it is difficult to dissolve with a stripping solution, and the penetration of the stripping solution cannot be achieved.

In the dry ashing method (dry peeling method), a plasma ashing process is performed in which a plasma product is generated and the resist is removed.
Also in this plasma ashing treatment, if the plasma product such as neutral active species (radicals) and ions can be effectively infiltrated into the resist, the peeling time can be shortened and the residue can be suppressed. In this case, it is particularly preferable to effectively infiltrate the resist with neutral active species (radicals) that have little influence on the base.

  However, there are cases where neutral active species (radicals) cannot be penetrated depending on the nature of the resist. In particular, the altered layer (cured layer) is difficult to decompose and remove with oxygen radicals by oxygen plasma used in normal ashing treatment. In addition, if it is processed at a high temperature in order to improve the ashing rate, an explosion called “popping” may occur.

Therefore, a crack is caused in the deteriorated layer (hardened layer) using a technique (see Patent Document 1) that causes a crack at the interface between the base and the resist by giving a temperature difference and thereby infiltrate the stripping solution. A technique (see Patent Document 2) that promotes penetration of a stripping solution has been proposed.
However, according to the techniques disclosed in Patent Documents 1 and 2, there is a risk that thermal stress or impact force is applied to the base (for example, a wafer or a glass substrate). In addition, there is a risk of increasing the size of the apparatus and complicating the process.

JP 2003-270803 A JP 2004-157424 A

  The present invention provides a resist stripping apparatus and a resist stripping method capable of suppressing the influence on the base and improving the resist stripping property.

  According to one aspect of the present invention, there is provided a resist stripping apparatus for stripping a resist formed on an object to be processed, the cracking liquid supplying means for supplying a cracking liquid to the resist, and the cracking liquid supplied to the resist. There is provided a resist stripping apparatus comprising: drying means for drying to generate cracks in the resist; and stripping liquid supply means for supplying a stripping liquid to the resist with cracks.

  Further, according to another aspect of the present invention, there is provided a resist stripping apparatus for stripping a resist formed on an object to be processed, the crack liquid supplying means for supplying a crack liquid to the resist, and the resist being supplied to the resist. A drying means for drying the cracked liquid to generate cracks in the resist, a processing container capable of maintaining an atmosphere depressurized from atmospheric pressure, an exhaust means for reducing the pressure in the processing container, and a plasma for generating plasma There is provided a resist stripping apparatus comprising: a generating unit; and a reactive gas introducing unit that introduces a reactive gas toward the plasma.

  According to another aspect of the present invention, there is provided a resist stripping method for stripping a resist formed on an object to be processed, the step of supplying a cracking liquid to the resist, and the cracking liquid supplied to the resist And a step of generating a crack in the resist, and a step of supplying a stripping solution to the resist in which the crack has occurred.

  According to another aspect of the present invention, there is provided a resist stripping method for stripping a resist formed on an object to be processed, the step of supplying a cracking liquid to the resist, and the cracking liquid supplied to the resist Generating a crack in the resist by generating a plasma in an atmosphere depressurized from atmospheric pressure, exciting a reactive gas introduced toward the plasma to generate a plasma product, And a step of supplying a plasma product to the cracked resist.

  ADVANTAGE OF THE INVENTION According to this invention, the resist stripping apparatus and resist stripping method which can suppress the influence which it has on a base | substrate and can improve the strippability of a resist are provided.

It is a schematic cross section for illustrating the resist stripping apparatus concerning a 1st embodiment. It is a schematic diagram for illustrating about generation | occurrence | production of a crack and penetration | penetration of stripping solution. It is a schematic cross section for illustrating the resist peeling apparatus which concerns on 2nd Embodiment. It is a schematic diagram for demonstrating the crack liquid supply means which concerns on other embodiment. It is a schematic plan view for illustrating a resist peeling apparatus provided with a plurality of processing containers.

Hereinafter, embodiments of the present invention will be illustrated with reference to the drawings. In addition, in each drawing, the same code | symbol is attached | subjected to the same component and detailed description is abbreviate | omitted suitably.
FIG. 1 is a schematic cross-sectional view for illustrating a resist stripping apparatus 1 according to the first embodiment.
As shown in FIG. 1, the resist stripping apparatus 1 is provided with a processing container 11.
And the opening 11e, 11f is provided in the ceiling of the processing container 11, and the nozzle 13e mentioned later is provided in the opening 11e so that it may penetrate. Further, a nozzle 23e, which will be described later, is provided in the opening 11f.

  In the upper part of the side wall of the processing container 11, an opening 11b for carrying in / out the workpiece W is provided, and an opening / closing door 14 capable of opening and closing the opening 11b in an airtight manner is provided. In addition, an opening 11c for exhausting the inside of the processing container 11 is provided at a lower portion of the side wall, and an opening / closing means 15 capable of opening and closing the opening 11c in an airtight manner is provided. The opening 11c is connected to an exhaust means such as a vacuum pump (not shown) so that the inside of the processing container 11 can be depressurized to a desired pressure.

  On the bottom surface of the processing container 11, an opening 11 d for discharging waste liquid after processing (for example, residual cracking liquid 100 and stripping liquid 101) is provided, and opening / closing means 16 that can open and close the opening 11 d in an airtight manner. Is provided. Further, the opening 11d is connected to a discarding means such as a waste liquid tank (not shown) so that the waste liquid in the processing container 11 can be discarded.

  A mounting table 17 for mounting the workpiece W is provided in the processing container 11 so as to face the openings 11e and 11f. One end of the rotating shaft 17a is connected to the surface of the mounting table 17 facing the mounting surface (the surface on which the workpiece W is mounted), and the other end of the rotating shaft 17a is connected to the bottom surface of the processing container 11. It extends to the outside of the processing container 11 so as to penetrate. And the rotating means 17b, such as a motor, is connected to the other end of the rotating shaft 17a, and the mounting table 17 can be rotated via the rotating shaft 17a. The mounting table 17 includes a holding unit (not shown) for holding the workpiece W (for example, an electrostatic chuck), a heating unit (not shown) for heating the workpiece W (for example, a heater), and the like. Can be provided.

  A cup 18 that receives the remaining cracking liquid 100 and stripping liquid 101 is provided so as to cover the periphery of the mounting table 17. An opening 18 a is provided in the central portion of the bottom surface of the cup 18 so that the rotating shaft 17 a can be inserted and the treated waste liquid can be discharged toward the bottom surface of the processing container 11. The bottom surface of the cup 18 has a downward slope toward the opening 18a, so that the waste liquid can be easily discharged. Further, a bent portion 18b that bends toward the center direction is provided at the upper part of the side wall of the cup 18, so that the cracking liquid 100 and the peeling liquid 101 scattered upward can be easily captured. Further, one end of a lifting shaft 18 c is connected to the bottom surface of the cup 18, and the other end of the lifting shaft 18 c extends through the bottom surface of the processing container 11 and extends to the outside of the processing container 11. . The other end of the lifting shaft 18c is connected to lifting means 18d such as an air cylinder, and the cup 18 can be lifted and lowered via the lifting shaft 18c. For this reason, the cup 18 can be lowered when the workpiece W is carried in and out, so that the workpiece W can be easily transferred to the mounting table 17.

  A cracking liquid supply means 13 for supplying the cracking liquid 100 to the resist R is provided on the ceiling of the processing container 11. The crack liquid supply means 13 is provided with a tank 13 a for storing the crack liquid 100. An inlet pipe 13b for introducing an inert gas such as nitrogen gas is connected to the ceiling portion of the tank 13a so as to communicate therewith. The other end of the introduction pipe 13b is connected to a pressurizing means such as a nitrogen gas cylinder (not shown) via a control means (not shown) that controls the flow rate and pressure.

  A liquid feed pipe 13c is provided so that one end is immersed in the cracking liquid 100 stored in the tank 13a. The other end of the liquid feeding pipe 13 c is connected to a supply unit 13 d provided on the ceiling of the processing container 11. A space is provided in the supply unit 13d, and the space and the nozzle 13e provided on the ceiling of the processing container 11 communicate with each other. In addition, an opening / closing means 13f for opening and closing one end of the nozzle 13e is provided. In addition, the nozzle 13 e is provided so as to be inclined in such a direction that the cracking liquid 100 can be supplied toward the rotation center of the surface of the workpiece W placed on the placing table 17.

  Therefore, by pressurizing the inside of the tank 13a with an inert gas such as nitrogen gas, the cracking liquid 100 can be supplied from the nozzle 13e toward the surface of the workpiece W through the supply unit 13d. . In addition, the supply start and stop of the cracking liquid 100 can be performed by the opening / closing means 13f, and the supply amount can be performed by a control means (not shown) that controls the flow rate and pressure provided in the introduction pipe 13b.

As the cracking liquid 100, a solution containing an acid can be exemplified. Examples of the acid include organic acids and inorganic acids. In this case, according to the knowledge obtained by the present inventors, if a solution containing hydrofluoric acid is used as the cracking liquid 100, the resist R can be effectively cracked.
In addition, since the deteriorated layer (cured layer) formed on the surface of the resist R is chemically stable, a highly reactive acid is used for the resist R on which the deteriorated layer (cured layer) is formed. Is preferred. Even in such a case, if a solution containing hydrofluoric acid is used as the cracking liquid 100, the resist R can be effectively cracked.

  Further, as will be described later, a crack is generated in the resist R by drying the cracking liquid 100 supplied onto the resist R on the surface of the workpiece W. Therefore, since the concentration of the acid contained in the cracking liquid 100 is increased during the drying process, the concentration of the acid in the supplied cracking liquid 100 (the cracking liquid 100 stored in the tank 13a) is not particularly limited.

  However, considering the work safety and the influence on the substrate (the workpiece W), it is preferable that the acid concentration is low. In this case, the acid concentration can be appropriately changed depending on the type of acid. For example, when the acid is hydrofluoric acid, the amount can be 5% by weight or less, preferably 0.1% by weight or less.

  Further, a stripping solution supply means 23 is provided on the ceiling of the processing container 11 to supply the stripping solution 101 to the resist R in which a crack has occurred. The stripping solution supply means 23 is provided with a tank 23a for storing the stripping solution 101, and an inlet pipe 23b for introducing an inert gas is connected to the ceiling portion of the tank 23a so as to communicate therewith. The other end of the introduction pipe 23b is connected to a pressurizing means such as a nitrogen gas cylinder (not shown) through a control means (not shown) that controls the flow rate and pressure.

  Further, a liquid feeding pipe 23c is provided so that one end is immersed in the stripping liquid 101 stored in the tank 23a. The other end of the liquid feeding pipe 23 c is connected to a supply unit 23 d provided on the ceiling of the processing container 11. A space is provided in the supply unit 23d, and the space and the nozzle 23e provided on the ceiling of the processing container 11 communicate with each other. In addition, an opening / closing means 23f for opening and closing one end of the nozzle 23e is provided. Further, the nozzle 23 e is provided so as to be inclined in such a direction that the stripping liquid 101 can be supplied toward the rotation center of the surface of the workpiece W placed on the placing table 17.

  Therefore, by pressurizing the inside of the tank 23a with an inert gas such as nitrogen gas, the stripping solution 101 can be supplied from the nozzle 23e toward the surface of the workpiece W through the supply unit 23d. . Note that the supply start and stop of the stripping solution 101 can be performed by the opening / closing means 23f, and the supply amount can be performed by a control means (not shown) that controls the flow rate and pressure provided in the introduction pipe 23b.

As the stripping solution 101, for example, an organic solvent can be used. In this case, for example, acetone, ethyl alcohol, tertiary butyl alcohol, phenol / halogen organic solvent or the like can be used. Moreover, it can also be set as the liquid mixture of a sulfuric acid and hydrogen peroxide solution. In addition, acidic stripping solution (for example, alkylbenzene sulfonic acid mixed with phenol compound, chlorinated solvent, aromatic hydrocarbon, etc.) or alkaline stripping solution (for example, water-soluble organic amine and organic solvent such as dimethyl sulfoxide) Can also be made up of). However, the stripping solution 101 is not limited to these and can be changed as appropriate.
In addition, a cleaning unit (not shown) that supplies a rinse liquid such as pure water toward the workpiece W may be provided.

Next, the operation of the resist stripping apparatus 1 is illustrated, and the resist stripping method according to the present embodiment is illustrated.
A workpiece W having a resist R (resist mask) formed on the surface thereof is carried into the processing container 11 from the opening 11b by a transfer device (not shown), and is placed and held on the mounting table 17. Then, after a transfer device (not shown) has retreated from the processing container 11, the open / close door 14 is closed and the processing container 11 is sealed.

  Next, the cup 18 is raised so as to cover the periphery of the mounting table 17. Then, the mounting table 17 is rotated, and the cracking liquid 100 stored in the tank 13a is supplied toward the resist R on the surface of the workpiece W. The cracking liquid 100 supplied onto the resist R on the surface of the workpiece W becomes a film by centrifugal force. At this time, the remaining cracking liquid 100 is blown from the outer periphery of the workpiece W toward the inner surface of the cup 18 by centrifugal force, and is discharged toward the bottom surface of the processing container 11 from the opening 18a. Thereafter, the remaining cracking liquid 100 is sent to a disposal means such as a waste liquid tank (not shown) through the opening 11d.

Next, the cracking liquid 100 supplied onto the resist R on the surface of the workpiece W is dried.
Drying can be performed, for example, by reducing the pressure inside the processing container 11. Further, the workpiece W can be heated and dried by a heater or the like provided on the mounting table 17. Also, the mounting table 17 can be dried at room temperature by rotating at a low speed. Moreover, it can also dry by combining these drying methods. Note that drying by heating with a heater or the like, or drying by rotating the mounting table 17, can also be performed under atmospheric pressure. Therefore, when not drying under reduced pressure, there is no need to provide exhaust means (not shown) such as the vacuum pump described above.

  In the present embodiment, an exhaust means (not shown) for reducing the pressure inside the processing container 11, a heating means (not shown) provided on the mounting table 17, a rotating means 17b for rotating the mounting table 17, and the like are supplied to the resist R. This is a drying means for drying the liquid 100 and generating cracks in the resist R.

  By performing the drying, the film-like cracking liquid 100 is scattered in the form of droplets. Moreover, the density | concentration of the crack liquid 100 will become high. Therefore, a crack 102 (see FIG. 2) occurs in the entire resist R on the surface of the workpiece W.

Next, the mounting table 17 is rotated, and the stripping solution 101 stored in the tank 23 a is supplied toward the resist R on the surface of the workpiece W. The stripping solution 101 supplied onto the resist R on the surface of the workpiece W becomes a film by centrifugal force. Then, the stripping solution 101 supplied onto the resist R penetrates into the resist R through the crack 102, and the resist R is stripped. The remaining stripping solution 101 is blown from the outer periphery of the workpiece W toward the inner surface of the cup 18 by centrifugal force, and is discharged toward the bottom surface of the processing container 11 from the opening 18a. Thereafter, the remaining stripping liquid 101 is sent to a disposal means such as a waste liquid tank (not shown) through the opening 11d.
Thereafter, a rinsing liquid such as pure water can be supplied onto the resist R from a nozzle or the like (not shown). By doing so, the peeling time can be shortened and the surface of the workpiece W can be cleaned.

  After the resist R is peeled off, the pressure in the processing container 11 is returned to the atmospheric pressure as necessary, the cup 18 is lowered, and the workpiece W is carried out of the processing container 11 by a transfer device (not shown). The Then, the unprocessed workpiece W can be carried in as necessary, and the resist R can be stripped by the above-described procedure.

That is, in the resist stripping method according to the present embodiment, the step of supplying the cracking liquid 100 to the resist R on the surface of the workpiece W and the cracking liquid 100 supplied to the resist R are dried to crack the resist R. And a step of supplying the stripping solution 101 to the resist R in which the crack has occurred.
In this case, in the step of supplying the cracking liquid 100, the droplet-shaped cracking liquid 100 can be supplied to the resist R.

Here, the generation of cracks and the penetration of the stripping solution will be further illustrated.
FIG. 2 is a schematic diagram for illustrating the generation of cracks and the penetration of the stripping solution.
When the cracking liquid 100 is supplied onto the resist R on the surface of the workpiece W as shown in FIG. 2 (a) and dried, the film-like cracking liquid 100 is in the form of droplets as shown in FIG. 2 (b). Will be scattered.

When the drying is further continued, the concentration of the cracking liquid 100 is further increased, and cracks 102 are generated in the vicinity of the cracking liquid 100 scattered in the form of droplets as shown in FIG. That is, the crack 102 occurs in the entire region of the resist R on the surface of the workpiece W.
Thereafter, as shown in FIG. 2D, when the stripping solution 101 is supplied toward the resist R on the surface of the workpiece W, the supplied stripping solution 101 penetrates into the resist R through the crack 102, and the resist R peeling is performed.

According to the present embodiment, the cracking liquid 100 can be scattered and the crack 102 can be generated while increasing the concentration on the resist R. Therefore, the crack 102 can be effectively generated in the entire region of the resist R.
As a result, the stripping solution 101 can be effectively permeated into the resist R through the crack 102, so that the stripping property can be greatly improved. Moreover, generation | occurrence | production of a residue can also be suppressed significantly. Moreover, since the peelability can be improved, the amount of the stripper 101 used can be greatly reduced.

Further, if a solution containing hydrofluoric acid is used as the cracking liquid 100, the resist R can be effectively cracked. In this case, even the resist R having a deteriorated layer (cured layer) formed on the surface can effectively generate cracks.
Moreover, since the concentration of the acid contained in the cracking liquid 100 is increased in the drying process, the concentration of the acid in the supplied cracking liquid 100 can be lowered. Therefore, the influence on the base (the workpiece W) can be suppressed, and the safety of work can be improved.

FIG. 3 is a schematic cross-sectional view for illustrating the resist stripping apparatus 10 according to the second embodiment.
Although the resist stripping apparatus 1 illustrated in FIG. 1 strips the resist R by a wet stripping method, the resist stripping apparatus 10 according to the present embodiment removes the resist R by a dry ashing method (dry stripping method). It peels off.
Therefore, as shown in FIG. 3, the resist stripping apparatus 10 is provided with plasma generating means 12 for generating plasma P in place of the stripping solution supplying means 23 described above. Further, the processing container 11 can maintain an atmosphere whose pressure is reduced from the atmospheric pressure. In addition, an opening 11a is provided in the ceiling of the processing container 11 instead of the opening 11f. The opening 11 a is provided near the center of the ceiling of the processing container 11 so as to face the mounting surface of the mounting table 17.

  The plasma generating means 12 is provided with a cylindrical plasma generating chamber 12a made of a dielectric, and one end of the plasma generating chamber 12a is airtightly connected to the ceiling of the processing vessel 11 so as to cover the opening 11a. ing. The other end of the plasma generation chamber 12a is airtightly provided with a nozzle plate 12b provided with an opening for introducing a reactive gas. The opening of the nozzle plate 12b has a control means 12c (for example, an open / close valve such as an electromagnetic valve, a pressure reducing valve, or a mass flow controller) for opening and closing the flow path and controlling the pressure and flow rate of the reactive gas. A reactive gas introducing means 12d such as a high-pressure cylinder is connected via a flow control valve or the like. That is, the reactive gas introducing means 12d for introducing the reactive gas toward the plasma P is connected.

Examples of the reactive gas include oxygen gas and gas containing hydrogen atoms (for example, hydrogen gas, ammonia (NH ₃ ) gas, mixed gas of hydrogen gas and inert gas, etc.), and the like. . A coil 12e is provided around the plasma generation chamber 12a, and a high frequency power source 12f is connected to the coil 12e.

In addition, although the thing using a high frequency was illustrated as a plasma generation method, it is not necessarily limited to this. For example, the plasma may be generated using a microwave or the like.
Moreover, it is not necessarily limited to what peels (ashing) using an ion and a neutral active species (radical), You may use either an ion and a neutral active species (radical). However, it is more preferable to use neutral active species (radicals) that have little influence on the base (the workpiece W). In this case, for example, by using a plasma separation type such as CDE (Chemical Dry Etching) or a so-called down flow method, peeling (ashing) mainly including neutral active species (radicals) can be performed. .

Next, the operation of the resist stripping apparatus 10 will be illustrated.
Also in the resist stripping apparatus 10, the cracking liquid 100 is supplied onto the resist R on the surface of the workpiece W carried into the processing container 11, placed on the mounting table 17 and held. Then, the crack liquid 100 on the resist R is dried to cause cracks in the resist R.

Next, the inside of the processing container 11 and the plasma generation chamber 12a are depressurized to a predetermined pressure. Then, a predetermined amount of reactive gas is introduced into the plasma generation chamber 12a from the reactive gas introduction means 12d. In addition, power is supplied to the coil 12e from the high-frequency power source 12f. Therefore, plasma P is generated in the plasma generation chamber 12a, and the reactive gas introduced into the plasma generation chamber 12 is excited and activated to generate plasma products such as neutral active species (radicals) and ions. The Then, the generated plasma product descends to reach the resist R on the surface of the workpiece W, and the resist R is peeled off (ashed).
At this time, physical peeling (ashing) is performed by ions, and chemical peeling (ashing) is performed by neutral active species (radicals). Further, neutral active species (radicals) are introduced into the resist R through the crack 102.

  After the resist R is peeled off, the pressure in the processing container 11 is returned to the atmospheric pressure, the cup 18 is lowered, and the workpiece W is carried out of the processing container 11 by a transfer device (not shown). Then, the unprocessed workpiece W can be carried in as necessary, and the resist R can be stripped by the above-described procedure.

  That is, in the resist stripping method according to the present embodiment, the step of supplying the cracking liquid 100 to the resist R on the surface of the workpiece W and the cracking liquid 100 supplied to the resist R are dried to crack the resist R. A step of generating and a plasma P generated in an atmosphere depressurized from the atmospheric pressure, a reactive gas introduced toward the plasma P is excited to generate a plasma product, and a crack is generated in the plasma product. Supplying to R.

According to the present embodiment, the cracking liquid 100 can be scattered and the crack 102 can be generated while increasing the concentration on the resist R. Therefore, the crack 102 can be effectively generated in the entire region of the resist R.
As a result, neutral active species (radicals) can be effectively infiltrated into the resist R through the cracks 102, so that the peelability can be greatly improved. Moreover, generation | occurrence | production of a residue can also be suppressed significantly. In this case, neutral active species (radicals) that have little influence on the base (workpiece W) can be effectively infiltrated into the resist, so that the occurrence of damage due to peeling (ashing) can be suppressed. . Moreover, since the peelability can be improved, the amount of reactive gas used can be greatly reduced.

  Further, since cracks can be generated throughout the resist R, popping can be suppressed from occurring even when the resist R having a deteriorated layer (cured layer) formed on the surface thereof is peeled (ashed) at a high temperature. . That is, when the resist R is peeled (ashed) at a high temperature, the gas generated in the unaltered layer under the deteriorated layer (cured layer) can be released through the crack, so that the pressure rise is suppressed and the explosion (popping) is performed. ) Can be suppressed.

Further, if a solution containing hydrofluoric acid is used as the cracking liquid 100, the resist R can be effectively cracked. In this case, even the resist R having a deteriorated layer (cured layer) formed on the surface can effectively generate cracks.
Moreover, since the concentration of the acid contained in the cracking liquid 100 is increased in the drying process, the concentration of the acid in the supplied cracking liquid 100 can be lowered. Therefore, the influence on the workpiece W can be suppressed, and the safety of work can be improved.

FIG. 4 is a schematic view for illustrating a cracking liquid supply means 33 according to another embodiment.
The cracking liquid supply means 13 described above discharges the cracking liquid 100 toward the resist R on the surface of the workpiece W. The cracking liquid supply means 33 according to the present embodiment is a surface of the workpiece W. The droplet-shaped cracking liquid 100 is supplied toward the resist R.
As shown in FIG. 4, the crack liquid supply means 33 is provided with a tank 33 a for storing the crack liquid 100, an atomizing portion 33 c for atomizing the crack liquid 100, and a nozzle 33 d for spraying the atomized crack liquid 100. It has been.

  The nozzle 33d is provided so as to pass through an opening provided in the ceiling of the processing container 11. Further, an opening 33 e for spraying the atomized cracking liquid 100 is provided at the end protruding into the processing container 11. In addition, the nozzle 33 d is provided at a position where the atomized cracking liquid 100 can be sprayed toward the workpiece W placed on the mounting table 17.

  Moreover, the atomization part 33c is provided in the ceiling of the processing container 11 so that it may become airtight. And the end part of the nozzle 33d is connected so that it may communicate with the atomization part 33c. Further, a supply pipe 33b for supplying an inert gas such as nitrogen gas is connected to the atomizing section 33c so as to communicate therewith. The other end of the supply pipe 33b is connected to a gas supply means such as a nitrogen gas cylinder (not shown) via a control means (not shown) that controls the flow rate and pressure.

  Moreover, the tank 33a is connected to the atomization part 33c so that it may communicate, and the cracking liquid 100 can be supplied to the atomization part 33c. It should be noted that the cracking liquid 100 may be supplied using gravity, or may be supplied using a pressurizing means or a pump (not shown).

  And in the atomization part 33c, the droplet-shaped cracking liquid 100 is produced | generated by the inert gas supplied from the supply pipe | tube 33b, and the cracking liquid 100 supplied from the tank 33a. That is, the cracking liquid 100 is atomized. The droplet-shaped cracking liquid 100 (the atomized cracking liquid 100) is discharged (sprayed) from the opening 33e of the nozzle 33d together with the inert gas, and reaches the resist R on the surface of the workpiece W. The cracking liquid 100 that has reached the resist R adheres to the resist R in the form of droplets.

In addition, the method of making the crack liquid 100 into droplets is not limited to the illustrated example, and can be changed as appropriate. For example, it may be formed into droplets using a vibrating means such as ultrasonic waves, or may be formed into droplets by cooling the heating steam.
Further, it is sufficient that the droplet-shaped cracking liquid 100 can be discharged, and for example, a liquid using an ink jet method may be used.

  According to the present embodiment, since the cracking liquid 100 can be attached in the form of droplets, cracks can be generated more uniformly throughout the resist R. Moreover, since the useless cracking liquid 100 can be suppressed, the usage-amount of the cracking liquid 100 can be suppressed.

  The above is the case of the resist stripping apparatus that performs the generation of cracks and stripping of the resist R in one processing container 11, but is not limited thereto. For example, a plurality of processing containers may be provided, and crack generation and resist R peeling may be performed in separate processing containers.

FIG. 5 is a schematic plan view for illustrating a resist stripping apparatus including a plurality of processing containers.
As shown in FIG. 5, in the resist stripping device 40, a crack is generated by supplying a cracking liquid 100 to the resist R on the surface of the workpiece W and drying it to generate cracks. The peeling part 40b which supplies the peeling liquid 101 to the resist R which has been peeled off, and stores the workpiece W, and also transports and supplies the workpiece W to the crack generating part 40a and the peeling part 40b. 40c.

  The crack generating portion 40a is the same as the resist stripping apparatus 1 illustrated in FIG. 1 except that the stripping solution supply means 23 is not provided, and thus the description thereof is omitted. Moreover, since the peeling part 40b is the same as the resist peeling apparatus 1 illustrated in FIG. 1 except that the crack liquid supply means 13 is not provided, the description thereof is omitted.

  The transport supply unit 40 c is provided with a transport device 41 for transporting and delivering the workpiece W, a storage device 42 for storing the workpiece W, and the like. The transfer device 41 is provided with an arm 41a having a joint, and a holding means (not shown) capable of placing and holding the workpiece W is provided at the tip of the arm 41a. The base on which the arm 41a is provided is connected to a moving device (not shown). Therefore, the arm 41a is expanded and contracted so as to be bent, and the workpiece W is placed and held on the tip of the arm 41a, and can be moved in the direction of arrow A in the figure as it is. Yes.

  The storage device 42 is for storing the workpiece W that has been peeled off before peeling, and examples thereof include a carrier that can store the workpiece W in a stacked (multi-stage) manner. Specific examples include FOUP (Front-Opening Unified Pod), which is a front opening type carrier for the purpose of transporting and storing workpieces W (wafers) used in mini-environment semiconductor factories. .

Next, the operation of the resist stripping apparatus 40 will be illustrated.
First, the arm 41 a of the transport device 41 is moved to the front of the predetermined storage device 42. The door of the storage device 42 is opened by an opening / closing device (not shown). Next, the arm 41a is bent in the direction of the storage device 42 to receive the workpiece W before being peeled off. And the to-be-processed object W is taken out from the shrinkage | contraction storage apparatus 42 so that the arm 41a may be bent.
Next, the arm 41a is rotated by 180 °, and the direction thereof is directed toward the crack generating portion 40a. At that time, the position of the arm 41a is appropriately adjusted to a position facing the open / close door 14 of the crack generating portion 40a.

Next, the arm 41a is bent so as to extend in the direction of the crack generating portion 40a, and the workpiece W is carried into the processing container 11 from the opening 11b and mounted on the mounting table 17. In the crack generation part 40a, the crack liquid 100 is supplied to the resist R on the surface of the workpiece W, and the crack is generated by drying it.
Next, the workpiece W in which the resist R is cracked is unloaded from the crack generating portion 40a so as to bend the arm 41a, and is similarly loaded and placed in the peeling portion 40b. In the peeling part 40b, peeling is performed by supplying the peeling liquid 101 to the resist R in which the crack has occurred.

When the peeled workpiece W is stored in the storage device 42, the peeled workpiece W is transported and stored from the peeling portion 40b to the storage device 42 by a procedure reverse to that described above. At this time, the same processed object W that has been peeled is stored in the place where the processed object W before peeling is stored.
According to this embodiment, the generation of cracks and the separation can be performed in parallel, so that productivity can be improved.

  Also, a drying unit (not shown) can be provided outside the crack generation unit 40a. For example, a buffer device (for example, a multistage wafer carrier) or the like may be provided between the crack generation part 40a and the peeling part 40b, and this may be used as a drying part. By doing so, the stop time (standby time) of the crack generation part 40a and the peeling part 40b can be reduced, so that the production efficiency can be further improved.

  In addition, although what provided the crack liquid supply means 13 in the crack generation part 40a was illustrated, you may make it provide the crack liquid supply means 33. FIG. Moreover, although what provided the peeling liquid supply means 23 in the peeling part 40b was illustrated, you may make it provide the plasma generation means 12. FIG.

Heretofore, the present embodiment has been illustrated. However, the present invention is not limited to these descriptions.
As long as the features of the present invention are provided, those skilled in the art appropriately modified the design of the above-described embodiments are also included in the scope of the present invention.
For example, the shape, size, material, arrangement, and the like of each element included in the resist stripping apparatus 1, the resist stripping apparatus 10, and the resist stripping apparatus 40 are not limited to those illustrated, but can be changed as appropriate.
Moreover, each element with which each embodiment mentioned above is combined can be combined as much as possible, and what combined these is also included in the scope of the present invention as long as the characteristics of the present invention are included.

  DESCRIPTION OF SYMBOLS 1 Resist peeling apparatus, 10 Resist peeling apparatus, 11 Processing container, 12 Plasma generation means, 13 Crack liquid supply means, 23 Stripping liquid supply means, 40 Resist peeling apparatus, 40a Crack generation part, 40b peeling part, 40c Conveyance supply part, 100 cracking liquid, 101 stripping liquid, 102 cracking, R resist, W workpiece

Claims (10)

A resist stripping apparatus for stripping a resist formed on an object to be processed,
Cracking liquid supply means for supplying cracking liquid to the resist;
Drying means for drying the cracking liquid supplied to the resist to generate cracks in the resist;
A stripping solution supplying means for supplying a stripping solution to the resist in which the crack has occurred;
A resist stripping apparatus comprising:   2. The resist stripping apparatus according to claim 1, wherein the cracking liquid supply means supplies a droplet-shaped cracking liquid to the resist. A resist stripping apparatus for stripping a resist formed on an object to be processed,
Cracking liquid supply means for supplying cracking liquid to the resist;
Drying means for drying the cracking liquid supplied to the resist to generate cracks in the resist;
A treatment container capable of maintaining an atmosphere depressurized from atmospheric pressure;
An exhaust means for depressurizing the inside of the processing vessel;
Plasma generating means for generating plasma;
Reactive gas introduction means for introducing a reactive gas toward the plasma;
A resist stripping apparatus comprising:   The resist stripping apparatus according to claim 1, wherein the cracking liquid contains an acid.   The resist stripping apparatus according to claim 1, wherein the cracking liquid contains hydrofluoric acid. A resist stripping method for stripping a resist formed on an object to be processed,
Supplying cracking liquid to the resist;
Generating cracks in the resist by drying the cracking liquid supplied to the resist;
Supplying a stripping solution to the resist in which the crack has occurred;
A resist stripping method comprising:   The resist stripping method according to claim 6, wherein in the step of supplying the cracking liquid, a droplet-shaped cracking liquid is supplied to the resist. A resist stripping method for stripping a resist formed on an object to be processed,
Supplying cracking liquid to the resist;
Generating cracks in the resist by drying the cracking liquid supplied to the resist;
Generating plasma in an atmosphere depressurized from atmospheric pressure, exciting a reactive gas introduced toward the plasma to generate a plasma product, and supplying the plasma product to the cracked resist When,
A resist stripping method comprising:   The resist cracking method according to claim 6, wherein the cracking liquid contains an acid.   The resist peeling method according to claim 6, wherein the cracking liquid contains hydrofluoric acid.

Images