JP2010207173A - Temperature control device - Google Patents

Temperature control device Download PDF

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JP2010207173A
JP2010207173A JP2009058976A JP2009058976A JP2010207173A JP 2010207173 A JP2010207173 A JP 2010207173A JP 2009058976 A JP2009058976 A JP 2009058976A JP 2009058976 A JP2009058976 A JP 2009058976A JP 2010207173 A JP2010207173 A JP 2010207173A
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temperature control
heat
control device
heating
diffusion plate
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JP5407445B2 (en
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Nobuo Sasaki
展雄 佐々木
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Toppan Inc
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Toppan Printing Co Ltd
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    • C—CHEMISTRY; METALLURGY
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    • C12M41/00—Means for regulation, monitoring, measurement or control, e.g. flow regulation
    • C12M41/12—Means for regulation, monitoring, measurement or control, e.g. flow regulation of temperature
    • C12M41/18—Heat exchange systems, e.g. heat jackets or outer envelopes

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a temperature control device capable of locally and rapidly heating or heat-absorbing temperature control zones of a temperature control subject. <P>SOLUTION: There is provided a temperature control device heating or heat-absorbing a temperature control subject A having one or plural temperature control zones A1 arranged on an almost circular ring. The device includes a heat diffuser plate 11 of an almost circular ring shape, disposed to contact with the temperature control zones A1 of the temperature control subject A, a heat diffuser plate 12 of a circular disc shape, disposed to contact with the heat diffuser plate 11, and heating and heat-absorbing means 13 disposed to contact with the heat diffuser plate 12 and heating or heat-absorbing the heat diffuser plate 12. The heating and heat-absorbing means 13 includes a Peltier element 15 disposed to contact with the heat diffuser plate 12 and heating or heat-absorbing the heat diffuser plate 12. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

本発明は、熱拡散板を介して温度制御対象物を加熱又は吸熱する温度制御装置に関し、特に、高速に微小領域を加熱又は吸熱する温度制御装置に関する。   The present invention relates to a temperature control apparatus that heats or absorbs a temperature control object via a heat diffusion plate, and more particularly, to a temperature control apparatus that heats or absorbs a minute region at high speed.

ＤＮＡ（デオキシリボ核酸）を増幅させるための温度制御装置として、ＰＣＲ（ポリメラーゼ連鎖反応）装置が公知である。このＰＣＲ装置は、ＤＮＡを含む水溶液の温度を周期的に上下させることにより、短時間でＤＮＡを増幅させることができるものである。そして、このＰＣＲ装置を用いて、ＤＮＡの任意の断片の増幅を行うにあたり、ＤＮＡを含む水溶液が格納されたＰＣＲ用容器に対して加熱又は吸熱を行っている。   A PCR (polymerase chain reaction) apparatus is known as a temperature control apparatus for amplifying DNA (deoxyribonucleic acid). This PCR apparatus can amplify DNA in a short time by periodically raising and lowering the temperature of an aqueous solution containing DNA. And when performing amplification of arbitrary fragments of DNA using this PCR apparatus, the PCR container in which the aqueous solution containing DNA is stored is heated or endothermic.

ＰＣＲ用容器として、薄い板のなかに複数の反応槽、貯蓄槽及び流路を形成したバイオチップが公知である。単純な試験管と比較して、バイオチップは、前処理等の機能を集積しているため、一連の作業を連続して実行できる点において優れる。しかしながら、加熱又は吸熱する時に、化学反応の進行を抑制すべき貯蓄槽や流路といった部分を含めてチップの全体を加熱又は吸熱してしまうという問題がある。そのため、反応槽領域を局所的に加熱又は吸熱できる温度制御装置が特許文献１に開示されている。   As a PCR container, a biochip in which a plurality of reaction tanks, a storage tank, and a flow path are formed in a thin plate is known. Compared with a simple test tube, a biochip is superior in that a series of operations can be performed continuously because functions such as pretreatment are integrated. However, when heating or absorbing heat, there is a problem that the entire chip is heated or absorbed, including the storage tank and the flow path where the progress of the chemical reaction should be suppressed. Therefore, Patent Document 1 discloses a temperature control device that can locally heat or absorb the reaction vessel region.

特開２００８−１８５３８９号公報JP 2008-185389 A

しかしながら、特許文献１に記載の温度制御装置においては、温度制御装置と回転しているチップとの接触熱抵抗を下げるのが困難である。また、特許文献１に記載の温度制御装置においては、反応槽領域と同程度のサイズのペルチェ素子が想定されており、ペルチェ素子の吸加熱能については考慮されていない。すなわち、特許文献１に記載の温度制御装置においては、加熱又は加熱の高速化が困難である。   However, in the temperature control device described in Patent Document 1, it is difficult to reduce the contact thermal resistance between the temperature control device and the rotating chip. Moreover, in the temperature control apparatus described in Patent Document 1, a Peltier element having the same size as that of the reaction vessel region is assumed, and the absorption and heating ability of the Peltier element is not taken into consideration. That is, in the temperature control device described in Patent Document 1, it is difficult to heat or increase the speed of heating.

本発明の目的は、温度制御対象物の温度制御領域に対して局所的にかつ高速に加熱又は吸熱を行うことができる温度制御装置を提供することにある。   The objective of this invention is providing the temperature control apparatus which can perform heating or heat absorption locally and at high speed with respect to the temperature control area | region of a temperature control target object.

請求項１の発明に係る温度制御装置は、略円環上に配置されている１又は複数の温度制御領域を有する温度制御対象物に対して加熱又は吸熱を行う温度制御装置であって、前記温度制御領域に接触するように配置されている略円環状の熱拡散板と、前記熱拡散板に接触するように配置され前記熱拡散板に対し加熱又は吸熱を行う加熱吸熱手段と、を具備することを特徴とする。   A temperature control device according to the invention of claim 1 is a temperature control device that heats or absorbs heat with respect to a temperature control object having one or a plurality of temperature control regions arranged substantially on an annular shape. A substantially annular heat diffusion plate disposed so as to be in contact with the temperature control region; and a heating endothermic means disposed so as to be in contact with the heat diffusion plate and heating or absorbing heat with respect to the heat diffusion plate. It is characterized by doing.

請求項２の発明に係る温度制御装置は、請求項１に記載の発明において、前記加熱吸熱手段が、前記熱拡散板に接触するように配置され前記熱拡散板に対し加熱又は吸熱を行うペルチェ素子を具備することを特徴とする。   According to a second aspect of the present invention, there is provided a temperature control device according to the first aspect of the present invention, wherein the heating endothermic means is disposed so as to contact the thermal diffusion plate and heats or absorbs heat from the thermal diffusion plate. An element is provided.

請求項３の発明に係る温度制御装置は、請求項１及び請求項２のいずれかに記載の発明において、略円環上に配置されている前記複数の温度制御領域としての反応槽を有する前記温度制御対象物の化学反応用チップに対して加熱又は吸熱を行う温度制御装置であって、前記略円環状の熱拡散板が前記反応槽の領域に接触するように配置されていることを特徴とする。   A temperature control device according to a third aspect of the invention is the invention according to any one of the first and second aspects, wherein the plurality of temperature control regions arranged on a substantially circular ring have reaction vessels. A temperature control device that heats or absorbs heat with respect to a chemical reaction chip of a temperature control object, wherein the substantially annular heat diffusion plate is disposed so as to contact a region of the reaction vessel. And

請求項３の発明に係る温度制御装置は、請求項１から請求項３のいずれかに記載の発明において、前記熱拡散板が、０．０１ｍｍ以上４ｍｍ以下の範囲内である板厚を有することを特徴とする。   The temperature control device according to a third aspect of the present invention is the temperature control device according to any one of the first to third aspects, wherein the thermal diffusion plate has a thickness within a range of 0.01 mm to 4 mm. It is characterized by.

本発明によれば、温度制御対象物の温度制御領域に接触するように配置されている略円環状の熱拡散板に対し加熱又は吸熱を行うため、温度制御領域及び略円環状の熱拡散板の熱容量が小さいから、温度制御領域に対して局所的にかつ高速に加熱又は吸熱を行うことができる。   According to the present invention, the temperature control region and the substantially annular heat diffusion plate are used to heat or absorb the substantially annular heat diffusion plate disposed so as to be in contact with the temperature control region of the temperature control object. Therefore, it is possible to perform heating or heat absorption locally and at high speed with respect to the temperature control region.

本発明の実施の形態１に係る温度制御装置の構成を示す概略断面図である。It is a schematic sectional drawing which shows the structure of the temperature control apparatus which concerns on Embodiment 1 of this invention. 図１に示す本発明の実施の形態１に係る温度制御装置のＢ−Ｂ線に沿って切断して示す断面図である。It is sectional drawing cut | disconnected and shown along the BB line of the temperature control apparatus which concerns on Embodiment 1 of this invention shown in FIG. 図１に示す本発明の実施の形態１に係る温度制御装置のＣ−Ｃ線に沿って切断して示す断面図である。It is sectional drawing cut | disconnected and shown along CC line of the temperature control apparatus which concerns on Embodiment 1 of this invention shown in FIG. 本発明の実施の形態２に係る温度制御装置の構成を示す概略断面図である。It is a schematic sectional drawing which shows the structure of the temperature control apparatus which concerns on Embodiment 2 of this invention. 図４に示す本発明の実施の形態１に係る温度制御装置をＤ−Ｄ線に沿って切断して示す断面図である。It is sectional drawing which cuts and shows the temperature control apparatus which concerns on Embodiment 1 of this invention shown in FIG. 4 along DD line. 本発明の実施の形態３に係る温度制御装置の構成を示す概略断面図である。It is a schematic sectional drawing which shows the structure of the temperature control apparatus which concerns on Embodiment 3 of this invention.

以下、本発明の実施の形態について、図面を参照して詳細に説明する。
（実施の形態１）
図１は、本発明の実施の形態１に係る温度制御装置の構成を示す概略断面図である。図２は、図１に示す本発明の実施の形態１に係る温度制御装置のＢ−Ｂ線に沿って切断して示す断面図である。図３は、図１に示す本発明の実施の形態１に係る温度制御装置のＣ−Ｃ線に沿って切断して示す断面図である。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
(Embodiment 1)
FIG. 1 is a schematic cross-sectional view showing the configuration of the temperature control apparatus according to Embodiment 1 of the present invention. 2 is a cross-sectional view taken along line BB of the temperature control apparatus according to Embodiment 1 of the present invention shown in FIG. 3 is a cross-sectional view taken along line CC of the temperature control apparatus according to Embodiment 1 of the present invention shown in FIG.

図１に示すように、本発明の実施の形態１に係る温度制御装置は、略円環上に配置されている１又は複数の温度制御領域Ａ１を有する温度制御対象物Ａに対して加熱又は吸熱を行う温度制御装置である。本発明の実施の形態１に係る温度制御装置は、略円環状の熱拡散板１１（図２参照）、円盤状の熱拡散板及１２及び加熱吸熱手段１３を具備している。略円環状の熱拡散板１１は、円盤状の熱拡散板１２の上に配置されている。略円環状の熱拡散板１１の上には、温度制御対象物Ａが載置されている。温度制御対象物Ａの上には、受け台１４が載置されている。略円環状の熱拡散板１１は、温度制御対象物Ａの前記温度制御領域Ａ１に接触するように配置されている。   As shown in FIG. 1, the temperature control apparatus according to Embodiment 1 of the present invention heats or controls a temperature control object A having one or a plurality of temperature control regions A <b> 1 arranged on a substantially annular ring. It is a temperature control device that performs heat absorption. The temperature control device according to the first embodiment of the present invention includes a substantially annular heat diffusion plate 11 (see FIG. 2), a disk-shaped heat diffusion plate, and a heating and heat absorption means 13. The substantially annular heat diffusion plate 11 is disposed on a disk-shaped heat diffusion plate 12. On the substantially annular heat diffusion plate 11, the temperature control object A is placed. A cradle 14 is placed on the temperature control object A. The substantially annular heat diffusion plate 11 is disposed so as to contact the temperature control region A1 of the temperature control object A.

加熱吸熱手段１３は、熱拡散板１２に接触するように配置され熱拡散板１２に対し加熱又は吸熱を行うものである。加熱吸熱手段１３は、ペルチェ素子１５と、電流供給制御装置（図示せず）と、ヒートシンク１６と、を具備している。ペルチェ素子１５は、熱拡散板１２に接触するように配置され熱拡散板１２に対し加熱又は吸熱を行う。前記電流供給制御装置は、ペルチェ素子１５に電流を供給し、かつ、ペルチェ素子１５に供給する電流の向きと大きさを制御する。ペルチェ素子１５は、円盤状の熱拡散板１２及び略円環状の熱拡散板１１に対して加熱又は吸熱を行うことにより、温度制御対象物Ａの温度制御領域Ａ１に対して加熱又は吸熱を行う。ペルチェ素子１５の下面には、これに接触するようにヒートシンク１６が配置されている。ヒートシンク１６は、所定温度に維持され蓄熱作用を有する。   The heat-absorbing means 13 is disposed so as to contact the heat diffusion plate 12 and heats or absorbs heat from the heat diffusion plate 12. The heat absorption means 13 includes a Peltier element 15, a current supply control device (not shown), and a heat sink 16. The Peltier element 15 is disposed so as to be in contact with the heat diffusion plate 12 and heats or absorbs heat from the heat diffusion plate 12. The current supply control device supplies current to the Peltier element 15 and controls the direction and magnitude of the current supplied to the Peltier element 15. The Peltier device 15 heats or absorbs heat with respect to the temperature control region A1 of the temperature control object A by heating or absorbing heat with respect to the disk-shaped heat diffusion plate 12 and the substantially annular heat diffusion plate 11. . A heat sink 16 is disposed on the lower surface of the Peltier element 15 so as to be in contact therewith. The heat sink 16 is maintained at a predetermined temperature and has a heat storage effect.

なお、本発明の実施の形態１に係る温度制御装置は、円盤状の熱拡散板１２を具備しない構成であってもよい。この場合には、ペルチェ素子１５は、略円環状の熱拡散板１１に直接に接触するように配置される。   The temperature control device according to the first embodiment of the present invention may be configured not to include the disk-shaped heat diffusion plate 12. In this case, the Peltier element 15 is disposed so as to be in direct contact with the substantially annular heat diffusion plate 11.

本発明の実施の形態１においては、温度制御対象物Ａは、化学反応用チップ（バイオチップ）である。温度制御対象物Ａは、略円環上に配置されている複数の温度制御領域Ａ１としての反応槽１７の領域を有している。また、温度制御対象物Ａは、中央部に貯蓄層１８を有し、かつ、この貯蓄層１８と反応槽１７とを連通する複数の流路１９を有している。略円環状の熱拡散板１１は、温度制御対象物Ａの温度制御領域Ａ１である反応槽１７の領域に接触するように配置されている。   In Embodiment 1 of the present invention, the temperature control object A is a chemical reaction chip (biochip). The temperature control object A has a region of the reaction tank 17 as a plurality of temperature control regions A1 arranged on a substantially circular ring. Further, the temperature control object A has a storage layer 18 in the center, and has a plurality of flow paths 19 that connect the storage layer 18 and the reaction tank 17. The substantially annular heat diffusing plate 11 is disposed so as to be in contact with the region of the reaction tank 17 that is the temperature control region A1 of the temperature control object A.

熱拡散板１１、１２は、アルミニウム、銅、銀の合金などの熱伝導率の高い素材で形成されている。熱拡散板１１は、温度制御対象物Ａの下側の表面と全面的に接触するのではなく、温度制御対象物Ａの反応槽１７の表面とのみに接触している。熱拡散板１１には、図示しない温度検出部が設置されている。前記電流供給制御装置は、前記温度検出部により検出された温度に基づいてペルチェ素子１５に供給する電流の向きと大きさを制御する。   The heat diffusing plates 11 and 12 are formed of a material having high thermal conductivity such as aluminum, copper, and silver alloy. The heat diffusing plate 11 is not in full contact with the lower surface of the temperature control object A but is in contact only with the surface of the reaction tank 17 of the temperature control object A. The thermal diffusion plate 11 is provided with a temperature detection unit (not shown). The current supply control device controls the direction and magnitude of the current supplied to the Peltier element 15 based on the temperature detected by the temperature detection unit.

温度制御対象物Ａの基材は、ポリプロピレンなどの樹脂で形成されている。ポリプロピレンは、ＰＣＲ（ポリメラーゼ連鎖反応）反応を阻害しない素材である。樹脂の熱伝導率は一般に低いため、温度制御対象物Ａは、板厚方向に薄くする必要がある。温度制御対象物Ａには、反応槽１７及び貯蓄層１８及び流路１９が形成されている。反応槽１７は吸加熱すべき温度制御領域Ａ１あり、貯蓄槽１８及び流路１９は吸加熱すべきでない領域である。ペルチェ素子１５の限られた吸加熱量で、温度制御対象物Ａの反応槽１７を高速に吸加熱するためには、貯蓄槽１８及び流路１９の存在する領域に熱を拡散させることなく、反応槽１７の存在する温度制御領域Ａ１に熱を集中させる必要がある。このため、ペルチェ素子１５は、円盤状の熱拡散板１２及び略円環状の熱拡散板１１に対して加熱又は吸熱を行うことにより、温度制御対象物Ａの温度制御領域Ａ１である反応槽１７の領域に対して加熱又は吸熱を行う。   The base material of the temperature control object A is formed of a resin such as polypropylene. Polypropylene is a material that does not inhibit the PCR (polymerase chain reaction) reaction. Since the thermal conductivity of the resin is generally low, the temperature control object A needs to be thinned in the plate thickness direction. A reaction tank 17, a storage layer 18, and a flow path 19 are formed in the temperature control object A. The reaction tank 17 is a temperature control area A1 to be absorbed and heated, and the storage tank 18 and the flow path 19 are areas that should not be absorbed and heated. In order to absorb and heat the reaction tank 17 of the temperature control object A at a high speed with the limited absorption and heating amount of the Peltier element 15, without diffusing heat into the region where the storage tank 18 and the flow path 19 exist, It is necessary to concentrate heat in the temperature control region A1 where the reaction tank 17 exists. For this reason, the Peltier element 15 heats or absorbs heat from the disk-shaped heat diffusion plate 12 and the substantially annular heat diffusion plate 11, so that the reaction tank 17 which is the temperature control region A <b> 1 of the temperature control object A. Heat or endothermic the area.

（実施の形態２）
図４は、本発明の実施の形態２に係る温度制御装置の構成を示す概略断面図である。図５は、図４に示す本発明の実施の形態１に係る温度制御装置をＤ−Ｄ線に沿って切断して示す断面図である。本発明の実施の形態２においては、本発明の実施の形態１と同じ構成要素には同じ参照符号を付して、その説明を省略する。 (Embodiment 2)
FIG. 4 is a schematic cross-sectional view showing the configuration of the temperature control device according to the second embodiment of the present invention. FIG. 5 is a cross-sectional view showing the temperature control device according to Embodiment 1 of the present invention shown in FIG. 4 cut along the line DD. In the second embodiment of the present invention, the same components as those in the first embodiment of the present invention are denoted by the same reference numerals, and the description thereof is omitted.

図４及び図５に示すように、本発明の実施の形態２に係る温度制御装置は、略円環状の熱拡散板２１（図５参照）及び加熱吸熱手段２２を具備している。略円環状の熱拡散板２１は、温度制御対象物Ａの温度制御領域Ａ１の上に配置されている。温度制御対象物Ａは、受け台２３の上に載置されている。   As shown in FIGS. 4 and 5, the temperature control device according to the second embodiment of the present invention includes a substantially annular heat diffusion plate 21 (see FIG. 5) and heating heat absorption means 22. The substantially annular heat diffusion plate 21 is disposed on the temperature control region A1 of the temperature control object A. The temperature control object A is placed on the cradle 23.

加熱吸熱手段２２は、４つのペルチェ素子２３と、電流供給制御装置（図示せず）と、ヒートシンク２４と、を具備している。ペルチェ素子２３は、略円環状の熱拡散板３１の上に接触するように所定間隔をおいて配置され熱拡散板２１に対し加熱又は吸熱を行う。ヒートシンク２４は、ペルチェ素子２３の上に配置されている。   The heat-absorbing means 22 includes four Peltier elements 23, a current supply control device (not shown), and a heat sink 24. The Peltier element 23 is arranged at a predetermined interval so as to be in contact with the substantially annular heat diffusion plate 31 and heats or absorbs heat from the heat diffusion plate 21. The heat sink 24 is disposed on the Peltier element 23.

前記電流供給制御装置は、ペルチェ素子２３に電流を供給し、かつ、ペルチェ素子２３に供給する電流の向きと大きさを制御する。ペルチェ素子２３は、略円環状の熱拡散板２１に対して加熱又は吸熱を行うことにより、温度制御対象物Ａの温度制御領域Ａ１に対して加熱又は吸熱を行う。熱拡散板２１には、図示しない温度検出部が設置されている。前記電流供給制御装置は、前記温度検出部により検出された温度に基づいてペルチェ素子２３に供給する電流の大きさを制御する。   The current supply control device supplies current to the Peltier element 23 and controls the direction and magnitude of the current supplied to the Peltier element 23. The Peltier element 23 heats or absorbs heat with respect to the temperature control region A1 of the temperature control object A by heating or absorbing heat with respect to the substantially annular heat diffusion plate 21. The heat diffusion plate 21 is provided with a temperature detection unit (not shown). The current supply control device controls the magnitude of the current supplied to the Peltier element 23 based on the temperature detected by the temperature detection unit.

温度制御対象物Ａの中央領域に、検体（ＤＮＡを含む水溶液）を注入するための上へと出する凸形状の液注入機構Ａ２が設けられている。また、熱拡散板２１の板厚は、熱容量の観点から薄いほうが望ましい。   In the central region of the temperature control object A, a convex liquid injection mechanism A2 is provided that protrudes upward for injecting a specimen (an aqueous solution containing DNA). The plate thickness of the heat diffusion plate 21 is preferably thin from the viewpoint of heat capacity.

本発明の実施の形態１、２において、温度制御対象物Ａの温度制御領域Ａ１と接触するように設けられる略円環状の熱拡散板１１、２１の板厚は、０．０１ｍｍ以上４ｍｍ以下の範囲内であることが好ましい。熱拡散板１１、２１の板厚が４ｍｍを超える場合にあっては熱効率が低下することがある。一方、熱拡散板１１、２１の板厚が０．０１ｍｍに満たない場合にあっては十分な熱拡散効果が得られなくなることがある。なお、略円環状の熱拡散板１１、２１の板厚は、０．０１ｍｍ以上１ｍｍ以下の範囲内であることがより好ましい。   In the first and second embodiments of the present invention, the thickness of the substantially annular heat diffusion plates 11 and 21 provided so as to be in contact with the temperature control region A1 of the temperature control object A is 0.01 mm or more and 4 mm or less. It is preferable to be within the range. When the thickness of the heat diffusion plates 11 and 21 exceeds 4 mm, the thermal efficiency may be lowered. On the other hand, if the thickness of the heat diffusion plates 11 and 21 is less than 0.01 mm, a sufficient heat diffusion effect may not be obtained. In addition, it is more preferable that the plate | board thickness of the substantially annular heat-diffusion plates 11 and 21 exists in the range of 0.01 mm or more and 1 mm or less.

（実施の形態３）
図６は、本発明の実施の形態３に係る温度制御装置の構成を示す概略断面図である。本発明の実施の形態３においては、本発明の実施の形態１、２と同じ構成要素には同じ参照符号を付して、その説明を省略する。 (Embodiment 3)
FIG. 6 is a schematic cross-sectional view showing the configuration of the temperature control apparatus according to Embodiment 3 of the present invention. In the third embodiment of the present invention, the same components as those in the first and second embodiments of the present invention are denoted by the same reference numerals, and the description thereof is omitted.

図４に示すように、本発明の実施の形態３に係る温度制御装置は、第１の温度制御ユニット１０及び第２の温度制御ユニット２０を具備している。第１の温度制御ユニット１０は、略円環状の熱拡散板１１（図２参照）、円盤状の熱拡散板１２及び加熱吸熱手段１３を具備し、かつ、加熱吸熱手段１３がペルチェ素子１５と電流供給制御装置（図示せず）とヒートシンク１６と、を具備している。第２の温度制御ユニット２０は、略円環状の熱拡散板２１（図５参照）及び加熱吸熱手段２２を具備し、かつ、加熱吸熱手段２２が４つのペルチェ素子２３と電流供給制御装置（図示せず）とヒートシンク２４とを具備している。   As shown in FIG. 4, the temperature control device according to the third embodiment of the present invention includes a first temperature control unit 10 and a second temperature control unit 20. The first temperature control unit 10 includes a substantially annular heat diffusing plate 11 (see FIG. 2), a disk-shaped heat diffusing plate 12 and a heating endothermic means 13, and the heating endothermic means 13 is connected to the Peltier element 15. A current supply control device (not shown) and a heat sink 16 are provided. The second temperature control unit 20 includes a substantially annular heat diffusion plate 21 (see FIG. 5) and heating heat absorption means 22, and the heating heat absorption means 22 includes four Peltier elements 23 and a current supply control device (FIG. (Not shown) and a heat sink 24.

（実施例１）
次に、本発明の実施例１について説明する。
図１に示す温度制御装置を用いて、温度制御が行われた。ここで、温度制御対象物（バイオチップ）Ａの反応槽１７の領域は、９５℃に加熱され、かつ、６８℃に吸熱される。このような加熱及び吸熱が、高速に（９０秒／サイクル程度）３０サイクルくり返される。温度制御対象物Ａと接触する略円環状の熱拡散板１１は、アルミ合金であるジェラルミンからなる板厚１ｍｍの円環状のものを用いた。温度制御対象物Ａは、直径５０ｍｍであり、板厚２ｍｍであり、ポリプロピレン製のものを用いた。温度制御対象物Ａに用いられているポリプロピレンの熱伝導率は０．２Ｗ／（ｍ・Ｋ）と低いため、熱拡散板１１と接触していない温度制御対象物Ａの中央領域の温度は、高速な温度サイクルに追従しないことが確認された。 Example 1
Next, Example 1 of the present invention will be described.
Temperature control was performed using the temperature control apparatus shown in FIG. Here, the region of the reaction tank 17 of the temperature control object (biochip) A is heated to 95 ° C. and absorbed by 68 ° C. Such heating and endotherm are repeated 30 cycles at a high speed (about 90 seconds / cycle). As the substantially annular heat diffusion plate 11 in contact with the temperature control object A, an annular one having a thickness of 1 mm made of geralumin, which is an aluminum alloy, was used. The temperature control object A had a diameter of 50 mm, a plate thickness of 2 mm, and was made of polypropylene. Since the thermal conductivity of polypropylene used for the temperature control object A is as low as 0.2 W / (m · K), the temperature of the central region of the temperature control object A that is not in contact with the thermal diffusion plate 11 is It was confirmed that it did not follow a fast temperature cycle.

（実施例２）
次に、本発明の実施例２について説明する。
図５に示した温度制御装置を用い、温度制御が行われた。ここで、温度制御対象物（バイオチップ）Ａの反応槽１７の領域は、９５℃に加熱され、かつ、６８℃に吸熱される。このような加熱及び吸熱が、高速に３０サイクル繰り返される。温度制御対象物Ａと接触する熱拡散板２１は、アルミ合金であるジェラルミンからなる板厚１ｍｍの円環状のものを用いた。温度制御対象物Ａは、直径５０ｍｍ、板厚２ｍｍであり、ポリプロピレン製のものを用いた。温度制御対象物Ａに用いられているポリプロピレンの熱伝導率は０．２Ｗ／（ｍ・Ｋ）と低いため、熱拡散板２１と接触していない温度制御対象物Ａの中央領域の温度は、高速な温度サイクルに追従しない。本発明者は、９５℃の保持時間を過剰に３０秒としても、温度制御対象物Ａの中央領域の温度は９２℃に達しないことを確認した。 (Example 2)
Next, a second embodiment of the present invention will be described.
Temperature control was performed using the temperature control apparatus shown in FIG. Here, the region of the reaction tank 17 of the temperature control object (biochip) A is heated to 95 ° C. and absorbed by 68 ° C. Such heating and heat absorption are repeated 30 cycles at high speed. As the heat diffusion plate 21 in contact with the temperature control object A, an annular plate having a thickness of 1 mm made of geralumin, which is an aluminum alloy, was used. The temperature control object A had a diameter of 50 mm and a plate thickness of 2 mm, and was made of polypropylene. Since the thermal conductivity of polypropylene used for the temperature control object A is as low as 0.2 W / (m · K), the temperature of the central region of the temperature control object A that is not in contact with the thermal diffusion plate 21 is Does not follow fast temperature cycles. The inventor has confirmed that the temperature of the central region of the temperature control object A does not reach 92 ° C. even if the holding time at 95 ° C. is excessively 30 seconds.

また、温度制御対象物Ａの中央領域を不要に吸加熱しないため、従来のベタ円形状の熱拡散板を用いて温度制御対象物Ａの全体を吸加熱した場合の３０％の吸加熱量をもって、反応槽１７における加熱速度２．７℃／秒、吸熱速度１．８℃／秒という、従来と同等の吸加熱速度が得られることを確認した。したがって、本発明の実施例においては、従来と同等の吸加熱量を与えた場合に、吸加熱が高速化されるといえる。   Further, since the central region of the temperature control object A is not unnecessarily absorbed and heated, the heat absorption amount is 30% when the entire temperature control object A is absorbed and heated using a conventional solid circular heat diffusion plate. It was confirmed that the same heat absorption and heating rate as in the prior art, that is, the heating rate in the reaction tank 17 was 2.7 ° C./second and the heat absorption rate was 1.8 ° C./second. Therefore, in the embodiment of the present invention, it can be said that the speed of absorption and heating is increased when an absorption and heating amount equivalent to the conventional one is given.

１１、１２、２１ 熱拡散板
１３、２２ 加熱吸熱手段
１５、２３ ペルチェ素子
１６、２４ ヒートシンク
Ａ 温度制御対象物
Ａ１ 温度制御領域
１７ 反応槽 11, 12, 21 Heat diffusion plate 13, 22 Heat-absorbing means 15, 23 Peltier element 16, 24 Heat sink A Temperature control object A1 Temperature control region 17 Reaction tank

Claims (4)

略円環上に配置されている１又は複数の温度制御領域を有する温度制御対象物に対して加熱又は吸熱を行う温度制御装置であって、
前記温度制御領域に接触するように配置されている略円環状の熱拡散板と、
前記熱拡散板に接触するように配置され前記熱拡散板に対し加熱又は吸熱を行う加熱吸熱手段と、
を具備することを特徴とする温度制御装置。 A temperature control device that heats or absorbs heat with respect to a temperature control object having one or a plurality of temperature control regions arranged on a substantially ring,
A substantially annular heat diffusion plate arranged to contact the temperature control region;
A heating endothermic means arranged to contact the heat diffusing plate and heating or absorbing heat to the heat diffusing plate;
A temperature control apparatus comprising: 前記加熱吸熱手段は、前記熱拡散板に接触するように配置され前記熱拡散板に対し加熱又は吸熱を行うペルチェ素子を具備することを特徴とする請求項１に記載の温度制御装置。   The temperature control device according to claim 1, wherein the heat-absorbing means includes a Peltier element that is disposed so as to be in contact with the heat-diffusing plate and that heats or absorbs heat from the heat-diffusing plate. 略円環上に配置されている前記複数の温度制御領域としての反応槽を有する前記温度制御対象物の化学反応用チップに対して加熱又は吸熱を行う温度制御装置であって、
前記略円環状の熱拡散板は前記反応槽の領域に接触するように配置されていることを特徴とする請求項１及び請求項２のいずれかに記載の温度制御装置。 A temperature control device that heats or absorbs heat with respect to a chemical reaction chip of the temperature control object having a reaction vessel as a plurality of temperature control regions arranged on a substantially ring,
3. The temperature control device according to claim 1, wherein the substantially annular heat diffusion plate is disposed so as to contact an area of the reaction vessel. 4. 前記熱拡散板は、０．０１ｍｍ以上４ｍｍ以下の範囲内である板厚を有することを特徴とする請求項１から請求項３のいずれかに記載の温度制御装置。   The temperature control device according to any one of claims 1 to 3, wherein the heat diffusion plate has a thickness within a range of 0.01 mm to 4 mm.
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Publication number Priority date Publication date Assignee Title
JP2015216850A (en) * 2014-05-14 2015-12-07 凸版印刷株式会社 Temperature control device and method
CN114318304A (en) * 2021-12-27 2022-04-12 拓荆科技股份有限公司 Heating plate structure

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JP2004513779A (en) * 2000-11-23 2004-05-13 ユィロス・アクチボラグ Equipment for heat cycle
JP2008185389A (en) * 2007-01-29 2008-08-14 Yamaha Corp Temperature control device

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Publication number Priority date Publication date Assignee Title
JP2004513779A (en) * 2000-11-23 2004-05-13 ユィロス・アクチボラグ Equipment for heat cycle
JP2008185389A (en) * 2007-01-29 2008-08-14 Yamaha Corp Temperature control device

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Publication number Priority date Publication date Assignee Title
JP2015216850A (en) * 2014-05-14 2015-12-07 凸版印刷株式会社 Temperature control device and method
CN114318304A (en) * 2021-12-27 2022-04-12 拓荆科技股份有限公司 Heating plate structure
CN114318304B (en) * 2021-12-27 2023-11-24 拓荆科技股份有限公司 Heating plate structure

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