JP2010199534A - Substrate for mounting electronic component - Google Patents

Substrate for mounting electronic component Download PDF

Info

Publication number
JP2010199534A
JP2010199534A JP2009176057A JP2009176057A JP2010199534A JP 2010199534 A JP2010199534 A JP 2010199534A JP 2009176057 A JP2009176057 A JP 2009176057A JP 2009176057 A JP2009176057 A JP 2009176057A JP 2010199534 A JP2010199534 A JP 2010199534A
Authority
JP
Japan
Prior art keywords
conductor
insulating substrate
electronic component
electrode pad
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009176057A
Other languages
Japanese (ja)
Other versions
JP5240724B2 (en
Inventor
Kenichi Nagae
謙一 永江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2009176057A priority Critical patent/JP5240724B2/en
Publication of JP2010199534A publication Critical patent/JP2010199534A/en
Application granted granted Critical
Publication of JP5240724B2 publication Critical patent/JP5240724B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate for mounting electronic components, provided with electrode pads making it easy to be connected to metal terminals of a convex shape provided in the electronic components on a principal plane of an insulating substrate. <P>SOLUTION: The substrate 9 for mounting electronic components includes: an insulating substrate 1 formed by laminating a plurality of insulating layers composed of glass ceramics; and electrode pads 2 provided on the principal plane of the insulating substrate 1 and connected to electrodes 12 of electronic components 11 through metal terminals 13 of a convex shape. The electrode pad 2 is formed from inside of the insulating substrate 1 to the principal plane, and composed of a through conductor 2b, an end portion thereof projecting from the principal plane, and a metalized layer 2a deposited from the principal plane of the insulating substrate 1 to an outer periphery portion of an end plane of the through conductor 2b, and rising along the outer periphery portion. Since the metalized layer 2a is not deposited on a center portion of the through conductor 2b, a center portion of the electrode pad 2 is prevented from becoming convex, and connection of the metal terminal 13 to the electrode pad 2 can be easily made. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、ガラスセラミックスからなる絶縁基板の主面に、電子部品の電極が金属端子を介して接続される電極パッドが設けられた電子部品搭載用基板に関するものである。   The present invention relates to an electronic component mounting substrate in which an electrode pad to which an electrode of an electronic component is connected via a metal terminal is provided on the main surface of an insulating substrate made of glass ceramics.

半導体素子や容量素子,圧電振動子等の電子部品が搭載される電子部品搭載用基板として、ガラスセラミックスからなる複数の絶縁層が積層されてなる四角板状等の絶縁基板と、絶縁基板の主面に銅や銀等の金属材料を用いて設けられた、電子部品の電極が電気的に接続される電極パッドとを備えたものが多用されている。   As an electronic component mounting substrate on which electronic components such as a semiconductor element, a capacitive element, and a piezoelectric vibrator are mounted, a rectangular plate-like insulating substrate in which a plurality of insulating layers made of glass ceramics are stacked, A device provided with an electrode pad provided on a surface using a metal material such as copper or silver and to which an electrode of an electronic component is electrically connected is often used.

電極パッドは、絶縁基板の主面に被着された円形状等のパターンのメタライズ層からなり、絶縁基板の内部から主面のメタライズ層にかけて、絶縁層を厚み方向に貫通して形成された貫通導体がメタライズ層と接続されている。この貫通導体を介して、メタライズ層に電気的に接続された電子部品の電極が、絶縁基板の内部や下面等に配置された配線導体や外部接続用パッド等と電気的に接続される。この貫通導体は、一般に、メタライズ層に対する接続を確実にするために、平面視でメタライズ層の中央部分においてメタライズ層と接続されている。   The electrode pad is made of a metallized layer having a circular pattern or the like attached to the main surface of the insulating substrate, and is formed by penetrating the insulating layer in the thickness direction from the inside of the insulating substrate to the metallized layer of the main surface. A conductor is connected to the metallization layer. Through this through conductor, the electrode of the electronic component that is electrically connected to the metallized layer is electrically connected to a wiring conductor, an external connection pad, or the like disposed on the inside or the bottom surface of the insulating substrate. In general, the through conductor is connected to the metallized layer in a central portion of the metallized layer in a plan view in order to ensure connection to the metallized layer.

電極パッドに対する電子部品の電極の電気的な接続は、例えば、電子部品の電極と対向するように電極パッドを絶縁基板の主面に設けておいて、金やはんだ,アルミニウム等の金属材料からなる凸状の金属端子を電子部品の電極の表面に接合し、この金属端子を電極パッドに超音波圧着等の接合方法で直接に接続することにより行なわれる。   The electrical connection of the electrode of the electronic component to the electrode pad is made of, for example, a metal material such as gold, solder, or aluminum with the electrode pad provided on the main surface of the insulating substrate so as to face the electrode of the electronic component. A convex metal terminal is bonded to the surface of the electrode of the electronic component, and this metal terminal is directly connected to the electrode pad by a bonding method such as ultrasonic pressure bonding.

このような電子部品搭載用基板は、一般に、ガラス粉末とセラミック粉末とを有機溶剤およびバインダとともにシート状に成形して作製したセラミックグリーンシートに貫通孔を形成し、貫通孔内に金属ペースト充填した後、その充填した金属ペーストの端面およびその周囲のセラミックグリーンシートの主面に金属ペーストを所定の電極パッドのパターンで印刷し、その後、複数のセラミックグリーンシートを積層して焼成する方法で製作されている。そして、積層されて焼成されたそれぞれのセラミックグリーンシートが、絶縁基板を構成する各絶縁層になる。   Such an electronic component mounting substrate generally has a through hole formed in a ceramic green sheet produced by molding glass powder and ceramic powder into a sheet shape together with an organic solvent and a binder, and the through hole is filled with a metal paste. After that, the metal paste is printed with a predetermined electrode pad pattern on the end face of the filled metal paste and the main surface of the surrounding ceramic green sheet, and then a plurality of ceramic green sheets are laminated and fired. ing. And each ceramic green sheet laminated | stacked and baked becomes each insulating layer which comprises an insulated substrate.

特開2005−268692号公報JP 2005-268692 特開2007−324557号公報JP 2007-324557 A

しかしながら、このような電子部品搭載用基板は、絶縁基板を構成する絶縁層となるセラミックグリーンシートと貫通導体となる金属ペーストとの間で焼成時の収縮率が異なる(セラミックグリーンシートの方が大きく収縮する)ため、焼成時に貫通導体の端部が絶縁基板の主面よりも外側に突出しやすい傾向がある。この場合、貫通導体の端部が突出すると、それに応じて電極パッドを構成するメタライズ層の中央部が凸状に変形して、電極パッドの表面が凸状になる。そのため、電子部品の金属端子が電極パッドの表面で滑りやすくなる可能性があり、金属端子と電極パッドとを位置合わせして接続することが難しくなるという問題点があった。   However, in such a substrate for mounting electronic components, the shrinkage ratio during firing differs between the ceramic green sheet serving as the insulating layer constituting the insulating substrate and the metal paste serving as the through conductor (the ceramic green sheet is larger). Therefore, the end of the through conductor tends to protrude outward from the main surface of the insulating substrate during firing. In this case, when the end portion of the penetrating conductor protrudes, the central portion of the metallized layer constituting the electrode pad is deformed into a convex shape accordingly, and the surface of the electrode pad becomes convex. Therefore, there is a possibility that the metal terminal of the electronic component is likely to slip on the surface of the electrode pad, and it is difficult to align and connect the metal terminal and the electrode pad.

特に、上記のようにガラスセラミックスで絶縁層が形成されている場合には、セラミックグリーンシートと金属ペーストとの間で焼成時の収縮率の差が大きくなる傾向があるため、このような問題点が発生しやすい。   In particular, when the insulating layer is formed of glass ceramic as described above, there is a tendency that the difference in shrinkage rate during firing between the ceramic green sheet and the metal paste tends to be large. Is likely to occur.

本発明は上記従来の技術の問題点に鑑みて完成されたものであり、その目的は、電子部品が備える凸状の金属端子との接続が容易な電極パッドが絶縁基板の主面に設けられた電子部品搭載用基板を提供することにある。   The present invention has been completed in view of the above-described problems of the prior art, and an object of the present invention is to provide an electrode pad on the main surface of an insulating substrate that can be easily connected to a convex metal terminal included in an electronic component. Another object is to provide a substrate for mounting electronic components.

本発明の電子部品搭載用基板は、ガラスセラミックスからなる複数の絶縁層が積層されてなる絶縁基板と、該絶縁基板の主面に設けられ、電子部品の電極が凸状の金属端子を介して接続される電極パッドとを備える電子部品搭載用基板であって、前記電極パッドは、前記絶縁基板の内部から前記主面にかけて形成され、端部が前記主面から突出した貫通導体と、前記絶縁基板の主面から前記貫通導体の端面の外周部まで被着されて該外周部に沿って盛り上がっているメタライズ層とからなることを特徴とするものである。   The electronic component mounting substrate of the present invention is provided on an insulating substrate formed by laminating a plurality of insulating layers made of glass ceramics, and on the main surface of the insulating substrate, and an electrode of the electronic component is interposed through a convex metal terminal. An electronic component mounting substrate comprising an electrode pad to be connected, wherein the electrode pad is formed from the inside of the insulating substrate to the main surface, and an end portion protrudes from the main surface, and the insulation The metallized layer is deposited from the main surface of the substrate to the outer peripheral portion of the end surface of the through conductor and swells along the outer peripheral portion.

また、本発明の電子部品搭載用基板は、上記構成において、前記貫通導体および前記メタライズ層がそれぞれガラス成分を含有しており、前記貫通導体のガラス成分含有量が前記メタライズ層のガラス成分含有量より多いことを特徴とするものである。   Further, in the electronic component mounting substrate of the present invention, in the above configuration, the through conductor and the metallized layer each contain a glass component, and the glass component content of the through conductor is the glass component content of the metallized layer. It is characterized by more.

また、本発明の電子部品搭載用基板は、上記構成において、前記貫通導体がガラス成分を含有しており、該ガラス成分の含有量が、前記貫通導体の中央側において外周側よりも多いことを特徴とするものである。   In the electronic component mounting substrate of the present invention, in the above configuration, the through conductor contains a glass component, and the content of the glass component is larger on the central side of the through conductor than on the outer peripheral side. It is a feature.

本発明の電子部品搭載用基板によれば、電極パッドが、絶縁基板の内部から主面にかけて形成され、端部が主面から突出した貫通導体と、絶縁基板の主面から貫通導体の端面の外周部まで被着されて外周部に沿って盛り上がっているメタライズ層とからなることから、電極パッドを構成するメタライズ層が貫通導体の端面の中央部には被着されず、その分、この中央部で電極パッドの厚みを小さく抑えることができる。そのため、貫通導体が絶縁基板の表面よりも外側に突出している構造において、電極パッドの中央部が凸状になるようなことを抑制することができる。   According to the electronic component mounting substrate of the present invention, the electrode pad is formed from the inside of the insulating substrate to the main surface, the end portion protrudes from the main surface, and the end surface of the through conductor from the main surface of the insulating substrate. Since it consists of a metallized layer deposited up to the outer peripheral part and rising along the outer peripheral part, the metallized layer constituting the electrode pad is not applied to the central part of the end face of the through conductor, and the center The thickness of the electrode pad can be kept small at the portion. Therefore, in the structure in which the through conductor protrudes outward from the surface of the insulating substrate, it is possible to suppress the central portion of the electrode pad from being convex.

また、電極パッドは、メタライズ層が貫通導体の端面の外周部まで被着され、中央部には被着されないので、メタライズ層の厚さに応じて、中央部に凹状の部分が形成される。そして、この凹状の部分に金属端子(電子部品の電極に接合された金属端子の先端部分等)が納まることで、金属端子の電極パッドに対する位置決めが容易になるという効果を得ることもできる。   Further, since the metallized layer is attached to the outer peripheral portion of the end face of the through conductor and is not attached to the central portion of the electrode pad, a concave portion is formed in the central portion according to the thickness of the metalized layer. In addition, since the metal terminal (the tip portion of the metal terminal joined to the electrode of the electronic component) is accommodated in the concave portion, an effect of facilitating the positioning of the metal terminal with respect to the electrode pad can be obtained.

したがって、本発明の電子部品搭載用基板によれば、電子部品が備える凸状の金属端子との接続が容易な電極パッドが絶縁基板の主面に設けられた電子部品搭載用基板を提供することができる。   Therefore, according to the electronic component mounting substrate of the present invention, it is possible to provide an electronic component mounting substrate in which electrode pads that can be easily connected to the convex metal terminals included in the electronic component are provided on the main surface of the insulating substrate. Can do.

また、本発明の電子部品搭載用基板は、上記構成において、貫通導体およびメタライズ層がそれぞれガラス成分を含有しており、貫通導体のガラス成分含有量がメタライズ層のガラス成分含有量より多い場合には、電極パッドを構成する貫通導体およびメタライズ層のうち、絶縁層により周囲を囲まれて、絶縁層との間で熱応力等の応力がより大きく作用しやすい貫通導体において、ガラス成分の添加による、絶縁層との熱膨張率の差を低減する効果をより大きく得ることができる。そのため、例えば熱応力による貫通導体のクラック等の不具合をより効果的に抑制して、電極パッドとしての絶縁基板に対する被着の信頼性を高めることができる。   In the electronic component mounting substrate of the present invention, in the above configuration, the through conductor and the metallized layer each contain a glass component, and the glass component content of the through conductor is greater than the glass component content of the metallized layer. Among the through conductors and metallized layers that make up the electrode pad, through the addition of glass components in the through conductors that are surrounded by an insulating layer and that are more susceptible to stresses such as thermal stress with the insulating layer. The effect of reducing the difference in coefficient of thermal expansion with the insulating layer can be further increased. Therefore, for example, defects such as cracks of the through conductor due to thermal stress can be more effectively suppressed, and the reliability of deposition on the insulating substrate as the electrode pad can be increased.

また、金属端子との接続面積が比較的大きいメタライズ層におけるガラス成分含有量が少ないので、金属端子と電極パッドとの間の、例えば超音波圧着等による接合の強度を高める上で有効である。   Further, since the glass component content in the metallized layer having a relatively large connection area with the metal terminal is small, it is effective in increasing the strength of bonding between the metal terminal and the electrode pad, for example, by ultrasonic pressure bonding.

また、本発明の電子部品搭載用基板は、上記構成において、貫通導体がガラス成分を含有しており、ガラス成分の含有量が、貫通導体の中央側において外周側よりも多い場合には、貫通導体の中央側について、ガラス成分の添加により貫通導体となる金属ペーストの焼成時の収縮率をセラミックグリーンシートの収縮率に近付けて、より効果的に貫通導体の端部が絶縁基板の主面から突出することを抑制することができる。   In the electronic component mounting board of the present invention, in the above configuration, when the through conductor contains a glass component and the content of the glass component is larger than the outer peripheral side at the center side of the through conductor, the through conductor penetrates. For the center side of the conductor, the shrinkage rate during firing of the metal paste that becomes the through conductor by adding the glass component is brought close to the shrinkage rate of the ceramic green sheet, and the end portion of the through conductor is more effectively separated from the main surface of the insulating substrate. Protruding can be suppressed.

また、貫通導体におけるガラス成分の含有量が外周側では少ないので、貫通導体としての電気抵抗を低く抑えることができる。特に、貫通導体を数MHz程度以上の高周波信号が伝送される場合には、いわゆる表皮効果のため、主に貫通導体の外周側で信号が伝送されるので、信号の伝送に対してガラス成分が妨げになるようなことも有効に抑制することができる。   Moreover, since the content of the glass component in the through conductor is small on the outer peripheral side, the electrical resistance as the through conductor can be kept low. In particular, when a high-frequency signal of several MHz or more is transmitted through the through conductor, the signal is transmitted mainly on the outer peripheral side of the through conductor due to the so-called skin effect, so that the glass component is less than the signal transmission. Any obstacles can be effectively suppressed.

(a)は本発明の電子部品搭載用基板の実施の形態の一例を示す平面図であり、(b)はそのA−A線における断面図である。(A) is a top view which shows an example of embodiment of the electronic component mounting board | substrate of this invention, (b) is sectional drawing in the AA line. 図1に示す電子部品搭載用基板の要部を拡大して示す要部拡大断面図である。It is a principal part expanded sectional view which expands and shows the principal part of the electronic component mounting board | substrate shown in FIG. (a)および(b)は、それぞれ本発明の電子部品搭載用基板の実施の形態の他の例を示す要部拡大断面図である。(A) And (b) is a principal part expanded sectional view which shows the other example of embodiment of the electronic component mounting board | substrate of this invention, respectively.

本発明の電子部品搭載用基板を添付の図面を参照しつつ詳細に説明する。図1(a)は本発明の電子部品搭載用基板の実施の形態の一例を示す平面図であり、(b)は(a)のA−A線における断面図である。また、図2は、図1に示す電子部品搭載用基板の要部を拡大して示す拡大断面図である。図1および図2において、1は絶縁基板、2はメタライズ層2aおよび貫通導体2bからなる電極パッド、3は配線導体である。絶縁基板1と、絶縁基板1の主面に設けられた電極パッド2とにより電子部品搭載用基板9が基本的に構成されている。   The electronic component mounting board of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1A is a plan view showing an example of an embodiment of an electronic component mounting board according to the present invention, and FIG. 1B is a sectional view taken along line AA in FIG. FIG. 2 is an enlarged cross-sectional view showing an essential part of the electronic component mounting board shown in FIG. In FIGS. 1 and 2, 1 is an insulating substrate, 2 is an electrode pad comprising a metallized layer 2a and a through conductor 2b, and 3 is a wiring conductor. An electronic component mounting substrate 9 is basically constituted by the insulating substrate 1 and the electrode pads 2 provided on the main surface of the insulating substrate 1.

絶縁基板1は、ガラスセラミックスからなる複数の絶縁層(符号なし)が積層されて形成されている。絶縁層の積層数は、図1に示す例では4層であるが、これ以外の積層数でも構わない。   The insulating substrate 1 is formed by laminating a plurality of insulating layers (no symbol) made of glass ceramics. In the example shown in FIG. 1, the number of insulating layers is four, but other numbers may be used.

絶縁基板1は、例えば各絶縁層が、ホウケイ酸系ガラスにセラミック成分として酸化アルミニウムを添加してなるガラスセラミックスからなる場合であれば、次のようにして製作することができる。すなわち、酸化ケイ素,酸化ホウ素等のガラス成分の粉末に酸化アルミニウム等のセラミック粉末を添加した原料粉末に適当な有機バインダおよび有機溶剤を添加混合して泥漿状となすとともに、これをドクターブレード法やリップコータ法等のシート成形技術を採用してシート状となすことにより複数枚のセラミックグリーンシートを得て、しかる後、セラミックグリーンシートを切断加工や打ち抜き加工により適当な形状とするとともにこれを複数枚積層し、最後にこの積層されたセラミックグリーンシートを還元雰囲気中において約950〜1000℃の温度で焼成することによって製作される。   The insulating substrate 1 can be manufactured as follows, for example, when each insulating layer is made of glass ceramics obtained by adding aluminum oxide as a ceramic component to borosilicate glass. That is, a suitable organic binder and an organic solvent are added to and mixed with a raw material powder obtained by adding a ceramic powder such as aluminum oxide to a glass component powder such as silicon oxide or boron oxide, and the mixture is mixed with a doctor blade method or A plurality of ceramic green sheets are obtained by adopting a sheet forming technique such as a lip coater method to form a sheet, and then the ceramic green sheet is formed into an appropriate shape by cutting or punching, and a plurality of these are obtained. The laminated ceramic green sheets are finally laminated and fired at a temperature of about 950 to 1000 ° C. in a reducing atmosphere.

絶縁基板1は、例えば四角板状であり、電子部品11を搭載し支持するための基体として機能し、主面(図1に示す例では上面)に電子部品11が搭載される。電子部品11としては、ICやLSI等の半導体集積回路素子、およびLED(発光ダイオード)やPD(フォトダイオード),CCD(電荷結合素子)等の光半導体素子を含む半導体素子、弾性表面波素子や水晶振動子等の圧電素子,容量素子,抵抗器,半導体基板の表面に微小な電子機械機構が形成されてなるマイクロマシン(いわゆるMEMS素子)等の種々の電子部品11が挙げられる。   The insulating substrate 1 has, for example, a rectangular plate shape, functions as a base for mounting and supporting the electronic component 11, and the electronic component 11 is mounted on the main surface (upper surface in the example shown in FIG. 1). Examples of the electronic component 11 include semiconductor integrated circuit elements such as IC and LSI, semiconductor elements including optical semiconductor elements such as LED (light emitting diode), PD (photodiode), and CCD (charge coupled device), surface acoustic wave elements, Various electronic components 11 such as a piezoelectric element such as a crystal resonator, a capacitive element, a resistor, and a micromachine (so-called MEMS element) in which a minute electromechanical mechanism is formed on the surface of a semiconductor substrate can be given.

絶縁基板1の電子部品11が搭載される主面には、電子部品11の電極12が電気的に接続される電極パッド2が設けられている。電極12と電極パッド2との電気的な接続は、例えば図2に示すように、金やはんだ,アルミニウム等の金属からなる凸状の金属端子13を電極12に接合しておき、この金属端子13を電極パッド2に超音波圧着等の接合方法で直接に接続することにより行なわれる。なお、金属端子13の電極12に対する接合は、超音波圧着や溶融接合等の方法で行なわれる。   On the main surface on which the electronic component 11 of the insulating substrate 1 is mounted, an electrode pad 2 to which the electrode 12 of the electronic component 11 is electrically connected is provided. As shown in FIG. 2, for example, the electrode 12 and the electrode pad 2 are electrically connected by bonding a convex metal terminal 13 made of a metal such as gold, solder, or aluminum to the electrode 12. 13 is directly connected to the electrode pad 2 by a bonding method such as ultrasonic pressure bonding. The metal terminal 13 is bonded to the electrode 12 by a method such as ultrasonic pressure bonding or fusion bonding.

この電子部品搭載用基板9において、電極パッド2は、絶縁基板1の内部から主面にかけて形成され、端部が主面から突出した貫通導体2bと、絶縁基板1の主面から貫通導体2bの端面の外周部まで被着されて、その外周部に沿って盛り上がっているメタライズ層2aとからなっている。   In the electronic component mounting substrate 9, the electrode pad 2 is formed from the inside of the insulating substrate 1 to the main surface, and the end portion protrudes from the main surface, and the through conductor 2 b extends from the main surface of the insulating substrate 1. It consists of a metallized layer 2a that is deposited up to the outer peripheral portion of the end face and rises along the outer peripheral portion.

このような電子部品搭載用基板9によれば、電極パッド2が、上記のように貫通導体2bとメタライズ層2aとからなることから、電極パッド2を構成するメタライズ層2aが貫通導体2bの端面の中央部には被着されず、その分、この中央部で電極パッド2の厚みを小さく抑えることができる。そのため、貫通導体2bが絶縁基板1の表面よりも外側に突出している構造において、電極パッド2の中央部が凸状になるようなことを効果的に抑制することができる。   According to such an electronic component mounting substrate 9, since the electrode pad 2 is composed of the through conductor 2b and the metallized layer 2a as described above, the metallized layer 2a constituting the electrode pad 2 is the end surface of the through conductor 2b. Therefore, the thickness of the electrode pad 2 can be kept small at this central portion. Therefore, in the structure in which the through conductor 2b projects outward from the surface of the insulating substrate 1, it is possible to effectively suppress the central portion of the electrode pad 2 from being convex.

また、電極パッド2は、メタライズ層2aが貫通導体2bの端面の外周部まで被着されているが、貫通導体2bの端面の中央部にはメタライズ層2aが被着されないので、メタライズ層2aの厚さに応じて、中央部に凹状の部分(符号なし)が形成される。そして、この凹状の部分に金属端子13(金属端子13の先端部分等)が納まり、金属端子13の電極パッド2に対する位置決めがより容易で確実になるという効果を得ることもできる。   The electrode pad 2 has the metallized layer 2a attached to the outer peripheral portion of the end surface of the through conductor 2b, but the metallized layer 2a is not attached to the center of the end surface of the through conductor 2b. Depending on the thickness, a concave portion (no symbol) is formed at the center. In addition, the metal terminal 13 (the tip portion of the metal terminal 13 or the like) is accommodated in the concave portion, and the effect that the positioning of the metal terminal 13 with respect to the electrode pad 2 is easier and more reliable can be obtained.

したがって、このような電子部品搭載用基板9によれば、電子部品11が備える凸状の金属端子13との接続が容易な電極パッド2が絶縁基板1の主面に設けられた電子部品搭載用基板9を提供することができる。   Therefore, according to such an electronic component mounting substrate 9, an electronic component mounting substrate in which the electrode pad 2 that can be easily connected to the convex metal terminal 13 included in the electronic component 11 is provided on the main surface of the insulating substrate 1. A substrate 9 can be provided.

なお、このような電極パッド2は、貫通導体2bの外周部においてメタライズ層2aが盛り上がっているので、例えば画像認識装置によるこの盛り上がっている部分の内縁の認識が容易である。そして、この内縁の位置は、凹状の部分の外縁の位置にほぼ相当するため、画像認識装置による電子部品11の金属端子13と電極パッド2(特に凹状の部分)との位置合わせを容易とすることもできる。   In such an electrode pad 2, since the metallized layer 2a is raised at the outer peripheral portion of the through conductor 2b, the inner edge of the raised portion can be easily recognized by, for example, an image recognition device. Since the position of the inner edge substantially corresponds to the position of the outer edge of the concave portion, it is easy to align the metal terminal 13 of the electronic component 11 and the electrode pad 2 (particularly the concave portion) by the image recognition device. You can also

メタライズ層2aおよび貫通導体2bは、銅や銀,パラジウム,金,白金等の金属材料により形成されている。これらの金属材料、特に銅および銀は、電気抵抗が低いため、電極パッド2における電気抵抗を低く抑えて、電子部品11を電極パッド2に電気的に接続したときの導通抵抗等の電気特性を高くする上で有利である。本発明の電子部品搭載用基板9においては、絶縁基板1がガラスセラミックスからなる絶縁層が積層されたものであるため、絶縁基板1を製作するときの焼成温度が上記のように比較的低く、銅や銀等の融点(銅:約1083℃、銀:約962℃)が比較的低い金属材料で電極パッド2を、絶縁基板1との同時焼成で形成することが容易である。   The metallized layer 2a and the through conductor 2b are formed of a metal material such as copper, silver, palladium, gold, or platinum. Since these metal materials, particularly copper and silver, have low electrical resistance, electrical characteristics such as conduction resistance when the electronic component 11 is electrically connected to the electrode pad 2 by suppressing the electrical resistance in the electrode pad 2 low. It is advantageous to make it high. In the electronic component mounting substrate 9 of the present invention, since the insulating substrate 1 is formed by laminating insulating layers made of glass ceramics, the firing temperature when manufacturing the insulating substrate 1 is relatively low as described above. It is easy to form the electrode pad 2 by co-firing with the insulating substrate 1 using a metal material having a relatively low melting point (copper: about 1083 ° C., silver: about 962 ° C.) such as copper or silver.

メタライズ層2aは、例えば平面視で円環状や楕円環状,四角枠状等の多角形の枠状等であり、外側の部分が絶縁基板1の主面と接合し、それよりも内側の部分が貫通導体2bの端面と接合して、電子部品11の金属端子13を接続するための電極パッド2を構成している。メタライズ層2aの厚さは、例えば前述したような電子部品11の金属端子13が金やはんだからなる場合であれば、約10〜35μmに設定すればよい。   The metallized layer 2a has, for example, a circular frame shape, an elliptical ring shape, a polygonal frame shape such as a rectangular frame shape in plan view, and the outer portion is joined to the main surface of the insulating substrate 1, and the inner portion is more than that. The electrode pad 2 for connecting the metal terminal 13 of the electronic component 11 is joined to the end face of the through conductor 2b. For example, when the metal terminal 13 of the electronic component 11 is made of gold or solder, the thickness of the metallized layer 2a may be set to about 10 to 35 μm.

貫通導体2bは、例えば端面および横断面が円形状や楕円形状であり、直径が約50〜200μm程度の寸法で形成されている。貫通導体2bは、電極パッド2の一部を構成するとともに、この電極パッド2と電気的に接続される電子部品11を外部電気回路(図示せず)に電気的に接続するための導電路の一部を構成している。   The through conductor 2b has, for example, a circular shape or an oval shape in the end surface and the cross section, and has a diameter of about 50 to 200 μm. The through conductor 2b constitutes a part of the electrode pad 2, and a conductive path for electrically connecting the electronic component 11 electrically connected to the electrode pad 2 to an external electric circuit (not shown). Part of it.

すなわち、貫通導体2bのうち絶縁基板1の電子部品11が搭載される主面側の端部がメタライズ層2aとともに電極パッド2を形成しており、他の端部が絶縁基板1の内部で、例えば後述する配線導体3と接続している。そして、電極パッド2に電気的に接続された電子部品11が、貫通導体2bおよび配線導体3を介して絶縁基板1の側面や下面等の外表面に電気的に導出され、この導出部分が外部電気回路と接続されて、電子部品11と外部電気回路とが電気的に接続される。   That is, the end portion of the through conductor 2b on the main surface side on which the electronic component 11 of the insulating substrate 1 is mounted forms the electrode pad 2 together with the metallized layer 2a, and the other end portion is inside the insulating substrate 1, For example, it connects with the wiring conductor 3 mentioned later. Then, the electronic component 11 electrically connected to the electrode pad 2 is electrically led out to the outer surface such as the side surface and the bottom surface of the insulating substrate 1 through the through conductor 2b and the wiring conductor 3, and this lead portion is externally connected. Connected to the electric circuit, the electronic component 11 and the external electric circuit are electrically connected.

貫通導体2bは、絶縁基板1となるセラミックグリーンシートに貫通孔(図示せず)を、機械的な打ち抜き加工やレーザ光による孔あけ加工等の方法で形成しておき、この貫通孔内に、銅や銀,パラジウム,金,白金等の金属ペーストをスクリーン印刷法等の方法で充填しておくことにより、絶縁基板1に形成することができる。なお、金属ペーストは、これらの金属材料の粉末を有機溶剤および有機バインダとともに混練することにより作製する。この場合、貫通孔は、少なくとも絶縁基板1のうち電子部品11が搭載される部分に形成しておく必要がある。   The through conductor 2b has a through hole (not shown) formed in the ceramic green sheet to be the insulating substrate 1 by a method such as mechanical punching or drilling with a laser beam. By filling a metal paste such as copper, silver, palladium, gold, or platinum by a method such as screen printing, the insulating substrate 1 can be formed. The metal paste is produced by kneading these metal material powders together with an organic solvent and an organic binder. In this case, the through hole needs to be formed at least in a portion of the insulating substrate 1 where the electronic component 11 is mounted.

また、メタライズ層2aは、上記と同様の金属ペーストを絶縁基板1となるセラミックグリーンシートの表面に、この表面から貫通孔内に充填した金属ペーストの外周部まで印刷塗布しておくことにより形成することができる。なお、この金属ペーストの印刷を貫通孔内に充填した金属ペーストの外周部までとするには、例えばスクリーン印刷に用いる版面のパターンを、このような範囲で印刷できるようなパターンとしておけばよい。   Further, the metallized layer 2a is formed by printing and applying a metal paste similar to the above onto the surface of a ceramic green sheet serving as the insulating substrate 1 from the surface to the outer periphery of the metal paste filled in the through holes. be able to. In order to print the metal paste up to the outer periphery of the metal paste filled in the through-holes, for example, the pattern of the printing plate used for screen printing may be a pattern that can be printed in such a range.

そして、これらの金属ペーストを充填し、塗布したセラミックグリーンシートの積層体を焼成したときに、セラミックグリーンシートと金属ペーストとの収縮率の差(セラミックグリーンシートの方が大きく収縮する)により、貫通孔内に充填された金属ペーストの端部が絶縁基板1の主面(セラミックグリーンシートの積層体の表面)から突出する。また、その突出する金属ペースト(貫通導体2b)の端部の外周部に沿って、この部分に塗布しておいた金属ペースト(メタライズ層2a)が盛り上がる。このとき、メタライズ層2aの貫通導体2bの外周部に沿った部分は、上記のように貫通導体2bの突出に伴って盛り上がるので、メタライズ層2aとなる金属ペーストを、特別にこの外周部分で厚くなるように塗布する必要はない。   And when these metal pastes are filled and the laminated body of the applied ceramic green sheets is fired, the ceramic green sheet and metal paste shrink due to the difference in shrinkage rate (the ceramic green sheet shrinks more). The ends of the metal paste filled in the holes protrude from the main surface of the insulating substrate 1 (the surface of the ceramic green sheet laminate). Further, the metal paste (metallized layer 2a) applied to this portion rises along the outer peripheral portion of the end portion of the protruding metal paste (through conductor 2b). At this time, the portion along the outer peripheral portion of the through conductor 2b of the metallized layer 2a rises with the protrusion of the through conductor 2b as described above, so that the metal paste that becomes the metallized layer 2a is specially thickened at the outer peripheral portion. It is not necessary to apply so.

なお、上記のような、貫通導体2bが絶縁基板1の主面から突出する高さは、例えば絶縁基板1がホウケイ酸系ガラス成分と酸化アルミニウムを主成分とするセラミックスからなる絶縁層で構成され、貫通導体2bが、銅(銅の金属ペーストを焼成したもの)からなり、直径が約50〜200μm程度の場合であれば、約6〜12μm程度である。   The height at which the through conductor 2b protrudes from the main surface of the insulating substrate 1 as described above is, for example, that the insulating substrate 1 is composed of an insulating layer made of ceramics mainly composed of a borosilicate glass component and aluminum oxide. When the through conductor 2b is made of copper (fired copper metal paste) and has a diameter of about 50 to 200 μm, it is about 6 to 12 μm.

また、貫通導体2bの外周部分におけるメタライズ層2aの盛り上がっている部分について、貫通導体2bの端面からの高さは、例えば、前述したメタライズ層2aの厚さ程度(約10〜35μm程度)である。   Further, the height from the end surface of the through conductor 2b of the raised portion of the metallized layer 2a in the outer peripheral part of the through conductor 2b is, for example, about the thickness of the metallized layer 2a (about 10 to 35 μm). .

以上のようにして、絶縁基板1の内部から主面にかけて形成された貫通導体2bと、絶縁基板1の主面から貫通導体2bの端面の外周部まで被着されたメタライズ層2aとからなる電極パッド2を絶縁基板1の主面に設けることができる。   As described above, an electrode comprising the through conductor 2b formed from the inside of the insulating substrate 1 to the main surface and the metallized layer 2a deposited from the main surface of the insulating substrate 1 to the outer peripheral portion of the end surface of the through conductor 2b. The pad 2 can be provided on the main surface of the insulating substrate 1.

なお、メタライズ層2aは、絶縁基板1を形成するガラスセラミックスがホウケイ酸ガラスと酸化アルミニウムとを主成分とし、貫通導体2bが銅を主成分とする場合であり、貫通導体2bの端面が直径約50〜200μm程度の円形状であれば、貫通導体2bの端面の全面の面積のうち約60%の範囲で外周部に被着するようにすればよい。このメタライズ層2aは、円環状や楕円環状,四角枠状等の形状であり、例えば円環状の場合であれば、外周の直径を約200〜500μm程度とし、貫通導体2bの端面の外周縁から内側に約5〜10μm程度の幅で被着させればよい。   The metallized layer 2a is a case where the glass ceramic forming the insulating substrate 1 is mainly composed of borosilicate glass and aluminum oxide, and the through conductor 2b is mainly composed of copper, and the end surface of the through conductor 2b has a diameter of about In the case of a circular shape of about 50 to 200 μm, it may be attached to the outer peripheral portion in a range of about 60% of the entire area of the end face of the through conductor 2b. The metallized layer 2a has an annular shape, an elliptical annular shape, a rectangular frame shape or the like. For example, in the case of an annular shape, the outer diameter is about 200 to 500 μm, and the outer peripheral edge of the end face of the through conductor 2b What is necessary is just to make it adhere with the width | variety of about 5-10 micrometers inside.

また、この実施の形態の例において、絶縁基板1の内部から外表面にかけて、配線導体3が形成されている。配線導体3は、一部が絶縁基板1の内部に位置して貫通導体2bと電気的に接続し、他の一部が絶縁基板1の側面や下面等の外表面に位置している。配線導体3は、例えば、貫通導体2bを介して電子部品11の電極12と電気的に接続されるとともに、絶縁基板1の側面や下面に位置した部分がはんだや導電性接着剤等を介して外部電気回路(図示せず)と接続されて、電子部品11と外部電気回路とを電気的に接続する導電路として機能する。   In the example of this embodiment, the wiring conductor 3 is formed from the inside of the insulating substrate 1 to the outer surface. A part of the wiring conductor 3 is located inside the insulating substrate 1 and is electrically connected to the through conductor 2 b, and the other part is located on the outer surface such as a side surface or a lower surface of the insulating substrate 1. For example, the wiring conductor 3 is electrically connected to the electrode 12 of the electronic component 11 via the through conductor 2b, and the portions located on the side surface and the lower surface of the insulating substrate 1 are connected via solder, conductive adhesive, or the like. It is connected to an external electric circuit (not shown) and functions as a conductive path that electrically connects the electronic component 11 and the external electric circuit.

配線導体3も、メタライズ層2aや貫通導体2bと同様の金属材料からなり、絶縁層の層間や絶縁基板1の下面に位置する部分は、メタライズ層2aと同様の方法で絶縁基板1に形成される。また、配線導体3のうち絶縁層を厚み方向に貫通する部分は、貫通導体2bと同様の方法で形成することができる。   The wiring conductor 3 is also made of the same metal material as that of the metallized layer 2a and the through conductor 2b, and portions located between the insulating layers and on the lower surface of the insulating substrate 1 are formed on the insulating substrate 1 in the same manner as the metallized layer 2a. The Moreover, the part which penetrates an insulating layer in the thickness direction among the wiring conductors 3 can be formed by the same method as the penetration conductor 2b.

貫通導体2bの外部電気回路への接続は、配線導体3を介して行なう方法に限らず、貫通導体2bを外部電気回路に直接接続するような方法でもよい。例えば、貫通導体2bの長さを、絶縁基板1を厚み方向に貫通する程度にして、電極パッド2を構成しているのと反対側の端面を絶縁基板1の下面等に露出させ、この露出させた端面を外部電気回路にはんだや導電性接着剤等で接続するようにしてもよい。   The connection of the through conductor 2b to the external electric circuit is not limited to the method performed via the wiring conductor 3, but may be a method of directly connecting the through conductor 2b to the external electric circuit. For example, the length of the penetrating conductor 2b is set so as to penetrate the insulating substrate 1 in the thickness direction, and the end surface opposite to that constituting the electrode pad 2 is exposed on the lower surface of the insulating substrate 1, etc. You may make it connect the made end surface to an external electric circuit with a solder, a conductive adhesive, etc.

また、本発明の電子部品搭載用基板9は、上記構成において、貫通導体2bおよびメタライズ層2aがそれぞれガラス成分を含有しており、貫通導体2bのガラス成分含有量が、メタライズ層2aのガラス成分含有量より多い場合には、電極パッド2を構成する貫通導体2bおよびメタライズ層2aのうち、絶縁基板1(絶縁層)により周囲を囲まれて、絶縁層との間で熱応力等の応力がより大きく作用しやすい貫通導体2bにおいて、ガラス成分の添加による、絶縁層との熱膨張率の差を低減する効果をより大きく得ることができる。そのため、例えば熱応力による貫通導体2bのクラック等の不具合をより効果的に抑制して、電極パッド2としての絶縁基板1に対する被着の強度を高めることができる。   In the electronic component mounting substrate 9 of the present invention, the through conductor 2b and the metallized layer 2a each contain a glass component, and the glass component content of the through conductor 2b is the glass component of the metallized layer 2a. In the case where the content is larger than the content, among the through conductor 2b and the metallized layer 2a constituting the electrode pad 2, the periphery is surrounded by the insulating substrate 1 (insulating layer), and stress such as thermal stress is generated between the insulating layer 1 and the insulating layer. In the through conductor 2b that is more likely to act, the effect of reducing the difference in coefficient of thermal expansion from the insulating layer due to the addition of the glass component can be further increased. For this reason, for example, defects such as cracks in the through conductor 2b due to thermal stress can be more effectively suppressed, and the strength of deposition on the insulating substrate 1 as the electrode pad 2 can be increased.

また、金属端子13との接続面積が比較的大きいメタライズ層2aにおけるガラス成分含有量が少ないので、金属端子13と電極パッド2との間の、例えば超音波圧着による接合の強度を高める上で有効である。   Further, since the glass component content in the metallized layer 2a having a relatively large connection area with the metal terminal 13 is small, it is effective in increasing the strength of bonding between the metal terminal 13 and the electrode pad 2 by, for example, ultrasonic pressure bonding. It is.

また、金属端子13との接続面積が比較的大きいメタライズ層2aにおけるガラス成分含有量が少ないので、金属端子13と電極パッド2との間の、例えば超音波圧着や溶融接合をより強固なものとする上で有効である。   Further, since the glass component content in the metallized layer 2a having a relatively large connection area with the metal terminal 13 is small, for example, ultrasonic bonding or fusion bonding between the metal terminal 13 and the electrode pad 2 is made stronger. It is effective in doing.

メタライズ層2aおよび貫通導体2bに添加するガラス成分としては、絶縁基板1の絶縁層を構成するガラスセラミックスに含有されるガラス成分と同様のガラス成分を用いることができる。例えば、ガラスセラミックスがホウケイ酸系のガラス成分を含有するものであれば、ホウケイ酸ガラスや、ホウケイ酸ガラスに酸化リチウム等のアルカリ金属の酸化物系ガラス成分等を添加したガラス成分等を用いるようにすればよい。   As the glass component to be added to the metallized layer 2a and the through conductor 2b, the same glass component as the glass component contained in the glass ceramic constituting the insulating layer of the insulating substrate 1 can be used. For example, if the glass ceramic contains a borosilicate glass component, a borosilicate glass or a glass component obtained by adding an alkali metal oxide glass component such as lithium oxide to the borosilicate glass is used. You can do it.

また、メタライズ層2aおよび貫通導体2bに添加するガラス成分の添加量としては、例えばメタライズ層2aにおいて1〜4質量%程度とし、貫通導体2bにおいて2〜4質量%程度とすればよい。   Further, the amount of the glass component added to the metallized layer 2a and the through conductor 2b may be, for example, about 1 to 4% by mass in the metallized layer 2a and about 2 to 4% by mass in the through conductor 2b.

また、この電子部品搭載用基板9は、貫通導体2bがガラス成分(図示せず)を含有しており、そのガラス成分の含有量が、例えば図3(a)および(b)に示すように、貫通導体2bの中央側2baにおいて外周側2bbよりも多い場合には、貫通導体2bについて、ガラス成分を含有させることによって貫通導体2bとなる金属ペーストの焼成時の収縮率をセラミックグリーンシートの収縮率に近付けて、より効果的に貫通導体2bの端部が絶縁基板1の主面から突出することを抑制することができる。図3(a)および(b)は、それぞれ本発明の電子部品搭載用基板9の実施の形態の他の例を示す要部拡大断面図である。図3において図1および図2と同様の部位には同様の符号を付している。   Further, in this electronic component mounting board 9, the through conductor 2b contains a glass component (not shown), and the content of the glass component is, for example, as shown in FIGS. 3 (a) and 3 (b). When the center side 2ba of the through conductor 2b is larger than the outer peripheral side 2bb, the shrinkage rate of the ceramic green sheet when the metal paste serving as the through conductor 2b is fired by adding a glass component to the through conductor 2b is reduced. It is possible to suppress the end portion of the through conductor 2b from protruding from the main surface of the insulating substrate 1 more effectively. FIGS. 3A and 3B are enlarged cross-sectional views of main parts showing another example of the embodiment of the electronic component mounting board 9 of the present invention. In FIG. 3, the same parts as those in FIGS. 1 and 2 are denoted by the same reference numerals.

また、ガラス成分の含有量は貫通導体2bの外周側2bbでは少ないので、貫通導体2bとしての電気抵抗を低く抑えることができる。特に、貫通導体2bによって数MHz程度以上の高周波信号が伝送される場合には、いわゆる表皮効果により、主に貫通導体2bの外周側2bbで信号が伝送されるので、信号の伝送に対してガラス成分が妨げになるようなことも有効に抑制することができる。   Further, since the glass component content is small on the outer peripheral side 2bb of the through conductor 2b, the electrical resistance as the through conductor 2b can be kept low. In particular, when a high-frequency signal of about several MHz or more is transmitted by the through conductor 2b, the signal is transmitted mainly on the outer peripheral side 2bb of the through conductor 2b due to a so-called skin effect. It can also be effectively suppressed that the component becomes an obstacle.

この場合には、貫通導体2bの内部は、ガラス成分の含有量が比較的多い中央側2baと、比較的少ない外周側2bbとの2重(2層)構造になっている。   In this case, the inside of the through conductor 2b has a double (two-layer) structure of a center side 2ba having a relatively large glass component content and a relatively small outer peripheral side 2bb.

なお、貫通導体2bについて、中央側2baでガラス成分の含有量を多くする場合は、図3(a)に示すような、貫通導体2bの絶縁基板1の主面側の端部まで中央側2baでガラス成分の含有量を多くした構造に限らず、例えば図3(b)に示すような構造でもよい。図3(b)に示す例では、貫通導体2bの絶縁基板1の主面側の端部において、全域で外周側2bbと同様にガラス成分を少なくしている。図3(a)に示す例は、貫通導体2bの端部の突出をより効果的に抑える上で有利である。また、図3(b)に示す例は、貫通導体2bの端部の突出を抑制しながら、貫通導体2bで構成される電極パッド2と金属端子13との間の接触抵抗等の電気抵抗を低く抑える上で有利である。   In addition, about the penetration conductor 2b, when increasing content of a glass component by center side 2ba, as shown to Fig.3 (a), center side 2ba to the edge part by the side of the main surface of the insulated substrate 1 of the penetration conductor 2b is shown. However, the structure is not limited to the structure in which the content of the glass component is increased, and for example, a structure as shown in FIG. In the example shown in FIG. 3B, the glass component is reduced in the entire region at the end of the through conductor 2b on the main surface side of the insulating substrate 1 in the same manner as the outer peripheral side 2bb. The example shown in FIG. 3A is advantageous in suppressing the protrusion of the end portion of the through conductor 2b more effectively. In the example shown in FIG. 3B, electric resistance such as contact resistance between the electrode pad 2 constituted by the through conductor 2b and the metal terminal 13 is suppressed while suppressing the protrusion of the end portion of the through conductor 2b. It is advantageous to keep it low.

このような、貫通導体2bにおける端部の突出を抑制するために含有させるガラス成分としては、例えば、絶縁基板1の絶縁層を構成するガラスセラミックスに含有されるガラス成分と同様のガラス成分を用いることができる。また、この場合のガラス成分は、結晶成分を含有しない、全体が非晶質であるガラス(非晶質ガラス)を用いる必要がある。   As a glass component to be contained in order to suppress such protrusion of the end portion of the through conductor 2b, for example, a glass component similar to the glass component contained in the glass ceramic constituting the insulating layer of the insulating substrate 1 is used. be able to. Further, as the glass component in this case, it is necessary to use glass (amorphous glass) that does not contain a crystal component and is entirely amorphous.

特に、貫通導体2b(金属ペースト)の収縮率を絶縁基板1(セラミックグリーンシート)の収縮率に近付ける上では、貫通導体2bに含有させるガラス成分(非晶質ガラス)は、中央側2baにおける含有量を12〜30質量%程度とすればよい。また、貫通導体2bの外周側2bbにおけるガラス成分の含有量は、上記のような高周波信号の伝送しやすさを考慮すれば少ない方が好ましいものの、中央側2baとの間で含有量の差が大きくなり過ぎると、収縮率や焼成後の熱膨張率の差等に起因して貫通導体2b内部で熱応力が生じ、微細なクラック等が発生する可能性がある。そのため、貫通導体2bの外周側2bbにおけるガラス成分の含有量は10〜20質量%程度に設定しておくことが好ましい。   In particular, in bringing the shrinkage rate of the through conductor 2b (metal paste) close to the shrinkage rate of the insulating substrate 1 (ceramic green sheet), the glass component (amorphous glass) contained in the through conductor 2b is contained in the central side 2ba. The amount may be about 12 to 30% by mass. In addition, the glass component content on the outer peripheral side 2bb of the through conductor 2b is preferably smaller in consideration of the ease of transmission of the high-frequency signal as described above, but there is a difference in content between the central side 2ba and the central conductor 2ba. If it becomes too large, thermal stress may be generated inside the through conductor 2b due to a difference in shrinkage rate or thermal expansion coefficient after firing, and fine cracks may occur. Therefore, the glass component content on the outer peripheral side 2bb of the through conductor 2b is preferably set to about 10 to 20% by mass.

貫通導体2bについて、ガラス成分の含有量が多い中央側2baと少ない外周側2bbとからなるものとするには、例えば、まず貫通導体2bの外周側2bbとなるガラス成分の含有量が比較的少ない金属ペーストを、セラミックグリーンシートに形成した貫通孔の内側面に、真空吸引を併用したスクリーン印刷法等の方法で塗布し、次に、貫通導体2bの中央側2baとなるガラス成分の含有量が比較的多い金属ペーストを、上記の貫通孔内(塗布した金属ペーストの内側の空いている部分)に充填し、その後に一体焼成するようにすればよい。また、ガラス成分の含有量が比較的多い金属ペーストを充填する工程の後に、それら充填した金属ペーストの表面(露出している端面)にガラス成分の添加量が比較的少ない金属ペーストを塗布すれば、図3(b)に示すような構造の貫通導体2bを形成することができる。   In order for the through conductor 2b to be composed of the central side 2ba having a large glass component content and the outer peripheral side 2bb having a small glass component content, for example, the content of the glass component serving as the outer peripheral side 2bb of the through conductor 2b is first relatively small. The metal paste is applied to the inner surface of the through hole formed in the ceramic green sheet by a method such as screen printing using vacuum suction, and then the content of the glass component that becomes the central side 2ba of the through conductor 2b is A relatively large amount of metal paste may be filled in the above-described through holes (the vacant portion inside the applied metal paste) and then integrally fired. In addition, after the step of filling a metal paste having a relatively high glass component content, if a metal paste having a relatively small amount of glass component is applied to the surface (exposed end face) of the filled metal paste, A through conductor 2b having a structure as shown in FIG. 3B can be formed.

この場合の貫通孔および貫通導体2bの直径も、前述したような約50〜200μm程度であり、中央側2baの直径は例えば約25〜175μmである。貫通導体2bによる数MHz程度の高周波信号の伝送を妨げないようにするためには、ガラス成分の含有量が比較的少ない外周側2bbを、幅が約25μm以上の円環状等にすることが好ましい。   The diameter of the through hole and the through conductor 2b in this case is also about 50 to 200 μm as described above, and the diameter of the central side 2ba is, for example, about 25 to 175 μm. In order not to prevent the transmission of a high frequency signal of about several MHz by the through conductor 2b, the outer peripheral side 2bb having a relatively small glass component content is preferably formed into an annular shape having a width of about 25 μm or more. .

ホウケイ酸系ガラス成分を約30質量%、酸化アルミニウムを約40質量%それぞれ含有し、これに酸化マグネシウムおよび酸化カルシウム等を添加してなる原料粉末をドクターブレード法でシート状に成形してセラミックグリーンシートを作製し、このセラミックグリーンシートを5層積層した後950℃で焼成して、厚みが約0.6mmで、1辺の長さが約12mmの正方形板状の絶縁基板を作製した。   Ceramic green containing about 30% by mass of borosilicate glass component and about 40% by mass of aluminum oxide, and adding raw material powder to which magnesium oxide, calcium oxide, etc. are added to a sheet by the doctor blade method A sheet was prepared, and five layers of this ceramic green sheet were laminated and then fired at 950 ° C. to prepare a square plate-like insulating substrate having a thickness of about 0.6 mm and a side of about 12 mm.

この絶縁基板の上面(主面)の中央部には、直径が約150μmの電極パッドを、互いの隣接間隔を100μmとして10×10(個)の並びに配列して設け、電子部品である半導体素子の下面に設けた電極パッドを対向させて接続できるようにして、試験用の電子部品搭載用基板とした。   In the central part of the upper surface (main surface) of this insulating substrate, electrode pads having a diameter of about 150 μm are arranged in an array of 10 × 10 (pieces) with a spacing of 100 μm between each other, and a semiconductor element which is an electronic component The electrode pads provided on the lower surface of the substrate were connected to face each other so that a test electronic component mounting substrate was obtained.

ここで、それぞれの電極パッドを構成する貫通導体およびメタライズ層はともに銅からなるものとした。電極パッドを構成する貫通導体は、直径が約100μmの円柱状で絶縁層のうち最上層および上から2層目までを連続して厚み方向に貫通し、その端部が約6〜10μmの高さで突出したものとした。また、メタライズ層は、外周の直径が約150μmの円環状であり、貫通導体の外周部に約10μmの幅で被着したものとした。   Here, both the through conductor and the metallized layer constituting each electrode pad were made of copper. The through conductor constituting the electrode pad has a cylindrical shape with a diameter of about 100 μm and continuously penetrates the uppermost layer and the second top layer of the insulating layer in the thickness direction, and the end thereof has a height of about 6 to 10 μm. It was supposed to protrude. In addition, the metallized layer had an annular shape with an outer diameter of about 150 μm, and was applied to the outer peripheral portion of the through conductor with a width of about 10 μm.

貫通導体およびメタライズ層を形成するための金属ペーストは、平均粒径が約5μmの銅粉末にガラス成分としてホウケイ酸系ガラスの粉末を添加し、有機溶剤および有機バインダと混練して作製した。金属ペーストのうち貫通導体用のものにはガラス成分としてホウケイ酸ガラス粉末を約5質量%添加し、メタライズ層用のものには同様のガラス粉末を約2質量%添加した。また、金属ペーストは、バインダの添加量により粘度を190〜210Pa・s(回転式粘度計を用いて剪断速度0.1s−1で測定)に調整した。 The metal paste for forming the through conductor and the metallized layer was prepared by adding a borosilicate glass powder as a glass component to a copper powder having an average particle size of about 5 μm and kneading with an organic solvent and an organic binder. About 5% by mass of borosilicate glass powder as a glass component was added to the metal paste for the through conductor, and about 2% by mass of the same glass powder was added to the metallized layer. The viscosity of the metal paste was adjusted to 190 to 210 Pa · s (measured at a shear rate of 0.1 s −1 using a rotary viscometer) depending on the amount of binder added.

具体的には、まず、セラミックグリーンシートのうち最上層および上から2層目となるものに金型を用いて貫通孔を形成した後、その貫通孔内に金属ペースト(ガラス成分が約5質量%)を充填し、次に、セラミックグリーンシートを、貫通孔が上下に連なるように位置合わせして積層し、そのセラミックグリーンシートの積層体の主面に、上記のパターンでメタライズ層用の金属ペースト(ガラス成分が約2質量%)をスクリーン印刷で印刷した。   Specifically, first, through holes are formed in a ceramic green sheet that is the uppermost layer and the second layer from the top using a mold, and then a metal paste (glass component is about 5 mass by weight) in the through holes. Next, the ceramic green sheets are aligned and laminated so that the through-holes are continuous in the vertical direction, and the metal for the metallization layer in the above pattern is formed on the main surface of the laminate of the ceramic green sheets. The paste (the glass component was about 2% by mass) was printed by screen printing.

また、貫通導体のうち絶縁基板の内部(上から2層目と3層目との層間)に位置する部分から絶縁基板の側面にかけて、貫通導体と同様の金属ペーストを用いて配線導体を形成しておいて、この配線導体のうち絶縁基板の側面に形成した部分を測定用の端子として、電極パッドと電子部品との間の電気的な接続状態を確認できるようにした。   In addition, a wiring conductor is formed using the same metal paste as the through conductor from the portion of the through conductor located inside the insulating substrate (between the second and third layers from the top) to the side surface of the insulating substrate. In this case, the portion of the wiring conductor formed on the side surface of the insulating substrate is used as a measurement terminal so that the electrical connection state between the electrode pad and the electronic component can be confirmed.

そして、電子部品として、シリコン基板下面の電極にはんだボールからなる凸状の金属端子を接合した半導体集積回路素子を準備し、この金属端子を、画像認識装置を用いて電極パッドに対して位置合わせした後、超音波圧着により接続して、接続状態の良否を確認した。接続状態の良否は、配線導体のうち絶縁基板の側面に露出した部分と電子部品の電極との間の電気抵抗を抵抗計で測定して確認した。   As an electronic component, a semiconductor integrated circuit element in which a convex metal terminal made of a solder ball is bonded to an electrode on the lower surface of a silicon substrate is prepared, and the metal terminal is aligned with an electrode pad using an image recognition device. After that, it was connected by ultrasonic pressure bonding, and the quality of the connected state was confirmed. The quality of the connection state was confirmed by measuring the electrical resistance between the portion of the wiring conductor exposed on the side surface of the insulating substrate and the electrode of the electronic component with a resistance meter.

また、比較例として、従来技術による、絶縁基板の主面から貫通導体の端面の全面にかけてメタライズ層が覆ってなる電極パッドを備えた電子部品搭載用基板を、この電極パッド以外は上記と同様の条件で作製して、同様に接続状態の良否を確認した。この比較例においても、貫通導体の端部は絶縁基板の主面から約6〜10μmの高さで突出していた。なお、試験個数は、実施例および比較例ともに100個とした。   Further, as a comparative example, an electronic component mounting board provided with an electrode pad covered with a metallized layer from the main surface of the insulating substrate to the entire end face of the through conductor according to the prior art is the same as described above except for this electrode pad. It produced on condition, and the quality of the connection state was confirmed similarly. Also in this comparative example, the end portion of the through conductor protruded from the main surface of the insulating substrate at a height of about 6 to 10 μm. The number of tests was 100 in both the examples and comparative examples.

その結果、本発明の実施例である電子部品搭載用基板では、電気抵抗が複数の電極パッドの算術平均で約290mΩであり、接続状態が良好であった。これに対して、比較例においては、平均の電気抵抗は実施例と同程度の約290mΩであったものの、2個の電子部品搭載用基板において、金属端子と電極パッドとの若干の位置ずれに起因する電気抵抗の増加(310mΩ程度)の発生が見られた。   As a result, in the electronic component mounting board according to the example of the present invention, the electrical resistance was about 290 mΩ on the arithmetic average of the plurality of electrode pads, and the connection state was good. On the other hand, in the comparative example, the average electrical resistance was about 290 mΩ, which was about the same as that in the example. However, in the two electronic component mounting substrates, there was a slight misalignment between the metal terminal and the electrode pad. The resulting increase in electrical resistance (about 310 mΩ) was observed.

また、比較例においては、約10%の電子部品搭載用基板において、金属端子が電極パッドの表面で滑り、位置合わせに要する時間が1つの電子部品搭載用基板において10秒程度余計に(実施例に比べて約10%多く)かかるものがあった。   In the comparative example, in the electronic component mounting substrate of about 10%, the metal terminal slips on the surface of the electrode pad, and the time required for alignment is about 10 seconds in one electronic component mounting substrate (Example) There was something that took about 10% more.

以上のように、本発明の電子部品搭載用基板によれば、電子部品が備える凸状の金属端子との接続が容易な電極パッドを絶縁基板の主面に設けることが可能であることを確認することができた。   As described above, according to the electronic component mounting board of the present invention, it is confirmed that the electrode pad that can be easily connected to the convex metal terminal included in the electronic component can be provided on the main surface of the insulating substrate. We were able to.

1・・・絶縁基板
2・・・電極パッド
2a・・メタライズ層
2b・・貫通導体
2ba・貫通導体の中央側
2bb・貫通導体の外周側
3・・・配線導体
9・・・電子部品搭載用基板
11・・・電子部品
12・・・電極
13・・・金属端子
DESCRIPTION OF SYMBOLS 1 ... Insulating substrate 2 ... Electrode pad 2a ... Metallization layer 2b ... Through conductor 2ba ... Through conductor central side 2bb ... Through conductor outer periphery 3 ... Wiring conductor 9 ... Electronic component mounting substrate
11 ... Electronic components
12 ... Electrodes
13 ... Metal terminal

Claims (3)

ガラスセラミックスからなる複数の絶縁層が積層されてなる絶縁基板と、該絶縁基板の主面に設けられ、電子部品の電極が凸状の金属端子を介して接続される電極パッドとを備える電子部品搭載用基板であって、前記電極パッドは、前記絶縁基板の内部から前記主面にかけて形成され、端部が前記主面から突出した貫通導体と、前記絶縁基板の主面から前記貫通導体の端面の外周部まで被着されて該外周部に沿って盛り上がっているメタライズ層とからなることを特徴とする電子部品搭載用基板。 An electronic component comprising: an insulating substrate in which a plurality of insulating layers made of glass ceramics are laminated; and an electrode pad provided on the main surface of the insulating substrate and to which an electrode of the electronic component is connected via a convex metal terminal A mounting substrate, wherein the electrode pad is formed from the inside of the insulating substrate to the main surface, and an end portion protrudes from the main surface, and an end surface of the through conductor from the main surface of the insulating substrate An electronic component mounting board comprising: a metallized layer that is deposited up to the outer periphery of the metal and is raised along the outer periphery. 前記貫通導体および前記メタライズ層がそれぞれガラス成分を含有しており、前記貫通導体のガラス成分含有量が、前記メタライズ層のガラス成分含有量より多いことを特徴とする請求項1記載の電子部品搭載用基板。 2. The electronic component mounting according to claim 1, wherein the through conductor and the metallized layer each contain a glass component, and the glass component content of the through conductor is larger than the glass component content of the metallized layer. Substrate. 前記貫通導体がガラス成分を含有しており、該ガラス成分の含有量が、前記貫通導体の中央側において外周側よりも多いことを特徴とする請求項1記載の電子部品搭載用基板。 2. The electronic component mounting substrate according to claim 1, wherein the through conductor contains a glass component, and the content of the glass component is larger at the center side of the through conductor than at the outer peripheral side.
JP2009176057A 2009-01-28 2009-07-29 Electronic component mounting board Expired - Fee Related JP5240724B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009176057A JP5240724B2 (en) 2009-01-28 2009-07-29 Electronic component mounting board

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009016259 2009-01-28
JP2009016259 2009-01-28
JP2009176057A JP5240724B2 (en) 2009-01-28 2009-07-29 Electronic component mounting board

Publications (2)

Publication Number Publication Date
JP2010199534A true JP2010199534A (en) 2010-09-09
JP5240724B2 JP5240724B2 (en) 2013-07-17

Family

ID=42823919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009176057A Expired - Fee Related JP5240724B2 (en) 2009-01-28 2009-07-29 Electronic component mounting board

Country Status (1)

Country Link
JP (1) JP5240724B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003100802A (en) * 2001-09-25 2003-04-04 Kyocera Corp Wiring board
JP2007184314A (en) * 2005-12-30 2007-07-19 Murata Mfg Co Ltd Method for manufacturing ceramic multilayer substrate and ceramic multilayer substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003100802A (en) * 2001-09-25 2003-04-04 Kyocera Corp Wiring board
JP2007184314A (en) * 2005-12-30 2007-07-19 Murata Mfg Co Ltd Method for manufacturing ceramic multilayer substrate and ceramic multilayer substrate

Also Published As

Publication number Publication date
JP5240724B2 (en) 2013-07-17

Similar Documents

Publication Publication Date Title
JP4404139B2 (en) Multilayer substrate, electronic device, and method of manufacturing multilayer substrate
JP5823043B2 (en) Electronic device mounting substrate, electronic device, and imaging module
WO2014115766A1 (en) Package for electronic element mounting, electronic device, and imaging module
JP6140834B2 (en) Wiring board and electronic device
JP6133901B2 (en) Wiring board, electronic device and light emitting device
JP6030370B2 (en) Wiring board and electronic device
CN109075133A (en) Electro part carrying substrate, electronic device and electronic module
JP5848901B2 (en) Wiring board
JP5240724B2 (en) Electronic component mounting board
JP6780996B2 (en) Wiring boards, electronics and electronic modules
JP2015122351A (en) Electronic component loading substrate and circuit board
JP2011049342A (en) Substrate for mounting electronic component, and method for manufacturing the same
JP6250943B2 (en) Wiring board
JP6959785B2 (en) Circuit boards, electronic components and electronic modules
JP2001102502A (en) Package for housing image sensor element
JP2011176020A (en) Multi-piece wiring board and method of manufacturing the same
JP2015012157A (en) Wiring board and electronic device
JP6245086B2 (en) Package and package manufacturing method
JP2009212420A (en) Wiring board
JP6441696B2 (en) Wiring board, electronic device and electronic module
JP2015050313A (en) Wiring board and electronic device
JP2004281471A (en) Wiring board
JP2013115123A (en) Wiring board and manufacturing method therefor
JP2013048228A (en) Electronic component mounting substrate, electronic system, and method for manufacturing electronic component mounting substrate
JP2012015172A (en) Electronic component encapsulating substrate and manufacturing method thereof

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120116

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120515

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120522

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120719

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130226

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130326

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160412

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5240724

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees