JP2010198674A - Magnetic recording medium and method for manufacturing magnetic recording medium - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a magnetic recording medium which prevents deterioration of magnetic characteristics by enhancing accuracy of a sectional shape (shape in depth direction) of a magnetic recording part, and to provide a method for manufacturing the same. <P>SOLUTION: The magnetic recording mediums 100 and 200 each include: a magnetic recording part 140, and a non-recording part 150 of a predetermined pattern in an in-plane direction of a magnetic recording layer 122. The non-recording part 150 includes a non-hard magnetic layer 136 and a non-magnetic layer 138 formed on the non-hard magnetic layer 136. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to a magnetic recording medium mounted on an HDD (hard disk drive) or the like and a method for manufacturing the magnetic recording medium.

  Various information recording techniques have been developed with the recent increase in information processing capacity. In particular, the surface recording density of HDDs using magnetic recording technology continues to increase at an annual rate of about 100%. Recently, an information recording capacity exceeding 200 GB is required for a 2.5 inch diameter magnetic disk used for HDDs and the like, and in order to meet such a demand, per square inch. It is required to realize an information recording density exceeding 400 GB.

  In recent years, a perpendicular magnetic recording type magnetic disk (perpendicular magnetic recording disk) has been proposed in order to achieve a high recording density in a magnetic disk used for an HDD or the like. In the conventional in-plane magnetic recording method, the easy axis of magnetization of the magnetic recording layer is aligned in the plane direction of the substrate surface, but in the perpendicular magnetic recording method, the easy magnetization axis is adjusted to be aligned in the direction perpendicular to the substrate surface. ing. The perpendicular magnetic recording method is more suitable for increasing the recording density because the thermal fluctuation phenomenon can be more suppressed during high-density recording than the in-plane recording method.

  In addition, as a technology that improves recording density and thermal fluctuation resistance, discrete track media and other patterns that prevent interference between adjacent recording tracks by patterning non-magnetic tracks in parallel between recording magnetic tracks can be used. A magnetic recording medium called a bit pattern medium that is artificially regularly arranged has been proposed.

  Patterned media such as the discrete track media and bit pattern media described above can be made non-magnetic or amorphous by partially implanting ions after forming a magnetic recording layer on a non-magnetic substrate. After forming a magnetic recording layer on a nonmagnetic substrate (for example, Patent Document 1) or forming a magnetic recording layer on a nonmagnetic substrate, the magnetic recording layer is partially etched to form irregularities. A technique (for example, Patent Document 2) that forms a magnetic pattern by physically dividing a magnetic recording layer has been proposed.

  Specifically, first, a resist is formed on the magnetic recording layer, and a stamper on which a desired uneven pattern is formed is imprinted to transfer the uneven pattern to the resist, or a photoresist is applied on the magnetic recording layer. A desired concavo-convex pattern is formed on a photoresist by photolithography. Then, ions are implanted into the magnetic recording layer through the formed concave portion, or the magnetic recording layer exposed on the surface of the concave portion is ion milled by IBE (Ion Beam Etching: ion beam etching). Divide the recording layer.

Japanese Patent Laid-Open No. 5-205257 JP 2006-012285 A

  However, ion implantation is not performed only in the concave portion of the resist, and ions are dispersed at other positions. In order to sufficiently divide the magnetic recording layer, a large amount of ions must be implanted, which may deteriorate the characteristics of the magnetic recording portion.

  Also, when the magnetic recording layer is removed by etching, the magnetic recording layer itself is directly etched (ion milling), so that magnetic recording such as damage to the magnetic recording part due to etching and corrosion due to residual components of the etching gas and etchant are included. There is a risk of deteriorating the characteristics of the part.

  In view of such problems, the present invention provides a magnetic recording medium and a magnetic recording medium capable of preventing deterioration of magnetic characteristics by improving the accuracy of the cross-sectional shape (shape in the depth direction) of the magnetic recording portion. An object is to provide a manufacturing method.

  In order to solve the above problems, a typical configuration of a magnetic recording medium according to the present invention has a magnetic recording portion and a non-recording portion of a predetermined pattern in the in-plane direction of the magnetic recording layer, and the non-recording portion is It consists of a non-hard magnetic layer and a non-magnetic layer formed on the non-hard magnetic layer.

  The non-hard magnetic layer may be formed by ion implantation, and the non-magnetic layer may be formed by filling.

  With this configuration, it is possible to suppress the dispersion of ions caused by ion implantation and to reduce damage to the magnetic recording portion caused by etching. Thereby, the precision of the cross-sectional shape (shape in the depth direction) of the magnetic recording portion can be improved, and the deterioration of the magnetic characteristics can be prevented.

  The magnetic recording part is provided on a granular magnetic recording layer in which a grain boundary part made of a nonmagnetic substance is formed between crystal grains grown in a columnar shape, and on the granular magnetic recording layer. And a magnetically continuous auxiliary recording layer, and the non-magnetic layer of the non-recording part may divide the auxiliary recording layer of the adjacent magnetic recording part. As a result, the magnetic continuity between adjacent magnetic recording portions can be reliably divided, so that the SN ratio (Signal-Noise Ratio) can be improved.

  In order to solve the above-described problems, a typical configuration of a method for manufacturing a magnetic recording medium according to the present invention includes an etching process in which a magnetic recording layer is etched with a predetermined pattern, and ion implantation is performed with the predetermined pattern. Both ion implantation processes are performed.

  With this configuration, the magnetic recording portion can be reliably divided, and the tact time can be shortened as compared with the case where the ion implantation and etching processes are used alone, and therefore the productivity in the entire manufacturing process is improved. Can do.

  The magnetic recording layer is provided on a granular magnetic recording layer in which a grain boundary portion made of a non-magnetic substance is formed between crystal grains grown in a columnar shape, and on the granular magnetic recording layer. The auxiliary recording layer is magnetically continuous, and the etching step may be performed until the auxiliary recording layer is divided.

  The above-described components based on the technical idea of the magnetic recording medium and the description thereof can be applied to the method of manufacturing the magnetic recording medium.

  According to the present invention, it is possible to provide a magnetic recording medium and a method of manufacturing the magnetic recording medium that prevent deterioration of magnetic characteristics by improving the accuracy of the cross-sectional shape (shape in the depth direction) of the magnetic recording portion. .

1 is a cross-sectional view of a discrete track medium as a magnetic recording medium according to a first embodiment. It is explanatory drawing for demonstrating the magnetic track pattern formation process of the discrete track media concerning 1st Embodiment. It is sectional drawing of the bit pattern medium as a magnetic recording medium concerning 2nd Embodiment. It is explanatory drawing for demonstrating the bit pattern formation process of the bit pattern media concerning 2nd Embodiment.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The dimensions, materials, and other specific numerical values shown in the embodiment are merely examples for facilitating understanding of the invention, and do not limit the present invention unless otherwise specified. In the present specification and drawings, elements having substantially the same function and configuration are denoted by the same reference numerals, and redundant description is omitted, and elements not directly related to the present invention are not illustrated. To do.

(First embodiment)
FIG. 1 is a cross-sectional view of a discrete track medium 100 (Discrete Truck Recording Medium; hereinafter abbreviated as DTR medium) as a magnetic recording medium according to the first embodiment.

  The discrete track medium 100 includes a disk substrate 110, an adhesion layer 112, a first soft magnetic layer 114a, a spacer layer 114b, a second soft magnetic layer 114c, a pre-underlayer 116, a first underlayer 118a, a second underlayer 118b, The magnetic granular layer 120, the magnetic recording layer 122, the auxiliary recording layer 124, the protective layer 126, and the lubricating layer 128 are included.

  The magnetic recording layer 122 and the auxiliary recording layer 124 include a magnetic recording unit 140 and a non-recording unit 150. The non-recording portion 150 includes a non-hard magnetic layer 136 and a non-magnetic layer 138 formed thereon.

  The first soft magnetic layer 114a, the spacer layer 114b, and the second soft magnetic layer 114c together constitute the soft magnetic layer 114. The first base layer 118a and the second base layer 118b together constitute the base layer 118.

  Hereinafter, the configuration of each layer will be described in detail while explaining the manufacturing process of the DTR media 100 of the present embodiment.

[Substrate molding process]
As the disk substrate 110, a glass disk obtained by forming amorphous aluminosilicate glass into a disk shape by direct pressing can be used. The type, size, thickness, etc. of the glass disk are not particularly limited. Examples of the material of the glass disk include aluminosilicate glass, soda lime glass, soda aluminosilicate glass, aluminoborosilicate glass, borosilicate glass, quartz glass, chain silicate glass, or glass ceramic such as crystallized glass. It is done. The glass disk is subjected to grinding, polishing, and chemical strengthening sequentially to obtain a smooth non-magnetic disk base 110 made of a chemically strengthened glass disk.

[Film formation process]
By depositing the film on the disk substrate 110 obtained in the above-described process by the DC magnetron sputtering method, the adhesion layer 112, the soft magnetic layer 114, the pre-underlayer 116, the underlayer 118, the nonmagnetic granular layer 120, the magnetic layer. The recording layer 122 and the auxiliary recording layer 124 can be formed. The protective layer 126 can be formed by a CVD method. Note that it is also preferable to use an in-line film forming method in terms of high productivity.

  The adhesion layer 112 was formed using a Ti alloy target so as to be a 5 nm Ti alloy layer. By forming the adhesion layer 112, the adhesion between the disk substrate 110 and the soft magnetic layer 114 can be improved, so that the soft magnetic layer 114 can be prevented from peeling off. As a material of the adhesion layer 112, for example, a CrTi alloy can be used. From the practical viewpoint, the thickness of the adhesion layer is preferably 1 nm to 50 nm.

  The soft magnetic layer 114 includes AFC (Antiferro-magnetic exchange coupling) by interposing a nonmagnetic spacer layer 114b between the first soft magnetic layer 114a and the second soft magnetic layer 114c. It was configured as follows. Thereby, the magnetization direction of the soft magnetic layer 114 can be aligned along the magnetic path (magnetic circuit) with high accuracy, and noise generated from the soft magnetic layer 114 can be reduced. Specifically, the composition of the first soft magnetic layer 114a and the second soft magnetic layer 114c was CoCrFeB, and the composition of the spacer layer 114b was Ru (ruthenium).

  The pre-underlayer 116 has a function of protecting the soft magnetic layer 114 and a function of promoting alignment of crystal grain orientations of the underlayer 118. The material of the orientation control layer can be selected from Ni, Cu, Pt, Pd, Zr, Hf, and Nb. Furthermore, it is good also as an alloy which contains these metals as a main component and contains any one or more additional elements of Ti, V, Ta, Cr, Mo, and W. For example, NiW, CuW, or CuCr can be suitably selected.

  The underlayer 118 has an hcp structure, and the crystal of the hcp structure of the magnetic recording layer 122 can be grown as a granular structure. Therefore, the higher the crystal orientation of the underlayer 118, the more the orientation of the magnetic recording layer 122 can be improved. The material of the underlayer can be selected from RuCr and RuCo in addition to Ru. Ru has an hcp structure and can satisfactorily orient a magnetic recording layer containing Co as a main component.

  The underlayer 118 has a two-layer structure made of Ru. When forming the second base layer 118b on the upper layer side, the Ar gas pressure is set higher than when forming the first base layer 118a on the lower layer side. When the gas pressure is increased, the mean free path of the sputtered particles is shortened, so that the film formation rate is decreased and the crystal orientation can be improved. Further, by increasing the pressure, the size of the crystal lattice is reduced. Since the size of the Ru crystal lattice is larger than that of the Co crystal lattice, if the Ru crystal lattice is made smaller, it approaches that of Co, and the crystal orientation of the Co granular layer can be further improved.

The non-magnetic granular layer 120 forms a non-magnetic granular layer on the hcp crystal structure of the underlayer 118, and grows the granular layer of the magnetic recording layer 122 thereon, whereby the magnetic granular layer is formed in an initial stage ( It has the effect of separating from the rising). The composition of the non-magnetic granular layer 120 was non-magnetic CoCr—SiO ₂ .

  The magnetic recording layer 122 has a columnar granular structure in which a nonmagnetic substance is segregated around magnetic grains of a hard magnetic material selected from a Co-based alloy, an Fe-based alloy, and a Ni-based alloy to form a grain boundary. It is a magnetic layer. By providing the nonmagnetic granular layer 120, the magnetic grains can be continuously epitaxially grown from the granular structure. Since the first embodiment is the DTR media 100, the signal-noise ratio (SNR) can be improved by the configuration in which the magnetic recording layer 122 has a granular structure.

  The auxiliary recording layer 124 is a layer magnetically continuous in the in-plane direction formed on the magnetic recording layer 122 having a granular structure. By providing the auxiliary recording layer 124, in addition to the high density recording property and low noise property of the magnetic recording layer 122, it is possible to improve the reverse domain nucleation magnetic field Hn, improve the heat-resistant fluctuation characteristic, and improve the overwrite characteristic. .

  In the present embodiment, in order to simplify the manufacturing process, the protective layer 126 is formed after the magnetic track pattern forming process, which will be described later. However, in order to reduce contamination in the manufacturing process, auxiliary recording is performed. The protective layer 126 may be formed after the layer 124 is formed.

[Magnetic track pattern formation process]
Next, the process of forming the magnetic recording portion 140 and the non-recording portion 150 that are magnetically separated in the magnetic recording layer 122 of this embodiment will be described in detail. FIG. 2 is an explanatory diagram for explaining a magnetic track pattern forming process of the DTR media 100 according to the first embodiment. The magnetic track pattern forming process includes a resist layer film forming process, a patterning process, an etching process, an ion implantation process, a filling process, and a removing process. Hereinafter, each process in the magnetic track pattern forming process will be described. In FIG. 2, the description of the layer closer to the disk substrate 110 than the nonmagnetic granular layer 120 is omitted for easy understanding.

<Resist layer formation process>
As shown in FIG. 2A, a resist layer 162 is formed on the auxiliary recording layer 124 by using a spin coating method. As the resist layer 162, SOG (Spin On Glass) mainly composed of silica, a general novolac-based photoresist, or the like can be suitably used.

<Patterning process>
As shown in FIG. 2B, the magnetic track pattern is transferred by impressing the stamper 160 against the resist layer 162 (imprint method). The stamper 160 includes a track portion as a recording area to be transferred, a servo pattern portion for storing servo information such as a preamble portion, an address portion, and a burst portion, and a block portion that separates the track portion and the servo pattern portion. And a concavo-convex pattern (pattern of the magnetic recording part 140 and the non-recording part 150) corresponding to the respective patterns.

  After the magnetic track pattern is transferred to the resist layer 162 by the stamper 160, the stamper 160 is removed from the resist layer 162, whereby an uneven pattern (pattern of the magnetic recording portion 140 and the non-recording portion 150) is formed on the resist layer 162. Further, it is preferable that a fluorine-based release agent is applied to the surface of the stamper 162. This makes it possible to peel the stamper 160 from the resist layer 162 satisfactorily.

  In the present embodiment, the patterning step uses an imprint method using the stamper 162, but a photolithography method can also be suitably used. However, when using the photolithography method, in the resist layer film forming step, the photoresist is formed as a resist layer, and the formed photoresist is exposed and developed using a mask to form a magnetic track portion. The predetermined pattern is transferred.

<Etching process>
As shown in FIG. 2C, IBE (Ion Beam Etching) using Ar until the auxiliary recording layer 124 is divided from the concave portion of the resist layer 162 patterned into a predetermined pattern in the patterning step. By performing ion milling)), a convex portion and a concave portion of a predetermined pattern are formed. As a result, the magnetic continuity between adjacent magnetic recording portions can be reliably divided, so that the SN ratio (Signal-Noise Ratio) can be improved. Further, corrosion inside the magnetic recording layer 122 due to the residual components of the etching gas and the etching solution can be prevented. In addition, the recessed part cross section which performed IBE becomes a trapezoid shape in general.

  As an IBE plasma source, ECR plasma can be suitably used. However, an ICP capable of generating high-density plasma at a low pressure or a general parallel plate RIE apparatus can also be used. In ion milling using an ECR ion gun, it is possible to perform processing without providing a taper on the concave and convex portions formed in the magnetic recording layer 122 by etching with a stationary facing type (ion incident angle of 90 °).

<Ion implantation process>
As shown in FIG. 2D, when ions are implanted into the magnetic recording layer 122 from the recesses of the resist layer 162 and the auxiliary recording layer 124 that have been divided into a predetermined pattern by the above etching process, It is possible to structurally destroy and separate the circular area in which is dispersed. Thereby, the non-hard magnetic layer 136 is formed. The non-hard magnetic layer 136 preferably has a certain degree of magnetism (relative magnetic permeability μ = 2 to about 100). This is because the overwrite characteristic and the electromagnetic conversion characteristic can be improved.

  As ions to be implanted, one or more of Ar, N, and O can be used. As other ions, any one or more selected from the group consisting of B, P, Si, F, C, In, Bi, Kr, Ar, Xe, W, As, Ge, Mo, Sn, N, and O May be implanted.

<Filling process>
As shown in FIG. 2E, a nonmagnetic layer 138 is filled on the nonhard magnetic layer formed by the ion implantation process. As the nonmagnetic layer 138, SiO ₂ , SiOC, TiO ₂ , and C can be used. The nonmagnetic layer 138 is filled by sputtering without applying a bias. Here, when a bias sputtering method is used in which sputtering is performed while biasing the substrate, the recess can be easily filled with the nonmagnetic layer 138. However, the substrate temperature rises by applying the bias voltage and the substrate accompanying this Therefore, a sputtering method in which no bias is applied is preferable.

<Removal process>
As shown in FIG. 2F, the resist layer 162 is removed by RIE (Reactive Ion Etching) using a fluorine-based gas. In the present embodiment, SF ₆ is used as an etching gas, but the present invention is not limited to this, and any one or a plurality of mixed gases selected from the group consisting of CF ₄ , CHF ₃ , and C ₂ F ₆ are also suitable. Can be used.

  In this embodiment, since SOG is used as the resist layer 162, etching is performed using a fluorine-based gas, but it goes without saying that the type of gas is appropriately changed depending on the material of the resist layer 162. For example, when a novolak photoresist is used as the resist layer 162, RIE using oxygen gas is preferable.

  In this embodiment, the RIE plasma source uses ICP (Inductively Coupled Plasma) capable of generating high-density plasma at a low pressure. However, the present invention is not limited to this, and ECR (Electron Cyclotron Resonance) plasma, A parallel plate RIE apparatus can also be used.

  The magnetic track pattern forming process according to the present embodiment has been described above. However, the order of the etching process, the ion implantation process, the filling process, and the like is not limited to the above-described embodiment, and can be changed as appropriate. . For example, the filling process may be performed before the ion implantation process, or the ion implantation process may be performed before the etching process.

  According to the track pattern forming step, the tact time can be shortened by using both the ion implantation step and the etching step as compared with the case where they are used alone. Furthermore, considering the cross-sectional shape by etching and the circular ion dispersion range by ion implantation, by using both processes in combination, the accuracy of the cross-sectional shape (shape in the depth direction) of the magnetic recording unit 140 is improved. Deterioration of magnetic properties can be prevented.

[Protective layer / lubricating layer deposition process]
The protective layer 126 can be formed by depositing carbon by a CVD method while maintaining a vacuum. The protective layer 126 is a layer for protecting the magnetic recording layer 122 from the impact of the magnetic head. In general, carbon deposited by the CVD method has improved film hardness as compared with that deposited by the sputtering method, so that the magnetic recording layer 122 can be more effectively protected against the impact from the magnetic head.

  The lubricating layer 128 can be formed of PFPE (perfluoropolyether) by dip coating. PFPE has a long chain molecular structure and binds with high affinity to N atoms on the surface of the protective layer 126. Due to the action of the lubricating layer 128, even if the magnetic head comes into contact with the surface of the DTR media 100, damage or loss of the protective layer 126 can be prevented.

  As described above, according to the present embodiment, it is possible to provide the DTR media 100 that can improve the accuracy of the cross-sectional shape (the shape in the depth direction) of the magnetic recording portion and prevent the deterioration of the magnetic characteristics.

(Second Embodiment)
FIG. 3 is a cross-sectional view of a bit pattern medium 200 as a magnetic recording medium according to the second embodiment. The bit pattern medium 200 includes a magnetic recording unit 240 and a non-recording unit 250. Note that the formation interval between the magnetic recording portion 240 and the non-recording portion 250 of the bit pattern media 200 is narrower than that of the DTR media 100 in order to achieve high density.

  The magnetic recording unit 240 includes a disk substrate 110, an adhesion layer 112, a first soft magnetic layer 114a, a spacer layer 114b, a second soft magnetic layer 114c, a pre-underlayer 116, a first underlayer 118a, a second underlayer 118b, and a magnetic layer. The recording layer 122, the protective layer 126, and the lubricating layer 128 are included. Further, the non-recording portion 250 includes the disk substrate 110, the adhesion layer 112, the first soft magnetic layer 114a, the spacer layer 114b, the second soft magnetic layer 114c, the pre-underlayer 116, the first underlayer 118a, and the second underlayer 118b. , A non-hard magnetic layer 136, a non-magnetic layer 138, a protective layer 126, and a lubricating layer 128.

  In the case of the DTR medium 100, even if the auxiliary recording layer 124 is divided by the non-recording portion 140 (concave portion), it is continuous in the track direction. For this reason, the auxiliary recording layer 124 is magnetically continuous over the magnetic particles adjacent in the track direction, and can serve as the auxiliary recording layer 124. However, in the bit pattern medium 200 according to the present embodiment, the auxiliary recording layer 124 and the magnetic recording layer 122 are divided in units of recording bits, and therefore it is not always necessary to install the auxiliary recording layer and form a granular structure. Therefore, in this embodiment, the nonmagnetic granular layer 120 and the auxiliary recording layer 124 are omitted. Of course, the nonmagnetic granular layer 120 and the auxiliary recording layer 124 may be provided as appropriate.

  Hereinafter, the configuration of each layer will be described in detail while explaining the manufacturing process of the bit pattern media 200 of the present embodiment. In the present embodiment, those having substantially the same functions and configurations as the above-described elements are denoted by the same reference numerals, and redundant description is omitted.

  The bit pattern media 200 is manufactured through the above-described substrate molding process, film forming process, bit pattern forming process described later, and protective layer / lubricating layer film forming process. Hereinafter, a bit pattern forming process different from the manufacturing process of the DTR media 100 will be described in detail.

[Bit pattern formation process]
The process of forming the magnetic recording part 240 and the non-recording part 250 magnetically separated in the magnetic recording layer 122 of this embodiment will be described in detail. FIG. 4 is an explanatory diagram for explaining a bit pattern forming process of the bit pattern media according to the second embodiment. The bit pattern forming process includes a resist layer forming process, a patterning process, an etching process, an ion implantation process, a filling process, and a removing process. In FIG. 4, the description of the layers closer to the disk substrate 110 than the magnetic recording layer 122 is omitted for easy understanding.

<Resist layer formation process>
As shown in FIG. 4A, a resist layer 162 is formed on the magnetic recording layer 122 by using a spin coating method. As the resist layer 162, SOG (Spin On Glass) mainly composed of silica, a general novolac-based photoresist, or the like can be suitably used.

<Patterning process>
As shown in FIG. 4B, the stamper 160 is pressed against the resist layer 162 to transfer the pattern (imprint method). The stamper 160 has a concavo-convex pattern corresponding to the magnetic recording portion 240 and the non-recording portion 250 to be transferred. In the present embodiment, the patterning step uses an imprint method using the stamper 162, but a photolithography method can also be suitably used.

<Etching process>
As shown in FIG. 4C, IBE (Ion Beam Etching) using Ar is performed from the recesses of the resist layer 162 patterned into a predetermined pattern in the patterning step. At this time, the magnetic recording layer 122 may not be sufficiently divided as the non-recording portion 250 is miniaturized.

<Ion implantation process>
As shown in FIG. 4D, ions are implanted from the recesses of the resist layer 162 and the magnetic recording layer 122 that have been divided into a predetermined pattern by the etching process, using an ion beam method. Thereby, the magnetic recording layer 122 that is magnetically continuous in the in-plane direction at the position of the non-recording portion 250 can be structurally broken to form the non-hard magnetic layer 136.

<Filling process>
As shown in FIG. 4E, a nonmagnetic layer 138 is filled on the nonhard magnetic layer 136 formed by the ion implantation process. As the nonmagnetic layer 138, SiO ₂ , SiOC, TiO ₂ , and C can be used.

<Removal process>
As shown in FIG. 4F, the resist layer 162 is removed by RIE (Reactive Ion Etching) using a fluorine-based gas. In the present embodiment, SF ₆ is used as an etching gas, but the present invention is not limited to this, and any one or a plurality of mixed gases selected from the group consisting of CF ₄ , CHF ₃ , and C ₂ F ₆ are also suitable. Can be used.

  The bit pattern forming process according to the present embodiment has been described above. However, the order of the etching process, the ion implantation process, the filling process, and the like is not limited to the above embodiment, and can be changed as appropriate. For example, the filling process may be performed before the ion implantation process, or the ion implantation process may be performed before the etching process.

  According to the bit pattern formation process, the magnetic recording layer can be sufficiently divided by using both processes in consideration of the cross-sectional shape of etching and the circular ion dispersion range by ion implantation. It is possible to form a bit pattern and realize further higher density of the bit pattern media.

  As mentioned above, although preferred embodiment of this invention was described referring an accompanying drawing, it cannot be overemphasized that this invention is not limited to the example which concerns. It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the claims, and these are naturally within the technical scope of the present invention. Understood.

  The present invention can be used as a method of manufacturing a magnetic recording medium mounted on a magnetic recording type HDD or the like and as a magnetic recording medium.

DESCRIPTION OF SYMBOLS 100 ... Discrete track medium 110 ... Disc base | substrate 112 ... Adhesion layer 114 ... Soft-magnetic layer 114a ... 1st soft-magnetic layer 114b ... Spacer layer 114c ... 2nd soft-magnetic layer 116 ... Pre-underlayer 118 ... Underlayer 118a ... 1st bottom Base layer 118b ... second underlayer 120 ... nonmagnetic granular layer 122 ... magnetic recording layer 124 ... auxiliary recording layer 126 ... protective layer 128 ... lubricating layer 136 ... non-hard magnetic layer 138 ... non-magnetic layers 140, 240 ... magnetic recording portion 150 , 250 ... non-recording portion 160 ... stamper 162 ... resist layer 200 ... bit pattern media

Claims (5)

Having a magnetic recording portion and a non-recording portion of a predetermined pattern in the in-plane direction of the magnetic recording layer;
The magnetic recording medium, wherein the non-recording portion includes a non-hard magnetic layer and a non-magnetic layer formed on the non-hard magnetic layer.   The magnetic recording medium according to claim 1, wherein the non-hard magnetic layer is formed by ion implantation, and the non-magnetic layer is formed by filling. The magnetic recording unit is
A magnetic recording layer having a granular structure in which a grain boundary portion made of a nonmagnetic material is formed between crystal grains grown in a columnar shape;
An auxiliary recording layer provided on the granular magnetic recording layer and magnetically continuous in the in-plane direction;
3. The magnetic recording medium according to claim 1, wherein the non-magnetic layer of the non-recording portion divides an auxiliary recording layer of an adjacent magnetic recording portion. An etching process for etching the magnetic recording layer in a predetermined pattern;
A method of manufacturing a magnetic recording medium, comprising performing both ion implantation steps of performing ion implantation in the predetermined pattern. The magnetic recording layer is
A ferromagnetic layer having a granular structure in which a grain boundary portion made of a nonmagnetic substance is formed between crystal grains grown in a columnar shape;
An auxiliary recording layer provided on the ferromagnetic layer of the granular structure and magnetically continuous in the in-plane direction;
The method of manufacturing a magnetic recording medium according to claim 4, wherein the etching step is performed until the auxiliary recording layer is divided.

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