JP2010009710A - Method of manufacturing magnetic recording medium, and magnetic recording medium - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a magnetic recording medium, which easily and reliably remove a resist and forms a magnetic track pattern without damaging a layer exposed to the surface using an easily-releasable layer provided directly under the resist, and to provide the magnetic recording medium. <P>SOLUTION: The method of manufacturing the perpendicular magnetic recording medium 100 includes: forming a magnetic recording layer 122 on a disk substrate 110, forming a protective layer 126 on the magnetic recording layer, forming a release layer 130 on the protective layer, forming a resist layer 132 on the release layer, forming a predetermined pattern while partially changing the thickness of the resist layer by working the resist layer, injecting ions in the magnetic recording layer via the resist layer, and removing the resist layer by removing the release layer with a solvent. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a magnetic recording medium mounted on an HDD (hard disk drive) or the like, and a magnetic recording medium.

  Various information recording techniques have been developed with the recent increase in information processing capacity. In particular, the surface recording density of HDDs using magnetic recording technology continues to increase at an annual rate of about 100%. Recently, an information recording capacity exceeding 160 GB is required for a 2.5-inch diameter magnetic disk used for HDDs and the like, and in order to meet such a demand, per 1 inch. It is required to realize an information recording density exceeding 250 GBit.

  In recent years, a perpendicular magnetic recording type magnetic disk (perpendicular magnetic recording disk) has been proposed in order to achieve a high recording density in a magnetic disk used for an HDD or the like. In the conventional in-plane magnetic recording method, the easy axis of magnetization of the magnetic recording layer is aligned in the plane direction of the substrate surface, but in the perpendicular magnetic recording method, the easy magnetization axis is adjusted to be aligned in the direction perpendicular to the substrate surface. ing. The perpendicular magnetic recording method is more suitable for increasing the recording density because the thermal fluctuation phenomenon can be more suppressed during high-density recording than the in-plane recording method.

  In addition, as a technology that improves recording density and thermal fluctuation resistance, discrete track media and other patterns that prevent interference between adjacent recording tracks by patterning non-magnetic tracks in parallel between recording magnetic tracks can be used. A magnetic recording medium called a bit pattern medium that is artificially regularly arranged has been proposed.

  Patterned media such as the above-described discrete track media and bit pattern media can be made magnetic by forming a magnetic layer on a nonmagnetic substrate and then making ions non-magnetic or amorphous by partially implanting ions. After forming a magnetic layer on a non-magnetic substrate and forming a magnetic layer on a non-magnetic substrate, the magnetic layer is partially milled to form irregularities, and the magnetic layer is physically separated, Techniques for forming magnetic patterns have been proposed.

  Specifically, first, a resist is formed on the magnetic layer, and a stamper on which the desired uneven pattern is formed is imprinted to transfer the uneven pattern to the resist, or a photoresist is formed on the magnetic layer. Then, a desired concavo-convex pattern is formed on the photoresist by photolithography. Then, ions are implanted into the magnetic layer through the formed recess, or the magnetic layer exposed on the surface of the recess is milled by etching to separate the magnetic layer.

  On the other hand, with the increase in the density of magnetic recording technology, the magnetic head has been changed from a thin film head to a magnetoresistive head (MR head) and a large magnetoresistive head (GMR head). The flying height has narrowed to about 5 nm. A magnetic head equipped with such a magnetoresistive element may cause a head crash or a thermal asperity failure as an inherent failure.

  Thermal asperity failure means that the magnetoresistive element is heated by adiabatic compression or contact of air when the magnetic head passes over a minute convex or concave shape on the magnetic disk surface while flying. This is a failure that causes a read error. Therefore, for a magnetic head equipped with a magnetoresistive element, the magnetic disk surface is required to have extremely high smoothness and flatness.

  In the above-described patterned media, when irregularities are physically formed on the magnetic layer by milling, the resist is removed, and the concave portions are filled with a nonmagnetic substance, and then planarized. When the pattern is formed by ion implantation, the resist is removed.

  Here, as described above, in order to create a patterned medium, it is necessary to form a resist film on the magnetic layer. However, after patterning of the magnetic layer is completed, that is, ion implantation and milling are completed. The rest is unnecessary. If unnecessary resist residues remain on the surface of the magnetic layer, the surface of the substrate becomes uneven, which causes head crashes and thermal asperity failures.

Therefore, conventionally, the resist remaining after patterning of the magnetic layer is dry-etched (for example, Patent Document 1), reactive ion etching (for example, Patent Document 2), ion milling, plasma etching (for example, Patent Document 3) and ICP ( A technique for smoothing the surface of a magnetic disk by using inductively coupled plasma (etching) etching is disclosed.
JP 2008-77788 A JP 2006-79805 A JP 2008-16084 A

  However, in the technique of removing the resist remaining after patterning of the magnetic layer described above by etching or the like, the layer immediately below the resist is shaved by excessive etching, or conversely, the layer immediately below the resist is not scraped. Therefore, it is difficult to determine the point at which the etching is optimally stopped, for example, when the etching is completed early and the resist cannot be completely removed.

  In view of such problems, the present invention can easily and reliably remove the resist by newly providing a layer that is easily peeled off immediately below the resist, so that the layer exposed on the surface is not damaged. It is an object of the present invention to provide a method for manufacturing a magnetic recording medium capable of forming a magnetic track pattern and a magnetic recording medium.

  In order to solve the above problems, a typical configuration of a method for manufacturing a magnetic recording medium according to the present invention includes a magnetic recording layer forming step for forming a magnetic recording layer on a substrate, and a magnetic recording layer on the magnetic recording layer. A protective layer forming step for forming a protective layer, a peeling layer forming step for forming a release layer on the protective layer, a resist layer forming step for forming a resist layer on the release layer, and a resist A patterning step of forming a predetermined pattern by partially changing the thickness of the resist layer by processing the layer; an ion implantation step of implanting ions into the magnetic recording layer with the resist layer interposed; and a release layer And a removing step of removing the resist layer by removing the solvent with a solvent.

  With the configuration in which a release layer that can be removed with a solvent is formed immediately below the resist layer, an unnecessary resist layer can be easily and optimally removed after ion implantation for patterning the magnetic recording layer. Therefore, the layer exposed on the surface (protective layer) is not damaged and the resist layer is not left, and the surface can be kept smooth even after ion implantation.

  In addition, since the protective layer is provided between the magnetic recording layer and the release layer, it is possible to prevent the magnetic recording layer from coming into contact with the solvent when removing the release layer with a solvent, which may damage the magnetic recording layer. Can be avoided.

  The release layer is preferably a Cr alloy, more preferably Cr. The release layer is more preferably a nonmagnetic material. Since the Cr alloy and Cr are dissolved in a solvent, they can be easily removed. Further, even if Cr or nonmagnetic Cr alloy remains on the surface of the protective layer, since Sr or nonmagnetic Cr alloy is a nonmagnetic substance, SNR (without affecting the magnetic characteristics of the magnetic recording layer) Signal to Noise Ratio) can be maintained.

In the ion implantation step, one or more selected from the group consisting of B, P, Si, F, C, In, Bi, Kr, Ar, Xe, W, As, Ge, Mo, Sn, and N ₂ May be implanted, preferably either one or both of Ar, N ₂ .

  When oxygen is used as ions to be implanted into the magnetic recording layer, the magnetic recording layer is oxidized, so that the coercive force (Hc) of the inter-magnetic track region is improved, and writing is performed when information is written to the magnetic track portion. Smudge occurs. In other words, when oxygen is used, the magnetic recording layer cannot be made non-magnetic or non-amorphous as in the case of ions implanted in the present invention and cannot be reliably separated magnetically. Can not do it.

  In the ion implantation step, the energy amount for implanting ions may be 50 keV or less. When the amount of energy for ion implantation is 50 keV or more, demagnetization or amorphization of the magnetic recording layer is promoted too much, and the magnetic track portion is demagnetized to deteriorate the overwrite property. .

  The solvent for removing the release layer may be an organic solvent. Organic solvents can be suitably used because they are inexpensive. Moreover, when it is an organic solvent, only Cr can be dissolved suitably.

  The magnetic recording layer may be a granular ferromagnetic layer in which a grain boundary portion made of a nonmagnetic material is formed between crystal grains grown in a columnar shape. When a discrete pattern is formed on the magnetic recording layer, the SNR is improved if the magnetic recording layer has a granular structure.

  In order to solve the above problems, a typical configuration of a magnetic recording medium according to the present invention is characterized by being manufactured using the above-described method for manufacturing a magnetic recording medium.

  The components based on the technical idea of the magnetic recording medium manufacturing method described above and the description thereof can be applied to the magnetic recording medium.

  In order to solve the above-described problems, another typical configuration according to the present invention is a magnetic recording medium including at least a magnetic recording layer, a protective layer, and a lubricating layer in this order on a substrate, and includes a protective layer and a lubricating layer. It is characterized by interposing Cr between them.

  When Cr is present on the surface of the protective layer, the surface energy is improved and the lubricating layer can be suitably formed. Further, when the protective layer is made of COC (Carbon Over Coat), Cr is filled between the carbon C, and the hardness of the protective layer can be improved.

  In the method of manufacturing a magnetic recording medium according to the present invention, a resist layer can be surely removed by newly providing a layer that is easily peeled directly under the resist, and the layer exposed on the surface is not damaged. Further, it is possible to form a magnetic track pattern by improving the smoothness of the layer exposed on the surface.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The dimensions, materials, and other specific numerical values shown in the embodiment are merely examples for facilitating understanding of the invention, and do not limit the present invention unless otherwise specified. In the present specification and drawings, elements having substantially the same function and configuration are denoted by the same reference numerals, and redundant description is omitted, and elements not directly related to the present invention are not illustrated. To do.

(Embodiment)
An embodiment of a method for manufacturing a magnetic recording medium according to the present invention will be described. FIG. 1 is a diagram for explaining the configuration of a discrete type perpendicular magnetic recording medium 100 (hereinafter simply referred to as a perpendicular magnetic recording medium 100) as a magnetic recording medium according to the present embodiment. A perpendicular magnetic recording medium 100 shown in FIG. 1 includes a disk substrate 110 as a substrate, an adhesion layer 112, a first soft magnetic layer 114a, a spacer layer 114b, a second soft magnetic layer 114c, a pre-underlayer 116, and a first underlayer 118a. , A second underlayer 118b, a nonmagnetic granular layer 120, a first magnetic recording layer 122a, a second magnetic recording layer 122b, a continuous layer 124, a protective layer 126, and a lubricating layer 128. The first soft magnetic layer 114a, the spacer layer 114b, and the second soft magnetic layer 114c together constitute the soft magnetic layer 114. The first base layer 118a and the second base layer 118b together constitute the base layer 118. The first magnetic recording layer 122a and the second magnetic recording layer 122b together constitute the magnetic recording layer 122.

  As will be described below, the perpendicular magnetic recording medium 100 shown in the present embodiment includes a plurality of types of oxides (one or both of the first magnetic recording layer 122a and the second magnetic recording layer 122b of the magnetic recording layer 122). Hereinafter, the composite oxide is segregated at the nonmagnetic grain boundaries by containing “composite oxide”.

[Substrate molding process]
As the disk substrate 110, a glass disk obtained by forming amorphous aluminosilicate glass into a disk shape by direct pressing can be used. The type, size, thickness, etc. of the glass disk are not particularly limited. Examples of the material of the glass disk include aluminosilicate glass, soda lime glass, soda aluminosilicate glass, aluminoborosilicate glass, borosilicate glass, quartz glass, chain silicate glass, or glass ceramic such as crystallized glass. It is done. The glass disk is subjected to grinding, polishing, and chemical strengthening sequentially to obtain a smooth non-magnetic disk base 110 made of a chemically strengthened glass disk.

[Film formation process]
On the disk substrate 110 obtained in the above-described substrate molding step, the adhesion layer 112, the soft magnetic layer 114, the pre-underlayer 116, the underlayer 118, the nonmagnetic granular layer 120, and the magnetic recording layer 122 (by the DC magnetron sputtering method). The magnetic recording layer forming step) and the continuous layer 124 can be sequentially formed, and the protective layer 126 (protective layer forming step) can be formed by a CVD method. Note that it is also preferable to use an in-line film forming method in terms of high productivity. Hereinafter, the structure of each layer and the magnetic track pattern forming step including the peeling layer forming step, the resist layer forming step, the patterning step, the ion implantation step, and the removing step, which are features of this embodiment, will be described.

  The adhesion layer 112 is an amorphous underlayer, which is formed in contact with the disk substrate 110 and has a function of increasing the peel strength between the soft magnetic layer 114 and the disk substrate 110 formed thereon. When the disk substrate 110 is made of amorphous glass, the adhesion layer 112 is preferably an amorphous alloy film so as to correspond to the amorphous glass surface. As the adhesion layer 112, for example, a CrTi-based amorphous layer can be selected.

  The soft magnetic layer 114 is a layer that temporarily forms a magnetic path during recording in order to pass magnetic flux in a direction perpendicular to the recording layer in the perpendicular magnetic recording method. The soft magnetic layer 114 is provided with AFC (Antiferro-magnetic exchange coupling) by interposing a nonmagnetic spacer layer 114b between the first soft magnetic layer 114a and the second soft magnetic layer 114c. Can be configured. As a result, the magnetization direction of the soft magnetic layer 114 can be aligned along the magnetic path (magnetic circuit) with high accuracy, and the vertical component of the magnetization direction is extremely reduced, so that noise generated from the soft magnetic layer 114 is reduced. Can do. The composition of the first soft magnetic layer 114a and the second soft magnetic layer 114c is as follows. Co-based alloys such as CoTaZr, Co-Fe based alloys such as CoCrFeB, and Ni-Fe such as [Ni-Fe / Sn] n multilayer structure. A system alloy or the like can be used.

  The pre-underlayer 116 is a non-magnetic alloy layer, and acts to protect the soft magnetic layer 114 and the easy magnetization axis of the hexagonal close packed structure (hcp structure) included in the underlayer 118 formed thereon is a disk. A function for aligning in the vertical direction is provided. The pre-underlayer 116 preferably has a (111) plane of a face-centered cubic structure (fcc structure) parallel to the main surface of the disk substrate 110. The material of the front ground layer can be selected from Ni, Cu, Pt, Pd, Zr, Hf, and Nb. Furthermore, it is good also as an alloy which contains these metals as a main component and contains any one or more additional elements of Ti, V, Ta, Cr, Mo, and W. For example, NiW, CuW, or CuCr can be suitably selected as the fcc structure.

  The underlayer 118 has an hcp structure, and has a function of growing a Co hcp crystal of the magnetic recording layer 122 as a granular structure. Therefore, the higher the crystal orientation of the underlayer 118, that is, the more the (0001) plane of the crystal of the underlayer 118 is parallel to the main surface of the disk substrate 110, the more the orientation of the magnetic recording layer 22 is improved. Can do. Ru is a typical material for the underlayer, but in addition, it can be selected from RuCr and RuCo. Since Ru has an hcp structure and the lattice spacing of crystals is close to Co, a magnetic recording layer containing Co as a main component can be well oriented.

  When the underlayer 118 is made of Ru, a two-layer structure made of Ru can be obtained by changing the gas pressure during sputtering. Specifically, when forming the second base layer 118b on the upper layer side, the Ar gas pressure is set higher than when forming the first base layer 118a on the lower layer side. When the gas pressure is increased, the free movement distance of the Ru ions to be sputtered is shortened, so that the film formation rate is reduced and the crystal separation can be improved. Further, by increasing the pressure, the size of the crystal lattice is reduced. Since the size of the Ru crystal lattice is larger than that of the Co crystal lattice, if the Ru crystal lattice is made smaller, it approaches that of Co, and the crystal orientation of the Co granular layer can be further improved.

The nonmagnetic granular layer 120 is a nonmagnetic granular layer. A nonmagnetic granular layer is formed on the hcp crystal structure of the underlayer 118, and the granular layer of the first magnetic recording layer 122a is grown thereon, so that the magnetic granular layer can be grown from the initial growth stage (rise). Has the effect of separating. The composition of the nonmagnetic granular layer 120 can be a columnar granular structure by segregating nonmagnetic substances between nonmagnetic crystal grains made of a Co-based alloy to form grain boundaries. In particular, CoCr—SiO ₂ and CoCrRu—SiO ₂ can be suitably used. Further, Rh (rhodium), Pd (palladium), Ag (silver), Os (osmium), Ir (iridium), Au (instead of Ru) Gold) can also be used. A nonmagnetic substance is a substance that can form a grain boundary around magnetic grains so that exchange interaction between magnetic grains (magnetic grains) is suppressed or blocked, and is cobalt (Co). Any non-magnetic substance that does not dissolve in solution can be used. Examples thereof include silicon oxide (SiOx), chromium (Cr), chromium oxide (CrO ₂ ), titanium oxide (TiO ₂ ), zircon oxide (ZrO ₂ ), and tantalum oxide (Ta ₂ O ₅ ).

The magnetic recording layer 122 has a columnar granular structure in which a nonmagnetic substance is segregated around magnetic grains of a hard magnetic material selected from a Co-based alloy, an Fe-based alloy, and a Ni-based alloy to form a grain boundary. It is a magnetic layer. By providing the nonmagnetic granular layer 120, the magnetic grains can be continuously epitaxially grown from the granular structure. In the present embodiment, the first magnetic recording layer 122a and the second magnetic recording layer 122b having different compositions and film thicknesses are used. The first magnetic recording layer 122a and the second magnetic recording layer 122b are all non-magnetic materials such as oxides such as SiO ₂ , Cr ₂ O ₃ , TiO ₂ , B ₂ O ₃ , Fe ₂ O ₃ , BN, etc. Nitride and carbides such as B ₄ C ₃ can be preferably used. Since the perpendicular magnetic recording medium 100 according to the present embodiment is a discrete type, the SNR can be improved by the configuration in which the magnetic recording layer 122 has a granular structure.

  The continuous layer 124 is a layer (also referred to as a continuous layer) that is magnetically continuous in the in-plane direction on the magnetic recording layer 122 having a granular structure. By providing the continuous layer 124, in addition to the high density recording property and low noise property of the magnetic recording layer 122, it is possible to improve the reverse domain nucleation magnetic field Hn, improve the heat-resistant fluctuation characteristic, and improve the overwrite characteristic. In this embodiment, since the perpendicular magnetic recording medium 100 is a discrete type, it has a configuration including the continuous layer 124. However, in the case of a bit pattern type magnetic recording medium, the continuous layer need not be provided.

  The protective layer 126 can be formed by depositing carbon by a CVD method while maintaining a vacuum. The protective layer 126 is a protective layer for protecting the perpendicular magnetic recording layer from the impact of the magnetic head. In general, carbon deposited by the CVD method has improved film hardness compared to that deposited by the sputtering method, so that the perpendicular magnetic recording layer can be protected more effectively against the impact from the magnetic head.

(Magnetic track pattern forming process)
Next, a magnetic track pattern forming process for forming a track portion as a magnetically separated recording region and a servo pattern portion for storing servo information in the magnetic recording layer of this embodiment will be described in detail. Here, the magnetic track pattern forming step may be performed immediately after the magnetic recording layer forming step, or may be performed after performing the continuous layer forming step and the protective layer forming step. For ease of understanding, the track portion and the servo pattern portion are collectively referred to as a magnetic track portion unless otherwise specified.

  In this embodiment, the magnetic track pattern forming step is performed after the protective layer forming step. Accordingly, it is not necessary to form a protective layer after the magnetic track pattern forming process, and the manufacturing process is simplified, thereby improving productivity and reducing contamination in the manufacturing process of the perpendicular magnetic recording medium 100. be able to.

  FIG. 2 is an explanatory diagram for explaining a magnetic track pattern forming process according to the present embodiment. In FIG. 2, the description of the layer closer to the disk substrate 110 than the magnetic recording layer 122 is omitted for easy understanding. The magnetic track pattern forming process includes a peeling layer film forming process, a resist layer film forming process, a patterning process, an ion implantation process, and a removing process. Hereinafter, each process in the magnetic track pattern forming process will be described.

<Peeling layer deposition process>
A Cr layer 130 is deposited on the protective layer 126 by DC magnetron sputtering (see FIG. 2A). Since Cr dissolves in the solvent, it can be easily removed in the removal step described later. Even if Cr remains on the surface of the protective layer 126, since Cr is a non-magnetic substance, the SNR (Signal to Noise Ratio) can be increased without affecting the magnetic characteristics of the magnetic recording layer 122. Can be maintained. In the present embodiment, Cr is deposited as the release layer 130, but the present invention is not limited to this, and it is sufficient if it has solubility with a solvent and heat resistance against heat generated in an ion implantation process described later. On Glass) can also be suitably used.

<Resist layer formation process>
As shown in FIG. 2B, a resist layer 132 is formed on the release layer 130 formed in the release layer forming process by using a spin coat method. In this embodiment, SOG mainly composed of silica is formed as the resist layer 132, but a general novolac-type photoresist can also be used.

<Patterning process>
As shown in FIG. 2C, the magnetic track pattern is transferred by impressing the stamper 134 against the resist layer 132 (imprint method). The stamper 134 has a concavo-convex pattern corresponding to each pattern of a track portion as a recording region to be transferred and a servo pattern portion for storing servo information such as a preamble portion, an address portion, and a burst portion.

  After the magnetic track pattern is transferred to the resist layer 132 by the stamper 134, the uneven pattern is transferred to the resist layer 132 a by removing the stamper 134 from the resist layer 132.

Furthermore, in the present embodiment, the resist layer (indicated by cross-hatching in FIG. 2C) remaining on the bottom surface of the recess of the resist layer 132a to which the concavo-convex pattern has been transferred is used for RIE (Reactive Ion Etching: This is removed by reactive ion etching (FIG. 2D). In the present embodiment, SF ₆ is used as an etching gas, but the present invention is not limited to this, and any one or a plurality of mixed gases selected from the group consisting of CF ₄ , CHF ₃ , and C ₂ F ₆ are also suitable. Can be used.

  In this embodiment, the RIE plasma source uses an ICP that can generate high-density plasma at a low pressure. However, the present invention is not limited to this, and ECR (Electron Cyclotron Resonance) plasma or a general parallel plate RIE apparatus. Can also be used.

  In this embodiment, a fluorine-based release agent is applied to the surface of the stamper 134. As a result, the stamper 134 can be favorably peeled from the resist layer 132.

  In this embodiment, the patterning process uses an imprint method using the stamper 134, but a photolithography method can also be used suitably. However, when using the photolithography method, in the resist layer forming step, the photoresist is formed as a resist layer, and the formed photoresist is exposed and developed using a mask to form a magnetic track portion. The predetermined pattern is transferred.

<Ion implantation process>
As shown in FIG. 2E, an ion beam method is used from the concave portion of the resist layer 132a patterned into a predetermined pattern in the patterning step to the magnetic recording layer 122 through the release layer 130 and the protective layer 126. Ions are implanted. As a result, the crystal in the ion-implanted portion of the magnetic recording layer 122 into which ions have been implanted can be made amorphous (shown by hatching in FIG. 2), and is under the convex portion of the resist layer 132a. The parts can be magnetically separated.

In this embodiment, Ar is used as ions to be implanted, but it is made of B, P, Si, F, C, In, Bi, Kr, Ar, Xe, W, As, Ge, Mo, Sn, and N _2. Any one or more ions selected from the group may be implanted.

  Note that oxygen is not preferable as the ions implanted into the magnetic recording layer 122. Since oxygen oxidizes the magnetic recording layer 122, the coercive force (Hc) in the region between the magnetic tracks is improved, and writing blur occurs when information is written to the magnetic track portion. That is, when oxygen is used, the magnetic recording layer 122 cannot be made non-magnetic or amorphous as in the case of ions implanted in this embodiment, and cannot be reliably separated magnetically.

  In the ion implantation process according to the present embodiment, the amount of energy for implanting ions is about 25 keV. If the energy amount for ion implantation is 50 keV or more, demagnetization or amorphization of the magnetic recording layer 122 is promoted too much, and the magnetic track portion is demagnetized, resulting in a decrease in overwrite characteristics. To do.

<Removal process>
As shown in FIG. 2F, the resist layer 132 is removed together with the peeling layer 130 by using a solvent. In the present embodiment, an organic solvent is used as the solvent, but the present invention is not limited to this, and it is sufficient that the release layer 130 can be dissolved without dissolving the layers below the protective layer 126 and the disk substrate 110, and may be appropriately changed depending on the material of the release layer 130. It is possible. By using an organic solvent as a solvent, only Cr can be suitably dissolved.

(Lubrication layer forming process)
The lubricating layer 128 can be formed of PFPE (perfluoropolyether) by dip coating. PFPE has a long chain molecular structure and binds with high affinity to N atoms on the surface of the protective layer 126. Due to the action of the lubricating layer 128, even if the magnetic head comes into contact with the surface of the perpendicular magnetic recording medium 100, damage or loss of the protective layer 126 can be prevented.

  In the present embodiment, Cr derived from the release layer 130 is interposed between the protective layer 126 and the lubricating layer 128. When Cr is present on the surface of the protective layer 126, the surface energy is improved, and the lubricating layer 128 can be suitably formed.

  In the present embodiment, since the protective layer 126 is made of COC (Carbon Over Coat), Cr is filled between the carbon C, and the hardness of the protective layer 126 can be improved. .

  As described above, in the method of manufacturing the perpendicular magnetic recording medium 100 according to the present embodiment, the release layer 130 that can be removed with a solvent is formed immediately below the resist layer 132, so that ion implantation for patterning the magnetic recording layer 122 is performed. After performing the above, the unnecessary resist layer 132 can be easily and optimally removed. Therefore, the layer exposed on the surface (the protective layer 126 in this embodiment) is not damaged, and the resist layer 132 is not left, and the surface of the protective layer 126 is smoothed even after ion implantation. It becomes possible to keep it.

  In addition, since the protective layer 126 is provided between the magnetic recording layer 122 and the release layer 130, the magnetic recording layer 122 can be prevented from coming into contact with the solvent when the release layer 130 is removed with a solvent. The possibility of damaging 122 can be avoided.

  Although the preferred embodiments of the present invention have been described above with reference to the accompanying drawings, it goes without saying that the present invention is not limited to such examples. It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the claims, and these are naturally within the technical scope of the present invention. Understood.

For example, in the above embodiment, the resist layer 132 is formed immediately above the release layer 130, but the present invention is not limited to this, and heat resistance, ion mask properties, and etching resistance are provided between the release layer and the resist layer. Alternatively, a mask layer (SOG, SiO ₂ or the like) may be formed. At this time, in addition to the etching for removing the resist residue in the patterning step, an etching step for removing the mask layer may be further included.

  Further, in the above embodiment, the lubricating layer forming step is performed after the removing step, but the present invention is not limited to this, and a film is formed by further forming a protective layer after the removing step. The hardness can be further improved.

  Further, in the present embodiment, the perpendicular magnetic recording medium has been described as the magnetic recording medium, but the present invention can also be suitably used for an in-plane magnetic recording medium.

  The present invention can be used as a method of manufacturing a magnetic recording medium mounted on a magnetic recording type HDD or the like and as a magnetic recording medium.

It is a figure explaining the structure of the perpendicular magnetic recording medium concerning embodiment. It is explanatory drawing for demonstrating the magnetic track pattern formation process concerning this embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 ... Perpendicular magnetic recording medium 110 ... Disk base | substrate 112 ... Adhesion layer 114 ... Soft magnetic layer 114a ... First soft magnetic layer 114b ... Spacer layer 114c ... Second soft magnetic layer 116 ... Pre-underlayer 118 ... Underlayer 118a ... First Underlayer 118b ... Second underlayer 120 ... Nonmagnetic granular layer 122 ... Magnetic recording layer 122a ... First magnetic recording layer 122b ... Second magnetic recording layer 124 ... Continuous layer 126 ... Protective layer 128 ... Lubricating layer 130 ... Release layer 132 ... resist layer 134 ... stamper

Claims (8)

A magnetic recording layer forming step of forming a magnetic recording layer on the substrate;
A protective layer forming step of forming a protective layer on the magnetic recording layer;
A release layer forming step of forming a release layer on the protective layer;
A resist layer forming step of forming a resist layer on the release layer;
A patterning step of forming a predetermined pattern by partially changing the thickness of the resist layer by processing the resist layer;
An ion implantation step of implanting ions into the magnetic recording layer with the resist layer interposed therebetween;
A removal step of removing the resist layer by removing the release layer with a solvent;
A method for manufacturing a magnetic recording medium, comprising:   The method of manufacturing a magnetic recording medium according to claim 1, wherein the release layer is Cr. In the ion implantation step, one or more selected from the group consisting of B, P, Si, F, C, In, Bi, Kr, Ar, Xe, W, As, Ge, Mo, Sn, and N ₂ 3. The method of manufacturing a magnetic recording medium according to claim 1, wherein the ions are implanted.   4. The method of manufacturing a magnetic recording medium according to claim 1, wherein in the ion implantation step, an energy amount for implanting ions is 50 keV or less. 5.   The method for producing a magnetic recording medium according to claim 1, wherein the solvent for removing the release layer is an organic solvent.   6. The magnetic recording layer according to claim 1, wherein the magnetic recording layer is a ferromagnetic layer having a granular structure in which a grain boundary portion made of a nonmagnetic substance is formed between crystal grains grown in a columnar shape. A method for producing the magnetic recording medium according to claim.   A magnetic recording medium manufactured using the method for manufacturing a magnetic recording medium according to claim 1. A magnetic recording medium comprising at least a magnetic recording layer, a protective layer, and a lubricating layer in this order on a substrate,
A magnetic recording medium, wherein Cr is interposed between the protective layer and the lubricating layer.

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