JP2010189733A - Additive for pr pulse electrolytic copper plating, and copper plating liquid for periodic reverse pulse electrolytic plating - Google Patents

Additive for pr pulse electrolytic copper plating, and copper plating liquid for periodic reverse pulse electrolytic plating Download PDF

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JP2010189733A
JP2010189733A JP2009036642A JP2009036642A JP2010189733A JP 2010189733 A JP2010189733 A JP 2010189733A JP 2009036642 A JP2009036642 A JP 2009036642A JP 2009036642 A JP2009036642 A JP 2009036642A JP 2010189733 A JP2010189733 A JP 2010189733A
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Yuka Iwamoto
由香 岩本
Takeaki Maeda
武昭 前田
Shingo Saijo
信吾 西城
Takuji Matsunami
卓史 松浪
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Okuno Chemical Industries Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an additive for a copper plating liquid to be used for a PR (periodic reverse) pulse electrolysis technique capable of improving the plating appearance, physical properties of the plating film, filling property and the like when electrolytic copper plating is carried out by supplying a PR pulse current. <P>SOLUTION: The additive for the copper plating liquid to be used for the PR pulse electrolysis technique includes at least one kind of component selected from a group consisting of alkenes and alkynes. The copper plating liquid for the PR pulse electrolysis process includes an aqueous solution containing copper ions and at least one kind of acid component selected from organic acids and inorganic acids, as a basic plating bath, and further contains the additive. A copper plating method by the PR pulse electrolysis technique is provided, in which electrolytic copper plating is carried out on an object to be plated as a cathode in the copper plating liquid by supplying a PR pulse current. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、PRパルス電解法に用いる銅めっき液用の添加剤、該添加剤を含むPRパルス電解法によるめっき用銅めっき液、及びPRパルス電解法による銅めっき方法に関する。   The present invention relates to an additive for a copper plating solution used in a PR pulse electrolysis method, a copper plating solution for plating by a PR pulse electrolysis method containing the additive, and a copper plating method by a PR pulse electrolysis method.

近年、電子機器の高機能化、高速化に伴い、プリント配線板においても高密度化が要求されている。プリント配線板の高密度化にはビルドアッププロセスが不可欠であり、中でもビアフィリングは重要なめっき技術である。   In recent years, with the increase in functionality and speed of electronic devices, higher density is also required for printed wiring boards. A build-up process is indispensable for increasing the density of printed wiring boards, and via filling is an important plating technology.

この様なビルドアッププロセスにおいて、従来は、非貫通のビアに均一なめっきを施し、その後絶縁樹脂や導電性ペーストを充填し、回路を形成していたが、この工法ではビアの上にビアを形成することができず、回路設計の自由度を奪うことになる。このため、近年では、ビアホール内を銅めっきで充填するビアフィリングを行って、配線層を積み重ねる工法が採用されている。   Conventionally, in such a build-up process, a non-through via is uniformly plated and then filled with an insulating resin or conductive paste to form a circuit. In this method, a via is formed on the via. It cannot be formed, and the degree of freedom in circuit design is taken away. For this reason, in recent years, a method of stacking wiring layers by performing via filling in which via holes are filled with copper plating has been adopted.

同様に、最近ではスルーホールフィリング技術も検討されている。この方法は、一般にビルドアップ基板のコア層に用いられており、以前はスルーホールに均一なめっきを施し、絶縁樹脂を充填し、その後再び硫酸銅めっき、エッチングを行い、回路を形成していた。しかしながら、この工程は長いことから、スルーホールを銅めっきで充填して積み重ねる工法が提案された。この工法を用いることにより、プロセスの簡略化、放熱性、配線スペースが広がるといった利点があり、必要性がますます大きくなっている。   Similarly, through-hole filling technology has recently been studied. This method is generally used for the core layer of the build-up board. Previously, uniform plating was applied to the through-holes and filled with insulating resin, and then copper sulfate plating and etching were performed again to form a circuit. . However, since this process is long, a method has been proposed in which through holes are filled with copper plating and stacked. By using this method, there are advantages such as simplification of the process, heat dissipation, and expansion of wiring space, and the necessity is increasing.

一方、従来から用いられているスルーホールめっきも未だ欠かせない技術である。この方法では、高信頼性の要求度が強く、ホール内膜厚の確保が重要である。特に、生産性向上のため高電流密度で高スローイングパワーが得られることが望まれている。   On the other hand, conventionally used through-hole plating is still an indispensable technology. In this method, high reliability is required and it is important to secure the film thickness in the hole. In particular, it is desired that high throwing power can be obtained at a high current density in order to improve productivity.

上記したビアフィリング、スルーホールフィリング、スルーホールめっき等においては、従来は、主として、硫酸銅めっき浴を用いて、直流電解でめっき処理を行う方法が採用されている。   Conventionally, in the above-described via filling, through-hole filling, through-hole plating, etc., a method of performing plating treatment by direct current electrolysis mainly using a copper sulfate plating bath has been adopted.

硫酸銅めっき浴を用いるめっき方法としては、直流電解法の他に、PRパルス電流を通電して電解する方法、いわゆるPRパルス電解法が知られている。この方法は、一定時間通電してめっきを行った後、逆方向の電流を短時間通電することを繰り返す方法であり、均一電着性の良いめっき方法として知られている。しかしながら、PRパルス電解法は、直流電解法と比較するとめっき皮膜の外観(光沢性)が劣るものとなり、更に、伸びや抗張力等の皮膜物性においても極端な低下が認められるという問題点がある。また、PRパルス電解法では、ブラインドビアホールを有する基板においては、良好なフィリング性が得られないという問題点もある。   As a plating method using a copper sulfate plating bath, in addition to the direct current electrolysis method, a method of conducting electrolysis by applying a PR pulse current, a so-called PR pulse electrolysis method is known. This method is a method of repeatedly applying a current in a reverse direction for a short time after plating by energizing for a certain time, and is known as a plating method with good uniform electrodeposition. However, the PR pulse electrolysis method has a problem in that the appearance (glossiness) of the plating film is inferior to the direct current electrolysis method, and there is a problem that an extreme decrease is observed in film properties such as elongation and tensile strength. The PR pulse electrolysis method also has a problem that good filling properties cannot be obtained on a substrate having blind via holes.

これらの理由により、PRパルス電解法は、均一電着性が良好であるという特徴を有するものの、ビアフィリング、スルーホールフィリング、スルーホールめっき等のめっき方法として広く普及するには至っていない。   For these reasons, although the PR pulse electrolysis method has a feature of good throwing power, it has not been widely used as a plating method such as via filling, through-hole filling, and through-hole plating.

特開2003-328179号公報JP2003-328179A 特開2008-031516号公報JP 2008-031516 特開2008-266722号公報JP 2008-266722 A

本発明は、上記した従来技術の現状に鑑みてなされたものであり、その主な目的は、PRパルス電流を通電して電解銅めっきを行う際に、めっき外観、皮膜物性、フィリング性等を改善することができるPRパルス電解法に用いる銅めっき液用の添加剤を提供することである。   The present invention has been made in view of the current state of the prior art described above, and its main purpose is to provide plating appearance, film physical properties, filling properties, etc. when electrolytic copper plating is conducted by applying a PR pulse current. An object of the present invention is to provide an additive for a copper plating solution used in a PR pulse electrolysis method that can be improved.

本発明者は、上記した目的を達成すべく鋭意研究を行ってきた。その結果、PRパルス電解法によって電解銅めっきを行う際に、電解銅めっき液中に、アルケン類及びアルキン類からなる群から選ばれた少なくとも一種の成分を添加することにより、めっき外観、皮膜物性、フィリング性等が低下するという従来のPRパルス電解法における問題点を改善して、優れた性能の電解銅めっき皮膜を形成できることを見出し、ここに本発明を完成するに至った。   The present inventor has intensively studied to achieve the above-described object. As a result, when performing electrolytic copper plating by the PR pulse electrolysis method, by adding at least one component selected from the group consisting of alkenes and alkynes to the electrolytic copper plating solution, the plating appearance and film properties The present inventors have found that it is possible to form an electrolytic copper plating film having excellent performance by improving the problem in the conventional PR pulse electrolysis method that the filling property and the like are lowered, and the present invention has been completed here.

即ち、本発明は、下記のPRパルス電解法に用いる銅めっき液用の添加剤、該添加剤を含むPRパルス電解法によるめっき用銅めっき液、及びPRパルス電解法による銅めっき方法を提供するものである。
1. アルケン類及びアルキン類からなる群から選ばれた少なくとも一種の成分からなる、PRパルス電解法に用いる銅めっき液用添加剤。
2. アルケン類が、下記一般式(I):
That is, the present invention provides an additive for a copper plating solution used in the following PR pulse electrolysis method, a copper plating solution for plating by the PR pulse electrolysis method containing the additive, and a copper plating method by the PR pulse electrolysis method. Is.
1. An additive for a copper plating solution used in a PR pulse electrolysis method, comprising at least one component selected from the group consisting of alkenes and alkynes.
2. Alkenes are represented by the following general formula (I):

Figure 2010189733
Figure 2010189733

(式中、R〜Rは、同一又は異なって、それぞれ、水素原子、低級アルキル基、水酸基、カルボキシル基、基:−SO(但し、Mは水素原子又はアルカリ金属である)、基:−CONH、又は基:−COOR(但し、Rは置換基として水酸基を有することのある低級アルキル基である)であり、該低級アルキル基は、水酸基、カルボキシル基、及び基:−SO(但し、Mは水素原子又はアルカリ金属である)からなる群から選ばれた少なくとも一種の置換基を有してもよい。)で表される化合物であり、
アルキン類が、下記一般式(II):
(Wherein R 1 to R 4 are the same or different and each represents a hydrogen atom, a lower alkyl group, a hydroxyl group, a carboxyl group, a group: —SO 3 M 1 (wherein M 1 is a hydrogen atom or an alkali metal) ), Group: —CONH 2 , or group: —COOR (wherein R is a lower alkyl group which may have a hydroxyl group as a substituent), and the lower alkyl group includes a hydroxyl group, a carboxyl group, and a group: -SO 3 M 1 (wherein M 1 may have at least one substituent selected from the group consisting of a hydrogen atom or an alkali metal).
Alkynes are represented by the following general formula (II):

Figure 2010189733
Figure 2010189733

(式中、RおよびRは、同一又は異なって、それぞれ、水素原子、低級アルキル基、水酸基、カルボキシル基、置換基を有することのあるアルコキシ基、基:−NR (但し、Rは、水素原子又はアルキル基である)、基:−SO(但し、Mは水素原子又はアルカリ金属である)、又は基:−(O(CH−OH(但し、nは2又は3、mは1〜5の整数である)であり、該低級アルキル基は、カルボキシル基、水酸基、置換基を有することのあるアルコキシ基、基:−NR (但し、Rは、水素原子又は低級アルキル基である)、基:−(O(CH−OH(但し、nは2又は3、mは1〜5の整数である)、及び基:−SO(但し、Mは水素原子又はアルカリ金属である)からなる群から選ばれた少なくとも一種の置換基を有してもよい。)で表される化合物である上記項1に記載のPRパルス電解法に用いる銅めっき液用添加剤。
3. アルケン類及びアルキン類が、ぞれぞれ、水酸基、カルボキシル基、基:−SO(但し、Mは水素原子又はアルカリ金属である)、基:−CONH、及びアミノ基からなる群から選ばれた少なくとも一種の親水性基を有するものである、上記項1又は2に記載のPRパルス電解法に用いる銅めっき液用添加剤。
4. 銅イオン、並びに有機酸及び無機酸から選ばれた少なくとも一種の酸成分を含有する水溶液を基本めっき浴として、
更に、上記項1〜3のいずれかに記載の添加剤を含有することを特徴とする、PRパルス電解法によるめっき用銅めっき液。
5. 基本めっき浴が、(i)銅イオン、(ii)有機酸及び無機酸から選ばれた少なくとも一種の酸成分、(iii)塩化物イオン、(iv)非イオン性ポリエーテル系高分子界面活性剤、並びに(v)含硫黄有機化合物を含有する水溶液である請求項4に記載のPRパルス電解法によるめっき用銅めっき液。
6. 基本めっき浴が、(i)銅イオン、(ii)有機酸及び無機酸から選ばれた少なくとも一種の酸成分、(iii)塩化物イオン、(iv)非イオン性ポリエーテル系高分子界面活性剤、(v)含硫黄有機化合物、並びに(vi)含窒素化合物を含有する水溶液である請求項4に記載のPRパルス電解法によるめっき用銅めっき液。
7. 上記項1〜3のいずれかに記載の添加剤を1mg/L〜100g/L含有する上記項4〜6のいずれかに記載のPRパルス電解法によるめっき用銅めっき液。
8. 上記項4〜7のいずれかに記載の銅めっき液中で、被めっき物をカソードとして、PRパルス電流を通電して電解銅めっきを行うことを特徴とするPRパルス電解法による銅めっき方法。
(Wherein R 5 and R 6 are the same or different and each represents a hydrogen atom, a lower alkyl group, a hydroxyl group, a carboxyl group, an alkoxy group which may have a substituent, a group: —NR 7 2 (provided that R 7 is a hydrogen atom or an alkyl group), a group: —SO 3 M 1 (where M 1 is a hydrogen atom or an alkali metal), or a group: — (O (CH 2 ) n ) m —OH ( However, n is 2 or 3, m is an integer of 1-5, and this lower alkyl group is a carboxyl group, a hydroxyl group, an alkoxy group which may have a substituent, a group: —NR 7 2 (provided that , R 7 is a hydrogen atom or a lower alkyl group), a group: — (O (CH 2 ) n ) m —OH (where n is 2 or 3, m is an integer of 1 to 5), and group: -SO 3 M 1 (where, M 1 is a hydrogen atom or an alkali metal Additive for copper plating solution used in the PR pulse electrolysis method according to item 1 is a compound represented by at least a kind of substituent may be.) Selected from the group consisting of certain).
3. Alkenes and alkynes each comprise a hydroxyl group, a carboxyl group, a group: —SO 3 M 1 (where M 1 is a hydrogen atom or an alkali metal), a group: —CONH 2 , and an amino group. Item 3. An additive for copper plating solution used in the PR pulse electrolysis method according to Item 1 or 2, which has at least one hydrophilic group selected from the group.
4). An aqueous solution containing at least one acid component selected from copper ions and organic acids and inorganic acids as a basic plating bath,
Furthermore, the copper plating solution for plating by PR pulse electrolysis characterized by containing the additive in any one of said claim | item 1-3.
5). The basic plating bath is (i) at least one acid component selected from copper ions, (ii) organic acids and inorganic acids, (iii) chloride ions, and (iv) nonionic polyether polymer surfactants. And (v) a copper plating solution for plating by the PR pulse electrolysis method according to claim 4, which is an aqueous solution containing a sulfur-containing organic compound.
6). The basic plating bath is (i) at least one acid component selected from copper ions, (ii) organic acids and inorganic acids, (iii) chloride ions, and (iv) nonionic polyether polymer surfactants. The copper plating solution for plating by the PR pulse electrolysis method according to claim 4, wherein the aqueous solution contains (v) a sulfur-containing organic compound and (vi) a nitrogen-containing compound.
7). The copper plating solution for plating by the PR pulse electrolysis method according to any one of Items 4 to 6, wherein the additive according to any one of Items 1 to 3 is contained in an amount of 1 mg / L to 100 g / L.
8). 8. A copper plating method according to the PR pulse electrolysis method, wherein in the copper plating solution according to any one of the above items 4 to 7, electrolytic copper plating is performed by supplying a PR pulse current with the object to be plated as a cathode.

本発明の添加剤は、PRパルス電流を通電して電解めっきを行う方法、いわゆるPRパルス電解法に用いる電解銅めっき液、即ち、PRパルス電解銅めっき液用の添加剤であり、アルケン類及びアルカン類からなる群から選ばれた少なくとも一種を有効成分とするものである。   The additive of the present invention is an additive for an electrolytic copper plating solution used in a method of conducting electroplating by applying a PR pulse current, that is, a so-called PR pulse electrolytic method, that is, an additive for a PR pulse electrolytic copper plating solution. The active ingredient is at least one selected from the group consisting of alkanes.

このような添加剤を添加した電解銅めっき液を用いることにより、PRパルス電解法で電解銅めっきを行う際の問題点であった、直流電解法と比較して、形成されるめっき外観が劣る点や、めっき皮膜の物性の低下、ビアフィリング性、スルーホールフィリング性の低下等の各種の問題点を大きく改善して、PRパルス電解銅めっき方法を、ビアフィリング、スルーホールフィリング、スルーホールめっき等のめっき方法として有効に利用することが可能となる。   By using an electrolytic copper plating solution to which such additives are added, the appearance of the formed plating is inferior to the direct current electrolytic method, which was a problem when performing electrolytic copper plating by the PR pulse electrolytic method. In addition, the PR pulse electrolytic copper plating method, via filling, through-hole filling, through-hole plating, etc. are greatly improved with various problems such as reduced physical properties of plating film, via filling, and through-hole filling. It can be effectively used as a plating method.

添加剤として用いるアルケン類については特に限定はないが、特に、下記一般式(I):   Although there is no limitation in particular about alkenes used as an additive, in particular the following general formula (I):

Figure 2010189733
Figure 2010189733

(式中、R〜Rは、同一又は異なって、それぞれ、水素原子、低級アルキル基、水酸基、カルボキシル基、基:−SO(但し、Mは水素原子又はアルカリ金属である)、基:−CONH、又は基:−COOR(Rは置換基として水酸基を有することのある低級アルキル基である)であり、該アルキル基は、水酸基、カルボキシル基、及び基:−SO(但し、Mは水素原子又はアルカリ金属である)からなる群から選ばれた少なくとも一種の置換基を有してもよい。)で表される化合物が好ましい。 (Wherein R 1 to R 4 are the same or different and each represents a hydrogen atom, a lower alkyl group, a hydroxyl group, a carboxyl group, a group: —SO 3 M 1 (wherein M 1 is a hydrogen atom or an alkali metal) ), A group: —CONH 2 , or a group: —COOR (R is a lower alkyl group which may have a hydroxyl group as a substituent), and the alkyl group includes a hydroxyl group, a carboxyl group, and a group: —SO 3. A compound represented by M 1 (wherein M 1 may have at least one substituent selected from the group consisting of a hydrogen atom or an alkali metal) is preferable.

アルキン類についても特に限定はないが、特に、下記一般式(II):   The alkynes are not particularly limited, but in particular, the following general formula (II):

Figure 2010189733
Figure 2010189733

(式中、RおよびRは、同一又は異なって、それぞれ、水素原子、低級アルキル基、水酸基、カルボキシル基、置換基を有することのあるアルコキシ基、基:−NR (但し、Rは、水素原子又はアルキル基である)、基:−SO(但し、Mは水素原子又はアルカリ金属である)、又は基:−(O(CH−OH(但し、nは2又は3、mは1〜5の整数である)であり、該低級アルキル基は、カルボキシル基、水酸基、置換基を有することのあるアルコキシ基、基:−NR (但し、Rは、水素原子又は低級アルキル基である)、基:−(O(CH−OH(但し、nは2又は3、mは1〜5の整数である)、及び基:−SO(但し、Mは水素原子又はアルカリ金属である)からなる群から選ばれた少なくとも一種の置換基を有してもよい。)で表される化合物が好ましい。 (Wherein R 5 and R 6 are the same or different and each represents a hydrogen atom, a lower alkyl group, a hydroxyl group, a carboxyl group, an alkoxy group which may have a substituent, a group: —NR 7 2 (provided that R 7 is a hydrogen atom or an alkyl group), a group: —SO 3 M 1 (where M 1 is a hydrogen atom or an alkali metal), or a group: — (O (CH 2 ) n ) m —OH ( However, n is 2 or 3, m is an integer of 1-5, and this lower alkyl group is a carboxyl group, a hydroxyl group, an alkoxy group which may have a substituent, a group: —NR 7 2 (provided that , R 7 is a hydrogen atom or a lower alkyl group), a group: — (O (CH 2 ) n ) m —OH (where n is 2 or 3, m is an integer of 1 to 5), and group: -SO 3 M 1 (where, M 1 is a hydrogen atom or an alkali metal May have at least one substituent selected from the group consisting of certain).) The compound represented by are preferred.

上記一般式(I)及び(II)において、低級アルキル基としては、炭素数1〜5程度の直鎖状又は分枝鎖状のアルキル基が好ましく、その具体例としては、メチル、エチル、プロピル、イソプロピル、ブチル、イソブチル、tert−ブチル、ペンチル等を挙げることができる。   In the above general formulas (I) and (II), the lower alkyl group is preferably a linear or branched alkyl group having about 1 to 5 carbon atoms, and specific examples thereof include methyl, ethyl, propyl , Isopropyl, butyl, isobutyl, tert-butyl, pentyl and the like.

また、一般式(II)における置換基を有することのあるアルコキシ基としては、炭素数1〜5程度のアルコキシ基が好ましい。該アルコキシ基は、水酸基及び−SO(但し、Mは水素原子又はアルカリ金属である)からなる群から選ばれた置換基を1個又は2個以上有してもよい。 Moreover, as an alkoxy group which may have a substituent in general formula (II), a C1-C5 alkoxy group is preferable. The alkoxy group may have one or two or more substituents selected from the group consisting of a hydroxyl group and —SO 3 M 1 (where M 1 is a hydrogen atom or an alkali metal).

本発明では、特に、水酸基、カルボキシル基、基:−SO(但し、Mは水素原子又はアルカリ金属である)基:−CONH、アミノ基等の親水性基を少なくとも一個有するアルキン類及びアルカン類が好ましい。 In the present invention, in particular, a hydroxyl group, a carboxyl group, a group: —SO 3 M 1 (where M 1 is a hydrogen atom or an alkali metal) group: —CONH 2 , an alkyne having at least one hydrophilic group such as an amino group And alkanes are preferred.

親水性基を有するアルケン類の具体例としては、下記化合物(1)〜(8)を挙げることができる。尚、下記の各化学式において、シス型、トランス型等の幾何異性体が存在する場合には、いずれの異性体も有効である。
(1)HC=CHCHOH
(2)HC=CHCHSONa
(3)HCHC=CH−COOH
(4)HOOC−HC=CH−COOH
(5)HC=CHCONH
(6)HC=CHCHCHOH
(7)H3CHC=CHCHCHCHOH
(8) HOCCHCCOOH=CHCOOH
(9) HC=C(COOH)CHCOOH
(10)HC=CHCHCHCHOH
また、親水性基を有するアルキン類の具体例としては下記(11)〜(21)の化合物を挙げることができる。尚、下記の各化学式において、シス型、トランス型等の幾何異性体が存在する場合には、いずれの異性体も有効である。
(11)
Specific examples of the alkene having a hydrophilic group include the following compounds (1) to (8). In the following chemical formulas, when there are geometrical isomers such as cis type and trans type, any isomers are effective.
(1) H 2 C═CHCH 2 OH
(2) H 2 C═CHCH 2 SO 3 Na
(3) H 3 CHC = CH -COOH
(4) HOOC-HC = CH-COOH
(5) H 2 C═CHCONH 2
(6) H 2 C = CHCH 2 CH 2 OH
(7) H 3 CHC═CHCH 2 CH 2 CH 2 OH
(8) HOCCH 2 CCOOH = CHCOOH
(9) H 2 C═C (COOH) CH 2 COOH
(10) H 2 C═CHCH 2 CH 2 CH 2 OH
Specific examples of alkynes having a hydrophilic group include the following compounds (11) to (21). In the following chemical formulas, when there are geometrical isomers such as cis type and trans type, any isomers are effective.
(11)

Figure 2010189733
Figure 2010189733

(12) (12)

Figure 2010189733
Figure 2010189733

(13) (13)

Figure 2010189733
Figure 2010189733

(14) (14)

Figure 2010189733
Figure 2010189733

(15) (15)

Figure 2010189733
Figure 2010189733

(16) (16)

Figure 2010189733
Figure 2010189733

(17) (17)

Figure 2010189733
Figure 2010189733

(18) (18)

Figure 2010189733
Figure 2010189733

(19) (19)

Figure 2010189733
Figure 2010189733

(20) (20)

Figure 2010189733
Figure 2010189733

(21) (21)

Figure 2010189733
Figure 2010189733

(22) (22)

Figure 2010189733
Figure 2010189733

上記したアルキン類とアルカン類は、一種単独又は二種以上混合して用いることができる。   The above alkynes and alkanes can be used singly or in combination of two or more.

上記したアルキン類及びアルカン類からなる群から選ばれた少なくとも一種の成分からなる添加剤の電解銅めっき液中の濃度は、特に限定的ではないが、通常、1mg/L〜100g/L程度とすることが好ましく、10mg/L〜50g/L程度とすることがより好ましい。   The concentration in the electrolytic copper plating solution of the additive comprising at least one component selected from the group consisting of the alkynes and alkanes is not particularly limited, but is usually about 1 mg / L to 100 g / L. Preferably, it is more preferably about 10 mg / L to 50 g / L.

本発明の添加剤を用いる基本浴となるPRパルス電解銅めっき液の種類については、特に限定はなく、銅イオン、並びに有機酸及び無機酸から選ばれた少なくとも一種の酸成分を必須成分として含有する酸性銅めっき液を用いることができる。   There is no particular limitation on the type of PR pulse electrolytic copper plating solution used as a basic bath using the additive of the present invention, and it contains at least one acid component selected from copper ions and organic acids and inorganic acids as an essential component. An acidic copper plating solution can be used.

銅イオン源としては、めっき液中に可溶性の銅化合物であれば、特に限定なく使用できる。この様な銅化合物の具体例としては、硫酸銅、酸化銅、塩化銅、炭酸銅、ピロリン酸銅、アルカンスルホン酸銅、アルカノールスルホン酸銅、有機酸銅等を挙げることができる。銅化合物は、一種単独又は二種以上混合して用いることができる。   As the copper ion source, any copper compound that is soluble in the plating solution can be used without particular limitation. Specific examples of such a copper compound include copper sulfate, copper oxide, copper chloride, copper carbonate, copper pyrophosphate, alkane sulfonate copper, alkanol sulfonate copper, and organic acid copper. A copper compound can be used individually by 1 type or in mixture of 2 or more types.

銅イオン濃度については、特に限定はないが、例えば、10〜250g/L程度の範囲とすることができる。   Although there is no limitation in particular about copper ion concentration, For example, it can be set as the range of about 10-250 g / L.

酸成分としては、有機酸及び無機酸からなる群から選ばれた少なくとも一種を用いることができる。有機酸の具体例としては、メタンスルホン酸等のアルカンスルホン酸、アルカノールスルホン酸等を挙げることができ、無機酸の具体例としては硫酸等を挙げることができる。これらの酸成分は、一種単独又は二種以上混合して用いることができる。酸成
分の濃度については、特に限定はないが、例えば、20〜400g/L程度とすることができる。
As the acid component, at least one selected from the group consisting of organic acids and inorganic acids can be used. Specific examples of organic acids include alkane sulfonic acids such as methane sulfonic acid, alkanol sulfonic acids, and the like, and specific examples of inorganic acids include sulfuric acid and the like. These acid components can be used singly or in combination of two or more. Although there is no limitation in particular about the density | concentration of an acid component, For example, it can be set as about 20-400 g / L.

上記PRパルス電解銅めっき液には塩化物イオンが含まれる。その濃度は、通常、2〜100mg/L程度であればよい。この様な濃度範囲とするためには、必要に応じて、塩酸、塩化ナトリウム等を用いてめっき液中の塩化物イオン濃度を調整すればよい。   The PR pulse electrolytic copper plating solution contains chloride ions. The concentration is usually about 2 to 100 mg / L. In order to obtain such a concentration range, the chloride ion concentration in the plating solution may be adjusted using hydrochloric acid, sodium chloride, or the like, if necessary.

さらに、上記PRパルス電解銅めっき液には、通常、添加剤として、非イオン系ポリエーテル高分子界面活性剤、含硫黄有機化合物等が含まれる。また、必要に応じて、含窒素有機化合物等が含まれてもよい。これらの添加剤は、電解銅めっき液における公知の添加剤成分から適宜選択して用いれば良い。例えば、スル−ホールめっき用の硫酸銅めっき液に配合されている添加剤やブラインドビアホール用の硫酸銅めっきに配合されている添加剤などを用いることができる。   Further, the PR pulse electrolytic copper plating solution usually contains a nonionic polyether polymer surfactant, a sulfur-containing organic compound, and the like as additives. Moreover, a nitrogen-containing organic compound etc. may be contained as needed. These additives may be appropriately selected from known additive components in the electrolytic copper plating solution. For example, the additive mix | blended with the copper sulfate plating solution for through-hole plating, the additive mix | blended with the copper sulfate plating for blind via holes, etc. can be used.

この様な添加剤の内で、非イオン系ポリエーテル高分子界面活性剤は、通常、ポリマー成分と称されているものであり、例えば、ポリエチレングリコール、ポリプロピレングリコール、ポリエチレンオキシド、ポリオキシアルキレングリコール等のポリエーテル化合物等を用いることができる。非イオン系ポリエーテル高分子界面活性剤濃度については、特に限定はないが、例えば、0.01〜10g/L程度の範囲とすることができる。   Among such additives, nonionic polyether polymer surfactants are usually referred to as polymer components, such as polyethylene glycol, polypropylene glycol, polyethylene oxide, polyoxyalkylene glycol, etc. A polyether compound or the like can be used. The concentration of the nonionic polyether polymer surfactant is not particularly limited, but can be, for example, in the range of about 0.01 to 10 g / L.

含硫黄有機化合物は、通常、ブライトナーと称されているものであり、公知の添加剤成分から適宜選択して用いればよい。例えば、3-メルカプトプロパンスルホン酸、そのナトリウム塩、ビス(3-スルホプロピル)ジスルフィド、その2ナトリウム塩、N,N-ジメチルジチオカルバミン酸(3-スルホプロピル)エステル、そのナトリウム塩等の硫黄化合物を用いることができる。含硫黄有機化合物濃度については、特に限定はないが、例えば、0.1〜200mg/L程度の範囲とすることができる。   The sulfur-containing organic compound is usually called a brightener, and may be appropriately selected from known additive components. For example, sulfur compounds such as 3-mercaptopropanesulfonic acid, its sodium salt, bis (3-sulfopropyl) disulfide, its 2 sodium salt, N, N-dimethyldithiocarbamic acid (3-sulfopropyl) ester, its sodium salt, etc. Can be used. Although there is no limitation in particular about a sulfur-containing organic compound density | concentration, For example, it can be set as the range of about 0.1-200 mg / L.

また、必要に応じて添加することのできる含窒素有機化合物は、通常、レベラーと称されているものであり、これも公知の添加剤成分から適宜選択して用いればよい。例えば、フェナジン化合物、サフラニン化合物、ポリアルキレンイミン、チオ尿素誘導体、ポリアクリル酸アミド等の窒素化合物を用いることができる。含窒素有機化合物濃度については、特に限定はないが、例えば、0.1〜200mg/L程度の範囲とすることができる。   Further, the nitrogen-containing organic compound that can be added as needed is usually called a leveler, and this may be used by appropriately selecting from known additive components. For example, nitrogen compounds such as a phenazine compound, a safranine compound, a polyalkyleneimine, a thiourea derivative, and a polyacrylic acid amide can be used. Although there is no limitation in particular about a nitrogen-containing organic compound density | concentration, For example, it can be set as the range of about 0.1-200 mg / L.

本発明の添加剤は、特に、基本浴を硫酸銅めっき液とする場合に良好な効果を得ること
ができる。以下、硫酸銅めっき液の組成の具体例を示す。
*硫酸銅めっき液
硫酸銅5水塩 20〜300g/L(好ましくは50〜250g/L)
硫酸 20〜300g/L(好ましくは50〜250g/L)
塩素イオン 5〜100mg/L(好ましくは30〜80mg/L)
本発明の添加剤を含むPRパルス電解銅めっき液は、PRパルス電流を通電して電解銅めっきを行う際に用いる電解銅めっき液である。該電解銅めっき液を用いる際のPRパルス電流の通電条件については、特に限定的ではないが、通常、銅めっき皮膜析出のための正電解の電流密度を0.1〜10 A/dm程度、好ましくは、1〜5A/dm程度とすればよく、銅めっき皮膜を溶解するための逆電解の電流密度を0.1〜100A/dm程度、好ましくは、1〜80A/dm程度とすればよい。また、正電解時間については、10〜100m秒程度とし、逆電解時間については0.1〜10m秒程度とすることが好ましい。この場合、正電解時間と逆電解時間の比率は、正電解時間:逆電解時間=1:0.01〜1:0.1程度とすることが好ましい。
The additive of the present invention can obtain a good effect particularly when the basic bath is a copper sulfate plating solution. Hereinafter, specific examples of the composition of the copper sulfate plating solution are shown.
* Copper sulfate plating solution Copper sulfate pentahydrate 20-300 g / L (preferably 50-250 g / L)
Sulfuric acid 20-300 g / L (preferably 50-250 g / L)
Chlorine ion 5-100 mg / L (preferably 30-80 mg / L)
The PR pulse electrolytic copper plating solution containing the additive of the present invention is an electrolytic copper plating solution used when performing electrolytic copper plating by applying a PR pulse current. The condition for energizing the PR pulse current when using the electrolytic copper plating solution is not particularly limited. Usually, the current density of positive electrolysis for depositing the copper plating film is about 0.1 to 10 A / dm 2. preferably it may be the 1-5A / dm 2 about, 0.1~100A / dm 2 about the current density of the reverse electrolysis to dissolve the copper plating film, preferably, 1~80A / dm 2 about And it is sufficient. The forward electrolysis time is preferably about 10 to 100 milliseconds, and the reverse electrolysis time is preferably about 0.1 to 10 milliseconds. In this case, the ratio of the normal electrolysis time and the reverse electrolysis time is preferably about normal electrolysis time: reverse electrolysis time = 1: 0.01 to 1: 0.1.

めっき液の液温については、通常、10〜40℃程度とすればよい。   About the liquid temperature of a plating solution, what is necessary is usually just about 10-40 degreeC.

めっき液の攪拌方法についても特に限定はなく、空気攪拌、噴流攪拌などを行うことができ、両者を併用しても良い。   The method for stirring the plating solution is not particularly limited, and air stirring, jet stirring, and the like can be performed.

めっき処理を行う際に、アノードとしては、可溶性アノード及び不溶性アノードをいずれも用いることができる。例えば、可溶性アノードとしては、例えば、リン含有量0.02〜0.06%程度の含リン銅を用いることができる。また、不溶性アノードとしては、チタンに酸化イリジウムをコーティングしたもの、チタンに白金めっきしたもの等を用いることができる。アノードの形状についても特に限定はなく、棒状、球状、板状等の各種形状のアノードを用いることができる。   When performing the plating treatment, both a soluble anode and an insoluble anode can be used as the anode. For example, as the soluble anode, for example, phosphorus-containing copper having a phosphorus content of about 0.02 to 0.06% can be used. As the insoluble anode, titanium coated with iridium oxide, titanium plated with platinum, or the like can be used. There is no particular limitation on the shape of the anode, and various shapes of anodes such as a rod shape, a spherical shape, and a plate shape can be used.

本発明の添加剤を含むPRパルス電解銅めっき液では、被めっき物の種類は特に限定はないが、特に、スルーホールやビアホールなどの微小孔を有する基板を被めっき物とする場合には、良好な均一電着性により、微小孔の内部にまで均一にめっき皮膜を形成することができる。しかも、形成されるめっき皮膜の外観については、直流電解を行った場合と同様の良好な外観となり、更に、伸び、抗張力などのめっき皮膜の物性についても良好となる。   In the PR pulse electrolytic copper plating solution containing the additive of the present invention, the type of the object to be plated is not particularly limited, but in particular, when a substrate having a minute hole such as a through hole or a via hole is to be plated, Due to the good throwing power, a plating film can be uniformly formed even inside the micropores. In addition, the appearance of the plating film to be formed has the same good appearance as when direct current electrolysis is performed, and the physical properties of the plating film such as elongation and tensile strength are also good.

本発明の添加剤を含む電解銅めっき液を用いてめっき処理を行う場合には、前処理方法については、特に限定はなく、常法に従えばよい。例えば、スルーホールやビアホールを形成したプリント配線板を被めっき物とする場合には、一般的にプリント基板製造に用いられる無電解銅めっきを施した被めっき物について、常法により脱脂を行い、前工程で付着した汚れ等を除去した後、酸洗を行って酸化皮膜を除去、活性化したのち、本発明めっき液に浸漬して、PRパルス電流を通電して電解めっきを行えばよい。   In the case of performing the plating treatment using the electrolytic copper plating solution containing the additive of the present invention, the pretreatment method is not particularly limited and may be followed by a conventional method. For example, when a printed wiring board in which through holes and via holes are formed is used as an object to be plated, the object subjected to electroless copper plating generally used for manufacturing a printed circuit board is degreased by a conventional method, After removing dirt and the like adhering in the previous step, pickling is performed to remove and activate the oxide film, and then immersion is performed in the plating solution of the present invention, and a PR pulse current is applied to perform electrolytic plating.

本発明の添加剤を含む電解銅めっき液を用いて、PRパルス電解法により銅めっきを行うことによって、均一電着性が良好であるというPR電解銅めっき液の優れた点を維持した上で、形成されるめっき皮膜の外観、皮膜物性、フィリング性等を向上させることができる。   Using the electrolytic copper plating solution containing the additive of the present invention, by performing copper plating by the PR pulse electrolytic method, while maintaining the excellent point of the PR electrolytic copper plating solution that the uniform electrodeposition is good The appearance, film physical properties, filling properties, etc. of the plating film to be formed can be improved.

このため、本発明の添加剤を含むPR電解銅めっき液は、電解銅めっき法によって、ビアフィリング、スルーホールフィリング、スルーホールめっき等を行う際に特に有効に用いることができる。   For this reason, the PR electrolytic copper plating solution containing the additive of the present invention can be used particularly effectively when performing via filling, through hole filling, through hole plating or the like by the electrolytic copper plating method.

実施例1における均一電着性の測定部分の断面図。Sectional drawing of the measurement part of the uniform electrodeposition property in Example 1. FIG. 実施例10〜12及び比較例7〜8におけるビアフィリング率の測定部分の断面図。Sectional drawing of the measurement part of the via filling rate in Examples 10-12 and Comparative Examples 7-8. 実施例12〜15及び比較例9〜10におけるスルーホールフィリング率の測定部分の断面図。Sectional drawing of the measurement part of the through-hole filling rate in Examples 12-15 and Comparative Examples 9-10.

以下、実施例を挙げて本発明を更に詳細に説明する。   Hereinafter, the present invention will be described in more detail with reference to examples.

実施例1〜3及び比較例1〜2
下記基本組成の電解銅めっき液に、表1に示す各添加剤を添加してPRパルス電解銅めっき液を調製した。
Examples 1-3 and Comparative Examples 1-2
Each additive shown in Table 1 was added to an electrolytic copper plating solution having the following basic composition to prepare a PR pulse electrolytic copper plating solution.

* 電解銅めっき液組成
硫酸銅 :70g/L
硫酸 :200g/L
塩素イオン :50mg/L
添加剤 :トップルチナSFベースWR※1 2.5ml/L
トップルチナSF−B※2 1.0ml/L
トップルチナSFレベラー※3 5.0ml/L

※1:商品名、高分子界面活性剤含有添加剤、奥野製薬工業(株)製
※2:商品名、含硫黄有機化合物含有添加剤、奥野製薬工業(株)製
※3:商品名、含窒素有機化合物含有添加剤、奥野製薬工業(株)製

直径0.3mm、深さ1.6mmの多数のスルーホールを有し、厚さ1μmの無電解銅めっき皮膜を全面に形成した基板を被めっき物として用い、これを脱脂液(商品名: DP-320クリーン 奥野製薬工業(株)製、100ml/L水溶液)に45℃で5分間浸漬した後、1分間水洗し、100g/Lの希硫酸に1分間浸漬して前処理を行った。次いで、各PRパルス電解銅めっき液を用いて、下記めっき条件にてPRパルス電解法によって電解銅めっきを行い、膜厚25μmの銅めっき皮膜を形成した。
* Electrolytic copper plating solution composition Copper sulfate: 70 g / L
Sulfuric acid: 200g / L
Chlorine ion: 50mg / L
Additive: Top Lucina SF Base WR * 1 2.5ml / L
Top Lucina SF-B * 2 1.0ml / L
Top Lucina SF Leveler * 3 5.0ml / L

* 1: Product name, polymer surfactant-containing additive, manufactured by Okuno Pharmaceutical Industry Co., Ltd. * 2: Product name, sulfur-containing organic compound-containing additive, manufactured by Okuno Pharmaceutical Industry Co., Ltd. * 3: Product name, including Nitrogen organic compound-containing additive, manufactured by Okuno Pharmaceutical Co., Ltd.

A substrate having a large number of through-holes with a diameter of 0.3 mm and a depth of 1.6 mm and having an electroless copper plating film with a thickness of 1 μm formed on the entire surface is used as an object to be plated, and this is used as a degreasing solution (trade name: DP -320 Clean Okino Pharmaceutical Co., Ltd. (100 ml / L aqueous solution) was immersed at 45 ° C. for 5 minutes, washed with water for 1 minute, and immersed in 100 g / L dilute sulfuric acid for 1 minute for pretreatment. Subsequently, using each PR pulse electrolytic copper plating solution, electrolytic copper plating was performed by the PR pulse electrolytic method under the following plating conditions to form a copper plating film having a film thickness of 25 μm.

* めっき条件
正電流密度 :3A/dm2
逆電流密度 :20A/dm2
正電解時間 :10msec
逆電解時間 :0.3msec
浴温 :23℃
撹拌 :空気撹拌

上記した方法でPRパルス電流を通電して電解銅めっきを行った後、下記の方法でめっき外観及び均一電着性を評価した。また、ステンレス板上に形成した電解銅めっき皮膜について、下記の方法で皮膜物性を評価した。結果を下記表1に示す。
* Plating conditions Positive current density: 3A / dm 2
Reverse current density: 20A / dm 2
Positive electrolysis time: 10msec
Reverse electrolysis time: 0.3msec
Bath temperature: 23 ° C
Stirring: Air stirring

After conducting the electrolytic copper plating by applying a PR pulse current by the above method, the plating appearance and the throwing power were evaluated by the following methods. Moreover, about the electrolytic copper plating film | membrane formed on the stainless steel plate, the film | membrane physical property was evaluated with the following method. The results are shown in Table 1 below.

(1)めっき外観:
形成されためっき皮膜の外観を目視で評価した。めっき皮膜が良好な光沢を有する場合を○印で表し、半光沢〜光沢を有する場合を△印で表し、無光沢の場合を×印で表す。
(1) Plating appearance:
The appearance of the formed plating film was visually evaluated. The case where the plating film has good gloss is represented by a circle, the case where it has a semi-gloss to gloss is represented by a triangle, and the case where it is not glossy is represented by a cross.

(2)均一電着性
電解めっき終了後、被めっき物のスルーホール部分について、図1に示す箇所のめっき厚を測定した。図1はスルーホールの断面であり、図中の(1)、(2)、(3)及び(4)は表面めっき厚であり、(5)及び(6)は、スルーホール内面のめっき厚である。
(2) Uniform electrodeposition After the completion of electrolytic plating, the plating thickness at the location shown in FIG. 1 was measured for the through-hole portion of the object to be plated. FIG. 1 is a cross-sectional view of a through hole. In FIG. 1, (1), (2), (3) and (4) are surface plating thicknesses, and (5) and (6) are plating thicknesses on the inner surface of the through hole. It is.

得られた膜厚の測定値に基づいて、下記式により均一電着性を算出した。均一電着性が80%以上の場合を○印で表し、80%を下回る場合を×印で表す。   Based on the measured value of the obtained film thickness, the throwing power was calculated by the following formula. A case where the throwing power is 80% or more is represented by a circle, and a case where the throwing power is less than 80% is represented by a cross.

Figure 2010189733
Figure 2010189733

(3)皮膜物性
ステンレス板を被めっき物として、上記した条件と同様にして、PRパルス電流を通電して電解銅めっきを行い、膜厚50μmの銅めっき皮膜を形成した。次いで、形成された銅めっき皮膜をステンレス板から剥離した後、オートグラフを用いて伸び率、抗張力を測定した。伸び率が20%以上であって、且つ、抗張力が300N/mm以上の場合を○印で表し、いずれか一方でも上記範囲を下回った場合を×印で表す。
(3) Physical Properties of Film Using a stainless steel plate as an object to be plated, electrolytic copper plating was conducted by applying a PR pulse current in the same manner as described above to form a copper plating film having a thickness of 50 μm. Next, after peeling the formed copper plating film from the stainless steel plate, elongation and tensile strength were measured using an autograph. A case where the elongation is 20% or more and a tensile strength is 300 N / mm 2 or more is represented by a circle, and a case where either one is below the above range is represented by a cross.

Figure 2010189733
Figure 2010189733

以上の結果から明らかなように、アルケン類またはアルキン類を添加剤として含む実施例1〜3の電解銅めっき液を用いてPRパルス電解を行うことよって、均一電着性に優れ、良好な外観及び皮膜物性を有する銅めっき皮膜を形成できた。   As is apparent from the above results, by performing PR pulse electrolysis using the electrolytic copper plating solutions of Examples 1 to 3 containing an alkene or alkyne as an additive, the electrodeposition is excellent in uniform electrodeposition and good appearance. And a copper plating film having film properties could be formed.

これに対して、アルケン類及びアルキン類をいずれも含まない比較例1のめっき液を用いた場合と飽和脂肪族カルボン酸であるコハク酸を含む比較例2のめっき液を用いた場合には、形成されためっき皮膜は、外観及び皮膜物性が劣るものとなった。   On the other hand, when the plating solution of Comparative Example 1 containing neither alkenes nor alkynes is used and when the plating solution of Comparative Example 2 containing succinic acid, which is a saturated aliphatic carboxylic acid, is used, The formed plating film was inferior in appearance and film properties.

実施例4〜6及び比較例3〜4
下記基本組成の電解銅めっき液に、表2に示す各添加剤を添加してPRパルス電解銅めっき液を調製した。
Examples 4-6 and Comparative Examples 3-4
Each additive shown in Table 2 was added to an electrolytic copper plating solution having the following basic composition to prepare a PR pulse electrolytic copper plating solution.

*電解銅めっき液組成
硫酸銅 :70g/L
硫酸 :200g/L
塩素イオン :50mg/L
添加剤 :トップルチナSFベースWR※1 2.5ml/L
トップルチナSF−B※2 1.0ml/L
トップルチナSFレベラー※3 5.0ml/L

※1:商品名、高分子界面活性剤含有添加剤、奥野製薬工業(株)製
※2:商品名、含硫黄有機化合物含有添加剤、奥野製薬工業(株)製
※3:商品名、含窒素有機化合物含有添加剤、奥野製薬工業(株)製

実施例1〜3と同じ被めっき物を用い、実施例1〜3と同様の方法で前処理を行った後、各PRパルス電解銅めっき液を用いて、下記めっき条件にてPRパルス電解法によって電解銅めっきを行い、膜厚25μmの銅めっき皮膜を形成した。
* Electrolytic copper plating solution composition Copper sulfate: 70 g / L
Sulfuric acid: 200g / L
Chlorine ion: 50mg / L
Additive: Top Lucina SF Base WR * 1 2.5ml / L
Top Lucina SF-B * 2 1.0ml / L
Top Lucina SF Leveler * 3 5.0ml / L

* 1: Product name, polymer surfactant-containing additive, manufactured by Okuno Pharmaceutical Co., Ltd. * 2: Product name, sulfur-containing organic compound-containing additive, manufactured by Okuno Pharmaceutical Industry Co., Ltd. * 3: Product name, including Nitrogen organic compound-containing additive, manufactured by Okuno Pharmaceutical Co., Ltd.

After performing the pretreatment by the same method as in Examples 1 to 3 using the same object to be plated in Examples 1 to 3, PR pulse electrolysis method was used under the following plating conditions using each PR pulse electrolytic copper plating solution. Then, electrolytic copper plating was performed to form a copper plating film with a film thickness of 25 μm.

*めっき条件
正電流密度 :3A/dm2
逆電流密度 :10A/dm2
正電解時間 :10msec
逆電解時間 :0.5msec
浴温 :23℃
撹拌 :空気撹拌
上記した方法でPRパルス電流を通電して電解銅めっきを行った後、実施例1〜3と同様にしてめっき外観、皮膜物性及び均一電着性を評価した。結果を下記表2に示す。
* Plating conditions Positive current density: 3A / dm 2
Reverse current density: 10A / dm 2
Positive electrolysis time: 10msec
Reverse electrolysis time: 0.5msec
Bath temperature: 23 ° C
Agitation: Air agitation After performing electrolytic copper plating by applying a PR pulse current by the method described above, the plating appearance, film physical properties and uniform electrodeposition were evaluated in the same manner as in Examples 1-3. The results are shown in Table 2 below.

Figure 2010189733
Figure 2010189733

以上の結果から明らかなように、アルケン類またはアルキン類を添加剤として含む実施例4〜6の電解銅めっき液を用いてPRパルス電解を行うことよって、均一電着性に優れ、良好な外観及び皮膜物性を有する銅めっき皮膜を形成できた。   As is clear from the above results, by performing PR pulse electrolysis using the electrolytic copper plating solutions of Examples 4 to 6 containing alkenes or alkynes as additives, the electrodeposition is excellent in uniform electrodeposition and good appearance. And a copper plating film having film properties could be formed.

これに対して、アルケン類及びアルキン類をいずれも含まない比較例3のめっき液を用いた場合と、飽和アルコールであるブタンジオールを含む比較例4のめっき液を用いた場合には、形成されためっき皮膜は、外観及び皮膜物性が劣るものとなった。   On the other hand, it is formed when the plating solution of Comparative Example 3 containing neither alkenes nor alkynes is used, and when the plating solution of Comparative Example 4 containing butanediol, which is a saturated alcohol, is used. The plated film was inferior in appearance and film properties.

実施例7〜9及び比較例5〜6
下記基本組成の電解銅めっき液に、表3に示す各添加剤を添加してPRパルス電解銅めっき液を調製した。
Examples 7-9 and Comparative Examples 5-6
Each additive shown in Table 3 was added to an electrolytic copper plating solution having the following basic composition to prepare a PR pulse electrolytic copper plating solution.

*電解銅めっき液組成
硫酸銅 :70g/L
硫酸 :200g/L
塩素イオン :50mg/L
添加剤 :トップルチナPR−A※4 10ml/L
トップルチナPR−B※5 1.0ml/L

※4:商品名、高分子界面活性剤含有添加剤、奥野製薬工業(株)製
※5:商品名、含硫黄有機化合物含有添加剤、奥野製薬工業(株)製

実施例1〜3と同じ被めっき物を用い、実施例1〜3と同様の方法で前処理を行った後、各PRパルス電解銅めっき液を用いて、下記めっき条件にてPRパルス電解法によって電解銅めっきを行い、膜厚25μmの銅めっき皮膜を形成した。
* Electrolytic copper plating solution composition Copper sulfate: 70 g / L
Sulfuric acid: 200g / L
Chlorine ion: 50mg / L
Additive: Top Lucina PR-A * 4 10ml / L
Top Lucina PR-B * 5 1.0ml / L

* 4: Product name, polymer surfactant-containing additive, manufactured by Okuno Pharmaceutical Industries, Ltd. * 5: Product name, sulfur-containing organic compound-containing additive, manufactured by Okuno Pharmaceutical Industries, Ltd.

After performing the pretreatment by the same method as in Examples 1 to 3 using the same object to be plated in Examples 1 to 3, PR pulse electrolysis method was used under the following plating conditions using each PR pulse electrolytic copper plating solution. Then, electrolytic copper plating was performed to form a copper plating film with a film thickness of 25 μm.

* めっき条件
正電流密度 :3A/dm2
逆電流密度 :7.5A/dm2
正電解時間 :10msec
逆電解時間 :0.3msec
浴温 :23℃
撹拌 :空気撹拌

上記した方法でPRパルス電流を通電して電解銅めっきを行った後、実施例1〜3と同様にしてめっき外観、皮膜物性及び均一電着性を評価した。結果を下記表3に示す。
* Plating conditions Positive current density: 3A / dm 2
Reverse current density: 7.5A / dm 2
Positive electrolysis time: 10msec
Reverse electrolysis time: 0.3msec
Bath temperature: 23 ° C
Stirring: Air stirring

After conducting the electrolytic copper plating by supplying a PR pulse current by the above-described method, the plating appearance, film physical properties and uniform electrodeposition were evaluated in the same manner as in Examples 1 to 3. The results are shown in Table 3 below.

Figure 2010189733
Figure 2010189733

以上の結果から明らかなように、アルケン類またはアルキン類を添加剤として含む実施例7〜9の電解銅めっき液を用いてPRパルス電解を行うことよって、均一電着性に優れ、良好な外観及び皮膜物性を有する銅めっき皮膜を形成できた。   As is apparent from the above results, by performing PR pulse electrolysis using the electrolytic copper plating solutions of Examples 7 to 9 containing alkenes or alkynes as additives, the electrodeposition is excellent in uniform electrodeposition and good appearance. And a copper plating film having film properties could be formed.

これに対して、アルケン類及びアルキン類をいずれも含まない比較例5のめっき液を用いた場合と、飽和アルコールであるブタンジオールを含む比較例6のめっき液を用いた場合には、形成されためっき皮膜は、外観が劣るものとなった。   On the other hand, it is formed when the plating solution of Comparative Example 5 containing neither alkenes nor alkynes is used, and when the plating solution of Comparative Example 6 containing butanediol, which is a saturated alcohol, is used. The plated film was inferior in appearance.

実施例10〜12及び比較例7〜8
下記基本組成の電解銅めっき液に、表4に示す各添加剤を添加してPRパルス電解銅めっき液を調製した。
Examples 10-12 and Comparative Examples 7-8
Each additive shown in Table 4 was added to an electrolytic copper plating solution having the following basic composition to prepare a PR pulse electrolytic copper plating solution.

*電解銅めっき液組成
硫酸銅 :200g/L
硫酸 :50g/L
塩素イオン :50mg/L
添加剤 :トップルチナα−M※6 4.5ml/L
トップルチナα−2※7 1.0ml/L
トップルチナα−3※8 3.0ml/L

※6:商品名、高分子界面活性剤含有添加剤、奥野製薬工業(株)製
※7:商品名、含硫黄有機化合物含有添加剤、奥野製薬工業(株)製
※8:商品名、含窒素有機化合物含有添加剤、奥野製薬工業(株)製

直径100μm、深さ60μmの多数のビアを有し、厚さ1μmの無電解銅めっき皮膜を全面に形成した基板を被めっき物として用い、これを脱脂液(商品名: DP-320クリーン 奥野製薬工業(株)製、100ml/L水溶液)に45℃で5分間浸漬した後、1分間水洗し、100g/Lの希硫酸に1分間浸漬して前処理を行った。次いで、各PRパルス電解銅めっき液を用いて、下記めっき条件にてPRパルス電解法によって電解銅めっきを行い、膜厚25μmの銅めっき皮膜を形成した。
* Electrolytic copper plating solution composition
Copper sulfate: 200 g / L
Sulfuric acid: 50 g / L
Chlorine ion: 50mg / L
Additive: Top Lucina α-M * 6 4.5ml / L
Top Lucina α-2 * 7 1.0ml / L
Top Lucina α-3 * 8 3.0ml / L

* 6: Product name, polymer surfactant-containing additive, manufactured by Okuno Pharmaceutical Co., Ltd. * 7: Product name, sulfur-containing organic compound-containing additive, manufactured by Okuno Pharmaceutical Industry Co., Ltd. * 8: Product name, including Nitrogen organic compound-containing additive, manufactured by Okuno Pharmaceutical Co., Ltd.

A substrate that has a large number of vias with a diameter of 100 μm and a depth of 60 μm and an electroless copper plating film with a thickness of 1 μm formed on the entire surface is used as the object to be plated. A 100 ml / L aqueous solution manufactured by Kogyo Co., Ltd.) was immersed at 45 ° C. for 5 minutes, washed with water for 1 minute, and then immersed in 100 g / L dilute sulfuric acid for 1 minute for pretreatment. Subsequently, using each PR pulse electrolytic copper plating solution, electrolytic copper plating was performed by the PR pulse electrolytic method under the following plating conditions to form a copper plating film having a film thickness of 25 μm.

* めっき条件
正電流密度 :1A/dm2
逆電流密度 :10A/dm2
正電解時間 :10msec
逆電解時間 :0.2msec
浴温 :23℃
撹拌 :空気撹拌
上記した方法でPRパルス電流を通電して電解銅めっきを行った後、実施例1〜3と同様にしてめっき外観、及び皮膜物性を評価し、更に、下記の方法でビアフィリング性を評価した。結果を下記表4に示す。
* Plating conditions Positive current density: 1A / dm 2
Reverse current density: 10A / dm 2
Positive electrolysis time: 10msec
Reverse electrolysis time: 0.2msec
Bath temperature: 23 ° C
Stirring: Air stirring After conducting electrolytic copper plating by applying a PR pulse current by the method described above, the plating appearance and film properties were evaluated in the same manner as in Examples 1 to 3, and via filling was further performed by the following method. Sex was evaluated. The results are shown in Table 4 below.

(1)ビアフィリング性
電解めっき終了後、被めっき物のビア部分の断面観察を行い、ビア部分の埋込性を評価した。評価方法としては、図2に示すように、ビア底面からめっき表面までの厚さを総厚とし、ビア部分のめっき厚さを埋込量として、下記式によってビアフィリング率を求めた。
ビアフィリング率が80%以上の場合を○印で表し、80%を下回る場合を×印で表す。
(1) Via filling property After the completion of electrolytic plating, a cross-sectional observation of the via portion of the object to be plated was performed, and the embedding property of the via portion was evaluated. As an evaluation method, as shown in FIG. 2, the via filling rate was obtained by the following formula, with the thickness from the via bottom to the plating surface being the total thickness, and the plating thickness of the via portion being the filling amount.
A case where the via filling rate is 80% or more is represented by a circle, and a case where the via filling rate is less than 80% is represented by a cross.

ビアフィリング率(%)=(埋込量/総厚)×100     Via filling rate (%) = (embedding amount / total thickness) × 100

Figure 2010189733
Figure 2010189733

以上の結果から明らかなように、アルケン類またはアルキン類を添加剤として含む実施例10〜12の電解銅めっき液を用いてPRパルス電解を行うことよって、良好な外観及び皮膜物性を有し、ビアフィリング性にも優れた銅めっき皮膜を形成できた。   As is clear from the above results, by performing PR pulse electrolysis using the electrolytic copper plating solution of Examples 10-12 containing an alkene or alkyne as an additive, it has a good appearance and film properties, A copper plating film with excellent via filling properties could be formed.

これに対して、アルケン類及びアルキン類をいずれも含まない比較例7のめっき液を用いた場合と、飽和脂肪族カルボン酸であるコハク酸を含む比較例8のめっき液を用いた場合には、形成されためっき皮膜は、外観、皮膜物性及びビアフィリング性がいずれも劣るものとなった。   In contrast, when the plating solution of Comparative Example 7 containing neither alkenes nor alkynes is used, and when the plating solution of Comparative Example 8 containing succinic acid, which is a saturated aliphatic carboxylic acid, is used. The formed plating film was inferior in appearance, film properties and via filling properties.

実施例13〜15及び比較例9〜10
下記基本組成の電解銅めっき液に、表5に示す各添加剤を添加してPRパルス電解銅めっき液を調製した。
Examples 13-15 and Comparative Examples 9-10
Each additive shown in Table 5 was added to an electrolytic copper plating solution having the following basic composition to prepare a PR pulse electrolytic copper plating solution.

*電解銅めっき液組成
硫酸銅 :200g/L
硫酸 :50g/L
塩素イオン :50mg/L
添加剤 :トップルチナα−M※6 4.5ml/L
トップルチナα−2※7 1.0ml/L
トップルチナα−3※8 3.0ml/L

※6:商品名、高分子界面活性剤含有添加剤、奥野製薬工業(株)製
※7:商品名、含硫黄有機化合物含有添加剤、奥野製薬工業(株)製
※8:商品名、含窒素有機化合物含有添加剤、奥野製薬工業(株)製

直径0.1mm、深さ0.2mm多数のスルーホールを有し、厚さ1μmの無電解銅めっき皮膜を全面に形成した基板を被めっき物として用い、これを脱脂液(商品名: DP-320クリーン 奥野製薬工業(株)製、100ml/L水溶液)に45℃で5分間浸漬した後、1分間水洗し、100g/Lの希硫酸に1分間浸漬して前処理を行った。次いで、各PRパルス電解銅めっき液を用いて、下記めっき条件にてPRパルス電解法によって電解銅めっきを行い、膜厚30μmの銅めっき皮膜を形成した。
* Electrolytic copper plating solution composition Copper sulfate: 200 g / L
Sulfuric acid: 50 g / L
Chlorine ion: 50mg / L
Additive: Top Lucina α-M * 6 4.5ml / L
Top Lucina α-2 * 7 1.0ml / L
Top Lucina α-3 * 8 3.0ml / L

* 6: Product name, polymer surfactant-containing additive, manufactured by Okuno Pharmaceutical Co., Ltd. * 7: Product name, sulfur-containing organic compound-containing additive, manufactured by Okuno Pharmaceutical Industry Co., Ltd. * 8: Product name, including Nitrogen organic compound-containing additive, manufactured by Okuno Pharmaceutical Co., Ltd.

A substrate with a number of through-holes with a diameter of 0.1 mm and a depth of 0.2 mm and an electroless copper plating film with a thickness of 1 μm formed on the entire surface is used as the object to be plated, and this is used as a degreasing solution (trade name: DP- 320 Clean (Okuno Pharmaceutical Co., Ltd., 100 ml / L aqueous solution) was immersed at 45 ° C. for 5 minutes, washed with water for 1 minute, and immersed in 100 g / L dilute sulfuric acid for 1 minute for pretreatment. Subsequently, using each PR pulse electrolytic copper plating solution, electrolytic copper plating was performed by the PR pulse electrolytic method under the following plating conditions to form a copper plating film having a film thickness of 30 μm.

*めっき条件
正電流密度 :1.5A/dm2
逆電流密度 :20A/dm2
正電解時間 :10msec
逆電解時間 :0.2msec
浴温 :23℃
撹拌 :空気撹拌
上記した方法でPRパルス電流を通電して電解銅めっきを行った後、実施1〜3と同様にしてめっき外観、及び皮膜物性を評価し、更に、下記の方法でスルーホールフィリング性を評価した。結果を下記表5に示す。
* Plating conditions Positive current density: 1.5A / dm 2
Reverse current density: 20A / dm 2
Positive electrolysis time: 10msec
Reverse electrolysis time: 0.2msec
Bath temperature: 23 ° C
Stirring: Air stirring After conducting the electrolytic copper plating by applying the PR pulse current by the method described above, the plating appearance and film properties were evaluated in the same manner as in Examples 1-3, and further, through-hole filling was performed by the following method. Sex was evaluated. The results are shown in Table 5 below.

(1)スルーホールフィリング性
電解めっき終了後、被めっき物のスルーホール部分の断面観察を行い、スルーホール部分の埋込性を評価した。評価方法としては、図3に示すように、めっき表面からめっき裏面までの厚さを総厚とし、スルーホール部分のめっき厚さを埋込量として、下記式によってスルーホールフィリング率を求めた。スルーホールフィリング率が80%以上の場合を○印で表し、80%を下回る場合を×印で表す。
(1) Through-hole filling property After electrolytic plating was completed, the cross-sectional observation of the through-hole portion of the object to be plated was performed to evaluate the embedding property of the through-hole portion. As an evaluation method, as shown in FIG. 3, the thickness from the plating surface to the plating back surface was defined as the total thickness, and the plating thickness at the through hole portion was used as the burying amount. A case where the through-hole filling rate is 80% or more is represented by a circle, and a case where the through-hole filling ratio is less than 80% is represented by a cross.

スルーホールフィリング率(%)=(埋込量/総厚)×100     Through-hole filling rate (%) = (embedding amount / total thickness) × 100

Figure 2010189733
Figure 2010189733

以上の結果から明らかなように、アルケン類またはアルキン類を添加剤として含む実施例13〜15の電解銅めっき液を用いてPRパルス電解を行うことよって、良好な外観及び皮膜物性を有し、スルーホールフィリング性にも優れた銅めっき皮膜を形成できた。   As is clear from the above results, by performing PR pulse electrolysis using the electrolytic copper plating solutions of Examples 13 to 15 containing an alkene or alkyne as an additive, it has a good appearance and film properties, A copper plating film with excellent through-hole filling properties could be formed.

これに対して、アルケン類及びアルキン類をいずれも含まない比較例9のめっき液を用いた場合と、飽和アルコールであるブタンジオールを含む比較例10のめっき液を用いた場合には、形成されためっき皮膜は、外観、皮膜物性及びスルーホールフィリング性がいずれも劣るものであった。   On the other hand, it is formed when the plating solution of Comparative Example 9 containing neither alkenes nor alkynes is used, and when the plating solution of Comparative Example 10 containing butanediol, which is a saturated alcohol, is used. The plated film was inferior in appearance, film properties and through-hole filling properties.

Claims (8)

アルケン類及びアルキン類からなる群から選ばれた少なくとも一種の成分からなる、PRパルス電解法に用いる銅めっき液用添加剤。 An additive for a copper plating solution used in a PR pulse electrolysis method, comprising at least one component selected from the group consisting of alkenes and alkynes. アルケン類が、下記一般式(I):
Figure 2010189733
(式中、R〜Rは、同一又は異なって、それぞれ、水素原子、低級アルキル基、水酸基、カルボキシル基、基:−SO(但し、Mは水素原子又はアルカリ金属である)、基:−CONH、又は基:−COOR(但し、Rは置換基として水酸基を有することのある低級アルキル基である)であり、該低級アルキル基は、水酸基、カルボキシル基、及び基:−SO(但し、Mは水素原子又はアルカリ金属である)からなる群から選ばれた少なくとも一種の置換基を有してもよい。)で表される化合物であり、
アルキン類が、下記一般式(II):
Figure 2010189733
(式中、RおよびRは、同一又は異なって、それぞれ、水素原子、低級アルキル基、水酸基、カルボキシル基、置換基を有することのあるアルコキシ基、基:−NR (但し、Rは、水素原子又はアルキル基である)、基:−SO(但し、Mは水素原子又はアルカリ金属である)、又は基:−(O(CH−OH(但し、nは2又は3、mは1〜5の整数である)であり、該低級アルキル基は、カルボキシル基、水酸基、置換基を有することのあるアルコキシ基、基:−NR (但し、Rは、水素原子又は低級アルキル基である)、基:−(O(CH−OH(但し、nは2又は3、mは1〜5の整数である)、及び基:−SO(但し、Mは水素原子又はアルカリ金属である)からなる群から選ばれた少なくとも一種の置換基を有してもよい。)で表される化合物である請求項1に記載のPRパルス電解法に用いる銅めっき液用添加剤。
Alkenes are represented by the following general formula (I):
Figure 2010189733
(Wherein R 1 to R 4 are the same or different and each represents a hydrogen atom, a lower alkyl group, a hydroxyl group, a carboxyl group, a group: —SO 3 M 1 (wherein M 1 is a hydrogen atom or an alkali metal) ), Group: —CONH 2 , or group: —COOR (wherein R is a lower alkyl group which may have a hydroxyl group as a substituent), and the lower alkyl group includes a hydroxyl group, a carboxyl group, and a group: -SO 3 M 1 (wherein M 1 may have at least one substituent selected from the group consisting of a hydrogen atom or an alkali metal).
Alkynes are represented by the following general formula (II):
Figure 2010189733
(Wherein R 5 and R 6 are the same or different and each represents a hydrogen atom, a lower alkyl group, a hydroxyl group, a carboxyl group, an alkoxy group which may have a substituent, or a group: —NR 7 2 (provided that R 7 is a hydrogen atom or an alkyl group), a group: —SO 3 M 1 (where M 1 is a hydrogen atom or an alkali metal), or a group: — (O (CH 2 ) n ) m —OH ( However, n is 2 or 3, m is an integer of 1-5, and this lower alkyl group is a carboxyl group, a hydroxyl group, an alkoxy group which may have a substituent, a group: —NR 7 2 (provided that , R 7 is a hydrogen atom or a lower alkyl group), a group: — (O (CH 2 ) n ) m —OH (where n is 2 or 3, m is an integer of 1 to 5), and group: -SO 3 M 1 (where, M 1 is a hydrogen atom or an alkali metal Additive for copper plating solution used in the PR pulse electrolysis method according to claim 1 which is a compound represented by selected from the group consisting of certain) at least one may have a substituent.).
アルケン類及びアルキン類が、ぞれぞれ、水酸基、カルボキシル基、基:−SO(但し、Mは水素原子又はアルカリ金属である)、基:−CONH、及びアミノ基からなる群から選ばれた少なくとも一種の親水性基を有するものである、請求項1又は2に記載のPRパルス電解法に用いる銅めっき液用添加剤。 Alkenes and alkynes each comprise a hydroxyl group, a carboxyl group, a group: —SO 3 M 1 (where M 1 is a hydrogen atom or an alkali metal), a group: —CONH 2 , and an amino group. The additive for copper plating solutions used for PR pulse electrolysis method of Claim 1 or 2 which has at least 1 type of hydrophilic group chosen from the group. 銅イオン、並びに有機酸及び無機酸から選ばれた少なくとも一種の酸成分を含有する水溶液を基本めっき浴として、
更に、請求項1〜3のいずれかに記載の添加剤を含有することを特徴とする、PRパルス電解法によるめっき用銅めっき液。
An aqueous solution containing at least one acid component selected from copper ions and organic acids and inorganic acids as a basic plating bath,
Furthermore, the copper plating solution for plating by PR pulse electrolysis characterized by containing the additive in any one of Claims 1-3.
基本めっき浴が、(i)銅イオン、(ii)有機酸及び無機酸から選ばれた少なくとも一種の酸成分、(iii)塩化物イオン、(iv)非イオン性ポリエーテル系高分子界面活性剤、並びに(v)含硫黄有機化合物を含有する水溶液である請求項4に記載のPRパルス電解法によるめっき用銅めっき液。 The basic plating bath is (i) at least one acid component selected from copper ions, (ii) organic acids and inorganic acids, (iii) chloride ions, and (iv) nonionic polyether polymer surfactants. And (v) a copper plating solution for plating by the PR pulse electrolysis method according to claim 4, which is an aqueous solution containing a sulfur-containing organic compound. 基本めっき浴が、(i)銅イオン、(ii)有機酸及び無機酸から選ばれた少なくとも一種の酸成分、(iii)塩化物イオン、(iv)非イオン性ポリエーテル系高分子界面活性剤、(v)含硫黄有機化合物、並びに(vi)含窒素化合物を含有する水溶液である請求項4に記載のPRパルス電解法によるめっき用銅めっき液。 The basic plating bath is (i) at least one acid component selected from copper ions, (ii) organic acids and inorganic acids, (iii) chloride ions, and (iv) nonionic polyether polymer surfactants. The copper plating solution for plating by the PR pulse electrolysis method according to claim 4, wherein the aqueous solution contains (v) a sulfur-containing organic compound and (vi) a nitrogen-containing compound. 請求項1〜3のいずれかに記載の添加剤を1mg/L〜100g/L含有する請求項4〜6のいずれかに記載のPRパルス電解法によるめっき用銅めっき液。 The copper plating solution for plating by the PR pulse electrolysis method according to any one of claims 4 to 6, comprising 1 mg / L to 100 g / L of the additive according to any one of claims 1 to 3. 請求項4〜7のいずれかに記載の銅めっき液中で、被めっき物をカソードとして、PRパルス電流を通電して電解銅めっきを行うことを特徴とするPRパルス電解法による銅めっき方法。 A copper plating method by a PR pulse electrolysis method, characterized in that in the copper plating solution according to any one of claims 4 to 7, an electrolytic copper plating is performed by applying a PR pulse current with the object to be plated as a cathode.
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